Method for manufacturing heteroepitaxial wafers

Abstract

The objective is to provide a method for manufacturing heteroepitaxial wafers that can reduce the warping of heteroepitaxial wafers regardless of the characteristics of the wafer crystal, such as silicon, and without requiring additional processes. [Solution] A method for manufacturing a heteroepitaxial wafer includes the steps of: placing a wafer on a susceptor having one or more through holes formed in the wafer mounting portion; and introducing a reaction gas after placing the wafer on the susceptor to form a heteroepitaxial film on the surface of the wafer and at the same time forming a film partially on the back surface of the wafer.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a heteroepitaxial wafer.

Background Art

[0002] In recent semiconductor devices, in addition to miniaturization, the adoption of different materials other than silicon is also progressing. For example, the applications are wide-ranging, including silicon germanium and germanium as high-mobility channel materials, silicon germanium as a sacrificial layer in gate-all-around structures and nanosheet structures, and silicon carbide and gallium nitride as high-efficiency power device materials. In a heteroepitaxial wafer in which such a different material film is formed on silicon, problems such as wafer warpage and dislocation formation occur due to epitaxial stress caused by the difference in lattice constant from silicon and stress during temperature rise and fall due to the difference in thermal expansion coefficient. There is a need for a film formation method for heteroepitaxial wafers that reduces and solves such problems.

[0003] Patent Document 1 describes a method of suppressing warpage by doping a crystal with high concentrations of oxygen and nitrogen.

[0004] Patent Document 2 describes a method of suppressing warpage by forming another type of film for gettering in advance or after the fact.

[0005] Patent Document 3 describes a method of suppressing warpage by performing epitaxial growth on the entire front and back surfaces.

[0006] Patent Document 4 describes a method for manufacturing a SiC composite substrate having a single-crystal SiC layer on a polycrystalline SiC substrate, characterized in that a single-crystal SiC layer is provided on the surface of a holding substrate made of Si having silicon oxide films on both the front and back surfaces to create a single-crystal SiC layer support, then a part or all of the thickness of the silicon oxide film on a part or the entire back surface of the holding substrate in the single-crystal SiC layer support is removed to impart warping to the single-crystal SiC layer support, then polycrystalline SiC is deposited on the single-crystal SiC layer by chemical vapor deposition to form a polycrystalline SiC substrate, and then the holding substrate is physically and / or chemically removed. [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] Japanese Patent Publication No. 2010-013341 [Patent Document 2] Japanese Patent Publication No. 2010-040609 [Patent Document 3] International Publication No. 2009 / 001833 [Patent Document 4] Japanese Patent Publication No. 2017-059626 [Overview of the project] [Problems that the invention aims to solve]

[0008] While there are examples of techniques to reduce the warping of heteroepitaxial wafers as described above, these often require specific types of silicon crystals or additional processes. Therefore, there is a need for a simpler and more straightforward method to reduce the warping of heteroepitaxial wafers.

[0009] The present invention has been made in view of the above circumstances, and aims to provide a method for manufacturing heteroepitaxial wafers that can reduce the warping of heteroepitaxial wafers regardless of the characteristics of the wafer crystal, such as silicon, and without requiring additional processes. [Means for solving the problem]

[0010] The present invention has been made to achieve the above objective, and is characterized by a method for manufacturing a heteroepitaxial wafer, comprising the steps of: placing a wafer on a susceptor having one or more through holes formed in the wafer mounting portion; and introducing a reaction gas after placing the wafer on the susceptor to form a heteroepitaxial film on the surface of the wafer and at the same time forming a film partially on the back surface of the wafer.

[0011] According to the present invention, in a method for manufacturing heteroepitaxial wafers, through-holes are already formed in the susceptor portion on which the wafer rests during epitaxial growth. When a film is deposited on the surface, a film is simultaneously deposited on the back surface through these through-holes, thereby improving wafer warpage. The film on the back surface is deposited not over the entire wafer surface, but only in the portion that reflects the pattern of the susceptor's through-holes. Therefore, if the area of ​​the through-holes occupies a certain area, a sufficient effect in reducing wafer warpage can be obtained. Thus, according to the present invention, the warping of a heteroepitaxial wafer can be reduced regardless of the characteristics of the wafer crystal, such as silicon, and without requiring any additional processes.

[0012] In this case, the area of ​​the film deposited on the back surface of the wafer can be set to 0.5% or more and 90% or less of the area of ​​the back surface of the wafer. In other words, it is desirable that the area of ​​the film deposited on the back surface of the wafer be within this range relative to the area of ​​the back surface of the wafer.

[0013] In this case, the area of ​​the film deposited on the back surface of the wafer can be 1% to 50% of the area of ​​the back surface of the wafer. It is more desirable for the area of ​​the film deposited on the back surface of the wafer to be within this range relative to the area of ​​the back surface of the wafer.

[0014] In this case, the area of ​​the film deposited on the back surface of the wafer can be 3% to 30% of the area of ​​the back surface of the wafer. It is even more desirable that the area of ​​the film deposited on the back surface of the wafer be within this range relative to the area of ​​the back surface of the wafer.

[0015] In this case, the total area of ​​all through-holes in the susceptor can be set to 0.5% or more and 50% or less of the area of ​​the back surface of the wafer. It is desirable that the total area of ​​all through-holes in the susceptor be within this range relative to the area of ​​the back surface of the wafer.

[0016] In this case, the total area of ​​all through-holes in the susceptor can be set to 1% or more and 10% or less of the area of ​​the back surface of the wafer. It is more desirable that the total area of ​​all through-holes in the susceptor be within this range relative to the area of ​​the back surface of the wafer.

[0017] In this case, the positions of the multiple through holes in the susceptor can be made point-symmetric with respect to the center position of the susceptor. This makes it possible to suppress the bias of the film deposited on the back surface of the wafer towards a part of the back surface of the wafer.

[0018] In this case, the pressure used when depositing the heteroepitaxial film can be set to 1 mTorr or more and 100 Torr or less. It is desirable that the pressure used when depositing the heteroepitaxial film be within this range. When depositing under reduced pressure, the mean free path of the raw material gas increases, which increases the amount of raw material gas that seeps to the back side, thus further improving the effect of reducing wafer warpage.

[0019] In this case, the pressure used when depositing the heteroepitaxial film can be between 1 Torr and 30 Torr. A pressure of this magnitude is more desirable when depositing the heteroepitaxial film. When depositing under reduced pressure, the mean free path of the source gas increases, which increases the amount of source gas that seeps to the back side, thus further improving the effect of reducing wafer warpage.

[0020] In this case, after forming the heteroepitaxial film, the partially formed film can be removed by polishing the back surface of the wafer. This prevents the film partially formed on the back surface of the wafer from interfering with operations after the formation of the heteroepitaxial film.

[0021] In this case, the diameter of the wafer can be set to 300 mm or more. It is desirable that the diameter of the wafer be of this order.

[0022] In this case, the heteroepitaxial film can be made of silicon germanium. The present invention can also be applied when forming silicon germanium as a heteroepitaxial film.

[0023] In this case, one or more of GeH4, Ge2H6, and GeCl4 can be used as the germanium source gas when forming the heteroepitaxial film. It is desirable to use one or more of GeH4, Ge2H6, and GeCl4 as the germanium source gas.

[0024] In this case, one or more of SiH4, SiH2Cl2, SiHCl3, Si2H6, and SiCl4 can be used as the silicon source gas when forming the heteroepitaxial film. It is desirable to use one or more of SiH4, SiH2Cl2, SiHCl3, Si2H6, and SiCl4 as the silicon source gas. Effects of the Invention

[0025] As described above, with the method for manufacturing a heteroepitaxial wafer of the present invention, warpage of the heteroepitaxial wafer can be reduced regardless of the crystal characteristics of a wafer such as a silicon wafer, and without requiring additional steps. Brief Description of the Drawings

[0026] [Figure 1]An example of a partial cross-sectional view of an epitaxial growth apparatus used in the method for manufacturing heteroepitaxial wafers of the present invention is shown. [Figure 2] A plan view of an example of a susceptor used in the heteroepitaxial wafer manufacturing method of the present invention is shown. [Figure 3] This shows a plan view of a modified susceptor used in the method for manufacturing heteroepitaxial wafers of the present invention. [Figure 4] This graph shows the correlation between the area ratio of through-holes in the susceptor and the warp of the wafer after film deposition. [Figure 5] This graph shows the correlation between the deposition pressure during film formation on a heteroepitaxial wafer and the warp of the heteroepitaxial wafer after film formation, when the area ratio of the susceptor through-holes is 1%. [Modes for carrying out the invention]

[0027] Embodiments of the present invention will be described below with reference to the drawings, but the present invention is not limited thereto.

[0028] <Epitaxial growth device> The epitaxial growth apparatus 1 shown in Figure 1 is an example of a heteroepitaxial wafer manufacturing apparatus that deposits a heteroepitaxial film 13 on the surface 12 of a single silicon wafer 11 and simultaneously deposits a film 15 partially on the back surface 14. The heteroepitaxial wafer 10 may include a silicon wafer 11, a heteroepitaxial film 13, and a film 15. The silicon wafer 11 is an example of a wafer.

[0029] The epitaxial growth apparatus 1 also includes a chamber 16, a susceptor 22, and a controller 30. The controller 30 controls the operation of each part of the epitaxial growth apparatus 1.

[0030] A heating lamp 32 is provided above the chamber 16. A heating lamp 33 is provided below the chamber 16. The controller 30 can individually control the outputs of lamps 32 and 33. Reaction gases, carrier gases, and dopant gases, which are the raw materials for the heteroepitaxial films 13 and 15, are introduced into the chamber 16. Each supplied gas flows along the surface 12 of the silicon wafer 11. After that, each gas is discharged to the outside of the chamber 16.

[0031] The susceptor 22 is located inside the chamber 16. A silicon wafer 11 is placed on the susceptor 22. The susceptor 22 is rotatably supported by a shaft 18. A drive source 20 is connected to the shaft 18. The drive source 20 is controlled by the controller 30. In the drive state controlled by the controller 30, the drive source 20 rotates the shaft 18, thereby rotating the susceptor 22.

[0032] The susceptor 22 is formed in a disc shape and has an upper surface 23 and a lower surface 24. A concave recessed portion 25 is formed on the upper surface 23. The recessed portion 25 is an example of a wafer mounting portion on which a silicon wafer 11 is placed. The silicon wafer 11 is placed inside the recessed portion 25. Specifically, the recessed portion 25 has a circular bottom portion 25A in plan view and an inclined portion 25B that slopes diagonally upward from the outer periphery of the bottom portion 25A. The outer periphery of the silicon wafer 11 is supported by the inclined portion 25B. A space is formed between the silicon wafer 11 and the bottom portion 25A.

[0033] Furthermore, one or more through holes 26 and three pin insertion holes 27 are formed in the bottom 25A of the susceptor 22. The through holes 26 and pin insertion holes 27 each penetrate the susceptor 22 from the bottom 25A to the lower surface 24. If there are multiple through holes 26, each is sized to allow gas to flow through. A lift pin (not shown) is inserted into the pin insertion hole 27. Note that there may be only one through hole 26.

[0034] As shown in Figure 2, when the susceptor 22 is viewed from above, it is preferable that the positions of the multiple through holes 26 of the susceptor 22 are point-symmetric with respect to the center position C of the susceptor 22. Specifically, the multiple through holes 26 are arranged radially and point-symmetrically with respect to the center position C. Note that it is not necessary for all of the multiple through holes 26 to be point-symmetrically arranged with respect to each other. It is sufficient if at least some of the multiple through holes 26 are point-symmetrically arranged.

[0035] The through-hole 26 has, for example, a diameter of 1.6 mm (opening area of ​​2 mm²). 2 The diameter of the through-holes is r. The multiple through-holes 26 are arranged in 60 directions at intervals of 10 mm and 6°, within the range of 40 mm ≤ r ≤ 140 mm, where r is the radius of the susceptor 22. Of these 660 holes, three are pin insertion holes 27.

[0036] Figure 3 shows a susceptor 42 as a modified example of the susceptor 22 (Figure 2). The susceptor 42 has a recessed portion 25 formed therein. A silicon wafer 11 (Figure 1) is placed inside the recessed portion 25. The susceptor 42 also has a number of through holes 44 and three pin insertion holes 27 formed therein. The through holes 44 and pin insertion holes 27 each penetrate the susceptor 42 in the vertical direction.

[0037] When the susceptor 42 is viewed from above (plan view), the positions of the multiple through holes 44 of the susceptor 42 are point-symmetric with respect to the center position C of the susceptor 42. Specifically, the multiple through holes 44 are arranged concentrically and point-symmetrically within a range of r ≤ 140 mm from the center position C, where r is the radius of the susceptor 42. It is preferable that at least some of the multiple through holes 44 are arranged in a point-symmetrical manner.

[0038] The through-hole 44 has, for example, a diameter of 1.6 mm (opening area of ​​2 mm²). 2The through holes 44 are arranged at 10 mm intervals, totaling 1000 locations. Of these 1000 locations, 3 are pin insertion holes 27. The number of through holes 44 is 0.7 per cm in any part within the range of r ≤ 140 mm from the center position C. 2 The arrangement is such that the above-mentioned through holes 44 are formed.

[0039] The diameter of the silicon wafer 11 (Figure 1) can be 300 mm or more. A diameter of approximately this size is desirable for the silicon wafer 11. In other words, since warping increases when the diameter of the silicon wafer 11 is 300 mm or more, the effect of reducing the warping of the heteroepitaxial wafer 10 becomes more pronounced as the wafer diameter increases.

[0040] Silicon germanium can be used as the material for the heteroepitaxial film 13 (Figure 1). Thus, the configuration of the present invention can also be used when forming a heteroepitaxial film 13 using silicon germanium.

[0041] <Method for manufacturing heteroepitaxial wafers> Next, as an example of a method for manufacturing a heteroepitaxial wafer 10, a manufacturing method including the first and second steps will be described. The components of the epitaxial growth apparatus 1 (Figure 1) will be described using the reference numerals shown in Figures 1 and 2.

[0042] (1st step) In the first step, the silicon wafer 11 is placed in the recessed portion 25 of the susceptor 22. This creates a space between the silicon wafer 11 and the recessed portion 25.

[0043] (2nd process) After placing the silicon wafer 11 on the susceptor 22, a reaction gas is introduced to deposit a heteroepitaxial film 13 on the surface 12 of the silicon wafer 11, while simultaneously depositing a film 15 partially on the back surface 14 of the silicon wafer 11. Specifically, the reaction gas flows through multiple through holes 26 into the space between the silicon wafer 11 and the bottom 25A of the counterbore 25, causing the film 15 to be deposited at multiple locations on the back surface 14.

[0044] Thus, during the growth of the heteroepitaxial film 13, through-holes 26 are already formed in the susceptor 22 on which the silicon wafer 11 is mounted. When the film is deposited on the surface 12, the film 15 is also deposited on the back surface 14 through the through-holes 26 at the same time, making it possible to improve the warping of the silicon wafer 11.

[0045] Specifically, the film 15 on the back surface 14 is deposited not over the entire surface of the silicon wafer 11, but only partially, more specifically, only in the areas that reflect the pattern of the through-holes 26 of the susceptor 22. Therefore, if the area (opening area) of the through-holes 26 occupies a certain area, the area where the film 15 is deposited will be larger, and it will be able to resist the deformation stress acting on the silicon wafer 11. This provides a sufficient effect in reducing the warpage of the silicon wafer 11. Furthermore, in film deposition under reduced pressure, the mean free path of the raw material gas increases, which increases the amount of raw material gas that flows around to the back surface 14, thus further enhancing the effect of improving the warpage of the silicon wafer 11.

[0046] Thus, in the manufacturing method of the heteroepitaxial wafer 10, through-holes 26 are already formed in the susceptor 22 portion on which the silicon wafer 11 rests during epitaxial growth. When a film is deposited on the surface 12, a film 15 is simultaneously deposited on the back surface 14 through the through-holes 26, thereby improving the warpage of the silicon wafer 11. The film 15 on the back surface 14 is deposited not over the entire surface of the silicon wafer 11, but only in the portion that reflects the pattern of the through-holes 26 of the susceptor 22. Therefore, if the area of ​​the through-holes 26 occupies a certain area, a sufficient effect in reducing the warpage of the silicon wafer 11 can be obtained. Furthermore, when depositing under reduced pressure, the mean free path of the raw material gas increases, which increases the amount of raw material gas that flows around to the back surface 14, thus further enhancing the effect of improving the warpage of the silicon wafer 11.

[0047] Therefore, according to the method for manufacturing the heteroepitaxial wafer 10 of this embodiment, the warping of the heteroepitaxial wafer 10 can be reduced regardless of the characteristics of the wafer crystal, such as silicon, and without requiring any additional steps.

[0048] In the epitaxial growth apparatus 1 shown in Figure 1, the area of ​​the film 15 deposited on the back surface 14 of the silicon wafer 11 in a plan view can be between 0.5% and 90% of the area of ​​the back surface 14 of the silicon wafer 11 in a plan view. In other words, it is desirable that the area of ​​the film 15 deposited on the back surface of the silicon wafer 11 be approximately this size relative to the area of ​​the back surface 14 of the silicon wafer 11.

[0049] Furthermore, the area of ​​the film 15 deposited on the back surface 14 in a plan view can be 1% to 50% of the area of ​​the back surface 14 of the silicon wafer 11 in a plan view. It is more desirable that the area of ​​the film 15 deposited on the back surface of the silicon wafer 11 be approximately this size relative to the area of ​​the back surface 14 of the silicon wafer 11.

[0050] Furthermore, the area of ​​the film 15 deposited on the back surface 14 in a plan view can be set to 3% or more and 30% or less of the area of ​​the back surface 14 of the silicon wafer 11 in a plan view. It is desirable that the area of ​​the film 15 deposited on the back surface 14 of the silicon wafer 11 be approximately this size relative to the area of ​​the back surface 14 of the silicon wafer 11.

[0051] For all through-holes 26 of the susceptor 22, the total area in plan view (let's call it Sa) can be set to 0.5% or more and 50% or less of the area in plan view of the back surface 14 of the silicon wafer 11 (let's call it Sb). It is desirable that the total area Sa of all through-holes 26 of the susceptor 22 be approximately this amount relative to the area Sb of the back surface 14 of the silicon wafer 11. This ensures a reliable reduction in the warping of the heteroepitaxial wafer 10.

[0052] Furthermore, the total area Sa can be set to 1% to 10% of the area Sb. It is more desirable that the total area Sa of all through-holes 26 of the susceptor 22 be within this range relative to the area of ​​the back surface 14 of the silicon wafer 11. This further reduces the warping of the heteroepitaxial wafer 10.

[0053] As shown in Figure 2, the positions of the multiple through-holes 26 in the susceptor 22 are preferably, for example, point-symmetrical with respect to the center position C of the susceptor 22. This prevents the film 15 deposited on the back surface 14 of the silicon wafer 11 from being biased towards a part of the back surface 14 of the silicon wafer 11. Note that the positions of the multiple through-holes 26 do not necessarily have to be point-symmetrical with respect to the center position C. Also, the opening areas of the multiple through-holes 26 do not all need to be the same size; they may be of different sizes.

[0054] The pressure used to deposit the heteroepitaxial film 13 can be between 1 mTorr and 100 Torr. This range of pressure is desirable. Furthermore, the pressure used to deposit the heteroepitaxial film 13 can be between 1 Torr and 30 Torr. This range of pressure is even more desirable. This further reduces the warping of the heteroepitaxial wafer 10.

[0055] After the heteroepitaxial film 13 is deposited, the partially deposited film 15 can be removed by polishing the back surface 14 of the silicon wafer 11. This prevents the partially deposited film 15 on the back surface 14 of the silicon wafer 11 from interfering with the work after the heteroepitaxial film 13 has been deposited.

[0056] The method for manufacturing the heteroepitaxial wafer 10 of this embodiment can also be used when forming a silicon germanium film 13. In this case, it is desirable to use one or more of GeH4, Ge2H6, and GeCl4 as the germanium source gas. Furthermore, it is desirable to use one or more of SiH4, SiH2Cl2, SiHCl3, Si2H6, and SiCl4 as the silicon source gas when forming the heteroepitaxial film 13. [Examples]

[0057] The present invention will be further described below based on examples, but these examples are illustrative and not intended to be interpreted as limiting. Reference numerals refer to Figure 1.

[0058] (Example 1) A 3 μm silicon germanium film was deposited on a φ300 mm diameter silicon wafer 11 at a pressure of 10 Torr using a susceptor 22 as shown in Figure 2. This susceptor 22 has multiple through-holes 26. The total area Sa of all through-holes 26 is set to 0.5 to 50% of the area Sb of the silicon wafer 11. The film deposition was performed using this susceptor 22. 1 Torr = 133.32 Pa.

[0059] As shown in Figure 4, the warp of the deposited heteroepitaxial wafer 10 was evaluated using KLA's WaferSight2+ and was found to be between 5 and 30 μm. Warp is expressed as the difference between the maximum and minimum distances from the central plane located in the center of the wafer's thickness direction.

[0060] (Example 2) To deposit a 3 μm thick silicon germanium film on a silicon wafer 11 with a diameter of φ300 mm, a susceptor 42 as shown in Figure 3 was prepared. This susceptor 42 has multiple through-holes 44 formed in it. The multiple through-holes 44 are formed such that the total area Sa of all the through-holes 44 is 1% of the area Sb of the silicon wafer 11. Using this susceptor 42, silicon germanium was deposited under pressure conditions of 1 mTorr to 100 Torr.

[0061] As shown in Figure 5, the warp of the deposited heteroepitaxial wafer 10 was evaluated to be 10-30 μm.

[0062] (Comparative Example 1) A susceptor was prepared to deposit a 3μm thick silicon germanium film on a φ300mm diameter silicon wafer. This susceptor did not have through-holes. In other words, the area of ​​the through-holes was considered to be 0% of the area of ​​the silicon wafer. Using this susceptor, the silicon germanium film was deposited under a pressure of 10 Torr.

[0063] As shown in Figure 4, the warp of the deposited heteroepitaxial wafer was evaluated to be 50 μm.

[0064] Figure 4 shows a summary of the results for Example 1 and Comparative Example 1. In the following explanation, the ratio of the total area of ​​all through-holes to the area of ​​the wafer, when the susceptor and wafer are viewed from one direction, will be referred to as the "through-hole area ratio."

[0065] Compared to using a susceptor without through-holes (through-hole area ratio of 0%), using a susceptor with a through-hole area ratio of 0.5-50% significantly improved the warp of the heteroepitaxial wafer after film deposition. A through-hole area ratio of 0.5% was sufficient to demonstrate a significant warp reduction effect.

[0066] Furthermore, if the through-hole area ratio is 50% or less, the necessary strength for mounting the wafer can be stably ensured, and sufficient thermal resistance can also be ensured.

[0067] Figure 5 summarizes the results of Example 2. As the pressure during film deposition on the heteroepitaxial wafer decreases, the mean free path of the raw material gas increases, and the amount of raw material gas that wraps around to the back surface 14 (Figure 1) of the heteroepitaxial wafer 10 also increases, making it easier for the film to be deposited on the back surface 14 of the heteroepitaxial wafer 10. As a result, the effect of improving the warpage of the heteroepitaxial wafer 10 is further enhanced.

[0068] According to the embodiment of the present invention, the warping of a heteroepitaxial wafer could be reduced regardless of the characteristics of the wafer crystal, such as silicon, and without requiring any additional processes.

[0069] This specification includes the following embodiments: [1]: A method for manufacturing a heteroepitaxial wafer, comprising the steps of: placing a wafer on a susceptor having one or more through holes formed in the wafer mounting portion; and introducing a reaction gas after placing the wafer on the susceptor to form a heteroepitaxial film on the surface of the wafer and at the same time forming a film partially on the back surface of the wafer. [2]: The method for manufacturing a heteroepitaxial wafer according to [1], wherein the area of ​​the film formed on the back surface of the wafer is 0.5% or more and 90% or less of the area of ​​the back surface of the wafer. [3]: The method for manufacturing a heteroepitaxial wafer according to [1], wherein the area of ​​the film formed on the back surface of the wafer is 1% or more and 50% or less of the area of ​​the back surface of the wafer. [4]: The method for manufacturing a heteroepitaxial wafer according to [1], wherein the area of ​​the film formed on the back surface of the wafer is 3% or more and 30% or less of the area of ​​the back surface of the wafer. [5]: A method for manufacturing a heteroepitaxial wafer according to [1], [2], [3], or [4], wherein the total area of ​​all through-holes of the susceptor is 0.5% or more and 50% or less of the area of ​​the back surface of the wafer. [6]: A method for manufacturing a heteroepitaxial wafer according to [1], [2], [3], or [4], wherein the total area of ​​all through-holes of the susceptor is 1% or more and 10% or less of the area of ​​the back surface of the wafer. [7]: A method for manufacturing a heteroepitaxial wafer according to [1], [2], [3], [4], [5], or [6], wherein the positions of the multiple through holes of the susceptor are point-symmetric with respect to the center position of the susceptor. [8]: A method for manufacturing a heteroepitaxial wafer according to [1], [2], [3], [4], [5], [6] or [7], wherein the pressure used when forming the heteroepitaxial film is 1 mTorr or more and 100 Torr or less. [9]: A method for manufacturing a heteroepitaxial wafer according to [1], [2], [3], [4], [5], [6] or [7], wherein the pressure when forming the heteroepitaxial film is 1 Torr or more and 30 Torr or less.

[10] : A method for manufacturing a heteroepitaxial wafer according to [1], [2], [3], [4], [5], [6], [7], [8], or [9] above, wherein after the heteroepitaxial film is formed, the partially formed film is removed by polishing the back surface of the wafer.

[11] : A method for manufacturing a heteroepitaxial wafer according to [1], [2], [3], [4], [5], [6], [7], [8], [9] or

[10] , wherein the diameter of the wafer is 300 mm or more.

[12] : A method for manufacturing a heteroepitaxial wafer according to [1], [2], [3], [4], [5], [6], [7], [8], [9],

[10] or

[11] , wherein the heteroepitaxial film is made of silicon germanium.

[13] : A method for manufacturing a heteroepitaxial wafer according to [1], [2], [3], [4], [5], [6], [7], [8], [9],

[10] ,

[11] or

[12] above, using one or more of GeH4, Ge2H6, and GeCl4 as the germanium source gas when forming the heteroepitaxial film.

[14] : A method for manufacturing a heteroepitaxial wafer according to [1], [2], [3], [4], [5], [6], [7], [8], [9],

[10] ,

[11] ,

[12] , or

[13] , wherein one or more of SiH4, SiH2Cl2, SiHCl3, Si2H6, and SiCl4 are used as the silicon source gas when forming the heteroepitaxial film.

[0070] It should be noted that the present invention is not limited to the embodiments (examples) described above. The embodiments described above are illustrative, and any configuration that is substantially identical to the technical idea described in the claims of the present invention and achieves similar effects is included within the technical scope of the present invention. [Explanation of Symbols]

[0071] 1…Epitaxial growth apparatus, 10…Heteroepitaxial wafer, 11…Silicon wafer, 12…Front surface, 13…Heteroepitaxial film, 14…Back surface, 15…Film, 16…Chamber, 18…Shaft, 20…Drive source, 22…Susceptor, 23…Top surface, 24…Bottom surface, 25…Counterbore section, 25A…Bottom section, 25B…Inclined section, 26…Through hole, 27…Pin insertion hole, 30…Controller, 32…Lamp, 33…Lamp, 42…Susceptor, 44…Through hole. C...Center position.

Claims

1. A method for manufacturing heteroepitaxial wafers, A step of placing a wafer on a susceptor having one or more through holes formed in the wafer mounting portion, The process involves placing the wafer on the susceptor and then introducing a reaction gas to form a heteroepitaxial film on the surface of the wafer while simultaneously forming a film partially on the back surface of the wafer. A method for manufacturing heteroepitaxial wafers, characterized by including [a certain element].

2. The method for manufacturing a heteroepitaxial wafer according to claim 1, characterized in that the area of ​​the film formed on the back surface of the wafer is 0.5% or more and 90% or less of the area of ​​the back surface of the wafer.

3. The method for manufacturing a heteroepitaxial wafer according to claim 1, characterized in that the area of ​​the film formed on the back surface of the wafer is 1% or more and 50% or less of the area of ​​the back surface of the wafer.

4. The method for manufacturing a heteroepitaxial wafer according to claim 1, characterized in that the area of ​​the film formed on the back surface of the wafer is 3% or more and 30% or less of the area of ​​the back surface of the wafer.

5. A method for manufacturing a heteroepitaxial wafer according to any one of claims 1 to 4, characterized in that the total area of ​​all through-holes in the susceptor is 0.5% or more and 50% or less of the area of ​​the back surface of the wafer.

6. A method for manufacturing a heteroepitaxial wafer according to any one of claims 1 to 4, characterized in that the total area of ​​all through-holes in the susceptor is 1% or more and 10% or less of the area of ​​the back surface of the wafer.

7. A method for manufacturing a heteroepitaxial wafer according to any one of claims 1 to 4, characterized in that the positions of the plurality of through holes in the susceptor are point-symmetric with respect to the center position of the susceptor.

8. A method for manufacturing a heteroepitaxial wafer according to any one of claims 1 to 4, characterized in that the pressure used when forming the heteroepitaxial film is 1 mTorr or more and 100 Torr or less.

9. A method for manufacturing a heteroepitaxial wafer according to any one of claims 1 to 4, characterized in that the pressure used when forming the heteroepitaxial film is 1 Torr or more and 30 Torr or less.

10. A method for manufacturing a heteroepitaxial wafer according to any one of claims 1 to 4, characterized in that after forming the heteroepitaxial film, the partially formed film is removed by polishing the back surface of the wafer.

11. A method for manufacturing a heteroepitaxial wafer according to any one of claims 1 to 4, characterized in that the diameter of the wafer is 300 mm or more.

12. A method for manufacturing a heteroepitaxial wafer according to any one of claims 1 to 4, characterized in that the heteroepitaxial film is made of silicon germanium.

13. As the germanium source gas when forming the heteroepitaxial film, GeH ４ , Ge ２ H ６ GeCl ４ A method for manufacturing a heteroepitaxial wafer according to claim 12, characterized by using one or more of the following.

14. As the silicon source gas for depositing the heteroepitaxial film, SiH ４ , SiH ２ Cl ２ , SiHCl ３ , Si ２ H ６ , SiCl ４ The method for producing a heteroepitaxial wafer according to claim 12, wherein at least one of the above is used.

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