Light-emitting module and method for manufacturing a light-emitting module

Abstract

This improves heat dissipation from heat sources such as semiconductor laser elements. [Solution] A light-emitting module comprising: a base having an upper surface and a lower surface, with a marking provided in a marking area which is a part of the lower surface; one or more semiconductor laser elements, including a first semiconductor laser element disposed on the upper surface of the base and emitting light in a first direction from a light-emitting point on a light-emitting surface; and a heat-dissipating substrate having a heat-dissipating portion that is joined to the lower surface of the base via a bonding material, wherein the area of ​​the lower surface including the marking area is joined to the heat-dissipating substrate via the bonding material, and with respect to the first direction, the midpoint of the width of the marking area is not located between the ends of the first semiconductor laser element in a top view, and a first virtual straight line parallel to the first direction passes through the marking area and the first semiconductor laser element in a top view.

Description

Technical Field

[0001] The present invention relates to a light-emitting module and a method for manufacturing the light-emitting module.

Background Art

[0002] Japanese Unexamined Patent Application Publication No. 2004-22981 discloses a semiconductor package marked with product information. In this semiconductor package, a tab for mounting a semiconductor chip is provided, and product information is marked on the back surface of the tab.

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of Invention

Problem to be Solved by the Invention

[0004] In the technical field related to the present disclosure, there is a problem of improving heat dissipation performance for heat generated from a heat source such as a semiconductor laser element.

[0005] Alternatively, instead of the above-described problem, there is a problem of achieving miniaturization of an apparatus or a module.

[0006] Further, the problems are not limited to the respective problems described above, and there are problems that can be recognized from the description of the present specification in consideration of common general technical knowledge in the technical field related to the present disclosure.

[0007] Further, the problems are not limited to the respective problems described above, and obtaining the effect that can be understood to be achieved by the technical matters described in the present specification in consideration of common general technical knowledge in the technical field related to the present disclosure can be a problem to be solved.

[0008] The present invention solves at least one of the respective problems described above.

Means for Solving the Problem

[0009] The light-emitting module disclosed in the embodiment comprises a base having an upper surface and a lower surface, with a marking provided in a marking region which is a part of the lower surface; one or more semiconductor laser elements, including a first semiconductor laser element disposed on the upper surface of the base and emitting light in a first direction from a light-emitting point on a light-emitting surface; and a heat-dissipating substrate having a heat-dissipating portion that is joined to the lower surface of the base via a bonding material, wherein the region of the lower surface including the marking region is joined to the heat-dissipating substrate via the bonding material, and with respect to the first direction, the midpoint of the width of the marking region is not located between the ends of the first semiconductor laser element in a top view, and a first virtual straight line parallel to the first direction passes through the marking region and the first semiconductor laser element in a top view.

[0010] The light-emitting module disclosed in the embodiment can be manufactured by a manufacturing method that includes the steps of: preparing a heat dissipation substrate; preparing a light-emitting device comprising: preparing a base having an upper surface and a lower surface, with a marking applied to a marking area which is a part of the lower surface, and arranging a first semiconductor laser element on the upper surface such that light is emitted in a first direction from a light-emitting point on a light-emitting surface; acquiring management information from the marking; and joining the base to the heat dissipation substrate such that the area of ​​the lower surface including the marking area is joined to the heat dissipation substrate via a bonding material; wherein, in the step of arranging the first semiconductor laser element, the first semiconductor laser element is arranged on the upper surface of the base such that, in a top view, with respect to the first direction, the midpoint of the width of the marking area is not located between the ends of the first semiconductor laser element, and in a top view, a first virtual straight line parallel to the first direction passes through the marking area and the first semiconductor laser element. [Brief explanation of the drawing]

[0011] [Figure 1] Figure 1 is a perspective view of a light-emitting module according to an embodiment. [Figure 2] Figure 2 is a perspective view of the light-emitting device according to an embodiment. [Figure 3] Figure 3 is a top view of the light-emitting device according to the embodiment. [Figure 4A] FIG. 4A is a side view of the light-emitting device according to the embodiment. [Figure 4B] FIG. 4B is a cross-sectional view of the light-emitting device according to the embodiment, taken along line IVB-IVB in FIG. 3. [Figure 5] FIG. 5 is a perspective view of the inside of the package of the light-emitting device according to the embodiment. [Figure 6A] FIG. 6A is a top view of the inside of the package of the light-emitting device according to the embodiment. [Figure 6B] FIG. 6B is an enlarged top view in which the internal space of the package in FIG. 6A is enlarged. [Figure 7] FIG. 7 is a perspective view of a package. [Figure 8] FIG. 8 is a cross-sectional view of the package taken along line VIII-VIII in FIG. 7. [Figure 9] FIG. 9 is a top view of a base body. [Figure 10] FIG. 10 is a bottom view of the base body. [Figure 11] FIG. 11 is a cross-sectional view of the base body taken along line XI-XI in FIG. 9. [Figure 12] FIG. 12 is a top view showing a state where other components are arranged on a submount. [Figure 13] FIG. 13 is a side view showing a state where other components are arranged on the submount. [Figure 14] FIG. 14 is a top view of the light-emitting module according to the embodiment. [Figure 15A] FIG. 15A is a top view of a wiring board. [Figure 15B] FIG. 15B is a partially enlarged view of FIG. 15A, in which a portion related to the positional relationship between the wiring board and the semiconductor laser element and the like is enlarged. [Figure 15C] FIG. 15C is a schematic cross-sectional view of the wiring board taken along line XVC-XVC in FIG. 15A. [Figure 16] FIG. 16 is a top view showing the inside of the package of each light-emitting device in the light-emitting module according to the embodiment. [Mode for Carrying Out the Invention]

[0012] In this specification and in the claims, with respect to polygons such as triangles and quadrilaterals, the term "polygon" shall include shapes in which the corners of the polygon have been rounded, chamfered, or otherwise modified. Furthermore, shapes in which modifications have been made not only to the corners (ends of the sides) but also to the middle parts of the sides shall also be referred to as polygons. In other words, shapes that retain the shape of a polygon but have been partially modified are included in the interpretation of "polygon" as described in this specification and in the claims.

[0013] Furthermore, the same applies not only to polygons, but also to words describing specific shapes such as trapezoids, circles, and concave shapes. The same also applies when dealing with each side that forms such a shape. In other words, even if a side has been processed at a corner or in the middle, the interpretation of "side" includes the processed part. When distinguishing a "polygon" or "side" without partial processing from a processed shape, the term "strictly" should be added, for example, "strictly quadrilateral."

[0014] Furthermore, in this specification or the claims, descriptions such as up and down (up / down), left and right, front and back, front and back (front / back), and front and back merely describe relative positions, orientations, and directions, and do not necessarily correspond to the relationships during use.

[0015] Furthermore, directions such as the X, Y, and Z directions may be indicated in the drawings using arrows. The direction of these arrows is consistent across multiple drawings representing the same embodiment. In the drawings, the direction of arrows marked X, Y, and Z is considered the positive direction, and the opposite direction is considered the negative direction. For example, the direction indicated by an X at the end of the arrow is the X direction and is also the positive direction. In this specification, the direction that is both the X direction and the positive direction will be referred to as the "positive X direction," and the opposite direction will be referred to as the "negative X direction." When referring to the "X direction," both the positive and negative directions are included. The same applies to the Y and Z directions.

[0016] Furthermore, in this specification, when an object is identified as "one or more" and described accordingly, the form in which there is one object and the form in which there are multiple objects are described together. Accordingly, the description identifying an object as "one or more" supports any of the embodiments comprising one or more objects, embodiments comprising at least one object, and embodiments comprising multiple objects.

[0017] Furthermore, in this specification, descriptions describing "one or each" of an object are a combined description of one object in an embodiment having one object, one object in an embodiment having multiple objects, and each of the multiple objects in an embodiment having multiple objects. Accordingly, descriptions describing "one or each" of an object support any of the following: in an embodiment having one object, this one object provides the description; in an embodiment having multiple objects, at least one of these objects provides the description; in an embodiment having multiple objects, each of these multiple objects provides the description; and in an embodiment having one or more objects, all objects provide the description.

[0018] Furthermore, in this specification, the terms "component" and "part" may be used when describing components, for example. "Component" refers to an object that is treated as a single physical unit. An object that is treated as a single physical unit can also be an object that is treated as a single part in the manufacturing process. On the other hand, "part" refers to an object that does not necessarily have to be treated as a single physical unit. For example, "part" is used when considering a part of one component, or when considering multiple components together as a single object.

[0019] Furthermore, the distinction between "component" and "part" as described above does not indicate an intention to consciously limit the scope of rights in the interpretation of the doctrine of equivalents. In other words, even if a component is described as a "component" in the claims, this alone does not mean that the applicant recognizes that treating this component as a physical unit is indispensable for the application of the present invention.

[0020] Furthermore, in this specification or the claims, when there are multiple components and each is to be expressed separately, the components may be distinguished by adding "1st," "2nd," etc., to their names. Also, the objects being distinguished may differ between this specification and the claims. Therefore, even if a component with the same prefix as in this specification is described in the claims, the objects identified by this component may not be the same in this specification and the claims.

[0021] For example, if there are components designated as “First,” “Second,” and “Third” in this specification to distinguish them, and these components are described in the claims as “First” and “Third” in this specification, then for readability, the components may be distinguished in the claims as “First” and “Second.” In this case, the components designated as “First” and “Second” in the claims refer to the components designated as “First” and “Third” in this specification, respectively. This rule is not limited to components, but can be applied to other subjects in a reasonable and flexible manner.

[0022] The following describes embodiments for carrying out the present invention. Furthermore, specific embodiments for carrying out the present invention will be described with reference to the drawings. However, the embodiments for carrying out the present invention are not limited to these specific embodiments. In other words, the illustrated embodiments are not the only forms in which the present invention is realized. Note that the size and positional relationships of the components shown in each drawing may be exaggerated for the sake of ease of understanding.

[0023] <Embodiment> A light-emitting module 901 according to an embodiment will be described. Figures 1 to 16 are drawings illustrating an exemplary form of the light-emitting device 1. Figure 1 is a perspective view of the light-emitting module 901. Figure 2 is a perspective view of the light-emitting device 1. Figure 3 is a top view of the light-emitting device 1. Figure 4A is a side view of the light-emitting device 1. Figure 4B is a cross-sectional view of the light-emitting device 1 along the line IVB-IVB in Figure 3. Figure 5 is a perspective view of the inside of the package 10 of the light-emitting device 1. Figure 6A is a top view of the inside of the package 10 of the light-emitting device 1. Figure 6B is an enlarged top view of the internal space of the package 10 in Figure 6A. In Figure 6B, the position of the marking area R1 on the bottom surface where the marking 13B is applied is indicated by dashed hatching. Figure 7 is a perspective view of the package 10. Figure 8 is a cross-sectional view of the package 10 along the line VIII-VIII in Figure 7. Figure 9 is a top view of the substrate 11. Figure 10 is a bottom view of the substrate 11. In Figure 10, the marking area R1 is hatched. Figure 11 is a cross-sectional view of the substrate 11 along the line XI-XI in Figure 9. Figure 12 is a top view with other components arranged on the submount 30. Figure 13 is a side view with other components arranged on the submount 30. Figure 14 is a top view of the light-emitting module 901. In Figure 14, the positions of the first part P1 and the second part P2 are indicated by hatching with different orientations. Figure 15A is a top view of the wiring board 101. In Figure 15A, the positions of the first semiconductor laser element 20A, the first submount 30A, and the first part P1 when the light-emitting device 1 is mounted are indicated by dashed hatching. Figure 15B is a magnified view of Figure 15A, showing the positional relationship between the heat dissipation portion 101D and the insulating portion 101F of the wiring board 101, the first semiconductor laser element 20A, the first submount 30A, and the first portion P1. Figure 15C is a schematic cross-sectional view of the wiring board 101 along the XVC-XVC line in Figure 15A. Figure 16 is a top view showing the inside of the package of each light-emitting device 1 in the light-emitting module 901. Note that the wiring 60 is omitted in Figures 4B, 5, 6B, and 16.

[0024] The light-emitting module 901 comprises multiple components. These components include one or more light-emitting devices 1, a wiring board 101, a connector 201, and a thermistor 301.

[0025] The light-emitting module 901 may also have other components. For example, the light-emitting module 901 may have a different light-emitting device than the light-emitting device 1. Also, the light-emitting module 901 may not have some of the components listed here.

[0026] The light-emitting device 1 comprises a plurality of components. These components include a package 10, one or more semiconductor laser elements 20, one or more submounts 30, one or more reflective members 40, one or more protective elements 50, multiple wirings 60, and optical members 70.

[0027] Furthermore, the light-emitting device 1 may have other components. For example, the light-emitting device 1 may have additional semiconductor laser elements in addition to the one or more semiconductor laser elements 20. Also, the light-emitting device 1 may not have some of the components listed here.

[0028] First, let's explain each component.

[0029] (Package 10) Package 10 comprises a base 11 and a lid 14. Package 10 is formed by joining the lid 14 to the base 11. Within package 10, an internal space is defined where other components are arranged. This internal space is a closed space surrounded by the base 11 and the lid 14. Furthermore, this internal space can be a space sealed in a vacuum or airtight state.

[0030] In a top view, the outer edge shape of package 10 is rectangular. This rectangle can have a long side and a short side. In the illustrated package 10, the direction of the long side of this rectangle is the same as the X direction, and the direction of the short side is the same as the Y direction. Note that the outer edge shape of package 10 does not have to be rectangular in a top view.

[0031] In package 10, an internal space is formed where other components are arranged. The first upper surface 11A of package 10 is part of the region that defines the internal space. In addition, each inner surface 11E and the lower surface 14B of package 10 are part of the region that defines the internal space.

[0032] The base 11 has a first upper surface 11A and a lower surface 11B. The base 11 has a second upper surface 11C. The base 11 has one or more outer surfaces 11D. The base 11 has one or more inner surfaces 11E. One or more outer surfaces 11D intersect with the second upper surface 11C. One or more outer surfaces 11D intersect with the lower surface 11B. One or more inner surfaces 11E intersect with the second upper surface 11C.

[0033] In a top view, the outer edge shape of the base 11 is rectangular. In a top view, the outer edge shape of the base 11 is the same as the outer edge shape of the package 10. In a top view, the outer edge shape of the first top surface 11A is rectangular. This rectangle can be a rectangle with a long side and a short side. The direction of the long side of the first top surface 11A is parallel to the direction of the long side of the outer edge shape of the base 11. Note that in a top view, the outer edge shape of the first top surface 11A does not have to be rectangular.

[0034] In a top view, the first top surface 11A is surrounded by the second top surface 11C. The second top surface 11C is an annular surface that surrounds the first top surface 11A in a top view. The second top surface 11C is a rectangular annular surface. Here, the frame defined by the inner edge of the second top surface 11C is called the inner frame of the second top surface 11C, and the frame defined by the outer edge of the second top surface 11C is called the outer frame of the second top surface 11C.

[0035] The base 11 has a recess surrounded by a frame formed by the second upper surface 11C. The recess defines a portion of the base 11 that is recessed below the second upper surface 11C. The first upper surface 11A is part of the recess. One or more inner surfaces 11E are part of the recess. The second upper surface 11C is located above the first upper surface 11A.

[0036] The base 11 has one or more stepped portions 11F. Each stepped portion 11F has an upper surface 11G and a side surface 11H that intersects with the upper surface 11G and extends downward from the upper surface 11G. Here, each stepped portion 11F has only one upper surface 11G and one side surface 11H. The upper surface 11G intersects with the inner side surface 11E. The side surface 11H intersects with the first upper surface 11A.

[0037] Each of the stepped portions 11F is located inside the inner frame of the second upper surface 11C when viewed from above. Each of the stepped portions 11F is formed along part or all of the inner surface 11E when viewed from above. In the base body 11, the side surface 11H is an inner surface, but side surface 11H and inner surface 11E are different surfaces. Each of the inner surfaces 11E and each of the side surfaces 11H are perpendicular to the first upper surface 11A. Perpendicularity here allows for a difference of ±3 degrees.

[0038] One or more stepped sections 11F may include a first stepped section 11F1 and a second stepped section 11F2. The first stepped section 11F1 and the second stepped section 11F2 are provided at positions where their respective side surfaces 11H face each other. The first stepped section 11F1 and the second stepped section 11F2 are provided on the short side of the inner frame of the second upper surface 11C.

[0039] The base 11 has a base portion 11M and a frame portion 11N. The base portion 11M and the frame portion 11N may be made of different materials. The base 11 may be composed of a base member corresponding to the base portion 11M and a frame member corresponding to the frame portion 11N.

[0040] The base portion 11M includes a first upper surface 11A. The frame portion 11N includes a second upper surface 11C. The frame portion 11N includes one or more outer surfaces 11D and one or more inner surfaces 11E. The frame portion 11N includes one or more stepped portions 11F.

[0041] The lower surface of the base portion 11M constitutes part or all of the area of ​​the lower surface 11B of the base body 11. If the lower surface of the base portion 11M constitutes part of the area of ​​the lower surface 11B of the base body 11, the lower surface of the frame portion 11N constitutes the remaining area of ​​the lower surface 11B of the base body.

[0042] The base body 11 has a plurality of wiring sections 12A. The plurality of wiring sections 12A include one or more internal wiring sections 12A1 arranged in the internal space of the package 10 and one or more external wiring sections 12A2 provided on the outer surface of the package 10.

[0043] One or each of the internal wiring sections 12A1 is provided on the upper surface 11G of the stepped section 11F. The base body 11 has one or more internal wiring sections 12A1 provided on the upper surface 11G of the first stepped section 11F1. The base body 11 has one or more internal wiring sections 12A1 provided on the upper surface 11G of the second stepped section 11F2.

[0044] One or each of the outer wiring sections 12A2 is provided on the lower surface 11B of the package 10. One or each of the outer wiring sections 12A2 is provided on the lower surface of the frame section 11N. Note that the outer wiring sections 12A2 may be provided on an outer surface different from the lower surface 11B of the package 10.

[0045] When viewed from above, the base body 11 is divided into two regions by a virtual line passing through the side surface 11H of the first stepped portion 11F1 and parallel to this side surface 11H. In the region that includes the upper surface 11G of the first stepped portion 11F1, the base body 11 has one or more external wiring portions 12A2 provided on the lower surface 11B of the base body 11.

[0046] When viewed from above, the base body 11 is divided into two regions by a virtual line passing through the side surface 11H of the second stepped portion 11F2 and parallel to this side surface 11H. In the region that includes the upper surface 11G of the second stepped portion 11F2, the base body 11 has one or more external wiring portions 12A2 provided on the lower surface 11B of the base body 11.

[0047] In the base 11, one or each of the inner wiring sections 12A1 are electrically connected to the outer wiring section 12A2. One or more inner wiring sections 12A1 are electrically connected to different outer wiring sections 12A2.

[0048] The base body 11 has a joining pattern 13A. The joining pattern 13A is provided on the second upper surface 11C. The joining pattern 13A is provided in an annular shape. The joining pattern 13A is provided in a rectangular annular shape. In a top view, the first upper surface 11A is surrounded by the joining pattern 13A.

[0049] A marking 13B is applied to the base 11. The marking 13B is applied to the lower surface 11B. The marking 13B is provided on the lower surface of the base 11M. The marking 13B is provided in a marking area R1, which is a part of the lower surface 11B of the base 11M. The marking area R1 is the smallest rectangular area that encompasses the marking 13B. Each side of the rectangle that forms the outline of the marking area R1 is parallel to either the short side direction or the long side direction of the base 11.

[0050] With respect to the shorter side, the midpoint of the width of the marking area R1 does not coincide with the midpoint of the width of the lower surface of the base 11M. With respect to the shorter side, the midpoint of the width of the lower surface of the base 11M is not located between the two ends of the marking area R1. The center of the lower surface of the base 11M is not included in the marking area R1.

[0051] With respect to the shorter side, the distance from one end of the lower surface of the base 11M to the marking area R1 is smaller than the width of the marking area R1, and the distance from the other end to the marking area R1 is larger than the width of the marking area R1. This distance from one end to the marking area R1 may be 3.0 mm or more.

[0052] With respect to the longer side, the midpoint of the width of the lower surface of the base 11M lies between the two ends of the marking area R1. With respect to the longer side, the midpoint of the width of the marking area R1 coincides with the midpoint of the width of the lower surface of the base 11M.

[0053] The area of ​​the marking region R1 is 1.0 mm². 2 2.5mm or more 2 The following is possible: The ratio of the area of ​​the marking region R1 to the area of ​​the lower surface of the base 11M will be 10% or less.

[0054] Marking 13B indicates information that is a combination of letters, numbers, symbols, etc., as appropriate. Marking 13B may be represented as coded information. For example, existing two-dimensional codes can be used for the coded information. Note that Marking 13B may also be represented without coding.

[0055] For example, a marking 13B is used to manage the mass-produced substrates 11. This marking is not limited to information that can manage individual substrates 11; it may also be information that can manage multiple substrates 11. The management information recorded in the marking 13B can be used for quality control of the substrates 11, manufacturing control of products using the substrates 11, and product tracking. The management information recorded in the marking 13B may include, for example, one or more of the following: manufacturing lot information, substrate identification information, and aggregate board information. Manufacturing lot information is information that can identify the manufacturing lot in which the substrate 11 is produced. Substrate identification information is information that can identify individual substrates 11. Aggregate board information is information that can identify an aggregate board when multiple substrates 11 are connected to form a single aggregate board.

[0056] The substrate 11 can be formed, for example, using ceramic as the main material. Examples of ceramics that can be used as the main material for the substrate 11 include aluminum nitride, silicon nitride, aluminum oxide, or silicon carbide.

[0057] Here, the main material refers to the material that accounts for the largest proportion in mass or volume of the object being considered. Furthermore, if the object is formed from a single material, that material is the main material. In other words, for a material to be the main material includes the possibility of that material accounting for 100% of the total.

[0058] The base body 11 may be formed using a base member and a frame member formed using different main materials. The base member can be formed using, for example, a metal or a composite containing a metal, graphite, diamond, or other material with excellent heat dissipation properties as the main material. Examples of metals that can be used as the main material of the base member include copper, aluminum, or iron. Examples of composites containing a metal that can be used as the main material of the base member include copper molybdenum or copper tungsten. The frame member can be formed using, for example, a ceramic as the main material, as mentioned above as the main material of the base body 11.

[0059] To achieve a base body 11 with excellent heat dissipation, it is preferable to use a material with a higher thermal conductivity for the main material of the base member than for the main material of the frame member. From this viewpoint, in relation to the frame member, the base member can be considered a heat dissipation member. An insulating material may be used for the main material of the frame member.

[0060] The wiring section 12A can be formed, for example, using a metal material as the main material. Examples of the metal material that serves as the main material for the wiring section 12A include elemental metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, and W, or alloys containing these metals. The wiring section 12A can be composed of, for example, one or more metal layers.

[0061] The bonding pattern 13A can be formed, for example, using a metallic material as the main material. Examples of metallic materials that can be used as the main material for the bonding pattern 13A include elemental metals such as Cu, Ag, Ni, Au, Sn, Ti, and Pd, or alloys containing these metals. The bonding pattern 13A can be composed of, for example, one or more metallic layers.

[0062] Known techniques can be used to form the marking 13B. For example, the marking 13B can be applied to the surface of the base 11M, which is mainly made of metal, by laser printing.

[0063] The lid 14 has an upper surface 14A and a lower surface 14B. The lid 14 also has one or more side surfaces 14C. The lid 14 is constructed in the shape of a rectangular parallelepiped. However, the shape of the lid 14 does not have to be a rectangular parallelepiped.

[0064] The lid 14 is joined to the base 11. The lower surface 14B of the lid 14 is joined to the second upper surface 11C of the base 11. The lid 14 is joined to the joining pattern 13A of the base 11. The lid 14 is joined to the base 11 via adhesive.

[0065] The lid 14 is translucent, meaning it transmits light. Here, translucency means that the transmittance of light incident on the lid 14 is 80% or more. The lid 14 may also have a non-translucent region (a region that does not transmit light) in part.

[0066] The lid 14 can be formed, for example, using glass as the main material. The lid 14 can also be formed, for example, using sapphire as the main material.

[0067] Furthermore, a cap (frame member) in which the lid 14 is integrated with the frame portion 11N may be joined to a flat base portion 11M to form the package 10. In this case, an opening is provided in the vertical direction inside the inner frame defined by the inner edge of the lower surface of the frame portion 11N, extending from the lower surface of the frame portion 11N to the lower surface 14B of the lid 14, and the base portion 11M is joined to the frame portion 11N in such a way that it closes this opening when viewed from above. In this case, the base portion 11 can become the package 10. The base portion 11 for the package 10 means that it may be a part of the package 10, or it may be the package 10 itself.

[0068] (Semiconductor laser element 20) The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and a plurality of side surfaces 21C. The shape of the upper surface 21A is a rectangle with a long side and a short side. The external shape of the semiconductor laser element 20 when viewed from above is a rectangle with a long side and a short side. However, the shape of the upper surface 21A and the external shape of the semiconductor laser element 20 when viewed from above are not limited to these.

[0069] The semiconductor laser element 20 has a light-emitting surface 22 that emits light. For example, the side surface 21C can be the light-emitting surface 22. The side surface 21C that becomes the light-emitting surface 22 intersects with the short side of the top surface 21A. Alternatively, for example, the top surface 21A can be the light-emitting surface 22.

[0070] The semiconductor laser element 20 can be a single-emitter semiconductor laser element consisting of one emitter. Alternatively, the semiconductor laser element 20 can be a multi-emitter semiconductor laser element consisting of multiple emitters.

[0071] For example, the semiconductor laser element 20 can be a semiconductor laser element that emits blue light. Alternatively, for example, the semiconductor laser element 20 can be a semiconductor laser element that emits green light. Alternatively, for example, the semiconductor laser element 20 can be a semiconductor laser element that emits red light. In addition, the semiconductor laser element 20 may be a semiconductor laser element that emits light of other colors or wavelengths.

[0072] Here, blue light is defined as light whose emission peak wavelength is in the range of 420 nm to 494 nm. Green light is defined as light whose emission peak wavelength is in the range of 495 nm to 570 nm. Red light is defined as light whose emission peak wavelength is in the range of 605 nm to 750 nm.

[0073] Examples of semiconductor laser elements 20 that emit blue light or green light include semiconductor laser elements containing nitride semiconductors. Examples of nitride semiconductors include GaN-based semiconductors such as GaN, InGaN, and AlGaN. Examples of semiconductor laser elements 20 that emit red light include semiconductor laser elements containing InAlGaP-based, GaInP-based, and GaAs-based semiconductors such as GaAs and AlGaAs.

[0074] The semiconductor laser element 20 emits directional laser light. Divergent light with a broad spread is emitted from the light-emitting surface 22 (emission end face) of the semiconductor laser element 20. The light emitted from the semiconductor laser element 20 forms an elliptical far-field pattern (hereinafter referred to as "FFP") on a plane parallel to the light-emitting surface 22. FFP is the shape and light intensity distribution of the emitted light at a position away from the light-emitting surface of the semiconductor laser element.

[0075] Here, the light passing through the center of the elliptical shape of the FFP, in other words, the light with the peak intensity in the FFP's light intensity distribution, is referred to as light traveling along the optical axis, or light passing through the optical axis. Furthermore, in the FFP's light intensity distribution, 1 / e is applied to the peak intensity value. 2 Light with the above intensity will be referred to as the main part of the light.

[0076] The shape of the FFP (Fiber Focused Plane) of the light emitted from the semiconductor laser element 20 is an ellipse, with the stacking direction being longer than the direction perpendicular to the stacking direction, in a plane parallel to the light emission surface 22. The stacking direction refers to the direction in which multiple semiconductor layers, including the active layer, are stacked in the semiconductor laser element 20. The direction perpendicular to the stacking direction can also be called the plane direction of the semiconductor layer. Furthermore, the major axis direction of the elliptical shape of the FFP can be called the speed axis direction of the semiconductor laser element 20, and the minor axis direction can be called the slow axis direction of the semiconductor laser element 20.

[0077] Based on the light intensity distribution of FFP, 1 / e of the peak light intensity 2The angle at which light of intensity 7 spreads is defined as the light divergence angle of the semiconductor laser element 20. Here, the light divergence angle is calculated by dividing the light of peak intensity (light passing through the optical axis) by 1 / e of the peak intensity. 2 The angle of light divergence is expressed as the angle formed by light of intensity 1 / e of the peak light intensity. 2 In addition to the light intensity, it can also be determined from, for example, the light intensity at half the peak light intensity. In this specification, when we simply refer to the "angle of light divergence," we mean 1 / e of the peak light intensity. 2 This refers to the angle of light divergence at a given light intensity.

[0078] The divergence angle in the speed axis direction of the light emitted from the semiconductor laser element 20 may be between 30 degrees and less than 70 degrees. Furthermore, the divergence angle in the slow axis direction of this light may be greater than 0 degrees and less than or equal to 20 degrees. Additionally, the divergence angle in the speed axis direction is greater than the divergence angle in the slow axis direction.

[0079] (Submount 30) The submount 30 has an upper surface 31A, a lower surface 31B, and one or more side surfaces 31C. The upper surface 31A can be considered the mounting surface on which other components are mounted. The shape of the upper surface 31A is rectangular. This rectangle of the upper surface 31A may have a short side and a long side. However, the shape of the upper surface 31A does not have to be rectangular.

[0080] The external shape of the submount 30 in a top view is rectangular. This rectangle of the submount 30 may have a short side and a long side. However, the external shape of the submount 30 in a top view does not have to be rectangular. In a top view, the submount 30 may have an external shape in which the length in one direction (hereinafter referred to as the short side direction of the submount 30) is smaller than the length in the direction perpendicular to it (hereinafter referred to as the long side direction of the submount 30). In the illustrated submount 30, the short side direction is the same direction as the X direction, and the long side direction is the same direction as the Y direction.

[0081] The submount 30 may be composed of a substrate 32A and an upper metal member 32B. The submount 30 may also be composed of a lower metal member 32C. The upper metal member 32B is provided on the upper side of the substrate 32A. The lower metal member 32C is provided on the lower side of the substrate 32A. The submount 30 may also have a wiring layer 33. The wiring layer 33 is provided on top of the upper metal member 32B.

[0082] The substrate 32A is insulating. The substrate 32A is formed from, for example, silicon nitride, aluminum nitride, or silicon carbide. For the main material of the substrate 32A, it is preferable to select a ceramic with relatively good heat dissipation (high thermal conductivity).

[0083] The main material of the upper metal member 32B is a metal such as copper or aluminum. The upper metal member 32B has one or more metal layers. The upper metal member 32B may have multiple metal layers, each primarily made of a different metal.

[0084] The main material of the lower metal member 32C is a metal such as copper or aluminum. The lower metal member 32C has one or more metal layers. The lower metal member 32C may have multiple metal layers, each primarily made of a different metal.

[0085] The wiring layer 33 can be formed using metal. For example, the wiring layer 33 can be formed using AuSn solder (a metal layer of AuSn).

[0086] For example, the length of the submount 30 in the short side direction is between 750 μm and 850 μm. Also, the length of the submount 30 in the long side direction is between 1900 μm and 2700 μm. Furthermore, the difference between the length in the long side direction and the length in the short side direction of the submount 30 is between 1150 μm and 1950 μm.

[0087] For example, the thickness of the submount 30 (width in the direction perpendicular to the top surface 31A) is 250 μm or more and 350 μm or less. Also, for example, the thickness of the substrate 32A is 150 μm or more and 250 μm or less. Also, for example, the thickness of the upper metal member 32B is 35 μm or more and 65 μm or less. Also, for example, the thickness of the lower metal member 32C is 35 μm or more and 65 μm or less. Also, for example, the thickness of the wiring layer 33 is 1.0 μm or more and 5.0 μm or less.

[0088] (Reflective member 40) The reflective member 40 has a lower surface 41A and a light-reflecting surface 41B that reflects light. The light-reflecting surface 41B is inclined with respect to the lower surface 41A. The straight line connecting the lower end and upper end of the light-reflecting surface 41B is inclined with respect to the lower surface 41A. The angle at which the light-reflecting surface 41B is inclined with respect to the lower surface 41A is called the inclination angle of the light-reflecting surface 41B.

[0089] The light-reflecting surface 41B is flat. However, the light-reflecting surface 41B may be curved. The inclination angle of the light-reflecting surface 41B is 45 degrees. However, the inclination angle of the light-reflecting surface 41B does not have to be 45 degrees.

[0090] The main material of the reflective member 40 can be glass or metal. It is preferable to use a heat-resistant material as the main material of the reflective member 40. For example, the main material can be glass such as quartz or BK7 (borosilicate glass), or metal such as Al. The reflective member 40 can also be formed using Si as the main material.

[0091] If the main material is a reflective material such as Al, the light-reflecting surface 41B can be formed from the main material. Alternatively, instead of forming the light-reflecting surface 41B with the main material, the general shape of the reflective member 40 may be formed with the main material, and the light-reflecting surface 41B may be formed on the surface of the general shape. In this case, the light-reflecting surface 41B can be formed using, for example, a metal layer such as Ag or Al, or a dielectric multilayer film such as Ta2O5 / SiO2, TiO2 / SiO2, or Nb2O5 / SiO2.

[0092] The light-reflecting surface 41B has a reflectance of 90% or more with respect to the peak wavelength of light irradiated onto it. This reflectance may also be 95% or more. Furthermore, this reflectance may be 99% or more. The light reflectance is 100% or less, or less than 100%.

[0093] (Protection element 50) The protective element 50 has a top surface, a bottom surface, and one or more sides. The shape of the protective element 50 is a rectangular parallelepiped. However, the shape of the protective element 50 does not have to be a rectangular parallelepiped.

[0094] The protective element 50 is designed to prevent excessive current from flowing through a specific element (such as a semiconductor laser element) and causing it to be damaged. An example of the protective element 50 is a Zener diode. Furthermore, a Zener diode made of silicon can be used.

[0095] (Wiring 60) The wiring 60 is a linear conductive material with joints at both ends. The joints at both ends become connection points with other components. The wiring 60 is used for electrical connection between two components. The wiring 60 is, for example, a metal wire. The metal can be, for example, gold, aluminum, silver, copper, etc.

[0096] (Optical component 70) The optical member 70 has an upper surface 71A, a lower surface 71B, and one or more side surfaces 71C. The optical component 70 exerts an optical effect on the light incident upon it. Examples of optical effects exerted on light by the optical component 70 include focusing, collimation, diffusion, polarization, diffraction, multiplexing, light guidance, reflection, and wavelength conversion.

[0097] The optical member 70 has an optical surface that provides an optical effect. The upper surface 71A, the lower surface 71B, or the side surface 71C can be the optical surface. Alternatively, the optical surface may be located at a position different from the upper surface 71A, the lower surface 71B, and the side surface 71C. For example, the optical surface may be formed inside the optical member 70 rather than on its surface.

[0098] The optical component 70 may have one or more lens surfaces 71D. The lens surface 71D is the optical working surface of the optical component 70. The optical component 70 having a lens surface 71D may also be called a lens component. Light that passes through the lens surface 71D and is emitted from the optical component 70 is subjected to optical effects such as focusing, diffusion, or collimation by the optical component 70. For example, the optical component 70 is a collimating lens that emits collimated light after light incident on the optical component 70.

[0099] One or each lens surface 71D is located on the upper surface 71A side. Alternatively, the lens surface 71D may be located on the lower surface 71B side. The upper surface 71A and the lower surface 71B are flat. One or each lens surface 71D intersects with the upper surface 71A. In a top view, one or each lens surface 71D is surrounded by the upper surface 71A.

[0100] In a top view, the outer shape of the optical element 70 is rectangular. However, the outer shape of the optical element 70 in a top view does not have to be rectangular. The bottom surface 71B is flat. No lens surface 71D is formed on the bottom surface 71B side of the optical element 70. The shape of the bottom surface 71B is rectangular. However, the shape of the bottom surface 71B does not have to be rectangular.

[0101] In the optical member 70, the portion that overlaps with the lens surface 71D when viewed from above is defined as the lens portion 72A. In the optical member 70, the portion that overlaps with the upper surface 71A when viewed from above is defined as the non-lens portion 72B. The lower surface 71B has a region that constitutes the lower surface of one or each of the lens portions 72A and a region that constitutes the lower surface of the non-lens portion 72B.

[0102] The optical member 70 may have a plurality of lens surfaces 71D formed in a continuous line in one direction. In a top view, the direction in which the plurality of lens surfaces 71D are aligned is called the lens connection direction. In the illustrated optical member 70, the connection direction is the same direction as the X direction.

[0103] Multiple lens surfaces 71D are formed such that the vertices of each lens surface 71D lie on a straight line. This imaginary line connecting each vertex is parallel to the lower surface 71B of the optical member 70. Note that this parallelism includes a difference of ±5 degrees.

[0104] Some or all of the multiple lens surfaces 71D may have the same curvature, and two or more of these lens surfaces 71D may have the same curvature. All of the multiple lens surfaces 71D may have the same curvature.

[0105] The optical component 70 is translucent. The optical component 70 has a transmittance of 80% or more for the peak wavelength of light incident on it. The optical component 70 may have a translucent region and a non-translucent region (hereinafter referred to as the non-translucent region). In the non-translucent region, the transmittance for the peak wavelength of light incident on the optical component 70 is 50% or less. The optical component 70 can be formed using glass such as BK7, for example.

[0106] (Light-emitting device 1) In the light-emitting device 1, one or more semiconductor laser elements 20 are arranged in the internal space of the package 10. The one or more semiconductor laser elements 20 are placed on the substrate 11. The one or more semiconductor laser elements 20 are placed on the first upper surface 11A. Because the one or more semiconductor laser elements 20 are placed on the upper surface, the marking 13B is located on the back side of the surface on which the semiconductor laser elements 20 are placed.

[0107] One or more semiconductor laser elements 20 include at least a first semiconductor laser element 20A. One or more semiconductor laser elements 20 can be composed of multiple semiconductor laser elements 20, including the first semiconductor laser element 20A.

[0108] Each semiconductor laser element 20 emits light from the light emission point on the light emission surface 22 in a first direction. In the illustrated light-emitting device 1, the first direction is the same direction as the positive direction of Y. Alternatively, the first direction can be defined by any other direction that is the same as the positive direction of Y, instead of being defined by the direction of light emission from the light emission point on the light emission surface 22.

[0109] In a top view, a virtual line L1 parallel to the first direction passes through the first semiconductor laser element 20A. In a top view, the virtual line L1 may pass through the light-emitting surface 22, which is the side surface 21C of the first semiconductor laser element 20A. In a top view, the virtual line L1 may pass through the side surface 21C of the first semiconductor laser element 20A opposite to the light-emitting surface 22. In a top view, the virtual line L1 also passes through the marking region R1. The virtual line L1 may be a line parallel to the short side of the lower surface of the base 11M.

[0110] In the light-emitting device 1, a plurality of semiconductor laser elements 20 may be arranged in a second direction perpendicular to a first direction when viewed from above. The plurality of semiconductor laser elements 20 are positioned so that when viewed from above, a virtual straight line L2 passes through the midpoint of the width in the first direction of the lower surface of the base 11M and parallel to the second direction perpendicular to the first direction.

[0111] The multiple semiconductor laser elements 20 can be composed of three or more semiconductor laser elements 20 that are aligned in a second direction, and the first semiconductor laser element 20A is not one of the semiconductor laser elements 20 located at either end of the alignment. The first semiconductor laser element 20A is positioned between the semiconductor laser elements 20 at both ends.

[0112] With respect to the first direction, the midpoint of the width of the marking area R1 is not located between the ends of the first semiconductor laser element 20A when viewed from above. By arranging the marking area R1 in this way in relation to the position where the first semiconductor laser element 20A is positioned, the adverse effect of the marking 13B on the heat dissipation of heat generated from the first semiconductor laser element 20A, which is a heat source, can be reduced.

[0113] With respect to the first direction, the midpoint of the width of the lower surface of the base 11M lies between the two ends of the first semiconductor laser element 20A. By arranging the first semiconductor laser element 20A in this way, the heat generated from the first semiconductor laser element 20A can easily spread in the planar direction (XY plane direction) of the base 11M, thereby improving the heat dissipation of the first semiconductor laser element 20A. One of these two ends is on the light emission surface 22, and the other end is on the opposite side of the light emission surface.

[0114] In a top view, the marking area R1 partially overlaps with the first semiconductor laser element 20A. In a top view, a portion of the marking 13B may overlap with a portion of the first semiconductor laser element 20A. In a top view, the marking area R1 may overlap with at least a portion of the light-emitting surface 22 of the first semiconductor laser element 20A. By arranging the first semiconductor laser element 20A on the first top surface 11A in this positional relationship, a balance can be achieved between heat dissipation and miniaturization.

[0115] In other words, considering only the effect of the marking 13B on heat dissipation, it is preferable to position the marking 13B, which affects heat dissipation, in a location that does not overlap with one or more semiconductor laser elements 20 when viewed from above. On the other hand, if the marking region R1 is to be positioned in a location that does not overlap with the semiconductor laser elements 20 when viewed from above, the upper and lower surfaces of the base 11M may become larger. Allowing some overlap can be said to contribute to miniaturization of the light-emitting device 1.

[0116] In a top view, the area of ​​the first semiconductor laser element 20A that does not overlap with the marking area R1 is larger than the area that overlaps with the marking area R1. This condition is also met when the first semiconductor laser element 20A and the marking area R1 do not overlap in a top view. In a top view, the area of ​​the region where the first semiconductor laser element 20A and the marking area R1 overlap can also be said to be between 0% and 50% of the area of ​​the first semiconductor laser element 20A. By arranging the first semiconductor laser element 20A in this way, the adverse effect of the marking 13B on heat dissipation can be reduced.

[0117] Among the multiple semiconductor laser elements 20, there may be a second semiconductor laser element 20B that does not overlap with the marking region R1 at all when viewed from above. The second semiconductor laser element 20B may be a semiconductor laser element 20 located at either end of the multiple semiconductor laser elements 20 arranged in the second direction.

[0118] In the light-emitting device 1, one or more semiconductor laser elements 20 are arranged on the substrate 11 via one or more submounts 30. One or more semiconductor laser elements 20 are arranged on one or more submounts 30. One semiconductor laser element 20 may be arranged on one or each of the submounts 30.

[0119] Each of the submounts 30, when viewed from above, has a larger area than the semiconductor laser element 20 placed thereon. This improves heat dissipation because the heat emitted from the semiconductor laser element 20 is diffused by the submount 30 and transferred to the first upper surface 11A.

[0120] One or more submounts 30 include a first submount 30A on which a first semiconductor laser element 20A is positioned. In a top view, a virtual straight line L3 parallel to the first direction passes through the first submount 30A and the marking region R1. In a top view, the marking region R1 may partially overlap with the first submount 30A.

[0121] The light-emitting surface 22 of the semiconductor laser element 20 is located near the side surface 31C of the submount 30 when viewed from above. With respect to the first direction, the midpoint of the width of the first semiconductor laser element 20A is further away in the first direction than the midpoint of the width of the first submount 30A.

[0122] With respect to the second direction, the width of the marking area R1 is greater than the width of the first semiconductor laser element 20A. With respect to the second direction, the width of the marking area R1 is greater than the width of the first submount 30A. Visibility is improved by providing a marking 13B of a certain size. The width of the marking area R1 in the first direction may be greater than the width of the first submount 30A in the second direction.

[0123] One or more submounts 30 can consist of multiple submounts 30 arranged side by side in a second direction. In multiple submounts 30 arranged in a second direction, the spacing between adjacent submounts 30 in the second direction can be 260 μm or less. This allows many submounts 30 to be arranged side by side. Furthermore, this spacing is smaller than the width of the marking area R1 in the second direction. Also, the width of the marking area R1 in the second direction is greater than the sum of this spacing and the width of the first submount 30A in the second direction.

[0124] The virtual line L2 passes through multiple submounts 30 when viewed from above. The virtual line L2 has multiple line segments that overlap with the first top surface 11A but do not overlap with the submounts 30. These include line segments between adjacent submounts and line segments between a submount and the frame portion 11N. The width of the marking area R1 in the second direction is greater than any of these multiple line segments.

[0125] In the light-emitting device 1, one or more reflective members 40 are arranged in the internal space of the package 10. The one or more reflective members 40 are arranged on the substrate 11. The one or more reflective members 40 are arranged on the first upper surface 11A. The one or more reflective members 40 are arranged at a position a distance in a first direction from the one or more semiconductor laser elements 20.

[0126] Light emitted from one or more semiconductor laser elements 20 is reflected by one or more reflective members 40. The direction of light propagation is changed by the light-reflecting surface 41B of one or each of the reflective members 40. Light emitted from one or more semiconductor laser elements 20 is emitted upward from the top surface 14A of the package 10. In the illustrated light-emitting device 1, light traveling in the positive Y direction is reflected by the light-reflecting surface 41B and travels in the positive Z direction.

[0127] One or more reflective members 40 include a first reflective member 40A that reflects light emitted from the first semiconductor laser element 20A. The first reflective member 40A is positioned on the substrate 11 at a position a first distance away from the first semiconductor laser element 20A in a first direction. One or more reflective members 40 are positioned on the base 11M at a position a first distance away from the first semiconductor laser element 20A with respect to the first direction.

[0128] In a top view, with respect to the first direction, the distance from the first semiconductor laser element 20A to the first reflective member 40A is greater than the distance from the first semiconductor laser element 20A to the marking 13B. Here, the distance from the first semiconductor laser element 20A to the marking 13B may be considered as the distance from the first semiconductor laser element 20A to the marking region R1. Furthermore, if the first semiconductor laser element 20A and the marking region R1 overlap, the distance from the first semiconductor laser element 20A to the marking 13B can be considered zero.

[0129] In a top view, at least a portion of the first reflective member 40A overlaps with the marking region R1. In a top view, the area where the first reflective member 40A and the marking region R1 overlap is larger than the area where the first semiconductor laser element 20A and the marking region R1 overlap. In a top view, the area where the first reflective member 40A and the marking region R1 overlap is larger than the area where the first submount 30A and the marking region R1 overlap. In a top view, the entirety of the first reflective member 40A may overlap with the marking region R1.

[0130] The semiconductor laser element 20 or submount 30 has the role of transferring heat emitted from the semiconductor laser element 20 to the base 11M, and the base 11M has the role of dissipating heat to the outside of the package 10. Therefore, it is better for the heat dissipation of the light-emitting device 1 if the marking area R1 is located in a position that does not overlap with the first submount 30A as much as possible. When viewed from above, if a large portion of the marking area R1 overlaps with the first reflective member 40A, the area that can overlap with the first submount 30A will be reduced accordingly, and heat dissipation can be improved.

[0131] Considering only the relationship with the first semiconductor laser element 20A, it can be argued that it is preferable for the light-emitting surface 22, where the most heat is concentrated during operation, and the marking region R1 not to overlap when viewed from above. On the other hand, if the area overlapping with the first submount 30A increases in exchange for avoiding overlap with the light-emitting surface 22 when viewed from above, it is possible that the heat dissipation performance will deteriorate as a result. It is also possible that, even if the marking region R1 overlaps with the light-emitting surface 22 when viewed from above, it is desirable from an overall heat dissipation standpoint to avoid overlapping with the first submount 30A as much as possible. It should be noted that the factors to consider when balancing the overlap between the light-emitting surface 22 and the first submount 30A are not limited to the heat dissipation described here, and this balance may also be considered from other factors.

[0132] From the standpoint of heat dissipation, it is not essential that the reflective member 40 is positioned relative to the marking region R1; any optical element other than a semiconductor laser element will suffice. Therefore, in the light-emitting device 1, the reflective member 40 can be considered an example of an optical element. In other words, with the first semiconductor laser element 20A positioned on the base 11M, and the optical element positioned on the base 11M at a distance of first units in a first direction from the first semiconductor laser element 20A, the marking region R1 is positioned closer to the optical element than the semiconductor laser element 20 in the first direction, thereby improving heat dissipation from the heat generated by the first semiconductor laser element 20A. The optical element can be any element that provides an optical effect on the light emitted from the semiconductor laser element 20, and examples include lens elements, waveplates, and MEMS in addition to the reflective member 40. Furthermore, from the perspective of the performance of the light-emitting device 1 (e.g., optical output), it is preferable that the optical element here is less affected by thermal performance degradation than the semiconductor laser element 20.

[0133] In a top view, with respect to the first direction, the midpoint of the width of the marking area R1 is located at a position further away from the light-emitting surface 22 of the first semiconductor laser element 20A than the first distance. This midpoint is located between the ends of the first reflecting member 40A in the first direction. By arranging the first semiconductor laser element 20A in this positional relationship, the effect of reduced heat dissipation due to the marking 13B can be reduced, and the heat dissipation of the light-emitting device 1 can be improved.

[0134] In a top view, of the two outer surfaces 11D of the substrate 11 through which the virtual straight line L1 passes, the outer surface 11D on the reflective member 40 side is designated as the first outer surface 11D1, and the outer surface 11D on the semiconductor laser element side is designated as the second outer surface 11D2. With respect to the first direction, in a top view, the distance from the first outer surface 11D1 to the light-emitting surface 22 of the first semiconductor laser element is smaller than the distance from the second outer surface 11D2 to the light-emitting surface 22 of the first semiconductor laser element.

[0135] When considering the light-emitting surface 22, which is the point of heat generation, as the starting point, the second outer surface 11D2 side makes it easier to secure an area for placing the marking 13B and to keep it away from the light-emitting surface 22. However, the marking 13B is provided on the first outer surface 11D1 side so as not to interfere with heat dissipation from the semiconductor laser element 20 or submount 30 to the base 11M.

[0136] Furthermore, if a wide distance is secured between the first submount 30A and the second outer surface 11D2 when viewed from above, the marking 13B may be provided in this area. However, from the viewpoint of miniaturizing the light-emitting device 1, securing a wide distance in order to provide the marking 13B may be a disadvantage.

[0137] In the light-emitting device 1, one or more protective elements 50 are arranged in the internal space of the package 10. One or more protective elements 50 are arranged on the substrate 11. One or more protective elements 50 are arranged on the frame portion 11N. One or more protective elements 50 are arranged on the upper surface 11G of the stepped portion 11F. One or more protective elements 50 protect one or more semiconductor laser elements 20.

[0138] In the light-emitting device 1, multiple wirings 60 are used to electrically connect one or more semiconductor laser elements 20 to the package 10. The multiple wirings 60 electrically connect one or more semiconductor laser elements 20 to the wiring section 12A. The multiple wirings 60 include wirings 60 that connect to the inner wiring section 12A1. In the illustrated light-emitting device 1, one or more semiconductor laser elements 20 are electrically connected in series between the inner wiring section 12A1 provided in the first stepped section 11F1 and the inner wiring section 12A1 provided in the second stepped section 11F2.

[0139] In the light-emitting device 1, the optical element 70 is positioned above the package 10. The optical element 70 is bonded to the package 10. The upper surface 14A of the package 10 and the lower surface 71B of the optical element 70 are bonded together via an adhesive. For example, an ultraviolet-curing resin can be used as the adhesive.

[0140] Light emitted from package 10 is incident on optical element 70 and emitted from optical element 70. The light emitted from optical element 70 is light that has been incident on the optical surface 71D and subjected to optical action. For example, divergent light emitted from package 10 is incident on optical element 70, which is a lens element, passes through the lens surface 71D, which is the optical surface 71D, becomes collimated light and is emitted from optical element 70.

[0141] The light emitted from the optical element 70 becomes the light emitted from the light-emitting device 1. It should be noted that, in the illustrated light-emitting device 1, if, for example, the light-emitting device 1 does not include the optical element 70, the light emitted from the package 10 becomes the light emitted from the light-emitting device 1. In other words, the light emitted from the light-emitting device 1 can be identified in relation to the components of the light-emitting device 1.

[0142] (Wiring board 101) The wiring board 101 has a top surface 101A, a bottom surface 101B, and one or more sides. The wiring board 101 has a plate-like shape. In a top view, the outer edge shape of the wiring board 101 is rectangular. This rectangle can be a rectangle with a long side and a short side. In the illustrated package 10, the direction of the short side of this rectangle is the same as the X direction, and the direction of the long side is the same as the Y direction.

[0143] The wiring board 101 includes a heat dissipation section 101D, a wiring section 101E, and an insulating section 101F. The heat dissipation section 101D functions as a heat dissipation path for heat emitted from other components mounted on the wiring board 101. The wiring section 101E is electrically connected to the other components mounted on the wiring board 101.

[0144] The insulating section 101F insulates the heat dissipation section 101D from the wiring section 101E. In the wiring board 101, the heat dissipation section 101D and the wiring section 101E are not electrically connected. It may also be provided to protect a portion of the wiring section 101E from contact with other components.

[0145] Here, among the upper surface 101A of the wiring board 101, the region where the heat dissipation portion 101D is located at the highest point is defined as the upper surface 101A of the heat dissipation portion 101D, the region where the wiring portion 101E is located at the highest point is defined as the upper surface 101A of the wiring portion 101E, and the region where the insulating portion 101F is located at the highest point is defined as the upper surface 101A of the insulating portion 101F.

[0146] The wiring board 101 comprises a heat dissipation member 111, a plurality of conductive members 121, and one or more insulating members 131. The heat dissipation section 101D may be composed of the heat dissipation member 111. The wiring section 101E may be composed of a plurality of conductive members 121. The insulating section 101F may be composed of one or more insulating members 131.

[0147] The wiring board 101 is provided with one or more through holes 101H. These one or more through holes 101H include holes for fixing the wiring board 101 to other members (components). For example, screws are inserted into the through holes 101H to fix the wiring board 101 to other members. These one or more through holes 101H include holes 101H used to determine the position of the wiring board 101 when it is fixed to other members.

[0148] The heat dissipation member 111 has a first upper surface 111A. The heat dissipation member 111 has a second upper surface 111B located lower than the first upper surface 111A. The heat dissipation member 111 has a protrusion that extends from the second upper surface 111B, and the first upper surface 111A can be the upper surface of the protrusion. The height of the protrusion of the heat dissipation member 111 (height from the second upper surface 111B to the first upper surface 111A) is less than the height from the bottom surface of the heat dissipation member 111 to the second upper surface 111B.

[0149] One or more insulating members 131 are provided on the heat dissipation member 111. One or more insulating members 131 are provided on the second upper surface 111B. Multiple conductive members 121 are arranged on the second upper surface 111B via the insulating members 131. Multiple conductive members 121 are spaced apart from each other and are not electrically connected.

[0150] One or more insulating members 131 are provided between the heat dissipation member 111 and each conductive member 121. When viewed from above, one or more insulating members 131 are partially provided on top of the conductive members 121. The insulating members 131 make a single connected conductive member 121 appear to be divided into multiple regions. In this way, a wiring pattern is formed on the upper surface 101A of the wiring board 101.

[0151] The heat dissipation member 111 can use a metallic material as its main material. For example, elemental metals such as Cu, Ag, Al, Ni, Rh, Au, Ti, Pt, Pd, Mo, Cr, and W, or alloys containing these metals, can be used as the main material of the heat dissipation member 111. It is preferable that the heat dissipation member 111 be formed from a material with excellent heat dissipation properties. The heat dissipation member 111 may be formed containing 95% by mass or more of copper.

[0152] The conductive member 121 can use a metallic material as its main material. For example, elemental metals such as Cu, Ag, Al, Ni, Rh, Au, Ti, Pt, Pd, Mo, Cr, and W, or alloys containing these metals, can be used as the main material of the conductive member 121.

[0153] The insulating member 131 is formed of an insulating material. For example, polyimide can be used as the main material for the insulating member 131. Alternatively, the main material for the insulating member 131 can be glass epoxy, which is obtained by impregnating one or more sheets of glass cloth with a thermosetting insulating resin such as epoxy resin and curing the thermosetting insulating resin, or liquid crystal polymer. Multiple insulating members 131 formed from different main materials can be used to form the insulating portion 101F. For example, a film-like polyimide can be used as one of the insulating members 131, and a resist such as solder resist can be used as another insulating member 131.

[0154] (Connector 201) Connector 201 has a socket into which a connector cable is inserted.

[0155] (Thermistor 301) Thermistor 301 can be used as a temperature measuring element.

[0156] Next, we will describe the light-emitting module 901.

[0157] (Light-emitting module 901) In the light-emitting module 901, one or more light-emitting devices 1 are mounted on the wiring board 101. The one or more light-emitting devices 1 are positioned on the upper surface 101A of the wiring board 101. The lower surfaces 11B of the one or more light-emitting devices 1 are joined to the wiring board 101 via a bonding material. The bonding material can be an adhesive containing metal. For example, AuSn solder can be used as the bonding material.

[0158] The wiring section 12A (outer wiring section 12A2) of one or each light-emitting device 1 is electrically connected to the wiring section 101E of the wiring board 101. The lower surface of the base 11M of one or each light-emitting device 1 is joined to the heat dissipation section 101D of the wiring board 101 via a bonding material. This allows the heat accumulated in the base 11M to be released to the heat dissipation section 101D.

[0159] Thus, the wiring board 101 plays the role of a heat dissipation member that releases the heat generated by the light-emitting device 1. Furthermore, from the standpoint of heat dissipation, it is not essential that the wiring board 101 is a wiring board equipped with a wiring section 101E; any heat dissipation member equipped with a heat dissipation section 101D will suffice.

[0160] The area of ​​the lower surface of the base 11M that includes the marking area R1 is joined to the wiring board 101 via the bonding material. Substantially, the entire lower surface of the base 11M is joined to the heat dissipation section 101D via the bonding material.

[0161] Marking 13B is applied to the marking region R1, which can result in a clear difference in the bonding state of the bonding material between the region with and without marking 13B. For example, the application of marking 13B may relatively increase the rate of void formation per unit area. A higher rate of void formation negatively impacts heat dissipation.

[0162] In the light-emitting module 901, when viewed from above, the bonding material of the first portion P1, which overlaps with the marking region R1, may have a higher proportion of voids than the bonding material of the second portion P2, which does not overlap with the marking region R1 (proportion of voids in the first portion P1 > proportion of voids in the second portion P2). Therefore, considering the positional relationship between the semiconductor laser element 20, which generates heat during operation, and the marking region R1, which affects heat dissipation, arranging the semiconductor laser element 20 on the base 11M leads to improved heat dissipation from heat sources such as the semiconductor laser element.

[0163] In the light-emitting module 901, when viewed from above, a portion of the first part P1 of the bonding material overlaps with the insulating part 101F of the wiring board 101, and another portion overlaps with the heat dissipation part 101D. Compared to the case where the bonding material in the area overlapping with the marking area R1 is bonded only to the heat dissipation part 101D, the inclusion of the insulating part 101F in part can suppress the generation of large voids. In relation to the bonding material of the first part P1, the insulating part 101F relative to the heat dissipation part 101D can be said to be a processed part that suppresses the generation of large voids and improves heat dissipation.

[0164] In the light-emitting module 901, the light-emitting surface 22 of the first semiconductor laser element 20A does not overlap with the insulating portion 101F when viewed from above. Furthermore, the first semiconductor laser element 20A can be positioned so that it does not overlap with the insulating portion 101F when viewed from above. Overlapping most of the marking 13B directly beneath the first semiconductor laser element 20A is also preferable in relation to the insulating portion 101F (processed portion) of the wiring board 101.

[0165] In the light-emitting module 901, when viewed from above, the side surface 31C of the first submount 30A that faces the same direction as the light-emitting surface 22 of the first semiconductor laser element 20A does not overlap with the insulating portion 101F.

[0166] In the light-emitting module 901, the bonding material of the first part P1 and the bonding material of the second part P2 are bonded to the lower surface of the base 11M. The dominant factor influencing the difference in the void generation rate between the first part P1 and the second part P2 is the presence or absence of the marking 13B. For example, in the manufacturing process of the light-emitting module 901, the first part P1 and the second part P2 are not distinguished, and the bonding materials are not cured individually or different materials are not used.

[0167] In the light-emitting module 901, the same bonding material can be used for joining the outer wiring section 12A2 and the wiring section 101E, and for joining the base section 11M and the heat dissipation section 101D. Furthermore, these joining processes can be performed all at once.

[0168] One or more light-emitting devices 1 can consist of multiple light-emitting devices 1, including a first light-emitting device 1A and a second light-emitting device 1B. In the illustrated example of the light-emitting module 901, two light-emitting devices 1, the first light-emitting device 1A and the second light-emitting device 1B, are mounted on a wiring board 101. The two light-emitting devices 1 are arranged side by side in a first direction.

[0169] In the light-emitting module 901, the first light-emitting device 1A and the second light-emitting device 1B are arranged in the same orientation and mounted on the wiring board 101. Whether they are oriented in the same orientation can be determined by whether the relative positions of the marking area R1 on the lower surface of the base 11M are the same. Alternatively, whether they are oriented in the same orientation can be determined from the appearance of the light-emitting device 1 (for example, the relative position of the optical element 70 in the light-emitting device 1). Furthermore, whether they are oriented in the same orientation can be determined from the arrangement relationship between the semiconductor laser element 20 and the reflective member 40.

[0170] In the light-emitting device 1, the position of the marking area R1 is offset from the center of the lower surface 11B of the substrate 11 or the lower surface of the base portion 11M. As a result, the first portion P1, which may have inferior heat dissipation performance compared to the second portion P2, is also positioned offset from this center. For example, if the first light-emitting device 1A and the second light-emitting device 1B are placed facing each other with their reflective members 40 close together, their respective first portions P1 will be close together, potentially causing a synergistic decrease in heat dissipation performance. On the other hand, if the two light-emitting devices 1 are placed close together with their semiconductor laser elements 20 close together, the light emission positions from each light-emitting device 1 will be far apart.

[0171] Thus, when two light-emitting devices 1, each having a base 11M where the marking area R1 is offset from the center, are placed close together, arranging the two light-emitting devices 1 in the same orientation can contribute to improving the overall heat dissipation of the light-emitting module 901.

[0172] In the light-emitting module 901, the connector 201 is mounted on the wiring board 101. The connector 201 connects to the wiring section 101E and electrically connects to one or more light-emitting devices 1. This allows wiring connected to an external power supply to be connected to the connector, thereby supplying power to the light-emitting devices 1.

[0173] In the light-emitting module 901, a thermistor 301 is mounted on the wiring board 101. The thermistor 301 is positioned near one or more light-emitting devices 1. This allows the heat generation state of the light-emitting device 1 while the semiconductor laser element 20 is in operation to be determined based on the electrical signal from the thermistor 301.

[0174] The light-emitting module 901 may be manufactured by a manufacturing method that includes the steps of preparing a wiring board 101, preparing one or more light-emitting devices 1, and mounting one or more light-emitting devices 1 on the wiring board 101. The method may further include the steps of mounting a connector 201 on the wiring board 101 and mounting a thermistor 301 on the wiring board 101.

[0175] As can be understood from the description already given, the manufacturing method of the light-emitting device 1 is sufficient if it is manufactured by a method that includes at least the steps of preparing a base 11M with marking 13B and arranging one or more semiconductor laser elements 20, including the first semiconductor laser element 20A, on the base 11M. Furthermore, the light-emitting device 1 may also be manufactured by including the step of arranging optical elements such as a reflective member 40 on the base 11M. In addition, it is clear that the manufacturing method may include the steps of mounting other components of the light-emitting device 1.

[0176] The process of mounting one or more light-emitting devices 1 onto a wiring board 101 includes the step of joining one or more light-emitting devices 1 to the wiring board 101 via a bonding material. Furthermore, it may include the step of obtaining management information from markings 13B applied to one or each of the light-emitting devices 1.

[0177] The process of acquiring management information from the markings 13B applied to one or more light-emitting devices 1 is performed in the process of preparing one or more light-emitting devices 1, or in the process of mounting one or more light-emitting devices 1 on a wiring board 101. The management information acquired in this process can be used, for example, to manage the manufacturing process of the light-emitting module 901. It can also be used, for example, to manage the quantity of the light-emitting module 901. How the management information is used can be decided as appropriate by the manufacturer.

[0178] Although various embodiments of the present invention have been described above, the light-emitting module according to the present invention is not strictly limited to the light-emitting module of each embodiment. In other words, the present invention is not limited to the external shape and structure of the light-emitting module disclosed in each embodiment. The present invention can be applied without requiring all components to be present. For example, if some of the components of the light-emitting module disclosed in the embodiment are not described in the claims, a degree of design freedom for those skilled in the art is permitted for those components, such as substitution, omission, modification of shape, or change of material, and the invention described in the claims is then specified to be applicable.

[0179] Through the information described herein so far, the following technical matters are disclosed: (Section 1) A base having an upper surface and a lower surface, with a marking provided in a marking area which is a part of the lower surface, One or more semiconductor laser elements, including a first semiconductor laser element disposed on the upper surface of the base and emitting light in a first direction from the light emission point of the light emission surface, A heat dissipation substrate having a heat dissipation portion that is joined to the lower surface of the base via a bonding material, Equipped with, The area of ​​the lower surface including the marking area is joined to the heat dissipation substrate via the bonding material. With respect to the first direction, the midpoint of the width of the marking area is not located between the two ends of the first semiconductor laser element when viewed from above. A light-emitting module in which, when viewed from above, a first virtual straight line parallel to the first direction passes through the marking area and the first semiconductor laser element. (Section 2) With respect to the first direction, the midpoint of the width of the marking area does not coincide with the midpoint of the width of the lower surface of the base, as described in item 1, the light-emitting module. (Section 3) With respect to the first direction, the light-emitting module according to item 1 or 2, wherein the midpoint of the width of the lower surface of the base is located between the ends of the first semiconductor laser element. (Section 4) The light-emitting module according to item 3, wherein one of the two ends of the first semiconductor laser element is on the light-emitting surface and the other end is on the surface opposite to the light-emitting surface. (Section 5) The light-emitting module according to any one of items 1 to 4, wherein the marking area partially overlaps with the first semiconductor laser element when viewed from above. (Section 6) In a top view, the area of ​​the first semiconductor laser element that does not overlap with the marking area is larger than the area that overlaps with the marking area, as described in any one of claims 1 to 5. (Section 7) The one or more semiconductor laser elements are composed of a plurality of semiconductor laser elements arranged in a position where, in a top view, a second virtual line passes through the midpoint of the width of the lower surface of the base in the first direction and is parallel to the second direction perpendicular to the first direction. The light-emitting module according to item 5, wherein among the plurality of semiconductor laser elements, there is a second semiconductor laser element that does not overlap with the marking area at all when viewed from above. (Section 8) The light-emitting module according to any one of claims 1 to 7, wherein, with respect to a second direction perpendicular to the first direction in a top view, the width of the marking area is greater than the width of the first semiconductor laser element. (Section 9) The present invention further comprises one or more optical members disposed on the base at a position a first distance away from the first semiconductor laser element with respect to the first direction, and to which light emitted from the plurality of semiconductor laser elements is incident, The light-emitting module according to any one of claims 1 to 8, wherein, in a top view, with respect to the first direction, the midpoint of the width of the marking area is located further away from the light-emitting surface than the first distance. (Section 10) A light-emitting module according to any one of items 1 to 9, wherein, in a top view, the bonding material in the first portion overlapping with the marking area has a higher void generation rate than the bonding material in the second portion not overlapping with the marking area. (Section 11) The process of preparing the heat dissipation substrate, The process of preparing a light-emitting device comprising: preparing a light-emitting device having an upper surface and a lower surface, and a marking applied to a marking area which is a part of the lower surface, and arranging a first semiconductor laser element on the upper surface of the base such that light is emitted in a first direction from the light-emitting point of the light-emitting surface; A step of obtaining management information from the aforementioned marking, A step of joining the base to the heat dissipation substrate such that the area of ​​the lower surface including the marking area is joined to the heat dissipation substrate via a bonding material, Includes, A method for manufacturing a light-emitting module, wherein, in the step of arranging the first semiconductor laser element, the first semiconductor laser element is arranged on the upper surface of the base such that, in a top view, with respect to the first direction, the midpoint of the width of the marking area is not located between the ends of the first semiconductor laser element, and in a top view, a first virtual straight line parallel to the first direction passes through the marking area and the first semiconductor laser element. [Industrial applicability]

[0180] The light-emitting module described in the embodiment can be used in a projector. In other words, a projector is one application to which the present invention is applicable. However, the present invention is not limited to this and can be used in various applications such as lighting, exposure, in-vehicle headlights, head-mounted displays, and backlights for other displays. [Explanation of symbols]

[0181] 1. Light-emitting device 1A First light-emitting device 1B Second light-emitting device 10 packages 11 Base 11A 1st top surface 11B Bottom side 11C 2nd top surface 11D External surface 11D1 1st outer surface 11D2 2nd outer surface 11E Inside surface 11th floor step section 11F1 First step section 11F2 Second step section 11G top surface 11H side 11M base 11N frame 12A wiring section 12A1 Inside wiring section 12A2 Outside wiring section 13A Joint Pattern 13B Marking 14 Lid 14A Top 14B Bottom 14C side 20 Semiconductor laser elements 20A First Semiconductor Laser Element 20B Second Semiconductor Laser Element 21A Top 21B Bottom side 21C side 22 Light exit surface 30 Submount 30A First Submount 31A Top 31B Bottom surface 31C side 32A circuit board 32B Upper metal member 32C Lower metal component 33 Wiring layer 40 Reflective material 40A First reflective member 41A Bottom 41B Light reflective surface 50 protective elements 60 Wiring 70 Optical components (lens components) 71A Top 71B Bottom side 71C side 71D Lens surface (optical surface) 72A Lens section 72B Non-lens section 101 Wiring board 101A Top 101B Bottom surface 101D Heat dissipation part 101E Wiring section 101F Insulation 101H Through hole 111 Heat dissipation component 111A 1st top surface 111B 2nd top surface 111E Bottom side 121 Conductive material 122A Top 131 Insulating material 201 Connector 301 Thermistor 901 Light-emitting module

Claims

1. A base having an upper surface and a lower surface, with a marking provided in a marking area which is a part of the lower surface, One or more semiconductor laser elements, including a first semiconductor laser element disposed on the upper surface of the base and emitting light in a first direction from the light emission point of the light emission surface, A heat dissipation substrate having a heat dissipation portion that is joined to the lower surface of the base via a bonding material, Equipped with, The area of ​​the lower surface including the marking area is joined to the heat dissipation substrate via the bonding material. With respect to the first direction, the midpoint of the width of the marking area is not located between the two ends of the first semiconductor laser element when viewed from above. A light-emitting module in which, when viewed from above, a first virtual straight line parallel to the first direction passes through the marking area and the first semiconductor laser element.

2. With respect to the first direction, the midpoint of the width of the marking area does not coincide with the midpoint of the width of the lower surface of the base, as described in claim 1.

3. With respect to the first direction, the midpoint of the width of the lower surface of the base is located between the ends of the first semiconductor laser element, as described in claim 1.

4. The light-emitting module according to claim 3, wherein one of the two ends of the first semiconductor laser element is on the light-emitting surface and the other end is on the surface opposite to the light-emitting surface.

5. The light-emitting module according to claim 1, wherein the marking area partially overlaps with the first semiconductor laser element when viewed from above.

6. In a top view, the area of ​​the first semiconductor laser element that does not overlap with the marking area is larger than the area that overlaps with the marking area, as described in claim 1 or 5.

7. The one or more semiconductor laser elements are composed of a plurality of semiconductor laser elements arranged in a position where, in a top view, a second virtual line passes through the midpoint of the width of the lower surface of the base in the first direction and is parallel to the second direction perpendicular to the first direction. The light-emitting module according to claim 5, wherein among the plurality of semiconductor laser elements, there is a second semiconductor laser element that does not overlap with the marking region at all when viewed from above.

8. The light-emitting module according to claim 1, wherein, with respect to a second direction perpendicular to the first direction in a top view, the width of the marking area is greater than the width of the first semiconductor laser element.

9. The present invention further comprises one or more optical members disposed on the base at a position a first distance away from the first semiconductor laser element with respect to the first direction, to which light emitted from the plurality of semiconductor laser elements is incident, The light-emitting module according to claim 1, wherein, in a top view, with respect to the first direction, the midpoint of the width of the marking area is located at a position further away from the light-emitting surface than the first distance.

10. The light-emitting module according to claim 1, wherein, in a top view, the bonding material in the first portion overlapping with the marking area has a higher void generation rate than the bonding material in the second portion not overlapping with the marking area.

11. The process of preparing the heat dissipation substrate, A light-emitting device is prepared by arranging a first semiconductor laser element on the upper surface of a base having an upper surface and a lower surface, the base having a marking area which is a part of the lower surface, such that light is emitted in a first direction from the light-emitting point of the light-emitting surface. A step of obtaining management information from the aforementioned marking, A step of joining the base to the heat dissipation substrate such that the area including the marking area on the lower surface is joined to the heat dissipation substrate via a bonding material, Includes, A method for manufacturing a light-emitting module, wherein, in the step of arranging the first semiconductor laser element, the first semiconductor laser element is arranged on the upper surface of the base such that, in a top view, with respect to the first direction, the midpoint of the width of the marking area is not located between the ends of the first semiconductor laser element, and in a top view, a first virtual straight line parallel to the first direction passes through the marking area and the first semiconductor laser element.

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