Light-emitting device

Abstract

We provide an active-matrix display device with threshold correction capabilities and a simple circuit configuration. do. [Solution] In the circuit shown in Figure 1, according to the timing chart shown in Figure 3, the first By inputting pulses to the gate signal line 101 and the second gate signal line 102, the transistor of the circuit The system is switched on and off. As a result, the potential difference between the third node N3 and the second node N2 becomes the fourth node. Regardless of the threshold of the transistor 112, the potential V of the data line 103 Data and the second wiring 10 Since it is determined solely by the potential V2 of 5, the desired current is to flow through the display element 107. It is possible.

Description

[Technical Field]

[0001] The present invention relates to an active matrix type display device, particularly a display device having diode characteristics. This relates to an active-matrix display device using a display element. The display has diode characteristics. Examples of such elements include organic electroluminescent (EL) diodes and light-emitting diodes. This includes, but is not limited to, diode characteristics or voltage-current characteristics. It exhibits characteristics similar to diode characteristics, and consequently, light emission, transmittance, reflectance, color tone, and saturation. This refers to a device that undergoes changes such as those mentioned above, resulting in altered optical properties. Hereafter, it will also simply be referred to as a display element. [Background technology]

[0002] A typical example of an electro-optic element with diode characteristics is an organic EL element. EL elements are formed in a matrix on a substrate, and each is controlled by a transistor to create an image. Active-matrix organic EL display devices that display [this] are known.

[0003] The transistors used in active-matrix organic EL display devices have a limited temperature range. Due to the need to form it over a large area, amorphous silicon, polysilicon, and acid are used in the semiconductor layer. Ionized semiconductors and the like are used (see, for example, Patent Documents 1 to 3).

[0004] Transistors using such semiconductor materials generally exhibit large threshold voltage variations. In EL display devices, the degree of light emission is controlled by the current flowing through the organic EL element, thereby obtaining gradation. In active-matrix organic EL display devices, the current flowing through the organic EL elements is controlled. It is controlled by a transistor, but the current value also depends on the threshold of the transistor, so When the threshold voltage of a transistor varies, the value of current flowing through the organic EL element also varies, resulting in non-uniform display .

[0005] In order to suppress display defects caused by such threshold voltage variations, techniques for performing threshold correction using a plurality of transistors are known (see Patent Document 2 and Patent Document 3). In Patent Document 2 and Patent Document 3, there are disclosed examples where a threshold correction circuit is configured with only N-channel transistors, only P-channel transistors, or a combination of N-channel transistors and P-channel transistors .

PRIOR ART DOCUMENTS

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problem to be Solved by the Invention

[0007] By the way, depending on available semiconductor materials, practical P-channel transistors cannot be obtained in some cases. Conversely, N-channel transistors cannot be obtained in other cases. In addition, due to problems related to the manufacturing method and structure of display elements, a transistor may be required to be connected to the positive electrode of the display element. Conversely, a transistor may be required to be connected to the negative electrode of the display element in some cases.

[0008] For example, when only N-channel transistors can be used, and the transistor is required to be connected to the display element's If connection to the positive electrode is required, the method described in Patent Document 2 can be used. No. In such cases, for example, a circuit like the one described in Figure 39 of Patent Document 3 can be used. It was necessary to use it.

[0009] Figure 2 shows the circuit disclosed in Patent Document 3. Figure 2 shows one dot (constituting a display device). The smallest unit, usually consisting of one pixel made up of multiple primary color dots, requires a circuit. The first gate signal line 201, the second gate signal line 202, the third gate signal line 203, Gate 4 signal line 204, Gate 5 signal line 205, data line 206, Wiring 1 207, In addition to the nine wires, including the second wire 208 and the third wire 209 (which are formed on the element) The light-emitting element 210, capacitor 211, first transistor 212, second transistor 2 13, 3rd transistor 214, 4th transistor 215, 5th transistor 216, This dot matrix uses seven transistors: 6 transistors 217 and 7 transistors 218. It is.

[0010] Needless to say, increasing the number of wires and components is undesirable because it reduces manufacturing yield. One aspect of the present invention aims to propose a simpler circuit configuration. One aspect of the invention aims to propose a method for driving the above-mentioned circuit.

[0011] Furthermore, the description of these problems does not preclude the existence of other problems. The embodiment does not need to solve all of these problems. Other problems are addressed in the specification. This will become clear from the description in the drawings, claims, etc., and the specification, drawings, claims From the description of the above and other items, problems other than these can be extracted. [Means for Solving the Problems]

[0012] A configuration that can solve the above problems is shown below. Prior to that, the terms used in this specification are described herein. In this specification and the like, a transistor is an element having at least three terminals including a gate, a drain, and a sour ce. The transistor includes a drain (a drain terminal , a drain region, or a drain electrode) and a source (a source terminal, a source region, or a source electr ode) with a channel region therebetween, and current can flow through the drain, the channel region, and the source through the above components.

[0013] Here, the source and the drain change depending on the structure of the transistor, operating conditions, or the like , making it difficult to limit which one is the source or the drain. Therefore, a portion functioning as a source and a portion functioning as a drain are not referred to as a source or a drain; instead , one of the source and the drain is referred to as a first electrode, and the other of the source and the drain is referred to as a second electr ode in some cases.

[0014] Note that for two-terminal elements such as capacitors and diodes, one electrode is also referred to as a first electrode and the other electrode is referred to as a second electrode in some cases. In this case, even when there is a distinction between a positive electrode and a negative electrode in a capacitor or a diode , this notation does not indicate which one is the first electrode . However, when it is necessary to specify the positive electrode and the negative electrode due to the nature of the circuit, this will be separately described in some cases.

[0015] Note that in this specification and the like, terms such as first, second, and third are used for various elements, members, regions, It is used to describe layers and areas in a way that distinguishes them from other things. Therefore, the first, second, third, etc. No term limits the number of elements, components, areas, layers, zones, etc. Furthermore, examples... For example, "the first" can be replaced with "the second" or "the third," etc.

[0016] Furthermore, in this specification, etc., when it is explicitly stated that X and Y are connected, X When X and Y are electrically connected, and when X and Y are functionally connected, This includes the case where X and Y are directly connected. Here, X and Y are objects (for example) For example, it is assumed to be a device, element, circuit, wiring, electrode, terminal, conductive film, layer, etc. Therefore And, not limited to predetermined connection relationships, for example, connection relationships shown in a diagram or text, but also including diagrams or This includes relationships other than those explicitly stated in the text.

[0017] One example of a case where X and Y are electrically connected is the ability to make an electrical connection between X and Y possible. Elements such as switches, transistors, capacitive elements, inductors, resistive elements, and dies. It is possible for one or more Odes (such as Odes) to be connected between X and Y.

[0018] Furthermore, if it is explicitly stated that X and Y are electrically connected, then X and Y are electrically connected. When they are directly connected (that is, when X and Y are connected with another element or circuit in between) (when they are separated) and when X and Y are functionally connected (i.e., when there is no separate connection between X and Y) (When they are functionally connected with a circuit in between) and when X and Y are directly connected ( In other words, this includes the case where X and Y are connected without another element or circuit in between. It shall be considered as follows: In other words, when explicitly stating that they are electrically connected, simply means connected. This is equivalent to the case where it is explicitly stated that it is done.

[0019] In this specification, active elements (such as transistors) and passive elements (such as capacitors) are used. For all terminals that such as (etc.) have, even without specifying the destination of the connection, a person skilled in the art can understand them. In some cases, it may be possible to constitute one aspect of the invention. In particular, in cases where there are multiple connection destinations for the terminals. When possible, it is not necessary to limit the connection destination of that terminal to a specific location. To specify the connection destination only for some of the terminals that active elements, passive elements, etc. In some cases, this may constitute one aspect of the invention.

[0020] Furthermore, in this specification, etc., if a certain circuit is specified, then at least the connection destination is identified, and this applies to our business. If you are an expert, you may be able to identify the invention. Or, regarding a certain circuit, However, if the function is specified, a person skilled in the art may be able to specify the invention.

[0021] Therefore, for a given circuit, even without specifying its function, if the connection destination is specified, one can identify the invention. This is disclosed as an embodiment and can constitute one aspect of the invention. In a given circuit, even without specifying the connection destination, if the function is specified, it can be considered one aspect of the invention. This is disclosed and can constitute one aspect of the invention.

[0022] Furthermore, in this specification and other documents, where explicitly stated as singular, the singular is used. It is desirable to have one. However, it is not limited to this, and there can be multiple. However, for items explicitly listed as plural, it is preferable that they be plural. And it is not limited to this; it can also be singular.

[0023] In this specification, pixels may be arranged (arranged) in a matrix. Here, when we say that pixels are arranged (arranged) in a matrix, it means that they are arranged in either the vertical or horizontal direction. And when pixels are arranged in a straight line, or on a jagged line This includes cases where full color display is possible using, for example, three color elements (e.g., RGB). If we were to do this, in the case of a striped arrangement, the dots of the three color elements would be in a delta arrangement. This includes cases where the arrangement is fixed, Bayer-arranged, or mosaic-arranged. This shall be the case. Furthermore, the size of the display area for each dot of the color element may differ. This makes it possible to reduce power consumption or extend the lifespan of the display elements.

[0024] One aspect of the present invention comprises a first gate signal line, a second gate signal line, a data line, and a first transistor. and the second transistor, the third transistor, the fourth transistor, the fifth transistor, and the sixth transistor It has a transistor, a capacitor, and a display element, and the gate of the first transistor is the first gate signal The first electrode of the first transistor is connected to the data line, and the second electrode of the first transistor is connected to the data line. The two electrodes are connected to the second electrode of the fourth transistor and the first electrode of the fifth transistor, The gates of the two transistors are connected to the first gate signal line, and the first electrode of the second transistor is connected to the first gate signal line. The second electrode of the third transistor and the first electrode of the fourth transistor are connected, and the second transistor The second electrode of the fourth transistor is connected to the gate of the fourth transistor and the first electrode of the capacitor, and the third transistor The gate of the 4th transistor is connected to the 2nd gate signal line, and the 2nd electrode of the 4th transistor is connected to the 5th transistor The first electrode of the 5th transistor is connected, and the gate of the 5th transistor is connected to the second gate signal line. The second electrode of the transistor is connected to the first electrode of the display element, the second electrode of the capacitor, and the sixth transistor. The first electrode of the zista is connected, and the gate of the sixth transistor is connected to the first gate signal line. It is an active-matrix display device with a circuit.

[0025] Furthermore, the number of transistors is not limited to six; there may be seven or more. The capacitors and display elements are not limited to one each; there may be two or more of each. Furthermore, both may have two or more. Also, structurally, capacitors and display elements may be in series or Components arranged in parallel will be considered as a single capacitor and a single display element.

[0026] Here, transistors 1 through 6 all have the same conductivity type, and the first transistor If the zista or sixth transistor is of the N-channel type, then the first electrode of the display element is the positive electrode. The second electrode is the negative electrode. Also, the first to sixth transistors are P-channel type. In that case, the first electrode of the display element is the negative electrode, and the second electrode is the positive electrode.

[0027] Furthermore, if the first to sixth transistors are N-channel type, the third transistor The potential of the first electrode of the transistor is the potential of the second electrode of the sixth transistor, and the potential of the second electrode of the display element. If the potential is higher than that, and the first to sixth transistors are P-channel type, then the third The potential of the first electrode of the transistor is the potential of the second electrode of the sixth transistor, and the display element It is lower than the potential of the second electrode.

[0028] Furthermore, when the first to sixth transistors are N-channel type, the sixth transistor The potential of the second electrode of the sta may be lower than or equal to the potential of the negative electrode of the display element, and the sixth electrode The potential of the second electrode of the transistor may be higher than the potential of the negative electrode of the display element, but the sixth transistor It is preferable that the potential difference between the second electrode of the sta and the negative electrode of the display element is smaller than the threshold of the display element. It's nice.

[0029] Furthermore, the absolute value of the difference between the potential of the first electrode of the third transistor and the potential of the second electrode of the display element is Preferably, it is 5 times or more the absolute value of the threshold of the fourth transistor.

[0030] Furthermore, in one aspect of the present invention, in the above circuit, the pulse input to the second gate signal line is The Acti is characterized by having a period of overlap with the pulse input to the first gate signal line. This is a method for driving a matrix-type display device.

[0031] Furthermore, one aspect of the present invention includes a display element, a capacitor, a data line, and a first gate signal line. Multiple transistors whose gates are connected to the second gate signal line and the first gate signal line. A transistor (transistor A) and multiple transistors (transistors) whose gates are connected to the second gate signal line. Transistor B) and the first electrode of transistor A and the second electrode of transistor B are connected to each other. The electrodes are connected, and the gate of transistor A is in contact with the second electrode of transistor A and the first electrode of capacitor. Next, the other first electrode of transistor B and the other second electrode of transistor A are connected to the second electrode. An active matrix having a circuit with a transistor (transistor C) to which it is connected. It is a type of display device.

[0032] Here, the other first electrode of transistor A may be connected to the data line. The other second electrode of B may be connected to the first electrode of the display element. Also, transistors A to T The transistors C may all be N-channel type. Furthermore, the first electrode of transistor C The position may be higher than the potential of the second electrode of the display element.

[0033] Furthermore, in one aspect of the present invention, in the above circuit, transistor A and transistor B are The first period is when both are on, and the second period is when transistor A is on and transistor B is off. The third period in which both transistor A and transistor B are off, and the transistor An active transistor characterized by having a fourth period in which A is off and transistor B is on. This is a method for driving a TRIX-type display device.

[0034] Here, after the first period, there is the second period, after the second period, there is the third period, and after the third period, there is the fourth period. It is preferable that the first period follows the fourth period. Also, it is preferable that the first period and the third period are equal. It may be set to make it worse. [Effects of the Invention]

[0035] The above configuration determines the number of wires and elements (transistors) required for each pixel (or dot). This can reduce the number of gate signal lines. For example, compared to the example in Figure 2, the number of gate signal lines is reduced by 3 to 2. The gate signal line requires a pulse input, so a drive circuit for that is also necessary. However, if the number of gate signal lines decreases, the drive circuit for them also becomes unnecessary, and as a result, power consumption decreases. Power consumption can be reduced. Furthermore, fewer wires are advantageous for increasing integration density.

[0036] In particular, wiring other than data lines where potential fluctuations are required (i.e., near the gate of a transistor) The number of connecting wires is 5 in Figure 2, but in this invention it can be 2. Since fluctuations lead to increased power consumption, reducing the wiring that requires potential fluctuations will reduce power consumption. It can be reduced.

[0037] Despite this simplified configuration, the transistor threshold is the same as in conventional examples. Variations can be corrected. Also, displays whose display characteristics deteriorate over time with use. In the case of devices (for example, organic EL elements and light-emitting diodes), it is also necessary to compensate for their degradation. can. [Brief explanation of the drawing]

[0038] [Figure 1] This figure illustrates an example of a circuit for a display device according to one aspect of the present invention. [Figure 2] This diagram illustrates an example of a conventional display device circuit. [Figure 3] This figure illustrates an example of a driving method for a display device according to one aspect of the present invention. [Figure 4] This figure illustrates an example of a driving method for a display device according to one aspect of the present invention. [Figure 5] This is a top view illustrating an example of a display device according to one aspect of the present invention. [Figure 6] This is a cross-sectional process diagram illustrating an example of the manufacturing process for a display device according to one embodiment of the present invention. [Figure 7] This is a cross-sectional process diagram illustrating an example of the manufacturing process for a display device according to one embodiment of the present invention. [Figure 8] This is a diagram illustrating an electronic device that uses a display device. [Modes for carrying out the invention]

[0039] The embodiments will be described below with reference to the drawings. However, the embodiments may differ in many ways. It is possible to implement it in any manner, and without deviating from its purpose and scope, its form and Those skilled in the art will readily understand that the details can be modified in various ways. Therefore, the present invention is The following descriptions of embodiments are not to be interpreted as being limited to the following.

[0040] Furthermore, in the figures, the size, layer thickness, or area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0041] Note that the figure is a schematic representation of an ideal example and is not limited to the shapes or values ​​shown in the figure. It cannot be fixed. For example, variations in shape due to manufacturing technology, variations in shape due to errors, noise Variations in signals, voltages, or currents, or signals, voltages, due to timing differences. Alternatively, it may include variations in current, etc.

[0042] Furthermore, technical terms may be used to describe specific embodiments or examples. There are many such cases. However, one aspect of the invention is not to be interpreted in a way that is limited by technical terms. .

[0043] Furthermore, this specification does not include any terms not defined herein (including scientific and technical terms such as technical or academic terms). The term "mu" can be used in the same sense as the general meaning understood by a person skilled in the art. The definitions of terms used in dictionaries, etc., should be interpreted in a way that is consistent with the background of the related technology. It is preferable that this be done.

[0044] Furthermore, the content described in one embodiment (even a part of it) may vary depending on the form of its implementation. Other content (even partial content) described in the tone, and / or one or more other practices Apply, combine, or replace the content (even if only a part of it) described in this form. These can be done.

[0045] Furthermore, the same symbol is used when referring to items made of the same material or formed simultaneously. Sometimes, however, when it is necessary to distinguish between them, the symbol "_1" is used. The notation "2" or similar may be added to indicate this. For example, if multiple first layer wirings 303 are made of the same material, If this is done, the drawings should individually label them with symbols such as "303_1", "303_2", etc. A number shall be assigned. And when referring to the first layer wiring collectively in the specification, "first layer wiring 303" shall be used. Although they are written as such, when one of them needs to be distinguished from the others, it is called "Layer 1 wiring 303_1". It is sometimes written as "uni".

[0046] (Embodiment 1) Figure 1(A) shows an example of the circuit of the display device according to this embodiment. This is used as one dot of the display device. The first gate signal line 101 and the second gate signal Line 102, data line 103, first wiring 104, second wiring 105, and third wiring 106 It has 6 wires. The potentials of the first wire 104, the second wire 105, and the third wire 106 are It is desirable to keep it constant. Of these, the second wiring 105 and the third wiring 106 are the same It may be designed and set to be at an electric potential.

[0047] Also, the display element 107, capacitor 108, first transistor 109, and second transistor 110 and the third transistor 111 and the fourth transistor 112 and the fifth transistor 113 It has a sixth transistor 114.

[0048] The gate of the first transistor 109 is connected to the first gate signal line 101, and the first transistor The first electrode of transistor 109 is connected to the data line 103, and the second electrode of transistor 109 is connected to the It is connected to the second electrode of transistor 112 and the first electrode of transistor 5 113.

[0049] Furthermore, the gate of the second transistor 110 is connected to the first gate signal line 101, and the second transistor The first electrode of transistor 110 connects to the second electrode of the third transistor 111 and the fourth transistor 11 The second electrode of the second transistor 110 is connected to the first electrode of the second transistor 112. It is connected to the gate and the first electrode of capacitor 108.

[0050] The gate of the third transistor 111 is connected to the second gate signal line 102, and the fourth transistor The second electrode of transistor 112 is connected to the first electrode of transistor 5 113, and transistor 5 11 The gate of transistor 3 is connected to the second gate signal line 102, and the second electrode of the fifth transistor 113 is facing forward. The first electrode of the indicator element 107, the second electrode of the capacitor 108, and the sixth transistor 114 The gate of the sixth transistor 114 is connected to the first electrode and the gate of the sixth transistor 114 is connected to the first gate signal line 101. ru.

[0051] Furthermore, the first electrode of the third transistor 111 is connected to the first wiring 104, and the sixth transistor The second electrode of the TA 114 is connected to the second wiring 105, and the second electrode of the display element 107 is connected to the third wiring 1 Connect to 06. The first wire 104, the second wire 105, and the third wire 106 are kept at a constant potential. It should be set up accordingly.

[0052] Furthermore, the second electrode of the first transistor 109, the second electrode of the fourth transistor 112, and the fifth transistor The intersection of the first electrodes of transistor 113 is the first node N1, and the second electrode of transistor 5 113 is the first node N1. The intersection of the pole, the first electrode of the sixth transistor 114, and the first electrode of the display element 107 is the second node. N2, the second electrode of the second transistor 110 and the gate and capacitance of the fourth transistor 112 The intersection of the first electrodes of Ta108 is called the third node N3.

[0053] Here, all transistors are N-channel type. Therefore, the first of the display element 107 The first electrode is the positive electrode, and the second electrode is the negative electrode. Also, the potential of the first wiring 104 is the potential of the second wiring 1 The potential must be higher than that of 05 and the third wiring 106. The potential difference should be determined considering the circuit's voltage rating, etc. Although it is set, the greater the potential difference, the greater the variation in the transistor threshold for the reasons described later. It can compensate for the deterioration of the display elements.

[0054] The potential difference is also determined by the display performance of the display element 107, but for example, the fourth transistor If the threshold voltage of terminal 112 is +1V, then the potential difference between the first wiring 104 and the third wiring 106 is It is preferable to set the voltage to 5V or higher, preferably 10V or higher. Below, the potential of the first wiring 104 is set to V1 Let the potential of the second wiring 105 be V2 and the potential of the third wiring 106 be V3. For example, potential V1 We can set this to +10V, potential V2 to 0V, and potential V3 to 0V.

[0055] In order to drive the circuit shown in Figure 1(A), video data must be input to data line 103, and Then, pulse signals as shown in Figure 3 are input to the first gate signal line 101 and the second gate signal line 102. You just need to exert force. Here, V H V is the potential at which the above transistor turns on. L The power will turn off. It will be assigned a rank.

[0056] As shown in Figure 3, one frame is the potential of the first gate signal line 101 and the second gate signal the potentials of both of the line 102 are V H which is period a, and the potential of the first gate signal line 101 is V H and the second the potential of the gate signal line 102 is V L which is period b, and the potential of the first gate signal line 101 and the potential of the second gate signal line 102 are both V L which is period c, and the potential of the first gate signal line 101 is V L and the potential of the second gate signal line 102 is V H which is period d, so it consists of four periods.

[0057] Note that the potential of the first gate signal line 101 is V H period τ1 and the potential of the second gate signal line 102 potential V L period τ2 may be different, but if they are designed to be the same, the circuit can also be simplified, which is preferable. That is, after one pulse is shaped, the pulse can be output as it is to the first gate signal line 101. On the other hand, an inverted version of the same pulse can be output through a delay circuit to be output to the second gate signal line 102.

[0058] Hereinafter, the operating state of transistors in each period will be described with reference to FIG. 4. FIG. 4(A) shows the state of period a, FIG. 4(B) shows that of period b, FIG. 4(C) shows that of period c, and FIG. 4(D) shows that of period d. A transistor in an on state is indicated by overlapping a circle on the transistor symbol and a transistor in an off state is indicated by overlapping a cross on the transistor symbol.

[0059] In period a, all transistors connected to the first gate signal line 101 and the second gate signal line 102 (the first transistor 109, the second transistor 110, the third transistor 111, the fifth transistor 113, the sixth transistor 114) are turned on. In addition, the fourth transist In STA112, the gate potential and the potential of the first electrode are approximately equal to V1, and the second electrode (the The potential of node 1 (N1) is the potential V of data line 103. Data They are almost equal, but the latter is different from the former. It is sufficiently smaller than so it turns on. At this time, the first electrode of the capacitor (third node N3) The potential of ) is approximately equal to V1, and the potential of the second electrode of the capacitor (second node N2) is equal to V2. They are almost equal.

[0060] As mentioned above, there is a potential difference between the first and second electrodes of the fourth transistor 112 when it is in the ON state. A difference occurs, and a potential difference is generated between the first and second electrodes of the fifth transistor 113, which is also in the ON state. As a result, the fourth transistor 112 and the fifth transistor 113 consume power. Therefore, the period a is preferably as short as possible, and is set to 100 nanoseconds to 500 nanoseconds. It would be good to do so.

[0061] During period b, the potential of the second gate signal line 102 is V L Therefore, the third transistor connected to it... Transistor 111 and the fifth transistor 113 are turned off. The potential of the third node N3 is during the period Initially, b is the same potential as in period a. On the other hand, the first transistor 109, the second transistor The 110 and 6th transistor 114 are ON. Therefore, the potential of the 1st node N1 is , the potential V of the data Data Therefore, the potential at the second node N2 is V2.

[0062] The fourth transistor 112 is ON, and the potential V Data Since it is lower than the potential V1, Charge is transferred from the third node N3 through the first electrode of the fourth transistor 112 to the first node N1. A current flows. Consequently, the potential at the third node N3 decreases. This charge flow is associated with the third The decrease in the potential of node N3 is due to the potential of the third node N3 being (V Data +V th ) until To be continued. That is, the potential difference between the first and second electrodes of capacitor 108 is (V Data +V th —V2)

[0063] During period c, the potential of the first gate signal line 101 is also V L Therefore, the first transistor connected to it Transistor 109, the second transistor 110, and the sixth transistor 114 also turn off. Therefore, the potentials of the first node N1, the second node N2, and the third node N3 are almost the same as during period b. It hasn't changed.

[0064] During period d, the potential of the second gate signal line 102 is V H Therefore, the third transistor connected to it... Transistor 111 and the fifth transistor 113 are turned on. At the beginning of period d, the second node Since the potential of N2 is V2, the fifth transistor 113 has turned on, and the fourth The potential of the second electrode of transistor 112 also becomes V2. Also, the third transistor 111 is As a result, the potential of the first electrode of the fourth transistor 112 becomes V1.

[0065] At this time, the gate potential of the fourth transistor 112 is (V Data +V th ) and The first electrode has a higher potential than the second electrode. Therefore, the gate of the fourth transistor 112 and the Potential difference between the two electrodes (V Data +V th ―V2) is the potential difference between the first electrode and the second electrode. The current I flowing between the first and second electrodes is smaller than (V1-V2) and is in the saturation region. Follow the formula for drain current.

[0066] In other words, the value obtained by subtracting the threshold from the potential difference between the gate and the source (in this case, the second electrode). It is proportional to the square of . In this case, the second electrode of the fourth transistor 112 corresponds to the source.

[0067] I∝{(V Data +V th ―V2)―V th} 2 =(V Data ―V2) 2 (Formula 1 )

[0068] As is clear from Equation 1, the current I does not depend on the threshold of the fourth transistor 112.

[0069] As current flows and charge accumulates at the second node, the potential of the second node N2 increases. However, the potential increase at the second node N2 is capacitively coupled via capacitor 108, This results in an increase in the potential of the third node N3, and therefore the potential of the third node N3 and the potential of the second node N2. The difference remains unchanged. In other words, the current I is constant regardless of the potential of the second node N2.

[0070] As the potential of the second node N2 increases, the display element 107 becomes more able to conduct current, and the second node When the potential of the element N2 reaches a certain value, the current flowing through the display element 107 and the current I become balanced. In other words, the potential of the second node N2 remains constant. The display element 107 displays the current value flowing through it. The display state (luminescence, transmittance, reflectance, color tone, saturation, etc.) changes depending on the conditions, but the state is As is clear from Equation 1, Data V Data It is determined by the potential, etc. This allows for compensation of variations in the transistor threshold.

[0071] Furthermore, as is clear from Equation 1, for the current I to be constant, the potential of the third node N3 is It is essential that it remains constant. If the potential of the third node N3 fluctuates, the current I will change accordingly. This also fluctuates. For example, if the off-characteristics of the second transistor 110 are insufficient, one frame During this period, the potential of the third node N3 increases.

[0072] As the potential of the third node N3 increases, the current I also increases. Such fluctuations are individual This can manifest as defects in pixels or dots, but it can also be observed in display devices in general. In excessive cases, this can lead to display malfunctions such as flickering. Therefore, especially the second transistor 11 It is preferable that the off-state characteristics at 0 are sufficient (i.e., the off-current is sufficiently low).

[0073] (Embodiment 2) In this embodiment, one aspect of the display device of the present invention will be described using Figures 5 to 7. In this embodiment, a display device using an organic EL as a light-emitting element will be described. A light-emitting layer is formed on the active matrix circuit, and light is directed onto the active matrix circuit. This section describes a top-emission type display device that uses light irradiation to display information.

[0074] Figures 5(A) to 5(C) show the wiring and contact holes used to create a single dot in the display device. The layout of the diaphragm, semiconductor layer, etc. is shown. Note that various insulating films, etc., are not shown. A rectangle indicated by a dotted line represents a single dot.

[0075] Figure 5(A) shows the first layer wiring 303, the semiconductor layer 305, and the wiring from the first layer wiring to the wiring above. The location of the first contact hole 306 is shown. Of these, the first layer wiring 303_1 is shown in Figure 1(A This is the wiring corresponding to the second wiring 105 of ). Also, the first layer wiring 303_2 is in Figure 1(A) It becomes part of the first gate signal line 101. Also, the first layer wiring 303_4 is the second in Figure 1(A). It becomes part of the gate signal line 102. Also, part of the first layer wiring 303_3 is shown in Figure 1(A). It becomes part of the first electrode of capacitor 108. The other first layer wiring 303 is shown in Figure 1(A). These become the gates of transistors 109 through 114.

[0076] Also, semiconductor layer 305_1, semiconductor layer 305_2, semiconductor layer 305_3, semiconductor layer 305 _4, semiconductor layer 305_5, and semiconductor layer 305_6 are the first transistors in Figure 1(A), respectively. Transistor 109, second transistor 110, third transistor 111, fourth transistor 1 12, the semiconductor layer of the 5th transistor 113, and the 6th transistor 114.

[0077] Figure 5(B) shows the second layer wiring 307 and the second contact hole 31 connected to the wiring above it. This indicates the position of 0. Of these, the second layer wiring 307_1 corresponds to data line 103 in Figure 1(A). Furthermore, a portion of the second layer wiring 307_6 is part of the second electrode of capacitor 108 in Figure 1(A). This is the result. The other second layer wiring 307 is the first transistor 109 to the sixth transistor in Figure 1(A). This will become the first or second electrode of the lampistor 114.

[0078] Figure 5(C) shows the third layer wiring 311 and the third contact hole 3 connected to the first electrode of the display element. This indicates the position of 14. Of these, the third layer wiring 311_1 is the first gate signal line 1 in Figure 1(A). It becomes part of 01, and the third layer wiring 311_4 becomes part of the second gate signal line 102, and the third Layer wiring 311_5 becomes part of the first wiring 104.

[0079] The wiring layers, semiconductor layers, contact holes, etc., with the shapes shown in Figures 5(A) to 5(C) are stacked. This allows for the fabrication of circuits used in display devices. The following table uses Figures 6 and 7 to illustrate this. The method for manufacturing the device shown will be explained. Figures 6 and 7 are cross-sectional views of the manufacturing process. However, this corresponds to the cross-section of the dashed line AB in Figures 5(A) to 5(C).

[0080] An underlay insulating layer 302 is formed on a first substrate 301 having an insulating surface. Furthermore, a conductive layer is formed After that, the first photolithography process is performed to form a resist mask, and etching is performed. Unnecessary parts are removed by rinsing to form the first layer wiring 303. As shown in Figure 6(A), When the ends of the single-layer wiring 303 are etched to form a tapered shape, the stacked film This is preferable because it improves the coverage.

[0081] There are no major restrictions on the substrate that can be used for the first substrate 301, but at least, the subsequent additions It is necessary to have sufficient heat resistance to withstand heat treatment. The first substrate 301 has glass While a substrate can be used, it is not limited to this, and various types such as transparent, opaque, insulating, and conductive substrates can also be used. Materials can be used. In particular, in this embodiment, the light used for display is on the first substrate. Since the light is directed in one direction, the substrate does not need to be transparent. For example, if the purpose is to improve heat dissipation... Metal materials may be used.

[0082] When a glass substrate is used as the first substrate, if the temperature of the subsequent heat treatment is high, the strain point It is best to use materials with a temperature of 730°C or higher. Also, for the glass substrate, for example, aluminosilicate Glass materials such as barium glass, aluminoborosilicate glass, and bariumborosilicate glass It is used. Furthermore, by including more barium oxide (BaO) compared to boric acid, This allows for the creation of practical heat-resistant glass. Therefore, glass substrates containing more BaO than B2O3 are obtained. It is preferable to use [this].

[0083] In addition, ceramic substrates, quartz substrates, sapphire substrates, etc. can be used instead of the glass substrates mentioned above. A substrate made of edge material may be used. Other materials, such as crystallized glass, can also be used.

[0084] The underlying insulating layer 302 has the function of preventing the diffusion of impurity elements from the first substrate 301, Furthermore, if the first substrate 301 is conductive, it also has the function of maintaining the insulation of the circuit. The insulating layer 302 is selected from silicon nitride film, silicon oxide film, silicon nitride oxide film, or silicon oxide nitride film. It can be formed by a laminated structure consisting of one or more films.

[0085] The material of the first layer wiring 303 is Mo, Ti, Cr, Ta, W, Al, Cu, Pt, Pd, etc. Forming in a single layer or in layers using metallic materials or alloy materials mainly composed of metallic materials. This can be done. For example, by layering indium nitride or molybdenum oxide, which have high work functions, on top of Ti. It can be structured in this way.

[0086] Next, a gate insulator 304 is formed on the first layer wiring 303. The gate insulator 304 is Using methods such as razma CVD or sputtering, silicon oxide layer, silicon nitride layer, silicon oxide nitride A substrate layer, a silicon nitride oxide layer, or an aluminum oxide layer can be formed as a single layer or in multiple layers. For example, by using SiH4 and N2O as film-forming gases, oxidation can be performed using plasma CVD. A silicon nitride film should be formed.

[0087] Next, a semiconductor layer is formed, and island-shaped semiconductor layers 305 are formed by a second photolithography process. The semiconductor layer 305 is formed using silicon semiconductors or oxide semiconductors. This can be done. Silicon semiconductors include single-crystal silicon and polycrystalline silicon, and oxidation As the semiconductor material, In-Ga-Zn oxides and the like can be used as appropriate.

[0088] For example, an In-Ga-Zn oxide is a material whose main components are In, Ga, and Zn. This means an oxide containing In, Ga, and Zn, and the ratio of In, Ga, and Zn is not specified. It is also acceptable for metal elements other than a and Zn to be present.

[0089] For example, the semiconductor layer 305 is an oxide semiconductor that is an In-Ga-Zn based oxide. By using a semiconductor layer with low off-current, the leakage current of the transistor is reduced, especially as shown in Figure Maintaining a constant potential at the third node N3 of 1(A) is preferable for improving display quality.

[0090] Note that oxide semiconductors are not limited to In-Ga-Zn oxides, but include at least indium ( Any material containing either In (in) or zinc (Zn) will suffice. Materials containing both In and Zn are particularly preferable. Furthermore, in order to reduce variations in the electrical characteristics of transistors using the oxide semiconductor, It is preferable to have gallium (Ga) in addition to those as a stabilizer. Furthermore, it is preferable to have tin (Sn) as a stabilizer. It is preferable to have hafnium (Hf) as the stabilizer. Also, aluminum is used as the stabilizer. It is preferable that it contains nium (Al).

[0091] Also, other stabilizers include lanthanides such as lanthanum (La) and cerium ( Ce, praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), hol Mium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb), Lu It may contain one or more types of tecium (Lu).

[0092] For example, other oxide semiconductors include indium oxide, tin oxide, zinc oxide, and binary gold. The oxides of this group include In-Zn oxides, Sn-Ga-Zn oxides, and Al-Ga-Zn oxides. Oxides, Sn-Al-Zn oxides, Sn-Zn oxides, Al-Zn oxides, Zn- Mg oxides, Sn-Mg oxides, In-Mg oxides, In-Ga oxides, ternary systems Metal oxides include In-Al-Zn oxides, In-Sn-Zn oxides, and In-Hf -Zn oxides, In-La-Zn oxides, In-Ce-Zn oxides, In-Pr- Zn oxides, In-Nd-Zn oxides, In-Sm-Zn oxides, In-Sm-Z n-based oxides, In-Eu-Zn oxides, In-Gd-Zn oxides, In-Tb-Zn In-Dy-Zn oxides, In-Ho-Zn oxides, In-Er-Zn oxides Oxides, In-Tm-Zn oxides, In-Yb-Zn oxides, In-Lu-Zn ​​acids In-Sn-Ga-Zn oxides, which are oxides of quaternary metals, and In-Hf-Ga- Zn oxides, In-Al-Ga-Zn oxides, In-Sn-Al-Zn oxides, I n-Sn-Hf-Zn oxides and In-Hf-Al-Zn oxides can be used. .

[0093] For example, In:Ga:Zn = 1:1:1 (= 1 / 3:1 / 3:1 / 3) or In:G In-Ga-Zn system oxidation with atomic ratio a:Zn=2:2:1 (=2 / 5:2 / 5:1 / 5) Oxides with a similar composition to the substance can be used. Alternatively, In:Sn:Zn=1: 1:1(=1 / 3:1 / 3:1 / 3), In:Sn:Zn=2:1:3(=1 / 3:1 / 6:1 / 2) or In:Sn:Zn=2:1:5 (=1 / 4:1 / 8:5 / 8) It is advisable to use In-Sn-Zn oxides with a specific ratio or oxides with a similar composition.

[0094] However, this is not limited to these, and depends on the required semiconductor characteristics (mobility, threshold, variability, etc.) A suitable composition should be used accordingly. Furthermore, in order to obtain the required semiconductor properties, Carrier concentration, impurity concentration, defect density, atomic ratio of metal elements to oxygen, interatomic bond distance, density It is preferable to make the following appropriate.

[0095] For example, high mobility can be obtained relatively easily with In-Sn-Zn oxides. However, Furthermore, even with In-Ga-Zn oxides, increasing the bulk defect density can increase mobility. It is possible.

[0096] For example, if the atomic ratio of In, Ga, and Zn is In:Ga:Zn=a:b:c(a+b+ For an oxide where c=1, the atomic ratio is In:Ga:Zn=A:B:C (A+B+C=1). For the oxides to be in the vicinity of r, a, b, and c are (a-A) 2 +(b-B) 2 +(c―C) 2 ≤r 2 This means that the following conditions are met. For example, r can be set to 0.05. The same applies to other oxides. That is the case.

[0097] Oxide semiconductors can be single crystals or non-single crystals. In the latter case, they can be amorphous or polycrystalline. But that's fine too. Also, even if the structure contains crystalline parts within the amorphous material, it can be non-amorphous. But that's fine.

[0098] Amorphous oxide semiconductors can be made relatively easily to obtain a flat surface, This can reduce interfacial scattering when fabricating transistors, and it can be done relatively easily and relatively high You can obtain a high degree of mobility.

[0099] Furthermore, in crystalline oxide semiconductors, bulk defects can be reduced even further, and surface By improving the flatness, it is possible to obtain mobility higher than that of an amorphous oxide semiconductor. To improve surface flatness, it is preferable to form an oxide semiconductor on a flat surface. Specifically, the average surface roughness (Ra) is 1 nm or less, preferably 0.3 nm or less, more preferably Alternatively, it is preferable to form it on a surface with a nm or smaller.

[0100] After forming the semiconductor layer 305, a third photolithography process is performed on a portion of the gate insulator 304. This forms a first contact hole 306 that reaches the first layer wiring. The method for forming Lu 306 can be appropriately selected from dry etching, wet etching, etc. The cross-section up to this point is shown in Figure 6(A).

[0101] Next, a conductive film is formed on the gate insulator 304 and the semiconductor layer 305, and the fourth photolithography is performed. The second layer wiring 307 is formed by a graphing process. The conductive film used for the second layer wiring 307 is For example, a metal film containing elements selected from Al, Cr, Cu, Ta, Ti, Mo, and W. , or metal nitride films containing the above-mentioned elements (titanium nitride film, molybdenum nitride film, nitrogen A tungsten film (or similar material) can be used.

[0102] Furthermore, Ti, Mo, W, etc. are added to either the underside or the upper side or both sides of a metal film such as Al or Cu. High melting point metal films or metal nitride films thereof (titanium nitride film, molybdenum nitride film, tungsten nitride film) A configuration in which gusten films are stacked may also be used.

[0103] Furthermore, the second layer wiring 307 may be formed of a conductive metal oxide. Examples include indium oxide, tin oxide, zinc oxide, In-Sn oxides (ITO, etc.), In- By using Zn-based oxides, or materials containing silicon oxide in these metal oxide materials... It is possible.

[0104] Next, on the semiconductor layer 305 and the second layer wiring 307, the first interlayer insulator 308 and the second layer An interlayer insulator 309 is formed. The first interlayer insulator 308 is a silicon oxide film, oxidized silicon nitride. An inorganic insulating film such as a silicon film can be used. As the second interlayer insulator 309, To reduce surface irregularities caused by transistors, it is preferable to select an insulating film with planarization properties. Suitable. For example, inorganic materials such as SOG (spin-on glass), polyimide, acrylic, Organic materials such as benzocyclobutene can be used. The aqueous structure formed by these materials The second interlayer insulator 309 may be formed by laminating multiple edge films.

[0105] Next, a fifth photolithography step is performed on the first interlayer insulator 308 and the second interlayer insulator. A second contact hole 310 is formed in object 309 that reaches the second layer wiring 307. The method for forming the tact hole 310 can be appropriately selected, such as dry etching or wet etching. That's all you need to do. Figure 6(B) shows what has happened so far.

[0106] Next, a conductive film is formed on the second interlayer insulator, and the third layer is formed by a sixth photolithography process. A wiring 311 is formed. The conductive film used for the third layer wiring 311 is the second layer wiring 307. The material can be selected from a variety of options, but one with particularly low resistivity is preferred, such as Cu or its alloys. It is recommended to use this.

[0107] Next, a third interlayer insulator 312 and a fourth interlayer insulator 313 are formed on the third layer wiring 311. The third interlayer insulator 312 and the fourth interlayer insulator 313 are connected to the first interlayer insulator 308 and the second interlayer insulator. It can be formed from a material that can be used for the insulator 309.

[0108] Next, the seventh photolithography step is performed on the third interlayer insulator 312 and the fourth interlayer insulator. A third contact hole 314 is formed in object 313 that reaches the third layer wiring 311. The method for forming the tact hole 314 can be appropriately selected, such as dry etching or wet etching. That's all you need to do. Figure 6(C) shows what has happened so far.

[0109] Next, a conductive film is formed on the fourth interlayer insulator 313, and then the eighth photolithography process is performed , a reflective electrode layer 315 is formed. The reflective electrode layer 315 is the [number] of the display element 107 in Figure 1(A). This corresponds to one electrode. The reflective electrode layer 315 is designed to improve the light extraction efficiency, and is located at the rear. A material that efficiently reflects the light emitted by the light-emitting layer 317 formed thereon is preferred.

[0110] The reflective electrode layer 315 may also be a laminated structure. For example, gold on the side in contact with the light-emitting layer 317. A conductive film made of an oxide, or a thin layer of titanium, etc., is formed on the other side, and a highly reflective metal film (aluminum) is applied to the other side. Aluminum, alloys containing aluminum, or silver can be used. By configuring it as follows, the light-emitting layer 317 and a highly reflective metal film (aluminum, aluminum) This can suppress the formation of an insulating film between the alloy (including silver, etc.) and the surrounding material. It is suitable.

[0111] Next, a partition wall 316 is formed on the reflective electrode layer 315. The partition wall 316 is made of an organic insulating material. , or formed using an inorganic insulating material. In particular, a photosensitive resin material is used for the reflective electrode layer 315 An opening is formed at the top, and the side walls of that opening form an inclined surface with a continuous curvature. It is preferable to form it in this way.

[0112] Next, a reflective electrode layer 315, a light-emitting layer 317 on the partition wall 316, and a transmissive electrode layer 3 on the light-emitting layer 317. Forms 18. The light-emitting layer 317 is composed of a single layer, or multiple layers are stacked. Either configuration is acceptable, but in this embodiment, the light emitted by the light-emitting layer 317 The light is preferably white and has peaks in the red, green, and blue wavelength regions.

[0113] In this embodiment, an organic EL material is used as the light-emitting layer 317, so the light-emitting layer 317 is It is preferable to form it using the air deposition method. Also, due to its characteristics, the light-emitting layer 317 and above it Since it is difficult to form a pattern on the film using a photolithography process, The light-emitting layer 317 and the transparent electrode layer 318 are uniformly formed on the first substrate. 318 corresponds to the second electrode of the display element 107 in Figure 1(A).

[0114] Through the above process, a transistor that controls the driving of the light-emitting element and a light-emitting layer 317 are formed. The situation up to this point is shown in Figure 7(A).

[0115] Next, the light-shielding film 320, the color filter 321, and the overcoat film 322 are formed. The method for fabricating the second substrate 319 is shown below. The second substrate 319 must be transparent. However, the other conditions are less stringent compared to the first substrate 301, and materials with inferior heat resistance can also be used. .

[0116] First, an opaque film is formed on the second substrate 319, and a photolithography process is performed to shield it. A light-shielding film 320 is formed. The light-shielding film 320 prevents color mixing and light leakage between each pixel. This is possible. Note that the light-shielding film 320 does not need to be provided. As for the light-shielding film 320, titanium, etc. A metal film with low reflectivity such as ROM, or an organic resin film impregnated with black pigment or black dye. You can use these.

[0117] Next, a color filter 321 is formed on the second substrate 319 and the light-shielding film 320. The LAR filter 321 is a colored layer that transmits light in a specific wavelength band. For example, red waves A red (R) color filter that transmits long-band light, and a green color filter that transmits light in the green wavelength range. (G) is a color filter, and (B) is a blue color filter that transmits light in the blue wavelength range. These can be used. Each color filter is made using known materials and printing methods, inkjet Etching methods such as the etching process and photolithography techniques can be used to determine the desired position. To form.

[0118] Note that while this explanation describes a method using the three RGB colors, it is not limited to this method. The configuration may use four colors in addition to GB (gold, green, and yellow), or it may use five or more colors.

[0119] Next, an overcoat film 322 is formed on the light-shielding film 320 and the color filter 321. The overcoat film 322 is formed from an organic resin film such as acrylic or polyimide. This is possible. The overcoat film 322 removes impurities contained in the color filter 321. This prevents the diffusion of components, etc., to the light-emitting layer 317. 2 may be a laminated structure of an organic resin film and an inorganic insulating film. As the inorganic insulating film, nitride Silicon, silicon oxide, etc. can be used. The overcoat film 322 is shaped It's not necessary to do it.

[0120] Through the above process, a light-shielding film 320, a color filter 321, and an overcoat film 322 are formed. A second substrate 319 is formed, which is provided with the first substrate 301 and the second substrate 319. The parts are aligned and bonded together to form a display device.

[0121] The bonding of the first substrate 301 and the second substrate 319 is not particularly limited, and the refractive index of the substrates that can be bonded is This can be done using a large translucent adhesive. (First substrate 301 and second substrate 3) A sealed space 323 is formed between 19. The space 323 is not particularly limited and is light-transmitting. It just needs to have some properties and prevent outside air from entering.

[0122] However, it is preferable to fill the space 323 with a light-transmitting material whose refractive index is greater than that of air. It seems that when the refractive index is small, the obliquely oriented light emitted from the light-emitting layer 317 will be in space 323. This causes further refraction, and in some cases, light may even be emitted from adjacent pixels. Therefore, space As 323, for example, a light-transmissive adhesive with a large refractive index that can bond the first substrate 301 and the second substrate 319 can be used.

[0123] In addition, an inert gas such as nitrogen or argon can also be used. Further, a desiccant or the like may be dispersed in the space 323 in advance. The state up to this point is shown in FIG. 7(B).

[0124] The display device shown in FIG. 7(B) is a display device having a so-called top emission structure, which emits light from the light-emitting layer 317 toward the second substrate 319. Further, it has a structure in which white light emitted from the light-emitting layer 317 is color-separated by the color filter 321.

[0125] A comparison is made between a display device having a top emission structure (hereinafter abbreviated as white + CF + TE structure) that combines such a white light-emitting light-emitting element and a color filter, and a display device having a top emission structure of separately painted light-emitting elements (hereinafter referred to as separate painting + TE structure) formed by a separate painting method. Note that the separate painting method refers to a method in which RGB materials are applied to each pixel separately by a method such as vapor deposition.

[0126] First, for colorization, in the case of the white + CF + TE structure, colorization is performed using a color filter. Therefore, a color filter is required. On the other hand, in the case of the separate painting + TE structure, each pixel is separately painted by vapor deposition or the like to achieve colorization, so no color filter is required. However, although the white + CF + TE structure requires a color filter, the separate painting + TE structure requires a metal mask or the like to perform separate painting. In addition, although separate painting can be performed using inkjet or the like without using a metal mask, There are still many technical problems.

[0127] Note that when a metal mask is used, the vapor deposition material is also deposited on the metal mask, so there are also problems such as low material utilization efficiency and high cost. In addition, the metal mask and the light-emitting elem ent come into contact with each other, which causes damage to the light-emitting element, or scratches, particles, etc. due to the contact, so the yield decreases.

[0128] Next, regarding the pixel size, in the separate coating + TE structure, it is necessary to coat different colors for each pixel , and it is necessary to provide an area required for separate coating between pixels. Therefore, the size of one pixel cannot be increase d. This significantly reduces the aperture ratio. On the other hand, in the case of white + CF + TE structure, there is no need to provide an area required for separate coating between pixels, so one pixel can be increased in size, and accordingly the aperture ratio can be improved.

[0129] In addition, when increasing the size of a display device, manufacturing technology for the display device is an indispensable element. In the separate coating + TE structure, a metal mask is required for separate coating, and large-sized compatible metal mask technology and production equipment have not been established, so it is difficult. In addition, even if large-sized compatible metal mask technology and production equipment are established, the vapor deposition material is still deposited on the metal mask , and the problem of low material utilization efficiency remains unsolved. On the other hand, in the case of the white + CF + TE structure, a metal mask is not required, so manufacturing can be performed using conventional production equipment, which is preferable.

[0130] In addition, regarding the productivity of display devices, manufacturing equipment for display devices is an important factor. For example, when a light-emitting element has a multi-layer stacked structure, the apparatus for manufacturing a display device can be either in-line or It is preferable to form multiple deposition sources on the substrate simultaneously or sequentially as a multi-chamber system. It seems so. In the case of color separation + TE structure, it is necessary to color each pixel differently, so the desired position To form the object, it is necessary to replace the metal mask. Therefore, it is difficult to implement the manufacturing equipment in-line or as a multi-chamber system. On the other hand, in the case of a white + CF + TE structure, there is no need to use a metal mask, so it can be done in-line. Alternatively, it is easy to configure the manufacturing apparatus as a multi-chamber system.

[0131] (Embodiment 3) In this embodiment, the electronic device is manufactured using the display device described in the above embodiment. An example will be explained using Figure 8.

[0132] An example of an electronic device to which the present invention can be applied is a television device (television, or television). (Also called a video receiver), computer monitors, digital cameras, digital video cameras Cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, audio players Examples include live equipment, amusement machines (pachinko machines, slot machines, etc.), and game cabinets. A specific example of an electronic device is shown in Figure 8.

[0133] Figure 8(A) shows a table 400 having a display unit. The table 400 is housed in a casing 4 A display unit 403 is incorporated into 01. A display device manufactured using one aspect of the present invention is It can be used in the display unit 403, and the display unit 403 can display video. This is a Noh play. Furthermore, it shows a configuration in which the housing 401 is supported by four legs 402. The enclosure 401 has a power cord 405 for supplying power.

[0134] The display unit 403 has a touch input function, and by touching a display button 404 displayed on the display unit 403 of the table 400 with a finger or the like, a screen operation or information can be input. Further, a hinge provided on the housing 401 allows the screen of the display unit 403 to be erected perpendicularly with respect to the floor, and the table can also be used as a television device. In a small room, installing a large-screen television device reduces the available free space, but if the display unit is incorporated in the table , the space of the room can be effectively utilized.

[0135] If the display device including the light-blocking spacer described in the foregoing embodiment is used, color bleeding, color shift and the like in display are less likely to occur. Therefore, by using said display device for the display unit 403 , the display unit 403 can have higher display quality than conventional display units. Further, since a pair of substrates are held by the light-blocking spacer, the display is extremely resistant to external forces such as impact and distortion , and thus can be suitably used for the table shown in FIG. 8(A).

[0136] FIG. 8(B) shows a television device 410. In the television device 410, a display unit 412 is incorporated in a housing 411. A display device manufactured according to one aspect of the present invention can be used for the display unit 412, and it is possible to display video by the display unit 412 . It should be noted that, herein, a configuration in which the housing 411 is supported by a stand 413 is shown.

[0137] The operation of the television device 410 can be performed via an operation switch provided on the housing 411 or a separate remote control device 414. An operation key 41 provided in the remote control device 414 ​6 allows you to operate the channel and volume, and the display unit 412 displays the video The image can be manipulated. Also, the remote control unit 414 A display unit 415 that displays the information output from the device may also be provided.

[0138] The television system 410 shown in Figure 8(B) includes a receiver, modem, and other components. The John device 410 can receive general television broadcasts using a receiver, and further By connecting to a wired or wireless communication network via a modem, one-way (From sender to recipient) or bidirectional (between sender and recipient, or between recipients, etc.) It is also possible to communicate information.

[0139] If a display device equipped with a light-shielding spacer as described in the previous embodiment is used, the display will Because color bleeding and color shifts are less likely to occur, this display device is used on the display of a television device. By using it in the display unit 412, it is possible to create a television device with higher display quality compared to conventional devices. can.

[0140] Figure 8(C) shows a personal computer 420, consisting of a casing 421, a casing 422, and a display unit 4 Includes 23, keyboard 424, external connection port 425, pointing device 426, etc. The computer displays a display device manufactured using one aspect of the present invention on its display unit 423. It is produced by using it.

[0141] Furthermore, if a display device equipped with a light-shielding spacer as described in the previous embodiment is used, Because color bleeding and color shifts in the display are less likely to occur, the display device is used with a computer. By using it in the display unit 423, it becomes possible to create a display unit with higher display quality compared to conventional models. ru.

[0142] Figure 8(D) shows an example of a mobile phone. The mobile phone 430 is assembled into the housing 431. In addition to the enclosed display unit 432, there is a power button 433, an external connection port 434, and a speaker 435. It is equipped with a microphone 436, operation buttons 437, etc. The mobile phone 430 is the first of the present invention. The device is manufactured by using a display device manufactured using the embodiment as the display unit 432.

[0143] The mobile phone 430 shown in Figure 8(D) allows information to be entered by touching the display unit 432 with a finger or the like. You can perform actions such as typing, making phone calls, or composing emails.

[0144] The display unit 432 has three main modes. The first is a display that primarily displays images. The first mode is display mode, the second is input mode which is mainly for inputting information such as characters. The third is display mode. This is a combination of two modes: Mode and Input Mode.

[0145] For example, when making a phone call or composing an email, the display unit 432 is primarily used for text input. In this input mode, you can simply input the characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display unit 432. stomach.

[0146] Furthermore, the mobile phone 430 has sensors inside that detect tilt, such as a gyroscope and an accelerometer. By providing a detection device, the orientation of the mobile phone 430 (vertical or horizontal) can be determined. The display on the display unit 432 can be automatically switched.

[0147] Additionally, screen modes can be switched by touching the display unit 432 or by pressing the operation buttons on the housing 431. This is performed by the operation of 437. Also, depending on the type of image displayed on the display unit 432 It can also be configured to switch between modes. For example, if the image signal displayed on the display unit is video data If it's text data, switch to display mode; if it's text data, switch to input mode.

[0148] Furthermore, in input mode, the signal detected by the optical sensor of the display unit 432 is detected, and the display unit If there is no touch input for a certain period of time, the screen mode will switch from input mode. You may also control the system to switch to display mode.

[0149] Furthermore, the display unit 432 can also function as an image sensor. For example, the display unit By touching the palm or fingers to device 432 and capturing images of palm prints, fingerprints, etc., personal authentication can be performed. Furthermore, the display unit may have a backlight that emits near-infrared light or a sensor that emits near-infrared light. Using a light source designed for imaging, it is also possible to image finger veins, palmar veins, and other veins.

[0150] If a display device equipped with a light-shielding spacer as described in the previous embodiment is used, the display will Because color bleeding and color shifts are less likely to occur, the display device is used on the display unit 4 of the mobile phone. By using it in 32, it becomes possible to create a mobile phone with higher display quality compared to conventional models. Furthermore, since the pair of substrates are held in place by a light-shielding spacer, they are resistant to impact and distortion. Because it is extremely resistant to any external force, it can be suitably used as a mobile phone as shown in Figure 8(D). ru.

[0151] The configurations and methods described in this embodiment are compatible with the configurations and methods described in other embodiments. They can be used in any combination. [Explanation of symbols]

[0152] 101 First Gate Signal Line 102 Second Gate Signal Line 103 data lines 104 1st wiring 105 2nd wiring 106 3rd wiring 107 display elements 108 Capacitors 109 First Transistor 110 Second Transistor 111 Third Transistor 112. Fourth Transistor 113 Fifth Transistor 114. Transistor #6 201 First Gate Signal Line 202 Second Gate Signal Line 203 Third Gate Signal Line 204 Gate 4 signal line 205 Gate 5 signal line 206 data lines 207 1st wiring 208 2nd wiring 209 3rd wiring 210 light-emitting elements 211 Capacitors 212 First Transistor 213 Second Transistor 214 Third Transistor 215 Fourth Transistor 216 Fifth Transistor 217 Transistor 6 218 Transistor 7 301 First board 302 Underlayment Insulation Layer 303 1st layer wiring 304 Gate Insulator 305 Semiconductor layer 306 First Contact Hole 307 2nd layer wiring 308 First interlayer insulator 309 Second layer insulator 310 Second Contact Hole 311 3rd layer wiring 312 Third Interlayer Insulator 313 Fourth interlayer insulator 314 Third Contact Hole 315 Reflective electrode layer 316 Bulkhead 317 Emitting layer 318 Transparent electrode layer 319 Second board 320 Light-shielding film 321 Color Filters 322 Overcoat film 323 Space 400 tables 401 cabinet 402 Legs 403 Display section 404 Display button 405 Power cord 410 Television equipment 411 cabinets 412 Display section 413 Stand 414 Remote control unit 415 Display section 416 Operation Keys 420 Personal Computers 421 cabinet 422 cabinets 423 Display section 424-key keyboard 425 External connection ports 426 Pointing devices 430 Mobile phones 431 cabinets 432 Display section 433 Power button 434 External connection ports 435 Speakers 436 Mike 437 Operation buttons N1 First Node N2 Second Node N3 3rd Node

Claims

1. It comprises a first transistor to a sixth transistor, a light-emitting element, a capacitor, a data line, a first wire to which a first potential is applied, and a second wire to which a second potential is applied. Either the source or the drain of the first transistor is electrically connected to the data line. The source or drain of the first transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the second transistor is electrically connected to the gate of the fourth transistor. The source or drain of the second transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor, the other of which is electrically connected to the first wiring, The source or drain of the fifth transistor is electrically connected to the pixel electrode of the light-emitting element. The source or drain of the fifth transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the sixth transistor is electrically connected to the second wiring. The source or drain of the sixth transistor is electrically connected to the pixel electrode. One electrode of the capacitor is electrically connected to the gate of the fourth transistor. The other electrode of the capacitor is a light-emitting device electrically connected to the pixel electrode, A first conductive film having a region positioned above the first insulating film and functioning as the gate of the second transistor, A second conductive film having a region positioned above the first insulating film and functioning as the gate of the fourth transistor, A third conductive film having a region positioned above the first insulating film and functioning as the second wiring, A second insulating film having a region positioned above the first conductive film, a region positioned above the second conductive film, and a region positioned above the third conductive film, A first semiconductor film having a region positioned above the second insulating film and having a channel formation region for the second transistor, A second semiconductor film having a region positioned above the second insulating film and having a channel formation region for the fourth transistor, A fourth conductive film having a region positioned above the second insulating film and functioning as a data line, A fifth conductive film having a region positioned above the second insulating film, electrically connected to either the source or the drain of the fifth transistor, and electrically connected to the other source or the drain of the sixth transistor, A third insulating film having a region positioned above the fourth conductive film and a region positioned above the fifth conductive film, A sixth conductive film having a region positioned above the third insulating film and functioning as the first wiring, A seventh conductive film having a region positioned above the third insulating film and electrically connected to the pixel electrode, The fourth conductive film is intersected with the third conductive film. The sixth conductive film intersects with the fourth conductive film. Light-emitting device.

2. It comprises a first transistor to a sixth transistor, a light-emitting element, a capacitor, a data line, a first wire to which a first potential is applied, and a second wire to which a second potential is applied. Either the source or the drain of the first transistor is electrically connected to the data line. The source or drain of the first transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the second transistor is electrically connected to the gate of the fourth transistor. The source or drain of the second transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor, the other of which is electrically connected to the first wiring, The source or drain of the fifth transistor is electrically connected to the pixel electrode of the light-emitting element. The source or drain of the fifth transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the sixth transistor is electrically connected to the second wiring. The source or drain of the sixth transistor is electrically connected to the pixel electrode. One electrode of the capacitor is electrically connected to the gate of the fourth transistor. The other electrode of the capacitor is a light-emitting device electrically connected to the pixel electrode, A first conductive film having a region positioned above the first insulating film and functioning as the gate of the second transistor, A second conductive film having a region positioned above the first insulating film and functioning as the gate of the fourth transistor, A third conductive film having a region positioned above the first insulating film and functioning as the second wiring, A second insulating film having a region positioned above the first conductive film, a region positioned above the second conductive film, and a region positioned above the third conductive film, A first semiconductor film having a region positioned above the second insulating film and having a channel formation region for the second transistor, A second semiconductor film having a region positioned above the second insulating film and having a channel formation region for the fourth transistor, A fourth conductive film having a region positioned above the second insulating film and functioning as a data line, A fifth conductive film having a region positioned above the second insulating film, electrically connected to either the source or the drain of the fifth transistor, and electrically connected to the other source or the drain of the sixth transistor, A third insulating film having a region positioned above the fourth conductive film and a region positioned above the fifth conductive film, A sixth conductive film having a region positioned above the third insulating film and functioning as the first wiring, A seventh conductive film having a region positioned above the third insulating film and electrically connected to the pixel electrode, Each of the first conductive film and the third conductive film has a region in contact with the first insulating film, The fourth conductive film is intersected with the third conductive film. The sixth conductive film intersects with the fourth conductive film. Light-emitting device.

3. It comprises a first transistor to a sixth transistor, a light-emitting element, a capacitor, a data line, a first wire to which a first potential is applied, and a second wire to which a second potential is applied. Either the source or the drain of the first transistor is electrically connected to the data line. The source or drain of the first transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the second transistor is electrically connected to the gate of the fourth transistor. The source or drain of the second transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor, the other of which is electrically connected to the first wiring, The source or drain of the fifth transistor is electrically connected to the pixel electrode of the light-emitting element. The source or drain of the fifth transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the sixth transistor is electrically connected to the second wiring. The source or drain of the sixth transistor is electrically connected to the pixel electrode. One electrode of the capacitor is electrically connected to the gate of the fourth transistor. The other electrode of the capacitor is a light-emitting device electrically connected to the pixel electrode, A first conductive film having a region positioned above the first insulating film and functioning as the gate of the second transistor, A second conductive film having a region positioned above the first insulating film and functioning as the gate of the fourth transistor, A third conductive film having a region positioned above the first insulating film and functioning as the second wiring, A second insulating film having a region positioned above the first conductive film, a region positioned above the second conductive film, and a region positioned above the third conductive film, A first semiconductor film having a region positioned above the second insulating film and having a channel formation region for the second transistor, A second semiconductor film having a region positioned above the second insulating film and having a channel formation region for the fourth transistor, A fourth conductive film having a region positioned above the second insulating film and functioning as a data line, A fifth conductive film having a region positioned above the second insulating film, electrically connected to either the source or the drain of the fifth transistor, and electrically connected to the other source or the drain of the sixth transistor, A third insulating film having a region positioned above the fourth conductive film and a region positioned above the fifth conductive film, A sixth conductive film having a region positioned above the third insulating film and functioning as the first wiring, A seventh conductive film having a region positioned above the third insulating film and electrically connected to the pixel electrode, Each of the sixth conductive film and the seventh conductive film has a region in contact with the third insulating film, The fourth conductive film is intersected with the third conductive film. The sixth conductive film intersects with the fourth conductive film. Light-emitting device.

4. It comprises a first transistor to a sixth transistor, a light-emitting element, a capacitor, a data line, a first wire to which a first potential is applied, and a second wire to which a second potential is applied. Either the source or the drain of the first transistor is electrically connected to the data line. The source or drain of the first transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the second transistor is electrically connected to the gate of the fourth transistor. The source or drain of the second transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor, the other of which is electrically connected to the first wiring, The source or drain of the fifth transistor is electrically connected to the pixel electrode of the light-emitting element. The source or drain of the fifth transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the sixth transistor is electrically connected to the second wiring. The source or drain of the sixth transistor is electrically connected to the pixel electrode. One electrode of the capacitor is electrically connected to the gate of the fourth transistor. The other electrode of the capacitor is a light-emitting device electrically connected to the pixel electrode, A first conductive film having a region positioned above the first insulating film and functioning as the gate of the second transistor, A second conductive film having a region positioned above the first insulating film and functioning as the gate of the fourth transistor, A third conductive film having a region positioned above the first insulating film and functioning as the second wiring, A second insulating film having a region positioned above the first conductive film, a region positioned above the second conductive film, and a region positioned above the third conductive film, A first semiconductor film having a region positioned above the second insulating film and having a channel formation region for the second transistor, A second semiconductor film having a region positioned above the second insulating film and having a channel formation region for the fourth transistor, A fourth conductive film having a region positioned above the second insulating film and functioning as a data line, A fifth conductive film having a region positioned above the second insulating film, electrically connected to either the source or the drain of the fifth transistor, and electrically connected to the other source or the drain of the sixth transistor, A third insulating film having a region positioned above the fourth conductive film and a region positioned above the fifth conductive film, A sixth conductive film having a region positioned above the third insulating film and functioning as the first wiring, A seventh conductive film having a region positioned above the third insulating film and electrically connected to the pixel electrode, The fifth conductive film functions as the other electrode of the capacitor. The fourth conductive film is intersected with the third conductive film. The sixth conductive film intersects with the fourth conductive film. Light-emitting device.

5. It comprises a first transistor to a sixth transistor, a light-emitting element, a capacitor, a data line, a first wire to which a first potential is applied, and a second wire to which a second potential is applied. Either the source or the drain of the first transistor is electrically connected to the data line. The source or drain of the first transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the second transistor is electrically connected to the gate of the fourth transistor. The source or drain of the second transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor, the other of which is electrically connected to the first wiring, The source or drain of the fifth transistor is electrically connected to the pixel electrode of the light-emitting element. The source or drain of the fifth transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the sixth transistor is electrically connected to the second wiring. The source or drain of the sixth transistor is electrically connected to the pixel electrode. One electrode of the capacitor is electrically connected to the gate of the fourth transistor. The other electrode of the capacitor is a light-emitting device electrically connected to the pixel electrode, A first conductive film having a region positioned above the first insulating film and functioning as the gate of the second transistor, A second conductive film having a region positioned above the first insulating film and functioning as the gate of the fourth transistor, A third conductive film having a region positioned above the first insulating film and functioning as the second wiring, A second insulating film having a region positioned above the first conductive film, a region positioned above the second conductive film, and a region positioned above the third conductive film, A first semiconductor film having a region positioned above the second insulating film and having a channel formation region for the second transistor, A second semiconductor film having a region positioned above the second insulating film and having a channel formation region for the fourth transistor, A fourth conductive film having a region positioned above the second insulating film and functioning as a data line, A fifth conductive film having a region positioned above the second insulating film, electrically connected to either the source or the drain of the fifth transistor, and electrically connected to the other source or the drain of the sixth transistor, A third insulating film having a region positioned above the fourth conductive film and a region positioned above the fifth conductive film, A sixth conductive film having a region positioned above the third insulating film and functioning as the first wiring, A seventh conductive film having a region positioned above the third insulating film and electrically connected to the pixel electrode, Each of the first conductive film and the third conductive film has a region in contact with the first insulating film, Each of the sixth conductive film and the seventh conductive film has a region in contact with the third insulating film, The fourth conductive film is intersected with the third conductive film. The sixth conductive film intersects with the fourth conductive film. Light-emitting device.

6. It comprises a first transistor to a sixth transistor, a light-emitting element, a capacitor, a data line, a first wire to which a first potential is applied, and a second wire to which a second potential is applied. Either the source or the drain of the first transistor is electrically connected to the data line. The source or drain of the first transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the second transistor is electrically connected to the gate of the fourth transistor. The source or drain of the second transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor, the other of which is electrically connected to the first wiring, The source or drain of the fifth transistor is electrically connected to the pixel electrode of the light-emitting element. The source or drain of the fifth transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the sixth transistor is electrically connected to the second wiring. The source or drain of the sixth transistor is electrically connected to the pixel electrode. One electrode of the capacitor is electrically connected to the gate of the fourth transistor. The other electrode of the capacitor is a light-emitting device electrically connected to the pixel electrode, A first conductive film having a region positioned above the first insulating film and functioning as the gate of the second transistor, A second conductive film having a region positioned above the first insulating film and functioning as the gate of the fourth transistor, A third conductive film having a region positioned above the first insulating film and functioning as the second wiring, A second insulating film having a region positioned above the first conductive film, a region positioned above the second conductive film, and a region positioned above the third conductive film, A first semiconductor film having a region positioned above the second insulating film and having a channel formation region for the second transistor, A second semiconductor film having a region positioned above the second insulating film and having a channel formation region for the fourth transistor, A fourth conductive film having a region positioned above the second insulating film and functioning as a data line, A fifth conductive film having a region positioned above the second insulating film, electrically connected to either the source or the drain of the fifth transistor, and electrically connected to the other source or the drain of the sixth transistor, A third insulating film having a region positioned above the fourth conductive film and a region positioned above the fifth conductive film, A sixth conductive film having a region positioned above the third insulating film and functioning as the first wiring, A seventh conductive film having a region positioned above the third insulating film and electrically connected to the pixel electrode, Each of the sixth conductive film and the seventh conductive film has a region in contact with the third insulating film, The fifth conductive film functions as the other electrode of the capacitor. The fourth conductive film is intersected with the third conductive film. The sixth conductive film intersects with the fourth conductive film. Light-emitting device.

7. It comprises a first transistor to a sixth transistor, a light-emitting element, a capacitor, a data line, a first wire to which a first potential is applied, and a second wire to which a second potential is applied. Either the source or the drain of the first transistor is electrically connected to the data line. The source or drain of the first transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the second transistor is electrically connected to the gate of the fourth transistor. The source or drain of the second transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor, the other of which is electrically connected to the first wiring, The source or drain of the fifth transistor is electrically connected to the pixel electrode of the light-emitting element. The source or drain of the fifth transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the sixth transistor is electrically connected to the second wiring. The source or drain of the sixth transistor is electrically connected to the pixel electrode. One electrode of the capacitor is electrically connected to the gate of the fourth transistor. The other electrode of the capacitor is a light-emitting device electrically connected to the pixel electrode, A first conductive film having a region positioned above the first insulating film and functioning as the gate of the second transistor, A second conductive film having a region positioned above the first insulating film and functioning as the gate of the fourth transistor, A third conductive film having a region positioned above the first insulating film and functioning as the second wiring, A second insulating film having a region positioned above the first conductive film, a region positioned above the second conductive film, and a region positioned above the third conductive film, A first semiconductor film having a region positioned above the second insulating film and having a channel formation region for the second transistor, A second semiconductor film having a region positioned above the second insulating film and having a channel formation region for the fourth transistor, A fourth conductive film having a region positioned above the second insulating film and functioning as a data line, A fifth conductive film having a region positioned above the second insulating film, electrically connected to either the source or the drain of the fifth transistor, and electrically connected to the other source or the drain of the sixth transistor, A third insulating film having a region positioned above the fourth conductive film and a region positioned above the fifth conductive film, A sixth conductive film having a region positioned above the third insulating film and functioning as the first wiring, A seventh conductive film having a region positioned above the third insulating film and electrically connected to the pixel electrode, Each of the first conductive film and the third conductive film has a region in contact with the first insulating film, The fifth conductive film functions as the other electrode of the capacitor. The fourth conductive film is intersected with the third conductive film. The sixth conductive film intersects with the fourth conductive film. Light-emitting device.

8. It comprises a first transistor to a sixth transistor, a light-emitting element, a capacitor, a data line, a first wire to which a first potential is applied, and a second wire to which a second potential is applied. Either the source or the drain of the first transistor is electrically connected to the data line. The source or drain of the first transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the second transistor is electrically connected to the gate of the fourth transistor. The source or drain of the second transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor is electrically connected to the other source or drain of the fourth transistor. The source or drain of the third transistor, the other of which is electrically connected to the first wiring, The source or drain of the fifth transistor is electrically connected to the pixel electrode of the light-emitting element. The source or drain of the fifth transistor is electrically connected to the source or drain of the fourth transistor. Either the source or the drain of the sixth transistor is electrically connected to the second wiring. The source or drain of the sixth transistor is electrically connected to the pixel electrode. One electrode of the capacitor is electrically connected to the gate of the fourth transistor. The other electrode of the capacitor is a light-emitting device electrically connected to the pixel electrode, A first conductive film having a region positioned above the first insulating film and functioning as the gate of the second transistor, A second conductive film having a region positioned above the first insulating film and functioning as the gate of the fourth transistor, A third conductive film having a region positioned above the first insulating film and functioning as the second wiring, A second insulating film having a region positioned above the first conductive film, a region positioned above the second conductive film, and a region positioned above the third conductive film, A first semiconductor film having a region positioned above the second insulating film and having a channel formation region for the second transistor, A second semiconductor film having a region positioned above the second insulating film and having a channel formation region for the fourth transistor, A fourth conductive film having a region positioned above the second insulating film and functioning as a data line, A fifth conductive film having a region positioned above the second insulating film, electrically connected to either the source or the drain of the fifth transistor, and electrically connected to the other source or the drain of the sixth transistor, A third insulating film having a region positioned above the fourth conductive film and a region positioned above the fifth conductive film, A sixth conductive film having a region positioned above the third insulating film and functioning as the first wiring, A seventh conductive film having a region positioned above the third insulating film and electrically connected to the pixel electrode, Each of the first conductive film and the third conductive film has a region in contact with the first insulating film, Each of the sixth conductive film and the seventh conductive film has a region in contact with the third insulating film, The fifth conductive film functions as the other electrode of the capacitor. The fourth conductive film is intersected with the third conductive film. The sixth conductive film intersects with the fourth conductive film. Light-emitting device.

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