Electronic source

Abstract

To provide an electron source capable of improving performance. [Solution] According to the embodiment, the electron source includes first and second electrodes, first and second semiconductor layers, an emissive layer, an optical attenuation layer, and a conversion layer. The first semiconductor layer includes first and second partial regions. The second semiconductor layer is provided between the second electrode and the second partial region in a first direction. The direction from the first partial region to the second partial region intersects with the first direction. The direction from the first electrode to the first partial region is along the first direction. The emissive layer is provided between the second semiconductor layer and the second partial region. An opening is provided in the optical attenuation layer. The first partial region is located between the second electrode and at least a portion of the optical attenuation layer in a first direction. The emissive layer overlaps with the opening in a first direction. At least a portion of the first conversion region of the conversion layer overlaps with the opening in a first direction. The emissive layer is located between the second electrode and the first conversion region in a first direction.

Description

[Technical Field]

[0001] Embodiments of the present invention relate to an electron source. [Background technology]

[0002] For example, improvements in characteristics are desired in electron sources and the like. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Patent No. 3762535 [Overview of the Initiative] [Problems that the invention aims to solve]

[0004] The embodiment provides an electron source and a light-emitting device capable of improving characteristics. [Means for solving the problem]

[0005] According to the embodiment, the electron source includes a first electrode, a second electrode, a first semiconductor layer, a second semiconductor layer, an emitting layer, an optical attenuation layer, and a conversion layer. The first semiconductor layer includes a first partial region and a second partial region and has a first conductivity type. The second semiconductor layer is provided between the second electrode and the second partial region in a first direction and has a second conductivity type. The direction from the first partial region to the second partial region intersects the first direction. The direction from the first electrode to the first partial region is along the first direction. The emitting layer is provided between the second semiconductor layer and the second partial region. An opening is provided in the optical attenuation layer. The second partial region is located between the second electrode and at least a portion of the optical attenuation layer in the first direction. The emitting layer overlaps with the opening in the first direction. The conversion layer includes a first conversion region. At least a portion of the first conversion region overlaps with the opening in the first direction. The light-emitting layer is located between the second electrode and the first conversion region in the first direction. [Brief Description of the Drawings]

[0006] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating an electron source according to a first embodiment. [Figure 2] FIGS. 2(a) to 2(c) are schematic cross-sectional views illustrating the electron source according to the first embodiment. [Figure 3] FIG. 3 is a schematic cross-sectional view illustrating the electron source according to the first embodiment. [Figure 4] FIGS. 4(a) and 4(b) are schematic cross-sectional views illustrating the electron source according to the first embodiment. [Figure 5] is a schematic cross-sectional view illustrating an electron source according to a second embodiment. [Figure 6] is a schematic cross-sectional view illustrating an electron source according to a second embodiment. [Mode for Carrying Out the Invention]

[0007] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, and the like are not necessarily the same as those in reality. Even when representing the same part, the dimensions and ratios thereof may be different depending on the drawing. In the present specification and each drawing, the same reference numerals are given to the same elements as those described above with respect to the already shown drawings, and detailed description thereof will be omitted as appropriate.

[0008] (First Embodiment) FIG. 1 is a schematic cross-sectional view illustrating an electron source according to the first embodiment. FIGS. 2(a) to 2(c) are schematic cross-sectional views illustrating the electron source according to the first embodiment. FIG. 1 is a cross-sectional view taken along line A1-A2 of FIGS. 2(a) to 2(c). As shown in FIG. 1, the electron source 110 according to the embodiment includes a first electrode 51, a second electrode 52, a first semiconductor layer 11, a second semiconductor layer 12, a light-emitting layer 13, a light attenuation layer 20, and a conversion layer 30.

[0009] The first semiconductor layer (11) includes a first partial region (11a) and a second partial region (11b). The first semiconductor layer (11) is of a first conductivity type.

[0010] The second semiconductor layer (12) is provided between the second electrode (52) and the second partial region (11b) in the first direction D1. The second semiconductor layer (12) is of a second conductivity type. The second electrode (52) is electrically connected to the second semiconductor layer (12).

[0011] The first direction D1 is defined as the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. A direction perpendicular to both the Z-axis direction and the X-axis direction is defined as the Y-axis direction. For example, the first semiconductor layer (11) extends along the X-Y plane.

[0012] The first conductivity type is one of n-type and p-type. The second conductivity type is the other of n-type and p-type. In the following description, it is assumed that the first conductivity type is n-type and the second conductivity type is p-type.

[0013] A direction from the first partial region (11a) to the second partial region (11b) intersects the first direction D1. In the cross section of FIG. 1, the direction from the first partial region (11a) to the second partial region (11b) is along the second direction D2. The second direction D2 may correspond to the X-axis direction. A direction from the first electrode (51) to the first partial region (11a) is along the first direction D1. The first electrode (51) is electrically connected to the first partial region (11a).

[0014] The light emitting layer (13) is provided between the second semiconductor layer (12) and the second partial region (11b).

[0015] The light attenuation layer (20) is provided with an opening (25). The second partial region (11b) is located between the second electrode (52) and at least a part of the light attenuation layer (20) in the first direction D1. The light emitting layer (13) overlaps the opening (25) in the first direction D1.

[0016] The conversion layer 30 includes a first conversion region 31. At least a portion of the first conversion region 31 overlaps with the opening 25 in the first direction D1. In this example, the first conversion region 31 is located within the opening 25. The light-emitting layer 13 is located between the second electrode 52 and the first conversion region 31 in the first direction D1.

[0017] Figure 2(a) corresponds to a cross-sectional view in a plane including the first electrode 51 and the second electrode 52. Figure 2(b) corresponds to a cross-sectional view in a plane including the optical attenuation layer 20 and the first conversion region 31. Figure 2(c) corresponds to a cross-sectional view in a plane including the conversion layer 30.

[0018] For example, light 81 is emitted from the light-emitting layer 13 based on the current flowing between the first electrode 51 and the second electrode 52. The first electrode 51, the second electrode 52, the first semiconductor layer 11, the second semiconductor layer 12, and the light-emitting layer 13 are included in the light-emitting device 210. The light-emitting device 210 is, for example, an LED.

[0019] A portion of the light 81 emitted from the light-emitting layer 13 enters the first conversion region 31 in the aperture 25. The first conversion region 31 (conversion layer 30) is configured to emit electrons 82 in response to the light 81 emitted from the light-emitting layer 13.

[0020] Another portion of the light 81 emitted from the light-emitting layer 13 is incident on the light-attenuating layer 20 and absorbed or reflected. A portion of the reflected light 81 is reflected by electrodes or the like and incident on the first conversion region 31 in the aperture 25, where it is effectively utilized.

[0021] In this embodiment, an optical attenuation layer 20 with an aperture 25 is provided. This generates a narrow beam of light 81. The narrow beam of light 81 is incident on the first conversion region 31 of the conversion layer 30. This generates a narrow beam of electrons 82. The narrow beam of electrons can be used for various applications. The narrow beam of electrons can be applied to various electron beam application devices. These various electron beam application devices include, for example, devices in a wide range of fields such as semiconductor inspection equipment, electron microscopes, or electron beam irradiation devices. According to this embodiment, a narrow beam of electrons can be obtained with high intensity. According to this embodiment, an electron source with improved characteristics can be provided.

[0022] According to the embodiment, a narrow beam of light 81 can be obtained. A narrow beam of light can be used for various applications. According to the embodiment, a narrow beam of light can be obtained with high intensity. A light-emitting device with improved characteristics can be provided.

[0023] In some embodiments, the optical attenuation layer 20 may contain a metal. The metal may include, for example, at least one selected from the group consisting of Al, Ag, and Ti. High attenuation characteristics can be stably obtained. The thickness of the optical attenuation layer 20 may be, for example, 10 nm or more and 3000 nm or less.

[0024] In one embodiment, the peak wavelength of light 81 may be, for example, 220 nm or more and 450 nm or less. In one example, light 81 may include ultraviolet light. In one embodiment, light 81 may include deep ultraviolet light.

[0025] In one example, the conversion layer 30 includes a semiconductor. For example, the conversion layer 30 is In z1 Al z2 Ga 1-z1-z2 The conversion layer 30 may include (0≦z1≦1, 0≦z2≦1, z1+z2≦1). The conversion layer 30 may include at least one selected from the group consisting of diamond, BN, and AlN. These materials, for example, have negative electron affinity. Electrons 82 can be obtained with high efficiency. The conversion layer 30 may further include at least one selected from the group consisting of diamond, boron, and aluminum.

[0026] As shown in Figure 1, the conversion layer 30 may further include a second conversion region 32. At least a portion of the optical attenuation layer 20 is located between the first semiconductor layer 11 and the second conversion region 32. The first conversion region 31 may be continuous with the second conversion region 32.

[0027] As shown in Figure 1, a portion of the light-emitting layer 13 overlaps with the light-attenuating layer 20 in the first direction D1. The light 81 emitted from the light-emitting layer 13 is effectively attenuated in the light-attenuating layer 20, excluding the aperture 25. For example, stray light is suppressed.

[0028] As shown in Figure 1, the length of the opening 25 along one direction (second direction D2) intersecting the first direction D1 is defined as the first width w1. The second direction D2 may be, for example, the X-axis direction. The length of the light-emitting layer 13 along the second direction D2 is defined as the second width w2. In this embodiment, for example, the first width w1 is smaller than the second width w2. For example, light leakage is suppressed.

[0029] In one embodiment, the first width w1 is, for example, 1 μm or more and 3 μm or less. The first width w1 may be about 2 μm. A narrow luminous beam and a narrow electron beam can be obtained.

[0030] The second width w2 can be, for example, between 1 μm and 8 μm. For example, the ratio of the absolute value of the difference between the second width w2 and the first width w1 to the first width w1 can be 0.1 or greater. For example, this suppresses the decrease in efficiency caused by misalignment.

[0031] As shown in Figure 1, the distance between the light-emitting layer 13 and the light-attenuating layer 20 along the first direction D1 is defined as the first distance d1. In this embodiment, the first distance d1 may be 6 μm or less. This suppresses the decrease in efficiency due to the divergence of light 81. The first distance d1 may also be 4 μm or less. This further suppresses the decrease in efficiency due to the divergence of light 81. The first distance d1 may also be 2 μm or less.

[0032] In one example, the first distance d1 may be 0.5 μm or greater. This suppresses an excessive increase in electrical resistance between the first electrode 51 and the second electrode 52. For example, an appropriate and practical operating voltage can be obtained.

[0033] For example, the first distance d1 may be not more than twice the first width w1. A ratio of the first distance d1 to the first width w1 may be not less than 0.5 and not more than 6.

[0034] As shown in FIG. 2(b), in the embodiment, the opening 25 may be circular. For example, uniformly distributed electrons 82 are easily obtained.

[0035] As shown in FIG. 1, the light-emitting layer 13 includes a plurality of first films 13a and a second film 13b. In a first direction D1, the second film 13b is located between one of the plurality of first films 13a and another one of the plurality of first films 13a. The light-emitting layer 13 may include a plurality of second films 13b. One of the plurality of first films 13a is located between one of the plurality of second films 13b and another one of the plurality of second films 13b. The first films 13a and the second films 13b may be alternately provided in the first direction D1.

[0036] The plurality of first films 13a contain In x1 Al y1 Ga 1-x1-y1 N (0≦x1≦1, 0≦y1≦1, x1+y1≦1). The second film 13b contains In x2 Al y2 Ga 1-x2-y2 N (0≦x2≦1, 0≦y2≦1, x2+y2≦1, x1≠x2, y1≠y2).

[0037] For example, a band gap energy of one of the plurality of first films 13a is higher than a band gap energy of the second film 13b. The plurality of first films 13a function as, for example, barrier layers. The second film 13b functions as a quantum well layer.

[0038] The first semiconductor layer 11 contains, for example, In x3 Al y3 Ga 1-x3-y3 N (0≦x3≦1, 0≦y3≦1, x3+y3≦1). The first semiconductor layer 11 contains, for example, at least one selected from the group consisting of Si, Ge, Te and Sn. These elements function as, for example, n-type impurities.

[0039] The second semiconductor layer 12 is, for example, In x4 Al y4 Ga 1-x4-y4 The second semiconductor layer 12 includes (0≦x4≦1, 0≦y4≦1, x4+y4≦1). The second semiconductor layer 12 includes, for example, at least one selected from the group consisting of Mg, Zn, and C. These elements function, for example, as p-type impurities.

[0040] Figure 3 is a schematic cross-sectional view illustrating an electron source according to the first embodiment. Figures 4(a) and 4(b) are schematic cross-sectional views illustrating an electron source according to the first embodiment. Figure 3 is a cross-sectional view taken along the line B1-B2 in Figures 4(a) and 4(b). As shown in Figure 3, in the electron source 111 according to this embodiment, the optical attenuation layer 20 includes a first optical attenuation section 21. The configuration of the electron source 111, excluding this section, may be the same as that of the electron source 110.

[0041] In the electron source 111, the first electrode 51, the second electrode 52, the first semiconductor layer 11, the second semiconductor layer 12, the light-emitting layer 13, and the light-attenuating layer 20 are included in the light-emitting device 211.

[0042] In the electron source 111 and light-emitting device 211, the first conversion region 31 included in the conversion layer 30 is located between the first partial region 11a and the second partial region 11b in a direction intersecting the first direction D1 (for example, a direction along the XY plane). Figure 4(a) is a cross-sectional view in a plane including the light-emitting layer 13. Figure 4(b) is a cross-sectional view in a plane including the first light attenuation section 21 and the first semiconductor layer 11.

[0043] As shown in Figures 4(a) and 4(b), the first light attenuation portion 21 is along the outer edge 13r of the light-emitting layer 13. The first light attenuation portion 21 is, for example, annular. At least a portion of the second sub-region 11b is located within the annular first light attenuation portion 21.

[0044] In the electron source 111 and light-emitting device 211, for example, a portion of the light 81 emitted from the light-emitting layer 13 is attenuated by the first light attenuation unit 21. A narrower, higher-intensity light beam can be obtained stably. A narrower, higher-density electron beam can be obtained. (Second Embodiment) Figures 5 and 6 are schematic cross-sectional views illustrating an electron source according to the second embodiment. As shown in Figures 5 and 6, the electron source 120 according to the embodiment is provided with a plurality of light-emitting layers 13 and a plurality of openings 25. The configuration of the electron source 120, excluding these, may be the same as that of the electron source 110 or electron source 111. In the electron source 120, the first electrode 51, the second electrode 52, the first semiconductor layer 11, the second semiconductor layer 12, the light-emitting layer 13, and the light-attenuating layer 20 are included in the light-emitting device 220.

[0045] Figure 5 corresponds to a cross-sectional view in a plane including the first electrode 51 and the second electrode 52. Figure 6 corresponds to a cross-sectional view in a plane including the optical attenuation layer 20.

[0046] Multiple light-emitting layers 13 are provided in the electron source 120 and the light-emitting device 220. Multiple apertures 25 are provided in the light-attenuating layer 20.

[0047] For example, multiple light-emitting layers 13 are aligned along a first plane PL1 that intersects with a first direction D1. Multiple openings 25 are aligned along the first plane PL1.

[0048] For example, multiple light-emitting layers 13 are aligned along a second direction D2 and a third direction D3. The second direction D2 intersects with the first direction D1. For example, multiple light-emitting layers 13 are aligned along a third direction D3. The third direction D3 intersects with a plane containing the first direction D1 and the second direction D2. For example, multiple openings 25 are aligned along the second direction D2 and the third direction D3. For example, one of the multiple light-emitting layers 13 overlaps with another of the multiple light-emitting layers 13 in the first direction D1.

[0049] For example, multiple second electrodes 52 may be provided corresponding to multiple light-emitting layers 13.

[0050] As shown in Figure 5, for example, a plurality of first electrodes 51 may be provided. As shown in Figure 6, the optical attenuation layer 20 includes a first optical attenuation region 20a and a second optical attenuation region 20b. The first optical attenuation region 20a overlaps with one of the plurality of first electrodes 51 in the first direction D1. The second optical attenuation region 20b overlaps with another of the plurality of first electrodes 51 in the first direction D1. The second optical attenuation region 20b is continuous with the first optical attenuation region 20a.

[0051] For example, a series of optical attenuation layers 20 may have multiple apertures 25. For example, the optical attenuation layer 20 may be conductive. The potential will be the same around the multiple apertures 25. A stable and uniform intensity of electrons 82 can be obtained.

[0052] The multiple light-emitting layers 13 may be configured to emit light 81 independently of each other. For example, one of the multiple first electrodes 51 and one of the multiple second electrodes 52 may be selected and supplied with current. For example, light 81 may be emitted by point-sequential or line-sequential operation, and electrons 82 may be emitted in response to this light 81.

[0053] For example, a laminate including a first semiconductor layer 11, an emissive layer 13, and a second semiconductor layer 12 is formed on a substrate by epitaxial growth. The substrate may include, for example, sapphire. After these layers are formed, the first semiconductor layer 11 may be separated from the substrate. This results in a thin first semiconductor layer 11. Separation may be performed, for example, by laser irradiation and polishing, or at least one of the latter. An optical attenuation layer 20 may be formed on the surface of the first semiconductor layer 11 that has been separated from the substrate. After the formation of the optical attenuation layer 20, a conversion layer 30 may be formed.

[0054] In the embodiment, the conversion layer 30 may include a phosphor. The light-emitting device according to the embodiment (for example, the light-emitting device 210) includes a first electrode 51, a second electrode 52, a first semiconductor layer 11, a second semiconductor layer 12, a light-emitting layer 13, and a light-attenuating layer 20. The first semiconductor layer 11 includes a first partial region 11a and a second partial region 11b and is of the first conductivity type. The second semiconductor layer 12 is provided between the second electrode 52 and the second partial region 11b in the first direction D1 and is of the second conductivity type. The direction from the first partial region 11a to the second partial region 11b intersects with the first direction D1. The direction from the first electrode 51 to the first partial region 11a follows the first direction D1. The light-emitting layer 13 is provided between the second semiconductor layer 12 and the second partial region 11b. An aperture 25 is provided in the light attenuation layer 20. The second partial region 11b is located between the second electrode 52 and at least a portion of the light attenuation layer 20 in the first direction D1. The light-emitting layer 13 overlaps with the aperture 25 in the first direction D1. According to this embodiment, a narrow, high-intensity beam of light 81 can be obtained. A light-emitting device with improved characteristics can be provided.

[0055] In the embodiment, information regarding the shape of electrodes and semiconductor layers is obtained, for example, by electron microscopy observation. Information regarding the composition and elemental concentration in the semiconductor layer is obtained, for example, by EDX (Energy Dispersive X-ray Spectroscopy) or SIMS (Secondary Ion Mass Spectrometry).

[0056] The embodiments may include the following technical proposals. (Technical proposal 1) First electrode and, The second electrode and A first semiconductor layer of a first conductivity type, including a first subregion and a second subregion, A second semiconductor layer of a second conductivity type is provided between the second electrode and the second partial region in a first direction, wherein the direction from the first partial region to the second partial region intersects the first direction, and the direction from the first electrode to the first partial region is along the first direction. A light-emitting layer provided between the second semiconductor layer and the second partial region, A light-attenuating layer having an opening, wherein the second partial region is located between the second electrode and at least a portion of the light-attenuating layer in the first direction, and the light-emitting layer overlaps with the opening in the first direction with respect to the light-attenuating layer. An electron source comprising a conversion layer including a first conversion region, wherein at least a portion of the first conversion region overlaps with the opening in a first direction, and the light-emitting layer is located between the second electrode and the first conversion region in a first direction.

[0057] (Technical proposal 2) The electron source according to Technical Proposal 1, wherein the conversion layer is configured to emit electrons in response to light emitted from the light-emitting layer.

[0058] (Technical proposal 3) The electron source described in Technical Proposal 2, wherein the peak wavelength of the aforementioned light is 220 nm or more and 450 nm or less.

[0059] (Technical proposal 4) The aforementioned conversion layer is In z1 Al z2 Ga 1-z1-z2 An electron source according to any one of the technical proposals 1 to 3, comprising at least one selected from the group consisting of (0≦z1≦1, 0≦z2≦1, z1+z2≦1), diamond, BN, and AlN.

[0060] (Technical proposal 5) The conversion layer further includes a second conversion region, At least a portion of the optical attenuation layer is an electron source according to any one of the technical proposals 1 to 4, located between the first semiconductor layer and the second conversion region.

[0061] (Technical proposal 6) The aforementioned optical attenuation layer is an electron source according to any one of Technical Proposals 1 to 5, which includes a metal.

[0062] (Technical proposal 7) An electron source according to any one of Technical Proposals 1 to 6, wherein a portion of the light-emitting layer overlaps with the light-attenuating layer in the first direction. (Technical proposal 8) An electron source according to any one of Technical Proposals 1 to 7, wherein the first width of the opening along the second direction intersecting the first direction is smaller than the second width of the light-emitting layer along the second direction.

[0063] (Technical proposal 9) The electron source according to Technical Proposal 8, wherein the first width is 1 μm or more and 3 μm or less.

[0064] (Technical proposal 10) The electron source described in Technical Proposal 9, wherein the second width is 1 μm or more and 8 μm or less.

[0065] (Technical proposal 11) The electron source according to any one of the technical proposals 1 to 10, wherein the first distance along the first direction between the light-emitting layer and the light-attenuating layer is 6 μm or less.

[0066] (Technical proposal 12) The electron source according to Technical Proposal 8, wherein the first distance along the first direction between the light-emitting layer and the light-attenuating layer is no more than twice the first width.

[0067] (Technical proposal 13) The light attenuation layer further includes a first light attenuation section, At least a portion of the first light attenuation portion is located between the first partial region and the second partial region in a direction intersecting the first direction, as described in any one of the technical proposals 1 to 12.

[0068] (Technical proposal 14) The first light attenuation section is an electron source according to technical proposal 13, along the outer edge of the light-emitting layer.

[0069] (Technical proposal 15) The electron source according to any one of Technical Proposals 1 to 14, wherein the opening is circular.

[0070] (Technical proposal 16) Multiple light-emitting layers are provided, In the light attenuation layer, a plurality of the openings are provided, An electron source according to any one of the technical proposals 1 to 15, wherein one of the plurality of openings overlaps with one of the plurality of light-emitting layers in the first direction.

[0071] (Technical proposal 17) Multiple first electrodes are provided, The light attenuation layer includes a first light attenuation region and a second light attenuation region. The first light attenuation region overlaps with one of the plurality of first electrodes in the first direction, The second light attenuation region overlaps with another one of the plurality of first electrodes in the first direction, The electron source described in Technical Proposal 16, wherein the second optical attenuation region is continuous with the first optical attenuation region.

[0072] (Technical proposal 18) The plurality of light-emitting layers are arranged along a first plane intersecting the first direction, The plurality of openings are arranged along the first plane, as described in the electron source according to the technical proposal 16 or 17.

[0073] (Technical proposal 19) The light-emitting layer includes a plurality of first films and a second film, The second film is located in the first direction between one of the plurality of first films and another of the plurality of first films. The plurality of first films are, x1 Al y1 Ga 1-x1-y1 (including 0≦x1≦1, 0≦y1≦1, x1+y1≦1), The second film is In x2 Al y2 Ga 1-x2-y2 An electron source described in any one of Technical Proposals 1 to 18, including (0≦x2≦1, 0≦y2≦1, x2+y2≦1, x1≠x2, y1≠y2).

[0074] (Technical proposal 20) The first semiconductor layer is Inx3 Al y3 Ga 1-x3-y3 (including 0≦x3≦1, 0≦y3≦1, x3+y3≦1), The first semiconductor layer comprises at least one selected from the group consisting of Si, Ge, Te, and Sn. The aforementioned second semiconductor layer is In x4 Al y4 Ga 1-x4-y4 (including 0≦x4≦1, 0≦y4≦1, x4+y4≦1), The electron source according to any one of the technical proposals 1 to 19, wherein the second semiconductor layer includes at least one selected from the group consisting of Mg, Zn, and C.

[0075] According to the embodiment, an electron source and a light-emitting device capable of improving characteristics can be provided.

[0076] In this specification, "perpendicular" and "parallel" do not mean strictly perpendicular and strictly parallel, but also include variations in the manufacturing process, for example, and it is sufficient if they are substantially perpendicular and substantially parallel.

[0077] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configuration of each element, such as electrodes, semiconductor layers, optical attenuation layers, and conversion layers, included in the electron source is included within the scope of the present invention as long as those skilled in the art can appropriately select from the known range to implement the present invention and obtain similar effects.

[0078] Furthermore, combinations of two or more elements from any of the specific examples, to the extent technically feasible, are also included within the scope of the present invention, insofar as they encompass the gist of the present invention.

[0079] Furthermore, all electron sources that a person skilled in the art can implement by appropriately modifying the design based on the electron source described above as an embodiment of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention.

[0080] Furthermore, within the scope of the concept of the present invention, a person skilled in the art could conceive of various modifications and alterations, and it is understood that such modifications and alterations also fall within the scope of the present invention.

[0081] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0082] 11, 12: First and second semiconductor layers, 11a, 11b: First and second partial regions, 13: Light-emitting layer, 13a, 13b: First and second films, 13r: Outer edge, 20: Light-attenuating layer, 20a, 20b: First and second light-attenuating regions, 21: First light-attenuating portion, 25: Aperture, 30: Conversion layer, 31, 32: First and second conversion regions, 51, 52: First and second electrodes, 81: Light, 82: Electrons, 110, 111, 120: Electron sources, 210, 211, 220: Light-emitting devices, D1~D3: First to third directions, PL1: First plane, d1: First distance, w1, w2: First and second widths

Claims

1. First electrode and The second electrode and A first semiconductor layer of a first conductivity type, including a first partial region and a second partial region, A second semiconductor layer of a second conductivity type is provided between the second electrode and the second partial region in a first direction, wherein the direction from the first partial region to the second partial region intersects the first direction, and the direction from the first electrode to the first partial region is along the first direction. A light-emitting layer provided between the second semiconductor layer and the second partial region, A light-attenuating layer having an opening, wherein the second partial region is located between the second electrode and at least a portion of the light-attenuating layer in the first direction, and the light-emitting layer overlaps with the opening in the first direction with respect to the light-attenuating layer. An electron source comprising a conversion layer including a first conversion region, wherein at least a portion of the first conversion region overlaps with the opening in a first direction, and the light-emitting layer is located between the second electrode and the first conversion region in a first direction.

2. The electron source according to claim 1, wherein the conversion layer is configured to emit electrons in response to light emitted from the light-emitting layer.

3. The aforementioned conversion layer is In ｚ１ Al ｚ２ Ga １－ｚ１－ｚ２ The electron source according to claim 1, comprising at least one selected from the group consisting of (0 ≤ z1 ≤ 1, 0 ≤ z2 ≤ 1, z1 + z2 ≤ 1), diamond, BN, and AlN.

4. The electron source according to any one of claims 1 to 3, wherein the first width of the opening along the second direction intersecting the first direction is smaller than the second width of the light-emitting layer along the second direction.

5. The electron source according to claim 4, wherein the first width is 1 μm or more and 3 μm or less.

6. The electron source according to any one of claims 1 to 3, wherein the first distance along the first direction between the light-emitting layer and the light-attenuating layer is 6 μm or less.

7. The light attenuation layer further includes a first light attenuation section, The electron source according to any one of claims 1 to 3, wherein at least a portion of the first light attenuation portion is located between the first partial region and the second partial region in a direction intersecting the first direction.

8. The first light attenuation portion is an electron source according to claim 7, which is located along the outer edge of the light-emitting layer.

9. Multiple light-emitting layers are provided, In the light attenuation layer, a plurality of the openings are provided, The electron source according to any one of claims 1 to 3, wherein one of the plurality of openings overlaps with one of the plurality of light-emitting layers in the first direction.

10. Multiple first electrodes are provided, The light attenuation layer includes a first light attenuation region and a second light attenuation region. The first light attenuation region overlaps with one of the plurality of first electrodes in the first direction, The second light attenuation region overlaps with another one of the plurality of first electrodes in the first direction, The electron source according to claim 9, wherein the second light attenuation region is continuous with the first light attenuation region.

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