Systems and methods for semiconductor etching

Abstract

A method is provided. The method includes etching a substrate through a series of steps to form a recess in the substrate. A first of the series of steps forms an inhibitor layer covering the initial portion of the recess based on a first etchant radical. A second of the series of steps exposes the initial portion of the recess based on ions. A third of the series of steps expands the initial portion of the recess based on a second etchant radical.

Claims

1. A method for etching a substrate to form a recess in the substrate, wherein the method is The steps include forming an inhibitor layer covering the initial portion of the recess based on a first radical, A step of exposing the initial portion of the recess based on ions, The steps include expanding the initial portion of the recess using a mixture containing the first radical and the second radical, Methods that include...

2. The second radical is sulfur hexafluoride (SF ６ ) comprises, and the first radical is silicon tetrafluoride (SiF ４ ) and oxygen (O ２ The method according to claim 1, including a combination with ).

3. The second radical is sulfur hexafluoride (SF ６ ) comprises, and the second radical is silicon tetrachloride (SiCl ４ ) and oxygen (O ２ The method according to claim 1, including a combination with ).

4. The second radical contains sulfur hexafluoride (SF ６ ), and the first radical contains octafluorocyclobutane (C ４ F ８ ), the method according to claim 1.

5. The method according to claim 1, wherein etching the substrate to form the recess comprises repeating the forming step, the exposing step, and the expanding step.

6. The method according to claim 1, wherein the first radical and the second radical each have isotropic properties, and the exposure step has anisotropic properties.

7. The method according to claim 1, wherein the step of exposure includes removing the first portion of the inhibitor layer that overlaps the bottom surface of the initial portion of the recess.

8. The method according to claim 7, wherein during the exposure step, the second portion of the inhibitor layer extends along the inner side wall of the initial portion of the recess without being substantially affected.

9. The method according to claim 1, wherein the recess extends through the substrate, and the method further comprises filling the recess with a conductive material.

10. The steps include forming a patterned layer on a first portion of the substrate and exposing a second portion of the substrate, The steps include forming an inhibitor layer along the inner surface of a recess using a first radical, To form the recess, the steps include etching the substrate along the second portion using a second radical, A step of using ions to penetrate the inhibitor layer along the second portion, The steps include expanding the recess using a mixture containing the first radical and the second radical, Methods that include...

11. The method according to claim 10, wherein the steps of etching the substrate and forming the inhibitor layer are performed simultaneously.

12. The second radical is sulfur hexafluoride (SF ６ ) comprises, and the first radical is silicon tetrafluoride (SiF ４ ) and oxygen (O ２ The method according to claim 11, including a combination with ).

13. The second radical is sulfur hexafluoride (SF ６ ) comprises, and the first radical is silicon tetrachloride (SiCl ４ ) and oxygen (O ２ The method according to claim 11, including a combination with ).

14. The second radical is sulfur hexafluoride (SF ６ ) comprises, and the first radical is octafluorocyclobutane (C ４ F ８ The method according to claim 11, including )

15. The aforementioned O ２ The SiF for ４ The method according to claim 12, wherein the ratio of the standard cubic centimeters per minute (SCCM) is greater than 2.

16. The method according to claim 11, further comprising repeating the steps of etching the substrate, forming the inhibitor layer, piercing the inhibitor layer, and expanding the recess two or more times in that order.

17. The steps include etching a semiconductor layer using a first isotropic reactant to form a recess therein, The steps include supplying the first isotropic reactant to form an inhibitory layer covering the inner surface of the recess, A step of removing a portion of the inhibitor layer using an anisotropic reagent, The steps include supplying a second isotropic reactant simultaneously with supplying the first isotropic reactant to expand the recess, Methods that include...

18. The second isotropic reactant is sulfur hexafluoride (SF6). ６ The first isotropic reactant is silicon tetrafluoride (SiF ４ ) and oxygen (O ２ The method according to claim 17, including a combination with ).

19. The second isotropic reactant is sulfur hexafluoride (SF6). ６ The first isotropic reactant is silicon tetrachloride (SiCl ４ ) and oxygen (O ２ The method according to claim 17, including a combination with ).

20. The second isotropic reactant is sulfur hexafluoride (SF6). ６ The first isotropic reactant is octafluorocyclobutane (C ４ F ８ The method according to claim 17, including )

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