Ohm contacts for semiconductor structures

Abstract

A method for forming ohmic contacts in semiconductor structures utilizes physically vapor-deposited films. In some embodiments, the method may include forming at least one recess in a III-V semiconductor material on a substrate, forming a mask on the semiconductor material leaving at least the recess unmasked, depositing a contact transition layer of a metal nitride material in the recess using a physically vapor-deposited (PVD) process, and forming a metal layer on the contact transition layer to form ohmic contacts. Ohmic contacts can be formed for use in high electron-mobility transistors (HEMTs), light-emitting diodes (LEDs), and / or laser-based structures, etc. The contact transition layer may be doped or undoped, depending on the variant of metal nitride used as the contact transition layer material.

Images