Semiconductor laser device
JP2026165872APending Publication Date: 2026-10-14USHIO INC
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Patent Information
- Application Number
- JP2025058498
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-03-31
- Publication Date
- 2026-10-14
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Figure 2026165872000001_ABST
Abstract
To provide a semiconductor laser device that can achieve high output while keeping etendue low. [Solution] The end-face light-emitting LD chip 100 emits a first emitted light L1 from the first end face 102 and a second emitted light L2 from the second end face 104. The waveguide 200 combines the first emitted light L1 and the second emitted light L2 and emits them in the same direction.
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