RF reference measurement circuit for a direct drive system that supplies power to generate plasma in a substrate processing system.

Abstract

The substrate processing system includes a drive circuit, an RF reference measurement circuit, and a makebreak connector. The drive circuit generates an RF drive signal at a first RF frequency. The RF reference measurement circuit includes an LC circuit having input impedance and output impedance. The output of the LC circuit is connected to an RF power meter and a dummy load. The makebreak connector connects the drive circuit to one of the processing chamber loads, which includes the RF reference measurement circuit and components of the substrate processing system. The output impedance of the drive circuit is matched to the input impedance of the LC circuit. The output impedance of the drive circuit is not matched to the impedance of the RF power meter and the dummy load. The LC circuit matches the impedance of the drive circuit to the RF power meter and the dummy load.

Description

TECHNICAL FIELD

[0001] Cross-Reference to Related Applications This application claims the benefit of priority of U.S. Provisional Patent Application No. 62 / 991,960, filed on March 19, 2020. The entire disclosure of the aforementioned related application is incorporated herein by reference in its entirety.

[0002] The present disclosure relates to substrate processing systems, and more specifically, to a radio frequency (RF) reference measurement circuit for measuring an RF reference generated by a direct drive system that supplies RF power to the substrate processing system.

BACKGROUND ART

[0003] The description of the background art provided herein is intended to generally present the content of the present disclosure. The work of the inventors named in this section, to the extent described in this Background Art section, as well as aspects of the description that may not be regarded as prior art at the time of filing, is neither expressly nor implicitly admitted as prior art against the present disclosure.

[0004] Substrate processing systems are generally used to etch thin films on substrates such as semiconductor wafers. Etching typically includes either wet chemical etching or dry etching. Dry etching may be performed using plasma generated by inductively coupled plasma (ICP). A magnetic field is generated by one or more inductive coils arranged adjacent to a dielectric window outside the processing chamber. Process gas flowing in the processing chamber is ignited by the magnetic field to generate plasma. In some applications, RF bias power may also be supplied to electrodes within the substrate support.

[0005] The frequency of RF plasma power or RF bias power can be varied to provide additional process control. Furthermore, the magnitude or level of RF plasma power or RF bias power can be varied during processing to provide additional process control. Changes in RF plasma power or level and / or RF bias power or level can result in impedance changes observed in the drive circuit. Impedance mismatch between the load and the drive circuit can lead to power reflection and inefficiency. [Overview of the project]

[0006] The substrate processing system comprises a drive circuit, an RF reference measurement circuit, and a makebreak connector. The drive circuit is configured to generate an RF drive signal at a first RF frequency. The RF reference measurement circuit includes an LC circuit having an input impedance and an output impedance. The output of the LC circuit is configured to connect to an RF power meter and a dummy load. The makebreak connector is configured to connect the drive circuit to one of the processing chamber loads, which includes the RF reference measurement circuit and components of the substrate processing system. The output impedance of the drive circuit is matched to the input impedance of the LC circuit. The output impedance of the drive circuit is not matched to the impedances of the RF power meter and the dummy load. The LC circuit is configured to match the impedance of the drive circuit to the RF power meter and the dummy load.

[0007] In other features, the RF reference measurement circuit includes a first conductor connected to the output of the LC circuit, and the RF power meter is connected to the first conductor.

[0008] In other features, the RF reference measurement circuit includes a second conductor connected to the output of the RF power meter, and a dummy load is connected to the second conductor.

[0009] Other features include the output impedance of the drive circuit and the input impedance of the LC circuit, which are in the range of 0.1Ω to 10Ω.

[0010] Other features include the output impedance of the drive circuit and the input impedance of the LC circuit, which are in the range of 0.5Ω to 2Ω.

[0011] Other features include the output impedance of the LC circuit and the impedances of the RF power meter, dummy load, first conductor, and second conductor, which are in the range of 20Ω to 100Ω.

[0012] Other features include the output impedance of the LC circuit and the impedances of the RF power meter, dummy load, first conductor, and second conductor, which are in the range of 45Ω to 55Ω.

[0013] Other features include the LC circuit comprising a first connector connected to a makebreak connector, an inductor with one end connected to the first connector, a first capacitor connected in series to the opposite end of the inductor, and a second capacitor connected in parallel between the opposite end of the inductor and the first capacitor.

[0014] In other features, the first capacitor includes one or more ceramic capacitors having a first terminal connected to the second capacitor and a second terminal connected to the second connector.

[0015] Another feature is that the second conductor includes a coaxial cable.

[0016] In another feature, the second capacitor includes one or more vacuum capacitors.

[0017] Other characteristics include an input impedance of LC circuits ranging from 0.5Ω to 2Ω, and an output impedance of LC circuits ranging from 45Ω to 55Ω.

[0018] Another characteristic is that the first RF frequency is in the range of 1.8 MHz to 2.2 MHz.

[0019] Other features include the LC circuit comprising a first connector connected to a makebreak connector, an inductor with one end connected to the first connector, a first capacitor connected in series to the opposite end of the inductor, and a second capacitor connected in parallel to the opposite end of the first capacitor.

[0020] In another feature, the first capacitor and the second capacitor include one or more vacuum capacitors.

[0021] Another characteristic is that the first RF frequency is in the range of 12.35 MHz to 13.65 MHz.

[0022] In other features, the makebreak connector includes a bracket, a first conductor extending from one side of the bracket, a second conductor extending from the opposite side of the bracket and connected to the first conductor, and a connector detachably attached to the second conductor and configured to connect the second conductor to an RF reference measurement circuit but not to a drive circuit. The connector is T-shaped and includes a body connected to the second conductor, and a cylindrical portion extending from the body, which includes a cavity. The cavity of the cylindrical portion is configured to connect to an RF reference measurement circuit.

[0023] In other features, the makebreak connector includes a bracket, a first conductor extending from one side of the bracket, a second conductor extending from the opposite side of the bracket and connected to the first conductor, and a connector detachably attached to the second conductor and configured to connect the second conductor to a drive circuit but not to an RF reference measurement circuit. The connector includes a body, a bore within the body, and a fastener extending through the bore to connect the body to the second conductor.

[0024] In another feature, the make-break connector includes a bracket, a first conductor extending from one side of the bracket, a second conductor extending from the opposite side of the bracket and connected to the first conductor, and a connector removably mounted to the second conductor and configured to connect the second conductor to one of an RF reference measurement circuit and a drive circuit. The connector includes a T-shaped connector.

[0025] In another feature, the T-shaped connector includes a first leg and a second leg including a first cavity and a second cavity, respectively. The first leg and the second leg are slidably received on the second conductor. The T-shaped connector includes a third leg disposed transversely to the first leg and the second leg and including a cavity configured to connect to the RF reference measurement circuit.

[0026] In another feature, the T-shaped connector includes a body including a bore, a fastener extending through the bore to connect the body to the second conductor, and a cylindrical portion extending from the body and including a cavity configured to connect to the RF reference measurement circuit.

[0027] In another feature, the cylindrical portion has an axis, and the fastener is connected transversely to the axis.

[0028] In another feature, the cylindrical portion has an axis, and the fastener is connected in a direction parallel to the axis.

[0029] Further areas of applicability of the present disclosure will become apparent from the detailed description, claims and drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. [BRIEF DESCRIPTION OF THE DRAWINGS]

[0030] The present disclosure will be more fully understood from the detailed description and the accompanying drawings.

[0031] [Figure 1]Figure 1 is a functional block diagram of an example of a substrate processing system including one or more RF direct drive circuits according to the present disclosure.

[0032] [Figure 2A] Figure 2A is a functional block diagram and electrical circuit diagram of an example of an RF direct drive circuit according to this disclosure. [Figure 2B] Figure 2B shows a functional block diagram and an electrical circuit diagram of an example of an RF direct drive circuit according to this disclosure.

[0033] [Figure 3A] Figure 3A is a functional block diagram of an example of an RF direct drive circuit connected to a load according to this disclosure.

[0034] [Figure 3B] Figure 3B is a functional block diagram of an RF direct drive circuit connected to the RF reference measurement circuit according to this disclosure.

[0035] [Figure 4] Figure 4 is a functional block diagram of an example of an RF direct drive circuit and a first and second RF reference measurement circuit operating in the first and second RF ranges according to this disclosure.

[0036] [Figure 5] Figure 5 is an electrical circuit diagram of an example of an LC circuit for a first RF reference according to this disclosure.

[0037] [Figure 6] Figure 6 is an electrical circuit diagram of an example of an LC circuit for a second RF reference according to this disclosure.

[0038] [Figure 7] Figure 7 is a perspective view of an example of a direct drive system according to this disclosure.

[0039] [Figure 8A] Figure 8A is a perspective view of an example of a first RF reference measurement circuit for a direct drive system according to the present disclosure. [Figure 8B]Figure 8B is a perspective view of an example of a first RF reference measurement circuit for a direct drive system according to the present disclosure.

[0040] [Figure 9A] Figure 9A is a perspective view of an example of a second RF reference measurement circuit for a direct drive system according to the present disclosure. [Figure 9B] Figure 9B is a perspective view of an example of a second RF reference measurement circuit for a direct drive system according to the present disclosure.

[0041] [Figure 10A] Figure 10A is a perspective view of an example of the top of a makebreak connector for a direct drive system according to the present disclosure. [Figure 10B] Figure 10B is a perspective view of an example of the top of a makebreak connector for a direct drive system according to the present disclosure.

[0042] [Figure 11] Figure 11 is a perspective view of an example of a makebreak connector for a direct drive system according to the present disclosure.

[0043] [Figure 12A] Figure 12A is a perspective view of an example of the top of a makebreak connector for a direct drive system according to the present disclosure. [Figure 12B] Figure 12B is a perspective view of an example of the top of a makebreak connector for a direct drive system according to the present disclosure.

[0044] [Figure 13] Figure 13 is a perspective view of another example of the top of a makebreak connector for a direct drive system according to the present disclosure.

[0045] [Figure 14] Figure 14 is a perspective view of another example of the top of a makebreak connector for a direct drive system according to the present disclosure.

[0046] In drawings, reference numbers may be reused to identify similar and / or identical elements. [Modes for carrying out the invention]

[0047] In some applications, the RF frequency of the RF source power or RF bias power supplied to electrodes in an ICP coil and / or substrate support is switched between two or more frequencies and / or two or more pulse levels. RF pulses at multiple frequencies and / or multiple levels are shown and described in U.S. Patent No. 9,515,633 by the same applicant, entitled "Transformer-Coupled Capacitive Tuning Circuit with Fast Impedance Switching for Plasma Etching Chamber," which is incorporated herein by reference in its entirety.

[0048] In these systems, the impedance of the RF generator is matched to the load (e.g., induction coil and plasma, or electrode and plasma). However, the load impedance changes due to changes in plasma state, changes in pulse level, and / or various other factors. When impedance mismatch occurs, power is reflected by the load, resulting in inefficiency. Tuning circuits using variable capacitors is difficult due to the amount of time required to change the capacitance value for the switching period between frequency changes and / or level changes.

[0049] To mitigate some of the aforementioned challenges, RF direct drive circuits with low output impedance can be used. In some examples, the impedance of RF direct drive circuits is primarily resistive and has relatively low resistance (e.g., about 1 ohm). For example, direct drive circuits and hybrid direct drive circuits are shown in U.S. Patent Application No. 16 / 007,481, filed June 13, 2018, entitled "Direct Drive RF Circuit for Substrate Processing System," by the same applicant, which is incorporated herein by reference in its entirety. Further examples of direct drive circuits are shown and described in U.S. Patent Publication No. 2019 / 0007004, published January 3, 2019, entitled "High Gain Resonant Amplifier for Resistive Output Impedance," which is incorporated herein by reference in its entirety.

[0050] To ensure that the substrate processing system operates reliably within the desired operating parameters (such as non-uniformity), the RF power or RF bias output by the direct drive system should be measured periodically (or event-wise) and calibrated as necessary. However, the output of a direct drive circuit is difficult to measure because it has a relatively low impedance compared to the impedance of commercially available and / or other existing coaxial cables, RF power meters, and / or dummy loads already located in the fabroom. Most existing coaxial cables, RF power meters, and / or dummy loads have an impedance of approximately 50 Ω. The systems and methods described herein are used to measure one or more parameters of the RF power and / or RF bias signals generated by an RF direct drive system.

[0051] The system and method according to this disclosure include a makebreak connector positioned between a direct drive circuit and a processing chamber load (e.g., components of the processing chamber and / or plasma). The makebreak connector connects the direct drive circuit to the processing chamber load or to an RF reference measurement circuit including a dummy load. The RF reference measurement circuit includes an LC circuit having an input impedance matched to the impedance of the direct drive circuit and an output impedance matched to the impedance of a coaxial cable, an RF power meter, and a dummy load. This allows for measurement using an existing RF power meter, coaxial cable, and dummy load, thus reducing costs.

[0052] Referring now to Figure 1, an example of the substrate processing system 10 according to this disclosure is shown. The substrate processing system 10 includes an RF drive circuit 12. The RF drive circuit 12 may include an RF source and a matching network or a direct drive circuit as described herein.

[0053] In some examples, a plenum 20 may be placed between the coil 16 and the dielectric window 24 to control the temperature of the dielectric window 24 with hot and / or cold airflow. The dielectric window 24 is positioned along one side of the processing chamber 28. The processing chamber 28 further includes a substrate support (or base) 32. The substrate support 32 may include an electrostatic chuck (ESC), a mechanical chuck, or other types of chucks. A process gas is supplied to the processing chamber 28 and plasma 40 is generated within the processing chamber 28. The plasma 40 etches the exposed surface of the substrate 34.

[0054] An RF drive circuit 52 may be used to provide an RF bias to electrodes in the substrate support 32 during operation. The RF drive circuit 52 may include an RF source and a matching network or a direct drive circuit (as described herein). At least one of the RF drive circuits 12 and / or 52 includes an RF direct drive circuit.

[0055] A gas supply system 56 may be used to supply a process gas mixture to the processing chamber 28. The gas supply system 56 may include a process gas and inert gas source 57, a gas metering system 58 such as valves and a mass flow controller, and a manifold 59. The coil 16 and dielectric window 24 may be cooled using a gas such as air. The substrate support 32 may be heated / cooled to a predetermined temperature using a heater / cooler 64. The exhaust system 65 includes valves 66 and a pump 67 to remove reactants from the processing chamber 28 by purging or exhausting. A controller 54 may be used to control the etching process. The controller 54 monitors system parameters and controls the supply of the gas mixture, plasma impact, plasma maintenance and plasma extinguishing, reactant removal, and cooling gas supply.

[0056] Referring here to Figures 2A and 2B, an example of an RF direct drive circuit 200 for supplying RF bias power or RF plasma power is shown. In Figure 2A, the RF direct drive circuit 200 includes a clock 220 operating at one or more selected RF frequencies. The clock signal output by the clock 220 is input to a gate drive circuit 222. In some examples, the gate drive circuit 222 includes an amplifier 244 and an inverting amplifier 246, each having an input connected to the clock 220.

[0057] The output of the gate drive circuit 222 is input to the half-bridge circuit 238. In some examples, the half-bridge circuit 238 includes a first switch 240 and a second switch 242. In some examples, the first switch 240 and the second switch 242 include metal-oxide-semiconductor field-effect transistors (MOSFETs). The first switch 240 and the second switch 242 each include a control terminal and first and second terminals. The output of the amplifier 244 of the gate drive circuit 222 is input to the control terminal of the first switch 240. The output of the inverting amplifier 246 of the gate drive circuit 222 is input to the control terminal of the second switch 242.

[0058] Output node 230 is connected to the second terminal of the first switch 240 and the first terminal of the second switch 242. The first terminal of the first switch 240 is connected to the first DC power supply 270. The second terminal of the second switch 242 is connected to a reference potential such as earth.

[0059] The output node 230 is connected to the cathode 234 by an inductor 232. In some examples, a resistor R p and capacitance C in series p The impedances observed by the RF direct drive circuit 200 (e.g., plasma capacitance and resistance, capacitance and resistance of electrodes (or other components) within the substrate support, and / or other stray or parasitic capacitance and resistance) may be modeled using this method.

[0060] The RF direct drive circuit in Figure 2B uses +V to remove the DC bias. DC / 2 and -V DC This includes first and second DC power supplies 270 and 280 operating at half the voltage of the single DC power supply in Figure 2A. In some examples, both the first and second DC power supplies 270 and 280 operate at half the voltage of the single DC power supply in Figure 2A to obtain the same output RF power. In some examples, the first DC power supply 270 and the second DC power supply 280 operate at approximately the same magnitude and opposite polarity. As used herein, approximately the same means that the difference in the magnitude of the DC voltage output by the first DC power supply 270 compared to the second DC power supply 280 is less than 20%, 5%, or 2%. The first DC power supply 270 is connected to the first terminal of the first switch 240. The second DC power supply 280 is connected to the second terminal of the second switch 242.

[0061] In some examples, current sensors 282 and voltage sensors 284 sense current and voltage at output node 230. Phase offset calculator 290 receives the sensed current and voltage signals and generates a phase offset signal that is output to clock frequency adjuster 292. Clock frequency adjuster 292 generates a clock adjustment signal based on the phase offset signal. In other features, clock frequency adjuster 292 increases the frequency of clock 220 when current leads voltage and decreases the frequency of clock 220 when voltage leads current.

[0062] Referring here to Figures 3A and 3B, the direct drive circuit 310 can be connected to a load 312, such as a component of a processing chamber, or to an RF reference measurement circuit 314 that performs measurements to evaluate the operation of the direct drive circuit 310. In Figure 3A, the makebreak connector 316 is configured to connect the direct drive circuit 310 to the load 312 during normal operation mode. The makebreak connector 316 may include fasteners, conductors, and / or other hardware that are manually attached and / or removed to make and / or disconnect the appropriate connection. While operating in normal operation mode, the direct drive circuit 310 drives the load 312 as described above.

[0063] Periodically, or on an eventual basis, the output of the direct drive circuit is tested to ensure that the processing chamber is functioning correctly. However, dummy loads, RF power meters, and coaxial cable connectors have much higher impedances that do not match the output impedance of the direct drive circuit.

[0064] In Figure 3B, the makebreak connector 316 is configured to connect the direct drive circuit 310 to the LC circuit 320 during RF reference measurement mode. The output of the LC circuit 320 is connected to the RF power meter 324. Conductor 326 connects the RF power meter 324 to the dummy load 328. In some examples, conductor 326 includes a coaxial cable, but other conductors can also be used.

[0065] The output impedance of the direct drive circuit 310 is not matched to the impedance of the conductor 326, the impedance of the RF power meter 324, and the impedance of the dummy load. In some examples, the output impedance of the direct drive circuit 310 is in the range of 0.1 ohms (Ω) to 5 ohms. In some examples, the output impedance of the direct drive circuit 310 is in the range of 0.5 ohms (Ω) to 2 ohms.

[0066] In some examples, the impedance of conductor 326 and RF power meter 324 is greater than the output impedance of the direct drive circuit 310. For example, the impedance of conductor 326, RF power meter 324, and dummy load 328 may be in the range of 20 ohms (Ω) to 100 ohms. For example, the impedance of conductor 320, RF power meter 324, and dummy load 328 may be in the range of 45 ohms (Ω) to 55 ohms. For example, the impedance of conductor 320 and RF power meter 324 may be 50 ohms.

[0067] Referring to Figure 4, the direct drive circuit 410 is shown in RF reference measurement mode. The direct drive circuit 410 includes first and second outputs in a first frequency range and a second frequency range. In some examples, the first frequency range is 1.8 MHz to 2.2 MHz, but other frequency ranges are also available. In some examples, the second frequency range is 12.35 MHz to 13.65 MHz, but other frequency ranges are also available.

[0068] The makebreak connector 414 connects the first output of the direct drive circuit 410 to the LC circuit 420 during the first reference measurement mode, or to the load 412 during the first direct drive mode. The LC circuit 420 is connected to the RF power meter 424 by a conductor 426. The conductor 426 connects the RF power meter 424 to a dummy load 428. In some examples, the conductor 426 includes a coaxial cable.

[0069] The makebreak connector 434 connects the second output of the direct drive circuit 410 to the LC circuit 440 during the second RF reference measurement mode, or to a load 432, such as a component of the processing chamber, during the second direct drive mode. In some examples, loads 412 and 432 are the same load or separate loads. The LC circuit 440 is connected to the RF power meter 444 by a conductor 446. The conductor 446 connects the RF power meter 444 to a dummy load 448. In some examples, the conductor 446 includes a coaxial cable.

[0070] Referring to Figure 5, an example of an LC circuit 440 in the first frequency range is shown. The LC circuit 420 has a capacitor C1 connected in series with a resistor R L1 The circuit includes an inductor L1 (which has a specific impedance). A capacitor C2 is connected between the inductor L1 and the capacitor C1. In some examples, the LC circuit 420 has an input impedance that matches the impedance of the direct drive circuit and an output impedance that matches the impedance of the connector, RF power meter, and dummy load.

[0071] Referring to Figure 6, an example of an LC circuit 420 for the second frequency range is shown. The LC circuit 440 has a capacitor C3 connected in series with a resistor R L2 It includes an inductor L2 (having a capacitor). Capacitor C4 is connected between capacitor C3 and the output of LC circuit 440. In some examples, LC circuit 440 has an input impedance that matches the impedance of the direct drive circuit and an output impedance that matches the impedance of the connector, RF power meter, and load.

[0072] Referring here to Figure 7, an example of a direct drive system 700 is shown. The direct drive system 700 includes a plurality of stacked housings defining an upper level 704, an intermediate level 706, and a lower level 708. In some examples, the direct drive system 700 may be located above the processing chamber. In some examples, the side walls, as well as the top and bottom surfaces, are made of a conductive material such as aluminum.

[0073] The upper level 704 includes a housing 710 that houses the direct drive circuit 712 described above. In some examples, the intermediate level 706 includes multiple housings. Housing 713-1 houses a first RF reference measurement circuit 714-1 and includes a connector 716-1 (such as a coaxial connector) located on the outer wall of housing 713-1. The intermediate level 706 further includes housing 713-2 that houses a second RF reference measurement circuit 714-2 and includes a connector 716-2 (such as a coaxial connector) located on the outer wall of housing 713-2.

[0074] In some examples, enclosure 713-1 is positioned parallel to and spaced apart from enclosure 713-2. In some examples, the intermediate level 706 may include one or more additional enclosures (such as enclosure 718). In some examples, one or more enclosures of the intermediate level 706 include one or more fans 720 to circulate air within the enclosures.

[0075] The lower level 708 includes a housing 724-1 that houses a first makebreak connector 726-1. The first makebreak connector 726-1 connects one of the outputs of the direct drive circuit 712 to the first RF reference measurement circuit 714-1 or to a component of the processing chamber (such as an induction coil or electrode in a substrate support), or disconnects the direct drive circuit 712 from both the first RF reference measurement circuit 714-1 and the components of the processing chamber.

[0076] The lower level 708 further includes another housing 724-2 that houses a second makebreak connector 726-2 for connecting one of the outputs of the direct drive circuit 712 to a second RF reference measurement circuit 714-2 or a component of the processing chamber, or for disconnecting the direct drive circuit 712 from both the second RF reference measurement circuit 714-2 and the components of the processing chamber.

[0077] Referring here to Figures 8A and 8B, a first RF reference measurement circuit 714-1 for a direct drive system is shown. The first RF reference measurement circuit 714-1 includes a plate 810 electrically connected to a connector 716-1. The plate 810 is also connected to the first terminals of one or more capacitors 816 connected in parallel to the plate 810. The second terminals of one or more capacitors 816 are connected to the plate 812. In some examples, the capacitors 816 include ceramic capacitors, but other types of capacitors can also be used.

[0078] One or more capacitors 820 are connected in parallel between the plate 812 and a reference potential. For example, the reference potential may be provided by the grounded bottom surface of the housing. In some examples, the capacitors include vacuum capacitors. An extension 824 of the plate 812 is connected to one end of an inductor 830. In some examples, the inductor 830 includes conductive material wound in a helical coil. In some examples, the conductive material includes copper or silver (Ag) plated copper. The opposite end of the inductor 830 is connected to one end of the plate 842. In some examples, the windings of the inductor 830 are held apart by a separator 834 extending between them. In some examples, the separator 834 includes a body 835 and a plurality of projections 836 extending spaced apart from the body 835. The ends of the plurality of projections 836 are located between the windings of the inductor 830. In some examples, the separator 834 is made of a non-conductive material such as plastic, but other materials may also be used. In some examples, the separator 834 is made of polyetheretherketone (PEEK). The opposite end of plate 842 is connected to connector 844. Connector 844 extends through the housing to connector 850. In some examples, connector 850 includes a male connector having a cylindrical body.

[0079] Referring here to Figures 9A and 9B, a second RF reference measurement circuit 714-2 for a direct drive system is shown. The second RF reference measurement circuit 714-2 includes a plate 910 connected to connector 716-1. One or more capacitors 912 are connected in parallel between the plate 910 and a reference potential (such as ground, e.g., a grounded enclosure wall). An extension 924 of the plate 910 is connected to one end of an inductor 930. The other end of the inductor 930 is connected to one end of a plate 942. In some examples, the windings of the inductor 930 are isolated by a separator 934.

[0080] The opposite end of plate 942 connects to connector 944. Connector 944 extends through the housing to connector 950. In some examples, connector 950 includes a male connector, such as a cylindrical conductive part.

[0081] Referring here to Figures 10A and 10B, the top of the makebreak connector 1010 for a direct drive system is shown. The makebreak connector 1010 includes a conductor 1020 enclosed by one or more ring portions 1022 and 1024 and a base portion 1024. In some examples, one or more ring portions 1022 and 1024 have a centering function relative to the female connector of the direct drive circuit. In some examples, the conductor 1020 includes a cylindrical conductor portion, but other shapes are also available.

[0082] Conductor 1028 extends downward from base portion 1024 and is electrically connected to conductor 1020. In some examples, conductor 1028 includes a mounting portion 1029 having a cylindrical shape and configured to receive a T-connector 1040. In some examples, the mounting portion 1029 has a flat surface that mates with the flat surface of the body 1042 of the T-connector 1040.

[0083] The T-shaped connector 1040 extends from the body 1042 and includes a cylindrical portion 1048 that forms a central cavity 1050. In some examples, the central cavity 1050 is cylindrical and configured to receive one of the connectors 850, 950. In some examples, the T-shaped connector 1040 includes one or more fasteners 1044, such as threaded bolts, that are received within the bore 1030 for attaching the T-shaped connector 1040 to the conductor 1028. In some examples, the fasteners 1044 extend transversely to the axis of the central cavity 1050. While specific configurations relating to the makebreak connector 1010 are shown, other configurations are also available.

[0084] Referring here to Figure 11, a makebreak connector 1100 for a direct drive system is shown. Connector 1150 is shown in direct drive mode (connected) and RF reference measurement mode (disconnected). In some examples, connector 1150 includes a rectangular body and one or more flanges 1155 extending along the opposite side of the rectangular body. One or more fasteners 1154 connect and position the connector 1150 to the conductor 1028.

[0085] The connector 1150 is attached to or coupled to the strap 1120. The strap 1120 is connected to a capacitor 1124, one end of which is supported (fixed or rotatably) by a support bracket 1125. The other end of the capacitor 1124 is connected to a strap 1227 (connected to a bracket 1170) and one end of a capacitor 1128. The other end of the capacitor is connected to the support bracket 1125. In some examples, the bracket 1170 is connected to the housing wall. In some examples, the strap 1120 is rotatable relative to the mounting bracket 1125. Conductor 1134 is connected to components of the processing chamber by conductors 1180 and 1182.

[0086] Referring here to Figures 12A and 12B, the top of another example of a makebreak connector 1200 for a direct drive system is shown. Instead of using a conductor 1028 with mounting portion 1029, a conductor 1210 and a T-shaped sliding connector 1220 are used. In some examples, the conductor 1210 has a cylindrical shape. The conductor 1210 is slidably received by the conductive cylindrical inner cavity of the T-shaped sliding connector 1220. The T-shaped sliding connector 1220 includes a first leg 1230 and a second leg 1232 that are aligned axially. The first leg 1230 is connected to the conductor 1210. The T-shaped sliding connector 1220 includes a third leg 1234 that is positioned transversely to the first leg 1230 and the second leg 1232. The conductive cavity 1238 of the third leg 1234 is configured to connect to one of the connectors 850, 950 when positioned in RF reference measurement mode.

[0087] In Figure 12A, the second leg 1232 is shown to connect to the mating connector 1242 (best seen in Figure 12B) extending from the strap 1120 (instead of connector 1150) when positioned in direct drive mode. The third leg 1234 is disconnected from connectors 850 and 950.

[0088] In Figure 12B, when in RF reference measurement mode, the second leg 1232 is disconnected from the mating connector 1242, and the third leg 1234 is connected to one of the connectors 850 or 950. As can be seen, the T-shaped sliding connector 1220 allows for rapid reconfiguration between direct drive mode and RF reference measurement mode.

[0089] Referring now to Figure 13, the top of another makebreak connector 1300 is shown in direct drive mode. The top of a strap 1304 (similar to 1120 but with a different end configuration) is also shown. The strap 1304 includes an "L" shaped end 1320 which includes a first portion 1322 and a second portion 1324. In some examples, the first portion 1322 is transverse to the second portion 1324. Each of the first portions 1322 further includes one or more bores 1334 for receiving one or more threaded fasteners 1330. In Figure 13, the strap 1304 is connected to the makebreak connector 1300 in a plane which is transverse to the plane containing the widest portion of the strap 1304 (in contrast to Figure 11, which is parallel).

[0090] Referring here to Figure 14, the upper part of the makebreak connector 1300 is shown configured in an RF reference measurement mode. The upper part of the strap 1304 is cut off. In some examples, the strap 1304 rotates around the support bracket 1125 so as to move away from the upper part of the makebreak connector 1300. The T-shaped connector 1410 includes an "L" shaped end 1420 which includes a first part 1422 and a second part 1424. In some examples, the first part 1422 is transverse to the second part 1424. Each of the first parts 1422 further includes one or more bores 1434 for receiving one or more threaded fasteners 1430. The T-shaped connector 1410 includes a cylindrical part 1452 which constitutes an inner cavity 1454 for receiving one of the connectors 850 or 950. In this example, the fastener is mounted in a direction parallel to the axis of the cavity (unlike other versions which are mounted transversely). By adjusting the position of the fasteners, the T-shaped connector 1410 can be installed more easily.

[0091] The foregoing description is purely illustrative and is not intended to limit the Disclosure, its application, or its use. The broad teachings of this Disclosure can be implemented in various forms. Therefore, although this Disclosure includes specific examples, the true scope of this Disclosure should not be limited to such examples, as other modifications will become apparent when considering the drawings, specification, and the claims below. It should be understood that one or more steps within a Method may be performed in a different order (or simultaneously) without altering the principles of this Disclosure. Furthermore, although each embodiment is described above as having specific features, it is possible to implement one or more of these features described in relation to any embodiment of this Disclosure in other embodiments, and / or combine them with any feature of any other embodiment, even if such combinations are not explicitly described. That is, the described embodiments are not mutually exclusive, and substituting one or more embodiments with one another remains within the scope of this Disclosure.

[0092] Spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using a variety of terms, including “connected,” “engaged,” “joined,” “adjacent,” “next to,” “above,” “above,” “below,” and “positioned.” In the above disclosure, when a relationship between a first element and a second element is described, unless it is explicitly described as “direct,” that relationship may be a direct relationship in which no other intervening elements exist between the first element and the second element, as well as an indirect relationship in which one or more intervening elements exist (spatially or functionally) between the first element and the second element. As used herein, the expression “at least one of A, B, and C” should be interpreted as meaning a logic (A or B or C) using a non-exclusive logic OR, and not as “at least one of A, at least one of B, and at least one of C.”

[0093] In some embodiments, the controller may be part of the system and may be part of the examples described above. Such a system may comprise a semiconductor processing apparatus including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling system operation before, during, and after processing of semiconductor wafers or substrates. The electronics may be referred to as “controllers” and may control various components or sub-parts of one or more systems. Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein. Such processes include supplying processing gases, setting temperature (e.g., heating and / or cooling), setting pressure, setting vacuum, setting power, setting radio frequency (RF) generator settings, setting RF matching circuit settings, setting frequency, setting flow rate, setting fluid supply, setting position and operation, loading and unloading wafers into and out of tools, and loading and unloading wafers into and out of other transport tools and / or load locks connected to or interlocked with a particular system.

[0094] In a broad sense, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions are instructions communicated to the controller in the form of various individual settings (or program files) that may define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, operational parameters are part of a recipe defined by a process engineer that may achieve one or more processing steps during the manufacturing of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0095] In some embodiments, the controller may be integrated with the system, coupled to it, networked to the system, or a combination of both, or coupled to it as part of a computer. For example, the controller may be in the “cloud” and may be all or part of a fab host computer system. This enables remote access to wafer processing. The computer may enable remote access to the system, monitor the current progress of manufacturing operations, investigate the history of past manufacturing operations, investigate trends or performance criteria from multiple manufacturing operations, modify parameters of the current process, set processing steps following the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network. Such a network may include a local network or the internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each of the processing steps performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to work with or control. Therefore, as described above, the controllers may be distributed, for example, by including one or more individual controllers that are networked together and cooperate toward a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber that are located remotely (for example, at the platform level or as part of a remote computer) and communicate with one or more integrated circuits coupled to control the processes on the chamber.

[0096] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, tracking chambers or modules, and any other semiconductor processing systems related to or used in the fabrication and / or manufacture of semiconductor wafers.

[0097] As described above, depending on one or more process steps performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, the main computer, another controller, or tools used for material transfer to and from tool locations and / or load ports within the semiconductor production plant.

Claims

1. A substrate processing system, A drive circuit configured to generate an RF drive signal at a first RF frequency, An RF reference measurement circuit including an LC circuit having an input impedance and an output impedance, wherein the output of the LC circuit is configured to be connected to an RF power meter and a dummy load, A makebreak connector configured to connect the drive circuit to one of the processing chamber loads, which includes the RF reference measurement circuit and the components of the substrate processing system. Equipped with, The output impedance of the drive circuit is matched to the input impedance of the LC circuit. The output impedance of the drive circuit does not match the impedance of the RF power meter and the dummy load. A substrate processing system in which the LC circuit is configured to match the impedance of the drive circuit to the RF power meter and the dummy load.

2. A substrate processing system according to claim 1, A substrate processing system comprising an RF reference measurement circuit including a first conductor connected to the output of the LC circuit, and an RF power meter connected to the first conductor.

3. A substrate processing system according to claim 2, A substrate processing system comprising an RF reference measurement circuit including a second conductor connected to the output of the RF power meter, and a dummy load connected to the second conductor.

4. A substrate processing system according to claim 3, A substrate processing system in which the output impedance of the drive circuit and the input impedance of the LC circuit are in the range of 0.1 Ω to 10 Ω.

5. A substrate processing system according to claim 4, A substrate processing system in which the output impedance of the drive circuit and the input impedance of the LC circuit are in the range of 0.5 Ω to 2 Ω.

6. A substrate processing system according to claim 3, A substrate processing system in which the output impedance of the LC circuit and the impedances of the RF power meter, the dummy load, the first conductor, and the second conductor are in the range of 20 Ω to 100 Ω.

7. A substrate processing system according to claim 6, A substrate processing system in which the output impedance of the LC circuit and the impedances of the RF power meter, the dummy load, the first conductor, and the second conductor are in the range of 45 Ω to 55 Ω.

8. A substrate processing system according to claim 3, The aforementioned LC circuit is A first connector connected to the aforementioned makebreak connector, An inductor with one end connected to the first connector, A first capacitor connected in series to the opposite end of the inductor, A second capacitor is connected in parallel between the opposite end of the inductor and the first capacitor. A substrate processing system including this.

9. A substrate processing system according to claim 8, A substrate processing system comprising one or more ceramic capacitors, the first capacitor having a first terminal connected to the second capacitor and a second terminal connected to a second connector.

10. A substrate processing system according to claim 9, The second conductor is a substrate processing system including a coaxial cable.

11. A substrate processing system according to claim 8, The second capacitor is a substrate processing system comprising one or more vacuum capacitors.

12. A substrate processing system according to claim 8, A substrate processing system wherein the input impedance of the LC circuit is in the range of 0.5Ω to 2Ω, and the output impedance of the LC circuit is in the range of 45Ω to 55Ω.

13. A substrate processing system according to claim 8, The substrate processing system wherein the first RF frequency is in the range of 1.8 MHz to 2.2 MHz.

14. A substrate processing system according to claim 3, The aforementioned LC circuit is A first connector connected to the aforementioned makebreak connector, An inductor with one end connected to the first connector, A first capacitor connected in series to the opposite end of the inductor, A second capacitor connected in parallel to the opposite end of the first capacitor and A substrate processing system including this.

15. A substrate processing system according to claim 14, A substrate processing system comprising one or more vacuum capacitors, wherein the first capacitor and the second capacitor.

16. A substrate processing system according to claim 14, The substrate processing system wherein the first RF frequency is in the range of 12.35 MHz to 13.65 MHz.

17. A substrate processing system according to claim 1, The aforementioned makebreak connector is Bracket and A first conductor extending from one side of the bracket, Extending from the opposite side of the bracket, a second conductor connected to the first conductor, A connector that is detachably attached to the second conductor and configured to connect the second conductor to the RF reference measurement circuit but not to the drive circuit, and Includes, The connector is T-shaped and includes a body connected to the second conductor and a cylindrical portion extending from the body, which includes a cavity. A substrate processing system in which the cavity of the cylindrical portion is configured to be connected to the RF reference measurement circuit.

18. A substrate processing system according to claim 1, The aforementioned makebreak connector is Bracket and A first conductor extending from one side of the bracket, Extending from the opposite side of the bracket, a second conductor connected to the first conductor, A connector that is detachably attached to the second conductor, connects the second conductor to the drive circuit, and is configured not to connect to the RF reference measurement circuit. Includes, The connector is a substrate processing system comprising a body, a bore within the body, and a fastener extending through the bore to connect the body to the second conductor.

19. A substrate processing system according to claim 1, The aforementioned makebreak connector is Bracket and A first conductor extending from one side of the bracket, Extending from the opposite side of the bracket, a second conductor connected to the first conductor, A connector detachably attached to the second conductor and configured to connect the second conductor to one of the RF reference measurement circuit and the drive circuit, Includes, The aforementioned connector is a circuit board processing system including a T-shaped connector.

20. A substrate processing system according to claim 19, The T-shaped connector each includes a first leg and a second leg, each containing a first and second cavity, The first leg and the second leg are slidably received on the second conductor, A substrate processing system comprising a T-shaped connector, a third leg including a cavity configured to be positioned transversely to the first and second legs and connected to the RF reference measurement circuit.

21. A substrate processing system according to claim 19, The aforementioned T-shaped connector is The main body including the boa, A fastener extending through the bore to connect the main body to the second conductor, A cylindrical portion extending from the main body and including a cavity configured to be connected to the RF reference measurement circuit, A substrate processing system including this.

22. A substrate processing system according to claim 21, The cylindrical portion has an axis, The fastener is connected to the shaft in a transverse direction in a substrate processing system.

23. A substrate processing system according to claim 21, The cylindrical portion has an axis, The fastener is connected in a direction parallel to the axis, and is part of a substrate processing system.

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