Tombstone construction system and method

Abstract

Provide an exit passage. [Solution] The exit passage comprises a first part having a first diameter and a second part having a second diameter, wherein the first diameter is approximately 1 to approximately 3 times the second diameter, and a transitional part having a chamfered portion positioned between the first part and the second part and positioned at an angle of approximately 20 to approximately 35 degrees from the outer wall of the second part.

Description

TECHNICAL FIELD

[0001] The present disclosure relates generally to gas flow systems and components thereof. More specifically, the present disclosure relates to systems and methods for effective precursor gas flow.

BACKGROUND ART

[0002] Vapor phase reactors can be used in a variety of applications, such as chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), atomic layer deposition (ALD), plasma-enhanced ALD (PEALD), atomic layer etching (ALE), substrate pre-treatment, and etching processes. For example, vapor phase reactors can be used to deposit, etch, and / or clean material layers on substrates to form electronic devices, such as semiconductor devices, flat panel display devices, photovoltaic devices, micro-electro-mechanical systems (MEMS), and the like.

[0003] A typical vapor phase reactor system includes one or more reactors, each reactor including a reaction chamber and one or more gas sources fluidly coupled to the reaction chamber. In many applications, such as ALD, PEALD, and other periodic processes, precursor gases flow through various components and passages. Variations in precursor gas flow characteristics tend to cause condensation and / or deposition of precursor material, which is typically undesirable.

[0004] All discussions, including the discussion of problems and solutions described in this section, are included in this disclosure solely for the purpose of providing context for the present disclosure. Such discussion is not to be construed as an admission that any or all of the information was known at the time the invention was made or otherwise constitutes prior art.

SUMMARY OF THE INVENTION

MEANS FOR SOLVING THE PROBLEMS

[0005] Various embodiments of the present disclosure relate to an exit passage comprising a first portion having a first diameter and a second portion having a second diameter, wherein the first diameter is about 1 to about 3 times the second diameter, and the transition portion is located between the first portion and the second portion, and the transition portion has a chamfered portion located at an angle of about 20 to about 35 degrees from the outer wall of the second portion.

[0006] In various embodiments, the length of the transition portion is approximately 1 to 3 times the second diameter.

[0007] In various embodiments, the exit passage is formed within a monolithic block.

[0008] In various embodiments, the outlet passage further comprises a gasket that at least partially encloses the outlet passage.

[0009] In various embodiments, the chamfered portion extends around the transition portion.

[0010] In various embodiments, the chamfered portion is frustoconical in shape.

[0011] In various embodiments, the angle is between 20° and 30°.

[0012] In various embodiments, the first diameter is about 1.5 to about 2 times the second diameter.

[0013] In various embodiments, a gas flow system is provided in which an internal passage is disposed therein, the gas flow system comprising a first portion of the internal passage, a second portion of the internal passage, and a transition portion disposed between the first portion and the second portion, the transition portion being in fluid communication with the first portion and the second portion, the first portion having a first diameter, the second portion having a second diameter, and the first diameter being approximately 1 to approximately 3 times the second diameter.

[0014] In various embodiments, the transition portion includes a chamfered portion positioned at an angle of approximately 20 to 35 degrees from the outer wall of the second portion.

[0015] In various embodiments, the length of the transition portion is approximately 1 to 3 times the second diameter.

[0016] In various embodiments, the tombstone block is monolithic.

[0017] In various embodiments, the gas flow system further comprises a gasket that at least partially encloses the internal passage.

[0018] In various embodiments, the chamfered portion extends around the transition portion.

[0019] In various embodiments, the chamfered portion is frustoconical in shape.

[0020] In various embodiments, the angle is between 20° and 30°.

[0021] In various embodiments, the first diameter is about 1.5 to about 2 times the second diameter.

[0022] In various embodiments, methods are provided, which include drilling a first portion of an internal passage within a monolithic block; drilling a transitional portion of the internal passage within the monolithic block, wherein the drilling is performed at an angle with respect to the axial center of the transitional portion such that a chamfered portion is formed; and drilling a second portion of an internal passage within the monolithic block, wherein the second portion is in fluid communication with the transitional portion and the first portion, the first portion having a first diameter, and the second portion having a second diameter, the first diameter being approximately 1 to approximately 3 times the second diameter.

[0023] In various embodiments, the angle is between approximately 20 and 35 degrees from the outer wall of the second part.

[0024] In various embodiments, the length of the transition portion is approximately 1 to 3 times the second diameter.

[0025] In various embodiments, the length of the transition portion is about 1 to about 3 times the second diameter.

[0026] Those skilled in the art will readily appreciate these and other embodiments from the following detailed description of certain specific embodiments, with reference to the accompanying drawings. The present invention is not limited to any particular embodiment(s) disclosed.

[0027] A more complete understanding of the exemplary embodiments of the present disclosure can be obtained by referring to the "Detailed Description" and the "Claims", when considered in conjunction with the following illustrative drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] [Figure 1] Illustrates a gas flow system in accordance with various embodiments of the present disclosure. [Figure 2] Illustrates a gas flow system structure in accordance with various embodiments of the present disclosure. [Figure 3] Illustrates a reactor system in accordance with various embodiments of the present disclosure.

[0029] It is understood that elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some of the elements in the drawings may be exaggerated relative to other elements to help improve understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION OF EMBODIMENTS

[0030] Although certain specific embodiments and examples are disclosed below, it is understood that the present invention extends beyond the specifically disclosed embodiments and / or uses of the invention, and obvious modifications and equivalents thereof. Accordingly, the scope of the invention disclosed herein is not limited by the specific embodiments disclosed hereinafter.

[0031] This disclosure generally relates to systems and methods for administration during gas-phase reaction processes, such as atomic layer deposition (ALD) processes or other periodic deposition processes, but in various embodiments, usefulness may be found in several processes, including CVD, plasma enhancement processes, etching processes, cleaning processes, and the like.

[0032] As used herein, the term "substrate" may refer to any one or more underlying materials, including a depositable material and / or a material that can be deposited thereon. A substrate may include a bulk material such as silicon (e.g., single-crystal silicon), another Group IV material such as germanium, or a compound semiconductor material such as GaAs, and may also include one or more layers on or beneath the bulk material. For example, a substrate may include a patterned stack of several layers on top of a bulk material. The patterned stack may be modified according to the application. Furthermore, a substrate may include various gaps formed on the surface of the substrate, such as depressions, vias, spaces between lines, trenches, and the like.

[0033] In this disclosure, the gas may include materials that are gaseous at room temperature and atmospheric pressure (NTP), vaporized solids, and / or vaporized liquids, and may, depending on the situation, consist of a single gas or a mixture of gases. Gases other than the process gas, i.e., gases introduced without passing through a gas distribution assembly, other gas distribution devices, or similar, can be used, for example, to seal the reaction space and may include sealing gases such as noble gases. In this regard, chemically inert gases may flow through the reaction chamber together with the process gas, i.e., the precursor-containing gas. As used herein, “inert gas” may refer to a chemically inert gas such as a noble gas, or a relatively inert gas such as nitrogen gas (N2).

[0034] In this disclosure, any two numbers of the variables may constitute a practicable range of the variable, and any range shown may include or exclude endpoints. Furthermore, in various embodiments, any value of a shown variable (whether shown as approximately) may refer to an exact value, an approximation, an equivalent, a mean, median, representative value, or mode, or similar. For example, the term approximately may refer to ±20, 10, 5, 2, or 1 percent of a value. Furthermore, in this disclosure, “includes,” “composed of,” and “has,” and their equivalents may, in some embodiments, independently refer to “typically or broadly include,” “essentially consist of,” or “consist of.” In aspects of this disclosure, any defined meaning of a term does not necessarily exclude its ordinary and customary meanings.

[0035] Referring here to the drawings, Figure 1 shows a gas flow system 100 according to at least one embodiment of the present disclosure. The gas flow system 100 includes a tombstone structure 102 and a base block 101. In various embodiments, the tombstone 102 and the base block 101 are monolithic. The base block 101 includes a passage configured therein to provide fluid communication between the base block 101 and the tombstone 102. The lower base inlet 103 of the base block 101 includes a passage located within the base block 101. The central base inlet 105 of the base block 101 includes a passage located within the base block 101. The upper base outlet 107 of the base block 101 includes a passage located within the base block 101. Each of the lower base inlet 103, the central base inlet 105, and the upper base outlet 107 may be formed in the base block 101 by drilling, machining, milling, boring, electrical discharge machining, or other methods. In various embodiments, each of the base lower inlet 103, base central inlet 105, and base upper outlet 107 is formed during the additive manufacturing of the tombstone 102 and / or base block 101.

[0036] The tombstone 102 includes a passage configured to provide fluid communication between the base block 101 and the tombstone 102. The lower inlet 104 of the tombstone 102 includes a passage located within the tombstone 102. The central inlet 106 of the tombstone 102 includes a passage located within the tombstone 102. The upper outlet 108 of the tombstone 102 includes a passage located within the tombstone 102. Each of the lower inlet 104, the central inlet 106, and the upper outlet 108 may be formed in the tombstone 102 by drilling, machining, milling, boring, electrical discharge machining, or other means. The upper outlet 108 and the base upper outlet 107 form an outlet passage, and the terms passage and route are used interchangeably herein.

[0037] The tombstone 102 and base block 101 may be configured for use with a reaction vessel configured as a CVD reactor, a periodic deposition process reactor (e.g., a periodic CVD reactor), an ALD reactor, a PEALD reactor, a washing chamber, or similar, any of which may include plasma devices such as direct plasma devices and / or remote plasma devices. The reaction vessel may be formed from a suitable material such as quartz, metal, or similar, and may be configured to hold one or more substrates for processing.

[0038] The precursor gas source and the exhaust gas system may be in fluid communication with the base block 101. The precursor gas, as used herein, consists of a precursor material in a gaseous or substantially gaseous state. Various materials, such as carbon, hydrogen, and metals such as molybdenum, may be present in the gas phase of the precursor gas. The precursor gas may flow through the base block 101 into the lower inlet 104 and the central inlet 106. The exhaust flow may be drawn out through the upper outlet 108 and the return section 114. Various precursors are at risk of ceasing to be in a gaseous state due to changes in temperature and / or pressure. Thus, condensation and / or deposition of the precursor material may form within the tombstone 102 and / or the base block 101. Such condensation and / or deposition of the precursor material tends to form in regions where changes in fluid flow move through transition zones of varying volume and internal features. In such regions, the flow characteristics may tend to produce turbulence and / or promote recirculation. According to various embodiments, such tendencies for condensation and / or deposition are reduced and / or eliminated.

[0039] Referring to Figure 2, the transition portion 110 of the upper outlet 108 is shown to be in fluid communication with the return portion 114. The return portion 114 is cylindrical, or substantially cylindrical, with a constant diameter D2. The diameter of the transition portion increases as it moves axially toward the upper outlet 108. Thus, in cross-section, the transition portion 110 may be frustoconical. In this regard, the transition portion 110 may be referred to as a chamfer or chamfered portion. The chamfered portion may extend along the periphery of the transition portion 110. However, in cross-section, the transition portion 110 may take the form of an additional geometric shape. The angle between the wall of the return portion 114 and the wall of the transition portion is angle q.

[0040] The angle q is important to the fluid dynamics of the fluid in the gas flow system 100 in various embodiments. If the angle q is too large, the flow characteristics may change and may lead to undesirable condensation and / or deposition. If the angle q is too small, it may affect the package sizing and other variables. In various embodiments, the angle q is 105° to 125° and / or 110° to 120°. That is, in various embodiments, the angle q measured from the line parallel to D2 to the transition portion 112 is 15° to 35° and / or 20° to 30°. Angle q in this range tends to reduce turbulence in the flow, tends to avoid subsequent recirculation, and tends to improve the flow characteristics so that it is laminar rather than if the angle q value is outside this range.

[0041] Another factor that enhances flow characteristics is the ratio of D1 to D2. D1 is shown as the diameter of the upper outlet 108 and represents the region adjacent to the transition from the tombstone 102 to the base block 101. D2 is shown as the diameter of the return section 114. As the exhaust flow 124 moves into the transition section through the cross-sectional area encompassed by D1, the cross-sectional volume decreases, affecting the flow characteristics. In various embodiments, the ratio of D1 to D2 is 3:1 to 1.1:1 and / or 2.5:1 to 1.25:1 and / or 2:1 to 1.5:1. Within these ranges, the ratio of D1 to D2 tends to reduce turbulence and subsequent recirculation.

[0042] The axial length of the transition section 110 can vary in response to the value of angle q. In this manner, larger values ​​of angle q tend to increase the axial length of the transition section 110, while smaller values ​​of angle q tend to decrease the axial length of the transition section 110. Furthermore, in various embodiments, the axial length of the transition section is related to the diameter D2. In various embodiments, the ratio of the axial length of the transition section to the diameter D2 is 4:1 to 1:1 and / or 2.5:1 to 1.5:1 and / or 2:1 to 3:1. Within these ranges, the ratio of the axial length of the transition section to the diameter D2 tends to reduce turbulence and subsequent recirculation.

[0043] The gas flow system 100 can be constructed using any preferred method. For example, the manufacturing method may include drilling a first portion of an internal passage within a monolithic block, drilling a transition portion of the internal passage within the monolithic block, wherein the drilling is performed at an angle with respect to the axial center of the transition portion such that a chamfer is formed, and drilling a second portion of the internal passage within the monolithic block, wherein the second portion is in fluid communication with the transition portion and the first portion, the first portion has a first diameter, and the second portion has a second diameter, the first diameter being about 1 to about 3 times the second diameter.

[0044] Referring here to Figure 3, the gas flow systems disclosed herein may be used in connection with various reactor systems, for example, an exemplary reactor system 300. The reactor system 300 includes a reaction chamber 304, a susceptor 306 for holding a substrate 330 during processing, a gas distribution system 308 (e.g., a showerhead) for distributing one or more block molecules, precursors, and / or reactants onto the surface of the substrate 330, one or more block molecule, precursor, or reactant sources 310, 312, and / or 313, and / or carrier gas and / or purge gas source 314, which are fluidly coupled to the reaction chamber 304 via their respective lines 316, 318, 319, and 320, and their respective valves, or controllers 322, 323, 325, and 327. The substrate 330 may include the substrates or structures described herein. The purge / carrier gas 324 from the purge gas source 314 flows into and through the reaction chamber 304, acting as a carrier gas and / or purging or removing any excess block molecules, precursors, reactants, or other undesirable materials from the reaction chamber 304. The feed sources 310, 312, and 313 may include the containers and block molecules, precursors, or reactants described herein. For example, feed source 310 may include a container and block molecules 315, feed source 312 may include a container and precursors 317, and feed source 313 may include a container and reactants 321. The reactor system 300 may include additional feed sources. The system 300 may also include a vacuum source 328 fluidly coupled to the reaction chamber 304. The vacuum source 328 may be configured to discharge block molecules, precursors, reactants, purge gases, byproducts, or other materials from the reaction chamber 304.

[0045] The reactor system 300 may also include a controller 352. The controller 352 may be configured to perform a variety of functions and / or processes as described herein. The controller 352 may include one or more microprocessors, memory elements, and / or switching elements to perform a variety of functions. Although the controller 352 is shown as a single unit, it may alternatively include multiple devices. The controller 352 may be used to perform a variety of processes by controlling the gas flow (e.g., by monitoring the flow rate and controlling valves 322, 323, 325, and / or 327), as well as by controlling motors, heaters, coolers, and / or vacuum sources 328. Furthermore, if the system includes two or more reaction chambers, the two or more reaction chambers may be coupled to the same / shared controller.

[0046] As stated above, the exemplary embodiments of this disclosure described herein are merely examples of embodiments of the invention and do not limit the scope of the invention. In fact, various modifications of this disclosure, in addition to those shown and described herein, such as alternative useful combinations of the elements described herein, may be apparent to those skilled in the art from the description. Such modifications and embodiments are also included within the scope of the appended claims.

Claims

1. A tombstone block having an internal passage, The first part of the internal passage, The second part of the internal passage, A transition portion is provided between the first portion and the second portion, The transition portion is in fluid communication with the first portion and the second portion. A tombstone block in which the first portion has a first diameter, the second portion has a second diameter, and the first diameter is 1 to 3 times the second diameter.

2. The tombstone block according to claim 1, wherein the transition portion includes a chamfered portion positioned at an angle of 20 to 35 degrees from the outer wall of the second portion.

3. The tombstone block according to claim 2, wherein the length of the transition portion is 1 to 3 times the second diameter.

4. The tombstone block according to claim 3, wherein the tombstone block is monolithic.

5. The tombstone block according to claim 4, further comprising a gasket that at least partially encloses the internal passage.

6. The tombstone block according to claim 5, wherein the chamfered portion extends around the transition portion.

7. The tombstone block according to claim 6, wherein the chamfered portion is frustoconical in shape.

8. The tombstone block according to claim 7, wherein the angle is 20° to 30°.

9. The tombstone block according to claim 8, wherein the first diameter is 1.5 to 2 times the second diameter.

10. An exit passage comprising a first portion having a first diameter, a second portion having a second diameter, and a transition portion disposed between the first portion and the second portion, The first diameter is 1 to 3 times the second diameter. An exit passage having a chamfered portion, the transition portion being positioned at an angle of 20 to 35 degrees from the outer wall of the second portion.

11. The exit passage according to claim 10, wherein the length of the transition portion is 1 to 3 times the second diameter.

12. The exit passage according to claim 11, wherein the exit passage is formed within a monolithic block.

13. The outlet passage according to claim 12, further comprising a gasket that at least partially surrounds the outlet passage.

14. The exit passage according to claim 12, wherein the chamfered portion extends around the transition portion.

15. The exit passage according to claim 14, wherein the chamfered portion is frustoconical.

16. The exit passage according to claim 13, wherein the angle is 20° to 30°.

17. The exit passage according to claim 13, wherein the first diameter is 1.5 to 2 times the second diameter.

18. Drilling the first part of the internal passage into the monolithic tombstone block, The process involves drilling the transition portion of the internal passage within the monolithic tombstone block, wherein the drilling is performed at a certain angle with respect to the axial center of the transition portion so as to form a chamfered portion. A method comprising drilling a second portion of the internal passage within the monolithic tombstone block, wherein the second portion is in fluid communication with the transition portion and the first portion, the first portion has a first diameter, the second portion has a second diameter, and the first diameter is 1 to 3 times the second diameter.

19. The method according to claim 18, wherein the angle is 20 to 35 degrees from the outer wall of the second portion.

20. The method according to claim 19, wherein the length of the transition portion is 1 to 3 times the second diameter.

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