Resin compositions, sheets, prepregs, printed circuit boards, and semiconductor devices

Abstract

The present invention provides a resin composition that can suppress the temperature rise of semiconductor devices and improve the solder heat resistance of the resulting substrate material. [Solution] A resin composition that can be used as a substrate material for a semiconductor device, comprising a resin (A) and an inorganic filler (B), wherein the inorganic filler (B) comprises an alumina filler (b), the content of the alumina filler (b) in the resin composition is 50 parts by mass or more and 100 parts by mass or less, when the content of the inorganic filler (B) in the resin composition is 100 parts by mass, the alumina filler (b) comprises a polyhedral alumina filler, the adhesion force of the resin composition to copper foil is 0.10 N / mm or more, and the thermal conductivity of the resin composition is 1.20 W / m·K or more.

Description

Technical Field

[0001] The present invention relates to a resin composition, a sheet, a prepreg, a printed wiring board and a semiconductor device.

Background Art

[0002] As a resin composition used for a substrate material, for example, the technology described in Patent Document 1 is known.

[0003] Patent Document 1 describes a filler-containing resin composition containing a thermoplastic polyimide resin component, a thermosetting component, and a filler component, wherein spherical silica is used as the filler component. It is described that according to the filler-containing resin composition of Patent Document 1, low melt viscosity can be achieved before curing, excellent processability can be exhibited, and the coefficient of linear expansion after curing of the resin composition can be reduced.

Prior Art Literature

Patent Literature

[0004]

Patent Document 1

Summary of the Invention

Problem to be Solved by the Invention

[0005] The present invention provides a resin composition capable of suppressing temperature rise of a semiconductor device and improving solder heat resistance of the resulting substrate material.

Means for Solving the Problem

[0006] According to the present invention, the following resin composition, sheet, prepreg, printed wiring board and semiconductor device are provided.

[0007] [1] A resin composition that can be used as a substrate material for semiconductor devices, It comprises resin (A) and inorganic filler (B), The inorganic filler (B) includes an alumina filler (b), The content of the alumina filler (b) in the resin composition is 50 parts by mass or more and 100 parts by mass or less, when the content of the inorganic filler (B) in the resin composition is 100 parts by mass. The alumina filler (b) includes a polyhedral alumina filler, The adhesion force of the resin composition to the copper foil, calculated by the following [Method 1], is 0.10 N / mm or more. A resin composition having a thermal conductivity of 1.20 W / m·K or higher, as calculated by the following [Method 2]. [Method 1] A resin layer made of the resin composition with a thickness of 30 μm is laminated to the roughened surface (Ra: 0.7 μm, Rz: 1.3 μm surface) of a 1.5 μm thick copper foil using a vacuum laminating machine at a temperature of 100°C, a pressure of 0.6 MPa, and a time of 15 seconds to produce a laminate a comprising at least the resin layer and the copper foil. Then, two of the laminates a are prepared, and the resin layers of the laminates a are pressed together using a press machine at a temperature of 200°C, a pressure of 2 MPa, and a time of 60 minutes, so that both sides of the core substrate and the resin layer of the laminate a are in contact with each other, thereby curing the resin layers. A laminate b is prepared comprising copper foil, the resin layer, the core substrate, the resin layer, and the copper foil in this order. Next, copper plating layers are formed on both sides of the laminate b to a thickness of 18 μm. Then, the copper-plated laminate b is cut into pieces 10 mm wide and 150 mm long to serve as test pieces. Using an autograph, a 90° peel test is performed at a speed of 50 mm / min to peel off the copper foil with the copper plating layer on one side of the test piece. The minimum peeling force in the stroke range of 30 mm to 100 mm is defined as the adhesion force of the resin composition to the copper foil. [Method 2] The thermal diffusivity, specific gravity, and specific heat of a cured product made from the resin composition with a thickness of 180 μm, which has been cured by pressurized heating under the conditions of temperature: 200°C, pressure: 2 MPa, and time: 60 minutes, are determined, and the value obtained from the formula thermal conductivity = thermal diffusivity × specific gravity × specific heat is defined as the thermal conductivity of the resin composition. [2] The resin composition according to [1], wherein the thermal conductivity of the resin composition calculated by [Method 2] is 2.00 W / m·K or more. [3] The alumina filler (b) includes alumina filler (b1) and alumina filler (b2), The average particle size of the alumina filler (b1) is 1.0 μm or more and 15.0 μm or less. The resin composition according to [1] or [2], wherein the average particle size of the alumina filler (b2) is 0.1 μm or more and less than 1.0 μm. [4] The alumina filler (b1) comprises alumina filler (b1-1) and alumina filler (b1-2), The average particle size of the alumina filler (b1-1) is 5.0 μm or more and 15.0 μm or less. The resin composition according to [3], wherein the average particle size of the alumina filler (b1-2) is 1.0 μm or more and less than 5.0 μm. [5] The resin composition according to [3] or [4], wherein the alumina filler (b1) comprises a polyhedral alumina filler. [6] The alumina filler (b) is a resin composition according to any one of [1] to [5] above, comprising an alumina filler with an α-conversion rate of 95% or more. [7] The resin composition according to any one of [1] to [6] above, wherein the resin (A) comprises an epoxy resin. [8] The resin composition according to any one of [1] to [7], wherein the resin (A) comprises a phenolic resin. [9] The resin composition according to any one of [1] to [8] above, wherein the resin (A) comprises a cyanate resin.

[10] The resin composition according to any one of [1] to [9] above, wherein the resin (A) does not contain a phenoxy resin, or the content of the phenoxy resin in the resin composition is less than 20 parts by mass when the content of the resin (A) in the resin composition is 100 parts by mass.

[11] The resin composition according to any one of [1] to

[10] above, further comprising a dispersant (C).

[12] The resin composition according to any one of [1] to

[11] above, wherein the substrate material can be used in contact with a metal layer.

[13] The resin composition according to any one of [1] to

[12] above, wherein the semiconductor device comprises a power semiconductor element.

[14] A sheet comprising a resin layer formed from the resin composition according to any one of [1] to

[13] above.

[15] The sheet according to

[14] above, wherein the thickness of the resin layer is 10 µm or more and 150 µm or less.

[16] The sheet according to

[14] or

[15] above, further comprising a metal layer.

[17] A prepreg comprising the resin composition according to any one of [1] to

[13] above and a fiber base material.

[18] The prepreg according to

[17] above, wherein the fiber base material comprises at least one selected from the group consisting of glass fiber base materials, polyamide resin fiber base materials, polyester resin fiber base materials, polyimide resin fiber base materials, and fluororesin fiber base materials.

[19] A printed wiring board comprising an insulating resin layer comprising the resin composition according to any one of [1] to

[13] above, and a circuit layer provided on the insulating resin layer.

[20] A semiconductor device comprising a semiconductor element and an insulating resin layer containing the resin composition according to any one of the above [1] to

[13] .

[21] The semiconductor device according to

[20] , wherein the semiconductor element comprises a power semiconductor element.

Effects of the Invention

[0008] According to the present invention, there can be provided a resin composition that can suppress temperature rise of a semiconductor device and improve the solder heat resistance of a resulting substrate material.

Mode for Carrying Out the Invention

[0009] Hereinafter, embodiments of the present invention will be described. Unless otherwise specified, "A to B" representing a numerical range means not less than A and not more than B.

[0010] [Resin Composition] Along with the miniaturization and higher performance of semiconductor devices, demands for heat dissipation of semiconductor devices are increasing. Further, in the manufacturing process of a semiconductor device, a soldering step may be performed after a substrate material is mounted. In such a manufacturing method, heat resistance of the substrate material in the soldering step is required.

[0011] The inventors of the present invention have conducted intensive studies to provide a resin composition capable of suppressing temperature rise of a semiconductor device and improving the solder heat resistance of a resulting substrate material. First, the inventors found that suppressing temperature rise of a semiconductor device can be achieved by increasing the thermal conductivity of the resin composition. Further studies conducted by the inventors found that the higher the thermal conductivity of the resin composition is and the more the temperature rise of the semiconductor device is suppressed, the more the solder heat resistance of the resulting substrate material tends to decrease. That is, the inventors have found for the first time that there is a trade-off relationship between suppressing temperature rise of a semiconductor device and improving the solder heat resistance of a substrate material.

[0012] Furthermore, the inventors have found that the solder heat resistance of the resulting substrate material can be improved by improving the adhesion of the resin composition to the copper foil. Through further diligent research, the inventors have discovered that by including a specific inorganic filler in the resin composition and setting the adhesion of the resin composition to the copper foil and the thermal conductivity of the resin composition within a specific numerical range, it is possible to provide a resin composition that can suppress the temperature rise of a semiconductor device and improve the solder heat resistance of the resulting substrate material, thus completing the present invention.

[0013] The resin composition of this embodiment is a resin composition that can be used as a substrate material for a semiconductor device, and comprises a resin (A) and an inorganic filler (B), wherein the inorganic filler (B) comprises an alumina filler (b), and the content of the alumina filler (b) in the resin composition is 50 parts by mass or more and 100 parts by mass or less, when the content of the inorganic filler (B) in the resin composition is 100 parts by mass, the alumina filler (b) comprises a polyhedral alumina filler, the adhesion force of the resin composition to copper foil is 0.10 N / mm or more, and the thermal conductivity of the resin composition is 1.20 W / m·K or more. The resin composition of this embodiment is preferably a resin composition that can be used as a substrate material constituting a semiconductor device, from the viewpoint of further suppressing the temperature rise of a semiconductor device, and comprises a resin (A) and an inorganic filler (B), wherein the inorganic filler (B) comprises an alumina filler (b), and the content of the alumina filler (b) in the resin composition is 50 parts by mass or more and 100 parts by mass or less, when the content of the inorganic filler (B) in the resin composition is 100 parts by mass, the alumina filler (b) comprises a polyhedral alumina filler, the adhesion force of the resin composition to copper foil is 0.10 N / mm or more, and the thermal conductivity of the resin composition is 2.00 W / m·K or more.

[0014] The adhesion strength of the resin composition of this embodiment to the copper foil is 0.10 N / mm or more. The adhesion strength of the resin composition of this embodiment to the copper foil is preferably 0.20 N / mm or more, more preferably 0.30 N / mm or more, even more preferably 0.40 N / mm or more, even more preferably 0.50 N / mm or more, and even more preferably 0.55 N / mm or more, from the viewpoint of further improving the solder heat resistance of the resulting substrate material. The upper limit is not particularly limited, but may be, for example, 1.50 N / mm or less, 1.20 N / mm or less, 1.00 N / mm or less, 0.95 N / mm or less, or 0.89 N / mm or less. From the viewpoint of further improving the solder heat resistance of the resulting substrate material, the adhesion strength of the resin composition of this embodiment to the copper foil is preferably 0.10 N / mm or more and 1.50 N / mm or less, more preferably 0.20 N / mm or more and 1.50 N / mm or less, even more preferably 0.30 N / mm or more and 1.20 N / mm or less, even more preferably 0.40 N / mm or more and 1.00 N / mm or less, even more preferably 0.50 N / mm or more and 0.95 N / mm or less, and even more preferably 0.55 N / mm or more and 0.89 N / mm or less.

[0015] The adhesion strength of the resin composition to the copper foil refers to the value calculated by the following [Method 1].

[0016] [Method 1] A resin layer made of a 30 μm thick resin composition is laminated to the roughened surface (Ra: 0.7 μm, Rz: 1.3 μm surface) of a 1.5 μm thick copper foil using a vacuum laminating machine at a temperature of 100°C, a pressure of 0.6 MPa, and a time of 15 seconds to produce a laminate a comprising at least a resin layer and copper foil. Then, two laminates a are prepared, and the resin layers of the laminates a are pressed together using a press machine at a temperature of 200°C, a pressure of 2 MPa, and a time of 60 minutes, so that both sides of the core substrate are in contact with the resin layers of the laminates a, respectively, to cure the resin layers. A laminate b is prepared comprising copper foil, a resin layer, a core substrate, another resin layer, and copper foil in this order. Next, copper plating layers are formed on both sides of laminate b to a thickness of 18 μm. Then, the copper-plated laminate b is cut into pieces 10 mm wide and 150 mm long to serve as test pieces. Using an autograph, a 90° peel test is performed at a speed of 50 mm / min to peel off the copper foil with the copper plating layer on one side of the test piece. The minimum peeling force in the stroke range of 30 mm to 100 mm is defined as the adhesion force of the resin composition to the copper foil.

[0017] The adhesion strength of the resin composition to the copper foil is calculated more specifically by the method described in the examples. The core substrate used in [Method 1] is not particularly limited as long as it can improve the strength of the test piece so that the copper foil does not break immediately in the 90° peel test. For example, a cured prepreg made by impregnating a 60 μm thick glass cloth with epoxy resin can be used.

[0018] The adhesion of the resin composition to the copper foil can be adjusted to a desired value, for example, by adjusting the content of resin (A) and inorganic filler (B); adjusting the type of resin (A); etc.

[0019] The thermal conductivity of the resin composition of this embodiment is 1.20 W / m·K or higher. From the viewpoint of further suppressing the temperature rise of the semiconductor device, the thermal conductivity of the resin composition of this embodiment is preferably 1.40 W / m·K or higher, more preferably 1.50 W / m·K or higher, even more preferably 1.60 W / m·K or higher, even more preferably 1.70 W / m·K or higher, even more preferably 1.80 W / m·K or higher, even more preferably 2.00 W / m·K or higher, even more preferably 2.10 W / m·K or higher, even more preferably 2.20 W / m·K or higher, even more preferably 2.30 W / m·K or higher, and even more preferably 2.40 W / m·K or higher. More preferably, it is 2.80 W / m·K or higher, more preferably 3.20 W / m·K or higher, more preferably 3.50 W / m·K or higher, more preferably 3.80 W / m·K or higher, more preferably 4.00 W / m·K or higher, and more preferably 4.10 W / m·K or higher. The upper limit is not particularly limited, but may be 10.00 W / m·K or lower, 8.00 W / m·K or lower, 6.00 W / m·K or lower, 5.00 W / m·K or lower, or 4.50 W / m·K or lower. The thermal conductivity of the resin composition of this embodiment is preferably 1.40 W / m·K or more and 10.00 W / m·K or less, more preferably 1.50 W / m·K or more and 10.00 W / m·K or less, even more preferably 1.60 W / m·K or more and 10.00 W / m·K or less, even more preferably 1.70 W / m·K or more and 10.00 W / m·K or less, even more preferably 1.80 W / m·K or more and 10.00 W / m·K or less, even more preferably 2.00 W / m·K or more and 10.00 W / m·K or less, even more preferably 2.10 W / m·K or more and 10.00 W / m·K or less, and even more preferably 2.20 W / m·K or more and 10.00 The values ​​are W / m·K or less, more preferably 2.30 W / m·K to 10.00 W / m·K, more preferably 2.40 W / m·K to 10.00 W / m·K, more preferably 2.80 W / m·K to 10.00 W / m·K, more preferably 3.20 W / m·K to 10.00 W / m·K, more preferably 3.50 W / m·K to 8.00 W / m·K, more preferably 3.80 W / m·K to 6.00 W / m·K, more preferably 4.00 W / m·K to 5.00 W / m·K, and more preferably 4.10 W / m·K to 4.50 W / m·K.

[0020] The thermal conductivity of the resin composition refers to the value calculated by the following [Method 2].

[0021] [Method 2] The thermal diffusivity, specific gravity, and specific heat of a cured resin composition with a thickness of 180 μm, cured by pressurized heating under the conditions of temperature: 200°C, pressure: 2 MPa, and time: 60 minutes, are determined, and the value obtained from the formula thermal conductivity = thermal diffusivity × specific gravity × specific heat is defined as the thermal conductivity of the resin composition.

[0022] The thermal conductivity of the resin composition is calculated more specifically by the method described in the examples.

[0023] The thermal conductivity of the resin composition can be set to a desired value by, for example, adjusting the content of resin (A) and inorganic filler (B); adjusting the type of resin (A); adjusting the content of alumina filler (b) in the inorganic filler (B); using multiple alumina fillers (b) of different particle sizes; adjusting the content of polyhedral alumina fillers in the alumina filler (b); and so on.

[0024] The shape of the resin composition in this embodiment is not particularly limited and may include, for example, sheet-like, varnish-like, film-like, or other similar shapes.

[0025] The following describes each component included in the resin composition of this embodiment.

[0026] <Resin (A)> The resin composition of this embodiment includes resin (A). Resin (A) includes, for example, at least one selected from the group consisting of thermosetting resins and thermoplastic resins, and preferably includes a thermosetting resin. The thermosetting resin includes, for example, at least one selected from the group consisting of epoxy resins, phenolic resins, cyanate resins, and maleimide resins. The thermoplastic resin includes, for example, at least one selected from the group consisting of phenoxy resins, polyester resins, and polyamide resins.

[0027] Resin (A) preferably includes an epoxy resin from the viewpoint of further improving the thermal conductivity of the resin composition. Epoxy resins include, for example, bisphenol type epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, tetramethylbisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol E type epoxy resin, bisphenol M type epoxy resin, bisphenol P type epoxy resin, and bisphenol Z type epoxy resin; novolac type epoxy resins such as phenol novolac type epoxy resin and cresol novolac type epoxy resin; biphenyl type epoxy resin, biphenyl aralkyl type epoxy resin, arylalkylene type epoxy resin, naphthalene type epoxy resin, anthracene type epoxy resin, phenoxy type epoxy resin, dicyclopentadiene type epoxy resin, norbornene type epoxy resin, and ada The resin composition comprises at least one selected from the group consisting of mantan-type epoxy resin, fluorene-type epoxy resin, triphenylmethane-type epoxy resin, Zylok-type epoxy resin, etc., and from the viewpoint of further improving the thermal conductivity of the resin composition, preferably comprises at least one selected from the group consisting of bisphenol-type epoxy resin, naphthalene-type epoxy resin, and triphenylmethane-type epoxy resin, more preferably comprises at least one selected from the group consisting of bisphenol F-type epoxy resin, bisphenol A-type epoxy resin, naphthalene-type epoxy resin, and triphenylmethane-type epoxy resin, and even more preferably comprises at least one selected from the group consisting of bisphenol F-type epoxy resin and naphthalene-type epoxy resin.

[0028] The epoxy resin content in the resin composition of this embodiment is preferably 20 parts by mass or more and 80 parts by mass or less, more preferably 30 parts by mass or more and 70 parts by mass or less, and even more preferably 35 parts by mass or more and 55 parts by mass or less, when the resin (A) content in the resin composition is 100 parts by mass, from the viewpoint of further improving the thermal conductivity of the resin composition.

[0029] Resin (A) preferably includes a phenolic resin from the viewpoint of further improving the thermal conductivity of the resin composition. Phenolic resins include, for example, novolac-type phenolic resins such as phenol novolac resin, cresol novolac resin, bisphenol novolac, phenol-biphenyl novolac resin, biphenyl aralkyl-type phenolic resin, allylated novolac-type phenolic resin, xylylene novolac-type phenolic resin; polyvinylphenol; polyfunctional phenolic resins such as triphenolmethane-type phenolic resin; modified phenolic resins such as terpene-modified phenolic resin, dicyclopentadiene-modified phenolic resin; phenol aralkyl resins containing a phenylene skeleton and / or a biphenylene skeleton, phenylene and The resin composition comprises at least one selected from the group consisting of phenol aralkyl type phenol resins such as biphenylene skeleton-containing naphthol aralkyl resins; benzoxazine resins; and, from the viewpoint of further improving the thermal conductivity of the resin composition, preferably at least one selected from the group consisting of novolac type phenol resins, cresol novolac resins, biphenyl aralkyl type phenol resins, and benzoxazine resins, more preferably at least one selected from the group consisting of cresol novolac resins and benzoxazine resins, and even more preferably benzoxazine resins.

[0030] The content of phenolic resin in the resin composition of this embodiment is preferably 30 parts by mass or more and 70 parts by mass or less, more preferably 40 parts by mass or more and 65 parts by mass or less, and even more preferably 46 parts by mass or more and 60 parts by mass or less, when the content of resin (A) in the resin composition is 100 parts by mass, from the viewpoint of further improving the thermal conductivity of the resin composition.

[0031] Resin (A) preferably includes a cyanate resin. The cyanate resin includes, for example, at least one selected from the group consisting of novolac-type cyanate resins such as phenol novolac type and cresol novolac type; aralkyl-type cyanate resins such as phenyl aralkyl type, biphenyl aralkyl type and naphthalene aralkyl type; and bisphenol-type cyanate resins such as bisphenol A type cyanate resin, bisphenol E type cyanate resin, and tetramethylbisphenol F type cyanate resin. Preferably, it includes at least one selected from the group consisting of novolac-type cyanate resin and naphthol aralkyl-type cyanate resin, and more preferably, it includes novolac-type cyanate resin.

[0032] The cyanate resin content in the resin composition of this embodiment is preferably 0.1 parts by mass or more and 10 parts by mass or less, more preferably 1 part by mass or more and 6 parts by mass or less, and even more preferably 2 parts by mass or more and 4 parts by mass or less, when the content of resin (A) in the resin composition is 100 parts by mass.

[0033] Resin (A) preferably includes an epoxy resin, a phenolic resin, and a cyanate resin, from the viewpoint of further improving the adhesion of the resin composition to the copper foil and further improving the thermal conductivity of the resin composition. The total content of epoxy resin, phenolic resin, and cyanate resin in the resin composition of this embodiment is preferably 80 parts by mass or more and 100 parts by mass or less, more preferably 90 parts by mass or more and 100 parts by mass or less, and even more preferably 95 parts by mass or more and 100 parts by mass or less, from the viewpoint of further improving the adhesion of the resin composition to the copper foil and further improving the thermal conductivity of the resin composition, when the content of resin (A) in the resin composition is 100 parts by mass.

[0034] The phenoxy resin content in the resin composition of this embodiment is preferably less than 20 parts by mass, more preferably less than 15 parts by mass, even more preferably less than 10 parts by mass, even more preferably less than 5 parts by mass, even more preferably less than 1 part by mass, and even more preferably less than 0.1 parts by mass, when the content of resin (A) in the resin composition is 100 parts by mass, from the viewpoint of further improving the thermal conductivity of the resin composition. Furthermore, resin (A) is more preferably free of phenoxy resin.

[0035] The content of resin (A) in the resin composition of this embodiment is preferably 3 parts by mass or more and 20 parts by mass or less, more preferably 5 parts by mass or more and 15 parts by mass or less, even more preferably 7 parts by mass or more and 13 parts by mass or less, and even more preferably 8 parts by mass or more and 12 parts by mass or less, when the total content of nonvolatile components in the resin composition is 100 parts by mass. If the content of resin (A) in the resin composition is above the lower limit, the adhesion of the resin composition to the copper foil can be further improved, and if the content of resin (A) in the resin composition is below the upper limit, the thermal conductivity of the resin composition can be further improved.

[0036] <Inorganic filler (B)> The resin composition of this embodiment contains an inorganic filler (B). The inorganic filler (B) includes the alumina filler (b). In addition to the alumina filler (b), the inorganic filler (B) includes at least one selected from the group consisting of, for example, silica filler, boron nitride filler, and aluminum nitride filler.

[0037] The content of alumina filler (b) in the resin composition is 50 parts by mass or more and 100 parts by mass or less, when the content of inorganic filler (B) in the resin composition is 100 parts by mass. The content of alumina filler (b) in the resin composition is preferably 70 parts by mass or more and 100 parts by mass or less, more preferably 80 parts by mass or more and 100 parts by mass or less, even more preferably 90 parts by mass or more and 100 parts by mass or less, even more preferably 95 parts by mass or more and 100 parts by mass or less, even more preferably 98 parts by mass or more and 100 parts by mass or less, and even more preferably 100 parts by mass, when the content of inorganic filler (B) in the resin composition is 100 parts by mass, from the viewpoint of further improving the thermal conductivity of the resin composition.

[0038] Alumina filler (b) includes polyhedral alumina fillers. In addition to polyhedral alumina fillers, alumina filler (b) may include at least one selected from the group consisting of, for example, spherical alumina fillers and plate-shaped alumina fillers.

[0039] The content of polyhedral alumina filler in the resin composition of this embodiment is preferably 10 parts by mass or more and 100 parts by mass or less, more preferably 20 parts by mass or more and 100 parts by mass or less, even more preferably 50 parts by mass or more and 100 parts by mass or less, even more preferably 80 parts by mass or more and 100 parts by mass or less, even more preferably 90 parts by mass or more and 100 parts by mass or less, even more preferably 95 parts by mass or more and 100 parts by mass or less, even more preferably 98 parts by mass or more and even more preferably 100 parts by mass or less, when the content of alumina filler (b) in the resin composition is 100 parts by mass, from the viewpoint of further improving the thermal conductivity of the resin composition.

[0040] From the viewpoint of further improving the thermal conductivity of the resin composition, the alumina filler (b) preferably contains an alumina filler with an α-adsorption rate of 80% or more, more preferably contains an alumina filler with an α-adsorption rate of 90% or more, and even more preferably contains an alumina filler with an α-adsorption rate of 95% or more.

[0041] From the viewpoint of further improving the thermal conductivity of the resin composition, the alumina filler (b) preferably contains two or more alumina fillers with different average particle sizes, and more preferably contains two or three alumina fillers with different average particle sizes.

[0042] Alumina filler (b) preferably comprises alumina filler (b1) and alumina filler (b2). Here, alumina filler (b1) refers to alumina filler with an average particle diameter of 1.0 μm or more, and alumina filler (b2) refers to alumina filler with an average particle diameter of less than 1.0 μm.

[0043] The alumina filler (b1) preferably includes a polyhedral alumina filler from the viewpoint of further improving the thermal conductivity of the resin composition.

[0044] The alumina filler (b2) preferably includes a polyhedral alumina filler from the viewpoint of further improving the thermal conductivity of the resin composition.

[0045] When the alumina filler (b1) contains only one type of alumina filler, the average particle size of the alumina filler (b1) is preferably 1.0 μm to 15.0 μm, more preferably 1.0 μm to 13.0 μm, even more preferably 1.0 μm to 10.0 μm, even more preferably 1.5 μm to 8.0 μm, and even more preferably 2.0 μm to 5.0 μm, from the viewpoint of further improving the thermal conductivity of the resin composition.

[0046] From the viewpoint of further improving the thermal conductivity of the resin composition, the alumina filler (b1) preferably includes alumina filler (b1-1) and alumina filler (b1-2). Here, alumina filler (b1-1) refers to alumina filler with an average particle diameter of 5.0 μm or more, and alumina filler (b1-2) refers to alumina filler with an average particle diameter of 1.0 μm or more and less than 5.0 μm.

[0047] From the viewpoint of further improving the thermal conductivity of the resin composition, the average particle size of the alumina filler (b1-1) is preferably 5.0 μm to 15.0 μm, more preferably 5.0 μm to 13.0 μm, even more preferably 5.0 μm to 10.0 μm, and even more preferably 5.0 μm to 8.0 μm.

[0048] The average particle size of the alumina filler (b1-2) is 1.0 μm or more and less than 5.0 μm, and from the viewpoint of further improving the thermal conductivity of the resin composition, it is preferably 2.0 μm or more and 4.0 μm or less.

[0049] From the viewpoint of further improving the thermal conductivity of the resin composition, the average particle size of the alumina filler (b2) is preferably 0.1 μm or more and less than 1.0 μm, more preferably 0.2 μm or more and 0.9 μm or less, and even more preferably 0.3 μm or more and 0.7 μm or less.

[0050] Here, the average particle diameters of the alumina fillers (b1), (b2), (b1-1), and (b1-2) refer to the values ​​obtained by the following method, respectively. A solution prepared by ultrasonically dispersing alumina filler in a 0.2% by mass sodium hexametaphosphate aqueous solution was used as the measurement sample, and the value at 50% of the volume was measured using a laser diffraction / scattering particle size analyzer. 50 The particle size of the alumina filler is measured and taken as the average particle size of the alumina filler. The concentration of alumina filler in the measurement sample should be adjusted to a concentration that suppresses aggregation of the alumina filler and provides an appropriate laser scattering intensity.

[0051] The mass ratio (b1 / b2) of the content of alumina filler (b1) in the resin composition to the content of alumina filler (b2) in the resin composition of this embodiment is preferably 2.0 to 8.0, more preferably 3.0 to 7.0, and even more preferably 3.5 to 6.0, from the viewpoint of further improving the thermal conductivity of the resin composition.

[0052] The mass ratio (b1-1 / b1-2) of the content of alumina filler (b1-1) in the resin composition to the content of alumina filler (b1-2) in the resin composition of this embodiment is preferably 0.5 to 5.0, more preferably 0.8 to 4.0, and even more preferably 1.0 to 3.5, from the viewpoint of further improving the thermal conductivity of the resin composition.

[0053] The amount of inorganic filler (B) in the resin composition of this embodiment is preferably 80 to 97 parts by mass, more preferably 83 to 95 parts by mass, even more preferably 85 to 93 parts by mass, even more preferably 86 to 92 parts by mass, and even more preferably 87 to 91 parts by mass, when the total amount of nonvolatile components in the resin composition is 100 parts by mass, in order to further improve the adhesion of the resin composition to the copper foil and to further improve the thermal conductivity of the resin composition.

[0054] <Dispersant (C)> The resin composition of this embodiment preferably further comprises a dispersant (C). If the resin composition of this embodiment further contains a dispersant (C), the adhesion of the resin composition to the copper foil can be further improved, and the thermal conductivity of the resin composition can be further improved. The dispersant (C) is not particularly limited as long as it can improve the dispersibility of the inorganic filler (B) in the resin (A), but preferably includes a wetting dispersant.

[0055] The content of the dispersant (C) in the resin composition of this embodiment is preferably 0.01 parts by mass or more and 3.0 parts by mass or less, more preferably 0.05 parts by mass or more and 1.0 part by mass or less, and even more preferably 0.1 parts by mass or more and 0.5 parts by mass or less, when the total content of nonvolatile components in the resin composition is 100 parts by mass.

[0056] <Other ingredients> The resin composition of this embodiment may contain other components as appropriate. Other components may include, for example, at least one selected from the group consisting of coupling agents, leveling agents, curing accelerators, organic solvents, flame retardants, antioxidants, colorants, mold release agents, and stress reduction agents.

[0057] The coupling agent includes, for example, at least one selected from the group consisting of silane coupling agents, titanium coupling agents, zirconium coupling agents, and aluminum coupling agents, and preferably includes a silane coupling agent.

[0058] The content of the coupling agent in the resin composition of this embodiment is preferably 0.01 parts by mass or more and 3.0 parts by mass or less, more preferably 0.05 parts by mass or more and 2.0 parts by mass or less, and even more preferably 0.1 parts by mass or more and 1.0 part by mass or less, when the total content of nonvolatile components in the resin composition is 100 parts by mass.

[0059] The leveling agent includes, for example, at least one selected from the group consisting of polyacrylate-based leveling agents and silicone-based leveling agents, and preferably includes a polyacrylate-based leveling agent.

[0060] The leveling agent content in the resin composition of this embodiment is preferably 0.001 parts by mass or more and 2.0 parts by mass or less, more preferably 0.01 parts by mass or more and 1.0 part by mass or less, and even more preferably 0.05 parts by mass or more and 0.5 parts by mass or less, when the total content of nonvolatile components in the resin composition is 100 parts by mass.

[0061] The curing accelerator includes, for example, at least one selected from the group consisting of imidazoles, tertiary amines, organometallics, and phenols, and preferably includes imidazoles.

[0062] The content of the curing accelerator in the resin composition of this embodiment is preferably 0.001 parts by mass or more and 1.0 part by mass or less, more preferably 0.005 parts by mass or more and 0.5 parts by mass or less, and even more preferably 0.01 parts by mass or more and 0.1 parts by mass or less, when the total content of nonvolatile components in the resin composition is 100 parts by mass.

[0063] The resin composition of this embodiment may contain an organic solvent. When the resin composition of this embodiment contains an organic solvent, a varnish-like resin composition is obtained.

[0064] The organic solvent includes, for example, at least one selected from the group consisting of acetone, methyl ethyl ketone, methyl isobutyl ketone, toluene, ethyl acetate, cyclohexane, heptane, cyclohexane, cyclohexanone, tetrahydrofuran, dimethylformamide, dimethylacetamide, dimethyl sulfoxide, and ethylene glycol.

[0065] When the resin composition of this embodiment is in the form of a varnish, the concentration of solid content (non-volatile components) of the resin composition is preferably 30% by mass or more and 95% by mass or less, more preferably 50% by mass or more and 92% by mass or less, and even more preferably 70% by mass or less and 90% by mass or less, from the viewpoint of further improving the coating properties, etc.

[0066] The total content of resin (A) and inorganic filler (B) in the resin composition of this embodiment is preferably 50 parts by mass or more and 100 parts by mass or less, more preferably 70 parts by mass or more and 100 parts by mass or less, even more preferably 90 parts by mass or more and 100 parts by mass or less, and even more preferably 95 parts by mass or more and 100 parts by mass or less, from the viewpoint of further improving the adhesion of the resin composition to the copper foil and further improving the thermal conductivity of the resin composition, when the total content of nonvolatile components in the resin composition is 100 parts by mass.

[0067] The total content of resin (A) and inorganic filler (B) in the resin composition of this embodiment is preferably 40% to 100% by mass, more preferably 60% to 97% by mass, and even more preferably 80% to 95% by mass, from the viewpoint of further improving the adhesion of the resin composition to the copper foil and further improving the thermal conductivity of the resin composition, when the total content of all components in the resin composition is taken as 100% by mass.

[0068] [Method for producing resin composition] The method for producing the resin composition of this embodiment is not particularly limited, and examples include mixing each component by any method.

[0069] [Uses of resin compositions] The resin composition of this embodiment is a resin composition that can be used as a substrate material for a semiconductor device, and preferably a resin composition for a substrate material for a semiconductor device. The semiconductor device preferably includes a power semiconductor element. Since the resin composition of this embodiment can suppress the temperature rise of the semiconductor device, it can be suitably used in semiconductor devices that generally have high heat dissipation requirements, including power semiconductor elements. Furthermore, the substrate material is preferably a substrate material that can be used in contact with a metal layer, and more preferably a substrate material used in contact with a metal layer.

[0070] [Sheet] The sheet of this embodiment comprises a resin layer formed by the resin composition of this embodiment.

[0071] The curing state of the resin composition constituting the resin layer in this embodiment is not particularly limited and may be uncured, semi-cured, or cured, but is preferably semi-cured or cured, and more preferably semi-cured.

[0072] The thickness of the resin layer in this embodiment is preferably 10 μm to 150 μm, more preferably 15 μm to 90 μm, and even more preferably 15 μm to 80 μm.

[0073] The sheet of this embodiment preferably further comprises a metal layer. The metal layer of this embodiment preferably comes into direct contact with the resin layer of this embodiment.

[0074] The metal layer in this embodiment is composed of at least one selected from the group consisting of, for example, metal foil, metal paste, sintered metal paste, and porous metal, and is preferably composed of metal foil.

[0075] The metal constituting the metal layer of this embodiment includes, for example, at least one selected from the group consisting of copper, aluminum, silver, and gold, and preferably includes copper.

[0076] The metal layer in this embodiment is preferably made of copper foil. Examples of copper foils include electrolytic copper foil and rolled copper foil.

[0077] The thickness of the metal layer in this embodiment is preferably 1 μm to 20 μm, more preferably 1 μm to 10 μm, and even more preferably 1 μm to 5 μm.

[0078] The sheet of this embodiment may further comprise a base film. The sheet of this embodiment preferably comprises a resin layer on a base film. For example, a resin film can be used as the base film.

[0079] The sheet of this embodiment may further comprise other layers.

[0080] The method for manufacturing the sheet of this embodiment is not particularly limited, and examples include a method of forming a resin layer by applying a varnish-like resin composition of this embodiment onto a base film and drying it.

[0081] [Prepreg] The prepreg of this embodiment comprises the resin composition of this embodiment and a fibrous substrate. Preferably, the prepreg of this embodiment includes the fibrous substrate within the resin composition.

[0082] The curing state of the resin composition contained in the prepreg of this embodiment is not particularly limited and may be uncured, semi-cured, or cured, but is preferably semi-cured or cured, and more preferably semi-cured.

[0083] The fibrous base material in this embodiment is not particularly limited and may include woven fabric or nonwoven fabric, but from the viewpoint of further improving the mechanical strength of the prepreg, it preferably includes woven fabric.

[0084] The fibers constituting the fibrous base material of this embodiment are not particularly limited and may be inorganic fibers or organic fibers.

[0085] The fibrous substrate of this embodiment preferably includes at least one selected from the group consisting of glass fiber substrates, polyamide resin fiber substrates, polyester resin fiber substrates, polyimide resin fiber substrates, and fluororesin fiber substrates, and more preferably includes a glass fiber substrate from the viewpoint of further improving the mechanical strength and heat resistance of the prepreg. From the viewpoint of further improving the mechanical strength of the prepreg, the glass fiber substrate preferably includes a glass fiber cloth.

[0086] The thickness of the fibrous substrate in this embodiment is preferably 5 μm to 150 μm, more preferably 10 μm to 100 μm, and even more preferably 12 μm to 90 μm.

[0087] The thickness of the prepreg in this embodiment is preferably 5 μm to 150 μm, more preferably 10 μm to 100 μm, and even more preferably 12 μm to 90 μm.

[0088] The method for manufacturing the prepreg in this embodiment is not particularly limited and includes, for example, a method of immersing a fibrous substrate in a varnish-like resin composition, or a method of applying a varnish-like resin composition to a fibrous substrate.

[0089] [Printed circuit board] The printed circuit board of this embodiment comprises an insulating resin layer containing the resin composition of this embodiment and a circuit layer on the insulating resin layer.

[0090] The printed circuit board in this embodiment is not particularly limited and may be a single-sided printed circuit board, a double-sided printed circuit board, or a multilayer printed circuit board.

[0091] The insulating resin layer of this embodiment comprises the resin composition of this embodiment. The insulating resin layer of this embodiment may further contain a fibrous substrate or the like. The insulating resin layer of this embodiment is preferably composed of a cured product made from the resin composition of this embodiment, or a cured body obtained by curing the prepreg of this embodiment.

[0092] The circuit layer in this embodiment is not particularly limited, but is preferably made of metal foil, and more preferably of copper foil.

[0093] The printed circuit board of this embodiment may also include other components such as a solder resist layer as appropriate.

[0094] [Semiconductor device] The semiconductor device of this embodiment comprises a semiconductor element and an insulating resin layer containing the resin composition of this embodiment.

[0095] The insulating resin layer in the semiconductor device of this embodiment is synonymous with the insulating resin layer in the printed circuit board of this embodiment.

[0096] The semiconductor device of this embodiment preferably comprises a semiconductor element and a printed circuit board of this embodiment. The semiconductor device of this embodiment may be a semiconductor device comprising a printed circuit board and semiconductor elements mounted on the circuit layer of the printed circuit board, or it may be a semiconductor device comprising a printed circuit board and semiconductor elements embedded in the printed circuit board.

[0097] The semiconductor device preferably includes a power semiconductor device.

[0098] The semiconductor device of this embodiment may also include other components such as solder bumps and sealing material layers as appropriate.

[0099] The embodiments of the present invention have been described above, but these are merely examples, and various other configurations can also be adopted. Furthermore, the present invention is not limited to the embodiments described above, and any modifications, improvements, etc., that can achieve the objectives of the present invention are included in the present invention. [Examples]

[0100] The embodiment will be described in detail below based on examples and comparative examples. However, this embodiment is not limited in any way to the descriptions of these examples.

[0101] First, let's explain the ingredients listed in Table 1.

[0102] <Resin (A)> • Epoxy resin 1 (manufactured by DIC Corporation, product name: EPICLON 830-S, bisphenol F type epoxy resin) • Epoxy resin 2 (manufactured by DIC Corporation, product name: EPICLON EXA-850CRP, bisphenol A type epoxy resin, epoxy equivalent 173 g / eq, liquid at room temperature) • Epoxy resin 3 (manufactured by DIC Corporation, product name: EPICLON HP-4710, tetrafunctional naphthalene-type epoxy resin) • Epoxy resin 4 (manufactured by DIC Corporation, product name: HP-7241, triphenylmethane type epoxy resin, epoxy equivalent 170 g / eq) • Phenoxy resin 1 (manufactured by Mitsubishi Chemical Corporation, product name: YX6900BH45, modified biphenol type epoxy resin) • Phenolic resin 1 (manufactured by Shikoku Chemicals, Inc., Pd-type benzoxazine, in the following general formula (b), X 2 Benzoxazine with -CH2- group, 68% by mass of phenol resin solution (solvent: cyclohexanone)

[0103] [ka]

[0104] • Cyanate resin 1 (manufactured by Arxada, product name: Primaset PT-30, 90% by mass of cyanate resin 1 solution (solvent: methyl isobutyl ketone (hereinafter also referred to as MIBK)))

[0105] <Inorganic filler (B)> • Alumina Filler 1 (manufactured by Sumitomo Chemical Co., Ltd., product name: Advanced Alumina AA-5, polyhedral alumina filler, average particle size: 6.6 μm, α-alumina single crystal particles, α-gelatinization rate 95% or higher) • Alumina Filler 2 (manufactured by Sumitomo Chemical Co., Ltd., product name: Advanced Alumina AA-3, polyhedral alumina filler, average particle size: 3.5 μm, α-alumina single crystal particles, α-gelatinization rate 95% or higher) • Alumina Filler 3 (manufactured by Sumitomo Chemical Co., Ltd., product name: Advanced Alumina AA-04, polyhedral alumina filler, average particle size: 0.5 μm, α-alumina single crystal particles, α-gelatinization rate of 95% or more, 60% by mass alumina filler 3 solution (solvent: mixed solvent of cyclohexanone and methyl isobutyl ketone)) • Alumina Filler 4 (manufactured by Denka Co., Ltd., product name: DAW-07, spherical alumina filler, average particle size: 11.4 μm)

[0106] <Dispersant (C)> • Dispersant 1 (Manufactured by BYK, Product name: BYK-W903, Wetting dispersant) • Dispersant 2 (Manufactured by BYK, Product name: BYK-W 9010, Wetting dispersant)

[0107] <Other> • Coupling agent 1 (manufactured by Shin-Etsu Chemical Co., Ltd., product name: KBM-573, silane coupling agent) • Leveling agent 1 (manufactured by BYK, product name: BYK-361N, polyacrylate-based leveling agent, 80% by mass of leveling agent 1 solution (solvent: MIBK)) • Hardening accelerator 1 (manufactured by Shikoku Chemicals, Inc., 2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole) • Curing accelerator 2 (manufactured by Shikoku Chemicals, Inc., product name: 2P4MHZ-PW2-phenyl-4-methyl-5-hydroxymethylimidazole) • Organic solvent 1 (cyclohexanone)

[0108] [Examples 1-7 and Comparative Examples 1-2] (Preparation of resin compositions) Each component formulated according to Table 1 was stirred at room temperature to obtain the varnish-like resin compositions of Examples 1-7 and Comparative Examples 1-2, respectively. Here, the mixing ratios in Table 1 indicate the parts by mass of the solid content (non-volatile components) of each component. That is, for example, the part by mass of Alumina Filler 3 is listed, not the part by mass of a 60% Alumina Filler 3 solution.

[0109] (Creating the sheet) A PET film with a thickness of 38 μm was coated with the varnish-like resin compositions of Examples 1-7 and Comparative Examples 1-2 obtained in the above (Preparation of Resin Compositions) so that the thickness after drying was 30 μm. The film was then heated at 130°C for 2 minutes to obtain the sheets of Examples 1-7 and Comparative Examples 1-2, respectively. Hereinafter, the layer formed by the resin composition in the sheet will also be referred to as the resin layer.

[0110] [Measurement and Evaluation] <Average particle size of alumina filler> A solution prepared by ultrasonically dispersing alumina filler in a 0.2% by mass sodium hexametaphosphate aqueous solution was used as the measurement sample. A laser diffraction / scattering particle size analyzer (MICROTRAC MT3300) was used to measure the cumulative value at 50% of the volume (D 50 The average particle size of the alumina filler was determined by measuring the particle size. The concentration of alumina filler in the measurement sample was adjusted to a concentration that suppresses alumina filler aggregation while maintaining appropriate laser scattering intensity.

[0111] <Adhesion of resin composition to copper foil> The resin layer of each example and comparative example sheet was brought into contact with the roughened surface (Ra: 0.7 μm, Rz: 1.3 μm) of copper foil (manufactured by Mitsui Mining & Smelting Co., Ltd., product name: MT18FL, thickness: 1.5 μm), and laminated using a vacuum laminating machine (manufactured by Japan Steel Works, Ltd.) under the conditions of temperature: 100°C, pressure: 0.6 MPa, and time: 15 seconds to obtain a laminate a with a layer structure of "PET film / resin layer / copper foil". The PET films of the two laminates a were peeled off, and the resin layers of laminate a were placed in contact with both sides of the core substrate (a cured prepreg made of glass cloth impregnated with epoxy resin, thickness: 60 μm). The laminates were then heated under pressure using a press machine at a temperature of 200°C, a pressure of 2 MPa, and a time of 60 minutes to cure the resin layers. The resulting laminate b has a layer structure of "copper foil / resin layer / core substrate / resin layer / copper foil". Copper plating was performed on both sides of laminate b under the conditions of current: 2A, time: 36 minutes, to form copper plating layers with a thickness of 18μm on each side. A copper-plated laminate b was cut into pieces 10 mm wide and 150 mm long to serve as test specimens. To initiate delamination during the peel test, one end face in the longitudinal direction of the test specimen was slightly heated with a gas burner, and a small portion of the copper foil was peeled off with tweezers. The other end face in the longitudinal direction of the test specimen, where the copper foil had not been peeled off, was fixed in a vise for 20 minutes. A 90° peel test was performed using an Autograph (manufactured by Shimadzu Corporation, product name: AGX-Plus) at a speed of 50 mm / min, peeling off a copper foil with a copper plating layer formed on one side of the test specimen. The minimum peeling force in the stroke range of 30 mm to 100 mm was defined as the adhesion force [N / mm] of the resin composition to the copper foil. Table 1 shows the measurement results of the adhesion strength [N / mm] between the resin composition of each example and each comparative example and the copper foil.

[0112] <Thermal conductivity of resin compositions> Two sheets of each example and comparative example were prepared and laminated using a vacuum laminating machine with the resin layers in contact with each other under the conditions of temperature: 100°C, pressure: 0.6 MPa, and time: 15 seconds to obtain laminate 1 with a resin layer thickness of 60 μm. The same operation was repeated twice to obtain a total of three laminates 1. Next, the PET film on one side of two laminates 1 was peeled off, and the resin layers were in contact with each other, and laminated under the same conditions as above to obtain laminate 2 with a resin layer thickness of 120 μm. Next, the PET film on one side of laminates 1 and laminate 2 was peeled off, and the resin layers were in contact with each other, and laminated under the same conditions as above to obtain laminate 3 with a resin layer thickness of 180 μm. The laminate 3 was heated under pressure using a press machine at a temperature of 200°C, a pressure of 2 MPa, and a time of 60 minutes to cure the resin layer. The PET films on both sides were peeled off from the cured laminate 3 to obtain a cured resin layer. A section of the cured material with a uniform thickness of approximately 180 μm was selected and cut into 11 mm squares using a laser cutting machine. Then, both sides of the cured material were coated with black spray paint to obtain the measurement sample. The thermal diffusivity of the measurement sample was determined using a thermal diffusivity analyzer (NETZSCH Japan Co., Ltd.) by the laser flash method under conditions of 25°C. The specific gravity of the measurement sample was determined by the water displacement method. The specific heat of the measured sample was determined by the DSC method. Using the thermal diffusivity, specific gravity, and specific heat values ​​obtained from the measurement samples described above, the value obtained from the formula thermal conductivity = thermal diffusivity × specific gravity × specific heat was defined as the thermal conductivity [W / m·K] of the resin composition. Table 1 shows the measurement results of the thermal conductivity [W / m·K] of the resin compositions for each example and each comparative example.

[0113] <Solder heat resistance test> (Solder heat resistance test 1) Laminate b was prepared using the same method as described above for the adhesion strength of the resin composition to the copper foil, and used as a test sample. The test sample was cut to a width of 5 cm, mask tape was applied to the center 3 cm wide, and then etching was performed to remove the copper foil at both ends where the mask tape was not applied. Next, the test sample was cut to a length of 5 cm, and the test sample was immersed in a solder bath at 260°C for 30 seconds. The test sample removed from the solder bath was used as the observation sample for solder heat resistance test 1.

[0114] (Solder heat resistance test 2) Laminate b was prepared using the same method as described above for the adhesion strength of the resin composition to the copper foil, and used as a test sample. The test sample was cut to a width of 5 cm, mask tape was applied to the center section with a width of 3 cm, and then etching was performed to remove the copper foil at both ends where the mask tape was not applied. Next, the test sample was boiled at 100°C for 2 hours. Then, the test sample was cut to a length of 5 cm and immersed in a solder bath at 260°C for 30 seconds. The test sample removed from the solder bath was used as the observation sample for solder heat resistance test 2. In other words, Solder Heat Resistance Test 2 is a test in which the test sample was boiled before being immersed in the solder bath, and therefore it evaluates heat resistance under more severe conditions than Solder Heat Resistance Test 1.

[0115] The blistering and delamination between the copper foil / resin layers of the observation samples for solder heat resistance tests 1 and 2 were visually observed. The test results for solder heat resistance tests 1 and 2 were evaluated according to the following evaluation criteria. The evaluation results for each example and comparative example are shown in Table 1. A: No swelling or peeling was observed. B: Some peeling was observed. C: Blistering and peeling were observed.

[0116] <Temperature test> Using Ansys Workbench (manufactured by Ansys), the chip temperature under the following conditions was simulated. The chip temperatures obtained from the simulation are shown in Table 1. It can be evaluated that the lower the chip temperature, the more the temperature rise of the semiconductor device can be suppressed. Structure: A structure in which a chip measuring 10.25 mm in width, 10.25 mm in length, and 200 μm in thickness is mounted on a laminate consisting of three layers of resin compositions, each of which is 14.75 mm wide, 14.75 mm long, and 25 μm thick. The chip is mounted in the center of the laminate. Chip heat output: 0.25W Heat transfer coefficient: 20 W / m·K Thermal conductivity: Use the values ​​from each example and each comparative example. Heat dissipation conditions: Heat is dissipated from the side of the structure opposite to the chip.

[0117] [Table 1]

[0118] Table 1 shows that each embodiment performs better in the solder heat resistance test than Comparative Example 1, which performs worse. Furthermore, each embodiment has a lower chip temperature in the temperature test than Comparative Example 2, which performs worse, indicating better results in the temperature test. Based on the above, it can be said that the resin composition of this embodiment can suppress the temperature rise of semiconductor devices and improve the solder heat resistance of the resulting substrate material.

[0119] Furthermore, it can be understood that Examples 1-6, which have a thermal conductivity of 2.00 W / m·K or higher, exhibited lower chip temperatures in the temperature test and better results in the temperature test than Example 7, which has a thermal conductivity of 1.20 W / m·K or higher and less than 2.00 W / m·K. In other words, a resin composition with a thermal conductivity of 2.00 W / m·K or higher can be said to be able to more effectively suppress the temperature rise of semiconductor devices.

Claims

1. A resin composition that can be used as a substrate material for semiconductor devices, It comprises resin (A) and inorganic filler (B), The inorganic filler (B) includes an alumina filler (b), The content of the alumina filler (b) in the resin composition is 50 parts by mass or more and 100 parts by mass or less, when the content of the inorganic filler (B) in the resin composition is 100 parts by mass. The alumina filler (b) includes a polyhedral alumina filler, The adhesion force of the resin composition to the copper foil, calculated by the following [Method 1], is 0.10 N / mm or more. A resin composition having a thermal conductivity of 1.20 W / m·K or higher, as calculated by the following [Method 2]. [Method 1] A resin layer made of the resin composition with a thickness of 30 μm is laminated to the roughened surface (Ra: 0.7 μm, Rz: 1.3 μm surface) of a copper foil with a thickness of 1.5 μm using a vacuum laminating machine at a temperature of 100°C, a pressure of 0.6 MPa, and a time of 15 seconds to produce a laminate a comprising at least the resin layer and the copper foil. Then, two of the laminates a are prepared, and the resin layers of the laminates a are pressed together using a press machine at a temperature of 200°C, a pressure of 2 MPa, and a time of 60 minutes so that both sides of the core substrate and the resin layer of the laminate a are in contact with each other, thereby curing the resin layers. A laminate b is prepared comprising copper foil, the resin layer, the core substrate, the resin layer, and the copper foil in this order. Next, copper plating layers are formed on both sides of the laminate b to a thickness of 18 μm. Then, the copper-plated laminate b is cut into pieces with a width of 10 mm and a length of 150 mm to serve as test pieces. Using an autograph, a 90° peel test is performed at a speed of 50 mm / min to peel off the copper foil on one side of the test piece, and the minimum peeling force in the stroke of 30 mm to 100 mm is defined as the adhesion force of the resin composition to the copper foil. [Method 2] The thermal diffusivity, specific gravity, and specific heat of a cured product made from the resin composition with a thickness of 180 μm, which has been cured by pressurized heating under the conditions of temperature: 200°C, pressure: 2 MPa, and time: 60 minutes, are determined, and the value obtained from the formula thermal conductivity = thermal diffusivity × specific gravity × specific heat is defined as the thermal conductivity of the resin composition.

2. The resin composition according to claim 1, wherein the thermal conductivity of the resin composition calculated by the above [Method 2] is 2.00 W / m·K or more.

3. The alumina filler (b) includes alumina filler (b1) and alumina filler (b2), The average particle size of the alumina filler (b1) is 1.0 μm or more and 15.0 μm or less. The resin composition according to claim 1 or 2, wherein the average particle size of the alumina filler (b2) is 0.1 μm or more and less than 1.0 μm.

4. The alumina filler (b1) includes alumina filler (b1-1) and alumina filler (b1-2), The average particle size of the alumina filler (b1-1) is 5.0 μm or more and 15.0 μm or less. The resin composition according to claim 3, wherein the average particle size of the alumina filler (b1-2) is 1.0 μm or more and less than 5.0 μm.

5. The resin composition according to claim 3, wherein the alumina filler (b1) includes a polyhedral alumina filler.

6. The resin composition according to claim 1 or 2, wherein the alumina filler (b) comprises an alumina filler with an α-conversion rate of 95% or more.

7. The resin composition according to claim 1 or 2, wherein the resin (A) comprises an epoxy resin.

8. The resin composition according to claim 1 or 2, wherein the resin (A) comprises a phenolic resin.

9. The resin composition according to claim 1 or 2, wherein the resin (A) comprises a cyanate resin.

10. The resin composition according to claim 1 or 2, wherein the resin (A) does not contain a phenoxy resin, or the content of the phenoxy resin in the resin composition is less than 20 parts by mass when the content of the resin (A) in the resin composition is 100 parts by mass.

11. The resin composition according to claim 1 or 2, further comprising a dispersant (C).

12. The resin composition according to claim 1 or 2, wherein the substrate material can be used in contact with a metal layer.

13. The resin composition according to claim 1 or 2, wherein the semiconductor device includes a power semiconductor element.

14. A sheet comprising a resin layer formed by the resin composition according to claim 1 or 2.

15. The sheet according to claim 14, wherein the thickness of the resin layer is 10 μm or more and 150 μm or less.

16. The sheet according to claim 14, further comprising a metal layer.

17. A prepreg comprising the resin composition according to claim 1 or 2 and a fiber substrate.

18. The prepreg according to claim 17, wherein the fiber substrate includes at least one selected from the group consisting of a glass fiber substrate, a polyamide resin fiber substrate, a polyester resin fiber substrate, a polyimide resin fiber substrate, and a fluororesin fiber substrate.

19. A printed wiring board comprising an insulating resin layer containing the resin composition according to claim 1 or 2, and a circuit layer on the insulating resin layer.

20. A semiconductor device comprising a semiconductor element and an insulating resin layer containing the resin composition described in claim 1 or 2.

21. The semiconductor device according to claim 20, wherein the semiconductor element includes a power semiconductor element.

Images