Wiring board and its manufacturing method

Abstract

The thickness of the wiring board containing semiconductor switching elements and Rogowski coils is reduced. [Solution] A wiring board incorporates a semiconductor switching element, a connecting wire, a current detection wire connected to the semiconductor switching element via the connecting wire, and a Rogowski coil for detecting the current flowing through the current detection wire. The wiring board has a first layer located within the range of the semiconductor switching element in the thickness direction of the wiring board, and a second layer located within the range between the surface of the wiring board and the semiconductor switching element in the thickness direction. The connecting wire is arranged in the second layer. At least a portion of the Rogowski coil is arranged in the first layer.

Description

Technical Field

[0001] The technology disclosed in the present specification relates to a wiring board and a method for manufacturing the same.

[0002] Patent Document 1 discloses a wiring board with a built-in Rogowski coil. The Rogowski coil is configured by multilayer wiring (for example, conductor films and vias) inside the wiring board. The Rogowski coil detects a current flowing in a current path.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Wiring boards with a built-in semiconductor switching element exist. For this type of wiring board, there is a need to detect the current flowing through the semiconductor switching element. By providing a multilayer wiring including a Rogowski coil in the upper layer of the semiconductor switching element, the current flowing through the semiconductor switching element can be detected.

[0005] Since the Rogowski coil has a spiral structure, the thickness of the multilayer wiring having the Rogowski coil is large. If the multilayer wiring including the Rogowski coil is provided on the upper part of the semiconductor switching element, the thickness of the Rogowski coil is added to the thickness of the semiconductor switching element, so that the entire wiring board becomes thick. The present specification proposes a technology for reducing the thickness of a wiring board incorporating a semiconductor switching element and a Rogowski coil.

Means for Solving the Problems

[0006] The wiring board disclosed herein incorporates a semiconductor switching element, a connecting wire, a current detection wire connected to the semiconductor switching element via the connecting wire, and a Rogowski coil for detecting the current flowing through the current detection wire. The wiring board has a first layer located within the range of the semiconductor switching element in the thickness direction of the wiring board, and a second layer located within the range between the surface of the wiring board and the semiconductor switching element in the thickness direction. The connecting wire is disposed within the second layer. At least a portion of the Rogowski coil is disposed within the first layer.

[0007] In this configuration, the Rogowski coil can detect the current flowing through the current detection wiring (i.e., the current flowing through the semiconductor switching element). Furthermore, since at least a portion of the Rogowski coil is located within the first layer (i.e., within the range of the semiconductor switching element in the thickness direction), the second layer can be made thinner. As a result, the overall thickness of the wiring board can be reduced. [Brief explanation of the drawing]

[0008] [Figure 1] Cross-sectional view of the wiring board of Example 1. [Figure 2] Circuit diagram of the wiring board of Example 1. [Figure 3] A schematic diagram showing the structure of a Rogowski coil. [Figure 4] A top view of the wiring board of Example 1. [Figure 5] An explanatory diagram of the manufacturing method of the wiring board in Example 1. [Figure 6] An explanatory diagram of the manufacturing method of the wiring board in Example 1. [Figure 7] An explanatory diagram of the manufacturing method of the wiring board in Example 1. [Figure 8] Cross-sectional view of the wiring board of Example 2. [Figure 9] Cross-sectional view of the wiring board of Example 3. [Figure 10] A top view of the wiring board of Example 3. [Figure 11]Cross-sectional view of the wiring board of Example 4. [Modes for carrying out the invention] [Examples]

[0009] The wiring board 11 of Embodiment 1 shown in Figure 1 is a so-called printed circuit board. The wiring board 11 contains a semiconductor switching element 12, a semiconductor switching element 14, and a Rogowski coil 80. The wiring board 11 constitutes the circuit shown in Figure 2. The circuit in Figure 2 is part of an inverter circuit. Each of the semiconductor switching elements 12 and 14 has a MOSFET (metal oxide semiconductor field effect transistor) 16 and a diode 18. In each of the semiconductor switching elements 12 and 14, the anode of the diode 18 is connected to the source of the MOSFET 16, and the cathode of the diode 18 is connected to the drain of the MOSFET 16. The drain of the semiconductor switching element 12 is connected to a high-potential input terminal P to which a high potential is input. The source of the semiconductor switching element 12 is connected to the drain of the semiconductor switching element 14. The source of the semiconductor switching element 14 is connected to a low-potential input terminal N to which a low potential is input. In addition, the source of the semiconductor switching element 12 and the drain of the semiconductor switching element 14 are connected to an output terminal O. An external inductive load 100 (for example, an electric motor) is connected to the output terminal O. The wiring board 11 changes the direction and magnitude of the current flowing to the inductive load 100 by switching the semiconductor switching elements 12 and 14. The Rogowski coil 80 is provided in the wiring between the source of the semiconductor switching element 14 and the low-potential input terminal N, and detects the current flowing through this wiring. The Rogowski coil 80 has detection terminals S1 and S2.

[0010] As shown in Figure 1, the wiring board 11 has a support layer 20 made of an insulator. The lower surface of the support layer 20 is covered with a metal layer 22. A core 24 is fixed to the upper surface of the support layer 20. The core 24 is made of an insulator and has a frame shape. The semiconductor switching elements 12 and 14 are arranged on the inner circumference side of the core 24 and are fixed to the upper surface of the support layer 20. The semiconductor switching elements 12 and 14 are each made of a semiconductor substrate. A drain electrode D and a source electrode S are provided on the upper surfaces of the semiconductor switching elements 12 and 14. Although not shown, gate electrodes are also provided on the upper surfaces of the semiconductor switching elements 12 and 14.

[0011] As shown in Figure 1, the wiring board 11 has a current sensing component 82. The current sensing component 82 is a component that makes up part of the Rogowski coil 80. The current sensing component 82 is located on the inner circumference side of the core 24 and is fixed to the upper surface of the support layer 20.

[0012] The semiconductor switching elements 12 and 14, the current sensing component 82, and the core 24 are arranged on the support layer 20 with gaps between them. An insulating resin layer 26 is embedded in the gaps between the semiconductor switching elements 12 and 14, the current sensing component 82, and the core 24.

[0013] A multilayer wiring section 50 is provided on the upper part of the semiconductor switching elements 12 and 14, the current detection component 82, and the core 24. The multilayer wiring section 50 has a laminated structure in which multiple patterned wiring layers are stacked. An insulating layer is provided between each wiring layer of the multilayer wiring section 50. The wiring layers of the multilayer wiring section 50 are electrically connected via vias provided in the insulating layer. The upper surface of the multilayer wiring section 50 is covered with a resist film 40, which is an insulator. Multiple openings are provided in the resist film 40. The wiring layers exposed in each opening constitute a high-potential input terminal P, a low-potential input terminal N, and an output terminal O. The high-potential input terminal P, the low-potential input terminal N, and the output terminal O are exposed on the upper surface 11u of the wiring board 11. In addition, although not shown, detection terminals S1 and S2 of the Rogowski coil 80 are provided on the upper surface 11u of the wiring board 11.

[0014] In the following, the thickness direction of the wiring board 11 will be referred to as the z direction, one direction in a plane parallel to the wiring board 11 will be referred to as the x direction, and the direction perpendicular to the x direction in the said plane will be referred to as the y direction.

[0015] Furthermore, in the following description, the portion of the wiring board 11 located within the range of the semiconductor switching elements 12 and 14 in the z-direction (i.e., within the range below the upper surface of the semiconductor substrate and above the lower surface of the semiconductor substrate) is referred to as the first layer 31. Furthermore, in the following description, the portion of the wiring board 11 located within the range between the upper surface 11u of the wiring board 11 and the semiconductor switching elements 12 and 14 in the z-direction is referred to as the second layer 32. In this embodiment, the current detection component 82 and the core 24 are arranged within the first layer 31.

[0016] Next, the current detection component 82 and the laminated wiring portion 50 will be described in detail. The current detection component 82 is a component having a laminated wiring structure similar to that of a printed wiring board, and has a plurality of wirings therein. A spiral wiring 83 and an axial wiring 84 are provided inside the current detection component 82. FIG. 3 schematically shows the spiral wiring 83 and the axial wiring 84. As shown in FIG. 3, the spiral wiring 83 includes a plurality of upper wirings 83a, a plurality of vertical wirings 83b, a plurality of lower wirings 83c, and a plurality of vertical wirings 83d. The upper wiring 83a extends while being slightly inclined with respect to the x direction. The vertical wiring 83b extends downward from the end of the upper wiring 83a in the +x direction. The lower wiring 83c extends in the -x direction from the lower end of the vertical wiring 83b. The vertical wiring 83d extends upward from the end of the lower wiring 83c in the -x direction. The upper wiring 83a, the vertical wiring 83b, the lower wiring 83c, and the vertical wiring 83d form one turn of spiral wiring. The spiral wiring 83 is formed by repeatedly providing one turn of spiral wiring in the y direction. The central axis of the spiral wiring 83 extends along the y direction. The axial wiring 84 extends along the central axis of the spiral wiring 83.

[0017] As shown in FIG. 1, a current detection wiring 90 is provided inside the current detection component 82. The current detection wiring 90 is arranged above the spiral wiring 83 and extends along the x direction.

[0018] The second layer 32 above the current detection component 82 is provided with a spiral wiring 85 and an axial wiring 86. Figure 3 schematically shows the spiral wiring 85 and the axial wiring 86. As shown in Figure 3, the spiral wiring 85 has a plurality of upper wirings 85a, a plurality of vertical wirings 85b, a plurality of lower wirings 85c, and a plurality of vertical wirings 85d. The vertical wirings 85b and 85d are constituted by vias. The upper wiring 85a extends slightly inclined with respect to the x direction. The vertical wiring 85b extends downward from the end of the upper wiring 85a in the +x direction. The lower wiring 85c extends in the -x direction from the lower end of the vertical wiring 85b. The vertical wiring 85d extends upward from the end of the lower wiring 83c in the -x direction. The upper wiring 85a, the vertical wiring 85b, the lower wiring 85c, and the vertical wiring 85d form one turn of spiral wiring. The spiral wiring 85 is formed by repeatedly providing one turn of spiral wiring in the y direction. The central axis of the spiral wiring 85 extends along the y direction. The axial wiring 86 extends along the central axis of the spiral wiring 85.

[0019] As shown in Figures 1 and 3, the spiral wiring 85 is arranged above the spiral wiring 83. The end T1 of the spiral wiring 83 in the +y direction is connected to the detection terminal S1 (see Figure 2). The end of the spiral wiring 83 in the -y direction is connected to the end of the spiral wiring 85 in the -y direction by a wiring 89a extending in the vertical direction. The end of the spiral wiring 85 in the +y direction is connected to the end of the axial wiring 86 in the +y direction. The end of the axial wiring 86 in the -y direction is connected to the end of the axial wiring 84 in the -y direction by a wiring 89b extending in the z direction. The end T2 of the axial wiring 84 in the +y direction is connected to the detection terminal S2 (see Figure 2). A Rogowski coil 80 is formed by the spiral wiring 83, the axial wiring 84, the spiral wiring 85, the axial wiring 86, and the wirings connecting these components.

[0020] As shown in Figures 1 and 4, the current detection wiring 90 is arranged below the spiral wiring 85. That is, the current detection wiring 90 is arranged between the spiral wiring 83 and the spiral wiring 85.

[0021] As shown in Figure 1, a high-potential input wiring 91 is provided on the surface layer of the stacked wiring section 50. One end of the high-potential input wiring 91 is connected to the high-potential input terminal P. The other end of the high-potential input wiring 91 is connected to the drain electrode D of the semiconductor switching element 12 by a via. In other words, the high-potential input wiring 91 interconnects the high-potential input terminal P and the drain electrode D of the semiconductor switching element 12.

[0022] An intermediate wiring 92 is provided in the middle of the stacked wiring section 50. One end of the intermediate wiring 92 is connected to the source electrode S of the semiconductor switching element 12 by a via. The other end of the intermediate wiring 92 is connected to the drain electrode D of the semiconductor switching element 14 by a via. The intermediate wiring 92 also has a branch section 92a. The branch section 92a is connected to the output terminal O by a via. In other words, the intermediate wiring 92 interconnects the source electrode S of the semiconductor switching element 12, the drain electrode D of the semiconductor switching element 14, and the output terminal O.

[0023] A connecting wire 94 is provided in the middle of the stacked wiring section 50. One end of the connecting wire 94 is connected to the source electrode S of the semiconductor switching element 14 by a via. The other end of the connecting wire 94 is connected to one end of the current detection wire 90 by a via. The other end of the current detection wire 90 is connected to the low-potential input terminal N by a via. In other words, the source electrode S of the semiconductor switching element 14 is connected to the low-potential input terminal N via the connecting wire 94 and the current detection wire 90.

[0024] As described above, the semiconductor switching elements 12, 14 and the Rogowski coil 80 are electrically connected to each other by the wiring within the stacked wiring section 50, thereby forming the circuit shown in Figure 2.

[0025] When the MOSFET 16 of the semiconductor switching element 14 is turned on, current flows from the semiconductor switching element 14 to the low-potential input terminal N via the connecting wiring 94 and the current detection wiring 90. Also, when the diode 18 of the semiconductor switching element 14 is turned on, current flows from the low-potential input terminal N to the semiconductor switching element 14 via the current detection wiring 90 and the connecting wiring 94. In this way, current flows bidirectionally through the current detection wiring 90. The Rogowski coil 80 can detect the current flowing through the current detection wiring 90 (i.e., the current flowing through the semiconductor switching element 14). In Embodiment 1, spiral wirings 83 and 85 are provided above and below the current detection wiring 90, so the sensitivity of the Rogowski coil 80 is high, and the current flowing through the current detection wiring 90 can be detected with high accuracy.

[0026] Furthermore, in Embodiment 1, the lower portion of the Rogowski coil 80 (i.e., the spiral wiring 83 and the axial wiring 84) is provided in the first layer 31, which is in the same depth range as the semiconductor switching elements 12 and 14. Therefore, only the upper portion of the Rogowski coil 80 (i.e., the spiral wiring 85 and the axial wiring 86) is provided in the second layer 32, which is above the semiconductor switching elements 12 and 14. This allows the second layer 32 to be made thinner. As a result, the entire wiring board 11 can be made thinner. Because the second layer 32 is thin, warping of the wiring board 11 can be suppressed. Also, with this configuration, the number of layers of the laminated wiring section 50 provided in the second layer 32 can be reduced, thus reducing the manufacturing cost of the wiring board 11. In addition, when the lower portion of the Rogowski coil 80 is provided in the first layer 31 in this way, there is more space for the Rogowski coil 80 to be placed, so a wide gap can be provided between the upper wiring 83a and the lower wiring 83c of the spiral wiring 83. This increases the effective radius of the spiral portion of the Rogowski coil 80, thereby improving the detection sensitivity of the Rogowski coil 80.

[0027] Next, the manufacturing method of the wiring board 11 of Example 1 will be described. First, prepare the substrate shown in Figure 5. The substrate shown in Figure 5 has a support layer 20, a metal layer 22, and a core 24. The core 24 is fixed to the upper surface of the support layer 20. As described above, the core 24 has a frame shape. The support layer 20 is reinforced by the core 24. The lower surface of the support layer 20 is covered by the metal layer 22.

[0028] In addition to the circuit board shown in Figure 5, a current detection component 82, as shown in Figure 6, is prepared. The current detection component 82 has a structure in which a spiral wiring 83, a shaft wiring 84, and a current detection wiring 90 are embedded inside an insulator 88. The spiral wiring 83, shaft wiring 84, and current detection wiring 90 are electrically connectable to the outside. Furthermore, the lower wiring 85c of the spiral wiring 85 is provided on the upper surface of the insulator 88. The current detection component 82 is manufactured using printed circuit board manufacturing technology.

[0029] Next, as shown in Figure 7, semiconductor switching elements 12 and 14 and current detection component 82 are mounted on the upper surface of the support layer 20 on the inner circumference side of the core 24.

[0030] Next, as shown in Figure 1, a laminated wiring section 50 is formed on top of the semiconductor switching elements 12, 14, the current detection component 82, and the core 24. The laminated wiring section 50 is manufactured using printed circuit board manufacturing technology. When forming the laminated wiring section 50, resin flows from the prepreg into the first layer 31, and an insulating resin layer 26 is filled into the gaps between the semiconductor switching elements 12, 14, the current detection component 82, and the core 24. By forming the laminated wiring section 50, the Rogowski coil 80 is completed, and each element is connected as shown in Figure 2. After that, a resist film 40 is formed on the surface of the laminated wiring section 50, completing the wiring board 11.

[0031] As described above, this manufacturing method makes it possible to manufacture a wiring board 11 in which a portion of the Rogowski coil 80 is provided within the first layer 31. [Examples]

[0032] In the wiring board 11a of Embodiment 2 shown in Figure 8, the configuration of the Rogowski coil 80 and the current detection wiring 90 differs from that of Embodiment 1. The other configurations of Embodiment 2 are the same as those of Embodiment 1.

[0033] In Embodiment 2, the Rogowski coil 80 is composed of a spiral wiring 83 and an axial wiring 84 provided on the current sensing component 82. That is, in Embodiment 2, the spiral wiring 85 and axial wiring 86 are not provided above the spiral wiring 83. The Rogowski coil 80 (i.e., the spiral wiring 83 and axial wiring 84) may be provided only within the first layer 31, or it may be provided so as to span the first layer 31 and the second layer 32.

[0034] Furthermore, in Embodiment 2, the current detection component 82 does not have a current detection wiring 90. In Embodiment 2, the source electrode S of the semiconductor switching element 14 is connected to the low-potential input terminal N by wiring 98 that extends linearly in the x-direction and is provided within the second layer 32. Of the wiring 98, the portion facing the spiral wiring 83 is the current detection wiring 90. Also, of the wiring 98, the portion connecting the current detection wiring 90 and the source electrode S of the semiconductor switching element 14 is the connection wiring 94. In other words, in Embodiment 2, the current detection wiring 90 and the connection wiring 94 are arranged within the second layer 32.

[0035] In Example 2, the Rogowski coil 80 can detect the current flowing through the current detection wiring 90. Also in Example 2, since all or part of the Rogowski coil 80 is provided on the first layer 31, the second layer 32 can be made thinner, and the wiring board 11a can be made thinner. [Examples]

[0036] In the wiring board 11b of Embodiment 3 shown in Figures 9 and 10, the configuration of the Rogowski coil 80 and the current detection wiring 90 differs from that of Embodiment 1. The other configurations of Embodiment 3 are the same as those of Embodiment 1.

[0037] In Example 3, as shown in Figure 10, the central axis of the spiral wiring 83 extends in an annular shape when viewed along the z-direction. Furthermore, the axial wiring 84 in Example 3 extends circularly along the central axis of the spiral wiring 83 (i.e., the central axis of the annular shape). Also, the current detection wiring 90 in Example 3 extends along the z-direction within the area enclosed by the annular spiral wiring 83. More specifically, the current detection wiring 90 in Example 3 extends linearly along the z-direction at the center of the annular spiral wiring 83. As shown in Figure 9, the upper end of the current detection wiring 90 is connected to the source electrode S of the semiconductor switching element 14 via the connecting wiring 94. Additionally, a wiring 89c extending in the x-direction is provided on the lower surface of the current detection component 82. Furthermore, a wiring 89d extending along the z-direction is provided inside the current detection component 82. The lower end of the current detection wiring 90 is connected to the low-potential input terminal N via wirings 89c, 89d, and vias.

[0038] In Example 3, the Rogowski coil 80 can detect the current flowing through the current detection wiring 90. In particular, since the spiral wiring 83 surrounds the current detection wiring 90 in a ring shape, the current flowing through the current detection wiring 90 can be detected more accurately. Also, in Example 3, since the Rogowski coil 80 is provided on the first layer 31, the second layer 32 can be made thinner, and the wiring board 11 can be made thinner. [Examples]

[0039] In the wiring board 11c of Embodiment 4 shown in Figure 11, the Rogowski coil 80 and the current detection wiring 90 are distributed across the current detection component 82 and the laminated wiring section 50, which is different from Embodiment 3, but otherwise it is the same as Embodiment 3.

[0040] In Example 4, similar to Example 3, the spiral wiring 83 extends in an annular shape along its central axis when viewed along the z-direction. Also, similar to Example 3, the axial wiring 84 in Example 4 extends linearly along the z-direction at the center of the annular spiral wiring 83.

[0041] In Embodiment 4, the spiral wiring 83 is composed of a current detection component 82 and a laminated wiring section 50. That is, the lower part of the spiral wiring 83 is composed of the internal wiring of the current detection component 82, and the upper part of the spiral wiring 83 is composed of the internal wiring of the laminated wiring section 50. Therefore, the spiral wiring 83 is distributed across the first layer 31 and the second layer 32. Also in Embodiment 4, the current detection wiring 90 is composed of a current detection component 82 and a laminated wiring section 50. That is, the lower part of the current detection wiring 90 is composed of the internal wiring of the current detection component 82, and the upper part of the current detection wiring 90 is composed of the internal wiring of the laminated wiring section 50. Therefore, the current detection wiring 90 extends across the first layer 31 and the second layer 32.

[0042] In Example 4, the Rogowski coil 80 can detect the current flowing through the current detection wiring 90. In particular, the effective radius of the spiral of the spiral wiring 83 can be increased, allowing for more accurate detection of the current flowing through the current detection wiring 90. Also, in Example 4, since a portion of the Rogowski coil 80 is provided on the first layer 31, the second layer 32 can be made thinner, and the wiring board 11c can be made thinner.

[0043] Furthermore, the wiring boards of Examples 2 to 4 can be manufactured using the same manufacturing method as the wiring board of Example 1.

[0044] In the above embodiments 1 to 4, the semiconductor switching elements 12 and 14 had MOSFETs, but other transistors (for example, IGBTs (insulated gate bipolar transistors)) may be used instead of MOSFETs.

[0045] The configurations of the wiring boards disclosed in this specification are listed below. (Composition 1) A wiring board, Semiconductor switching elements and Connection wiring and A current detection wire connected to the semiconductor switching element via the aforementioned connection wiring, A Rogowski coil for detecting the current flowing through the current detection wiring, It has a built-in, The aforementioned wiring board, A first layer located within the range of the semiconductor switching element in the thickness direction of the wiring board, A second layer located in the thickness direction within the range between the surface of the wiring substrate and the semiconductor switching element, It has, The aforementioned connecting wiring is arranged within the second layer, At least a portion of the Rogowski coil is located within the first layer. Wiring board. (Configuration 2) The wiring board according to configuration 1, wherein the current detection wiring extends along the planar direction of the wiring board. (Composition 3) The wiring board according to configuration 2, wherein the Rogowski coil is arranged within the first layer. (Composition 4) The first portion of the Rogowski coil is arranged within the first layer, The second portion of the Rogowski coil is arranged within the second layer, The current detection wiring is positioned between the first portion and the second portion. The wiring board described in Configuration 2. (Composition 5) The wiring board according to configuration 2 or 3, wherein the current detection wiring is arranged within the first layer. (Composition 6) The wiring board according to configuration 2 or 3, wherein the current detection wiring is arranged within the second layer. (Composition 7) The central helical axis of the Rogowski coil extends in a ring shape along the thickness direction when the wiring substrate is viewed in plan view, The current detection wiring extends along the thickness direction within the area enclosed by the ring shape. The wiring board described in Configuration 1. (Composition 8) The wiring board according to configuration 7, wherein the Rogowski coil and the current detection wiring are arranged within the first layer. (Composition 9) The wiring board according to configuration 7, wherein the Rogowski coil and the current detection wiring are arranged across the first layer and the second layer. (Composition 10) A method for manufacturing a wiring board that incorporates a semiconductor switching element, a connecting wire, a current detection wire connected to the semiconductor switching element via the connecting wire, and a Rogowski coil for detecting the current flowing through the current detection wire, The aforementioned manufacturing method A step of forming a current detection component having at least a portion of the Rogowski coil, A step of mounting the semiconductor switching element and the current detection component on a support layer, A step of forming a second layer including the connection wiring on top of the semiconductor switching element and the current detection component, It has, The current detection wiring is formed within the current detection component, within the second layer, or within a range spanning the current detection component and the second layer. The Rogowski coil is formed within the current detection component, or within the range that spans the current detection component and the second layer. Manufacturing method.

[0046] In configuration 2, the plane direction refers to any direction within a plane parallel to the wiring board.

[0047] According to configuration 3, since the Rogowski coil is not present in the second layer, the second layer can be made thinner.

[0048] According to configuration 4, the current flowing through the current detection wiring can be detected with high accuracy. Furthermore, since only the second portion of the Rogowski coil exists within the second layer, the second layer can be made thinner.

[0049] According to configuration 7, the current flowing through the current detection wiring can be detected with high accuracy.

[0050] Although embodiments have been described in detail above, these are merely illustrative and do not limit the scope of the claims. The technologies described in the claims include various modifications and changes to the specific examples illustrated above. The technical elements described in this specification or drawings exhibit technical usefulness individually or in various combinations, and are not limited to the combinations described in the claims at the time of filing. Furthermore, the technologies illustrated in this specification or drawings achieve multiple objectives simultaneously, and achieving even one of these objectives constitutes technical usefulness. [Explanation of Symbols]

[0051] 11: Wiring board, 12-14: Semiconductor switching element, 20: Support layer, 31: First layer, 32: Second layer, 50: Multilayer wiring section, 80: Rogowski coil, 83: Helical wiring, 84: Axis wiring, 85: Helical wiring, 86: Axis wiring, 90: Current detection wiring, 94: Connection wiring

Claims

1. A wiring board (11), A semiconductor switching element (14) and Connection wiring (94), A current detection wire (90) connected to the semiconductor switching element via the aforementioned connection wire, A Rogowski coil (80) for detecting the current flowing through the current detection wiring, It has a built-in, The aforementioned wiring board, A first layer (31) located within the range of the semiconductor switching element in the thickness direction of the wiring board, A second layer (32) located in the thickness direction within the range between the surface of the wiring substrate and the semiconductor switching element, It has, The aforementioned connecting wiring is arranged within the second layer, At least a portion of the Rogowski coil is located within the first layer. Wiring board.

2. The wiring board according to claim 1, wherein the current detection wiring extends along the planar direction of the wiring board.

3. The wiring board according to claim 2, wherein the Rogowski coil is arranged within the first layer.

4. The first portion (83, 84) of the Rogowski coil is arranged within the first layer, The second portion (85, 86) of the Rogowski coil is arranged within the second layer. The current detection wiring is positioned between the first portion and the second portion. The wiring board according to claim 2.

5. The wiring board according to claim 2 or 3, wherein the current detection wiring is arranged within the first layer.

6. The wiring board according to claim 2 or 3, wherein the current detection wiring is arranged within the second layer.

7. The central helical axis of the Rogowski coil extends in a ring shape along the thickness direction when the wiring substrate is viewed in plan view, The current detection wiring extends along the thickness direction within the area enclosed by the ring shape. The wiring board according to claim 1.

8. The wiring board according to claim 7, wherein the Rogowski coil and the current detection wiring are arranged within the first layer.

9. The wiring board according to claim 7, wherein the Rogowski coil and the current detection wiring are arranged across the first layer and the second layer.

10. A method for manufacturing a wiring board that incorporates a semiconductor switching element, a connecting wire, a current detection wire connected to the semiconductor switching element via the connecting wire, and a Rogowski coil for detecting the current flowing through the current detection wire, The aforementioned manufacturing method A step of forming a current detection component having at least a portion of the Rogowski coil, A step of mounting the semiconductor switching element and the current detection component on a support layer, A step of forming a second layer including the connection wiring on top of the semiconductor switching element and the current detection component, It has, The current detection wiring is formed within the current detection component, within the second layer, or within a range spanning the current detection component and the second layer. The Rogowski coil is formed within the current detection component, or within the range that spans the current detection component and the second layer. Manufacturing method.

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