Plasma processing equipment

Abstract

The goal is to achieve high plasma density while enabling uniform plasma processing in the radial direction of the rotary table. [Solution] The plasma processing apparatus comprises a processing vessel, a rotary table, a dielectric, an electromagnetic wave generator, an electromagnetic wave supply unit, and a resonator array structure. The processing vessel provides a processing space. The rotary table has a substrate mounting area formed on one side for horizontally mounting a substrate, and the substrate mounting area is rotatable within the processing vessel. The dielectric is provided with its first surface facing a first space, which is part of the processing space. The electromagnetic wave generator generates electromagnetic waves to be supplied to the first space. The electromagnetic wave supply unit is positioned above the dielectric and supplies electromagnetic waves to the first space. The resonator array structure includes a plurality of resonators that are resonant with the magnetic field component of the electromagnetic wave and whose size is smaller than the wavelength of the electromagnetic wave, and is arranged along the first surface of the dielectric. The electromagnetic wave supply unit supplies electromagnetic waves to the first space that include a magnetic field component perpendicular to the plane on which the plurality of resonators are arranged.

Description

[Technical Field]

[0001] This disclosure relates to a plasma processing apparatus. [Background technology]

[0002] Patent Document 1 discloses "a plasma processing apparatus comprising: a processing chamber; a rotary table provided within the processing chamber on which a substrate can be placed on its upper surface along the circumferential direction; and a plasma generator having an antenna provided above the upper surface of the processing chamber so as to be movable in the radial direction of the rotary table, and capable of locally irradiating the rotary table with plasma in the radial direction." [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2017-183379 [Overview of the project] [Problems that the invention aims to solve]

[0004] This disclosure provides a plasma processing apparatus that can perform uniform plasma processing in the radial direction of a rotary table while achieving high plasma density. [Means for solving the problem]

[0005] A plasma processing apparatus according to one aspect of the present disclosure comprises a processing vessel, a rotary table, a dielectric, an electromagnetic wave generator, an electromagnetic wave supply unit, and a resonator array structure. The processing vessel provides a processing space. The rotary table has a substrate mounting area formed on one side for horizontally mounting a substrate, and is configured to be rotatable within the processing vessel. The dielectric is provided with its first surface facing a first space, which is part of the processing space. The electromagnetic wave generator is configured to generate electromagnetic waves for plasma excitation that are supplied to the first space. The electromagnetic wave supply unit is positioned above the dielectric and is configured to supply electromagnetic waves to the first space via the dielectric. The resonator array structure includes a plurality of resonators that are resonant with the magnetic field component of the electromagnetic wave and whose size is smaller than the wavelength of the electromagnetic wave, and is arranged along the first surface of the dielectric. The electromagnetic wave supply unit also supplies electromagnetic waves to the first space that include a magnetic field component perpendicular to the plane on which the plurality of resonators are arranged. [Effects of the Invention]

[0006] According to this disclosure, it is possible to achieve high plasma density while performing uniform plasma processing in the radial direction of the rotary table. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic longitudinal cross-sectional view showing an example of a plasma processing apparatus according to the first embodiment of this disclosure. [Figure 2] Figure 2 is a schematic plan view showing an example of a plasma processing apparatus according to the first embodiment. [Figure 3] Figure 3 is a cross-sectional view showing an example of a cross-section along the concentric circles of the rotary table of the plasma processing apparatus according to the first embodiment. [Figure 4] Figure 4 is a longitudinal cross-sectional view showing an example of a plasma generator in a plasma processing apparatus according to the first embodiment. [Figure 5] Figure 5 is an exploded perspective view showing an example of a plasma generator in a plasma processing apparatus according to the first embodiment. [Figure 6]Figure 6 is a perspective view showing an example of a housing provided in a plasma generator of a plasma processing apparatus according to the first embodiment. [Figure 7] Figure 7 is a plan view showing an example of the plasma generator viewed from the downward direction. [Figure 8] Figure 8 is a transparent view showing an example of the arrow view B in Figure 7. [Figure 9] Figure 9 is a diagram showing an example of a plane of a single resonator according to the first embodiment. [Figure 10] Figure 10 is a cross-sectional view showing an example of the C-C cross section in Figure 9. [Figure 11] Figure 11 is a cross-sectional view showing an example of the D-D cross section in Figure 10. [Figure 12] Figure 12 is a cross-sectional view showing an example of the E-E cross section in Figure 10. [Figure 13] Figure 13 is a diagram showing an example of the relationship between the transmission characteristic value (S21 value) of the resonator and the frequency of electromagnetic waves. [Figure 14] Figure 14 is a diagram showing an example of a simulation model. [Figure 15] Figure 15 is an enlarged view showing an example of the vicinity of the sheath of the simulation model. [Figure 16] Figure 16 is a diagram showing an example of simulation results when the relative permeability of the top plate is a positive value. [Figure 17] Figure 17 is a diagram showing an example of simulation results when the relative permeability of the top plate is a negative value. [Figure 18] Figure 18 is a diagram showing an example of the relationship between power absorption efficiency and electron density at the central portion. [Figure 19] Figure 19 is a transparent view showing an example of a resonator array structure of a plasma generator according to Modification 1. [Figure 20] Figure 20 is a plan view showing an example of a plasma generator according to Modification 2 viewed from the downward direction. [Figure 21] Figure 21 is a transparent view showing an example of the arrow view F in Figure 20. [Figure 22]Figure 22 is a plan view showing an example of the plasma generator according to Modification 3 as viewed from below. [Figure 23] Figure 23 is a perspective view showing an example of the view along arrow G in Figure 22. [Figure 24] Figure 24 is a plan view showing an example of the plasma generator according to Modification 4 as viewed from below. [Figure 25] Figure 25 is a perspective view showing an example of the view along arrow H in Figure 24. [Figure 26] Figure 26 is a plan view showing an example of the plasma generator according to Modification 5 as viewed from above. [Figure 27] Figure 27 is a plan view showing an example of the plasma generator according to Modification 6 as viewed from above. [Figure 28] Figure 28 is a plan view showing an example of the plasma generator according to Modification 7 as viewed from above. [Figure 29] Figure 29 is a plan view showing an example of the plasma generator according to Modification 8 as viewed from above. [Figure 30] Figure 30 is a plan view showing an example of the plasma generator according to Modification 9 as viewed from above. [Figure 31] Figure 31 is a plan view showing an example of the plasma generator according to Modification 10 as viewed from above. [Figure 32] Figure 32 is a plan view showing an example of the plasma generator according to Modification 11 as viewed from above. [Figure 33] Figure 33 is a plan view showing an example of the plasma generator according to Modification 12 as viewed from above. [Figure 34] Figure 34 is a plan view showing an example of the plasma generator according to the second embodiment as viewed from above. [Figure 35] Figure 35 is a cross-sectional view showing an example of the I-I cross section in Figure 34. [Figure 36] Figure 36 is a plan view showing an example of the plasma generator according to Modification 13 as viewed from above. [Figure 37] Figure 37 is a cross-sectional view showing an example of the J-J cross section in Figure 36. [Figure 38]Figure 38 is a plan view showing an example of a plasma generator according to Modification 14, viewed from above. [Figure 39] Figure 39 is a plan view showing an example of a plasma generator according to Modification 15, viewed from above. [Figure 40] Figure 40 is a plan view showing an example of a plasma generator according to modified example 16, viewed from above. [Figure 41] Figure 41 is a plan view showing an example of a plasma generator according to Modification 17, viewed from above. [Figure 42] Figure 42 is a plan view showing an example of a plasma generator according to modified example 18, viewed from above. [Figure 43] Figure 43 is a plan view showing an example of a plasma generator according to Modification 19, viewed from above. [Figure 44] Figure 44 is a block diagram showing an example of the functional configuration of an RF power supply according to the third embodiment. [Figure 45] Figure 45 is a block diagram showing an example of the functional configuration of the modulation unit according to the third embodiment. [Figure 46] Figure 46 shows an example of the settings for the resonant frequency of the resonator and the output of the RF power supply according to the third embodiment. [Figure 47] Figure 47 is a schematic cross-sectional view showing an example of plasma generation according to the third embodiment. [Figure 48] Figure 48 is a plan view showing an example of the upper surface of a single resonator according to the fourth embodiment. [Figure 49] Figure 49 is a cross-sectional view showing an example of the KK section shown in Figure 48. [Figure 50] Figure 50 is a plan view showing an example of the lower surface of a single resonator according to the fourth embodiment. [Figure 51] Figure 51 is a schematic longitudinal cross-sectional view showing an example of a plasma processing apparatus according to the fifth embodiment. [Figure 52] Figure 52 is a schematic plan view showing an example of a plasma processing apparatus according to the fifth embodiment. [Modes for carrying out the invention]

[0008] The embodiments of the plasma processing apparatus disclosed below will be described in detail below with reference to the drawings. However, the disclosed technology is not limited to the embodiments described below.

[0009] Incidentally, in plasma processing equipment that uses microwaves for plasma excitation, the power of the microwaves supplied into the processing vessel is sometimes increased to increase the electron density of the plasma. The higher the power of the microwaves supplied into the processing vessel, the higher the electron density of the plasma can be.

[0010] Here, it is known that when the electron density of the plasma reaches a certain upper limit by increasing the power of the microwaves supplied into the processing vessel, the dielectric constant of the space inside the processing vessel becomes negative. This upper limit of electron density is appropriately called the "cutoff density." In addition, the refractive index is known as an indicator of whether microwaves propagate through space or not. The refractive index N is expressed by the following equation (1). N = √ε√μ ···(1) However, ε is the permittivity and μ is the permeability.

[0011] Since magnetic permeability is generally positive, if the dielectric constant of the space inside the processing container is negative, then according to equation (1) above, the refractive index of the space inside the processing container becomes a purely imaginary number. As a result, microwaves are attenuated and cannot propagate through the space inside the processing container. Thus, when the electron density of the plasma reaches the cutoff density, microwaves cannot propagate through the space inside the processing container, and the power of the microwaves is not sufficiently absorbed by the plasma. Consequently, there is a problem in that the densification of the plasma generated over a wide area inside the processing container is hindered. Although microwaves were explained above as an example, similar problems exist in plasma processing equipment using electromagnetic waves in the shortwave (HF) to ultra-high frequency (UHF) bands.

[0012] Furthermore, in plasma processing equipment that performs plasma processing by rotating a rotary table on which a substrate is placed, the linear velocity along the circumference changes between the inner and outer regions. As a result, the uniformity of plasma processing can decrease between the inner region, where the linear velocity along the circumference is slow and the amount of plasma processing tends to be large, and the outer region, where the linear velocity is high and the amount of plasma processing tends to be insufficient. Therefore, it is expected that uniform plasma processing can be achieved in the radial direction of the rotary table while increasing the density of the plasma.

[0013] (First Embodiment) [Configuration of Plasma Processing System] Figure 1 is a schematic longitudinal cross-sectional view showing an example of a plasma processing apparatus according to the first embodiment of this disclosure. Figure 2 is a schematic plan view showing an example of a plasma processing apparatus according to the first embodiment. Note that in Figure 2, the top plate 11 is omitted from the drawing for the sake of explanation.

[0014] As shown in Figure 1, the plasma processing apparatus 1 according to the first embodiment comprises a vacuum vessel 1a having a planar shape that is generally circular, and a rotary table 2 provided inside the vacuum vessel 1a, having a rotation center at the center of the vacuum vessel 1a, and for revolving a wafer W. The plasma processing apparatus 1 according to the embodiment of this disclosure can be applied to the entire substrate processing process in which a substrate is placed along the circumferential direction of the rotary table 2 and the rotary table 2 is rotated to perform plasma processing, and can be applied not only to film deposition apparatuses but also to annealing apparatuses and the like. However, in this embodiment, an example in which the plasma processing apparatus 1 is applied to a film deposition apparatus will be given below for explanation.

[0015] The vacuum vessel 1a is a processing chamber for processing substrates inside. The vacuum vessel 1a comprises a top plate (ceiling) 11 positioned opposite the recess 24 of the rotary table 2 (described later), and a container body 12. A ring-shaped sealing member 13 is provided on the periphery of the upper surface of the container body 12. The top plate 11 is configured to be detachable from the container body 12. The diameter dimension (internal diameter dimension) of the vacuum vessel 1a in plan view is not limited, but can be approximately 1100 mm, for example.

[0016] A separation gas supply pipe 51 is connected to the central part of the upper surface of the vacuum vessel 1a to supply separation gas in order to suppress the mixing of different processing gases in the central region CA of the vacuum vessel 1a.

[0017] The rotary table 2 is fixed at its center to a roughly cylindrical core 21, and is rotatable around a vertical axis, clockwise in the example shown in Figure 2, by a drive unit 23, with respect to a rotation axis 22 that is connected to the lower surface of the core 21 and extends vertically. The diameter of the rotary table 2 is not limited, but can be, for example, about 1000 mm.

[0018] The rotating shaft 22 and the drive unit 23 are housed in a case body 20, the upper flange portion of which is airtightly attached to the lower surface of the bottom portion 14 of the vacuum vessel 1a. A purge gas supply pipe 72 is also connected to the case body 20 for supplying nitrogen gas or the like as a purge gas (separation gas) to the area below the rotary table 2.

[0019] The outer circumference of the core portion 21 at the bottom surface 14 of the vacuum container 1a is formed in a ring shape to approach the rotating table 2 from below, forming a protruding portion 12a.

[0020] On the surface of the rotary table 2, circular recesses 24 are formed as substrate mounting areas for placing a wafer W with a diameter of, for example, 300 mm. These recesses 24 are provided at multiple locations, for example, five locations, along the rotation direction of the rotary table 2. The recesses 24 have an inner diameter that is slightly larger than the diameter of the wafer W, specifically about 1 mm to 4 mm larger. The depth of the recesses 24 is approximately equal to the thickness of the wafer W, or greater than the thickness of the wafer W. Therefore, when the wafer W is placed in the recesses 24, the surface of the wafer W and the surface of the area of ​​the rotary table 2 where the wafer W is not placed are at the same height, or the surface of the wafer W is lower than the surface of the rotary table 2. Note that even if the depth of the recesses 24 is greater than the thickness of the wafer W, if it is too deep, it may affect the film deposition, so it is preferable to limit the depth to about three times the thickness of the wafer W.

[0021] The bottom surface of the recess 24 has through holes (not shown) through which, for example, three lifting pins (described later) pass, which are used to push up and lower the wafer W from below.

[0022] As shown in Figure 2, multiple nozzles, for example, five nozzles made of quartz, are arranged radially around the circumferential direction of the vacuum vessel 1a at intervals from each other, opposite the passage area of ​​the recess 24 on the rotary table 2. Each of these nozzles 31, 32, 33, 41, and 42 is positioned between the rotary table 2 and the top plate 11. Furthermore, each of these nozzles 31, 32, 33, 41, and 42 is mounted so as to extend horizontally from the outer peripheral wall of the vacuum vessel 1a toward the central region CA, facing the wafer W.

[0023] In the example shown in Figure 2, the separation gas nozzle 42, the first plasma processing gas nozzle 32, the second plasma processing gas nozzle 33, and the separation gas nozzle 41 are arranged in this order, clockwise from the raw material gas nozzle 31 (the direction of rotation of the rotary table 2). However, the film deposition apparatus according to this embodiment is not limited to this configuration, and the rotation direction of the rotary table 2 may also be counterclockwise. In this case, the separation gas nozzle 42, the first plasma processing gas nozzle 32, the second plasma processing gas nozzle 33, and the separation gas nozzle 41 are arranged in this order, counterclockwise from the raw material gas nozzle 31.

[0024] As shown in Figure 2, a plasma generator 80 is provided above the first plasma processing gas nozzle 32 and the second plasma processing gas nozzle 33 to activate the gas discharged from each plasma processing gas nozzle. Details of the plasma generator 80 will be described later.

[0025] In this embodiment, an example is shown in which one nozzle is placed in each processing area, but a configuration in which multiple nozzles are placed in each processing area is also possible. For example, the first plasma processing gas nozzle 32 may be composed of multiple plasma processing gas nozzles, each supplied with argon (Ar) gas, oxidizing gas or nitriding gas, hydrogen (H2) gas, etc., or it may be configured with only one plasma processing gas nozzle, supplied with a mixed gas of argon gas, oxidizing or nitriding gas and hydrogen gas.

[0026] The raw material gas nozzle 31 constitutes the raw material gas supply unit. The first plasma processing gas nozzle 32 constitutes the first plasma processing gas supply unit, and the second plasma processing gas nozzle 33 constitutes the second plasma processing gas supply unit. Furthermore, the separation gas nozzles 41 and 42 each constitute the separation gas supply unit. The separation gas may also be called the purge gas, as described above.

[0027] Each nozzle 31, 32, 33, 41, and 42 is connected to a gas supply source (not shown) via a flow control valve.

[0028] The raw material gas supplied from the raw material gas nozzle 31 is selected from various processing gases depending on the application. For example, silicon-containing gases are one example of raw material gases. Further examples of silicon-containing gases include DCS [dichlorosilane], disilane (Si2H6), HCD [hexachlorodisilane], DIPAS [diisopropylaminosilane], 3DMAS [trisdimethylaminosilane], and BTBAS [bistallbutylaminosilane].

[0029] In addition to silicon-containing gases, metal-containing gases such as TiCl4 [titanium tetrachloride], Ti(MPD)(THD) [titanium methylpentane dionato bistetramethylheptane dionato], TMA [trimethylaluminum], TEMAZ [tetrakisethylmethylaminozirconium], TEMHF [tetrakisethylmethylaminohafnium], and Sr(THD)2 [strontium bistetramethylheptane dionato] may also be used as raw material gases supplied from the raw material gas nozzle 31.

[0030] The first plasma processing gas supplied from the first plasma processing gas nozzle 32 is selected as a reaction gas capable of reacting with the raw material gas supplied from the raw material gas nozzle 31 to produce reaction products. Generally, an oxidizing gas used for forming an oxide film or a nitriding gas used for forming a nitride film is selected. Examples of oxidizing gases include oxygen-containing gases such as ozone, oxygen, and water. Examples of nitriding gases include nitrogen-containing gases such as ammonia (NH3). In addition to the reaction gas that reacts with the raw material gas, such as an oxidizing gas or a nitriding gas to produce reaction products, the first plasma processing gas may also contain H2 gas, Ar, etc., as needed. In that case, a mixture of these gases is supplied from the first plasma processing gas nozzle 32 and plasmaized by the plasma generator 80.

[0031] The second plasma processing gas supplied from the second plasma processing gas nozzle 33 is selected to contain a reaction gas similar to that of the first plasma processing gas, in order to perform a treatment aimed at modifying the generated reaction products. For example, if the first plasma processing gas is an oxidizing gas, the second plasma processing gas will also be an oxidizing gas, and if the first plasma processing gas is a nitriding gas, the second plasma processing gas will also be a nitriding gas. Even if reaction products are generated by the reaction between the raw material gas and the first plasma processing gas, if the oxidation or nitriding is insufficient, a high-density, high-quality film cannot be obtained. Therefore, a modified gas similar to the reaction gas is supplied from the second plasma processing gas nozzle 33.

[0032] Examples of separation gases supplied from separation gas nozzles 41 and 42 include nitrogen (N2) gas.

[0033] As mentioned above, in the example shown in Figure 2, the separation gas nozzle 42, the first plasma processing gas nozzle 32, the second plasma processing gas nozzle 33, and the separation gas nozzle 41 are arranged in this order clockwise (the direction of rotation of the rotary table 2) from the raw material gas nozzle 31. In other words, in the actual processing of the wafer W, the wafer W on which the raw material gas supplied from the raw material gas nozzle 31 has adsorbed is exposed to gases in the following order: separation gas from the separation gas nozzle 42, reaction gas from the first plasma processing gas nozzle 32, reforming gas from the second plasma processing gas nozzle 33, and separation gas from the separation gas nozzle 41.

[0034] On the lower side (the side facing the rotary table 2) of these nozzles 31, 32, 33, 41, and 42, gas discharge holes 35 for discharging the aforementioned gases are formed at multiple locations, for example, at equal intervals along the radial direction of the rotary table 2 (see Figure 3). Each of the lower edges of each nozzle 31, 32, 33, 41, and 42 is positioned such that the distance between it and the upper surface of the rotary table 2 is, for example, about 1 to 5 mm.

[0035] The region below the raw material gas nozzle 31 is a first processing region P1 for adsorbing Si-containing gas onto the wafer W. The region below the first plasma processing gas nozzle 32 becomes a second processing region P2 for performing a first plasma treatment on the thin film on the wafer W, and the region below the second plasma processing gas nozzle 33 becomes a third processing region P3 for performing a second plasma treatment on the thin film on the wafer W.

[0036] Figure 3 is a cross-sectional view showing an example of a cross-section along the concentric circles of the rotary table of the plasma processing apparatus according to the first embodiment. Note that Figure 3 is a cross-sectional view from the separation region DA through the first processing region P1 to the separation region DA.

[0037] The top plate 11 of the vacuum vessel 1a in the separation region DA is provided with a roughly fan-shaped convex portion 4. The convex portion 4 is attached to the underside of the top plate 11, and inside the vacuum vessel 1a, a flat, low ceiling surface 44 (first ceiling surface), which is the underside of the convex portion 4, and ceiling surfaces 45 (second ceiling surfaces), which are located on both sides of the circumferential direction of this ceiling surface 44 and are higher than the ceiling surface 44, are formed.

[0038] As shown in Figure 2, the convex portion 4 that forms the ceiling surface 44 has a fan-shaped planar form with its top cut in an arc. A groove 43 is formed in the circumferential center of the convex portion 4, extending radially, and the separation gas nozzles 41 and 42 are housed within this groove 43. The peripheral edge of the convex portion 4 (the outer edge side of the vacuum container 1a) is bent in an L-shape, facing the outer end surface of the rotary table 2 and slightly separated from the container body 12, in order to prevent mixing of the different processing gases.

[0039] A nozzle cover 230 is provided above the raw material gas nozzle 31 to allow the first processing gas to flow along the wafer W, and to allow the separated gas to flow along the top plate 11 of the vacuum container 1a, avoiding the vicinity of the wafer W. As shown in Figure 3, the nozzle cover 230 comprises a roughly box-shaped cover body 231 with an opening on the bottom to house the raw material gas nozzle 31, and a plate-like flow straightening plate 232 connected to the upstream and downstream sides of the rotational direction of the rotary table 2 at the bottom opening end of the cover body 231. The side wall surface of the cover body 231 on the rotational center side of the rotary table 2 extends toward the rotary table 2 so as to face the tip of the raw material gas nozzle 31. In addition, the side wall surface of the cover body 231 on the outer edge side of the rotary table 2 is cut out so as not to interfere with the raw material gas nozzle 31.

[0040] Next, the plasma generators 80, each positioned above the plasma processing gas nozzles 32 and 33, will be described in detail. In this embodiment, each plasma generator 80 can perform independent plasma processing.

[0041] Figure 4 is a longitudinal cross-sectional view showing an example of a plasma generator of the plasma processing apparatus according to the first embodiment. Figure 5 is an exploded perspective view showing an example of a plasma generator of the plasma processing apparatus according to the first embodiment. Figure 6 is a perspective view showing an example of a housing provided in the plasma generator of the plasma processing apparatus according to the first embodiment.

[0042] The plasma generator 80 is constructed by winding an antenna 83, formed from a metal wire or the like, in a coil shape, for example, three times around a vertical axis. The plasma generator 80 is positioned so as to surround a strip-shaped region extending radially across the rotary table 2 in a plan view, and to straddle the diameter portion of the wafer W on the rotary table 2.

[0043] The antenna 83 is connected via a matching unit 84 to an RF (Radio Frequency) power supply 85 with a frequency of, for example, 13.56 MHz and an output power of, for example, 5000 W. The antenna 83 is installed so as to be hermetically separated from the internal region of the vacuum container 1a. In Figure 4, a connecting electrode 86 is provided for electrically connecting the antenna 83, the matching unit 84, and the RF power supply 85.

[0044] The RF power supply 85 is coupled to the antenna 83 and configured to generate a source RF signal (source RF power) for plasma generation via at least one impedance matching circuit (e.g., a matching circuit 84). In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 3000 MHz. In one embodiment, the RF power supply 85 may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to the antenna 83. The RF power supply 85 is an example of an electromagnetic wave generator and an example of a high-frequency power supply, as described above. The antenna 83 is an example of an electromagnetic wave supply unit.

[0045] Furthermore, the antenna 83 includes a solenoid-shaped coil. In other words, the antenna 83 is wound in a loop shape. The opening of the antenna 83 can be circular, elliptical, or polygonal (square, triangle, etc.). An RF power supply 85 is connected to the antenna 83, and a source RF signal is supplied to it. The magnetic field generated by the antenna 83 is in the direction of the rotation axis 22 of the rotary table 2.

[0046] Furthermore, the antenna 83 may include one or more coils. In one embodiment, the antenna 83 may include an outer coil and an inner coil arranged coaxially. In this case, the RF power supply 85 may be connected to both the outer coil and the inner coil, or to either the outer coil or the inner coil. In the former case, the same RF generating unit within the RF power supply 85 may be connected to both the outer coil and the inner coil, or separate RF generating units may be connected to the outer coil and the inner coil separately. In one embodiment, the antenna 83 is a planar coil and may be formed in a substantially circular spiral shape (planar spiral shape). That is, the antenna 83 is wound in a loop shape.

[0047] Furthermore, if the antenna 83 includes an outer coil and an inner coil, the outer coil functions as a primary coil to which the RF power supply 85 is connected. In one embodiment, the outer coil is a planar coil and is formed in a substantially circular spiral shape. The inner coil functions as a secondary coil that inductively couples with the primary coil. That is, the inner coil is not connected to the RF power supply 85. In one embodiment, the inner coil is a planar coil and is formed in a substantially circular ring shape. In one embodiment, the inner coil is connected to a variable capacitor, and the direction and magnitude of the current flowing through the inner coil are controlled by controlling the capacitance of the variable capacitor. The outer coil and the inner coil may be placed at the same height or at different heights. In one embodiment, the inner coil is placed at a lower position than the outer coil.

[0048] As shown in Figures 4 and 5, the top plate 11 above the first plasma processing gas nozzle 32 has an opening 11a that opens in a roughly fan shape when viewed from above.

[0049] As shown in Figure 4, the opening 11a is provided with a housing 90 to position the antenna 83 below the top plate 11.

[0050] As shown in Figures 5 and 6, the housing 90 has an upper peripheral edge that extends horizontally in a flange-like manner in the circumferential direction, forming a flange portion 90a, and in a plan view, the central portion 93 is formed to be recessed toward the internal region of the vacuum vessel 1a below. The resonator array structure 300, which will be described later, is arranged in the central portion 93. The housing 90 and the central portion 93 (dielectric) are examples of a sector shape enclosed by two sides radiating from the center of the rotary table 2.

[0051] The housing 90 is positioned so as to straddle the diameter portion of the wafer W in the radial direction of the rotary table 2 when the wafer W is located below the housing 90. A sealing member 11c, such as an O-ring, is provided between the housing 90 and the top plate 11. The housing 90 is made of, for example, a dielectric material. In other words, the central portion 93 is made of a dielectric material.

[0052] The internal atmosphere of the vacuum container 1a is airtight through the housing 90. Specifically, when the housing 90 is dropped into the opening 11a described above, the flange portion 90a and the lowest step portion 11b of the stepped portions 11b lock together. The stepped portion 11b (top plate 11) and the housing 90 are then airtightly connected by the O-ring 11d described above. Furthermore, the flange portion 90a is pressed downwards in the circumferential direction by a pressing member 91 formed in the shape of a frame along the outer edge of the opening 11a, and this pressing member 91 is fixed to the top plate 11 by bolts (not shown), thereby airtightly establishing the internal atmosphere of the vacuum container 1a.

[0053] As shown in Figure 6, a projection 92 is formed on the lower surface of the housing 90, extending perpendicularly toward the rotary table 2 so as to surround the processing areas P2 and P3 on the lower side of the housing 90 along the circumferential direction. The area enclosed by the inner circumferential surface of this projection 92, the lower surface of the housing 90, and the upper surface of the rotary table 2 houses the first plasma processing gas nozzle 32 and the second plasma processing gas nozzle 33 described above. The projection 92 at the base end (on the inner wall side of the vacuum vessel 1a) of the first plasma processing gas nozzle 32 and the second plasma processing gas nozzle 33 is cut out in a roughly arc shape to conform to the outer shape of the second plasma processing gas nozzle 33. When viewed from the lower side of the housing 90, the resonator array structure 300 is located via the central portion 93.

[0054] As shown in Figure 4, a projection 92 is formed on the lower side of the housing 90, extending circumferentially. The sealing member 11c is not directly exposed to the plasma by this projection 92, that is, it is isolated from the plasma generation region. Therefore, even if plasma attempts to diffuse from the plasma generation region towards the sealing member 11c, it will pass below the projection 92, and thus the plasma will be deactivated before reaching the sealing member 11c.

[0055] A resonator array structure 300 is positioned above the housing 90, roughly following the internal shape of the housing 90. That is, the plasma generators 80 are positioned to face the inside of the vacuum vessel 1a (the wafer W on the rotating table 2) via the resonator array structure 300 and the housing 90, respectively.

[0056] The resonator array structure 300 is formed by arranging multiple resonators that are capable of resonating with the magnetic field component of an electromagnetic wave and whose size is smaller than the wavelength of the electromagnetic wave, and is located, for example, at the top of the central part 93 of the housing 90, as shown in Figures 4 and 5. In the following description, the resonator array structure may be referred to as a metamaterial, and a resonator may be referred to as a metaatom.

[0057] The resonator array structure 300 is located above the central part 93 of the housing 90, allowing the electromagnetic waves supplied to the processing regions P2 and P3 by the antenna 83 to resonate with the multiple resonators of the resonator array structure 300. This resonance between the electromagnetic waves and the multiple resonators allows for efficient supply of electromagnetic waves to the processing regions P2 and P3 of the vacuum vessel 1a, and also makes the permeability of the processing regions P2 and P3 negative. When the permeability of the processing regions P2 and P3 is negative, even if the electron density of the plasma generated within the processing regions P2 and P3 reaches the cutoff density and the dielectric constant of the processing regions P2 and P3 is negative, the refractive index becomes a real number according to equation (1) above, allowing electromagnetic waves to propagate within the processing regions P2 and P3. As a result, even when the electron density of the plasma generated within the processing regions P2 and P3 reaches the cutoff density, electromagnetic waves can propagate beyond the plasma skin depth, and the power of the electromagnetic waves is efficiently absorbed by the plasma. Consequently, a high-density plasma can be generated over a wide area beyond the plasma skin depth. In other words, according to the plasma processing apparatus of this embodiment, the resonator array structure 300 is located on the upper part of the central portion 93 of the housing 90, thereby enabling high-density plasma distribution over a wide area.

[0058] Here, the detailed configuration of the resonator array structure 300 will be described with reference to Figures 7 and 8. Figure 7 is a plan view showing an example of a plasma generator viewed from below. Figure 8 is a transmission view showing an example of the view indicated by arrow B in Figure 7. In Figure 7, the lower surface of the housing 90 is shown in a roughly fan shape, and the resonator array structure 300 is shown through it.

[0059] As shown in Figures 4 to 8, the resonator array structure 300 is positioned along the upper surface of the central portion 93 of the dielectric housing 90.

[0060] The resonator array structure 300 is formed by arranging a plurality of resonators 301, each capable of resonating with the magnetic field component of an electromagnetic wave and having a size smaller than the wavelength of the electromagnetic wave, at approximately equal intervals. Specifically, as shown in Figure 7, the plurality of resonators 301 are arranged in the flat resonator array structure 300 in a direction along the lower surface of the central portion 93 of the dielectric housing 90 (in the direction of a plane parallel to the lower surface of the central portion 93). In other words, when viewed from the recess 24 side of the rotary table 2 on which the wafer W is placed, the C-shaped ring members 311, which are shown when transmitted, are arranged so that the C shape is visible. Here, the arrangement so that the C shape is visible means that the C-shaped ring members 311 are arranged so that their ring shape can be seen. In the resonator array structure 300, for example, the resonators 301 are arranged at approximately equal intervals. In this case, as shown in Figure 8, the boundaries of each of the multiple resonators 301 are represented as boundaries 305, but in reality, the multiple resonators 301 are formed as a single unit as a resonator array structure 300. Alternatively, the multiple resonators 301 may be formed separately and fitted into a frame or bonded to each other to form the resonator array structure 300. Each of the multiple resonators 301 constitutes a series resonant circuit consisting of a capacitor equivalent element and a coil equivalent element. The series resonant circuit is realized by patterning a conductor on a plane. The magnetic field generated by the antenna 83 is in a direction that penetrates the C-shaped ring member 311.

[0061] As shown in Figure 8, in the view from arrow B in Figure 7, the resonator array structure 300 appears as a series of cross-sections of multiple resonators 301. The boundaries of each of the multiple resonators 301 are represented by boundaries 305.

[0062] Figure 9 is a diagram showing an example of a plan view of a single resonator according to the first embodiment. Figure 10 is a cross-sectional view showing an example of a CC cross-section of Figure 9. In Figures 9 and 10, a plan view 150 of a single resonator 301 and a cross-sectional view 151 of the CC cross-section of the plan view 150 are shown, with one resonator 301 being an example from among a plurality of resonators 301 formed as a single unit. As shown in the plan view 150 and the cross-sectional view 151, a single resonator 301 is located within a region enclosed by a boundary 305. In other words, in this embodiment, the resonator 301 is a state in which two C-shaped ring members 311 are each surrounded by a dielectric 312. Note that the boundary 305 is not limited to a rectangle, but may be any shape as long as the C-shaped ring members 311 of adjacent resonators 301 do not come into contact.

[0063] Figure 11 is a cross-sectional view showing an example of the DD cross-section of Figure 10. Figure 12 is a cross-sectional view showing an example of the EE cross-section of Figure 10. As shown in cross-sectional view 151 of Figure 10, Figure 11 and Figure 12, a single resonator 301 has a structure in which a dielectric 312 is placed between two C-shaped ring members 311 made of conductors, which are adjacent to each other and facing opposite directions. That is, in the resonator 301, the dielectric 312 is sandwiched between two C-shaped ring members 311 that are facing opposite directions. Capacitor equivalent elements are formed on the opposing surfaces of the two C-shaped ring members 311 and at both ends of each ring member 311, and coil equivalent elements are formed along each ring member 311. As a result, the resonator 301 can constitute a series resonant circuit. In the resonator 301 shown in Figures 10 to 12, the number of C-shaped ring members 311 (hereinafter also referred to as "number of layers") is 2, but the number of layers of C-shaped ring members 311 may be greater than 2. In this case, the resonator 301 has a structure in which C-shaped ring members 311 are arranged adjacent to each other in opposite directions, and dielectric 312 is arranged between the C-shaped ring members 311.

[0064] Refer to Figure 1 again. The control unit 120 has a processor, memory, and an input / output interface. The memory stores programs and process recipes, etc. The programs and process recipes, etc. may be installed into the control unit 120 from a storage unit 121, which is a storage medium such as a hard disk, compact disk, magneto-optical disk, memory card, or flexible disk. The processor reads and executes programs from the memory, and based on the process recipes stored in the memory, it controls each part of the plasma processing apparatus 1 via the input / output interface.

[0065] The control unit 120 controls the electromagnetic waves supplied to the processing regions P2 and P3 by the antenna 83 to resonate with the multiple resonators 301 in a target frequency band higher than the resonant frequencies of the multiple resonators 301 when plasma is generated in the processing regions P2 and P3. Here, the resonant frequency is, for example, the transmission characteristic value of the multiple resonators 301 (for example, S 21 This is the frequency at which the value ( ) becomes a local minimum.

[0066] Here, we will explain the resonant frequency of the resonator 301 using Figure 13. Figure 13 shows the transmission characteristic value (S) of the resonator. 21 This figure shows an example of the relationship between the S value and the frequency of electromagnetic waves. When the frequency of the electromagnetic waves supplied to processing areas P2 and P3 by antenna 83 matches the resonant frequency Fr (= approximately 2.35 GHz) of each resonator 301, the S value of each resonator 301 21The value becomes a minimum, and resonance occurs between the electromagnetic wave and each resonator 301. Although Figure 13 uses microwaves as an example of electromagnetic waves, the same applies to VHF band electromagnetic waves. The resonance between the electromagnetic wave and each resonator 301 is maintained even in a predetermined frequency band (for example, about 0.1 GHz) that is higher than the resonance frequency Fr of each resonator 301. In the predetermined frequency band higher than the resonance frequency Fr of each resonator 301, the resonance between the electromagnetic wave and each resonator 301 makes both the dielectric constant and permeability negative in the plasma generation region below the resonator array structure 300 in processing regions P2 and P3. Therefore, as can be seen from equation (1) above, propagation of electromagnetic waves becomes possible in the plasma generation region below the resonator array structure 300 in processing regions P2 and P3. The target frequency band is set to a predetermined frequency band (for example, about 0.1 GHz) that is higher than the resonance frequency Fr of each resonator 301. The target frequency band is preferably, for example, within 0.05 times the resonant frequency Fr of each resonator 301.

[0067] Thus, in this embodiment, the resonator array structure 300 has multiple resonators 301 arranged in a direction facing the opening of the antenna 83, so that the magnetic field penetrates the C-shaped ring member 311 of the resonator 301, enabling magnetic field resonance. Therefore, each resonator 301 of the resonator array structure 300 can resonate at the resonant frequency Fr.

[0068] Regarding the propagation of electromagnetic waves through multiple resonators, the relationship between resonant frequency, refractive index, dielectric constant, and permeability has been reported, for example, by DRSmith, DCVier, Th. Koschny, and CMSoukoulis et al. in "Electromagnetic parameter retrieval from inhomogeneous metamaterials" in "PHYSICAL REVIEW E 71, 036617 (2005)".

[0069] Refer again to Figures 1 and 2. On the outer circumference of the rotary table 2, a side ring 100, which is a cover, is positioned slightly below the rotary table 2, as shown in Figure 2. On the upper surface of the side ring 100, exhaust ports 61 and 62 are formed at, for example, two locations spaced apart from each other in the circumferential direction. In other words, two exhaust ports are formed on the floor of the vacuum chamber 1a, and exhaust ports 61 and 62 are formed on the side ring 100 at positions corresponding to these exhaust ports.

[0070] In this specification, one of the exhaust ports 61 and 62 will be referred to as the first exhaust port 61 and the second exhaust port 62, respectively. Here, the first exhaust port 61 is formed between the separation gas nozzle 42 and the plasma generator 80 located downstream of the rotating table 2 in the rotational direction relative to the separation gas nozzle 42. The second exhaust port 62 is formed between the plasma generator 80 located upstream of the rotating table 2 in the rotational direction and the separation region DA located downstream of the plasma generator 80 in the rotational direction of the rotating table 2.

[0071] The first exhaust port 61 is for exhausting the first processing gas and separation gas, and the second exhaust port 62 is for exhausting the plasma processing gas and separation gas. These first exhaust ports 61 and the second exhaust ports 62 are each connected to a vacuum exhaust mechanism, such as a vacuum pump 64, by exhaust pipes 63, which are equipped with pressure adjustment units 65 such as butterfly valves.

[0072] As mentioned above, since the housing 90 is positioned from the central region CA to the outer edge, the gas flowing from the upstream side in the rotational direction of the rotary table 2 to the plasma processing regions P2 and P3 may have its flow toward the exhaust port 62 restricted by this housing 90. For this reason, groove-shaped gas flow channels 101 (see Figures 1 and 2) are formed on the upper surface of the side ring 100 on the outer circumference side of the housing 90 for gas to flow through.

[0073] As shown in Figure 1, a protrusion 5 is provided in the center of the lower surface of the top plate 11. This protrusion 5 is formed in a roughly ring shape circumferentially, continuous with the central region CA side of the convex portion 4, and its lower surface is at the same height as the lower surface (ceiling surface 44) of the convex portion 4. Above the core portion 21 on the rotation center side of the rotary table 2, a labyrinth structure 110 is arranged to suppress the mixing of various gases in the central region CA.

[0074] As mentioned above, the housing 90 is formed towards the central region CA, so the core portion 21 that supports the central part of the rotary table 2 is formed towards the rotation center so that the upper part of the rotary table 2 avoids the housing 90. Therefore, in the central region CA, various gases are more likely to mix with each other than on the outer edge side. For this reason, by forming a labyrinth structure on the upper side of the core portion 21, the gas flow path can be increased and the mixing of gases can be prevented.

[0075] More specifically, the labyrinth structure 110 has a structure in which walls extending perpendicularly from the rotating table 2 side toward the top plate 11 side and walls extending perpendicularly from the top plate 11 side toward the rotating table 2 are formed circumferentially and are alternately arranged in the radial direction of the rotating table 2. In the labyrinth structure 110, for example, the first processing gas discharged from the raw material gas nozzle 31 and heading toward the central region CA must pass over the labyrinth structure 110. As a result, the flow velocity slows down as it approaches the central region CA, making diffusion difficult. Consequently, before the processing gas reaches the central region CA, it is pushed back toward the processing region P1 side by the separation gas supplied to the central region CA. Similarly, other gases heading toward the central region CA also have difficulty reaching the central region CA due to the labyrinth structure 110. Therefore, mixing of processing gases in the central region CA is prevented.

[0076] On the other hand, the separated gas supplied to this central region CA from the separated gas supply pipe 51 tries to diffuse vigorously in the circumferential direction, but because of the labyrinth structure 110, the flow velocity is suppressed as it passes over the labyrinth structure 110. In this case, the nitrogen gas tries to enter even the extremely narrow region between the rotating table 2 and the protrusion 92, but because the flow velocity is suppressed by the labyrinth structure 110, it flows to a relatively wide area, such as near the transport port 15. As a result, the inflow of nitrogen gas to the lower side of the housing 90 is suppressed.

[0077] As shown in Figure 1, a heater unit 7, which is a heating mechanism, is provided in the space between the rotary table 2 and the bottom surface 14 of the vacuum vessel 1a. The heater unit 7 is configured to heat the wafer W on the rotary table 2 to, for example, room temperature to about 760°C via the rotary table 2. The cover member 71a is provided on the side of the heater unit 7. The covering member 7a is a covering member that covers the upper side of the heater unit 7. In addition, on the bottom surface 14 of the vacuum vessel 1a, multiple purge gas supply pipes 73 are provided circumferentially to purge the space in which the heater unit 7 is located, below the heater unit 7.

[0078] As shown in Figure 2, a transport port 15 for transferring wafers W is formed in the side wall of the vacuum container 1a. This transport port 15 is configured to be airtightly opened and closed by a gate valve GV. A transport arm (not shown) is provided outside the vacuum container 1a, and the wafers W are transported into the vacuum container 1a using the transport arm.

[0079] The recess 24 of the rotary table 2 is where the wafer W is transferred by a transfer arm (not shown) at a position opposite the transfer opening 15. Therefore, a lifting pin and a lifting mechanism (not shown) are provided at the lower transfer position of the rotary table 2 to lift the wafer W from the back side by passing through the recess 24. The recess 24 is an example of a substrate mounting area.

[0080] As described above, the plasma processing apparatus 1 is configured to perform oxidation or nitriding treatment in a plasma generator 80 located downstream of the rotary table 2 in the direction of rotation, and to perform modification while adjusting the oxidation or nitriding treatment in a plasma generator 80 located upstream of the rotary table 2 in the direction of rotation.

[0081] [simulation] Next, we will describe the simulation of the plasma processing space in a semi-batch type plasma processing apparatus. A semi-batch type plasma processing apparatus is an example of a plasma processing apparatus that performs plasma processing by rotating a rotary table on which a substrate is placed. The plasma processing apparatus 1 described above is also an example of a semi-batch type plasma processing apparatus. In a semi-batch type plasma processing apparatus, the plasma space (processing areas P2, P3) is narrow, so the plasma density decreases around the chamber wall, and the plasma processing within the wafer (substrate) surface may become non-uniform. Therefore, simulations were performed for cases where ceramic was used for the top plate of the plasma processing space and when a resonator array structure was used.

[0082] Figure 14 shows an example of a simulation model. Figure 15 is a magnified view showing an example of the vicinity of the sheath of the simulation model. The simulation model 400 shown in Figure 14 is an axisymmetric model in which one antenna 401 is placed in the center of the top plate 402 and UHF (Ultra High Frequency) electromagnetic waves are supplied. In the simulation model 400, the electromagnetic model simulates a processing space filled with plasma. That is, plasma PL is generated by the electromagnetic waves supplied from antenna 401. The dielectric constant of plasma PL is ε r For example, ε r It is set to =-100. In the simulation, the absorbed power in region 404 of the processing space is compared.

[0083] As shown in FIG. 15, when a region 403 in the vicinity of the boundary between the top plate 402 and plasma PL is enlarged, a sheath 405 is established at the boundary between the top plate 402 and plasma PL. The sheath 405 is a vacuum, and when the top plate 402 is a dielectric such as ceramic, the sheath 405 is set to allow electromagnetic waves to propagate therethrough.

[0084] FIG. 16 is a diagram showing an example of simulation results when the relative permeability of the top plate is a positive value. The simulation result 406 shown in FIG. 16 is obtained by using ceramic (dielectric constant ε r =9.6, relative permeability μ r =1) as the top plate 402, and represents the electric field intensity in this case. In the simulation result 406, the electromagnetic wave (surface wave) supplied from the antenna 401 propagates along the surface of the top plate 402 toward the side wall portion (chamber wall). That is, in the simulation result 406, the electromagnetic wave (surface wave) supplied from the antenna 401 propagates through the sheath 405 and reaches the side wall portion (chamber wall) side. Further, in the simulation result 406, when power of 100 W is supplied from the antenna 401, the absorbed power in the region 404 is 14 W. That is, it can be seen from the simulation result 406 that the energy of the electromagnetic field escapes toward the side wall portion (chamber wall) through the sheath 405, so that sufficient power is not transmitted to the plasma PL and the power cannot be absorbed.

[0085] FIG. 17 is a diagram showing an example of simulation results when the relative permeability of the top plate is a negative value. The simulation result 407 shown in FIG. 17 uses a resonator array structure 408 (dielectric constant ε r =-30, relative permeability μ rThis represents the electric field strength when using (=-30). In simulation result 407, the propagation of electromagnetic waves (surface waves) supplied from antenna 401 to the sidewall (chamber wall) side is suppressed in the resonator array structure 408. In other words, in simulation result 407, surface wave propagation is suppressed by the resonator array structure 408. Also, in simulation result 407, when 100W of power is supplied from antenna 401, the absorbed power in region 404 is 99.9W. That is, in simulation result 407, the electromagnetic field energy can be absorbed in the central part of the processing space without escaping to the sheath 405 side, and sufficient power is transmitted to the plasma PL. In addition, in simulation result 407, the plasma does not spread to the sidewall (chamber wall) side, so the sidewall (chamber wall) is not damaged. That is, it can be seen that by using the resonator array structure, the sidewall can be brought closer to the center of the processing space. In other words, by using a resonator array structure, it is possible to suppress the decrease in plasma density around the chamber walls of processing regions P2 and P3. This makes it possible to reduce the footprint of a semi-batch type plasma processing apparatus.

[0086] Figure 18 shows an example of the relationship between power absorption efficiency and electron density in the central region. Graph 410 in Figure 18 shows the relationship between power absorption efficiency and electron density in the central region of the processing space when ceramic (e.g., alumina) is used for the top plate 402. Graph 411 shows the relationship between power absorption efficiency and electron density in the central region of the processing space when a resonator array structure 408 is used for the top plate 402. As can be seen from graphs 410 and 411, by using a resonator array structure, even if more power is input in the high-density region where the electron density exceeds the cutoff density 412, the power is consumed within the plasma, and the power absorption efficiency becomes almost 100%.

[0087] [Modified version of the first embodiment] Next, modifications 1 to 12 of the resonator array structure 300 will be described using Figures 19 to 33. Note that Figures 19 to 33 show the vicinity of the housing 90 of the plasma generator 80 in an isolated state. Furthermore, in each modification, the same reference numerals are used for components identical to those in the plasma processing apparatus 1 of the first embodiment, and the description of overlapping components and operations is omitted. Also, in each modification, the boundaries 305 of the multiple resonators 301 may be omitted.

[0088] (Variation 1) Figure 19 is a transmission view showing an example of a resonator array structure of a plasma generator according to Modification 1. Note that Figure 19 corresponds to view B in Figure 7. The resonator array structure 320 shown in Figure 19 is formed along the upper surface of the central part 93 of the dielectric housing 90b so as to be integrated with the housing 90b. Similar to the resonator array structure 300, the resonator array structure 320 is formed by arranging a plurality of resonators 301 at approximately equal intervals. In other words, when viewed from the recess 24 side of the rotary table 2 on which the wafer W is placed, the C-shaped ring members 311 shown by transmission are arranged so that the C shape is visible.

[0089] (Modification 2) Figure 20 is a plan view showing an example of a plasma generator according to Modification 2, viewed from below. Figure 21 is a transmission view showing an example of the view indicated by arrow F in Figure 20. In Figure 20, the lower surface of the housing 90c of Modification 2 is shown in a roughly fan shape, and the resonator array structure 321 is shown through the transparency.

[0090] As shown in Figures 20 and 21, the resonator array structure 321 is integrated with the projection 92 of the dielectric housing 90c and is formed to surround the central portion 93. The resonator array structure 321 has multiple resonators 301 arranged in a direction perpendicular to the lower surface of the central portion 93. In other words, in the direction of arrow F in Figure 20 shown in Figure 21, a part of the C-shaped ring member 311 shown as transmitted light is arranged so that the C shape is visible. In the modified example 2, an antenna that generates a rotating magnetic field may be used as the antenna 83. In other words, the antenna 83 may be a rod antenna or a waveguide antenna. In this case, the rotating magnetic field will be in the same direction as the circumferential direction of the wafer W in Figure 20, so it will be in the direction that penetrates the C-shaped ring member 311. The antenna 83 only needs to generate a magnetic field in the direction that penetrates the C-shaped ring member 311, and for example, the opening of the antenna 83 in the first embodiment may be rotated 90 degrees (to sideways). In other words, whether using the coil-shaped antenna 83 of the first embodiment, or a rod antenna or a waveguide antenna, it is sufficient that the magnetic field component is included in the direction that penetrates the C-shaped ring member 311.

[0091] (Variation 3) Figure 22 is a plan view showing an example of a plasma generator according to Modification 3, viewed from below. Figure 23 is a transmission view showing an example of a view G of arrow G in Figure 22. In Figure 22, the lower surface of the housing 90d of Modification 3 is shown in a roughly fan shape, and the resonator array structure 322 is shown through the view.

[0092] As shown in Figures 22 and 23, the resonator array structure 322 is integrated with the projection 92d of the dielectric housing 90d and is formed to enclose the central part 93, which is divided into two parts. The resonator array structure 322 has multiple resonators 301 arranged in a direction perpendicular to the lower surface of the central part 93. In other words, in the line of sight G of Figure 22 shown in Figure 23, a part of the C-shaped ring member 311 shown as a transparent object is arranged so that the C shape is visible. In the modified example 3, as in the modified example 2, an antenna that generates a rotating magnetic field may be used as the antenna 83. Also, in the modified example 3, the central part 93 is divided into two parts in the left-right direction (the rotation direction of the rotary table 2) in Figure 22, but it may be further divided into three or four parts. In addition, the central part 93 may be divided in the up-down direction (the radial direction of the rotary table 2) in Figure 22.

[0093] (Modification 4) Figure 24 is a plan view showing an example of a plasma generator according to Modification 4, viewed from below. Figure 25 is a transmission view showing an example of a view H as indicated by arrow H in Figure 24. In Figure 24, the lower surface of the housing 90e of Modification 4 is shown in a roughly fan shape, and the resonator array structure 323 is shown through the view.

[0094] The housing 90e and resonator array structure 323 of Modified Example 4 are a combination of the housing 90b and resonator array structure 320 of Modified Example 1 and the housing 90c and resonator array structure 321 of Modified Example 2. In other words, the resonator array structure 323 is formed to be integrated with the housing 90e along the upper surface of the central portion 93 of the housing 90e, and is also integrated with the protrusion 92 of the housing 90e, forming to surround the central portion 93. When viewed from the recess 24 side of the rotary table 2 on which the wafer W is placed, the C-shaped ring members 311 that are visible through the central portion 93 are arranged so that the C shape is visible. Also, in the direction of arrow H in Figure 24 shown in Figure 25, a part of the visible C-shaped ring members 311 are arranged so that the C shape is visible. In Modified Example 4, as in Modified Example 2, an antenna that generates a rotating magnetic field may be used as the antenna 83. Furthermore, in Modification 4, not only are electromagnetic waves propagating from the antenna 83 directly irradiated onto the resonator (meta-atom) 301 to generate a high-density plasma, but electromagnetic waves that could not be directly absorbed by the resonator 301 can also contribute to plasma generation. In other words, in Modification 4, even if the electromagnetic waves propagating from the antenna 83 reach a metal such as the vacuum container 1a and the direction of magnetic field propagation changes due to reflection or scattering of the electromagnetic waves on the metal surface, the resonator 301, with its C-shaped ring members 311 arranged in different orientations, can absorb them and contribute to plasma generation. For this reason, in Modification 4, even if the power supplied from the antenna 83 is the same as in the first embodiment and Modifications 1 to 3, a higher plasma density can be achieved.

[0095] (Variation 5) Figure 26 is a plan view showing an example of a plasma generator according to Modification 5, viewed from above. In Figure 26, the top surface of the housing 90f of Modification 5 is shown in a roughly fan shape, and the resonator array structure 324 is shown through it.

[0096] As shown in Figure 26, the resonator array structure 324 is formed along the upper surface of the central portion 93 of the dielectric housing 90f, so as to be integrated with the housing 90f. The resonator array structure 324 is formed by arranging a plurality of resonators 301 in a single row radially in the central region of the circumferential direction of the central portion 93. In other words, when viewed from the antenna 83 side or the recess 24 side of the rotary table 2 on which the wafer W is placed, the resonator array structure 324 is arranged so that the C-shaped ring member 311, which is visible when transmitted through the resonator array structure 324, is arranged so that the C shape is visible. In addition, the antenna 83 is positioned above the plurality of resonators 301 in the resonator array structure 324.

[0097] (Experimental variation 6) Figure 27 is a plan view showing an example of a plasma generator according to Modification 6, viewed from above. In Figure 27, the top surface of the housing 90g of Modification 6 is shown in a roughly fan shape, and the resonator array structure 324 is shown through it.

[0098] The housing 90g and resonator array structure 324 shown in Figure 27 are modified versions of the housing 90f and resonator array structure 324 of Modification 5, with the addition of a Faraday shield 315. The Faraday shield 315 is positioned above the central section 93, and slits 315a are opened at locations corresponding to the multiple resonators 301 of the resonator array structure 324. In other words, in the multiple resonators 301, the magnetic field penetrates the C-shaped ring member 311, but in other areas of the central section 93, the Faraday shield 315 isolates the electric field from the rotary table 2. The Faraday shield 315 is made of, for example, aluminum. By providing the Faraday shield 315, there is no electric field in the processing areas P2 and P3 other than directly below the multiple resonators 301, and therefore no voltage is applied. For this reason, plasma excitation and discharge can be suppressed in the processing areas P2 and P3 other than directly below the multiple resonators 301.

[0099] (Example 7) Figure 28 is a plan view showing an example of a plasma generator according to Modification 7, viewed from above. In Figure 28, the upper surface of the housing 90h of Modification 7 is shown in a roughly fan shape, and the resonator array structure 325 is shown through it.

[0100] As shown in Figure 28, the resonator array structure 325 is formed along the upper surface of the central portion 93 of the dielectric housing 90h, so as to be integrated with the housing 90h. The resonator array structure 325 is formed by arranging a plurality of resonators 301 in a single row in the radial direction in the regions at both ends of the circumferential direction of the central portion 93. In other words, when viewed from the antenna 83 side or the recess 24 side of the rotary table 2 on which the wafer W is placed, the resonator array structure 325 is arranged so that the C-shaped ring members 311, which are shown when transmitted, are visible. In addition, in the resonator array structure 325, for example, the coils of the antenna 83 are positioned above the plurality of resonators 301. In other words, the openings of the coils of the antenna 83 may be deformed to correspond to the arrangement of the plurality of resonators 301.

[0101] (Variation 8) Figure 29 is a plan view showing an example of a plasma generator according to Modification 8, viewed from above. In Figure 29, the top surface of the housing 90i of Modification 8 is shown in a roughly fan shape, and the resonator array structure 326 is shown through it.

[0102] As shown in Figure 29, the resonator array structure 326 is formed along the upper surface of the central portion 93 of the dielectric housing 90i, so as to be integrated with the housing 90i. The resonator array structure 326 is formed in which a plurality of resonators 301 are arranged in a line radially in the region at one end of the circumferential direction of the central portion 93, which is on the upstream side in the rotational direction of the rotary table 2. In other words, when viewed from the antenna 83 side or the recess 24 side of the rotary table 2 on which the wafer W is placed, the resonator array structure 326 is arranged so that the C-shaped ring member 311, which is shown through light, is visible. In addition, the antenna 83 is positioned above the plurality of resonators 301 in the resonator array structure 326.

[0103] (Extreme variation 9) Figure 30 is a plan view showing an example of a plasma generator according to Modification 9, viewed from above. In Figure 30, the upper surface of the housing 90j of Modification 9 is shown in a roughly fan shape, and the resonator array structure 327 is shown through it.

[0104] As shown in Figure 30, the resonator array structure 327 is formed along the upper surface of the central portion 93 of the dielectric housing 90j, so as to be integrated with the housing 90j. The resonator array structure 327 has multiple resonators 301 arranged in a staggered pattern in two rows in the radial direction in the region at one end of the circumferential direction of the central portion 93, which is on the upstream side in the rotation direction of the rotary table 2. In other words, when viewed from the antenna 83 side or the recess 24 side of the rotary table 2 on which the wafer W is placed, the resonator array structure 327 is arranged so that the C-shaped ring member 311, which is represented by light, is visible. Furthermore, in the resonator array structure 327, the antenna 83 is positioned above the staggered pattern of the multiple resonators 301 in two rows.

[0105] (Variation 10) Figure 31 is a plan view showing an example of a plasma generator according to Modification 10, viewed from above. In Figure 31, the top surface of the housing 90k of Modification 10 is shown in a roughly fan shape, and the resonator array structure 328 is shown through it.

[0106] As shown in Figure 31, the resonator array structure 328 is formed along the upper surface of the central portion 93 of the dielectric housing 90k, so as to be integrated with the housing 90k. The resonator array structure 328 is formed by arranging multiple resonators 301 in a single row in the radial direction in the regions at both ends of the circumferential direction of the central portion 93. In addition, multiple resonators 301 are arranged in a single row in the radial direction in the central region of the circumferential direction of the resonator array structure 328. The number of resonators 301 arranged in the central region of the circumferential direction of the central portion 93 is fewer than the number of resonators 301 arranged in a single row in the regions at both ends of the circumferential direction of the central portion 93. In other words, when viewed from the antenna 83 side or the recess 24 side of the rotary table 2 on which the wafer W is placed, the C-shaped ring member 311 that is shown through the resonator array structure 328 is arranged so that the C shape is visible. Furthermore, in the resonator array structure 328, the coils of, for example, the antenna 83 are positioned above each of the multiple resonators 301. In other words, the openings of the antenna 83 coils may be deformed to correspond to the array of multiple resonators 301.

[0107] As shown in the modified examples 7 to 10, the in-plane distribution on the wafer W when the rotary table 2 rotates can be controlled by changing the arrangement and number of the multiple resonators 301 located in the central part 93.

[0108] (Variation 11) Figure 32 is a plan view showing an example of a plasma generator according to Modification 11, viewed from above. In Figure 32, the upper surface of the housing 90l of Modification 11 is shown in a roughly fan shape, and a rectangular resonator array structure 329 is provided above the central part 93. The resonator array structure 329 has multiple resonators 301 arranged in a row in the radial direction, and the central end is connected to the rotation shaft 316. In Figure 32, the multiple resonators 301 of the resonator array structure 329 are shown as if they were transparent.

[0109] As shown in states 317-319 of Figure 32, the resonator array structure 329 is movable along the upper surface of the central portion 93 of the dielectric housing 90l, with the rotation axis 316 as its axis. In modified example 11, the uniformity of the plasma in processing regions P2 and P3 can be adjusted by changing the position of the resonator array structure 329 on the upper surface of the central portion 93.

[0110] (Example 12) Figure 33 is a plan view showing an example of a plasma generator according to Modification 12, viewed from above. In Figure 33, the upper surface of the housing 90m of Modification 12 is shown in a roughly fan shape, and a rectangular resonator array structure 330 is provided above the central part 93. The resonator array structure 330 is rectangular in shape with multiple resonators 301 arranged in a row, and one end of the resonator array structure 330 is connected to the rotation shaft 420 on the outer periphery side of the region at one end of the central part 93 in the circumferential direction. In addition, in Figure 33, the multiple resonators 301 of the resonator array structure 330 are shown as transparent.

[0111] As shown in states 421-423 of Figure 33, the resonator array structure 330 is movable along the upper surface of the central portion 93 of the dielectric housing 90m, with the rotation axis 420 as its axis. In modified example 12, the uniformity of the plasma in the processing regions P2 and P3 can be adjusted by changing the position of the resonator array structure 330 on the upper surface of the central portion 93.

[0112] (Second Embodiment) In the first embodiment described above, the multiple resonators 301 are arranged in a direction along at least one of the lower surface of the central portion 93 and the side surface of the projection portion 92. However, they may also be arranged on the side surface of the cell that is open to the processing areas P2 and P3. This embodiment will be described as the second embodiment. In the second embodiment, the description is given with the vicinity of the housing 90n of the plasma generator 80a extracted. In the second embodiment, the same reference numerals are used for components identical to those in the plasma processing apparatus 1 of the first embodiment, and the description of the redundant components and operations is omitted.

[0113] Figure 34 is a plan view showing an example of a plasma generator according to the second embodiment, viewed from above. Figure 35 is a cross-sectional view showing an example of section II of Figure 34. The plasma generator 80a shown in Figure 34 has an antenna 83a, a housing 90n, and a resonator array structure 331 instead of the antenna 83, housing 90, and resonator array structure 300 of the plasma generator 80 of the first embodiment. Note that in Figure 34, the upper surface of the housing 90n of the plasma generator 80a is shown in a roughly fan shape, and the resonator array structure 331 is shown as a transparent portion.

[0114] Antenna 83a is an example of a rod antenna, and is electrically connected, for example, to the inner conductor of a coaxial tube connected to the RF power supply 85. Note that the rod antenna is an example of a monopole antenna. Antenna 83a may also be a waveguide antenna. In other words, antenna 83a, the rod antenna, and the waveguide antenna are examples of electromagnetic wave supply units. When source RF power is supplied to antenna 83a, a rotating magnetic field 424 is generated with antenna 83a as its axis.

[0115] The resonator array structure 331 is integrated with the central portion 93 of the housing 90n, and the openings of the multiple cells 331a face the processing areas P2 and P3. That is, the internal space of the multiple cells 331a is connected to the space of the processing areas P2 and P3. The cells 331a are, for example, rectangular prisms, and resonators 301 are arranged inside the central portion 93 on the four faces perpendicular to the lower surface of the central portion 93, via the dielectric material that constitutes the central portion 93. A single resonator 301 is, similar to the first embodiment, a structure in which a dielectric material 312 (not shown) is arranged between two C-shaped ring members 311 made of conductors, with the ring members 311 arranged adjacent to each other in opposite directions. Alternatively, for a single resonator 301, for example, grooves into which two C-shaped ring members 311 can be inserted may be provided adjacent to each other on the upper surface of the central portion 93 on the antenna 83a side, and a part of the central portion 93 may be used instead of the dielectric material 312.

[0116] As shown in Figure 34, the resonator array structure 331 is formed by arranging a plurality of cells 331a in a row radially in the central region of the circumferential direction of the central part 93. The rotating magnetic field 424 generated by the antenna 83a includes a magnetic field component that penetrates the C-shaped ring member 311 of the plurality of resonators 301 of the plurality of cells 331a, as shown in Figures 34 and 35. That is, plasma is generated inside the plurality of cells 331a, and plasma processing is performed on the wafer W in the processing regions P2 and P3 below the opening of each of the plurality of cells 331a by the generated plasma.

[0117] [Modified version of the second embodiment] Next, modifications 13 to 19 of the resonator array structure 331 will be described using Figures 36 to 43. Note that Figures 36 to 43 show the plasma generator 80a near its housing 90n. In each modification, components identical to those in the plasma processing apparatus 1 of the first and second embodiments are denoted by the same reference numerals, and the description of overlapping components and operations is omitted. Also, in each modification, the boundaries 305 of the multiple resonators 301 may be omitted.

[0118] (Example 13) Figure 36 is a plan view showing an example of a plasma generator according to Modification 13, viewed from above. Figure 37 is a cross-sectional view showing an example of a JJ cross section of Figure 36. In Figure 36, the upper surface of the housing 90o of Modification 13 is shown in a roughly fan shape, and the resonator array structure 331 is shown through it.

[0119] The housing 90o and resonator array structure 331 shown in Figures 36 and 37 are the same as the housing 90n and resonator array structure 331 of the second embodiment, but with the addition of a Faraday shield 425. The Faraday shield 425 is positioned above the central portion 93, and slits 425a are opened at locations corresponding to the multiple cells 331a of the resonator array structure 331. In other words, in each of the multiple resonators 301 in the multiple cells 331a, the rotating magnetic field 424 penetrates the C-shaped ring member 311, but in other areas of the central portion 93, the Faraday shield 425 isolates the electric field from the rotary table 2. The Faraday shield 425 is made of, for example, aluminum. By providing the Faraday shield 425, there is no electric field in the processing areas P2 and P3 other than directly below the multiple cells 331a, so no voltage is applied. Therefore, plasma excitation and discharge can be suppressed in the processing areas P2 and P3 other than directly below the multiple cells 331a.

[0120] (Variation 14) Figure 38 is a plan view showing an example of a plasma generator according to Modification 14, viewed from above. In Figure 38, the upper surface of the housing 90p of Modification 14 is shown in a roughly fan shape, and the resonator array structure 332 is shown through it.

[0121] As shown in Figure 38, the resonator array structure 332 is integrated with the central portion 93 of the housing 90p, and the openings of the multiple cells 331a face the processing areas P2 and P3. That is, the internal space of the multiple cells 331a is connected to the space of the processing areas P2 and P3. The resonator array structure 332 is formed by arranging multiple cells 331a in a row radially in the regions at both ends of the circumferential direction of the central portion 93. In other words, the resonator array structure 332 is arranged so that the openings of the multiple cells 331a are visible when viewed from the recess 24 side of the rotary table 2 on which the wafer W is placed. Furthermore, in the resonator array structure 332, the antenna 83a is positioned above the center of the central portion 93, for example, so that the rotating magnetic field 424 (see Figure 34) penetrates the multiple resonators 301 of the multiple cells 331a. Alternatively, the antenna 83a may be positioned above the center of the row of multiple cells 331a.

[0122] (Variation 15) Figure 39 is a plan view showing an example of a plasma generator according to Modification 15, viewed from above. In Figure 39, the upper surface of the housing 90q of Modification 15 is shown in a roughly fan shape, and the resonator array structure 333 is shown through it.

[0123] As shown in Figure 39, the resonator array structure 333 is integrated with the central portion 93 of the housing 90q, and the openings of the multiple cells 331a face the processing areas P2 and P3. That is, the internal space of the multiple cells 331a is connected to the space of the processing areas P2 and P3. The resonator array structure 333 is formed in a staggered arrangement of multiple cells 331a in two rows in the radial direction in the region at one end of the circumferential direction of the central portion 93, which is on the upstream side in the rotation direction of the rotary table 2. In other words, the resonator array structure 333 is arranged so that the openings of the multiple cells 331a are visible when viewed from the recess 24 side of the rotary table 2 on which the wafer W is placed. Furthermore, in the resonator array structure 333, the antenna 83a is positioned above the center of the central portion 93, for example, so that the rotating magnetic field 424 (see Figure 34) penetrates the multiple resonators 301 of the multiple cells 331a. The antenna 83a may be positioned above the center of the two staggered arrangements of the multiple cells 331a.

[0124] (Variation 16) Figure 40 is a plan view showing an example of a plasma generator according to Modification 16, viewed from above. In Figure 40, the upper surface of the housing 90r of Modification 16 is shown in a roughly fan shape, and the resonator array structure 334 is shown through it.

[0125] As shown in Figure 40, the resonator array structure 334 is integrated with the central part 93 of the housing 90r, and the openings of the multiple cells 331a face the processing areas P2 and P3. That is, the internal space of the multiple cells 331a is connected to the space of the processing areas P2 and P3. The resonator array structure 334 is formed by arranging multiple cells 331a in a single row in the radial direction in the regions at both ends of the circumferential direction of the central part 93, which is the upstream side in the rotation direction of the rotary table 2. In addition, multiple cells 331a are arranged in the central region of the circumferential direction of the central part 93, while maintaining a distance from the multiple cells 331a arranged in the regions at both ends. In other words, the resonator array structure 334 is arranged such that, for example, two cells 331a are arranged near the central region in the circumferential direction of the central part 93 and in the circumferential direction on the outer edge, and for example, one cell 331a is arranged near the central region in the circumferential direction of the central part 93. That is, the resonator array structure 334 is arranged so that when viewed from the recess 24 side of the rotating table 2 on which the wafer W is placed, the openings of multiple cells 331a are visible. In addition, in the resonator array structure 334, the antenna 83a is positioned above the center of the central part 93, for example, so that the rotating magnetic field 424 (see Figure 34) penetrates the multiple resonators 301 of the multiple cells 331a.

[0126] (Example 17) Figure 41 is a plan view showing an example of a plasma generator according to Modification 17, viewed from above. In Figure 41, the upper surface of the housing 90s of Modification 17 is shown in a roughly fan shape, and the resonator array structure 335 is shown through it.

[0127] As shown in Figure 41, the resonator array structure 335 is integrated with the central part 93 of the housing 90s, and the openings of the multiple cells 331a face the processing areas P2 and P3. That is, the internal space of the multiple cells 331a is connected to the space of the processing areas P2 and P3. The resonator array structure 335 is formed by arranging multiple cells 331a in a single row radially in the region at one end of the circumferential direction of the central part 93, which is on the upstream side in the rotation direction of the rotary table 2. In other words, the resonator array structure 335 is arranged so that the openings of the multiple cells 331a are visible when viewed from the recess 24 side of the rotary table 2 on which the wafer W is placed. Furthermore, in the resonator array structure 335, the antenna 83a is positioned above the center of the central part 93, for example, so that the rotating magnetic field 424 (see Figure 34) penetrates the multiple resonators 301 of the multiple cells 331a. The antenna 83a may be positioned above the center of the array of cells 331a.

[0128] (Example 18) Figure 42 is a plan view showing an example of a plasma generator according to Modification 18, viewed from above. In Figure 42, the top surface of the housing 90t of Modification 18 is shown in a roughly fan shape, and the resonator array structure 336 is shown through it.

[0129] As shown in Figure 42, the resonator array structure 336 is integrated with the central part 93 of the housing 90t, and the openings of the cells 336a face the processing areas P2 and P3. That is, the space inside the cells 336a is connected to the spaces of the processing areas P2 and P3. The cells 336a are radially elongated rectangular prisms located in the central region of the central part 93, and multiple resonators 301 are arranged on the longer sides of the central part 93 via the dielectric material that makes up the central part 93. Also, on the shorter sides of the cells 336a, multiple resonators 301 are arranged on the central part 93 via the dielectric material that makes up the central part 93. In other words, the cells 336a can be said to be a state in which the spaces of multiple cells 331a are connected. Furthermore, the resonator array structure 336 is positioned so that the openings of the cells 336a are visible when viewed from the recess 24 side of the rotary table 2 on which the wafer W is placed. Furthermore, in the resonator array structure 336, the rotating magnetic field 424 (see Figure 34) is positioned such that the antenna 83a is located above the center of the central section 93, for example, so that the rotating magnetic field 424 (see Figure 34) penetrates through the multiple resonators 301 of the cell 336a.

[0130] (Variation 19) Figure 43 is a plan view showing an example of a plasma generator according to Modification 19, viewed from above. In Figure 43, the upper surface of the housing 90u of Modification 19 is shown in a roughly fan shape, and the resonator array structure 337 is shown through it.

[0131] As shown in Figure 43, the resonator array structure 337 is integrated with the central portion 93 of the housing 90u, and the opening of the cell 337a faces the processing areas P2 and P3. That is, the space inside the cell 337a is connected to the spaces of the processing areas P2 and P3. The cell 337a is a fan-shaped recess in the central region of the central portion 93, extending in the same direction as the roughly fan shape of the housing 90u. Multiple resonators 301 are arranged inside the central portion 93 via the dielectric material that constitutes the central portion 93 on the two side faces radiating from the center of the rotary table 2 and on the outer side face of the cell 337a. In other words, the cell 337a is a configuration in which multiple resonators 301 are arranged inside the wall of the fan-shaped recess. Furthermore, the resonator array structure 337 is positioned so that the opening of the cell 337a is visible when viewed from the recess 24 side of the rotary table 2 on which the wafer W is placed. Furthermore, in the resonator array structure 337, the rotating magnetic field 424 (see Figure 34) penetrates the multiple resonators 301 of the cell 337a, for example, the antenna 83a is positioned above the center of the central part 93. In other words, in the resonator array structure 337, the antenna 83a is positioned above the center of the cell 337a.

[0132] (Third embodiment) In the third embodiment, the case in which the source RF signal supplied by the RF power supply 85 of the first embodiment is a plurality of source RF signals having different frequencies (for example, a multi-tone signal) will be described. In the third embodiment, the arrangement of the plurality of resonators 301 in the resonator array structure is the same as the arrangement of the resonator array structure 324 in the modified example 5. In the third embodiment, the RF power supply and the corresponding resonator array structure in this case will be described. In the third embodiment, the same reference numerals are used for components identical to those in the plasma processing apparatus 1 of the first embodiment, and the description of the redundant components and operations will be omitted.

[0133] In the third embodiment, instead of the RF power supply 85 of the first embodiment, there is an RF power supply 530 and a higher-level controller 580. The RF power supply 530 generates high-frequency (microwave) (source RF signal) for plasma generation using waveform data that includes a set frequency component having a predetermined frequency range. For example, the RF power supply 530 generates microwaves centered at 2.45 GHz using waveform data that includes a set frequency component having a signal component at a set value of 2.45 GHz and signal components at any number of frequencies within a range of ±25% of the set value. The RF power supply 530 receives signals from the higher-level controller 580 indicating the power setting Pset for high-frequency power and waveform settings (waveform data) which are information such as the set frequency. The microwaves output from the RF power supply 530 are supplied to the antenna 83a via a waveguide 521, a waveguide-coaxial converter (not shown), and a coaxial waveguide, etc.

[0134] Antenna 83a may be, for example, a waveguide antenna, a slot antenna, a rod antenna, or, similar to antenna 83, a spiral antenna, a solenoid antenna, etc. In other words, it is sufficient that it includes a magnetic field component in the direction that penetrates the C-shaped ring members 311 of the multiple resonators 301. RF power supply 530 is an example of an electromagnetic wave generator and an example of a high-frequency power supply. Antenna 83a is an example of an electromagnetic wave supply unit.

[0135] The higher-level controller 580 controls the RF power supply 530 according to instructions from the control unit 120. The higher-level controller 580 outputs microwave power setting Pset and waveform settings to the RF power supply 530 according to the recipe input from the control unit 120. The waveform settings are waveform data for setting, for example, the microwave center frequency and waveform shape. The higher-level controller 580 also receives monitor values ​​Pf mon and Pr mon from the RF power supply 530. The higher-level controller 580 outputs the input monitor values ​​Pf mon and Pr mon to the control unit 120. The higher-level controller 580 may be included within the control unit 120.

[0136] Figure 44 is a block diagram showing an example of the functional configuration of an RF power supply according to the third embodiment. The RF power supply 530 shown in Figure 4 includes a modulation unit 541, demodulation units 532 and 533, a preamplifier 534, an amplifier 535, a directional coupler 536, a calculation unit 537, a storage unit 538, and an input / output unit 539.

[0137] The modulation unit 541 generates a modulated microwave (high-frequency signal) based on the waveform data input from the calculation unit 537. That is, the modulation unit 541 generates a broadband waveform (multitone) microwave. The modulation unit 541 will now be described using Figure 45. Figure 45 is a block diagram showing an example of the functional configuration of the modulation unit according to the third embodiment. As shown in Figure 45, the modulation unit 541 includes an inverse Fourier transform unit 542, D / A (Digital / Analog) converters 543a, 543b, LPF (Low Pass Filter) 544a, 544b, PLL (Phase Locked Loop) oscillator 545, phase shifter 546, multiplier 547, amplifier 548, and BPF (Band Pass Filter) 549.

[0138] The inverse Fourier transform unit 542 separates the in-phase component data (I data) and out-of-phase component data (Q data) of the waveform data by performing an inverse Fourier transform on the waveform data input from the calculation unit 537. The I data and Q data of the waveform data separated by the inverse Fourier transform unit 542 are D / A converted by D / A converters 543a and 543b, and then input to the multiplier 547 after passing through LPFs 544a and 544b.

[0139] The PLL oscillator 545 generates a reference carrier wave and outputs the generated reference carrier wave to the phase shifter 546 and the multiplier 547. The phase shifter 546 shifts the phase of the reference carrier wave input from the PLL oscillator 545 by 90° and outputs the phase-shifted reference carrier wave to the multiplier 547. The multiplier 547 multiplies the I data input from the LPF 544a with the reference carrier wave input from the PLL oscillator 545. The multiplier 547 multiplies the Q data input from the LPF 544b with the reference carrier wave input from the phase shifter 546. The results of each multiplication by the multiplier 547 are combined in an adder (not shown) to generate microwaves for plasma generation. The generated microwaves are amplified by the amplifier 548 and output to the preamplifier 534 via the BPF 549.

[0140] Returning to the explanation of Figure 44, the demodulation units 532 and 533 demodulate the forward wave power Pf and reflected wave power Pr, respectively, input from the directional coupler 536, and output the waveform data of the demodulated forward wave power Pf and reflected wave power Pr to the calculation unit 537.

[0141] The preamplifier 534 is an amplifier that can change its amplification factor according to the power command value Mf input from the calculation unit 537. The preamplifier 534 amplifies the microwave input from the modulation unit 541 with an amplification factor corresponding to the power command value Mf and outputs it to the amplifier 535.

[0142] Amplifier 535 is an amplifier that amplifies the microwave input from preamplifier 534 to a predetermined power. Amplifier 535 outputs the amplified microwave to antenna 83a as a microwave for plasma generation via directional coupler 536 and coaxial waveguide (not shown). Although it is desirable from the viewpoint of power loss for the output from the coaxial waveguide (not shown) of RF power supply 530 to be supplied directly to antenna 83a, due to the space constraints between the RF power supply 530 and matching unit (not shown), the microwave may be supplied to antenna 83a via a relay cable such as a coaxial cable.

[0143] The directional coupler 536 is installed in the transmission path between the amplifier 535 and the antenna 83a, and extracts the forward wave power Pf and the reflected wave power Pr. The extracted forward wave power Rx(Pf) is input to the demodulation unit 532. The extracted reflected wave power Rx(Pr) is input to the demodulation unit 533. In the following description, the forward wave power Rx(Pf) may be simply referred to as "forward wave power Pf," and the reflected wave power Rx(Pr) may be simply referred to as "reflected wave power Pr."

[0144] The calculation unit 537 is a controller that controls the RF power supply 530. The calculation unit 537 receives the microwave power setting Pset and waveform settings (waveform data), which are information such as the set frequency, from the higher-level controller 580 via the input / output unit 539. The calculation unit 537 performs the calculation of the forward wave power Pf, the calculation of the reflected wave power Pr, and the setting of the power command value Mf. The calculation unit 537 outputs the waveform data based on the waveform settings to the modulation unit 541 and outputs the power command value Mf to the preamplifier 534. The power command value Mf is controlled by so-called load control (constant power control). The calculation unit 537 also outputs the monitor value Pf mon for the forward wave power Pf and the monitor value Pr mon for the reflected wave power Pr to the higher-level controller 580.

[0145] The memory unit 538 stores information used in each process in the arithmetic unit 537. The memory unit 538 stores various types of information, such as the Pf component and Pf phase component of the traveling wave power Pf, and the Pr component and Pr phase component of the reflected wave power Pr.

[0146] Next, the settings for the resonant frequency Fr of the resonator 301 and the output of the RF power supply 530 will be explained using Figures 46 and 47. Figure 46 is a diagram showing an example of the settings for the resonant frequency of the resonator and the output of the RF power supply according to the third embodiment. Figure 47 is a schematic cross-sectional view showing an example of plasma generation according to the third embodiment. As shown in Figure 46, consider the case where multiple resonators 301 have different resonant frequencies Fr(1) to Fr(10), represented by graphs 561 to 570, in the range of 2.0 GHz to 2.5 GHz.

[0147] Here, assume that the RF power supply 530 receives waveform settings from the higher-level controller 580, where the power settings Pset=P1,P3,P5,P7 for output frequencies Fo(1), Fo(3), Fo(5), and Fo(7). In this case, the RF power supply 530 outputs multi-tone microwaves as shown in graphs 561p, 563p, 565p, and 567p in Figure 46. At this time, for example, as shown in Figure 47, assume that the resonant frequencies Fr of the multiple resonators 301 of the resonator array structure 338 are set to resonant frequencies Fr(1), Fr(3), Fr(5), and Fr(7), respectively. In this case, plasmas PL1, PL3, PL5, and PL7 are generated in the processing regions P2 and P3 directly below each of the multiple resonators 301. In other words, in the plasma generator 80 having the resonator array structure 338 according to the third embodiment, it is possible to control the distribution and density of the plasma so that, for example, a plasma density gradient is created from the center to the outer circumference of the rotary table 2. Thus, in the third embodiment, the power of the microwaves supplied to any resonator 301 can be set by setting the power according to the resonant frequency Fr of the resonator 301. In other words, in the third embodiment, plasma can be selectively generated in multiple resonators 301, and the distribution and density of the plasma can be controlled.

[0148] (Fourth Embodiment) In the first embodiment described above, the single resonator 301 is a distributed-parameter circuit having a structure in which a dielectric 312 is placed between two C-shaped ring members 311 that are adjacent to each other and facing opposite directions. However, it may also be a lumped-parameter circuit. This embodiment will be described as the fourth embodiment. In the fourth embodiment, the single resonator 601 corresponding to the single resonator 301 is described separately. Also, in the fourth embodiment, the other configurations are the same as those of the plasma processing apparatus 1 in the first embodiment, so the description of the overlapping configurations and operations will be omitted.

[0149] In the fourth embodiment, instead of the multiple resonators 301 of the first embodiment, there are multiple resonators 601. Each of the multiple resonators 601 constitutes a series resonant circuit consisting of a coil 611 and a capacitor 612. In other words, each of the multiple resonators 601 constitutes a lumped-element circuit. Furthermore, the lumped-element circuit may also include a resistive component. That is, the lumped-element circuit is a series resonant circuit that includes at least a coil 611 and a capacitor 612. The series resonant circuit can be realized, for example, by patterning and stacking conductors on a plane. The magnetic field generated by the antenna 83 is in the direction that penetrates the coil 611.

[0150] Figure 48 is a plan view showing an example of the upper surface of a single resonator according to the fourth embodiment. Figure 49 is a cross-sectional view showing an example of the KK cross section of Figure 48. Figure 50 is a plan view showing an example of the lower surface of a single resonator according to the fourth embodiment. In Figure 48, a plan view 650 of the upper surface side of a single resonator 601 is shown as an example, among a plurality of resonators 601 formed as a single unit. In Figure 49, a cross-sectional view 651 of the KK cross section of the plan view 650 is shown. In Figure 50, a plan view 652 of the lower surface side of a single resonator 601 is shown. As shown in plan views 650, 652 and cross-sectional view 651, a single resonator 601 is located within the region enclosed by the boundary 605. In other words, in the fourth embodiment, the resonator 601 is a series resonant circuit consisting of a coil 611 and a capacitor 612, surrounded by a dielectric 615.

[0151] In the resonator 601, electrodes 616 and 617 of the capacitor 612 sandwich a plate-shaped region inside the dielectric 615, which is dielectric 615a. A coil 611 is formed on the upper surface (first surface) of the dielectric 615a where electrodes 616 are formed. The coil 611 is, for example, a single-turn coil, with one end connected to electrode 616 via a lead portion 613. The other end of the coil 611 penetrates the dielectric 615a through a through-hole 614 and appears on the lower surface (second surface) of the dielectric 615a where electrode 617 is formed, and is connected to electrode 617 via a lead portion 613. Note that the lead portions 613 are not directly connected to each other. In other words, from the perspective of lamination, the resonator 601 consists of one coil 611 stacked on top of each other, and the capacitor 612 consists of two layers of electrodes (metal) and one layer of dielectric stacked on top of each other. As a result, the resonator 601 can constitute a series resonant circuit.

[0152] Furthermore, plasma is more likely to be generated in the resonator 601 on the side where the dielectric 615 is thinner in the thickness direction at the location of the coil 611. For this reason, it is preferable that the resonator 601 is formed such that the upper side of the dielectric 615a, that is, the side where the dielectric 615 is thinner in the thickness direction at the location of the coil 611, faces the processing regions P2 and P3.

[0153] In other words, in the resonator 601, electrodes 616 and 617 of the capacitor 612 are provided on the first and second surfaces of the first dielectric (dielectric 615a), and a coil 611 is provided on at least the first surface of the first dielectric. The resonator 601 also has an insulating coating formed on its surface. In this case, the dielectric 615 surrounding the coil 611 and capacitor 612 corresponds to the insulating coating formed on its surface. Note that the resonator 601 does not necessarily have an insulating coating formed on its surface. Also, in the resonator 601 shown in Figures 48 to 50, the number of turns and the number of layers in the cross-sectional direction of the coil 611 are 1, but the number of turns and the number of layers in the cross-sectional direction of the coil 611 may be greater than 2. Similarly, in the resonator 601, the number of layers in the cross-sectional direction of electrodes 616 and 617 of the capacitor 612 is 2, but the number of layers in the cross-sectional direction of electrodes 616 and 617 may be greater than 3. Furthermore, the coil 611 includes a through-hole 614 that penetrates the first dielectric at at least one of its ends and / or middle portion.

[0154] The resonator 601, which constitutes the lumped-parameter circuit, is easier to construct at a lower resonant frequency Fr than the resonator 301, which constitutes the distributed-parameter circuit of the first embodiment. For example, the resonant frequency Fr of the resonator 601 can be a frequency of 300 MHz or less.

[0155] (Fifth embodiment) In the first embodiment described above, a plasma processing apparatus 1 having a rotary table 2 on which multiple wafers (substrates) W can be placed was described. However, a plasma generator 80 may also be applied to a plasma processing apparatus having a rotary stage on which a single wafer (substrate) W can be placed. This embodiment will be described as the fifth embodiment. In the fifth embodiment, the same reference numerals are used for components identical to those in the plasma processing apparatus 1 of the first embodiment, and the description of the redundant components and operations will be omitted.

[0156] Figure 51 is a schematic longitudinal cross-sectional view showing an example of a plasma processing apparatus according to the fifth embodiment. Figure 52 is a schematic plan view showing an example of a plasma processing apparatus according to the fifth embodiment. The plasma processing apparatus 700 shown in Figures 51 and 52 has a processing vessel 701. The processing vessel 701 is cylindrical and is made of a metal such as aluminum or nickel, for example, with an anodic oxide film formed on its surface. The processing vessel 701 is electrically at ground potential. The processing vessel 701 is airtight and can maintain a vacuum atmosphere inside. A stage 702 is provided inside the processing vessel 701. The processing vessel 701 has an opening 701c formed in the bottom portion 701b, which is the lower bottom surface. The opening 701c is formed below the stage 702.

[0157] The stage 702 is formed in a flat cylindrical shape. A substrate W (wafer W) to be subjected to plasma processing, such as a semiconductor wafer, is placed on the upper surface of the stage 702. The stage 702 supports the placed substrate W in a substantially horizontal position. The stage 702 is made of a metal such as aluminum or nickel, or aluminum nitride (AlN) with embedded metal mesh electrodes, and also functions as a lower electrode. The stage 702 is supported from below by a support member 704. The support member 704 is formed in a cylindrical shape, extends vertically downward, and reaches the opening 701c of the bottom 701b of the processing container 701. The opening 701c of the bottom 701b is formed with a diameter larger than the diameter of the support member 704. A gap is provided between the circumferential surface of the support member 704 and the circumferential surface of the opening 701c. A rotation mechanism 706 is provided at the lower end of the support member 704.

[0158] The rotating mechanism 706 is positioned to cover the opening 701c from the outside of the processing container 701, sealing the opening 701c from the outside. The rotating mechanism 706 supports the support member 704. The rotating mechanism 706 is also rotatable and rotates the support member 704. The stage 702 rotates in accordance with the rotation of the support member 704.

[0159] The rotating mechanism 706 includes a magnetic fluid seal 720 and a direct drive motor (hereinafter also referred to as a DD motor) 730. The magnetic fluid seal 720 has a rotating shaft and a casing. The rotating shaft of the magnetic fluid seal 720 is connected to a support member 704. The DD motor 730 has a rotating rotor and a motor base. The rotating rotor of the DD motor 730 is connected to the rotating shaft of the magnetic fluid seal 720, and rotates the support member 704 via this rotating shaft.

[0160] The stage 702 has a built-in heater 705, which can heat the substrate W placed on the stage 702 to a predetermined temperature. The stage 702 may have a flow path (not shown) for circulating a refrigerant, and a refrigerant whose temperature is controlled by a chiller unit located outside the processing container 701 may be circulated and supplied through the flow path. The stage 702 may control the substrate W to a predetermined temperature by heating with the heater 705 and cooling with the refrigerant supplied from the chiller unit. Alternatively, the stage 702 may be temperature-controlled using only the refrigerant and / or heat transfer medium supplied from the chiller unit, without the heater 705.

[0161] The stage 702 may have electrodes embedded in it. The electrostatic force generated by the DC voltage supplied to these electrodes allows the stage 702 to attract the substrate W placed on its upper surface. The stage 702 is also provided with lifting pins (not shown) for transferring the substrate W to and from a transport mechanism (not shown) located outside the processing container 701.

[0162] Above the stage 702, a top plate 711 is supported by a support member 712, closing the opening at the upper end of the processing container 701 from above. A separation gas supply pipe 51 is connected to the center of the top plate 711. A plasma generator 80 is positioned on the top plate 711 so as to surround a band-shaped region extending radially from the center of the stage 702 in a plan view. Also, near the top plate 711, similar to the plasma processing apparatus 1 of the first embodiment, for example, five nozzles 31, 32, 33, 41, and 42 are arranged radially at intervals from each other in the circumferential direction of the processing container 701. Each of these nozzles 31, 32, 33, 41, and 42 is positioned between the stage 702 and the top plate 711. Furthermore, each of these nozzles 31, 32, 33, 41, and 42 is mounted so as to extend horizontally from the outer peripheral wall of the processing container 701 toward the central region, facing the substrate W. Furthermore, the type of gas used in each of these nozzles 31, 32, 33, 41, and 42 may be changed according to the plasma processing, or the nozzles themselves may be omitted. In other words, in the plasma processing apparatus 700, plasma processing on a radially fan-shaped region of a single substrate W can be repeated by rotating the stage 702.

[0163] An exhaust port 771 is formed at the bottom of the processing container 701. An exhaust device 773 is connected to the exhaust port 771 via an exhaust pipe 772. The exhaust device 773 has a vacuum pump and a pressure regulating valve, and by operating the vacuum pump and pressure regulating valve, the pressure inside the processing container 701 can be reduced to a predetermined vacuum level.

[0164] The side wall of the processing container 701 is provided with an inlet / outlet 701a for loading and unloading the substrate W. The inlet / outlet 701a is provided with a gate valve 703 for opening and closing the inlet / outlet 701a.

[0165] Thus, even in a plasma processing apparatus 700 in which a single substrate W rotates, the plasma generator 80 can be applied.

[0166] As described above, according to each embodiment, the plasma processing apparatus (plasma processing apparatus 1,700) includes a processing vessel (vacuum vessel 1a, processing vessel 701), a rotary table (rotary table 2, stage 702), a dielectric (central part 93), an electromagnetic wave generator (RF power supply 85, 530), an electromagnetic wave supply unit (antenna 83, 83a), and resonator array structures 300, 320~338. The processing vessel provides a processing space (processing chamber of vacuum vessel 1a). The rotary table has a substrate mounting area (recess 24) formed on one side for horizontally mounting a substrate W, and is configured to allow rotation of the substrate mounting area within the processing vessel. The dielectric is provided with its first surface facing a first space (processing area P2, P3) which is part of the processing space. The electromagnetic wave generator is configured to generate electromagnetic waves for plasma excitation that are supplied to the first space. The electromagnetic wave supply unit is positioned above the dielectric and is configured to supply electromagnetic waves to the first space via the dielectric. The resonator array structure includes multiple resonators 301, 601 that are capable of resonating with the magnetic field component of the electromagnetic wave and whose size is smaller than the wavelength of the electromagnetic wave, and is arranged along the first surface of the dielectric. The electromagnetic wave supply unit supplies electromagnetic waves to the first space that include a magnetic field component perpendicular to the plane in which the multiple resonators are arranged. As a result, the plasma processing apparatus 1,700 can perform uniform plasma processing in the radial direction of the rotary table 2 and stage 702 while achieving high plasma density.

[0167] Furthermore, according to modifications 10, 16, and 19, the multiple resonators 301 are arranged such that their arrangement density differs between the central and outer edges of the rotating table. As a result, the plasma processing apparatus 1 can change the plasma density distribution between the central and outer edges of the rotating table.

[0168] Furthermore, according to modifications 10, 16, and 19, the multiple resonators 301 are arranged such that the arrangement density is higher on the outer periphery. As a result, the plasma processing apparatus 1 can improve the uniformity of plasma processing in the inner periphery region, where the amount of plasma processing tends to be large, and in the outer periphery region, where the amount of plasma processing tends to be insufficient.

[0169] Furthermore, according to the third embodiment, the resonance frequencies Fr of the multiple resonators 301 differ between the resonators 301 on the central side of the rotary table 2 and the resonators 301 on the outer periphery side. As a result, the plasma processing apparatus 1 can control the distribution and density of the plasma so that a gradient of plasma density is created from the central side to the outer periphery of the rotary table 2. In other words, the plasma processing apparatus 1 can selectively generate plasma in the multiple resonators 301 and control the distribution and density of the plasma.

[0170] Furthermore, according to each embodiment, the dielectric is a sector enclosed by two sides radiating from the center of the rotary table. As a result, the plasma processing apparatus 1,700 can perform plasma processing on the substrate W in accordance with the rotation of the rotary table.

[0171] Furthermore, according to each embodiment, the resonator array structures 300, 320, 323-330 have multiple resonators 301 arranged in a direction along the first surface of the dielectric. As a result, the plasma processing apparatus 1,700 can perform uniform plasma processing in the radial direction of the rotary table 2 and stage 702 while achieving high plasma density by a magnetic field that penetrates the first surface of the dielectric.

[0172] Furthermore, according to modifications 11 and 12, the resonator array structures 329 and 330 are rectangular in shape and are movable around one end of the rectangular shape as an axis. As a result, the plasma processing apparatus 1 can adjust the uniformity of the plasma in the processing regions P2 and P3.

[0173] Furthermore, according to each embodiment, the resonator array structures 321-323, 331-337 have multiple resonators 301 arranged perpendicular to the first surface of the dielectric. As a result, the plasma processing apparatus 1,700 can perform uniform plasma processing in the radial direction of the rotary table 2 and stage 702 while achieving high plasma density by a magnetic field along the first surface of the dielectric.

[0174] Furthermore, according to each embodiment, the dielectric is provided on the top plate 11,711 of the processing vessel, and the multiple resonators 301,601 are arranged on the wall surface (projection 92) of a fan-shaped (housing 90) recess (central part 93) provided on the top plate 11,711, which is surrounded by two sides radiating from the center of the rotating table. As a result, the plasma processing apparatus 1,700 can generate plasma by treating the area below the central part 93 as a cell.

[0175] Furthermore, according to each embodiment, the resonator array structures 331 to 337 are integrated with the dielectric (central portion 93), and the multiple resonators 301 and 601 are arranged on the wall surfaces of recesses (cells 331a, 336a, and 337a) provided on the first surface of the dielectric. As a result, the plasma processing apparatus 1,700 can generate plasma in the internal space of the recesses (cells 331a, 336a, and 337a).

[0176] Furthermore, according to modified versions 6 and 13, a Faraday shield 315, 425 is further provided between the electromagnetic wave supply unit and the dielectric. The Faraday shields 315, 425 have slits 315a, 425a provided at positions corresponding to the multiple resonators 301. As a result, the plasma processing apparatus 1 can suppress plasma excitation and discharge in processing regions P2, P3 other than directly below the multiple resonators 301 or directly below the cell 331a.

[0177] Furthermore, according to each embodiment, the electromagnetic wave supply unit is a coil. As a result, the plasma processing apparatus 1,700 can supply a magnetic field corresponding to the opening direction of the coil to a plurality of resonators 301,601.

[0178] Furthermore, according to each embodiment, the electromagnetic wave supply unit is a rod antenna or a waveguide antenna. As a result, the plasma processing apparatus 1,700 can supply a rotating magnetic field to a plurality of resonators 301,601.

[0179] Furthermore, according to each embodiment, the rotary table 2 can accommodate multiple substrates W in the substrate mounting area (recess 24). As a result, the plasma processing apparatus 1 can perform semi-batch processing on multiple substrates W.

[0180] Furthermore, according to the fifth embodiment, the rotary table (stage 702) is rotatable around the center of the substrate W as the center of rotation, and further includes nozzles 31 and 33 that supply processing gas to a second space (processing region P1) which is part of the processing space and different from the first space. As a result, the plasma processing apparatus 1 can perform ALD (Atomic Layer Deposition) processing for each of the multiple regions set on a single substrate W.

[0181] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0182] Furthermore, the embodiments and modifications described above can be combined as appropriate, provided that the processing content and configuration are not inconsistent.

[0183] Furthermore, in the above embodiments, an antenna 83 which is a solenoid-shaped coil, or an antenna 83a connected to a coaxial tube was used as the antenna for inputting electromagnetic waves, but the invention is not limited to these. In other words, as long as a magnetic field can be generated in a direction that penetrates the ring member 311, such as a ring member 311, such as a plurality of resonators 301 of a resonator array structure 300, the invention is not limited to these. Such an antenna for inputting electromagnetic waves is not limited to antenna 83 or antenna 83a, and any antenna or mechanism for inputting electromagnetic waves can be used, such as a monopole antenna, slot antenna, inductively coupled coil, capacitively coupled electrode, or magnetron.

[0184] Furthermore, this disclosure can also be structured as follows: (1) A processing container that provides a processing space, A rotating table is provided, in which a substrate mounting area for horizontally placing a substrate is formed on one side thereof, and the substrate mounting area is configured to be rotatable within the processing container. A dielectric is provided with its first surface facing a first space which is part of the processing space, An electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation supplied to the first space, An electromagnetic wave supply unit is positioned above the dielectric and configured to supply the electromagnetic waves to the first space via the dielectric, A resonator array structure comprising a plurality of resonators capable of resonating with the magnetic field component of the electromagnetic wave and having a size smaller than the wavelength of the electromagnetic wave, arranged along the first surface of the dielectric, It has, The electromagnetic wave supply unit supplies the electromagnetic waves, which include a magnetic field component perpendicular to the plane in which the plurality of resonators are arranged, to the first space. Plasma processing equipment. (2) The plurality of resonators are arranged such that their arrangement density differs between the central side and the outer periphery side of the rotating table. The plasma processing apparatus described in (1) above. (3) The plurality of resonators are arranged such that the arrangement density is higher on the outer periphery. The plasma processing apparatus described in (2) above. (4) The plurality of resonators have different resonant frequencies for the resonator on the central side of the rotary table and the resonator on the outer periphery side. The plasma processing apparatus described in (2) above. (5) The dielectric is a sector-shaped element enclosed by two sides radiating from the center of the rotating table. A plasma processing apparatus according to any one of (1) to (4) above. (6) The resonator array structure is such that the plurality of resonators are arranged in a direction along the first surface of the dielectric. The plasma processing apparatus described in (5) above. (7) The resonator array structure is rectangular in shape and is movable around one end of the rectangular shape as an axis. The plasma processing apparatus described in (6) above. (8) The resonator array structure is such that the plurality of resonators are arranged in a direction perpendicular to the first surface of the dielectric. The plasma processing apparatus described in (5) above. (9) The dielectric is provided on the top plate of the processing container, The plurality of resonators are arranged on the wall surface of a fan-shaped recess provided on the top plate, which is enclosed by two sides radiating from the center of the rotating table. The plasma processing apparatus described in (8) above. (10) The aforementioned resonator array structure is integrated with the dielectric, The plurality of resonators are arranged on the wall surface of a recess provided on the first surface of the dielectric, The plasma processing apparatus described in (8) above. (11) A Faraday shield is further provided between the electromagnetic wave supply unit and the dielectric, The Faraday shield has slits provided at positions corresponding to the plurality of resonators. A plasma processing apparatus according to any one of (1) to (10) above. (12) The electromagnetic wave supply unit is a coil. A plasma processing apparatus according to any one of (1) to (11) above. (13) The electromagnetic wave supply unit is a rod antenna or a waveguide antenna. A plasma processing apparatus according to any one of (1) to (11) above. (14) The rotary table is capable of placing multiple substrates on the substrate mounting area. A plasma processing apparatus according to any one of (1) to (13) above. (15) The rotary table is rotatable with the center of the substrate as the center of rotation. The processing space further includes a nozzle for supplying processing gas to a second space, which is a part of the processing space and is different from the first space. A plasma processing apparatus according to any one of (1) to (13) above. [Explanation of Symbols]

[0185] 1,700 Plasma Processing Equipment 1a Vacuum container 2 Rotating Tables 11,711 Tabletop 24 Recess (Substrate mounting area) 80,80a Plasma Generator 31, 33 nozzles 83,83a antenna 85,530 RF power supplies 90, 90b~90u cabinet 92,92d Protrusion 93 Central part 120 Control Unit 300, 320~338 Resonator array structure 301,601 resonator 311 Ring member 315,425 Faraday Shield 315a, 425a Slit Cells 331a, 336a, 337a 701 Processing container 702 Stages Fr resonant frequency P1, P2, P3 processing areas W wafer (substrate)

Claims

1. A processing container that provides a processing space, A rotating table is provided, in which a substrate mounting area for horizontally placing a substrate is formed on one side thereof, and the substrate mounting area is configured to be rotatable within the processing container. A dielectric is provided with its first surface facing a first space which is part of the processing space, An electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation supplied to the first space, An electromagnetic wave supply unit is positioned above the dielectric and configured to supply the electromagnetic waves to the first space via the dielectric, A resonator array structure comprising a plurality of resonators capable of resonating with the magnetic field component of the electromagnetic wave and having a size smaller than the wavelength of the electromagnetic wave, arranged along the first surface of the dielectric, It has, The electromagnetic wave supply unit supplies the electromagnetic waves, which include a magnetic field component perpendicular to the plane in which the plurality of resonators are arranged, to the first space. Plasma processing equipment.

2. The plurality of resonators are arranged such that their arrangement density differs between the central side and the outer periphery side of the rotating table. The plasma processing apparatus according to claim 1.

3. The plurality of resonators are arranged such that the arrangement density is higher on the outer periphery. The plasma processing apparatus according to claim 2.

4. The plurality of resonators have different resonant frequencies for the resonator on the central side of the rotary table and the resonator on the outer periphery side. The plasma processing apparatus according to claim 2.

5. The dielectric is a sector-shaped element enclosed by two sides radiating from the center of the rotating table. The plasma processing apparatus according to claim 1 or 2.

6. The resonator array structure is such that the plurality of resonators are arranged in a direction along the first surface of the dielectric. The plasma processing apparatus according to claim 5.

7. The resonator array structure is rectangular in shape and is movable around one end of the rectangular shape as an axis. The plasma processing apparatus according to claim 6.

8. The resonator array structure is such that the plurality of resonators are arranged in a direction perpendicular to the first surface of the dielectric. The plasma processing apparatus according to claim 5.

9. The dielectric is provided on the top plate of the processing container, The plurality of resonators are arranged on the wall surface of a fan-shaped recess provided on the top plate, which is enclosed by two sides radiating from the center of the rotating table. The plasma processing apparatus according to claim 8.

10. The aforementioned resonator array structure is integrated with the dielectric, The plurality of resonators are arranged on the wall surface of a recess provided on the first surface of the dielectric, The plasma processing apparatus according to claim 8.

11. A Faraday shield is further provided between the electromagnetic wave supply unit and the dielectric, The Faraday shield has slits provided at positions corresponding to the plurality of resonators. The plasma processing apparatus according to claim 1.

12. The electromagnetic wave supply unit is a coil. The plasma processing apparatus according to claim 1.

13. The electromagnetic wave supply unit is a rod antenna or a waveguide antenna. The plasma processing apparatus according to claim 1.

14. The rotary table is capable of placing multiple substrates on the substrate mounting area. The plasma processing apparatus according to claim 1.

15. The rotary table is rotatable with the center of the substrate as the center of rotation. The processing space further includes a nozzle for supplying processing gas to a second space, which is a part of the processing space and is different from the first space. The plasma processing apparatus according to claim 1.

Images