Joining device, joining method, and method for manufacturing articles

Abstract

The present invention provides a bonding apparatus that is advantageous in bonding processes using multiple bonding heads. [Solution] A bonding apparatus for bonding multiple dies to an object to be bonded, comprising: a first holding part for holding a first die; a second holding part different from the first holding part for holding a second die; and a control unit for controlling the positions of the first holding part and the second holding part, wherein the control unit is switchable between a first control that controls the time during which the first die held by the first holding part and the object to be bonded are in contact with the object to be bonded and the time during which the second die held by the second holding part and the object to be bonded are in contact, and a second control that controls the time during which the first die held by the first holding part and the object to be bonded are in contact, so as not to come into contact with the object to be bonded.

Description

TECHNICAL FIELD

[0001] The present invention relates to a bonding apparatus, a bonding method, and a method for manufacturing an article.

BACKGROUND ART

[0002] Patent Document 1 discloses a bonding apparatus that bonds a die held by a bonding head to an object to be bonded.

PRIOR ART DOCUMENTS

PATENT DOCUMENTS

[0003]

PATENT DOCUMENT 1

SUMMARY OF THE INVENTION

PROBLEMS TO BE SOLVED BY THE INVENTION

[0004] Here, when a bonding process is performed using a plurality of bonding heads, there are cases where it is not preferable for the plurality of bonding heads to perform the bonding process at the same time.

[0005] Accordingly, an object of the present invention is to provide a bonding apparatus that is advantageous in a bonding process using a plurality of bonding heads.

MEANS FOR SOLVING THE PROBLEMS

[0006] To achieve the above objective, a bonding apparatus as one aspect of the present invention is a bonding apparatus for bonding a plurality of dies to a workpiece, comprising: a first holding part for holding a first die; a second holding part different from the first holding part for holding a second die; and a control unit for controlling the positions of the first holding part and the second holding part, wherein the control unit can switch between a first control that controls the time during which the first die held by the first holding part and the workpiece are in contact with each other and the time during which the second die held by the second holding part and the workpiece are in contact with each other, and a second control that controls the time during which the first die held by the first holding part and the workpiece are in contact with each other.

[0007] Further objects or other aspects of the present invention will be revealed by embodiments described below with reference to the drawings. [Effects of the Invention]

[0008] According to the present invention, it is possible to provide a bonding apparatus that is advantageous in bonding processes using multiple bonding heads. [Brief explanation of the drawing]

[0009] [Figure 1] Schematic diagram of a joining device. [Figure 2] A schematic diagram of the head that holds the die. [Figure 3] Schematic diagram of a wafer stage. [Figure 4] A diagram showing a flowchart of the joining method. [Figure 5] A diagram showing a wafer where the bonding process is partially completed. [Figure 6] This diagram shows an example where the bonding head is retracted from the wafer in the Z-axis direction. [Figure 7] This diagram shows an example of the bonding head being retracted from the wafer in the XY plane. [Figure 8] A flowchart showing the manufacturing process of an item. [Modes for carrying out the invention]

[0010] Embodiments of the present invention will be described below with reference to the drawings. Note that the following embodiments do not limit the invention as defined in the claims. While multiple features are described in the embodiments, not all of these features are necessarily essential to the invention, and the embodiments may be combined in any way. Furthermore, in the drawings, identical or similar configurations are given the same reference numerals, and redundant descriptions are omitted.

[0011] Furthermore, in this specification and its drawings, directions are generally indicated using an XYZ coordinate system in which the vertical direction is the Z-axis direction and the horizontal plane perpendicular to the vertical direction is the XY plane, with each axis being orthogonal to the others. However, if an XYZ coordinate system is indicated in a drawing, that coordinate system takes precedence.

[0012] The specific configurations for each embodiment will be described below.

[0013] <First Embodiment> In the following description, the workpiece to be joined is described as a wafer on which a semiconductor device is formed, and the joined object is described as a pieced die containing a semiconductor device. However, the workpiece to be joined and the joined object are not limited to these, and various modifications and changes are possible within the scope of the gist of the invention.

[0014] For example, the material to be bonded could be a silicon wafer, a silicon wafer with wiring formed on it, a glass wafer, a glass panel with wiring formed on it, a printed wiring board (PWB) with wiring formed on it, a printed circuit board (PCB) with electronic components mounted on it, or a metal panel. Alternatively, the material to be bonded could be a wafer on which a die with a semiconductor device formed on it is bonded to a wafer on which a semiconductor device is formed. Or, the material to be bonded could be a die with a semiconductor device formed on it, rather than a wafer.

[0015] For example, the joined object may be a single singulated die, a stack of several singulated dies, a small piece of material, an optical element, a structure such as MEMS, or the like. The die is singulated through a dicing step (cutting step).

[0016] The bonding method is also not limited to a specific bonding method. For example, the bonding method may be bonding with an adhesive, temporary bonding with a temporary adhesive, bonding by hybrid bonding, atomic diffusion bonding, vacuum lamination, bump bonding, etc., and various temporary bonding and permanent bonding methods can be used.

[0017] Hybrid bonding, also referred to as direct bonding, is a bonding method for directly bonding a joined object and an object to be joined without using wires, adhesives, or the like. An example of hybrid bonding will be briefly described. First, the bonding surfaces of the joined object and the object to be joined are each cleaned, and then the bonding surfaces are hydrophilized and activated by plasma treatment or the like. Then, the activated bonding surfaces of the joined object and the object to be joined are brought into contact with each other to perform temporary bonding. After that, the joined object and the object to be joined are permanently bonded by heat treatment or the like. One of the advantages of hybrid bonding is that interconnects are improved, which can enhance electrical characteristics and improve performance. For example, the data transmission speed between semiconductor devices can be increased, and the overall performance of the device can be significantly improved. Further, another advantage of hybrid bonding is that since dies can be stacked, spatial efficiency can be maximized. This enables the manufacture of small-sized, high-performance devices.

[0018] FIG. 1 is a schematic diagram of a bonding apparatus BD. As shown in FIG. 1, the bonding apparatus BD can include a pickup section 3 and a bonding section 4 arranged on a base 1 that is vibration-damped by mounts 2. Although FIG. 1 shows an example in which the pickup section 3 and the bonding section 4 are mounted on a single base 1, the pickup section 3 and the bonding section 4 may be individually mounted on separate bases. The bonding apparatus BD can be configured to position and bond a die D at a bonding target location on a wafer W as an object to be bonded. The die D can be provided in a state of being held by a dicing tape affixed to a dicing frame 33. The bonding apparatus BD can also include a control unit CNT that controls the pickup section 3 and the bonding section 4. The control unit CNT can be configured by, for example, a PLD (abbreviation for Programmable Logic Device) such as an FPGA (abbreviation for Field Programmable Gate Array), or an ASIC (abbreviation for Application Specific Integrated Circuit), or a general-purpose or dedicated computer with a program incorporated therein, or a combination of all or part of these.

[0019] The pickup section 3 can include a pickup head 31 and a release head 32. The pickup section 3 can peel the die D to be bonded to the wafer W from the dicing tape by the release head 32, and hold this die D by suction with the pickup head 31. The pickup head 31 can, for example, rotate the die D by 180 degrees and transfer it to the bonding head 422 of the bonding section 4.

[0020] The bonding apparatus BD of this embodiment has a plurality of pickup heads (31a, 31b), a plurality of release heads (32a, 32b), and a plurality of bonding heads (422a, 422b). In the example in Figure 1, there are two of each of the pickup heads, release heads, and bonding heads, but the number of pickup heads, release heads, and bonding heads may be different from each other, and the number may be three or more. By providing a plurality of pickup heads, release heads, and bonding heads in this way, the time required for the bonding process can be shortened. Here, the number of pickup heads is, for example, equal to or greater than the number of bonding heads.

[0021] The pickup head 31 may come into contact with the bonding surface of the die D. Therefore, in applications to bonding methods that activate the surface, such as hybrid bonding, it is preferable to make the pickup head 31 a highly stable surface. Making the surface highly stable means, for example, coating the surface of the pickup head 31 that comes into contact with the bonding surface of the die D with a diamond-like carbon (DLC) coating or a fluorine coating. Alternatively, in applications to bonding methods that activate the surface, such as hybrid bonding, it is desirable to reduce the contact area by making the pickup head 31 a shape with a small contact area, such as a high-density pin shape. Alternatively, in applications to bonding methods that activate the surface, such as hybrid bonding, it is preferable to use a non-contact handling method such as a Bernoulli chuck to hold the pickup head 31. Alternatively, in applications to bonding methods that activate the surface, such as hybrid bonding, it is also conceivable that the pickup head 31 does not come into contact with the bonding surface of the die D by holding the side or edge of the die D.

[0022] The bonding unit 4 may include a base plate 41 and a support unit 42. A wafer stage 43 may be placed on the base plate 41. The wafer stage 43 may be driven in the X-axis direction (first direction) and the Y-axis direction (second direction) by a drive mechanism 435 such as a linear motor. The drive mechanism 435 may further be configured to drive the wafer stage 43 in rotation about an axis parallel to the Z-axis direction (third direction). Instead of the drive mechanism 435 driving the wafer stage 43 in rotation about an axis parallel to the Z-axis direction, the bonding head 422 may drive the die D in rotation about an axis parallel to the Z-axis direction. The drive mechanism 435 may constitute a positioning mechanism that changes the relative position between the wafer chuck 432 (or wafer W) and the bonding head 422 (or die D).

[0023] A die measurement unit 431 is located on the wafer stage 43. The die measurement unit 431 is, for example, an imaging unit (camera) that detects (images) the position of characteristic parts of the die D held by the bonding head 422. A bar mirror 433 may be provided on the wafer stage 43. The bar mirror 433 may be used as a target for the interferometer 434. A wafer chuck 432 may be mounted on the wafer stage 43. The wafer chuck 432 holds the wafer W as the object to be bonded. The wafer stage 43 functions as a support for the wafer chuck 432 and the die measurement unit 431.

[0024] A wafer measurement unit 421 is located in the support unit 42. The wafer measurement unit 421 is, for example, an imaging unit (camera). The wafer measurement unit 421 detects (images) the position of characteristic parts of the wafer W, which is the object to be bonded and is held by the wafer chuck 432.

[0025] The control unit CNT may be configured to identify or calculate the positions of multiple bonding targets on the wafer W based on the positions of characteristic areas of the wafer W detected using the wafer measurement unit 421. The support unit 42 may further include an interferometer 434 for measuring the position of the wafer stage 43 using a bar mirror 433. The support unit 42 may also be equipped with a bonding head 422 that receives and holds the die D passed from the pickup head 31 and bonds it to the bonding targets on the wafer W. The support unit 42 functions as a support for the bonding head 422 and the wafer measurement unit 421.

[0026] In the example shown in Figure 1, the pickup head 31 rotates the die D 180 degrees and passes it to the bonding head 422. However, the system may also include a first die holder and a second die holder, where the die D is passed from the pickup head 31 to the first die holder, from the first die holder to the second die holder, and from the second die holder to the bonding head 422. Alternatively, a drive mechanism may be provided to drive the bonding head 422, driving the bonding head 422 to receive the die D. Alternatively, the pickup head 31 may place the die D on a relay platform provided on the wafer stage 43, and the bonding head 422 may hold the die D on the relay platform by a drive mechanism included in the wafer stage 43 or by driving the bonding head 422. In this case, while the die D is placed on the relay platform, the wafer measuring unit 421 may detect the position of characteristic parts of the die D.

[0027] Figure 2 is a schematic diagram of the head that holds the die D. In the example in Figure 2, the pickup head 31 is shown, but a similar configuration can be used for the bonding head 422. The head that holds the die D includes a collet holder 312 that holds the collet 311 and a main body 313 that holds the collet holder 312. The collet holder 312 holds the collet 311, which is a jig that contacts the die D. Figure 2(a) shows the state in which the collet 311, collet holder 312, and main body 313 are not integrated. Figure 2(b) shows the state in which the collet 311, collet holder 312, and main body 313 are integrated. When performing the bonding process, the collet 311, collet holder 312, and main body 313 are integrated as shown in Figure 2(b).

[0028] The main body 313 holds the collet holder 312 and the collet holder 312 holds the collet 311, for example, by the vacuum source 314 drawing gas from the space between the object being held and the object being held. The main body 313 holds the collet holder 312 and the collet holder 312 holds the collet 311, but this can also be achieved by mechanical holding using a mechanism such as claws or by magnetic holding using magnets.

[0029] The collet 311 holds the die D with its holding surface 311a. The collet is made of materials such as fluororubber, PEEK, or SUS. The collet 311 holds the die D by, for example, by drawing gas into the space between the holding surface 311a and the die 51.

[0030] The collet holder 312 is always held by the main body 313. On the other hand, the collet 311 may be replaced depending on the type of die D. Alternatively, the collet 311 may be replaced depending on damage (wear) or contamination that occurs when joining multiple dies D.

[0031] For example, when replacing the collet 311 due to damage or contamination, the used collet is disposed of in a collet disposal unit (not shown), and a new collet supplied from a collet supply unit (not shown) is attached to the collet holder 312. The removal and installation of the collet 311 at this time is performed, for example, by a collet replacement hand (not shown). The collet 311 may also be cleaned as appropriate, and the joining device BD may include a unit for cleaning the collets.

[0032] Figure 3 is a schematic diagram of the wafer stage 43. The wafer W is held by the wafer chuck 432. The wafer W or the wafer stage 43 can be positioned with respect to rotation around axes parallel to the X-axis direction (first direction) and Y-axis direction (second direction), which are orthogonal or intersecting with each other, and the Z-axis direction (third direction), which is orthogonal to them. For this reason, the wafer stage 43 may be provided with bar mirrors 433, more specifically bar mirrors 433a and 433b. Bar mirror 433a can function as a target for interferometers 434a and 434c. The control unit CNT can detect the position of the wafer stage 43 in the X-axis direction based on the output of interferometer 434a, and can also detect the rotation of the wafer stage 43 around an axis parallel to the Z-axis direction based on the outputs of interferometers 434a and 434c. Bar mirror 433b can function as a target for interferometer 434b. The control unit CNT can detect the position of the wafer stage 43 in the Y-axis direction based on the output of interferometer 434b. The control unit CNT may be configured to provide feedback control of the position of the wafer W or wafer stage 43 with respect to rotation around axes parallel to the X-axis, Y-axis, and the Z-axis, which is orthogonal to them, based on the outputs of the interferometers 434a, 434b, and 434c. The interferometer 434 and the control unit CNT may be understood as components of the positioning mechanism described above.

[0033] A reference plate 436 may be provided on the upper surface of the wafer stage 43. Multiple marks 436a, 436b, and 436c may be arranged on the reference plate 436. The reference plate 436 is made of a material with a low coefficient of thermal expansion, and marks can be drawn on it with high positional accuracy. In one example, the reference plate 436 may be made by drawing marks on a quartz substrate using a semiconductor lithography drawing method. The reference plate 436 has a surface that is approximately the same height as the surface of the wafer W and can be observed by the wafer measuring unit 421, but a separate camera may be provided for observing the reference plate 436. The wafer stage 43 may have a configuration that combines a coarse-movement stage that is driven over a large range and a fine-movement stage that is driven over a small range with high precision. In such a configuration, the die measuring unit 431, bar mirrors 433a and 433b, wafer chuck 432, and reference plate 436 may be provided on the fine-movement stage to achieve high-precision positioning.

[0034] Here, we will explain how to ensure the origin position, magnification, X-axis and Y-axis directions (rotation), and orthogonality of the wafer stage 43 using a reference plate 436. Mark 436a is observed by the wafer measuring unit 421, and the output value of the interferometer when mark 436a is located at the center of the output image of the wafer measuring unit 421 is set as the origin of the wafer stage 43. Next, mark 436b is observed by the wafer measuring unit 421, and the Y-axis direction (rotation) and Y-axis magnification of the wafer stage 43 are determined based on the interferometer output value when mark 436b is located at the center of the output image of the wafer measuring unit 421. Next, mark 436c is observed by the wafer measuring unit 421, and the X-axis direction (rotation) and X-axis magnification of the wafer stage 43 are determined based on the interferometer output value when mark 436c is located at the center of the output image of the wafer measuring unit 421. In this way, the direction from mark 436b to mark 436a on the reference plate 436 is used as the Y-axis of the bonding device BD, and the direction from mark 436c to mark 436a is used as the X-axis of the bonding device BD, allowing for calibration of the axis direction and orthogonality. Furthermore, the distance between mark 436b and mark 436a can be used as the scale reference for the Y-axis of the bonding device BD, and the distance between mark 436c and mark 436a can be used as the scale reference for the X-axis of the bonding device BD, allowing for calibration. Since the refractive index of the optical path of the interferometer changes due to atmospheric pressure fluctuations and temperature fluctuations, causing the measured value to fluctuate, it is desirable to perform calibration at arbitrary timings to guarantee the origin position, magnification, rotation, and orthogonality of the wafer stage 43. To reduce fluctuations in the measured value of the interferometer, it is desirable to cover the space in which the wafer stage 43 is located with a temperature-controlled chamber and control the temperature inside the temperature-controlled chamber.

[0035] Although an example of calibration using a reference plate has been described, the calibration method is not limited to this example. For example, calibration may be performed by abutting against a reference surface, or high-precision positioning may be performed using a position measuring instrument with guaranteed absolute values, such as a white light interferometer.

[0036] The position of the wafer stage 43 may be measured by an encoder. Specifically, instead of an interferometer and a bar mirror, an encoder scale and an encoder head may be used. The encoder scale is preferably made of a material with a low coefficient of thermal expansion. In one example, the encoder scale may be created by drawing a scale on a quartz substrate using a semiconductor lithography drawing method. Alternatively, multiple encoder heads may be arranged and switched between depending on the position of the bonding target, for example. Or, a pair of encoder heads may be arranged symmetrically with respect to the bonding target, and such a configuration is advantageous for improving position measurement accuracy.

[0037] In the example shown in Figure 1, the wafer stage 43 moves along the XY plane, but the bonding head 422 may also move along the XY plane, or both the wafer stage 43 and the bonding head 422 may move along the XY plane. If the bonding head 422 moves, it is preferable to provide a measuring mechanism (such as an interferometer or encoder) for measuring the position of the bonding head 422.

[0038] Here, when performing bonding processing using multiple bonding heads 422, it is sometimes undesirable for multiple bonding heads 422 to perform bonding processing simultaneously. Figure 5 shows a wafer W in which bonding processing has been partially completed. The areas shown in black on the wafer W are the bonding completed areas W1 where the bonding of the die D has been completed, and the areas shown in white on the wafer W are the bonding planned areas W2 (W2A, W2B, W2C, W2D) where the bonding of the die D is not yet completed. Now, consider the case where the bonding planned area to be bonded next is W2A, and the first bonding head (first holding part) and the second bonding head (second holding part) are arranged in the Y-axis direction. In this case, only one of the first bonding head or the second bonding head can face the bonding planned area, while the other cannot face the bonding planned area. In other words, the first and second holding parts cannot perform the bonding process simultaneously. If the die held by one holding part is bonded to the bonding area W2A, the die held by the other holding part will come into contact with the wafer W or the wafer chuck 432. The die that comes into contact with the wafer W or the wafer chuck 432 will be damaged.

[0039] Furthermore, for example, the thickness of the first die held by the bonding head 422a as the first holding part and the thickness of the second die held by the bonding head 422b as the second holding part may differ. In such cases, if bonding is performed simultaneously by the first and second holding parts, the time at which the workpiece (workpiece) contacts the first die and the time at which the workpiece (workpiece) contacts the second die may differ, and bonding of at least one of the first and second dies may not be performed properly. Alternatively, the height of the first bonded region, which is the bonded region on the wafer W to which the first die is bonded, and the second bonded region, which is the bonded region on the wafer W to which the second die is bonded, may differ. In such cases, if bonding is performed simultaneously by the first and second holding parts, the time at which the first bonded region contacts the first die and the time at which the second bonded region contacts the second die may differ, and bonding of at least one of the first and second dies may not be performed properly. Furthermore, there are cases where the die held by the first holding part is of the appropriate type and rank (quality) for the first area to be joined, while the die held by the second holding part is of the appropriate type and rank (quality) for the second area to be joined. In such cases, if the joining process is performed simultaneously by the first and second holding parts, an unsuitable die will be joined to the second area to be joined.

[0040] Therefore, this embodiment provides a bonding apparatus advantageous in bonding processes using multiple bonding heads. Specifically, it performs control so that multiple bonding heads perform bonding processes simultaneously, and control so that one bonding head is retracted while the other bonding head is performing bonding processes. The control so that multiple bonding heads perform bonding processes simultaneously is a control so that at least a portion of the time spent bonding the first die held by the first holding unit to the workpiece and the time spent bonding the second die held by the second holding unit to the workpiece overlap. In other words, the bonding apparatus of this embodiment switches between first control and second control during the bonding process. The first control is performed so that at least a portion of the time spent in contact between the first die held by the first bonding head and the wafer W and the time spent in contact between the second die held by the second bonding head and the wafer W overlap. The second control is performed so that the first die held by the first bonding head and the wafer W do not come into contact while the second die held by the second bonding head and the wafer W are in contact. In the first control, the timing at which the first die held in the first bonding head begins to make contact with the wafer W and the timing at which the second die held in the second bonding head begins to make contact with the wafer W may be the same.

[0041] Figure 4 is a flowchart of the bonding method. This bonding method is controlled by the control unit CNT. In step S1001, the wafer W to be bonded is loaded into the bonding apparatus BD and held by the wafer chuck 432. Since foreign matter adhering to the bonding surface will cause bonding failure, the inside of the bonding apparatus BD may be a highly clean space, for example, of class 1. To maintain a high level of cleanliness, the wafer W may also be housed in a highly sealed and clean container, such as a FOUP, and loaded into the bonding apparatus BD from that container. Furthermore, to increase cleanliness, the wafer W may be washed inside the bonding apparatus BD after being loaded. Pre-treatment for bonding may also be performed. For example, cleaning of the wafer W and die D, application of adhesive to the wafer W in the case of bonding with adhesive, or a treatment to activate the surface of the wafer W in the case of hybrid bonding may be performed. The wafer W is roughly positioned by a pre-aligner (not shown) based on the wafer outline position and a notch or orientation flat, and is transported to a wafer chuck 432 on a wafer stage 43, where it is held by the wafer chuck 432.

[0042] In step S1002, the wafer measurement unit 421 measures the position of characteristic areas (measurement target areas) on the wafer W, and the position of the bonding target area is determined based on this. Here, the positional relationship (relative position) between the position of the characteristic areas (measurement target areas) on the wafer W and the bonding target area is known. Focus adjustment for imaging the characteristic areas on the wafer W by the wafer measurement unit 421 can be provided by providing a focus adjustment mechanism within the wafer measurement unit 421. Alternatively, focus adjustment may be provided by providing a Z-axis drive mechanism on the wafer stage 43 and driving the wafer W with respect to the Z-axis using the Z-axis drive mechanism. Alignment marks for alignment are often formed on the wafer W, but if alignment marks are not formed, characteristic areas whose positions can be identified can be measured. The control unit CNT can cause the wafer measurement unit 421 to image the characteristic areas on the wafer W and detect the relative position of the image of the characteristic areas with respect to the center of the output image of the wafer measurement unit 421 as the position of the characteristic areas (measurement target areas).

[0043] To accurately measure the relative position of the mark with respect to the reference point of the bonding apparatus BD, the offset amount may be determined in advance. This may include driving the wafer stage 43 so that the mark on the reference plate 436 is within the field of view of the wafer measuring unit 421, and measuring the position of the mark with the wafer measuring unit 421. Based on the driving position of the wafer stage 43 at that time and the position of the mark measured using the wafer measuring unit 421, the offset amount relative to the position measured using the wafer measuring unit 421 can be determined. Here, the reference point of the bonding apparatus BD is generally a specific mark position on the reference plate 436, but it may be any other location as long as it serves as a reference point.

[0044] Because the measurement range of rotation direction by the interferometer or encoder is narrow, the amount of rotation that can be corrected by the wafer stage 43 is small. Therefore, if the amount of rotation of the wafer W is large, it is desirable to correct the rotation and readjust the wafer W. If readjusted, it is necessary to measure the position of the wafer W again. In addition, the surface position (surface height) of the bonding surface of the wafer W is measured during the autofocus operation when measuring marks on the wafer, or using a first height measuring instrument (not shown). Since there is variation in the thickness of the wafer W, it is advantageous to measure the surface position of the wafer W in order to control the gap between the wafer W and the die D with high precision during the bonding operation. Here, the measurement result of the surface height of the bonding surface of the wafer W is stored in a memory unit (not shown) included in the control unit.

[0045] The wafer stage 43 is guaranteed to have its origin position, magnification, X-axis and Y-axis directions (rotation), and orthogonality using the reference plate 436. Therefore, the position of characteristic locations (locations to be measured) on the wafer W can be measured with reference to the origin position of the wafer stage 43 and the X-axis and Y-axis. The wafer W may have locations to be bonded (or semiconductor devices to be bonded) at a constant interval. These locations to be bonded (semiconductor devices) are manufactured with multiple layers positioned with high precision in semiconductor manufacturing equipment, so generally, the locations to be bonded (semiconductor devices) are arranged repeatedly at a period with nano-level precision. Therefore, in wafer alignment in step S1002, it is not necessary to measure the position of the characteristic locations corresponding to each of the locations to be bonded (semiconductor devices). Thus, the control unit CNT may be configured to perform a process (first measurement step) to determine the positions of multiple locations to be bonded by measuring the positions of fewer locations to be measured than the number of locations to be bonded and performing statistical processing of the measurement results. Here, the multiple locations to be measured can be determined based on the arrangement information of the semiconductor devices. The control unit CNT can calculate the origin position of a repeating array of multiple target locations, the amount of rotation and orthogonality in the X and Y axes, and the multiplier error of the repetition period, based on the measurement results of the positions of multiple measurement targets, in order to determine the positions of multiple target locations for joining.

[0046] Furthermore, it is desirable that the wafer chuck 432 has a temperature control function to adjust the temperature of the wafer W. This is because the thermal expansion coefficient of a silicon wafer is 3 ppm / °C, and in the case of a 300 mm diameter wafer, a 1°C increase in temperature causes the outermost edge to shift by 150 mm × 0.000003 = 0.00045 mm = 450 nm. If the bonding position shifts after wafer alignment, bonding cannot be performed with high positional accuracy, so it is desirable to stabilize the wafer temperature with an accuracy of 0.1 degrees or less.

[0047] The following describes the movement of the die as the bonding object, which is carried out in parallel with or after the loading and wafer alignment of the wafer as the bonding object. In step S2001, a dicing frame 33, in which the die D, which has been separated into individual pieces by the dicer, is arranged on a dicing tape, is loaded into the bonding apparatus BD. Here, since foreign matter adhering to the bonding surface will cause bonding failure, the dicing frame may be transported using a container that is highly airtight and kept clean. In addition, the die D on the dicing frame 33 may be washed inside the bonding apparatus BD to improve cleanliness. The rotational direction and shift position of the dicing frame 33 may be roughly positioned based on the external shape of the dicing frame by a pre-aligner (not shown).

[0048] Furthermore, the die D may be sorted as a preprocessing step. This sorting may be done, for example, by die D type or quality (rank). The sorting is performed based on information such as the arrangement of the bonding region of the wafer W and the quality information of the die D.

[0049] In step S2002, die D is picked up by multiple pickup heads 31. That is, each of the multiple pickup heads 31 holds die D. Specifically, the pickup heads 31 and release heads 32 can be positioned at the location of die D to be picked up. Then, while die D to be picked up is attracted by the pickup heads 31, the dicing tape is peeled off from die D by the release heads 32, and die D is held by the pickup heads 31. The die D to be picked up can be determined, for example, based on known good die (KGD) information transmitted online to the bonding apparatus BD. Normally, only good dies are picked up, but if a known bad die (KBD) is to be bonded to a defective device on the wafer W, the bad die will be picked up.

[0050] Furthermore, the picking may be performed based on information about the type of die D. For example, if multiple types of die D are held on the dicing frame 33, the type of die D that should be bonded to the bonding region of the wafer W to be bonded is picked up. Alternatively, the picking may be performed based on information about the quality of the die D. For example, a die D of a quality suitable for the bonding region of the wafer W to be bonded is picked up. For example, if a die D is to be bonded to a bonding region of a high-quality wafer W, the picking will be performed so that the die D is of high quality.

[0051] In step S2003, multiple dies D picked up by multiple pickup heads 31 are transported to multiple bonding heads 422, and each die D is held by a bonding head 422. When a die D is picked up by a pickup head 31, the semiconductor device surface faces the pickup head 31. On the other hand, when the die D is transported to the bonding head 422, the surface opposite to the semiconductor device surface faces the bonding head 422. The transport of the die D to the bonding head 422 may be performed directly by the pickup head 31 to the bonding head 422, or it may be done via multiple die holding parts. In addition, pre-treatment for bonding may be performed while the die D is being transported. Pre-treatment may include, for example, cleaning the die, applying adhesive in the case of bonding with adhesive, or activating the surface in the case of hybrid bonding. If the surface activity becomes inactive while the die D is being transported to the bonding head 422, it is desirable to activate the bonding surface using an atmospheric pressure plasma activation device after the bonding head 422 has held the die D.

[0052] With the above steps completed, the wafer W and die D, which are to be bonded, are held by their respective holding parts. This is a state in which each of the multiple bonding heads 422 is holding the die D.

[0053] In step S1003, the position of the die D held by the bonding head 422 may be measured. Specifically, the wafer stage 43 may be driven by the drive mechanism 435 so that characteristic parts of the die D are within the field of view of the die measurement unit 431. Focus adjustment may be provided by providing a focus adjustment mechanism within the die measurement unit 431, or by providing a Z-axis drive mechanism in the bonding head 422 and driving the die D with respect to the Z axis using the Z-axis drive mechanism. Alternatively, focus adjustment may be provided by providing a Z-axis drive mechanism in the wafer stage 43 on which the die measurement unit 431 is located, thereby driving the die measurement unit 431 with respect to the Z axis.

[0054] In the semiconductor manufacturing process, scribe lines on which alignment marks are formed can be removed by dicing. Therefore, die D often does not have alignment marks for alignment. Thus, the position of die D can be measured using the end of an array of pads or bumps placed on die D, regions with a non-periodic array that can be located, or the outer shape of the die as feature locations. The control unit CNT can cause the die measurement unit 431 to image die D and determine the position of the feature locations based on the relative position of the image of the feature locations with respect to the center of the output image of the die measurement unit 431. It is necessary to manage the offset amount when positioning die D at the bonding site based on the position of die D measured using the die measurement unit 431, and the method for doing so will be described later.

[0055] When measuring the position of die D, it is desirable to measure the positions of multiple feature points within die D and also measure the amount of rotation of die D. To measure the positions of multiple feature points, the wafer stage 43 may be driven each time the position of a feature point is measured, or the field of view of the die measurement unit 431 may be designed so that multiple feature points can be observed at once. The rotation of die D can be achieved by rotating the wafer stage 43 during bonding, but since the interferometer has a narrow measurement range in the rotation direction, if the amount of rotation of die D is large, it is desirable to correct the rotation and reposition die D. If die D is repositioned, it is necessary to measure the position of die D again. In addition, the surface position (surface height) of the bonding surface of die D is measured during the autofocus operation when measuring the die position, or using a second height measuring instrument (not shown). Since there is variation in the thickness of die D, it is advantageous to measure the surface position of die D in order to control the gap between wafer W and die D with high precision during the bonding operation. Here, the measurement result of the surface height of the bonding surface of die D is stored in a memory unit (not shown) included in the control unit. Furthermore, the heights of multiple positions on the die D may be measured, and the orientation of the die D or wafer W may be adjusted during bonding by a tilt mechanism (not shown). Such a tilt mechanism may be incorporated into the wafer stage 43, wafer chuck 432, or bonding head 422.

[0056] In step S1004, the control unit CNT determines whether simultaneous bonding by multiple bonding heads 422 is possible (determination step). This is also a step to determine whether to perform the first control or the second control described above. In other words, in the bonding process, one of the first control or the second control is performed. The first control is controlled so that at least a portion of the time when the first die held by the first holding unit is in contact with the object to be bonded and the time when the second die held by the second holding unit is in contact with the object to be bonded overlap. The second control is controlled so that the first die held by the first holding unit does not come into contact with the object to be bonded while the second die held by the second holding unit is in contact with the object to be bonded. The determination in step S1004 is made based on at least one of the following: arrangement information of the region to be bonded on the wafer W, information about the circuit pattern formed in the region to be bonded, information about the type of die D, information about its quality, information about its thickness, and information about its bonding history. The information about quality includes information about the quality of at least one of the wafer W and the die D. The thickness information includes information regarding the thickness of at least one of the wafer W and the die D.

[0057] For example, based on the arrangement information of the regions to be bonded on the wafer W (information as shown in Figure 5), the control unit CNT determines whether multiple bonding heads can bond simultaneously, that is, whether there are regions to be bonded directly beneath multiple bonding heads. If there are regions to be bonded directly beneath multiple bonding heads, it is determined that simultaneous bonding by multiple bonding heads 422 is possible. If, during the bonding process, there is no region to be bonded directly beneath any of the multiple bonding heads, it is determined that simultaneous bonding by multiple bonding heads 422 is impossible. In other words, the control unit CNT performs the second control when there is no region to be bonded on the wafer W corresponding to the first die held by the first bonding head, but there is a region to be bonded on the wafer W corresponding to the second die held by the second bonding head.

[0058] As another example, the control unit CNT determines whether multiple bonding heads can bond simultaneously based on information about the circuit pattern formed in the region to be bonded or information about the type of die D. In other words, the control unit CNT determines whether the bonding heads are holding dies of a type suitable for the region to be bonded. If the dies D held by each of the multiple bonding heads are of a type that should be bonded to the region to be bonded, it is determined that simultaneous bonding by the multiple bonding heads 422 is possible. If any of the dies D held by the multiple bonding heads are not of a type that should be bonded to the region to be bonded, it is determined that simultaneous bonding by the multiple bonding heads 422 is not possible. In the example in Figure 5, let's explain the case where it is determined whether simultaneous bonding by two bonding heads is possible for regions W2B and W2C. Assume that a die of type A should be bonded to region W2B, and a die of type B should be bonded to region W2C. In this case, if both bonding heads are holding dies of type B, it is not possible to bond the desired type of die to region W2B. In that case, the control unit CNT determines that it is not possible for multiple bonding heads to bond simultaneously. In other words, the control unit CNT performs the second control when the type of the first die is not the type corresponding to the first bonding region on the wafer W, and the type of the second die is the type corresponding to the second bonding region on the wafer W. The first die is the die held by the first bonding head, and the second die is the die held by the second bonding head. In addition, it may be determined where to bond the dies that are not bonded at this time. For example, consider the case where a die has not yet been bonded to the bonding region W2A, and a type B die should be bonded to the bonding region W2A. In such a case, it is determined that one of the type B dies held by the two bonding heads will be bonded to the bonding region W2C, and the other will be bonded to the bonding region W2A. Information regarding the circuit pattern formed in the bonding region includes, for example, a table or map information containing the name of the circuit pattern formed in the bonding region or information on the symbol assigned to the bonding region.Information regarding the type of die D includes, for example, a table or map containing information about the name of the die D or the symbol assigned to the die D. Here, the type of die D is classified by the type of circuit pattern contained in the die D, the size of the die D, etc.

[0059] As another example, based on information regarding the quality of the region to be bonded or the die D on the wafer W, the control unit CNT determines whether multiple bonding heads can bond simultaneously, that is, whether the bonding heads hold dies of a quality suitable for the region to be bonded. If the die D held by each of the multiple bonding heads is of a quality suitable for bonding to the region to be bonded, it is determined that simultaneous bonding by the multiple bonding heads 422 is possible. If any of the dies D held by the multiple bonding heads are not of a quality suitable for bonding to the region to be bonded, it is determined that simultaneous bonding by the multiple bonding heads 422 is impossible. In the example in Figure 5, let's explain the case where it is determined whether simultaneous bonding by two bonding heads is possible for regions W2B and W2C. Assume that a die of A-grade quality should be bonded to region W2B, and a die of B-grade quality should be bonded to region W2C. In this case, if both bonding heads hold B-grade dies, it is not possible to bond a die of the desired grade to region W2B. In that case, the control unit CNT determines that simultaneous bonding by multiple bonding heads is impossible. Furthermore, a determination may be made as to where to bond any dies that are not bonded at this time. For example, consider a case where a die has not yet been bonded to a bonding region W2A, and a B-grade quality die should be bonded to the bonding region W2A. In such a case, it is determined that one of the B-grade dies held by the two bonding heads will be bonded to the bonding region W2C, and the other will be bonded to the bonding region W2A. Information regarding the quality of the bonding region or die D on the wafer W includes, for example, a table or map information containing the name of the bonding region or die D, or the symbol assigned to the bonding region or die D. In other words, the control unit CNT performs the second control when the quality of the first die does not correspond to the quality of the first bonding region on the wafer W, and the quality of the second die corresponds to the quality of the second bonding region on the wafer W. The first die is the die held by the first bonding head, and the second die is the die held by the second bonding head.

[0060] As another example, the control unit CNT determines whether multiple bonding heads can bond simultaneously based on information regarding the thickness of the wafer W or die D. The information regarding thickness may be obtained by acquiring information measured by another device, or it may be information obtained using the height measuring instrument described above. For example, the thickness of the first die held by the bonding head 422a as the first holding part and the thickness of the second die held by the bonding head 422b as the second holding part may differ. If the thicknesses differ, when the bonding process is performed simultaneously by the first and second holding parts, the contact time between the workpiece (wafer W) and the first die and the contact time between the workpiece and the second die will differ, and the bonding of at least one of the first and second dies may not be performed properly. In such a case, the control unit CNT determines that multiple bonding heads cannot bond simultaneously. Also, the thickness of the first bonded region to be bonded by the first holding part and the second bonded region to be bonded by the second holding part may differ. If the thicknesses differ, performing bonding operations simultaneously in the first and second holding units will result in different contact times between the workpiece (wafer W) and the first die, as well as between the workpiece and the second die. This can lead to improper bonding of at least one of the first and second dies. In such cases, the control unit CNT determines that simultaneous bonding of multiple bonding heads is impossible. This determination may also be based on whether the thickness of the wafer W or die D is within a predetermined tolerance range. In other words, the control unit CNT performs the second control when at least one of the thicknesses of the first workpiece and the first die is outside the tolerance range, and at least one of the thicknesses of the second workpiece and the second die is within the tolerance range.

[0061] As another example, the control unit CNT determines whether multiple bonding heads can bond simultaneously based on bonding history information. For example, consider the example in Figure 5, where die D has not yet been bonded to bonded region W2B, die D has already been bonded to bonded region W2C, and one die D is to be bonded to each of bonded regions W2B and W2C. In this case, because the heights of the bonded regions W2B and W2C are different, the contact time between the bonded region and die D will differ between W2B and W2C when bonding is performed simultaneously by two bonding heads. This may result in improper bonding to at least one of the bonded regions W2B and W2C. In such cases, the control unit CNT determines that multiple bonding heads cannot bond simultaneously. In other words, the control unit CNT obtains information on the number of dies already bonded to the first bonded region to which the first die held by the first bonding head is to be bonded. Furthermore, the control unit CNT acquires information on the number of dies already bonded to the second bonding region where the second die held in the second bonding head is to be bonded. Then, if the number of dies already bonded to the first bonding region and the number of dies already bonded to the second bonding region are different, the control unit CNT performs a second control.

[0062] If it is determined in step S1004 that simultaneous bonding by multiple bonding heads 422 is possible, the process proceeds to step S1005. In step S1005, the wafer stage 43 is driven by the drive mechanism 435 so that the die D is positioned in the bonding region (bonding target area) of the wafer W, which is the object to be bonded. At this time, the control unit CNT may control the drive mechanism 435 so that the position of the wafer stage 43 is feedback controlled based on the measurement results from the interferometer 434. At this time, the control unit CNT may also determine the target position of the wafer stage 43 based on the position and rotation amount of the wafer W and the position and rotation amount of the die D, as well as the offset amount, measured in steps S1002 and S1003. Furthermore, if a shift occurs due to the bonding operation as described later, the control unit CNT also takes that amount into consideration as part of the offset amount. As mentioned above, step S1005 may also be performed by driving the bonding heads 422 so that the die D is positioned in the bonding region (bonding target area) of the wafer W, which is the object to be bonded.

[0063] In step S1006, multiple dies D are bonded to the bonding region of the wafer W (bonding process). For bonding, the bonding head 422 may move up and down, or the wafer stage 43 or wafer chuck 432 may move up and down. In other words, the drive mechanism should be driven so that the relative position (distance) between the die D held by the bonding head 422 and the wafer W held by the wafer chuck 432 changes. In the bonding process of step S1006, by changing the relative position between the multiple bonding heads and the wafer W, multiple dies held by the multiple bonding heads are bonded to multiple bonding regions of the wafer W. In other words, the control performed in step S1006 is the first control. The first control is controlled so that at least a portion of the time when the first die held by the first bonding head and the wafer W are in contact with each other overlaps with the time when the second die held by the second bonding head and the wafer W are in contact.

[0064] In bonding, multiple types of dies D may be bonded to a single wafer W, different dies D may be bonded to each region to be bonded on the wafer W, and the number of dies D bonded to each region to be bonded on the wafer W may differ.

[0065] In step S1007, the control unit CNT determines whether the bonding process of the die D to the wafer W is complete. This is equivalent to determining whether the bonding of all dies D to be bonded to the wafer W is complete. For example, consider the case where a die D is bonded to one region of the wafer W, and then another die D is bonded on top of the bonded die D. In this case, if the bonding process of the second die D to the first region of the wafer W is not complete, it is determined in step S1007 that the bonding process is not complete. If the bonding process is not complete, the process returns to step S2002, which is the pickup of the die D. In the example in Figure 4, the determination in step S1007 is made after the bonding operation in step S1006, and the pickup of the die D is performed in step S2002. However, the die pickup in step S2002 may be performed in parallel between the die measurement in step S1003 and the bonding operation in step S1006.

[0066] When the bonding of die D to all of the multiple bonding targets on wafer W is completed, in step S1008, wafer W is discharged from bonding apparatus BD. Wafer W may be returned to the FOUP into which it was loaded, or it may be returned to another container. However, generally, since bonding changes the thickness of the wafer and it is necessary to widen the gap between wafers compared to the wafer before bonding, it is returned to another container.

[0067] If it is determined in step S1004 that simultaneous bonding by multiple bonding heads 422 is impossible, the control unit CNT selects a bonding head (die to be used for bonding) to be used for bonding. In other words, it selects a bonding head to be retracted. This selection is made based on at least one of the following: arrangement information of the regions to be bonded on the wafer W, information on the circuit patterns formed in the regions to be bonded, information on the type of die D, information on its quality, information on its thickness, and information on its bonding history. The quality information includes information on the quality of at least one of the wafer W and die D. The thickness information includes information on the thickness of at least one of the wafer W and die D. For example, if simultaneous bonding is possible for two of the three bonding heads and not for one bonding head, only the bonding head that cannot be bonded simultaneously is retracted. Alternatively, if only one of the two bonding heads can bond, the other bonding head is retracted. Alternatively, as shown in Figure 5, when joining only one region to be joined (W2A), the bonding heads other than the one used for joining are retracted.

[0068] Next, based on the selected result, the control unit CNT retracts the bonding head (S1009). This retraction of the bonding head is performed, for example, by driving the bonding head to be retracted in the +Z direction, so that the die D held by the retracted bonding head does not come into contact with other components during the bonding process of the bonding head used for bonding. In other words, the bonding head to be retracted is moved in a direction perpendicular to the bonding surface on the wafer W (Z axis direction) and away from the wafer W (+Z direction). The amount of movement at this time is, for example, a distance greater than or equal to the sum of the thickness of the first die held by the first bonding head and the thickness of the wafer W. Alternatively, when the bonding head moves in the -Z direction to perform the bonding process, the retraction operation can be achieved by moving only the bonding head used for bonding in the -Z direction and not moving the bonding head to be retracted in the -Z direction. In other words, the bonding head to be retracted remains stopped at a position further away from the wafer W than the bonding head performing the bonding process. The bonding head that performs the bonding process moves in a direction perpendicular to the bonding surface of the wafer W (Z-axis direction) and in a direction approaching the wafer W (-Z direction). Alternatively, the bonding head to be retracted is moved on the XY plane to prevent the die D held by the retracted bonding head from coming into contact with other components during the bonding process of the bonding head used for bonding. In other words, the bonding head to be retracted is moved in a direction parallel to the bonding surface of the wafer W (direction on the XY plane). If the bonding head is retracted by moving the bonding head, a drive mechanism for moving the bonding head may be provided. The movement of the bonding head in the direction on the XY plane is, for example, such as the first bonding head moving to a position where it does not overlap with the wafer W in a direction perpendicular to the bonding surface of the wafer W (Z-axis direction). In step S1009, the bonding head to be retracted may be moved in a plurality of directions, including a direction perpendicular to the bonding surface of the workpiece (Z-axis direction, +Z direction) and a direction parallel to the bonding surface of the workpiece (direction on the XY plane).

[0069] When performing bonding by moving the wafer W in the +Z direction by driving the wafer stage 43, the distance in the Z-axis direction between the die D held by each of the multiple bonding heads and the wafer W (wafer stage 43) changes by the amount of driving of the wafer stage 43. This is the case when the wafer stage 43 (third holding part) is moved to bring the wafer stage 43 (wafer W) closer to the die D. Therefore, when performing bonding by moving the wafer W in the +Z direction by driving the wafer stage 43, it is advantageous to move the bonding head. Specifically, it is advantageous to drive the bonding head in the +Z direction to retract the bonding head or to move the bonding head on the XY plane to retract the bonding head. Figure 6 shows an example in which the bonding head is retracted from the wafer W in the Z-axis direction. This is a retraction method that can be achieved by driving the bonding head to be retracted in the +Z direction or by moving only the bonding head used for bonding in the -Z direction to perform the bonding process. Figure 7 shows an example in which the bonding head is retracted from the wafer W on the XY plane. This is a method of retracting the bonding head by moving it along the XY plane. The XY plane is the plane on the wafer W (on the object to be bonded) that is parallel to the plane on which the bonding region is located, and the Z axis is perpendicular to the XY plane.

[0070] Next, the wafer stage 43 is driven by the drive mechanism 435 so that the die D to be bonded is positioned on the bonded region (bonding target area) of the wafer W to be bonded (S1010). Step S1010 may also be performed by driving the bonding head.

[0071] Next, the die D is bonded to the bonding region of the wafer W (S1011, bonding process). For bonding, the bonding head 422 may move up and down, or the wafer stage 43 or wafer chuck 432 may move up and down. In other words, the drive mechanism should be driven so that the relative position (distance) between the die D held by the bonding head 422 and the wafer W held by the wafer chuck 432 changes. In the bonding process of step S1006, by changing the relative position between the multiple bonding heads and the wafer W, multiple dies held by the multiple bonding heads are bonded to multiple bonding regions of the wafer W. On the other hand, in step S1011, since the bonding head that was retracted in step S1009 is in the retracted position, the retracted bonding head and the die D held by it do not come into contact with (interfere with) other components during the bonding operation of step S1011. In other words, the control performed in step S1011 (and step S1009) is second control. The second control prevents the first die, held by the first bonding head, from coming into contact with the wafer W while the second die, held by the second bonding head, is in contact with the wafer W.

[0072] Next, it is determined whether any of the bonding heads are holding a die D (S1012). If none of the bonding heads are holding a die D, the process proceeds to step S1007. If any of the bonding heads are holding a die D, the process proceeds to step S1013. In step S1013, it is determined whether or not it is necessary to retract the bonding heads. For example, if only one of the bonding heads is holding a die D, and the bonding process can be performed properly without retracting the bonding heads that are not holding a die D, it is determined that retraction is not necessary. Alternatively, if multiple bonding heads are each holding a die D, but it is determined that these bonding heads can bond simultaneously, it is determined that retraction is not necessary. This determination is the same as the determination in step S1004.

[0073] If it is determined in step S1013 that evacuation is necessary, proceed to step S1009. If it is determined in step S1013 that evacuation is not necessary, proceed to step S1010.

[0074] According to this embodiment, multiple bonding heads can simultaneously hold dies D, and the bonding process can be performed by switching between simultaneous bonding and non-simultaneous bonding based on information. This reduces the time required for pickup operations and transfer operations to the bonding heads compared to repeatedly picking up only dies D that can be bonded simultaneously or individually. Furthermore, there is no need to adjust the layout of the bonding area on the wafer W to match the arrangement and number of bonding heads.

[0075] <Second Embodiment> This embodiment relates to a method for manufacturing articles, characterized by manufacturing articles using the aforementioned joining device BD.

[0076] Figure 8 is a flowchart showing the method for manufacturing an article in this embodiment. First, the first holding part holds the first die, and the second holding part holds the second die (S3001, holding step). Next, the first die and the second die are joined to the workpiece (S3002, joining step). Then, the workpiece to which the first die and the second die have been joined in the joining step is processed (S3003, processing step).

[0077] Furthermore, during the joining process, either the first control or the second control is performed. The first control ensures that at least a portion of the time when the first die held by the first holding part is in contact with the workpiece and the time when the second die held by the second holding part is in contact with the workpiece overlap. The second control ensures that while the second die held by the second holding part is in contact with the workpiece, the first die held by the first holding part does not come into contact with the workpiece.

[0078] The articles manufactured using this method include, for example, semiconductor IC elements, liquid crystal display elements, color filters, MEMS, LEDs, sensors, and optical devices. According to the article manufacturing method of this embodiment, the time required for the reciprocating movement of the die for pickup in bonding using multiple bonding heads can be reduced.

[0079] The disclosures herein include the following joining devices, joining methods, and methods for manufacturing articles.

[0080] (Item 1) A bonding apparatus for bonding multiple dies to an object to be bonded, A first retaining part that holds the first die, A second retaining part, which holds the second die and is different from the first retaining part, The system comprises a first holding unit and a control unit that controls the position of the second holding unit, The control unit, A first control that controls the time during which the first die held by the first holding part and the workpiece are in contact with each other and the time during which the second die held by the second holding part and the workpiece are in contact with each other to overlap, A second control that controls the first die, held by the first holding part, so as not to come into contact with the workpiece while the second die, held by the second holding part, and the workpiece are in contact, A bonding device characterized by its ability to switch between modes.

[0081] (Item 2) It further has a third holding part for holding the object to be joined, The joining apparatus according to item 1, characterized in that when joining the die to the object to be joined, the third holding portion moves to approach the die.

[0082] (Item 3) The joining device according to item 1, characterized in that, in the second control, the first holding part moves in a direction perpendicular to the joining surface of the workpiece and away from the workpiece.

[0083] (Item 4) The joining device according to item 1, characterized in that, in the second control, the first holding part remains stopped at a position further away from the work to be joined than the second holding part, and the second holding part moves in a direction perpendicular to the joining surface of the work to be joined, and in a direction approaching the work to be joined.

[0084] (Item 5) The joining device according to item 1, characterized in that, in the second control, the first holding part moves in a direction parallel to the joining surface of the object to be joined.

[0085] (Item 6) The joining device according to item 1, characterized in that, in the second control, the first holding part moves in a plurality of directions including a direction perpendicular to the joining surface of the objects to be joined and a direction parallel to the joining surface of the objects to be joined.

[0086] (Item 7) The bonding apparatus according to item 1, characterized in that the control unit switches between the first control and the second control based on at least one of the following: arrangement information of the region to be bonded of the object to be bonded, information regarding a circuit pattern formed in the region to be bonded, information regarding the type of die, information regarding the quality of the region to be bonded, information regarding the quality of the die, information regarding the thickness of the object to be bonded, information regarding the thickness of the die, and information regarding the bonding history.

[0087] (Item 8) The bonding apparatus according to item 1, characterized in that the control unit switches between the first control and the second control based on at least one of the following: information relating to the thickness of the workpiece to be bonded and information relating to the thickness of the die, which are information based on the measurement results of a height measuring device.

[0088] (Item 9) The bonding apparatus according to item 1, characterized in that the control unit performs the second control when there is no bonding region on the workpiece corresponding to the first die held in the first holding unit.

[0089] (Item 10) The bonding apparatus according to item 1, characterized in that the control unit performs the second control when the type of the first die held in the first holding unit is not of a type corresponding to the area to be bonded on the workpiece.

[0090] (Item 11) The bonding apparatus according to item 1, characterized in that the control unit performs the second control when the quality of the first die held in the first holding unit is not of the quality corresponding to the bonding region on the workpiece.

[0091] (Item 12) The bonding apparatus according to item 1, characterized in that the control unit performs the second control when at least one of the thicknesses of the workpiece to be bonded and the thickness of the first die is outside the allowable range.

[0092] (Item 13) The bonding apparatus according to item 1, characterized in that the control unit performs the second control when the number of dies already bonded to the first bonding region for bonding the first die held in the first holding unit and the number of dies already bonded to the second bonding region for bonding the second die held in the second holding unit are different from each other.

[0093] (Item 14) The bonding apparatus according to item 1, characterized in that, in the first control, the timing at which the first die held in the first holding part begins to contact the work to be bonded is the same as the timing at which the second die held in the second holding part begins to contact the work to be bonded.

[0094] (Item 15) The bonding apparatus according to item 3, characterized in that, in the second control, the amount of movement of the first holding portion in a direction perpendicular to the bonding surface of the workpiece and away from the workpiece is a distance greater than or equal to the sum of the thickness of the first die held by the first holding portion and the thickness of the workpiece.

[0095] (Item 16) The joining device according to item 5, characterized in that, in the second control, the first holding part moves to a position where the first holding part and the object to be joined do not overlap in a direction perpendicular to the joining surface of the object to be joined.

[0096] (Item 17) A joining method for joining multiple dies to an object to be joined, A holding step in which the first holding part holds the first die and the second holding part holds the second die, The process includes joining the first die and the second die to the workpiece to be joined, In the aforementioned joining process, A first control that controls the time during which the first die held by the first holding part and the workpiece are in contact with each other and the time during which the second die held by the second holding part and the workpiece are in contact with each other to overlap, A second control that controls the first die, held by the first holding part, so as not to come into contact with the workpiece while the second die, held by the second holding part, and the workpiece are in contact, A joining method characterized in that one of the following is controlled.

[0097] (Item 18) A holding step in which the first holding part holds the first die and the second holding part holds the second die, A joining process for joining the first die and the second die to the workpiece, The process includes processing the workpiece formed by joining the first die and the second die in the joining process, In the aforementioned joining process, A first control that controls the time during which the first die held by the first holding part and the workpiece are in contact with each other and the time during which the second die held by the second holding part and the workpiece are in contact with each other to overlap, A second control that controls the first die, held by the first holding part, so as not to come into contact with the workpiece while the second die, held by the second holding part, and the workpiece are in contact, A method for manufacturing an article, characterized in that one of the following controls is performed.

[0098] The invention is not limited to the embodiments described above, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, claims are attached to disclose the scope of the invention.

Claims

1. A bonding apparatus for bonding multiple dies to an object to be bonded, A first holding part that holds the first die, A second holding portion, which holds the second die and is different from the first holding portion, The system comprises a first holding unit and a control unit that controls the position of the second holding unit, The control unit, A first control that controls the time during which the first die held by the first holding part and the workpiece are in contact with each other and the time during which the second die held by the second holding part and the workpiece are in contact with each other to overlap, A second control that controls the first die, held by the first holding part, so as not to come into contact with the workpiece while the second die, held by the second holding part, and the workpiece are in contact, A bonding device characterized by its ability to switch between modes.

2. It further has a third holding part for holding the object to be joined, The joining apparatus according to claim 1, characterized in that the third holding portion moves to approach the die when joining the object to be joined.

3. The joining device according to claim 1, characterized in that, in the second control, the first holding portion moves in a direction perpendicular to the joining surface of the objects to be joined, and in a direction away from the objects to be joined.

4. The joining device according to claim 1, characterized in that, in the second control, the first holding part remains stopped at a position further away from the work to be joined than the second holding part, and the second holding part moves in a direction perpendicular to the joining surface of the work to be joined, and in a direction approaching the work to be joined.

5. The joining device according to claim 1, characterized in that, in the second control, the first holding part moves in a direction parallel to the joining surface of the object to be joined.

6. The joining device according to claim 1, characterized in that, in the second control, the first holding portion moves in a plurality of directions including a direction perpendicular to the joining surface of the objects to be joined and a direction parallel to the joining surface of the objects to be joined.

7. The bonding apparatus according to claim 1, wherein the control unit switches between the first control and the second control based on at least one of the following: arrangement information of the region to be bonded of the object to be bonded, information regarding a circuit pattern formed in the region to be bonded, information regarding the type of die, information regarding the quality of the region to be bonded, information regarding the quality of the die, information regarding the thickness of the object to be bonded, information regarding the thickness of the die, and information regarding the bonding history.

8. The bonding apparatus according to claim 1, characterized in that the control unit switches between the first control and the second control based on at least one of the following: information relating to the thickness of the workpiece to be bonded, which is information based on the measurement results of a height measuring device, and information relating to the thickness of the die.

9. The bonding apparatus according to claim 1, characterized in that the control unit performs the second control when there is no area to be bonded on the workpiece corresponding to the first die held in the first holding unit.

10. The bonding apparatus according to claim 1, characterized in that the control unit performs the second control when the type of the first die held in the first holding unit is not of a type corresponding to the area to be bonded on the workpiece.

11. The bonding apparatus according to claim 1, characterized in that the control unit performs the second control when the quality of the first die held in the first holding unit is not of the quality corresponding to the bonding region on the workpiece.

12. The bonding apparatus according to claim 1, characterized in that the control unit performs the second control when at least one of the thicknesses of the workpiece to be bonded and the thickness of the first die is outside the allowable range.

13. The bonding apparatus according to claim 1, characterized in that the control unit performs the second control when the number of dies already bonded to the first bonding region for bonding the first die held in the first holding portion and the number of dies already bonded to the second bonding region for bonding the second die held in the second holding portion are different from each other.

14. The bonding apparatus according to claim 1, characterized in that, in the first control, the timing at which the first die held in the first holding portion begins to contact the workpiece to be bonded is the same as the timing at which the second die held in the second holding portion begins to contact the workpiece to be bonded.

15. The joining apparatus according to claim 3, characterized in that, in the second control, the amount of movement of the first holding portion in a direction perpendicular to the joining surface of the workpiece and away from the workpiece is a distance greater than or equal to the sum of the thickness of the first die held by the first holding portion and the thickness of the workpiece.

16. The joining apparatus according to claim 5, characterized in that, in the second control, the first holding part moves to a position where the first holding part and the object to be joined do not overlap in a direction perpendicular to the joining surface of the object to be joined.

17. A joining method for joining multiple dies to an object to be joined, A holding step in which the first holding part holds the first die and the second holding part holds the second die, The process includes joining the first die and the second die to the workpiece to be joined, In the aforementioned joining process, A first control that controls the time during which the first die held by the first holding part and the workpiece are in contact with each other and the time during which the second die held by the second holding part and the workpiece are in contact with each other to overlap, A second control that controls the first die, held by the first holding part, so as not to come into contact with the workpiece while the second die, held by the second holding part, and the workpiece are in contact, A joining method characterized in that one of the following is controlled.

18. A holding step in which the first holding part holds the first die and the second holding part holds the second die, A joining process in which the first die and the second die are joined to an object to be joined, The process includes processing the workpiece into which the first die and the second die have been joined in the joining process, In the aforementioned joining process, A first control that controls the time during which the first die held by the first holding part and the workpiece are in contact with each other and the time during which the second die held by the second holding part and the workpiece are in contact with each other to overlap, A second control that controls the first die, held by the first holding part, so as not to come into contact with the workpiece while the second die, held by the second holding part, and the workpiece are in contact, A method for manufacturing an article, characterized in that one of the following controls is performed.

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