Semiconductor device with vertical body contact and method of manufacturing same

Abstract

A method, apparatus, and system are described for a memory device having a transistor body contact that extends vertically across stacked circuit layers and is connected to a body portion of a data access transistor. The memory device may include storage cells and corresponding access circuitry in each of the stacked layers. The vertically extending transistor body contact may provide a route for leakage current away from the data storage circuitry when the data access transistor is off.

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