Solid-state imaging device

Abstract

To provide a solid-state imaging device that reduces optical noise. [Solution] The solid-state imaging device 1 comprises a solid-state image sensor 10, a transparent substrate 30 positioned opposite the solid-state image sensor 10, and a frame 40 positioned between the solid-state image sensor 10 and the transparent substrate 30 so as to surround the imaging area 12 of the solid-state image sensor 10. The distance D1 between the end face of the solid-state image sensor 10 and the imaging area 12 of the solid-state image sensor 10 is 650 μm or less, and the distance D2 between the end face of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10 is 375 μm or more.

Description

[Technical Field]

[0001] The present invention relates to a solid-state imaging device. [Background Art]

[0002] A solid-state imaging device, which is an image sensor such as a CMOS sensor or a CCD sensor, is known. Such a solid-state imaging device includes, for example, a solid-state imaging element (semiconductor chip), a transparent substrate disposed to face the solid-state imaging element, and a frame disposed between the solid-state imaging element and the transparent substrate so as to surround an imaging region of the solid-state imaging element, and has a hollow structure in which the imaging region of the solid-state imaging element is sealed by the transparent substrate and the frame (see, for example, Patent Document 1). [Prior Art Documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Unexamined Patent Publication No. 2014-216475 [Summary of the Invention] [Problem to be Solved by the Invention]

[0004] In such a solid-state imaging device having a hollow structure, when strong light is incident, reflected light (stray light) from, for example, the surface of the frame increases, and as a result, optical noise such as flare or ghost generated in a captured image increases.

[0005] Conventionally, liquid adhesive has been used as a frame for solid-state imaging devices. Liquid adhesives contain fillers and the like to obtain thixotropy, and constrictions occur on the side surfaces. Therefore, a frame made of liquid adhesive has a relatively high reflectance on the inner side surface. As a result, the amount of reflected light (stray light) on the inner side surface of the frame that is incident on the imaging region of the solid-state imaging element increases, and consequently, optical noise such as flare or ghost derived from the frame that occurs in a captured image increases.

[0006] Furthermore, liquid adhesives can cause wetting and spreading. Therefore, in frames constructed with liquid adhesives, it is necessary to enlarge the frame area outside the imaging area of ​​the solid-state image sensor and the frame area outside the imaging area of ​​the transparent substrate. As a result, the solid-state image sensor and transparent substrate become larger, leading to a larger and more expensive solid-state imaging device.

[0007] In this regard, the inventors of the present invention devise using a resin composition as the frame. A frame made of a resin composition has lower reflectivity on its inner surface compared to a frame made of a liquid adhesive. As a result, the solid-state imaging device of the comparative example can reduce reflected light (stray light) from the inner surface of the frame that is incident on the imaging area of ​​the solid-state image sensor, compared to a conventional solid-state imaging device. Consequently, optical noise such as frame-derived flare or ghosting that occurs in the captured image can be reduced.

[0008] Furthermore, since resin compositions are manufactured, for example, by lithography, they have high dimensional accuracy, and because they are semi-cured resins, there is no need to consider wetting and spreading. Therefore, compared to frames made of liquid adhesives, frames made of resin compositions can reduce the frame area outside the imaging area of ​​the solid-state image sensor and the frame area outside the imaging area of ​​the transparent substrate. As a result, the solid-state image sensor and the transparent substrate can be miniaturized, and the solid-state imaging device can be made smaller and less expensive.

[0009] However, when a solid-state imaging device is miniaturized, especially when the transparent substrate is miniaturized, the distance from the edge of the transparent substrate to the imaging area of ​​the solid-state image sensor decreases. As a result, the amount of reflected light (stray light) from the edge of the transparent substrate that enters the imaging area of ​​the solid-state image sensor increases, and consequently, optical noise such as flare or ghosting originating from the transparent substrate edge that occurs in the captured image increases.

[0010] The present invention aims to provide a solid-state imaging device that reduces optical noise. [Means for solving the problem]

[0011] The solid-state imaging device according to the present invention comprises a solid-state image sensor, a transparent substrate arranged opposite to the solid-state image sensor, and a frame arranged between the solid-state image sensor and the transparent substrate so as to surround the imaging area of ​​the solid-state image sensor. The distance between the end face of the solid-state image sensor and the imaging area of ​​the solid-state image sensor is 650 μm or less, and the distance between the end face of the transparent substrate and the imaging area of ​​the solid-state image sensor is 375 μm or more. [Effects of the Invention]

[0012] According to the present invention, optical noise such as flare or ghosting that occurs in captured images can be reduced in a solid-state imaging device. [Brief explanation of the drawing]

[0013] [Figure 1] This is a schematic diagram showing a solid-state imaging device according to the first embodiment, viewed from the light-receiving surface side. [Figure 2] This is a schematic cross-sectional view of a solid-state imaging device according to the first embodiment, and is a cross-sectional view taken along line II-II shown in Figure 1. [Figure 3A] This is a schematic diagram showing the process of obtaining a "framed transparent substrate" in the manufacturing method of a solid-state imaging device according to the first embodiment. [Figure 3B] This is a schematic diagram showing the process of obtaining a "framed transparent substrate" in the manufacturing method of a solid-state imaging device according to the first embodiment. [Figure 3C] This is a schematic diagram showing the process of obtaining a "framed transparent substrate" in the manufacturing method of a solid-state imaging device according to the first embodiment. [Figure 3D] This is a schematic diagram showing the process of obtaining a "framed transparent substrate" in the manufacturing method of a solid-state imaging device according to the first embodiment. [Figure 3E] This is a schematic diagram showing the process of obtaining a "framed transparent substrate" in the manufacturing method of a solid-state imaging device according to the first embodiment. [Figure 3F]It is a schematic diagram showing the step of obtaining "solid-state imaging device mounted on a wiring substrate" and the step of combining "solid-state imaging device mounted on a wiring substrate" and "transparent substrate with a frame" in the method for manufacturing a solid-state imaging device according to the first embodiment. [Figure 4] It is a schematic cross-sectional view of a solid-state imaging device according to Modification 1 of the first embodiment. [Figure 5] It is a schematic cross-sectional view of a solid-state imaging device according to Modification 2 of the first embodiment. [Figure 6] It is a schematic cross-sectional view of a solid-state imaging device according to the second embodiment. [Figure 7] It is a schematic diagram showing a method for manufacturing a solid-state imaging device according to the second embodiment. [Figure 8] It is a schematic cross-sectional view of a conventional solid-state imaging device. [Figure 9] It is a schematic cross-sectional view of a solid-state imaging device of a comparative example. MODE FOR CARRYING OUT THE INVENTION

[0014] Hereinafter, an example of an embodiment of the present invention will be described with reference to the accompanying drawings. In each drawing, the same or corresponding parts are denoted by the same reference numerals. For convenience, hatching, member reference numerals, and the like may be omitted; in such cases, reference shall be made to other drawings.

[0015] [First Embodiment] (Solid-state Imaging Device) Fig. 1 is a schematic diagram showing the solid-state imaging device according to the first embodiment viewed from the light-receiving surface side, and Fig. 2 is a schematic cross-sectional view of the solid-state imaging device according to the first embodiment, which is a cross-sectional view taken along line II-II shown in Fig. 1. The solid-state imaging device 1 shown in Figs. 1 and 2 is an image sensor such as a CMOS sensor or a CCD sensor, and is a so-called GoC (Glass on Chip) type solid-state imaging device. The solid-state imaging device 1 includes a solid-state image sensor 10, a wiring substrate 20, a transparent substrate 30, and a frame (rib material) 40.

[0016] <Solid-state Image Sensor> The solid-state image sensor 10 is a semiconductor chip of an image sensor such as a CMOS sensor or a CCD sensor. The semiconductor chip is made up of, for example, a silicon substrate (wafer) and has an imaging region 12 that includes a plurality of pixels arranged in two dimensions. Each pixel is made up of, for example, a photodiode. A color filter or microlens may be placed on the imaging region 12. The solid-state image sensor 10 is mounted and bonded to the wiring board 20, for example, via an adhesive.

[0017] <Wiring board> The wiring board 20 is a substrate on which wiring is formed. The wiring board 20 and the solid-state image sensor 10 are electrically connected by wiring 22, such as bonding wires. In addition, conductive members 24, such as solder balls, are electrically connected to the wiring board 20 for the transfer of signals and power between the solid-state image sensor 10 and the outside. The wiring 22 may be covered with potting resin 60.

[0018] Examples of wiring boards 20 include organic materials such as polyimide, polyester, ceramic, epoxy, bismaleimidotriazine, and phenolic resin; structures obtained by impregnating paper or glass fiber nonwoven fabric with the aforementioned organic materials and then heat-curing them; ceramics such as alumina, aluminum nitride, beryllium oxide, and silicon nitride; and metal substrates. Among these, glass epoxy substrates and ceramic substrates are preferred. Circuits having metal wiring patterns, metal bumps, metal vias, or metal film-coated through-holes can be formed on or inside these insulating substrates.

[0019] As the potting resin 60, a photocurable or thermocurable resin composition, or a photocurable and thermocurable resin composition can be used. Examples of resin compositions include curable resins such as epoxy resins, acrylic resins, or silicone resins.

[0020] <Transparent substrate> The transparent substrate 30 is positioned to face the solid-state image sensor 10, specifically, to face the main surface of the solid-state image sensor 10 on which the imaging region 12 is formed. The transparent substrate 30 can be made of glass, acrylic resin, or a transparent plastic such as polycarbonate, and glass is preferred from the viewpoint of reliability. The type of glass is not particularly limited, but examples include quartz glass, borosilicate glass, and alkali-free glass.

[0021] If necessary, coatings such as an infrared reflective film (or infrared cut filter), an anti-reflective film (AR coating), a protective film, or a reinforcing film can be formed on the surface of the transparent substrate 30. Anti-reflective films and infrared reflective films (or infrared cut filters) are particularly preferred because they reduce optical noise in the captured image. In particular, when an anti-reflective film is used as the coating, it is preferable to use several types of multilayer films selected from TiO2, Nb2O5, Ta2O5, CaF2, SiO2, Al2O3, MgS2, ZrO2, NiO, or MgF2.

[0022] These coatings can be applied to either one or both sides of the glass. When applied to both sides, the types of coatings may be the same or different. It is also possible to laminate different types of coatings with the same function on a single surface, or to laminate different types of coatings with different functions. There are no particular limitations on the number of layers, and it can be a multilayer structure of several to several tens of layers.

[0023] <frame> The frame (rib material) 40 is positioned between the solid-state image sensor 10 and the transparent substrate 30 so as to surround the imaging area 12 of the solid-state image sensor 10. The frame 40, the solid-state image sensor 10, and the transparent substrate 30 are bonded together by the adhesive strength of the frame 40 material.

[0024] Examples of frame 40 include photocurable resins such as epoxy resin, acrylic resin, or silicone resin, thermosetting resins, or photocurable and thermosetting resins.

[0025] In this way, in the solid-state imaging device 1, the imaging area 12 of the solid-state image sensor 10 is sealed by the transparent substrate 30 and the frame 40. Furthermore, the solid-state imaging device 1 has a hollow structure with space above the imaging area 12 of the solid-state image sensor 10.

[0026] The resin composition of frame 40 may contain a coloring agent. Examples of coloring agents include organic pigments, inorganic pigments, and dyes. From the viewpoint of heat resistance and colorability, pigments are preferred as coloring agents. When forming a black coloring pattern with light-shielding properties, it is preferable to use a black pigment as the coloring agent, but it is not limited to this. In addition to black, other coloring patterns such as red patterns, yellow patterns, and blue patterns can also be used depending on the application.

[0027] Pigments that absorb a wide range of wavelengths in the visible light region are preferred. Among pigments that absorb a wide range of wavelengths in the visible light region, examples of black organic pigments include anthraquinone-based black pigments, perylene-based black pigments, azo-based black pigments, and lactam-based black pigments. Among these, perylene-based black pigments and lactam-based black pigments are preferred due to their excellent light-shielding properties. Examples of black inorganic pigments include carbon black and black lower-order titanium oxynitride. Examples of other inorganic pigments include carbon black, composite metal oxide pigments, titanium dioxide, barium sulfate, lead sulfate, yellow lead, red iron oxide, ultramarine, Prussian blue, chromium oxide, antimony white, zinc sulfide, zinc, manganese purple, cobalt purple, and magnesium carbonate. Examples of dyes include azo compounds, anthraquinone compounds, perylene compounds, perinone compounds, phthalocyanine compounds, carbonium compounds, and indigoid compounds. Pigments used to obtain colored patterns other than black include chromatic pigments such as red, orange, yellow, green, blue, purple, cyanine, and magenta.

[0028] Specific examples of chromatic pigments include Color Index (CI) Pigment Yellow 1, 10, 83, etc.; CI Pigment Orange 2, 5, 13, etc.; CI Pigment Red 1, 2, 3, etc.; CI Pigment Green 7, 10, 36, etc.; and CI Pigment Blue 1, 2, 15, etc. These pigments can be used individually or in various combinations.

[0029] Conventionally, liquid adhesive has been used as the frame of a solid-state imaging device. Figure 8 is a schematic cross-sectional view of a conventional solid-state imaging device. The conventional solid-state imaging device 1X shown in Figure 8 differs from the solid-state imaging device 1 of this embodiment described above in that liquid adhesive is used as the frame 40X.

[0030] Liquid adhesives contain fillers and other materials to achieve thixotropy, and constrictions occur on the sides. As a result, the reflectivity on the inner surface of frame 40X, which is made of liquid adhesive, is relatively high. Consequently, the amount of reflected light (stray light) from the inner surface of frame 40X that enters the imaging area 12 of the solid-state image sensor 10X increases, and as a result, optical noise such as frame-derived flare or ghosting that occurs in the captured image increases.

[0031] Furthermore, liquid adhesives cause wetting and spreading (W). Therefore, in a frame 40X made of liquid adhesive, it is necessary to enlarge the frame area (D1) outside the imaging area 12 of the solid-state image sensor 10X and the frame areas (D2, D3) outside the imaging area 12 of the transparent substrate 30X. As a result, the solid-state image sensor 10X and the transparent substrate 30X become larger, and the solid-state imaging device 1X becomes larger and more expensive.

[0032] For example, the dimensions of each part of the solid-state imaging device 1X are as follows: Transparent substrate 30X, thickness T: 500 μm Frame 40X, Height H: 120μm Frame 40X, width W: 440μm The distance D1 between the end face of the solid-state image sensor 10X and the imaging area 12 of the solid-state image sensor 10X is 1000 μm. The distance D2 between the edge of the transparent substrate 30X and the imaging area 12 of the solid-state image sensor 10X is 725 μm. The distance D3 between the inner surface of frame 40X and the imaging area 12 of the solid-state image sensor 10X is 265 μm. Here, the imaging area of ​​the solid-state image sensor may or may not be located in the center of the frame, but in either case, D1, D2, and D3 refer to the shortest distances among the four sides.

[0033] In this regard, the inventors of the present invention devise using a resin composition as the frame, as shown in Figures 3A to 3D described later. Figure 9 is a schematic cross-sectional view of a comparative example solid-state imaging device. The comparative example solid-state imaging device 1Y shown in Figure 9 differs from the conventional solid-state imaging device 1X described above in that a resin composition is used as the frame 40.

[0034] The frame 40, made of a resin composition, has lower reflectivity on its inner surface compared to the frame 40X, made of a liquid adhesive. As a result, the comparative solid-state imaging device 1Y can reduce reflected light (stray light) from the inner surface of the frame 40 that is incident on the imaging area 12 of the solid-state image sensor 10, compared to the conventional solid-state imaging device 1X. Consequently, it can reduce optical noise such as frame-derived flare or ghosting that occurs in the captured image.

[0035] Furthermore, the resin composition, as shown in Figures 3A to 3D described later, is manufactured by lithography, resulting in high dimensional accuracy, and because it is a semi-cured resin, there is no need to consider wetting spread (W). Therefore, with a frame 40 made of a resin composition, the frame area (D1) outside the imaging area 12 of the solid-state image sensor 10 and the frame areas (D2, D3) outside the imaging area 12 of the transparent substrate 30Y can be reduced compared to a frame 40X made of a liquid adhesive. For example, if the thickness T of the transparent substrate 30 is about 500 μm, the distance D1 between the end face of the solid-state image sensor 10 and the imaging area 12 of the solid-state image sensor 10 can be reduced to less than 1000 μm. As a result, the solid-state image sensor 10 and the transparent substrate 30Y can be miniaturized, and the solid-state imaging device 1Y can be miniaturized and reduced in cost.

[0036] For example, the dimensions of each part of the solid-state imaging device 1Y are as follows: Transparent substrate 30Y, thickness T: 500 μm Frame 40 height H: 40μm Frame 40 width W: 150μm Distance D1 between the end face of the solid-state image sensor 10 and the imaging area 12 of the solid-state image sensor 10: 575 μm Distance D2 between the edge of the transparent substrate 30Y and the imaging area 12 of the solid-state image sensor 10: 350 μm The distance D3 between the inner surface of frame 40 and the imaging area 12 of the solid-state image sensor 10 is 175 μm. Distance (overhang) D4 between the edge of the transparent substrate 30 and the outer surface of the frame 40: 25 μm

[0037] However, when the solid-state imaging device 1Y is miniaturized, and especially when the transparent substrate 30Y is miniaturized, the distance (D2) from the edge of the transparent substrate 30Y to the imaging area 12 of the solid-state image sensor 10 decreases. As a result, the amount of reflected light (stray light) from the edge of the transparent substrate 30Y that enters the imaging area 12 of the solid-state image sensor 10 increases, and consequently, optical noise such as flare or ghosting originating from the transparent substrate edge that occurs in the captured image increases.

[0038] In this regard, as shown in Figure 2, according to the solid-state imaging device 1 of this embodiment, the distance D2 between the end face of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10 is increased to 375 μm or more. In particular, the distance D4 between the end face of the transparent substrate 30 and the outer surface of the frame 40 is increased to 50 μm or more (in other words, the width of the eaves of the transparent substrate outside the frame of the device is increased). This makes it possible to reduce reflected light (stray light) from the end face of the transparent substrate 30 that is incident on the imaging area 12 of the solid-state image sensor 10, and as a result, optical noise such as flare or ghosting originating from the transparent substrate edge that occurs in the captured image can be reduced.

[0039] For example, the dimensions of each part of the solid-state imaging device 1 are as follows: Thickness T of transparent substrate 30: 500 μm Frame 40 height H: 40μm Frame 40 width W: 150μm Distance D1 between the end face of the solid-state image sensor 10 and the imaging area 12 of the solid-state image sensor 10: 575 μm Distance D2 between the edge of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10: 525 μm The distance D3 between the inner surface of frame 40 and the imaging area 12 of the solid-state image sensor 10 is 175 μm. Distance (overhang) D4 between the edge of the transparent substrate 30 and the outer surface of the frame 40: 200 μm

[0040] (Manufacturing method for solid-state imaging devices) Next, the manufacturing method of the solid-state imaging device according to the first embodiment will be described with reference to Figures 3A to 3F. Figures 3A to 3E are schematic diagrams showing the process of obtaining a "transparent substrate with frame" in the manufacturing method of the solid-state imaging device according to this embodiment, and Figure 3F is a schematic diagram showing the process of obtaining a "solid-state image sensor mounted on a wiring board" and the process of combining the "solid-state image sensor mounted on a wiring board" and the "transparent substrate with frame" in the manufacturing method of the solid-state imaging device according to this embodiment.

[0041] <Process for obtaining a "transparent substrate with frame"> First, as shown in Figures 3A to 3E, a transparent substrate 30 with a frame 40 formed on it, i.e., a "framed transparent substrate" 35, is fabricated. For example, as shown in Figure 3A, a resin solution is applied to a large transparent substrate 30Z to form a resin film 40Z (first laminate 35A), and as shown in Figure 3B, a photomask M (line pattern M1) is used to expose a portion 40 of the resin film 40Z, and the exposed portion 40 is developed and patterned. This forms multiple frames (ribs, frame-shaped walls with a patterned resin composition) 40 on the large transparent substrate 30Z, as shown in Figures 3C and 3D (second laminate 35B). Then, the large transparent substrate 30Z is cut into individual pieces along the cut line CL. This yields multiple "framed transparent substrates" 35 with frames 40 formed on the transparent substrate 30, as shown in Figure 3E.

[0042] <Process for obtaining a "solid-state image sensor mounted on a wiring board"> Furthermore, as shown in Figure 3F, a solid-state image sensor 10 mounted on a wiring board 20, i.e., a "solid-state image sensor mounted on a wiring board" 15, is fabricated. For example, multiple solid-state image sensors 10 are bonded together on a large-format wiring board 20, and the multiple solid-state image sensors 10 and the large-format wiring board 20 are connected by wiring 22 such as bonding wires, and then the individual sensors are separated. This yields a "solid-state image sensor mounted on a wiring board" 15.

[0043] <Combination Process> Next, as shown in Figure 3F, the "solid-state image sensor mounted on the wiring board" 15 is combined with the "transparent substrate with frame" 35. For example, the "solid-state image sensor mounted on the wiring board" 15 is mounted on a stage. The "transparent substrate with frame" 35 is then attracted to the "solid-state image sensor mounted on the wiring board" 15 via a collet using a bond head and mounted on top of it.

[0044] Then, the "framed transparent substrate" 35 is heat-pressed onto the "solid-state image sensor" 15 mounted on the wiring board by a stage (heating mechanism) or by both the stage (heating mechanism) and the bond head (heating mechanism), and pressure is applied via a collet by the bond head (pressure mechanism, load detection sensor).

[0045] Next, resin is potted onto the wiring 22, such as bonding wires, and the wiring 22 is covered with potting resin 60. Conductive members 24, such as solder balls, are then bonded to the back side of the wiring board 20 in combination. This results in the solid-state imaging device 1 shown in Figure 2.

[0046] The order of the individualization process and the assembly process may be reversed. For example, multiple "framed transparent substrates" 35 may be combined with multiple solid-state image sensors 10 mounted on a large-format wiring board, and then individualized to obtain the solid-state imaging device 1 shown in Figure 2.

[0047] As described above, in the solid-state imaging device 1 of the first embodiment, a resin composition is used as the frame 40. This makes it possible to reduce reflected light (stray light) from the inner surface of the frame 40 that is incident on the imaging area 12 of the solid-state image sensor 10, and as a result, it is possible to reduce optical noise such as frame-derived flare or ghosting that occurs in the captured image.

[0048] Furthermore, according to the solid-state imaging device 1 of the first embodiment, the resin composition of the frame 40 includes a coloring agent. This makes it possible to further reduce reflected light (stray light) from the inner surface of the frame 40 that is incident on the imaging area 12 of the solid-state image sensor 10, and as a result, optical noise such as frame-derived flare or ghosting that occurs in the captured image can be further reduced.

[0049] Furthermore, with a frame 40 made of a resin composition, there is no need to consider wetting spread as with a frame 40X made of a liquid adhesive (W), so the frame area (D1) outside the imaging area 12 of the solid-state image sensor 10 can be reduced. For example, if the thickness T of the transparent substrate 30 is about 500 μm, the distance D1 between the edge of the solid-state image sensor 10 and the imaging area 12 of the solid-state image sensor 10 can be reduced to less than 1000 μm. As a result, the solid-state image sensor 10, which is a relatively expensive semiconductor chip, can be miniaturized, and the solid-state imaging device 1 can be made smaller and less expensive.

[0050] Furthermore, according to the solid-state imaging device 1 of the first embodiment, the distance D2 between the end face of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10 is 375 μm or more, and the distance D4 between the end face of the transparent substrate 30 and the outer surface of the frame 40 is 50 μm or more. This makes it possible to reduce reflected light (stray light) from the end face of the transparent substrate 30 that is incident on the imaging area 12 of the solid-state image sensor 10, and as a result, it is possible to reduce optical noise such as flare or ghosting originating from the transparent substrate edge that occurs in the captured image.

[0051] The distance D4 between the end face of the transparent substrate 30 and the outer surface of the frame 40 is preferably 50 μm or more and 300 μm or less, more preferably 50 μm or more and 150 μm or less, and even more preferably 50 μm or more and 75 μm or less. For example, W + D3 is 300 to 350 μm (W is 50 to 250 μm, and D3 is about 100 to 300 μm). For example, if D4 is between 50 μm and 300 μm, the preferred ranges for each value are as follows: Thickness T of transparent substrate 30: 500 μm Frame 40 height H: 40μm Frame 40 width W: 150μm Distance (overhang) D4 between the edge of the transparent substrate 30 and the outer surface of the frame 40: 50 μm or more and 300 μm or less The distance D2 between the edge of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10 is 375 μm or more and 625 μm or less.

[0052] By the way, if the length of the transparent substrate 30 is increased, especially if the overhang of the transparent substrate 30 on the outside of the frame 40 is increased, the transparent substrate 30 may come into contact with the wiring 22 (bonding wire). Also, it becomes more difficult for the resin 60 to get under the overhang of the transparent substrate 30 on the outside of the frame 40.

[0053] In this regard, it is preferable that the distance D4 between the end face of the transparent substrate 30 and the outer surface of the frame 40 be 150 μm or less. This makes it easier for the resin 60 to enter the area under the eaves of the transparent substrate 30 on the outside of the frame 40. In this case, the preferred range for each value is as follows: Thickness T of transparent substrate 30: 500 μm Frame 40 height H: 40μm Frame 40 width W: 150μm Distance (overhang) D4 between the edge of the transparent substrate 30 and the outer surface of the frame 40: 50 μm or more and 150 μm or less The distance D2 between the edge of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10 is 375 μm or more and 475 μm or less.

[0054] It is even more preferable that the distance D4 between the end face of the transparent substrate 30 and the outer surface of the frame 40 be 75 μm or less. This makes it easier for the resin 60 to enter under the eaves of the transparent substrate 30 on the outside of the frame 40, and further reduces contact between the transparent substrate 30 and the wiring 22 (bonding wires). In this case, the preferred range for each value is as follows: Thickness T of transparent substrate 30: 500 μm Frame 40 height H: 40μm Frame 40 width W: 150μm Distance (overhang) D4 between the edge of the transparent substrate 30 and the outer surface of the frame 40: 50 μm or more and 75 μm or less Distance D2 between the edge of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10: 375 μm or more and 400 μm or less

[0055] [Example 1] As described above, if the length of the transparent substrate 30 is increased, especially if the overhang of the transparent substrate 30 on the outside of the frame 40 is increased, the transparent substrate 30 may come into contact with the wiring 22 (bonding wire). Also, it becomes more difficult for the resin 60 to enter the overhang of the transparent substrate 30 on the outside of the frame 40.

[0056] In this regard, the inventors of the present invention devise a method of cutting out the peripheral corner portion of the transparent substrate on the solid-state image sensor side. Figure 4 is a schematic cross-sectional view of a solid-state imaging device according to Modification 1 of the first embodiment. As shown in Figure 4, the solid-state imaging device 1A of Modification 1 differs from the first embodiment described above in that it includes a transparent substrate 30A in place of the transparent substrate 30 in the solid-state imaging device 1 shown in Figure 2.

[0057] The transparent substrate 30A differs from the transparent substrate 30 described above in that the peripheral corners on the solid-state image sensor 10 side are beveled, and these peripheral corners on the solid-state image sensor 10 side are shaved off, resulting in a diagonal notch at the peripheral corner on the solid-state image sensor 10 side. Note that the method for forming the notch is not limited to beveling; various cutting processes and other various processes may be applied. As a result, in the transparent substrate 30A, the thickness at the peripheral corners is thinner than the thickness at the center of the plane.

[0058] According to this modified example 1, the solid-state imaging device 1A can reduce contact between the transparent substrate 30A and the wiring (bonding wire) 22. In addition, the resin 60 can be more easily contained under the eaves of the transparent substrate 30 on the outside of the frame 40.

[0059] [Differentiation 2] Figure 5 is a schematic cross-sectional view of a solid-state imaging device according to a modified example 2 of the first embodiment. As shown in Figure 5, the solid-state imaging device 1B of modified example 2 differs from the first embodiment described above in that it is equipped with a transparent substrate 30B instead of the transparent substrate 30 in the solid-state imaging device 1 shown in Figure 2.

[0060] The transparent substrate 30B differs from the transparent substrate 30 described above in that a step cut is applied to the peripheral corner on the solid-state image sensor 10 side, resulting in a stepped notch at the peripheral corner on the solid-state image sensor 10 side. The method for forming the notch is not limited to beveling, and various cutting processes and other various processes may be applied. As a result, in the transparent substrate 30A, the thickness at the peripheral corner is thinner than the thickness at the center of the plane.

[0061] In this modified example 2, the solid-state imaging device 1B also reduces contact between the transparent substrate 30A and the wiring (bonding wire) 22. Furthermore, it allows the resin 60 to easily enter the area under the eaves of the transparent substrate 30 on the outside of the frame 40.

[0062] [Second Embodiment] (Solid-state imaging device) Figure 6 is a schematic cross-sectional view of a solid-state imaging device according to the second embodiment. The solid-state imaging device 1C shown in Figure 6 is a so-called CSP (Chip Size Package) type solid-state imaging device. The solid-state imaging device 1C of the second embodiment differs from the solid-state imaging device 1 of the first embodiment described above in that it does not have a wiring board 20, and instead makes direct electrical connections with the outside by electrodes such as pads formed on the back surface of the solid-state image sensor 10.

[0063] Specifically, the transparent substrate 30 is positioned opposite the solid-state image sensor 10. The frame (rib material) 40 is positioned between the solid-state image sensor 10 and the transparent substrate 30 so as to surround the imaging area 12 of the solid-state image sensor 10. Electrodes 25, such as pads, are formed on the back surface of the solid-state image sensor 10, and conductive members 24, such as solder balls, are electrically connected to these electrodes 25.

[0064] (Manufacturing method for solid-state imaging devices) Next, with reference to Figure 7, a method for manufacturing a solid-state imaging device according to the second embodiment will be described. Figure 7 is a schematic diagram showing a method for manufacturing a solid-state imaging device according to the second embodiment.

[0065] First, as shown in Figure 7, a transparent substrate 30 with a frame 40 formed on it, i.e., a "transparent substrate with a frame" 35, is fabricated in the same manner as described above. Also, a solid-state image sensor 10 with electrodes 25, such as pads, formed on its back side is prepared.

[0066] Next, the "transparent substrate with frame" 35 is combined with the solid-state image sensor 10. For example, the solid-state image sensor 10 is mounted on a stage. Alternatively, the "transparent substrate with frame" 35 is attracted by a bond head via a collet and mounted onto the solid-state image sensor 10.

[0067] Then, the "transparent substrate with frame" 35 is heat-pressed onto the solid-state image sensor 10 by the stage (heating mechanism) or by the stage (heating mechanism) and the bond head (heating mechanism), and by the bond head (pressure mechanism, load detection sensor) through the collet.

[0068] Next, a conductive member 24, such as a solder ball, is bonded to the electrode 25, such as a pad, on the back side of the solid-state image sensor 10. This results in the solid-state imaging device 1C shown in Figure 6.

[0069] Alternatively, a manufacturing method may be used in which a large-format solid-state image sensor, before being separated into individual pieces, and a large-format transparent substrate with a frame, before being separated into individual pieces, are bonded together, and then separated into individual pieces to obtain a solid-state imaging device.

[0070] In this second embodiment of the solid-state imaging device 1C, a resin composition is also used as the frame 40. This reduces the reflected light (stray light) from the inner surface of the frame 40 that is incident on the imaging area 12 of the solid-state image sensor 10, and as a result, it is possible to reduce optical noise such as frame-derived flare or ghosting that occurs in the captured image.

[0071] Furthermore, with a frame 40 made of a resin composition, there is no need to consider wetting spread as with a frame 40X made of a liquid adhesive (W), so the frame area (D1) outside the imaging area 12 of the solid-state image sensor 10 can be reduced. For example, if the thickness T of the transparent substrate 30 is about 500 μm, the distance D1 between the edge of the solid-state image sensor 10 and the imaging area 12 of the solid-state image sensor 10 can be reduced to less than 1000 μm. As a result, the solid-state image sensor 10, which is a relatively expensive semiconductor chip, can be miniaturized, and the solid-state imaging device 1 can be made smaller and less expensive.

[0072] Furthermore, in the solid-state imaging device 1C of the second embodiment, the distance D2 between the end face of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10 is 375 μm or more, and the distance D4 between the end face of the transparent substrate 30 and the outer surface of the frame 40 is 50 μm or more. This makes it possible to reduce reflected light (stray light) from the end face of the transparent substrate 30 that is incident on the imaging area 12 of the solid-state image sensor 10, and as a result, optical noise such as flare or ghosting originating from the transparent substrate edge that occurs in the captured image can be reduced.

[0073] Although embodiments of the present invention have been described above, the present invention is not limited to the embodiments described above, and various modifications and variations are possible. For example, the embodiments described above illustrate so-called GoC (Glass on Chip) type solid-state imaging devices (Figure 2) and so-called CSP (Chip Size Package) type solid-state imaging devices (Figure 4). However, the features of the present invention are not limited thereto and are applicable to various types of solid-state imaging devices. [Examples]

[0074] The present invention will be described in detail below based on examples, but the present invention is not limited to the following examples.

[0075] (Example 1) As described below, the solid-state imaging device 1 shown in Figures 1 and 2 was manufactured according to the manufacturing method shown in Figures 3A to 3F.

[0076] (Transparent substrate with frame) <Solution A containing resin A> 40 g of diallyl isocyanuric acid and 29 g of diallyl monomethyl isocyanuric acid were dissolved in 264 g of dioxane to obtain a solution. Next, 143 μL of xylene solution of platinum vinylsiloxane complex (platinum vinylsiloxane complex containing 3% by mass of platinum, manufactured by Yumicore Precious Metals Japan, Pt-VTSC-3X) was added to the solution to obtain solution 1.

[0077] Furthermore, solution 2 was obtained by dissolving 88 g of 1,3,5,7-tetrahydrogen-1,3,5,7-tetramethylcyclotetrasiloxane in 176 g of toluene. Then, under a nitrogen atmosphere (containing 3% oxygen), solution 2 was heated to 105°C, and solution 1 was added dropwise to solution 2 over 3 hours. After the end of the dropwise addition, the state was maintained for 30 minutes to obtain solution 3. The reaction rate of the alkenyl groups of the compounds contained in solution 3 was measured by 1H-NMR, and the reaction rate was found to be 95% or higher.

[0078] Furthermore, solution 4 was obtained by dissolving 62 g of 1-vinyl-3,4-epoxycyclohexane in 62 g of toluene. Then, under a nitrogen atmosphere (containing 3% oxygen), solution 3 was heated to 105°C, and solution 4 was added dropwise to solution 3 over 1 hour. After the end of the dropwise addition, the state was maintained for 30 minutes to obtain solution 5. After confirming that the reaction rate of the alkenyl groups of the compounds contained in solution 5 was 95% or more, solution 5 was cooled to terminate the reaction.

[0079] Next, the solvents (toluene and dioxane) were removed from solution 5 under reduced pressure to obtain a solid. Propylene glycol 1-monomethyl ether 2-acetate was added to the solid to obtain solution A containing 70% by mass of resin A.

[0080] <Other materials> In addition to solution A, the following materials were prepared as materials for the curable composition. • Radical generator (2,2-dimethoxy-2-phenylacetophenone) (Omnirad651, IGM Resins BV) • Trifunctional acrylic compound (tris-(2-acryloxyethyl)isocyanurate) (A-9300, Shin-Nakamura Chemical Co., Ltd.) • Coloring agent (carbon black MA100, manufactured by Mitsubishi Chemical Corporation)

[0081] <Curable composition> A curable composition was prepared by mixing 100g of solution A, 0.07g of Omnirad651, 35g of A-9300, and 0.175g of carbon black MA100.

[0082] Next, as shown in Figure 3A, the above-mentioned curable composition was applied to the surface of a large glass substrate 30Z measuring 100 mm × 100 mm × 0.5 mm using a spin coater to form a coating film 40Z on the large glass substrate 30Z, thereby obtaining the first laminate 35A. Next, the first laminate 35A was heated on a hot plate heated to 125°C for 10 minutes to obtain a large glass substrate 30Z on which a thin film 40Z with a thickness of 40 μm was formed.

[0083] Next, as shown in Figure 3B, using an exposure apparatus (manual exposure machine, manufactured by Dainippon Kaken) (lamp: high-pressure mercury lamp), a portion 40 of the coating film 40Z of the heated first laminate 35A was exposed by soft contact exposure through a photomask M on which a grid-like line pattern M1 was formed, using the optimal integrated light intensity. Then, the exposed first laminate 35A was heated for 10 minutes on a hot plate heated to 95°C. As a result, the exposed portion 40 of the coating film 40Z became semi-cured.

[0084] Next, the first laminate 35A, which had been left standing for 1 minute, was immersed in an alkaline developer (alkaline component: TMAH, TMAH content: 2.38% by mass) for 60 seconds. After that, the first laminate 35A that had been immersed in the alkaline developer was washed with water for 30 seconds. Next, the moisture on the surface of the washed first laminate 35A was removed with compressed air. As a result, as shown in Figures 3C and 3D, the thin film 40Z on the large glass substrate 30Z was patterned, and a frame 40 (rib material), which is a semi-cured frame-shaped (square cylindrical) wall, was provided on the large glass substrate 30Z, which was obtained as the second laminate 35B.

[0085] Next, a dicing film was temporarily bonded to the side of the second laminate 35B that did not have a frame 40. Then, the large glass substrate 30Z was cut with a dicing blade along the cut line CL between the frames 40 to a size of 9 mm x 6 mm, and the dicing film was peeled off to obtain the individual "framed transparent substrate" 35 (frame height 40 μm, width 150 μm) shown in Figure 3E.

[0086] (Solid-state image sensor mounted on a wiring board) Furthermore, as shown in Figure 3F, multiple solid-state image sensors 10 were bonded to a large-format wiring board 20, and the multiple solid-state image sensors 10 and the large-format wiring board 20Z were connected by bonding wires 22, after which they were separated into individual pieces. This resulted in obtaining a "solid-state image sensor mounted on a wiring board" 15.

[0087] (Bonding) Next, as shown in Figure 3F, a "framed transparent substrate" 35 was laminated onto a "solid-state image sensor mounted on a wiring board" 15 using a bonding machine (Athlete FA Co., Ltd. "CB-505"). Specifically, a collet was placed on the upper bond head, and then the "framed transparent substrate" 35 was positioned so that the side without the frame 40 was in contact with the collet.

[0088] Subsequently, the bond head and stage were heated to 100°C, and the bond head was brought close to the "solid-state image sensor mounted on the wiring board" 15. When the load detection sensor attached to the bond head indicated 5N, a 10-second wait was held to release the suction of the "transparent substrate with frame" 35 by the collet. Next, the laminate of the "solid-state image sensor mounted on the wiring board" 15 and the "transparent substrate with frame" 35 was heated in an oven at 200°C for 2 hours to bond the "solid-state image sensor mounted on the wiring board" 15 and the "transparent substrate with frame" 35.

[0089] Next, resin was potted onto the wiring 22, such as bonding wires, and the wiring 22 was covered with potting resin 60. Conductive members 24, such as solder balls, were then bonded to the back side of the wiring board 20 in combination. As a result, as shown in Figures 1 and 2, a solid-state imaging device 1 of Example 1 was obtained, in which a "transparent substrate with frame" 35 was bonded to a "solid-state image sensor" 15 mounted on a wiring board.

[0090] The main components of the solid-state imaging device 1 in Example 1 are as follows and shown in Tables 1 and 2. <Configuration of a Solid State Imaging System> Frame material: The resin composition described above. Thickness T of transparent substrate 30: 500 μm Frame 40 height H: 40μm Frame 40 width W: 150μm Distance D1 between the end face of the solid-state image sensor 10 and the imaging area 12 of the solid-state image sensor 10: 575 μm Distance D2 between the edge of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10: 375 μm The distance D3 between the inner surface of frame 40 and the imaging area 12 of the solid-state image sensor 10 is 175 μm. Distance (overhang) D4 between the edge of the transparent substrate 30 and the outer surface of the frame 40: 50 μm Transparent substrate edge processing: None Frame color: Black

[0091] (Examples 2-6) When fabricating the "framed transparent substrate" 35, the procedure was the same as in Example 1, except for the size of the transparent substrate 30. Examples 2 to 6 differ from Example 1 in that D2 and D4 are different. The main differences in the configuration of the solid-state imaging apparatus in Examples 2 to 6 are as follows and in Tables 1 to 2.

[0092] Example 2 In Example 2, D4 is larger than in Example 1, and as a result, D2 is larger. The distance D2 between the edge of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10 is 400 μm. Distance (overhang) D4 between the edge of the transparent substrate 30 and the outer surface of the frame 40: 75 μm

[0093] Example 3 In Example 3, D4 is even larger than in Example 2, and as a result, D2 is even larger. Distance D2 between the edge of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10: 425 μm Distance (overhang) D4 between the edge of the transparent substrate 30 and the outer surface of the frame 40: 100 μm

[0094] Example 4 In Example 4, D4 is even larger than in Example 3, and as a result, D2 is even larger. Distance D2 between the edge of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10: 475 μm Distance (overhang) D4 between the edge of the transparent substrate 30 and the outer surface of the frame 40: 150 μm

[0095] Example 5 In Example 5, D4 is even larger than in Example 4, and as a result, D2 is even larger. Distance D2 between the edge of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10: 525 μm Distance (overhang) D4 between the edge of the transparent substrate 30 and the outer surface of the frame 40: 200 μm

[0096] Example 6 In Example 6, D4 is even larger than in Example 5, and as a result, D2 is even larger. Distance D2 between the edge of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10: 625 μm Distance (overhang) D4 between the edge of the transparent substrate 30 and the outer surface of the frame 40: 300 μm

[0097] (Example 7) The process for fabricating the "framed transparent substrate" 35 was carried out in the same manner as in Example 3, except that the edges of the transparent substrate 30 were processed. Example 7 differs from Example 3 in that, as shown in Figure 4, the peripheral corners of the transparent substrate 30 on the solid-state image sensor 10 side are beveled and have diagonal cutouts. The main differences in the configuration of the solid-state imaging device in Example 7 are as follows. Transparent substrate edge processing: Beveled edge processing, diagonally cut notches. Transparent substrate edge processing depth: 10 μm

[0098] (Example 8) The process for fabricating the "framed transparent substrate" 35 was carried out in the same manner as in Example 4, except that the edges of the transparent substrate 30 were processed. Example 8 differs from Example 4 in that, as shown in Figure 4, the peripheral corners of the transparent substrate 30 on the solid-state image sensor 10 side are beveled and have diagonal cutouts. The main differences in the configuration of the solid-state imaging device in Example 8 are as follows. Transparent substrate edge processing: Beveled edge processing, diagonally cut notches. Transparent substrate edge processing depth: 50 μm

[0099] (Example 9) The process for manufacturing the "framed transparent substrate" 35 was carried out in the same manner as in Example 3, except that the edges of the transparent substrate 30 were processed. Example 9 differs from Example 3 in that, as shown in Figure 5, a step cut was made on the peripheral corner of the transparent substrate 30 on the solid-state image sensor 10 side, resulting in a stepped notch. The main differences in the configuration of the solid-state imaging device in Example 9 are as follows. Transparent substrate edge processing: Step cut processing is available, with notches cut in a stepped (stepped) shape. Transparent substrate edge processing depth: 10 μm

[0100] (Example 10) When fabricating the "transparent substrate with frame" 35, the procedure was carried out in the same manner as in Example 7, except that a coloring agent was not used as a material for the curable composition of the frame 40. Example 10 differs from Example 7 in that the frame color is different. The main differences in the configuration of the solid-state imaging device in Example 10 are as follows. Frame color: Transparent

[0101] (Comparative Example 1) A conventional solid-state imaging device, as shown in Figure 8, was fabricated as Comparative Example 1. The main components of the solid-state imaging device of Comparative Example 1 are as follows: <Configuration of a Solid State Imaging System> Frame material: Liquid adhesive instead of the resin composition mentioned above. Thickness T of transparent substrate 30: 500 μm Frame 40 height H: 120 μm Frame 40 width W: 440μm Distance D1 between the end face of the solid-state image sensor 10 and the imaging area 12 of the solid-state image sensor 10: 1000 μm Distance D2 between the edge of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10: 725 μm The distance D3 between the inner surface of frame 40 and the imaging area 12 of the solid-state image sensor 10 is 265 μm. Distance (overhang) D4 between the edge of the transparent substrate 30 and the outer surface of the frame 40: 25 μm Transparent substrate edge processing: None Frame color: Transparent

[0102] (Comparative Example 2) The solid-state imaging device shown in Figure 9 was fabricated as Comparative Example 2. The main components of the solid-state imaging device of Comparative Example 2 are as follows. <Configuration of a Solid State Imaging System> Frame material: The resin composition described above. Thickness T of transparent substrate 30: 500 μm Frame 40 height H: 40μm Frame 40 width W: 150μm Distance D1 between the end face of the solid-state image sensor 10 and the imaging area 12 of the solid-state image sensor 10: 575 μm Distance D2 between the edge of the transparent substrate 30Y and the imaging area 12 of the solid-state image sensor 10: 350 μm The distance D3 between the inner surface of frame 40 and the imaging area 12 of the solid-state image sensor 10 is 175 μm. Distance (overhang) D4 between the edge of the transparent substrate 30Y and the outer surface of the frame 40: 25 μm Transparent substrate edge processing: None Frame color: Black

[0103] (evaluation) This section explains the evaluation method for each evaluation item.

[0104] <Frame-derived flare, transparent substrate edge-derived flare> For the solid-state imaging device under evaluation, the number of pixels exceeding a predetermined threshold (hereinafter referred to as "abnormal pixels") was confirmed using a ghost and flare evaluation system (GCS-2T, manufactured by Tsubosaka Electric Co., Ltd.) and calculated using the following formula. (Number of abnormal pixels / Total number of pixels) × 100 = Frame-derived flare (%) or transparent substrate edge-derived flare (%)

[0105] <Contact between wire and transparent substrate> Using a desktop microscope (Hitachi High-Tech Corporation's "Miniscope TM3030Plus", observation magnification: 800x), the contact between the wire 22 and the transparent substrate was confirmed in a cross-section near the wire 22 of the solid-state image sensor 10 and the transparent substrate 30.

[0106] <Potting resin fillability> The filling properties of the potting resin 60 under the eaves of the transparent substrate 30 outside the frame 40 were confirmed using a tabletop microscope (Hitachi High-Tech Corporation's "Miniscope TM3030Plus", observation magnification: 800x) in a cross-section of the potting resin 60. Cases where there were no air bubbles and the potting resin 60 was filled under the eaves of the transparent substrate 30 outside the frame 40 were designated as "A", and cases where there were air bubbles and the potting resin 60 was not filled under the eaves of the transparent substrate 30 outside the frame 40 were designated as "B".

[0107] The evaluation results for each evaluation item are shown in Tables 1 and 2 below. [Table 1]

[0108] [Table 2]

[0109] From the results of Comparative Example 2 and Examples 1-6, when the distance D1 between the edge face of the solid-state image sensor 10 and the imaging area 12 of the solid-state image sensor 10 was 575 μm, the flare originating from the transparent substrate edge improved as the distance D2 between the edge face of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10 increased, and as the distance (eaves) D4 between the edge face of the transparent substrate 30 and the outer surface of the frame 40 increased. In particular, when the distance D2 between the edge face of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10 was 475 μm or more, and the distance (eaves) D4 between the edge face of the transparent substrate 30 and the outer surface of the frame 40 was 150 μm or more, the flare originating from the transparent substrate edge became 0%. This is thought to be because the longer the distance D2 between the edge face of the transparent substrate 30 and the imaging area 12 of the solid-state image sensor 10, the less likely it is that light reflected from the edge face of the transparent substrate will enter the pixels.

[0110] From the results of Examples 1-4 and Examples 5-6, it was found that when the distance D4 between the end face of the transparent substrate 30 and the outer surface of the frame 40 was 150 μm or less, there were no air bubbles under the overhang of the transparent substrate 30 on the outside of the frame 40, and the potting resin 60 was filled up to the overhang of the transparent substrate 30 on the outside of the frame 40.

[0111] From the results of Examples 1-2 and 3-6, it was found that when the distance D4 between the end face of the transparent substrate 30 and the outer surface of the frame 40 was 75 μm or less, no contact was observed between the wire 22 and the transparent substrate 30.

[0112] From the results of Examples 3-4 and 7-9, no contact was observed between the wire 22 and the transparent substrate 30 when the edges of the transparent substrate 30 were processed.

[0113] From the results of Examples 3 and 10, it was found that when the frame 40 was black, frame-derived flare could be suppressed. [Explanation of Symbols]

[0114] 1,1A,1B,1C,1X,1Y Solid State Imaging Device 10,10X Solid State Image Sensor 15. Solid-state image sensor mounted on a wiring board 12 Imaging area 20 Wiring boards 22 Wiring 24 Conductive member 25 electrodes 30,30A,30B,30X,30Y Transparent substrate 35 Transparent substrate with frame 35A First Laminate 35B Second Laminate 40, 40X frame 60 resin

Claims

1. Solid-state image sensor, A transparent substrate is arranged to face the solid-state image sensor, A frame is disposed between the solid-state image sensor and the transparent substrate so as to surround the imaging area of ​​the solid-state image sensor, Equipped with, The distance between the end face of the solid-state image sensor and the imaging area of ​​the solid-state image sensor is 650 μm or less. The distance between the end face of the transparent substrate and the imaging area of ​​the solid-state image sensor is 375 μm or more. Solid-state imaging device.

2. The solid-state imaging apparatus according to claim 1, wherein the distance between the end face of the transparent substrate and the outer surface of the frame is 50 μm or more.

3. The distance between the end face of the transparent substrate and the outer surface of the frame is 50 μm or more and 300 μm or less. The distance between the end face of the transparent substrate and the imaging area of ​​the solid-state image sensor is 375 μm or more and 625 μm or less. The solid-state imaging apparatus according to claim 2.

4. The solid-state imaging apparatus according to claim 1 or 2, wherein the transparent substrate has a notch at the peripheral corner on the solid-state image sensor side.

5. The solid-state imaging apparatus according to claim 1 or 2, wherein the resin composition of the frame comprises a coloring agent.

Images