Vapor deposition equipment and vapor deposition systems

Abstract

A deposition setup for manufacturing each of multiple subpixels having a side-by-side structure on a substrate may include an evaporation source located beneath the substrate and extruding deposition material toward the substrate. The evaporation source may include a point source or a linear source. A point source may be located at least four times further away from the substrate than a linear source.

Description

Technical Field

[0001] The embodiments relate to a vapor deposition apparatus and a vapor deposition system.

Background Art

[0002] As the demand for using portable information media increases, the application of organic light-emitting display devices has been expanding to various lightweight and thin information electronic devices. Recently, organic light-emitting display devices tend to be applied to product groups such as mobile PCs and automobiles rather than TVs and mobile phones. Since organic light-emitting display devices applied to mobile PCs and automobiles are driven by still images for a long time, a long lifespan is required. To achieve a long lifespan, it is necessary to maximize the extraction of light from the organic light-emitting element. To produce a long-lifespan organic light-emitting element, sub-pixels having a side-by-side structure with a top emission structure must be implemented with a structure of two or more stacked organic light-emitting elements each. Also, for cost reduction, it is important to expand to a technology that can be produced at 8.5 generations (2200×2500 mm) or more.

[0003] The main technologies emerging to implement the above-described structure are as follows.

[0004] First, there is a solution to apply a fine metal mask (hereinafter referred to as FMM) on a large screen. Second, there is a solution to pattern organic light-emitting elements using photolithography in units of sub-pixels. Such a solution can be referred to as PhSbS (Side by side structure by photolithography). Third, there is a solution to vapor-deposit a three-dimensional sub-pixel structure at different vapor-deposition angles according to a plurality of angles for each sub-pixel or each material.

[0005] Beyond these three approaches, technologies for freely adjusting and controlling the deposition angle, along with the deposition equipment and systems that embody this technology, could form the foundation for producing innovative organic light-emitting devices in the future. The core of such technologies lies in precisely depositing the deposition material at the design-required locations within the deposition equipment.

[0006] First, when manufacturing organic light-emitting devices using FMMs, there is a problem of reduced PPA (positional accuracy) at the subpixel level between the FMM and the substrate. Furthermore, even if subpixel alignment is good when manufacturing organic light-emitting devices using FMMs, differences in positional accuracy occur due to the shadowing effect of the FMM. Additionally, precise deposition positions are essential for each deposition material due to the PhSbS structure. Moreover, to realize new structures that constitute organic light-emitting elements on three-dimensional structures, a technology is needed to accurately realize the deposition angle of the deposition material.

[0007] The invention of such new deposition technologies can ultimately improve the product's luminous area ratio (EAR) and thus extend its lifespan. Furthermore, it enables the production of large-area substrates, increasing productivity and enhancing the utilization efficiency of organic light-emitting elements. Here, the luminous area ratio is the value obtained by dividing the luminous area of ​​a subpixel by the area of ​​the subpixel. [Overview of the Initiative] [Problems that the invention aims to solve]

[0008] The embodiments aim to solve the aforementioned problems and other problems.

[0009] Another objective of the embodiment is to provide deposition equipment and a deposition system that can improve productivity by patterning the organic light-emitting layer into a side-by-side structure and depositing it at different deposition angles to match the three-dimensional structure, whether or not FMM is used in the deposition process.

[0010] Another objective of the embodiment is to provide deposition equipment and a deposition system that allows for flexible changes to the deposition angle.

[0011] The technical problems of the embodiments are not limited to those described in this section, but also include those that can be understood from the description of the invention. [Means for solving the problem]

[0012] To achieve the aforementioned or other objective, according to one aspect of the embodiment, a deposition apparatus for manufacturing each of a plurality of subpixels having a side-by-side structure on a substrate includes an evaporation source device located beneath the substrate and ejecting a deposition material toward the substrate, wherein the evaporation source device includes a point source or a linear source, the point source being located at a distance of at least four times from the substrate than the linear source.

[0013] The range of the deposition angle of the point source in the scanning direction and the range of the deposition angle of the point source in the direction perpendicular to the scanning direction may be the same.

[0014] The plurality of subpixels include blue subpixels, green subpixels, and red subpixels, and each of the blue subpixels, green subpixels, and red subpixels may include a plurality of organic light-emitting layers.

[0015] When forming at least one of the plurality of organic light-emitting layers on the substrate using a mask located between the substrate and the point source, the deposition angle range of the point source is 60° to 120°, and the at least one organic light-emitting layer may be individually formed for the blue subpixel, the green subpixel, and the red subpixel by the mask.

[0016] The plurality of subpixels include blue subpixels, green subpixels, and red subpixels, and each of the blue subpixels, green subpixels, and red subpixels includes a hole injection layer on the anode electrode and at least one stack structure on the hole injection layer, and when the hole injection layer is formed on the substrate using the protrusions between the plurality of subpixels as a mask, the deposition angle range of the point source can be 60° to 120°.

[0017] The at least one stack structure includes a first stack structure and a second stack structure, and each of the blue subpixel, the green subpixel, and the red subpixel further includes a charge generation layer between the first stack structure and the second stack structure, and when the charge generation layer is formed on the substrate using the protrusion as a mask, the deposition angle range of the point source is 60° to 120°.

[0018] The plurality of subpixels include blue subpixels, green subpixels, and red subpixels, and the blue subpixels, green subpixels, and red subpixels all include a blue organic light-emitting layer in common. When the blue organic light-emitting layer is formed on the substrate using a plurality of three-dimensional structures on the substrate as a mask, the deposition angle range of the point source can be 70° to 110°.

[0019] The evaporation source device may include a first evaporation source device comprising a 1-1 evaporation source device, a 1-2 evaporation source device, and a 1-3 evaporation source device arranged in a row along the scanning direction, and a second evaporation source device comprising a 2-1 evaporation source device, a 2-2 evaporation source device, and a 2-3 evaporation source device arranged in a row along the scanning direction, spaced apart from the first evaporation source device in a direction perpendicular to the scanning direction.

[0020] The first- and second-2 evaporation source devices each include a dopant material as the deposition material, and the first- and third-3 evaporation source devices each include a host material as the deposition material.

[0021] The 1-1 evaporation source device includes a plurality of 1-1 point sources arranged in a circle around its upper side, the 1-2 evaporation source device includes a plurality of 1-2 point sources arranged in a circle around its upper side, and the 1-3 evaporation source device includes a plurality of 1-3 point sources arranged in a circle around its upper side, and one of the plurality of 1-1 point sources, one of the plurality of 1-2 point sources and one of the plurality of 1-3 point sources can be located in a straight line.

[0022] The 2-1 evaporation source device includes a plurality of 2-1 point sources arranged in a circle around its upper side, the 2-2 evaporation source device includes a plurality of 2-2 point sources arranged in a circle around its upper side, and the 2-3 evaporation source device includes a plurality of 2-3 point sources arranged in a circle around its upper side, and one of the plurality of 2-1 point sources, one of the plurality of 2-2 point sources, and one of the plurality of 2-3 point sources can be located in a straight line.

[0023] The evaporation source device including the point source may have a cylindrical structure, and the evaporation source device including the linear source may have a rectangular parallelepiped structure that is elongated in the direction perpendicular to the scanning direction.

[0024] To achieve the aforementioned or other objectives, according to another aspect of the embodiment, the deposition system includes a plurality of deposition equipment configured in a cluster or in-line manner, one of which may be the deposition equipment described above. [Effects of the Invention]

[0025] The effects of the vapor deposition equipment and the vapor deposition system according to the embodiments are described as follows.

[0026] According to at least one of the embodiments, whether or not the FMM is used in the vapor deposition process, the organic light emitting layer can be patterned into a side-by-side structure and vapor deposited at different vapor deposition angles according to the three-dimensional structure to improve productivity. As a result, the luminous area ratio is improved, the product life is improved, large-area substrates can be produced, productivity is improved, and the utilization efficiency of the materials of the organic light emitting device is increased.

[0027] According to at least one of the embodiments, since the vapor deposition angle can be freely changed,

[0028] it is possible to solve the problems of deterioration of image quality and yield due to short circuit or current leakage between the cathode electrode and the anode electrode of the organic light emitting device between sub-pixels or within sub-pixels according to the product structure.

[0029] A further scope of applicability of the embodiments will become apparent from the following detailed description. It should be understood that various changes and modifications within the spirit and scope of the embodiments should be clearly understandable to those skilled in the art, so it should be understood that specific embodiments such as the detailed description and the preferred embodiments are merely illustrative.

Brief Description of the Drawings

[0030] [Figure 1] FIG. 1 shows a substrate according to an embodiment. [Figure 2] FIG. 2 shows a state in which a vapor deposition material is vapor deposited on a substrate using an FMM. [Figure 3] FIG. 3 is an enlarged view of the A region illustrated in FIG. 2. [Figure 4] FIG. 4 shows a red organic light emitting device, a green organic light emitting device, and a blue organic light emitting device vapor deposited on the substrate of FIG. 1. [Figure 5] FIG. 5 is a plan view illustrating a vapor deposition system according to a first embodiment. [Figure 6A] Figure 6A is a cross-sectional view taken along the A1-A2 line in the first deposition setup shown in Figure 5. [Figure 6B] Figure 6B is a cross-sectional view taken along the B1-B2 line in the first deposition setup shown in Figure 5. [Figure 7A] Figure 7A is a cross-sectional view taken along the C1-C2 line in the sixth deposition setup shown in Figure 5. [Figure 7B] Figure 7B is a cross-sectional view taken along the D1-D2 line in the sixth deposition setup shown in Figure 5. [Figure 8A] Figure 8A is a plan view illustrating a red subpixel, a green subpixel, and a blue subpixel that constitute a single pixel on a substrate with a protrusion according to the embodiment. [Figure 8B] Figure 8B is a cross-sectional view obtained by cutting along the E1-E2 line at the pixels in Figure 8A. [Figure 9] Figure 9 shows the red, green, and blue organic light-emitting elements deposited on the substrate shown in Figure 8B. [Figure 10] Figure 10 is a cross-sectional view illustrating the vapor deposition system according to the second embodiment. [Figure 11] Figure 11 shows a red organic light-emitting element, a green organic light-emitting element, and a blue organic light-emitting element, each having a two-stack structure, deposited on the substrate shown in Figure 8B. [Figure 12] Figure 12 is a cross-sectional view illustrating the vapor deposition system according to the third embodiment. [Figure 13] Figure 13 is a cross-sectional view illustrating a red organic light-emitting layer, a green organic light-emitting layer, and a blue organic light-emitting layer arranged on a substrate with a three-dimensional structure according to an embodiment. [Figure 14] Figure 14 shows a red organic light-emitting element, a green organic light-emitting element, and a blue organic light-emitting element deposited on a substrate with a three-dimensional structure according to the embodiment. [Figure 15] Figure 15 is a cross-sectional view illustrating the vapor deposition system according to the fourth embodiment. [Figure 16] Figure 16 shows the deposition process of the blue organic light-emitting layer according to the example. [Figure 17] Figure 17 shows the deposition process of the red organic light-emitting layer according to the example. [Figure 18] Figure 18 shows the deposition process of the green organic light-emitting layer according to the example. [Figure 19] Figure 19 is a plan view illustrating the vapor deposition equipment according to the first embodiment. [Figure 20A] Figure 20A is a plan view illustrating the vapor deposition equipment according to the first embodiment. [Figure 20B] Figure 20B shows the vapor deposition equipment according to the first embodiment as viewed along the C1-C2 line. [Figure 20C] Figure 20C shows the vapor deposition equipment according to the first embodiment as viewed along the D1-D2 line. [Figure 21] Figure 21 is a table showing the deposition characteristics of the deposition equipment according to the first embodiment. [Figure 22A] Figure 22A is a plan view illustrating the vapor deposition equipment according to the second embodiment. [Figure 22B] Figure 22B shows the vapor deposition equipment according to the second embodiment as viewed along the C1-C2 line. [Figure 22C] Figure 22C shows the vapor deposition equipment according to the second embodiment as viewed along the D1-D2 line. [Figure 23] Figure 23 is a table showing the deposition characteristics of the deposition equipment according to the second embodiment. [Figure 24A] Figure 24A is a plan view illustrating the vapor deposition equipment according to the third embodiment. [Figure 24B] Figure 24B shows the vapor deposition equipment according to the third embodiment as viewed along the C1-C2 line. [Figure 24C] Figure 24C shows the vapor deposition equipment according to the third embodiment as viewed along the D1-D2 line. [Figure 25] Figure 25 is a table showing the deposition characteristics of the deposition equipment according to the third embodiment. [Figure 26A] Figure 26A is a plan view illustrating the vapor deposition equipment according to the fourth embodiment. [Figure 26B]Figure 26B shows the vapor deposition equipment according to the fourth embodiment as viewed along the C1-C2 line. [Figure 26C] Figure 26C shows the vapor deposition equipment according to the fourth embodiment as viewed along the D1-D2 line. [Figure 27] Figure 27 is a table showing the deposition characteristics of the deposition equipment according to the fourth embodiment. [Figure 28A] Figure 28A is a plan view illustrating the vapor deposition equipment according to the fifth embodiment. [Figure 28B] Figure 28B shows the vapor deposition equipment according to the fifth embodiment as viewed along the C1-C2 line. [Figure 28C] Figure 28C shows the vapor deposition equipment according to the fifth embodiment as viewed along the D1-D2 line. [Figure 29] Figure 29 is a table showing the deposition characteristics of the deposition equipment according to the fifth embodiment. [Figure 30A] Figure 30A shows a nozzle provided on the upper side of a point source according to the first embodiment. [Figure 30B] Figure 30B shows a nozzle provided on the upper side of a point source according to the first embodiment. [Figure 30C] Figure 30C shows a nozzle provided on the upper side of a point source according to the first embodiment. [Figure 31A] Figure 31A shows a nozzle provided on the upper side of a point source according to the second embodiment. [Figure 31B] Figure 31B shows a nozzle provided on the upper side of a point source according to the second embodiment. [Figure 31C] Figure 31C shows a nozzle provided on the upper side of a point source according to the second embodiment. [Figure 32A] Figure 32A shows a nozzle provided on the upper side of a point source according to the third embodiment. [Figure 32B] Figure 32B shows a nozzle provided on the upper side of a point source according to the third embodiment. [Figure 32C] Figure 32C shows a nozzle provided on the upper side of a point source according to the third embodiment.

[0031] The size, shape, and numerical values ​​of the components shown in the drawings do not necessarily correspond to reality. Furthermore, even if the same component is shown with different sizes, shapes, and numerical values ​​in different drawings, this is merely one example on the drawing, and the same component can have the same size, shape, and numerical values ​​in different drawings. [Modes for carrying out the invention]

[0032] The embodiments disclosed herein will be described in detail below with reference to the attached drawings, but identical or similar components will be given the same reference numeral regardless of the drawing reference numerals, and redundant descriptions will be omitted. The suffixes “module” and “part” used for components in the following description are given or used interchangeably for the sake of facilitating the writing of the specification and do not have any distinguishing meaning or role in themselves. The attached drawings are provided to facilitate understanding of the embodiments disclosed herein and do not limit the technical ideas disclosed herein. Furthermore, when an element such as a layer, region, or substrate is referred to as being “on” another component, this includes elements that are directly on other elements or elements that may have other intermediate elements between them.

[0033] In the following, the range of the deposition angle may be determined based on the horizontal direction from left to right or on a horizontal line. In the following, the values ​​listed in each table are variable depending on various variables such as the distance between the target and source of each evaporation source, the position of each evaporation source, and the type of deposition material discharged from each evaporation source. However, the distance between the target and source of a point source can be at least four times greater than the distance between the target and source of a linear source. That is, a point source is located considerably further away from the substrate than a linear source, and the deposition material is deposited on the substrate within a smaller deposition angle range. In a point source, the deposition material is sprayed in a point form through a single nozzle, while in a linear source, the deposition material is sprayed in a line form through multiple nozzles arranged in a row. As will be discussed later, in order to ensure a high angle for spraying the deposition material vertically, it is advantageous to use a point source rather than a linear source.

[0034] The structure of the organic light-emitting device described below is a typical example, and a wide variety of other structural modifications are possible.

[0035] [Evaporation equipment and systems utilizing FMM] Figure 1 shows a substrate according to an embodiment. As shown in Figure 1, a pixel P is defined on the substrate 10, and the pixel P may include a red subpixel SPr, a green subpixel SPg, and a blue subpixel SPb. Although one pixel P is defined in the drawing, multiple pixels P may be arranged on the substrate 10, for example, in a matrix. Although three subpixels SPr, SPg, and SPb are shown in the drawing, more subpixels may be included in a single pixel P.

[0036] A red organic light-emitting element is placed in the red subpixel SPr, a green organic light-emitting element is placed in the green subpixel SPg, and a blue organic light-emitting element is placed in the blue subpixel SPb. This configuration of red, green, and blue organic light-emitting elements allows for the creation of an organic light-emitting display device capable of displaying images.

[0037] The red organic light-emitting element, the green organic light-emitting element, and the blue organic light-emitting element may be deposited onto the substrate 10 using their respective deposition equipment. These deposition equipment are included in a cluster-type deposition system, as shown in Figure 5, but are not limited to this.

[0038] Figure 2 shows how a deposition material is deposited onto a substrate using FMM. Figure 3 is an enlarged view of region A shown in Figure 2. As shown in Figure 2, anode electrodes 11 are placed on the substrate 10 corresponding to the red subpixel SPr, green subpixel SPg, and blue subpixel SPb, respectively. The anode electrodes 11 placed for each of the red subpixel SPr, green subpixel SPg, and blue subpixel SPb are separated from each other and electrically disconnected. Banks 12-1 and 12-2 are placed between the red subpixel SPr, green subpixel SPg, and blue subpixel SPb.

[0039] A substrate 10 equipped with an anode electrode 11 and banks 12-1 and 12-2 is transferred to the deposition equipment, where a predetermined organic light-emitting element is deposited onto the substrate 10.

[0040] The deposition equipment is equipped with an evaporation source device 31. For example, the evaporation source device 31 is located below the chamber and can spray deposition material toward the substrate 10 located above the chamber. The substrate 10 can be positioned so that the anode electrode 11 and banks 12-1 and 12-2 face the evaporation source device 31. Therefore, the deposition material, such as an organic light-emitting material, discharged from the evaporation source device 31 toward the substrate 10 is deposited onto the substrate 10.

[0041] On the other hand, the FMM20 can be positioned between the evaporation source device 31 and the substrate 10. The FMM20 can be positioned as close to the substrate 10 as possible, so that the gap between the FMM20 and the substrate 10 does not widen and reduce the deposition area. The FMM20 may be a mask with openings formed so that the organic light-emitting material is deposited only in a specific area on the substrate 10.

[0042] As shown in Figure 2, an FMM20 is provided with an opening formed in correspondence with the red subpixel SPr on the substrate 10. The opening can correspond to the region between half of the first bank 12-1 located between the blue subpixel SPb and the red subpixel SPr, and half of the second bank 12-2 located between the red subpixel SPr and the green subpixel SPg. A red organic light-emitting material is mounted in the evaporation source device 31.

[0043] The FMM20 is precisely aligned to the substrate 10. The degree of this alignment can be referred to as the alignment position accuracy PPA. In a deposition process using the FMM20, the PPA may be determined by the position tolerance of the pattern on the substrate 10, the position tolerance due to the manufacturing of the FMM20, the deposition shadow tolerance of the FMM20, and the alignment position tolerance of the deposition equipment. Each tolerance may include tolerances for more detailed factors.

[0044] An alignment margin (Mg) of FMM20 must be ensured so that the organic light-emitting material is deposited over the largest possible area on the red subpixel SPr. The alignment margin (Mg) of FMM20 may also be the distance between the edge 20a of FMM20 and the end of the anode electrode 11 exposed by banks 12-1 and 12-2.

[0045] The FMM20 can have a geometric shape such that the red organic light-emitting material is deposited over the largest possible area of ​​the red subpixel SPr. For example, the thickness of the FMM20 is maximum in the region corresponding to each subpixel SPr, SPg, and SPb on the substrate 10, and decreases as you move towards adjacent subpixels and as you get closer to the substrate 10, but this is not limited to this. A variety of shapes for the FMM20 are widely known, so a detailed explanation is omitted.

[0046] On the other hand, an edge 20a is provided adjacent to the opening of the FMM20. The edge 20a can cause a shadow phenomenon. That is, since the edge 20a of the FMM20 is provided at the end of the lower surface separated from the upper surface of the FMM20, a shadow phenomenon can occur as thick as the gap between the edge 20a and the upper surface of the FMM20. Such a shadow phenomenon reduces the area of ​​the organic light-emitting material deposited on the red subpixel SPr, which reduces light extraction and shortens the lifespan.

[0047] On the other hand, the area over which the organic light-emitting material is deposited on the red subpixel SPr via the edge 20a changes depending on the position of the evaporation source device 31.

[0048] For example, the evaporation source device 31 can be located at a distance TS1 between the first target and source, or at a distance TS2 between the second target and source. The deposition angle θ2 of the organic light-emitting material discharged via the edge 20a from the evaporation source device 31 located at a distance TS2 between the second target and source can have a larger deposition angle θ1 than the deposition angle θ1 of the organic light-emitting material discharged via the edge 20a from the evaporation source device 31 located at a distance TS1 between the first target and source.

[0049] In such a case, as shown in Figure 3, the shadow width W2 created by the organic light-emitting material deposited on the deposition surface 15 at a deposition angle θ2 can have a smaller shadow width than the shadow width W1 created by the organic light-emitting material deposited on the deposition surface 15 at a deposition angle θ1. Therefore, the organic light-emitting material ejected at a deposition angle θ2, which is greater than the deposition angle θ1, will be deposited over a larger area in the red subpixel SPr. The deposition angles θ1 and θ2 are angles with respect to a horizontal line. That is, the deposition angles θ1 and θ2 are angles with respect to the horizontal direction or horizontal line from left to right.

[0050] The deposition angles θ1 and θ2 may be defined as angles with respect to the normal line.

[0051] For example, increasing the target-source distances TS1 and TS2 reduces the shadow phenomenon of FMM20 by more than 50%. This expands the deposition area of ​​the red subpixel SPr, thereby achieving a longer lifespan.

[0052] On the other hand, theoretically, if the deposition angle is 90 degrees, the largest area of ​​organic light-emitting material will be deposited on the red subpixel SPr. However, since the organic light-emitting material disperses as it is ejected from the evaporation source 31 and moves along the substrate 10, the evaporation source 31 needs to be located very far away from the substrate 10. In such a case, there is a problem that the size of the deposition equipment becomes very large.

[0053] In the examples, the organic light-emitting material having the largest area on the red subpixel SPr is deposited not only by the distance TS1 and TS2 between the target and source, but also by various structural and positional variations.

[0054] The above explanation has been limited to the deposition of organic light-emitting material on the red subpixel SPr with reference to Figures 2 and 3, but the above explanation can be similarly applied to the deposition of organic light-emitting material on the green subpixel SPg and the blue subpixel SPb, respectively.

[0055] Figure 4 shows the red organic light-emitting element, the green organic light-emitting element, and the blue organic light-emitting element deposited on the substrate 10 shown in Figure 1. As illustrated in Figure 4, the red organic light-emitting element, the green organic light-emitting element, and the blue organic light-emitting element are arranged on the substrate 10. Specifically, the red organic light-emitting element is placed in the red subpixel SPr, the green organic light-emitting element is placed in the green subpixel SPg, and the blue organic light-emitting element is placed in the blue subpixel SPb.

[0056] Specifically, with the red subpixel SPr, a hole injection layer (HIL), a red hole transport layer (R-HTL), a red organic light emission layer (R-EML), and an electron transport layer (ETL) are deposited on the anode electrode E1. With the green subpixel SPg, a hole injection layer (HIL), a green hole transport layer (G-HTL), a green organic light emission layer (G-EML), and an electron transport layer (ETL) are deposited on the anode electrode E1. With the blue subpixel SPb, a hole injection layer (HIL), a hole transport layer (HTL), a blue organic light emission layer (B-EML), and a blue electron transport layer (ETL) are deposited on the anode electrode E1.

[0057] The hole injection layer (HIL), hole transport layer (HTL), electron transport layer (ETL), cathode electrode (E2), and capping layer (CPL) may be commonly formed on the red subpixel (SPr), green subpixel (SPg), and blue subpixel (SPb). The arrangement order of the hole injection layer (HIL) and the hole transport layer (HTL) can be changed. Although not shown, an electron injection layer may be deposited between the electron transport layer (ETL) and the cathode electrode (E2). As described above, the hole injection layer (HIL) and / or the hole transport layer are included in the hole transport structure, the electron transport layer and the electron injection layer are included in the electron transport structure, and the hole transport structure and the electron transport structure may each contain more organic light-emitting layers.

[0058] Meanwhile, a cathode electrode E2 and a capping layer CPL are deposited on the electron transport layer ETL in each of the red subpixel SPr, green subpixel SPg, and blue subpixel SPb.

[0059] On the other hand, as shown in Figure 4, the red organic light-emitting element, the green organic light-emitting element, and the blue organic light-emitting element can have different thicknesses. The distance between the anode electrode E1 and the cathode electrode E2 of the red organic light-emitting element, the distance between the anode electrode E1 and the cathode electrode E2 of the green organic light-emitting element, and the distance between the anode electrode E1 and the cathode electrode E2 of the blue organic light-emitting element may all be different. These thicknesses and distances can be determined by considering the wavelength of the respective color.

[0060] The distance between the anode electrode E1 and the cathode electrode E2 may be designed such that reinforcement interference occurs in each of the red, green, and blue organic light-emitting elements, and that the wavelengths of light from each of these elements satisfy Equation 1. That is, the distance between the anode electrode E1 and the cathode electrode E2 may be designed to be a multiple of the wavelength λ of light in each of the red, green, and blue organic light-emitting elements. This can be expressed by Equation 1.

[0061] [Formula 1] 2nd = mλ

[0062] n represents the effective refractive index of the red organic light-emitting element, the green organic light-emitting element, and the blue organic light-emitting element, respectively. d represents the distance between the anode electrode E1 and the cathode electrode E2 in each of the red organic light-emitting element, the green organic light-emitting element, and the blue organic light-emitting element. m represents the order, and λ represents the wavelength of the light emitted in each of the red organic light-emitting element, the green organic light-emitting element, and the blue organic light-emitting element.

[0063] As shown in Equation 1, the distance d between the anode electrode E1 and the cathode electrode E2 increases as the wavelength λ increases in each of the red, green, and blue organic light-emitting diodes.

[0064] On the other hand, in the top-emitting structure, the anode electrode E1 of each of the red organic light-emitting element, green organic light-emitting element, and blue organic light-emitting element may be a reflective electrode, and the cathode electrode E2 may be a semi-transparent electrode, so that reinforcing interference occurs in each of them. The semi-transparent electrode may be, for example, a single layer of Mg:Ag alloy, or a double layer including a first layer made of Mg:Ag alloy and a second layer made of a transparent conductive material such as ITO, but is not limited to these.

[0065] On the other hand, different distances between the anode electrode E1 and the cathode electrode E2 must be achieved in each of the red organic light-emitting element, green organic light-emitting element, and blue organic light-emitting element, in order to satisfy Equation 1. For this purpose, in the embodiment, the thicknesses of the red organic light-emitting layer R-EML, the green organic light-emitting layer G-EML, and the blue organic light-emitting layer B-EML are designed to be different. In addition to the hole transport layer HTL which is included in all three of the red, green, and blue organic light-emitting elements, the thicknesses of the red hole transport layer R-HTL included in the red organic light-emitting element and the green hole transport layer G-HTL included in the green organic light-emitting element are designed to be different. By designing the thicknesses of the red hole transport layer R-HTL included in the red organic light-emitting element and the green hole transport layer G-HTL included in the green organic light-emitting element to be different, the distances between the anode electrode E1 and the cathode electrode E2 of each of the red, green, and blue organic light-emitting elements become different from each other in order to satisfy Equation 1.

[0066] Therefore, by designing the red organic light-emitting element, green organic light-emitting element, and blue organic light-emitting element to have different distances between their anode electrode E1 and cathode electrode E2, respectively, to satisfy Equation 1, reinforcement interference occurs in each of the red, green, and blue organic light-emitting elements, maximizing their luminous efficiency.

[0067] Figure 5 is a plan view illustrating the vapor deposition system according to the first embodiment.

[0068] As shown in Figure 5, the deposition system 100 according to the first embodiment may be a cluster-type deposition system, but is not limited to this.

[0069] Multiple transfer modules TM1 to TM4 are positioned between the loading equipment LL and the unloading equipment ULL. Multiple deposition equipment CH1 to CH8 are connected to each of the multiple transfer modules TM1 to TM4. Multiple buffer equipment BUF1 to BUF3 are positioned between the multiple transfer modules TM1 to TM4.

[0070] Referring to Figures 2 and 5, the substrate 10 is loaded into the deposition system 100 according to the first embodiment via the loading equipment LL and unloaded to the outside via the unloading equipment ULL. Each of the multiple transfer modules TM1 to TM4 can transfer the substrate 10 to each of the multiple deposition equipment CH1 to CH8 and unload it from each of the deposition equipment CH1 to CH8. For this purpose, each of the multiple transfer modules TM1 to TM4 may be equipped with an arm 110.

[0071] For example, the substrate 10 is loaded into the first transfer module TM1 via the loading equipment LL, and the first transfer module TM1 can transfer and unload the substrate 10 via the arm 110 to the first deposition equipment CH1 and the second deposition equipment CH2 in that order. The substrate 10 is transferred from the first transfer module TM1 to the second transfer module TM2 via the first buffer equipment BUF1. The substrate 10 is transferred and unloaded from the second transfer module TM2 to the third deposition equipment CH3 and the fourth deposition equipment CH4 in that order.

[0072] The substrate 10 is transferred from the second transfer module TM2 to the third transfer module TM3 via the second buffer equipment BUF2. The substrate 10 is then transferred and unloaded from the third transfer module TM3 to the fifth deposition equipment CH5 and the sixth deposition equipment CH6 in that order. The substrate 10 is then transferred from the third transfer module TM3 to the fourth transfer module TM4 via the third buffer equipment BUF3. The substrate 10 is then transferred and unloaded from the fourth transfer module TM4 to the seventh deposition equipment CH7 and the eighth deposition equipment CH8 in that order. The substrate 10 is then unloaded from the fourth transfer module TM4 to the outside via the unloading equipment ULL.

[0073] Although not shown in the diagram, the 9th deposition equipment CH9 is connected to the 4th transfer module TM4, and the substrate 10 that has been unloaded from the 8th deposition equipment CH8 is transferred to and unloaded from the 9th deposition equipment CH9, and then unloaded to the outside via the unloading equipment ULL.

[0074] Table 1 shows the first deposition equipment CH1 to the ninth deposition equipment CH9. [Table 1]

[0075] In Table 1, the deposition angle is the angle with respect to the horizontal line. That is, the deposition angle is the angle with respect to the horizontal direction from left to right or to the horizontal line. The deposition angle may also be defined as the angle with respect to the normal line. The scan direction may also be the direction of movement of the main unit. In a cluster-type deposition system, the main unit moves and the deposition material is deposited on the substrate 10 while the linear source or point source moves relative to the substrate 10, but this is not the only option. The orthogonal direction may also be the direction perpendicular to the scan direction. Referring to Table 1 and Figure 4, the first deposition unit CH1 can deposit a hole injection layer (HIL) or a hole transport layer (HTL), and the second deposition unit CH2 can deposit a green hole transport layer (G-HTL) on the hole transport layer (HTL). The third deposition unit CH3 can deposit a red hole transport layer (R-HTL) on the hole transport layer (HTL), and the fourth deposition unit CH4 can deposit a blue organic light-emitting layer (B-EML) on the hole transport layer (HTL).

[0076] The fifth deposition equipment CH5 can deposit a green organic light-emitting layer G-EML on a green hole transport layer G-HTL, and the sixth deposition equipment CH6 can deposit a red organic light-emitting layer R-EML on a red hole transport layer R-HTL. The seventh deposition equipment CH7 can deposit an electron transport layer ETL on a blue organic light-emitting layer B-EML, a green organic light-emitting layer G-EML, and a red organic light-emitting layer R-EML. The eighth deposition equipment CH8 can deposit an electron injection layer and a cathode electrode E2 on an electron transport layer ETL, and the ninth deposition equipment CH9 can deposit a capping layer CPL on a cathode electrode E2.

[0077] On the other hand, the first deposition equipment CH1, the seventh deposition equipment CH7, and the eighth deposition equipment CH8 can each deposit deposition material onto the substrate 10 using a common metal mask (hereinafter referred to as CMM). The first deposition equipment CH1, the seventh deposition equipment CH7, and the eighth deposition equipment CH8 can each include at least one linear source as an evaporation source device. As shown in Table 1, the hole injection layer HIL, the hole transport layer HTL, the electron transport layer ETL, the electron injection layer, and the cathode electrode E2 are deposited onto the substrate 10 using the CMM.

[0078] The second to sixth deposition equipment CH2 to CH6 can each deposit deposition material onto the substrate 10 using an FMM. Each of the second to sixth deposition equipment CH2 to CH6 can include at least one point source as an evaporation source device. As shown in Table 1, the green hole transport layer G-HTL, the red hole transport layer R-HTL, the blue organic light-emitting layer B-EML, the green organic light-emitting layer G-EML, and the red organic light-emitting layer R-EML are deposited onto the substrate 10 using an FMM.

[0079] For example, an evaporation source device including a point source may have a cylindrical structure, while an evaporation source device including a linear source may have a rectangular parallelepiped structure that is elongated in one direction. An evaporation source device including a point source may include multiple point sources arranged in a circular pattern around its upper side. An evaporation source device including a linear source may include multiple nozzles arranged in one direction on its upper side. For example, an evaporation source device including a linear source may have a rectangular parallelepiped structure that is elongated in an orthogonal direction.

[0080] Figure 6A is a cross-sectional view taken along the A1-A2 line in the first deposition setup of Figure 5. Figure 6B is a cross-sectional view taken along the B1-B2 line in the first deposition setup of Figure 5.

[0081] As shown in Figures 6A and 6B, the first evaporation equipment CH1 may include an evaporation source device 30A. The evaporation source device 30A may be located below the chamber. The evaporation source device 30A may include a main body 33, a plurality of linear sources 34 on the main body 33, etc. The main body 33 can move along the X, Y, and / or Z axes. The plurality of linear sources 34 may each have a rectangular parallelepiped shape that is elongated in the direction orthogonal to the scanning direction. The scanning direction may be the transport direction of the main body 33, for example, away from the first transport module TM1. Although the drawings show three linear sources 34 arranged along the scanning direction, more linear sources may be provided.

[0082] Multiple nozzles 35 are installed above each of the multiple linear sources 34, aligned perpendicularly to each other. The deposition material is ejected through the multiple nozzles 35.

[0083] The first deposition equipment CH1 utilizes two CMMs (CMM-A, CMM-B) to deposit different substrates 10 sequentially or simultaneously.

[0084] On the other hand, excellent homogeneity and uniformity are required for the deposition material deposited on the substrate 10 to have good film quality. Homogeneity can refer to the film quality performance of the deposition material deposited along the scanning direction relative to the substrate 10, and uniformity can refer to the film quality performance of the deposition material deposited along the direction perpendicular to the substrate 10.

[0085] In some cases, the target-source distance TS1 in the linear source 34 is small. For example, the target-source distance TS1 in the linear source 34 can be 500 mm. Under such conditions, as shown in Table 1, the deposition angle range of the linear source 34 in the scanning direction may be 60° to 120° to improve homogeneity (Figure 6A), and the deposition angle range of the linear source 34 in the orthogonal direction may be 22° to 158° to improve uniformity (Figure 6B). That is, even if the deposition angle range of the linear source 34 in the scanning direction is 60° to 120° under conditions where the target-source distance TS1 in the linear source 34 is small, the homogeneity of the deposited material deposited on the substrate 10 is excellent.

[0086] In contrast, under the condition that the distance TS1 between the target and source in the linear source 34 is small, the range of the deposition angle of the linear source 34 in the orthogonal direction is as shown in Figure 6B. When the deposition angle of the deposition material ejected from the leftmost nozzle 35 is 22°, the deposition material is also deposited in the rightmost edge region of the substrate 10. When the deposition angle of the deposition material ejected from the rightmost nozzle 35 is 158°, the deposition material is also deposited in the leftmost edge region of the substrate 10. Therefore, when the range of the deposition angle of the linear source 34 in the orthogonal direction is 22° to 158°, the uniformity of the deposition material deposited on the substrate 10 in the orthogonal direction is improved.

[0087] As described above, evaporation source devices having the same structure as the evaporation source device 30A provided in the first evaporation equipment CH1 are provided in the seventh evaporation equipment CH7 and the eighth evaporation equipment CH8. That is, the first evaporation equipment CH1, the seventh evaporation equipment CH7, and the eighth evaporation equipment CH8 can include a main body 33, a plurality of linear sources 34 on the main body 33, etc. In this case, the distance TS1 between the target and source of the evaporation source devices provided in the first evaporation equipment CH1, the seventh evaporation equipment CH7, and the eighth evaporation equipment CH8 may be the same, but is not limited to this.

[0088] Figure 7A is a cross-sectional view taken along the C1-C2 line in the sixth deposition setup of Figure 5. Figure 7B is a cross-sectional view taken along the D1-D2 line in the sixth deposition setup of Figure 5.

[0089] As shown in Figures 7A and 7B, the sixth deposition equipment CH6 may include an evaporation source device 30B. The evaporation source device 30B may be located below the chamber. The evaporation source device 30B may include a main body 36, a plurality of point sources 37 on the main body 36, etc. The main body 36 can move along the X, Y, and / or Z axes. Nozzles are installed above each of the plurality of point sources 37. One nozzle is installed per point source 37, but more nozzles may be installed. The deposition material is ejected through the nozzles. The drawings show two point sources 37 arranged along the scanning direction and five point sources 37 arranged along the orthogonal direction, but more point sources may be provided.

[0090] The sixth deposition equipment CH6 utilizes two FMMs (FMM-A, FMM-B) to deposit different substrates 10 sequentially or simultaneously.

[0091] In the embodiment, the distance TS2 between the target and source of the point source 37 may be large. For example, the distance TS2 between the target and source of the point source 37 can be at least four times greater than the distance TS1 between the target and source of the linear source (34 in Figure 6A). That is, the point source 37 can be located at least four times further from the substrate 10 than the linear source 34. For example, the distance TS2 between the target and source of the point source 37 can be 2500 mm.

[0092] Under these conditions, as shown in Table 1, the deposition angle range of the point source 37 in the scanning direction is 60° to 120° to improve homogeneity (Figure 7A), and the deposition angle range of the point source 37 in the orthogonal direction may be 60° to 120° to improve uniformity (Figure 7B). In other words, the deposition angle range of the point source 37 in the scanning direction and the deposition angle range of the point source 37 in the orthogonal direction to the scanning direction may be the same.

[0093] As shown in Figures 7A and 7B, even if the range of the deposition angle of the point source 37 in the scanning direction and the range of the deposition angle of the point source 37 in the direction perpendicular to the scanning direction are the same, the homogeneity of the deposited material deposited on the substrate 10 along the scanning direction is excellent, and the uniformity of the deposited material on the substrate 10 deposited along the perpendicular direction is excellent. Because the distance TS2 between the target and source in the point source 37 is large, even if the range of the deposition angle of the point source 37 in the perpendicular direction is 60° to 120°, which is larger than the deposition angle range of the linear source 34, the uniformity of the deposited material on the substrate 10 deposited along the perpendicular direction can be further improved.

[0094] [Table 2]

[0095] In Table 2, the range of the deposition angle in the scanning direction and / or the deposition angle in the orthogonal direction changes as the target-source distances TS1 and TS2 are changed, but this is not a limitation. In the sixth deposition setup CH6, which uses FMM (FMM-A, FMM-B), the thermal influence of the point source 37 is reduced, and two types of deposition materials, such as host and dopant, are deposited with excellent homogeneity, and it can be optimized to reduce shadow effects compared to the first deposition setup CH1, which uses CMM (CMM-A, CMM-B). For this reason, as shown in Table 2, in the sixth deposition setup CH6, the target-source distance TS2 at the point source 37 is at least four times greater than the target-source distance TS1 at the linear source 34 in the first deposition setup CH1, and the range of the deposition angle in the scanning direction and the deposition angle in the orthogonal direction can be 60° to 120°, respectively. On the other hand, if the target-source distance TS2 becomes large, the utilization efficiency of organic materials decreases, and a problem arises in which the deposition angle adjustment limit is reached. To solve these problems, a point source 37 may be included in the evaporation source device 30B that discharges the organic deposition material. For example, the nozzle of the point source 37 may be designed to satisfy a deposition angle range of 60° to 120° in all angles, including the scanning direction and the direction perpendicular to it, in the sixth deposition equipment CH6. Also, the target-source distance TS2 of the point source 37 may be designed to be at least 2500 mm or more to satisfy a deposition angle range of 60° to 120° in all angles. Deposition using a point source 37 designed in this way improves the utilization efficiency of organic materials and eliminates the limitations of deposition angle adjustment.

[0096] In Table 2, the stroke of the evaporation source device is defined as the reciprocating travel distance of the evaporation source devices 30A and 30B. As shown in Figure 5, in the deposition system 100 according to the first embodiment, i.e., a cluster-type deposition system, the evaporation source devices 30A and 30B of each deposition equipment CH1 to CH8 can perform a reciprocating scan of the substrate 10 for deposition on the large-area substrate 10. The stroke can be defined as the travel distance by which the evaporation source devices 30A and 30B reciprocate and scan the substrate 10. As shown in Table 2, the evaporation source device 30A of the first deposition equipment CH1 has a maximum stroke of 3400 mm, and the evaporation source device 30B of the sixth deposition equipment CH6 can have a maximum stroke of 5900 mm. Although not shown, in an in-line type deposition system, the substrate 10 can perform a reciprocating scan of the evaporation source devices 30A and 30B of each deposition equipment CH1 to CH8 for deposition on the large-area substrate 10.

[0097] As described above, evaporation source devices having the same structure as the evaporation source device 30B provided in the sixth evaporation equipment CH6 are provided in the second evaporation equipment CH2 and the fifth evaporation equipment CH5. That is, the second evaporation equipment CH2 to the sixth evaporation equipment CH6 may include a main body 36, a plurality of point sources 37 on the main body 36, etc. In this case, the distance TS2 between the target and source of the evaporation source devices 30B provided in the second evaporation equipment CH2 to the sixth evaporation equipment CH6 may be the same, but is not limited to this.

[0098] On the other hand, the evaporation source devices 30A and 30B of the first deposition equipment CH1 to the eighth deposition equipment CH8 can be moved along the X, Y, and / or Z axes. Therefore, the target-source distance TS2 and the range of each deposition angle perpendicular to the scan direction can be changed at any time to ensure optimal homogeneity and uniformity.

[0099] [Evaporation equipment and systems that utilize protrusions on a substrate] Figure 8A is a plan view illustrating a red subpixel, a green subpixel, and a blue subpixel constituting a single pixel on a substrate with a protrusion according to an embodiment. Figure 8B is a cross-sectional view taken along the E1-E2 line at the pixel in Figure 8A. Figure 9 shows a red organic light-emitting element, a green organic light-emitting element, and a blue organic light-emitting element deposited on the substrate in Figure 8B.

[0100] As illustrated in Figures 8A and 8B, a single pixel P may contain a red subpixel SPr, a green subpixel SPg, and a blue subpixel SPb. Although the figures show three subpixels SPr, SPg, and SPb, a single pixel P may contain more subpixels than this.

[0101] A red organic light-emitting element 41 is placed in the red subpixel SPr, a green organic light-emitting element is placed in the green subpixel SPg, and a blue organic light-emitting element is placed in the blue subpixel SPb. This configuration of the red organic light-emitting element 41, the green organic light-emitting element, and the blue organic light-emitting element allows for the creation of an organic light-emitting display device capable of displaying images.

[0102] As shown in Figure 8B, the red organic light-emitting element 41 may include an anode electrode 42, a red organic light-emitting layer 43 including a hole injection layer 43a, and a cathode electrode 44. Although not shown, the green organic light-emitting element and the blue organic light-emitting element may differ only in the material of their organic light-emitting layers, with the other layers having the same structure as the corresponding layers of the red organic light-emitting element 41.

[0103] A protrusion 45 is positioned between the red subpixel SPr, the green subpixel SPg, and the blue subpixel SPb. The protrusion 45 is positioned on the bank 46. The bank 46 and the protrusion 45 are positioned in the non-emitting area (NEA).

[0104] The protrusion 45 acts as a mask to ensure that the corresponding organic light-emitting element is deposited on each subpixel SPr, SPg, and SPb. Therefore, a separate mask like that used in FMMs is unnecessary, and a larger light-emitting region can be secured compared to deposition using FMMs, resulting in a longer lifespan.

[0105] The protruding portion 45 may include a first layer 47, a second layer 48, and a third layer 49. For example, the first layer 47 and the second layer 48 may be metal layers, and the third layer 49 may be an insulating layer, but this is not limited to them.

[0106] The sides of the first layer 47 extend from the sides of the second layer 48 in the direction of the adjacent subpixel SPr. The first layer 47 may be omitted. The sides of the third layer 49 extend from the sides of the second layer 48 in the direction of the adjacent subpixel SPr. Thus, the extended sides of the third layer 49 and the respective sides of the first layer 47 and the second layer 48 form an undercut structure. An edge 49a is provided at the lower end of the extended sides of the third layer 49. The deposition angle (or range of deposition angles) of the deposition material deposited on the bank 46 or within the undercut structure is limited or determined by the edge 49a. In particular, the deposition angle (or range of deposition angles) of the deposition material is changed by adjusting the target-source distance of each evaporation source device 210-270 in addition to such an edge 49a.

[0107] As shown in Figure 8B, by adjusting the distance between the edge 49a and the target-source of each evaporation source device 210-270, various deposition materials are deposited on the bank 46 or within the undercut structure at different deposition angles.

[0108] For example, the hole injection layer 43a is deposited on the bank 46 at a first deposition angle θa due to the distance between the target and source of the first evaporation source device (210 in Figure 10) and the edge 49a.

[0109] For example, the hole transport layer, the red organic light-emitting layer, the electron transport layer, and the electron injection layer are deposited on the bank 46 at the same deposition angle, i.e., the second deposition angle θb. The second deposition angle θb can be smaller than the first deposition angle θa. For this reason, the edge 49a is provided in a fixed position, so that the target-source distances of the second evaporation source device (220 in Figure 10) to the fifth evaporation source device 250 can be smaller than the target-source distance of the first evaporation source device 210. The target-source distances of the second evaporation source device 220 to the fifth evaporation source device 250 may be the same, but are not limited to this.

[0110] For example, the cathode electrode 44 is deposited on the first layer 47 and / or second layer 48 of the protrusion 45 at a third deposition angle θc, due to the target-source distance of the sixth evaporation source device 260 and the edge 49a. The third deposition angle θc can be smaller than the second deposition angle θb. For this reason, the edge 49a is provided in a fixed position, so that the target-source distance of the sixth evaporation source device 260 can be smaller than the target-source distances of the second evaporation source devices 220 to the fifth evaporation source devices 250.

[0111] The first evaporation source devices 210 to the sixth evaporation source devices 260 may each be included in the first deposition equipment CH1 to the sixth deposition equipment CH6.

[0112] In other words, the greater the distance between the target and source, the greater the deposition angle. The greater the deposition angle, the closer the edge of the layer formed by the deposition material can be to the side of the bank 46.

[0113] As shown in Figure 8B, the organic light-emitting material is deposited as a hole-injection layer 43a closest to the side of the bank 46 by the first evaporation source device 210 having the largest target-source distance, with the largest first deposition angle θa. The hole-injection layer 43a, as a low-resistance organic light-emitting material, must not be electrically connected to the cathode electrode 44 or the first layer 47 and / or second layer 48 of the protrusion 45. Therefore, the low-resistance organic light-emitting material is deposited closest to the side of the bank 46 by being ejected at the largest first deposition angle θa by the first evaporation source device 210 having the largest target-source distance, physically separating it from the cathode electrode 44 and the first layer 47 and / or second layer 48 of the protrusion 45 and electrically disconnecting it.

[0114] Next, the organic light-emitting material ejected at the next largest second deposition angle θb by the second to fifth evaporation source devices 220 to 250, which have the next largest target-source distances, is deposited a little further away from the side of bank 46 as a hole transport layer, red organic light-emitting layer, electron transport layer ETL, and electron injection layer. For example, the hole transport layer, red organic light-emitting layer R-EML, electron transport layer ETL, and electron injection layer are deposited not only on the upper surface of the hole injection layer 43a but also on the upper surface of bank 46.

[0115] The sixth evaporation source device 260, which has the smallest target-source distance, ejects the metallic material at the smallest third deposition angle θc, which is deposited as the cathode electrode 44 furthest from the side of the bank 46. That is, the cathode electrode 44 is deposited not only on the top surface of the bank 46 but also on the first layer 47 and the second layer 48 of the protrusion 45.

[0116] As shown in Figure 9, a red organic light-emitting element, a green organic light-emitting element, and a blue organic light-emitting element are arranged on the substrate. Specifically, a red organic light-emitting element is placed in the red subpixel SPr, a green organic light-emitting element is placed in the green subpixel SPg, and a blue organic light-emitting element is placed in the blue subpixel SPb.

[0117] The red organic light-emitting element, green organic light-emitting element, and blue organic light-emitting element can each include an anode electrode E1, a hole injection layer HIL, a hole transport layer HTL, organic light-emitting layers R-EML, G-EML, B-EML, an electron transport layer ETL, an electron injection layer EIL, a cathode electrode E2, a capping layer CPL, etc. Since these have been explained in Figure 4, a detailed explanation will be omitted here.

[0118] Figure 10 is a cross-sectional view illustrating the vapor deposition system according to the second embodiment.

[0119] Referring to Figure 10, the deposition system 200 according to the second embodiment may be an in-line type deposition system, but is not limited thereto. Figure 10 shows an in-line type deposition system for depositing a red organic light-emitting element (41 in Figures 8A, 8B, and 9). Although not shown, in-line type deposition systems for depositing the green organic light-emitting element and the blue organic light-emitting element shown in Figure 9 may also be provided. For example, in the in-line type deposition system shown in Figure 9, the substrate 40 on which the red organic light-emitting element 41 has been deposited is unloaded from the seventh deposition equipment CH7 and transferred to an in-line type deposition system for depositing the green organic light-emitting element. Similarly, the substrate 40 on which the red organic light-emitting element 41 and the green organic light-emitting element have been deposited is unloaded from the in-line type deposition system and transferred to an in-line type deposition system for depositing the blue organic light-emitting element.

[0120] The deposition system 200 according to the second embodiment may include, but is not limited to, first deposition equipment CH1 to seventh deposition equipment CH7. The first deposition equipment CH1 to seventh deposition equipment CH7 are arranged along a line. Loading equipment LL is connected to the front end of the first deposition equipment CH1, and an unloading device is connected to the rear end of the seventh deposition equipment CH7.

[0121] The substrate 40 is sequentially deposited with red organic light-emitting elements by passing through the first deposition equipment CH1 to the seventh deposition equipment CH7.

[0122] The first deposition equipment CH1 can deposit a hole injection layer HIL onto the substrate 40, and the second deposition equipment CH2 can deposit a hole transport layer HTL on top of the hole injection layer HIL.

[0123] The third deposition equipment CH3 can deposit a red organic luminescent layer (R-EML), a green organic luminescent layer (G-EML), and a blue organic luminescent layer (B-EML) onto the corresponding hole transport layer (HTL).

[0124] The fourth deposition equipment CH4 can deposit an electron transport layer (ETL) onto the corresponding red organic luminescence layer (R-EML), green organic luminescence layer (G-EML), and blue organic luminescence layer (B-EML).

[0125] The fifth deposition equipment CH5 can deposit an electron injection layer EIL on an electron transport layer ETL, the sixth deposition equipment CH6 can deposit a cathode electrode E2 on an electron injection layer EIL, and the seventh deposition equipment CH7 can deposit a capping layer CPL on an electron transport layer E2.

[0126] The first to seventh evaporation equipment CH1 to CH7 can each include a first to seventh evaporation source device 210 to 270. The first to seventh evaporation source devices 210 to 270 can each be located on the lower side of the chamber. The substrate 40 can be located on the upper side of the chamber. Therefore, the evaporation material discharged from each of the first to seventh evaporation source devices 210 to 270 is sprayed upward toward the substrate 40.

[0127] As shown in Figure 8B, one end of the hole injection layer HIL, hole transport layer HTL, organic light-emitting layers R-EML, G-EML, B-EML, electron transport layer ETL, electron injection layer EIL, cathode electrode E2, and capping layer CPL can be positioned differently from each other. The one end of each of the hole transport layer HTL, organic light-emitting layers R-EML, G-EML, B-EML, electron transport layer ETL, and electron injection layer EIL may be located in the same position, but this is not a limitation. As mentioned above, one end of the hole injection layer HIL can be located at the point furthest from the second layer 48 of the protrusion 45, and the one end of each of the hole transport layer HTL, organic light-emitting layers R-EML, G-EML, B-EML, electron transport layer ETL, and electron injection layer EIL can be located at the next furthest point from the second layer 48 of the protrusion 45. One end of the cathode electrode E2 can be located on the first layer 47 and the second layer 48 of the protrusion 45.

[0128] Thus, the distances between the target and source of the first evaporation source devices 210 to 270 of the first evaporation equipment CH1 to 7th evaporation equipment CH7 will be different, so that the hole injection layer HIL, hole transport layer HTL, organic light emission layers R-EML, G-EML, B-EML, electron transport layer ETL, electron injection layer EIL, cathode electrode E2, and one end of the capping layer CPL are positioned differently from each other.

[0129] The first to seventh evaporator sources 210 to 270 may include point sources or linear sources. When the distance between the target and the source is large, the evaporator source may include a point source, and when the distance between the target and the source is small, the evaporator source may include a linear source.

[0130] The first evaporation source devices 210, 5th evaporation source devices 250, and 6th evaporation source devices 260 of the first evaporation equipment CH1, 5th evaporation equipment CH5, and 6th evaporation equipment CH6 can each include multiple point sources. The 5th evaporation source devices 250 and 6th evaporation source devices 260 can also each include multiple linear sources. The second evaporation source devices 220 to 4th evaporation source devices 240, and 7th evaporation source device 270 of the second evaporation equipment CH2 to 4th evaporation equipment CH4 and 7th evaporation equipment CH7 can each include multiple linear sources.

[0131] Although not shown in the illustration, point sources and linear sources may be fastened to a body that is movable along the X, Y, and / or Z axes.

[0132] Table 3 shows the range of the deposition angles for each of the first evaporation source devices 210 to 270 in the first deposition equipment CH1 to the seventh deposition equipment CH7.

[0133] [Table 3]

[0134] In Table 3, the deposition angle range may be the deposition angle range in the scanning direction, but is not limited thereto. As shown in Table 3, in the first deposition equipment CH1, the hole injection layer HIL is deposited on the substrate 40 in a deposition angle range of 60° to 120° using the point sources 211 to 213 of the first evaporation source device 210. One end of the hole injection layer HIL can be positioned closest to the side of the bank (46 in Figure 8B). Preferably, the deposition angle range of the point sources 211 to 213 can be 70° to 110°. In the second deposition equipment CH2 to the fifth deposition equipment CH5, and the seventh deposition equipment CH7, the second evaporation source devices 220 to the fifth evaporation source devices 250, and the seventh evaporation source device 270 utilize a linear source or a point source to deposit the hole transport layer HTL, organic light-emitting layers R-EML, G-EML, B-EML, electron transport layer ETL, electron injection layer EIL, and capping layer CPL onto the substrate 40 at an deposition angle range of 55° to 125°. In this case, one end of each of the hole transport layer HTL, organic light-emitting layers R-EML, G-EML, B-EML, electron transport layer ETL, electron injection layer EIL, and capping layer CPL can be located further from the side of the bank 46 than one end of the hole injection layer HIL. In other words, one end of each of the hole transport layer HTL, organic light-emitting layers R-EML, G-EML, B-EML, electron transport layer ETL, electron injection layer EIL, and capping layer CPL can be positioned closer to the second layer 48 of the protrusion 45.

[0135] In the sixth deposition equipment CH6, the sixth evaporation source device 260 uses a point source or a linear source to deposit the cathode electrode E2 onto the substrate 40 in the deposition angle range of 20° to 160°. In this case, one end of the cathode electrode E2 can be positioned furthest from the side of the bank 46. That is, one end of the cathode electrode E2 is deposited on the first layer 47 and the second layer 48 of the protrusion 45.

[0136] As shown in Figure 10, the target-source distance of the point sources 211 to 213 of the first evaporation source device 210 can be at least four times greater than the target-source distance of the linear sources of the second to fourth evaporation source devices 220 to 240.

[0137] As mentioned above, by using the vapor deposition system 200 according to the second embodiment, as illustrated in Figure 10, it is possible to ensure mass production, solve problems with yield and image quality, material costs, and increased investment in equipment, and secure price competitiveness.

[0138] Figure 11 shows a red organic light-emitting element, a green organic light-emitting element, and a blue organic light-emitting element, each having a two-stack structure, deposited on the substrate shown in Figure 8B.

[0139] As shown in Figure 11, a red organic light-emitting element 41, a green organic light-emitting element, and a blue organic light-emitting element, each having a two-stack structure, are arranged on a substrate 40 which is provided with a protrusion (45 in Figure 8B).

[0140] The red organic light-emitting element 41 may include an anode electrode E1, a first organic light-emitting stack ST11 on the anode electrode E1, a charge generation layer 71 on the first organic light-emitting stack ST11, a second organic light-emitting stack ST12 on the charge generation layer 71, a cathode electrode E2 on the second organic light-emitting stack ST12, and a capping layer CPL on the cathode electrode E2.

[0141] The green organic light-emitting element may include an anode electrode E1, a first organic light-emitting stack ST21 on the anode electrode E1, a charge generation layer 72 on the first organic light-emitting stack ST21, a second organic light-emitting stack ST22 on the charge generation layer 72, a cathode electrode E2 on the second organic light-emitting stack ST22, and a capping layer CPL on the cathode electrode E2.

[0142] The blue organic light-emitting element may include an anode electrode E1, a first organic light-emitting stack ST31 on the anode electrode E1, a charge generation layer 73 on the first organic light-emitting stack ST31, a second organic light-emitting stack ST32 on the charge generation layer 73, a cathode electrode E2 on the second organic light-emitting stack ST32, and a capping layer CPL on the cathode electrode E2.

[0143] The charge generation layers 71-73 can include an n-type charge generation layer n-CGL and a p-type charge generation layer p-CGL on top of the n-type charge generation layer n-CGL.

[0144] Figure 12 is a cross-sectional view illustrating the deposition system according to the third embodiment. Referring to Figure 12, the deposition system 200A according to the third embodiment may be an in-line type deposition system. The deposition system 200A according to the third embodiment can deposit one organic light-emitting element from among the red organic light-emitting element 41, green organic light-emitting element, and blue organic light-emitting element, which have a two-stack structure as shown in Figure 11.

[0145] For the sake of clarity, the deposition system 200A according to the third embodiment may be a deposition system for depositing a red organic light-emitting element 41. In such a case, separate deposition systems for depositing a green organic light-emitting element and a blue organic light-emitting element may be provided.

[0146] Compared with the deposition system 200 according to the second embodiment, the deposition system 200A according to the third embodiment may further include eighth deposition equipment CH8 to twelfth deposition equipment CH12.

[0147] The first organic light-emitting stack ST11 is deposited by the second deposition equipment CH2 to the fourth deposition equipment CH4. The charge generation layer 71 is deposited by the eighth deposition equipment CH8 and the ninth deposition equipment CH9. Specifically, the n-type charge generation layer n-CGL is deposited by the eighth deposition equipment CH8, and the p-type charge generation layer p-CGL is deposited by the ninth deposition equipment CH9. The second organic light-emitting stack ST12 is deposited by the tenth deposition equipment CH10 to the twelfth deposition equipment CH12.

[0148] Table 4 shows the range of the deposition angles for each of the first evaporation source devices 210 to 12th evaporation source devices 296 in the first evaporation equipment CH1 to the twelfth evaporation equipment CH12.

[0149] [Table 4]

[0150] In Table 4, the first evaporation source 210, the eighth evaporation source 280, and the ninth evaporation source 290 in the first deposition equipment CH1, the eighth deposition equipment CH8, and the ninth deposition equipment CH9 can each include a plurality of point sources 211-213, 281-283, and 291-293, respectively. The deposition angle range for point sources 211-213, 281-283, and 291-293 can preferably be 70° to 110°. As shown in Figures 8B and 9, the charge generation layer 71 is also a low-resistance organic light-emitting material and must be electrically disconnected from the cathode electrode E2 and the first and second layers 47 and 48 of the protrusion 45. For this reason, the seventh evaporation source 270 and the eighth evaporation source 280 in the eighth deposition equipment CH8 and the ninth deposition equipment CH9 for depositing the charge generation layer 71 can each include point sources 281-283 and 291-293, respectively. Furthermore, the target-source distances of 281-283 and 291-293 can be at least four times greater than the target-source distance of the linear source. Here, the linear source may be included in multiple units in the second evaporation source devices 220-4th evaporation source devices 240 of the second deposition equipment CH2-4th deposition equipment CH4, and in the tenth evaporation source devices 292-12th evaporation source devices 296 of the tenth deposition equipment CH10-12th deposition equipment CH12.

[0151] As mentioned above, by using the vapor deposition system 200A according to the third embodiment, as illustrated in Figure 12, it is possible to ensure mass production, solve problems with yield and image quality, material costs, and increased investment in equipment, and secure price competitiveness.

[0152] [Evaporation equipment and systems utilizing three-dimensional structures on substrates] Figure 13 is a cross-sectional view illustrating a red organic light-emitting layer, a green organic light-emitting layer, and a blue organic light-emitting layer arranged on a substrate with a three-dimensional structure according to an embodiment.

[0153] As shown in Figure 13, a red organic light-emitting element, a green organic light-emitting element, and a blue organic light-emitting element are arranged on the substrate 80. One pixel P may include a red subpixel SPr, a green subpixel SPg, and a blue subpixel SPb. Although three subpixels SPr, SPg, and SPb are shown in the figure, more subpixels may be included in one pixel P. The red organic light-emitting element, the green organic light-emitting element, and the blue organic light-emitting element may each include a red organic light-emitting layer R-EML, a green organic light-emitting layer G-EML, and a blue organic light-emitting layer B-EML, respectively.

[0154] A red organic light-emitting element is placed in the red subpixel SPr, a green organic light-emitting element is placed in the green subpixel SPg, and a blue organic light-emitting element is placed in the blue subpixel SPb. This configuration of red, green, and blue organic light-emitting elements allows for the creation of an organic light-emitting display device capable of displaying images.

[0155] Meanwhile, three-dimensional structures 81-1 and 81-2 are arranged on the substrate 80. Three-dimensional structures 81-1 and 81-2 may have at least two sides SS1 and SS2. Three-dimensional structures 81-1 and 81-2 may also have a top surface TM, but are not limited to this.

[0156] The three-dimensional structures 81-1 and 81-2 can serve to guide the deposition material so that it is deposited only in specific areas using a self-aligned deposition (SAD) method. For example, a red organic light-emitting layer R-EML is deposited on the first side surface SS1 of the three-dimensional structures 81-1 and 81-2 by a first organic light-emitting material sprayed in a first diagonal direction toward the substrate 80. For example, a green organic light-emitting layer G-EML is deposited on the second side surface SS2 of the three-dimensional structures 81-1 and 81-2 by a second organic light-emitting material sprayed in a second diagonal direction toward the substrate 80. The first side surface SS1 and the second side surface SS2 of the three-dimensional structures 81-1 and 81-2 can have the same inclination angle with respect to the normal direction. The first diagonal direction and the second diagonal direction can be orthogonal to each other.

[0157] On the other hand, the three-dimensional structures 81-1 and 81-2 can act as self-aligned deposition masks to ensure that the organic light-emitting material is deposited only on specific sides of the three-dimensional structures 81-1 and 81-2. As a result, a separate mask such as an FMM is unnecessary, and a larger light-emitting region can be secured compared to deposition using an FMM, thereby achieving a longer lifespan.

[0158] For example, the first organic light-emitting material, when sprayed in the first diagonal direction, is obstructed by the second three-dimensional structure 81-2 and deposited only on the first side surface SS1 of the first three-dimensional structure 81-1. However, the first organic light-emitting material is obstructed by the second three-dimensional structure 81-2 and is not deposited on the second side surface SS2 of the first three-dimensional structure 81-1, the second side surface SS2 of the second three-dimensional structure 81-2, or the separation region between the first three-dimensional structure 81-1 and the second three-dimensional structure 81-2. The separation region is defined on the substrate 80 between the first three-dimensional structure 81-1 and the second three-dimensional structure 81-2.

[0159] Similarly, the second organic light-emitting material, sprayed in the second diagonal direction, is obstructed by the first three-dimensional structure 81-1 and deposited only on the second side surface SS2 of the second three-dimensional structure 81-2. However, the second organic light-emitting material is obstructed by the first three-dimensional structure 81-1 and is not deposited on the first side surface SS1 of the second three-dimensional structure 81-2, the first side surface SS1 of the first three-dimensional structure, or the separation region between the first three-dimensional structure 81-1 and the second three-dimensional structure 81-2.

[0160] On the other hand, the third organic light-emitting material, which is sprayed perpendicularly to the substrate 80, is deposited over the entire surface of the substrate 80 without being obstructed by the first three-dimensional structure 81-1 and the second three-dimensional structure 81-2. That is, the third organic light-emitting material is deposited not only on the separated regions on the substrate 80 but also on the first side surface SS1 and the second side surface SS2 of the first three-dimensional structure 81-1 and the second three-dimensional structure 81-2, respectively. In this way, the third organic light-emitting material is deposited as a blue organic light-emitting layer B-EML in common on each subpixel SPr, SPg, and SPb of the substrate 80. This structure in which the blue organic light-emitting layer B-EML is deposited in common is called a blue common structure.

[0161] As an example, a first organic light-emitting material is deposited as a blue organic light-emitting layer B-EML over the entire surface of the substrate 80, then a second organic light-emitting material is deposited as a red organic light-emitting layer R-EML on the first side surface SS1 of the three-dimensional structures 81-1 and 81-2, and a third organic light-emitting material is deposited as a green organic light-emitting layer G-EML on the second side surface SS2 of the three-dimensional structures 81-1 and 81-2.

[0162] Therefore, as described above, by depositing a red organic light-emitting layer R-EML, a green organic light-emitting layer G-EML, and a blue organic light-emitting layer B-EML onto a substrate 80 equipped with three-dimensional structures 81-1 and 81-2, a larger number of pixels P can be included in a smaller size, resulting in a higher ppi and improved image quality.

[0163] Figure 14 shows a red organic light-emitting element, a green organic light-emitting element, and a blue organic light-emitting element deposited on a substrate with a three-dimensional structure according to the embodiment.

[0164] As shown in Figures 13 and 14, a red organic light-emitting element, a green organic light-emitting element, and a blue organic light-emitting element are deposited onto the substrate 80.

[0165] The red organic light-emitting element, green organic light-emitting element, and blue organic light-emitting element may include an anode electrode E1, multiple organic light-emitting layers, a cathode electrode E2, and a capping layer CPL. The multiple organic light-emitting layers may include a hole injection layer HIL, a hole transport layer HTL, an organic light-emitting layer, an electron transport layer ETL, an electron injection layer, and the like. The organic light-emitting layers may include a red organic light-emitting layer R-EML, a green organic light-emitting layer G-EML, and a blue organic light-emitting layer B-EML.

[0166] The structure shown in Figure 14 is publicly known in Korean Publication No. 10-2023-0162567 (published November 28, 2023), so a detailed explanation will be omitted.

[0167] Figure 15 is a cross-sectional view illustrating the vapor deposition system according to the fourth embodiment.

[0168] Referring to Figure 15, the deposition system 300 according to the fourth embodiment may be an in-line type deposition system. The deposition system 300 according to the fourth embodiment can deposit red organic light-emitting elements, green organic light-emitting elements, and blue organic light-emitting elements onto the substrate 80 and three-dimensional structures 81-1 and 81-2 shown in Figures 13 and 14.

[0169] The deposition system 300 according to the fourth embodiment may include, but is not limited to, first deposition equipment CH1 to seventh deposition equipment CH7. The first deposition equipment CH1 to seventh deposition equipment CH7 are arranged along a line. Loading equipment LL is connected to the front end of the first deposition equipment CH1, and an unloading device is connected to the rear end of the seventh deposition equipment CH7.

[0170] The first deposition equipment CH1 can deposit a hole injection layer (HIL) and / or a hole transport layer (HTL) onto the substrate 80, and the second deposition equipment CH2 can deposit a blue organic light-emitting layer (B-EML) onto the hole transport layer (HTL).

[0171] The third deposition equipment CH3 can deposit an electron barrier layer R-EBL and a red organic light-emitting layer R-EML on a blue organic light-emitting layer B-EML, while the fourth deposition equipment CH4 can deposit an electron barrier layer G-EBL and a green organic light-emitting layer G-EML on a blue organic light-emitting layer B-EML. The electron barrier layers R-EBL and G-EBL may be omitted.

[0172] The fifth deposition equipment CH5 can deposit an electron transport layer (ETL) and / or an electron injection layer on a blue organic luminescence layer (B-EML), a red organic luminescence layer (R-EML), and a green organic luminescence layer (G-EML). The electron injection layer may be omitted.

[0173] The sixth deposition equipment CH6 can deposit the cathode electrode E2 onto the electron injection layer, and the seventh deposition equipment CH7 can deposit the capping layer CPL onto the cathode electrode E2.

[0174] Table 4 shows the range of the deposition angles for each of the first evaporation source devices 310 to 7th evaporation source devices 370 in the first evaporation equipment CH1 to the seventh evaporation equipment CH7.

[0175] [Table 5]

[0176] As shown in Figure 15, the first evaporation equipment CH1 to the seventh evaporation equipment CH7 can each include the first evaporation source device 310 to the seventh evaporation source device 370. The first evaporation source devices 310 to the seventh evaporation source devices 370 can each be located on the lower side of the chamber. The substrate 80 can be located on the upper side of the chamber. Therefore, the evaporation material discharged from each of the first evaporation source devices 310 to the seventh evaporation source devices 370 is sprayed upward toward the substrate 80. The second evaporation source device 320 can include a plurality of point sources 321 to 323. The third evaporation source device 341, the fourth evaporation source device 342, and the sixth evaporation source device 360 ​​can each include a plurality of point sources. The first evaporation source device 310 and the seventh evaporation source device 370 can include a plurality of linear sources. The fifth evaporation source device of the fifth deposition equipment CH5 may include a fifth-first evaporation source device 351 containing multiple linear sources and a fifth-second evaporation source device 352 containing multiple point sources. The fifth-first evaporation source device 351 deposits an electron transport layer (ETL) onto the substrate 80, and the fifth-second evaporation source device 352 deposits an electron injection layer on the electron transport layer (ETL).

[0177] On the other hand, as shown in Figure 16, the deposition material discharged from the second evaporation source 320, i.e., the blue organic light-emitting material, is sprayed perpendicularly toward the substrate 80, so the second evaporation source 320 can be located far away from the substrate 80. For this reason, the second evaporation source 320 can include multiple point sources. Furthermore, the target-source distance of the second evaporation source 320 can be at least four times greater than the target-source distance of the seventh evaporation source 370, which includes multiple linear sources. In other words, the second evaporation source 320 can be positioned at a distance at least four times greater than the target-source distance of the seventh evaporation source 370. In such a case, as shown in Table 5, the deposition angle range of the second evaporation source 320 can be 70° to 110°.

[0178] As shown in Figures 17 and 18, the deposition materials discharged from the third evaporation source devices 331 and 332 of the third deposition equipment CH3 and the fourth evaporation source devices 341 and 342 of the fourth deposition equipment CH4, such as red organic light-emitting material and green organic light-emitting material, are sprayed diagonally toward the substrate 80. Therefore, the third evaporation source devices 331 and 332 and the fourth evaporation source devices 341 and 342 can be positioned diagonally with respect to the substrate 80. For example, the third evaporation source devices 331 and 332 can be positioned on the left side below the chamber in the first diagonal direction relative to the substrate 80, and the fourth evaporation source devices 341 and 342 can be positioned on the right side below the chamber in the second diagonal direction relative to the substrate 80.

[0179] Since the deposition material discharged from the third evaporation source units 331, 332 and the fourth evaporation source units 341, 342 must be deposited restrictively on the first side surface SS1 and the second side surface SS2 of the three-dimensional structure 81 of the substrate 80, the deposition angle range is very narrow. As shown in Table 5, the deposition angle range for the third evaporation source units 331, 332 is 20° to 30°, and the deposition angle range for the fourth evaporation source units 341, 342 can be 150° to 160°. If the deposition angle range is determined horizontally from right to left or relative to a horizontal line, the deposition angle range for the third evaporation source units 331, 332 is 150° to 160°, and the deposition angle range for the fourth evaporation source units 341, 342 can be 20° to 30°.

[0180] As mentioned above, by using the deposition system 300 according to the fourth embodiment, as illustrated in Figure 15, it is possible to ensure mass production, solve problems with yield and image quality, material costs, and increased investment in equipment, and secure price competitiveness.

[0181] [Equipped with high-angle vapor deposition] Figure 19 is a plan view illustrating the deposition equipment according to the first embodiment. Referring to Figure 19, the deposition equipment 400 according to the first embodiment may be a high-angle deposition equipment capable of spraying the deposition material in a nearly vertical direction. Here, high angle refers to an angle that causes the deposition material to be sprayed within a deposition angle range of at least 60° to 120°.

[0182] As mentioned above, the high-angle deposition equipment among the multiple deposition equipment of the deposition systems 100, 200, 200A, and 300 according to the first to fourth embodiments is as shown in Table 6.

[0183] [Table 6]

[0184] As shown in Table 6, in the deposition system according to the first embodiment (100 in Figure 5), the second to sixth evaporation source devices of the second deposition equipment CH2 to the sixth deposition equipment CH6 can each include multiple point sources. As shown in Figures 2, 3, and 5, the second to sixth evaporation source devices deposit deposition material onto the substrate 10 within a deposition angle range of 60° to 120°, thereby forming an electron transport layer (ETL), an electron transport layer (ETL), a blue organic light-emitting layer (B-EML), a green organic light-emitting layer (G-EML), and a red organic light-emitting layer (R-EML). In the deposition system according to the second embodiment (200 in Figure 10), the first evaporation source device 210 of the first deposition equipment CH1 can include multiple point sources. As shown in Figures 8A, 8B, 9, and 10, the first evaporation source device 210 deposits deposition material onto the substrate 40 within a deposition angle range of 60° to 120°, thereby forming a hole injection layer (HIL). In the deposition system according to the third embodiment (200A in Figure 12), the first evaporation source device 210, the fifth evaporation source device 250, and the sixth evaporation source device 260 of the first evaporation equipment CH1, the fifth evaporation equipment CH5, and the sixth evaporation equipment CH6 can each include multiple point sources. As shown in Figures 8A, 8B, 11, and 12, the first evaporation source device 210, the fifth evaporation source device 250, and the sixth evaporation source device 260 each deposit deposition material onto the substrate 40 within an evaporation angle range of 60° to 120°, thereby forming a hole injection layer HIL, an n-type charge generation layer n-CGL, and a p-type charge generation layer p-CGL.

[0185] In the fourth embodiment of the deposition system (300 in Figure 15), the second evaporation source device 320 of the second deposition equipment CH2 can include multiple point sources. As shown in Figures 13 to 15, the second evaporation source device 320 deposits deposition material onto the substrate 80 within a deposition angle range of 70° to 110°, thereby forming a blue organic light-emitting layer (B-EML).

[0186] On the other hand, as shown in Figure 19, the deposition equipment 400 according to the first embodiment may include two evaporation source devices 410 and 450. That is, the first evaporation source device 410 and the second evaporation source device 450 can be positioned spaced apart from each other. For example, with respect to a virtual line determined along the scanning direction, the first evaporation source device 410 may be positioned above the virtual line, and the second evaporation source device 450 may be positioned below the virtual line. In such a case, the first evaporation source device 410 can spray the deposition material onto the underside of one side of the substrate 500, and the second evaporation source device 450 can spray the deposition material onto the underside of the other side of the substrate 500.

[0187] The first evaporation source device 410 may include the first-first evaporation source device 420, the first-second evaporation source device 430, and the first-third evaporation source device 440. For example, the first-first evaporation source device 420, the first-second evaporation source device 430, and the first-third evaporation source device 440 may be installed adjacent to each other along the scanning direction. Although three evaporation source devices 420-440 are shown in the drawings, more evaporation source devices may be provided.

[0188] The first-second evaporation source device 430 includes a dopant material as the deposition material, and the first-first evaporation source device 420 and the first-third evaporation source device 440 can each include a host material as the deposition material.

[0189] The first-first evaporation source device 420 includes a plurality of first-first point sources 421 to 423 arranged in a circle around its upper side, the first-second evaporation source device 430 includes a plurality of first-second point sources 431 to 433 arranged in a circle around its upper side, and the first-third evaporation source device 440 may include a plurality of first-third point sources 441 to 443 arranged in a circle around its upper side. The drawings show seven first-first point sources 421 to 423, seven first-second point sources 431 to 433, and seven first-third point sources 441 to 443, but more point sources may be provided.

[0190] The 1st-1 point sources 421-423, 1st-2 point sources 431-433, and 1st-3 point sources 441-443 are each inserted into the main body. The 1st-1 point sources 421-423, 1st-2 point sources 431-433, and 1st-3 point sources 441-443 can each be attached to and detached from the main body. A point source that has run out of deposition material rotates by a certain angle and is replaced with a new point source.

[0191] Of the multiple first-point sources 421 to 423, one (421) may be currently in use in the evaporation process, another (422) may be being preheated for use in the next evaporation process, and the remaining (423) may be on standby.

[0192] Of the multiple first- and second-point sources 431 to 433, one (431) may be currently in use in the evaporation process, another (432) may be preheating for use in the next evaporation process, and the remaining one (433) may be on standby.

[0193] Of the multiple first-to-third point sources 441-443, one (441) may be currently in use in the evaporation process, another (442) may be preheating for use in the next evaporation process, and the remaining one (443) may be on standby.

[0194] In such a case, one of the multiple first-first point sources 421 to 423 (421), one of the multiple first-second point sources 431 to 433 (431), and one of the multiple first-third point sources 441 to 443 (441) are located in a straight line (511) and can be used in the evaporation process. Here, the direction of the straight line (511) may be the same as the scanning direction. As a result, the host material discharged from the first-first evaporation source device 420, the dopant material discharged from the first-second evaporation source device 430, and the host material discharged from the first-third evaporation source device 440 are deposited on the substrate 500 in that order along the scanning direction, thereby improving the homogeneity of the deposited film on the substrate 500.

[0195] When the deposition material runs out in one of the multiple first-first point sources 421-423 (421), one of the multiple first-second point sources 431-433 (431), or one of the multiple first-third point sources 441-443 (441), the first-first evaporation source device 420, the first-second evaporation source device 430, and / or the first-third evaporation source device 440 rotate so that one of the multiple first-first point sources 421-423 (422), one of the multiple first-second point sources 431-433 (432), and / or one of the multiple first-third point sources 441-443 (442) are aligned in a straight line (511) and can be used in the evaporation process. At this time, the rotation may be in a clockwise direction, but is not limited to this.

[0196] The second evaporation source device 450 may include a second-first evaporation source device 460, a second-second evaporation source device 470, and a second-third evaporation source device 480. For example, the second-first evaporation source device 460, the second-second evaporation source device 470, and the second-third evaporation source device 480 are installed adjacent to each other along the scanning direction. Although three point sources 460-480 are shown in the drawing, more point sources may be provided.

[0197] The second-second evaporation source device 470 includes a dopant material as the deposition material, while the second-first evaporation source device 460 and the second-third evaporation source device 480 can each include a host material as the deposition material.

[0198] The second-first evaporation source device 460 includes a plurality of second-first point sources 461 to 463 arranged in a circle around its upper side, the second-second evaporation source device 470 includes a plurality of second-second point sources 471 to 473 arranged in a circle around its upper side, and the second-third evaporation source device 480 may include a plurality of second-third point sources 481 to 483 arranged in a circle around its upper side. The drawings show seven second-first point sources 461 to 463, seven second-second point sources 471 to 473, and seven second-third point sources 481 to 483, but more point sources may be provided.

[0199] The 2-1 point sources 461-463, 2-2 point sources 471-473, and 2-3 point sources 481-483 are each inserted into the main body. The 2-1 point sources 461-463, 2-2 point sources 471-473, and 2-3 point sources 481-483 can each be attached to and detached from the main body. A point source that has run out of deposition material rotates by a certain angle and is replaced with a new point source.

[0200] Of the multiple second-first point sources 461 to 463, one (461) may be currently in use in the evaporation process, another (462) may be being preheated for use in the next evaporation process, and the remaining one (463) may be on standby.

[0201] Of the multiple second-point sources 471 to 473, one (471) may be currently in use in the evaporation process, another (472) may be being preheated for use in the next evaporation process, and the remaining one (473) may be on standby.

[0202] One of the multiple second- and third-point sources 481 to 483 (481) may currently be in use in the evaporation process, another (482) may be preheating for use in the next evaporation process, and the remaining (483) may be on standby. In such a case, one of the multiple second-first point sources 461 to 463 (461), one of the multiple second-second point sources 471 to 473 (471), and one of the multiple second- and third-point sources 481 to 483 (481) may be located in a straight line (512). Here, the direction of the straight line (512) may be the same as the scanning direction. This improves the homogeneity of the deposited film on the substrate 500 by depositing the host material ejected from the second-first evaporation source device 460, the dopant material ejected from the second-second evaporation source device 470, and the host material ejected from the second-third evaporation source device 480 in that order along the scanning direction.

[0203] If the deposition material runs out in one of the multiple second-first point sources 461-463 (461), one of the multiple second-second point sources 471-473 (471), or one of the multiple second-third point sources 481-483 (481), the second-first point source, the second-second evaporation source device 470 and / or the second-third evaporation source device 480 rotate so that one of the multiple second-first point sources 461-463 (462), one of the multiple second-second point sources 471-473 (472), and / or one of the multiple second-third point sources 481-483 (482) can be positioned in a straight line (512). In this case, the rotation may be in a clockwise direction, but is not limited to this.

[0204] Figure 20A is a plan view illustrating the vapor deposition equipment according to the first embodiment. Figure 20B shows the vapor deposition equipment according to the first embodiment viewed along the C1-C2 line. Figure 20C shows the vapor deposition equipment according to the first embodiment viewed along the D1-D2 line. Figure 21 is a table showing the vapor deposition characteristics of the vapor deposition equipment according to the first embodiment.

[0205] As shown in Figures 20A, 20B, and 20C, the evaporation equipment according to the first embodiment is equipped with a first evaporation source device 410 and a second evaporation source device 450, each containing a plurality of point sources 420-440 and 460-480, which have a cylindrical structure.

[0206] As shown in Figures 20A, 20B, 20C, and 21, the target-source distance TS of point sources 420-440 and 460-480 can be at least four times greater than the target-source distance TS of a linear source. For example, the target-source distance TS of point sources 420-440 and 460-480 can be 2500 mm. Here, the point sources may be the 1-1 evaporation source device 420, the 1-2 evaporation source device 430, the 1-3 evaporation source device 440, the 2-1 evaporation source device 460, the 2-2 evaporation source device 470, and / or the 2-3 evaporation source device 480 in Figure 20a. In this case, the deposition angle range for point sources 420-440 and 460-480 in the scanning direction is 60°-120°, and the deposition angle range for point sources 420-440 and 460-480 in the direction perpendicular to the scanning direction can also be 60°-120°. The homogeneity of the film deposited on the substrate 500 is excellent at 92.5%, and the uniformity is also excellent at less than 1%.

[0207] Figure 22A is a plan view illustrating the vapor deposition equipment according to the second embodiment. Figure 22B shows the vapor deposition equipment according to the second embodiment viewed along the C1-C2 line. Figure 22C shows the vapor deposition equipment according to the second embodiment viewed along the D1-D2 line. Figure 23 is a table showing the vapor deposition characteristics of the vapor deposition equipment according to the second embodiment.

[0208] As shown in Figures 22A, 22B, and 22C, the deposition equipment according to the second embodiment may include an evaporation source device 600 that includes a plurality of linear sources 610 to 630. Each of the plurality of linear sources 610 to 630 may include a plurality of nozzles 611 to 613 provided above it.

[0209] The deposition equipment according to the second embodiment can be applied to the first deposition equipment CH1, the fifth deposition equipment CH5, and the seventh deposition equipment CH7 in the deposition system according to the fourth embodiment (300 in Figure 15). The first evaporation source device 310 of the first deposition equipment CH1, the 5-1 evaporation source device 351 of the fifth deposition equipment CH5, and the seventh evaporation source device 370 of the seventh deposition equipment CH7 can include multiple linear sources. For example, the multiple linear sources are installed along the scanning direction. In such a case, each of the multiple linear sources may have a long rectangular parallelepiped structure along a direction perpendicular to the scanning direction.

[0210] As shown in Figures 22A, 22B, 22C, and 23, the target-source distance TS of the linear source can be 190 mm. Here, the linear source can include at least one of the multiple linear sources 610-630 in Figure 22A. In such a case, the deposition angle range of the linear sources 610-630 in the scanning direction can be 30°-150°, and the deposition angle range of the linear sources 610-630 in the direction orthogonal to the scanning direction can be 8°-172°. The homogeneity of the film deposited on the substrate 650 is 76.8%, and the uniformity is less than 3%.

[0211] The deposition equipment according to the second embodiment offers excellent material utilization efficiency and does not require the use of mixed materials (host and dopant), making it useful for deposition of a common layer that does not affect homogeneity. The common layer may be a layer that is common to and simultaneously formed over the entire area of ​​the substrate, i.e., the red subpixel SPr, the green subpixel SPg, and the blue subpixel SPb.

[0212] Figure 24A is a plan view illustrating the vapor deposition equipment according to the third embodiment. Figure 24B shows the vapor deposition equipment according to the third embodiment viewed along the C1-C2 line. Figure 24C shows the vapor deposition equipment according to the third embodiment viewed along the D1-D2 line. Figure 25 is a table showing the vapor deposition characteristics of the vapor deposition equipment according to the third embodiment.

[0213] As shown in Figures 24A, 24B, and 24C, the deposition equipment according to the third embodiment may include an evaporation source device 700 containing a plurality of linear sources 710 to 730. For example, the plurality of linear sources 710 to 730 are arranged along the scanning direction. In such a case, each of the plurality of linear sources 710 to 730 may have a long rectangular parallelepiped structure along a direction perpendicular to the scanning direction. Each of the plurality of linear sources 710 to 730 may include a plurality of nozzles 711 to 713 provided on its upper side.

[0214] As shown in Figures 24A, 24B, 24C, and 25, the target-source distance TS of linear sources 710-730 is 500 mm, which is larger than the target-source distance TS of linear sources 610-630 shown in Figure 22. In this case, the deposition angle range of linear sources 710-730 in the scanning direction is 62°-118°, and the deposition angle range of linear sources 710-730 in the direction orthogonal to the scanning direction can be 21°-159°. The homogeneity of the film deposited on the substrate 750 is excellent at 91.0%, and the uniformity is excellent at less than 2%.

[0215] The deposition equipment according to the third embodiment is useful for deposition of common layers and organic light-emitting layers where the homogeneity is affected by the application of the materials to be mixed (host and dopant). Preferably, since the deposition equipment according to the third embodiment has relatively little heat transfer, it can be usefully applied to deposition equipment that utilizes FMM (CH2 to CH6 in Figure 5).

[0216] Figure 26A is a plan view illustrating the vapor deposition equipment according to the fourth embodiment. Figure 26B shows the vapor deposition equipment according to the fourth embodiment as viewed along the C1-C2 line. Figure 26C shows the vapor deposition equipment according to the fourth embodiment as viewed along the D1-D2 line. Figure 27 is a table showing the vapor deposition characteristics of the vapor deposition equipment according to the fourth embodiment.

[0217] As shown in Figures 26A, 26B, and 26C, the deposition equipment according to the fourth embodiment may include an evaporation source device 800 that includes two point source rows 810 and 820, each having a cylindrical structure. Each of the two point source rows 810 and 820 may include multiple point sources.

[0218] The first point source row 810 is arranged along an orthogonal direction, and the second point source row 820 is arranged along an orthogonal direction, spaced apart from the first point source row 810.

[0219] The first point source row 810 is installed adjacent to the starting point in the scanning direction, and the second point source row is installed adjacent to the end point in the scanning direction. The multiple point sources included in the first point source row 810 are installed so as to be inclined in the first diagonal direction with respect to the substrate 850. The multiple point sources included in the second point source row 820 are installed so as to be inclined in the second diagonal direction with respect to the substrate 850. The first diagonal direction and the second diagonal direction may be orthogonal to each other.

[0220] The deposition equipment according to the fourth embodiment having the structure described above can be applied to the sixth deposition equipment CH6 of the deposition system according to the second embodiment (200 in Figure 10), the sixth deposition equipment CH6 of the deposition system according to the third embodiment (200A in Figure 12), and the sixth deposition equipment CH6 of the deposition system according to the fourth embodiment (300 in Figure 15).

[0221] As shown in Figures 26A, 26B, 26C, and 27, the target-source distance TS of the point source can be 400 mm. The point source can include at least one of the multiple point sources shown in Figure 26A. In such a case, the deposition angle range of the point source in the scanning direction can be 20° to 160°, and the deposition angle range of the point source in the direction perpendicular to the scanning direction can be 15° to 165°. The homogeneity of the film deposited on the substrate 850 is perfect at 100%, and the uniformity is excellent at less than 2%.

[0222] The deposition equipment according to the fourth embodiment can be applied to deposition equipment that reduces heat transfer by reducing the distance TS between the target and source of the point source in order to satisfy the product by reducing the deposition angle.

[0223] Figure 28A is a plan view illustrating the vapor deposition equipment according to the fifth embodiment. Figure 28B shows the vapor deposition equipment according to the fifth embodiment viewed along the C1-C2 line. Figure 28C shows the vapor deposition equipment according to the fifth embodiment viewed along the D1-D2 line. Figure 29 is a table showing the vapor deposition characteristics of the vapor deposition equipment according to the fifth embodiment.

[0224] As shown in Figures 28A, 28B, and 28C, the deposition equipment according to the fifth embodiment can be applied to deposition equipment for depositing deposition material using a self-aligned deposition method on a substrate 80 equipped with a three-dimensional structure (81-1 and 81-2 in Figure 13). As an example, the deposition equipment according to the fifth embodiment can be applied to the third deposition equipment CH3 and the fourth deposition equipment CH4 of the deposition system according to the fourth embodiment (300 in Figure 15).

[0225] The evaporation source device 900 of the deposition equipment according to the fifth embodiment may include a plurality of point sources 910. The plurality of point sources 910 are installed in a line along an orthogonal direction. The plurality of point sources 910 are installed so as to be inclined diagonally with respect to the substrate.

[0226] As shown in Figures 28A, 28B, 28C, and 29, the target-source distance TS of the point source 910 can be 320 mm. In this case, the deposition angle range of the point source 910 in the scanning direction is 17° to 163°, and the deposition angle range of the point source 910 in the direction perpendicular to the scanning direction can be 12° to 168°. The homogeneity of the film deposited on the substrate is perfect at 100%, and the uniformity is excellent at less than 2%.

[0227] The nozzle mounted above the point source can have a variety of shapes. By changing the shape of the discharge port, the nozzle mounted above the point source can adjust the deposition angle (or range of deposition angles) and / or discharge direction of the deposition material. The nozzle will be described with reference to Figures 30A to 32C.

[0228] Figures 30A, 30B, and 30C show a nozzle provided on the upper side of a point source according to the first embodiment.

[0229] As shown in Figures 30A, 30B, and 30C, the nozzle 1010 provided above the point source according to the first embodiment may include a discharge port 1012 that can adjust the deposition angle (or range of deposition angles) and / or discharge direction of the deposition material 1100.

[0230] The discharge port 1012 has a circular shape, and its end can be positioned on a horizontal plane. This allows the vapor deposition material 1100 to be discharged from the discharge port 1012 perpendicular to the ground.

[0231] Figures 31A, 31B, and 31C show a nozzle provided on the upper side of a point source according to the second embodiment.

[0232] As shown in Figures 31A, 31B, and 31C, the nozzle 1020 provided above the point source according to the second embodiment may include a discharge port 1022 that can adjust the deposition angle (or range of deposition angles) and / or discharge direction of the deposition material 1200.

[0233] The discharge port 1022 has a circular shape, and its end can be positioned on a sloped surface. This allows the vapor deposition material 1200 to be discharged from the discharge port 1022 in a diagonal direction relative to the ground.

[0234] Figures 32A, 32B, and 32C show a nozzle provided on the upper side of a point source according to the third embodiment.

[0235] As shown in Figures 32A, 32B, and 32C, the nozzle 1030 provided above the point source according to the third embodiment may include a discharge port 1032 that can adjust the deposition angle (or range of deposition angles) and / or discharge direction of the deposition material 1300.

[0236] The discharge port 1032 has a triangular shape, and its end can be positioned on an inclined surface. This allows the vapor deposition material 1300 to be discharged from the discharge port 1032 in a diagonal direction relative to the ground.

[0237] As shown in Figures 31B and 32B, even though the ends of the discharge ports 1022 and 1032 are both located on the same slope, the discharge shapes of the vapor deposition materials 1200 and 1300 discharged from the circular discharge port 1022 and the triangular discharge port 1032 are different.

[0238] The detailed description above should not be interpreted restrictively in any way and should be considered illustrative. The scope of the examples should be determined by a reasonable analysis of the attached claims, and all modifications within the equivalent scope of the examples are included within the scope of the examples.

Claims

1. In a deposition apparatus for manufacturing each of multiple subpixels having a side-by-side structure on a substrate, It includes an evaporation source device located beneath the substrate and discharging a deposition material toward the substrate, The evaporation source device includes a point source or a linear source. The point source is located at a distance of at least four times greater from the substrate than the linear source, and is part of the deposition equipment.

2. The deposition equipment according to claim 1, wherein the range of the deposition angle of the point source in the scanning direction and the range of the deposition angle of the point source in the direction perpendicular to the scanning direction are the same.

3. The multiple subpixels include blue subpixels, green subpixels, and red subpixels. The deposition equipment according to claim 1, wherein the blue subpixel, the green subpixel, and the red subpixel each include a plurality of organic light-emitting layers.

4. When forming at least one of the plurality of organic light-emitting layers on the substrate using a mask located between the substrate and the point source, the deposition angle range of the point source is 60° to 120°. The deposition equipment according to claim 3, wherein at least one organic light-emitting layer is individually formed on the blue subpixel, the green subpixel, and the red subpixel by the mask.

5. The multiple subpixels include blue subpixels, green subpixels, and red subpixels. Each of the blue subpixel, green subpixel, and red subpixel includes a hole injection layer on the anode electrode and at least one stack structure on the hole injection layer. The deposition equipment according to claim 1, wherein when the hole injection layer is formed on the substrate using the protrusions between the plurality of subpixels as a mask, the deposition angle range of the point source is 60° to 120°.

6. The aforementioned at least one stack structure includes a first stack structure and a second stack structure, Each of the blue subpixel, the green subpixel, and the red subpixel further includes a charge generation layer between the first stack structure and the second stack structure. The deposition equipment according to claim 5, wherein when the charge generation layer is formed on the substrate using the protrusion as a mask, the deposition angle range of the point source is 60° to 120°.

7. The multiple subpixels include blue subpixels, green subpixels, and red subpixels. The blue subpixel, the green subpixel, and the red subpixel all contain a blue organic light-emitting layer in common. The deposition equipment according to claim 1, wherein when a blue organic light-emitting layer is formed on the substrate using a plurality of three-dimensional structures on the substrate as a mask, the deposition angle range of the point source is 70° to 110°.

8. The evaporation source device includes a first evaporation source device, a first evaporation source device, and a first evaporation source device, and a first evaporation source device, which are arranged in a line along the scanning direction. The vapor deposition equipment according to claim 1, further comprising a second evaporation source device including a second-first evaporation source device, a second-second evaporation source device, and a second-third evaporation source device, which are spaced apart from the first evaporation source device along a direction orthogonal to the scanning direction and arranged in a line along the scanning direction.

9. The first- and second-2 evaporation source devices each include a dopant material as the deposition material, The vapor deposition equipment according to claim 8, wherein the first-first evaporation source device, the first-third evaporation source device, the second-first evaporation source device, and the second-third evaporation source device each include a host material as the vapor deposition material.

10. The 1-1 evaporation source device includes a plurality of 1-1 point sources arranged in a circular pattern around its upper side, The first- and second evaporation source devices include a plurality of first- and second point sources arranged in a circular pattern around their upper side, The first-to-third evaporation source device includes a plurality of first-to-third point sources arranged in a circular pattern around its upper side, The vapor deposition equipment according to claim 8, wherein one of the plurality of first-1 point sources, one of the plurality of first-2 point sources, and one of the plurality of first-3 point sources are located in a straight line.

11. The 2-1 evaporation source device includes a plurality of 2-1 point sources arranged in a circular pattern around its upper side, The 2-2 evaporation source device includes a plurality of 2-2 point sources arranged in a circular pattern around its upper side, The second- and third evaporation source devices include a plurality of second- and third point sources arranged in a circular pattern around their upper side, The vapor deposition equipment according to claim 8, wherein one of the plurality of second-first point sources, one of the plurality of second-second point sources, and one of the plurality of second-third point sources are located in a straight line.

12. The evaporation source device, including the point source, has a cylindrical structure. The evaporation source device including the linear source has a rectangular parallelepiped structure that is elongated in the direction perpendicular to the scanning direction, according to claim 1.

13. Includes multiple deposition equipment configured in a cluster or in-line manner, A vapor deposition system wherein one of the plurality of vapor deposition equipment is the vapor deposition equipment described in any one of claims 1 to 9.

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