Power amplification circuit and communication device equipped therewith

JP2026165424APending Publication Date: 2026-10-14MURATA MFG CO LTD
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Patent Information

Application Number
JP2025057805
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-03-31
Publication Date
2026-10-14

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Abstract

In power amplification circuits used in 6G communication systems, this technology achieves high output while suppressing power consumption at low voltages. [Solution] The power amplification circuit 100 includes an input terminal T1, a transmission terminal T15, and a transmission circuit 105. The transmission circuit 105 amplifies the high-frequency signal from the RFIC 30 received at the input terminal T1 and transmits it to the antenna ANT1 via the transmission terminal T15. The transmission circuit 105 includes power amplifiers 131 and 132 formed on substrate 210, and a power amplifier 133 formed on substrate 220. Substrates 210 and 220 are semiconductor substrates containing a material mainly composed of compounds of Group III elements and Group V elements. Power amplifiers 131 to 133 constitute a Doherty amplifier. Substrate 210 is a wide-bandgap semiconductor substrate, and substrate 220 is a narrow-bandgap semiconductor substrate.
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