Process chamber, semiconductor process equipment, and thin film deposition method

Abstract

This application provides a process chamber, semiconductor process equipment, and a thin film deposition method, the process chamber comprising a reaction chamber on which a base for placing a wafer is installed, a heating chamber communicating with the reaction chamber and having a heat radiation device at its top that radiates heat inward, and a transport device installed inside the reaction chamber that can place a wafer and transport the wafer between the reaction chamber and the heating chamber. The process chamber, semiconductor process equipment, and thin film deposition method according to this application can improve heating efficiency and heating uniformity for wafers.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing, and more specifically, to process chambers, semiconductor process equipment, and thin film deposition methods.

Background Art

[0002] Magnetron sputtering is one of the Physical Vapor Deposition (PVD) technologies and is the most widely used thin film manufacturing technology in the semiconductor industry. With the development of integrated circuits, in order to reduce chip loss and RC delay and improve chip speed, copper with a low resistivity has gradually replaced other materials and is widely applied to the interconnect process in the post-process of semiconductor manufacturing.

[0003] In conventional copper interconnection processes, dual damascene structures are widely used because copper is difficult to etch. In copper damascene structures, via holes and interconnection line trenches are first formed in the intermetallic dielectric layer by etching, then a barrier layer (e.g., TiN) and a copper seed layer are deposited by PVD, and finally, a large amount of copper is deposited by chemical plating. When depositing the copper seed layer, the characteristic size of the chip becomes smaller and smaller, increasing the aspect ratio of the trenches. When depositing copper, not all metal atoms are deposited one layer at a time along a direction perpendicular to the bottom of the trench. As a result, the growth rate of the copper thin film at the trench opening is fast, causing the deposits at the top of the trench to overhang and block the opening. This creates a cavity at the bottom of the trench, affecting the electrical performance of the chip. To address this, in order to ensure that the copper material smoothly fills the via hole structure, it is usually necessary to perform a reflow process of the copper thin film after completing the deposition processes of the barrier layer (e.g., TiN) and the copper seed layer. Since particle size greatly affects the fusion thermodynamic properties of a metal, as the particle size of the metal decreases, its melting temperature also decreases, and both the surface energy and surface tension of copper at the nanoscale increase. Based on this, when performing a copper reflow process, heating the copper to over 300°C allows the molten copper thin film atoms to gradually move to the bottom of the trench due to the surface tension of the copper and the capillary action of the trench, thereby achieving more favorable filling.

[0004] Conventional PVD equipment typically uses an additional heat radiation source inside the chamber to heat the wafer during the reflow process. However, currently, the heat radiation source is sometimes placed far away from the wafer, around the chamber, resulting in low wafer heating efficiency and poor heating uniformity. In some cases, the heat radiation source is installed in the transport equipment used to transport the shielding plate, but in this method, it is difficult to concentrate the radiated heat on the wafer surface, and most of the heat is irradiated to areas other than the wafer, resulting in high heat loss, low wafer heating efficiency, and poor heating uniformity. [Overview of the Initiative] [Problems that the invention aims to solve]

[0005] This application aims to solve at least one of the technical problems in the prior art by providing a process chamber, semiconductor process equipment, and thin film deposition method that can improve heating efficiency and heating uniformity for wafers. [Means for solving the problem]

[0006] To achieve the objectives of the present invention, a process chamber is provided that includes a reaction chamber on which a base for placing a wafer is installed, a heating chamber communicating with the reaction chamber and having a heat radiation device at its top that radiates heat inward, and a transport device installed inside the reaction chamber that can place a wafer on it and transport the wafer between the reaction chamber and the heating chamber.

[0007] In some embodiments, a shielding plate is further housed within the heating chamber, and the transport device can further place the shielding plate on it and transport the shielding plate between the reaction chamber and the heating chamber.

[0008] In some embodiments, before the semiconductor process is performed on the wafer in the reaction chamber, the transport device transports the shielding plate housed in the heating chamber above the base, and when the semiconductor process is started on the wafer in the reaction chamber, the transport device transports the shielding plate into the heating chamber, or after the semiconductor process on the wafer in the reaction chamber is completed, the transport device transports the wafer below the thermal radiation device to heat the wafer, and after the heating is completed, the transport device transports the wafer to the base.

[0009] In some embodiments, a reflective surface is provided on the top wall of the heating chamber to reflect the heat radiated from the heat radiation device back onto the wafer surface located inside the heating chamber.

[0010] In some embodiments, a cooling channel for transporting a cooling fluid is installed on the top wall of the heating chamber.

[0011] In some embodiments, a recess is formed in the top wall of the heating chamber, the inner surface of the recess constitutes the reflective surface, and the inner shape of the recess is set such that the reflected light converges toward the wafer surface located within the heating chamber and the light covers the entire wafer surface.

[0012] In some embodiments, the reflective surface includes a plane and an annular surface surrounding the plane, wherein the plane is parallel to the horizontal plane, and the height of the annular surface gradually decreases in the direction from the edge of the plane toward the periphery of the top wall of the heating chamber.

[0013] In some embodiments, the heat radiation device includes an annular lamp tube that is circumferentially arranged on the inside of the annular surface and located outside the edge of the plane.

[0014] In some embodiments, the heating chamber includes a chamber body having an opening at its top and a reflector mounted on the top of the chamber body, the reflector being sealed to the chamber body so as to seal the opening, and the reflector having a reflective surface exposed into the heating chamber through the opening.

[0015] In some embodiments, a first annular projection is provided at the opening at the top of the chamber body, and a second annular projection is provided on the outer edge of the reflector, superimposed on the first annular projection, and the first annular projection and the second annular projection are fixedly connected. A sealing member is further installed between the first annular projection and the second annular projection to seal the opening.

[0016] In some embodiments, the process chamber further includes a first lifting device installed within the heating chamber and on which the shielding plate is placed within the heating chamber. At least one of the first lifting device and the transporting device drives the shielding plate, which is placed on it, to move up and down, thereby enabling the transport of the shielding plate between the first lifting device and the transporting device.

[0017] In some embodiments, when the transport device transports the wafer into the heating chamber, the first lifting device drives the shielding plate, which is placed on it, to a position lower than the position of the wafer placed by the transport device within the heating chamber.

[0018] In some embodiments, the process chamber further includes a second lifting device installed within the reaction chamber for placing the wafer within the reaction chamber. At least one of the second lifting device and the base drives the wafer placed on it to move up and down, thereby enabling the transport of the wafer between the second lifting device and the base.

[0019] In some embodiments, the transport device includes a transport arm and a second drive source, the transport arm on which the shielding plate or the wafer is placed, the second drive source drives the transport arm to move between the reaction chamber and the heating chamber, the transport arm includes a vertically mounted rotating shaft and a connecting arm and a mounting section perpendicular to the rotating shaft, the lower end of the rotating shaft being connected to the second drive source, the upper end of the rotating shaft being connected to one end of the connecting arm, and the other end of the connecting arm being connected to the aforementioned mounting section, the second lifting device includes a plurality of ejector pins spaced apart along the circumferential direction of the base, the aforementioned mounting section on which the shielding plate or wafer is placed and the reaction chamber When moving into the chamber, at least a portion of the aforementioned mounting portion is movable into a space enclosed by a plurality of ejector pins from the spacing between adjacent ejector pins of the second lifting device so that the shielding plate or wafer is positioned above the base, or the first lifting device includes a plurality of ejector pins spaced apart along the circumferential direction of the base, and when the aforementioned mounting portion moves into the heating chamber with the shielding plate or wafer on it, at least a portion of the aforementioned mounting portion is movable into a space enclosed by a plurality of ejector pins from the spacing between adjacent ejector pins of the first lifting device so that the shielding plate or wafer is positioned below the heat radiation device.

[0020] As an alternative technical means, the present invention further provides semiconductor process equipment including the process chamber described above.

[0021] In some embodiments, the semiconductor process equipment includes physical vapor deposition equipment.

[0022] As another technical means, the present application further provides a thin film deposition method including: after a semiconductor process on a wafer in a reaction chamber is completed, lowering a shielding plate in a heating chamber communicating with the reaction chamber to a first placement position in the heating chamber; transporting the wafer to a second placement position in the heating chamber that is higher than the first placement position; and performing a heat treatment on the wafer by radiating heat from the top of the heating chamber to the wafer.

Advantages of the Invention

[0023] The present application has the following beneficial effects.

[0024] In the technical means of the process chamber, semiconductor process equipment and thin film deposition method according to the present application, before performing a heat treatment process such as a metal reflow process, the wafer is placed using a transfer device to transfer the wafer from the reaction chamber into the heating chamber. When performing the heat treatment process, heat is radiated from a heat radiation device installed at the top of the heating chamber towards the wafer inside the heating chamber, thereby realizing heating of the wafer and completing the heat treatment process. In this technical means, when heating the wafer in the heating chamber, the volume of the heating chamber can be set smaller than that of the reaction chamber, so that the heat distribution can be made more concentrated and the heat loss can be made smaller. Thereby, the heating rate of the wafer can be improved. In addition, by installing the heat radiation device at the top of the heating chamber, the upper surface of the wafer can be directly heated, thereby further improving the heating rate of the wafer. Also, since the reaction chamber communicates with the heating chamber, a semiconductor process (such as deposition, etching, etc.) and a heat treatment process can be completed in one process chamber, thereby improving the manufacturing efficiency of the semiconductor.

Brief Description of the Drawings

[0025] [Figure 1] It is a cross-sectional view of a physical vapor deposition apparatus according to an embodiment of the present application. [Figure 2]It is a partially enlarged view of a heating chamber according to an embodiment of the present application. [Figure 3] It is a structural view of a transfer arm of a transfer device according to an embodiment of the present application. [Figure 4] It is a structural view when the transfer arm of the transfer device according to an embodiment of the present application places a wafer. [Figure 5] It is a flowchart of a thin film deposition method according to an embodiment of the present application.

Mode for Carrying Out the Invention

[0026] For those skilled in the art to better understand the technical means of the present application, the process chamber, semiconductor process equipment, and thin film deposition method according to the present application will be described in detail below with reference to the drawings.

[0027] In the related art, the process chamber includes a chamber body, a shielding disk bank communicating with the inside of the chamber body, a shielding disk, and a transfer mechanism. In the chamber body, a base and an ejector pin mechanism are installed. The base places the workpiece to be processed during the thin film deposition process, and the ejector pin mechanism is for transferring the wafer between the base by lifting and lowering. The transfer mechanism transfers the shielding disk in the shielding disk bank above the base or the wafer when using a new target or preheating the chamber to avoid contaminating the base or the wafer. In the related art, a heating component is installed on the transfer arm of the transfer mechanism. Taking the copper reflow process as an example, after the copper seed layer deposition process of the wafer is completed, the ejector pin mechanism lifts the wafer to the reflow process position, rotates the transfer arm below the wafer to heat the back surface of the wafer to achieve copper reflow. After the reflow process is completed, the transfer arm is driven by a driving device to rotate into the shielding disk bank.

[0028] However, the above reflow process involves heating the back surface of the wafer using a heating component on a transport arm. Due to the position of the ejector pin mechanism supporting the wafer, the area of ​​the transport arm's tray is limited, and the heating component cannot cover the entire back surface of the wafer. Furthermore, this heating method makes it difficult to concentrate the radiated heat onto the wafer surface, resulting in high heat loss and low wafer heating efficiency.

[0029] To solve the above technical problems, as shown in Figures 1 and 2, the process chamber according to the embodiment of the present application includes a reaction chamber 1, a heating chamber 2, and a transfer device 4. The reaction chamber 1 is equipped with a base 3 on which a wafer 9 is placed. The base 3 is, for example, an electrostatic chuck. In some embodiments, the base 3 is electrically connected to a radio frequency power supply to form a radio frequency bias on the surface of the wafer 9. A target 7 is placed inside the reaction chamber 1 and above the base 3. The target 7 is electrically connected to an excitation power supply to excite the process gas (e.g., argon gas) inside the reaction chamber 1 to form a plasma. The plasma strikes the target 7, and the target material emitted from the target 7 moves toward the surface of the wafer 9 due to the action of the radio frequency bias, depositing on the surface of the wafer 9 to form a thin film. In some embodiments, a magnetron 8 is also installed above the target 7. The above reaction chamber 1 can be used for the deposition of thin films of copper (Cu), ruthenium (Ru), cobalt (Co), molybdenum (Mo), tungsten (W), rhodium (Rh), titanium (Ti), tantalum (Ta), aluminum (Al), and the like.

[0030] The heating chamber 2 is in communication with the reaction chamber 1. Accordingly, a heat radiation device 11 is installed at the top of the heating chamber 2 to radiate heat inward into the heating chamber 2. The transport device 4 can place a wafer 9 on it and transport the wafer 9 between the reaction chamber 1 and the heating chamber 2. In this way, before performing a heat treatment process such as a metal reflow process, the wafer 9 is placed using the transport device 4 to transport the wafer 9 from the reaction chamber 1 to the heating chamber 2. When performing the heat treatment process, the heat radiation device 11 installed at the top of the heating chamber 2 is used to radiate heat towards the wafer 9 inside the heating chamber 2, thereby heating the wafer 9 and completing the heat treatment process. In this technology, when heating a wafer 9 in the heating chamber 2, the volume of the heating chamber 2 can be set to be smaller than that of the reaction chamber 1, thereby concentrating the heat distribution and reducing heat loss. This improves the heating rate of the wafer 9. Furthermore, by installing the heat radiation device 11 at the top of the heating chamber 2, the upper surface of the wafer 9 can be directly heated. Additionally, by setting the area of ​​the heat radiation device 11 to be larger than the area of ​​the wafer 9, the entire surface of the wafer 9 can be heated uniformly. The heating chamber in this embodiment can be applied to heat treatment processes such as reflow, and since the reaction chamber is in communication with the heating chamber, the semiconductor process (e.g., deposition, etching, etc.) and the heat treatment process can be completed within a single process chamber, thereby improving the manufacturing efficiency of semiconductors.

[0031] In some embodiments, in order to simplify the structure of the equipment, reduce the space occupied by the equipment, and lower the cost of the equipment, the shielding plate 10 is housed within the heating chamber 2, that is, the heating chamber 2 not only performs the heat treatment process but also houses the shielding plate 10.

[0032] Typically, a process chamber is equipped with a shielding plate 10 and a shielding plate bank that houses the shielding plate 10. When performing a process with a new target, or when performing a process again after opening the chamber for maintenance, it is usually necessary to preheat the chamber and shock off any contaminants on the target surface before performing the semiconductor process normally, in order to prevent metals that could contaminate the target surface from accumulating on the wafer surface. At this time, the shielding plate 10 is used to shield the top of the base 3, and when performing the semiconductor process normally, the shielding plate 10 needs to be moved into the shielding plate bank that communicates with the reaction chamber 1. In such cases, in some embodiments, the shielding plate bank is used as the heating chamber 2, that is, the existing shielding plate bank can be improved compared to the case of a process chamber equipped with a shielding plate bank. By adding a heat radiation device 11, the shielding plate bank can be used not only for the heat treatment process but also to house the shielding plate 10. This eliminates the need to occupy the internal space of the reaction chamber 1, eliminates the need to significantly modify the structure of the reaction chamber 1, further reduces design difficulty, and saves on equipment costs. Furthermore, since the volume of the shielding plate bank is smaller than that of the reaction chamber 1, the heat distribution can be more concentrated and heat loss can be reduced, thereby improving the heating rate of the wafer 9.

[0033] In addition to being used for the heat treatment process and for housing the shielding plate 10, the transport device 4 can also place the shielding plate 10 on it and transport it between the reaction chamber 1 and the heating chamber 2. In some embodiments, before the reaction chamber 1 performs a semiconductor process (e.g., a metal thin film deposition process) on a wafer, it is usually necessary to perform a pre-treatment process such as preheating the chamber and knocking off contaminants from the target surface. In such cases, the transport device 4 can transport the shielding plate 10 housed in the heating chamber 2 above the base 3, thereby shielding the base 3 with the shielding plate 10 during the pre-treatment process and preventing contamination of the base 3. Furthermore, when the reaction chamber 1 begins performing a semiconductor process on a wafer, the shielding plate 10 is transported and housed in the heating chamber 2 to ensure the normal progress of the process. That is, before performing the semiconductor process, the shielding plate 10 is transported and housed in the heating chamber 2. Furthermore, after completing the semiconductor process on the wafer in the reaction chamber 1, the transport device 4 can transport the wafer below the heat radiation device 11 in the heating chamber 2 to heat the wafer in the heat radiation device 11, complete the heat treatment on the wafer, and after heating is finished, transport the wafer to the base 3.

[0034] In some embodiments, in order to further improve the heat utilization rate and enhance heating efficiency, a reflective surface 221 is installed on the top wall of the heating chamber 2 to reflect the heat radiated from the heat radiation device 11 back onto the surface of the wafer 9 located inside the heating chamber 2. Specifically, the reflective surface 221 is installed on the surface of the top wall of the heating chamber 2 facing inward, and in some embodiments, the reflective surface 221 is a mirror surface, such as an arc-shaped surface with a smoothness of Ra 0.1 or less.

[0035] In some embodiments, a cooling channel for transporting a cooling fluid such as cooling water is installed on the top wall of the heating chamber 2. By cooling the top wall of the heating chamber 2 during the heat treatment process, burns to people due to excessively high outer surface temperatures of the top wall of the heating chamber 2 can be avoided. For example, as shown in Figure 2, a concave channel 14 and a cover plate 15 that seals the concave channel 14 are formed on the outer surface of the top wall of the heating chamber 2. The concave channel 14 and the cover plate 15 surround each other to form the cooling channel. Furthermore, in some embodiments, by making the outer surface of the cover plate 15 and the outer surface of the top wall of the heating chamber 2 flush, the outer surface of the cover plate 15 and the outer surface of the top wall of the heating chamber 2 can both form a smooth, continuous surface. However, the embodiments of the present application are not limited thereto, and in actual applications, the concave flow channels 14 may be formed on the reflective surface 221, and the distribution method of the cooling flow channels on the reflective surface 221 or the outer surface of the top wall of the heating chamber 2 may be set according to specific requirements, for example, the cooling flow channels may be uniformly distributed on the reflective surface 221 or the outer surface of the top wall of the heating chamber 2.

[0036] In some embodiments, to improve heating efficiency, a recess 222 is formed in the top wall of the heating chamber 2. Specifically, the recess 222 is formed on the surface of the top wall of the heating chamber 2 facing inward. The inner surface of the recess 222 constitutes the reflective surface 221. The shape of the inner surface of the recess 222 is set such that the reflected light converges toward the surface of the wafer 9 located inside the heating chamber 2, and the light covers the entire surface of the wafer 9, thereby improving heating uniformity.

[0037] The shape of the inner surface of the recess 222 that realizes the above function can be diverse. For example, the reflective surface 221 includes a plane 221a and an annular surface 221b surrounding the plane 221a, where the plane 221a is parallel to the horizontal plane, and the height of the annular surface 221b gradually decreases from the edge of the plane 221a toward the peripheral edge of the top wall of the heating chamber 2. That is, the size of the opening enclosed by the annular surface 221b gradually increases from top to bottom. In this way, the annular surface 221b can reflect light irradiated onto it and focus it toward the entire surface of the wafer 9. In some embodiments, the outer diameter of the annular surface 221b is greater than or equal to the diameter of the wafer 9.

[0038] The annular surface 221b may also be an annular tapered surface. In this case, by setting the inclination angle of the annular tapered surface with respect to the horizontal plane, light irradiated onto it will be reflected and focused toward the entire surface of the wafer 9, and the light will cover the entire surface of the wafer 9. Alternatively, the annular surface 221b may also be an annular arc surface. In this case, by setting the inclination angle of the annular arc surface with respect to the horizontal plane and the arc of the annular arc surface, light irradiated onto it will be reflected and focused toward the entire surface of the wafer 9, and the light will cover the entire surface of the wafer 9. For example, the annular arc surface may be part of a sphere.

[0039] In some embodiments, using the reflective surface 221, the heat radiation device 11 includes an annular lamp tube that is circumferentially arranged inside the annular surface 221b and located outside the edge of the plane 221a. That is, the inner diameter of the annular lamp tube is larger than the diameter of the edge of the plane 221a and smaller than the outer diameter of the annular surface 221b. Since the annular lamp tube is circumferentially arranged above the wafer 9, it is possible to increase the heat irradiated onto the surface of the wafer 9, improving not only heating efficiency but also heating uniformity. Furthermore, because the annular lamp tube is circumferentially arranged inside the annular surface 221b and located outside the edge of the plane 221a, the light emitted by the annular lamp tube is irradiated more by the annular surface 221b, and the light irradiated onto it by the annular surface 221b is reflected and focused toward the entire surface of the wafer 9, and the light covers the entire surface of the wafer 9. Those skilled in the art will know that, depending on the actual situation, by rationally setting the diameter of the annular lamp tube and the distance between the annular lamp tube and the wafer 9, the light can cover the entire surface of the wafer 9, thereby improving temperature uniformity.

[0040] In some embodiments, the annular lamp tube may be fixed to the top wall of the heating chamber 2 by a fixing member such as a fastening member. Alternatively, power can be supplied to the annular lamp tube by installing a lead wire passage on the top wall of the heating chamber 2 that allows the wiring of the annular lamp tube to be routed from the reflective surface 221 to the outside of the heating chamber 2 and electrically connected to an external power source. In this embodiment, there is one annular lamp tube, but the embodiments of this application are not limited to this, and in actual applications, there may be multiple annular lamp tubes, which may be installed concentrically and distributed at different circumferences. Of course, the heat radiation device 11 may also use heating lamps of other shapes, such as spiral lamp tubes, rod-shaped lamp tubes, or light bulbs.

[0041] In some embodiments, to facilitate the installation of the heat radiation device 11, the heating chamber 2 includes a chamber body 21 having an opening at its top and a reflector 22 mounted on the top of the chamber body 21, the reflector 22 being sealed to the chamber body 21 to seal the opening, and the reflector 22 having the reflective surface 221 exposed into the heating chamber 2 through the opening. The heat radiation device 11 may be fixedly connected to the reflector 22. Furthermore, in some embodiments, in order to achieve sealing between the reflector 22 and the heating chamber 2 and to ensure airtightness inside the heating chamber 2 and the reaction chamber 1, a first annular projection 211 is installed at the opening at the top of the chamber body 21, and a second annular projection 223 is installed on the outer peripheral edge of the reflector 22, overlapping the first annular projection 211. The first annular projection 211 and the second annular projection 223 are fixedly connected, for example by screws, and a sealing member 12 that seals the opening is further installed between the first annular projection 211 and the second annular projection 223. In this way, the first annular projection 211 supports the reflector 22 and the sealing member 12 can be attached to it. Also, in some embodiments, by installing a positioning structure between the first annular projection 211 and the second annular projection 223, the positioning of both can be achieved, thereby facilitating the installation of the reflector 22. The positioning structure is, for example, at least one positioning pin 13.

[0042] In some embodiments, in addition to the heating chamber 2 being used not only for the heat treatment process but also for housing the shielding plate 10, the process chamber further includes a first lifting device 5 installed in the heating chamber 2 (e.g., a shielding plate bank), the first lifting device 5 may be, for example, an ejector pin mechanism, and the shielding plate 10 is placed in the heating chamber 2, and at least one of the first lifting device 5 and the conveying device 4 is driven to lift and lower the shielding plate 10 placed thereon, thereby enabling the conveyance of the shielding plate 10 between the first lifting device 5 and the conveying device 4. Furthermore, in some embodiments, when the transport device 4 transports a wafer to the heating chamber 2, the first lifting device 5 is driven to lower the shielding plate 10, which is placed on it, to a position lower than the position of the wafer placed on the transport device 4 inside the heating chamber 2 (i.e., a position lower than the position of the wafer when the transport device 4 transports the wafer into the heating chamber 2 and performs the heat treatment process). This positions the shielding plate 10 above the shielding plate 10 and the heat radiating device 11 below the wafer when the wafer is transported into the heating chamber 2, preventing the shielding plate 10 from obstructing the transport of the wafer into the heating chamber 2. At this time, heat can be radiated from the top of the heating chamber 2 to the wafer using the heat radiating device 11, thereby achieving heat treatment for the wafer.

[0043] In some embodiments, the heating chamber 2 is used not only for the heat treatment process but also for housing the shielding plate 10. In addition, the process chamber may further include a second lifting device 6 installed within the reaction chamber 1, the second lifting device 6 may be, for example, an ejector pin mechanism, and a wafer 9 can be placed in the reaction chamber 1. The transport of the wafer 9 between the second lifting device 6 and the base 3 can be achieved by driving at least one of the second lifting device 6 and the base 3 to lift or lower the wafer 9 placed thereon.

[0044] At least one of the first lifting device 5 and the second lifting device 6 may include at least three ejector pins spaced apart in the circumferential direction. For example, the first lifting device 5 shown in Figure 2 has at least three first ejector pins 51, although Figure 2 schematically shows only two first ejector pins 51. The tips of the at least three first ejector pins 51 together constitute a mounting surface on which the shielding plate 10 or wafer 9 is placed, and the center of the circumference where the at least three first ejector pins 51 are located is aligned, for example, with the center of the wafer placed on the transport device 4 inside the heating chamber 2. The first lifting device 5 and / or the second lifting device 6 described above are movable up and down. Taking the first lifting device 5 as an example, the first lifting device 5 further includes a lifting mechanism connected to at least three first ejector pins 51, for example, the lifting mechanism 52 of the first lifting device 5 shown in Figure 2, and by driving the lifting mechanism 52, at least three first ejector pins 51 can be raised or lowered in synchronous motion. For the second lifting device 6, at least three second ejector pins 61 (Figure 2 schematically shows only two second ejector pins 61) can be raised and lowered, for example, by penetrating the base 3, and at least three second ejector pins 61 are installed spaced apart along the circumferential direction of the base 3.

[0045] As an example, assuming that the first lifting device 5 is movable, the second lifting device 6 is movable, and the base 3 is movable, before performing the semiconductor process, the shielding plate 10 is positioned inside the heating chamber 2, placed on the first lifting device 5 (i.e., at least three first ejector pins 51), and positioned in the first placement position (i.e., the position where the shielding plate 10 is located in Figures 1 and 2), at which time the base 3 is in the wafer transport position (i.e., the position where the base 3 is located in Figures 1 and 2), and at the wafer transport position, the second lifting device 6 is movable The mounting surface of the lowering device 6 (i.e., together with the tips of at least three second ejector pins 61) is higher than the base 3. After the wafer 9 is transported into the reaction chamber 1 by a manipulator or other wafer transport device and placed on the mounting surface of the second lifting device 6, the base 3 is raised to the process position (higher than the position where the mounting surface of the second lifting device 6 is located in Figures 1 and 2). During the raising process of the base 3, the base 3 lifts the wafer 9, detaching it from the second lifting device 6 and raising it together with the base 3. When the base 3 is in the process position, the semiconductor process can be performed. After the semiconductor process is completed, the base 3 descends to the wafer transport position. During the descending process of the base 3, the second lifting device 6 supports the wafer 9, detaching it from the base 3, and lowers the base 3 to the wafer transport position on its own. At the wafer transport position, the transport device 4 can move its mounting surface below the wafer 9 and position it above the base 3. At this time, the second lifting device 6 is lowered until the wafer 9 descends onto the mounting surface of the transport device 4, thereby enabling the wafer 9 to be transported from the second lifting device 6 to the transport device 4.

[0046] When a heat treatment process such as reflow is required, the transport device 4 transports the wafer 9 to a second mounting position in the heating chamber 2 that is higher than the first mounting position where the shielding plate 10 is located (i.e., the position where the wafer 9 is located in Figure 2). At this time, the wafer 9 is positioned above the shielding plate 10 and below the heat radiation device 11, and the heat treatment process can be carried out by radiating heat onto the wafer 9 using the heat radiation device 11. After the heat treatment process is completed, the transport device 4 transports the wafer 9 into the reaction chamber 1, and the second lifting device 6 is raised. During this raising process, the second lifting device 6 lifts the wafer 9 and separates it from the transport device 4, thereby transporting the wafer 9 from the transport device 4 to the second lifting device 6. At this time, the next semiconductor process can be carried out on the wafer 9 that has completed the heat treatment process.

[0047] When it is necessary to strike a new target or preheat the chamber, the first lifting device 5 on which the shielding plate 10 is placed is raised, and then the transport device 4 moves its mounting surface below the shielding plate 10 in the shielding plate bank 2, and then the first lifting device 5 is lowered until the shielding plate 10 is lowered to the mounting surface of the transport device 4, thereby enabling the shielding plate 10 to be transported from the first lifting device 5 to the transport device 4. Subsequently, the transport device 4 is used to transport the shielding plate 10 into the reaction chamber 1 and position it above the base 3 (which is at the wafer transport position at this time), thereby shielding the base 3 and preventing contamination of the base 3.

[0048] In actual application, it is not necessary to install the first lifting device 5, and the transport device 4 may rotate independently inside the reaction chamber 1 without carrying the shielding plate 10 using another method. For example, the chamber can be opened and the shielding plate 10 removed.

[0049] In some embodiments, as shown in Figures 1, 3, and 4, the transport device 4 includes a transport arm and a second drive source 43, the transport arm on which a shielding plate 10 or wafer 9 is placed, and the second drive source 43 drives the transport arm to move between the reaction chamber 1 and the heating chamber 2. For example, the transport arm includes, for example, a vertically mounted rotating shaft 42, a connecting arm 41 perpendicular to the rotating shaft 42, and a mounting section 44, the mounting section 44 having a mounting surface on which a wafer or shielding plate is placed. The lower end of the rotating shaft 42 is connected to the second drive source 43, which may be a motor, air cylinder, or hydraulic cylinder capable of driving the rotating shaft 42 to rotate along its axis and providing rotational power. In some embodiments, the second drive source 43 is located outside the reaction chamber 1, in which case the lower end of the rotating shaft 42 extends from the bottom of the reaction chamber 1 to the outside of the chamber and is connected to the second drive source 43.

[0050] The upper end of the rotating shaft 42 is connected to one end of the connecting arm 41, and the other end of the connecting arm 41 is connected to the mounting section 44. Driven by the second drive source 43, the connecting arm 41 and the mounting section 44 rotate around the rotating shaft 42 in synchronous motion with the rotating shaft 42, thereby rotating the mounting section 44 into the reaction chamber 1 or the heating chamber 2. If the conveying device 4 is capable of moving up and down, a lifting drive source may be added to drive the lifting and lowering of the conveying arm in addition to the conveying arm and the second drive source 43. In some embodiments, the lifting drive source may be connected to the second drive source 43 and driven to move the entire second drive source 43 and the conveying arm up and down, or it may be connected to the conveying arm and driven to move only the conveying arm up and down. In such cases, the second drive source 43 is connected to the lifting drive source and driven to rotate the entire lifting drive source and the conveying arm.

[0051] The above-described mounting section 44 is used to mount the shielding plate 10 or a wafer. In some embodiments, the contour shape of the above-described mounting section 44 when orthographically projected onto a horizontal plane is set so that it does not collide with the first lifting device 5 when the mounting section 44 moves into the heating chamber 2, and does not collide with the second lifting device 6 when the mounting section 44 moves into the reaction chamber 1.

[0052] If the second lifting device 6 includes a plurality of second ejector pins 61 installed at intervals in the circumferential direction, as shown in Figure 3, when the mounting section 44 moves into the reaction chamber 1 with the shielding plate 10 or wafer on it, at least a portion of the mounting section 44 can move from the spacing 611 between adjacent second ejector pins 61 of the second lifting device 6 into the space surrounded by the plurality of second ejector pins 61 so that the shielding plate 10 or wafer is positioned above the base 3. If the first lifting device 5 includes a plurality of first ejector pins 51 installed at intervals in the circumferential direction, when the mounting section 44 moves into the heating chamber 2 with the shielding plate 10 or wafer on it, at least a portion of the mounting section 44 can move from the spacing 611 between adjacent first ejector pins 51 of the first lifting device 5 into the space surrounded by the plurality of first ejector pins 51 so that the shielding plate 10 or wafer is positioned below the heat radiation device 11. Specifically, when the mounting section 44 places a wafer and moves into the heating chamber 2, at least a portion of the mounting section 44 can move from the spacing between adjacent first ejector pins 51 into the space enclosed by the multiple first ejector pins 51, at which point the wafer 9 is positioned above the shielding plate 10 and below the heat radiation device 11. The shape of the contour of the mounting section 44 that can achieve the above function is shown in Figure 3. Of course, the structure of the mounting section 44 shown in Figure 3 is merely illustrative, and in actual applications, the transport arm may use any other contour shape as long as it does not collide with the first lifting device 5 and the second lifting device 6.

[0053] As another technical means, embodiments of the present application further provide semiconductor process equipment including the process chamber according to embodiments of the present application.

[0054] The semiconductor process equipment according to the embodiment of the present invention can improve heating efficiency and heating uniformity for wafers by using the process chamber according to the embodiment of the present invention.

[0055] In some embodiments, the semiconductor process equipment according to the embodiments of the present application includes a physical vapor deposition (VAP) apparatus. In the process chamber of the VAP apparatus, the reaction chamber 1 may be used to perform a thin film deposition process (e.g., a metal thin film) on a wafer, and the heating chamber 2 may be used to perform a heat treatment process on the thin film deposited on the wafer, for example, to perform a reflow process on a metal thin film.

[0056] As an alternative technical means, as shown in Figures 1, 2, and 5, the embodiment of the present invention further provides a thin film deposition method comprising: step S1 of lowering a shielding plate 10 in a heating chamber 2 communicating with the reaction chamber 1 to a first mounting position in the heating chamber 2 (i.e., the position where the shielding plate 10 is located in Figures 1 and 2) after a semiconductor process on a wafer 9 in a reaction chamber 1 is completed; step S2 of transporting the wafer 9 to a second mounting position in the heating chamber 2 that is higher than the first mounting position (i.e., the position where the wafer 9 is located in Figure 2); and step S3 of radiating heat from the top of the heating chamber 2 onto the wafer 9 to perform heat treatment on the wafer 9.

[0057] In the thin-film deposition method according to the embodiment of the present invention, the heating chamber 2 is used not only for the heat treatment process but also to house the shielding plate 10, thereby simplifying the structure of the equipment, reducing the space occupied by the equipment, and lowering the equipment cost. Furthermore, before performing a heat treatment process such as a metal reflow process, the wafer is transported from the reaction chamber 1 to the heating chamber 2, and when the heat treatment process is performed, heating of the wafer is achieved by radiating heat from the top of the heating chamber 2 to the wafer 9, thereby completing the heat treatment process. In this technical means, when heating the wafer in the heating chamber 2, the volume of the heating chamber 2 can be set to be smaller than that of the reaction chamber 1, so that the heat distribution can be more concentrated and heat loss can be reduced, thereby improving the rate of heating of the wafer. In addition, by radiating heat from the top of the heating chamber 2 to the wafer 9, the upper surface of the wafer 9 can be directly heated, thereby further improving the rate of heating of the wafer.

[0058] Specifically, taking as an example the process chamber shown in Figure 1, where the first lifting device 5 is movable, the second lifting device 6 is movable, and the base 3 is movable, before performing the semiconductor process, first, the shielding plate 10 is positioned inside the heating chamber 2 and placed on it by the transport device 4. At this time, the base 3 is in the wafer transport position, and at this wafer transport position, the mounting surface of the second lifting device 6 (i.e., the mounting surface composed of the tips of at least three second ejector pins 61) is higher than the base 3. Next, the wafer 9 is transported into the reaction chamber 1 by a manipulator or other wafer transport device and placed on the mounting surface of the second lifting device 6. After that, the base 3 is raised to the process position. During the raising process of the base 3, the base 3 lifts the wafer 9, detaching the wafer 9 from the second lifting device 6, and the base 3 is raised together with the wafer until it reaches the process position. At this time, the reaction chamber 1 can perform the semiconductor process.

[0059] After the semiconductor process is completed, the base 3 descends from the process position to the wafer transport position. During the descent of the base 3, the second lifting device 6 supports the wafer 9 and separates the wafer 9 from the base 3, allowing the base 3 to descend to the wafer transport position independently. Next, step S1 is performed, that is, the shielding plate 10 in the heating chamber 2 is lowered to the first placement position in the heating chamber 2 (i.e., the position where the shielding plate 10 is located in Figures 1 and 2). Specifically, the process involves, for example, raising the first lifting device 5, and during the raising process, the first lifting device 5 lifts the shielding plate 10 and detaches it from the transport device 4, thereby transporting the shielding plate 10 from the transport device 4 to the first lifting device 5. Subsequently, the transport device 4 moves its placement surface below the wafer 9 (which is now placed on the second lifting device 6), lowering the first lifting device 5 until the shielding plate 10 has descended to the first placement position in the heating chamber 2, and lowering the second lifting device 6 until the wafer 9 has descended to the placement surface of the transport device 4, thereby transporting the wafer 9 from the second lifting device 6 to the transport device 4. Then, step S2 is initiated, that is, the transport device 4 transports the wafer 9 to a second placement position in the heating chamber 2 that is higher than the first placement position where the shielding plate 10 is located. At this time, the wafer 9 is positioned above the shielding plate 10 and below the heat radiation device 11, and the heating chamber 2 can perform step S3, that is, carry out the heat treatment process.

[0060] After the heat treatment process is completed, the wafer 9 is transported into the reaction chamber 1 by the transport device 4, and the second lifting device 6 is raised. During this raising process, the second lifting device 6 lifts the wafer 9 and separates it from the transport device 4, thereby transporting the wafer 9 from the transport device 4 to the second lifting device 6. At this time, the next semiconductor process can be performed on the wafer 9 that has completed the heat treatment process.

[0061] Based on the above, in the process chamber, semiconductor process equipment, and thin film deposition method according to the embodiment of the present application, before performing a heat treatment process such as a metal reflow process, the wafer is transported from the reaction chamber to the heating chamber by placing the wafer on a transport device, and when performing the heat treatment process, the wafer is heated and the heat treatment process can be completed by radiating heat towards the wafer inside the heating chamber using a heat radiation device installed at the top of the heating chamber. In this technology, when heating the wafer in the heating chamber, the volume of the heating chamber can be set to be smaller than that of the reaction chamber, so the heat distribution can be more concentrated and heat loss can be reduced, thereby improving the wafer heating rate. Furthermore, by installing the heat radiation device at the top of the heating chamber, the upper surface of the wafer can be heated directly, thereby further improving the wafer heating rate.

[0062] To ensure that it is understood that the embodiments described above are merely exemplary embodiments used to illustrate the principles of the present application, but the present application is not limited thereto. Furthermore, a person skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present application, and such modifications and improvements will also be deemed to fall within the scope of the protection of the present application.

Claims

1. A reaction chamber on which a base for placing wafers is installed, A heating chamber is connected to the reaction chamber, and a heat radiation device is installed at its top that radiates heat inward, A process chamber characterized by including a transport device installed in the reaction chamber, capable of holding a wafer and transporting the wafer between the reaction chamber and the heating chamber.

2. The process chamber according to claim 1, wherein a shielding plate is further housed in the heating chamber, and the transport device further places the shielding plate on it and is capable of transporting the shielding plate between the reaction chamber and the heating chamber.

3. Before the semiconductor process is performed on the wafer in the reaction chamber, the transport device transports the shielding plate housed in the heating chamber to the base, and when the semiconductor process is started on the wafer in the reaction chamber, the transport device transports the shielding plate to the heating chamber, or The process chamber according to claim 2, wherein, after the semiconductor process on the wafer in the reaction chamber is completed, the transfer device transfers the wafer to the heat radiation device to heat the wafer in the heat radiation device, and after the heating is completed, the transfer device transfers the wafer to the base.

4. The process chamber according to any one of claims 1 to 3, characterized in that a reflective surface is installed on the top wall of the heating chamber to reflect the heat radiated from the heat radiation device to the wafer surface located inside the heating chamber.

5. The process chamber according to claim 4, characterized in that a cooling channel for transporting a cooling fluid is installed on the top wall of the heating chamber.

6. The process chamber according to claim 4, characterized in that a recess is formed in the top wall of the heating chamber, the inner surface of the recess constitutes the reflective surface, and the inner surface shape of the recess is set such that the reflected light converges toward the wafer surface located within the heating chamber and the light covers the entire wafer surface.

7. The process chamber according to claim 6, wherein the reflective surface includes a plane and an annular surface surrounding the plane, the plane is parallel to a horizontal plane, and the height of the annular surface gradually decreases in the direction approaching the peripheral edge of the top wall of the heating chamber from the edge of the plane.

8. The process chamber according to claim 7, characterized in that the heat radiation device includes an annular lamp tube that is circumferentially arranged on the inside of the annular surface and located outside the edge of the plane.

9. The process chamber according to claim 4, wherein the heating chamber includes a chamber body having an opening at its top and a reflector plate installed at the top of the chamber body, the reflector plate being sealed to the chamber body so as to seal the opening, and the reflector plate having a reflective surface exposed into the heating chamber through the opening.

10. A first annular projection is installed in the opening at the top of the chamber body, and a second annular projection is installed on the outer edge of the reflector, superimposed on the first annular projection, and the first annular projection and the second annular projection are fixedly connected. The process chamber according to claim 9, further comprising a sealing member for sealing the opening, provided between the first annular projection and the second annular projection.

11. The system further includes a first lifting device installed within the heating chamber, on which the shielding plate is placed within the heating chamber, The process chamber according to claim 2, characterized in that at least one of the first lifting device and the conveying device drives the shielding plate, which is placed thereon, to move up and down, thereby enabling the conveying of the shielding plate between the first lifting device and the conveying device.

12. The process chamber according to claim 11, characterized in that when the transport device transports the wafer into the heating chamber, the first lifting device drives the shielding plate, which is placed on it, to a position lower than the position of the wafer placed by the transport device within the heating chamber.

13. The system further includes a second lifting device installed within the reaction chamber for placing the wafer within the reaction chamber, The process chamber according to claim 11, characterized in that at least one of the second lifting device and the base drives the wafer placed thereon to move up and down, thereby enabling the transport of the wafer between the second lifting device and the base.

14. The transport device includes a transport arm and a second drive source, the transport arm on which the shielding plate or the wafer is placed, and the second drive source drives the transport arm to move between the reaction chamber and the heating chamber. The transport arm includes a vertically installed rotating shaft, a connecting arm and a mounting section perpendicular to the rotating shaft, the lower end of the rotating shaft being connected to the second drive source, the upper end of the rotating shaft being connected to one end of the connecting arm, and the other end of the connecting arm being connected to the mounting section described above. The second lifting device includes a plurality of ejector pins spaced apart along the circumferential direction of the base, and when the aforementioned mounting portion moves into the reaction chamber with the shielding plate or wafer on it, at least a portion of the aforementioned mounting portion is movable from the spacing between adjacent ejector pins of the second lifting device into the space surrounded by the plurality of ejector pins, or, The process chamber according to claim 13, wherein the first lifting device includes a plurality of ejector pins spaced apart along the circumferential direction of the base, and when the mounting portion moves into the heating chamber with the shielding plate or wafer on it, at least a portion of the mounting portion is movable from the spacing between adjacent ejector pins of the first lifting device into a space surrounded by the plurality of ejector pins, such that the shielding plate or wafer is positioned below the heat radiation device.

15. A semiconductor process apparatus characterized by including a process chamber according to any one of claims 1 to 14.

16. The semiconductor process equipment according to claim 15, characterized in that it includes a physical vapor phase growth apparatus.

17. After the semiconductor process on the wafer in the reaction chamber is completed, the shielding plate in the heating chamber communicating with the reaction chamber is lowered to a first mounting position in the heating chamber, The steps include transporting the wafer to a second mounting position in the heating chamber that is higher than the first mounting position, A thin film deposition method characterized by comprising the step of radiating heat onto the wafer from the top of the heating chamber to perform heat treatment on the wafer.

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