Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus capable of automating the separation of substrates in a substrate laminate and the removal of powder from the substrates. [Solution] The substrate processing apparatus of the embodiment comprises a stand and a nozzle, the stand having an inclined surface whose height changes along the depth direction. A substrate stack made of multiple stacked substrates can be placed on the inclined surface of the stand, and by placing the substrate stack on the inclined surface with the stacking direction aligned with the depth direction, a shear force acts between adjacent substrates in the substrate stack. The nozzle is capable of spraying gas toward the substrate stack placed on the inclined surface of the stand.

Description

[Technical Field]

[0001] Embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method. [Background Art]

[0002] In a manufacturing process of producing a ceramic substrate as a substrate, the substrate is fired and solidified in a sintering step. At this time, from the viewpoint of improving manufacturing efficiency, a substrate laminate formed by stacking a plurality of substrates is formed, and the substrate laminate is heated to sinter the substrates. In the sintering step, the substrate laminate is heated in a state where powder serving as a release agent is sprinkled on each of the plurality of substrates. Accordingly, the sprinkled powder suppresses adhesion between the substrates in the substrate laminate.

[0003] In the manufacturing process of a ceramic substrate, after the substrates are sintered as described above, the plurality of substrates are separated from each other in the substrate laminate. Further, the adhered powder is removed from the substrates by, for example, jetting gas. In the manufacturing process of ceramic substrates, from the viewpoints of reducing variations in product quality and reducing the influence of the powder to be removed on workers, there is a demand for automating the separation of substrates from the substrate laminate and the removal of powder from the substrates. [Prior Art Document] [Patent Document]

[0004] [Patent Document 1] Japanese Unexamined Patent Publication No. 2024-126844 [Summary of Invention] [Problem to be Solved by the Invention]

[0005] A problem to be solved by the present invention is to provide a substrate processing apparatus and a substrate processing method that can automate separation of substrates from a substrate laminate and removal of powder from the substrates. [Means for Solving the Problem]

[0006] The substrate processing apparatus of this embodiment includes a base and a nozzle, the base having an inclined surface whose height changes along the depth direction. A substrate stack, in which multiple substrates are stacked, can be placed on the inclined surface of the base, and by placing the substrate stack on the inclined surface with the stacking direction aligned with the depth direction, a shear force acts between adjacent substrates in the substrate stack. The nozzle is capable of injecting gas toward the substrate stack placed on the inclined surface of the base. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic perspective view showing the configuration of a substrate processing apparatus according to the first embodiment. [Figure 2] Figure 2 is a schematic diagram showing an example of a state in which processing is being performed on a substrate stack placed on a stand in the substrate processing apparatus according to the first embodiment, in a cross-section perpendicular or substantially perpendicular to the width direction. [Figure 3] Figure 3 is a schematic diagram showing the state shown in the example in Figure 2, viewed from one side in the depth direction. [Figure 4] Figure 4 is a schematic diagram showing an example of a substrate stack placed on a stand in the substrate processing apparatus according to the first modified example, with a cross-section perpendicular or substantially perpendicular to the width direction. [Figure 5] Figure 5 is a schematic diagram showing an example of a substrate processing apparatus according to the first modified example, in a state different from Figure 4, where the substrate stack is placed on the stand, in a cross-section perpendicular or substantially perpendicular to the width direction. [Figure 6] Figure 6 is a schematic diagram showing an example of a state in which processing is being performed on a substrate stack placed on a stand in the substrate processing apparatus according to the second modified example, with a cross section perpendicular or substantially perpendicular to the width direction. [Figure 7] Figure 7 is a schematic flowchart illustrating an example of the control of gas injection and suction by a suction source performed by the control unit in the substrate processing apparatus according to the second modified example. [Figure 8]Figure 8 is a schematic diagram showing an example of the state after the injection of gas toward the substrate stack placed on the stand has been completed in the substrate processing apparatus according to the third modified example, in a cross-section perpendicular or substantially perpendicular to the width direction. [Figure 9] Figure 9 is a schematic diagram showing an example of a state different from Figure 8 in the substrate processing apparatus according to the third modified example, after the injection of gas toward the substrate stack placed on the stand has been completed, in a cross-section perpendicular or substantially perpendicular to the width direction. [Figure 10] Figure 10 is a schematic diagram showing an example of a state different from Figures 8 and 9 in the substrate processing apparatus according to the third modified example, after the injection of gas toward the substrate stack placed on the stand has been completed, in a cross-section perpendicular or substantially perpendicular to the width direction. [Modes for carrying out the invention]

[0008] The embodiments will be described below with reference to the drawings.

[0009] The substrate processing apparatus of this embodiment is used in the manufacturing process of producing ceramic substrates as substrates. An example of a ceramic substrate produced in this embodiment is a silicon nitride substrate. In the manufacturing process of ceramic substrates, the substrates are sintered in a sintering step. In the sintering step, a substrate laminate is formed by stacking multiple substrates, and the substrates are sintered by heating the substrate laminate. In the sintering step, a release agent powder is scattered on each of the multiple substrates, and the substrate laminate is heated. In the sintering step, the scattered powder suppresses adhesion between the substrates in the substrate laminate. An example of a release agent powder is boron nitride powder.

[0010] In the manufacturing process of ceramic substrates, after sintering the substrates as described above, multiple substrates are separated from each other in the substrate stack. Furthermore, any adhering powder is removed from the substrates by methods such as gas injection. The substrate processing apparatus of this embodiment performs substrate separation in the substrate stack and powder removal from the substrates after the sintering process. The substrate processing apparatus and the substrate processing method using the substrate processing apparatus will be described below.

[0011] (First embodiment) First, as an example of an embodiment, a first embodiment will be described. Figure 1 is a schematic perspective view showing the configuration of the substrate processing apparatus 1 according to the first embodiment. As shown in Figure 1, the substrate processing apparatus 1 includes a housing 2. In the substrate processing apparatus 1, the housing 2 forms the exterior, and a processing space 3 is formed inside the housing 2. In the substrate processing apparatus 1, a stand 5 is installed in the processing space 3. Then, in the substrate processing apparatus 1, a substrate laminate 10 made by stacking multiple substrates is placed on the stand 5, and processing is performed on the substrate laminate 10 placed on the stand 5 as the processing target. Each of the multiple substrates constituting the substrate laminate 10 is sintered, for example, by a sintering process. Also, with a release agent powder attached to each of the multiple substrates, the substrate laminate 10 is placed on the stand 5.

[0012] In the substrate processing apparatus 1, the depth direction (directions indicated by arrows X1 and X2), the width direction (directions indicated by arrows Y1 and Y2) that intersects (orthogonal or nearly orthogonal to) the depth direction, and the height direction (directions indicated by arrows Z1 and Z2) that intersects (orthogonal or nearly orthogonal to) both the depth and width directions are defined for the base 5 and its vicinity. In the base 5 and its vicinity, one side in the height direction corresponds to the upper side (arrow Z1 side), and the opposite side in the height direction corresponds to the lower side (arrow Z2 side). Also, in the base 5 and its vicinity, one side in the depth direction corresponds to the front side (arrow X1 side), and the opposite side in the depth direction corresponds to the rear side (arrow X2 side). Furthermore, in the base 5 and its vicinity, the distance along the height direction from a reference position is defined as the height.

[0013] In the substrate processing apparatus 1, for example, processing is performed on the substrate stack 10 in a state where the depth and width directions are aligned with the horizontal plane, and the height direction is aligned with the vertical direction. When processing is being performed on the substrate stack 10, the upper side in the height direction coincides with or approximately coincides with the upper vertical side, and the lower side in the height direction coincides with or approximately coincides with the lower vertical side.

[0014] Figure 2 is a schematic diagram showing an example of a state in which processing is being performed on a substrate stack 10 placed on a stand 5 in the substrate processing apparatus 1 according to the first embodiment, in a cross section perpendicular or substantially perpendicular to the width direction. Figure 3 is a schematic diagram of the state shown in the example in Figure 2, viewed from one side in the depth direction. As shown in Figures 2 and 3, the stand 5 is provided with an inclined surface 6. The inclined surface 6 is inclined with respect to the height direction and the depth direction. The inclined surface 6 faces upward in the height direction. Also, the height of the inclined surface 6 changes along the depth direction. In the example in Figure 2, the inclined surface 6 is inclined with respect to the height direction with a slope that is located higher as you move from the front to the rear. In one example, the inclined surface 6 is inclined with respect to the height direction with a slope that is located higher as you move from the rear to the front.

[0015] Furthermore, in each of the multiple substrates 11 stacked in the substrate laminate 10, the thickness direction, the width direction intersecting (orthogonal or nearly orthogonal to) the thickness direction, and the length direction intersecting (orthogonal or nearly orthogonal to) both the thickness direction and the width direction are defined. In each of the substrates 11, the dimensions along the thickness direction are smaller than the dimensions along the width direction and the dimensions along the length direction. In the substrate laminate 10, each of the multiple substrates 11 is stacked on top of the other substrates 11 with its thickness direction aligned with the stacking direction.

[0016] Further, in the substrate laminate 10, a width direction intersecting (orthogonal or substantially orthogonal to) the lamination direction, and a length direction intersecting (orthogonal or substantially orthogonal to) both the lamination direction and the width direction are defined. In the substrate laminate 10, the plate width direction of each of the plurality of substrates 11 is along the width direction of the substrate laminate 10, and the plate length direction of each of the plurality of substrates 11 is along the length direction of the substrate laminate 10. In the substrate laminate 10, the lamination direction is also referred to as the "thickness direction".

[0017] The substrate laminate 10 includes a pair of edge portions 12 and 13 serving as side edge portions. In the substrate laminate 10, the edge portion 12 forms an end on one side in the width direction, and the edge portion 13 forms an end on the opposite side to the edge portion 12 in the width direction. In the substrate laminate 10, the edge portion 12 is formed by the edge on one side in the plate width direction of each of the plurality of substrates 11. Then, in the substrate laminate 10, the edge portion 13 is formed by the edge on the opposite side to the edge forming the edge portion 12 of each of the plurality of substrates 11.

[0018] The substrate laminate 10 includes a pair of edge portions 15 and 16 serving as an upper edge portion and a lower edge portion. In the substrate laminate 10, the edge portion 15 forms an end on one side in the length direction, and the edge portion 16 forms an end on the opposite side to the edge portion 15 in the length direction. In the substrate laminate 10, the edge portion 15 is formed by the edge on one side in the plate length direction of each of the plurality of substrates 11. Then, in the substrate laminate 10, the edge portion 16 is formed by the edge on the opposite side to the edge forming the edge portion 15 of each of the plurality of substrates 11.

[0019] In the substrate processing apparatus 1, the substrate laminate 10 to be processed can be placed on the inclined surface 6 of the placing table 5. The substrate laminate 10 is placed on the inclined surface 6 in a state of abutting against the inclined surface 6 from the upper side in the height direction of the placing table 5. In processing using the substrate processing apparatus 1, the substrate laminate 10 is placed on the inclined surface 6 in a state where the lamination direction is along the depth direction of the placing table 5. Then, the substrate laminate 10 is placed on the inclined surface 6 in a state where the length direction of the substrate laminate 10 is along the height direction of the placing table 5 and the width direction of the substrate laminate 10 is along the width direction of the placing table 5.

[0020] Furthermore, as described above, when the substrate stack 10 is placed on the inclined surface 6, the edge 12 of the substrate stack 10 faces one side in the width direction of the base 5, and the edge 13 faces the opposite side of the width direction of the base 5 from which the edge 12 faces. In the substrate stack 10, the edge 15 faces one side in the height direction of the base 5, and the edge 16 faces the opposite side of the height direction of the base 5 from which the edge 15 faces. In the example shown in Figures 1 to 3, the substrate stack 10 is placed on the inclined surface 6 with the edge 15 facing the upper side in the height direction of the base 5, and the edge 16 facing the lower side in the height direction of the base 5. In the substrate stack 10, the edge 16 abuts against the inclined surface 6 of the base 5 from above (vertically above).

[0021] The substrate processing apparatus 1 includes a pair of holding plates 17 and 18. Holding plate 17 is adjacent to the substrate stack 10 placed on the inclined surface 6 from one side in the depth direction of the base 5. Holding plate 18 is adjacent to the substrate stack 10 placed on the inclined surface 6 from the opposite side from holding plate 17. Therefore, on the inclined surface 6, the substrate stack 10 is positioned between the pair of holding plates 17 and 18 in the depth direction of the base 5. The pair of holding plates 17 and 18 restrict the movement of the substrate stack 10 in the depth direction of the base 5. In addition, the pair of holding plates 17 and 18 hold each of the multiple substrates 11 that make up the substrate stack 10 in a position where the length direction is along the height direction of the base 5 and the thickness direction is along the depth direction of the base 5.

[0022] The substrate processing apparatus 1 is equipped with one or more nozzles. In the example shown in Figures 1 to 3, three nozzles 21, 22, and 23 are provided on the substrate processing apparatus 1. Each of the nozzles 21 to 23 is capable of spraying a gas, such as air, toward the substrate stack 10 placed on the inclined surface 6 of the base 5. Nozzle 21 faces the substrate stack 10 placed on the inclined surface 6 from one side in the width direction of the base 5. In the example shown in Figures 1 to 3, nozzle 21 faces the edge 12 of the substrate stack 10. Nozzle 21 sprays gas toward the substrate stack 10 placed on the inclined surface 6 from one side in the width direction of the base 5.

[0023] Nozzle 22 faces the substrate stack 10, which is positioned on the inclined surface 6, from the opposite side of the nozzle 21 in the width direction of the base 5. In the example shown in Figures 1 to 3, nozzle 22 faces the edge 13 of the substrate stack 10. Nozzle 22 injects gas toward the substrate stack 10 positioned on the inclined surface 6 from the opposite side of the nozzle 21 in the width direction of the base 5. As described above, since nozzles 21 and 22 are positioned, in the example shown in Figures 1 to 3, each of nozzles 21 and 22 injects gas toward the substrate stack 10 from the outside in the width direction of the base 5 and functions as a lateral nozzle.

[0024] The nozzle 23 faces the substrate stack 10, which is positioned on the inclined surface 6, from above the base 5 in the height direction. In the example shown in Figures 1 to 3, the nozzle 23 faces the edge 15 of the substrate stack 10. The nozzle 23 injects gas from above the base 5 in the height direction toward the substrate stack 10 positioned on the inclined surface 6. Therefore, in the example shown in Figures 1 to 3, the nozzle 23 functions as an upward nozzle.

[0025] The distances between each of the nozzles 21-23 and the substrate stack 10, which is positioned on the inclined surface 6, are adjusted to an appropriate distance. The distances to the substrate stack 10 may be the same or approximately the same for all nozzles 21-23 relative to each other. Alternatively, the distance to the substrate stack 10 for one or more of the nozzles 21-23 may differ from that of the other nozzles. In the example shown in Figures 1 to 3, the distance from nozzle 23 to the substrate stack 10 is different from the distance from nozzle 21 to the substrate stack 10, and the distance from nozzle 21 to the substrate stack 10.

[0026] As shown in Figure 2, the substrate processing apparatus 1 includes a control unit 25. The control unit 25 controls the gas injection operation from each of the nozzles 21 to 23. The timing of gas injection is adjusted by the control unit 25 controlling the injection operation of each of the nozzles 21 to 23. The control unit 25 also adjusts the gas injection pressure from each of the nozzles 21 to 23 by controlling the flow rate and pressure of the gas supplied to the nozzles 21 to 23. The gas injection pressure may be the same or approximately the same for all nozzles 21 to 23. Alternatively, the gas injection pressure of one or more of the nozzles 21 to 23 may differ from that of the other nozzles. In one example, nozzle 23 injects gas at a different injection pressure than nozzles 21 and 22.

[0027] The control unit 25 includes a processor or integrated circuit (control circuit) including a CPU (central processing unit), an ASIC (application-specific integrated circuit), or an FPGA (field-programmable gate array), and a storage medium such as memory. The control unit 25 may have only one processor or may have multiple processors. The control unit 25 performs control by executing programs stored in the storage medium. The control by the control unit 25 may be performed by the processor of one computer, or by the collaborative efforts of processors of multiple computers. Furthermore, at least a portion of the control by the control unit 25 may be performed by a server in a cloud environment.

[0028] As shown in Figure 1, the substrate processing apparatus 1 includes moving stages 31 and 32. When moving stage 31 moves, the nozzle 21 moves along the depth direction of the base 5 (arrow A1). Then, when moving stage 32 operates, the nozzle 21 moves along the height direction of the base 5 (arrow B1). As a result, the moving stages 31 and 32 enable the nozzle 21 to move along the edge 12 of the substrate stack 10.

[0029] The substrate processing apparatus 1 also includes moving stages 33 and 34. When moving stage 33 moves, the nozzle 22 moves along the depth direction of the base 5 (arrow A2). Then, when moving stage 34 moves, the nozzle 22 moves along the height direction of the base 5 (arrow B2). As a result, the moving stages 33 and 34 enable the nozzle 21 to move along the edge 13 of the substrate stack 10.

[0030] The substrate processing apparatus 1 also includes moving stages 35 and 36. When moving stage 35 operates, the nozzle 23 moves along the depth direction of the base 5 (arrow A3). Then, when moving stage 36 operates, the nozzle 23 moves along the width direction of the base 5 (arrow B3). As a result, the moving stages 35 and 36 enable the nozzle 23 to move along the edge 15 of the substrate stack 10.

[0031] In the example shown in Figure 1, each of the mobile stages 31, 33, and 35 is moved by force applied by an operator. Therefore, the positions of the nozzles 21 to 23 in the depth direction of the base 5 are manually adjusted by the operator. Also in the example shown in Figure 1, each of the mobile stages 32, 34, and 36 is moved by the drive of a motor or other drive component. The control unit 25 controls the movement of the mobile stages 32, 34, and 36 by controlling the drive of the drive component. As a result, the control unit 25 adjusts the positions of the nozzles 21 and 22 in the height direction of the base 5, and the position of the nozzle 23 in the width direction of the base 5.

[0032] In one example, each of the mobile stages 31, 33, and 35 is moved by a drive component such as a motor. In this case, the control unit 25 controls the movement of each of the mobile stages 31, 33, and 35 by controlling the drive of the drive component. The control unit 25 then adjusts the positions of the nozzles 21 to 23 in the depth direction of the base 5. In another example, each of the mobile stages 32, 34, and 36 is moved by force applied by an operator. In this case, the positions of the nozzles 21 and 22 in the height direction of the base 5, and the position of the nozzle 23 in the width direction of the base 5, are manually adjusted by the operator.

[0033] When processing the substrate stack 10, which is the target of processing, the substrate stack 10 is placed on the inclined surface 6 of the stand 5 with the stacking direction aligned with the depth direction of the stand 5, as described above. Then, gas is injected from nozzles 21 to 23 toward the substrate stack 10 placed on the inclined surface 6. At this time, the substrate stack 10 is injected from both sides in the width direction of the stand 5 by nozzles 21 and 22, and from the upper side in the height direction by nozzle 23.

[0034] When gas is being ejected from nozzle 21, the nozzle 21 moves along the edge 12 of the substrate stack 10 as the moving stages 31 and 32 move. When gas is being ejected from nozzle 22, the nozzle 22 moves along the edge 14 of the substrate stack 10 as the moving stages 33 and 34 move. And when gas is being ejected from nozzle 23, the nozzle 21 moves along the edge 15 of the substrate stack 10 as the moving stages 35 and 36 move.

[0035] In this embodiment, the height of the inclined surface 6 on the base 5 changes along the depth direction. Therefore, by arranging the substrate stack 10 on the inclined surface 6 with the stacking direction aligned with the depth direction of the base 5, a shear force acts between adjacent substrates 11 in the substrate stack 10 (arrow F1). In the substrate stack 10, the shear force makes it easier for adjacent substrates 11 to separate from each other. As a result, multiple substrates 11 can be separated from each other in the substrate stack 10.

[0036] Furthermore, in the substrate stack 10 arranged on the inclined surface 6, gas is injected from nozzles 21 to 23 while shear force is acting between adjacent substrates 11 due to the inclined surface 6. As a result, in the substrate stack 10, the gas injected from nozzles 21 to 23 flows into the gaps between adjacent substrates 11, making it easier for adjacent substrates 11 to separate from each other. This makes it easier for multiple substrates 11 to separate from each other in the substrate stack 10.

[0037] Furthermore, in the substrate stack 10 placed on the inclined surface 6, the powder sprayed as a release agent is removed from each of the substrates 11 by the gas sprayed from nozzles 21 to 23. In other words, the powder adhering to each of the multiple substrates 11 can be properly removed by the gas sprayed from nozzles 21 to 23.

[0038] As described above, in this embodiment, the separation of the substrates 11 in the substrate laminate 10 and the removal of powder from the substrates 11 can be automated by using the substrate processing apparatus 1. By automating the separation of the substrates 11 in the substrate laminate 10 and the removal of powder from the substrates 11, variations in the powder adhesion state of each substrate 11 after processing by the substrate processing apparatus 1 are reduced. This makes it possible to reduce variations in the quality of products using the substrates 11. Furthermore, by automating the separation of the substrates 11 in the substrate laminate 10 and the removal of powder from the substrates 11, the impact of the powder removed from the substrates 11 on the workers can be reduced.

[0039] Furthermore, in this embodiment, gas is injected from the nozzles 21-23 from the upper side in the height direction and from both sides in the width direction toward the substrate stack 10 arranged on the inclined surface 6. As a result, the gas injected from the nozzles 21-23 flows more easily into the gaps between adjacent substrates 11 in the substrate stack 10, making it easier for the multiple substrates 11 to separate from each other. In addition, powder adhering to each of the multiple substrates 11 is further removed by the gas injected from the nozzles 21-23.

[0040] Furthermore, in this embodiment, when gas is being injected toward the substrate stack 10, the nozzles 21, 22, and 23 move along the edges 12, 13, and 15, respectively. This effectively suppresses localized gas injection from the nozzles 21-23 on the substrate stack 10 arranged on the inclined surface 6. Consequently, the gas injected from the nozzles 21-23 flows more easily into the gaps between adjacent substrates 11 in the substrate stack 10, further separating the multiple substrates 11 from each other. As a result, powder adhering to each of the multiple substrates 11 is further removed by the gas injected from the nozzles 21-23.

[0041] Furthermore, in this embodiment, a stand 5 is installed in the processing space 3 inside the housing 2. Therefore, the removal of powder from the multiple substrates 11 of the substrate stack 10 is performed inside the housing 2. Consequently, the impact of the powder removed from the substrates 11 on the worker is further reduced.

[0042] (modified version) In the embodiments described above, three nozzles 21 to 23 are provided, but the invention is not limited to this. In one modified example, nozzles 21, 22, and nozzle 23 are provided as nozzles capable of injecting gas toward the substrate stack 10. In this case, gas can be injected toward the substrate stack 10 placed on the inclined surface 6 from the upper side in the height direction and from one side in the width direction of the base 5. In another modified example, only one of the three nozzles 21 to 23 described above may be provided. In yet another modified example, a single nozzle can inject gas toward the substrate stack 10 placed on the inclined surface 6 from the upper side in the height direction and from the outside in the width direction of the base 5. In this case, the nozzle is movable to a position where gas is injected toward the substrate stack 10 from the upper side in the height direction, and to a position where gas is injected toward the substrate stack 10 from the outside in the width direction of the base 5.

[0043] However, in all of these modifications, the nozzle is capable of spraying gas toward the substrate stack 10 placed on the inclined surface 6 of the base 5. In addition, in preferred examples such as the embodiment, one or more nozzles are capable of spraying gas toward the substrate stack 10 placed on the inclined surface 6 from the upper side in the height direction and from at least one side in the width direction of the base 5.

[0044] Figure 4 is a schematic diagram showing an example of the substrate stack 10 being placed on the base 5 in the substrate processing apparatus 1 according to the first modified example, in a cross-section perpendicular or approximately perpendicular to the width direction. Figure 5 is a schematic diagram showing an example of a different state from Figure 4 in which the substrate stack 10 is placed on the base 5 in the substrate processing apparatus 1 according to the first modified example, in a cross-section perpendicular or approximately perpendicular to the width direction. In this modified example, after the substrate stack 10 is placed on the inclined surface of the base 5, the state changes, for example, in the order of the state in Figure 4 and the state in Figure 5.

[0045] As shown in Figures 4 and 5, in this modified example, the substrate processing apparatus 1 includes a jig 41. In the processing space 3, the jig 41 is positioned above the base 5 in the height direction (vertically above). Also, when the substrate stack 10 is placed on the inclined surface 6, the jig 41 is positioned above the substrate stack 10 in the height direction. The jig 41 includes a jig inclined surface 42. The jig inclined surface 42 is inclined with respect to the height direction and depth direction, similar to the inclined surface 6 of the base 5. The height of the jig inclined surface 42 changes along the depth direction. The jig inclined surface 42 faces downward in the height direction.

[0046] The jig's inclined surface 42 is inclined with respect to the height direction toward the side to which the inclined surface 6 of the base 5 is inclined. In the example shown in Figures 4 and 5, the inclined surface 6 is inclined with respect to the height direction, with the inclination increasing from the front to the rear. Similarly, the jig's inclined surface 42 is also inclined with respect to the height direction, with the inclination increasing from the front to the rear. In one example, both the inclined surface 6 and the jig's inclined surface 42 are inclined with respect to the height direction, with the inclination increasing from the rear to the front.

[0047] The inclination angles with respect to height may be the same or approximately the same for both the inclined surface 6 and the jig inclined surface 42, or they may be different for each other. However, in all cases, the jig inclined surface 42 is inclined with respect to height towards the side on which the inclined surface 6 of the base 5 is inclined. Furthermore, the inclination of the jig inclined surface 42 is never opposite to the inclination of the inclined surface 6 of the base 5.

[0048] In this modified example, the substrate processing apparatus 1 comprises a moving stage 43, a guide section 45, and a drive cylinder 46. The drive cylinder 46 is, for example, an air cylinder. In the substrate processing apparatus 1, the moving stage 43 moves along the height direction when the drive cylinder 46 is driven, that is, when the drive cylinder 46 extends and retracts. The movement of the moving stage 43 along the height direction is guided by the guide section 45. In this modified example, the jig 41 moves in the height direction as the moving stage 43 moves.

[0049] The jig 41 moves downward in the height direction, bringing it into contact with the substrate stack 10 placed on the inclined surface 6 of the base 5. The jig 41 comes into contact with the substrate stack 10 placed on the inclined surface 6 from above in the height direction. Also, the jig's inclined surface 42 comes into contact with the substrate stack 10. In the state shown in Figure 4, the jig's inclined surface 42 of the jig 41 comes into contact with the edge 15 of the substrate stack 10 from above in the height direction. When the jig's inclined surface 42 of the jig 41 is in contact with the substrate stack 10, the jig's inclined surface 42 faces the inclined surface 6 of the base 5 with the substrate stack 10 in between.

[0050] Furthermore, when the jig inclined surface 42 is in contact with the substrate stack 10, the jig 41 moves upward in the height direction, causing the jig 41 to move away from the substrate stack 10. As a result, the jig 41 no longer comes into contact with the substrate stack 10 positioned on the inclined surface 6. In this modified example, the control unit 25 controls the movement of the moving stage 43 by controlling the drive of the drive cylinder 46. This allows the control unit 25 to adjust the position of the jig 41 in the height direction.

[0051] Furthermore, in this modified version, the substrate processing apparatus 1 includes a drive cylinder 51, which is a vibration source, and an elastic member 52 such as a spring. The drive cylinder 51 is, for example, an air cylinder. In the substrate processing apparatus 1, vibrations are generated with the height direction as the direction of vibration when the drive cylinder 51, which is a vibration source, is driven, that is, when the drive cylinder 51 extends and retracts. The vibrations generated in the drive cylinder 51 are then transmitted to the base 5. As a result, the base 5 vibrates with the height direction as the direction of vibration.

[0052] In this modified example, the control unit 25 controls the drive of the drive cylinder 51, thereby controlling vibrations caused by the drive cylinder 51. Also in this modified example, the base 5 is connected to the housing 2 via an elastic member 52. When the base 5 is vibrating due to the drive cylinder 51, the elastic member 52 expands and contracts in response to the vibration of the base 5.

[0053] In this modified example, as in the embodiments described above, processing is performed on the substrate stack 10, which is the target of processing, by injecting gas toward the substrate stack 10 placed on the inclined surface 6 of the stand 5. However, in this modified example, before injecting gas toward the substrate stack 10, as shown in Figure 4, the jig inclined surface 42 of the jig 41 is brought into contact with the substrate stack 10 placed on the inclined surface 6 from above in the height direction. As a result, the jig inclined surface 42 presses the substrate stack toward the lower side in the height direction (arrow P1). Then, due to the pressure from the jig inclined surface 42, a shear force acts between adjacent substrates 11 in the substrate stack 10 (arrow F2). Note that when the jig inclined surface 42 is in contact with the substrate stack 10, the drive of the drive cylinder 51 is stopped, and the stand 5 does not vibrate, or vibrates very little.

[0054] Furthermore, in this modified example, the jig 41 moves upward in the height direction from the state shown in Figure 4, thereby separating the jig 41 from the substrate stack 10, as shown in Figure 5. With the jig 41 separated from the substrate stack 10, the drive cylinder 51 is driven to vibrate the base 5 with the height direction as the vibration direction (arrow V1). As the base 5 vibrates, a shear force acts between adjacent substrates 11 in the substrate stack 10 placed on the inclined surface 6 of the base 5 (arrow F3). In one example of this modified example, while the base 5 is vibrating, gas is discharged from the nozzle toward the substrate stack 10. In another example, after stopping the vibration of the base 5 by the drive cylinder 51, gas is discharged from the nozzle toward the substrate stack 10.

[0055] In this modified example, the substrate stack 10 is placed on the inclined surface 6 of the base 5 with the stacking direction aligned with the depth direction, and gas is discharged from the nozzle toward the substrate stack 10 placed on the inclined surface 6. Therefore, this modified example also produces the same functions and effects as the embodiments described above. Accordingly, in this modified example as well, the separation of the substrate 11 in the substrate stack 10 and the removal of powder from the substrate 11 can be automated by using the substrate processing apparatus 1.

[0056] Furthermore, in this modified example, a jig inclined surface 42 is provided on the jig 41, which is inclined in the height direction toward the side to which the inclined surface 6 of the base 5 is inclined. By bringing the jig inclined surface 42 into contact with the substrate stack 10 placed on the inclined surface 6 from above in the height direction, a shear force is applied between adjacent substrates 11 in the substrate stack 10. As a result, adjacent substrates 11 in the substrate stack 10 become more easily separated from each other. Therefore, multiple substrates 11 in the substrate stack 10 become more easily separated from each other.

[0057] Furthermore, in this modified example, the base 5 vibrates in the height direction due to the drive cylinder 51, which is the vibration source. As the base 5 vibrates, shear forces act between adjacent substrates 11 in the substrate stack 10 placed on the inclined surface 6 of the base 5. This makes it easier for adjacent substrates 11 in the substrate stack 10 to separate from each other. Therefore, multiple substrates 11 in the substrate stack 10 become easier to separate from each other.

[0058] In one modified example, only one of the following may be provided: the jig 41 equipped with the jig inclined surface 42, or the drive cylinder 51 which serves as a vibration source. In the configuration in which the jig 41 is provided, similar to the first modified example, the jig inclined surface 42 is brought into contact with the substrate stack 10 from above in the height direction, thereby acting a shear force between adjacent substrates 11 in the substrate stack 10. In the configuration in which a vibration source such as the drive cylinder 51 is provided, similar to the first modified example, the base 5 vibrates with the height direction as the vibration direction, thereby acting a shear force between adjacent substrates 11 in the substrate stack 10.

[0059] Figure 6 is a schematic diagram showing an example of a state in which processing is being performed on a substrate stack 10 placed on a stand 5 in the substrate processing apparatus 1 according to the second modified example, in a cross section perpendicular or substantially perpendicular to the width direction. As shown in Figure 6, in this modified example, the substrate processing apparatus 1 is equipped with a suction source 55. The suction source 55 is equipped with a suction drive unit such as a suction pump, and a recovery tank for collecting the object to be sucked. In this modified example, the suction passage 56 extends through the inside of the stand 5. In the example in Figure 6, the suction passage 56 extends through the stand 5 and the holding plate 18.

[0060] The suction passage 56 opens on the inclined surface 6 of the base 5. Thus, an opening is formed on the inclined surface 6 of the base 5 that serves as a suction port to the suction passage 56. The suction passage 56 communicates with the suction source 55 via the internal passage of the suction tube 57. In the example shown in Figure 6, the end of the suction tube 57 opposite to the suction source 55 is connected to the retaining plate 18. At the point where the suction tube 57 is connected to the retaining plate 18, the suction passage 56 communicates with the internal passage of the suction tube 57.

[0061] In this modified example, when the suction drive unit is activated and the suction source 55 is operated, gas such as air flows into the suction passage 56 through the suction port formed on the inclined surface 6. Then, the gas flows from the suction port on the inclined surface 6 towards the suction source 55, sequentially through the suction passage 56 and the internal passage of the suction tube 57. Therefore, when the substrate stack 10 is placed on the inclined surface 6 of the stand 5, when the suction source 55 is operated, a suction force acts from the area where the substrate stack 10 is placed toward the suction port on the inclined surface 6. In other words, a suction force acts toward the downward direction in the height direction from the substrate stack 10 placed on the inclined surface 6.

[0062] As described above, the suction force acting on the inclined surface 6 toward the suction port causes the powder N attached to each of the multiple substrates 11 in the substrate stack 10 to be sucked through the suction port into the suction passage 56 (arrow Q1). The powder N sucked into the suction passage 56 then flows through the internal passage of the suction tube 57 toward the suction source 55. The sucked powder N is then collected at the suction source 55.

[0063] In this modified example, the control unit 25 controls the gas injection operation from the nozzle and also controls the operation (suction operation) of the suction source 55. By controlling the operation of the suction source 55, the control unit 25 adjusts the timing of suction by the suction source 55. Figure 7 is a flowchart schematically showing an example of the control of gas injection and suction by the suction source 55 performed by the control unit 25 in the substrate processing apparatus 1 according to the second modified example. The control in the example shown in Figure 7 is performed with the substrate stack 10 placed on the inclined surface 6 of the base 5.

[0064] When the process of the example shown in Figure 7 is started, the control unit 25 starts injecting gas onto the substrate stack 10 from the outside in the width direction, for example, by injecting gas from one or more of the nozzles 21 and 22 (S101). At this time, gas is injected from at least one side in the width direction of the base 5 toward the substrate stack 10 placed on the inclined surface 6. After continuing to inject gas onto the substrate stack 10 from the outside in the width direction for a certain period of time, the control unit 25 terminates the injection of gas onto the substrate stack 10 from the outside in the width direction (S102).

[0065] Then, the control unit 25 starts suction using the suction source 55 (S103). The control unit 25 also starts injecting gas onto the substrate stack 10 from above in the height direction by ejecting gas from the nozzle 23, etc. (S103). At this time, on the substrate stack 10 placed on the inclined surface 6, gas is injected from above in the height direction, and a suction force acts toward the downward direction in the height direction. After continuing the injection of gas onto the substrate stack 10 from above in the height direction and the suction by the suction source 55 for a certain period of time, the control unit 25 ends the injection of gas onto the substrate stack 10 from above in the height direction and the suction by the suction source 55 (S104).

[0066] By performing the control shown in the example in Figure 7, the control unit 25 first injects gas from at least one of the nozzles (21, 22) toward the substrate stack 10 from at least one side in the width direction of the base 5, and then injects gas from nozzle 23 toward the substrate stack 10 from the upper side in the height direction. In parallel with the gas injection from the upper side in the height direction, the control unit 25 applies a suction force from the suction source 55 toward the lower side in the height direction of the substrate stack 10.

[0067] In the example control shown in Figure 7, suction by the suction source 55 is initiated after the injection of gas into the substrate stack 10 from the outside in the width direction has ended. However, in one example, suction by the suction source 55 may be performed in parallel with the injection of gas from the outside in the width direction. In this case, even after the injection of gas into the substrate stack 10 from the outside in the width direction has ended, suction by the suction source 55 continues. Then, similar to the example in Figure 7, after the injection of gas into the substrate stack 10 from the outside in the width direction has ended, suction by the suction source 55 is performed in parallel with the injection of gas into the substrate stack 10 from the top in the height direction.

[0068] In this modified example, the substrate stack 10 is placed on the inclined surface 6 of the base 5 with the stacking direction aligned with the depth direction, and gas is discharged from the nozzle toward the substrate stack 10 placed on the inclined surface 6. Therefore, this modified example also produces the same functions and effects as the embodiments described above. Accordingly, in this modified example as well, the separation of the substrate 11 in the substrate stack 10 and the removal of powder from the substrate 11 can be automated by using the substrate processing apparatus 1. Other examples of ceramic substrates include silicon nitride substrates, aluminum nitride substrates, aluminum oxide substrates, and zirconium oxide substrates. Because ceramic substrates have high strength, they will not be damaged by gas injection from the nozzle.

[0069] Furthermore, in this modified configuration, the operation of the suction source 55 creates a suction force acting downwards in the height direction from the substrate stack 10 placed on the inclined surface 6. The suction performed by the suction source 55 makes it easier to remove the powder adhering to each of the multiple substrates 11. In addition, the suction performed by the suction source 55 makes it possible to recover the powder removed from each of the multiple substrates 11.

[0070] In this modified configuration, gas is first injected from at least one side of the base 5 in the width direction toward the substrate stack 10, and then gas is injected from above in the height direction toward the substrate stack 10. In parallel with the injection of gas from above in the height direction, a suction force is applied by the suction source 55 toward the lower side of the substrate stack 10 in the height direction. By controlling the injection and suction of gas in this way, the powder adhering to each of the multiple substrates 11 becomes easier to remove. In addition, the suction by the suction source 55 makes it easier to recover the powder removed from the multiple substrates 11.

[0071] Figure 8 is a schematic diagram showing an example of the state after the injection of gas toward the substrate stack 10 placed on the stand 5 has ended in the substrate processing apparatus 1 according to the third modified example, in a cross-section perpendicular or approximately perpendicular to the width direction. Figure 9 is a schematic diagram showing an example of a state different from Figure 8 after the injection of gas toward the substrate stack 10 placed on the stand 5 has ended in the substrate processing apparatus 1 according to the third modified example, in a cross-section perpendicular or approximately perpendicular to the width direction. Figure 10 is a schematic diagram showing an example of a state different from Figures 8 and 9 after the injection of gas toward the substrate stack 10 placed on the stand 5 has ended in the substrate processing apparatus 1 according to the third modified example, in a cross-section perpendicular or approximately perpendicular to the width direction. In this modified example, after the injection of gas toward the substrate stack 10 has ended, the state changes in the order of, for example, the state in Figure 8, the state in Figure 9, and the state in Figure 10.

[0072] As shown in Figures 8 to 10, in this modified example, the substrate processing apparatus 1 is equipped with a rotary actuator 61. When the rotary actuator 61 operates, it rotates about an axis that is aligned with the width direction of the base 5. As the rotary actuator 61 rotates, the holding plate 17 rotates together with the rotary actuator 61. When the substrate stack 10 is placed on the inclined surface 6 of the base 5, the rotation of the holding plate 17 by the operation of the rotary actuator 61 causes the substrate stack 10 to rotate together with the holding plate 17.

[0073] As the substrate stack 10 rotates together with the holding plate 17, the substrate stack 10 no longer comes into contact with the inclined surface 6. Furthermore, as the substrate stack 10 rotates together with the holding plate 17, the orientation of the substrate stack 10 changes from a state where the stacking direction of the multiple substrates 11 aligns with the depth direction of the base 5 to a state where the stacking direction aligns with the height direction. Therefore, the rotary actuator 61 functions as an orientation-changing unit that changes the orientation of the substrate stack 10. In the example shown in Figures 8 to 10, when the stacking direction aligns with the height direction, the substrate stack 10 contacts the holding plate 17 from above in the height direction. In this modified example, the control unit 25 controls the operation of the orientation-changing unit, such as the rotary actuator 61.

[0074] In this modified example, the substrate processing apparatus 1 is equipped with a suction pad 62, which is movable. The suction pad 62 can pick up multiple substrates 11 one by one from a substrate stack 10 arranged with the stacking direction aligned with the height direction. When the suction pad 62 is picking up one substrate 11, when the suction pad 62 moves, the substrate 11 that the suction pad 62 is picking up moves together with the suction pad 62. In this modified example, the control unit 25 controls the picking operation of the substrate 11 by the suction pad 62 and the movement of the suction pad 62.

[0075] In this modified example, as in the embodiments described above, processing is performed on the substrate stack 10, which is the target of processing, by injecting gas toward the substrate stack 10 placed on the inclined surface 6 of the stand 5. However, in this modified example, after injecting gas toward the substrate stack 10, the rotary actuator 61 is operated as shown in Figures 8 and 9 to rotate the holding plate 17 and the substrate stack 10 together with the rotary actuator 61 (arrow R1). As a result, the orientation of the substrate stack 10 changes from a state where the stacking direction of the multiple substrates 11 is aligned with the depth direction of the stand 5 to a state where the stacking direction is aligned with the height direction.

[0076] Then, the suction pad 62 is brought close to the substrate stack 10, which is arranged with the stacking direction aligned with the height direction, and the suction pad 62 picks up one of the multiple substrates 11 (arrow J1). In the example shown in Figure 9, the suction pad 62 is brought close to the substrate stack 10 from the top in the height direction, and the suction pad 62 picks up the uppermost of the multiple substrates 11. Then, as shown in Figure 10, the suction pad 62 is moved while it is picking up one substrate 11 (arrow J2). As a result, the substrate 11 that the suction pad 62 is picking up is removed from the substrate processing device 1 (processing space 3).

[0077] In this modified example, the multiple substrates 11 constituting the substrate stack 10 are removed one by one from the substrate processing apparatus 1 by repeatedly using the suction pad 62 to pick up one of the multiple substrates 11, and moving the suction pad 62 while it is picking up one substrate 11. In this modified example, the suction pad 62 may also remove the picked-up substrate 11 from the substrate processing apparatus 1 and then proceed to the next step of transport.

[0078] In this modified example, the substrate stack 10 is placed on the inclined surface 6 of the base 5 with the stacking direction aligned with the depth direction, and gas is discharged from the nozzle toward the substrate stack 10 placed on the inclined surface 6. Therefore, this modified example also produces the same functions and effects as the embodiments described above. Accordingly, in this modified example as well, the separation of the substrate 11 in the substrate stack 10 and the removal of powder from the substrate 11 can be automated by using the substrate processing apparatus 1.

[0079] Furthermore, in this modified example, the rotation actuator 61, which is the posture changing unit, operates to change the posture of the substrate stack 10 from a state where the stacking direction is aligned with the depth direction to a state where the stacking direction is aligned with the height direction. Then, the suction pad 62 can pick up multiple substrates 11 one by one from the substrate stack 10 which is positioned with the stacking direction aligned with the height direction. For this reason, in this modified example, the removal of the substrates 11 that have been processed by the substrate processing device 1 from the substrate processing device 1 (processing space 3) can be automated. In addition, the suction pad 62 transports the picked-up substrates 11 to the next process, so the transport of the substrates 11 that have been processed by the substrate processing device 1 to the next process can be automated.

[0080] According to at least one embodiment or example, a stand is provided with an inclined surface whose height changes along the depth direction, and a substrate stack made of multiple substrates is placed on the inclined surface with the stacking direction aligned with the depth direction, thereby causing a shear force to act between adjacent substrates in the substrate stack. The nozzle is then capable of spraying gas toward the substrate stack placed on the inclined surface of the stand. This makes it possible to provide a substrate processing apparatus and a substrate processing method that can automate the separation of substrates in the substrate stack and the removal of powder from the substrates.

[0081] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0082] 1...Substrate processing device, 2...Housing, 5...Stand, 6...Inclined surface, 10...Substrate stack, 11...Substrate, 12,13,15,16...Edges, 21,22,23...Nozzles, 25...Control unit, 41...Jig, 42...Jig inclined surface, 51...Drive cylinder (vibration source), 55...Suction source, 61...Rotating actuator (attitude change unit), 62...Suction pad.

Claims

1. A base is provided which has an inclined surface whose height changes along the depth direction, and which can be used to place a substrate stack made of multiple stacked substrates on the inclined surface, and which applies a shear force between adjacent substrates in the substrate stack by placing the substrate stack on the inclined surface with the stacking direction aligned with the depth direction, A nozzle capable of spraying gas toward the substrate stack arranged on the inclined surface of the stand, A substrate processing apparatus equipped with the following:

2. The nozzle is capable of injecting the gas toward the substrate laminate arranged on the inclined surface from the upper side in the height direction and from at least one side in the width direction that intersects both the depth direction and the height direction. A substrate processing apparatus according to claim 1, comprising:

3. The substrate processing apparatus according to claim 1, wherein the nozzle is movable along the edge of the substrate stack arranged on the inclined surface.

4. A substrate processing apparatus according to any one of claims 1 to 3, further comprising a jig having a jig inclined surface that is inclined in the height direction toward the side to which the inclined surface of the base is inclined, and a jig that applies a shear force between adjacent substrates in the substrate stack by the jig inclined surface contacting the substrate stack placed on the inclined surface from above in the height direction.

5. A substrate processing apparatus according to any one of claims 1 to 3, further comprising a vibration source that vibrates the base with the height direction as the vibration direction.

6. A substrate processing apparatus according to any one of claims 1 to 3, further comprising a suction source that, when in operation, applies an attractive force toward the downward direction in the height direction from the substrate stack arranged on the inclined surface.

7. The substrate processing apparatus according to claim 6, further comprising a control unit that controls the operation of the nozzle and the suction source, and after injecting the gas into the nozzle toward the substrate stack from at least one side in the width direction intersecting both the depth direction and the height direction, injecting the gas into the nozzle toward the substrate stack from the upper side in the height direction, and in parallel with the injection of the gas from the upper side in the height direction, applies the suction force with the suction source.

8. A posture changing unit that, by operating, changes the posture of the substrate stack from a state in which the stacking direction is aligned with the depth direction to a state in which the stacking direction is aligned with the height direction, A suction pad capable of adsorbing each of the multiple substrates onto the substrate stack, which is arranged such that the stacking direction is aligned with the height direction, A substrate processing apparatus according to any one of claims 1 or 3, further comprising:

9. In a stand, a substrate stack consisting of multiple substrates is placed on an inclined surface where the height changes along the depth direction, By arranging the substrate stack on the inclined surface with the stacking direction aligned with the depth direction, a shear force is applied between adjacent substrates in the substrate stack. The gas is injected toward the substrate stack placed on the inclined surface of the stand, A substrate processing method comprising the following:

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