Photodetector and electronic equipment

Abstract

To provide a photodetector capable of improving the characteristics for obliquely incident light. [Solution] An optical detection device according to one embodiment of the present disclosure comprises an optical layer having a plurality of structures, a semiconductor layer, a spacer layer provided between the optical layer and the semiconductor layer, and a pixel array having a plurality of pixels, each including a photoelectric conversion element provided on the semiconductor layer. The pixel array includes a first region and a second region located further from the center of the pixel array than the first region. The thickness of the spacer layer in the second region is thinner than the thickness of the spacer layer in the first region.

Description

[Technical Field]

[0001] The present disclosure relates to a photodetection device and an electronic apparatus. [Background Art]

[0002] An image sensor including a planar nanophotonic microlens containing a high-refractive index nanostructure and a low-refractive index nanostructure has been proposed (Patent Document 1). [Prior Art Literature] [Patent Documents]

[0003] [Patent Document 1] U.S. Patent Application Publication No. 2022 / 0208822 Specification [Summary of Invention] [Problem to be Solved by Invention]

[0004] In a device that detects light, it is desirable to be able to improve characteristics with respect to obliquely incident light.

[0005] It is desirable to provide a photodetection device capable of improving characteristics with respect to obliquely incident light. [Means for Solving Problem]

[0006] A photodetection device according to an embodiment of the present disclosure includes an optical layer having a plurality of structures, a semiconductor layer, a spacer layer provided between the optical layer and the semiconductor layer, and a pixel array having a plurality of pixels each including a photoelectric conversion element provided in the semiconductor layer. The pixel array includes a first region and a second region located farther from the center of the pixel array than the first region. A thickness of the spacer layer in the second region is smaller than a thickness of the spacer layer in the first region. An optical detection device according to one embodiment of the present disclosure comprises an optical layer having a plurality of structures, a semiconductor layer, a spacer layer provided between the optical layer and the semiconductor layer, and a pixel array having a plurality of pixels, each including a photoelectric conversion element provided in the semiconductor layer. The pixel array includes a first region and a second region located further from the center of the pixel array than the first region. The thickness of the optical layer in the second region is thinner than the thickness of the optical layer in the first region. An optical detection device according to one embodiment of the present disclosure comprises an optical layer having a plurality of structures, a semiconductor layer, a spacer layer provided between the optical layer and the semiconductor layer, and a pixel array having a plurality of pixels, each including a photoelectric conversion element provided on the semiconductor layer. The pixel array includes a first region and a second region located further from the center of the pixel array than the first region. The spacer layer includes a first spacer layer and a second spacer layer provided stacked on the first spacer layer and having a different refractive index than the first spacer layer. The thickness of the first spacer layer in the second region is thinner than the thickness of the first spacer layer in the first region. An electronic device according to one embodiment of the present disclosure comprises an optical system and a photodetector that receives light transmitted through the optical system. The photodetector has an optical layer having a plurality of structures, a semiconductor layer, a spacer layer provided between the optical layer and the semiconductor layer, and a pixel array having a plurality of pixels each including a photoelectric conversion element provided in the semiconductor layer. The pixel array includes a first region and a second region located further from the center of the pixel array than the first region. The thickness of the spacer layer in the second region is thinner than the thickness of the spacer layer in the first region. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a block diagram showing an example of the schematic configuration of an imaging device, which is an example of a photodetector according to the first embodiment of the present disclosure. [Figure 2] Figure 2 shows an example of a pixel array of an imaging device according to the first embodiment of this disclosure. [Figure 3] Figure 3 is a diagram showing an example of the pixel circuit configuration of an imaging device according to the first embodiment of this disclosure. [Figure 4A] Figure 4A is a diagram illustrating an example of a planar configuration of an imaging device according to the first embodiment of the present disclosure. [Figure 4B] Figure 4B is a diagram illustrating an example of a planar configuration of an imaging device according to the first embodiment of this disclosure. [Figure 5] Figure 5 is a diagram illustrating an example of the cross-sectional configuration of an imaging device according to the first embodiment of this disclosure. [Figure 6A] Figure 6A is a diagram illustrating an example of the configuration of an imaging device according to the first embodiment of this disclosure. [Figure 6B] Figure 6B is a diagram illustrating an example of the configuration of an imaging device according to the first embodiment of this disclosure. [Figure 6C] Figure 6C is a diagram illustrating an example of the configuration of an imaging device according to the first embodiment of this disclosure. [Figure 7] Figure 7 shows an example of a cross-sectional configuration of an imaging device according to the first embodiment of this disclosure. [Figure 8] Figure 8 shows another example of the cross-sectional configuration of an imaging device according to the first embodiment of the present disclosure. [Figure 9] Figure 9 is a diagram illustrating an example of the configuration of an imaging device according to the first embodiment of this disclosure. [Figure 10] Figure 10 is a diagram illustrating an example of the configuration of an imaging device according to the first embodiment of this disclosure. [Figure 11] Figure 11 shows an example of the configuration of an imaging device according to a comparative example of the present disclosure. [Figure 12] Figure 12 is a diagram illustrating an example of the configuration of an imaging device according to the first embodiment of this disclosure. [Figure 13] Figure 13 is a diagram illustrating another configuration example of an imaging device according to the first embodiment of this disclosure. [Figure 14A] Figure 14A shows an example of a method for manufacturing an imaging device according to the first embodiment of this disclosure. [Figure 14B]FIG. 14B is a diagram illustrating an example of a method for manufacturing an image pickup apparatus according to the first embodiment of the present disclosure. [Figure 14C] FIG. 14C is a diagram illustrating an example of a method for manufacturing an image pickup apparatus according to the first embodiment of the present disclosure. [Figure 14D] FIG. 14D is a diagram illustrating an example of a method for manufacturing an image pickup apparatus according to the first embodiment of the present disclosure. [Figure 14E] FIG. 14E is a diagram illustrating an example of a method for manufacturing an image pickup apparatus according to the first embodiment of the present disclosure. [Figure 14F] FIG. 14F is a diagram illustrating an example of a method for manufacturing an image pickup apparatus according to the first embodiment of the present disclosure. [Figure 14G] FIG. 14G is a diagram illustrating an example of a method for manufacturing an image pickup apparatus according to the first embodiment of the present disclosure. [Figure 14H] FIG. 14H is a diagram illustrating an example of a method for manufacturing an image pickup apparatus according to the first embodiment of the present disclosure. [Figure 15A] FIG. 15A is a diagram for describing another example of a method for manufacturing an image pickup apparatus according to the first embodiment of the present disclosure. [Figure 15B] FIG. 15B is a diagram for describing another example of a method for manufacturing an image pickup apparatus according to the first embodiment of the present disclosure. [Figure 15C] FIG. 15C is a diagram for describing another example of a method for manufacturing an image pickup apparatus according to the first embodiment of the present disclosure. [Figure 16] FIG. 16 is a diagram for describing a configuration example of an image pickup apparatus according to Modification 1 of the present disclosure. [Figure 17] FIG. 17 is a diagram for describing another configuration example of an image pickup apparatus according to Modification 1 of the present disclosure. [Figure 18] FIG. 18 is a diagram for describing a configuration example of an image pickup apparatus according to Modification 2 of the present disclosure. [Figure 19] FIG. 19 is a diagram for describing another configuration example of an image pickup apparatus according to Modification 2 of the present disclosure. [Figure 20A] FIG. 20A is a diagram for describing an example of a method for manufacturing an image pickup apparatus according to Modification 2 of the present disclosure. [Figure 20B] Figure 20B is a diagram illustrating an example of a method for manufacturing an imaging device according to Modification 2 of this disclosure. [Figure 20C] Figure 20C is a diagram illustrating an example of a method for manufacturing an imaging device according to Modification 2 of this disclosure. [Figure 20D] Figure 20D is a diagram illustrating an example of a method for manufacturing an imaging device according to Modification 2 of this disclosure. [Figure 21] Figure 21 is a diagram illustrating an example of the configuration of an imaging device according to Modification 3 of this disclosure. [Figure 22] Figure 22 is a diagram illustrating an example of the configuration of an imaging device according to Modification 3 of this disclosure. [Figure 23] Figure 23 is a diagram illustrating an example of the configuration of an imaging device according to a second embodiment of the present disclosure. [Figure 24] Figure 24 is a diagram illustrating an example of the configuration of an imaging device according to a second embodiment of the present disclosure. [Figure 25] Figure 25 is a diagram illustrating an example of the configuration of an imaging device according to a second embodiment of the present disclosure. [Figure 26] Figure 26 is a diagram illustrating an example of the configuration of an imaging device according to Modification 4 of this disclosure. [Figure 27] Figure 27 is a diagram illustrating an example of the configuration of an imaging device according to a third embodiment of the present disclosure. [Figure 28] Figure 28 is a diagram illustrating an example of the configuration of an imaging device according to a third embodiment of the present disclosure. [Figure 29] Figure 29 is a block diagram showing an example of the configuration of an electronic device having an imaging device. [Figure 30] Figure 30 is a block diagram showing an example of a schematic configuration of a vehicle control system. [Figure 31] Figure 31 is an explanatory diagram showing an example of the installation location of the external information detection unit and the imaging unit. [Figure 32] Figure 32 shows an example of a schematic configuration of an endoscopic surgical system. [Figure 33]Figure 33 is a block diagram showing an example of the functional configuration of the camera head and CCU. [Modes for carrying out the invention]

[0008] The embodiments of this disclosure will be described in detail below with reference to the drawings. The description will be given in the following order. 1. First Embodiment 2. Second Embodiment 3. Third Embodiment 4. Examples of application 5. Application Examples

[0009] <1. First Embodiment> Figure 1 is a block diagram showing an example of the schematic configuration of an imaging device, which is an example of a photodetector according to the first embodiment of this disclosure. Figure 2 is a diagram showing an example of a pixel array of an imaging device according to the first embodiment. A photodetector is a device capable of detecting incident light. An imaging device 1, which is an example of a photodetector, has a plurality of pixels P including a photoelectric conversion unit, and is configured to generate a signal by photoelectric conversion of incident light.

[0010] The imaging device 1 is configured using, for example, a substrate (such as a silicon (Si) substrate or a silicon on insulator (SOI) substrate) on which the photoelectric conversion unit for each pixel P is provided. The imaging device 1 may also have a structure (i.e., a stacked structure) formed by stacking multiple substrates (or semiconductor layers). The imaging device 1 receives light transmitted through an optical system (not shown) and generates a signal.

[0011] The imaging device 1 has a region (pixel array 100) where multiple pixels P are provided, as shown in the example in Figure 1 or Figure 2. The imaging device 1 has, for example, a pixel array 100 in which multiple pixels P are arranged in a matrix in two dimensions as the imaging area. The pixel array 100 is a pixel section where multiple pixels P are arranged, and can also be called a light-receiving region.

[0012] The photoelectric conversion unit of pixel P is, for example, a photodiode (PD) and is configured to convert light into photoelectric energy. Each photoelectric conversion unit of pixel P is a photoelectric conversion element and can also be called a photoelectric conversion region. The imaging device 1 captures incident light (image light) from the subject to be measured via an optical system including, for example, an optical lens and an aperture (diaphragm).

[0013] The imaging device 1 is configured to capture an image of a subject formed by an optical system, for example. The imaging device 1 generates a pixel signal by photoelectric conversion of received light (visible light, infrared light, etc.). The imaging device 1, being a light detection device, is a device that can receive light and generate a signal, and can also be called a light receiving device.

[0014] The imaging device 1 (light detection device) is configured as an image sensor, for example. For instance, the imaging device 1 may be a CMOS (Complementary Metal Oxide Semiconductor) image sensor, a CCD (Charge Coupled Device) image sensor, etc. The imaging device 1 can be used in various electronic devices such as digital still cameras, video cameras, and mobile phones.

[0015] As shown in Figure 2, the direction of light incidence from the subject being measured is defined as the Z-axis direction, the left-right direction perpendicular to the Z-axis direction is defined as the X-axis direction, and the up-down direction perpendicular to both the Z-axis and X-axis directions is defined as the Y-axis direction. In subsequent figures, directions may also be indicated based on the direction of the arrows in Figure 2.

[0016] [Outline configuration of the imaging device] The imaging device 1, as shown in the example in Figure 1, includes a pixel array 100, a pixel control unit 111, a signal processing unit 112, a control unit 113, and a processing unit 114. The imaging device 1 also includes, for example, a plurality of control lines Lc and a plurality of signal lines Ls. The number and arrangement of pixels P in the pixel array 100 (i.e., the pixel section) can be changed as appropriate.

[0017] A control line Lc is a signal line capable of transmitting signals to control a pixel P, and is connected to the pixel control unit 111 and the pixels P of the pixel array 100. The control line Lc is configured to transmit, for example, a control signal for reading signals from the pixels P. In the example shown in Figure 1, multiple control lines Lc are wired to each pixel row of the pixel array 100, which consists of multiple pixels P arranged horizontally (in the row direction).

[0018] The multiple control lines Lc for each pixel row of the imaging device 1 include, for example, wiring that transmits signals to control the transfer transistor, wiring that transmits signals to control the selection transistor, wiring that transmits signals to control the reset transistor, wiring that transmits signals to control the switching transistor, etc. The control lines Lc can also be called drive lines (or pixel drive lines) that transmit signals to drive the pixels P.

[0019] The signal line Ls is a signal line capable of transmitting signals from pixels P, and is connected to the pixels P of the pixel array 100 and the signal processing unit 112. The signal line Ls is electrically connected to the pixels P and is configured to transmit signals output from the pixels P. For example, the signal line Ls is wired to each pixel column of the pixel array 100, which is composed of multiple pixels P arranged vertically (in the column direction).

[0020] In the pixel array 100 of the imaging device 1, multiple signal lines Ls may be provided for each pixel row. For example, the imaging device 1 has multiple signal lines Ls for each pixel row containing multiple pixels P. The number and arrangement of control lines Lc and signal lines Ls provided in the imaging device 1 are not limited to the illustrated example and can be changed as appropriate.

[0021] The pixel control unit 111 is configured to control each pixel P. The pixel control unit 111 is a control circuit (pixel control circuit) and is composed of multiple circuits, such as a buffer, a shift register, and an address decoder. The pixel control unit 111 generates signals for controlling the pixels P and outputs them to each pixel P of the pixel array 100 via a control line Lc. The pixel control unit 111 is controlled, for example, by the control unit 113, and controls each pixel P of the pixel array 100.

[0022] The pixel control unit 111 generates signals for controlling pixels P (signals to control the transfer transistor of pixel P, signals to control the selection transistor, signals to control the reset transistor, signals to control the switching transistor, etc.) and supplies them to each pixel P via the control line Lc. The pixel control unit 111 can also control the reading of pixel signals from each pixel P. The pixel control unit 111 can also be described as a pixel drive unit (pixel drive circuit) configured to drive each pixel P.

[0023] The signal processing unit 112 is configured to perform signal processing on the input pixel signal. The signal processing unit 112 is a signal processing circuit and includes, for example, a load circuit, an AD (Analog Digital) conversion circuit, a horizontal selection switch, etc. The load circuit is, for example, composed of a current source capable of supplying current to the amplification transistor of the pixel P, and together with the amplification transistor of the pixel P, forms a source follower circuit.

[0024] The load circuit and AD conversion circuit of the signal processing unit 112 are provided, for example, for each of the multiple signal lines Ls. The signal processing unit 112 may also have an amplification circuit configured to amplify the signal read from the pixel P via the signal line Ls. As an example, a load circuit, amplification circuit, and AD conversion circuit are provided for each pixel row of the pixel array 100.

[0025] The signals output from each pixel P selected and scanned by the pixel control unit 111 are input to the signal processing unit 112 via the signal line Ls. The signal processing unit 112 performs signal processing such as AD conversion and CDS (Correlated Double Sampling) of the pixel P signals. The signals from each pixel P transmitted via each signal line Ls are processed by the signal processing unit 112 and output to the processing unit 114.

[0026] The processing unit 114 is configured to acquire signals from each pixel P and perform signal processing. The processing unit 114 is a processing circuit and consists of circuits that perform various signal processing on the input pixel signals. The processing unit 114 (processing circuit) is composed of, for example, an arithmetic circuit, a memory circuit, an I / F (interface) circuit, etc.

[0027] The processing unit 114 is configured to perform various signal processing operations, such as noise reduction, interpolation, and gradation correction. For example, the processing unit 114 can perform signal processing on the pixel signal input from the signal processing unit 112 and output the processed pixel signal. The processing unit 114 may also include a processor and memory.

[0028] The control unit 113 is configured to control each part of the imaging device 1. The control unit 113 is a control circuit and includes, for example, a PLL (Phase Locked Loop), a timing generator, a DAC (Digital to Analog Converter), etc. As an example, the control unit 113 can receive a clock and data commanding the operating mode from an external source, and can also output data such as internal information of the imaging device 1.

[0029] The control unit 113 includes, for example, a timing generator configured to generate various timing signals. Based on the various timing signals (pulse signals, clock signals, etc.) generated by the timing generator, the control unit 113 performs drive control for the pixel control unit 111 and the signal processing unit 112, etc. Note that the control unit 113 and the processing unit 114 may be configured as an integrated unit.

[0030] The pixel array 100, pixel control unit 111, signal processing unit 112, control unit 113, processing unit 114, etc., described above may be provided on a single substrate or on multiple substrates. The imaging device 1 may have a laminated structure formed by stacking multiple substrates (for example, two or more semiconductor substrates).

[0031] The pixel control unit 111, signal processing unit 112, control unit 113, processing unit 114, etc. of the imaging device 1 may be provided, for example, as peripheral circuits in the peripheral area of ​​the pixel array 100. Note that some or all of the signal processing unit 112, control unit 113, and processing unit 114 may be configured as a single unit.

[0032] [Pixel composition] Figure 3 shows an example of the circuit configuration of a pixel in an imaging device according to the first embodiment. A pixel P includes, for example, a photoelectric conversion unit 11, a transistor TRG, a floating diffusion FD, and a readout circuit 15. The photoelectric conversion unit 11 (photoelectric conversion element) is configured to receive light and generate a signal.

[0033] The readout circuit 15 is configured to output a signal based on the photoelectrically converted charge. The readout circuit 15 has, for example, multiple transistors (also called pixel transistors) and is provided for each pixel P or for multiple pixels P. The readout circuit 15 can also be called a pixel readout circuit.

[0034] The photoelectric conversion unit 11 is configured to generate electric charge through photoelectric conversion. In the example shown in Figure 3, the photoelectric conversion unit 11 is a photodiode (PD) that converts incident light into electric charge. The photoelectric conversion unit 11 performs photoelectric conversion to generate an electric charge corresponding to the amount of light received. The photoelectric conversion unit 11 is a photoelectric conversion element and can also be called a light receiving element.

[0035] The transistor TRG is configured to transfer the charge photoelectrically converted in the photoelectric conversion unit 11 to the floating diffusion FD. The transistor TRG is a transfer transistor. The transistor TRG is controlled by the signal STRG and electrically connects or disconnects the photoelectric conversion unit 11 and the floating diffusion FD. The transistor TRG (i.e., the transfer transistor) can transfer the charge converted and stored in the photoelectric conversion unit 11 to the floating diffusion FD.

[0036] The floating diffusion FD is a storage unit and is configured to store the transferred charge. The floating diffusion FD can store the charge photoelectrically converted by the photoelectric conversion unit 11. The floating diffusion FD stores the transferred charge and converts it into a voltage corresponding to the capacitance of the floating diffusion FD. The floating diffusion FD can also be described as a storage unit capable of holding charge.

[0037] The readout circuit 15 is configured to read out pixel signals based on the charge photoelectrically converted by the photoelectric conversion unit 11. The readout circuit 15 includes, as an example, a transistor AMP, a transistor SEL, and a transistor RST. The readout circuit 15 may also include a floating diffusion FD. The readout circuit 15 may also include a transistor TRG.

[0038] The transistor AMP is configured to generate and output a signal based on the charge stored in the floating diffusion FD. The transistor AMP is an amplifying transistor. The transistor AMP (i.e., the amplifying transistor) can generate and output a signal based on the charge converted in the photoelectric conversion unit 11.

[0039] The gate of the transistor AMP is electrically connected to the floating diffusion diode (FD), and the voltage converted by the floating diffusion diode is input to it. The drain of the transistor AMP is connected to a power line that supplies, for example, the power supply voltage (the power supply voltage VDD in the example shown in Figure 3).

[0040] The source of the transistor AMP is connected to the signal line Ls, for example, via the transistor SEL. The transistor AMP is configured to generate a signal based on the charge stored in the floating diffusion FD, i.e., a signal based on the voltage of the floating diffusion FD, and output it to the signal line Ls.

[0041] The transistor SEL is configured to control the output of the pixel signal. The transistor SEL is a selection transistor. The transistor SEL is electrically connected in series with the transistor AMP, as shown in the example in Figure 3. The transistor SEL is controlled by the signal SSEL and is configured to output the signal from the transistor AMP to the signal line Ls. The transistor SEL (i.e., the selection transistor) can control the timing of the pixel signal output.

[0042] The transistor SEL is configured to output a signal based on the charge converted by the photoelectric conversion unit 11. The transistor SEL can output the pixel signal of pixel P to the signal line Ls. The transistor SEL may also be electrically connected in series between the power line to which the power supply voltage (power supply voltage VDD in Figure 3) is supplied and the transistor AMP. The transistor SEL may be omitted if necessary.

[0043] Transistor RST is configured to reset the voltage of the floating diffusion FD. Transistor RST is a reset transistor. Transistor RST (i.e., the reset transistor) is electrically connected to a power line to which a power supply voltage (power supply voltage VDD in the example shown in Figure 3) is supplied, and is configured to perform a reset of the charge of pixel P.

[0044] Transistor RST is controlled by signal SRST and can reset the charge accumulated in the floating diffusion FD and reset the voltage of the floating diffusion FD. Transistor RST electrically connects the power line and the floating diffusion FD and discharges the charge accumulated in the floating diffusion FD. Transistor RST can also reset the charge accumulated in the photoelectric conversion unit 11 via transistor TRG.

[0045] The readout circuit 15 may be configured to allow changing the conversion gain (i.e., conversion efficiency) when converting charge to voltage. For example, the readout circuit 15 has a transistor (switching transistor) used to set the conversion gain. The switching transistor is electrically connected, for example, between a floating diffusion FD and a transistor RST.

[0046] In the readout circuit 15, when the switching transistor is turned on, the capacitance added to the floating diffusion FD of the pixel P increases, and the conversion gain when converting charge to voltage is switched. The switching transistor can change the conversion gain (conversion efficiency) by switching the capacitance connected to the gate of transistor AMP. The switching transistor may be electrically connected in series with transistor RST or electrically connected in parallel with transistor RST.

[0047] The aforementioned transistors TRG (transfer transistor), AMP (amplifier transistor), SEL (selection transistor), RST (reset transistor), and switching transistor are, for example, MOS transistors (MOSFETs) that have gate, source, and drain terminals.

[0048] In the example shown in Figure 3, transistors TRG, AMP, SEL, and RST are each composed of NMOS transistors. The transistor for pixel P may be composed of a PMOS transistor if necessary.

[0049] The pixel control unit 111 (see Figure 1) of the imaging device 1 supplies control signals to the gates of transistors TRG, SEL, RST, or switching transistors of each pixel P via the control line Lc described above, thereby turning the transistors on (conducting) or off (non-conducting).

[0050] The multiple control lines Lc for each pixel row of the imaging device 1 include, as an example, wiring that transmits the signal STRG for controlling transistor TRG, wiring that transmits the signal SSEL for controlling transistor SEL, wiring that transmits the signal SRST for controlling transistor RST, and wiring that transmits signals for controlling switching transistors.

[0051] The transistors TRG, SEL, RST, and switching transistors are controlled on and off by the pixel control unit 111. The pixel control unit 111 controls the readout circuit 15 for each pixel P, thereby causing each pixel P to output a pixel signal to the signal line Ls. The pixel control unit 111 can also control the reading of the pixel signal from each pixel P to the signal line Ls.

[0052] The imaging device 1 may have a configuration in which multiple pixels P share one readout circuit 15. The readout circuit 15 is provided for multiple pixels P, for example. In the imaging device 1, a readout circuit 15 may be arranged for each of the multiple pixels P, and one readout circuit 15 may be shared by multiple pixels P. As an example, a 2x2 pixel array, composed of four adjacent pixels P, may share one readout circuit 15.

[0053] [Configuration of the imaging device] Figures 4A and 4B illustrate an example of the planar configuration of an imaging device according to the first embodiment. Figure 4A shows an example of the planar configuration in layers including an optical layer 130 provided on the side into which light from the subject to be measured enters. Figure 4B shows an example of the planar configuration in the semiconductor layer 110 on which the photoelectric conversion unit 11 is provided.

[0054] In the imaging device 1, multiple types of pixels P (for example, pixels Pr, pixels Pg, and pixels Pb) are provided in the pixel array 100 so as to be arranged in the horizontal direction (X-axis direction) and the vertical direction (Y-axis direction). In the pixel array 100, multiple pixels P, each having a photoelectric conversion unit 11 (photoelectric conversion element), are arranged in a matrix in a two-dimensional manner.

[0055] The multiple pixels P provided in the pixel array 100 of the imaging device 1 include, for example, pixels Pr (R pixels) that receive and convert light in the red (R) wavelength range into photoelectric light, pixels Pg (G pixels) that receive and convert light in the green (G) wavelength range into photoelectric light, and pixels Pb (B pixels) that receive and convert light in the blue (B) wavelength range into photoelectric light. The number and arrangement of pixels P in the pixel array 100 can be arbitrarily set.

[0056] The imaging device 1 has an optical layer 130 located above the semiconductor layer 110 on which the photoelectric conversion unit 11 is provided. The optical layer 130 is a layer having a structure 50 and is provided so as to be stacked on the semiconductor layer 110 and a spacer layer described later. The structure 50 is, for example, a columnar (pillar-shaped) structure. The optical layer 130 is an optical component (optical element) utilizing metamaterial (metasurface) technology.

[0057] The imaging device 1 is configured to guide incident light towards the photoelectric conversion unit 11 using an optical layer 130 having a structure 50. Each pixel P of the imaging device 1 has a light-guiding region 60, which is the area where the structure 50 is provided, as shown in the example in Figure 4A. The light-guiding region 60 corresponds to one region when the optical layer 130 is divided into regions for each pixel P or for multiple pixels P (i.e., for a predetermined number of pixels P).

[0058] In the pixel array 100, for example, a minute structure 50 is placed in each light-guiding region 60 of each pixel P. The light-guiding region 60 has a structure 50 as a nanostructure and a member 55 provided around the structure 50. For example, as shown in the example in Figure 4A, one or more structures 50 are placed for each pixel P (i.e., each light-guiding region 60). Structures 50 may also be placed at the boundaries of multiple adjacent light-guiding regions 60.

[0059] The structure 50 is, for example, a pillar (i.e., a columnar member) having a cylindrical shape. The optical layer 130 has the structure 50, which is a nanostructure (also called a nanopillar), and is configured to guide incident light towards the photoelectric conversion unit 11. The optical layer 130 is configured, for example, as a spectral layer that spectrally separates light. The optical layer 130 can also be called a metamaterial layer, a metasurface layer, or a splitter layer.

[0060] The shape of each structure 50 in the optical layer 130 can be changed as appropriate. The structure 50 may be a pillar having the shape of a rectangular prism (for example, a square prism). The structure 50 may have a circular, elliptical, or polygonal shape in plan view (i.e., when viewed in the XY plane). In addition, the number and arrangement of the structures 50 in each light guide region 60 are not limited to the illustrated example and can be changed as appropriate.

[0061] Member 55 is provided around the structure 50 in the optical layer 130. Member 55 is, for example, a member located around the structure 50 and is made of a material having a refractive index different from that of the structure 50. The structure 50 is provided within member 55, or it can be said that it is arranged by replacing a part of member 55. Member 55 can also be called a material layer or a support member.

[0062] The pixels P of the imaging device 1 may have a filter 20, as shown in the example in Figure 4A, etc. The filter 20 is configured to selectively transmit light in a specific wavelength range from the incident light. The filter 20 is provided, for example, between the optical layer 130 and the photoelectric conversion unit 11 for each pixel P or for each set of pixels P. The filter 20 is, as an example, an RGB color filter.

[0063] Pixel Pr (R pixel) has a filter 20 that transmits light in the red (R) wavelength range. Pixel Pg (G pixel) has a filter 20 that transmits light in the green (G) wavelength range. Pixel Pb (B pixel) has a filter 20 that transmits light in the blue (B) wavelength range. In the pixel array 100, for example, multiple R pixels, multiple G pixels, and multiple B pixels are arranged repeatedly.

[0064] The R pixels, G pixels, and B pixels are arranged, for example, according to a Bayer array. In the pixel array 100, 2x2 pixels, each consisting of one pixel Pr, two pixels Pg, and one pixel Pb, are repeatedly provided. The pixel array 100 has, for example, pixel rows in which pixels Pr and pixels Pg are arranged alternately, and pixel rows in which pixels Pg and pixels Pb are arranged alternately.

[0065] The R, G, and B pixels of the pixel array 100 generate and output pixel signals for the R component, G component, and B component, respectively. The imaging device 1 can obtain RGB pixel signals. Note that the arrangement of pixels P in the imaging device 1 is not limited to the example described above and can be set arbitrarily.

[0066] For example, pixels Pr, Pg, and Pb may each be arranged in 2x2 pixel units. In the pixel array 100, for example, four adjacent pixels Pr, four adjacent pixels Pg, and four adjacent pixels Pb may be repeatedly arranged. It can also be said that pixels Pr, Pg, and Pb are each arranged periodically in a 2x2 grid.

[0067] The filter 20 provided in the pixel P of the pixel array 100 is not limited to primary color (RGB) color filters, but may also be complementary color filters such as Cy (cyan), Mg (magenta), and Ye (yellow). A filter corresponding to W (white), that is, a filter that transmits light across the entire wavelength range of incident light, may also be provided. The filter 20 may also be a filter that transmits infrared light.

[0068] Furthermore, the filter 20 may be omitted in the imaging device 1 if necessary. For example, depending on the characteristics of the optical layer 130, the filter 20 may not be provided for some pixels P in the imaging device 1. Also, for example, the filter 20 does not need to be provided for pixels that receive white (W) light and perform photoelectric conversion.

[0069] Figure 5 is a diagram illustrating an example of the cross-sectional configuration of an imaging device according to the first embodiment. The imaging device 1 has, for example, an optical layer 130, a spacer layer 120, a semiconductor layer 110, and a wiring layer 105, as shown in the example in Figure 5. The imaging device 1 has a configuration in which the optical layer 130, the spacer layer 120, the semiconductor layer 110, and the wiring layer 105 are stacked in the Z-axis direction.

[0070] From the side where light is incident, an optical layer 130, a spacer layer 120, a semiconductor layer 110, and a wiring layer 105 are provided. The semiconductor layer 110 is made of a semiconductor substrate such as a Si substrate or an SOI substrate. As shown in Figure 5, the semiconductor layer 110 has opposing surfaces 11S1 and 11S2. Surface 11S2 is the surface opposite to surface 11S1.

[0071] Surface 11S1 of the semiconductor layer 110 is, for example, a light-receiving surface (light incident surface). Surface 11S2 of the semiconductor layer 110 is an element formation surface on which elements such as transistors and capacitive elements are formed. A gate electrode, a gate insulating film (for example, a gate oxide film), etc., are provided on surface 11S2 of the semiconductor layer 110. The element formation surface of the semiconductor layer 110, i.e., surface 11S2, is a surface on which various circuit elements are provided, and can also be called a circuit surface.

[0072] The semiconductor layer 110 may be a SiGe (silicon germanium) substrate or a SiC (silicon carbide) substrate, etc. The semiconductor layer 110 may be composed of other semiconductor materials, such as III-V group compound semiconductor materials. The semiconductor layer 110 may be formed using other materials.

[0073] A spacer layer 120 is provided on the surface 11S1 side of the semiconductor layer 110. A wiring layer 105 is provided on the surface 11S2 side of the semiconductor layer 110. The optical layer 130 and the spacer layer 120 are stacked on the semiconductor layer 110 in the thickness direction perpendicular to the surface 11S1 of the semiconductor layer 110. The optical layer 130 is provided on the side into which light from the optical system is incident, and the wiring layer 105 is provided on the side opposite to the side into which light is incident.

[0074] For example, the semiconductor layer 110 is provided with a photoelectric conversion unit 11 (photoelectric conversion element) for each pixel P. The photoelectric conversion unit 11 is provided between surfaces 11S1 and 11S2 of the semiconductor layer 110. Multiple photoelectric conversion units 11 are provided in the semiconductor layer 110 so as to be aligned with surfaces 11S1 and 11S2 of the semiconductor layer 110. For example, multiple photoelectric conversion units 11 are embedded in the semiconductor layer 110. The photoelectric conversion unit 11 can also be called a photoelectric conversion region or a photoelectric conversion layer.

[0075] The wiring layer 105 is provided laminated on the semiconductor layer 110. The wiring layer 105 includes, for example, a conductive film and an insulating film, and has a plurality of wirings and a plurality of vias (also called contacts). The wiring layer 105 has a configuration in which a plurality of wirings are laminated with an insulating film acting as an interlayer insulating film (interlayer insulating layer). The wiring layer 105 is composed of, for example, two or more or three or more layers of wiring, and is provided as a multilayer wiring layer.

[0076] The wiring of the wiring layer 105 is formed using metallic materials such as aluminum (Al), copper (Cu), cobalt (Co), and ruthenium (Ru). The wiring of the wiring layer 105 may also be made of tungsten (W), polysilicon (Poly-Si), or other conductive materials. The interlayer insulating film may be formed using silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or other insulating materials.

[0077] For example, the readout circuit 15 (see Figure 3) described above is provided in the semiconductor layer 110 and the wiring layer 105 for each pixel P or for each of multiple pixels P. The pixel control unit 111, signal processing unit 112, control unit 113, processing unit 114, etc., described above using Figure 1 may be provided in the semiconductor layer 110 and the wiring layer 105, or they may be provided on a substrate separate from the semiconductor layer 110.

[0078] The optical layer 130 is provided above the spacer layer 120, as shown in the example in Figure 5. The optical layer 130 is laminated on the spacer layer 120 and is located above the semiconductor layer 110. The optical layer 130 has a light-guiding region 60 on which structures 50 are provided, and is configured to guide incident light towards the photoelectric conversion unit 11. For example, in the optical layer 130, a plurality of structures 50 are provided so as to be aligned in the X-axis direction or the Y-axis direction.

[0079] The optical layer 130 includes a structure 50 and a member 55 provided around the structure 50. The structure 50 and the member 55 are made of materials having different refractive indices. The optical layer 130 has, for example, a light-guiding region 60 in which the structure 50 (i.e., nanostructure) is arranged for each pixel P or for each of a group of pixels P in the pixel array 100.

[0080] The optical layer 130 includes, for example, a light-guiding region 60 provided for a pixel Pr (referred to as light-guiding region 60r), a light-guiding region 60 provided for a pixel Pg (referred to as light-guiding region 60g), and a light-guiding region 60 provided for a pixel Pb (referred to as light-guiding region 60b). One or more structures 50 and members 55 are formed in each of the light-guiding regions 60r, 60g, and 60b.

[0081] The spacer layer 120 is provided between the optical layer 130 and the semiconductor layer 110. The spacer layer 120 is formed to be stacked on the semiconductor layer 110 and is located between the optical layer 130 and the semiconductor layer 110. The spacer layer 120 is composed of an insulating film such as an oxide film, a nitride film, or an oxynitride film, and can also be called an insulating layer.

[0082] The photoelectric conversion unit 11 of the pixel P converts light incident through the light guide region 60 of the optical layer 130 and the spacer layer 120 into photoelectric energy. The spacer layer 120 may be made of an insulating material such as silicon oxide (SiO), silicon oxynitride (SiON), silicon nitride (SiN), or aluminum oxide (AlO), or it may be made of other materials.

[0083] The spacer layer 120 may be made of a low refractive index material such as silicon oxide. The spacer layer 120 may be formed using a resin material. The spacer layer 120 may be formed using another material that transmits light in the wavelength range to be measured. The spacer layer 120 can also be described as a light-transmitting transparent layer.

[0084] As shown in Figure 5, the spacer layer 120 has surfaces 12S1 and 12S2. Surface 12S2 is the surface opposite to surface 12S1. The spacer layer 120 is provided such that, for example, surface 12S2 faces the semiconductor layer 110. An optical layer 130 is provided on the surface 12S1 side of the spacer layer 120.

[0085] As will be described later, the spacer layer 120 is configured to have different thicknesses (film thicknesses) depending on the distance from the center of the pixel array 100, i.e., the image height. For example, the thickness of the spacer layer 120 in the Z-axis direction in regions with high image heights is made relatively thin. This makes it possible to improve the characteristics for obliquely incident light.

[0086] The imaging device 1 has a filter layer 115, as shown in the example in Figure 5. The filter layer 115 is a layer (region) having a filter 20 and is provided on the spacer layer 120. The filter layer 115 is provided so as to be stacked on the semiconductor layer 110 on which the photoelectric conversion unit 11 is provided, and is located between the optical layer 130 and the semiconductor layer 110.

[0087] The filter layer 115 is provided with a filter 20 for each pixel P or for each set of pixels P. The filter 20 is located between the optical layer 130 and the semiconductor layer 110, above the photoelectric conversion unit 11. The filter layer 115, including the filter 20, is configured to selectively transmit incident light to the photoelectric conversion unit 11. As described above, the filter 20 is an RGB color filter, a CMY color filter, etc.

[0088] Furthermore, the imaging device 1 has a separation region 17, as shown in the example in Figure 5. The separation region 17 is a separation region provided between a plurality of adjacent pixels P (or photoelectric conversion unit 11). At least a portion of the separation region 17 is provided at the boundary between adjacent pixels P. The separation region 17 is constructed, for example, using a trench (groove) and is provided around the pixels P (or photoelectric conversion unit 11). The separation region 17 may also be provided so as to penetrate the semiconductor layer 110.

[0089] The isolation region 17 is formed, for example, in the semiconductor layer 110 between a plurality of adjacent pixels P, separating the pixels P (or photoelectric conversion units 11). As an example, the isolation region 17 is provided so as to surround all four sides of the photoelectric conversion unit 11 in a plan view (i.e., when viewed in the XY plane) (see also Figure 4B). The isolation region 17 may be formed in a grid pattern in the semiconductor layer 110 so as to surround each photoelectric conversion unit 11 of each pixel P.

[0090] The isolation region 17 (isolation area) may, for example, have an FTI (Full Trench Isolation) structure and be formed to extend to the surface 11S2 of the semiconductor layer 110. Alternatively, the isolation region 17 may extend from the surface 11S1 of the semiconductor layer 110 to the space between surfaces 11S1 and 11S2 of the semiconductor layer 110. The isolation region 17 can also be called an inter-pixel isolation area or an inter-pixel isolation wall.

[0091] An insulating film, such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or an aluminum oxide film, is provided in the trench of the separation region 17. The trench of the separation region 17 may also be filled with an insulating material, such as polysilicon, a metallic material, or another material.

[0092] The isolation region 17 may be formed using a material having a low refractive index, such as silicon oxide or silicon oxynitride. A void (cavity) may be provided within the isolation region 17. The isolation region 17 may be composed of a semiconductor region (n-type or p-type semiconductor region) formed by ion implantation or solid-phase diffusion.

[0093] The imaging device 1 may have at least one of a fixed charge film and a reflection suppression film on the surface 11S1 side of the semiconductor layer 110. For example, the fixed charge film and the reflection suppression film are provided between the semiconductor layer 110 and the filter 20. The fixed charge film and the reflection suppression film are composed of, as an example, a metal compound (metal oxide, metal nitride, metal oxynitride, etc.).

[0094] A fixed charge film is a film having a fixed charge (for example, a negative fixed charge), and is formed using, for example, a high dielectric material. The fixed charge film may be composed of aluminum oxide, hafnium oxide, etc. A film having a positive fixed charge may also be provided as the fixed charge film. A reflection suppression film (i.e., an anti-reflective film) is provided, as an example, laminated with the fixed charge film.

[0095] The reflection suppression film is composed of, for example, hafnium oxide, tantalum oxide, etc. The reflection suppression film may also be composed of insulating materials such as silicon nitride, aluminum oxide, etc., or may be formed using other materials. At least a portion of one of the fixed charge film and the reflection suppression film may be provided in the semiconductor layer 110 along the side surface (side wall) of the isolation region 17.

[0096] Light from the subject to be measured is incident on the optical layer 130, for example, through an optical system (such as an imaging lens). The optical layer 130 has a nanostructure 50 and is configured to guide the light incident from above to the photoelectric conversion unit 11 of each pixel P. The optical layer 130, for example, imparts a phase delay to the incident light and guides the light to the filter 20 and the photoelectric conversion unit 11.

[0097] The structure 50 has, for example, a cylindrical or prismatic shape. In plan view (i.e., when viewed in the XY plane), the structure 50 may be circular, elliptical, or quadrilateral. The shape of the structure 50 can be changed as appropriate and may be polygonal, cross-shaped, or other shapes.

[0098] In a plan view, the structure 50 has a size that is, for example, less than or equal to a predetermined wavelength of incident light. When viewed in the XY plane, the structure 50 may have a size that is less than or equal to the wavelength range of the light to be measured (for example, the wavelength range of visible light or the wavelength range of infrared light). When viewed in the XZ or YZ plane, the size of the structure 50 (for example, the height of a columnar structure 50) may be less than or equal to the predetermined wavelength of incident light, or it may be greater than the wavelength of incident light.

[0099] In the optical layer 130, multiple structures 50 are arranged two-dimensionally in the X-axis and Y-axis directions. The optical layer 130 has, for example, a structure 50 in each light-guiding region 60, and is configured as an optical component (optical element) that guides light. The optical layer 130 uses the nanostructures 50 to propagate light to the photoelectric conversion unit 11. The structures 50 are also called nanopillars, nanoposts, nanoatoms, metaatoms, metasurface structures, or microstructures.

[0100] In the optical layer 130, for example, a structure 50 is provided for each pixel P of each color. In the optical layer 130, the structures 50 are arranged in each light guide region 60 so as to give a desired phase profile to the incident light. The size (width, height, etc.), number of structures, spacing between structures, and constituent materials of the structures 50 are determined so that light in the wavelength range to be detected is propagated to a predetermined photoelectric conversion unit 11.

[0101] In the optical layer 130, for example, multiple structures 50 are arranged at intervals less than or equal to a predetermined wavelength of incident light. For example, multiple structures 50 may be provided in the X-axis and Y-axis directions at intervals less than or equal to the wavelength range of visible light. Alternatively, for example, multiple structures 50 may be arranged in the XY plane at intervals less than or equal to the wavelength range of infrared light.

[0102] Member 55 is provided between multiple adjacent structures 50. Member 55 is provided, for example, to fill the space between multiple adjacent structures 50, and can also be called a filling member. Part of member 55 may be formed on the upper surface (surface) of the structure 50. Member 55 is provided, for example, to cover multiple structures 50. Part of member 55 may be provided on the lower surface (bottom surface) of the structure 50 and located below the structure 50.

[0103] The structure 50 is configured to have a refractive index different from that of the adjacent material (or medium). The structure 50 has a refractive index different from that of the surrounding material or void, for example, member 55. The structure 50 and member 55 may be constructed from different materials. For example, the structure 50 may be constructed from a material with a relatively high refractive index.

[0104] The structure 50 is, for example, made of a material having a higher refractive index than the member 55, and thus has a higher refractive index than the member 55. The structure 50 is made of a high refractive index material and can also be called a high refractive index section. The member 55 is made of a low refractive index material and can also be called a low refractive index section. The member 55 can also be called a material layer having a different refractive index than the structure 50.

[0105] The structure 50 is composed of, for example, an oxide film containing titanium (Ti). As an example, the structure 50 is composed of titanium oxide (TiO). The structure 50 may also be formed using silicon, polysilicon (Poly-Si), amorphous silicon (a-Si), or germanium (Ge), etc. The structure 50 may also be formed using silicon carbide (SiC) or other silicon compounds.

[0106] The structure 50 may be composed of other metal compounds (metal oxides, metal nitrides, metal oxynitrides, etc.). The structure 50 may be composed of elements, oxides, nitrides, oxynitrides, or composites thereof of titanium (Ti), hafnium (Hf), zirconium (Zr), aluminum (Al), tantalum (Ta), indium (In), niobium (Nb), etc. The structure 50 may also be composed of GaP, GaN, GaAs, etc.

[0107] The component 55 is composed of an inorganic material such as an oxide, nitride, or oxynitride. The component 55 may be composed of silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), etc. The component 55 may also be formed using silicon carbide, silicon oxide carbide, silicon carbide nitride, or other silicon compounds.

[0108] The component 55 may be made of a siloxane resin, a styrene resin, an acrylic resin, or the like. The component 55 may be made of a material in which fluorine is contained in any of these resins. The component 55 may also be formed using a material in which beads (fillers) having a higher (or lower) refractive index than the resin are embedded in any of these resins.

[0109] The structure 50 and the member 55 may be made of inorganic materials or organic materials. The structure 50 or the member 55 may be made using voids (air). For example, the member 55 may be made including voids (cavities). The materials constituting the structure 50 and the member 55 are selected according to the refractive index difference with the surrounding material, the wavelength range of the light to be measured, etc.

[0110] The optical layer 130 is configured to control the wavefront of light by causing a phase delay in the incident light, for example, due to the difference in refractive index between the structure 50 and the surrounding material (medium). The optical layer 130 adjusts the direction of propagation (i.e., direction of light) of the light by providing a phase delay to the incident light through the structure 50 and the member 55 surrounding the structure 50.

[0111] In each pixel P (or each light-guiding region 60), the effective refractive index of the structure 50 and the member 55 is adjusted according to, for example, the occupancy rate (filling rate) of the structure 50, and the amount of phase delay of light in each wavelength range is determined. By adjusting the size and number of structures 50, the amount of phase delay can be controlled to achieve a desired phase distribution.

[0112] The optical layer 130 may have a reflection suppression film 58, as shown in the example in Figure 5. The reflection suppression film 58 is provided on the structure 50 of the optical layer 130. For example, the reflection suppression film 58 (anti-reflective film) is provided on the side of the structure 50 to which light is incident. The reflection suppression film 58 is provided on the structure 50 to reduce (suppress) reflection.

[0113] The reflection suppression film 58 is provided, for example, to cover a plurality of structures 50 and members 55, and is configured to have a refractive index different from that of the structures 50 (or members 55). The reflection suppression film 58 may be made of an insulating material such as silicon oxide or silicon oxynitride, or it may be made of other materials. The reflection suppression film 58 may be made by laminating a plurality of films.

[0114] The optical layer 130 is configured, for example, to be capable of spectrally separating light and is provided as a spectral element (spectrometry unit) that spectrally separates incident light. The optical layer 130 is configured as a splitter (color splitter) and can also be called a color splitter layer or a color separation layer. The optical layer 130 can also be called an optical element configured to redirect light.

[0115] The optical layer 130 adjusts the propagation direction of light by applying different phase delay amounts according to the wavelength of light, thereby separating the incident light into light of each wavelength range. The size, material (refractive index), etc., of the structure 50 are determined so that light of a specific wavelength range to be detected branches and proceeds to the photoelectric conversion unit 11 of the desired pixel P. The light phased by the optical layer 130 reaches the photoelectric conversion unit 11 via the spacer layer 120.

[0116] Light from the subject to be measured is incident on the photoelectric conversion unit 11 of each pixel P via the optical layer 130 and the spacer layer 120. Each pixel P converts the incident light into electricity to generate a pixel signal. The imaging device 1 can use the pixel signals obtained from each pixel P to generate, for example, image data showing the subject image, image data relating to the distance to the object to be measured (distance image data), and so on.

[0117] The optical layer 130 of the imaging device 1 imparts different phase delays to light in multiple wavelength ranges, such as light in a first wavelength range, light in a second wavelength range, and light in a third wavelength range. In the imaging device 1, the optical layer 130 adjusts the propagation direction of blue light, green light, and red light, which are, for example, the first to third wavelengths of light.

[0118] The light guide region 60b of pixel Pb is configured to propagate blue (B) light from the incident light to the photoelectric conversion unit 11 of that pixel Pb. Furthermore, the light guide region 60b of pixel Pb is configured to propagate red (R) light from the incident light to the photoelectric conversion unit 11 of pixel Pr, and green (G) light to the photoelectric conversion unit 11 of pixel Pg. The light guide region 60b of pixel Pb splits the incident light, guiding the light in the red wavelength range toward pixel Pr and the light in the green wavelength range toward pixel Pg.

[0119] The light guide region 60g of pixel Pg is configured to propagate green (G) light from the incident light to the photoelectric conversion unit 11 of pixel Pg. Furthermore, the light guide region 60g of pixel Pg is configured to propagate red (R) light from the incident light to the photoelectric conversion unit 11 of pixel Pr, and blue (B) light to the photoelectric conversion unit 11 of pixel Pb. The light guide region 60g of pixel Pg splits the incident light, guiding the red wavelength light towards pixel Pr and the blue wavelength light towards pixel Pb.

[0120] The light guide region 60r of the pixel Pr is configured to propagate red (R) light from the incident light to the photoelectric conversion unit 11 of the pixel Pr. Furthermore, the light guide region 60r of the pixel Pr is configured to propagate blue (B) light from the incident light to the photoelectric conversion unit 11 of the pixel Pb, and green (G) light to the photoelectric conversion unit 11 of the pixel Pg. The light guide region 60r of the pixel Pr splits the incident light, guiding the light in the blue wavelength range toward the pixel Pb and the light in the green wavelength range toward the pixel Pg.

[0121] Thus, as schematically shown by the arrows in Figure 6A, the multiple pixels surrounding the pixel Pb guide the blue wavelength light of the incident light toward the pixel Pb. The blue light incident on the pixel Pb and the blue light incident on each of the surrounding pixels can be focused onto the photoelectric conversion unit 11 of the pixel Pb. The photoelectric conversion unit 11 of the pixel Pb receives light in the blue wavelength range, performs photoelectric conversion, and can generate an electric charge corresponding to the amount of light received.

[0122] As schematically shown by the arrows in Figure 6B, multiple pixels surrounding pixel Pg guide the green wavelength light of the incident light toward pixel Pg. The green light incident on pixel Pg and the green light incident on each of the surrounding pixels can be focused onto the photoelectric conversion unit 11 of pixel Pg. The photoelectric conversion unit 11 of pixel Pg receives light in the green wavelength range, performs photoelectric conversion, and can generate an electric charge corresponding to the amount of light received.

[0123] Furthermore, as schematically shown by the arrows in Figure 6C, multiple pixels surrounding pixel Pr guide the red wavelength light of the incident light toward pixel Pr. The red light incident on pixel Pr and the red light incident on each of the surrounding pixels can be focused onto the photoelectric conversion unit 11 of pixel Pr. The photoelectric conversion unit 11 of pixel Pr receives light in the red wavelength range, performs photoelectric conversion, and can generate an electric charge corresponding to the amount of light received.

[0124] Figure 7 shows an example of a cross-sectional configuration of an imaging device according to the first embodiment. The imaging device 1 according to this embodiment is configured such that the thickness of the spacer layer 120 differs depending on the distance from the center of the pixel array 100, i.e., the image height. The spacer layer 120 is provided such that the thickness of the spacer layer 120 in the region away from the center of the pixel array 100 is thinner than the thickness of the spacer layer 120 in the central region of the pixel array 100.

[0125] The imaging device 1 is configured such that, for example, as shown in Figure 7, the thickness (film thickness) of the spacer layer 120 in the Z-axis direction becomes thinner as it moves away from the center of the pixel array 100 (i.e., as the image height increases). The spacer layer 120, as an example, has a curved surface 12S1 and a shape that gradually becomes thinner from the center to the edge of the pixel array 100.

[0126] In the example shown in Figure 7, the thickness of the spacer layer 120 gradually decreases as the distance from the center of the pixel array 100 increases. It can also be said that the thickness of the spacer layer 120 increases as it approaches the center of the pixel array 100 (for example, the center of the chip of the imaging device 1, where the image height is zero).

[0127] As shown in the example in Figure 8, the spacer layer 120 may be provided such that the thickness of the spacer layer 120 (i.e., the thickness in the Z-axis direction) changes in steps. In the example shown in Figure 8, the surface 12S1 of the spacer layer 120 has a stepped shape. Note that the shape of the spacer layer 120 is not limited to the illustrated example and can be changed as appropriate.

[0128] Figure 9 is a diagram illustrating an example of the configuration of an imaging device according to the first embodiment. Figure 9 shows an example of the configuration in the central region R1 of the pixel array 100 and in regions R2 to R4 that are located away from the center of the pixel array 100. Region R2 of the pixel array 100 is located further from the center of the pixel array 100 compared to region R1.

[0129] Region R3 in the pixel array 100 is located further from the center of the pixel array 100 than region R2, and has a higher image height than region R2. Similarly, region R4 in the pixel array 100 is located further from the center of the pixel array 100 than region R3, and has a higher image height than region R3.

[0130] Furthermore, the white arrows in the figure schematically indicate the incident light on the optical layer 130 in each of regions R1 to R4. As shown in the example in Figure 9, light from the optical system (optical lenses, etc.) is incident almost perpendicularly on the central part of the pixel array 100 of the imaging device 1. Light is incident at an oblique angle on regions away from the center of the pixel array 100.

[0131] The imaging device 1 is configured such that the thickness of the spacer layer 120 varies depending on the distance from the center of the pixel array 100, as shown in the example in Figure 9. For example, the further away a region is from the center of the pixel array 100, the thinner the spacer layer 120 is in that region. The spacer layer 120 may be configured such that its thickness gradually decreases as the image height increases.

[0132] As shown in Figure 10, the thickness t2 of the spacer layer 120 in region R2 is thinner (smaller) than the thickness t1 of the spacer layer 120 in region R1. The thickness t3 of the spacer layer 120 in region R3 is thinner than the thickness t2 of the spacer layer 120 in region R2. Also, the thickness t4 of the spacer layer 120 in region R4 is thinner than the thickness t3 of the spacer layer 120 in region R3.

[0133] As described above, the imaging device 1 according to this embodiment is configured such that the thickness of the spacer layer 120 is reduced in areas away from the central part of the pixel array 100. In the imaging device 1, the thickness of the spacer layer 120 is adjusted according to the image height, making it possible to appropriately focus light onto the photoelectric conversion unit 11 of each pixel P.

[0134] Figure 11 shows an example of the configuration of an imaging device according to a comparative example. Figure 11(A) shows the cross-sectional configuration of the imaging device according to the comparative example. Figure 11(B) is a schematic diagram of the light-gathering spot formed below the filter of each pixel, viewed from the light incident side, and is shown in correspondence with Figure 10(A).

[0135] If the spacer layer has a certain thickness, as shown in Figure 11, in areas far from the center of the imaging device's chip (i.e., the center of the pixel array) (especially in high-image-height areas), the light-gathering spot may deviate significantly from the center of the pixel due to light entering the optical layer at an oblique angle. This could reduce the amount of light received by the photoelectric conversion unit, potentially degrading image quality.

[0136] The imaging device 1 according to this embodiment is configured such that the thickness of the spacer layer 120 decreases with increasing distance from the center of the pixel array 100, as shown in the examples in Figures 10 and 12(A). Therefore, as shown in the example in Figure 12(B), light can be focused to the center of the pixel. Even in high-image-height regions R3 and R4, a focused spot can be formed near the center of the pixel, making it possible to suppress shading.

[0137] In the imaging device 1, light can be efficiently focused to the photoelectric conversion unit 11 of each pixel P, improving the characteristics for obliquely incident light. Quantum efficiency (QE) can be improved, enhancing sensitivity to incident light. This allows for improved image quality using the pixel signals of each pixel.

[0138] Figure 13 is a diagram illustrating another configuration example of the imaging device according to the first embodiment. In Figure 13, configuration examples are shown for the central region R1 of the pixel array 100 and regions R2 to R4 located away from the center of the pixel array 100. The imaging device 1 may be configured such that the positions of each light guide region 60 (light guide region 60b, light guide region 60g, light guide region 60r, etc.) having a structure 50 differ depending on the distance from the center of the pixel array 100.

[0139] In each region away from the center of the pixel array 100 (regions R2, R3, and R4 in Figure 13), a light guide region 60 having a structure 50 is positioned, for example, shifted towards the center of the pixel array 100 relative to the photoelectric conversion unit 11. In the example shown in Figure 13, the light guide region 60 is provided shifted to the left relative to the photoelectric conversion unit 11 of the pixel P.

[0140] In the imaging device 1, for example, the center of the light guide region 60 of a pixel P is located closer to the center of the pixel array 100 than the center of the photoelectric conversion unit 11 (or filter 20) of that pixel P. The position of the structure 50 and the position of the light guide region 60 are adjusted according to the image height, allowing pupil correction to be performed. The imaging device 1 can suppress a decrease in the amount of light incident on the photoelectric conversion unit 11 of each pixel P. This makes it possible to further improve the characteristics for obliquely incident light.

[0141] Figures 14A to 14H show an example of a manufacturing method for an imaging device according to the first embodiment. Photoelectric conversion units 11 and elements such as transistors are formed on the semiconductor layer 110 for each pixel P. Also, as shown in Figure 14A, a spacer layer 120 including a filter layer 115 on which a filter 20 is provided is formed on the surface 11S1 of the semiconductor layer 110.

[0142] Then, as shown in Figures 14B and 14C, the mold 90 formed by thermal (or UV) nanoimprinting is pressed against the spacer layer 120. This creates a surface 12S1 of the spacer layer 120 that is a curved surface at the chip size level, as shown in Figure 14D. The shape of the surface 12S1 of the spacer layer 120 can be adjusted by the surface shape of the mold 90, etc.

[0143] Next, as shown in Figure 14E, a member 55 made of, for example, a low refractive index material is formed on the surface 12S1 of the spacer layer 120. Furthermore, as shown in Figure 14F, a region for the structure 50 in each pixel P is formed by partially removing the member 55 by etching (for example, dry etching).

[0144] Then, after depositing a high refractive index material onto the component 55, the unnecessary portion of the high refractive index material is removed to form the structure 50 as shown in Figure 14G. Subsequently, a reflection suppression film 58 is deposited as shown in Figure 14H. By the above manufacturing method, the imaging device 1 shown in Figure 7, etc., can be manufactured.

[0145] Figures 15A to 15C illustrate another example of a method for manufacturing an imaging device according to the first embodiment. Figures 15A to 15C show another example of a method for manufacturing the spacer layer 120. As shown in Figure 15A, a mask pattern 91 (e.g., a resist film) is formed on the spacer layer 120 as an etching protective film.

[0146] As shown in Figure 15B, after the mask pattern 91 is formed, isotropic etching (dry etching or wet etching) is performed on the spacer layer 120. As a result, as shown in Figure 15C, the surface 12S1 of the spacer layer 120 is processed to have a curved surface. The spacer layer 120 can be manufactured by the above manufacturing method. Note that the above manufacturing method is merely an example, and other manufacturing methods may be used.

[0147] [Effects / Effects] The photodetector according to this embodiment comprises an optical layer (optical layer 130) having a plurality of structures (structure 50), a semiconductor layer (semiconductor layer 110), a spacer layer (spacer layer 120) provided between the optical layer and the semiconductor layer, and a pixel array (pixel array 100) having a plurality of pixels, each including a photoelectric conversion element (photoelectric conversion unit 11) provided on the semiconductor layer. The pixel array includes a first region (e.g., region R1) and a second region (region R2, region R3, or region R4) located further from the center of the pixel array than the first region. The thickness of the spacer layer in the second region is thinner than the thickness of the spacer layer in the first region.

[0148] The photodetector (imaging device 1) according to this embodiment includes a spacer layer 120 provided between the optical layer 130 and the semiconductor layer 110. The thickness of the spacer layer 120 in a region located away from the center of the pixel array 100, for example, region R4, is thinner than the thickness of the spacer layer 120 in region R1. This makes it possible to realize a photodetector capable of improving the characteristics for obliquely incident light.

[0149] Next, modified examples of the present disclosure will be described. In the following, components similar to those in the above embodiments will be denoted by the same reference numerals, and their descriptions will be omitted as appropriate.

[0150] (Variation 1) Figure 16 is a diagram illustrating an example configuration of an imaging device according to Modification 1 of the present disclosure. The imaging device 1 may be configured such that the thickness of the optical layer 130 differs depending on the distance from the center of the pixel array 100. For example, the optical layer 130 is provided such that the thickness of the optical layer 130 in a region far from the center of the pixel array 100 is thinner than the thickness of the optical layer 130 in a region near the center of the pixel array 100.

[0151] The imaging device 1 is configured such that, for example, as shown in Figure 16, the thickness of the optical layer 130 in the Z-axis direction becomes thinner as it moves away from the center of the pixel array 100. The further away a region is from the center of the pixel array 100, the thinner (smaller) the thickness of the optical layer 130 in that region becomes.

[0152] In the example shown in Figure 16, the thickness of the optical layer 130 in region R2 of the pixel array 100 is thinner than the thickness of the optical layer 130 in region R1. The thickness of the optical layer 130 in region R3 is thinner than the thickness of the optical layer 130 in region R2. Also, the thickness of the optical layer 130 in region R4 is thinner than the thickness of the optical layer 130 in region R3.

[0153] Figure 17 is a diagram illustrating another configuration example of the imaging device according to Modification 1. The optical layer 130 may be configured such that, for example, the thickness of the optical layer 130 in a region away from the center of the pixel array 100 is greater than the thickness of the optical layer 130 in the central region of the pixel array 100.

[0154] The imaging device 1 is configured such that, for example, as shown in Figure 17, the thickness of the optical layer 130 in the Z-axis direction increases as it moves away from the center of the pixel array 100. The further away a region is from the center of the pixel array 100, the thicker (larger) the optical layer 130 is determined to be in that region.

[0155] In the example shown in Figure 17, the thickness of the optical layer 130 in region R2 of the pixel array 100 is greater than the thickness of the optical layer 130 in region R1. The thickness of the optical layer 130 in region R3 is greater than the thickness of the optical layer 130 in region R2. Also, the thickness of the optical layer 130 in region R4 is greater than the thickness of the optical layer 130 in region R3.

[0156] In the imaging device 1 according to this modified example, the thickness of the optical layer 130 is adjusted according to the image height, thereby enabling appropriate light to be focused to the photoelectric conversion unit 11 of each pixel P. The shape of the optical layer 130 is not limited to the illustrated example and can be changed as appropriate. The optical layer 130 may be configured to have a curved surface or a stepped surface.

[0157] (Modification 2) Figure 18 is a diagram illustrating an example of the configuration of an imaging device according to Modification 2. The imaging device 1 may have a lens 25, as shown in the example in Figure 18. The lens 25 (lens portion) is provided between the optical layer 130 having the structure 50 and the semiconductor layer 110 having the photoelectric conversion unit 11. The lens 25 is provided as an intralayer lens and guides light incident from above toward the photoelectric conversion unit 11.

[0158] The lens 25 (i.e., an intralayer lens) is configured to focus the incident light. A lens 25 is provided for each pixel P or for each set of pixels P. The lens 25 is made of, for example, silicon oxide, silicon nitride, or silicon oxynitride. However, the lens 25 may also be formed using other light-transmitting materials.

[0159] For example, the lens 25 is formed above the filter 20 within the spacer layer 120. The lens 25 is located between the optical layer 130 and the filter layer 115, which includes the filter 20. In the imaging device 1, the lens 25 (intra-layer lens) adjusts the direction of light propagation, allowing light to be efficiently focused to the photoelectric conversion unit 11.

[0160] Figure 19 is a diagram illustrating another configuration example of the imaging device according to Modification 2. In the imaging device 1, the thickness (height) of the lens 25 may be configured to differ depending on the distance from the center of the pixel array 100. For example, the further away a region is from the center of the pixel array 100, the thinner (lower) the thickness of the lens 25 in the Z-axis direction in that region is determined to be.

[0161] In the example shown in Figure 19, the thickness (height) of lens 25 in region R2 of pixel array 100 is thinner than the thickness of lens 25 in region R1. The thickness of lens 25 in region R3 is thinner than the thickness of lens 25 in region R2. Also, the thickness of lens 25 in region R4 is thinner than the thickness of lens 25 in region R3.

[0162] Figures 20A to 20D illustrate an example of a manufacturing method for an imaging device according to Modification 2. Figures 20A to 20D show an example of a manufacturing method for a spacer layer 120. After forming a filter layer 115 having a filter 20 on a semiconductor layer 110, a member 95 that will be the base material for the lens 25 is formed on the filter layer 115, as shown in Figure 20A.

[0163] Next, as shown in Figure 20B, a resist film 96 is formed on the member 95. Then, by etching (i.e., etch-back) the member 95 through the resist film 96, the lens 25 is formed as shown in Figure 20C. Furthermore, by utilizing a planarization process using reflow, a spacer layer 120 having a curved surface 12S1 is formed as shown in Figure 20D.

[0164] (Variation 3) Figures 21 and 22 are diagrams illustrating an example of the configuration of an imaging device according to Modification 3. The optical layer 130 of the imaging device 1 may have multiple layers (multiple stages) of structures 50. The optical layer 130 has multiple structures 50, for example, structures 50a and structures 50b, which are arranged to be stacked on top of each other. As an example, the light guide region 60 of each pixel P has a first stage structure 50a and a second stage structure 50b.

[0165] As shown in Figure 22, the optical layer 130 has a layer 131 (first layer) including a structure 50a and a member 55a, and a layer 132 (second layer) including a structure 50b and a member 55b. Layer 132 is provided laminated on top of layer 131. Structures 50a and 50b each have, for example, a columnar shape.

[0166] Structure 50a and member 55a are constructed, for example, using materials with different refractive indices. Similarly, structure 50b and member 55b are constructed, for example, using materials with different refractive indices. The shapes and number of structures 50a and 50b are not limited to the illustrated examples and can be changed as appropriate.

[0167] In the imaging device 1 according to this modified example, light can be appropriately guided to the photoelectric conversion unit 11 by an optical layer 130 having multiple layers of structures (for example, structures 50a and 50b). This makes it possible to improve the performance of the optical layer 130 (metamaterial layer). The optical layer 130 may have three or more layers of structures (nanostructures).

[0168] <2. Second Embodiment> Next, a second embodiment of the present disclosure will be described. In the following, components similar to those in the embodiments described above will be denoted by the same reference numerals, and their descriptions will be omitted as appropriate.

[0169] Figures 23 and 24 are diagrams illustrating an example configuration of an imaging device according to a second embodiment of the present disclosure. The imaging device 1 according to this embodiment is configured such that the thickness of the optical layer 130 differs depending on the distance from the center of the pixel array 100. The optical layer 130 is provided such that the thickness of the optical layer 130 in a region far from the center of the pixel array 100 is thinner than the thickness of the optical layer 130 in a region near the center of the pixel array 100.

[0170] The imaging device 1 is configured such that, for example, the thickness (film thickness) of the optical layer 130 in the Z-axis direction becomes thinner as it moves away from the center of the pixel array 100 (i.e., as the image height increases). The further away a region is from the center of the pixel array 100, the thinner the thickness of the optical layer 130 in that region is determined to be. The spacer layer 120 is configured to have a constant thickness, for example.

[0171] As shown in Figure 24, the thickness t12 of the optical layer 130 in region R2 is thinner than the thickness t11 of the optical layer 130 in region R1. The thickness t13 of the optical layer 130 in region R3 is thinner than the thickness t12 of the optical layer 130 in region R2. Also, the thickness t14 of the optical layer 130 in region R4 is thinner than the thickness t13 of the optical layer 130 in region R3.

[0172] The imaging device 1 according to this embodiment is configured such that the thickness of the optical layer 130 decreases with increasing distance from the center of the pixel array 100. Therefore, as shown in the example in Figure 25, light can be focused towards the center of the pixel. Even in high-image-height regions R3 and R4, a focused spot can be formed near the center of the pixel, suppressing shading. This makes it possible to suppress a decrease in image quality.

[0173] [Effects / Effects] The photodetector according to this embodiment comprises an optical layer (optical layer 130) having a plurality of structures (structure 50), a semiconductor layer (semiconductor layer 110), a spacer layer (spacer layer 120) provided between the optical layer and the semiconductor layer, and a pixel array (pixel array 100) having a plurality of pixels, each containing a photoelectric conversion element provided in the semiconductor layer. The pixel array includes a first region and a second region located further from the center of the pixel array than the first region. The thickness of the optical layer in the second region is thinner than the thickness of the optical layer in the first region.

[0174] The photodetector (imaging device 1) according to this embodiment includes an optical layer 130 having a plurality of structures 50. The thickness of the optical layer 130 in a region located away from the center of the pixel array 100, for example, region R4, is thinner than the thickness of the optical layer 130 in region R1. Therefore, it is possible to realize a photodetector capable of improving the characteristics for obliquely incident light.

[0175] Next, modified examples of the present disclosure will be described. In the following, components similar to those in the above embodiments will be denoted by the same reference numerals, and their descriptions will be omitted as appropriate.

[0176] (Modification 4) Figure 26 is a diagram illustrating an example of the configuration of an imaging device according to Modification 4 of the present disclosure. The imaging device 1 may be configured such that the thickness of the spacer layer 120 differs depending on the distance from the center of the pixel array 100. For example, the spacer layer 120 is provided such that the thickness of the spacer layer 120 in a region far from the center of the pixel array 100 is greater than the thickness of the spacer layer 120 in a region near the center of the pixel array 100.

[0177] Furthermore, the optical layer 130 is provided such that the thickness of the optical layer 130 in areas away from the center of the pixel array 100 is thinner than the thickness of the optical layer 130 in the central area of ​​the pixel array 100. In the imaging device 1, the thickness of the optical layer 130 and the spacer layer 120 are adjusted according to the image height, making it possible to properly focus light onto the photoelectric conversion unit 11 of each pixel P.

[0178] <3. Third Embodiment> Next, a third embodiment of the present disclosure will be described. In the following, components similar to those in the embodiments described above will be denoted by the same reference numerals, and their descriptions will be omitted as appropriate.

[0179] Figure 27 is a diagram illustrating an example configuration of an imaging device according to a third embodiment of the present disclosure. In the imaging device 1 according to this embodiment, the spacer layer 120 is configured such that the effective refractive index differs depending on the distance from the center of the pixel array 100. For example, the spacer layer 120 may be configured such that the effective refractive index for light in the wavelength range to be measured increases as it moves away from the center of the pixel array 100.

[0180] The spacer layer 120 may be composed of, for example, multiple layers (multiple stages) of material. In the example shown in Figure 27, the spacer layer 120 has a spacer layer 121 and a spacer layer 122. The spacer layer 120 has a structure in which spacer layer 121 and spacer layer 122 are stacked. Spacer layer 121 and spacer layer 122 are formed using materials having different refractive indices.

[0181] For example, the spacer layer 122 is configured to have a higher refractive index than the spacer layer 121. At least one of the spacer layers 121 and 122 may be an insulating layer made of an insulating film such as silicon oxide, silicon oxynitride, or silicon nitride. At least one of the spacer layers 121 and 122 may also be a resin layer made of a resin material.

[0182] The spacer layer 120 is configured such that the thickness (film thickness) of the spacer layer 122, which has a relatively high refractive index, increases as it moves away from the center of the pixel array 100, as shown in the example in Figure 27. The further away a region is from the center of the pixel array 100, the thicker the spacer layer 122 is in the Z-axis direction in that region.

[0183] Furthermore, the spacer layer 120 is configured such that the thickness of the spacer layer 121, which has a relatively low refractive index, decreases as it moves away from the center of the pixel array 100. The further away a region is from the center of the pixel array 100, the thinner the Z-axis thickness of the spacer layer 121 in that region becomes. The optical layer 130 may have a constant thickness, or it may have different thicknesses depending on the image height.

[0184] In imaging device 1, for example, the thickness of the spacer layer 121 in region R2 is thinner than the thickness of the spacer layer 121 in region R1. The thickness of the spacer layer 121 in region R3 is thinner than the thickness of the spacer layer 121 in region R2. Also, the thickness of the spacer layer 121 in region R4 is thinner than the thickness of the spacer layer 121 in region R3.

[0185] Furthermore, the thickness of the spacer layer 122 in region R2 is greater than the thickness of the spacer layer 122 in region R1. The thickness of the spacer layer 122 in region R3 is greater than the thickness of the spacer layer 122 in region R2. Furthermore, the thickness of the spacer layer 122 in region R4 is greater than the thickness of the spacer layer 122 in region R3.

[0186] In imaging device 1, for example, the effective refractive index of spacer layer 120 in region R2 (i.e., the effective refractive index due to spacer layers 121 and 122) is higher than the effective refractive index of spacer layer 120 in region R1. The effective refractive index of spacer layer 120 in region R3 is higher than the effective refractive index of spacer layer 120 in region R2. Also, the effective refractive index of spacer layer 120 in region R4 is higher than the effective refractive index of spacer layer 120 in region R3.

[0187] In the imaging device 1 according to this embodiment, the effective refractive index is adjusted according to the occupancy rate of the spacer layer 122 (or spacer layer 121), thereby changing the optical path length of the incident light. As a result, as shown in the example in Figure 28, it becomes possible to concentrate light to the center of the pixel. Shading can be suppressed, and image quality can be improved.

[0188] [Effects / Effects] The photodetector according to this embodiment comprises an optical layer (optical layer 130) having a plurality of structures (structure 50), a semiconductor layer (semiconductor layer 110), a spacer layer (spacer layer 120) provided between the optical layer and the semiconductor layer, and a pixel array (pixel array 100) having a plurality of pixels, each containing a photoelectric conversion element provided on the semiconductor layer. The pixel array includes a first region and a second region located further from the center of the pixel array than the first region. The spacer layer includes a first spacer layer (spacer layer 121) and a second spacer layer (spacer layer 122) provided stacked on the first spacer layer and having a different refractive index than the first spacer layer. The thickness of the first spacer layer in the second region is thinner than the thickness of the first spacer layer in the first region.

[0189] In the photodetector (imaging device 1) according to this embodiment, the spacer layer 120 has a spacer layer 121 and a spacer layer 122. The thickness of the spacer layer 121 in a region located away from the center of the pixel array 100, for example, region R4, is thinner than the thickness of the spacer layer 121 in region R1. Therefore, it is possible to realize a photodetector capable of improving the characteristics for obliquely incident light.

[0190] <4. Application Examples> The above-mentioned imaging device 1 can be applied to any type of electronic device equipped with an imaging function, such as camera systems like digital still cameras and video cameras, or mobile phones with imaging capabilities. Figure 29 shows a schematic configuration of the electronic device 1000.

[0191] The electronic device 1000 includes, for example, a lens group 1001, an imaging device 1, a DSP (Digital Signal Processor) circuit 1002, a frame memory 1003, a display unit 1004, a recording unit 1005, an operation unit 1006, and a power supply unit 1007, all of which are interconnected via a bus line 1008.

[0192] The lens group 1001 captures incident light (image light) from the subject and forms an image on the imaging surface of the imaging device 1. The imaging device 1 converts the amount of incident light formed on the imaging surface by the lens group 1001 into an electrical signal on a pixel-by-pixel basis and supplies it as a pixel signal to the DSP circuit 1002.

[0193] The DSP circuit 1002 is a signal processing circuit that processes signals supplied from the imaging device 1. The DSP circuit 1002 outputs image data obtained by processing the signals from the imaging device 1. The frame memory 1003 temporarily holds the image data processed by the DSP circuit 1002 on a frame-by-frame basis.

[0194] The display unit 1004 consists of a panel-type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and records the video or still image data captured by the imaging device 1 onto a recording medium such as a semiconductor memory or a hard disk.

[0195] The operation unit 1006 outputs operation signals for various functions possessed by the electronic device 1000 in accordance with user operations. The power supply unit 1007 appropriately supplies various power sources to the DSP circuit 1002, frame memory 1003, display unit 1004, recording unit 1005, and operation unit 1006.

[0196] <5. Application Examples> (Examples of applications to mobile devices) The technology disclosed herein (the Technology) can be applied to a variety of products. For example, the Technology disclosed herein may be implemented as a device mounted on any type of mobile vehicle, such as an automobile, electric vehicle, hybrid electric vehicle, motorcycle, bicycle, personal mobility device, airplane, drone, ship, or robot.

[0197] Figure 30 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technology described herein may be applied.

[0198] The vehicle control system 12000 comprises multiple electronic control units connected via a communication network 12001. In the example shown in Figure 30, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. The functional configuration of the integrated control unit 12050 is shown in the figure, which includes a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface 12053.

[0199] The drivetrain control unit 12010 controls the operation of devices related to the vehicle's drivetrain according to various programs. For example, the drivetrain control unit 12010 functions as a control device for a drivetrain generating device that generates driving force for the vehicle, such as an internal combustion engine or a drive motor; a drivetrain transmission mechanism that transmits driving force to the wheels; a steering mechanism that adjusts the steering angle of the vehicle; and a braking device that generates braking force for the vehicle.

[0200] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window system, or various lamps such as headlights, reverse lights, brake lights, turn signals, or fog lights. In this case, the body system control unit 12020 may receive radio waves transmitted from a portable device that replaces a key or signals from various switches. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock system, power window system, lamps, etc.

[0201] The external information detection unit 12030 detects information from outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the external information detection unit 12030. The external information detection unit 12030 causes the imaging unit 12031 to capture images of the outside of the vehicle and receives the captured images. Based on the received images, the external information detection unit 12030 may perform object detection processing such as detecting people, cars, obstacles, signs, or characters on the road surface, or distance detection processing.

[0202] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0203] The in-vehicle information detection unit 12040 detects information inside the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver status detection unit 12041 that detects the driver's state. The driver status detection unit 12041 includes, for example, a camera that images the driver, and the in-vehicle information detection unit 12040 may calculate the driver's level of fatigue or concentration, or determine whether the driver is drowsy, based on the detection information input from the driver status detection unit 12041.

[0204] The microcomputer 12051 can calculate control target values ​​for the drive force generator, steering mechanism, or braking system based on information from inside and outside the vehicle acquired by the external information detection unit 12030 or the internal information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing ADAS (Advanced Driver Assistance System) functions, including collision avoidance or impact mitigation, following based on distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning.

[0205] Furthermore, the microcomputer 12051 can perform cooperative control for purposes such as autonomous driving, where the vehicle drives autonomously without driver intervention, by controlling the drive force generating device, steering mechanism, or braking device, etc., based on information about the vehicle's surroundings acquired by the external information detection unit 12030 or the internal information detection unit 12040.

[0206] Furthermore, the microcomputer 12051 can output control commands to the body system control unit 12020 based on external information acquired by the external information detection unit 12030. For example, the microcomputer 12051 can control the headlights according to the position of a preceding or oncoming vehicle detected by the external information detection unit 12030, and perform coordinated control aimed at reducing glare, such as switching from high beams to low beams.

[0207] The audio-image output unit 12052 transmits at least one of audio and image output signals to an output device capable of visually or audibly notifying information to the vehicle's occupants or to those outside the vehicle. In the example shown in Figure 30, the output devices are exemplified as an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an onboard display and a head-up display.

[0208] Figure 31 shows an example of the installation position of the imaging unit 12031.

[0209] In Figure 31, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0210] The imaging units 12101, 12102, 12103, 12104, and 12105 are installed, for example, on the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle 12100. The imaging unit 12101 installed on the front nose and the imaging unit 12105 installed on the upper part of the windshield inside the vehicle mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 installed on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 installed on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 installed on the upper part of the windshield inside the vehicle is mainly used for detecting preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, or lanes.

[0211] Figure 31 shows an example of the imaging range of imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of imaging unit 12101 located on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of imaging units 12102 and 12103 located on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of imaging unit 12104 located on the rear bumper or back door. For example, by superimposing the image data captured by imaging units 12101 to 12104, an overhead view image of the vehicle 12100 can be obtained.

[0212] At least one of the imaging units 12101 to 12104 may have a function for acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera consisting of multiple image sensors, or an image sensor having pixels for phase difference detection.

[0213] For example, the microcomputer 12051, based on distance information obtained from imaging units 12101 to 12104, can determine the distance to each object within the imaging range 12111 to 12114 and the temporal change of this distance (relative speed to vehicle 12100). In particular, it can extract the nearest object on the vehicle 12100's path that is traveling in approximately the same direction as vehicle 12100 at a predetermined speed (e.g., 0 km / h or more) as the preceding vehicle. Furthermore, the microcomputer 12051 can set a predetermined distance to be maintained before the preceding vehicle and perform automatic braking control (including follow-and-stop control) and automatic acceleration control (including follow-and-start control), etc. In this way, cooperative control aimed at autonomous driving, where the vehicle drives autonomously without driver intervention, can be performed.

[0214] For example, the microcomputer 12051 can use distance information obtained from imaging units 12101 to 12104 to classify and extract three-dimensional object data related to three-dimensional objects, such as motorcycles, passenger cars, heavy vehicles, pedestrians, utility poles, and other three-dimensional objects, and use this data for automatic obstacle avoidance. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle. If the collision risk is above a set value and there is a possibility of collision, the microcomputer 12051 can provide driving assistance to avoid collisions by outputting a warning to the driver via the audio speaker 12061 or display unit 12062, or by performing forced deceleration or evasive steering via the drive system control unit 12010.

[0215] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared light. For example, the microcomputer 12051 can recognize pedestrians by determining whether or not pedestrians are present in the images captured by the imaging units 12101 to 12104. Such pedestrian recognition is performed, for example, by a procedure to extract feature points from the images captured by the imaging units 12101 to 12104 as infrared cameras, and a procedure to perform pattern matching on a series of feature points that indicate the contour of an object to determine whether or not it is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the imaging units 12101 to 12104 and recognizes a pedestrian, the audio-image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio-image output unit 12052 may also control the display unit 12062 to display an icon indicating a pedestrian at a desired position.

[0216] The above describes an example of a mobile control system to which the technology described herein can be applied. The technology described herein can be applied to, for example, the imaging unit 12031 of the configuration described above. Specifically, for example, the imaging device 1 can be applied to the imaging unit 12031. By applying the technology described herein to the imaging unit 12031, it becomes possible to obtain high-definition captured images. This makes it possible to perform high-precision control using captured images in the mobile control system.

[0217] (Examples of application to endoscopic surgical systems) The technology disclosed herein (the Technology) can be applied to a variety of products. For example, the Technology disclosed herein may be applied to an endoscopic surgical system.

[0218] Figure 32 is a diagram showing an example of a schematic configuration of an endoscopic surgical system to which the technology described herein (the technology) may be applied.

[0219] Figure 32 illustrates a surgeon (physician) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgical system 11000. As shown in the figure, the endoscopic surgical system 11000 consists of an endoscope 11100, other surgical instruments 11110 such as an insufflation tube 11111 and an energy treatment device 11112, a support arm device 11120 for supporting the endoscope 11100, and a cart 11200 equipped with various devices for endoscopic surgery.

[0220] The endoscope 11100 consists of a barrel 11101, the tip of which is inserted into the body cavity of the patient 11132 for a predetermined length, and a camera head 11102 connected to the base end of the barrel 11101. In the illustrated example, the endoscope 11100 is shown as a so-called rigid endoscope having a rigid barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible endoscope having a flexible barrel.

[0221] An opening into which an objective lens is fitted is provided at the tip of the endoscope tube 11101. A light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the tip of the endoscope tube by a light guide extending inside the endoscope tube 11101, and is irradiated through the objective lens towards the object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a straight-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0222] The camera head 11102 contains an optical system and an image sensor. Reflected light from the object being observed (observation light) is focused onto the image sensor by the optical system. The image sensor converts the observation light into electrical signals, generating an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. This image signal is transmitted as RAW data to the camera control unit (CCU) 11201.

[0223] The CCU11201 consists of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and other components, and comprehensively controls the operation of the endoscope 11100 and the display device 11202. Furthermore, the CCU11201 receives image signals from the camera head 11102 and performs various image processing operations on these image signals, such as development processing (demosaic processing), to display the image based on those image signals.

[0224] The display device 11202 displays an image based on an image signal that has been processed by the CCU 11201, under control from the CCU 11201.

[0225] The light source device 11203 consists of a light source such as an LED (Light Emitting Diode) and supplies illumination light to the endoscope 11100 when photographing the surgical area, etc.

[0226] The input device 11204 is an input interface for the endoscopic surgical system 11000. The user can input various information and instructions to the endoscopic surgical system 11000 via the input device 11204. For example, the user can input instructions to change the imaging conditions (type of light, magnification, focal length, etc.) of the endoscope 11100.

[0227] The treatment instrument control device 11205 controls the drive of the energy treatment instrument 11112 for purposes such as tissue cauterization, incision, or vascular sealing. The insufflation device 11206 delivers gas into the patient's body cavity via the insufflation tube 11111 to inflate the body cavity of the patient 11132 for the purpose of securing a field of view by the endoscope 11100 and securing the operator's working space. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various formats such as text, images, or graphs.

[0228] The light source device 11203, which supplies illumination light to the endoscope 11100 when photographing the surgical area, can be configured as a white light source consisting of, for example, an LED, a laser light source, or a combination thereof. When the white light source is configured as a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to time-divisionally capture images corresponding to each of the RGB light sources by irradiating the observation target with laser light from each RGB laser light source and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter on the image sensor.

[0229] Furthermore, the light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. By controlling the drive of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity, images can be acquired in time-division order, and these images can be combined to generate high dynamic range images without so-called black crushing and white clipping.

[0230] Furthermore, the light source device 11203 may be configured to supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in body tissue and irradiating with narrow-band light compared to the irradiation light used during normal observation (i.e., white light), so-called narrow-band imaging is performed to image predetermined tissues such as blood vessels on the surface of mucosa with high contrast. Alternatively, in special light observation, fluorescence observation may be performed to obtain an image from fluorescence generated by irradiation with excitation light. In fluorescence observation, excitation light is irradiated onto body tissue and fluorescence from the body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) is injected into body tissue and excitation light corresponding to the fluorescence wavelength of the reagent is irradiated onto the body tissue to obtain a fluorescence image. The light source device 11203 may be configured to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0231] Figure 33 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU 11201 shown in Figure 32.

[0232] The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so that they can communicate with one another.

[0233] The lens unit 11401 is an optical system provided at the connection point with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and then incident on the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses, including a zoom lens and a focus lens.

[0234] The imaging unit 11402 is composed of image sensors. The imaging unit 11402 may consist of one image sensor (a so-called single-chip type) or multiple image sensors (a so-called multi-chip type). If the imaging unit 11402 is composed of multiple chips, for example, each image sensor may generate an image signal corresponding to RGB, and these signals may be combined to obtain a color image. Alternatively, the imaging unit 11402 may be configured to have a pair of image sensors for acquiring image signals for the right eye and the left eye, respectively, corresponding to 3D (dimensional) display. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical area. In addition, if the imaging unit 11402 is composed of multiple chips, multiple lens units 11401 may be provided corresponding to each image sensor.

[0235] Furthermore, the imaging unit 11402 does not necessarily have to be located in the camera head 11102. For example, the imaging unit 11402 may be located inside the lens barrel 11101, directly behind the objective lens.

[0236] The drive unit 11403 is composed of actuators and, under control from the camera head control unit 11405, moves the zoom lens and focus lens of the lens unit 11401 along the optical axis by a predetermined distance. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted as appropriate.

[0237] The communication unit 11404 consists of communication devices for sending and receiving various types of information with the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

[0238] Furthermore, the communication unit 11404 receives control signals from the CCU 11201 to control the drive of the camera head 11102 and supplies them to the camera head control unit 11405. These control signals include information regarding imaging conditions, such as information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image.

[0239] The imaging conditions such as frame rate, exposure value, magnification, and focus may be specified by the user as appropriate, or they may be automatically set by the control unit 11413 of the CCU11201 based on the acquired image signal. In the latter case, the endoscope 11100 will be equipped with so-called AE (Auto Exposure), AF (Auto Focus), and AWB (Auto White Balance) functions.

[0240] The camera head control unit 11405 controls the driving of the camera head 11102 based on the control signal received from the CCU 11201 via the communication unit 11404.

[0241] The communication unit 11411 consists of a communication device for sending and receiving various types of information with the camera head 11102. The communication unit 11411 receives image signals transmitted from the camera head 11102 via the transmission cable 11400.

[0242] Furthermore, the communication unit 11411 transmits control signals to the camera head 11102 to control the driving of the camera head 11102. Image signals and control signals can be transmitted via telecommunications, optical communications, etc.

[0243] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data transmitted from the camera head 11102.

[0244] The control unit 11413 performs various controls related to imaging the surgical area, etc., by the endoscope 11100, and the display of the images obtained from imaging the surgical area, etc. For example, the control unit 11413 generates control signals to control the driving of the camera head 11102.

[0245] Furthermore, the control unit 11413 displays the captured image showing the surgical area on the display device 11202 based on the image signal processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical instruments such as forceps, specific biological sites, bleeding, mist when using the energy treatment device 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When the control unit 11413 displays the captured image on the display device 11202, it may use the recognition results to superimpose various surgical support information onto the image of the surgical area. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced, and the surgeon 11131 can proceed with the surgery with confidence.

[0246] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable compatible with electrical signal communication, an optical fiber compatible with optical communication, or a composite cable thereof.

[0247] In the illustrated example, communication was performed via a wired connection using the transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may be performed wirelessly.

[0248] The above describes an example of an endoscopic surgical system to which the technology described herein can be applied. The technology described herein can be suitably applied to, for example, the imaging unit 11402 provided on the camera head 11102 of the endoscope 11100. By applying the technology described herein to the imaging unit 11402, it becomes possible to provide a high-definition endoscope 11100.

[0249] Although the present disclosure has been described above with reference to embodiments, modifications, application examples, and application examples, the present technology is not limited to the above embodiments, and various modifications are possible. For example, although the above modifications were described as modifications of the above embodiments, the configurations of each modification can be combined as appropriate.

[0250] In the embodiments described above, an imaging device was used as an example; however, the light detection device of this disclosure can be any device that receives incident light and converts the light into an electric charge. The output signal may be an image information signal or a distance measurement information signal. The light detection device (imaging device) can be applied to an image sensor, a distance measurement sensor, etc. Furthermore, this disclosure is not limited to back-illuminated image sensors, but is also applicable to front-illuminated image sensors.

[0251] The light detection device according to this disclosure can also be used as a distance measuring sensor capable of measuring distance using the TOF (Time Of Flight) method. The light-receiving element (photoelectric conversion unit) of each pixel may be an APD (Avalanche Photo Diode). The light-receiving element may be composed of, for example, a SPAD (Single Photon Avalanche Diode). The light detection device (imaging device) can also be used as a sensor capable of detecting events, for example, an event-driven sensor (also called an EVS (Event Vision Sensor), EDS (Event Driven Sensor), DVS (Dynamic Vision Sensor), etc.).

[0252] An optical detection device according to one embodiment of the present disclosure comprises an optical layer having a plurality of structures, a semiconductor layer, a spacer layer provided between the optical layer and the semiconductor layer, and a pixel array having a plurality of pixels, each including a photoelectric conversion element provided in the semiconductor layer. The pixel array includes a first region and a second region located further from the center of the pixel array than the first region. The thickness of the spacer layer in the second region is thinner than the thickness of the spacer layer in the first region. This makes it possible to realize an optical detection device that can improve the characteristics for obliquely incident light.

[0253] A photodetection device according to an embodiment of the present disclosure comprises an optical layer having a plurality of structures, a semiconductor layer, a spacer layer provided between the optical layer and the semiconductor layer, and a pixel array having a plurality of pixels each including a photoelectric conversion element provided on the semiconductor layer. The pixel array includes a first region and a second region located farther from the center of the pixel array than the first region. A thickness of the optical layer in the second region is smaller than a thickness of the optical layer in the first region. Accordingly, it is possible to implement a photodetection device capable of improving characteristics with respect to obliquely incident light.

[0254] A photodetection device according to an embodiment of the present disclosure comprises an optical layer having a plurality of structures, a semiconductor layer, a spacer layer provided between the optical layer and the semiconductor layer, and a pixel array having a plurality of pixels each including a photoelectric conversion element provided on the semiconductor layer. The pixel array includes a first region and a second region located farther from the center of the pixel array than the first region. The spacer layer includes a first spacer layer and a second spacer layer provided to be stacked on the first spacer layer and having a refractive index different from that of the first spacer layer. A thickness of the first spacer layer in the second region is smaller than a thickness of the first spacer layer in the first region. Accordingly, it is possible to implement a photodetection device capable of improving characteristics with respect to obliquely incident light.

[0255] It should be noted that the effects described in the present specification are merely illustrative, and the present disclosure is not limited to the description, and may have other effects. Further, the present disclosure can also adopt the following configuration. (1) an optical layer having a plurality of structures, a semiconductor layer, a spacer layer provided between the optical layer and the semiconductor layer, a pixel array having a plurality of pixels each including a photoelectric conversion element provided on the semiconductor layer, and wherein the pixel array includes a first region and a second region located farther from the center of the pixel array than the first region, The thickness of the spacer layer in the second region is thinner than the thickness of the spacer layer in the first region. Light detection device. (2) The thickness of the spacer layer decreases as you move away from the center of the pixel array. The light detection device described in (1) above. (3) The plurality of pixels include a first pixel provided in the first region and a second pixel provided in the second region. The optical layer has a first light-guiding region provided corresponding to the first pixel and a second light-guiding region provided corresponding to the second pixel. The distance between the center of the photoelectric conversion element of the second pixel and the center of the second light guide region differs depending on the distance from the center of the pixel array. The light detection device described in (1) or (2) above. (4) The thickness of the optical layer in the second region is thinner than the thickness of the optical layer in the first region. The light detection device described in any one of (1) to (3) above. (5) The thickness of the optical layer decreases as you move away from the center of the pixel array. The light detection device described in any one of (1) to (4) above. (6) The thickness of the optical layer in the second region is greater than the thickness of the optical layer in the first region. The light detection device described in any one of (1) to (3) above. (7) The thickness of the optical layer increases as you move away from the center of the pixel array. The light detection device described in any one of (1) to (3) or (6) above. (8) The plurality of pixels include a first pixel provided in the first region and a second pixel provided in the second region. The first pixel has a first lens provided in the spacer layer, The second pixel has a second lens provided in the spacer layer. The light detection device described in any one of (1) to (7) above. (9) The thickness of the second lens is lower than the thickness of the first lens. The light detection device described in (8) above. (10) The optical layer has a member provided around the structure, The structure has a refractive index different from that of the member. The light detection device described in any one of (1) to (9) above. (11) The optical layer comprises a first layer on which the structure is provided, and a second layer on which the structure is provided and which is laminated on the first layer. The light detection device described in any one of (1) to (10) above. (12) An optical layer having multiple structures, Semiconductor layer, A spacer layer provided between the optical layer and the semiconductor layer, A pixel array having a plurality of pixels, each including a photoelectric conversion element provided in the semiconductor layer Equipped with, The pixel array includes a first region and a second region located further from the center of the pixel array than the first region. The thickness of the optical layer in the second region is thinner than the thickness of the optical layer in the first region. Light detection device. (13) The thickness of the optical layer decreases as you move away from the center of the pixel array. The light detection device described in (12) above. (14) The thickness of the spacer layer in the second region is greater than the thickness of the spacer layer in the first region. The light detection device described in (12) or (13) above. (15) A thickness of said spacer layer increases as distance from a center of said pixel array increases The photodetection device according to any one of (12) to (14). (16) an optical layer having a plurality of structures; a semiconductor layer; a spacer layer provided between said optical layer and said semiconductor layer; a pixel array having a plurality of pixels each including a photoelectric conversion element provided in said semiconductor layer, and comprising: said pixel array includes a first region and a second region located farther from a center of said pixel array than said first region, said spacer layer includes a first spacer layer and a second spacer layer provided to be stacked on said first spacer layer and having a refractive index different from that of said first spacer layer, a thickness of said first spacer layer in said second region is smaller than a thickness of said first spacer layer in said first region A photodetection device. (17) a thickness of said first spacer layer decreases as distance from a center of said pixel array increases The photodetection device according to (16). (18) a thickness of said second spacer layer in said second region is larger than a thickness of said second spacer layer in said first region The photodetection device according to (16) or (17). (19) a thickness of said second spacer layer increases as distance from a center of said pixel array increases The photodetection device according to any one of (16) to (18). (20) an optical system; a photodetection device that receives light transmitted through said optical system, and comprising: said photodetection device is an optical layer having a plurality of structures; a semiconductor layer; A spacer layer provided between the optical layer and the semiconductor layer, A pixel array having a plurality of pixels, each including a photoelectric conversion element provided in the semiconductor layer It has, The pixel array includes a first region and a second region located further from the center of the pixel array than the first region. The thickness of the spacer layer in the second region is thinner than the thickness of the spacer layer in the first region. electronic equipment. [Explanation of Symbols]

[0256] 1...Imaging device, 11...Photoelectric conversion unit, 50...Structure, 55...Component, 60...Light guide region, 110...Semiconductor layer, 120...Spacer layer, 130...Optical layer.

Claims

1. An optical layer having multiple structures, Semiconductor layer, A spacer layer provided between the optical layer and the semiconductor layer, A pixel array having a plurality of pixels, each including a photoelectric conversion element provided in the semiconductor layer Equipped with, The pixel array includes a first region and a second region located further from the center of the pixel array than the first region. The thickness of the spacer layer in the second region is thinner than the thickness of the spacer layer in the first region. Light detection device.

2. The thickness of the spacer layer decreases as you move away from the center of the pixel array. The light detection device according to claim 1.

3. The plurality of pixels include a first pixel provided in the first region and a second pixel provided in the second region. The optical layer has a first light-guiding region provided corresponding to the first pixel and a second light-guiding region provided corresponding to the second pixel. The distance between the center of the photoelectric conversion element of the second pixel and the center of the second light guide region differs depending on the distance from the center of the pixel array. The light detection device according to claim 1.

4. The thickness of the optical layer in the second region is thinner than the thickness of the optical layer in the first region. The light detection device according to claim 1.

5. The thickness of the optical layer decreases as you move away from the center of the pixel array. The light detection device according to claim 1.

6. The thickness of the optical layer in the second region is greater than the thickness of the optical layer in the first region. The light detection device according to claim 1.

7. The thickness of the optical layer increases as you move away from the center of the pixel array. The light detection device according to claim 1.

8. The plurality of pixels include a first pixel provided in the first region and a second pixel provided in the second region. The first pixel has a first lens provided in the spacer layer, The second pixel has a second lens provided in the spacer layer. The light detection device according to claim 1.

9. The thickness of the second lens is lower than the thickness of the first lens. The light detection device according to claim 8.

10. The optical layer has a member provided around the structure, The structure has a refractive index different from that of the member. The light detection device according to claim 1.

11. The optical layer comprises a first layer on which the structure is provided, and a second layer on which the structure is provided and which is laminated on the first layer. The light detection device according to claim 1.

12. An optical layer having multiple structures, Semiconductor layer, A spacer layer provided between the optical layer and the semiconductor layer, A pixel array having a plurality of pixels, each including a photoelectric conversion element provided in the semiconductor layer Equipped with, The pixel array includes a first region and a second region located further from the center of the pixel array than the first region. The thickness of the optical layer in the second region is thinner than the thickness of the optical layer in the first region. Light detection device.

13. The thickness of the optical layer decreases as you move away from the center of the pixel array. The light detection device according to claim 12.

14. The thickness of the spacer layer in the second region is greater than the thickness of the spacer layer in the first region. The light detection device according to claim 12.

15. The thickness of the spacer layer increases as you move away from the center of the pixel array. The light detection device according to claim 12.

16. An optical layer having multiple structures, Semiconductor layer, A spacer layer provided between the optical layer and the semiconductor layer, A pixel array having a plurality of pixels, each including a photoelectric conversion element provided in the semiconductor layer Equipped with, The pixel array includes a first region and a second region located further from the center of the pixel array than the first region. The spacer layer comprises a first spacer layer and a second spacer layer provided laminated on the first spacer layer and having a refractive index different from that of the first spacer layer. The thickness of the first spacer layer in the second region is thinner than the thickness of the first spacer layer in the first region. Light detection device.

17. The thickness of the first spacer layer decreases as it moves away from the center of the pixel array. The light detection device according to claim 16.

18. The thickness of the second spacer layer in the second region is greater than the thickness of the second spacer layer in the first region. The light detection device according to claim 16.

19. The thickness of the aforementioned second spacer layer increases as it moves away from the center of the pixel array. The light detection device according to claim 16.

20. Optical system and A light detection device that receives light transmitted through the optical system and Equipped with, The aforementioned light detection device is An optical layer having multiple structures, Semiconductor layer, A spacer layer provided between the optical layer and the semiconductor layer, A pixel array having a plurality of pixels, each including a photoelectric conversion element provided in the semiconductor layer It has, The pixel array includes a first region and a second region located further from the center of the pixel array than the first region. The thickness of the spacer layer in the second region is thinner than the thickness of the spacer layer in the first region. electronic equipment.

Images