Method for manufacturing a solid-state imaging device and solid-state imaging device

Abstract

The present invention provides a method for manufacturing a solid-state imaging device that suppresses a decrease in reliability. [Solution] The method for manufacturing a solid-state imaging device includes the steps of: bonding a solid-state image sensor 10 to a wiring board 20 via an adhesive 50 to obtain a "solid-state image sensor mounted on a wiring board" 15; forming a frame 40 on a transparent substrate 30 to obtain a "transparent substrate with frame" 35; and thermocompressing the "transparent substrate with frame" 35 to the "solid-state image sensor mounted on a wiring board" 15 to obtain a solid-state imaging device. In the thermocompression step, the "transparent substrate with frame" 35 is thermocompressed to the "solid-state image sensor mounted on a wiring board" 15 by heating with a stage 70 or by the stage 70 and a bond head 80, and by applying pressure through a collet 90 with the bond head 80. At least a portion of the collet 90 contains a rubbery material, and the elastic modulus of at least a portion of the collet 90 is 100 MPa or less.

Description

[[Technical Field]]

[0001] The present invention relates to a method for manufacturing a solid-state imaging device and a solid-state imaging device. [[Background Art]]

[0002] Solid-state imaging devices, which are image sensors such as CMOS sensors or CCD sensors, are known. Such a solid-state imaging device includes, for example, a solid-state imaging element (semiconductor chip), a transparent substrate disposed to face the solid-state imaging element, and the solid-state imaging element and the transparent substrate arranged to surround an imaging region of the solid-state imaging element. The solid-state imaging device has a hollow structure in which the imaging region of the solid-state imaging element is sealed by the transparent substrate and the frame (see, for example, Patent Document 1). [[Prior Art Literature]] [[Patent Literature]]

[0003] [[Patent Document 1]] Japanese Unexamined Patent Publication No. 2014-216475 [[Summary of the Invention]] [[Problem to be Solved by the Invention]]

[0004] In the manufacture of such an imaging device, for example, - Bonding a solid-state imaging element to a wiring substrate via an adhesive to obtain "a solid-state imaging element mounted on a wiring substrate", - Forming a frame on a transparent substrate to obtain "a transparent substrate with a frame", - Thermocompression bonding the "transparent substrate with a frame" to the "solid-state imaging element mounted on a wiring substrate".

[0005] In the thermocompression bonding step, - Mounting the "solid-state imaging element mounted on a wiring substrate" on a stage, - Adsorbing the "transparent substrate with a frame" via a collet by a bonding head, and mounting it on the "solid-state imaging element mounted on a wiring substrate", The transparent substrate with a frame is heat-pressed onto the solid-state image sensor mounted on the wiring board by heating by the stage or by the stage and bond head, and by pressurizing through the collet by the bond head.

[0006] In the manufacturing of such imaging devices, when solid-state image sensors are bonded to a wiring board, the thickness of the adhesive can become uneven, causing the solid-state image sensor to tilt. Also, when a frame is formed by patterning a resin composition, a frame with a high height / width aspect ratio is obtained, but the frame is difficult to deform.

[0007] Therefore, if the solid-state image sensor is tilted, when the framed transparent substrate is heat-pressed onto the solid-state image sensor mounted on the wiring board, the load on the frame located on the side where the solid-state image sensor is higher increases, raising concerns that the reliability of the solid-state imaging device (reflow resistance, heat cycle resistance, etc.) may decrease.

[0008] The present invention aims to provide a method for manufacturing a solid-state imaging device and a solid-state imaging device that suppresses a decrease in reliability. [Means for solving the problem]

[0009] A method for manufacturing a solid-state imaging device according to the present invention comprises a solid-state image sensor, a wiring board on which the solid-state image sensor is mounted, a transparent substrate arranged opposite to the solid-state image sensor, and a frame arranged between the solid-state image sensor and the transparent substrate so as to surround the imaging area of ​​the solid-state image sensor, The process of attaching the solid-state image sensor to the wiring board via an adhesive to obtain a "solid-state image sensor mounted on a wiring board," The process of forming the frame on the transparent substrate to obtain a "transparent substrate with frame", The process of thermally pressing the "transparent substrate with frame" onto the "solid-state image sensor mounted on the wiring board," Includes. In the aforementioned heat-pressing process, The aforementioned "solid-state image sensor mounted on a wiring board" is mounted on the stage, The bond head uses a collet to pick up the "transparent substrate with frame" and mount it onto the "solid-state image sensor mounted on the wiring board," The solid-state imaging device is obtained by heating by the stage or by the stage and the bond head, and by applying pressure through the collet by the bond head, thereby thermocompressing the "transparent substrate with frame" onto the "solid-state image sensor mounted on the wiring board". At least a portion of the collet contains a rubbery material, and the elastic modulus of at least a portion of the collet is 100 MPa or less.

[0010] The solid-state imaging device according to the present invention is a solid-state imaging device manufactured by the manufacturing method described above.

[0011] Furthermore, the solid-state imaging device according to the present invention comprises a solid-state image sensor, a wiring board on which the solid-state image sensor is mounted, a transparent substrate arranged opposite to the solid-state image sensor, and a frame arranged between the solid-state image sensor and the transparent substrate so as to surround the imaging area of ​​the solid-state image sensor, wherein the solid-state image sensor is bonded to the wiring board via an adhesive. If ΔT1 is the difference between the height of one end of the solid-state image sensor and the height of the other end, ΔT2 is the difference between the height of one end of the wiring board and the height of the other end, and ΔT3 is the difference between the height of one end of the transparent substrate and the height of the other end, then the absolute value of (ΔT3-ΔT1) is smaller than the absolute value of (ΔT3-ΔT2).

[0012] Another solid-state imaging device according to the present invention comprises: a solid-state imaging element; a wiring board on which said solid-state imaging element is mounted; a transparent substrate disposed to face said solid-state imaging element; and a frame disposed between said solid-state imaging element and said transparent substrate so as to surround an imaging region of said solid-state imaging element, wherein said solid-state imaging element is bonded to said wiring board via an adhesive, letting ΔT1 be the difference between the height of one end and the height of the other end of the solid-state imaging element, and ΔT4 be the difference between the height of one end side of the solid-state imaging element and the height of the other end side of the solid-state imaging element among two opposing portions of said frame, ΔT4<ΔT1 is satisfied. Effects of the Invention

[0013] According to the present invention, in a solid-state imaging device, a decrease in reliability caused by tilting of the solid-state imaging element generated due to non-uniform thickness of the adhesive can be suppressed. Brief Description of the Drawings

[0014] [Figure 1] It is a schematic diagram showing the solid-state imaging device according to the present embodiment viewed from the light-receiving surface side. [Figure 2] It is a schematic cross-sectional view of the solid-state imaging device according to the present embodiment, which is a cross-sectional view taken along line II-II shown in Fig. 1. [Figure 3A] It is a schematic diagram showing the step of obtaining a "transparent substrate with a frame" in the method for manufacturing the solid-state imaging device according to the present embodiment. [Figure 3B] It is a schematic diagram showing the step of obtaining a "transparent substrate with a frame" in the method for manufacturing the solid-state imaging device according to the present embodiment. [Figure 3C] It is a schematic diagram showing the step of obtaining a "transparent substrate with a frame" in the method for manufacturing the solid-state imaging device according to the present embodiment. [Figure 3D] It is a schematic diagram showing the step of obtaining a "transparent substrate with a frame" in the method for manufacturing the solid-state imaging device according to the present embodiment. [Figure 3E] It is a schematic diagram showing the step of obtaining a "transparent substrate with a frame" in the method for manufacturing the solid-state imaging device according to the present embodiment. [Figure 4A] It is a schematic diagram showing the step of obtaining "the solid-state image sensor mounted on the wiring substrate" in the method for manufacturing a solid-state imaging device according to the present embodiment. [Figure 4B] It is a schematic diagram showing the step of obtaining "the solid-state image sensor mounted on the wiring substrate" in the method for manufacturing a solid-state imaging device according to the present embodiment. [Figure 5A] It is a schematic diagram showing the combining step (particularly the thermocompression bonding step) of "the solid-state image sensor mounted on the wiring substrate" and "the transparent substrate with a frame" in the method for manufacturing a solid-state imaging device according to the present embodiment. [Figure 5B] It is a schematic diagram showing the combining step (particularly the thermocompression bonding step) of "the solid-state image sensor mounted on the wiring substrate" and "the transparent substrate with a frame" in the method for manufacturing a solid-state imaging device according to the present embodiment. [Figure 5C] It is a schematic diagram showing the combining step of "the solid-state image sensor mounted on the wiring substrate" and "the transparent substrate with a frame" in the method for manufacturing a solid-state imaging device according to the present embodiment. [Figure 5D] It is a schematic diagram showing the combining step of "the solid-state image sensor mounted on the wiring substrate" and "the transparent substrate with a frame" in the method for manufacturing a solid-state imaging device according to the present embodiment. [Figure 5E] It is a schematic diagram showing the combining step of "the solid-state image sensor mounted on the wiring substrate" and "the transparent substrate with a frame" in the method for manufacturing a solid-state imaging device according to the present embodiment. [Figure 6A] It is a schematic cross-sectional view of a collet used in the method for manufacturing a solid-state imaging device according to the present embodiment, which is a cross-sectional view taken along line VIA-VIA shown in FIG. 6B. [Figure 6B] It is a schematic plan view of a collet used in the method for manufacturing a solid-state imaging device according to the present embodiment. [Figure 7A] It is a schematic cross-sectional view of a solid-state imaging device according to a modification of the present embodiment. [Figure 7B] It is a schematic diagram showing a thermocompression bonding step corresponding to FIG. 5B in the combining step of "the solid-state image sensor mounted on the wiring substrate" and "the transparent substrate with a frame" in the method for manufacturing a solid-state imaging device according to a modification of the present embodiment. [Figure 8] This is a schematic diagram showing the thermocompression bonding process corresponding to Figure 5B, which is a combination process of a "solid-state image sensor mounted on a wiring board" and a "transparent substrate with a frame" in the manufacturing method of a solid-state imaging device according to a comparative example. [Modes for carrying out the invention]

[0015] An example of an embodiment of the present invention will be described below with reference to the attached drawings. The same or corresponding parts will be denoted by the same reference numerals in each drawing. For convenience, hatching and component reference numerals may be omitted; in such cases, refer to other drawings.

[0016] (Solid-state imaging device) Figure 1 is a schematic diagram showing the solid-state imaging device according to this embodiment from the light-receiving surface side, and Figure 2 is a schematic cross-sectional view of the solid-state imaging device according to this embodiment, which is a cross-sectional view taken along line II-II shown in Figure 1. The solid-state imaging device 1 shown in Figures 1 and 2 is an image sensor such as a CMOS sensor or a CCD sensor, and is a so-called GoC (Glass on Chip) type solid-state imaging device. The solid-state imaging device 1 comprises a solid-state image element 10, a wiring board 20, a transparent substrate 30, and a frame (rib material) 40.

[0017] <Solid-state image sensor> The solid-state image sensor 10 is a semiconductor chip of an image sensor such as a CMOS sensor or a CCD sensor. The semiconductor chip is made up of, for example, a silicon substrate (wafer) and has an imaging region 12 that includes a plurality of pixels arranged in two dimensions. Each pixel is made up of, for example, a photodiode. A color filter or microlens may be placed on the imaging region 12. The solid-state image sensor 10 is mounted and bonded to the wiring board 20 via an adhesive 50.

[0018] As the adhesive 50, a photocurable or thermocurable adhesive, or a photocurable and thermocurable adhesive can be used. Examples of adhesives include curable resins such as epoxy resin, acrylic resin, or silicone resin. Furthermore, the adhesive may contain fillers such as silica from the viewpoint of viscosity adjustment, etc.

[0019] <Wiring board> The wiring board 20 is a substrate on which wiring is formed. The wiring board 20 and the solid-state image sensor 10 are electrically connected by wiring 22, such as bonding wires. In addition, conductive members 24, such as solder balls, are electrically connected to the wiring board 20 for the transfer of signals and power between the solid-state image sensor 10 and the outside. The wiring 22 may be covered with potting resin 60.

[0020] Examples of the wiring board 20 include organic materials such as polyimide, polyester, ceramic, epoxy, bismaleimide triazine, and phenolic resin; structures obtained by impregnating paper or glass fiber nonwoven fabric with the aforementioned organic materials and heat-curing them; ceramics such as alumina, aluminum nitride, beryllium oxide, and silicon nitride; and metal substrates. Among these, glass epoxy substrates and ceramic substrates are preferred. Circuits having metal wiring patterns, metal bumps, metal vias, or metal film-coated through-holes can be formed on the surface or inside these insulating substrates. The wiring board 20 can be flexible (flexible, pliable).

[0021] As the potting resin 60, a photocurable or thermocurable resin composition, or a photocurable and thermocurable resin composition can be used. Examples of resin compositions include curable resins such as epoxy resins, acrylic resins, or silicone resins.

[0022] <Transparent substrate> The transparent substrate 30 is positioned to face the solid-state image sensor 10, specifically, to face the main surface of the solid-state image sensor 10 on which the imaging region 12 is formed. The transparent substrate 30 can be made of glass, acrylic resin, or a transparent plastic such as polycarbonate, and glass is preferred from the viewpoint of reliability. The type of glass is not particularly limited, but examples include quartz glass, borosilicate glass, and alkali-free glass.

[0023] If necessary, coatings such as an infrared reflective film (or infrared cut filter), an anti-reflective film (AR coating), a protective film, or a reinforcing film can be formed on the surface of the transparent substrate 30. Anti-reflective films and infrared reflective films (or infrared cut filters) are particularly preferred because they reduce optical noise in the captured image. In particular, when an anti-reflective film is used as the coating, it is preferable to use several types of multilayer films selected from TiO2, Nb2O5, Ta2O5, CaF2, SiO2, Al2O3, MgS2, ZrO2, NiO, or MgF2.

[0024] These coatings can be applied to either one or both sides of the glass. When applied to both sides, the types of coatings may be the same or different. It is also possible to laminate different types of coatings with the same function on a single surface, or to laminate different types of coatings with different functions. There are no particular limitations on the number of layers, and it can be a multilayer structure of several to several tens of layers.

[0025] <frame> The frame (rib material) 40 is positioned between the solid-state image sensor 10 and the transparent substrate 30 so as to surround the imaging area 12 of the solid-state image sensor 10. The frame 40, the solid-state image sensor 10, and the transparent substrate 30 are bonded together by the adhesive strength of the frame 40 material.

[0026] Examples of frame 40 include photocurable resins such as epoxy resin, acrylic resin, or silicone resin, thermosetting resins, or photocurable and thermosetting resins.

[0027] In this way, in the solid-state imaging device 1, the imaging area 12 of the solid-state image sensor 10 is sealed by the transparent substrate 30 and the frame 40. Furthermore, the solid-state imaging device 1 has a hollow structure with space above the imaging area 12 of the solid-state image sensor 10.

[0028] Furthermore, in the solid-state imaging device 1, the solid-state image sensor 10 and the transparent substrate 30 are tilted relative to the wiring board 20 due to the uneven thickness of the adhesive 50. For example, the height of the adhesive 50 may be uneven by several tens of micrometers relative to the height of the frame 40 (width 150 μm). As a result, the difference between the height of the surface at one end of the solid-state image sensor 10 and the height of the surface at the other end, and the difference between the height of the surface at one end of the transparent substrate 30 and the height of the surface at the other end, may be several tens of micrometers.

[0029] If ΔT1 is the difference between the surface height of one end of the solid-state image sensor 10 and the surface height of the other end, ΔT2 is the difference between the surface height of one end of the wiring board 20 and the surface height of the other end, and ΔT3 is the difference between the surface height of one end of the transparent substrate 30 and the surface height of the other end, then the absolute value of (ΔT3-ΔT1) is smaller than the absolute value of (ΔT3-ΔT2).

[0030] Here, "height of the surface at one end of the solid-state image sensor 10" and "height of the surface at the other end of the solid-state image sensor 10" refer to the absolute height from the horizontal plane when the solid-state imaging device 1 is placed on a horizontal plane. For example, if the back surface of the wiring board 20 in the solid-state imaging device 1, excluding the conductive member 24, is placed on a horizontal plane, it corresponds to the absolute height from the back surface of the wiring board 20. Similarly, "height of the surface at one end of the wiring board 20" and "height of the surface at the other end of the wiring board 20" refer to the absolute height from the horizontal plane when the solid-state imaging device 1 is placed on a horizontal plane. For example, if the back surface of the wiring board 20 in the solid-state imaging device 1, excluding the conductive member 24, is placed on a horizontal plane, it corresponds to the absolute height from the back surface of the wiring board 20. Similarly, "height of the surface at one end of the transparent substrate 30" and "height of the surface at the other end of the transparent substrate 30" refer to the absolute height from the horizontal plane when the solid-state imaging device 1 is placed on a horizontal plane. For example, if the back surface of the wiring board 20 in the solid-state imaging device 1, excluding the conductive member 24, is placed on a horizontal plane, it corresponds to the absolute height from the back surface of the wiring board 20.

[0031] In other words, if we consider one end of the solid-state image sensor 10 as one part (the left frame part in Figure 2) and the other end as the other part (the right frame part in Figure 2), and let ΔT4 be the difference between the height of one frame part and the height of the other frame part, then ΔT4 < ΔT1 is satisfied. Here, "the height of one frame part" and "the height of the other frame part" refer to the height of each frame part itself, and may be, for example, the height of the center in the longitudinal direction (depth direction in Figure 2) and the center in the width direction (left-right direction in Figure 2) of each frame part.

[0032] (Manufacturing method for solid-state imaging devices) Next, the manufacturing method of the solid-state imaging device according to this embodiment will be described with reference to Figures 3A to 3E, 4A to 4B, 5A to 5E, and 6A to 6B. Figures 3A to 3E are schematic diagrams showing the process of obtaining a "transparent substrate with frame" in the manufacturing method of the solid-state imaging device according to this embodiment, and Figures 4A to 4B are schematic diagrams showing the process of obtaining a "solid-state image sensor mounted on a wiring board" in the manufacturing method of the solid-state imaging device according to this embodiment. Figures 5A to 5E are schematic diagrams showing the process of combining the "solid-state image sensor mounted on a wiring board" and the "transparent substrate with frame" in the manufacturing method of the solid-state imaging device according to this embodiment, and in particular Figures 5A to 5B are schematic diagrams showing the thermocompression bonding process. Furthermore, Figure 6A is a schematic cross-sectional view of a collet used in the manufacturing method of the solid-state imaging device according to this embodiment, and is a VIA-VIA line cross-sectional view shown in Figure 6B, and Figure 6B is a schematic plan view of a collet used in the manufacturing method of the solid-state imaging device according to this embodiment.

[0033] <Process for obtaining a "transparent substrate with frame"> First, as shown in Figures 3A to 3E, a transparent substrate 30 with a frame 40 formed on it, i.e., a "framed transparent substrate" 35, is fabricated. For example, as shown in Figure 3A, a resin solution is applied to a large transparent substrate 30Z to form a resin film 40Z (first laminate 35A), and as shown in Figure 3B, a photomask M (line pattern M1) is used to expose a portion 40 of the resin film 40Z, and the exposed portion 40 is developed and patterned. This forms multiple frames (ribs, frame-shaped walls with a patterned resin composition) 40 on the large transparent substrate 30Z, as shown in Figures 3C and 3D (second laminate 35B). Then, the large transparent substrate 30Z is cut into individual pieces along the cut line CL. This yields multiple "framed transparent substrates" 35 with frames 40 formed on the transparent substrate 30, as shown in Figure 3E.

[0034] <Process for obtaining a "solid-state image sensor mounted on a wiring board"> Furthermore, as shown in Figures 4A and 4B, a solid-state image sensor 10 mounted on a wiring board 20, i.e., a "solid-state image sensor mounted on a wiring board" 15, is fabricated. For example, multiple solid-state image sensors 10 are bonded to a large-format wiring board 20Z via adhesive 50, and the multiple solid-state image sensors 10 and the large-format wiring board 20Z are connected by wiring 22 such as bonding wires. This yields multiple "solid-state image sensors mounted on wiring boards" 15. Alternatively, a single "solid-state image sensor mounted on a wiring board" 15 may be obtained.

[0035] <Combination Process> <<Thermocompression bonding process>> Next, as shown in Figures 5A to 5D, multiple "framed transparent substrates" 35 are combined with multiple "solid-state image sensors mounted on wiring boards" 15. For example, as shown in Figure 5A, multiple "solid-state image sensors mounted on wiring boards" 15 are mounted on the stage 70. The bond head 80 then picks up the "framed transparent substrates" 35 one by one via the collet 90 and mounts them on each of the multiple "solid-state image sensors mounted on wiring boards" 15. The collet may be integrated with the bond head 80 or it may be a removable mechanism.

[0036] Here, as shown in Figure 5B, the stage 70 has a heating mechanism for heating the "solid-state image sensor mounted on the wiring board" 15. The bond head 80 also has a heating mechanism for heating the "transparent substrate with frame" 35 via the collet 90. The bond head 80 also has a pressurizing mechanism for pressurizing the "transparent substrate with frame" 35 via the collet 90. The bond head 80 also has a load detection sensor for detecting the load applied by the pressurizing mechanism. Note that these heating and pressurizing mechanisms may be known mechanisms, and the load detection sensor may also be a known sensor.

[0037] The heating mechanism of the stage 70 and the heating mechanism of the bond head 80 may be automatically controlled by a control device (not shown) or manually controlled by an operator, for example, to reach a predetermined temperature. The pressurizing mechanism of the bond head 80 may be automatically controlled by a control device (not shown) or manually controlled by an operator, for example, to reach a predetermined pressure based on the pressure detected by the load sensing sensor of the bond head 80.

[0038] In this way, as shown in Figure 5B, the "framed transparent substrate" 35 is heat-pressed onto the "solid-state image sensor" 15 mounted on the wiring board by the stage (heating mechanism) 70 or by the stage (heating mechanism) 70 and the bond head (heating mechanism) 80, and pressure is applied by the bond head (pressure mechanism) 80 via the collet (load detection sensor) 90.

[0039] <<Colette>> Here, as shown in Figures 6A to 6B, in this embodiment, the collet 90 has a flat plate portion 91 and a rib portion 92. The rib portion 92 is routed along one main surface of the flat plate portion 91 and attracts the "transparent substrate with frame" 35. Thus, the collet 90 has a hollow structure on one main surface side, surrounded by the flat plate portion 91 and the rib portion 92. The thickness T of the flat plate portion 91, the height H of the rib portion 92, and the width W are as follows. The thickness T of the flat plate portion 91 is 0.5 mm or more and 10 mm or less, preferably 2 mm or more and 5 mm or less. The height H of the rib portion 92 is 0.1 mm or more and 0.5 mm or less, preferably 0.2 mm or more and 0.4 mm or less. The width W of the rib portion 92 is 0.15 μm or more and 0.8 μm or less, preferably 0.2 μm or more and 0.5 μm or less. Furthermore, the collet 90 does not necessarily have to have a rib portion 92; in other words, it may consist only of a flat plate portion 91.

[0040] Preferably, the rib portion 92 is positioned so as to overlap with the frame 40 via the transparent substrate 30 of the "framed transparent substrate" 35.

[0041] The collet 90, that is, the entirety of the flat portion 91 and the rib portion 92, is made of a rubbery material, and the elastic modulus of the collet 90 is 100 MPa or less, preferably 80 MPa or less, and more preferably 30 MPa or less.

[0042] The Shore A values ​​for the entire collet 90, i.e., the flat portion 91 and the rib portion 92, are preferably 80 or less, more preferably 70 or less.

[0043] Examples of such rubbery materials include silicone resins, fluororesins, and nitrile resins.

[0044] Next, as shown in Figures 5C and 5D, the large-format wiring board 20Z is divided into individual pieces along the cut line CL. As shown in Figure 5E, resin is potted onto the wiring 22, such as bonding wires, and the wiring 22 is covered with potting resin 60. Conductive members 24, such as solder balls, are then bonded to the back side of the wiring board 20 in combination. This yields the solid-state imaging device 1 shown in Figure 2.

[0045] Note that the order of the combination process and the individualization process may be reversed. For example, after individualizing multiple "solid-state image sensors mounted on wiring boards" 15, each of the "solid-state image sensors mounted on wiring boards" 15 may be combined with each of the "transparent substrates with frames" 35 to obtain the solid-state imaging device 1 shown in Figure 2.

[0046] Here, as shown in Figure 4A, in the GoC type solid-state imaging device 1, when the solid-state image sensor 10 is bonded to the large-format wiring board 20Z, the thickness of the adhesive 50 becomes uneven, which can cause the solid-state image sensor 10 to tilt. Also, as shown in Figures 3A to 3D, for example, when the resin composition is patterned to form the frame 40, a frame with a high height / width aspect ratio is obtained, but the frame 40 is difficult to deform.

[0047] Figure 8 is a schematic diagram showing the process of combining a "solid-state image sensor mounted on a wiring board" and a "transparent substrate with a frame" in the manufacturing method of a comparative example solid-state imaging device, corresponding to the thermocompression bonding process in Figure 5B. This comparative example differs from the manufacturing method of the embodiment described above in that it uses a collet 90X made of a relatively deformation-resistant material (metal, resin, etc.) instead of a collet 90 made of a rubbery material.

[0048] Therefore, as shown in Figure 8, if the solid-state image sensor 10 is tilted, when the framed transparent substrate 35 is heat-pressed onto the solid-state image sensor 15 mounted on the wiring board, the load on the part of the frame 40 located on the side where the height of the solid-state image sensor 10 is higher (the part enclosed by the dashed line in Figure 8) will increase, raising concerns that the reliability of the solid-state imaging device 1 (reflow resistance, heat cycle resistance, etc.) will decrease.

[0049] In this regard, according to the manufacturing method of the solid-state imaging device of this embodiment, as shown in Figure 5B, the entire collet 90, i.e., the flat plate portion 91 and the rib portion 92, is made of a rubbery material, and the elastic modulus of the entire collet 90, i.e., the flat plate portion 91 and the rib portion 92, is 100 MPa or less. This makes it possible to improve the ability of the framed transparent substrate 35 to follow the tilt of the solid-state imaging device 10 when the framed transparent substrate 35 is heat-pressed onto the solid-state imaging device 15 mounted on the wiring board. That is, the collet 90 deforms in accordance with the tilt of the solid-state imaging device 10 (the portion enclosed by the dashed line in Figure 5B), and the framed transparent substrate 35 can be tilted. As a result, it is possible to suppress the load on the portion of the frame 40 located on the side where the height of the solid-state imaging device 10 is higher, and it is possible to suppress a decrease in the reliability of the solid-state imaging device 1 (reflow resistance, heat cycle resistance, etc.).

[0050] Furthermore, according to the manufacturing method of the solid-state imaging device of this embodiment, it is preferable that the Shore A values ​​of all parts of the collet 90, i.e., the flat plate portion 91 and the rib portion 92, be 80 or less. This makes it possible to improve the ability of the framed transparent substrate 35 to follow the tilt of the solid-state imaging sensor 10 when the framed transparent substrate 35 is heat-pressed onto the solid-state imaging sensor 10 15 mounted on the wiring board 20.

[0051] Furthermore, according to the inventors' findings, if the Shore A value of the collet 90 exceeds 80 (i.e., it is a hard material), the framed transparent substrate 35's ability to follow the tilt of the solid-state image sensor 10 is poor. On the other hand, if the Shore A value of the collet 90 is less than 40 (i.e., it is a soft material), there are problems with heat resistance.

[0052] Furthermore, according to the manufacturing method of the solid-state imaging device of this embodiment, it is preferable that the entire material of the collet 90, i.e., the flat plate portion 91 and the rib portion 92, is made of silicone resin or fluororesin. Silicone resin or fluororesin has relatively high heat resistance. This allows the bond head 80 to heat the "framed transparent substrate" 35 when heat-pressing the "solid-state imaging sensor" 15 mounted on the wiring board.

[0053] Furthermore, according to the manufacturing method of the solid-state imaging device of this embodiment, it is preferable that the thickness of the collet 90 (for example, the thickness of the flat plate portion 91) is 5 mm or less. This ensures high heat transfer when the bond head 80 heats the "framed transparent substrate" 35 when it is thermocompressed onto the "solid-state image sensor" 15 mounted on the wiring board.

[0054] Furthermore, according to the inventors' findings, if the thickness of the collet 90 (for example, the thickness of the flat portion 91) exceeds 5 mm, the heat transfer performance of the collet 90 decreases when heated by the bond head 80, and the bonding performance between the "solid-state image sensor mounted on the wiring board" 15 and the "transparent substrate with frame" 35 decreases. On the other hand, if the thickness of the collet 90 (for example, the thickness of the flat portion 91) is less than 0.5 mm, there is a problem with the ability of the "transparent substrate with frame" 35 to follow the tilt of the solid-state image sensor 10.

[0055] Furthermore, according to the manufacturing method of the solid-state imaging device of this embodiment, the collet 90 has a hollow structure surrounded by a flat portion 91 and a rib portion 92. As a result, since only the rib portion 92 is the part that adsorbs the "transparent substrate with frame" 35, the adhesion of foreign matter to the "transparent substrate with frame" 35 can be reduced. In addition, the release properties of the collet 90 from the transparent substrate after heat-press bonding can be improved, thereby improving the overall bonding performance.

[0056] (modified version) In the embodiments described above, a configuration was described in which a collet 90 in which the entire flat plate portion 91 and rib portion 92 are made of rubber material is used in the heat-sealing process shown in Figures 5A to 5B. In this modified example, a configuration is described in which a collet in which only a part is made of rubber material is used in the heat-sealing process.

[0057] Figure 7A is a schematic cross-sectional view of a collet used in the manufacturing method of a solid-state imaging device according to a modified example of this embodiment, and is a cross-sectional view corresponding to Figure 6A. Figure 7B is a schematic diagram showing the thermocompression bonding process corresponding to Figure 5B, which is the process of combining a "solid-state image sensor mounted on a wiring board" and a "transparent substrate with a frame" in the manufacturing method of a solid-state imaging device according to a modified example of this embodiment.

[0058] As shown in Figure 7A, the modified collet 90A includes a buffer layer 93 in addition to the flat plate portion 91 and rib portion 92 described above. The buffer layer 93 is a flat buffer sheet placed on the other main surface of the flat plate portion 91. The thickness T of the buffer layer 93 is 0.5 mm or more and 5.0 mm or less. The flat plate portion 91 and the rib portion 92 may be made of the rubber material described above, or they may be made of a relatively deformation-resistant material such as metal or resin.

[0059] At least a portion of the buffer layer 93 of the collet 90 contains a rubbery material, and the elastic modulus of at least a portion of the buffer layer 93 of the collet 90 is 100 MPa or less, preferably 80 MPa or less, and more preferably 30 MPa or less.

[0060] The Shore A value of at least a portion of the buffer layer 93 of the collet 90 is preferably 80 or less, more preferably 70 or less.

[0061] Examples of such rubbery materials include silicone resins, fluororesins, and nitrile resins.

[0062] This modified manufacturing method also offers the same advantages as the manufacturing method of the embodiment described above. As shown in Figure 7B, when the "framed transparent substrate" 35 is thermocompressed onto the "solid-state image sensor" 15 mounted on the wiring board, the ability of the "framed transparent substrate" 35 to follow the tilt of the solid-state image sensor 10 can be improved. That is, in accordance with the tilt of the solid-state image sensor 10, at least the buffer layer 93 of the collet 90 deforms (the part enclosed by the dashed line in Figure 7B), allowing the "framed transparent substrate" 35 to tilt. As a result, it is possible to suppress the increase in load on the part of the frame 40 located on the side where the height of the solid-state image sensor 10 is higher, and to suppress a decrease in the reliability of the solid-state imaging device 1 (reflow resistance, heat cycle resistance, etc.).

[0063] Although embodiments of the present invention have been described above, the present invention is not limited to the embodiments described above, and various modifications and variations are possible. For example, the embodiments described above illustrate a so-called GoC (Glass on Chip) type solid-state imaging device (Figure 2). However, the features of the present invention are not limited to this, and it is applicable to various types of solid-state imaging devices. [Examples]

[0064] The present invention will be described in detail below based on examples, but the present invention is not limited to the following examples.

[0065] First, in each of the examples and comparative examples, a "transparent substrate with a frame" 35 and a "solid-state image sensor mounted on a wiring board" 15 were prepared.

[0066] (Transparent substrate with frame) <Solution A containing resin A> 40 g of diallyl isocyanuric acid and 29 g of diallyl monomethyl isocyanuric acid were dissolved in 264 g of dioxane to obtain a solution. Next, 143 μL of xylene solution of platinum vinylsiloxane complex (platinum vinylsiloxane complex containing 3% by mass of platinum, manufactured by Yumicore Precious Metals Japan, Pt-VTSC-3X) was added to the solution to obtain solution 1.

[0067] Furthermore, solution 2 was obtained by dissolving 88 g of 1,3,5,7-tetrahydrogen-1,3,5,7-tetramethylcyclotetrasiloxane in 176 g of toluene. Then, under a nitrogen atmosphere (containing 3% oxygen), solution 2 was heated to 105°C, and solution 1 was added dropwise to solution 2 over 3 hours. After the end of the dropwise addition, the state was maintained for 30 minutes to obtain solution 3. The reaction rate of the alkenyl groups of the compounds contained in solution 3 was measured by 1H-NMR, and the reaction rate was found to be 95% or higher.

[0068] Furthermore, solution 4 was obtained by dissolving 62 g of 1-vinyl-3,4-epoxycyclohexane in 62 g of toluene. Then, under a nitrogen atmosphere (containing 3% oxygen), solution 3 was heated to 105°C, and solution 4 was added dropwise to solution 3 over 1 hour. After the end of the dropwise addition, the state was maintained for 30 minutes to obtain solution 5. After confirming that the reaction rate of the alkenyl groups of the compounds contained in solution 5 was 95% or more, solution 5 was cooled to terminate the reaction.

[0069] Next, the solvents (toluene and dioxane) were removed from solution 5 under reduced pressure to obtain a solid. Propylene glycol 1-monomethyl ether 2-acetate was added to the solid to obtain solution A containing 70% by mass of resin A.

[0070] <Other materials> In addition to solution A, the following materials were prepared as materials for the curable composition. • Radical generator (2,2-dimethoxy-2-phenylacetophenone) (Omnirad651, IGM Resins BV) • Trifunctional acrylic compound (tris-(2-acryloxyethyl)isocyanurate) (A-9300, Shin-Nakamura Chemical Co., Ltd.) • Coloring agent (carbon black MA100, manufactured by Mitsubishi Chemical Corporation)

[0071] <Curable composition> A curable composition was prepared by mixing 100g of solution A, 0.07g of Omnirad651, 35g of A-9300, and 0.175g of carbon black MA100.

[0072] Next, as shown in Figure 3A, the above-mentioned curable composition was applied to the surface of a large glass substrate 30Z measuring 125 mm × 125 mm × 0.5 mm using a spin coater to form a coating film 40Z on the large glass substrate 30Z, thereby obtaining the first laminate 35A. Next, the first laminate 35A was heated on a hot plate heated to 125°C for 10 minutes to obtain a large glass substrate 30Z on which a thin film 40Z with a thickness of 40 μm was formed.

[0073] Next, as shown in Figure 3B, using an exposure apparatus (manual exposure machine, manufactured by Dainippon Kaken) (lamp: high-pressure mercury lamp), a portion 40 of the coating film 40Z of the heated first laminate 35A was exposed by soft contact exposure through a photomask M on which a grid-like line pattern M1 was formed, using the optimal integrated light intensity. Then, the exposed first laminate 35A was heated for 10 minutes on a hot plate heated to 95°C. As a result, the exposed portion 40 of the coating film 40Z became semi-cured.

[0074] Next, the first laminate 35A, which had been left standing for 1 minute, was immersed in an alkaline developer (alkaline component: TMAH, TMAH content: 2.38% by mass) for 60 seconds. After that, the first laminate 35A that had been immersed in the alkaline developer was washed with water for 30 seconds. Next, the moisture on the surface of the washed first laminate 35A was removed with compressed air. As a result, as shown in Figures 3C and 3D, the thin film 40Z on the large glass substrate 30Z was patterned, and a frame 40 (rib material), which is a semi-cured frame-shaped (square cylindrical) wall, was provided on the large glass substrate 30Z, which was obtained as the second laminate 35B.

[0075] Next, a dicing film was temporarily bonded to the side of the second laminate 35B that did not have a frame 40. Then, the large glass substrate 30Z was cut with a dicing blade along the cut line CL between the frames 40 to a size of 9 mm x 6 mm, and the dicing film was peeled off to obtain the individual "framed transparent substrate" 35 (frame height 40 μm, width 150 μm) shown in Figure 3E.

[0076] (Solid-state image sensor mounted on a wiring board) Furthermore, as shown in Figures 4A and 4B, multiple solid-state image sensors 10 were bonded to a large-format wiring board 20Z via adhesive 50, and the multiple solid-state image sensors 10 and the large-format wiring board 20Z were connected by bonding wires 22, thereby obtaining multiple "solid-state image sensors mounted on a wiring board" 15. At this time, due to the uneven thickness of the adhesive 50 during application, each of the solid-state image sensors 10 was tilted randomly.

[0077] (Example 1) Next, as shown in Figure 5A, multiple "solid-state image sensors mounted on wiring boards" 15 were mounted on the stage 70. Then, using a bonding machine (Athlete FA Co., Ltd. "CB-505"), each "transparent substrate with frame" 35 was repeatedly stacked one by one onto each of the "solid-state image sensors mounted on wiring boards" 15. Specifically, a collet 90 was placed on the upper bond head 80, and then the "transparent substrate with frame" 35 was positioned so that the side without the frame 40 was in contact with the collet 90.

[0078] Details of the Colette 90 are as follows (Figures 6A-6B, Tables 1-3). Hollow structure having a flat plate portion 91 and a rib portion 92 Thickness T of flat plate section 91: 0.5 mm Rib section 92 height H: 0.3 mm Rib section width W: 0.5mm Collet 90 (all of the flat portion 91 and rib portion 92): Silicone resin (rubber material) Modulus of elasticity of collet 90 (all of the flat plate portion 91 and rib portion 92): 8.5 MPa Shore A value of collet 90 (all of the flat plate section 91 and rib section 92): 70

[0079] Subsequently, as shown in Figure 5B, the bond head 80 and stage 70 were heated to 100°C, and the bond head 80 was brought close to the "solid-state image sensor mounted on the wiring board" 15. When the load detection sensor attached to the bond head 80 indicated 5N, a 10-second wait was performed to release the suction of the "transparent substrate with frame" 35 by the collet 90.

[0080] Next, as shown in Figures 5C and 5D, the large-format wiring board 20Z was divided into individual pieces along the cut line CL. As shown in Figure 5E, resin was potted onto the wiring 22, such as bonding wires, and the wiring 22, such as bonding wires, was covered with potting resin 60. Conductive members 24, such as solder balls, were then bonded to the back side of the wiring board 20 in combination. This resulted in the solid-state imaging device 1 of Example 1, in which a "transparent substrate with a frame" 35 was bonded to a "solid-state image sensor" 15 mounted on a wiring board, as shown in Figures 1 and 2.

[0081] (Examples 2-5) The procedure was carried out in the same manner as in Example 1, except that when bonding the "framed transparent substrate" 35 to the "solid-state image sensor mounted on a wiring board" 15, a collet 90 (Figures 6A to 6B, Tables 1 to 3) was used that differed from the collet 90 of Example 1 in the following respects. Example 2 Thickness of flat section 91: T: 2mm Example 3 Thickness of flat section 91: T: 3mm Example 4 Thickness of flat section 91: T: 5mm Example 5 Thickness of flat section 91: T: 10mm

[0082] (Examples 6-10) The procedure was carried out in the same manner as in Example 2, except that when bonding the "framed transparent substrate" 35 to the "solid-state image sensor mounted on a wiring board" 15, a collet 90 (Figures 6A to 6B, Tables 1 to 3) that differed from the collet 90 in Example 2 in the following respects was used. Example 6 Modulus of elasticity of collet 90 (all of the flat plate portion 91 and rib portion 92): 30 MPa Shore A value for collet 90 (all of the flat plate section 91 and rib section 92): 90 Example 7 Modulus of elasticity of collet 90 (all of the flat plate portion 91 and rib portion 92): 80 MPa Shore A value of Colette 90 (all of the flat plate section 91 and rib section 92): exceeds 90 Example 8 Modulus of elasticity of collet 90 (all of the flat plate portion 91 and rib portion 92): 6.5 MPa Shore A value of collet 90 (all of the flat plate section 91 and rib section 92): 70 Example 9 Modulus of elasticity of collet 90 (all of the flat plate portion 91 and rib portion 92): 5.0 MPa Shore A value of collet 90 (all of the flat plate section 91 and rib section 92): 60 Example 10 Modulus of elasticity of collet 90 (all of the flat plate portion 91 and rib portion 92): 4.4 MPa Shore A value of collet 90 (all of the flat plate section 91 and rib section 92): 50

[0083] (Examples 11-12) The procedure was carried out in the same manner as in Example 2, except that when bonding the "framed transparent substrate" 35 to the "solid-state image sensor mounted on a wiring board" 15, a collet 90 (Figures 6A to 6B, Tables 1 to 3) that differed from the collet 90 in Example 2 in the following respects was used. Example 11 Collet 90 (all of the flat portion 91 and rib portion 92): Fluororesin (rubber material) Modulus of elasticity of collet 90 (all of the flat plate portion 91 and rib portion 92): 7.8 MPa Shore A value of collet 90 (all of the flat plate section 91 and rib section 92): 70 Example 12 Collet 90 (all of the flat portion 91 and rib portion 92): Nitrile resin (rubber material) Modulus of elasticity of collet 90 (all of the flat plate portion 91 and rib portion 92): 10.2 MPa Shore A value of collet 90 (all of the flat plate section 91 and rib section 92): 70

[0084] (Example 13) The procedure was carried out in the same manner as in Example 2, except that when bonding the "framed transparent substrate" 35 to the "solid-state image sensor mounted on a wiring board" 15, a collet 90A (Figure 7A, Tables 1-3) was used, which differs from the collet 90 of Example 2 in the following respects. Flat portion 91 and rib portion 92 (entire): Ceramic Modulus of elasticity of the flat plate portion 91 and the rib portion 92 (entire): 38 GPa Shore A value for flat plate section 91 and rib section 92 (all): exceeds 90 A hollow structure having a flat plate portion 91, a rib portion 92, and a buffer layer 93. Buffer layer 93 thickness T: 2mm Buffer layer 93 (entire): Silicone resin (rubber-like material) Modulus of elasticity of buffer layer 93 (entire layer): 8.5 MPa Shore A value for buffer layer 93 (all): 70

[0085] (Example 14) The procedure was carried out in the same manner as in Example 2, except that when bonding the "framed transparent substrate" 35 to the "solid-state image sensor mounted on a wiring board" 15, a collet 90 (Figures 6A to 6B, Tables 1 to 3) that differed from the collet 90 in Example 2 in the following respects was used. A flat plate structure that does not have a rib portion 92 and is composed only of a flat plate portion 91.

[0086] (Comparative Example 1) The procedure was carried out in the same manner as in Example 2, except that when bonding the "framed transparent substrate" 35 to the "solid-state image sensor mounted on a wiring board" 15, a collet 90X (Figure 8, Tables 1-3) was used, which differs from the collet 90 in Example 2 in the following respects. Collet 90X (all of the flat portion 91 and rib portion 92): Ceramic Modulus of elasticity of collet 90X (all of the flat plate portion 91 and rib portion 92): 38 GPa Shore A value of Colette 90X (all of the flat plate section 91 and rib section 92): exceeds 90

[0087] (Comparative Example 2) The procedure was carried out in the same manner as in Example 2, except that when bonding the "framed transparent substrate" 35 to the "solid-state image sensor mounted on a wiring board" 15, a collet 90X (Figure 8, Tables 1-3) was used, which differs from the collet 90 in Example 2 in the following respects. Collet 90X (all of the flat portion 91 and rib portion 92): Stainless steel Modulus of elasticity of collet 90X (all of the flat plate portion 91 and rib portion 92): 205 GPa Shore A value of Colette 90X (all of the flat plate section 91 and rib section 92): exceeds 90

[0088] (evaluation) This section explains the evaluation methods for each evaluation item.

[0089] <Bonding yield> The bonding yield was calculated using the following formula by observing the number of pieces in which no delamination was observed on the frame 40 (number of good bonded pieces) using an optical microscope from the glass substrate 30 side of the solid-state imaging device after bonding 10 pieces together. (Number of good bonded products) / (Total number of bonded products) × 100 = Bonding yield (%)

[0090] <Vitality> The reliability evaluation was conducted as follows: Using a heat shock test apparatus ("Cosmopia® S" manufactured by Hitachi Johnson Controls Air Conditioning Co., Ltd.), the solid-state imaging device under evaluation was subjected to a cycle of holding it in a -50°C atmosphere for 30 minutes, followed by holding it in a 125°C atmosphere for 30 minutes. This cycle was repeated 500 times. Next, the solid-state imaging device was observed from the glass substrate 30 side using an optical microscope, and the number of cracks in the frame 40 and the number of delaminations in the frame 40 were counted. The reliability was then determined according to the following criteria.

[0091] <Reliability Criteria> A: If cracks or delamination occur in two or more of the three pieces. B: If cracks or delamination occur in one out of three pieces. C: If no cracks or delamination occurred in any of the three pieces.

[0092] <Foreign object> Observation was performed using an optical microscope from the glass substrate 30 side of the solid-state imaging device. The evaluation criteria are as follows. ○: No foreign matter larger than 100 μm was attached to the glass substrate 30. Alternatively, foreign matter smaller than 100 μm was attached. ×: Foreign matter larger than 100 μm was found attached to the glass substrate.

[0093] The evaluation results for each evaluation item are shown in Tables 1 to 3 below. [Table 1]

[0094] [Table 2]

[0095] [Table 3]

[0096] From the results of Comparative Example 3 and Example 2, when the shape of the collet 90 was not hollow, the evaluation of foreign matter was negative. This is because the collet 90 came into contact with the entire surface of the glass substrate 30, causing any foreign matter adhering to the collet 90 to be transferred.

[0097] The results from Examples 1-5 showed that the bondability decreased slightly when the collet 90 thickness was 5 mm, and reliability also decreased when it was 10 mm thick. This is thought to be because the heat conduction deteriorates as the thickness of the collet 90 increases.

[0098] The results from Comparative Examples 1-2, Example 2, and Example 6-10 showed that when the collet 90 had a high modulus of elasticity, the bonding performance decreased. This is because, when bonding the solid-state image sensor 10 to the wiring board 20, the thickness of the adhesive 50 became uneven, causing the solid-state image sensor 10 to tilt, and the collet 90 was unable to follow this tilt.

[0099] The results from Examples 2 and 11-12 showed that bonding performance decreased when fluorine and nitrile collets were used. This is thought to be because fluorine and nitrile collets have low heat resistance, causing them to harden during bonding, resulting in an increase in elastic modulus and a change in shape.

[0100] The results from Examples 2 and 13 show that the bonding properties improved when the buffer layer 93 was inserted into the collet 90A. This is because the insertion of the buffer layer 93 allows the solid-state image sensor 10 to follow the tilt regardless of the elastic modulus of the rib portion 92 in contact with the transparent substrate. [Explanation of symbols]

[0101] 1. Solid-state imaging device 10 Solid-state image sensor 12 Imaging area 15. Solid-state image sensor mounted on a wiring board 20 Wiring boards 20Z Large Format Wiring Board 22 Wiring 24 Conductive member 30 Transparent substrates 30Z Large Format Transparent Substrate 35 Transparent substrate with frame 35A First Laminate 35B Second Laminate 40 frames (exposed portion) Thin film of 40Z resin composition 50 Adhesives 60 resin 70 stages (heating mechanism) 80 Bond head (heating mechanism, pressurizing mechanism, load detection sensor) 90, 90A, 90X Collets 91 Flat plate part 92 Rib section 93 Buffer layer

Claims

1. A method for manufacturing a solid-state imaging device comprising a solid-state image sensor, a wiring board on which the solid-state image sensor is mounted, a transparent substrate arranged opposite to the solid-state image sensor, and a frame arranged between the solid-state image sensor and the transparent substrate so as to surround the imaging area of ​​the solid-state image sensor, The process of attaching the solid-state image sensor to the wiring board via an adhesive to obtain a "solid-state image sensor mounted on a wiring board," The process of forming the frame on the transparent substrate to obtain a "transparent substrate with frame", The process of thermally pressing the "transparent substrate with frame" onto the "solid-state image sensor mounted on the wiring board," Includes, In the aforementioned heat-pressing process, The aforementioned "solid-state image sensor mounted on a wiring board" is mounted on the stage, The bond head uses a collet to pick up the "transparent substrate with frame" and mount it onto the "solid-state image sensor mounted on the wiring board," The stage or the stage and the bond head heats the substrate, and the bond head pressurizes the substrate through the collet, thereby thermocompressing the "framed transparent substrate" to the "solid-state image sensor mounted on the wiring board" to obtain the solid-state imaging device. At least a portion of the collet contains a rubbery material, The elastic modulus of at least a portion of the collet is 100 MPa or less. A method for manufacturing a solid-state imaging device.

2. The method for manufacturing a solid-state imaging apparatus according to claim 1, wherein the Shore A value of at least a portion of the collet is 80 or less.

3. The method for manufacturing a solid-state imaging apparatus according to claim 1, wherein at least a portion of the material of the collet includes a silicone resin or a fluororesin.

4. The method for manufacturing a solid-state imaging apparatus according to claim 1, wherein the thickness of at least a portion of the collet is 5 mm or less.

5. The aforementioned collet is It has a flat plate portion and a rib portion that encircles one main surface of the flat plate portion and adsorbs the "transparent substrate with frame", It has a hollow structure surrounded by the flat plate portion and the rib portion, The entirety of the flat plate portion and the rib portion of the collet contains a rubbery material. A method for manufacturing a solid-state imaging apparatus according to claim 1.

6. The aforementioned collet is It has a flat plate portion, a rib portion that encircles one main surface of the flat plate portion and adsorbs the "transparent substrate with frame", and a flat plate-shaped buffer layer disposed on the other main surface of the flat plate portion. It has a hollow structure surrounded by the flat plate portion and the rib portion, At least the buffer layer of the collet includes a rubbery material. A method for manufacturing a solid-state imaging apparatus according to claim 1.

7. The method for manufacturing a solid-state imaging apparatus according to claim 5 or 6, wherein the rib portion of the collet is positioned to overlap with the frame.

8. A solid-state imaging device manufactured by the method for manufacturing a solid-state imaging device described in any one of claims 1 to 6.

9. Solid-state image sensor, A wiring board on which the aforementioned solid-state image sensor is mounted, A transparent substrate is arranged to face the solid-state image sensor, A frame is disposed between the solid-state image sensor and the transparent substrate so as to surround the imaging area of ​​the solid-state image sensor, Equipped with, The solid-state image sensor is bonded to the wiring board via an adhesive. Let ΔT1 be the difference between the heights of one end and the other end of the solid-state image sensor, ΔT2 be the difference between the heights of one end and the other end of the wiring board, and ΔT3 be the difference between the heights of one end and the other end of the transparent substrate. Then the absolute value of (ΔT3 - ΔT1) is smaller than the absolute value of (ΔT3 - ΔT2). Solid-state imaging device.

10. Solid-state image sensor, A wiring board on which the aforementioned solid-state image sensor is mounted, A transparent substrate is arranged to face the solid-state image sensor, A frame is disposed between the solid-state image sensor and the transparent substrate so as to surround the imaging area of ​​the solid-state image sensor, Equipped with, The solid-state image sensor is bonded to the wiring board via an adhesive. Let ΔT1 be the difference between the height of one end of the solid-state image sensor and the height of the other end. Let ΔT4 be the difference between the height of one end of the solid-state image sensor and the height of the other end of the solid-state image sensor in two opposing parts of the frame. Then, if ΔT4 < ΔT1, Solid-state imaging device.

Images