Holding device

Abstract

According to this disclosure, a holding device capable of protecting the bonding layer when used at extremely low temperatures can be provided. [Solution] The holding device of the present disclosure comprises a plate-shaped member 10 having a first surface 10A for holding an object W and a second surface 10B located on the opposite side of the first surface 10A; a base member 20 disposed on the second surface 10B side of the plate-shaped member 10; a heater 50 having a resistance heating element; a bonding layer 30 joining the plate-shaped member 10 and the base member 20; and an annular sealing material 40 disposed adjacent to the bonding layer 30 to seal the space between the plate-shaped member 10 and the base member 20, wherein the heater 50 is disposed inside the sealing material 40 or in the vicinity of the sealing material 40.

Description

Technical Field

[0001] The present disclosure relates to a holding device.

Background Art

[0002] As an example of a holding device, a wafer support member that is an electrostatic chuck described in the following Patent Document 1 is known. This wafer support member includes: a plate-shaped ceramic body having a mounting surface that supports a semiconductor wafer as a workpiece; an electrostatic chuck section provided with an electrode on the other main surface or inside the electrode; and a base section bonded to the electrostatic chuck section via an adhesive layer. This wafer support member is characterized in that a recess is formed in a peripheral portion of the adhesive layer, and an annular protective member is disposed in the recess so as to press a wall surface of the recess.

Prior Art Literature

Patent Literature

[0003]

Patent Document 1

Summary of the Invention

Problem to be Solved by the Invention

[0004] From the viewpoint of preventing exposure to process gas and plasma in semiconductor manufacturing processes, and in recent years, there has been a need for lower temperatures in semiconductor processes, and from the viewpoint of preventing functional degradation of the adhesive layer in low-temperature environments, a protective member is disposed at the peripheral portion of the adhesive layer. In order to prevent functional degradation of the adhesive layer even in low-temperature environments, sealing performance of the protective member is also required. When an adhesive layer containing an adhesive is exposed to a plasma atmosphere and corrosion progresses, there is a risk that heat transfer characteristics between the plate-shaped ceramic body and the base portion may be lost. For this reason, a protective member for protecting the adhesive layer is used. However, when electrostatic chucks are used in semiconductor processes at extremely low temperatures, even with a heater, the protective element may be exposed to temperatures below its own glass transition point, preventing it from fully performing its protective function. [Means for solving the problem]

[0005] The holding device of the present disclosure comprises a plate-shaped member having a first surface for holding an object and a second surface located opposite to the first surface; a base member disposed on the second surface side of the plate-shaped member; a heater having a resistance heating element; a bonding layer joining the plate-shaped member and the base member; and an annular sealing material disposed adjacent to the bonding layer and sealing the space between the plate-shaped member and the base member, wherein the heater is disposed inside the sealing material or in the vicinity of the sealing material, at least one of the above. [Effects of the Invention]

[0006] According to this disclosure, a holding device capable of protecting the bonding layer when used at extremely low temperatures can be provided. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic perspective view showing a partially cut electrostatic chuck according to Embodiment 1. [Figure 2] Figure 2 is a schematic cross-sectional view showing a part of the internal structure of the electrostatic chuck according to Embodiment 1, cut in the Z-axis direction. [Figure 3] Figure 3 is a schematic cross-sectional view showing a part of the internal structure of the electrostatic chuck according to Embodiment 2, cut in the Z-axis direction. [Figure 4] Figure 4 is a schematic cross-sectional view showing a part of the internal structure of the electrostatic chuck according to Embodiment 3, cut in the Z-axis direction. [Figure 5] Figure 5 is a schematic cross-sectional view showing a part of the internal structure of the electrostatic chuck according to Embodiment 4, cut in the Z-axis direction. [Figure 6]Figure 6 is a schematic cross-sectional view showing a part of the internal structure of the electrostatic chuck according to Embodiment 5, cut in the Z-axis direction. [Modes for carrying out the invention]

[0008] [Description of Embodiments in this Disclosure] First, the embodiments of this disclosure will be listed and described. (1) The holding device of the present disclosure comprises a plate-shaped member having a first surface for holding an object and a second surface located opposite to the first surface; a base member disposed on the second surface side of the plate-shaped member; a heater having a resistance heating element; a bonding layer for joining the plate-shaped member and the base member; and an annular sealing material disposed adjacent to the bonding layer for sealing the space between the plate-shaped member and the base member, wherein the heater is disposed inside the sealing material or in the vicinity of the sealing material, at least one of the above.

[0009] The holding device is generally installed in a chamber that is subjected to a process gas atmosphere, which is a reactive gas. The sealing material has the function of protecting the bonding layer from the process gas in the chamber. In the above holding device, the heater is disposed inside the sealing material or at least near the sealing material. Therefore, even if the environment inside the chamber becomes below the glass transition temperature of the sealing material, for example, the sealing material can be heated so that it does not fall below the glass transition temperature. Thus, the sealing function of the sealing material is not lost, and the heat transfer characteristics of the bonding layer can be maintained.

[0010] (2) In the holding device described in (1), it is preferable that the heater, which is disposed near the sealing material, is disposed inside the sealing material.

[0011] Since the heater is located inside the sealant, the sealant can be heated to any desired temperature from the inside. This allows the sealant to maintain its temperature even when the chamber environment is below the glass transition point of the sealant. Therefore, the sealing function of the sealant is not lost, and the heat transfer characteristics of the bonding layer protected by the sealant can be maintained.

[0012] (3) In the holding device described in (1) or (2), the heater disposed near the sealing material is preferably disposed on the plate-shaped member.

[0013] Since the heater is installed on the plate-shaped member, the heater or sealing material can be adjusted to any position, and the sealing material can be heated to any temperature. This allows the sealing material to remain below its glass transition temperature even when the environment inside the chamber is below the glass transition temperature of the sealing material.

[0014] (4) In the holding device described in any one of (1) to (3), the heater disposed near the sealing material is preferably disposed on the base member.

[0015] Since the heater is installed in the base member, the heater or sealing material can be adjusted to any position, and the sealing material can be heated to any temperature. This allows the sealing material to remain below its glass transition temperature even when the environment inside the chamber is below the glass transition temperature of the sealing material.

[0016] (5) In the holding device described in any one of (1) to (4), the base member preferably includes a metal material, an insulating layer is formed on the outer periphery of the second surface side of the base member, and the heater is preferably disposed inside the insulating layer.

[0017] An outer peripheral portion of a base member containing a metal material may be directly exposed to a process gas. Forming an insulating layer on such an exposed outer peripheral portion of the base member can protect a heater provided inside the insulating layer. Further, after adjusting the position of the heater or a sealing material to a desired position, the sealing material can be heated to an arbitrary temperature. Accordingly, even when the inside of the chamber is under an environment at a temperature equal to or lower than the glass transition point of the sealing material, the heater in the insulating layer can sufficiently function to a certain extent, and can heat the sealing material such that the temperature of the sealing material does not fall below the glass transition point.

[0018] (6) In the holding device according to any one of (1) or (5), a coolant flow path and a heat insulating layer having a predetermined size are formed inside the base member, and the heat insulating layer is preferably disposed between the coolant flow path and the sealing material.

[0019] The holding device is generally installed in a chamber that has an atmosphere of a process gas which is a reactive gas. The sealing material has a function of protecting a bonding layer from the process gas in the chamber. In the holding device described above, the coolant flow path and the heat insulating layer are formed inside the base member, and the heat insulating layer is disposed between the coolant flow path and the sealing material. Therefore, for example, even when the inside of the chamber is under an environment at a temperature equal to or lower than the glass transition point of the sealing material, heat dissipation can be reduced such that the temperature of the sealing material does not fall below the glass transition point. Accordingly, the sealing function of the sealing material is not lost, and the heat transfer characteristic provided by the bonding layer can be maintained.

[0020] [Details of Embodiment 1 of the Present Disclosure] Specific examples of Embodiment 1 of the present disclosure will be described with reference to FIGS. 1 and 2. It should be noted that the present disclosure is not limited to these examples, and is defined by the claims, and is intended to include all modifications within the scope and meaning equivalent to the claims. In the following description, for multiple identical components, reference numerals may be assigned to only some components, while the reference numerals for others may be omitted. In this specification, the configuration of the holding device is described with the positive Z-axis direction as the upward direction, the negative Z-axis direction as the downward direction, and the XY plane direction as the horizontal direction; however, the actual usage embodiment of the holding device may have a different configuration. Furthermore, in this specification, “orthogonal” and “parallel” also include arrangements that are substantially perceived as orthogonal or parallel. In this specification, “opposing” means that faces or members are facing each other, including not only when they are completely facing each other, but also when they are partially facing each other. In this specification, “opposing” includes not only when two members are separated from each other, but also when two members are in contact with each other.

[0021] <Electrostatic Chuck> The holding device of this disclosure is an electrostatic chuck 100 capable of adsorbing and holding an object such as a semiconductor wafer or a glass substrate (hereinafter referred to as "wafer W"). The electrostatic chuck 100 is attached, for example, to a processing chamber of a semiconductor manufacturing apparatus (not shown) and used to perform various processes (film deposition, etching, etc.) on the wafer W using plasma. The electrostatic chuck 100 is designed to adsorb and hold the wafer W by electrostatic attraction.

[0022] As shown in Figure 1, the electrostatic chuck 100 comprises a plate-shaped member 10, a base member 20, a bonding layer 30, and a sealing material 40. The plate-shaped member 10 and the base member 20 are arranged parallel to each other in the vertical direction (the Z-axis direction in Figure 1, which is an example of a first direction). The plate-shaped member 10 and the base member 20 are joined by the bonding layer 30. The bonding layer 30 is positioned between the lower surface of the plate-shaped member 10 and the upper surface of the base member 20. The sealing material 40 is positioned adjacent to the outer circumferential surface of the bonding layer 30, and the sealing material 40 is also sandwiched between the plate-shaped member 10 and the base member 20. The sealing material 40 suppresses the deterioration of the bonding layer 30.

[0023] The sealing material 40 seals (encases) the outer circumference between the plate-shaped member 10 and the base member 20. The bonding layer 30 is surrounded in an annular shape by the sealing material 40. The bonding layer 30 contributes to the thermal conductivity between the plate-shaped member 10 and the base member 20. As the sealing material 40, an O-ring made of, for example, perfluoroelastomer may be used.

[0024] <Plate-shaped member> The plate-shaped member 10 comprises an insulator 13 made of ceramics and a chuck electrode 14 provided inside the insulator 13. The plate-shaped member 10 is an insulating member mainly composed of ceramics. In this embodiment, the plate-shaped member 10 is made of alumina. In this specification, the main component means the component with the highest content (weight percentage) (the same applies hereinafter). In other embodiments, the plate-shaped member 10 may be made of other ceramics such as aluminum nitride (AlN).

[0025] As shown in Figures 1 and 2, the plate-shaped member 10 has an upper portion 11 and a lower portion 12 with a larger diameter than the upper portion 11. The upper portion 11 and the lower portion 12 are arranged coaxially in the Z-axis direction. The outer circumferential surfaces of the upper portion 11 and the lower portion 12 are connected in a stepped manner. The upper surface of the upper portion 11 is a first surface 10A perpendicular to the Z-axis direction (an example of a first direction). The first surface 10A of the upper portion 11 is higher than the upper surface of the lower portion 12 of the plate-shaped member 10. The first surface 10A is a circular plane and is used as a table on which the wafer W is placed and functions as a suction surface for holding the wafer W. A jig (not shown) for fixing, for example, a focus ring or an electrostatic chuck 100 is designed to engage with the upper surface of the lower portion 12 of the plate-shaped member 10. For example, the shape of the plate-like member 10 may be such that the upper part 11 and the lower part 12 have the same diameter and are arranged coaxially. Also, for example, the upper part 11 of the plate-like member 10 may have a larger diameter than the lower part 12.

[0026] In this embodiment, the plate-shaped member 10 has a smaller diameter than the base member 20 and has a different diameter, but it may have the same diameter or a larger diameter. Also, in this embodiment, the base member 20 is shown to be thicker in the downward direction than the plate-shaped member 10, but the plate-shaped member 10 and the base member 20 may have the same thickness in the downward direction, or the base member 20 may be thinner in the downward direction than the plate-shaped member 10.

[0027] As shown in Figures 1 and 2, in the plate-shaped member 10, the surface opposite to the first surface 10A (i.e., the bottom surface) is the second surface 10B. The second surface 10B is joined to the base member 20 via a bonding layer 30. The first surface 10A and the second surface 10B are surfaces that extend in the horizontal direction. The second surface 10B is positioned opposite the upper surface of the base member 20. For example, two plate-shaped members 10 may exist in a state where they are arranged parallel to each other in the vertical direction via the bonding layer 30. Alternatively, for example, the second surface 10B of either of the two plate-shaped members 10 may be positioned opposite the upper surface of the base member 20 (the third surface 20A, which will be described later) via the bonding layer 30.

[0028] A chuck electrode 14 made of a conductive material (e.g., tungsten, molybdenum, platinum, etc.) is positioned on the first surface 10A side of the upper part 11 of the plate-shaped member 10. The shape of the chuck electrode 14 in the Z-axis direction is, for example, approximately circular. When a voltage is applied to the chuck electrode 14 from a chuck power supply (not shown) via a terminal for the chuck electrode (not shown), an electrostatic attraction force is generated, and the wafer W is attracted and fixed to the first surface 10A of the plate-shaped member 10 by this electrostatic attraction force. The chuck electrode 14 only needs to be positioned inside the insulator 13 of the plate-shaped member 10.

[0029] For example, the chuck electrode 14 may be bipolar or unipolar. Also, for example, a heater (not shown) may be provided inside the plate-shaped member 10 or on the second surface 10B, which is composed of a resistive heating element made of a conductive material (e.g., tungsten, molybdenum, platinum, etc.) for heating the wafer W that is adsorbed and fixed to the first surface 10A of the plate-shaped member 10 in order to control the temperature distribution of the wafer W.

[0030] <Base component> As shown in Figure 1, the base member 20 has a base member body 21 and an insulating layer 24. The base member 20 is a disc-shaped member. The base member 20 is designed to support the entire plate-shaped member 10. The diameter of the base member 20 may be, for example, about 220 mm to 550 mm (usually about 220 mm to 350 mm), and the thickness of the base member 20 in the downward direction may be, for example, about 20 mm to 40 mm.

[0031] The base member body 21 is mainly composed of conductive metallic materials such as metals (titanium, aluminum) or metal alloys (aluminum alloys). The base member body 21 may also be mainly composed of a composite material of metal and ceramics (Al-SiC).

[0032] As shown in Figure 2, the base member 20 has a third surface 20A located on the side facing the plate-shaped member 10, and a fourth surface 20B located on the opposite side from the third surface 20A. The third surface 20A and the fourth surface 20B are both horizontally extending surfaces. The third surface 20A is located on the upper side of the base member 20, and the fourth surface 20B is located on the lower side of the base member 20. The third surface 20A is positioned opposite the second surface 10B, which is the lower surface of the plate-shaped member 10. The third surface 20A of the base member 20 is joined to the second surface 10B of the plate-shaped member 10 by a bonding layer 30.

[0033] The base member body 21 has a refrigerant flow path 22 and an insertion hole 23. As shown in Figures 1 and 2, the base member body 21 is equipped with a refrigerant flow path 22 through which the refrigerant flows. The refrigerant flow path 22 is provided inside the base member body 21 so as to be aligned with the XY plane. The refrigerant flow path 22 is connected to a refrigerant circulation device (not shown) via piping or the like (not shown). The refrigerant circulation device is configured to circulate refrigerants such as fluorinated inert liquid, water, and liquid nitrogen through the refrigerant flow path 22.

[0034] When processing a wafer W held in the plate-shaped member 10 of the electrostatic chuck 100 using plasma, heat is supplied to the wafer W from the plasma, causing the temperature of the wafer W to rise. By flowing a refrigerant (for example, liquid nitrogen, etc.) through the refrigerant channel 22 provided in the base member 20, the base member 20 is heated. Then, the plate-shaped member 10 is heated by the heat dissipation between the base member 20 and the plate-shaped member 10 via the bonding layer 30, and the wafer W held on the first surface 10A of the plate-shaped member 10 is heated. This enables temperature control of the wafer W.

[0035] Furthermore, in the electrostatic chuck 100, the wafer W held on the first surface 10A is heated by the plasma, or, if there is a chuck electrode 14 built into the plate-shaped member 10 or a heater provided below the chuck electrode 14 for controlling the temperature distribution of the wafer W, it is heated by the heater. On the other hand, the temperature of the wafer W held on the first surface 10A decreases in accordance with the temperature in the plasma atmosphere, or it is heated by the heat dissipation mechanism of the base member 20. By adjusting the balance between heating and heat dissipation, the temperature of the wafer W is controlled to a desired temperature. In addition to the configuration in which the base member 20 has a refrigerant flow path 22 inside, even when a base member is used in which a refrigerant flow path 22 is not formed inside the base member 20, the base member 20 may be given a heating function by heating the base member 20 from the outside.

[0036] In this embodiment, a heater 50 for the sealing material is disposed inside the sealing material 40. The base member 20 has an insertion hole 23 that penetrates vertically from the third surface 20A to the fourth surface 20B. The wiring 51 of the heater 50 for the sealing material, which is disposed inside the sealing material 40, is inserted through this insertion hole 23. As a result, the heater and wiring for the sealing material are housed inside the insertion hole 23, preventing them from being exposed to plasma or process gas.

[0037] As described above, the base member 20 comprises a base member body 21 and an insulating layer 24 formed on the outer surface of the base member body 21. The base member 20 includes a conductive metallic material. Preferably, the outer periphery of the surface of the base member 20 that is directly exposed to plasma or process gas is covered with an insulating layer 24 formed by an insulating film, which is a film for electrical insulation. By having an insulating layer 24, the outer periphery is insulated and corrosion of the outer periphery of the base member 20 can be prevented.

[0038] The insulating layer 24 is composed of an insulating film having insulating properties using a ceramic material such as alumina (Al2O3) or yttrium oxide (Y2O3). For example, the insulating layer 24 may be composed of a silicon oxide film or a silicon nitride film. However, the material of the insulating layer 24 is not limited to these, and a non-conductive material can be used. The insulating layer 24 only needs to have an insulating layer that provides electrical insulation.

[0039] It is desirable that the insulating layer 24 be formed in areas that are directly exposed to plasma or process gas. For example, the insulating layer 24 may be formed on the second surface 10B of the plate-shaped member 10, on the third surface 20A side of the base member 20, on the outer periphery extending from the third surface 20A to the fourth surface 20B, or on the fourth surface 20B.

[0040] <Joining layer> The bonding layer 30 is sandwiched between the second surface 10B of the plate-shaped member 10 and the third surface 20A of the base member 20, and is spread out in a layered manner. The second surface 10B of the plate-shaped member 10 and the third surface 20A of the base member 20 are thermally connected via the bonding layer 30. Preferably, the bonding layer 30 has high adhesive strength to both the plate-shaped member 10 and the base member 20, as well as high heat resistance and thermal conductivity. The thickness of the bonding layer 30 (dimension in the Z-axis direction) is, for example, about 0.1 to 2.0 mm. The thickness of the bonding layer 30 may be 0.1 mm or more, for example, from the viewpoint of ensuring the flexibility and strength of the bonding layer 30.

[0041] The bonding layer 30 contains an adhesive. If an adhesive is included, the adhesive is made of a silicone resin. Alternatively, if an adhesive is included, the adhesive may be made of, for example, an acrylic resin or an epoxy resin.

[0042] The electrostatic chuck 100 has a sealing material 40 surrounding the outer surface of the bonding layer 30. For example, if process gas or plasma passes through the space between the second surface 10B and the third surface 20A and directly corrodes the outer surface of the bonding layer 30, corrosion of the bonding layer 30 may occur and affect its heat transfer characteristics. However, by sealing the space between the second surface 10B and the third surface 20A using the sealing material 40 and preventing the intrusion of process gas, etc., corrosion of the bonding layer 30 is suppressed. Therefore, the sealing material 40 functions as a protective member to protect the bonding layer 30, and when protected by the sealing material 40, corrosion of the bonding layer 30 is suppressed, and the bonding function of joining the members of the bonding layer 30 and its heat transfer characteristics can be maintained.

[0043] <Sealant> The sealing material 40 only needs to be able to cover the outer circumference of the bonding layer 30. In this embodiment, a space is provided between the sealing material 40 and the bonding layer 30 in Figures 1 and 2, but there may be no space between the sealing material 40 and the bonding layer 30, and they may be in close contact with each other.

[0044] The sealant heater 50 is equipped with a resistive heating element that generates heat when a voltage is applied and current flows. The sealant heater 50 in this embodiment is located inside the sealant 40. The sealant heater 50 is used to prevent the temperature of the sealant 40 from falling below its glass transition temperature. For example, the sealant heater 50 may be bipolar or unipolar. Also, for example, the sealant heater 50 is made of a conductive material (e.g., tungsten, molybdenum, platinum, etc.). The sealant heater 50 corresponds to the heater of this disclosure.

[0045] A pair of wires 51 are connected to the heating element of the resistance heating element. The sealant heater 50 is positioned inside the sealant 40 and, in a plan view, is arranged to surround the outer surface of the bonding layer 30 in an annular manner. The pair of wires 51 are inserted through an insertion hole 23 provided at any point inside the base member 20. The pair of wires 51 are connected to an external power source (not shown). When power is supplied to the sealant heater 50 from the power source (not shown), current flows and heat is generated, warming the sealant 40 from the inside.

[0046] This can prevent the sealing material 40 from falling below its glass transition temperature. As the heater 50 for the sealing material, metallized material with a sintered conductive layer printed with conductive paste, metal foil, metal mesh, etc., may be used.

[0047] For example, the glass transition temperature of the sealing material 40 in this embodiment is approximately -10°C to -20°C, and it is an O-ring made of a material such as a perfluoroelastomer that has plasma resistance, corrosion resistance, and elasticity. The sealing material 40 may be something other than an O-ring, such as a ring-shaped sealing member or a gasket cut into an annular shape. Furthermore, the sealing material 40 may be made of other corrosion-resistant materials.

[0048] For example, when a refrigerant such as liquid nitrogen flows through the refrigerant channel 22, the electrostatic chuck 100 may be used in a semiconductor process cycle that has a temperature range from extremely low temperatures of approximately -70°C to -40°C to high temperatures of approximately 80°C. In such cases, for example, if the electrostatic chuck 100 is cooled to extremely low temperatures (e.g., approximately -60°C) due to heat dissipation from the refrigerant channel 22, and the sealing material 40 falls below the glass transition temperature of the sealing material 40 itself, the sealing material 40, which has the function of protecting the outer periphery of the bonding layer 30, hardens, which may reduce the sealing performance of the sealing material 40. Due to the reduced sealing performance of the sealing material 40, corrosion of the bonding layer 30, including the adhesive, progresses due to the intrusion of plasma and process gases, and a gap may be created, potentially leading to a loss of thermal conductivity between the plate-shaped member 10 and the base member 20.

[0049] However, even under these conditions, by placing a heater 50 for the seal material inside the seal material 40 and adjusting it so that the temperature does not fall below the glass transition point of the seal material 40, the original sealing function of the seal material 40 can be maintained. This preserves the bonding ability of the bonding layer 30, prevents delamination at the interface, and maintains the heat transfer characteristics.

[0050] <Method for manufacturing an electrostatic chuck> The above describes the configuration of the electrostatic chuck 100 of this embodiment 1, and below, an example of a method for manufacturing the electrostatic chuck 100 will be described. The method for manufacturing the electrostatic chuck 100 of this embodiment includes a plate-shaped member forming step of forming a plate-shaped member 10, a base member forming step of forming a base member 20, a step of joining the plate-shaped member 10 and the base member 20, and a step of arranging a sealing material 40.

[0051] In the process of forming the plate-shaped member 10, the plate-shaped member 10 with the above configuration can be produced, for example, by creating multiple green sheets made of ceramics, filling a predetermined ceramic green sheet with metallizing paste and performing processing such as printing, heat-pressing these ceramic green sheets together, cutting and other processing, and then firing. After firing, the plate-shaped member 10 is formed by further polishing and other processing.

[0052] As shown in Figure 3, when a heater 250 for sealing material is formed inside the plate-shaped member 210, it can be manufactured by filling a predetermined ceramic green sheet with metallizing paste, performing printing or other processing, and then firing it.

[0053] The manufacturing method for the base member 20 is essentially the same as that for conventional products. Therefore, a detailed explanation will be omitted. The manufacturing process for the base member 20 includes preparing a metal disc-shaped member that will form the base member body 21 of the base member 20, and then forming an insulating layer 24 by thermal spraying a ceramic material such as alumina (Al2O3) or yttrium oxide (Y2O3).

[0054] As shown in Figure 4, when a heater 350 for sealing material is formed within the insulating layer 324, it can be manufactured by filling a metallizing paste into a predetermined position within the insulating layer 324, performing processing such as printing, and then firing.

[0055] Furthermore, as shown in Figures 5 and 6, when forming the thermal insulation layers 61, 62, 63, and 64 within the base members 420 and 520, the manufacturing process of the base members 420 and 520 includes a step for forming each of the thermal insulation layers 61, 62, 63, and 64.

[0056] After the plate-shaped member 10 and the base member 20 are manufactured, they are joined together using the bonding layer 30. The joining of the plate-shaped member 10 and the base member 20 using the bonding layer 30 is basically the same as the joining in conventional products. Therefore, a detailed explanation is omitted. After the bonding layer 30 is formed, a sealing material 40 containing a sealing material heater 50 is fitted in an annular shape along the outer circumference of the bonding layer 30 as a protective member for the bonding layer 30. Each wire 51 of the sealing material heater 50 is passed through the insertion hole in the base member 20. In this way, the electrostatic chuck 100 is manufactured.

[0057] [Details of Embodiment 2 of this Disclosure] Next, a specific example of Embodiment 2 of this disclosure will be described with reference to Figure 3. The electrostatic chuck 200 of Embodiment 2 is a modified version of Embodiment 1 in which the arrangement of the sealing material heater 50 is changed. Components that are the same as those in Embodiment 1 may be denoted by the same reference numerals and their description may be omitted.

[0058] The electrostatic chuck 200 of this embodiment includes a plate-shaped member 210 corresponding to the plate-shaped member 10 of Embodiment 1, a base member 20, a bonding layer 30, a sealing material 240 corresponding to the sealing material 40 of Embodiment 1, and an insulating layer 24. However, unlike Embodiment 1, the sealing material heater 250 is not built into the sealing material 240. The sealing material heater 250 corresponds to the sealing material heater 50 of Embodiment 1. In Embodiment 2, the sealing material heater 250 is formed on the plate-shaped member 210. The sealing material heater 250 corresponds to the heater of this disclosure.

[0059] The plate-shaped member 210 has an upper portion 211 having a first surface 210A and a lower portion 212 having a second surface 210B. The first surface 210A is the upper surface of the upper portion 211 of the plate-shaped member 210. The second surface 210B is the lower surface of the lower portion 212. The second surface 210B is positioned opposite the third surface 20A, which is the upper surface of the base member 20. The third surface 20A of the base member 20 is joined to the second surface 210B of the plate-shaped member 210 by a bonding layer 30. The upper surface of the lower portion 212 is the fifth surface 212A. The outer peripheral surface 215 of the upper portion 211 and the outer peripheral surface 216 of the lower portion 212 are connected via the fifth surface 212A. In other words, a step is provided on the outer circumference of the plate-shaped member 210 at the position of the fifth surface 212A. The first surface 210A of the upper portion 211 is higher than the fifth surface 212A of the lower portion 212.

[0060] The fifth surface 212A protrudes radially outward (horizontally) from the outer peripheral surface 215 of the upper portion 211 of the plate-shaped member 210. The outer peripheral surface 216 of the lower portion 212 is located radially outward from the outer peripheral surface 215 of the upper portion 211. Therefore, a step is formed between the outer peripheral surface 216 of the lower portion 212 and the outer peripheral surface 215 of the upper portion 211.

[0061] The lower portion 212 also has an inner portion 217 which is in contact with the bonding layer 30 and an outer portion 218 which is in contact with the sealing material 240. The inner portion 217 and the outer portion 218 are separated in the horizontal direction at the position of the outer peripheral surface 231 of the bonding layer 30. The first surface 210A, the fifth surface 212A, and the second surface 210B of the plate-shaped member 210 are each surface portions that extend in the horizontal direction.

[0062] The plate-shaped member 210 has a sealing heater 250 on the outer part 218 of the lower part 212. The sealing heater 250 is built into the outer part 218 of the lower part 212. The sealing heater 250 is positioned near the sealing material 240.

[0063] "Nearby" includes a state in which the sealing material 240 and the sealing material heater 250 are in direct contact, and a state in which they are indirectly in contact via the insulator 13. Furthermore, the state of indirect contact refers to a state in which the sealing material 240 and the sealing material heater 250 are positioned far enough apart that the sealing material 240 can perform its function of warming the sealing material 240.

[0064] Furthermore, the term "nearby" may also include cases where the sealant heater 250 is positioned in a range that does not exceed the thickness of the outer portion 218 of the lower portion 212 in the Z-axis direction. For example, the term "nearby" preferably refers to a horizontal range where the sealant heater 250 is positioned from the outer peripheral surface 231 of the bonding layer 30 to the outer peripheral surface 216 of the lower portion 212. Alternatively, the sealant heater 250 may be positioned in a range that achieves the purpose of this disclosure, such as being able to warm the sealant 240, and may be configured such that all or part of the sealant heater 250 extends horizontally towards the inner portion 217. The sealant heater 250 may also be positioned exposed on the second surface 210B of the plate-shaped member 210, for example.

[0065] As described above, in this embodiment, since the heater 250 for the sealing material is provided on the plate-shaped member 210, the sealing material 240 can be heated to any desired temperature. This allows the chamber to be adjusted so that the sealing material 240 does not reach a temperature below the glass transition point, even if the environment inside the chamber is below the glass transition point of the sealing material 240.

[0066] [Details of Embodiment 3 of this Disclosure] Next, a specific example of Embodiment 3 of this disclosure will be described with reference to Figure 4. The electrostatic chuck 300 of Embodiment 3 is a modified version of Embodiment 1 in which the arrangement of the sealing material heater 50 has been changed. Components that are the same as those in Embodiment 1 may be denoted by the same reference numerals and their description may be omitted.

[0067] The electrostatic chuck 300 of this embodiment comprises a plate-shaped member 10, a base member 320 corresponding to the base member 20 of Embodiment 1, a bonding layer 30, and a sealing material 340 corresponding to the sealing material 40 of Embodiment 1. However, unlike Embodiment 1, the sealing material heater 350 is not built into the sealing material 340. The sealing material heater 350 corresponds to the sealing material heater 50 of Embodiment 1. In Embodiment 3, the sealing material heater 350 is formed inside the base member 320. The base member 320 comprises a base member body 321 corresponding to the base member body 21 of Embodiment 1, and an insulating layer 324 corresponding to the insulating layer 24 of Embodiment 1. The sealing material heater 350 corresponds to the heater of this disclosure.

[0068] The base member 320 has a third surface 320A located on the plate-shaped member 10 side and a fourth surface 320B located on the opposite side of the third surface 320A. The base member body 321 has an upper part 311 having the third surface 320A and a lower part 312 having the fourth surface 320B. The third surface 320A is the upper surface of the upper part 311 of the base member 320. The fourth surface 320B is the lower surface of the lower part 312. The third surface 320A is located opposite the second surface 10B, which is the lower surface of the plate-shaped member 10. The third surface 320A of the base member 320 is joined to the second surface 10B of the plate-shaped member 10 by a bonding layer 30. The upper surface of the lower part 312 is the sixth surface 312A. The outer circumferential surface 315 of the upper portion 311 and the outer circumferential surface 316 of the lower portion 312 are connected via the sixth surface 312A. In other words, a step is provided on the outer circumference of the base member body 321 at the position of the sixth surface 312A. The third surface 320A of the upper portion 311 is higher than the sixth surface 312A of the lower portion 312.

[0069] The sixth surface 312A protrudes radially outward (horizontally) from the outer peripheral surface 315 of the upper portion 311 of the base member 320. The outer peripheral surface 316 of the lower portion 312 is located radially outward from the outer peripheral surface 315 of the upper portion 311 of the base member 320. Therefore, a step is formed between the outer peripheral surface 316 of the lower portion 312 and the outer peripheral surface 315 of the upper portion 311. The third surface 320A, the sixth surface 312A, and the fourth surface 320B of the base member 320 are each surfaces that extend in the horizontal direction.

[0070] The insulating layer 324 has an insulating function and is preferably formed in areas of the base member's outer circumferential surface that are directly exposed to plasma or process gas. The insulating layer 324 comprises an insulating layer body 324A disposed on the outer circumferential side of the lower portion 312 and a heater arrangement portion 324B disposed on the outer circumferential side of the upper portion 311. The inner circumferential surface of the heater arrangement portion 324B is located radially inward from the inner circumferential surface of the insulating layer body 324A. The heater arrangement portion 324B is in contact with the outer circumferential surface of the upper portion 311 and the sixth surface 312A. The insulating layer body 324A is in contact with the outer circumferential surface of the lower portion 312. The heater arrangement portion 324B is formed on the second surface 10B side of the plate-shaped member 10 (the third surface 320A side of the base member 320), and the insulating layer body 324A is formed on the outer circumferential surface extending from the third surface 320A to the fourth surface 320B.

[0071] The heater 350 for the sealing material is located inside the heater arrangement section 324B. That is, the heater 350 for the sealing material is located inside the insulating layer 324, near the sealing material 340.

[0072] "Nearby" includes a state in which the sealing material 340 and the sealing material heater 350 are in direct contact, and a state in which they are indirectly in contact through the ceramic material constituting the insulating layer 324. Furthermore, the state of indirect contact refers to a state in which the sealing material 340 and the sealing material heater 350 are positioned far enough apart to allow the sealing material 340 to function as a heater.

[0073] Furthermore, the term "nearby" may include cases where the sealing material heater 350 is positioned in a range that does not exceed the thickness of the heater arrangement portion 324B in the Z-axis direction. For example, the term "nearby" preferably refers to a horizontal range from the outer peripheral surface 331 of the bonding layer 30 to the outer peripheral surface 316 of the lower portion 312. Alternatively, the sealing material heater 350 may be positioned radially outward in the heater arrangement portion 324B, as long as it is within a range that achieves the objective of this disclosure, such as being able to warm the sealing material 340. The sealing material heater 350 may also be positioned exposed on the third surface 320A of the base member 320, for example.

[0074] As described above, in this embodiment, since the sealant heater 350 is disposed on the base member 320, the nearby sealant 340 can be heated to any desired temperature. Furthermore, if the sealant heater 350 is disposed inside the insulating layer 324, the sealant heater 350 is protected while the nearby sealant 340 can be heated to any desired temperature. This makes it possible to adjust the environment inside the chamber so that the sealant 340 does not fall below its glass transition temperature, even if the environment inside the chamber is below the glass transition temperature of the sealant 340.

[0075] [Details of Embodiment 4 of this Disclosure] Next, a specific example of Embodiment 4 of this disclosure will be described with reference to Figure 5. The electrostatic chuck 400 of Embodiment 4 is modified by adding heat insulating layers 61 and 62 to the base member 20 of Embodiment 1. Components that are the same as those in Embodiment 1 may be denoted by the same reference numerals and their description may be omitted.

[0076] The electrostatic chuck 400 of this embodiment comprises a plate-shaped member 10, a base member 420 corresponding to the base member 20 of Embodiment 1, a bonding layer 30, and a sealing material 40. Similar to Embodiment 1, the sealing material heater 50, which is disposed near the sealing material 40, is disposed inside the sealing material 40.

[0077] Furthermore, instead of the sealant heater 50 being located inside the sealant 40, for example, the sealant heater 250 may be located on the plate-shaped member 210, similar to Embodiment 2. Also, instead of the sealant heater 50 being located inside the sealant 40, for example, the sealant heater 350 may be located on the base member 320, similar to Embodiment 3. Therefore, the sealant heater 50 in Embodiment 4 is located inside the sealant 40 as shown in Embodiment 1, or in the vicinity of at least one of the sealants 240 and 340 as shown in Embodiment 2 or Embodiment 3.

[0078] In Embodiment 4, the base member 420 has a base member body 421 corresponding to the base member body 21 of Embodiment 1, and an insulating layer 24. The base member body 421 has a refrigerant flow path 422 and heat insulating layers 61, 62. Inside the base member body 421, the refrigerant flow path 422 and heat insulating layers 61, 62 having a predetermined size are formed.

[0079] The base member 420 has a third surface 420A located on the upper side of the base member 420 and on the side of the plate-shaped member 10, and a fourth surface 420B located on the opposite side of the third surface 420A. The third surface 420A and the fourth surface 420B are surfaces that extend horizontally. In the cross-sectional view of the electrostatic chuck 400 shown in Figure 5, which is cut in the Z-axis direction and schematically shows a part of its internal structure, for the sake of explanation, the insulation layer on the left side of the figure is conveniently referred to as insulation layer 61, and the insulation layer on the right side of the figure is referred to as insulation layer 62. The insulation layers 61 and 62 are substantially the same in shape, size, and extent. The insulation layers 61 and 62 may be formed as a single unit or as separate units. Furthermore, the insulation layers 61 and 62 may be formed continuously along the refrigerant flow path 422, or, not limited to this, may be formed intermittently along the refrigerant flow path 422. The insulation layers 61 and 62 correspond to the insulation layers of this disclosure. If the insulation layer 62 has the same configuration as the insulation layer 61, the explanation may be omitted.

[0080] Each of the insulation layers 61 and 62 is formed on the third surface 420A side of the base member 420, of the third surface 420A and fourth surface 420B. Each of the insulation layers 61 and 62 is arranged in a pair in the horizontal direction inside the base member 420, for example. The insulation layer 61 has a predetermined size. The insulation layer 61 has, for example, a substantially rectangular shape. For the sake of explanation, the refrigerant flow paths 422 located at the outermost periphery in the horizontal direction are designated as 422a and 422b, respectively, and the refrigerant flow paths other than those located at the outermost periphery are designated as 422c, 422d, 422e, and 422f, respectively. The refrigerant flow path 422a is located closest to the insulation layer 61 compared to each of the refrigerant flow paths 422b, 422c, 422d, 422e, and 422f. The refrigerant flow path 422b is positioned closest to the insulation layer 62 compared to the other refrigerant flow paths 422a, 422c, 422d, 422e, and 422f.

[0081] The thermal insulation layer 61 is disposed between the refrigerant flow path 422 and the sealing material 40. For example, in detail, the thermal insulation layer 61 is placed between the refrigerant flow path 422a and the sealing material 40 located on the left side in the horizontal direction as shown. Alternatively, for example, the thermal insulation layer 61 may be placed between the center point of the contact surface between the sealing material 40 located on the left side in the horizontal direction as shown and the third surface 420A, and the line connecting the vertices of the radial outermost surface and the uppermost surface of the refrigerant flow path 422a.

[0082] The thermal insulation layer 61 is a space of a predetermined size and has a lower thermal conductivity than the base member 420. Therefore, the thermal insulation layer 61 has lower heat transfer characteristics than the base member 420 and functions as a thermal insulation layer inside the base member 420. Thus, the thermal insulation layer 61 is placed between the two members, the refrigerant flow path 422 and the sealing material 40, and exhibits a thermal insulation function. This makes it less likely or suppresses the occurrence of extreme heat dissipation in the refrigerant flow path 422 at the sealing material 40. The thermal insulation layer 61 with such thermal insulation function reduces or suppresses the heat dissipation from the refrigerant flow path 422 to the base member 420 between the thermal insulation layer 61 and the sealing material 40, thereby preventing the sealing material 40 from reaching a temperature below its glass transition point.

[0083] The statement that the heat insulating layer 61 is disposed between the two components, the refrigerant flow path 422 and the sealing material 40, includes, for example, a state in which the sealing material 40 and the heat insulating layer 61 are indirectly in contact via the base member body 421. Furthermore, the state of indirect contact means a state in which the sealing material 40 and the heat insulating layer 61 are positioned far enough apart that the sealing material 40 can be heated. The same applies not only when the heat insulating layers 61 and 62 are formed continuously along the refrigerant flow path 422, but also when they are formed intermittently along the refrigerant flow path 422.

[0084] Furthermore, for example in the Z-axis direction, the entire insulation layer 61 is positioned above the uppermost surface of the refrigerant flow path 422a. In the Z-axis direction, the entire insulation layer 61 is positioned between the third surface 420A and the fourth surface 420B, and the vertical height of the insulation layer 61 may be less than or equal to half the vertical height of the third surface 420A and the fourth surface 420B. In the Z-axis direction, the vertical height of the insulation layer 61 may be less than the vertical height of the refrigerant flow path 422a. In the horizontal direction, the entire insulation layer 61 is positioned from the outermost outer surface of the refrigerant flow path 422a to the outermost outer surface of the sealant 40 shown on the left side of the figure. In the horizontal direction, the width of the insulation layer 61 may be less than the horizontal width of the refrigerant flow path 422a. The insulation layer 62 is positioned between the refrigerant flow path 422b and the sealant 40 located closest to the refrigerant flow path 422b and on the right side of the figure in the horizontal direction. In this case, the explanation is omitted because it has the same configuration as the insulation layer 61.

[0085] Here, the insulation layers 61 and 62 are assumed to be in a vacuum. For example, each insulation layer 61 and 62 may be filled with an insulating material having a lower thermal conductivity than the material of the base member 420. Furthermore, for example, each insulation layer 61 and 62 may be filled with an air layer having a lower thermal conductivity than the material of the base member 420.

[0086] Furthermore, the six refrigerant flow paths 422a, 422b, 422c, 422d, 422e, and 422f arranged horizontally in the base member 420 shown in Figure 5 may be connected in a view along the Z-axis (plan view) and may be flow paths through which the same refrigerant flows, or they may be separate flow paths through which different refrigerants flow.

[0087] The sealant 40 is designed to be heated from the inside by the sealant heater 50 so that its temperature does not fall below its glass transition temperature. In addition, by placing the insulating layers 61 and 62 between each refrigerant flow path 422a and 422b and the sealant 40 located closest to each refrigerant flow path 422a and 422b, the heat dissipation function of the base member 420 from the refrigerant flow paths 422a and 422b inside the base member 420 can be reduced or suppressed. This prevents the sealant 40 from falling below its glass transition temperature.

[0088] In the electrostatic chuck 400, a refrigerant flow path 422 (422a) and an insulating layer 61 are formed inside the base member 420, and the insulating layer 61 is arranged between the refrigerant flow path 422 (422a) and the sealing material 40. Therefore, even if the environment inside the chamber becomes below the glass transition point of the sealing material 40, for example, the heat dissipation can be reduced or suppressed so that the sealing material 40 does not fall below the glass transition point. Consequently, the sealing function of the sealing material 40 is not lost, deterioration of the bonding layer 30 is suppressed, and the heat transfer characteristics of the bonding layer 30 are maintained.

[0089] [Details of Embodiment 5 of this Disclosure] Next, a specific example of Embodiment 5 of this disclosure will be described with reference to Figure 6. The electrostatic chuck 500 of Embodiment 5 is modified by adding heat insulating layers 63 and 64 to the base member 20 of Embodiment 1. Components that are the same as those in Embodiment 1 may be denoted by the same reference numerals and their description may be omitted.

[0090] The electrostatic chuck 500 of this embodiment comprises a plate-shaped member 10, a base member 520 corresponding to the base member 20 of Embodiment 1, a bonding layer 30, and a sealing material 40. Similar to Embodiment 1, the sealing material heater 50, which is disposed near the sealing material 40, is disposed inside the sealing material 40.

[0091] Furthermore, instead of the sealant heater 50 being located inside the sealant 40, for example, the sealant heater 250 may be located on the plate-shaped member 210, similar to Embodiment 2. Also, instead of the sealant heater 50 being located inside the sealant 40, for example, the sealant heater 350 may be located on the base member 320, similar to Embodiment 3. Therefore, the sealant heater 50 in Embodiment 5 is located inside the sealant 40 as shown in Embodiment 1, or in the vicinity of at least one of the sealants 240 and 340 as shown in Embodiment 2 or Embodiment 3.

[0092] In Embodiment 5, the base member 520 has a base member body 521 corresponding to the base member body 21 of Embodiment 1, and an insulating layer 24. The base member body 521 has a refrigerant flow path 522 and heat insulating layers 63, 64. Inside the base member body 521, the refrigerant flow path 522 and heat insulating layers 63, 64 having a predetermined size are formed.

[0093] The base member 520 has a third surface 520A located on the upper side of the base member 520 and on the side of the plate-shaped member 10, and a fourth surface 520B located on the opposite side of the third surface 520A. The third surface 520A and the fourth surface 520B are surfaces that extend horizontally. In the cross-sectional view of the electrostatic chuck 500 shown in Figure 6, which is cut in the Z-axis direction and schematically shows a part of its internal structure, for the sake of explanation, the insulation layer on the left side of the figure is conveniently referred to as insulation layer 63, and the insulation layer on the right side of the figure is referred to as insulation layer 64. The insulation layers 63 and 64 are substantially the same in shape, size, and extent. The insulation layers 63 and 64 may be formed as a single unit or as separate units. Furthermore, the insulation layers 63 and 64 may be formed continuously along the refrigerant flow path 522, or, not limited to this, may be formed intermittently along the refrigerant flow path 522. The insulation layers 63 and 64 correspond to the insulation layers of this disclosure. If the insulation layer 64 has the same configuration as the insulation layer 63, the explanation may be omitted.

[0094] Each of the insulation layers 63 and 64 is formed on the third surface 520A side of the third surface 520A and fourth surface 520B of the base member 520. Each of the insulation layers 63 and 64 is arranged, for example, in a pair in the horizontal direction inside the base member 520. The insulation layer 63 has a predetermined size. The insulation layer 63 has, for example, a substantially rectangular shape. The insulation layer 63 of Embodiment 5 has a larger cross-sectional area than the insulation layer 61 of Embodiment 4 and is arranged radially inward, further away from the sealing material 40 than in Embodiment 4. In Embodiment 5, since there is a wall on the outer circumference side of the insulation layer 63, when subjected to a load downward in the Z-axis direction, the strength of the upper part of the insulation layer 63 is higher than in Embodiment 4.

[0095] For the sake of explanation, we will refer to the refrigerant flow paths 522 located at the outermost periphery in the horizontal direction as 522a and 522b, respectively, and the refrigerant flow paths other than those located at the outermost periphery as 522c, 522d, 522e, and 522f, respectively. Refrigerant flow path 522a is located closest to the insulation layer 63 compared to each of the refrigerant flow paths 522b, 522c, 522d, 522e, and 522f. Refrigerant flow path 522b is located closest to the insulation layer 64 compared to each of the refrigerant flow paths 522a, 522c, 522d, 522e, and 522f.

[0096] The thermal insulation layer 63 is disposed between the refrigerant flow path 522 and the sealing material 40. For example, in detail, the thermal insulation layer 63 is placed between the refrigerant flow path 522a and the sealing material 40 located on the left side in the horizontal direction as shown. Alternatively, for example, the thermal insulation layer 63 may be placed between the center point of the contact surface between the sealing material 40 located on the left side in the horizontal direction as shown and the third surface 520A, and the line connecting the vertices of the outermost radial surface and the uppermost surface of the refrigerant flow path 522a.

[0097] The thermal insulation layer 63 is a space of a predetermined size and has a lower thermal conductivity than the base member 520. Therefore, the thermal insulation layer 63 has lower heat transfer characteristics than the base member 520 and functions as a thermal insulation layer inside the base member 520. Thus, the thermal insulation layer 63 is placed between the two members, the refrigerant flow path 522 and the sealing material 40, and exerts a thermal insulation function. This makes it less likely or suppresses the occurrence of extreme heat dissipation in the refrigerant flow path 522 at the sealing material 40. The thermal insulation layer 63, with its thermal insulation function, reduces or suppresses the heat dissipation from the refrigerant flow path 522 to the base member 520 between the thermal insulation layer 63 and the sealing material 40, thereby preventing the sealing material 40 from reaching a temperature below its glass transition point.

[0098] The arrangement of the heat insulating layer 63 between the two components, the refrigerant flow path 522 and the sealing material 40, includes, for example, a state in which the sealing material 40 and the heat insulating layer 63 are indirectly in contact via the base member body 521. Furthermore, the state of indirect contact means a state in which the sealing material 40 and the heat insulating layer 63 are arranged far enough apart that the sealing material 40 can be heated. The same applies not only when the heat insulating layers 63 and 64 are formed continuously along the refrigerant flow path 522, but also when they are formed intermittently along the refrigerant flow path 522.

[0099] Furthermore, for example in the Z-axis direction, the lower end of the insulation layer 63 is positioned below the lowest surface of the refrigerant flow path 522a. In the Z-axis direction, the entire insulation layer 63 is positioned between the third surface 520A and the fourth surface 520B, and the vertical height of the insulation layer 63 may be more than half the vertical height of the third surface 520A and the fourth surface 520B. In the Z-axis direction, the vertical height of the insulation layer 63 may be greater than the vertical height of the refrigerant flow path 522a. In the horizontal direction, the entire insulation layer 63 is positioned in the range from the outermost surface of the refrigerant flow path 522a to the outermost surface of the sealant 40 on the left side of the figure. In the horizontal direction, the width of the insulation layer 63 may be greater than the horizontal width of the refrigerant flow path 522a. Note that the insulation layer 64 is positioned between the refrigerant flow path 522b and the sealant 40 located closest to the refrigerant flow path 522b and on the right side of the figure in the horizontal direction. In this case, the explanation is omitted as it has the same configuration as the insulation layer 63.

[0100] Here, the insulation layers 63 and 64 are assumed to be in a vacuum. For example, each insulation layer 63 and 64 may be filled with an insulating material having a lower thermal conductivity than the material of the base member 520. Furthermore, for example, each insulation layer 63 and 64 may be filled with an air layer having a lower thermal conductivity than the material of the base member 520.

[0101] Furthermore, the six refrigerant flow paths 522a, 522b, 522c, 522d, 522e, and 522f arranged horizontally in the base member 520 shown in Figure 6 may be connected in a view along the Z-axis (plan view) and constitute a single flow path through which the same refrigerant flows, or they may be separate flow paths through which different refrigerants flow.

[0102] The sealant 40 is designed to be heated from the inside by the sealant heater 50 so that its temperature does not fall below its glass transition temperature. In addition, by placing the insulating layers 63 and 64 between each refrigerant flow path 522a and 522b and the sealant 40 located closest to each refrigerant flow path 522a and 522b, the heat dissipation function of the base member 520 from the refrigerant flow paths 522a and 522b inside the base member 520 can be reduced or suppressed. This prevents the sealant 40 from falling below its glass transition temperature.

[0103] In the electrostatic chuck 500, a refrigerant flow path 522 (522a) and an insulating layer 63 are formed inside the base member 520, and the insulating layer 63 is arranged between the refrigerant flow path 522 (522a) and the sealing material 40. Therefore, even if the environment inside the chamber becomes below the glass transition point of the sealing material 40, for example, the heat dissipation can be reduced or suppressed so that the sealing material 40 does not fall below the glass transition point. Consequently, the sealing function of the sealing material 40 is not lost, deterioration of the bonding layer 30 is suppressed, and the heat transfer characteristics of the bonding layer 30 are maintained.

[0104] <Other Embodiments> (1) In the above embodiment, the sealant heater 50 is formed inside the sealant 40, but the sealant heater 50 may be provided both inside the sealant 40 and inside the insulating layer 24. Alternatively, the heater 50 may be provided inside the sealant 40, inside the insulating layer 24, and inside the plate-shaped member 10. Furthermore, the sealant heater 50 may be provided both inside the sealant 40 and inside the plate-shaped member 10.

[0105] (2) In the above embodiment, the sealant heater 250 is formed on the plate-shaped member 210, but the sealant heater 250 may be provided on both the plate-shaped member 210 and the insulating layer 24.

[0106] (3) The number, size, thickness, shape, and placement of the sealing material in the above embodiment should be such that a sealing function for sealing the bonding layer can be achieved, as long as it does not impair the purpose of this disclosure.

[0107] (4) The method for manufacturing the electrostatic chuck 100 shown in the above embodiments is an example, and it may be manufactured by other methods as long as they do not impair the purpose of this disclosure.

[0108] (5) In embodiments 4 and 5, only the arrangement of each pair of insulation layers 61, 62, 63, and 64 was different. However, the shape, size, and range of each insulation layer may be changed as long as the purpose of this disclosure is not impaired. [Explanation of Symbols]

[0109] 10, 210… Plate-shaped member 10A, 210A…1st surface 10B,210B…Second surface 11,211,311… Upper part 12,212,312…Lower part 212A…5th surface 13…Insulator 14... Chuck electrode 312A…Sixth surface 215,216,231,315,316,331...outer surface 217...Inner part 218...Outer part 20, 320, 420, 520… Base components 21,321,421,521…Base component body 22,422,422a,422b,422c,422d,422e,422f,522,522a,522b,522c,522d,522e,522f… Refrigerant flow path 23…Through hole 24,324...Insulating layer 324A...Insulating layer body 324B...Heater placement section 30...Joining layer 20A, 320A, 420A, 520A... Third surface 20B, 320B, 420B, 520B…4th surface 40,240,340…Sealant 50, 250, 350... Heaters for sealing materials, 51... Wiring 61, 62... Insulation layer 63, 64... Insulation layer 100, 200, 300, 400, 500... Electrostatic chucks (holding devices) W...wafer (object)

Claims

1. A plate-shaped member having a first surface for holding an object and a second surface located on the opposite side of the first surface, A base member disposed on the second surface side of the plate-shaped member, A heater having a resistance heating element, A bonding layer that joins the plate-shaped member and the base member, A holding device comprising an annular sealing material positioned adjacent to the bonding layer and sealing the space between the plate-shaped member and the base member, The heater is a retaining device disposed inside the sealing material or in the vicinity of the sealing material, at least one of the above.

2. The retaining device according to claim 1, wherein the heater disposed near the sealing material is disposed inside the sealing material.

3. The retaining device according to claim 1, wherein the heater disposed near the sealing material is disposed on the plate-shaped member.

4. The retaining device according to claim 1, wherein the heater disposed near the sealing material is disposed on the base member.

5. The base member includes a metal material, An insulating layer is formed on the outer periphery of the second surface side of the base member. The holding device according to claim 4, wherein the heater is disposed inside the insulating layer.

6. A refrigerant flow path and a heat insulating layer having a predetermined size are formed inside the base member. The holding device according to any one of claims 1 to 5, wherein the insulating layer is disposed between the refrigerant flow path and the sealing material.

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