Engineering Epi stack for ultra-thin wafers

Abstract

Embodiments of the present disclosure include thin-film device structures and methods for forming thin-film device structures. Embodiments of the present disclosure provided herein include the use of designed epitaxial (Epi) layers formed on a base substrate. The designed epitaxial layer comprises two or more epitaxial layers, each epitaxial layer comprising a material that allows for the selective removal of at least one of the two or more epitaxial layers from the other(s). In some embodiments, one of the two or more formed epitaxial layers has etching selectivity (e.g., wet and / or dry etching selectivity) to a material located on either side of the formed layer.

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