Wafer cryo-debonding method
JP2026505004APending Publication Date: 2026-02-10WESTLAKE INSTRUMENTS (HANGZHOU) TECHNOLOGY CO LTD
Patent Information
- Application Number
- JP2025543148
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-11-02
- Filing Date
- 2024-07-17
- Publication Date
- 2026-02-10
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Figure 2026505004000001_ABST
Abstract
The object of the present invention is to provide a wafer cryo-separation method. The method includes the steps of applying a liquid aqueous medium to the end face of the single crystal ingot and / or the clamping surface of a temperature-controlled fixture, cooling and solidifying the aqueous medium by the action of the temperature-controlled fixture to complete the fixation of the single crystal ingot between a pair of temperature-controlled fixtures, and moving at least one temperature-controlled fixture until the modified layer of the single crystal ingot is separated, and after completion of the separation, heating and liquefying the solid aqueous medium by the action of the temperature-controlled fixture to obtain a wafer and the remaining single crystal ingot. The present invention has advantages such as high separation efficiency, elimination of a cleaning process, easy control of separation conditions, low risk of wafer cracking, simple operation, and suitability for large-scale industrial applications.
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Citation Information
Patent Citations
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