Self-aligning back-surface contact lenses
Self-aligned back-side contacts for nanosheet transistors are achieved through selective etching and epitaxial growth, addressing process variations and enhancing source/drain growth, thus improving transistor array performance and integration.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- INTERNATIONAL BUSINESS MACHINE CORPORATION
- Filing Date
- 2024-06-17
- Publication Date
- 2026-07-07
AI Technical Summary
Conventional placeholder fabrication techniques for nanosheet transistor structures introduce undesirable process variations when forming transistor arrays with different gate pitches, leading to insufficient source/drain growth near the lower channel.
The development of self-aligned back-side contacts for nanosheet transistor structures using placeholder fabrication techniques that avoid undesirable process variations, achieved through selective etching and epitaxial growth of sacrificial nanosheets with varying germanium concentrations, followed by the formation of self-aligned placeholders with controlled gate pitches.
Enables the formation of self-aligned back-side device contacts without process variations, enhancing source/drain growth and reducing contact resistance, thereby improving the performance and integration of nanosheet transistor arrays.
Smart Images
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