Sensor devices and sensor layers

Abstract

We provide sensor devices and sensor layers that can be easily customized after manufacturing according to their intended use. [Solution] The sensor device 11 has a first layer 13a assembled as a sensor layer on its outermost layer. The first layer 13a is provided with at least a first sensor 21 for detecting a first physical or chemical quantity and a second sensor 22 for detecting a second physical or chemical quantity different from the first physical or chemical quantity, on the substrate surface of the first layer 13a.

Description

Technical Field

[0001] The present invention relates to a sensor device and a sensor layer for detecting a physical quantity or a chemical quantity.

Background Art

[0002] As described in Patent Document 1, semiconductor manufacturing processes are used for manufacturing MEMS (Micro-Electro-Mechanical Systems) sensors. In semiconductor manufacturing processes, an enormous manufacturing cost is required for manufacturing a single product. In particular, large investment is required for introducing manufacturing apparatuses. The investment can be recovered only through mass production.

Prior Art Literature

Patent Documents

[0003]

Patent Document 1

Non-Patent Documents

[0004]

Non-Patent Document 1

Summary of Invention

Problems to be Solved by the Invention

[0005] However, in practice, since required functions differ depending on the usage application for users, the MEMS sensors to be mounted also differ. In this case, if a MEMS sensor required for each application and a circuit necessary for the MEMS sensor are manufactured on the substrate surface to produce a sensor device customized for each application, mass production becomes difficult, which may increase the manufacturing cost. Therefore, development of a sensor device that can be easily customized by the user side according to the usage application after manufacturing is desired.

[0006] The present invention aims to provide a sensor device and a sensor layer that can be easily customized after manufacturing according to the intended use. [Means for solving the problem]

[0007] The present invention relates to a sensor device assembled by stacking multiple layers, each having a circuit or wiring, wherein the multiple layers include a sensor layer, and the sensor layer is provided at least on the substrate surface with a first sensor for detecting a first physical or chemical quantity and a second sensor for detecting a second physical or chemical quantity different from the first physical or chemical quantity.

[0008] Furthermore, the present invention relates to a sensor device in which a plurality of layers having circuits or wiring are stacked and assembled, wherein a sensor layer included in the plurality of layers is provided with at least the substrate surface of a first sensor for detecting a first physical quantity or chemical quantity and a second sensor for detecting a second physical quantity or chemical quantity different from the first physical quantity or chemical quantity. [Effects of the Invention]

[0009] According to the above invention, the first sensor and / or second sensor can be made to function by changing the layer that is superimposed and assembled on the sensor layer according to the intended use, so that it can be easily customized after manufacturing according to the intended use. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic perspective view showing the appearance of a sensor device according to the first embodiment of the present invention. [Figure 2] This is a disassembled perspective view of a sensor device. [Figure 3A] This is a perspective view showing the configuration of the MEMS sensor. [Figure 3B]This is an enlarged cross-sectional view illustrating the connection between the first and second layers. [Figure 4] This graph shows the low-frequency components extracted from a detection signal related to a specific example. [Figure 5] This graph shows the maximum and minimum values ​​of the detection output for a specific example. [Figure 6] This graph shows the peak value of the detection output of a pulse sensor in a specific example. [Figure 7] This is a graph showing the frequency characteristics of a pulse, as a specific example. [Figure 8] This is a schematic diagram showing the differences between the third and fourth sensors. [Figure 9] This graph shows how noise is removed from a detection signal, specifically illustrating this process. [Figure 10] This graph shows the sensor fusion process in a specific example. [Figure 11] This is an exploded perspective view of a sensor device according to a second embodiment of the present invention. [Modes for carrying out the invention]

[0011] One embodiment of the present invention will be described below with reference to the attached drawings.

[0012] Figure 1 schematically shows the external appearance of the sensor device 11 according to the first embodiment of the present invention. The sensor device 11 detects at least one or more physical quantities (or chemical quantities) according to the intended use. The sensor device 11 outputs data specifying the physical quantity (or chemical quantity) in accordance with a predetermined format. The format is determined according to the apparatus 12 in which the sensor device 11 is incorporated. The sensor device 11 has a configuration capable of detecting up to 9 types of physical quantities (or chemical quantities), for example. In the sensor device 11, detection of physical quantities (or chemical quantities) other than the physical quantity (or chemical quantity) selected according to the intended use among the 9 types of physical quantities (or chemical quantities) is set to be disabled. The physical quantities (or chemical quantities) other than the selected physical quantity (or chemical quantity) are different from the selected physical quantity (or chemical quantity). The physical quantities (or chemical quantities) other than the selected physical quantity (or chemical quantity) are different from each other. That the physical quantities (or chemical quantities) are different refers not only to different types of physical quantities (or chemical quantities) expressed in different SI units, but may also refer to physical quantities (or chemical quantities) expressed in equivalent SI units. The different physical quantities (or chemical quantities) expressed in equivalent SI units include the same type of physical quantities (or chemical quantities) detected in different numerical ranges.

[0013] The sensor device 11 is assembled by stacking a plurality of layers (described later) provided with circuits or wirings. As shown in Figure 2, the sensor device 11 includes a first layer 13a functioning as a sensor layer, a second layer 13b coupled to the first layer 13a and functioning as a signal processing layer, and a third layer 13c coupled to the first layer 13a with the second layer 13b interposed therebetween and functioning as a signal processing layer and a wireless layer. Here, the first layer 13a is overlaid and assembled on the surface of the second layer 13b. The first layer 13a, which is the sensor layer, is assembled to the outermost layer such as the uppermost layer or the lowermost layer. The second layer 13b is overlaid and assembled on the surface of the third layer 13c.

[0014] A plurality of sensor blocks 15a, 15b, 15c, 15d, 15e, 15f, 16a, 16b, and 16c are arranged on the first layer 13a. Here, nine sensor blocks 15a to 15f and 16a to 16c are formed corresponding to nine types of physical quantities (or chemical quantities). The first sensor block 15a is arranged on the first layer 13a and includes a first sensor 21 that detects a first physical quantity (or chemical quantity). The first sensor 21 is composed of, for example, a MEMS sensor. The MEMS sensor may be fabricated on the substrate surface of the first layer 13a, or may be fabricated as a device chip on the substrate surface and mounted on the first layer 13a. The MEMS sensor may include a light source or a radio wave source combined with the MEMS sensing unit. The first sensor 21 outputs an electrical signal that specifies the detected physical quantity (or chemical quantity).

[0015] The second sensor block 15b is arranged on the first layer 13a and includes a second sensor 22 that detects a second physical quantity (or chemical quantity). The second physical quantity (or chemical quantity) is different from the first physical quantity (or chemical quantity). The second sensor 22 is composed of, for example, a MEMS sensor. The MEMS sensor may be fabricated on the substrate surface of the first layer 13a, or may be fabricated as a device chip on the substrate surface and mounted on the first layer 13a. The MEMS sensor may include a light source or a radio wave source combined with the MEMS sensing unit. The second sensor 22 outputs an electrical signal that specifies the detected physical quantity (or chemical quantity).

[0016] The third to ninth sensor blocks 15c to 15f and 16a to 16c are arranged on the first layer 13a and include third to ninth sensors 23 to 29 that individually detect third to ninth physical quantities (or chemical quantities). The third to ninth physical quantities (or chemical quantities) are different from the first and second physical quantities (or chemical quantities). Preferably, the third to ninth physical quantities (or chemical quantities) are different from each other. The third to sixth sensors 23 to 26 are composed of, for example, MEMS sensors. The MEMS sensors may be fabricated on the first substrate 13a, or they may be fabricated as device chips and mounted on the first substrate 13a. The MEMS sensors may include a light source or radio wave source that can be combined with the detection unit of the MEMS. The seventh to ninth sensors 27, 28, and 29 are composed of, for example, sensors other than MEMS. The seventh to ninth sensors 27, 28, and 29 may include a light source or radio wave source that can be combined with the detection unit. Sensors 7 through 9, 27, 28, and 29, output electrical signals that identify the detected physical (or chemical) quantity. Sensors 1 through 9, 21 through 29, will also be referred to simply as sensors 21 through 29 below.

[0017] Figure 3A shows an example of a MEMS sensor, illustrating a configuration in which cantilever-type MEMS sensors 21a and 22a are provided on the first layer 13a. Note that the first layer 13a shown in Figure 3A also contains other MEMS sensors for detecting other physical (or chemical) quantities, but these other MEMS sensors are not shown here. For example, the MEMS sensor 21a has a configuration similar to that of the sensor substrate shown in Japanese Patent Application No. 2023-103789.

[0018] The MEMS sensor 21a is formed in the opening 100 of the first layer 13a, and a wave receiving section 101 including a piezoresistive layer, a beam section 102, and a beam forming section 103 are formed by notches 106 and 107. In the MEMS sensor 21a, the beam section 102 is the fixed end and the wave receiving section 101 is supported in a cantilevered manner. The sensing portion having a cantilevered plate-shaped wave receiving section 101 is generally called a cantilever. Between the pair of strip-shaped beam sections 102, a rectangular beam forming section 103 is provided separated from the beam sections 102 by a notch 107. The piezoresistive layer on one beam section 102 is connected to an electrode (not shown), and the piezoresistive layer on the other beam section 102 is connected to another electrode (not shown). The MEMS sensor 21a can detect the strength of a wave by measuring the resistance between its pair of electrodes, as the resistance between the electrodes changes based on the changes in the wave receiving section 101 caused by the strength of the wave to be detected.

[0019] Furthermore, the MEMS sensor 22a is formed on the substrate surface of the first layer 13a, and a wave receiving section 111 including a piezoresistive layer, a beam section 112, and a beam forming section 113 are formed by cuts 116 and 117. In this case as well, the piezoresistive layer on one beam section 112 is connected to an electrode (not shown), and the piezoresistive layer on the other beam section 112 is connected to another electrode (not shown). The MEMS sensor 22a can detect temperature changes by measuring the resistance between the pair of electrodes, as the resistance changes based on the change in the wave receiving section 111 caused by the ambient temperature change. The MEMS sensor 21a can also detect the strength of the object to be detected without being affected by temperature by subtracting the increase or decrease in resistance value due to temperature change detected by the MEMS sensor 22a from the detection result.

[0020] An amplification circuit 32 is arranged on the second layer 13b, which is selectively connected to at least one of the first to ninth sensors 21 to 29. Here, the first sensor 21 is connected to the amplification circuit 32. The amplification circuit 32 is fabricated, for example, on the second layer 13b. As shown in Figure 3B, on the first layer 13a, input / output terminals 33 and 34 are arranged uniquely for each of the first to ninth sensors 21 to 29. For example, the operating voltage of the sensor is supplied to the input / output terminal 33. The amplification circuit 32 is connected to the input / output terminal 34. The first layer 13a is connected to the second layer 13b by terminal pillars 35 formed on the surface of the second layer 13b. The terminal pillars 35 consist of conductive pins that are coupled to one sensor 21 selected from the first to ninth sensors 21 to 29 according to the application. Input / output terminals 33 and 34 corresponding to the first to ninth sensors 21 to 29 are provided on the back surface of the substrate of the first layer 13a. The superimposed second layer 13b (another layer) is physically and electrically connected to the input / output terminals 33 and 34. Sensors 22 to 29 other than the selected sensor 21 are not connected to the second layer 13b and the third layer 13c by not providing terminal pillars 35 corresponding to the input / output terminals 33 and 34 on the second layer 13b. In this way, sensors 22 to 29 other than the selected sensor 21 are physically disconnected from the amplification circuit 32 because they do not have corresponding wiring (terminal pillars 35).

[0021] Furthermore, the wiring (terminal pillar 35) of the second layer 13b is applied as a selector to selectively activate the first to ninth sensors 21 to 29 depending on the application, and the first to ninth sensors 21 to 29 can be selected to be used depending on whether or not there is wiring (terminal pillar 35) that connects to the first to ninth sensors 21 to 29 on the second layer 13b. However, the present invention is not limited to this. For example, a selector of the circuit configuration (selector circuit) may be provided in the first layer 13a or the second layer 13b, and the first to ninth sensors 21 to 29 can be selected by a control signal from the selector circuit. Sensors 22 to 29 other than the selected sensor 21 are electrically disconnected from the amplification circuit 32 by the selector circuit. This example will be described later as a second embodiment.

[0022] On the third layer 13c are a signal processing circuit 36 ​​connected to the amplification circuit 32 for processing the detection signal output from the selected sensor 21, a wireless communication module 37 connected to the signal processing circuit 36 ​​for transmitting the data generated by the signal processing circuit 36, and a battery 38 that supplies power to the selected sensor 21, the amplification circuit 32, the signal processing circuit 36, and the wireless communication module 37. The signal processing circuit 36 ​​manages the operation of the selected sensor 21. For this management, the signal processing circuit 36 ​​is connected to input / output terminals 39 and 41 located on the second substrate 13b. For this connection, terminal pillars 42 are formed on the surface of the third layer 13c. The terminal pillars 42 consist of conductive pins that are electrically connected to the signal processing circuit 36. The input / output terminals 39 and 41 are connected to input / output terminals 33 and the amplification circuit 32, respectively. For this connection, vias 43 are used, for example. The amplification circuit 32 is similarly supplied with amplification voltage (or amplification current) from the third substrate 13c via other terminal pillars 42 and vias 43.

[0023] The signal processing circuit 36 ​​generates an output signal according to a predetermined format when processing the detection signal. The detection signal is processed into data in a predetermined format. In the data, physical quantities (or chemical quantities) are identified according to the predetermined format. The data is output from the wireless communication module 37 to the sensor device 11. Here, the signal processing circuit 36 ​​includes an MCU (microcontroller unit) that processes the detection signal according to a specific signal processing program. The signal processing program is stored in memory for each selected sensor. The signal processing program may process the detection signal based on machine learning.

[0024] Next, the operation of the sensor device 11 will be described. The sensor device 11 may be used, for example, as an acoustic sensor (first sensor 21) that detects photoacoustic waves. The sensor device 11 may be incorporated into the device 12 and attached to a human body or other subject. For example, when detecting photoacoustic waves, an operating current is supplied from the signal processing circuit 36 ​​to the first sensor 21. In response to the supply of the operating current, infrared light is irradiated from the light source toward the subject. The photoacoustic waves generated in response to the irradiation of infrared light can be detected by the first sensor 21, which is a MEMS sensor called a cantilever. The first sensor 21 outputs a detection signal to the second layer 13b. The detection signal is amplified by an amplification circuit 32 provided on another second layer 13b superimposed on the first layer 13a. The amplified detection signal is supplied to a signal processing circuit 36 ​​provided on another third layer 13c superimposed on the second layer 13b. The signal processing circuit 36 ​​processes the detection signal according to a signal processing program. The detection signal is processed into data in a predetermined format. For example, the data might specify the blood glucose concentration [mg / dL].

[0025] In establishing the acoustic sensor, the first substrate 13a of the sensor device 11 is pre-configured with various sensors in addition to the acoustic sensor (first sensor 21), including a pulse wave sensor for detecting pulse waves, an acceleration sensor for detecting acceleration, a force sensor for detecting force strength, a pressure sensor for detecting atmospheric pressure, a temperature sensor for detecting temperature, and other sensors. From these sensors, the acoustic sensor (first sensor 21) is selected. Sensors 22 to 29 other than the first sensor 21 that are unsuitable for the intended use are set to be inoperable. During this setup, sensors 22 to 29 are physically disconnected from the amplification circuit 32 because they do not have wiring (terminal pillars 35) corresponding to the second layer 13b. The first sensor 21 on the first layer 13a is connected to the amplification circuit 32 of the second layer 13b by the terminal pillars 35 of the second layer 13b. The signal processing circuit 36 ​​is configured to perform processing operations corresponding to the first sensor 21.

[0026] In the sensor device 11, multiple sensors 21 to 29 are arranged on the substrate surface of a single first layer 13a. When the sensor device 11 wants to operate only, for example, the first sensor 21, it attaches a second layer 13b, which has wiring (terminal pillar 35) corresponding to the first sensor 21, to the first layer 13a. As a result, the second to ninth sensors 22 to 29 are disabled. The sensor device 11 then functions only as the first sensor 21. The first sensor 21 detects a first physical quantity (or chemical quantity).

[0027] Furthermore, when the sensor device 11 wants to operate only, for example, the second sensor 22 among the multiple sensors 21 to 29, a second layer 13b, which is provided with wiring (terminal pillar 35) corresponding to the second sensor 22, is assembled to the first layer 13a. As a result, the first sensor 21 and the third to ninth sensors 23 to 29 are set to be inoperable. The sensor device 11 functions only as the second sensor 22. The second sensor 22 detects a second physical quantity (or chemical quantity).

[0028] Thus, the sensor device 11 can selectively activate the first sensor 21, the second sensor 22, and other sensors from among the multiple sensors 21 to 29, depending on the application. The sensor device 11 can be easily customized after manufacturing according to the application. Furthermore, compared to the case where sensor devices containing only individual sensors 21 to 29 are individually designed and manufactured, the design and manufacturing of the sensor device with multiple sensors 21 to 29 are standardized, resulting in reduced design and manufacturing costs.

[0029] The sensor device 11 includes a wireless communication module 37, which can be connected to multiple sensors 21-29, on a third layer 13c, which is a separate layer from the first layer 13a. For example, when the second to ninth sensors 22-29 are disabled, a signal identifying the first physical quantity (or chemical quantity) is output as a wireless signal from the wireless communication module 37 on the third layer 13c, which is a separate layer from the first layer 13a. When the first sensor 21 and the third to ninth sensors 23-29 are disabled, a signal identifying the second physical quantity (or chemical quantity) is output as a wireless signal from the wireless communication module 37 on another third layer 13c, which is a separate layer from the first layer 13a. The sensor device 11 according to this embodiment can be used as a sensor device including only the first sensor 21 or a sensor device including only the second sensor 22. Furthermore, if data exchange with an external device via wireless communication is not required, another layer without a wireless communication module 37 can be prepared instead of the third layer 13c and assembled on top of the first layer 13a, etc. Therefore, the sensor device 11 can be easily customized after manufacturing according to its intended use.

[0030] In this embodiment, the amplification circuit 32 is mounted on a second layer 13b which is superimposed on the first layer 13a. The amplification circuit 32 is selectively connected to the first sensor 21 from among the multiple sensors 21 to 29 by a terminal pillar 35 which functions as a selector. The first layer 13a is selectively formed depending on the presence or absence of the terminal pillar 35 as a selector. The function of the first sensor 21 is realized by the installation of the terminal pillar 35. Since the amplification circuit 32 is located on a separate layer, the first sensor 21 is kept away from the heat generated by the amplification circuit 32. The heat generated by the amplification circuit 32 can be managed independently. Here, the amplification factor of the amplification circuit 32 can be set individually for each sensor 21 to 29 by the signal processing circuit 36.

[0031] Although each of the multiple sensors 21-29 is equipped with individual input / output terminals 33 and 34, sensors 22-29 other than the selected sensor 21 are physically disconnected from the amplification circuit 32 because the wiring (terminal pillar 35) corresponding to the input / output terminals 33 and 34 is not present in the second layer 13b. In this way, only the functionality of the selected sensor 21 is ensured. Although multiple sensors 21-29 are installed in the first layer 13a, the sensor 21 is physically selected based on the presence or absence of the wiring (terminal pillar 35), so users cannot arbitrarily reactivate sensors 22-29 other than the sensor 21 set according to their intended use. By changing to another second layer 13b with a different location for the wiring (terminal pillar 35), other sensors 22-29 corresponding to that wiring (terminal pillar 35) can also be used.

[0032] In this embodiment, the signal processing circuit 36 ​​is mounted on a third layer 13c that is superimposed on the second layer 13b. The third layer 13c is coupled to the first layer 13a with the second layer 13b in between. Since the signal processing circuit 36 ​​is located on a separate layer, it is isolated from the heat generated by the amplification circuit 32. The heat generated by the signal processing circuit 36 ​​can be managed independently.

[0033] The sensor device 11 may remove high-frequency noise from the detection signal based on a Fast Fourier Transform (FFT). As shown in Figure 4, low-frequency components are extracted from the detection signal based on the FFT. The extracted low-frequency components are subjected to an inverse FFT. High-frequency noise is removed in a manner equivalent to a low-pass filter. The signal processing circuit 36 ​​determines the format according to the signal processing program. Similarly, the sensor device 11 may output only the maximum and minimum values ​​of the detection signal. As shown in Figure 5, the signal processing circuit 36 ​​identifies the maximum and minimum values ​​for each time step when processing the detection signal. The signal processing circuit 36 ​​determines the format [maximum value + time] [minimum value + time] according to the signal processing program. The detection signals from individual sensors 21 to 29 are converted into output signals of the predetermined format. The detection signals are thinned out according to the conversion. The transmission load on the wireless communication module 37 is reduced. The amount of data transmitted is reduced.

[0034] Furthermore, the sensor device 11 can also be used as a pulse wave sensor (second sensor 22) that detects pulse waves in response to skin movement, for example. The sensor device 11 is incorporated into the device 12 and attached to the wrist or fingertip. When detecting pulse waves, an operating current is supplied from the signal processing circuit 36 ​​to the second sensor 22. The sampling frequency is set to, for example, 1 [kHz]. For example, skin movement can be detected by changes in the receiving part of the cantilever. The second sensor 22 outputs the detection signal to the amplification circuit 32 of the second layer 13b. The detection signal detected in the first layer 13a is amplified by the amplification circuit 32 of the second layer 13b. The detection signal amplified in the second layer 13b is supplied to the signal processing circuit 36 ​​of the third layer 13c. The signal processing circuit 36 ​​processes the detection signal according to the signal processing program. The detection signal is processed into data in a predetermined format. For example, the RR interval (time interval between peaks) [sec] is specified in the data. Here, sensors 21, 23-29, other than the second sensor 22, are disabled by the wiring (terminal pillar 35) of the second layer 13b. During this process, sensors 21, 23-29 are physically and electrically disconnected from the amplification circuit 32. For example, when the second sensor 22 is selected by the terminal pillar 35 of the second layer 13b, the second sensor 22 is connected to the amplification circuit 32 via the terminal pillar 35. The signal processing circuit 36 ​​is then configured to perform processing operations corresponding to the second sensor 22.

[0035] As shown in Figure 6, since the sampling frequency is 1 kHz, the second sensor 22 acquires 30,000 data points in 30 seconds. In heart rate variability analysis, the RR interval is analyzed. The signal processing circuit 36 ​​may identify only the peak values ​​indicated by circles according to a predetermined format. The number of data points is compressed to "36". The transmission load on the wireless communication module 37 is reduced. The amount of data transmitted is reduced.

[0036] Alternatively, as shown in Figure 7, the signal processing circuit 36 ​​may identify the frequency characteristics of the pulse. The signal processing circuit 36 ​​performs an FFT on the detection signal of the second sensor 22 according to the signal processing program. The signal processing circuit 36 ​​identifies only the peak values ​​indicated by circles according to a predetermined format. The number of data points is compressed to "6". The transmission load on the wireless communication module 37 is reduced. The amount of data transmitted is reduced.

[0037] In the sensor device 11, a combination of multiple sensors 21 to 29 may be selected. Also, as shown in Figure 8, the sensor device 11 can function as, for example, an acceleration sensor (third sensor 23) for detecting acceleration. The sensor device 11 is incorporated into, for example, equipment 12 and attached to a human body or other subject. For acceleration detection, the signal processing circuit 36 ​​supplies operating current from the third layer 13c to the third sensor 23 and the fourth sensor 24. The third sensor 23 and the fourth sensor 24 output detection signals in accordance with changes in the receiving portion of the cantilever. The detection signals obtained in the first layer 13a are amplified by the amplification circuit 32 of the second layer 13b. The detection signals amplified in the second layer 13b are supplied to the signal processing circuit 36 ​​of the third layer 13c. The signal processing circuit 36 ​​processes the detection signals according to the signal processing program. The detection signals are processed into data in a predetermined format. For example, the data may contain acceleration [m / s²]. 2 ] will be identified.

[0038] When establishing the acceleration sensor, the third sensor 23 and the fourth sensor 24 are selected from sensors 21 to 29 by the wiring (terminal pillar 35) of the second layer 13b. Sensors 21, 22, 25 to 29 other than the third and fourth sensors 23 and 24 are set to be inoperable by the wiring (terminal pillar 35) of the second layer 13b. During this setting, sensors 21, 22, 25 to 29 are physically and electrically disconnected from the amplification circuit 32. When the third sensor 23 and the fourth sensor 24 are selected by the terminal pillar 35 of the second layer 13b, the third sensor 23 and the fourth sensor 24 are connected to the amplification circuit 32 via the terminal pillar 35 provided on the second layer 13b. Processing operations are set in the signal processing circuit 36 ​​corresponding to the third sensor 23 and the fourth sensor 24.

[0039] The signal processing circuit 36 ​​subtracts the detection signal of the fourth sensor 24 from the detection signal of the third sensor 23. The third sensor 23 is, for example, a cantilever with an aperture, identical in configuration to the MEMS sensor 21a shown in Figure 3A, and as shown in Figure 9(A), the cantilever responds to the wave to be detected (load). The fourth sensor 24 is, for example, a cantilever without an aperture, identical in configuration to the MEMS sensor 22a shown in Figure 3A, and as shown in Figure 9(B), it does not respond to the wave to be detected (load). On the other hand, noise due to illuminance, temperature, electromagnetic waves, etc., affects both the third sensor 23 and the fourth sensor 24 equally. As shown in Figure 9(C), the noise in the detection signal of the fourth sensor 24 is subtracted from the detection signal of the third sensor 23, and the noise is removed from the detection signal of the third sensor 23. The detection signals of the third and fourth sensors 23 and 24 are converted into output signals in a predetermined format. The detection signals are thinned out according to the conversion. The transmission load in the wireless communication module 37 is reduced. The amount of data transmitted will decrease.

[0040] In addition, the sensor device 11 can also function as a pulse wave sensor (second sensor 22) that detects pulse waves in response to skin movement. Based on the detection result (pulse rate) of the second sensor 22 and the detection result (temperature) of the ninth sensor 29 (described later), the sensor device 11 outputs data that identifies the correlation between pulse rate and temperature according to a predetermined format. The sensor device 11 is incorporated into the device 12 and worn on the wrist or fingertip. For pulse wave detection, operating current is supplied from the signal processing circuit 36 ​​of the third layer 13c to the second sensor 22 and the ninth sensor 29 of the first layer 13a via the second layer 13b. The ninth sensor 29 is a temperature sensor that detects temperature. The detection signals from the second sensor 22 and the ninth sensor 29 are amplified by the amplification circuit 32 of the second layer 13b. The detection signals amplified by the second layer 13b are supplied to the signal processing circuit 36 ​​of the third layer 13c. The signal processing circuit 36 ​​processes the detection signals according to the signal processing program. The detection signals are processed into data in a predetermined format. Here, sensors 21, 23-28, other than the second sensor 22 and the ninth sensor 29, are disabled by the wiring (terminal pillar 35) of the second layer 13b. During this process, sensors 21, 23-28 are physically and electrically disconnected from the amplification circuit 32. When the second sensor 22 and the ninth sensor 29 are selected by the terminal pillar 35 of the second layer 13b, the second sensor 22 and the ninth sensor 29 are connected to the amplification circuit 32 via the terminal pillar 35 provided on the second layer 13b. The signal processing circuit 36 ​​is configured to perform processing operations corresponding to the second sensor 22 and the ninth sensor 29.

[0041] As shown in Figure 10(A), for example, when the sampling frequency of the second sensor 22 is set to 1 kHz, a pulse waveform is acquired. As shown in Figure 10(B), the signal processing circuit 36 ​​calculates the pulse rate from the time interval between peaks. The time change in pulse rate is identified. As shown in Figure 10(C), the signal processing circuit 36 ​​acquires the temperature from the ninth sensor 29, which changes moment by moment. As shown in Figure 10(D), the signal processing circuit 36 ​​plots the pulse rate against the temperature at the same time. The correlation between pulse rate and temperature is identified. The signal processing circuit 36 ​​generates data according to a predetermined format.

[0042] Changes in physical quantities (or chemical quantities) over time can be obtained from individual sensors 21-29. When multiple sensors 21-29 are combined and linked simultaneously, the correlation between different physical quantities (or chemical quantities) can be acquired in detail and in real time. Sensor fusion is realized. In this way, the detection signals from individual sensors 21-29 are converted into output signals in a predetermined format. The detection signals are thinned out according to the conversion. The transmission load on the wireless communication module 37 is reduced. The amount of data transmitted is reduced.

[0043] In the first embodiment described above, the presence or absence of the terminal pillar 35 allows for the selective functioning of, for example, sensor 21 from among sensors 21 to 29 according to its intended use. However, the selective functioning of, for example, sensor 21 from among sensors 21 to 29 according to its intended use may be achieved by wiring other than the terminal pillar 35. Furthermore, although the terminal pillar 35 is selectively provided on the second layer 13b which is provided with the amplification circuit 32, the present invention is not limited to this. A wiring layer may be provided that does not include various circuits such as the amplification circuit 32, but only has wiring such as the terminal pillar 35 which selectively functions the sensor 21 according to its intended use. In this case, the first layer 13a is assembled by overlapping it onto the substrate surface of the wiring layer, and the wiring layer is assembled by overlapping it onto the substrate surface of the second layer 13b described above.

[0044] Figure 11 schematically shows the configuration of a sensor device 51 according to a second embodiment of the present invention. The second embodiment shows an example in which a selector circuit is provided, and based on a control signal from the selector circuit, one of the first sensors 21 to the ninth sensor 29 is activated, for example, the first sensor 21, depending on the application. The sensor device 51 detects at least one or more physical quantities (or chemical quantities) depending on the application. The sensor device 51 outputs data that identifies the physical quantities (or chemical quantities) according to a predetermined format. The format is determined according to the equipment 12 into which the sensor device 51 is incorporated. The sensor device 51 has a configuration that can detect up to nine types of physical quantities (or chemical quantities), for example. In the sensor device 51, detection of physical quantities (or chemical quantities) other than the physical quantity (or chemical quantity) selected according to the application is disabled. Physical quantities (or chemical quantities) other than the selected physical quantity (or chemical quantity) are different from the selected physical quantity (or chemical quantity). Physical quantities (or chemical quantities) other than the selected physical quantity (or chemical quantity) are different from each other. Different physical quantities (or chemical quantities) are not only different types of physical quantities (or chemical quantities) expressed in different SI units, but also those expressed in equivalent SI units. Different physical quantities (or chemical quantities) expressed in equivalent SI units include the same type of physical quantity (or chemical quantity) detected in different numerical ranges.

[0045] The sensor device 51 comprises a first layer 53a that functions as a sensor layer, a second layer 53b coupled to the first layer 53a and functioning as a signal processing layer, and a third layer 53c coupled to the first layer 53a via the second layer 53b and functioning as both a signal processing layer and a wireless layer. Here, the first layer 53a is assembled by being superimposed on the surface of the second layer 53b. The second layer 53b is assembled by being superimposed on the surface of the third layer 53c.

[0046] On the first layer 53a, multiple sensor blocks 15a-15f and 16a-16c are arranged, similar to the first layer 13a described above. On the second layer 53b, amplification circuits 54 are arranged, each connected to the first to ninth sensors 21-29. On the first layer 53a, input / output terminals 33 and 34 (see Figures 3B and 8) are uniquely arranged for each of the first to ninth sensors 21-29. The operating voltage of the sensor is supplied to the input / output terminal 33, for example, depending on the application. The amplification circuits 54 are connected to the corresponding input / output terminals 34. For connection, terminal pillars 35 (see Figures 3A and 8) are formed on the surface of the second layer 53b. Each terminal pillar 35 is composed of conductive pins that are individually coupled to the first to ninth sensors 21-29. For all sensors 21-29, the corresponding conductive pins are connected to the input / output terminals 33 and 34, respectively.

[0047] On the third layer 53c, a selector circuit 55 is arranged to individually manage the operation of sensors 21-29 based on command signals supplied from the wireless communication module 37. The selector circuit 55 is connected to all amplification circuits 54 and the wireless communication module 37 and includes a signal processing circuit 56 that manages the operation of the selected sensor. The signal processing circuit 56 is connected to input / output terminals 39 and 41 located on the second layer 53b for each amplification circuit 54. Terminal pillars 57 are formed on the surface of the third layer 53c for connection. The terminal pillars 57 consist of conductive pins that are electrically connected to the signal processing circuit 56. The input / output terminals 39 and 41 are connected to input / output terminals 33 and amplification circuits 54, respectively. Vias 43 are used for connection, for example. The amplification voltage (or amplification current) is similarly supplied to the amplification circuits 54 on the second layer 53b from the third layer 53c via other terminal pillars 57 and vias 43.

[0048] The signal processing circuit 56 processes the detection signals output from the selected sensors in order to manage the selected sensors. When processing the detection signals, the signal processing circuit 56 generates output signals according to a predetermined format. The detection signals are processed into data in a predetermined format. In the data, physical quantities (or chemical quantities) are identified according to the predetermined format. The data is output from the wireless communication module 37 to the sensor device 51. Here, the signal processing circuit 56 includes an MCU (microcontroller unit) that processes the detection signals according to a specific signal processing program. The signal processing program is stored in memory for each selected sensor. The signal processing program may process the detection signals based on machine learning.

[0049] The signal processing circuit 56 is connected only to selected sensors according to a specific software program. Electrical signal exchange between the signal processing circuit 56 and sensors other than the selected sensors is blocked. The software program refuses to execute any signal processing program other than the one compatible with the selected sensor. The software program refuses access from the wireless communication module 37 to the MCU except for authorized access. The software program performs some authentication process when accessing the MCU. The MCU executes only the signal processing program compatible with the selected sensor.

[0050] In the sensor device 51, multiple sensors 21 to 29 are arranged on the substrate surface of the first layer 53a. The selector circuit 55 can disable any of the multiple sensors 21 to 29 (for example, the second to ninth sensors 22 to 29), either by disabling the sensors 22 to 29 themselves, or by selecting the detection signals output from the sensors 22 to 29 and stopping their output to other circuits. For example, if the selector circuit 55 disables the second to ninth sensors 22 to 29, the sensor device 51 can operate only the first sensor 21. The first sensor 21 detects a first physical quantity (or chemical quantity). For example, if the selector circuit 55 disables both the first sensor 21 and the third to ninth sensors 23 to 29, the sensor device 51 can operate only the second sensor 22. The second sensor 22 detects a second physical quantity (or chemical quantity). Thus, the sensor device 51 can selectively enable the function of sensors 21 to 29, depending on the application. The sensor device 51 can be easily customized after manufacturing according to the application. Furthermore, compared to the case where sensor devices containing only individual sensors 21 to 29 are individually designed and manufactured, the design and manufacturing of the sensor device are standardized for multiple sensors 21 to 29, resulting in reduced design and manufacturing costs.

[0051] The sensor device 51 includes a wireless communication module 37, which can be connected to multiple sensors 21-29, on a third layer 53c, which is a separate layer from the first layer 53a. When the second to ninth sensors 21-29 are disabled by the selector circuit 55, a signal identifying the first physical quantity (or chemical quantity) is output from the wireless communication module 37. When the first sensor 21 and the third to ninth sensors 23-29 are disabled, a signal identifying the second physical quantity (or chemical quantity) is output from the wireless communication module 37.

[0052] In this embodiment, the sensor device 51 operates a selector circuit 55 based on a command signal received from an external device via a wireless communication module 37. The selector circuit 55 allows for the selective operation of one of the multiple sensors 21 to 29, such as sensor 21, according to its intended use. The inoperability of individual sensors 21 to 29 can be set according to a command signal wirelessly supplied from an external device separate from the sensor device 51. The hardware of the sensor device 51 is not physically modified. Since the hardware manufacturing is standardized for all sensors 21 to 29, manufacturing costs can be reduced.

[0053] The selector circuit 55 includes a signal processing circuit 56 that generates an output signal according to a predetermined format based on the detection signal output from the selected sensor. The detection signal from the selected sensor is converted into an output signal in a predetermined format. The detection signal is thinned out according to the conversion. The transmission load on the wireless communication module 37 is reduced. The amount of data transmitted is reduced.

[0054] In the sensor device 51 according to this embodiment, a corresponding amplification circuit 54 is provided in the second layer 53b for each of the individual sensors 21 to 29. For example, the detection signal of the first sensor 21 is optimally amplified by the corresponding amplification circuit 54. The detection signal of the second sensor 22 is optimally amplified by the corresponding amplification circuit 54. Since there are multiple amplification circuits 54 corresponding to each of the sensors 21 to 29, when the first sensor 21, etc., operates selectively, only the corresponding amplification circuit 54 operates, eliminating the need for individual control of the amplification circuits 54. In this way, the sensor device 51 can generate output signals well even without controlling the amplification circuits 54.

[0055] The signal processing circuit 56 of the sensor device 51 can operate in various ways according to the set signal processing program, similar to the signal processing circuit 36 ​​described above. In the sensor device 51, similar to the sensor device 11 according to the first embodiment, multiple sensors 21 to 29 may be selectively combined to detect various physical quantities (chemical quantities) according to the application. The selector circuit 55 described above may be provided in the first layer 53a, which is the sensor layer. In addition, at the time of product shipment, the sensors to be selectively operated by the selector circuit 55 may be set according to the application.

[0056] In the first and second embodiments described above, configurations in which sensor layers 13a and 51a are provided as the outermost layer were explained. However, the present invention is not limited to this, and any of the multiple layers (for example, layers sandwiched between layers) may be included as sensor layers 13a and 51a. Furthermore, in the first and second embodiments described above, sensor layers 13a and 51a were described in which, for example, only multiple MEMS sensors (first to ninth sensors 21 to 29) are provided as sensor layers. In this case, it is preferable that the sensor layers 13a and 51a are configured to provide only multiple MEMS sensors (first to ninth sensors 21 to 29) manufactured using the same manufacturing method and the same materials, and that other functions such as IC chips, or circuits manufactured using different manufacturing methods or materials not used for MEMS sensors are not mixed in. However, the present invention is not limited to this, and configurations in which selector circuits and the like are provided on the sensor layers 13a and 51a are also possible. [Explanation of Symbols]

[0057] 11.51 Sensor Devices 13a, 53a First layer (sensor layer, layer) 13b, 53b Second layer (signal processing layer, layer) 13c, 53c Third Layer (Signal Processing Layer, Wireless Layer, Layer) 21-29 Sensors (Sensor 1-9) 32 Amplifier Circuit 35 Terminal pillar (terminal) 36, 56 Signal Processing Circuits 37 Wireless Modules 33 First input / output terminal or second input / output terminal 34 First input / output terminal or second input / output terminal 54. First amplifier circuit or second amplifier circuit (amplifier circuit) 55 Selector Circuit

Claims

1. A sensor device in which multiple layers having circuits or wiring are superimposed and assembled, The aforementioned multiple layers include a sensor layer, The aforementioned sensor layer is A first sensor for detecting a first physical or chemical quantity, A second sensor for detecting a second physical or chemical quantity different from the first physical or chemical quantity is provided at least on the substrate surface. Sensor device.

2. The sensor layer or other layers are provided with a selector. The aforementioned selector, Set either the first sensor or the second sensor to be inoperable, and enable the other first or second sensor. The sensor device according to claim 1.

3. The aforementioned plurality of layers include a wireless layer equipped with a wireless communication module. The wireless layer is assembled by being superimposed on the sensor layer, thereby coupling the wireless module to at least one of the first sensor and the second sensor. The sensor device according to claim 1.

4. The aforementioned plurality of layers include a signal processing layer equipped with a signal processing circuit, The signal processing layer is assembled by being superimposed on the sensor layer, thereby coupling the signal processing circuit to at least one of the first sensor and the second sensor, and the signal processing circuit generates an output signal based on the detection signal output from at least one of the first sensor and the second sensor. The sensor device according to claim 1.

5. The aforementioned plurality of layers include a signal processing layer equipped with an amplification circuit, The signal processing layer is assembled by being superimposed on the sensor layer, thereby coupling the amplification circuit to at least one of the first sensor and the second sensor, and the amplification circuit amplifies the detection signal output from at least one of the first sensor and the second sensor. The sensor device according to claim 1.

6. The first sensor and the second sensor are MEMS sensors fabricated on the surface of the substrate. The sensor device according to claim 1.

7. The plurality of layers include a wiring layer on which the wiring is formed, The sensor layer is superimposed on the upper layer of the wiring layer, and the layer containing the circuit is superimposed on the lower layer of the wiring layer, with the wiring of the wiring layer connecting the upper sensor layer and the lower layer. The sensor device according to claim 1.

8. The aforementioned sensor layer includes: A first input / output terminal is provided specifically for the first sensor, The second sensor is provided with a second input / output terminal, At least one of the first input / output terminal and the second input / output terminal is coupled to a terminal provided on the layer by having a layer superimposed on the lower layer of the sensor layer. The sensor device according to claim 1.

9. In a sensor device in which multiple layers having circuits or wiring are superimposed and assembled, a sensor layer included among the multiple layers is A first sensor for detecting a first physical or chemical quantity, A second sensor for detecting a second physical or chemical quantity different from the first physical or chemical quantity is provided at least on the substrate surface. Sensor layer.

10. The back surface of the aforementioned sensor layer substrate is provided with input / output terminals corresponding to each of the multiple sensors. The aforementioned input / output terminals are physically and electrically connected to the superimposed layer. The sensor layer according to claim 9.

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