Hybrid battery system with continuous power supply

Abstract

A semiconductor-based battery system comprising a primary battery that spontaneously provides power, which in embodiments trickle-charges a secondary battery. The battery obtains power as heat from the surrounding environment. The primary battery is powered through internal blackbody radiation, which cools the microplatform and provides thermoelectric power at all temperatures above absolute zero, with the available power increasing with temperature. The lifespan of the primary battery is not limited by electrochemical aging. In some embodiments, the primary battery powers the target device directly without the use of a secondary battery.

Description

[Technical Field]

[0001] This invention generally relates to semiconductor-based continuous-power primary batteries (CPBs). [Background technology]

[0002] The present invention features a 3D microfabricated MEMS structure based on deep submicron foundry processing technology. The microfabricated MEMS structure includes nanowires with a phononic MEMS structure having extremely low thermal conductivity. In the present invention, a microplatform suspended by thermally insulated nanowires is placed within a pixel, and the main thermal energy transport affecting the platform temperature is Planck-type blackbody photon emission. In the present invention, the suspended microplatform is structured to maximize the spontaneous blackbody radiance from the platform surface. The heat radiated from the platform is terminated outside the platform, and the platform is passively cooled.

[0003] A Seebeck thermocouple within each pixel senses the resulting temperature difference between the platform and the surrounding warmer heatsink, and provides power. The platform and nanowires are equipped with thermocouples, with at least one junction located inside the platform and another junction located outside, maintained at the heatsink temperature. In this invention, the thermocouple voltage from multiple interconnected pixels is increased to a level that can supply power to a target device such as a hearing aid.

[0004] Stefan and Boltzmann (c. 1879–1804) derived a detailed equation known as Boltzmann's Law. This equation states that, using absolute zero (-273°C) as a reference point, the thermal radiance from any surface is equal to the temperature raised to the fourth power (T). 4 This shows that it increases in proportion to ). More recently, in 1899, M. Planck explained the Boltzmann equation by referring to quantum theory, laying the foundation for modern quantum physics.

[0005] The specific physical techniques supporting this invention are based on micromechanics and microengineering techniques, commonly known as MEMS. MEMS have important applications across a wide range of micro / nanodevice technologies, including the 3D nano / microdevices of this invention. The first modern MEMS device was disclosed by H. Nathanson and R. Wickstrom in U.S. Patent No. 3,413,573, issued in 1968, as a resonant cantilever device with an operating microcantilever that modulates the transconductance of a MOSFET transistor.

[0006] Another actuated MEMS device featuring an SPST switch is actuated out of plane by a semiconductor thermal microheater operated by an external heat source. This is disclosed by W. Carr and XQ Sun in U.S. Patent No. 5,796,152, issued in 1998.

[0007] A MEMS device comprising a bimorph cantilever with operation including an external blackbody infrared light source is disclosed to M. Rinaldi et al. in U.S. Patent No. 10,643,810, issued in 2020. The operation is based on heat absorbed by the bimorph cantilever, the heat source being an external blackbody infrared emitter.

[0008] In 2022, prior art disclosed a MEMS microplatform residing within a Seebeck thermocouple and cooled by spontaneous blackbody radiation from the MEMS platform, based on a constant-temperature phononic structure that provides extreme thermal insulation for the microplatform. This disclosure is published in three U.S. patents issued in 2022, 11,231,382, 11,300,453, and 11,381,761, with W. Carr as the inventor. All three patents disclose a thermopile infrared detector in which the Seebeck thermocouple voltage generated as the platform is spontaneously cooled by its own blackbody radiation. These patents disclose an infrared detector and claim that the detector structure with a spontaneously cooled platform functions as a primary battery.

[0009] Extreme thermal isolation of the platform with the phononic MEMS structure is a fundamental element of the present invention. The first patent disclosing a phononic MEMS device with a phononic MEMS structure was U.S. Patent No. 9,006,857, issued on April 14, 2015, and published to W. Carr.

[0010] The possibility of a microplatform cooling itself through spontaneous blackbody radiation is related to the radiated power P emitted from a platform having a radiating surface. BB This is limited by [the following]. Figure 1 is a graph showing the blackbody radiance from a surface with emissivity ε=1 as a function of temperature near room temperature, based on Boltzmann's law for blackbody radiance. Figure 1 shows the maximum broadband infrared power available for conversion from blackbody radiance to power in a primary cell equipped with a Seebeck thermocouple connected to a spontaneously cooling platform.

[0011] The prior art described above does not disclose a semiconductor-based primary battery integrated with a secondary battery; rather, a primary battery with a phononic MEMS structure provides a trickle charging current to the secondary battery. The power of the primary battery originates from its internal spontaneous blackbody radiance. Systems incorporating a semiconductor-based primary battery within the target system can significantly improve state-of-the-art miniature battery source technology, in addition to providing a virtually unlimited primary battery life. [Overview of the Initiative]

[0012] The present invention includes a hybrid battery system (HBS) in which an array of semiconductor pixels is configured to provide a primary battery integrated with a secondary battery. The primary battery consists of an array of planar platforms suspended by phononic nanowires within a hermetically sealed cavity. Each platform is cooled by spontaneous blackbody radiation, referred to as "first radiation," emitted from one or more of its surfaces. The platforms are configured to increase the first radiation.

[0013] The surface of the cavity walls surrounding the platform is exposed to a first radiation that cools the platform. The cavity walls are configured to reduce the blackbody's "second radiation" that radiates heat to the platform. The cavity walls are configured to maximize the absorption of the first radiation and minimize the second radiation.

[0014] Phononic nanowires feature a phononic MEMS structure containing a phononic crystal (PnC) metamaterial and / or randomly arranged phonon scattering structures to reduce the thermal conductivity of the nanowire. The phononic MEMS structure comprises a crystalline or polycrystalline semiconductor, and the structural elements are physically separated by a distance shorter than the mean free path (mfp) of at least some thermally conducting phonons. The phononic MEMS structure is configured to increase the ratio of electrical conductivity to thermal conductivity within the phononic nanowire.

[0015] Each platform in the array, along with its connecting nanowires, is equipped with a Seebeck thermocouple in its electrical circuit. In one embodiment, the thermal power supply provides a trickle charging current to the secondary battery. In another embodiment, a voltage regulator maintains a constant voltage of charge flowing into the secondary battery, thereby supplying power to the target device.

[0016] Phononic crystals (PnC) have a structure in which PnC structural elements are arranged in an orderly manner, providing a phononic bandgap, which is a type of resonant structure. In other embodiments, the structural elements are randomly arranged on the surface, bulk, or edges of nanowires.

[0017] The phononic MEMS structure comprises a semiconductor selected from the group including, but is not limited to, silicon, silicon germanium, vanadium oxide, silicon carbide, gallium nitride, and organic semiconductors.

[0018] Phononic MEMS structures, though not limited to them, include pores, vias, pillars, surface dots, nanowire clusters, plugs, cavities, depressions, surface microparticles, roughened edges, injected molecular species, porous structures, and molecular aggregates, arranged in a periodic or random manner.

[0019] In embodiments, the nanowire may be adapted to include a thin metal film that provides improved electrical conductivity and / or static positioning of the nanowire.

[0020] In the embodiment, the nanowire may be adapted to include a dielectric material layer that provides electrical insulation between nanowire layers and / or static positioning of the nanowire.

[0021] The planar surface of the platform may include, but is not limited to, carbon nanotubes (CNTs), graphene, silicon black, carbon black, or gold black, and may result in high emissivity to primary radiation over a wide wavelength range.

[0022] The cavity wall is configured to reduce wall reflection and enhance absorption of the first radiation incident from the platform.

[0023] In an embodiment, the cavity wall comprises a resonant structure that provides absorption of the first radiation while reducing the second radiation over a wide infrared wavelength range.

[0024] The cavity is kept in a vacuum state or backfilled with a gas having low thermal conductivity such as Ar, Xe, Kr, etc. to enhance thermal insulation of the platform. In an embodiment, the cavity includes a getter material for maintaining a low-pressure environment within the cavity.

[0025] Pixels within the array of primary batteries are interconnected in a parallel / series combination circuit to provide a voltage suitable for trickle charging the secondary battery.

[0026] In an embodiment, the primary battery is formed of a multilayer sandwich of semiconductor wafers joined together to define a plurality of cavities within each lateral plane. Each wafer is configured with a structure for controlling the component of spontaneous blackbody radiation within each cavity.

[0027] In an embodiment, a voltage regulator is connected between the primary battery and the secondary battery to limit the full charge voltage of the secondary battery.

[0028] The secondary battery includes, but is not limited to, one or more of lithium-ion type, lithium polymer type, lead-acid type, NiCd type, nickel-metal hydride type, etc.

[0029] In some applications, for low-duty cycle target devices that only require high power instantaneously, a capacitor with a large capacitance may replace the secondary battery.

[0030] The platform has a planar structure and features edge dimensions ranging from 250 nanometers to several millimeters. The phononic nanowires feature thicknesses ranging from 10 nanometers to approximately 1 millimeter.

[0031] Primary batteries operate in ambient temperature environments with temperatures as high as 1500°C, and the batteries are composed of high-temperature semiconductors such as SiC or GaN.

[0032] Primary batteries are manufactured in semiconductor foundries using standard wafer processing tools. The most readily available tools for silicon wafers are available for processing primary batteries. [Brief explanation of the drawing]

[0033] [Figure 1] This graph shows the blackbody power radiated from a surface with emissivity ε=1.0 within a limited wavelength range, expressed as a function of ambient temperature. [Figure 2A] This is a plan view of a phononic nanowire having a phononic crystal (PnC) structure. [Figure 2B] This is a plan view of a phononic nanowire composed of random phonon scattering elements. [Figure 3A] This is a cross-sectional view of a nanowire having a (PnC) structure. [Figure 3B] This is a cross-sectional view of a nanowire with a thin metal or conductive layer covering the phononic layer. [Figure 3C] This is a cross-sectional view of a nanowire composed of a dielectric layer and a conductive layer covering a phononic layer. [Figure 4A] This is a plan view of a platform supported by two nanowires. [Figure 4B] This is a plan view of a platform supported by four nanowires. [Figure 5] This is a plan view of the platform and the adjacent cavity wall, showing the blackbody radiance from both sides. [Figure 6]This is a cross-sectional view of a primary battery pixel with a decorated surface-side semiconductor encapsulation that creates an airtight cavity. [Figure 7] This is a cross-sectional view of a primary battery pixel in which the surface and bottom semiconductors are decorated, creating an airtight cavity where both cavity walls actively absorb radiance from the platform. [Figure 8A] This illustrates how resonant structures positioned within both cavity walls provide broadband absorption with low emissivity relative to the radiance from the platform. [Figure 8B] This illustrates how resonant structures positioned within both cavity walls provide broadband absorption with low emissivity relative to the radiance from the platform. [Figure 9] This is a schematic circuit diagram illustrating the parallel / series connection of platforms within a primary battery array. [Figure 10] This is a schematic diagram depicting the HBS connected to the target device. [Figure 11] This is a schematic diagram illustrating an HBS adapted without the use of a secondary battery. [Modes for carrying out the invention]

[0034] Definitions: The following terms are expressly defined for use in this disclosure and the attached claims. A "primary battery" is a voltaic cell designed to provide a trickle charging current to an electrical load for a virtually unlimited period of time. A "secondary battery" is a voltaic cell that can be electrically recharged after use to its original pre-discharge state by passing an electric current in the opposite direction to the discharge current through the cell. "Radiance" and "radiation" refer to the broadband photon blackbody luminous flux density emitted from, incident on, or absorbed by a surface. • A "thermoelectric device" refers to a semiconductor Seebeck junction device that converts thermal energy into electrical energy. "Blackbody radiation" refers to spontaneous thermal-electromagnetic radiation that occurs inside or around an object that is in thermodynamic equilibrium with its environment. "LED" refers to a light-emitting diode that has a semiconductor pn junction. "LEP" stands for Light Emitting Platform, which is equipped with a heated blackbody radiator. A "surface plasmonic polariton" (SPP) refers to a surface electromagnetic wave induction field along the surface of a metamaterial pattern that has sufficient electrical conductivity to support the motion of associated electrons. "Phononic nanowire" refers to a suspended nanowire that contains a phononic resonant element or a non-resonant element that reduces thermal conductivity. A "phononic crystal" (PnC) refers to a specific metamaterial composed of periodic nanostructures that reduce the thermal energy transport of phonons. "MEMS" refers to a micro-electromechanical system with 3D structural components, and is generally fabricated from semiconductor wafers using integrated circuit fabrication tools. • "RFID receiver" or "RFID tag" refers to a remotely controlled device, and control of the target device is obtained via control signals transmitted from a remote inquiry device.

[0035] Nanowires feature phononic MEMS structures that reduce thermal conductivity. This reduction in thermal conductivity is achieved by designing the Brillouin zone to form phononic crystals (PnC) or randomly arranged scattering structural elements. The effectiveness of physical decoration in nanowires for reducing thermal conductivity is based on the principle of duality in quantum mechanics, which stipulates that phonons can exhibit both wave and particle properties at the nanoscale. The basic phononic MEMS structure comprises a crystalline or polycrystalline semiconductor, and the structural elements are physically separated by a distance shorter than the mean free path (mfp) of at least some thermally conducting phonons.

[0036] Figure 2A is a plan view of a phononic nanowire 201 containing PnC with a “porous” structure 203. The PnC features a phononic bandgap and acts as a barrier to thermally conductive phonons traveling along the nanowire length. An example of a PnC structure that reduces the thermal conductivity of semiconductor thin films is found in S. Mohammadi et al, Appl. Phys. Lett., vol. 92, 221905 (2008). PnC structuring in the Brillouin zone restricts phonon transport and enhances the thermal insulation of the platform.

[0037] Phononic MEMS structures are composed of crystalline or polycrystalline semiconductors, and their structural elements are physically separated by a distance shorter than the mean free path (mfp) of at least some thermal conduction phonons. Phononic MEMS structures are primarily composed of semiconductors selected from the group consisting of, but not limited to, silicon, silicon germanium, vanadium oxide, silicon carbide, gallium nitride, and organic semiconductors.

[0038] Figure 2B is a plan view of the phononic nanowire 202, which is composed of random phonon scattering elements 204 and 205.

[0039] The phononic MEMS structures in Figures 2A and 2B include, but are not limited to, pores, vias, pillars, surface dots, plugs, cavities, depressions, surface microparticles, roughened edges, injected molecular species, porous structures, and molecular aggregates. The phononic structure within the semiconductor nanowire increases the ratio of electrical conductivity to thermal conductivity.

[0040] Figure 3A is a cross-sectional view of a nanowire having a PnC "porous" structure 203. Figure 3B depicts a cross-section of a nanowire with a thin metal layer or other electrically conductive layer 307 covering the phononic layer 201. This film enhances the electrical conductivity of the nanowire. Figure 3C depicts a cross-section of a nanowire consisting of a dielectric layer 308 and a conductive layer 307 covering a thicker phononic layer 201. The dielectric layer provides electrical insulation between the metal layer and the phononic MEMS layer of the nanowire, and / or static stress control that affects the vertical static positioning of the platform.

[0041] Figures 4A and 4B depict plan views of a pixel comprising a platform 402 suspended above the cavity 403 by nanowires 405 from a surrounding support structure 401. The platform comprises one or two thermocouples, each thermocouple comprising a junction located on the platform and two nanowires anchored to the surrounding structure 401. Figures 4A and 4B show the case with one and two junctions, respectively. Each nanowire, as part of each thermocouple, is a highly doped p+ semiconductor or n - It is equipped with a semiconductor and also provides physical support for the open platform 402. One end of each nanowire 407 is anchored to a coupling pad 404 that provides an electrical connection to a Seebeck junction.

[0042] The platforms and nanowires within each pixel in Figures 4A and 4B are released from the underlying platform using chemical etching during the fabrication process, thereby providing thermal insulation for each platform.

[0043] Figure 5 depicts a plan view of an isothermal platform comprising a substrate 501 and a surface structure 507 structured to provide maximum first blackbody radiance over a broadband. The platform is supported by nanowires 502 in a cavity suspended from the surrounding pixel wafer structure. A surface-bonded wafer 503 comprises a second surface structure 505 consisting of a patterned metal layer 506 and a dielectric layer 505 disposed on the surface-side wafer structure 504. The surface-side wafer 503 is configured to minimize second radiance or reflection directed toward the platform.

[0044] The platform is cooled by a first radiance and heated by a second radiance or reflection from the surface-side wafer. Bidirectional thermal energy transport, including the first and second heat fluxes, is described within beam 508. The design goal is to maximize the first radiance and minimize any heat transport from the surface-side surface 505. In the ideal design, thermophoton energy transport 508 is unidirectional from the platform, which consists of a surface 507 with an infrared emissivity of 1.0, thereby resulting in maximum cooling of the isothermal platform.

[0045] In Figure 5, the platform structure comprises one or more junctions (not shown) that sense the temperature difference between the platform and a supporting substrate, which is a heatsink (typically at room temperature). A Seebeck voltage is generated within each pixel in proportion to the temperature difference between the platform junction(s) and the surrounding substrate heatsink. In a typical application, multiple platforms are connected in series / parallel array configurations to provide the desired voltage for delivering power to an external electrical load of the pixel array. The pixel array depicted in Figure 5 comprises a form of primary cell in which only one surface of the pixel platform provides significant radiance.

[0046] The surface structure 505 of the surface wafer 503 is configured to absorb broadband infrared radiation and reduce the reflection of thermal energy returning to the platform. Such a surface design is disclosed in Z. Wang et al, MDPI Photonics, vol. 9, 9080574 (2022).

[0047] Figure 6 depicts the entire pixel comprising the platform 607 and the wafer portion bonded to the surface side of Figure 5. Figure 6 depicts a cross-sectional view of a primary battery pixel with a bonded surface semiconductor 608 comprising a substrate 609, a dielectric film 610, and a patterned metal layer 615. Structure 605 comprises the platform 607 and nanowires 606 suspended from the surrounding wafer 601. Surface wafer 608 comprises a semiconductor 611 and a structure within a resonant photon absorber 612. The platform 607 and its supporting nanowires, having a surface configured to enhance blackbody radiance, are sealed within an hermetically sealed cavity 620. A spacer layer 615 is bonded to increase the separation between the surface cavity wall structure 612 and the platform 607.

[0048] The spacer layer 615 can be generated as a patterned metal or dielectric layer on the starting wafer 601. The platform 607, with its nanowires 606, is released from the semiconductor wafer 601, which consists of a substrate 604, a dielectric layer 603, and an active semiconductor layer 602, by vapor HF etching. The platform 605 and nanowires 606 are located within the active layer 603 of the wafer 601. The cavity 620 is generated by wafer bonding wafer 608 to wafer 601 in a vacuum environment, resulting in a permanent hermetically sealed cavity. The metal interconnect wires 617 are depicted as being bonded to wafer 601.

[0049] Platform 607 is cooled by pure radiation of spontaneous cooling blackbody radiance from platform 607 and heated by conduction sources within the pixels, including potential spontaneous radiation sources 612. Other heat sources to platform 607 include heat conducted through nanowires from the surrounding heatsinks 601 and 608, and I from nanowire 606 due to the current I supplied to the load. 2 This includes R heating and conduction / convection heat within the cavity 620. In embodiments where the thermal heating of platform 607 is sufficiently reduced, the platform spontaneously cools to below the temperatures of the isothermal heat sinks 601 and 608.

[0050] The depicted pixel wire 617 connects to other pixels in the array, providing a series / parallel combinational circuit. The Seebeck thermoelectric voltage resulting at each pixel due to platform cooling provides power for trickle charging of the secondary battery and for directly powering the load device.

[0051] The embodiment of the primary battery pixel in Figure 7 comprises both a wafer 601 with its platform and nanowires 605 and a bonded surface-side wafer 608, as depicted in Figure 6, but with one difference: the platform and nanowires of the pixel 601 are released using back-side chemical etching instead of front-side chemical etching to increase the volume of the cavity 720. By increasing the cavity size, it becomes possible to grow carbon nanotubes or other structures with increased infrared emissivity on the back side of the platform 605, as depicted in Figure 7.

[0052] The extended structure in Figure 7 comprises a third wafer 701 bonded to the wafer combination in Figure 6, with a structure 704 similar to the structure 612 in Figure 6 configured to absorb radiation and reduce heat reflection from the platform. Heat transport from both surfaces is depicted as infrared beams 614 and 705. The third wafer 701 comprises a dielectric layer 702 above the rigid structure 703 and a patterned plasmonic film 704 exposed to radiation from the platform 605.

[0053] If the bottom surface of the platform is configured to have the same emissivity as the front surface, the overall radiance of the platform approximately doubles. This doubling of the platform's radiance results in approximately double the pixel voltage. The pixels in Figure 7 are interconnected with the same array circuit as the pixels in Figure 6, further providing a primary battery with double the terminal voltage.

[0054] Figures 8A and 8B depict resonant absorption structures located within one or both cavity walls that provide (1) broadband absorption of blackbody radiance from the thermoelectric platform and (2) low emissivity or low reflectivity of blackbody radiance to the platform. Generally composed of metal films, these absorption structures are examples of structures 505, 612, and 704 in the pixels of Figures 5, 6, and 7, respectively. These resonant structures result in absorption, low emissivity, and low reflectivity over a wide wavelength range, including the wavelength range of interest from 5 to 16 micrometers.

[0055] Figure 8A depicts the cavity surface that yields two primary overlapping absorption resonances determined by plasmonic resonant structures 801, 802 arranged in an array configuration. These structures may have a metal film or a dielectric film above the underlying dielectric film.

[0056] Figure 8B depicts the cavity surfaces that result in absorption within two resonant structures 803, 804 arranged in an array format. Resonant structure 804 has an absorption wavelength associated with the metal cross and another resonant wavelength associated with the metal rods around the cross that results in net broadband absorption. Resonant structure 803 depicts a notch in the cavity wall that results in additional absorption. In other embodiments, resonant absorption occurs within the cavity wall and is obtained with three-dimensional structures disposed on and within the cavity wall.

[0057] Figures 8A and 8B are representative examples of a variety of resonant structures that result in nearly absolute absorption over a focused broadband wavelength band centered around a wavelength of approximately 10 micrometers when disposed in proximity in an array format.

[0058] Figure 9 is a schematic circuit diagram depicting the parallel / series connection of a plurality of pixels in an array format within a primary battery. The pixels can be interconnected in many circuit combinations. The example of Figure 9 includes three groups of serially connected pixels, each group providing a voltage level useful for trickle charging a secondary battery or for directly supplying power to a load device. The number of serially connected pixels 901 determines the terminal voltage of the battery VPB and the number of pixels connected in parallel determines the short-circuit current available to the load. The nominal primary battery voltage VPB can be set using the series pixel circuit, and the maximum available load current is determined by the number of parallel circuits.

[0059] Figure 10 is a schematic diagram depicting a battery system in which a primary battery 1001 is further connected to charge secondary batteries 1002, 1003 that are further connected to a target device 1004. A voltage regulator 1002 as depicted limits the maximum charging voltage to secondary batteries 1002, 1003 using an avalanche diode V A . The diode V Dは of voltage regulator 1002, the primary battery 1001 to the secondary battery V SBThis prevents power from being drawn from 1003. Other, more complex voltage regulation circuits may provide other desirable control functions. The device 1004 in Figure 10 is a secondary battery V SB Power is supplied directly from 1003.

[0060] Figure 11 is a schematic diagram illustrating a battery system without a secondary battery. The primary battery 1001 supplies power directly to the target device 1004 through the voltage regulator 1002. In these embodiments, the primary battery 1001 provides sufficient current to directly power the target device, and a secondary battery is not required. The application of Figure 11 may be particularly desirable as a power source for implantable biomedical devices and wearable low-power target devices.

[0061] Target devices for system biomedical applications In some embodiments, the hybrid battery system (HBS) is integrated with a biomedical device. Non-limiting examples of such biomedical devices include hearing aids, implantable cardiac pacemakers, and wearable or implantable sensors for analyzing blood components (e.g., insulin). In such embodiments, the primary battery within the HBS may be integrated with a sensor / control circuit in a sealed, implantable housing.

[0062] Personal target devices In some embodiments, the hybrid battery system (HBS) is integrated with personal target devices such as, but not limited to, infrared flashlights, personal alarms, virtual reality glasses (VREs), and mobile phones.

[0063] Remotely controlled devices In some embodiments, the hybrid battery system (HBS) is integrated with a remote control device such as an LED, LEP, or laser light source. In embodiments, the HBS is integrated with other remote control devices such as an alarm system, electronic door lock, or toxic gas monitor. In embodiments, the HBS is integrated with a remote control device such as a microwave RFID radio receiver or RFID tag, but is not limited to, and remote control is implemented through an electromagnetic inquiry device.

Claims

1. A hybrid battery system (HBS) comprising a Seebeck thermoelectric primary battery, wherein the primary battery consists of an array of planar platforms, each platform is located in an airtight cavity, each platform is suspended by phononic nanowires forming pixels within the airtight cavity, each platform is cooled by a first spontaneous blackbody radiation emitted from its surface, and further, a) At least one surface of each platform is configured to increase the first radiation, b) At least one surface of each airtight cavity wall exposed to the first radiation is configured to increase the absorption rate of the first radiation, c) The surface of the airtight cavity wall exposed to the platform is configured to minimize the second blackbody radiation emitted from each airtight cavity wall, d) The phononic nanowire comprises a micro-electromechanical phononic MEMS structure including a phononic crystal (PnC) metamaterial and / or randomly arranged phonon scattering structures, thereby reducing the thermal conductivity of the nanowire. e) The phononic microelectromechanical system (MEMS) structure comprises a crystalline or polycrystalline semiconductor, and the structural elements of the phononic MEMS structure are physically separated by a distance shorter than the mean free path (mfp) of at least some thermal conduction phonons. f) The phononic MEMS structure increases the ratio of electrical conductivity to thermal conductivity within the phononic nanowire, g) A hybrid battery system (HBS) in which an array of pixels comprises a Seebeck thermoelectric primary battery that provides power to a target electrical device, wherein the primary battery is formed from one or more semiconductor chips or wafers to define a plurality of hermetically sealed cavities, and each chip or wafer is composed of a structure for controlling the component of spontaneous blackbody radiation within each hermetically sealed cavity.

2. The HBS according to claim 1, wherein the phononic crystal (PnC) is structured to provide a phononic band gap, and the PnC structural units are arranged in an orderly manner.

3. The HBS according to claim 1 or 2, wherein the phononic scattering structure is randomly arranged on the surface, bulk, or edge of the nanowire.

4. The HBS according to any one of claims 1 to 3, wherein the phononic MEMS structure comprises, but is not limited to, a semiconductor material selected from the group including silicon, silicon germanium, vanadium oxide, silicon carbide, gallium nitride, and organic semiconductors.

5. The HBS according to any one of claims 1 to 4, wherein the phononic MEMS structure comprises, but is not limited to, pores, vias, pillars, surface dots, nanowire groups, plugs, cavities, depressions, surface microparticles, roughened edges, injected molecular species, porous structures, and molecular aggregates, arranged in a periodic or random manner.

6. The HBS according to any one of claims 1 to 5, wherein a portion of the phononic nanowire is adapted to include a thin metal film that provides improved electrical conductivity and / or static positioning of the nanowire.

7. The HBS according to any one of claims 1 to 6, wherein a portion of the phononic nanowires is adapted to include a dielectric material layer that provides electrical insulation between nanowire layers and / or static positioning of the nanowires.

8. The HBS according to any one of claims 1 to 7, wherein one or more planar surfaces of the platform include, but are not limited to, carbon nanotubes (CNTs), graphene, silicon black, carbon black, and gold black, resulting in increased emissivity for a first radiation over a broad wavelength range.

9. The HBS according to any one of claims 1 to 8, wherein the internal airtight cavity wall is configured to reduce the reflection and increase the absorption of the first radiation from the platform.

10. The HBS according to any one of claims 1 to 9, wherein the airtight cavity wall comprises a resonant structure that enhances the absorption of the first radiation and the reduction of the second radiation over a broad infrared wavelength range.

11. The HBS according to any one of claims 1 to 10, wherein the airtight cavity is maintained in a vacuum or backfilled with a gas with low thermal conductivity such as Ar, Xe, or Kr to enhance the thermal insulation of the platform.

12. The HBS according to any one of claims 1 to 11, wherein the airtight cavity includes a getter material for maintaining a low-pressure environment within the airtight cavity.

13. The HBS according to any one of claims 1 to 12, wherein the Seebeck thermoelectric primary battery comprises thermocouples connected as a parallel / series combination circuit that provides a voltage level suitable for trickle charging of a secondary battery.

14. The HBS according to any one of claims 1 to 13, wherein a voltage regulator is electrically connected between the primary battery and the secondary battery.

15. The HBS according to any one of claims 1 to 14, wherein the target electrical device comprises a biomedical device.

16. The HBS according to any one of claims 1 to 14, wherein the target electrical device comprises a device selected from the group consisting of an alarm system, a flashlight, a digital clock, an electronic door lock, a toxic gas monitor, and virtual reality glasses (VRE).

17. The HBS according to any one of claims 1 to 16, wherein the primary battery operates in an ambient temperature environment with a maximum temperature of 1500°C, and the primary battery comprises a high-temperature semiconductor.

18. The HBS according to any one of claims 1 to 17, wherein each platform is formed with lateral edge dimensions ranging from 250 nanometers to several millimeters.

19. The HBS according to any one of claims 1 to 18, wherein the phononic nanowire is formed with a thickness in the range of 10 nanometers to 1 micrometer.

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