Indication device

Abstract

To provide a high-definition display device. [Solution] The display device comprises a first light-emitting device, a second light-emitting device located next to the first light-emitting device, a third light-emitting device located next to the second light-emitting device, a first insulating layer, and a second insulating layer, wherein the first insulating layer has a first region between the first light-emitting device and the second light-emitting device, and a second region between the second light-emitting device and the third light-emitting device, the second insulating layer has a region located on the lower electrode of the third light-emitting device, the thickness of the third organic compound layer of the third light-emitting device is different from the thickness of the first organic compound layer of the first light-emitting device, and the thickness of the third organic compound layer of the third light-emitting device is different from the thickness of the second organic compound layer of the second light-emitting device, and in cross-sectional view, the first insulating layer is provided such that its height from the lower surface of the lower electrode of the third light-emitting device is the same as its height from the lower surface of the lower electrode of the second light-emitting device.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device.

[0002] The present invention is not limited to the above-mentioned technical fields. Examples of the technical fields of the present invention include semiconductor devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), or input / output devices (e.g., touch panels, etc.). Furthermore, the present invention can also be described as a method for driving the above-mentioned devices or a method for manufacturing the above-mentioned devices. [Background technology]

[0003] In recent years, devices for virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR) have been actively developed. The display devices incorporated into these devices require high resolution.

[0004] Applications of large display devices include home television systems (also called televisions or television receivers), digital signage, and PIDs (Public Information Displays).

[0005] Applications for small display devices include portable information terminals, such as smartphones with touch panels and tablet devices with touch panels.

[0006] As a light-emitting element for the aforementioned display device, one utilizing the electroluminescence (EL) phenomenon has been developed. Light-emitting elements that utilize the EL phenomenon are suitable for making display devices thinner and lighter.

[0007] Regarding the structure of a light-emitting element, Patent Document 1 discloses a microcavity structure.

[0008] Further, regarding a method for manufacturing a light-emitting element, Non-Patent Document 1 discloses a manufacturing method using standard UV photolithography.

Prior Art Documents

Patent Documents

[0009]

Patent Document 1

Non-Patent Documents

[0010]

Non-Patent Document 1

Summary of the Invention

Problem to be Solved by the Invention

[0011] In the above-mentioned Patent Document 1, it is also described that a fine metal mask is used to form a light-emitting layer and the like included in a light-emitting element. However, when a fine metal mask is used, the shape and position of the light-emitting layer may deviate from the design, and the design needs to accommodate such deviation, which makes it difficult to achieve higher definition of a display device.

[0012] Factors that can cause misalignment include low dimensional accuracy of the fine metal mask, misalignment of the fine metal mask, deflection of the fine metal mask, and widening of the contour of the light-emitting layer being deposited. Furthermore, deformation of the fine metal mask due to heat during deposition can reduce the manufacturing yield of the display device. In addition, widening of the contour of the light-emitting layer can cause the thickness of the edges of the light-emitting layer to become thinner, resulting in variations in the film thickness of the light-emitting layer and reducing the reliability of the display device.

[0013] The method described in Non-Patent Document 1 above makes it difficult to increase the resolution of the display device, and there are concerns about a decrease in the reliability and yield of the display device.

[0014] In view of the above, one aspect of the present invention aims to provide a high-resolution display device. Another aspect of the present invention aims to provide a highly reliable display device.

[0015] Furthermore, the description of these problems does not preclude the existence of other problems. These problems are considered independent of each other, and one aspect of the present invention does not need to solve all of them. Moreover, it is possible to extract other problems from the description, drawings, and claims of this specification, etc. [Means for solving the problem]

[0016] One aspect of the present invention is a display device comprising: a first light-emitting device; a second light-emitting device; a third light-emitting device; a first insulating layer having a first region between the first and second light-emitting devices and a second region between the second and third light-emitting devices; and a second insulating layer located on the lower electrode of the third light-emitting device, wherein the thickness of the third organic compound layer of the third light-emitting device is different from the thickness of the first organic compound layer of the first light-emitting device, and the thickness of the third organic compound layer of the third light-emitting device is different from the thickness of the second organic compound layer of the second light-emitting device, and in cross-sectional view, the first insulating layer is located in a region where the height from the lower surface of the lower electrode of the third light-emitting device is the same as the height from the lower surface of the lower electrode of the second light-emitting device. In other words, in cross-sectional view, the height of the surface on which the first insulating layer is formed is approximately the same.

[0017] One aspect of the present invention is a display device comprising: a first light-emitting device; a second light-emitting device; a third light-emitting device; a first insulating layer having a first region between the first and second light-emitting devices and a second region between the second and third light-emitting devices; and a second insulating layer having a region overlapping with the lower electrode of the third light-emitting device, wherein the thickness of the third organic compound layer of the third light-emitting device is smaller than the thickness of the first organic compound layer of the first light-emitting device, and the thickness of the third organic compound layer of the third light-emitting device is smaller than the thickness of the second organic compound layer of the second light-emitting device, and in cross-sectional view, the first insulating layer is located in a region where the height from the lower surface of the lower electrode of the third light-emitting device is the same as the height from the lower surface of the lower electrode of the second light-emitting device. In other words, in cross-sectional view, the height of the surface on which the first insulating layer is formed is approximately the same.

[0018] In any aspect of the present invention, it is preferable to have a first sacrificial layer selectively provided on a first organic compound layer, a second sacrificial layer selectively provided on a second organic compound layer, and a third sacrificial layer selectively provided on a third organic compound layer.

[0019] One aspect of the present invention provides a first conductive layer and a second conductive layer provided on a first layer, a first organic compound layer having a region overlapping with the first conductive layer, a first insulating layer having a region overlapping with the second conductive layer, a second organic compound layer having a region overlapping with the second conductive layer and the first insulating layer, a first sacrificial layer having a region overlapping with the first organic compound layer, a second sacrificial layer having a region overlapping with the second organic compound layer, and the first sacrificial layer and the second sacrificial layer The display device comprises a second insulating layer having a region overlapping with the insulating layer, and a third conductive layer having a region overlapping with the second insulating layer, wherein the distance between the second conductive layer and the third conductive layer is different from the distance between the first conductive layer and the third conductive layer, and between the first conductive layer and the second conductive layer, the first layer has a first recess and a second recess deeper than the first recess, the first insulating layer overlaps with the second recess, and the second insulating layer overlaps with both the first and second recesses.

[0020] One aspect of the present invention provides a first conductive layer and a second conductive layer provided on a first layer, a first organic compound layer having a region overlapping with the first conductive layer, a first insulating layer having a region overlapping with the second conductive layer, a second organic compound layer having a region overlapping with the second conductive layer and the first insulating layer, a first sacrificial layer having a region overlapping with the first organic compound layer, a second sacrificial layer having a region overlapping with the second organic compound layer, and the first sacrificial layer and the second sacrificial layer The display device comprises a second insulating layer having a region overlapping with the first conductive layer, and a third conductive layer having a region overlapping with the second insulating layer, wherein the distance between the second conductive layer and the third conductive layer is smaller than the distance between the first conductive layer and the third conductive layer, and between the first conductive layer and the second conductive layer, the first layer has a first recess and a second recess deeper than the first recess, the first insulating layer overlaps with the second recess, and the second insulating layer overlaps with both the first and second recesses.

[0021] In any aspect of the present invention, it is preferable to have a protective layer on the third conductive layer. [Effects of the Invention]

[0022] According to one aspect of the present invention, a high-resolution display device can be provided. According to one aspect of the present invention, a highly reliable display device can be provided.

[0023] Furthermore, the description of these effects does not preclude the existence of other effects. These effects are considered independent of each other, and one aspect of the present invention does not need to exhibit all of these effects. Moreover, it is possible to extract other effects from the description, drawings, and claims of this specification, etc. [Brief explanation of the drawing]

[0024] [Figure 1] Figures 1A and 1B are cross-sectional views of a display device according to one embodiment of the present invention. [Figure 2] Figure 2 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 3] Figure 3 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 4] Figure 4 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 5] Figures 5A and 5B are cross-sectional views of a display device according to one embodiment of the present invention. [Figure 6] Figure 6A is a plan view of a display device according to one embodiment of the present invention, and Figure 6B is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 7] Figures 7A to 7C are cross-sectional views of the connection portion of a display device according to one embodiment of the present invention. [Figure 8] Figures 8A to 8C show a method for manufacturing a display device according to one embodiment of the present invention. [Figure 9] Figures 9A to 9C show a method for manufacturing a display device according to one embodiment of the present invention. [Figure 10] Figures 10A to 10C show a method for manufacturing a display device according to one embodiment of the present invention. [Figure 11] Figures 11A to 11C show a method for manufacturing a display device according to one embodiment of the present invention. [Figure 12] Figures 12A and 12B show a method for manufacturing a display device according to one embodiment of the present invention. [Figure 13] Figures 13A to 13C show a method for manufacturing a display device according to one embodiment of the present invention. [Figure 14] Figures 14A and 14B show a method for manufacturing a display device according to one embodiment of the present invention. [Figure 15] Figures 15A and 15B show a method for manufacturing a display device according to one embodiment of the present invention. [Figure 16] Figures 16A and 16B show a method for manufacturing a display device according to one embodiment of the present invention. [Figure 17] Figure 17 shows a method for manufacturing a display device according to one embodiment of the present invention. [Figure 18] Figures 18A to 18E are plan views of a display device according to one embodiment of the present invention. [Figure 19] Figures 19A to 19H are plan views of a display device according to one embodiment of the present invention. [Figure 20] Figures 20A to 20D are plan views of a display device according to one embodiment of the present invention, and Figures 20E to 20G are cross-sectional views of a display device according to one embodiment of the present invention. [Figure 21] Figure 21 is a perspective view of a display device according to one embodiment of the present invention. [Figure 22] Figure 22A is a cross-sectional view of a display device according to one embodiment of the present invention, and Figures 22B and 22C are cross-sectional views of a transistor according to one embodiment of the present invention. [Figure 23] Figure 23 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 24] Figure 24 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 25] Figure 25 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 26] Figures 26A and 26B are perspective views of a display device according to one embodiment of the present invention. [Figure 27] Figures 27A to 27D are circuit diagrams of a display device according to one embodiment of the present invention. [Figure 28] Figures 28A to 28D are cross-sectional views of a transistor according to one embodiment of the present invention. [Figure 29] Figures 29A and 29B are perspective views of an electronic device according to one embodiment of the present invention. [Figure 30] Figures 30A and 30B are perspective views of an electronic device according to one embodiment of the present invention. [Figure 31] Figure 31A is a perspective view of an electronic device according to one embodiment of the present invention, and Figure 31B is a cross-sectional view of an electronic device according to one embodiment of the present invention. [Figure 32] Figures 32A to 32D show an electronic device according to one embodiment of the present invention. [Figure 33] Figures 33A to 33G show an electronic device according to one embodiment of the present invention. [Modes for carrying out the invention]

[0025] In this specification and other documents, configurations are sometimes classified by function and explained using independent block diagrams. However, in reality, it is difficult to separate configurations by function, and one configuration may be involved in multiple functions.

[0026] In this specification, the terms "source" and "drain" of a transistor are interchangeable depending on the transistor's polarity and the potential applied to each terminal. Generally, in an n-channel transistor, the terminal to which a low potential is applied is called the source, and the terminal to which a high potential is applied is called the drain. In a p-channel transistor, the terminal to which a low potential is applied is called the drain, and the terminal to which a high potential is applied is called the source. In practice, the terms "source" and "drain" may be interchangeable according to the above potential relationship, but in this specification, when explaining the connection relationship of a transistor, the terms "source" and "drain" are fixed for convenience.

[0027] In this specification, the source of a transistor refers to the source region, which is part of the semiconductor layer that functions as the active layer, or the source electrode connected to the semiconductor layer. Similarly, the drain of a transistor refers to the drain region, which is part of the semiconductor film, or the drain electrode connected to the semiconductor film. The gate of a transistor refers to the gate electrode.

[0028] In this specification, the state in which transistors are connected in series means, for example, a state in which only one of the sources or drains of the first transistor is connected to only one of the sources or drains of the second transistor. The state in which transistors are connected in parallel means a state in which one of the sources or drains of the first transistor is connected to one of the sources or drains of the second transistor, and the other of the sources or drains of the first transistor is connected to the other of the sources or drains of the second transistor.

[0029] In this specification, "connection" may refer to an electrical connection, and includes a state in which current, voltage, or potential can be supplied or transmitted. Therefore, it also includes states in which devices are connected to each other via elements such as wiring, resistors, diodes, and transistors. Furthermore, electrical connection also includes states in which devices are directly connected to each other without the use of elements such as wiring, resistors, diodes, and transistors.

[0030] In this specification and other documents, the source and drain of a transistor may be described using the terms "first electrode" and "second electrode." If one of the first electrode and the second electrode is the source, the other electrode refers to the drain.

[0031] In this specification, the conductive layer may have multiple functions, such as wiring or electrodes.

[0032] In this specification, a light-emitting element may be referred to as a light-emitting device. The light-emitting device has a structure in which an organic compound layer is sandwiched between a pair of electrodes. The pair of electrodes are an anode and a cathode, and at least one of the organic compound layers is a light-emitting layer.

[0033] In this specification and other documents, a light-emitting device having an organic compound layer formed using a metal mask (MM) may be referred to as a light-emitting device having a metal mask (MM) structure.

[0034] In this specification and elsewhere, metal masks may be referred to as fine metal masks (FMMs, high-resolution metal masks) as the size of the apertures decreases.

[0035] In this specification and other documents, a light-emitting device having an organic compound layer formed without using a metal mask or a fine metal mask may be referred to as a light-emitting device having a metal maskless (MML) structure.

[0036] In this specification and other documents, light-emitting devices that emit red, green, and blue light may be referred to as red light-emitting devices, green light-emitting devices, and blue light-emitting devices, respectively.

[0037] In this specification, a structure in which the light-emitting layers are fabricated separately for each light-emitting device may be referred to as an SBS (Side By Side) structure. For example, by using an SBS structure to fabricate a red light-emitting device, a green light-emitting device, and a blue light-emitting device, a full-color display device can be provided.

[0038] In this specification, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. A white light-emitting device, when combined with a colored layer (e.g., a color filter), can provide a full-color display device.

[0039] Furthermore, light-emitting devices can be broadly classified into single structures and tandem structures. A single structure has one light-emitting unit between a pair of electrodes. This light-emitting unit refers to a laminate of organic compound layers containing one or more light-emitting layers.

[0040] To obtain a white light-emitting device using a single structure, the light-emitting unit may have two light-emitting layers, and the light emitted from these layers may satisfy the complementary color relationship. The two or more light-emitting layers may be in contact with each other within the light-emitting unit. Furthermore, a white light-emitting device can also be obtained with a light-emitting unit having three light-emitting layers. In the case of having three light-emitting layers, adjacent upper and lower light-emitting layers may be in contact within the light-emitting unit.

[0041] A tandem structure is a structure having two or more light-emitting units between a pair of electrodes. Preferably, each of the two or more light-emitting units has one or more light-emitting layers. In a tandem structure, it is preferable to provide intermediate layers, such as charge generation layers, between the multiple light-emitting units. That is, it is preferable that the tandem structure has a first light-emitting unit, a charge generation layer, and a second light-emitting unit between a pair of electrodes.

[0042] To obtain a white light-emitting device using a tandem structure, the light from the light-emitting layers of two or more light-emitting units should be combined to produce white light emission. The combination of light-emitting layers that produces white light should satisfy the complementary color relationship, similar to the single-layer structure.

[0043] Furthermore, when comparing the above-mentioned white light-emitting devices (single and tandem structures) with light-emitting devices with an SBS structure, the SBS structure can consume less power than the white light-emitting devices (single and tandem structures). In other words, if you want to keep power consumption low, it is preferable to use a light-emitting device with an SBS structure. On the other hand, since the manufacturing process for white light-emitting devices (single and tandem structures) is simpler than that of SBS structures, manufacturing costs can be lowered or manufacturing yields can be higher. In other words, if you want to lower manufacturing costs or increase manufacturing yields, it is preferable to use white light-emitting devices (single and tandem structures).

[0044] Next, embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention is not to be interpreted as being limited to the contents of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are used in common across different drawings for the same parts or parts having similar functions, and repeated explanations are omitted.

[0045] (Embodiment 1) This embodiment describes a display device according to one aspect of the present invention. While the display device is shown as having a light-emitting device, it may also be referred to as a light-emitting apparatus.

[0046] <Configuration Example 1> Figure 1A shows a cross-sectional view of the display device 100. The display device 100 has a layer 102 on a substrate 101. The layer 102 may be a layer containing transistors. These transistors can control the light-emitting devices. A configuration in which transistors for controlling each light-emitting device are provided on layer 102, etc., is referred to as an active-type display device. Note that the layer 102 does not necessarily have to contain transistors.

[0047] The display device 100 has light-emitting devices 130a, 130b, and 130c on layer 102. It is preferable to use OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) as light-emitting devices 130a, 130b, and 130c.

[0048] In this embodiment, the light-emitting devices 130a to 130c are formed using the above-described SBS structure and emit red, green, and blue light, respectively. For example, light-emitting device 130a emits red light, light-emitting device 130b located next to it emits green light, and light-emitting device 130c located next to it emits blue light. When there is no need to distinguish between the individual light-emitting devices and they are referred to collectively, they may be written as light-emitting device 130.

[0049] The light-emitting device 130 has a lower electrode and an upper electrode as a pair of electrodes, with an organic compound layer between the pair of electrodes. The display device 100 has conductive layers 111a, 111b, and 111c as the lower electrode. When there is no need to distinguish between each conductive layer and they are referred to collectively as conductive layer 111, they may be written as conductive layer 111.

[0050] When the upper surface of layer 102 becomes the surface on which the conductive layer 111 is formed, it is preferable that the upper surface of layer 102 has high flatness. The upper surface of the conductive layer 111 formed in a region with high flatness can maintain its flatness. When the organic compound layer 113 is formed on the conductive layer 111 on which flatness is maintained, it is preferable that the organic compound layer 113 does not break. Breakage due to a step in the surface on which it is formed is sometimes referred to as a step break.

[0051] To electrically connect to the transistor, the conductive layer 111 is formed on layer 102. If an opening is formed in layer 102, the upper surface of the conductive layer 111 may have a recess along the opening. To improve flatness, an insulating layer may be provided to fill the recess. When the recess is flattened, flatness is also ensured on the upper surface of the conductive layer 111 that overlaps the recess. As described above, this suppresses the step-breaking of the organic compound layer formed on the conductive layer 111.

[0052] The display device 100 has a conductive layer 115 as an upper electrode. The conductive layer 115 does not need to be divided for each light-emitting device. Therefore, the conductive layer 115 can be common to each light-emitting device. A layer that can be common to each light-emitting device is sometimes referred to as a common layer. Since the conductive layer 115 has the function of an electrode, it is sometimes referred to as a common electrode. Of course, the conductive layer 115 may also be divided for each light-emitting device. When they are divided, the designations a, b, and c can be added to distinguish them from each other.

[0053] While a conductive layer was shown as an example of a common layer, an insulating layer can also be used as a common layer. Furthermore, one or more layers selected from organic compound layers can also be used as a common layer.

[0054] One of the lower electrode and the upper electrode functions as the anode of the light-emitting device, and the other functions as the cathode of the light-emitting device.

[0055] Each light-emitting device 130a to 130c has an organic compound layer 113a, an organic compound layer 113b, and an organic compound layer 113c, respectively. When there is no need to distinguish between each organic compound layer and they are referred to collectively, they may be written as organic compound layer 113.

[0056] The organic compound layer 113 has at least an emissive layer. Furthermore, the organic compound layer 113 may form a laminate of the emissive layer and other functional layers. The other functional layers include one or more layers selected from hole injection layers, hole transport layers, electron transport layers, and electron injection layers.

[0057] The display device 100 has a substrate 120. Substrate 120 is sometimes referred to as the opposing substrate. As shown by the arrow in Figure 1A, light from the light-emitting device 130 can be extracted from the substrate 120 side. A structure in which light is extracted from the substrate 120 side is sometimes referred to as a top emission structure. In the display device 100, light from the light-emitting device 130 may also be extracted from the substrate 101 side. A structure in which light is extracted from the substrate 101 side is sometimes referred to as a bottom emission structure.

[0058] A light-emitting device according to one aspect of the present invention may have a microcavity structure. A microcavity structure is a structure in which a specific wavelength λ is resonated between an electrode on the light extraction side and an electrode facing that electrode. For example, a conductive material having light transmission and light reflectivity is used for the electrode on the extraction side. Such an electrode may be described as a semi-transparent / semi-reflective electrode, and a structure in which a reflective electrode and a transparent electrode are stacked can be used. A conductive material having light reflectivity can be used for the electrode facing it, and such an electrode may be described as a reflective electrode. In the case of the electrode facing it, a structure in which a reflective electrode and a transparent electrode are stacked may also be used. If light transmitted through the transparent electrode is reflected by the reflective electrode, a microcavity structure can be obtained. For example, in the case of a top emission structure, the upper electrode becomes the electrode on the extraction side, and the lower electrode becomes the electrode facing it.

[0059] A specific wavelength λ corresponds to the wavelength λ of light extracted from the light-emitting device. Since the specific wavelength λ differs for each light-emitting device, the distance between electrodes differs in display devices equipped with a microcavity structure. The distance between electrodes corresponds to the distance between the light-reflecting surfaces. For example, when a laminated structure of a reflective electrode and a transparent electrode is used for opposing electrodes, the light-reflecting surface is the surface of the reflective electrode. Therefore, the upper surface of the reflective electrode is used as the starting or ending point of the distance between electrodes. Due to this configuration, the thickness of the organic compound layer differs for each light-emitting device in display devices using a microcavity structure.

[0060] For wavelength λ to resonate, the distance between electrodes, i.e., the optical distance, must satisfy nλ / 2 (where n is an integer greater than or equal to 1, and λ is the wavelength of the color to be resonated, for example, the wavelength of blue). In the above formula, the value of n is any integer, and the value of n may differ for each light-emitting device. For red or green light-emitting devices, the distance may be calculated using n=1, and for blue light-emitting devices, the distance may be calculated using n=2. If the value of n is small, the thickness of the organic compound layer in the blue light-emitting device may become very thin. To increase the thickness of the organic compound layer in the blue light-emitting device, it is advisable to make the value of n used for the blue light-emitting device larger than the value of n used for the red or blue light-emitting device.

[0061] In a microcavity structure, light of wavelengths that do not resonate is attenuated. Therefore, it is possible to extract light with a narrow half-width (FWHM), i.e., a narrow spectral FWHM, from the light-emitting device. Light with a narrow FWHM is desirable due to its high directivity, and it is possible to extract light with high color purity from the light-emitting device.

[0062] In Figure 1A, the above microcavity structure is applied to the light-emitting device 130. Therefore, the thickness Da of the organic compound layer 113a is different from the thickness Db of the organic compound layer 113b. Furthermore, the thickness Db is different from the thickness Dc of the organic compound layer 113c. Figure 1A illustrates an organic compound layer 113 having the relationship Da > Db > Dc.

[0063] The thickness Da of the organic compound layer corresponds to the distance between the upper surface of the conductive layer 111a and the lower surface of the conductive layer 115. The thickness Db of the organic compound layer corresponds to the distance between the upper surface of the conductive layer 111b and the lower surface of the conductive layer 115. The thickness Dc of the organic compound layer corresponds to the distance between the upper surface of the conductive layer 111c and the lower surface of the conductive layer 115.

[0064] In one aspect of the present invention, a pattern is formed using lithography or the like to reduce the spacing between adjacent organic compound layers. Photolithography can be used as the lithography method. Photolithography is a method of exposing a photosensitive material to a desired pattern and forming a pattern from the exposed and unexposed parts. Reduction exposure using a stepper can be used for exposure.

[0065] In one embodiment of the present invention, a pattern can be formed of organic compound layers using photolithography. Specifically, according to one embodiment of the present invention, the spacing between adjacent organic compound layers 113 (for example, the spacing labeled W in Figure 1A) can be reduced to less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less, thereby providing a high-resolution display device.

[0066] Furthermore, in the manufacturing method according to one embodiment of the present invention, it is also possible to use an exposure apparatus for LSI (large scale integration). By using such an exposure apparatus, the above-mentioned interval (for example, the interval labeled W in Figure 1A) can be set to 500 nm or less, 200 nm or less, 100 nm or less, and even 50 nm or less.

[0067] On the other hand, in the method of forming a pattern of organic compound layers using a fine metal mask during vacuum deposition, it is difficult to narrow the spacing between adjacent organic compound layers. Typically, when using a fine metal mask, it is difficult to form a spacing of 10 μm or less between adjacent organic compound layers.

[0068] In addition, in one embodiment of the present invention, a pattern formation method using photolithography and a pattern formation method using a metal mask (including a fine metal mask or a rough metal mask) may be used in combination.

[0069] Pattern formation using photolithography or similar methods is sometimes simply referred to as processing. The sides of the processed organic compound layer 113 are often cut perpendicular or approximately perpendicular to the substrate 101, as shown in Figure 1A. In other words, according to the manufacturing method of one aspect of the present invention, the contour of the organic compound layer 113 does not widen.

[0070] In one embodiment of the present invention, the organic compound layer 113 has a shape that is perpendicular or approximately perpendicular to the substrate 101, raising concerns about step breaks in the common layer. The common layer is the conductive layer 115 described above. Step breaks in the conductive layer 115 cause non-illumination of the light-emitting device, leading to malfunctions in the display device 100.

[0071] Therefore, in one embodiment of the present invention, the display device 100 is provided with an insulating layer 127 between the organic compound layers 113 to mitigate the step difference on the side surface of the organic compound layers 113. For example, by having an insulating layer 127 located between the organic compound layers 113, the step break in the common layer can be suppressed.

[0072] The insulating layer 127 may be made of an inorganic or organic material. An organic material is preferable because it is easier to fill even when the spacing indicated by W in Figure 1A is narrow. When using an organic material, the viscosity of the organic material may be adjusted using a diluent. Furthermore, when using a photosensitive (negative and positive) organic material, a tapered shape can be provided at the edges of the insulating layer 127 depending on the exposure conditions. The edges of the insulating layer 127 are one of the regions where the common layer is most prone to step breakage; however, it is preferable that the common layer be formed to follow the tapered shape, as this can suppress step breakage. Additionally, it is preferable that the insulating layer 127 has a flat top surface.

[0073] The insulating layer 127 may be a single-layer or multi-layer structure. In the case of a multi-layer structure, it is preferable to use an organic material for the upper insulating layer.

[0074] The insulating layer 127 can also suppress delamination of the light-emitting device 130, such as the organic compound layer 113.

[0075] The insulating layer 127 also suppresses short circuits between the conductive layer 115 and the conductive layer 111.

[0076] The insulating layer 127 should be positioned between the organic compound layers 113 in such a way as to achieve the above effects. For example, if the insulating layer 127 is positioned between the organic compound layers 113, even if a gap is observed in a cross-sectional view where the insulating layer 127 is absent in some areas between the organic compound layers 113, it is sufficient if any one of the above effects can be achieved.

[0077] Furthermore, even if the upper surface of the insulating layer 127 has an uneven shape, it is sufficient if any one of the above effects can be achieved.

[0078] To carry out a photolithography method according to one aspect of the present invention, it is preferable that the light-emitting device 130 has sacrificial layers 118a, 118b, and 118c, as shown in Figure 1A, for example. When there is no need to distinguish between each sacrificial layer and they are referred to collectively as sacrificial layer 118, they may be written as sacrificial layer 118. Sacrificial layer 118 is formed on the workpiece surface of the organic compound layer 113, and can suppress unnecessary processing of the organic compound layer 113. Of course, it is possible to perform photolithography processing on the organic compound layer 113 even without sacrificial layer 118.

[0079] The sacrificial layer 118 may be a single-layer or multi-layer structure. In the case of a multi-layer structure, it is preferable to use a metallic material for the upper sacrificial layer. A sacrificial layer containing a metallic material can be used as a hard mask.

[0080] The sacrificial layer 118 can be positioned between the upper surface of the organic compound layer 113 and the insulating layer 127. As an effect of this arrangement, if a photosensitive material is used for the insulating layer 127, the organic compound layer 113 in contact with it may disappear, but this disappearance can be partially suppressed. Of course, since the insulating layer 127 is also in contact with the side surface of the organic compound layer 113, in order to suppress the disappearance of the organic compound layer 113, it is better to provide an insulating layer or the like between the organic compound layer 113 and the insulating layer 127 in addition to the sacrificial layer.

[0081] Furthermore, since the organic compound layer 113 is processed by photolithography or the like after the sacrificial layer 118 is formed, damage to the organic compound layer 113 during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-emitting device.

[0082] When processing an organic compound layer by photolithography or the like without providing a sacrificial layer, the organic compound layer, such as the light-emitting layer, may be damaged by the processing, significantly impairing the reliability of the display device. In one embodiment of the present invention, forming the sacrificial layer 118 as described above is preferable as it can suppress processing damage. To further suppress processing damage, it is preferable to process the layer with a functional layer, such as an electron transport layer or a hole transport layer, laminated on top of the light-emitting layer. It is preferable that the sacrificial layer 118 is located on top of the functional layer. When processing the organic compound layer by photolithography or the like in this state, processing damage to the light-emitting layer is suppressed, making it possible to provide a highly reliable display panel.

[0083] Furthermore, the sacrificial layer 118 in the light-emitting region of the light-emitting device 130 is removed as appropriate after processing the organic compound layer 113. That is, in order to secure the light-emitting region, a portion of the sacrificial layer 118 that overlaps with the organic compound layer 113 is removed. When viewed from above after removal, an opening is formed in the sacrificial layer 118, and the organic compound layer 113 is exposed through this opening. Of course, the entire sacrificial layer 118 on the organic compound layer 113 may also be removed. Since wet etching can be used to remove the sacrificial layer 118, no processing damage is caused to the organic compound layer, such as the light-emitting layer.

[0084] The insulating layer 127 described above can be used as a mask to remove the sacrificial layer 118. In this case, the end of the sacrificial layer 118 on the light-emitting region side has an area that coincides with or roughly coincides with the end of the insulating layer 127.

[0085] As mentioned before, the light-emitting device 130 in one embodiment of the present invention has a microcavity structure, and therefore the thickness of the organic compound layer 113 differs. As a result, the position of the uppermost surface of the organic compound layer 113a, which is the surface on which the sacrificial layer 118 is formed, differs from the height of the uppermost surfaces of the organic compound layer 113b and the organic compound layer 113c, which are the surfaces on which the sacrificial layer 118 is formed. This condition is sometimes referred to as having different heights for the organic compound layer 113. When the sacrificial layer 118 is formed and then the insulating layer 127 is formed on the sacrificial layer 118 under these conditions where the heights of the organic compound layers 113 differ, defects such as peeling from the edges of the insulating layer 127 (simply referred to as defects of the insulating layer 127) tend to occur. The inventors considered that this defect was due to the uneven height of the surface on which the insulating layer 127 is formed for each organic compound layer.

[0086] If a defect occurs in the insulating layer 127, the above-mentioned effects cannot be achieved. For example, if a defect occurs in the insulating layer 127, the conductive layer 115, which is a common layer, may come into contact with the light-emitting layer of each organic compound layer. Also, the conductive layer 115 may come into contact with the conductive layer 111. Such contact will cause the light-emitting device to stop emitting light. In view of the above, the inventors considered that the formation of the insulating layer 127 as designed would lead to an improvement in the manufacturing yield of the display device.

[0087] Therefore, in one embodiment of the present invention, in order to suppress defects in the insulating layer 127, the height of the surface to be formed on the insulating layer 127 and the height of the surface to be formed on the edges of the insulating layer 127 are made equal. Note that "equal height" includes configurations where the heights from a reference surface are the same or approximately the same. Approximately the same configuration includes those where the difference in height between them is 100 nm or less, preferably 50 nm or less, and more preferably 30 nm or less. In other words, any height difference that suppresses defects in the insulating layer 127 is included in the approximately the same configuration. The surface to be formed on the insulating layer 127 is, for example, the upper surface of the sacrificial layer 118, which in Figure 1A is shown as the height Ha of the sacrificial layer 118a, the height Hb of the sacrificial layer 118b, and the height Hc of the sacrificial layer 118c. In Figure 1A, the reference surface for the above heights Ha, Hb, and Hc can be the lower surface of the lower electrode. Since the thickness of the lower electrode may differ for each light-emitting device, the lower surface of the lower electrode is preferred as the reference surface. When the lower surface of the lower electrode serves as the reference surface, it is preferable that the flatness of the surface of layer 102 is ensured. If the surface of layer 102 is not flat, the reference surface can be the upper surface of substrate 101 in Figure 1A.

[0088] A display device 100 according to one aspect of the present invention has a configuration in which the height of the surface to be formed of the insulating layer 127 is uniform while filling the microcavity structure. It is sufficient that at least a portion of the height of the surface to be formed of the insulating layer 127 is uniform. Compared to an insulating layer 127 formed with uneven surface heights for each organic compound layer, an insulating layer 127 formed with a uniform height for a portion of the surface has reduced defects. This reduction in defects can improve the manufacturing yield of the display device 100.

[0089] Figure 1A illustrates an example of a configuration in which the height Hc of the sacrificial layer 118c is increased, as an example of a configuration in which the height of the surface to be formed on the insulating layer 127 is aligned. When the present invention is not applied, the height Hc is lower than the heights Ha and Hb.

[0090] To increase the height Hc, an additional layer is added below the sacrificial layer 118c. For example, in Figure 1A, an insulating layer 103 is formed to increase the height Hc. If the insulating layer 103 is formed to overlap with a portion of the conductive layer 111c, the height Hc will be increased. The edges of the insulating layer 103 have a region that overlaps with the edges of the conductive layer 111c.

[0091] The insulating layer 103 only needs to overlap with the conductive layer 111c, and the position of its edges is not limited. Although not shown in Figure 1A, the edges of the insulating layer 103 may extend beyond the edges of the conductive layer 111c. The extended region is preferably located outside the conductive layer 111c. With this configuration, at least the outer periphery of the conductive layer 111c is covered with the insulating layer 103, which further suppresses short circuits between the conductive layer 111c and the conductive layer 115.

[0092] The insulating layer 103 may be made of an inorganic or organic material and may have a single-layer or multi-layer structure. When the insulating layer 103 is made of an inorganic material, a thickness of 10 nm to 200 nm is preferred, preferably 10 nm to 100 nm, and more preferably 10 nm to 60 nm. When the insulating layer 103 is made of an organic material, a thickness of 0.1 μm to 1 μm is preferred, preferably 0.1 μm to 0.5 μm.

[0093] A configuration in which the heights of the surfaces formed on the insulating layer 127 are roughly the same includes a difference in height of 100 nm or less, preferably 50 nm or less, and more preferably 30 nm or less, but it is preferable that the difference in height is smaller than the thickness of the insulating layer 103.

[0094] The insulating layer 103 increases the height Hc, and since the height Hc is now the same as the height Hb, defects in the insulating layer 127 can be suppressed.

[0095] Furthermore, since the insulating layer 103 is selectively provided in the non-light-emitting region, the thickness Dc can be adjusted in the light-emitting region. In other words, the microcavity structure can be applied to the display device 100 without being affected by the insulating layer 103.

[0096] The thickness Dc of the organic compound layer 113c is thinner than that of other light-emitting devices, and it is thought that defects are likely to occur in the vicinity of the organic compound layer 113c in the insulating layer 127. By increasing the height Hc of the vicinity of the organic compound layer 113c, where defects are most likely to occur, these defects can be suppressed.

[0097] Although not shown in Figure 1A, the organic compound layer 113c also has a region adjacent to the organic compound layer 113a. The increased height Hc reduces the difference with height Ha. This also helps to suppress defects in the insulating layer 127.

[0098] <Configuration Example 2> Figure 1A illustrates an example in which an insulating layer 103 is provided on the light-emitting device 130c, but the invention is not limited to this. The display device 100 shown in Figure 1B has a configuration in which the insulating layer 103 is provided on the light-emitting devices 130b and 130c.

[0099] The insulating layer 103 is selectively formed on the conductive layers 111b and 111c. Since the height Hb is increased and aligns with the height Ha, defects in the insulating layer 127 can be suppressed.

[0100] Furthermore, since the insulating layer 103 is selectively provided in the non-light-emitting region, the thicknesses Db and Dc can be adjusted in the light-emitting region. In other words, the microcavity structure can be applied to the display device 100 without being affected by the insulating layer 103.

[0101] The increased height Hb, and the fact that height Hb is now aligned with height Ha, helps to suppress defects in the insulating layer 127. Additionally, the increased height Hc reduces the difference between it and heights Hb and Ha, thus further suppressing defects in the insulating layer 127.

[0102] <Configuration Example 3> A configuration different from those shown in Figures 1A and 1B will be described. The display device 100 shown in Figure 2 has a first insulating layer 103a and a second insulating layer 103b with different film thicknesses. The second insulating layer 103b has a larger film thickness than the first insulating layer 103a. For example, the film thickness of the second insulating layer 103b is preferably 1.5 to 3 times, more preferably 1.8 to 2.2 times, the film thickness of the first insulating layer 103a. Also, the film thickness of the second insulating layer 103b is preferably 0.5 to 2 times, more preferably 0.8 to 1.2 times, the difference between the thickness Db and the thickness Dc.

[0103] The first insulating layer 103a is selectively formed on the light-emitting device 130b, and the second insulating layer 103b is selectively formed on the light-emitting device 130c. Since the heights Ha, Hb, and Hc are aligned, defects in the insulating layer 127 can be suppressed.

[0104] Furthermore, since the first insulating layer 103a and the second insulating layer 103b are selectively provided in the non-light-emitting region, the thicknesses Da, Db, and Dc can be adjusted in the light-emitting region. In other words, a microcavity structure can be applied to the display device 100 without being affected by the first insulating layer 103a and the second insulating layer 103b.

[0105] With this configuration, the height of the surface to which the insulating layer 127 is formed, located between the light-emitting devices, is aligned, thereby suppressing defects in the insulating layer 127.

[0106] <Configuration Example 4> A configuration different from those in Figures 1A, 1B, and 2 will be described. Figure 3 shows a configuration in which the insulating layer 103 is omitted, and the thickness of the sacrificial layer 118c is adjusted to match the height Hc of the sacrificial layer 118c to the height Hb of the sacrificial layer 118b.

[0107] With this configuration, the height of the surface to which the insulating layer 127 is formed, located between the light-emitting devices, is aligned, thereby suppressing defects in the insulating layer 127.

[0108] <Configuration Example 5> A configuration different from those in Figures 1A, 1B, 2, and 3 will be described. In Figure 4, an insulating layer 103 is not provided, and the thicknesses of the sacrificial layers 118b and 118c are adjusted to match the height Hc of the sacrificial layer 118c to the height Ha of the sacrificial layer 118a, and the height Hb of the sacrificial layer 118b to the height Ha of the sacrificial layer 118a.

[0109] With this configuration, the height of the surface to which the insulating layer 127 is formed, located between the light-emitting devices, is aligned, thereby suppressing defects in the insulating layer 127.

[0110] <Configuration Example 6> A configuration different from those shown in Figures 1A, 1B, 2, 3, and 4 will be described. Figure 5A shows an example configuration in which an organic material is used as the insulating layer 103o covering a portion of the conductive layer 111c. By providing the insulating layer 103o, the insulating layer 127 corresponding to the light-emitting device 130c can be omitted. For example, the insulating layer 127 is omitted in the region corresponding to Wc between the light-emitting devices 130b and 130c, and the insulating layer 103o is provided. Also, the insulating layer 127 is provided in the region corresponding to Wb between the light-emitting devices 130b and 130c. In other words, the insulating layer 127 and the insulating layer 103o are present between the light-emitting devices 130b and 130c.

[0111] The insulating layer 127 may be provided in contact with the insulating layer 103o, or an insulating layer or the like may be located between them.

[0112] The insulating layer 103o can be made of a photosensitive (negative and positive) organic material, and a tapered shape can be provided at the edges of the insulating layer 103o.

[0113] The insulating layer 103o can also suppress delamination of the film on the light-emitting device 130.

[0114] The insulating layer 103o can also suppress short circuits between the conductive layer 115 and the conductive layer 111.

[0115] Since the insulating layer 103o is provided before the organic compound layer 113 is formed, it is preferable that the heat resistance of the organic compound layer 113 does not need to be considered, and sufficient heat treatment can be performed. Heat treatment can reduce moisture in the insulating layer 103o, thereby suppressing deterioration of the organic compound layer 113 due to moisture.

[0116] In this configuration, since some of the insulating layer 127 is absent, defects in the insulating layer 127 can be suppressed.

[0117] <Configuration Example 7> A configuration different from those shown in Figures 1A, 1B, 2, 3, 4, and 5A will be described. Figure 5B shows an example configuration in which an organic material is used as the insulating layer 103o covering a portion of the conductive layer 111c, and an inorganic material is used as the insulating layer 103d covering a portion of the conductive layer 111b. By providing the insulating layer 103o, the insulating layer 127 corresponding to the light-emitting device 130c can be omitted. The insulating layer 103d shows a configuration in which the height Hb is aligned with the height Ha.

[0118] In this configuration, since some of the insulating layer 127 is absent, defects in the insulating layer 127 can be suppressed.

[0119] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0120] (Embodiment 2) This embodiment describes a display device according to one aspect of the present invention and a method for manufacturing the same.

[0121] <Top view of pixel section 104> Figure 6A shows a top view of the pixel section 104 of the display device 100. The pixel section 104 is sometimes referred to as a pixel region. In the pixel section 104, you can see how multiple light-emitting devices are arranged. By using the above-described SBS structure for each light-emitting device, different colors can be emitted. In Figure 6A, the light-emitting regions of each light-emitting device are shown as sub-pixels 110a, 110b, and 110c. Sub-pixels of the same color are given the same code. For example, sub-pixel 110a can emit red light, sub-pixel 110b located next to it can emit green light, and sub-pixel 110c located next to it can emit blue light. The light-emitting regions in Figure 6A are shown as rectangles, but are not limited to rectangles.

[0122] When there is no need to distinguish between sub-pixels 110a, 110b, and 110c, they may be referred to simply as sub-pixels.

[0123] In Figure 6A, according to the configuration example 1 of the above embodiment, an insulating layer 103 is provided in the region corresponding to the sub-pixel 110c. The insulating layer 103 can be read as insulating layer 103o.

[0124] It is preferable to assign sub-pixel 110a to the red (sometimes denoted as R) light-emitting region, sub-pixel 110b to the green (sometimes denoted as G) light-emitting region, and sub-pixel 110c to the blue (sometimes denoted as B) light-emitting region. Alternatively, sub-pixel 110a may be assigned to the yellow (sometimes denoted as Y) light-emitting region, sub-pixel 110b to the cyan (sometimes denoted as C) light-emitting region, and sub-pixel 110c to the magenta (sometimes denoted as M) light-emitting region.

[0125] The configuration having at least the sub-pixels 110a, 110b, and 110c described above enables full-color display. The smallest unit capable of full-color display is denoted as pixel 110. Pixel 110 has at least sub-pixels 110a, 110b, and 110c.

[0126] It should be noted that the display device 100 according to one embodiment of the present invention is not limited to the above-mentioned light-emitting colors. The display device 100 according to one embodiment of the present invention may have, for example, a white light-emitting region in addition to red, green, and blue light-emitting regions. Furthermore, the display device 100 according to one embodiment of the present invention may have areas other than the light-emitting regions, such as a light-receiving region.

[0127] The subpixels described above are preferably arranged in a matrix. A matrix is ​​a structure arranged according to a certain regularity. The arrangement of subpixels in a matrix will be explained using the X-axis and the Y-axis intersecting the X-axis shown in Figure 6A. First, subpixels 110a, 110b, and 110c are arranged in order along the X-axis. With such an arrangement, subpixel 110a is adjacent to subpixel 110b or subpixel 110c. In the display device 100 of one aspect of the present invention shown in Figure 6A, adjacent light-emitting devices along the X-axis emit different colors.

[0128] Furthermore, along the Y-axis, multiple sub-pixels 110a, multiple sub-pixels 110b, and multiple sub-pixels 110c are arranged in a row. An arrangement that satisfies this condition is called a stripe arrangement. In the display device 100 of one aspect of the present invention shown in Figure 6A, adjacent sub-pixels along the Y-axis emit the same color.

[0129] The display device 100 has, in addition to the pixel section 104, a connection section 140, for example. The connection section 140 is sometimes also called a cathode contact section. The connection section 140 is often located outside the pixel section 104, and this location corresponds to the non-light-emitting region of the display device 100.

[0130] <Cross-sectional view of pixel section 104> Figure 6B shows a cross-sectional view along the line X1-X2 in Figure 6A.

[0131] <Layer 102> In Figure 6B, the substrate and other components are omitted, but layer 102 is provided on such substrate and other components. The substrate may be flexible. Layer 102 is preferably a layer containing transistors.

[0132] <Lower electrode> The lower electrode of the light-emitting device is provided on layer 102. The lower electrode functions as either the anode or the cathode of the light-emitting device. In Figure 6B, conductive layers 111a, 111b, and 111c are shown as the lower electrode according to the above configuration example 1. Conductive layers 111a, 111b, and 111c can each be electrically connected to a transistor. Conductive layers electrically connected to a transistor are sometimes referred to as pixel electrodes.

[0133] The edges of the conductive layer 111 preferably have a tapered shape. A tapered shape includes a shape in which the film thickness gradually decreases toward the outside. When processing the conductive layer 111, recesses 2a may be formed in layer 102. Recesses 2a may be referred to as over-etched regions. If it is not possible to form recesses 2a, it is advisable to place a layer of inorganic material on the outermost surface of layer 102. If a layer of organic material is located on the outermost surface of layer 102, recesses 2a are more likely to form.

[0134] The organic compound layer 113 is formed on the upper and side surfaces of the conductive layer 111, as well as in the region overlapping with the recess 2a. In the region where the conductive layer 111 has a tapered shape, the organic compound layer 113 is tilted, thereby suppressing the step breakage of the organic compound layer 113.

[0135] When the lower electrode functions as an anode, it is preferable to use a material with a high work function.

[0136] <Top electrode> The upper electrode functions as either the anode or the cathode of the light-emitting device. In Figure 6B, according to the above configuration example 1, the upper electrode has a conductive layer 115. The conductive layer 115 is a common layer that can be shared by each light-emitting device.

[0137] When the upper electrode functions as a cathode, it is preferable to use a material with a small work function for the conductive layer 115.

[0138] <Organic compound layer> The organic compound layer may have a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. The organic compound layer is formed by laminating functional layers selected from the above, and has at least a light-emitting layer.

[0139] Alternatively, the organic compound layer may have a configuration in which a first light-emitting unit, a charge-generating layer (also called an intermediate layer) on the first light-emitting unit, and a second light-emitting unit on the charge-generating layer are laminated together.

[0140] The luminescent layer is a layer containing a luminescent material. The luminescent layer may contain one or more types of luminescent materials. Suitable luminescent materials include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Furthermore, materials emitting near-infrared light may also be used as luminescent materials.

[0141] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0142] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0143] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0144] The light-emitting layer may have one or more organic compound layers (sometimes referred to as host material, assist material, etc.) in addition to the light-emitting substance (sometimes referred to as guest material). One or more of the organic compound layers may be hole-transporting materials and / or electron-transporting materials. Furthermore, one or more of the organic compound layers may be bipolar materials or TADF materials.

[0145] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (corresponding to the phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting device.

[0146] The organic compound layer 113 may further include layers other than the light-emitting layer, such as a material with high hole injection properties, a material with high hole transport properties, a hole blocking material, a material with high electron transport properties, a material with high electron injection properties, an electron blocking material, or a bipolar material (a material with high electron transport and hole transport properties).

[0147] The organic compound layer 113 may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the organic compound layer 113 can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0148] For example, the organic compound layer 113 may have one or more of the following in addition to the light-emitting layer: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0149] Among the organic compound layers 113, one or more of the following can be applied as layers common to each color: hole injection layer, hole transport layer, hole blocking layer, electron blocking layer, electron transport layer, and electron injection layer. These are sometimes referred to as common layers. In Figure 6B, an electron injection layer 114 is used as the common layer.

[0150] All layers of the organic compound layer 113 may be fabricated separately for each light-emitting device. In other words, the organic compound layer 113 does not need to have a common layer.

[0151] Preferably, each organic compound layer 113 has an emissive layer and a carrier transport layer on the emissive layer. This suppresses exposure of the emissive layer to the outermost surface during the manufacturing process of the display device 100, thereby reducing damage to the emissive layer. The carrier transport layer may be a hole transport layer or an electron transport layer. This can improve the reliability of the light-emitting device.

[0152] The hole injection layer, which is one of the organic compound layers 113, is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection properties. Examples of materials with high hole injection properties include aromatic amine compounds and composite materials containing a hole transport material and an acceptor material (electron-accepting material).

[0153] The hole transport layer, which is one of the organic compound layers 113, is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. The hole transport layer is a layer containing a hole-transporting material. The hole-transporting material is 1 × 10 -6 cm 2 Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials include π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton), which are materials with high hole transport capabilities.

[0154] The electron transport layer, which is one of the organic compound layers 113, is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. The electron transport layer is a layer containing an electron-transporting material. The electron-transporting material is 1 × 10 -6 cm 2 Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Examples of electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds.

[0155] The electron injection layer, which is either an organic compound layer 113 or a common layer, is a layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Alkali metals, alkaline earth metals, or compounds thereof can be used as the material with high electron injection properties. A composite material containing an electron transport material and a donor material (electron-donating material) can also be used as the material with high electron injection properties.

[0156] Examples of electron injection layers include lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), and calcium fluoride (CaF). x (where X is any number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatrium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatrium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatrium (abbreviation: LiPPP), lithium oxide (LiO xAlkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Furthermore, the electron injection layer may be a multilayer structure of two or more layers. For example, this multilayer structure may consist of lithium fluoride as the first layer and ytterbium as the second layer.

[0157] When fabricating a tandem light-emitting device as the organic compound layer 113, a charge generation layer (sometimes referred to as an intermediate layer) is provided between the two light-emitting units. The intermediate layer has the function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between the pair of electrodes.

[0158] The charge generation layer has at least a charge generation region. The charge generation region preferably contains an acceptor material, and may contain the same acceptor material as the hole injection layer.

[0159] Furthermore, the charge generation region preferably includes a composite material containing an acceptor material and a hole transporter material, and may contain the same hole transporter material as that found in the hole injection layer or hole transporter layer. The composite material containing an acceptor material and a hole transporter material may be a laminated structure consisting of a layer containing an acceptor material and a layer containing a hole transporter material, or it may be a layer in which the acceptor material and the hole transporter material are mixed. The mixed layer can be obtained, for example, by co-depositing the acceptor material and the hole transporter material.

[0160] Furthermore, in the charge generation layer, a donor material may be present instead of an acceptor material, and a layer containing both an electron transport material and a donor material may be used.

[0161] Furthermore, the charge generation layer preferably includes a layer containing a material with high electron injection potential. This layer can also be called an electron injection buffer layer. The electron injection buffer layer is preferably provided between the charge generation region and the electron transport layer. By providing an electron injection buffer layer, the injection barrier between the charge generation region and the electron transport layer can be relaxed, allowing electrons generated in the charge generation region to be easily injected into the electron transport layer.

[0162] The electron injection buffer layer preferably contains an alkali metal or an alkaline earth metal, and can, for example, be configured to contain an alkali metal compound or an alkaline earth metal compound. Specifically, the electron injection buffer layer preferably has an inorganic compound containing an alkali metal and oxygen, or an inorganic compound containing an alkaline earth metal and oxygen, and more preferably has an inorganic compound containing lithium and oxygen (such as lithium oxide (Li2O)). In addition, any other material applicable to the electron injection layer described above can be suitably used for the electron injection buffer layer.

[0163] The boundary between the charge generation region and the electron injection buffer layer can be unclear. For example, when a very thin charge generation layer is analyzed by time-of-flight secondary ion mass spectrometry (TOF-SIMS), both the elements present in the charge generation region and the elements present in the electron injection buffer layer may be detected. When lithium oxide is used as the electron injection buffer layer, alkali metals such as lithium are highly diffusive, so lithium may be detected not only in the electron injection buffer layer but throughout the entire charge generation layer. Therefore, the region in which lithium is detected by TOF-SIMS can be considered the charge generation layer.

[0164] The charge generation layer preferably has a layer containing a material with high electron transport properties. This layer can also be called an electron relay layer. The electron relay layer is preferably provided between the charge generation region and the electron injection buffer layer. If the charge generation layer does not have an electron injection buffer layer, the electron relay layer is preferably provided between the charge generation region and the electron transport layer. The electron relay layer has the function of preventing interaction between the charge generation region and the electron injection buffer layer (or electron transport layer) and smoothly transferring electrons.

[0165] Suitable electron relay layers can be electron-transporting materials. Furthermore, phthalocyanine-based materials such as copper(II) phthalocyanine (abbreviated as CuPc) can be suitably used for the electron relay layer. Additionally, metal complexes having a metal-oxygen bond and an aromatic ligand can be suitably used for the electron relay layer.

[0166] Furthermore, the charge generation region, electron injection buffer layer, and electron relay layer described above may not be clearly distinguishable depending on their cross-sectional shape or characteristics.

[0167] The charge generation layer may have a donor material instead of an acceptor material. For example, the charge generation layer may have a layer containing an electron transport material and a donor material, which is applicable to the electron injection layer described above.

[0168] When stacking light-emitting units, the rise in driving voltage can be suppressed by providing a charge generation layer between the two light-emitting units.

[0169] <Microcavity structure> It is preferable that the light-emitting device 130 has a microcavity structure.

[0170] Since the light-emitting devices 130a, 130b, and 130c to which the microcavity structure is applied have film thicknesses corresponding to the wavelength (emission color) of the emitted light, the film thicknesses of at least the organic compound layer 113a, organic compound layer 113b, and organic compound layer 113c are different from each other.

[0171] <Insulating layer 103> The light-emitting device 130c has an insulating layer 103 that overlaps with a portion of the conductive layer 111c in order to reduce the difference in film thickness. If the end of the conductive layer 111c has a tapered shape, the insulating layer 103 that overlaps with that end is also inclined. The end of the insulating layer 103 may extend beyond the end of the conductive layer 111c. If it extends, the insulating layer 103 is also formed in the recess 2a of layer 102.

[0172] The insulating layer 103 may be made of an inorganic or organic material and may have a single-layer or multi-layer structure. When the insulating layer 103 is made of an inorganic material, a thickness of 10 nm to 200 nm is preferred, preferably 10 nm to 100 nm, and more preferably 10 nm to 60 nm. When the insulating layer 103 is made of an organic material, a thickness of 0.1 μm to 1 μm is preferred, preferably 0.1 μm to 0.5 μm.

[0173] The inorganic material of the insulating layer 103 may contain one or more of the following: aluminum oxide, magnesium oxide, silicon oxide, silicon oxide nitride, silicon oxide nitride, silicon nitride, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, and tantalum oxide.

[0174] The organic material of the insulating layer 103 may include an organic resin such as polyimide resin, polyamide resin, acrylic resin, siloxane resin, silicone resin, epoxy resin, or phenolic resin.

[0175] Furthermore, materials obtained by adding impurity elements such as lanthanum (La), nitrogen, or zirconium (Zr) to the above-mentioned inorganic or organic materials may also be used.

[0176] When the insulating layer 103 has a laminated structure, it is preferable to use an inorganic material for the lower layer and an organic material for the upper layer.

[0177] The insulating layer 103, formed from organic material, may have a rounded upper edge at the opening. This rounded shape is sometimes described as having curvature. If the insulating layer 103 is in a laminated structure, at least the upper edge of the upper layer needs to have curvature. The lower edge of the insulating layer 103 can also be given curvature.

[0178] The ends of the insulating layer 103 preferably have a tapered shape.

[0179] During processing of the insulating layer 103, a recess 2b may be formed in layer 102. This recess 2b is deeper than the recess 2a formed when processing the conductive layer 111.

[0180] <Photolithography> The organic compound layer 113 is processed using photolithography. Therefore, it is preferable to provide a sacrificial layer 118 on top of the organic compound layer 113.

[0181] When processing the organic compound layer 113 using the above photolithography method, a recess 2c may be formed in layer 102. When processing the organic compound layer 113 using the above photolithography method, the recess 2b formed in layer 102 may become even deeper. The recesses 2b and 2c become deeper than the recess 2a formed when processing the conductive layer 111.

[0182] <Insulating layer 125> The display device 100 preferably has an insulating layer 125. Immediately after processing, the sides of the organic compound layer 113 are exposed to the atmosphere and are prone to degradation. Degradation of the sides leads to lateral leakage current between the light-emitting devices 130. For this reason, an insulating layer 125 may be provided to cover the edges of the organic compound layer 113.

[0183] Furthermore, among the organic compound layers 113, the hole injection layer, electron injection layer, or charge generation layer, etc., are often layers with relatively high conductivity. Therefore, it is preferable to form an insulating layer 125 in order to ensure the insulating properties of the edges of the organic compound layer 113.

[0184] The insulating layer 125 covering the edges of the organic compound layer 113 may be formed by ALD (Advanced Aluminum Deposition) or the like. Furthermore, it is preferable to use a dense insulating layer with high density for the insulating layer 125; for example, an aluminum oxide film formed by ALD may be used. The insulating layer 125 can improve the reliability of the light-emitting device.

[0185] <Insulating layer 127> The display device 100 preferably has an insulating layer 127. An organic material is often used as the insulating layer 127, and it is even more preferable to use an organic material with low moisture content. The insulating layer 103 allows the heights of the formed surfaces of the insulating layer 127, such as height Hb and height Hc, to be uniform. This helps to suppress defects in the insulating layer 127.

[0186] The upper surface of the insulating layer 127 may have irregularities. The factors causing these irregularities are recesses 2a and recesses 2b.

[0187] <Common layer> In the above configuration example 1, only the conductive layer 115 was used as a common layer, but the display device 100 can use one of the organic compound layers and the conductive layer 115 as a common layer. An electron injection layer 114 is used as one of the organic compound layers.

[0188] <Protective layer 131 etc.> The display device 100 may have a protective layer 131 covering the light-emitting device 130. A substrate 120 is bonded to the protective layer 131. In Figure 6B, a solid encapsulation structure is used, so the substrate 120 is bonded by a resin layer 122.

[0189] In this embodiment, a top view and a cross-sectional view of the pixel section 104 to which the above-described configuration example 1 is applied have been described, but configurations other than configuration example 1 can also be applied.

[0190] <Connection part 140> Figure 7A shows a cross-sectional view of the connection portion 140 along Y1-Y2 in Figure 6A. Preferably, the connection portion 140 is formed simultaneously with the pixel portion 104. Specifically, the connection portion 140 is the region where the conductive layer 115 electrically connects to an external signal such as a flexible printed circuit board (FPC). Therefore, a variety of configurations can be adopted.

[0191] Figure 7A shows an example of a connection portion 140, in which the conductive layer 115 is electrically connected to the conductive layer 111m. The conductive layer 111m is formed on layer 102 through the same process as the conductive layer 111 of the pixel portion 104. Layer 102 has a recess 2a formed on it, similar to the pixel portion 104. The ends of the conductive layer 111m have a tapered shape, similar to the pixel portion 104.

[0192] An insulating layer 103m is formed on the conductive layer 111m through the same process as the insulating layer 103 of the pixel portion 104. An opening is formed in the insulating layer 103m to expose the conductive layer 111m.

[0193] A protective layer 131 is formed on the conductive layer 115. The substrate 120 can then be bonded to the protective layer 131 via the resin layer 122. The conductive layer 111m has a region that extends beyond the edge of the substrate 120, and can be electrically connected to an FPC or the like via this region.

[0194] Figure 7B shows an example of a connection part 140, in which an insulating layer 127 is provided compared to the configuration in Figure 7A.

[0195] An insulating layer 127 is formed on the insulating layer 103m through the same process as the insulating layer 127 of the pixel portion 104. An opening is formed in the insulating layer 127 to expose the conductive layer 111m.

[0196] The conductive layer 115 is formed on the insulating layer 127 and insulating layer 103m through the same process as the conductive layer 115 of the pixel portion 104. The conductive layer 115 can be electrically connected to the conductive layer 111m through the openings in the insulating layer 103m and the insulating layer 127.

[0197] Figure 7C shows an example of a connection section 140, which includes a sacrificial layer 118 in addition to the configuration shown in Figure 7B.

[0198] A sacrificial layer 118 is formed on the insulating layer 103m through the same process as the sacrificial layer 118 of the pixel portion 104. An insulating layer 127 is formed on the sacrificial layer 118. Openings are formed in the sacrificial layer 118 and the insulating layer 127, exposing the conductive layer 111m. The conductive layer 115 can be electrically connected to the conductive layer 111m through the openings in the insulating layer 103m, the openings in the sacrificial layer 118, and the openings in the insulating layer 127.

[0199] In this way, the connection portion 140 can be formed simultaneously with the pixel portion 104.

[0200] <Manufacturing Method 1> Figure 8A shows a manufacturing method 1 for a display device according to one aspect of the present invention.

[0201] As shown in Figure 8A, the display device 100 has conductive layers 111a, 111b, and 111c on layer 102, and a conductive layer 111m on the connection portion 140.

[0202] The conductive layer 111 can be made of metals, alloys, electrically conductive compounds, and mixtures thereof as appropriate. Specifically, examples include indium tin oxide (In-Sn oxide, also called ITO), In-Si-Sn oxide (also called ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, aluminum-containing alloys such as aluminum, nickel, and lanthanum alloys (Al-Ni-La), and silver, palladium, and copper alloys (Ag-Pd-Cu, also written as APC). In addition, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used. Furthermore, it is preferable to use elements belonging to Group 1 or Group 2 of the periodic table that are not exemplified above (for example, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing these in appropriate combinations. For example, an alloy of silver and magnesium (sometimes written as MgAg) or an alloy of lithium and aluminum (sometimes written as AlLi) can be used. Furthermore, graphene and the like can be used.

[0203] Based on the above, it is preferable to form a conductive layer using a laminated structure consisting of a titanium layer (referred to as the titanium layer), an aluminum layer above it (the aluminum layer), another titanium layer above that, and an ITSO layer above that (the ITSO layer). At least the ITSO layer functions as a transparent electrode, and the titanium layer functions as a reflective electrode.

[0204] After forming a continuous conductive layer having the above-described laminated structure on layer 102, it is processed to obtain conductive layers 111a, 111b, 111c, and 111m. During this processing, recesses may be formed in layer 102 (the recesses are not shown in Figure 8A). If a layer having an inorganic material, such as a layer having silicon nitride or a layer having silicon oxide, is placed on the outermost surface of layer 102, the formation of recesses is suppressed, or if they are formed, they will be shallow recesses. Layer 102 may also have a laminated structure, for example, a layer having silicon nitride and a layer having silicon oxide placed on top of it.

[0205] The conductive layer 111 can be processed using either wet etching or dry etching. For wet etching, it is preferable to use an oxalic acid-based aqueous solution adjusted to a temperature of 20°C to 50°C. For dry etching, the substrate temperature should be kept between 30°C and 70°C, and a gas containing CH4 and Ar, a gas containing H2 and Ar, or a gas containing O2 should be used.

[0206] When the conductive layer 111 is made into a laminated structure, it is preferable to process it by combining wet etching and dry etching.

[0207] The conductive layer 111 has a region formed in a contact hole for electrical connection with the transistor. In this region, the surface of the conductive layer 111 may have a recess in line with the shape of the contact hole.

[0208] The recesses in the conductive layer 111 may be filled with an insulating layer or a conductive layer. When the recesses in the conductive layer 111 are flattened, the unevenness of the surface on which the organic compound layer 113 is formed can be reduced, and the coverage can be improved.

[0209] An insulating layer 103 is formed on the conductive layer 111c of the pixel portion 104, and an insulating layer 103m is formed on the conductive layer 111m of the connection portion 140. As mentioned before, the insulating layer 103 can be made of an inorganic or organic material, and may have a single-layer or multi-layer structure.

[0210] In Figure 8A, insulating layers 103 and 103m having an inorganic material are formed, with a film thickness of 10 nm to 200 nm, preferably 10 nm to 100 nm, and more preferably 10 nm to 60 nm. The inorganic material of insulating layers 103 and 103m may contain one or more of the following: aluminum oxide, magnesium oxide, silicon oxide, silicon oxide nitride, silicon oxide nitride, silicon nitride, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, and tantalum oxide.

[0211] As shown in Figure 8B, in order to obtain the organic compound layer 113a, a red-emitting organic compound layer 113A is formed over the entire pixel portion 104. The organic compound layer 113A is not formed over the connection portion 140. For example, a metal mask (sometimes referred to as a rough metal mask) having an opening in the region corresponding to the pixel portion 104 may be used, and the organic compound layer 113A may be deposited by vacuum deposition with at least the connection portion 140 covered by the rough metal mask.

[0212] The organic compound layer 113A may form a laminate having at least a hole injection layer, a hole transport layer, an electron blocking layer, a red light emitting layer, a first electron transport layer, and a second electron transport layer, in that order from the conductive layer 111. Although the electron injection layer is one of the organic compound layers, the electron injection layer is a common layer. Therefore, the electron injection layer is formed later.

[0213] The second electron transport layer is a layer that is exposed to the processing process for obtaining the processed organic compound layer 113a. Therefore, it is preferable to use a material with high heat resistance for the second electron transport layer. As a material with high heat resistance, for example, a material with a glass transition temperature of 110°C to 165°C is preferable.

[0214] In addition to the second electron transport layer, the first electron transport layer should also be made of a material with high heat resistance. As a material with high heat resistance, for example, a material with a glass transition temperature of 110°C to 165°C should be used. Since the first electron transport layer is covered by the second electron transport layer, the first electron transport layer may be made of a material with a lower glass transition temperature than the material of the second electron transport layer.

[0215] A sacrificial layer 118A is formed on the organic compound layer 113A. In this embodiment, since the sacrificial layers have a laminated structure, a sacrificial layer 119A is formed on the sacrificial layer 118A. Sacrificial layers 118A and 119A are also formed on the connecting portion 140.

[0216] One or both of the sacrificial layers 118A and 119A are made of materials that have high resistance to the processing conditions of the organic compound layer 113A, and furthermore, materials that have a high selectivity ratio for etching with the organic compound layer 113A.

[0217] For example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum deposition can be used as methods for forming one or both of the sacrificial layer 118A and the sacrificial layer 119A. It is preferable that the sacrificial layer 118A, which is formed in contact with the organic compound layer 113A, is formed using a method that causes less damage to the organic compound layer 113A than the sacrificial layer 119A. For example, it is preferable to form the sacrificial layer 118A using the ALD or vacuum deposition method rather than the sputtering method.

[0218] Furthermore, one or both of the sacrificial layer 118A and the sacrificial layer 119A may be formed at a temperature lower than the heat resistance temperature of the organic compound layer 113A. The substrate temperature when forming one or both of the sacrificial layer 118A and the sacrificial layer 119A is typically 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, more preferably 100°C or lower, and even more preferably 80°C or lower.

[0219] It is preferable to use a material that can be removed by wet etching as one or both of the sacrificial layers 118A and 119A. By using wet etching, the damage to the organic compound layer 113A during processing of the sacrificial layers 118A and 119A can be reduced compared to when using dry etching.

[0220] Furthermore, it is preferable to use a film for the sacrificial layer 118A that has a high etching selectivity ratio with respect to the sacrificial layer 119A.

[0221] In this embodiment, an example is shown in which the sacrificial layer is formed with a two-layer structure consisting of sacrificial layer 118A and sacrificial layer 119A, but the sacrificial layer may be a single-layer structure or a laminated structure of three or more layers.

[0222] For example, one or both of the sacrificial layers 118A and 119A can be inorganic films such as metal films, alloy films, metal oxide films, semiconductor films, or inorganic insulating films.

[0223] For one or both of the sacrificial layers 118A and 119A, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metallic materials, can be used. In particular, it is preferable to use low-melting-point materials such as aluminum or silver. It is preferable to use a metallic material capable of shielding ultraviolet light for one or both of the sacrificial layers 118A and 119A, as this can suppress irradiation of the organic compound layer 113A with ultraviolet light and suppress the degradation of the organic compound layer 113A.

[0224] Furthermore, metal oxides such as In-Ga-Zn oxide can be used as one or both of the sacrificial layer 118A and the sacrificial layer 119A. For example, an In-Ga-Zn oxide film can be formed as one or both of the sacrificial layer 118A and the sacrificial layer 119A using a sputtering method. In addition, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), etc. can be used. Alternatively, indium tin oxide containing silicon can also be used.

[0225] In addition, element M (where M is one or more selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) may be used instead of gallium. In particular, it is preferable that M be one or more selected from gallium, aluminum, or yttrium.

[0226] Furthermore, an inorganic insulating film can be used as one or both of the sacrificial layer 118A and the sacrificial layer 119A. For example, inorganic materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used as one or both of the sacrificial layer 118A and the sacrificial layer 119A, respectively. Among the inorganic insulating films, an oxide insulating film is preferable because it has higher adhesion to the organic compound layer 113A than a nitride insulating film; therefore, it is preferable to apply an oxide insulating film to the sacrificial layer 118A. For example, an aluminum oxide film produced by the ALD method can be used as one or both of the sacrificial layer 118A and the sacrificial layer 119A. Using the ALD method is preferable because it can reduce damage to the organic compound layer 113A.

[0227] For example, an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method can be used as the sacrificial layer 118A, and an inorganic film (e.g., an In-Ga-Zn oxide film, an aluminum film, or a tungsten film) formed using the sputtering method can be used as the sacrificial layer 119A. When a tungsten film is used for the sacrificial layer 119A and an aluminum oxide film is used for the sacrificial layer 118A, the tungsten film can be used as a hard mask, and the aluminum oxide film can be processed using this hard mask. Furthermore, it is preferable that the film thickness of the sacrificial layer 119A having the tungsten film is thicker than the film thickness of the sacrificial layer 118 having the aluminum oxide film.

[0228] As either or both of the sacrificial layer 118A and sacrificial layer 119A, a material that is soluble in a chemically stable solvent may be used for at least the film located on the outermost surface of the organic compound layer 113A. In particular, a material soluble in water or alcohol can be preferably used. When forming such a film, it is preferable to apply the material by a wet film formation method while it is dissolved in a solvent such as water or alcohol, and then perform a heat treatment to evaporate the solvent. At this time, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the organic compound layer 113A.

[0229] Sacrificial layer 118A and sacrificial layer 119A, or both, may be formed using a wet film deposition method such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0230] For one or both of the sacrificial layers 118A and 119A, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used.

[0231] As shown in Figure 8C, a mask 176 is formed on the sacrificial layer 119A and a mask 175 is formed on the connection portion 140. Masks 175 and 176 can be formed by applying a photosensitive resin (photoresist), exposing it to light, and developing it. Masks 175 and 176 may be made using either a positive-type resist material or a negative-type resist material.

[0232] The mask 176 is placed in the region that will become the light-emitting device 130a, for example, in a position that overlaps with the conductive layer 111a. The mask 176 should cover the region beyond the edge of the conductive layer 111a.

[0233] As shown in Figure 9A, the sacrificial layer 119A is etched using the mask 176 to form the processed sacrificial layer 119a. When etching the sacrificial layer 119A, it is preferable to use etching conditions with a high selectivity ratio so that the sacrificial layer 118A is not removed by the etching. Also, when etching the sacrificial layer 119A, the sacrificial layer 118A is located on the outermost surface and the organic compound layer 113A is not exposed, so the range of etching conditions for the sacrificial layer 119A is wider than that for the sacrificial layer 118A. Although the organic compound layer 113A may deteriorate if exposed to oxygen gas, an oxygen-containing gas can be used when etching the sacrificial layer 119A.

[0234] As shown in Figure 9B, masks 175 and 176 are removed. For example, masks 175 and 176 can be removed by ashing using oxygen plasma. Alternatively, oxygen gas and a noble gas such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He may be used. Alternatively, masks 175 and 176 may be removed by wet etching. In this case, since the sacrificial layer 118A is located on the outermost surface and the organic compound layer 113A is not exposed, oxygen plasma can be used to remove masks 175 and 176. Because the sacrificial layer 118A is located on the outermost surface, damage to the organic compound layer 113A during the mask removal process can be suppressed. In addition, the range of mask removal methods can be broadened.

[0235] Next, the processed sacrificial layer 119a is used as a mask (also called a hard mask) to remove a portion of the sacrificial layer 118A and form the sacrificial layer 118a.

[0236] The etching conditions for sacrificial layers 118A and 119A will now be described. Either or both of sacrificial layers 118A and 119A can be processed by wet etching or dry etching. It is preferable to perform anisotropic etching on either or both of sacrificial layers 118A and 119A.

[0237] By using the wet etching method, damage to the organic compound layer 113A during processing of one or both of the sacrificial layers 118A and 119A can be reduced compared to using the dry etching method. When using the wet etching method, it is preferable to use chemical solutions such as a developer, aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0238] Furthermore, when using the dry etching method, the degradation of the organic compound layer 113A can be suppressed by not using an oxygen-containing gas as the etching gas. When using the dry etching method, it is preferable to use a gas containing a noble gas such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He as the etching gas. However, when etching the sacrificial layer 119A, the sacrificial layer 118A is located on the outermost surface and the organic compound layer 113A is not exposed, so the sacrificial layer 119A can be etched using an oxygen-containing gas.

[0239] For example, when an aluminum oxide film formed using the ALD method is used as the sacrificial layer 118A, the sacrificial layer 118A can be etched by dry etching using CHF3 and He. Also, when an In-Ga-Zn oxide film formed using the sputtering method is used as the sacrificial layer 119A, the sacrificial layer 119A can be etched by wet etching using diluted phosphoric acid. Alternatively, it may be etched by dry etching using CH4 and Ar. Alternatively, the sacrificial layer 119A can be etched by wet etching using diluted phosphoric acid. Furthermore, when a tungsten film formed using the sputtering method is used as the sacrificial layer 119A, the sacrificial layer 119A can be etched by dry etching using SF6, CF4 and O2, or CF4, Cl2 and O2.

[0240] As shown in Figure 9C, the organic compound layer 113A is processed to form the organic compound layer 113a. For example, sacrificial layers 119a and 118a are used as a hard mask to remove a portion of the organic compound layer 113A and form the organic compound layer 113a. A second electron transport layer with high heat resistance is preferably located on the outermost surface of the organic compound layer 113A. A first electron transport layer with high heat resistance is even better located below the second electron transport layer with high heat resistance.

[0241] The organic compound layer 113A is preferably processed by anisotropic etching. In particular, anisotropic dry etching is preferred. Alternatively, wet etching may be used.

[0242] When using the dry etching method, the degradation of the organic compound layer 113A can be suppressed by not using an oxygen-containing gas as the etching gas.

[0243] Further, a gas containing oxygen may be used as the etching gas. When the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low-power conditions while maintaining a sufficient etching rate. Accordingly, damage to the organic compound layer 113A can be suppressed. Furthermore, problems such as adhesion of reaction products generated during etching can be suppressed.

[0244] When a dry etching method is used, it is preferable to use, as the etching gas, a gas containing one or more selected from, for example, H2, CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, a rare gas (He or Ar), and the like. For example, a gas containing H2 and Ar, or a gas containing CF4 and He can be used as the etching gas. Alternatively, it is preferable to use a gas containing the selected gas and oxygen as the etching gas. For example, a gas containing CF4, He, and oxygen can be used as the etching gas. Still alternatively, only oxygen gas may be used as the etching gas.

[0245] As described above, in one embodiment of the present invention, a mask 176 is formed on a sacrificial layer 119A, and a part of the sacrificial layer 119A is removed using the mask 176, thereby forming a sacrificial layer 119a. Thereafter, the sacrificial layer 119a is used as a hard mask, and a part of the organic compound layer 113A is removed, thereby forming an organic compound layer 113a. In this manner, the organic compound layer 113A can be processed by photolithography to obtain the organic compound layer 113a.

[0246] Note that in addition to the sacrificial layer 119A, the sacrificial layer 118B and the organic compound layer 113A may be etched using the mask 176. After that, the mask 176 may be removed.

[0247] As shown in FIG. 10A, an organic compound layer 113B, a sacrificial layer 118B, and a sacrificial layer 119B are formed. It is preferable that the formation surface of the organic compound layer 113B be hydrophobic. Therefore, a hydrophobic treatment may be performed. For example, the hydrophobic treatment can be performed by plasma treatment using CF4 gas.

[0248] Before forming the organic compound layer 113B, it is preferable to perform heat treatment in vacuum at 70°C or higher and 90°C or lower for 15 minutes or more and 60 minutes or less. This enables removal of surface adsorbed water and the like on the formation surface of the organic compound layer 113B.

[0249] The film thickness of the organic compound layer 113B is different from the film thickness of the organic compound layer 113A. For example, the film thickness of the organic compound layer 113B is thinner than the film thickness of the organic compound layer 113A. This is to provide a microcavity structure.

[0250] As shown in FIG. 10B, etching is performed in accordance with the procedure shown in FIGS. 8C to 9C to form a processed organic compound layer 113b, a processed sacrificial layer 118b, and a processed sacrificial layer 119b.

[0251] As shown in FIG. 10C, an organic compound layer 113C, a sacrificial layer 118C, and a sacrificial layer 119C are formed. It is preferable that the formation surface of the organic compound layer 113C be hydrophobic. Therefore, a hydrophobic treatment may be performed. For example, the hydrophobic treatment can be performed by plasma treatment using CF4 gas.

[0252] Before forming the organic compound layer 113C, it is preferable to perform heat treatment in vacuum at 70°C or higher and 90°C or lower for 15 minutes or more and 60 minutes or less. This enables removal of surface adsorbed water on the formation surface of the organic compound layer 113C.

[0253] The film thickness of the organic compound layer 113C is different from the film thickness of the organic compound layer 113A and the film thickness of the organic compound layer 113B. For example, the film thickness of the organic compound layer 113C is thinner than the film thickness of the organic compound layer 113A and the film thickness of the organic compound layer 113B. This is to provide a microcavity structure.

[0254] As shown in Figure 11A, etching is performed according to the procedure shown in Figures 8C to 9C to form the processed organic compound layer 113c, sacrificial layer 118c, and sacrificial layer 119c. Subsequently, sacrificial layer 119a, sacrificial layer 119b, sacrificial layer 119c, and the sacrificial layer 119 of the connection portion 140 are removed.

[0255] As shown in Figure 11B, an insulating layer 125A, which will later become the insulating layer 125, is formed to cover the organic compound layer 113 and the sacrificial layer 118. An insulating layer 125A is also formed at the connection portion 140.

[0256] As the insulating layer 125A, it is preferable to form an insulating film with a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 180 nm or less, 160 nm or less, 150 nm or less, or 50 nm or less, under conditions where the substrate temperature is 60 °C or higher, 80 °C or higher, 100 °C or higher, or 120 °C or higher and 200 °C or lower and 180 °C or lower and 160 °C or lower.

[0257] For the insulating layer 125A, it is preferable to form an aluminum oxide film using, for example, the ALD method.

[0258] Next, an insulating layer 127 is formed on the insulating layer 125A. The insulating layer 127 is not formed on the connection portion 140. A photosensitive material can be used as the insulating layer 127; for example, a photosensitive resin can be used. It is preferable to dilute the starting material of the photosensitive material with a diluent to 2 to 10 times, preferably 2 to 4 times. If the undiluted starting material is used, the film thickness of the insulating layer 127 will be 0.8 μm to 1.2 μm. If the starting material diluted 2 times with the diluent is used, the film thickness of the insulating layer 127 will be 0.4 μm to 0.6 μm. If the starting material diluted 3 times with the diluent is used, the film thickness of the insulating layer 127 will be 0.5 μm to 0.7 μm. By using a diluted starting material, the film thickness can be reduced, and the amount of degassing released from the insulating layer 127 can be suppressed. The viscosity of the starting material that allows for a smaller film thickness is 3 cP to 10 cP, preferably 5 cP to 7 cP.

[0259] The insulating layer 127 can be formed using wet film deposition methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating. In particular, it is preferable to form the organic insulating film that will become the insulating layer 127 by spin coating.

[0260] After forming the insulating layer 127, it is preferable to perform a heat treatment in air at a temperature of 85°C to 120°C for 45 minutes to 100 minutes. This allows for dehydration or degassing from the insulating layer 127.

[0261] It is preferable that the insulating layer 125A and insulating layer 127 be formed using a method that minimizes damage to the organic compound layer 113. In particular, since insulating layer 125A is formed in contact with the side surface of the organic compound layer 113, it is preferable that it be formed using a method that minimizes damage to the organic compound layer 113 more than insulating layer 127. Furthermore, insulating layer 125A and insulating layer 127 are each formed at a temperature lower than the heat resistance temperature of the organic compound layer 113. Typical substrate temperatures when forming insulating layer 125A and insulating layer 127 are 200°C or lower, preferably 180°C or lower, more preferably 160°C or lower, more preferably 150°C or lower, and more preferably 140°C or lower. For example, an aluminum oxide film can be formed as insulating layer 125A using the ALD method. The ALD method is preferable because it can minimize film formation damage and allow for the formation of a film with high coverage.

[0262] When a photosensitive material is used as the insulating layer 127, the processed insulating layer 127 can be formed by exposure and development. The surface of the processed insulating layer 127 may have an uneven shape. Etching may be performed to adjust the surface height of the processed insulating layer 127. The surface height of the insulating layer 127 can be adjusted by processing it with oxygen plasma ashing.

[0263] As shown in FIG. 11C, at least a portion of the insulating layer 125A is removed to form the insulating layer 125. A portion of the insulating layer 125A can be removed using the insulating layer 127 as a mask. Thereafter, the sacrificial layer 118 is removed. It is preferable to select layers having the same material for the insulating layer 125A and the sacrificial layer 118. This simplifies the removal step shown in this figure. For example, the insulating layer 125A and the sacrificial layer 118 are preferably formed of a film containing aluminum oxide.

[0264] Through this removal step, at least a portion of the top surface of the organic compound layer 113 and at least a portion of the top surface of the conductive layer 111m of the connection portion 140 are exposed.

[0265] The insulating layer 125A is preferably processed by a dry etching method. Processing of the insulating layer 125A is preferably performed by anisotropic etching. The insulating layer 125A can be processed using an etching gas that can be used when processing a sacrificial layer.

[0266] The removal of the sacrificial layer 118 preferably uses a wet etching method. This makes it possible to reduce damage applied to the organic compound layer 113 when removing the sacrificial layer, compared to a case where the sacrificial layer is removed using, for example, a dry etching method.

[0267] The sacrificial layer 118 may be removed by dissolving it in a solvent such as water or alcohol. Examples of the alcohol include ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), and glycerin.

[0268] When layers having the same material are used for the insulating layer 125A and the sacrificial layer 118, the same etching conditions can also be selected.

[0269] After removing the sacrificial layer 118, a drying treatment may be performed to remove water contained in the organic compound layer 113 and water adsorbed on the surface of the organic compound layer. For example, a heat treatment can be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 60°C to 150°C, more preferably 70°C to 120°C. A reduced pressure atmosphere is preferable because it allows drying at a lower temperature.

[0270] As shown in Figure 12A, electron injection layers 114 are formed on the insulating layer 125, the insulating layer 127, the organic compound layer 113, and the conductive layer 111m of the connection portion 140. The electron injection layer 114 is one of the common layers. The electron injection layer 114 can be formed by methods such as vacuum deposition, transfer, printing, inkjet, and coating.

[0271] Before forming the electron injection layer 114, it is preferable to perform a heat treatment in a vacuum at a temperature of 70°C to 90°C for 45 minutes to 120 minutes. This can remove surface adsorbed water from the surface of the electron injection layer 114.

[0272] As shown in Figure 12B, a conductive layer 115 is formed on the electron injection layer 114. For example, sputtering or vacuum deposition can be used to form the conductive layer 115. Alternatively, a film formed by deposition and a film formed by sputtering may be laminated together.

[0273] Of the conductive layers 111 and 115, the electrode that extracts light preferably uses a conductive film that transmits visible light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode that does not extract light.

[0274] As materials for forming the pair of electrodes (conductive layer 111 and conductive layer 115) of the light-emitting device, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, examples include indium tin oxide (In-Sn oxide, also called ITO), In-Si-Sn oxide (also called ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, aluminum-containing alloys such as aluminum, nickel, and lanthanum alloys (Al-Ni-La), and silver, palladium, and copper alloys (Ag-Pd-Cu, also written as APC). In addition, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used. Furthermore, elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (for example, lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing these in appropriate combinations, graphene, and the like can also be used.

[0275] A microcavity structure is applied to the light-emitting device. Therefore, it is preferable that one of the pair of electrodes in the light-emitting device has an electrode that is both transparent and reflective to visible light (a semi-transmissive / semi-reflective electrode), and the other electrode has an electrode that is reflective to visible light (a reflective electrode).

[0276] Furthermore, semi-transmissive / semi-reflective electrodes can have a laminated structure consisting of a reflective electrode and an electrode that transmits visible light (also called a transparent electrode).

[0277] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode in the light-emitting device that has a transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm). The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 A value of Ωcm or less is preferable.

[0278] Subsequently, a protective layer 131 is formed on the conductive layer 115. The reliability of the light-emitting device can be improved by providing the protective layer 131. The protective layer 131 may be a single layer or a multilayer structure of two or more layers. Methods for forming the protective layer 131 include vacuum deposition, sputtering, CVD, and ALD. Furthermore, the protective layer 131 may be a single layer or a multilayer structure.

[0279] The conductivity of the protective layer 131 is not required. The protective layer 131 can be at least one of an insulating film, a semiconductor film, and a conductive film.

[0280] The presence of an inorganic material in the protective layer 131 prevents oxidation of the conductive layer 115 and suppresses the intrusion of impurities (such as moisture and oxygen) into the light-emitting device 130, thereby suppressing degradation of the light-emitting device and improving the reliability of the display device.

[0281] For the protective layer 131, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxidative nitride insulating films include silicon oxidative nitride films and aluminum oxidative nitride films. Examples of nitride oxide insulating films include silicon nitride films and aluminum nitride films.

[0282] The protective layer 131 preferably has a nitride insulating film or a nitride oxide insulating film, and more preferably has a nitride insulating film.

[0283] Furthermore, the protective layer 131 may also be an inorganic film containing In-Sn oxide (also known as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also known as IGZO). The inorganic film is preferably highly resistive, and more specifically, it is preferably more resistive than the conductive layer 115. The inorganic film may further contain nitrogen.

[0284] When the light emitted from a light-emitting device is extracted via a protective layer 131, it is preferable that the protective layer 131 has high transmittance to visible light. For example, ITO, IGZO, and aluminum oxide are preferred because they are inorganic materials with high transmittance to visible light.

[0285] As the protective layer 131, for example, a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used. By using such a laminated structure, it is possible to suppress impurities (water, oxygen, etc.) from entering the EL layer.

[0286] Furthermore, the protective layer 131 may have an organic film. For example, the protective layer 131 may have both an organic film and an inorganic film.

[0287] The protective layer 131 may have a two-layer structure formed using different film deposition methods. Specifically, the first layer of the protective layer 131 may be formed using the ALD method, and the second layer of the protective layer 131 may be formed using the sputtering method.

[0288] Furthermore, by using the resin layer 122 to bond the substrate 120 onto the protective layer 131, the display device 100 shown in Figure 6B and other figures can be manufactured.

[0289] As the resin layer 122, various curing adhesives can be used, such as UV-curing type adhesives, reaction-curing type adhesives, thermosetting type adhesives, and anaerobic type adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0290] A light-shielding layer may be provided on the side of the substrate 120 facing the resin layer 122. Various optical components can also be placed on the outside of the substrate 120. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (diffusion films, etc.), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may also be placed on the outside of the substrate 120.

[0291] The substrate 120 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, etc. The substrate on the side that extracts light from the light-emitting device should be made of a material that transmits the light. Using a flexible material for the substrate 120 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as the substrate 120.

[0292] As the substrate 120, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. may be used. Glass with a thickness sufficient to provide flexibility may also be used as the substrate 120.

[0293] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0294] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0295] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0296] Furthermore, when using a film as the substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0297] In this way, the display device 100 can be manufactured.

[0298] <Preparation Method 2> Figure 13A shows a manufacturing method 2 for a display device according to one embodiment of the present invention.

[0299] As shown in Figure 13A, conductive layers 111a, 111b, and 111c are formed on layer 102, and a conductive layer 111m is formed on the connecting portion 140, using the same process as in Figure 8A.

[0300] An insulating layer 103o is formed on the conductive layer 111c. As mentioned before, the insulating layer 103o can be made of an inorganic or organic material and may have a single-layer or multi-layer structure.

[0301] In Figure 13A, an insulating layer 103o having an organic material is formed on the pixel portion 104 and the connection portion 140, with a film thickness of 0.1 μm or more and 1 μm or less, preferably 0.1 μm or more and 0.5 μm or less. The organic material of the insulating layer 103o may be an organic resin such as polyimide resin, polyamide resin, acrylic resin, siloxane resin, silicone resin, epoxy resin, or phenolic resin.

[0302] As shown in Figure 13B, in fabrication method 2, the organic compound layer of the light-emitting device 130c is formed first. This is to prevent unintended processing of the insulating layer 103o. For example, the organic compound layer 113C, sacrificial layer 118C, and sacrificial layer 119C are formed using the same process as in Figure 10C.

[0303] A mask 176 is formed on the sacrificial layer 119C, and a mask 175 is also formed on the sacrificial layer 119C at the connection portion 140.

[0304] As shown in Figure 13C, the sacrificial layer 119C is processed using a mask 176 in the same process as in Figures 8C to 9C to form the sacrificial layer 119c. Then, masks 175 and 176 are removed. Next, using the sacrificial layer 119c as a hard mask, the sacrificial layer 118C is processed to form the sacrificial layer 118c, and the organic compound layer 113C is processed to form the organic compound layer 113c. At this time, care is taken to prevent the insulating layer 103o from being exposed to etching gas, etc. That is, the insulating layer 103o is kept covered by at least the sacrificial layer 119C or the sacrificial layer 118C. In this way, unintended processing of the insulating layer 103o can be prevented.

[0305] As shown in Figure 14A, the organic compound layer 113B, sacrificial layer 118B, and sacrificial layer 119B are formed using the same process as in Figure 10A. Sacrificial layers 118B and 119B are also formed in the connection portion 140. A mask 176 is provided so as to overlap with the area where the light-emitting device 130b is formed. No mask is provided in the connection portion 140.

[0306] As shown in Figure 14B, using the same process as in Figures 8C to 9C, the sacrificial layer 119B is processed using the mask 176 to form the sacrificial layer 119b. The sacrificial layer 119B is also removed at the connection portion 140. After that, the mask 176 is removed. Next, using the sacrificial layer 119b as a hard mask, the sacrificial layer 118B is processed to form the sacrificial layer 118b, and the organic compound layer 113B is processed to form the organic compound layer 113b. At the connection portion 140, the sacrificial layer 118B is also removed, and the sacrificial layer 119c is exposed.

[0307] As shown in Figure 15A, the organic compound layer 113A, sacrificial layer 118A, and sacrificial layer 119A are formed using the same process as in Figure 8B. Sacrificial layers 118A and 119A are also formed at the connection portion 140. A mask 176 is provided so as to overlap with the area where the light-emitting device 130a is formed. No mask is provided at the connection portion 140.

[0308] As shown in Figure 15B, using the same process as in Figures 8C to 9C, the sacrificial layer 119A is processed using the mask 176 to form the sacrificial layer 119a. The sacrificial layer 119A is also removed at the connection portion 140. After that, the mask 176 is removed. Next, using the sacrificial layer 119a as a hard mask, the sacrificial layer 118A is processed to form the sacrificial layer 118a, and the organic compound layer 113A is processed to form the organic compound layer 113a. At the connection portion 140, the sacrificial layer 118A is also removed, and the sacrificial layer 119c is exposed.

[0309] As shown in Figure 16A, after removing sacrificial layers 119a, 119b, and 119c using the same process as in Figures 11B and 11C, insulating layers 125 and 127 are formed. The insulating layer 127 is preferably formed in a region that does not overlap with the insulating layer 103o when viewed from above. In Figure 16A, the boundary between the insulating layer 127 and the insulating layer 103o can be seen in the region indicated by the arrow and its vicinity. For example, a light-emitting device 130c having an insulating layer 103o will have a configuration without an insulating layer 127. Therefore, the light-emitting device 130c is preferable because it is less affected by defects in the insulating layer 127. Furthermore, since the edges of the organic compound layer 113c are covered with the insulating layer 125, degradation can be suppressed.

[0310] As shown in Figure 16B, an electron injection layer 114 is formed using the same process as in Figures 12A and 12B, and a conductive layer 115 is formed on the electron injection layer. An electron injection layer and a conductive layer 115 are also formed at the connection portion 140. The connection portion 140 is sometimes referred to as the conductive layer 115m. A protective layer 131 is formed on the conductive layer 115 and the conductive layer 115m.

[0311] As shown in Figure 17, the protective layer 131 and the substrate 120 are bonded together using the resin layer 122, using the same process as in Figure 12B.

[0312] In this way, the display device 100 can be manufactured.

[0313] [Pixel layout] Next, we will describe a pixel layout different from Figure 6A. There are no particular limitations on the arrangement of subpixels, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0314] Furthermore, the top surface shape of a sub-pixel can be, for example, a triangle, a quadrilateral (including rectangles and squares), a pentagon, or other polygons, or a polygon with rounded corners, an ellipse, or a circle. Here, the top surface shape of a sub-pixel corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0315] The pixel 110 shown in Figure 18A has an S-stripe array applied to it. The pixel 110 shown in Figure 18A is composed of three subpixels: subpixel 110a, subpixel 110b, and subpixel 110c. For example, subpixel 110b is located next to subpixel 110a, and subpixel 110c is located next to 110b. For example, subpixel 110a may be a blue subpixel B, subpixel 110b may be a red subpixel R, and subpixel 110c may be a green subpixel G. An insulating layer 103 is shown at subpixel 110c. An insulating layer 103 may be provided in places other than subpixel 110c. The insulating layer 103 can be read as insulating layer 103o.

[0316] The pixel 110 shown in Figure 18B includes a sub-pixel 110a with a roughly trapezoidal top surface shape with rounded corners, a sub-pixel 110b with a roughly triangular top surface shape with rounded corners, and a sub-pixel 110c with a roughly square or roughly hexagonal top surface shape with rounded corners. For example, sub-pixel 110b is located next to sub-pixel 110a, and sub-pixel 110c is located next to 110b. Also, sub-pixel 110a has a larger light-emitting area than sub-pixel 110b. In this way, the shape and size of each sub-pixel can be determined independently. For example, the size of a sub-pixel can be reduced to a level that provides a more reliable light-emitting device. For example, sub-pixel 110a may be a green sub-pixel G, sub-pixel 110b may be a red sub-pixel R, and sub-pixel 110c may be a blue sub-pixel B. An insulating layer 103 is shown in sub-pixel 110c. An insulating layer 103 may be provided in sub-pixels other than sub-pixel 110c. The insulating layer 103 can be read as insulating layer 103o.

[0317] The pixels 124a and 124b shown in Figure 18C utilize a Pentile arrangement. Figure 18C shows an example where pixels 124a having sub-pixels 110a and 110b, and pixels 124b having sub-pixels 110b and 110c, are arranged alternately. For example, sub-pixel 110b is located next to sub-pixel 110a, and sub-pixel 110c is located next to 110b. For example, sub-pixel 110a may be a red sub-pixel R, sub-pixel 110b may be a green sub-pixel G, and sub-pixel 110c may be a blue sub-pixel B. An insulating layer 103 is shown at sub-pixel 110c. An insulating layer 103 may also be provided at locations other than sub-pixel 110c. The insulating layer 103 can be read as insulating layer 103o.

[0318] Pixels 124a and 124b shown in Figure 18D utilize a delta array. Pixel 124a has two subpixels (subpixels 110a and 110b) in the top row (1st row) and one subpixel (subpixel 110c) in the bottom row (2nd row). For example, subpixel 110b is located next to subpixel 110a, and subpixel 110c is located next to 110b. Pixel 124b has one subpixel (subpixel 110c) in the top row (1st row) and two subpixels (subpixels 110a and 110b) in the bottom row (2nd row). For example, subpixel 110a may be a red subpixel R, subpixel 110b may be a green subpixel G, and subpixel 110c may be a blue subpixel B. An insulating layer 103 is shown at subpixel 110c. In addition to the sub-pixel 110c, an insulating layer 103 may also be provided. The insulating layer 103 can be read as insulating layer 103o.

[0319] Figure 18E shows an example where the subpixels of each color are arranged in a zigzag pattern. Specifically, in a top view, the upper edges of two subpixels arranged in the column direction (for example, subpixel 110a and subpixel 110b, or subpixel 110b and subpixel 110c) are offset. For example, subpixel 110b is located next to subpixel 110a, and subpixel 110c is located next to 110b. For example, subpixel 110a may be a red subpixel R, subpixel 110b may be a green subpixel G, and subpixel 110c may be a blue subpixel B. An insulating layer 103 is shown at subpixel 110c. An insulating layer 103 may be provided at subpixels other than 110c. The insulating layer 103 can be read as insulating layer 103o.

[0320] In photolithography, the finer the pattern being processed, the more significant the effects of light diffraction become. This compromises the fidelity of transferring the photomask pattern through exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, patterns with rounded corners are likely to form. Consequently, the top surface shape of subpixels may be a polygon with rounded corners, an ellipse, or a circle.

[0321] Furthermore, in a method for manufacturing a display device according to one aspect of the present invention, the organic compound layer is processed by lithography. The mask formed on the organic compound layer needs to be cured at a temperature lower than the heat resistance temperature of the organic compound layer. Therefore, depending on the heat resistance temperature of the organic compound layer material and the curing temperature of the mask material, the mask may not be cured sufficiently. A mask that is not sufficiently cured may take a shape that deviates from the desired shape during processing. As a result, the top surface shape of the organic compound layer may become a polygon with rounded corners, an ellipse, or a circle. For example, when attempting to form a resist mask with a square top surface shape, a resist mask with a circular top surface shape may be formed, resulting in a circular top surface shape for the organic compound layer.

[0322] Furthermore, in order to achieve the desired shape of the upper surface of the organic compound layer, a technique (OPC (Optical Proximity Correction) technique) may be used to pre-correct the mask pattern so that the design pattern and the transferred pattern match. Specifically, in the OPC technique, a correction pattern is added to the corners of the shape on the mask pattern.

[0323] As shown in Figures 19A to 19H, a pixel can be configured to have four types of subpixels.

[0324] The pixels 110 shown in Figures 19A to 19C are arranged in a stripe pattern. In Figures 19A to 19C, the insulating layer 103 is shown in the sub-pixel 110c. The insulating layer 103 may also be provided in pixels other than the sub-pixel 110c. The insulating layer 103 can be read as insulating layer 103o.

[0325] Figure 19A shows an example where each subpixel has a rectangular top surface shape, Figure 19B shows an example where each subpixel has a top surface shape formed by connecting two semicircles and a rectangle, and Figure 19C shows an example where each subpixel has an elliptical top surface shape. In Figures 19A to 19C, subpixel 110b is located next to subpixel 110a, subpixel 110c is located next to 110b, and subpixel 110d is located next to subpixel 110c.

[0326] The pixels 110 shown in Figures 19D to 19F utilize a matrix arrangement. In Figures 19D to 19F, an insulating layer 103 is shown in sub-pixel 110c. In Figures 19D to 19F, sub-pixel 110b is located next to sub-pixel 110a, sub-pixel 110c is located next to 110b, and sub-pixel 110d is located next to sub-pixel 110c. An insulating layer 103 may be provided in locations other than sub-pixel 110c. The insulating layer 103 can be read as insulating layer 103o.

[0327] Figure 19D shows an example where each subpixel has a square top surface shape, Figure 19E shows an example where each subpixel has a roughly square top surface shape with rounded corners, and Figure 19F shows an example where each subpixel has a circular top surface shape.

[0328] Figures 19G and 19H show an example where one pixel 110 is composed of 2 rows and 3 columns. In Figures 19G and 19H, sub-pixel 110b is located next to sub-pixel 110a, sub-pixel 110c is located next to 110b, and sub-pixel 110d is located next to sub-pixels 110a, 110b, and 110c. In Figures 19G and 19H, an insulating layer 103 is shown at sub-pixel 110c. An insulating layer 103 may be provided at locations other than sub-pixel 110c. The insulating layer 103 can be read as insulating layer 103o.

[0329] Pixel 110, shown in Figure 19G, has three subpixels (subpixels 110a, 110b, and 110c) in the top row (row 1) and one subpixel (subpixel 110d) in the bottom row (row 2). In other words, pixel 110 has subpixel 110a in the left column (column 1), subpixel 110b in the middle column (column 2), subpixel 110c in the right column (column 3), and subpixel 110d across these three columns.

[0330] The pixel 110 shown in Figure 19H has three subpixels (subpixels 110a, 110b, and 110c) in the top row (1st row) and three subpixels 110d in the bottom row (2nd row). In other words, the pixel 110 has subpixels 110a and 110d in the left column (1st column), subpixels 110b and 110d in the middle column (2nd column), and subpixels 110c and 110d in the right column (3rd column). As shown in Figure 19H, by aligning the arrangement of subpixels in the top row and the bottom row, it becomes possible to efficiently remove dust and other debris that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided.

[0331] The pixel 110 shown in Figures 19A to 19H is composed of four subpixels: subpixels 110a, 110b, 110c, and 110d. Each subpixel 110a, 110b, 110c, and 110d has a light-emitting device that emits light of a different color. Examples include subpixels of four colors: R, G, B, and Y, or subpixels that emit red, green, blue, and infrared light.

[0332] A display device according to one aspect of the present invention may have a light-receiving device in each pixel.

[0333] Of the four subpixels of the pixel 110 shown in Figures 19A to 19H, three may be configured to have light-emitting devices, and the remaining one may be configured to have a light-receiving device.

[0334] For example, a pn-type or pin-type photodiode can be used as the light-receiving device. The light-receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on it and generates an electric charge. The amount of charge generated from the light-receiving device is determined by the amount of light incident on it.

[0335] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound layer as the light-receiving device. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to various display devices.

[0336] In one aspect of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL device.

[0337] The photodetector has an active layer between a pair of electrodes that functions as at least a photoelectric conversion layer. In this specification, one of the pair of electrodes may be referred to as the pixel electrode and the other as the common electrode.

[0338] For example, sub-pixels 110a, 110b, and 110c may be sub-pixels of three colors: R, G, and B, and sub-pixel 110d may be a sub-pixel having a light-receiving device.

[0339] In a photodetector, one electrode functions as the anode and the other as the cathode. The following explanation uses the example where the pixel electrode functions as the anode and the common electrode functions as the cathode. The photodetector can detect incoming light, generate an electric charge, and extract it as an electric current by applying a reverse bias between the pixel electrode and the common electrode. Alternatively, the pixel electrode may function as the cathode and the common electrode as the anode.

[0340] The same manufacturing methods as for light-emitting devices can be applied to light-receiving devices. The photoelectric conversion layer (also called the active layer) of the light-receiving device is not patterned using a metal mask, but rather obtained by first depositing a film that will become the active layer onto one surface and then processing that film. Therefore, the active layer can be formed with a uniform thickness. In addition, by providing a sacrificial layer on the active layer, the damage the active layer receives during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-receiving device.

[0341] Here, the layers commonly included in the light-receiving device and the light-emitting device may have different functions in the light-emitting device and in the light-receiving device. In the present specification, constituent elements may be referred to based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and functions as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and functions as an electron transport layer in the light-receiving device. Furthermore, the layers commonly included in the light-receiving device and the light-emitting device may have the same function in the light-emitting device and in the light-receiving device. The hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and the electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0342] The active layer included in the light-receiving device contains a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon, and organic semiconductors including an organic compound layer. In the present embodiment, an example in which an organic semiconductor is used as the semiconductor of the active layer will be described. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed by the same method (for example, a vacuum deposition method), and manufacturing equipment can be shared.

[0343] Examples of n-type semiconductor materials for the active layer include fullerene (e.g., C 60 , C 70 etc.), electron-accepting organic semiconductor materials such as fullerene derivatives. Fullerene has a shape similar to a soccer ball, and this shape is energetically stable. For fullerene, both the HOMO level and the LUMO level are deep (low). Since fullerene has a deep LUMO level, it has extremely high electron-accepting properties (acceptor properties). Generally, when π-electron conjugation (resonance) spreads over a plane like in benzene, electron-donating properties (donor properties) increase. However, since fullerene has a spherical shape, it exhibits high electron-accepting properties despite the fact that its π-electron conjugation spreads widely. High electron-accepting properties promote efficient charge separation at high speed, which is advantageous for a light-receiving device. C 60 , C 70Both have a broad absorption band in the visible light region, and especially C 70 is C 60 Compared to [another compound], it is preferable because it has a larger π-electron conjugation system and a broad absorption band in the long-wavelength region. Other examples of fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviated as PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviated as PC60BM), and 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviated as ICBA).

[0344] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0345] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0346] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indrocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0347] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0348] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0349] For example, the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0350] The photodetector may further include layers other than the active layer, such as a material with high hole transport properties, a material with high electron transport properties, or a bipolar material (a material with high electron and hole transport properties). Furthermore, it may also further include layers containing a material with high hole injection properties, a hole blocking material, a material with high electron injection properties, an electron blocking material, etc.

[0351] The light-receiving device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-receiving device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0352] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transport materials. In addition, inorganic compounds such as zinc oxide (ZnO) can be used as electron transport materials.

[0353] Furthermore, the active layer can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method of dispersing the acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0354] Furthermore, the active layer may contain a mixture of three or more materials. For example, to broaden the wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0355] In a display device having light-emitting and light-receiving devices in its pixels, the pixels have a light-receiving function, allowing for the detection of contact or proximity of an object while displaying an image. For example, not only can the display device display an image using all of its subpixels, but some subpixels can also emit light as a light source, while the remaining subpixels display an image.

[0356] A display device according to one aspect of the present invention has a display unit in which light-emitting devices are arranged in a matrix, and an image can be displayed on the display unit. Furthermore, light-receiving devices are arranged in a matrix on the display unit, and the display unit has an image display function, as well as one or both of an imaging function and a sensing function. The display unit can be used as an image sensor or a touch sensor. That is, by detecting light on the display unit, an image can be captured, or the proximity or contact of an object (finger, hand, or pen, etc.) can be detected. Moreover, in a display device according to one aspect of the present invention, the light-emitting devices can be used as a light source for a sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced.

[0357] In one embodiment of the present invention, when an object reflects (or scatters) the light emitted by the light-emitting device of the display unit, the light-receiving device can detect the reflected light (or scattered light), thus enabling imaging or touch detection even in dark places.

[0358] When a light-receiving device is used as an image sensor, the display device can capture an image using the light-receiving device. For example, the display device of this embodiment can be used as a scanner.

[0359] For example, an image sensor can be used to acquire data related to biometric information such as fingerprints and palm prints. In other words, a biometric authentication sensor can be built into the display device. By having the biometric authentication sensor built into the display device, the number of components in the electronic device can be reduced compared to when a separate biometric authentication sensor is provided in the display device, making the electronic device smaller and lighter.

[0360] Furthermore, when a light-receiving device is used as a touch sensor, the display device can use the light-receiving device to detect the proximity or contact of an object.

[0361] The pixels shown in Figures 20A and 20B have sub-pixels G, B, R, and PS. An insulating layer 103 can be provided in addition to sub-pixel PS. The insulating layer 103 can be read as insulating layer 103o.

[0362] The pixels shown in Figure 20A have a stripe array applied. The pixels shown in Figure 20B have a matrix array applied.

[0363] The pixels shown in Figures 20C and 20D have sub-pixels G, B, R, PS, and IRS. In addition to sub-pixels PS and IRS, an insulating layer 103 may be provided. The insulating layer 103 can be read as insulating layer 103o.

[0364] Figures 20C and 20D show an example where one pixel is arranged across two rows and three columns. The top row (first row) has three subpixels (subpixel G, subpixel B, and subpixel R). In Figure 20C, the bottom row (second row) has three subpixels (one subpixel PS and two subpixels IRS). On the other hand, in Figure 20D, the bottom row (second row) has two subpixels (one subpixel PS and one subpixel IRS). As shown in Figure 20C, by aligning the arrangement of subpixels in the top and bottom rows, it becomes possible to efficiently remove dust and other debris that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided. Note that the layout of subpixels is not limited to the configuration shown in Figures 20A to 20D.

[0365] Sub-pixel R has a light-emitting device that emits red light. Sub-pixel G has a light-emitting device that emits green light. Sub-pixel B has a light-emitting device that emits blue light.

[0366] Sub-pixels PS and IRS each have a light-receiving device. The wavelength of light detected by sub-pixels PS and IRS is not particularly limited.

[0367] In Figure 20C, the two subpixel IRS may each have an independent photodetector, or they may share a single photodetector. In other words, the pixel 110 shown in Figure 20C can be configured to have one photodetector for the subpixel PS and one or two photodetectors for the subpixel IRS.

[0368] The light-receiving area of ​​the sub-pixel PS is smaller than that of the sub-pixel IRS. A smaller light-receiving area results in a narrower imaging range, which suppresses blurring in the image and improves resolution. Therefore, using sub-pixel PS allows for higher-definition or higher-resolution imaging compared to using sub-pixel IRS. For example, sub-pixel PS can be used to capture images for personal authentication using fingerprints, palm prints, irises, pulse patterns (including vein and artery patterns), or faces.

[0369] The light-receiving device in the sub-pixel PS preferably detects visible light, and more preferably detects one or more colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Alternatively, the light-receiving device in the sub-pixel PS may also detect infrared light.

[0370] Furthermore, sub-pixel IRS can be used in touch sensors (also called direct touch sensors) or near-touch sensors (also called hover sensors, hover-touch sensors, non-contact sensors, or touchless sensors), etc. Depending on the application, the wavelength of light detected by the sub-pixel IRS can be appropriately determined. For example, it is preferable for the sub-pixel IRS to detect infrared light. This enables touch detection even in dark places.

[0371] Here, the touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen).

[0372] A touch sensor can detect an object by making direct contact with the display device. A near-touch sensor can detect an object even if the object does not touch the display device. For example, it is preferable that the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the display device without the object directly touching it, in other words, it becomes possible to operate the display device without contact (touchless). With the above configuration, the risk of the display device becoming dirty or scratched can be reduced, or it becomes possible to operate the display device without the object directly touching any dirt (e.g., dust or viruses) attached to the display device.

[0373] Furthermore, a display device according to one aspect of the present invention can have a variable refresh rate. For example, power consumption can be reduced by adjusting the refresh rate according to the content displayed on the display device (for example, adjusting within a range of 1 Hz to 240 Hz). In addition, the drive frequency of the touch sensor or near touch sensor may be changed according to the refresh rate. For example, if the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or near touch sensor can be set to a frequency higher than 120 Hz (typically 240 Hz). This configuration makes it possible to achieve low power consumption and to increase the response speed of the touch sensor or near touch sensor.

[0374] The display device 100 shown in Figures 20E to 20G has a layer 353 having a light-receiving device, a functional layer 355, and a layer 357 having a light-emitting device between substrates 351 and 359.

[0375] The functional layer 355 includes circuits for driving a light-receiving device and circuits for driving a light-emitting device. The functional layer 355 may be provided with switches, transistors, capacitors, resistors, wiring, terminals, etc. However, when the light-emitting and light-receiving devices are driven using a passive matrix system, the configuration may omit switches and transistors.

[0376] For example, as shown in Figure 20E, in layer 357 which has a light-emitting device, the light emitted by the light-emitting device is reflected by a finger 352 that is in contact with the display device 100, and the light-receiving device in layer 353 which has a light-receiving device detects the reflected light. This makes it possible to detect that the finger 352 has come into contact with the display device 100. Alternatively, as shown in Figures 20F and 20G, the device may have a function to detect or image objects that are close to (but not in contact with) the display device. Figure 20F shows an example of detecting a person's finger, and Figure 20G shows an example of detecting information around, on the surface of, or inside a person's eye (number of blinks, eyeball movements, eyelid movements, etc.).

[0377] By equipping a single pixel with two types of light-receiving devices, it becomes possible to add two additional functions to the display function, thus enabling the multi-functionality of the display device.

[0378] Furthermore, in order to perform high-resolution imaging, it is preferable that sub-pixels PS be provided on all pixels of the display device. On the other hand, sub-pixels IRS used in touch sensors or near-touch sensors, etc., do not require the same high detection accuracy as sub-pixels PS, so it is sufficient to provide them on only some of the pixels of the display device. By reducing the number of sub-pixels IRS in the display device to fewer than the number of sub-pixels PS, the detection speed can be increased.

[0379] As described above, one embodiment of the present invention enables the multi-functionalization of a display device by equipping a single pixel with two types of light-receiving devices, thereby adding two additional functions to the display function. For example, it can realize a high-definition imaging function and a sensing function such as a touch sensor or near-touch sensor. Furthermore, the functionality of the display device can be further increased by combining a pixel equipped with two types of light-receiving devices with a pixel with a different configuration. For example, a pixel having an infrared light-emitting device or various sensor devices can be used.

[0380] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0381] (Embodiment 3) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 21 to 25.

[0382] The display device of this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal information terminals, and audio playback devices.

[0383] [Display device 100A] Figure 21 shows a perspective view of the display device 100A, and Figure 22A shows a cross-sectional view of the display device 100A.

[0384] The display device 100A has a configuration in which substrate 120 and substrate 101 are bonded together. In Figure 21, substrate 120 is clearly indicated by a dashed line.

[0385] The display device 100A includes a pixel section 104, a connection section 140, a circuit 164, wiring 165, etc. The wiring 165 is sometimes referred to as routing wiring and refers to the wiring extending from the pixel section 104, the connection section 140, and the circuit 164. Figure 21 shows an example in which IC 173 and FPC 172 are mounted on the display device 100A. Therefore, the configuration shown in Figure 21 can also be described as a display module having the display device 100A, an IC (integrated circuit), and an FPC.

[0386] The connection portion 140 is provided on the outside of the pixel portion 104. The connection portion 140 can be provided along one or more sides of the pixel portion 104. There may be one or more connection portions 140. Figure 21 shows an example in which the connection portion 140 is provided along one side of the pixel portion 104 on the wiring 165 side. At the connection portion 140, the common electrode of the light-emitting device is electrically connected to a conductive layer or the like, and a predetermined potential can be supplied to the common electrode.

[0387] For example, a scan line drive circuit can be used as circuit 164.

[0388] The wiring 165 has the function of supplying signals and power to the pixel unit 104 and the circuit 164, etc. These signals and power are input to the wiring 165 from an external source via the FPC 172 or from the IC 173.

[0389] Figure 21 shows an example in which IC173 is provided using a COG (Chip On Glass) method or COF (Chip on Film) method, etc. IC173 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 100A and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC using a COF method, etc.

[0390] Figure 22A shows an example of a cross-section of the display device 100A when a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the pixel portion 104, a portion of the connection portion 140, and a portion of the area including the end portion are cut. The above configuration example 1 will be used as the display device 100A for explanation, but other configuration examples can be applied.

[0391] The display device 100A shown in Figure 22A includes a transistor 201, a transistor 205, a light-emitting device 130a that emits red light, a light-emitting device 130b that emits green light, and a light-emitting device 130c that emits blue light, etc., between the substrate 101 and the substrate 120.

[0392] Here, if the pixels of the display device have three types of subpixels, each having a light-emitting device that emits a different color from the others, examples of these three subpixels include subpixels of three colors: R, G, and B, and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). If there are four such subpixels, examples of these four subpixels include subpixels of four colors: R, G, B, and Y.

[0393] Light-emitting devices 130a, 130b, and 130c can be referenced from the embodiments described above.

[0394] The light-emitting device 130a has a conductive layer 111a. The conductive layer 111a is sometimes referred to as a pixel electrode. The conductive layer 111a is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214.

[0395] The conductive layer 111b in the light-emitting device 130b and the conductive layer 111c in the light-emitting device 130c are the same as the conductive layer 111a in the light-emitting device 130a. An insulating layer 103 is provided covering a portion of the conductive layer 111c in the light-emitting device 130c. The insulating layer 103 can be read as insulating layer 103o.

[0396] The conductive layers 111a, 111b, and 111c may have recesses formed to cover openings in the insulating layer 214. To provide flatness to the upper surface of the conductive layer 111, the recesses can be filled with an insulating layer or a conductive layer.

[0397] The sides of organic compound layers 113a, 113b, and 113c are covered by insulating layers 125 and 127, respectively. A sacrificial layer 118a is located between organic compound layer 113a and insulating layer 125. A sacrificial layer 118b is located between organic compound layer 113b and insulating layer 125, and a sacrificial layer 118c is located between organic compound layer 113c and insulating layer 125. An electron injection layer 114 is provided on organic compound layers 113a, 113b, and 113c, and insulating layers 125 and 127, and a conductive layer 115 is provided on the electron injection layer 114. A protective layer 131 is provided on light-emitting devices 130a, 130b, and 130c, respectively.

[0398] The protective layer 131 and the substrate 120 are bonded together via a resin layer 122. For sealing the light-emitting device, a solid sealing structure or a hollow sealing structure can be applied. In Figure 22A, the space between the substrate 120 and the substrate 101 is filled with the resin layer 122, indicating a solid sealing structure. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), indicating a hollow sealing structure. In this case, the resin layer 122 may be provided so as not to overlap with the light-emitting device. Furthermore, the space may be filled with a resin different from the frame-shaped resin layer 122.

[0399] In the connection portion 140, a conductive layer 111m is provided on the insulating layer 214. The conductive layer 111m is an example of a conductive film obtained by processing the same conductive film as conductive layers 111a, 111b, and 111c. The end of the conductive layer 111m is covered by at least the insulating layer 103. The end may be further covered by an insulating layer located on the insulating layer 103. For example, the end may be covered by an insulating layer 125, an insulating layer 127, etc. A conductive layer 115 is also provided on the conductive layer 111m. An electron injection layer 114 may be located between the conductive layer 111m and the conductive layer 115.

[0400] The display device 100A is a top-emission type. The light emitted from the light-emitting device is emitted towards the substrate 120. It is preferable to use a material with high transparency to visible light for the substrate 120.

[0401] The laminated structure up to the insulating layer 214 corresponds to layer 102 in Embodiment 1, etc.

[0402] Both transistors 201 and 205 are formed on the substrate 101. These transistors can be manufactured using the same materials and the same process.

[0403] On the substrate 101, insulating layers 211, 213, 215, and 214 are provided in this order. A portion of insulating layer 211 functions as a gate insulating layer for each transistor. A portion of insulating layer 213 functions as a gate insulating layer for each transistor. Insulating layer 215 is provided covering the transistors. Insulating layer 214 is provided covering the transistors and functions as a planarization layer. The number of gate insulating layers and insulating layers covering the transistors are not limited and may be a single layer or two or more layers, respectively.

[0404] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0405] It is preferable to use inorganic insulating films for insulating layer 211, insulating layer 213, and insulating layer 215. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxynitride film, silicon oxide film, silicon nitride oxide film, aluminum oxide film, aluminum nitride film, etc. Alternatively, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may also be used. Furthermore, two or more of the above insulating films may be laminated together.

[0406] An organic insulating film is preferred for the insulating layer 214, which functions as a planarizing layer. Materials that can be used for the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimidoamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating film and an inorganic insulating film.

[0407] Transistors 201 and 205 have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as source and drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0408] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0409] Transistors 201 and 205 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0410] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with crystalline regions in part) may be used. Using a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0411] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region. Alternatively, the semiconductor layer of the transistor may have silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.).

[0412] The semiconductor layer preferably comprises, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0413] In particular, it is preferable to use an oxide (also written as IGZO) containing indium (In), gallium (Ga), and zinc (Zn) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc.

[0414] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is equal to or greater than the atomic ratio of M. Examples of such In-M-Zn oxide atomic ratios of metal elements include compositions where In:M:Zn=1:1:1 or close to it, In:M:Zn=1:1:1.2 or close to it, In:M:Zn=2:1:3 or close to it, In:M:Zn=3:1:2 or close to it, In:M:Zn=4:2:3 or close to it, In:M:Zn=4:2:4.1 or close to it, In:M:Zn=5:1:3 or close to it, In:M:Zn=5:1:6 or close to it, In:M:Zn=5:1:7 or close to it, In:M:Zn=5:1:8 or close to it, In:M:Zn=6:1:6 or close to it, In:M:Zn=5:2:5 or close to it, and so on. Note that "close to it" compositions include a range of ±30% of the desired atomic ratio.

[0415] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atomic ratio of Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0416] The transistors in circuit 164 and the transistors in pixel unit 104 may have the same structure or different structures. The structures of the multiple transistors in circuit 164 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in pixel unit 104 may all be the same or there may be two or more different structures.

[0417] Furthermore, the transistor configuration used in the display panel can be appropriately selected according to the screen size of the display panel. For example, when single-crystal Si transistors are used as the transistors in the display panel, it can be applied to screen sizes with a diagonal of 0.1 inches to 3 inches. When LTPS transistors are used as the transistors in the display panel, it can be applied to screen sizes with a diagonal of 0.1 inches to 30 inches, preferably 1 inch to 30 inches. When LTPO (a configuration combining LTPS transistors and OS transistors) is used in the display panel, it can be applied to screen sizes with a diagonal of 0.1 inches to 50 inches, preferably 1 inch to 50 inches. When OS transistors are used as the transistors in the display panel, it can be applied to screen sizes with a diagonal of 0.1 inches to 200 inches, preferably 50 inches to 100 inches.

[0418] Furthermore, single-crystal Si transistors are extremely difficult to enlarge due to the size of the single-crystal Si substrate. Similarly, LTPS transistors require laser crystallization equipment in their manufacturing process, making it difficult to accommodate larger sizes (typically screen sizes exceeding 30 inches diagonally). On the other hand, OS transistors are not subject to the constraints of using laser crystallization equipment in their manufacturing process, or can be manufactured at relatively low process temperatures (typically below 450°C), making them suitable for relatively large display panels (typically between 50 and 100 inches diagonally). LTPO transistors can be applied to display panel sizes in the range between those using LTPS and OS transistors (typically between 1 and 50 inches diagonally).

[0419] All transistors in the pixel unit 104 may be OS transistors, all transistors in the pixel unit 104 may be Si transistors, or some of the transistors in the pixel unit 104 may be OS transistors and the rest may be Si transistors.

[0420] For example, by using both LTPS transistors and OS transistors in the pixel section 104, a display panel with low power consumption and high driving capability can be realized. Furthermore, a configuration combining LTPS transistors and OS transistors is sometimes referred to as LTPO. In a more preferable example, it is preferable to apply OS transistors to transistors that function as switches to control conduction and non-conductivity between wiring, and LTPS transistors to transistors that control current.

[0421] For example, one of the transistors in the pixel unit 104 functions as a transistor for controlling the current flowing to the light-emitting device, and can also be called a drive transistor. One of the source and drain of the drive transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor for this drive transistor. This makes it possible to increase the current flowing to the light-emitting device in the pixel circuit.

[0422] On the other hand, the other transistor in the pixel unit 104 functions as a switch for controlling the selection and deselection of pixels, and can also be called a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the source line (signal line). It is preferable to use an OS transistor for the selection transistor. This makes it possible to maintain the gradation of pixels even when the frame frequency is significantly reduced (e.g., 1 fps or less), and thus power consumption can be reduced by stopping the driver when displaying still images.

[0423] Thus, a display panel according to one embodiment of the present invention can combine a high aperture ratio, high resolution, high display quality, and low power consumption.

[0424] Furthermore, one embodiment of the present invention provides a display panel having an OS transistor and a light-emitting device with an MML (metal maskless) structure. This configuration makes it possible to extremely reduce the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting devices (also called lateral leakage current or side leakage current). With this configuration, when an image is displayed on the display panel, the observer can observe one or more of the following: image sharpness, image clarity, high saturation, and high contrast ratio. Moreover, by providing a configuration in which the leakage current that can flow through the transistor and the lateral leakage current between light-emitting devices are extremely low, it is possible to achieve a display with minimal light leakage that may occur when displaying black.

[0425] As other examples of transistor configurations, transistor 209 is shown in Figure 22B and transistor 210 is shown in Figure 22C.

[0426] Transistors 209 and 210 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer 231 having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel forming region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0427] In the transistor 209 shown in Figure 22B, an example is shown where the insulating layer 225 covers the top and sides of the semiconductor layer 231. The conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively. Of the conductive layers 222a and 222b, one functions as the source and the other as the drain.

[0428] On the other hand, in the transistor 210 shown in Figure 22C, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 22C can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 22C, an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215.

[0429] A connection portion 204 is provided in the area of ​​substrate 101 that does not overlap with substrate 120. At the connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The conductive layer 166 is shown as an example obtained by processing the same conductive film as conductive layers 111a, 111b, and 111c. On the upper surface of the connection portion 204, the conductive layer 166 is exposed. This allows the connection portion 204 and FPC 172 to be electrically connected via the connection layer 242.

[0430] It is preferable to provide a light-shielding layer 117 on the surface of the substrate 120 that faces the substrate 101. The light-shielding layer 117 can be provided between adjacent light-emitting devices, at connection points 140, and in circuits 164, etc. Various optical components can also be placed on the outside of the substrate 120. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (diffusion films, etc.), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may also be placed on the outside of the substrate 120.

[0431] By providing a protective layer 131 that covers the light-emitting device, it is possible to suppress the ingress of impurities such as water into the light-emitting device and improve the reliability of the light-emitting device.

[0432] Substrates 101 and 120 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, etc., respectively. The substrate on the side that extracts light from the light-emitting device should be made of a material that transmits the light. Using flexible materials for substrates 101 and 120 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as substrate 101 or substrate 120.

[0433] Substrates 101 and 120 can be made from polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 101 and 120 may be made of glass of a thickness sufficient to provide flexibility.

[0434] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0435] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0436] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0437] Furthermore, when using a film as the substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0438] As the resin layer 122, various curing adhesives can be used, such as UV-curing type adhesives, reaction-curing type adhesives, thermosetting type adhesives, and anaerobic type adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0439] As the connecting layer 242, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), etc., can be used.

[0440] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0441] Furthermore, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used as the light-transmitting conductive material. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used as conductive layers for various wirings and electrodes that constitute a display device, and as conductive layers (conductive layers that function as pixel electrodes or common electrodes) in light-emitting devices.

[0442] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0443] [Display device 100B] The display device 100B shown in Figure 23 differs from the display device 100A mainly in that it combines a light-emitting device with a color filter as a coloring layer. While the above-described configuration example 1 will be used to explain the display device 100B, other configuration examples can also be applied. Note that in the following explanation of the display device, parts similar to those described earlier may be omitted.

[0444] The light-emitting device 130a and the color filter 132a are superimposed. The light-emitting device 130a can emit red light, and the color filter 132a is a red color filter. The light emitted from the light-emitting device 130a is extracted as red light to the outside of the display device 100B via the color filter 132a.

[0445] Similarly, the light-emitting device 130b and the color filter 132b are superimposed. The light-emitting device 130b can emit green light, and the color filter 132b is a green color filter. The light emitted from the light-emitting device 130b is taken out as green light outside the display device 100B via the color filter 132b.

[0446] Similarly, the light-emitting device 130c and the color filter 132c are superimposed. The light-emitting device 130c can emit blue light, and the color filter 132c is a blue color filter. The light-emitting device 130c is extracted as blue light to the outside of the display device 100B via the color filter 132c.

[0447] [Display device 100C] The display device 100C shown in Figure 24 differs from the display device 100A mainly in that it uses a tandem structure of light-emitting devices. Although the tandem structure of Configuration Example 1 described above will be used as the display device 100C, the tandem structures of other configuration examples can also be applied.

[0448] In Figure 24, the organic compound layers 113a, 113b, and 113c are each shown as three layers, and specifically, a laminated structure consisting of a first light-emitting unit, a charge generation layer, and a second light-emitting unit can be applied.

[0449] In the display device 100C, the organic compound layer 113a can be configured in which a second light-emitting unit having a red light-emitting layer is laminated on top of a first light-emitting unit having a red light-emitting layer. Similarly, the organic compound layer 113b can be configured in which a second light-emitting unit having a green light-emitting layer is laminated on top of a first light-emitting unit having a green light-emitting layer. Furthermore, the organic compound layer 113c can be configured in which a second light-emitting unit having a blue light-emitting layer is laminated on top of a first light-emitting unit having a blue light-emitting layer.

[0450] By using tandem-structured light-emitting devices, the brightness of a display device can be increased. Alternatively, the current required to achieve the same brightness can be reduced, thereby improving the reliability of the display device.

[0451] A color filter may be provided in the display device 100C.

[0452] [Display device 100D] The display device 100D shown in Figure 25 differs from the display device 100A mainly in that it has a light-receiving device 130d. Although the above configuration example 1 will be used as the display device 100D for explanation, other configuration examples can also be applied.

[0453] The light-receiving device 130d has a conductive layer 111d.

[0454] The conductive layer 111d is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214.

[0455] The sides of the fifth layer 113d are covered by insulating layers 125 and 127. A sacrificial layer 118d is located between the fifth layer 113d and the insulating layer 125. An electron injection layer 114 is provided on the fifth layer 113d and the insulating layers 125 and 127, and a conductive layer 115 is provided on the electron injection layer 114. The electron injection layer 114 is a continuous film provided in common to both the photodetector and the light-emitting device.

[0456] The display device 100D can be configured to use the pixel layout described in the above embodiment. The light-receiving device 130d can be provided in the sub-pixel PS or sub-pixel IRS. For details of the display device having a light-receiving device, refer to Embodiment 1.

[0457] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0458] (Embodiment 4) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 26 to 31.

[0459] The display device of this embodiment can be a high-definition display device. Therefore, the display device of this embodiment can be used in the display section of wearable devices that can be worn on the head, such as information terminals (wearable devices) such as wristwatches and bracelets, as well as VR devices such as head-mounted displays and AR devices such as glasses.

[0460] [Display Module] Figure 26A shows a perspective view of the display module 280. The display module 280 includes a display device 100E and an FPC 290.

[0461] The display module 280 has substrates 291 and 292. The display module 280 has a display unit 281. The display unit 281 is an area in the display module 280 that displays an image, and is an area in which light from each pixel provided in the pixel unit 284, which will be described later, can be seen.

[0462] Figure 26B shows a schematic perspective view illustrating the configuration of the substrate 291. On the substrate 291, a circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked. In addition, a terminal section 285 for connecting to the FPC 290 is provided in the portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286, which is composed of multiple wires.

[0463] The pixel section 284 has multiple pixels 284a arranged periodically. A magnified view of a single pixel 284a is shown on the right side of Figure 26B. Each pixel 284a has light-emitting devices 130a, 130b, and 130c, each with a different emission color. The multiple light-emitting devices can be arranged in a stripe pattern as shown in Figure 26B. Furthermore, various arrangement methods for light-emitting devices, such as a delta pattern or a pentile pattern, can be applied.

[0464] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0465] A single pixel circuit 283a is a circuit that controls the light emission of three light-emitting devices in a single pixel 284a. A single pixel circuit 283a may be configured to have three circuits that control the light emission of one light-emitting device. For example, a pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitive element for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to either the source or the drain. This realizes an active-matrix type display device.

[0466] The circuit section 282 has circuits for driving each pixel circuit 283a of the pixel circuit section 283. For example, it is preferable to have one or both of a gate line drive circuit and a source line drive circuit. In addition, it may have at least one of the following: an arithmetic circuit, a memory circuit, and a power supply circuit.

[0467] The FPC290 functions as wiring for supplying video signals or power potential, etc., to the circuit section 282 from an external source. An IC may also be mounted on the FPC290.

[0468] The display module 280 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are stacked on the lower side of the pixel section 284, thereby enabling an extremely high aperture ratio (effective display area ratio) of the display section 281. For example, the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95%, and more preferably 60% or more and 95%. Furthermore, it is possible to arrange the pixels 284a at an extremely high density, enabling an extremely high resolution of the display section 281. For example, it is preferable that the pixels 284a in the display section 281 are arranged with a resolution of 20000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and with a resolution of 20000 ppi or less, or 30000 ppi or less.

[0469] Because such a display module 280 is extremely high-resolution, it can be suitably used in VR devices such as head-mounted displays, or in glasses-type AR devices. For example, even in a configuration where the display part of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display part 281, so even when the display part is magnified with lenses, pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small display parts. For example, it can be suitably used in the display part of wearable electronic devices such as watches.

[0470] [Example of a display device configuration] Figure 27A shows a block diagram of the display device 10. The display device 10 includes a display unit 11, a drive circuit unit 12, a drive circuit unit 13, and the like.

[0471] The display unit 11 has a plurality of pixels 30 arranged in a matrix. Each pixel 30 has sub-pixels 21R, 21G, and 21B. Each of the sub-pixels 21R, 21G, and 21B has a light-emitting device that functions as a display device.

[0472] Pixel 30 is electrically connected to wiring GL, wiring SLR, wiring SLG, and wiring SLB. Wiring SLR, wiring SLG, and wiring SLB are each electrically connected to the drive circuit unit 12. Wiring GL is electrically connected to the drive circuit unit 13. The drive circuit unit 12 functions as a source line drive circuit (also called a source driver), and the drive circuit unit 13 functions as a gate line drive circuit (also called a gate driver). Wiring GL functions as a gate line, and wiring SLR, wiring SLG, and wiring SLB each function as source lines.

[0473] Sub-pixel 21R has a light-emitting device that emits red light. Sub-pixel 21G has a light-emitting device that emits green light. Sub-pixel 21B has a light-emitting device that emits blue light. This allows the display device 10 to display in full color. Note that pixel 30 may have sub-pixels that emit light-emitting devices of other colors. For example, in addition to the three sub-pixels described above, pixel 30 may have a sub-pixel that emits white light, or a sub-pixel that emits yellow light, etc.

[0474] Wiring GL is electrically connected to sub-pixels 21R, 21G, and 21B, which are arranged in the row direction (the direction in which wiring GL extends). Wirings SLR, SLG, and SLB are electrically connected to sub-pixels 21R, 21G, or 21B (not shown), which are arranged in the column direction (the direction in which wiring SLR, etc. extends).

[0475] [Example of pixel circuit configuration] Figure 27B shows an example of a circuit diagram of a pixel 21 that can be applied to the sub-pixels 21R, 21G, and 21B described above. Pixel 21 has transistors M1, M2, M3, capacitor C1, and light-emitting device EL. Wiring GL and wiring SL are electrically connected to pixel 21. Wiring SL corresponds to one of the wirings SLR, SLG, and SLB shown in Figure 27A.

[0476] Transistor M1 has its gate electrically connected to wiring GL, one of its source and drain electrically connected to wiring SL, and the other of its source and drain electrically connected to one electrode of capacitor C1 and the gate of transistor M2. Transistor M2 has one of its source and drain electrically connected to wiring AL, and the other of its source and drain electrically connected to one electrode of light-emitting device EL, the other electrode of capacitor C1, and one of its source and drain. Transistor M3 has its gate electrically connected to wiring GL, and the other of its source and drain electrically connected to wiring RL. Light-emitting device EL has its other electrode electrically connected to wiring CL.

[0477] A data potential is supplied to wiring SL. A selection signal is supplied to wiring GL. This selection signal includes a potential that makes the transistor conduct and a potential that makes it non-conductive.

[0478] A reset potential is applied to wiring RL. An anode potential is applied to wiring AL. A cathode potential is applied to wiring CL. In pixel 21, the anode potential is set to a potential higher than the cathode potential. The reset potential applied to wiring RL can be set to a potential such that the potential difference between the reset potential and the cathode potential is smaller than the threshold voltage of the light-emitting device EL. The reset potential can be set to a potential higher than the cathode potential, the same as the cathode potential, or lower than the cathode potential.

[0479] Transistors M1 and M3 function as switches. Transistor M2 functions as a transistor for controlling the current flowing to the light-emitting device EL. For example, it can be said that transistor M1 functions as a selector transistor and transistor M2 functions as a drive transistor.

[0480] Here, it is preferable to apply LTPS transistors to all of transistors M1 through M3. Alternatively, it is preferable to apply OS transistors to transistors M1 and M3, and an LTPS transistor to transistor M2.

[0481] Alternatively, OS transistors may be applied to all of transistors M1 through M3. In this case, one or more of the transistors in the drive circuit unit 12 and the drive circuit unit 13 may be LTPS transistors, and the other transistors may be OS transistors. For example, OS transistors may be applied to the transistors provided in the display unit 11, and LTPS transistors may be applied to the transistors provided in the drive circuit unit 12 and the drive circuit unit 13.

[0482] As an OS transistor, a transistor using an oxide semiconductor in the semiconductor layer where the channel is formed can be used. The semiconductor layer preferably contains, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, it is preferable that M is one or more selected from aluminum, gallium, yttrium, and tin. In particular, it is preferable to use an oxide containing indium, gallium, and zinc (also written as IGZO) as the semiconductor layer of the OS transistor. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc.

[0483] Transistors using oxide semiconductors, which have a wider bandgap and lower carrier density than silicon, can achieve extremely low off-currents. Therefore, this low off-current allows the charge stored in a capacitor connected in series with the transistor to be retained for extended periods. For this reason, it is preferable to use transistors made of oxide semiconductors for transistors M1 and M3, which are connected in series with capacitor C1. By using transistors with oxide semiconductors as transistors M1 and M3, it is possible to prevent the charge held in capacitor C1 from leaking through transistor M1 or M3. Furthermore, because the charge held in capacitor C1 can be retained for extended periods, it becomes possible to display still images for extended periods without rewriting the data in pixel 21.

[0484] Note that in Figure 27B, the transistor is shown as an n-channel type transistor, but a p-channel type transistor can also be used.

[0485] Furthermore, it is preferable that each transistor in the pixel 21 be formed in a row on the same substrate.

[0486] As the transistor in pixel 21, a transistor having a pair of gates that overlap across a semiconductor layer can be applied.

[0487] In a transistor having a pair of gates, configuring the pair of gates to be electrically connected to each other and given the same potential offers advantages such as increased on-current and improved saturation characteristics. Alternatively, one of the pair of gates may be given a potential that controls the transistor's threshold voltage. Furthermore, providing a constant potential to one of the pair of gates can improve the stability of the transistor's electrical characteristics. For example, one of the transistor's gates may be electrically connected to a wiring to which a constant potential is provided, or it may be electrically connected to its own source or drain.

[0488] The pixel 21 shown in Figure 27C is an example where transistors M1 and M3 each have a pair of gates. The pair of gates of transistors M1 and M3 are electrically connected. This configuration shortens the data writing time to the pixel 21.

[0489] The pixel 21 shown in Figure 27D is an example in which a transistor with a pair of gates is applied to transistor M2, in addition to transistors M1 and M3. In transistor M2, the pair of gates are electrically connected. By applying such a transistor to transistor M2, the saturation characteristics are improved, making it easier to control the luminescence brightness of the light-emitting device EL and improving the display quality.

[0490] [Example of transistor configuration] The following describes examples of transistor cross-sectional configurations that can be applied to the above-mentioned display device.

[0491] [Configuration Example 1] Figure 28A is a cross-sectional view including transistor 410.

[0492] Transistor 410 is a transistor provided on substrate 401, with polycrystalline silicon applied to its semiconductor layer. For example, transistor 410 corresponds to transistor M2 of pixel 21. That is, Figure 28A shows an example where one of the source and drain of transistor 410 is electrically connected to the conductive layer 431 of the light-emitting device.

[0493] The transistor 410 has a semiconductor layer 411, an insulating layer 412, a conductive layer 413, etc. The semiconductor layer 411 has a channel-forming region 411i and a low-resistance region 411n. The semiconductor layer 411 is made of silicon. Preferably, the semiconductor layer 411 is made of polycrystalline silicon. A portion of the insulating layer 412 functions as a gate insulating layer. A portion of the conductive layer 413 functions as a gate electrode.

[0494] Furthermore, the semiconductor layer 411 may also be configured to include a metal oxide (also called an oxide semiconductor) that exhibits semiconductor properties. In this case, the transistor 410 can be called an OS transistor.

[0495] The low-resistance region 411n is a region containing impurity elements. For example, if transistor 410 is an n-channel type transistor, phosphorus, arsenic, etc., can be added to the low-resistance region 411n. On the other hand, if it is a p-channel type transistor, boron, aluminum, etc., can be added to the low-resistance region 411n. Furthermore, in order to control the threshold voltage of transistor 410, the aforementioned impurities may also be added to the channel formation region 411i.

[0496] An insulating layer 421 is provided on the substrate 401. The semiconductor layer 411 is provided on the insulating layer 421. The insulating layer 412 is provided covering the semiconductor layer 411 and the insulating layer 421. The conductive layer 413 is provided on the insulating layer 412 in a position overlapping with the semiconductor layer 411.

[0497] Furthermore, an insulating layer 422 is provided covering the conductive layer 413 and the insulating layer 412. Conductive layers 414a and 414b are provided on the insulating layer 422. Conductive layers 414a and 414b are electrically connected to the low-resistance region 411n at openings provided in the insulating layers 422 and 412. A portion of the conductive layer 414a functions as one of the source electrode and drain electrode, and a portion of the conductive layer 414b functions as the other of the source electrode and drain electrode. In addition, an insulating layer 423 is provided covering the conductive layer 414a, conductive layer 414b, and insulating layer 422.

[0498] A conductive layer 431, which functions as a pixel electrode, is provided on the insulating layer 423. The conductive layer 431 is provided on the insulating layer 423 and is electrically connected to the conductive layer 414b at an opening provided in the insulating layer 423. Although not shown here, an EL layer and a common electrode can be laminated on the conductive layer 431.

[0499] [Configuration Example 2] Figure 28B shows a transistor 410a having a pair of gate electrodes. The transistor 410a shown in Figure 28B differs from that in Figure 28A mainly in that it has a conductive layer 415 and an insulating layer 416.

[0500] The conductive layer 415 is provided on the insulating layer 421. Furthermore, an insulating layer 416 is provided covering the conductive layer 415 and the insulating layer 421. The semiconductor layer 411 is provided such that at least the channel-forming region 411i overlaps with the conductive layer 415 via the insulating layer 416.

[0501] In the transistor 410a shown in Figure 28B, a portion of the conductive layer 413 functions as a first gate electrode, and a portion of the conductive layer 415 functions as a second gate electrode. At the same time, a portion of the insulating layer 412 functions as a first gate insulating layer, and a portion of the insulating layer 416 functions as a second gate insulating layer.

[0502] Here, when electrically connecting the first gate electrode and the second gate electrode, the conductive layer 413 and the conductive layer 415 may be electrically connected through openings provided in the insulating layer 412 and the insulating layer 416 in a region not shown. Also, when electrically connecting the second gate electrode to the source or drain, the conductive layer 414a or conductive layer 414b and the conductive layer 415 may be electrically connected through openings provided in the insulating layer 422, the insulating layer 412, and the insulating layer 416 in a region not shown.

[0503] When LTPS transistors are applied to all transistors constituting pixel 21, transistor 410 as exemplified in Figure 28A, or transistor 410a as exemplified in Figure 28B, can be applied. In this case, transistor 410a may be used for all transistors constituting pixel 21, transistor 410 may be applied to all transistors, or transistor 410a and transistor 410 may be used in combination.

[0504] [Configuration Example 3] The following describes an example of a configuration that includes both transistors with silicon semiconductor layers and transistors with metal oxide semiconductor layers.

[0505] Figure 28C shows a schematic cross-sectional view including transistors 410a and 450.

[0506] For transistor 410a, the above configuration example 1 can be used. Although an example using transistor 410a is shown here, a configuration with transistor 410 and transistor 450 is also possible, or a configuration with all of transistors 410, 410a, and 450 is also possible.

[0507] Transistor 450 is a transistor in which a metal oxide is applied to the semiconductor layer. The configuration shown in Figure 28C is an example in which, for example, transistor 450 corresponds to transistor M1 of pixel 21 and transistor 410a corresponds to transistor M2. That is, Figure 28C is an example in which one of the source and drain of transistor 410a is electrically connected to the conductive layer 431.

[0508] Figure 28C also shows an example where transistor 450 has a pair of gates.

[0509] The transistor 450 has a conductive layer 455, an insulating layer 422, a semiconductor layer 451, an insulating layer 452, a conductive layer 453, etc. A portion of the conductive layer 453 functions as the first gate of the transistor 450, and a portion of the conductive layer 455 functions as the second gate of the transistor 450. At this time, a portion of the insulating layer 452 functions as the first gate insulating layer of the transistor 450, and a portion of the insulating layer 422 functions as the second gate insulating layer of the transistor 450.

[0510] The conductive layer 455 is provided on the insulating layer 412. The insulating layer 422 covers the conductive layer 455. The semiconductor layer 451 is provided on the insulating layer 422. The insulating layer 452 covers the semiconductor layer 451 and the insulating layer 422. The conductive layer 453 is provided on the insulating layer 452 and has a region that overlaps with the semiconductor layer 451 and the conductive layer 455.

[0511] Furthermore, an insulating layer 426 is provided covering the insulating layer 452 and the conductive layer 453. Conductive layers 454a and 454b are provided on the insulating layer 426. Conductive layers 454a and 454b are electrically connected to the semiconductor layer 451 at openings provided in the insulating layer 426 and the insulating layer 452. A portion of the conductive layer 454a functions as one of the source electrode and drain electrode, and a portion of the conductive layer 454b functions as the other of the source electrode and drain electrode. In addition, an insulating layer 423 is provided covering the conductive layer 454a, the conductive layer 454b, and the insulating layer 426.

[0512] Here, it is preferable that the conductive layers 414a and 414b, which are electrically connected to the transistor 410a, are formed by processing the same conductive film as conductive layers 454a and 454b. Figure 28C shows a configuration in which conductive layers 414a, 414b, 454a, and 454b are formed on the same plane (i.e., in contact with the upper surface of the insulating layer 426) and contain the same metal element. In this case, conductive layers 414a and 414b are electrically connected to the low-resistance region 411n through openings provided in the insulating layer 426, insulating layer 452, insulating layer 422, and insulating layer 412. This is preferable because it simplifies the manufacturing process.

[0513] Furthermore, it is preferable that the conductive layer 413, which functions as the first gate electrode of transistor 410a, and the conductive layer 455, which functions as the second gate electrode of transistor 450, be formed by processing the same conductive film. Figure 28C shows a configuration in which the conductive layer 413 and the conductive layer 455 are formed on the same plane (i.e., in contact with the upper surface of the insulating layer 412) and contain the same metal element. This is preferable because it simplifies the manufacturing process.

[0514] In Figure 28C, the insulating layer 452, which functions as the first gate insulating layer of the transistor 450, is configured to cover the edge of the semiconductor layer 451. However, as shown in the transistor 450a in Figure 28D, the insulating layer 452 may be processed so that its upper surface shape matches or roughly matches that of the conductive layer 453.

[0515] In this specification, "approximately matching top surface shapes" means that at least a portion of the contours overlap between stacked layers. For example, this includes cases where the upper and lower layers are processed with the same mask pattern, or partially with the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or the upper layer may be located outside the lower layer; in this case, too, it is said that the "top surface shapes are approximately matching."

[0516] In this example, transistor 410a corresponds to transistor M2 and is electrically connected to the pixel electrode, but this is not the only example. For example, transistor 450 or transistor 450a may correspond to transistor M2. In this case, transistor 410a corresponds to transistor M1, transistor M3, or another transistor.

[0517] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0518] (Embodiment 5) This embodiment describes metal oxides (also called oxide semiconductors) that can be used in the OS transistor described in the above embodiment.

[0519] The metal oxide preferably contains at least indium or zinc. It is particularly preferable that it contains indium and zinc. In addition, it is preferable that it contains aluminum, gallium, yttrium, tin, etc. It may also contain one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc.

[0520] Furthermore, metal oxides can be formed by chemical vapor deposition (CVD) methods such as sputtering, metal-organic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).

[0521] <Classification of crystal structures> Examples of crystalline structures for oxide semiconductors include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystal.

[0522] The crystal structure of a film or substrate can be evaluated using X-ray diffraction (XRD) spectroscopy. For example, it can be evaluated using the XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement. The GIXD method is also known as the thin-film method or the Seemann-Bohlin method.

[0523] For example, in a quartz glass substrate, the peak shape of the XRD spectrum is nearly symmetrical. On the other hand, in an IGZO film with a crystalline structure, the peak shape of the XRD spectrum is asymmetrical. The asymmetrical shape of the XRD spectrum peak clearly indicates the presence of crystals in the film or substrate. In other words, if the peak shape of the XRD spectrum is not symmetrical, the film or substrate cannot be said to be in an amorphous state.

[0524] Furthermore, the crystalline structure of a film or substrate can be evaluated by the diffraction pattern (also called the nano-beam electron diffraction pattern) observed using nano-beam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. However, in the diffraction pattern of an IGZO film deposited at room temperature, a spot-like pattern is observed instead of a halo. Therefore, it is presumed that an IGZO film deposited at room temperature is in an intermediate state, neither crystalline nor amorphous, and cannot be concluded to be in an amorphous state.

[0525] <<Oxide semiconductor structure>> It should be noted that oxide semiconductors may be classified differently from those described above when considering their structure. For example, oxide semiconductors can be divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the aforementioned CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors also include polycrystalline oxide semiconductors, pseudo-amorphous oxide semiconductors (a-like OS), amorphous oxide semiconductors, etc.

[0526] Here, we will explain the details of the CAAC-OS, nc-OS, and a-like OS mentioned above.

[0527] [CAAC-OS] CAAC-OS is an oxide semiconductor having multiple crystalline regions, the c-axis of which is oriented in a specific direction. This specific direction is the thickness direction of the CAAC-OS film, the normal direction to the surface on which the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. A crystalline region is a region with periodic atomic arrangement. If we consider the atomic arrangement as a lattice arrangement, then a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC-OS has regions where multiple crystalline regions are connected in the ab-plane direction, and these regions may exhibit distortion. Distortion refers to a point in the connected region where the orientation of the lattice arrangement changes between a region with a aligned lattice arrangement and another region with a aligned lattice arrangement. In short, CAAC-OS is an oxide semiconductor that is c-axis oriented and does not exhibit clear orientation in the ab-plane direction.

[0528] Each of the above-mentioned crystalline regions is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of one minute crystal, the maximum diameter of that crystalline region is less than 10 nm. When a crystalline region is composed of multiple minute crystals, the size of that crystalline region may be around several tens of nanometers.

[0529] Furthermore, in In-M-Zn oxides (where element M is one or more elements selected from aluminum, gallium, yttrium, tin, titanium, etc.), CAAC-OS tends to have a layered crystalline structure (also called a layered structure) consisting of layers containing indium (In) and oxygen (hereinafter referred to as the In layer) and layers containing element M, zinc (Zn), and oxygen (hereinafter referred to as the (M,Zn) layer). Note that indium and element M are mutually substitutable. Therefore, the (M,Zn) layer may contain indium. Also, the In layer may contain element M. Also, the In layer may contain Zn. This layered structure can be observed, for example, as a lattice image in high-resolution TEM (Transmission Electron Microscope) images.

[0530] When structural analysis of a CAAC-OS film is performed using an XRD instrument, for example, out-of-plane XRD measurements using θ / 2θ scanning show a peak indicating c-axis orientation at 2θ = 31° or nearby. Note that the position of the peak indicating c-axis orientation (value of 2θ) may vary depending on the type and composition of the metal elements constituting the CAAC-OS.

[0531] Furthermore, for example, multiple bright spots are observed in the electron diffraction pattern of a CAAC-OS film. These spots are observed at point-symmetric positions with respect to the incident electron beam spot (also called the direct spot) that passed through the sample.

[0532] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is based on a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be non-regular hexagonal. Furthermore, the strain may have lattice arrangements such as pentagons or heptagons. Moreover, in CAAC-OS, clear grain boundaries cannot be observed even near the strain. In other words, it can be seen that the formation of grain boundaries is suppressed by the strain in the lattice arrangement. This is thought to be because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the ab-plane direction, and the bond distance between atoms changes due to the substitution of metal atoms.

[0533] A crystal structure in which clear grain boundaries are observed is called a polycrystal. Grain boundaries act as recombination centers, trapping carriers and potentially causing a decrease in transistor on-current and field-effect mobility. Therefore, CAAC-OS, in which clear grain boundaries are not observed, is one of the crystalline oxides with a suitable crystal structure for the semiconductor layer of a transistor. In addition, a structure containing Zn is preferred for the composition of CAAC-OS. For example, In-Zn oxide and In-Ga-Zn oxide are preferred because they suppress the generation of grain boundaries more effectively than In oxide.

[0534] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less susceptible to the decrease in electron mobility caused by grain boundaries. Furthermore, since the crystallinity of oxide semiconductors can decrease due to the inclusion of impurities and the generation of defects, CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Consequently, oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are heat-resistant and highly reliable. In addition, CAAC-OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using CAAC-OS in OS transistors allows for greater flexibility in the manufacturing process.

[0535] [nc-OS] nc-OS exhibits periodicity in atomic arrangement in minute regions (e.g., regions between 1 nm and 10 nm, particularly between 1 nm and 3 nm). In other words, nc-OS contains minute crystals. These minute crystals are also called nanocrystals because their size is, for example, between 1 nm and 10 nm, particularly between 1 nm and 3 nm. Furthermore, nc-OS shows no regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed throughout the film. Consequently, depending on the analytical method, nc-OS may be indistinguishable from a-like OS or amorphous oxide semiconductors. For example, when structural analysis of an nc-OS film is performed using an XRD instrument, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scanning. Also, when electron diffraction (also called limited-field electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter larger than that of the nanocrystals (e.g., 50 nm or larger), a diffraction pattern resembling a halo pattern is observed. On the other hand, when electron diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter close to or smaller than the size of the nanocrystal (for example, 1 nm to 30 nm), an electron diffraction pattern may be obtained in which multiple spots are observed within a ring-shaped region centered on a direct spot.

[0536] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. Also, a-like OS has a higher hydrogen concentration in the film compared to nc-OS and CAAC-OS.

[0537] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS refers to the material composition.

[0538] [CAC-OS] CAC-OS is a material composition in which, for example, the elements constituting the metal oxide are unevenly distributed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size. In the following, a state in which one or more metal elements are unevenly distributed in a metal oxide, and the regions containing these metal elements are mixed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size, is also referred to as a mosaic or patchy state.

[0539] Furthermore, CAC-OS is a composite metal oxide having a mosaic-like structure formed by the separation of the material into a first region and a second region, with the first region distributed within the film (hereinafter also referred to as a cloud-like structure). In other words, CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.

[0540] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS of In-Ga-Zn oxide, the first region is the region where [In] is greater than the [In] in the composition of the CAC-OS film. The second region is the region where [Ga] is greater than the [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is the region where [In] is greater than the [In] in the second region, and [Ga] is smaller than the [Ga] in the second region. The second region is the region where [Ga] is greater than the [Ga] in the first region, and [In] is smaller than the [In] in the first region.

[0541] Specifically, the first region described above is a region whose main components are indium oxide, indium zinc oxide, etc. The second region described above is a region whose main components are gallium oxide, gallium zinc oxide, etc. In other words, the first region can be rephrased as a region whose main component is In. Similarly, the second region can be rephrased as a region whose main component is Ga.

[0542] Furthermore, a clear boundary may not be observed between the first region and the second region described above.

[0543] Furthermore, CAC-OS in In-Ga-Zn oxide refers to a material composition containing In, Ga, Zn, and O, in which regions with Ga as the main component and regions with In as the main component are arranged in a mosaic-like manner, with these regions existing randomly. Therefore, it is presumed that CAC-OS has a structure in which metal elements are unevenly distributed.

[0544] CAC-OS can be formed, for example, by sputtering under conditions where the substrate is not heated. When forming CAC-OS by sputtering, one or more gases selected from inert gases (typically argon), oxygen gas, and nitrogen gas may be used as the film-forming gas. Furthermore, it is preferable that the ratio of the oxygen gas flow rate to the total flow rate of the film-forming gas during film formation be as low as possible. For example, it is preferable that the ratio of the oxygen gas flow rate to the total flow rate of the film-forming gas during film formation be 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0545] Furthermore, for example, in the case of CAC-OS in In-Ga-Zn oxide, EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) confirms that it has a structure in which regions mainly composed of In (first region) and regions mainly composed of Ga (second region) are unevenly distributed and mixed.

[0546] Here, the first region is a region with higher conductivity compared to the second region. In other words, the conductivity of the metal oxide is exhibited when carriers flow through the first region. Therefore, a high field-effect mobility (μ) can be achieved when the first region is distributed in a cloud-like manner within the metal oxide.

[0547] On the other hand, the second region is a region with higher insulating properties compared to the first region. In other words, the distribution of the second region within the metal oxide can suppress leakage current.

[0548] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the insulation due to the second region work complementaryly to give CAC-OS a switching function (on / off function). In other words, CAC-OS has conductive function in part of the material, insulating function in part of the material, and semiconductor function as a whole. By separating the conductive function and the insulating function, both functions can be maximized. Therefore, by using CAC-OS in a transistor, a high on-current (I on ), high field-effect mobility (μ), and good switching operation can be achieved.

[0549] Furthermore, transistors using CAC-OS offer high reliability. Therefore, CAC-OS is ideal for various semiconductor devices, including display devices.

[0550] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention may include two or more of the following: amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CAC-OS, nc-OS, and CAAC-OS.

[0551] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0552] By using the above-mentioned oxide semiconductor in transistors, it is possible to realize transistors with high field-effect mobility. Furthermore, it is possible to realize highly reliable transistors.

[0553] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. For example, the carrier concentration of an oxide semiconductor is 1 × 10⁻⁶. 17 cm -3 The following is preferably 1 × 10 15 cm -3 More preferably 1 × 10 13 cm -3More preferably 1 × 10 11 cm -3 More preferably 1 × 10 10 cm -3 It is less than 1 × 10 -9 cm -3 This concludes the explanation. Furthermore, when lowering the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film should be lowered to reduce the defect level density. In this specification, a low impurity concentration and low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic. Note that oxide semiconductors with low carrier concentrations are sometimes referred to as high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors.

[0554] Furthermore, oxide semiconductor films that are highly intrinsic or substantially highly intrinsic may have a low trap level density due to their low defect level density.

[0555] Furthermore, charges trapped in the trap levels of oxide semiconductors can take a long time to disappear, sometimes behaving like fixed charges. Therefore, transistors in which channel formation regions are formed in oxide semiconductors with a high trap level density may exhibit unstable electrical properties.

[0556] Therefore, reducing the impurity concentration in the oxide semiconductor is effective in stabilizing the electrical characteristics of the transistor. Furthermore, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in adjacent films. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon.

[0557] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0558] In oxide semiconductors, the presence of silicon or carbon, which are Group 14 elements, leads to the formation of defect levels in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (concentration obtained by secondary ion mass spectrometry (SIMS)) are compared by 2 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 17 atoms / cm 3 The following applies:

[0559] Furthermore, if an oxide semiconductor contains alkali metals or alkaline earth metals, it may form defect levels and generate carriers. Therefore, transistors using oxide semiconductors containing alkali metals or alkaline earth metals tend to exhibit normally-on characteristics. For this reason, the concentration of alkali metals or alkaline earth metals in the oxide semiconductor obtained by SIMS should be set to 1 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0560] Furthermore, in oxide semiconductors, the presence of nitrogen generates electrons, which act as carriers, increasing the carrier concentration and making it easier for the semiconductor to become n-type. As a result, transistors using oxide semiconductors containing nitrogen tend to exhibit normally-on characteristics. Alternatively, the presence of nitrogen in oxide semiconductors can lead to the formation of trap levels. As a result, the electrical properties of the transistor may become unstable. For this reason, the nitrogen concentration in oxide semiconductors obtained by SIMS should be set to 5 × 10⁻⁶. 19 atoms / cm 3 Less than 5 × 10 18 atoms / cm 3 More preferably 1 × 10 18 atoms / cm 3 More preferably 5 × 10 17 atoms / cm 3 Do the following:

[0561] Furthermore, hydrogen contained in oxide semiconductors can react with oxygen bonded to metal atoms to form water, potentially creating oxygen vacancies. Hydrogen can then fill these vacancies, generating electrons, which act as carriers. Additionally, some of the hydrogen can combine with oxygen bonded to metal atoms to generate electrons. Therefore, transistors using oxide semiconductors containing hydrogen tend to exhibit normally-on characteristics. For this reason, it is preferable to reduce the hydrogen content in oxide semiconductors as much as possible. Specifically, in oxide semiconductors, the hydrogen concentration obtained by SIMS should be 1 × 10⁻⁶. 20 atoms / cm 3 Less than 1 × 10 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3 Less than 1 × 10 18 atoms / cm 3 Make it less than.

[0562] By using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor, stable electrical characteristics can be provided.

[0563] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0564] (Embodiment 6) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 29 to 33.

[0565] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. The display device according to one aspect of the present invention is easily made high-definition and high-resolution. Therefore, it can be used in the display units of various electronic devices.

[0566] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, and other electronic devices with relatively large screens, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0567] In particular, a display device according to one aspect of the present invention can be used suitably in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays, AR devices such as glasses, and MR devices.

[0568] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device having either high resolution or high detail, or both, it becomes possible to further enhance the sense of presence and depth in personal electronic devices such as portable or home-use devices. Furthermore, there are no particular limitations on the screen ratio (aspect ratio) of the display device according to one embodiment of the present invention. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0569] The electronic device of this embodiment may have sensors (including those with the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0570] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0571] Figures 29A, 29B, 30A, and 30B illustrate an example of a wearable device that can be worn on the head. These wearable devices have the function of displaying AR content, or the function of displaying VR content, or both. In addition to AR and VR, these wearable devices may also have the function of displaying SR or MR content. By having electronic devices that can display AR, VR, SR, MR, etc., it is possible to enhance the user's sense of immersion.

[0572] The electronic device 700A shown in Figure 29A and the electronic device 700B shown in Figure 29B each include a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0573] A display device according to one aspect of the present invention can be applied to the display panel 751. Therefore, an electronic device capable of displaying extremely high resolution can be created.

[0574] Electronic devices 700A and 700B can project an image displayed on the display panel 751 onto the display area 756 of the optical element 753. Because the optical element 753 is translucent, the user can see the image displayed on the display area superimposed on the transmitted image visible through the optical element 753. Therefore, electronic devices 700A and 700B are electronic devices capable of AR display.

[0575] Electronic devices 700A and 700B may be equipped with cameras capable of capturing images of the area in front of them as imaging units. Furthermore, electronic devices 700A and 700B may each be equipped with acceleration sensors such as gyro sensors to detect the orientation of the user's head and display an image corresponding to that orientation in the display area 756.

[0576] The communications unit has a wireless communication device, which can supply video signals and the like. Alternatively, instead of the wireless communication device, or in addition to the wireless communication device, it may be equipped with a connector to which a cable supplying video signals and power potential can be connected.

[0577] Furthermore, electronic devices 700A and 700B are equipped with batteries that can be charged wirelessly, wired, or both.

[0578] The housing 721 may be equipped with a touch sensor module. The touch sensor module has the function of detecting when the outer surface of the housing 721 is touched. The touch sensor module can detect the user's tap or slide operations and perform various processes. For example, a tap operation can be used to pause or resume the video, and a slide operation can be used to fast forward or rewind. Furthermore, by providing a touch sensor module in each of the two housings 721, the range of operations can be expanded.

[0579] Various types of touch sensors can be applied to the touch sensor module. For example, various methods such as capacitive, resistive, infrared, electromagnetic induction, surface acoustic wave, and optical sensors can be used. In particular, it is preferable to apply a capacitive or optical sensor to the touch sensor module.

[0580] When using an optical touch sensor, a photoelectric conversion device (also called a photoelectric element) can be used as the light-receiving device (also called a photoelectric element). The active layer of the photoelectric conversion device can be made of either an inorganic semiconductor or an organic semiconductor, or both.

[0581] The electronic device 800A shown in Figure 30A and the electronic device 800B shown in Figure 30B each include a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0582] A display device according to one embodiment of the present invention can be applied to the display unit 820. Therefore, an electronic device capable of displaying extremely high resolution can be created. This allows the user to experience a high level of immersion.

[0583] The display unit 820 is located inside the housing 821, in a position where it can be seen through the lens 832. Furthermore, by displaying different images on a pair of display units 820, a three-dimensional display using parallax can also be performed.

[0584] Electronic devices 800A and 800B can be described as electronic devices for VR. A user wearing either electronic device 800A or electronic device 800B can view the image displayed on the display unit 820 through the lens 832.

[0585] It is preferable that electronic devices 800A and 800B each have a mechanism that allows adjustment of the left and right positions of the lens 832 and the display unit 820 so that they are in the optimal position according to the user's eye position. It is also preferable that they have a mechanism that adjusts the focus by changing the distance between the lens 832 and the display unit 820.

[0586] The attachment portion 823 allows the user to attach the electronic device 800A or 800B to their head. While Figure 30A and other figures illustrate the attachment portion as resembling the temples (or joints, etc.) of eyeglasses, it is not limited to this shape. The attachment portion 823 only needs to be wearable by the user; for example, it may be helmet-shaped or band-shaped.

[0587] The imaging unit 825 has the function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used in the imaging unit 825. In addition, multiple cameras may be provided to accommodate multiple angles of view, such as telephoto and wide-angle.

[0588] Although an example with an imaging unit 825 is shown here, any distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object can be provided. In other words, the imaging unit 825 is one form of a detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as LiDAR (Light Detection and Ranging) can be used. By using the image obtained by the camera and the image obtained by the distance image sensor, more information can be acquired, enabling more accurate gesture control.

[0589] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, housing 821, and mounting unit 823. This allows users to enjoy video and audio simply by wearing the electronic device 800A, without needing separate audio equipment such as headphones, earphones, or speakers.

[0590] Electronic devices 800A and 800B may each have input terminals. Cables can be connected to the input terminals to supply video signals from video output devices, etc., and power for charging batteries provided within the electronic devices.

[0591] An electronic device according to one aspect of the present invention may have a function for wireless communication with an earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., voice data) from the electronic device through its wireless communication function. For example, the electronic device 700A shown in Figure 29A has a function for transmitting information to the earphone 750 through its wireless communication function. Also, for example, the electronic device 800A shown in Figure 30A has a function for transmitting information to the earphone 750 through its wireless communication function.

[0592] Furthermore, the electronic device may have an earphone section. The electronic device 700B shown in Figure 29B has an earphone section 727. For example, the earphone section 727 and the control unit can be connected to each other by a wire. Some of the wiring connecting the earphone section 727 and the control unit may be located inside the housing 721 or the mounting section 723.

[0593] Similarly, the electronic device 800B shown in Figure 30B has an earphone unit 827. For example, the earphone unit 827 and the control unit 824 can be connected to each other by a wire. Part of the wiring connecting the earphone unit 827 and the control unit 824 may be located inside the housing 821 or the mounting unit 823. Also, the earphone unit 827 and the mounting unit 823 may have magnets. This allows the earphone unit 827 to be fixed to the mounting unit 823 by magnetic force, which is preferable as it facilitates storage.

[0594] Furthermore, the electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have an audio input terminal and / or an audio input mechanism. For example, a microphone or other sound-collecting device can be used as the audio input mechanism. By having an audio input mechanism, the electronic device may be given the function of a so-called headset.

[0595] Thus, as one embodiment of the present invention, both eyeglass-type (electronic devices 700A and 700B, etc.) and goggle-type (electronic devices 800A and 800B, etc.) are preferred as electronic devices.

[0596] Furthermore, an electronic device according to one aspect of the present invention can transmit information to earphones via wired or wireless means.

[0597] The electronic device 6500 shown in Figure 31A is a portable information terminal that can be used as a smartphone.

[0598] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0599] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0600] Figure 31B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0601] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0602] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0603] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0604] A flexible display according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, it is possible to realize an electronic device with a narrow bezel.

[0605] Figure 32A shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0606] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0607] The television device 7100 shown in Figure 32A can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0608] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0609] Figure 32B shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0610] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0611] Figures 32C and 32D show examples of digital signage.

[0612] The digital signage 7300 shown in Figure 32C includes a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0613] Figure 32D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0614] In Figures 32C and 32D, a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0615] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0616] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0617] Furthermore, as shown in Figures 32C and 32D, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. Also, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0618] Furthermore, the digital signage 7300 or digital signage 7400 can be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0619] The electronic equipment shown in Figures 33A to 33G includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0620] The electronic devices shown in Figures 33A to 33G have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0621] Details of the electronic equipment shown in Figures 33A to 33G will be explained below.

[0622] Figure 33A is a perspective view showing a personal digital assistant (PDA) 9101. The PDA 9101 can be used, for example, as a smartphone. The PDA 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. The PDA 9101 can also display text and image information on multiple surfaces. Figure 33A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the subject of the email or SNS message, the sender's name, date and time, time, battery level, signal strength, etc. Alternatively, icons 9050, etc., may be displayed in the position where the information 9051 is displayed.

[0623] Figure 33B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0624] Figure 33C is a perspective view showing the tablet terminal 9103. The tablet terminal 9103 can run various applications, such as mobile phone calls, email, document viewing and creation, music playback, internet communication, and computer games. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000. The left side of the housing 9000 has operation keys 9005 as buttons for operation, and the bottom has connection terminals 9006.

[0625] Figure 33D is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. Charging may be performed by wireless power supply.

[0626] Figures 33E to 33G are perspective views showing a foldable personal information terminal 9201. Figure 33E shows the personal information terminal 9201 in an unfolded state, Figure 33G shows it in a folded state, and Figure 33F shows a perspective view of the state in between, transitioning from one of Figures 33E or 33G to the other. The personal information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the personal information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0627] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate. [Explanation of Symbols]

[0628] 100: Display device, 101: Substrate, 102: Layer, 103: Insulating layer, 104: Pixel area, 111: Conductive layer, 113: Organic compound layer, 114: Electron injection layer, 115: Conductive layer, 118: Sacrificial layer, 120: Substrate, 122: Resin layer, 125: Insulating layer, 127: Insulating layer, 130: Light-emitting device, 131: Protective layer, 140: Connection part, Da: Thickness, Db: Thickness, Dc: Thickness

Claims

1. A first light-emitting device and A second light-emitting device is located next to the first light-emitting device, A third light-emitting device located next to the second light-emitting device, The first insulating layer, It has a second insulating layer, The first light-emitting device comprises a first lower electrode, a first organic compound layer on the first lower electrode, and a first upper electrode on the first organic compound layer. The second light-emitting device comprises a second lower electrode, a second organic compound layer on the second lower electrode, and a second upper electrode on the second organic compound layer. The third light-emitting device comprises a third lower electrode, a third organic compound layer on the third lower electrode, and a third upper electrode on the third organic compound layer. In cross-sectional view, the first insulating layer has a first region located between the first organic compound layer and the second organic compound layer, and a second region located between the second organic compound layer and the third organic compound layer. The second insulating layer has a region located on the third lower electrode, The thickness of the third organic compound layer is different from the thickness of the first organic compound layer. The thickness of the third organic compound layer is different from the thickness of the second organic compound layer. In a cross-sectional view, the first insulating layer is provided such that its height from the lower surface of the third lower electrode is the same as its height from the lower surface of the second lower electrode. Display device.

2. A first light-emitting device and A second light-emitting device is located next to the first light-emitting device, A third light-emitting device located next to the second light-emitting device, The first insulating layer, It has a second insulating layer, The first light-emitting device comprises a first lower electrode, a first organic compound layer on the first lower electrode, and a first upper electrode on the first organic compound layer. The second light-emitting device comprises a second lower electrode, a second organic compound layer on the second lower electrode, and a second upper electrode on the second organic compound layer. The third light-emitting device comprises a third lower electrode, a third organic compound layer on the third lower electrode, and a third upper electrode on the third organic compound layer. In cross-sectional view, the first insulating layer has a first region located between the first organic compound layer and the second organic compound layer, and a second region located between the second organic compound layer and the third organic compound layer. The second insulating layer has a region that overlaps with the third lower electrode, The thickness of the third organic compound layer is smaller than the thickness of the first organic compound layer. The thickness of the third organic compound layer is less than the thickness of the second organic compound layer. In a cross-sectional view, the first insulating layer is provided such that its height from the lower surface of the third lower electrode is the same as its height from the lower surface of the second lower electrode. Display device.

Images