Semiconductor equipment

Abstract

The objective is to provide a semiconductor device that can suppress pumping out of heat dissipation material, thereby suppressing an increase in the thermal resistance of the semiconductor module and a decrease in heat dissipation performance. [Solution] The semiconductor device according to this disclosure comprises a semiconductor module on which a heat sink is provided on the lower surface, a heat sink on which the semiconductor module is mounted on the upper surface, a heat dissipation material interposed between the heat sink and the heat sink, and a spacer provided between the semiconductor module and the heat sink, wherein the spacer is provided on the outside of the heat dissipation material in a plan view.

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor device. [Background Art]

[0002] A conventional technology is known that dissipates heat generated by a semiconductor module by interposing a heat dissipating material such as a heat dissipating sheet or grease between a heat sink and the semiconductor module.

[0003] A conventional structure of a semiconductor module and a heat sink is described, for example, in Patent Document 1. Patent Document 1 discloses a semiconductor device provided with a semiconductor module having a heat dissipation plate (base plate) and a heat sink on which the semiconductor module is mounted. Further, thermally conductive grease, which is a heat dissipating material, is interposed between the heat dissipation plate provided on the lower surface of the semiconductor module and the heat sink. [Prior Art Documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Unexamined Patent Publication No. 2023-129 [Summary of the Invention] [Problem to be Solved by the Invention]

[0005] In the conventional technology, when the semiconductor module is in operation, the heat dissipation plate deforms due to temperature rise, and this deformation causes pumping out, which is a phenomenon in which the heat dissipating material between the heat dissipation plate and the heat sink is pushed out. Further, when the semiconductor module is stopped, the heat dissipating material pushed out to the periphery of the semiconductor module absorbs outside air and contracts. As a result, voids are generated inside the heat dissipating material, which causes a problem that the thermal resistance of the semiconductor module increases and the heat dissipation performance decreases.

[0006] This disclosure is made to solve the above-mentioned problems and aims to provide a semiconductor device that can suppress pumping out of heat dissipation material and suppress the increase in thermal resistance and decrease in heat dissipation performance of the semiconductor module. [Means for solving the problem]

[0007] The semiconductor device according to this disclosure comprises a semiconductor module on its lower surface with a heat sink, a heat sink on which the semiconductor module is mounted on its upper surface, a heat dissipation material interposed between the heat sink and the heat sink, and a spacer provided between the semiconductor module and the heat sink, wherein the spacer is provided outside the heat dissipation material in a plan view. [Effects of the Invention]

[0008] The semiconductor device described herein can suppress pumping out of the heat dissipation material, thereby suppressing an increase in the thermal resistance of the semiconductor module and a decrease in heat dissipation performance. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic cross-sectional view of the semiconductor device according to Embodiment 1. [Figure 2] This is a schematic plan view of the semiconductor device according to Embodiment 1. [Figure 3] Figures 1 and 2 show a schematic cross-sectional view of a semiconductor device according to Embodiment 1, with the semiconductor device shown in the image mounted on a heatsink. [Figure 4] These are schematic cross-sectional and plan views of a semiconductor device when a conventional semiconductor module is attached to a heat sink. [Figure 5] These are schematic cross-sectional and plan views of a semiconductor device when a conventional semiconductor module is in operation. [Figure 6] These are schematic cross-sectional and plan views of a semiconductor device when a conventional semiconductor module has stopped working. [Figure 7]These are schematic cross-sectional and plan views of a semiconductor device when the semiconductor module according to Embodiment 1 is attached to a heat sink. [Figure 8] These are schematic cross-sectional and plan views of a semiconductor device when the semiconductor module according to Embodiment 1 is in operation. [Figure 9] This is an enlarged view of region A in Figure 8 of the semiconductor device when the semiconductor module according to Embodiment 1 is in operation. [Figure 10] These are schematic cross-sectional and plan views of a semiconductor device when the semiconductor module according to Embodiment 1 has stopped. [Figure 11] This graph shows the temperature change of the semiconductor module when the semiconductor module according to Embodiment 1 is operating and when it is stopped. [Figure 12] This is a schematic cross-sectional view of a semiconductor device according to a modified example 1 of Embodiment 1. [Figure 13] This is a schematic cross-sectional view of a semiconductor device according to a modified example 2 of Embodiment 1. [Figure 14] This is a schematic plan view of the semiconductor device according to Embodiment 2. [Figure 15] These are schematic cross-sectional and plan views of a semiconductor device when the semiconductor module according to Embodiment 2 is attached to a heat sink. [Figure 16] These are schematic cross-sectional and plan views of a semiconductor device when the semiconductor module according to Embodiment 2 is in operation. [Figure 17] These are schematic cross-sectional and schematic plan views of a semiconductor device when the semiconductor module according to Embodiment 2 is stopped. [Figure 18] These are schematic cross-sectional and plan views of a semiconductor device when the semiconductor module according to Embodiment 1 has stopped. [Figure 19] This is a schematic cross-sectional view of the semiconductor device according to Embodiment 3. [Figure 20] This is a schematic plan view of the semiconductor device according to Embodiment 3. [Figure 21] These are schematic cross-sectional and plan views of a semiconductor device when the semiconductor module according to Embodiment 3 is attached to a heat sink. [Figure 22] These are a schematic cross-sectional view and a schematic plan view of the semiconductor device when the semiconductor module according to the third embodiment operates. [Figure 23] These are a schematic cross-sectional view and a schematic plan view of the semiconductor device when the semiconductor module according to the third embodiment stops. DETAILED DESCRIPTION OF THE INVENTION

[0010] <Introduction> One side in a direction parallel to the depth direction of a semiconductor device is referred to as "upper", and the other side is referred to as "lower". Of the two main surfaces of a substrate, a layer or other members, one surface is referred to as an upper surface and the other surface is referred to as a lower surface. The directions of "upper" and "lower" are not limited to the direction of gravity or the direction when the semiconductor device is mounted.

[0011] In addition, for convenience of explanation, the following description will be given with the depth direction of the semiconductor device defined as the X-axis direction, the width direction of the semiconductor device intersecting the X-axis direction defined as the Y-axis direction, and the thickness direction or height direction of the semiconductor device, that is, the normal direction to the XY plane defined as the Z-axis direction.

[0012] In addition, the drawings are schematic diagrams; the mutual relationship between the sizes and positions of the images respectively shown in different drawings is not necessarily accurately described, and may be changed as appropriate. In the following description, identical or similar components are denoted by the same reference numerals in the drawings, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted.

[0013] Embodiment 1. Embodiment 1 will be described below with reference to the drawings. Figure 1 is a schematic cross-sectional view of the semiconductor device 100 according to Embodiment 1. Figure 2 is a schematic plan view of the semiconductor device 100 according to Embodiment 1. Figure 1 shows a cross-section along the dashed line X-X shown in Figure 2. In Figure 1, the fastening portion 10c is shown by a dotted line. Figure 2 is a horizontal cross-sectional view of the lower surface 30b of the heat dissipation material 30 of the semiconductor device 100 shown in Figure 1. In the following description of the present invention, "plan view" will be defined as a horizontal cross-sectional view of the lower surface 30b of the heat dissipation material 30 of the semiconductor device, similar to Figure 2. In the following description of the present invention, "plan view" will be defined as a viewpoint from below, with the lower surface 30b of the heat dissipation material 30 of the semiconductor device as the cross-section, as shown in Figure 2. Figure 3 is a schematic cross-sectional view of the semiconductor device 1000 showing the semiconductor device 100 shown in Figures 1 and 2 mounted on the heat sink 20.

[0014] The configurations of semiconductor devices 100 and 1000 will be explained using Figures 1 to 3. As shown in Figures 1 and 2, the semiconductor device 100 is a semiconductor device mounted on a heat sink 20 and comprises a semiconductor module 10 having a heat sink 1, a heat dissipation material 30 provided on the lower surface 1b of the heat sink 1, and a spacer 40 provided on the semiconductor module 10, the spacer 40 being provided outside the heat dissipation material 30 in a plan view.

[0015] As shown in Figure 3, the semiconductor device 1000 comprises a semiconductor module 10, a heat sink 20 on which the semiconductor module 10 is mounted, a heat dissipation material 30 interposed between the heat sink plate 1 of the semiconductor module 10 and the heat sink 20, and a spacer 40 provided between the semiconductor module 10 and the heat sink 20, wherein the spacer 40 is provided on the outside of the heat dissipation material 30 in a plan view.

[0016] First, a detailed example of the semiconductor module 10 configuration will be described using Figures 1-3. The semiconductor module 10 includes a heat sink 1.

[0017] The heat sink 1 is made of a material that has electrical and thermal conductivity. For example, the heat sink 1 is made of a metallic material such as copper or aluminum.

[0018] As shown in Figures 1 and 3, the insulating substrate 2 is provided on the upper surface 1a of the heat sink 1. The insulating substrate 2 is mounted on the upper surface 1a of the heat sink 1, for example, via solder. The insulating substrate 2 is made of an insulating resin, such as ceramic.

[0019] As shown in Figures 1 and 3, a metal pattern 3 is provided on the upper surface of the insulating substrate 2. The metal pattern 3 is made of a highly conductive metal such as copper.

[0020] As shown in Figures 1 and 3, the semiconductor element 4 is mounted on the metal pattern 3 via solder 5. Also, as shown in Figures 1 and 3, the semiconductor element 4 is joined to the terminal 6 via, for example, a wire W. The semiconductor element 4 may be made of Si, or it may be made of a wide-bandgap semiconductor such as SiC, GaN, or Ga2O3. There is no particular limit to the type of device of the semiconductor element 4, but it may be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), or it may be a freewheeling element.

[0021] Furthermore, as shown in Figures 1 to 3, the semiconductor module 10 may have a case member 7 on its outer periphery. The case member 7 is made of an insulating resin and is joined to the heat sink 1. Also, as shown in Figure 2, the case member 7 may be provided so as to surround the outer periphery of an insulating substrate 2 or the like which is placed on the heat sink 1. Also, as shown in Figures 1 and 3, the case member 7 may be bonded to the insulating substrate 2 with an adhesive 8.

[0022] Furthermore, as shown in Figures 1 to 3, the semiconductor module 10 is provided with fastening portions 10c. As shown in Figures 1 to 3, in this embodiment, the fastening portions 10c are provided on the case member 7. As shown in Figure 3, a fastening member F for fastening the semiconductor module 10 and the heat sink 20 is inserted into and attached to the fastening portion 10c. Furthermore, as shown in Figure 2, it is preferable that the fastening portions 10c be provided on the four outer corners of the semiconductor module 10.

[0023] Furthermore, as shown in Figures 1 and 3, the semiconductor module 10 may be sealed with a sealing material 9. As shown in Figure 1, in this embodiment, the sealing material 9 is provided inside the case member 7. The sealing material 9 is composed of, for example, an insulating gel or resin.

[0024] The semiconductor module 10 is configured as described above. The first fastening portion 10c on the semiconductor module 10 side may be provided on the heat sink 1.

[0025] Next, the heat dissipation material 30 will be described using Figures 1 to 3. In the case of semiconductor device 100, as shown in Figures 1 and 2, the heat dissipation material 30 is provided on the lower surface 1b of the heat sink 1. In the case of semiconductor device 1000, as shown in Figure 3, the heat dissipation material 30 is provided so as to be interposed between the heat sink 1 of the semiconductor module 10 and the heat sink 20. The heat dissipation material 30 is made of a material that has high thermal conductivity and flexibility. The heat dissipation material 30 is made of a TIM (Thermal Interface Material) such as thermal grease, thermal putty, or thermal sheet. The thickness of the heat dissipation material 30 is about 10 μm to 100 μm in the case of a thermal sheet, and about 50 μm to 100 μm in the case of thermal grease. The heat dissipation material 30 only needs to be provided at least directly below the heat sink 1, and does not need to be provided directly below the case member 7.

[0026] Next, the spacer 40 will be described using Figures 1 to 3. In the case of semiconductor device 100, as shown in Figures 1 and 2, the spacer 40 is provided on the semiconductor module 10. In the case of semiconductor device 100, as shown in Figures 1 and 2, the spacer 40 may be provided so as to be in contact with the lower surface 10b of the semiconductor module 10, and in this embodiment, as shown in Figures 1 and 2, the spacer 40 is provided so as to be in contact with the lower surface 1b of the heat sink 1 on the semiconductor module 10. In the case of semiconductor device 1000, as shown in Figure 3, the spacer 40 is provided between the semiconductor module 10 and the heat sink 20.

[0027] As shown in Figure 2, it is preferable that the spacer 40 be provided so as to surround the heat dissipation material 30 in a plan view, and as shown in Figure 2, the spacer 40 may be provided in a rectangular shape in a plan view. Furthermore, as shown in Figure 2, it is preferable that the spacer 40 be provided continuously in the circumferential direction so as to surround the heat dissipation material 30 in a plan view, but it may also be provided as points with gaps in between, rather than continuously in the circumferential direction so as to surround the heat dissipation material 30 in a plan view. In addition, as shown in Figure 3, it is preferable that the spacer 40 be provided so as to be in contact with the lower surface of the semiconductor module 10 and the upper surface of the heat sink 20, and it is preferable that the spacer 40 be made of an adhesive that hardens at a temperature above the heat generation temperature of the semiconductor module 10.

[0028] Next, the heat sink 20 will be described using Figure 3. As shown in Figure 3, the heat sink 20 has an upper surface 20a on which the semiconductor module 10 is mounted via a heat dissipation material 30. The heat sink 20 is made of a metal such as aluminum, which has high thermal conductivity. The heat sink 20 may also have fins formed on its lower surface 20b. The heat sink 20 also has a fastening portion 20c to which a fastening member F for fastening to the semiconductor module 10 is attached.

[0029] As described above, the semiconductor module 10 and the heat sink 20 each have fastening portions 10c and 20c, respectively, and fastening members F are inserted into each fastening portion 10c and 20c, fastening the semiconductor module 10 and the heat sink 20 together with the fastening members F. The fastening portion 10c may be a screw hole, and the fastening member F may be a screw or a nut, etc. Furthermore, as described above, it is preferable that each fastening portion 10c be provided at the four corners of the outer circumference, but it is sufficient to provide at least two or more, and they may be appropriately selected according to the size of the semiconductor device, etc. The fastening member F may also be inserted from the lower surface 20b side of the heat sink 20.

[0030] As described above, the semiconductor devices 100 and 1000 of this embodiment are configured. The semiconductor device 100 of this embodiment is a semiconductor device mounted on a heat sink 20 and comprises a semiconductor module 10 having a heat sink 1, a heat dissipation material 30 provided on the lower surface 1b of the heat sink 1, and a spacer 40 provided on the semiconductor module 10. The spacer 40 is provided outside the heat dissipation material 30 in a plan view. This configuration suppresses pumping out of the heat dissipation material 30 when the semiconductor device 100 is mounted on the heat sink 20 and the semiconductor module 10 is operating, thereby suppressing an increase in the thermal resistance of the semiconductor module 10 and a decrease in heat dissipation performance. Furthermore, as in the semiconductor device 1000 of this embodiment, the semiconductor device comprises a semiconductor module 10 having a heat sink 1, a heat sink 20 on which the semiconductor module 10 is mounted, a heat dissipation material 30 interposed between the heat sink 1 and the heat sink 20, and a spacer 40 provided between the semiconductor module 10 and the heat sink 20. By configuring the spacer 40 to be located outside the heat dissipation material 30 in a plan view, when the semiconductor module 10 is operating, pumping out of the heat dissipation material 30 can be suppressed, thereby suppressing an increase in the thermal resistance of the semiconductor module 10 and a decrease in the heat dissipation performance. The reason for this will be explained below.

[0031] First, for comparison with the semiconductor devices 100 and 1000 in this embodiment, a conventional semiconductor device 1000Z is shown in Figures 4 to 6 as a comparative example. Figure 4 is a schematic cross-sectional view and a schematic plan view of the semiconductor device 1000Z when the conventional semiconductor module 10 is attached to the heat sink 20. Figure 5 is a schematic cross-sectional view and a schematic plan view of the semiconductor device 1000Z when the conventional semiconductor module 10 is operating. Figure 6 is a schematic cross-sectional view and a schematic plan view of the semiconductor device 1000Z when the conventional semiconductor module 10 is stopped. For the sake of illustration convenience, some elements of the semiconductor module 10 have been omitted from the illustration. Also, in Figures 4 to 6, (a) indicates a cross-sectional view and (b) indicates a plan view.

[0032] Generally, the lower surface 1b of the heat sink 1, which is the heat dissipation surface of the semiconductor module 10, is often designed and controlled to be convex relative to the upper surface 20a of the heat sink 20 in order to reduce the thermal resistance between the heat sink 1 and the heat sink 20. However, as shown in Figure 4, when the semiconductor module 10 is attached to the heat sink 20, the lower surface 1b of the heat sink 1 deforms so as to bend away from the upper surface 20a of the heat sink 20.

[0033] When the semiconductor module 10 is in operation, the semiconductor element 4 generates heat, causing the lower surface 1b of the heat sink 1 to deform in a direction that moves closer to the upper surface 20a of the heat sink 20, as shown in Figure 5. Due to this deformation of the heat sink 1 and the thermal expansion of the heat dissipation material 30, the heat dissipation material 30 interposed between the heat sink 1 and the heat sink 20 is pushed outwards around the semiconductor device 1000Z, causing pumping out.

[0034] When the semiconductor module 10 is stopped, the semiconductor element 4 is cooled, and as shown in Figure 6, the lower surface 1b of the heat sink 1 deforms so as to bend away from the upper surface 20a of the heat sink 20. Due to this deformation of the heat sink 1 and the contraction of the heat dissipation material 30 interposed between the heat sink 1 and the heat sink 20, the heat dissipation material 30 pushed out around the semiconductor device 1000Z absorbs outside air, and as shown in Figure 6, voids B are generated inside the heat dissipation material 30. Because voids B are generated inside the heat dissipation material 30, the thermal resistance of the semiconductor module 10 increases, and the heat dissipation performance decreases.

[0035] Next, the semiconductor device 1000 of this embodiment is shown in Figures 7 to 11. Figure 7 is a schematic cross-sectional view and a schematic plan view of the semiconductor device 1000 when the semiconductor module 10 according to Embodiment 1 is attached to the heat sink 20. Figure 8 is a schematic cross-sectional view and a schematic plan view of the semiconductor device 1000 when the semiconductor module 10 according to Embodiment 1 is operating. Figure 9 is an enlarged view of region A in Figure 8 of the semiconductor device 1000 when the semiconductor module 10 according to Embodiment 1 is operating. Figure 10 is a schematic cross-sectional view and a schematic plan view of the semiconductor device 1000 when the semiconductor module 10 according to Embodiment 1 is stopped. In Figures 7, 8, and 10, (a) indicates a cross-sectional view and (b) indicates a plan view, respectively. For convenience of illustration, some elements of the semiconductor module 10 are omitted from the cross-sectional view (a), and the heat sink 20 is additionally shown in the plan view (b). Furthermore, in Figures 7 to 10, the spacer 40 is described as being made of an adhesive that hardens at a temperature above the heat generation temperature of the semiconductor module 10. Figure 11 is a graph showing the temperature change of the semiconductor module 10 when it is operating and stopped, when the spacer 40 is made of an adhesive that hardens at a temperature above the heat generation temperature of the semiconductor module 10. In Figure 11, t1 is shown as the time t when the semiconductor module 10 starts operating, and T1 is shown as the temperature of the semiconductor module 10 at t1. Also in Figure 11, t2 is shown as the time t when the adhesive spacer 40 hardens, and T2 is shown as the temperature of the semiconductor module 10 at t2. T2 represents the hardening temperature, which is the temperature at which the adhesive spacer 40 hardens. Also in Figure 11, t3 is shown as the time t when the semiconductor module 10 stops, and T3 is shown as the temperature of the semiconductor module 10 at t3.

[0036] As shown in Figure 7, when the semiconductor module 10 is attached to the heat sink 20, the lower surface 1b of the heat sink 1 deforms in a direction that curves away from the upper surface 20a of the heat sink 20, similar to Figure 4.

[0037] As shown in Figure 8, when the semiconductor module 10 is in operation, the lower surface 1b of the heat sink 1 deforms in a direction that approaches the upper surface 20a of the heat sink 20, similar to Figure 5. As shown in Figure 8, due to this deformation of the heat sink 1 and the thermal expansion of the heat dissipation material 30, the heat dissipation material 30 spreads outward in the outer direction. As shown in Figure 8, in the semiconductor device 1000 of Embodiment 1, a spacer 40 is provided outside the heat dissipation material 30 in a plan view. Therefore, even when the heat sink 1 deforms during the operation of the semiconductor module 10, the spacer 40 acts as a stopper, preventing the heat dissipation material 30 interposed between the heat sink 1 and the heat sink 20 from moving outside the spacer 40, and suppressing pumping out, where the heat dissipation material 30 is pushed outwards around the semiconductor device 1000.

[0038] Furthermore, if the spacer 40 is provided so as to surround the heat dissipation material 30 in a plan view, it is possible to further suppress the movement of the heat dissipation material 30 interposed between the heat sink plate 1 and the heat sink 20 outward from the spacer 40, and to further suppress the occurrence of pumping out, in which the heat dissipation material 30 is pushed outwards around the semiconductor device 1000.

[0039] Furthermore, if the spacer 40 is provided so as to be in contact with the lower surface 10b of the semiconductor module 10 and the upper surface 20a of the heat sink 20, the movement of the heat dissipation material 30 interposed between the heat sink 1 and the heat sink 20 outward from the spacer 40 can be further suppressed, and the occurrence of pumping out, in which the heat dissipation material 30 is pushed outwards around the semiconductor device 1000, can be further suppressed.

[0040] Further, when the spacer 40 is formed of an adhesive that cures at a temperature equal to or higher than the heat generation temperature of the semiconductor module 10, even if the heat sink 1 is deformed during operation of the semiconductor module 10, during the period of time t1 ≤ t < t2, the spacer 40 is in an uncured state and has fluidity. Therefore, the spacer 40 deforms following the deformation of the heat dissipation plate 1, and cures when time reaches t = t2. Accordingly, when the spacer 40 is formed of an adhesive that cures at a temperature equal to or higher than the heat generation temperature of the semiconductor module 10, even if the heat dissipation plate 1 is deformed, the adhesive can always be kept in contact with the lower surface 1b of the heat dissipation plate 1 and the upper surface 20a of the heat sink 20. Therefore, the heat dissipation material 30 interposed between the heat dissipation plate 1 and the heat sink 20 can be further suppressed from moving outward beyond the spacer 40, and the occurrence of pumping-out, in which the heat dissipation material 30 is extruded to the periphery of the semiconductor device 1000, can be further suppressed. Further, as shown in Fig. 9, in a state where the semiconductor module 10 generates heat and the adhesive serving as the spacer 40 is cured, it is preferable that the height H1 of the adhesive and the height H2 of the heat dissipation material 30 are equal. For example, compared to the case where H1 > H2, when H1 = H2, it is possible to suppress the occurrence of portions in the heat dissipation material 30 that do not contact the semiconductor module 10 or the heat sink 20, and thus further suppress an increase in the thermal resistance of the semiconductor module 10 and a decrease in heat dissipation performance. Furthermore, compared to the case where H1 < H2, when H1 = H2, it is possible to suppress bending of the heat dissipation member 30 caused by the heat dissipation material 30, and suppress the occurrence of cracking of the insulating substrate 2 due to bending stress. In order to achieve H1 = H2, when the semiconductor module 10 generates heat (time t2), for example, the timing at which the adhesive cures may be aligned with the timing at which the heat dissipation material 30 wets and spreads in the outer circumferential direction.

[0041] As shown in Figure 10, when the semiconductor module 10 is stopped, the lower surface 1b of the heat sink 1 deforms in a direction that bends away from the upper surface 20a of the heat sink 20, similar to Figure 6. As described above, when the semiconductor module 10 is in operation, the spacer 40 can suppress the occurrence of pumping out, in which the heat dissipation material 30 is pushed out around the semiconductor device 1000. Therefore, even when the heat sink 1 deforms and the heat dissipation material 30 interposed between the heat sink 1 and the heat sink 20 contracts when the semiconductor module 10 is stopped, the generation of voids B inside the heat dissipation material 30 can be suppressed. Accordingly, an increase in the thermal resistance of the semiconductor module 10 and a decrease in heat dissipation can be suppressed.

[0042] Next, the manufacturing method for the semiconductor devices 100 and 1000 of this embodiment will be described. The manufacturing method for the semiconductor devices 100 and 1000 of this embodiment is basically the same as conventional semiconductor device manufacturing methods, except for the spacer formation process, so the semiconductor module 10 formation process will be omitted from the explanation.

[0043] First, the manufacturing method of the semiconductor device 100 will be described. The manufacturing method of the semiconductor device 100 includes a heat dissipation material formation step and a spacer formation step.

[0044] First, the heat dissipation material formation process will be described. In the heat dissipation material formation process, a heat dissipation material 30 is formed on at least the lower surface 1b of the heat sink 1 of the semiconductor module 10. Thermal grease may be applied to the lower surface 1b of the heat sink 1, or a thermal sheet may be attached to the lower surface 1b of the heat sink 1.

[0045] Next, the spacer formation process will be described. In the spacer formation process, a spacer 40 is formed on the lower surface 10b of the semiconductor module 10, outside the heat dissipation material 30 in a plan view. Here, an example of a method for forming the spacer 40 will be described, in which case the spacer 40 is an adhesive that hardens at a temperature above the heat generation temperature of the semiconductor module 10. In this embodiment, the adhesive, which is the spacer 40, is applied to the lower surface 1b of the heat sink 1 so as to surround the heat dissipation material 30 in a plan view.

[0046] The semiconductor device 100 is manufactured through the process described above. As stated above, the manufacturing method of the semiconductor device 100 in this embodiment further includes a spacer formation step, in which a spacer 40 is formed on the lower surface 10b of the semiconductor module 10, outside the heat dissipation material 30 in a plan view. By forming the spacer 40 as described above, when the semiconductor device 100 is mounted on the heat sink 20 and the semiconductor module 10 is in operation, the pumping out of the heat dissipation material 30 is suppressed, thereby suppressing an increase in the thermal resistance of the semiconductor module 10 and a decrease in the heat dissipation performance.

[0047] Next, a method for manufacturing the semiconductor device 1000 will be described. The method for manufacturing the semiconductor device 1000 includes a heat dissipation material formation step, a spacer formation step, and a fastening step.

[0048] First, the heat dissipation material formation process will be explained. In the heat dissipation material formation process, a heat dissipation material 30 is formed on the lower surface 1b of the heat sink plate 1 of the semiconductor module 10 or on the upper surface 20a of the heat sink 20.

[0049] Next, the spacer formation process will be described. In the spacer formation process, a spacer 40 is formed on the lower surface 10b of the semiconductor module 10 or the upper surface 20a of the heat sink 20, outside the heat dissipation material 30 in a plan view. Here, an example of how to form the spacer 40 will be described, in the case where the spacer 40 is an adhesive that hardens at a temperature above the heat generation temperature of the semiconductor module. In this embodiment, the adhesive which is the spacer 40 is applied to the lower surface 1b of the heat sink 1 or the upper surface 20a of the heat sink 20 so as to surround the heat dissipation material 30 in a plan view. Note that the spacer formation process may be performed after the heat dissipation material formation process, or the spacer formation process may be performed first and then the heat dissipation material formation process.

[0050] Next, the fastening process will be described. In the fastening process, first, the semiconductor module 10 is mounted on the heat sink 20 via the heat dissipation material 30. Next, the fastening member F is inserted into the fastening portion 10c provided on the semiconductor module 10 and the heat sink 20. Then, the heat sink 20 and the semiconductor module 10 are fastened together with the fastening member F. In this way, the semiconductor module 10, the heat sink 20 and the heat dissipation material 30 can be brought into close contact.

[0051] The semiconductor device 1000 is manufactured through the process described above. As stated above, the manufacturing method of the semiconductor device 1000 of this embodiment further includes a spacer formation step, in which a spacer 40 is formed on the lower surface 10b of the semiconductor module 10 or the upper surface 20a of the heat sink 20, outside the heat dissipation material 30 in a plan view. By forming the spacer 40 as described above, when the semiconductor module 10 is in operation, the pumping out of the heat dissipation material 30 is suppressed, thereby suppressing an increase in the thermal resistance of the semiconductor module 10 and a decrease in the heat dissipation performance.

[0052] Next, a modified example of Embodiment 1 will be described using Figures 12 and 13. First, Modification 1 will be described using Figure 12. Figure 12 is a schematic cross-sectional view of the semiconductor device 100A according to Modification 1. In Figure 12, the fastening portion 10c is shown by a dotted line.

[0053] As shown in Figure 12, in the semiconductor device 100A of Modified Example 1, the spacer 40 is provided so as to be in contact with the case member 7. As shown in Figure 12, in the semiconductor device 100A of Modified Example 1, the semiconductor module 10A has a gap 10d between the case member 7 and the side surface 1c of the heat sink 1, and the spacer 40 is provided inside the gap 10d. It is desirable that the gap 10d and the spacer 40 are provided so as to surround the heat dissipation material 30 in a plan view. It is also desirable that the spacer 40 is made of an adhesive that hardens at a temperature above the heat generation temperature of the semiconductor module 10. Furthermore, it is desirable that the height H1 of the adhesive and the height H2 of the heat dissipation material 30 be the same when the semiconductor module 10 is generating heat and the adhesive spacer 40 has hardened. When the adhesive is provided as shown in Figure 12, the height H1 of the adhesive is the height from the lower surface 1b of the heat sink 1 to the upper surface 20a of the heat sink 20.

[0054] The semiconductor device 100A of Modified Example 1 can achieve the same effects as the semiconductor device 100 of Embodiment 1. Furthermore, in the semiconductor device 100A of Modified Example 1, since the spacer 40 is provided inside the gap 10d, for example, when the spacer 40 is made of an adhesive that hardens at a temperature higher than the heat generation temperature of the semiconductor module 10A, the spacer 40 can be easily formed, thereby improving the productivity of the semiconductor device.

[0055] Next, a modified example 2 will be described using Figure 13. Figure 13 is a schematic cross-sectional view of the semiconductor device 100B according to modified example 2. In Figure 13, the fastening portion 10c is shown by a dotted line.

[0056] As shown in Figure 13, in the semiconductor device 100B of Modification 2, the spacer 40 is provided so as to be in contact with the case member 7, similar to Modification 1. As shown in Figure 13, in the semiconductor device 100B of Modification 2, the case member 7 of the semiconductor module 10B has a recess 7d on its lower surface 7b, and the spacer 40 is provided inside the recess 7d. It is desirable that the recess 7d and the spacer 40 are provided so as to surround the heat dissipation material 30 in a plan view. It is also desirable that the spacer 40 is made of an adhesive that hardens at a temperature above the heat generation temperature of the semiconductor module 10. Furthermore, it is desirable that the height H1 of the adhesive and the height H2 of the heat dissipation material 30 be the same when the semiconductor module 10 is generating heat and the adhesive spacer 40 has hardened. When the adhesive is provided as shown in Figure 13, the height H1 of the adhesive is the height from the lower surface 1b of the heat sink 1 to the upper surface 20a of the heat sink 20.

[0057] The semiconductor device 100B of the modified example 2 can achieve the same effects as the semiconductor device 100 of the embodiment 1. Furthermore, in the semiconductor device 100B of the modified example 2, since the spacer 40 is provided inside the recess 7d, for example, when the spacer 40 is made of an adhesive that hardens at a temperature higher than the heat generation temperature of the semiconductor module 10B, the spacer 40 can be easily formed, thereby improving the productivity of the semiconductor device.

[0058] Embodiment 2. The semiconductor device 200 in Embodiment 2 will be described with reference to Figure 14. Figure 14 is a schematic plan view of the semiconductor device 200 according to Embodiment 2. It is assumed that the semiconductor device 200 in Embodiment 2 will be mounted in the vertical direction. The schematic cross-sectional view of the semiconductor device 200 is the same as that of Figure 1 and will be omitted. Furthermore, the schematic cross-sectional view of the semiconductor device 2000, which shows the semiconductor device 200 shown in Figure 14 mounted on the heat sink 20, is the same as that of Figure 3 and will be omitted.

[0059] As shown in Figure 14, in the semiconductor device 200 of Embodiment 2, the spacer 40 is provided in a trapezoidal shape so as to surround the heat dissipation material 30 in a plan view. In Figure 14, the length L1 of the left portion 40L of the spacer 40, which is located on the left side (negative side in the Y-axis direction) in Figure 14, is greater than the length L2 of the right portion 40R, which is located on the right side (positive side in the Y-axis direction) in Figure 14. In this case, when the semiconductor device 2000 is mounted, it is assumed that the left portion 40L of the spacer 40 is located on the upper side in the direction of gravity, and the right portion 40R of the spacer 40 is located on the lower side in the direction of gravity. The reason will be explained later. The spacer 40 may be provided on the lower surface 1b of the heat dissipation plate 1, or on the lower surface 7b of the case member 7.

[0060] The semiconductor device 2000, like the semiconductor device 1000, includes a heat sink 20 and a fastening member F.

[0061] As described above, the semiconductor devices 200 and 2000 of Embodiment 2 are configured. Similar to the semiconductor device 100 of Embodiment 1, the semiconductor device 200 of Embodiment 2 is configured such that the spacer 40 is provided on the semiconductor module 10 outside the heat dissipation material 30 in a plan view. Therefore, when the semiconductor device 200 is mounted on the heat sink 20 and the semiconductor module 10 is operating, the movement of the heat dissipation material 30 interposed between the heat sink 1 and the heat sink 20 outside the spacer 40 can be further suppressed, thereby suppressing pumping out of the heat dissipation material 30 being pushed out around the semiconductor device 2000, and suppressing an increase in the thermal resistance of the semiconductor module 10 and a decrease in heat dissipation performance. Furthermore, similar to the semiconductor device 1000 of Embodiment 1, the semiconductor device 2000 of Embodiment 2 is configured such that a spacer 40 is provided between the semiconductor module 10 and the heat sink 20, outside the heat dissipation material 30 in a plan view. Therefore, when the semiconductor module 10 is operating, pumping out of the heat dissipation material 30 is suppressed, thereby suppressing an increase in the thermal resistance of the semiconductor module 10 and a decrease in heat dissipation performance.

[0062] Furthermore, in the semiconductor devices 200 and 2000 of Embodiment 2, the spacer 40 is provided in a trapezoidal shape so as to surround the heat dissipation material 30 in a plan view. This makes it possible to suppress the amount of shrinkage when the heat dissipation material 30 contracts when the semiconductor module 10 is stopped. The reason for this is explained below.

[0063] Figures 15 to 17 show the semiconductor device 2000 of this embodiment. Figure 15 is a schematic cross-sectional view and a schematic plan view of the semiconductor device 2000 when the semiconductor module 10 according to Embodiment 2 is attached to the heat sink 20. Figure 16 is a schematic cross-sectional view and a schematic plan view of the semiconductor device 2000 when the semiconductor module 10 according to Embodiment 2 is operating. Figure 17 is a schematic cross-sectional view and a schematic plan view of the semiconductor device 2000 when the semiconductor module 10 according to Embodiment 2 is stopped. In Figures 15 to 17, (a) indicates a cross-sectional view and (b) indicates a plan view. For convenience of illustration, some elements of the semiconductor module 10 are omitted from the cross-sectional view (a), and the heat sink 20 is additionally shown in the plan view (b). In Figures 15 to 17, the heat dissipation material 30 is assumed to be a fluid material such as thermal grease or thermal putty. Furthermore, in Figures 15-17, the spacer 40 is described as being made of an adhesive that hardens at a temperature above the heat generation temperature of the semiconductor module 10. In Figures 15-17, the semiconductor device 2000 is shown mounted in the vertical direction. That is, the semiconductor device 2000 is mounted such that the left part 40L of the spacer 40 is on the upper side in the direction of gravity (negative side in the Y-axis direction in Figures 15-17), and the right part 40R of the spacer 40 is on the lower side in the direction of gravity (positive side in the Y-axis direction in Figures 15-17). In the following description, this will simply be referred to as "mounted in the vertical direction". In Figure 17, L3 is the height of the heat dissipation material 30 and L4 is the amount of shrinkage of the heat dissipation material 30 when the semiconductor module 10 according to Embodiment 2 stops and the heat dissipation material 30 shrinks.

[0064] As shown in Figure 15, when the semiconductor module 10 is attached to the heat sink 20, the lower surface 1b of the heat sink 1 deforms in a direction that curves away from the upper surface 20a of the heat sink 20, similar to Figure 7. Note that the semiconductor device 2000 is mounted vertically, and the heat dissipation material 30 is fluid, so as shown in Figure 15, the heat dissipation material 30 flows downward in the direction of gravity (positive Y-axis direction in Figure 15).

[0065] As shown in Figure 16, when the semiconductor module 10 is in operation, the lower surface 1b of the heat sink 1 deforms in a direction that curves toward the upper surface 20a of the heat sink 20, similar to Figure 8. As shown in Figure 16, due to this deformation of the heat sink 1 and the thermal expansion of the heat dissipation material 30, the heat dissipation material 30 flows and spreads outwards in the direction of gravity (negative side in the Y-axis direction in Figure 16). As shown in Figure 16, in the semiconductor device 2000 of Embodiment 2, a spacer 40 is provided outside the heat dissipation material 30 in a plan view. Therefore, even if the heat sink 1 deforms when the semiconductor module 10 is in operation, the spacer 40 acts as a stopper, preventing the heat dissipation material 30 interposed between the heat sink 1 and the heat sink 20 from moving outwards beyond the spacer 40, and suppressing pumping out, where the heat dissipation material 30 is pushed outwards around the semiconductor device 2000.

[0066] As shown in Figure 17, when the semiconductor module 10 is stopped, the lower surface 1b of the heat sink 1 deforms in the same way as in Figure 10, bending away from the upper surface 20a of the heat sink 20. As shown in Figure 17, along with this deformation of the heat sink 1 and the contraction of the heat dissipation material 30, the heat dissipation material 30 flows in a direction that causes it to contract downward in the direction of gravity (positive Y-axis direction in Figure 17).

[0067] Here, as a comparative example of semiconductor device 2000, Figure 18 shows the state when semiconductor device 1000 is mounted vertically and semiconductor module 10 is stopped. Figure 18 is a schematic cross-sectional view and a schematic plan view of semiconductor device 1000 when semiconductor module 10 according to Embodiment 1 is stopped. In Figure 18, (a) is a cross-sectional view and (b) is a plan view. For the sake of illustration, some elements of the semiconductor module 10 are omitted from the cross-sectional view (a), and the heat sink 20 is additionally shown in the plan view (b). In Figure 18, the heat dissipation material 30 is assumed to be a fluid material such as thermal grease or thermal putty. In Figure 18, the spacer 40 is assumed to be made of an adhesive that hardens at a temperature above the heat generation temperature of the semiconductor module 10. In Figure 18, L3 is the height of the heat dissipation material 30 and L4 is the amount of shrinkage of the heat dissipation material 30 when the semiconductor module 10 according to Embodiment 1 is stopped and the heat dissipation material 30 shrinks.

[0068] As shown in Figures 17 and 18, the length L2 of the spacer 40 is smaller for semiconductor device 2000 than for semiconductor device 1000. Therefore, as shown in Figure 17, when the semiconductor module 10 is stopped, the height L3 of the heat dissipation material 30 when it shrinks can be increased for semiconductor device 2000 than for semiconductor device 1000, thus suppressing the amount of shrinkage L4 when the heat dissipation material 30 shrinks. Therefore, when the semiconductor device is mounted in the vertical direction, the decrease in thermal resistance and heat dissipation performance of the semiconductor module 10 can be further suppressed.

[0069] Embodiment 3. The semiconductor device 300 in Embodiment 3 will be described using Figures 19 and 20. Figure 19 is a schematic cross-sectional view of the semiconductor device 300 according to Embodiment 3. Figure 20 is a schematic plan view of the semiconductor device 300 according to Embodiment 3. Note that Figure 19 shows the cross-section along the dashed line X-X shown in Figure 20. Furthermore, schematic cross-sectional views of the semiconductor device 3000 showing the semiconductor device 300 mounted on the heat sink 20, as shown in Figures 19 and 20, are omitted. Note that in Figure 19, the fastening portion 10c is shown by a dotted line.

[0070] As shown in Figures 19 and 20, the semiconductor device 300 of Embodiment 3 has a spacer 40 composed of a first spacer 41 and a second spacer 42 located outside the first spacer 41 in a plan view. Furthermore, as shown in Figure 20, it is desirable that the first spacer 41 be provided so as to surround the heat dissipation material 30, and the second spacer 42 be provided so as to surround the first spacer 41. Also, as shown in Figure 20, the second spacer 42 is provided continuously in the circumferential direction, but the first spacer 41 may be provided as points with spacing in the circumferential direction. In addition, both the first spacer 41 and the second spacer 42 may each be provided as points with spacing in the circumferential direction. Furthermore, although the first spacer 41 and the second spacer 42 are provided in a rectangular shape in a plan view, their shapes are arbitrary. For example, the first spacer 41 and the second spacer 42 may each be provided in a circular shape in a plan view. Furthermore, the first spacer 41 may be provided in a circular shape in plan view, and the second spacer 42 may be provided in a rectangular shape in plan view. Also, the first spacer 41 and the second spacer 42 may each be provided in a trapezoidal shape in plan view. In addition, in Figures 19 and 20, both the first spacer 41 and the second spacer 42 are provided on the lower surface 1b of the heat sink 1, but both the first spacer 41 and the second spacer 42 may be provided on the lower surface 7b of the case member 7, or either the first spacer 41 or the second spacer 42 may be provided on the lower surface 1b of the heat sink 1 and the other on the lower surface 7b of the case member 7.

[0071] The semiconductor device 3000, like the semiconductor device 1000, includes a heat sink 20 and a fastening member F.

[0072] As described above, the semiconductor devices 300 and 3000 of Embodiment 3 are configured. Similar to the semiconductor device 100 of Embodiment 1, the semiconductor device 300 of Embodiment 3 is configured such that the spacer 40 is provided on the semiconductor module 10 outside the heat dissipation material 30 in a plan view. Therefore, when the semiconductor device 300 is mounted on the heat sink 20 and the semiconductor module 10 is operating, pumping out of the heat dissipation material 30 is suppressed, thereby suppressing an increase in the thermal resistance of the semiconductor module 10 and a decrease in the heat dissipation performance. Also, similar to the semiconductor device 1000 of Embodiment 1, the semiconductor device 3000 of Embodiment 3 is configured such that the spacer 40 is provided between the semiconductor module 10 and the heat sink 20 outside the heat dissipation material 30 in a plan view. Therefore, when the semiconductor module 10 is operating, pumping out of the heat dissipation material 30 is suppressed, thereby suppressing an increase in the thermal resistance of the semiconductor module 10 and a decrease in the heat dissipation performance.

[0073] Furthermore, in the semiconductor devices 300 and 3000 of Embodiment 3, the spacer 40 is composed of a first spacer 41 and a second spacer 42 located outside the first spacer 41 in a plan view. This further suppresses the heat dissipation material 30 from being pushed out of the semiconductor device. The reason for this is explained below.

[0074] Figures 21 to 23 show the semiconductor device 3000 of this embodiment. Figure 21 is a schematic cross-sectional view and a schematic plan view of the semiconductor device 3000 when the semiconductor module 10 according to Embodiment 3 is attached to the heat sink 20. Figure 22 is a schematic cross-sectional view and a schematic plan view of the semiconductor device 3000 when the semiconductor module 10 according to Embodiment 3 is operating. Figure 23 is a schematic cross-sectional view and a schematic plan view of the semiconductor device 3000 when the semiconductor module 10 according to Embodiment 3 is stopped. In Figures 21 to 23, (a) indicates a cross-sectional view and (b) indicates a plan view. For convenience of illustration, some elements of the semiconductor module 10 are omitted from the cross-sectional view (a), and the heat sink 20 is additionally shown in the plan view (b). In Figures 21 to 23, the spacer 40 is described as being made of an adhesive that hardens at a temperature above the heat generation temperature of the semiconductor module 10.

[0075] As shown in Figure 21, when the semiconductor module 10 is attached to the heat sink 20, the lower surface 1b of the heat sink 1 deforms in a direction that curves away from the upper surface 20a of the heat sink 20, similar to Figure 7.

[0076] As shown in Figure 22, when the semiconductor module 10 is in operation, the lower surface 1b of the heat sink 1 deforms in a direction that approaches the upper surface 20a of the heat sink 20, similar to Figure 8. As shown in Figure 22, due to this deformation of the heat sink 1 and the thermal expansion of the heat dissipation material 30, the heat dissipation material 30 spreads outward in the outer direction. As shown in Figure 22, in the semiconductor device 3000 of Embodiment 3, a first spacer 41 is provided outside the heat dissipation material 30 in a plan view, and a second spacer 42 is provided outside the first spacer 41 in a plan view. Therefore, even if the heat sink 1 deforms during the operation of the semiconductor module 10, both the first spacer 41 and the second spacer 42 function as stoppers. First, the first spacer 41 prevents the heat dissipation material 30 from moving outward beyond the first spacer 41. Even if the heat dissipation material 30 breaks through the first spacer and moves outward beyond the first spacer 41, the second spacer 42 prevents the heat dissipation material 30 from moving outward beyond the second spacer 42. Thus, the occurrence of pumping out, in which the heat dissipation material 30 interposed between the heat sink 1 and the heat sink 20 is pushed outward around the semiconductor device 3000, can be suppressed. Furthermore, if the first spacer 41 and the second spacer 42 are made of adhesives that harden at temperatures above the heat generation temperature of the semiconductor module 10, the occurrence of pumping out, in which the heat dissipation material 30 interposed between the heat sink 1 and the heat sink 20 is pushed outward around the semiconductor device 3000, can be further suppressed, as described above. Furthermore, as described above, the first spacers 41 may be provided as points with spacing in the circumferential direction. By doing so, the amount of first spacers 41 used can be reduced compared to the case where the first spacers 41 are provided continuously in the circumferential direction, and thus the manufacturing cost of the semiconductor device can be reduced.

[0077] As shown in Figure 23, when the semiconductor module 10 is stopped, the lower surface 1b of the heat sink 1 deforms in the same way as in Figure 10, bending away from the upper surface 20a of the heat sink 20. As described above, when the semiconductor module 10 is in operation, the first spacer 41 and the second spacer 42 can prevent the heat dissipation material 30 from moving outward beyond the first spacer 41 and the second spacer 42, and the occurrence of pumping out, in which the heat dissipation material 30 is pushed out around the semiconductor device 3000, can be further suppressed. Therefore, even when the heat sink 1 deforms and the heat dissipation material 30 interposed between the heat sink 1 and the heat sink 20 contracts when the semiconductor module 10 is stopped, the generation of voids B inside the heat dissipation material 30 can be further suppressed. Consequently, the decrease in the thermal resistance and heat dissipation performance of the semiconductor module 10 can be further suppressed.

[0078] The configurations shown in the embodiments described above are merely examples of the content of this disclosure and can be combined with other known technologies. Furthermore, the embodiments can be combined with each other, as well as with each other, and variations can be combined. Additionally, parts of the configuration can be omitted or modified without departing from the gist of this disclosure.

[0079] The various aspects of this disclosure are summarized below as an appendix. (Note 1) A semiconductor module with a heat sink on its lower side, On the upper surface, there is a heat sink on which the semiconductor module is mounted, A heat dissipation material interposed between the heat sink and the heat dissipation plate, The semiconductor module and the heat sink are provided with a spacer, The spacer is provided outside the heat dissipation material in a plan view of the semiconductor device. (Note 2) The semiconductor device according to Appendix 1, wherein the spacer is provided so as to surround the heat dissipation material in a plan view. (Note 3) The semiconductor device according to Appendix 1 or Appendix 2, wherein the spacer is provided so as to be in contact with the lower surface of the semiconductor module and the upper surface of the heat sink. (Note 4) The semiconductor device described in Appendix 3, wherein the spacer is made of an adhesive that hardens at a temperature above the heat generation temperature of the semiconductor module. (Note 5) The semiconductor device described in Appendix 4, wherein, in the hardened state of the adhesive, the height of the adhesive and the height of the heat dissipation material are the same. (Note 6) The semiconductor device according to any one of the appendices 1 to 5, wherein the spacer is provided so as to be in contact with the heat sink. (Note 7) The semiconductor module has a case member on its outer periphery, The semiconductor device according to any one of the appendices 1 to 6, wherein the spacer is provided so as to be in contact with the case member. (Note 8) The inner wall of the case member and the side surface of the heat sink are provided with a gap between them. The spacer is provided inside the gap, and is the semiconductor device described in Appendix 7. (Note 9) The case member has a recess on its lower surface, The spacer is provided inside the recess, and is the semiconductor device described in Appendix 7. (Note 10) The semiconductor device described in Appendix 2, wherein the spacer is provided in a trapezoidal shape in a plan view. (Note 11) The previous spacer is The first spacer, A semiconductor device according to any one of the appendices 1 to 10, comprising a second spacer provided outside the first spacer in a plan view. (Note 12) A semiconductor device mounted on a heatsink, A semiconductor module with a heat sink on its lower side, A heat dissipation material provided on the lower surface of the heat sink, The semiconductor module comprises a spacer provided in the semiconductor module, The spacer is provided outside the heat dissipation material in a plan view of the semiconductor device. [Explanation of Symbols]

[0080] 1 Heat sink, 1b bottom surface, 1c side surface, 7 case component, 7b bottom surface, 7c inner wall, 7d recess, 10 10A 10B semiconductor module, 10b bottom surface, 10d gap, 20 heat sink, 30 heat dissipation material, 40 spacer, 41 first spacer, 42 second spacer, 100 100A 100B 200 300 1000 1000Z 2000 3000 semiconductor device

Claims

1. A semiconductor module with a heat sink on its lower side, On the upper surface, there is a heat sink on which the semiconductor module is mounted, A heat dissipation material interposed between the heat sink and the heat dissipation plate, The semiconductor module and the heat sink are provided with a spacer, The spacer is provided outside the heat dissipation material in a plan view of the semiconductor device.

2. The semiconductor device according to claim 1, wherein the spacer is provided so as to surround the heat dissipation material in a plan view.

3. The semiconductor device according to claim 1 or claim 2, wherein the spacer is provided so as to be in contact with the lower surface of the semiconductor module and the upper surface of the heat sink.

4. The semiconductor device according to claim 3, wherein the spacer is made of an adhesive that hardens at a temperature above the heat generation temperature of the semiconductor module.

5. The semiconductor device according to claim 4, wherein, in the hardened state of the adhesive, the height of the adhesive and the height of the heat dissipation material are the same.

6. The semiconductor device according to claim 1 or claim 2, wherein the spacer is provided so as to be in contact with the heat sink.

7. The semiconductor module has a case member on its outer periphery, The semiconductor device according to claim 1 or claim 2, wherein the spacer is provided so as to be in contact with the case member.

8. The inner wall of the case member and the side surface of the heat sink are provided with a gap between them. The semiconductor device according to claim 7, wherein the spacer is provided inside the gap.

9. The case member has a recess on its lower surface, The semiconductor device according to claim 7, wherein the spacer is provided inside the recess.

10. The semiconductor device according to claim 2, wherein the spacer is provided in a trapezoidal shape in a plan view.

11. The previous spacer is The first spacer and The semiconductor device according to claim 1 or claim 2, comprising a second spacer provided outside the first spacer in a plan view.

12. A semiconductor device mounted on a heatsink, A semiconductor module with a heat sink on its lower side, A heat dissipation material provided on the lower surface of the heat sink, The semiconductor module comprises a spacer provided in the semiconductor module, The spacer is provided outside the heat dissipation material in a plan view of the semiconductor device.

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