Electrodes for spectrometers

Abstract

This disclosure relates to electrodes for spectrometers, and more particularly to electrodes for ion gates and / or ion modifiers for spectrometers such as ion mobility spectrometers. Aspects of this disclosure provide an electrode that provides a Tyndall-Powell gate structure, the electrode comprising a conductive structure having a hexagonal grid and a frame surrounding the hexagonal grid, wherein the hexagonal grid is planar and the frame is configured to provide additional support to the hexagonal grid.

Description

Technical Field

[0001] The present disclosure relates to electrodes for spectrometers, particularly electrodes for ion gates and / or ion modifiers for spectrometers such as ion mobility spectrometers.

Background Art

[0002] Ion mobility spectrometers (IMS) are used to determine substances in a sample. The sample is vaporized, ionized (e.g., by an ionization source), and then selectively introduced into a drift chamber by an ion gate. The ions introduced into the drift chamber are moved by drift electrodes relative to a drift gas of known characteristics until the ions reach a detector at the end of the drift chamber. The flight time (TOF) of the ions (i.e., the time required for the ions to move from the ion gate to the detector) indicates the mobility of the same ions. Since ions having different characteristics (e.g., mass and shape) have different mobilities in the drift tube, the determination of ions in the sample can be made based on the same mobility.

[0003] The Tyndall-Powell ion gate is a particular type of ion gate typically used in IMS that is chosen to relatively easily construct the ion gate. However, typically, the Tyndall-Powell ion gate often sacrifices ion transmission (i.e., the relative proportion of ions that can pass through the gate) compared to other gate designs. Therefore, an IMS having a Tyndall-Powell ion gate often sacrifices sensitivity due to relatively insufficient transmission of ions through the same ion gate.

[0004] The Bradbury-Neilson ion gate is an alternative to the Tyndall-Powell ion gate. The Bradbury-Nielson ion gate has two electrodes spaced apart in the direction of ion movement through the gate (for example, a spacer may be placed between the two electrodes). In the example, the two electrodes may be in approximately the same position along the direction of ion movement (for example, the two electrodes may be aligned in the direction of ion movement). The Bradbury-Nielson ion gate has two main disadvantages that are not present in the Tyndall-Powell ion gate.

[0005] The first drawback is that Bradbury-Nielson ion gates typically have open areas (e.g., areas of the gate through which ions can pass) that provide reduced ion permeability compared to equivalent Tyndall-Powell ion gates, which can relatively reduce the sensitivity of the IMS detector.

[0006] The second drawback is that when a Bradbury-Nielson ion gate is closed, the electric field lines around the gate create a region called a "depletion region," where no ions can be formed. Then, when the Bradbury-Nielson ion gate is subsequently opened, the ions must traverse the depletion region before they can pass through the gate. This effectively widens the gate's "cut width," reducing the number of ions that can pass through the gate during the short period it is open. [Overview of the project]

[0007] Aspects of the present invention are described in the independent claims, and optional features are described in the dependent claims. Aspects of the present invention may be provided in relation to one another, and features of one aspect may be applied to other aspects.

[0008] One embodiment provides an electrode that provides a Tyndall-Powell gate structure, the electrode comprising a conductive structure having a hexagonal grid and a frame surrounding the hexagonal grid, wherein the hexagonal grid is planar and the frame is configured to provide additional support to the hexagonal grid.

[0009] The frame may be configured to provide additional support to the hexagonal grid, which may advantageously allow for the provision of a hexagonal grid with a larger open area (which may require additional support from the frame) compared to a hexagonal grid with a relatively smaller open area (which may not require additional support from the frame). Thus, a hexagonal grid with a relatively large open area (e.g., a larger ratio of open area to closed area of ​​the grid) may be provided, which may improve ion permeability through the electrodes (e.g., through the open area). For example, a hexagonal grid with a larger open area may not be self-supporting (e.g., the hexagonal grid may not be able to maintain its planar shape without the additional support provided by the frame).

[0010] The frame may have a thickness perpendicular to the hexagonal grid that is greater than the thickness of the hexagonal grid.

[0011] Therefore, the frame may have relatively higher rigidity than, for example, the hexagonal grid, which may advantageously allow the frame to provide additional support to the hexagonal grid.

[0012] The Tyndall-Powell ion gate does not have to have the drawbacks of the Bradbury-Nielson ion gate. The field lines around the electrode may remain substantially parallel, for example, and as a result the ion paths remain parallel, the Tyndall-Powell ion gate may not have a significant depletion region. When the Tyndall-Powell ion gate is open, ions may be very close to the gate electrode (i.e., there is no depletion region or it is very small), which may allow more ions to pass through the Tyndall-Powell ion gate in the same open period than in the case of the Bradbury-Nielson ion gate.

[0013] The frame and the hexagonal grid may be integrated. The frame and the hexagonal grid may be formed as a single element. For example, the frame and the hexagonal grid may be formed by an additive manufacturing process, such as electrodeposition.

[0014] The frame and conductive structure may substantially consist of a metal suitable for electrodeposition. For example, the metal may be any of the following metals, namely aluminum, zinc, silver, palladium, tantalum, zirconium, gadolinium, nickel, cobalt, and copper, either individually or in combination (e.g., as an alloy). Particularly preferred metals may be readily available zinc and / or nickel, and / or may be relatively cheaper (e.g., compared to silver) than at least some of the other listed metals, and / or may be relatively less susceptible to corrosion when used as electrodes in a spectrometer (e.g., compared to copper).

[0015] The conductive structure may include conductive struts that form a hexagonal grid, and the conductive struts may have a width between 0.080 mm and 0.005 mm in the direction parallel to the hexagonal grid. More preferably, the conductive struts may have a width between 0.040 mm and 0.010 mm in the direction parallel to the hexagonal grid. Even more preferably, the conductive struts may have a width of 0.020 mm.

[0016] In this example, reducing the width of the conductive struts may reduce the number of ions in the spectrometer that collide with the hexagonal grid, thereby advantageously improving the ion processing rate through the electrodes.

[0017] The conductive structure may include conductive struts that form a hexagonal grid, and the conductive struts may have a thickness between 0.080 mm and 0.005 mm in the direction perpendicular to the hexagonal grid. More preferably, the conductive struts may have a thickness between 0.030 mm and 0.010 mm in the direction perpendicular to the hexagonal grid. Even more preferably, the conductive struts may have a thickness of 0.018 mm.

[0018] In this example, reducing the thickness of the conductive struts may reduce the number of ions in the spectrometer that collide with the hexagonal lattice, thereby advantageously improving the rate at which ions pass through the electrodes.

[0019] The frame may include a plurality of frame positioning mechanisms configured to engage with each of a plurality of holder positioning mechanisms in a holder that holds electrodes.

[0020] The engagement of the frame positioning mechanism of each electrode with respect to the holder positioning mechanism may be such that the conductive structure of the first electrode is positioned parallel to the conductive structure of the second electrode.

[0021] The engagement of the frame positioning mechanism of each electrode with respect to the holder positioning mechanism may be such that the hexagonal grid of the first electrode is aligned with respect to the hexagonal grid of the second electrode in a direction perpendicular to the hexagonal grid of each electrode.

[0022] In the example, either at least one of the frame positioning mechanisms has a hole and at least one of the holder positioning mechanisms has a peg configured to fit into the hole, or at least one of the holder positioning mechanisms has a hole and at least one of the frame positioning mechanisms has a peg configured to fit into the hole. The hole may be configured to receive the peg.

[0023] A predetermined hole and peg may be configured to provide a tight fit between the hole and the peg. Alternatively, a predetermined hole and peg may be configured to provide an intermediate fit between the hole and the peg.

[0024] In the example, all of the frame positioning mechanisms may be pegs, and all of the holder positioning mechanisms may be holes (for example, the number of pegs corresponds to the number of holes), and the holes are configured to receive pegs. In the example, all of the frame positioning mechanisms may be holes, and all of the holder positioning mechanisms may be pegs (for example, the number of pegs corresponds to the number of holes), and the pegs are configured to receive holes. In the example, the frame positioning mechanism may comprise at least one peg (for example, X pegs) and at least one hole (for example, Y holes), and the holder positioning mechanism may comprise at least one peg (for example, Y pegs) and at least one hole (for example, X holes).

[0025] The frame positioning mechanism may be arranged around the frame to provide a plurality of frame positioning mechanisms, the average horizontal and / or average vertical positions of the plurality of frame positioning mechanisms being located less than a predetermined distance from the center of the hexagonal grid, the predetermined distance being based on the width of the conductive struts in a direction parallel to the hexagonal grid.

[0026] The mechanisms listed above may advantageously allow the two electrodes to be provided in an aligned arrangement. For example, the above arrangement of the electrodes to mean horizontal and / or mean vertical positions.

[0027] The frame positioning mechanism may be positioned such that when the frame positioning mechanism is disposed in the holder positioning mechanism, the conductive struts of each hexagonal lattice are aligned.

[0028] The first electrode may be aligned with the second electrode. The electrodes may be aligned when the shortest distance between a predetermined conductive strut 116 in the first electrode 110 and a conductive strut in the second electrode 120 is the electrode spacing.

[0029] The first electrode may be oppositely aligned with the second electrode. The first electrode may be oppositely aligned with the second electrode when the shortest distance between the center of the polygonal opening of the lattice of the first electrode and the conductive strut node of the lattice of the second electrode is the electrode spacing. Opposite alignment may provide an improvement in ion modification of ions when the first electrode and the second electrode operate as an ion modifier.

[0030] One aspect provides a Tyndall-Powell ion gate, the Tyndall-Powell ion gate comprising a first electrode and a second electrode, each of the first electrode and the second electrode being a conductive structure comprising a hexagonal lattice, the hexagonal lattice being planar, a holder configured to hold the first electrode spaced from the second electrode by an electrode spacing such that the hexagonal lattice of the plane of the first electrode is parallel to the hexagonal lattice of the plane of the second electrode.

[0031] The ion gate may comprise two electrodes, each electrode having a hexagonal grid that, with respect to a predetermined thickness of the conductive struts of the grid, may have a relatively large open area (e.g., a larger ratio of open area to closed area of ​​the grid) compared to other electrode grid shapes (e.g., a square grid shape). For example, if all other things (e.g., grid area, grid shape) are the same, an electrode having a hexagonal grid may have the highest ratio of open area to closed area and therefore advantageously provide improved ion transmission through the electrode (e.g., through the open area).

[0032] The Tyndall-Powell ion gate may include a first electrode voltage circuit configured to change the voltage of a first electrode, and a second electrode voltage circuit configured to change the voltage of a second electrode, wherein the first electrode voltage circuit and the second electrode voltage circuit are configured to control the passage of ions through the hexagonal holes of the electrodes of the ion gate by controlling the barrier voltage between the first electrode and the second electrode by changing the voltage of the first electrode and the voltage of the second electrode.

[0033] The Tyndall-Powell ion gate may include a first electrode voltage circuit configured to control the voltage of a first electrode and a second electrode voltage circuit configured to control the voltage of a second electrode, wherein one of the first or second electrode voltage circuits is configured to control the passage of ions through the hexagonal holes of the electrodes of the ion gate by controlling the barrier voltage between the first and second electrodes by changing the voltage of either the first or second electrode.

[0034] The gate may be advantageously configured to selectively allow the passage of ions having one or more predetermined properties.

[0035] The first electrode voltage circuit and the second electrode voltage circuit may be configured to modify the ions placed between the first electrode and the second electrode by providing a modified voltage between the first electrode and the second electrode by changing the voltage of the first electrode and the voltage of the second electrode.

[0036] The ion gate may also function as an ion modifier. When functioning as an ion modifier, the ion gate may split an ion (e.g., a parent ion) into several other ions (e.g., daughter ions).

[0037] Each of the first and second electrodes may include a frame configured to provide additional support to the hexagonal grid. The frame may be configured to provide additional support to the hexagonal grid, which may advantageously allow for the provision of a hexagonal grid having a larger open area (e.g., requiring additional support from the frame) compared to a hexagonal grid having a relatively small open area (e.g., not requiring additional support from the frame).

[0038] Each electrode frame may include a plurality of frame positioning mechanisms, each of which may be configured to engage with a plurality of holder positioning mechanisms in a holder that holds the electrode.

[0039] The engagement of the frame positioning mechanism of each electrode with respect to the holder positioning mechanism may be such that the conductive structure of the first electrode is positioned parallel to the conductive structure of the second electrode.

[0040] The engagement of the frame positioning mechanism of each electrode with respect to the holder positioning mechanism may be such that the hexagonal grid of the first electrode is aligned with respect to the hexagonal grid of the second electrode in a direction perpendicular to the hexagonal grid of each electrode.

[0041] In the example, the engagement of the frame positioning mechanism of each electrode with respect to the holder positioning mechanism may be such that the conductive structure of the first electrode is aligned parallel to the conductive structure of the second electrode, or the hexagonal grid of the first electrode is aligned opposite to the hexagonal grid of the second electrode in a direction perpendicular to the frame area of ​​each electrode. Such oppositely aligned electrodes may improve ion modification when operating as an ion modifier compared to similar electrodes aligned perpendicular to the hexagonal grid.

[0042] The first electrode and the second electrode may be aligned such that the difference in alignment between the conductive elements of the first electrode and the conductive elements of the second electrode is less than the width of the conductive elements in a direction parallel to the conductive structure.

[0043] The mechanisms listed above may advantageously allow the two electrodes to be provided in an aligned arrangement. For example, the above arrangement of the electrodes to mean horizontal and / or mean vertical positions.

[0044] The frame positioning mechanism may be positioned such that, when the frame positioning mechanism is placed in the holder positioning mechanism, the conductive struts of each hexagonal grid are aligned.

[0045] The first electrode may be aligned with respect to the second electrode. The electrodes may be aligned such that the shortest distance between a predetermined conductive strut 116 on the first electrode 110 and a conductive strut on the second electrode 120 is equal to the electrode spacing.

[0046] The first electrode may be aligned opposite to the second electrode. The first electrode may be aligned opposite to the second electrode when the shortest distance between the center of the polygonal aperture of the first electrode's grid and the conductive strut node of the second electrode's grid is the electrode spacing. Opposite alignment may provide improved ion modification of ions when the first and second electrodes act as ion modifiers.

[0047] The holder may include a spacer positioned between the first electrode and the second electrode.

[0048] A predetermined distance between the first and second electrodes may be provided using a spacer without requiring calibration that takes time, such as the distance between the electrodes. In this example, the electrode distance (e.g., the distance between the first and second electrodes) may be 0.2 mm.

[0049] The spacer may be formed from one of the following: liquid crystal polymer, polytetrafluoroethylene (PTFE), polyetheretherketone (PEEK), or ceramic. These materials have the advantage of having low susceptibility to electrical creepage.

[0050] The first electrode voltage circuit and the second electrode voltage circuit may be configured to control the passage of ions through the hexagonal holes of the ion gate electrodes in the drift direction of the ion mobility spectrometer by controlling the barrier voltage between the first electrode and the second electrode by changing the voltage of the first electrode and the voltage of the second electrode, and the drift direction is perpendicular to the conductive structure of each electrode.

[0051] The gate may be advantageously configured to selectively allow the passage of ions having one or more predetermined properties.

[0052] One embodiment provides an electrode for a Tyndall-Powell ion gate, the electrode comprising a frame defining the extent of a frame area, and a conductive structure disposed within the frame area, wherein the conductive structure comprises conductive elements arranged in a regular pattern to provide a regular packing arrangement of polygonal apertures between the conductive elements, and the proportion of the frame area including the open areas provided by the polygonal apertures is between 75.0% and 95.0%. Preferably, the proportion of the frame area including the open areas provided by the polygonal apertures may be 88.9%.

[0053] One embodiment provides a method for manufacturing a Tyndall-Powell ion gate for an ion mobility spectrometer, the method comprising mechanically fixing a first electrode and a second electrode to each other so as to provide a gap between the first electrode and the second electrode, the first electrode and the second electrode being formed by electrodeposition.

[0054] The method may include forming the first electrode and the second electrode by electrodeposition.

[0055] The electrode may advantageously be provided with an integrally formed frame and grid, thereby improving the strength of the electrode and / or reducing the time and / or cost of manufacturing.

[0056] Mechanically fixing the first electrode and the second electrode to each other so as to provide a gap between them may include engaging a first set of holder positioning mechanisms with a corresponding frame positioning mechanism of the first electrode's frame and engaging a second set of holder positioning mechanisms with a corresponding frame positioning mechanism of the second electrode's frame.

[0057] An ion gate having two electrodes may be advantageously provided. The ion gate may operate as an ion modifier.

[0058] One embodiment provides a method for manufacturing an electrode for a Tyndall-Powell ion gate, wherein the electrode comprises a conductive structure having a hexagonal grid and a frame surrounding the hexagonal grid, the hexagonal grid being planar and composed of conductive struts, the frame being configured to provide additional support to the hexagonal grid, and the frame comprising a plurality of frame positioning mechanisms configured to engage with each of a plurality of holder positioning mechanisms in a holder for holding the electrode, the method comprising arranging frame positioning mechanisms around the frame to provide a plurality of frame positioning mechanisms, the mean horizontal and / or mean vertical positions of the plurality of frame positioning mechanisms being located less than a predetermined distance from the center of the hexagonal grid, the predetermined distance being based on the width of the conductive struts in a direction parallel to the hexagonal grid.

[0059] The mechanisms listed above may advantageously allow the two electrodes to be provided in an aligned arrangement. For example, by providing the electrodes with the above arrangement in an average horizontal position and / or average vertical position,

[0060] The frame positioning mechanism may be positioned such that, when the frame positioning mechanism is placed in the holder positioning mechanism, the conductive struts of each hexagonal grid are aligned.

[0061] The electrodes may be aligned such that the shortest distance between a predetermined conductive strut 116 on the first electrode 110 and a conductive strut on the second electrode 120 is equal to the electrode spacing.

[0062] The first electrode may be aligned opposite to the second electrode. The first electrode may be aligned opposite to the second electrode when the shortest distance between the center of the polygonal aperture of the first electrode's grid and the conductive strut node of the second electrode's grid is the electrode spacing. Opposite alignment may provide improved ion modification of ions when the first and second electrodes act as ion modifiers.

[0063] One embodiment provides a method for manufacturing a Tyndall-Powell ion gate comprising two electrodes manufactured according to any method described herein. In an example, the method may include forming the first and second electrodes by electrodeposition.

[0064] The first electrode and the second electrode may be aligned such that the difference in alignment between the conductive elements of the first electrode and the conductive elements of the second electrode is less than the width of the conductive elements in a direction parallel to the frame area. [Brief explanation of the drawing]

[0065] Herein, embodiments of the present disclosure are described only as illustrative examples with reference to the accompanying drawings. [Figure 1] Figure 1 shows a perspective view of an ion gate equipped with two electrodes. [Figure 2A] Figure 2A shows a longitudinal plan view of the ion gate in Figure 1, which represents the first electrode. [Figure 2B] Figure 2B shows a longitudinal plan view of the ion gate opposite to that of Figure 1 and Figure 2A, which show the second electrode. [Figure 3A]Figure 3A shows a lateral plan view of the first electrode of the ion gate in Figure 1. [Figure 3B] Figure 3B shows an enlarged lateral plan view of a portion of the first electrode shown in Figure 3A. [Figure 3C] Figure 3C shows a longitudinal plan view of a portion of the grid of the first electrode 110 shown in Figures 3A and 3B. [Figure 4] Figure 4 shows an enlarged lateral cross-sectional view of the ion gate in Figure 1. [Figure 5] Figure 5 shows a flowchart illustrating the method for manufacturing electrodes. [Figure 6] Figure 6 shows a flowchart illustrating the method for manufacturing a Tyndall-Powell ion gate.

[0066] In drawings, similar reference numerals indicate similar elements. [Modes for carrying out the invention]

[0067] Figure 1 shows a perspective view of an ion gate 100 comprising a first electrode 110 and a second electrode 120. Figure 2A shows a longitudinal plan view of the ion gate 100 of Figure 1 showing the first electrode 110, and Figure 2B shows a longitudinal plan view of the ion gate 100 opposite to that shown in Figure 2B, thereby showing the second electrode 120.

[0068] The ion gate 100 comprises a first electrode 110, a second electrode 120, a holder 130, and a spacer 140. The first electrode 110, the second electrode 120 (not visible in Figures 1, 2A, and 2B, but visible in Figure 4), and the spacer 140 are arranged within the holder 130; that is, the holder 130 holds the first electrode 110, the second electrode 120, and the spacer 140. The spacer 140 is positioned between the first electrode 110 and the second electrode 120, thereby providing an electrode gap Z between the first electrode 110 and the second electrode 120 (the gap Z is visible in Figure 4).

[0069] The first electrode 110 and the second electrode 120 are identical in the example shown in Figure 1. The first electrode 110 comprises a frame 111 that defines the range of the frame area 112, a conductive structure having a grid 113, and a frame position determination mechanism 114. Similarly, the second electrode 120 comprises a frame 121 that defines the range of the frame area 122, a conductive structure having a grid 123, and a frame position determination mechanism 124.

[0070] Figure 3A shows a lateral plan view of the first electrode 110 of the ion gate in Figure 1, and Figure 3B shows an enlarged lateral plan view of a portion of the first electrode 110 shown in Figure 3A. Figure 3C shows a longitudinal plan view of a portion of the lattice of the first electrode 110 shown in Figures 3A and 3B. For brevity, the first electrode 110 is described herein, but since the two electrodes are identical, it will be understood that the same description applies to the second electrode 120 as well.

[0071] Each electrode has a frame. The frame 111 defines the extent of the frame area 112 occupied by the grid. In Figures 1 and 2, the frame area is circular, but frame areas of any other shape may be provided (for example, the holes may be hexagonal).

[0072] The grid 113 is a planar conductive structure positioned within the frame area 112 of the frame 111. The grid 113 comprises a plurality of conductive struts 116. The grid 113 is connected to the frame 111. The frame 111 has a frame thickness 111T, and the grid 113 has a grid thickness 113T. The thickness is the spatial size of each element in the direction perpendicular to the plane defined by the grid 113. The frame thickness 111T is greater than the grid thickness 113T.

[0073] The electrical connection 115 is connected to the frame 111. The electrical connection 115, the frame 111, and the grid 113 are formed of a conductive material. The frame 111 and the grid 113 are formed integrally (i.e., formed as a single element). In this example, the electrical connection 115 is formed integrally with the frame 111 and the grid 113. The grid 113 is configured to be connected to a voltage source via the electrical connection 115.

[0074] The conductive struts 116 of the grid 113 define openings 117, i.e., the openings 117 are spaces provided between the conductive struts 116. Figures 1 to 3C show the hexagonal grid 113. The term hexagonal grid refers to a grid in which the openings 117 have a regular hexagonal shape, for example, the hexagonal grid has a honeycomb pattern.

[0075] Each conductive strut 116 has a length 116L, meaning all conductive struts 116 have the same length. Each conductive strut has a width 116W. In this example, the width 116W is 0.020 mm, but widths in the range of 0.080 mm to 0.005 mm are acceptable. Each conductive strut has a thickness 116T. In this example, the thickness 116T is 0.018 mm, but thicknesses in the range of 0.030 mm to 0.010 mm are acceptable.

[0076] Reducing the width 116W and / or thickness 116T of the grid 113 improves ion permeability through the electrode 110, but reduces the strength of the grid 116, resulting in the electrode being relatively easily damaged. One way to reduce the width and / or thickness of the grid of an electrode (e.g., a first electrode 110 and a second electrode 120) without sacrificing the robustness of the electrode is to provide a frame that provides additional support to the grid.

[0077] The thickness 111T of the frame 111 is selected so that the frame 111 is self-supporting and provides additional support to the grid 113. The integral formation of the frame 111 and the grid 113 also provides additional support to the grid 113.

[0078] Frame 111 is self-supporting when the shape of the hole in frame 111 does not deform in any direction under gravity (for example, with respect to a gravitational field). In this example, the hole remains circular when the frame is positioned such that the frame area is parallel to the local gravitational field (i.e., the frame is positioned perpendicular to the ground).

[0079] The grid 113 does not have to be self-supporting; that is, the grid thickness 113T and / or the width 113W of the conductive struts may be so thin that the grid does not allow the grid to maintain its shape in any orientation under gravity. The frame 111 provides additional support to the grid 113 when the grid 113 is not self-supporting, and the frame 111 withstands deformation of the frame 111 and the grid 113 in any orientation with respect to the gravitational field.

[0080] The thickness 111T required for the frame to stand on its own and provide additional support to the grid 113 depends on the material from which the frame is formed. Typically, it is a metal or a metal alloy, and the frame thickness is approximately 0.05 mm to 0.20 mm. If the frame and grid are integrally formed from nickel, the frame thickness is 0.10 mm.

[0081] The frame 111 generally has electrical connections 115 extending from the grid. The electrical connections 115 are configured to connect to a first electrode voltage circuit.

[0082] The shape of the grid 113 shown in Figure 3C will be described in more detail below. However, it should be noted that the teachings described herein are not limited to grids having a hexagonal shape. Electrodes for ion gates may have any grid shape (e.g., any polygonal shape defined by conductive struts). Electrodes may be characterized in a more general way without requiring an explicit description of the grid shape. An electrode comprises a frame defining the extent of a frame area, i.e., a frame defining the extent of a frame area, and a conductive structure placed in the frame area. The conductive structure comprises conductive elements arranged in a regular pattern to provide a regular packing arrangement of polygonal openings (e.g., triangles, squares, hexagons, etc.) between the conductive elements. The percentage of the frame area containing the open areas provided by the polygonal openings is between 75.0% and 95.0%. In a preferred embodiment where the polygonal openings are hexagonal, the percentage is 88.9%.

[0083] Increasing the proportion of the frame area that includes open areas is accompanied by a corresponding increase in ion transmission through the electrodes, which in turn may improve the resolution of the spectrometer (e.g., IMS) in which the electrodes are placed. The proportion depends on the selected regular pattern that provides regular filling of the polygonal aperture and the width of the conductive elements (i.e., the spatial size of the conductive struts in the frame area).

[0084] The inventors have found that a regular pattern providing a packed arrangement of polygonal apertures provides strength to the conductive structure, and that reducing the width of the conductive struts in the regular pattern improves ion permeability through the electrodes. These parameters may be modified to find a trade-off between strength and improved ion permeability, and the inventors have found that a percentage of the frame area containing the open area provided by the polygonal apertures between 75.0% and 95.0% provides an excellent practical balance between strength and permeability.

[0085] Those skilled in the art will understand that there are numerous possible lengths, widths, and thicknesses of conductive struts, as well as numerous possible regular patterns that provide electrodes with a ratio of frame area including open areas provided by polygonal apertures between 75.0% and 95.0%. Therefore, those skilled in the art will understand that this is a reasonable characterization of the electrode, for the reason that such characterization is not so broad as to exceed the present invention (e.g., the balance between intensity and ion permeability), but not so narrow as to deprive the applicant of a legitimate interest in the present disclosure of the present invention.

[0086] The hexagonal grid 113 shown in Figure 3C has conductive struts 116. Multiple conductive struts 116 are integrally formed (i.e., formed as a single element) to provide the grid 113. The conductive struts 116 are joined at conductive strut nodes 116N. To provide a honeycomb shape, each conductive strut node 116N has three conductive struts 116 radiating from the conductive strut node 116N. The three conductive struts 116 are arranged in a plane (i.e., a plane of the conductive structure that coincides with the frame area 112) and are equidistant around the node 116N in that plane, i.e., the distance between a given conductive strut 116 and two adjacent conductive struts 116 is 60°.

[0087] More specifically, each hexagonal opening 117 is defined by six conductive struts 116. These six conductive struts 116 are arranged in an end-to-end closed configuration, i.e., around the perimeter of 6L. The first conductive strut is connected at one end to the end of the second conductive strut and at the other end to the end of the sixth conductive strut. The other end of the second conductive strut is connected to the end of the third conductive strut, and so on, i.e., the pattern continues for the fourth conductive strut, the fifth conductive strut, the sixth conductive strut, and so on (the last of which is connected to the fifth conductive strut and the first conductive strut). The angle between adjacent struts (for example, between the first conductive strut and the second conductive strut) is 120°. Thus, each of the six conductive struts provides the sides of a regular hexagon, thereby defining a hexagonal opening (i.e., a hole).

[0088] A regular hexagonal pattern (e.g., honeycomb) provides a polygonal aperture that has a larger area than a regular square or triangular pattern (i.e., when all other factors such as conductive strut width are equal). One way to provide an electrode having a frame area ratio (i.e., provided by the polygonal aperture) between 75.0% and 95.0% of the open area is to use a regular hexagonal pattern and conductive struts of appropriate width.

[0089] By providing a first electrode 110 and a second electrode 120 having a hexagonal grid, the electrodes have a relatively large open area with respect to a predetermined thickness of the conductive struts of the grid compared to other electrode grid shapes (e.g., a square grid shape). For example, all other things being the same (e.g., grid area, grid shape), an electrode having a hexagonal grid may have the highest ratio of open area to closed area and thus advantageously provide improved ion transmission through the electrode (e.g., through the open area).

[0090] Figure 4 shows an enlarged lateral cross-sectional view of the ion gate 100 of Figure 1. Figure 4 shows a portion of the first electrode 110, the frame positioning mechanism 114 of the first electrode, the corresponding holder positioning mechanism 135-1 for engaging with the frame positioning mechanism 114 of the first electrode, a portion of the second electrode 120, the frame positioning mechanism 124 of the second electrode, the holder 130, the spacer 140, and the electrode spacing Z between the first electrode 110 and the second electrode 120.

[0091] The spacer 140 is positioned in the holder 130 between the first electrode 110 and the second electrode 120. The first electrode 110 is in contact with the first side surface of the spacer 140, the second electrode 120 is in contact with the second side surface of the spacer 140, and the first side surface of the spacer is on the opposite side from the second side surface of the spacer. The spacer 140 has a thickness equal to the electrode spacing Z.

[0092] The spacer 140 is formed from a material that is less susceptible to electrical creepage. Damage to the spacer due to the electric field generated by the first and second electrodes is prevented (or relatively reduced) by forming the spacer 140 from a material that is less susceptible to electrical creepage.

[0093] The frame 111 of the first electrode 110 has four frame positioning mechanisms 114 (see Figure 2A). The holder 130 has a first set of holder positioning mechanisms 135-1 arranged on the holder 130. The four holder positioning mechanisms 135-1 are present in the first set.

[0094] The four frame positioning mechanisms 114 are arranged equidistantly around the center of a circular hole that defines the extent of the frame area 112; that is, each frame positioning mechanism is positioned at a corner of a square centered on the center of the circular hole (see, for example, Figure 2A). The frame positioning mechanism 114 is a peg that protrudes perpendicularly to the conductive structure of the electrode (i.e., the grid 113). The first set of holder positioning mechanisms 135-1 are holes corresponding to the pegs that are frame positioning mechanisms 114 in size, shape, and position. Each given pair of hole-peg (114 and 135-1) is configured to provide a friction fit (e.g., an interlocking fit or a saddle fit) between the hole and the peg.

[0095] Each of the four holder positioning mechanisms 135-1 in the first set is positioned to engage with each of the frame positioning mechanisms of the first electrode 110, that is, the holder positioning mechanism 114 is positioned around the holder 130 in a manner similar to the arrangement of the frame positioning mechanism 114.

[0096] The frame 121 of the second electrode 120 has four frame positioning mechanisms 124 (see Figure 2B). The holder 130 has a second set of holder positioning mechanisms 135-2 that are positioned on the holder 130. The four holder positioning mechanisms 135-2 are present in the second set.

[0097] Similar to the four frame positioning mechanisms 114, the four frame positioning mechanisms 124 are arranged equidistantly around the center of the circular hole that defines the extent of the frame area 122; that is, each frame positioning mechanism is positioned at a corner of a square centered on the center of the circular hole (see, for example, Figure 2B). The frame positioning mechanism 124 is a peg that protrudes perpendicularly to the conductive structure of the electrode (i.e., the grid 123). The second set of holder positioning mechanisms 135-2 are holes corresponding to the pegs that are frame positioning mechanisms 124 in size, shape and position. Each given pair of hole-peg (124 and 135-2) is configured to provide a friction fit (e.g., an interlocking fit or a saddle fit) between the hole and the peg.

[0098] Each of the four holder positioning mechanisms 135-2 in the second set is positioned to engage with each of the frame positioning mechanisms of the second electrode 120, that is, the holder positioning mechanism 124 is positioned around the holder 130 in a manner similar to the arrangement of the frame positioning mechanism 124.

[0099] The first set of holder positioning mechanisms 135-1 and the second set of holder positioning mechanisms 135-2 are arranged so as to position the first electrode 110 parallel to the second electrode 120. That is, when the frame positioning mechanism 114 of the first electrode 110 engages with the first set of holder positioning mechanisms 135-1 and the frame positioning mechanism 124 of the second electrode 120 engages with the second set of holder positioning mechanisms 135-2, the planar conductive structure (i.e., grid 113) of the first electrode 110 is parallel to the planar conductive structure (i.e., grid 123) of the second electrode 120.

[0100] The first set of holder positioning mechanisms 135-1 and the second set of holder positioning mechanisms 135-2 are arranged to position the first electrode 110 in alignment with the second electrode 120, that is, when the frame positioning mechanism of the first electrode engages with the first set of holder positioning mechanisms and the frame positioning mechanism of the second electrode engages with the second set of holder positioning mechanisms, the conductive struts of the first electrode are aligned with those of the second electrode 120 in a direction perpendicular to the conductive structure in the plane between the first electrode 110 and the second electrode 120 (i.e., perpendicular to the grids 113 and 123).

[0101] The alignment of the first electrode 110 and the second electrode 120 is considered to be when the shortest distance between a predetermined conductive strut 116 on the first electrode 110 and a conductive strut 126 on the second electrode 120 is equal to the electrode spacing Z.

[0102] In other words, when the first electrode 110 and the second electrode 120 are aligned, a conceptual ion or molecule moving perpendicular to the first and second lattices 113 and 123 passes through an opening (e.g., a hole) 117 in the lattice 113 of the first electrode 110, and also passes through an opening 127 in the lattice 123 of the second electrode 120.

[0103] In contrast, if the first and second electrodes are not aligned, a conceptual ion or molecule moving perpendicular to the first and second lattices, passing through holes in the lattice of the first electrode 110, may collide with the conductive struts of the lattice of the second electrode 120.

[0104] The first and second electrodes are held by a holder (i.e., by the engagement of each positioning mechanism), and the positioning mechanism provides parallel placement and alignment of the two electrodes, thus simplifying the assembly of the ion gate 100. Advantageously, the electrodes do not need to be manually placed parallel or aligned.

[0105] The assembly of the ion gate 100 is simplified because the first and second electrodes can be positioned at the required electrode spacing Z by arranging the first element and the second electrode adjacent to the spacer (i.e., the first electrode adjacent to the first side of the spacer and the second electrode adjacent to the second side of the spacer). Advantageously, the electrode spacing Z does not need to be manually provided, for example, by arranging the electrodes, manually checking the spacing, and then adjusting and remeasuring the spacing until the required spacing is provided.

[0106] Figure 5 shows a flowchart illustrating a method 500 for manufacturing electrodes such as electrode 110 or electrode 120.

[0107] Method 500 includes the following steps:

[0108] Method 500 includes the step (510) of forming electrodes by electrodeposition. This manufacturing process provides an integral element that can improve the strength of the electrodes (i.e., the grid and frame are formed integrally).

[0109] Step 510 is optional, as the electrodes may be formed by a different manufacturing process. In examples where a single, integrated electrode is required, any suitable additive or subtractive manufacturing process may be used to provide the electrode.

[0110] Any manufacturing method, such as an additive manufacturing method (as described in more detail herein) like electrodeposition, or a subtractive manufacturing method (such as computer numerical control (CNC) machining), may be used to obtain the frame 111 and the grid 113, which are formed as a single unit.

[0111] Method 500 includes the step (520) of arranging frame positioning mechanisms around a frame to provide a plurality of frame positioning mechanisms, wherein the average horizontal and / or average vertical positions of the plurality of frame positioning mechanisms are located less than a predetermined distance from the center of the hexagonal grid, the predetermined distance being based on the width of the conductive struts in a direction parallel to the hexagonal grid.

[0112] It will be understood that steps 520 and 510 may be performed together (for example, in cases where the frame positioning mechanism is formed integrally with the frame).

[0113] Two electrodes, which are aligned within a predetermined distance when positioned in a holder (i.e., by engaging each frame positioning mechanism with the corresponding holder positioning mechanism), are provided by repeating step 520 (and optionally, step 510 in examples where the steps are performed together, i.e., simultaneously) to obtain two electrodes.

[0114] Preferably, the predetermined distance is equal to the width of the conductive strut of the electrode, thereby providing two electrodes aligned within a tolerance of one width of the conductive strut (as described in more detail herein).

[0115] Figure 6 shows a flowchart illustrating method 600 for fabricating a Tyndall-Powell ion gate for an ion mobility spectrometer. Method 600 includes the following steps:

[0116] Method 600 includes the step (610) of placing the spacer element 140 inside the holder 130.

[0117] When the ion gate 100 is assembled, the spacer element 140 is positioned between the first electrode 110 and the second electrode 120, thereby providing the electrode spacing Z (see Figure 4).

[0118] The electrode spacing may be provided without using spacer elements; for example, the holder may hold a first electrode separated from a second electrode so that electrode spacing is provided between the two electrodes, or the spacer may be a separate element that can be placed within the holder 130, so this step 610 may be optional.

[0119] The method includes the step (620) of mechanically fixing the first electrode and the second electrode to each other so as to provide a gap between the first electrode and the second electrode, the first electrode and the second electrode being formed by electrodeposition.

[0120] In the examples shown in Figures 1 to 4, the frame positioning mechanism 114 of the first electrode 110 is a peg, the holder positioning mechanism 135-1 of the first set is a hole, the frame positioning mechanism 124 of the second electrode 120 is a peg, and the holder positioning mechanism 135-2 of the second set is a hole.

[0121] Step 620 may include a substep (621) of engaging the first set of holder positioning mechanisms with the corresponding frame positioning mechanism of the frame of the first electrode.

[0122] Substep 611 includes aligning each peg of the first electrode 110 with each hole in the holder, and then pressing the first electrode 110 and the holder 130 together to insert the peg into the hole until the side of the first electrode contacts the first side of the spacer 140. The peg and hole provide an interlocking fit that holds the first electrode 110 and the holder 130 together.

[0123] Substep 612 includes aligning each peg of the second electrode 120 with respect to each hole in the holder, and then pressing the second electrode 110 and the holder 130 together to insert the peg into the hole until the side surface of the second electrode contacts the second side surface of the spacer 140. In this way, the first electrode 110 and the second electrode 120 are separated by the spacer 140, which separates the electrodes 110 and 120 by an electrode spacing Z (see Figure 4). Similarly, the peg and the hole provide an interlocking fit that holds the second electrode 120 and the holder 130 together.

[0124] More generally, step 620 may be performed by engaging the frame positioning mechanism of the first electrode with the holder positioning mechanism of the holder, and engaging the frame positioning mechanism of the second electrode with the holder positioning mechanism of the holder. In the example, The frame positioning mechanism may be a peg (i.e., a projection), and all of the corresponding holder positioning mechanisms may be holes (for example, the number of pegs corresponds to the number of holes), and the holes are configured to receive and engage the pegs. Thus, the method involves inserting the pegs into the holes. The frame positioning mechanism may be a hole, and all of the holder positioning mechanisms may be pegs (for example, the number of pegs corresponds to the number of holes), and the holes are configured to receive and engage with other holes. Thus, the method involves inserting pegs into the holes. The frame positioning mechanism may comprise at least one peg (e.g., X pegs) and at least one hole (e.g., Y holes), and the holder positioning mechanism may comprise at least one peg (e.g., Y pegs) and at least one hole (e.g., X holes), the hole engaging with the peg. Therefore, the method includes inserting the peg into the hole.

[0125] It will be understood that, optionally, method 600 may further include any of the steps of method 500 for manufacturing an electrode.

[0126] The ion gate 100 can operate as a Tyndall-Powell ion gate. When in use, the first electrode 110 is connected to a first electrode voltage circuit configured to change the voltage of the first electrode 110, and the second electrode 120 is connected to a second electrode voltage circuit configured to change the voltage of the second electrode 120. A controller is provided to control the first electrode voltage circuit and the second electrode voltage circuit.

[0127] The controller controls the barrier voltage between the first electrode 110 and the second electrode 120 by changing the voltage of the first electrode 110 and the voltage of the second electrode 120, thereby controlling the passage of ions through the hexagonal holes of electrodes 110 and 120 of the ion gate 100, and controls the voltage between the first electrode 110 and the second electrode 120 by changing the voltage of the first electrode 110 and the voltage of the second electrode 120, thereby providing a modified voltage between the first electrode 110 and the second electrode 120, thereby modifying the ions placed between the first electrode 110 and the second electrode 120.

[0128] The electrode comprises a frame defining a frame area and a grid positioned within the frame area. The grid is a planar structure positioned within the frame area; for example, the grid defines a plane. The grid comprises a plurality of conductive struts. The conductive struts define an opening.

[0129] It will be understood that each of the grids described herein may be made of a mesh-like material, and the frame may be separate from the grid (for example, the frame and the grid may be formed integrally, but the frame and the grid may have different thicknesses).

[0130] The grid may include openings having any polygonal shape or shape(s). The grids described herein may have openings having convex regular polygons that allow the space to be tiled (e.g., Euclidean tiled). Any regular tile (e.g., equilateral triangular openings or regular hexagonal openings) or square openings) or semi-regular tile.

[0131] A hexagonal grid refers to a plurality of conductive struts arranged to provide regular hexagons for tiling a frame area (for example, in a honeycomb pattern). The plurality of conductive struts may be formed integrally (i.e., formed as a single element). The plurality of conductive struts and the frame may be formed integrally (i.e., formed as a single element). The frame may be thicker than the grid, for example, in a direction perpendicular to the plane defined by the grid, and the frame may have a larger spatial size than the grid.

[0132] The grid may have a regular triangular pattern. A regular triangular pattern provides polygonal apertures with a smaller area than a regular hexagonal pattern (for example, a regular triangular pattern may be inherently stronger than a regular hexagonal pattern, all other conditions equal). One way to provide electrodes having a frame area ratio including open areas provided by polygonal apertures between 75.0% and 95.0% is to use a regular triangular pattern and conductive struts of appropriate width (i.e., conductive struts having a smaller width than an equivalent regular hexagonal pattern having the same proportion of open areas). All other factors equal (i.e., the conductive struts have the same length, width and thickness in both cases), the triangular pattern is inherently stronger than an equivalent hexagonal pattern, but conductive struts with greater width are inherently stronger than conductive struts with less width.

[0133] In the example, the holder positioning mechanism may be located in a spacer. In other words, the spacer may comprise a first set of holder positioning mechanisms configured to engage with the frame positioning mechanism of the first electrode, and a second set of holder positioning mechanisms configured to engage with the frame positioning mechanism of the second electrode. As described herein, the first electrode is positioned parallel to the second electrode by engaging the first set of holder positioning mechanisms (e.g., located in a spacer) with the frame positioning mechanism of the first electrode, and by engaging the second set of holder positioning mechanisms (e.g., located in a spacer) with the frame positioning mechanism of the second electrode.

[0134] The electrodes described herein may have a frame and a conductive structure (i.e., a lattice formed integrally). This means that the frame and the lattice are formed integrally from a single continuous portion of the conductive material, i.e., not from several elements that are bonded together.

[0135] The first and second electrodes described herein are identical to each other. However, it will be understood that the electrodes may have differences, for example, different frame positioning mechanisms (e.g., different configurations, numbers, and / or shapes relating to the positioning mechanisms), different sizes, and / or different grids.

[0136] In the example, the electrodes may be aligned within tolerance by engaging the electrode frame positioning mechanism with the corresponding holder positioning mechanism. The tolerance may be based on the width of the conductive element, for example, the width of the conductive element. For example, if the shortest distance between the conductive strut of the first electrode and the conductive strut of the second electrode is the electrode spacing Z plus the strut width (i.e., 116W), the electrodes may be aligned within tolerance equal to the width of the conductive element.

[0137] Ion gates comprising two electrodes as described herein may be provided. Combined ion gates and modifiers comprising two electrodes as described herein may be provided (for example, the same two electrodes may operate as an ion gate and an ion modifier). In an example, combined ion gates and modifiers comprising three electrodes as described herein may be provided (for example, two of the electrodes may operate as ion gates, and the two electrodes may operate to provide the first ion modifier (for example, they may operate as a single electrode connected to the same voltage), and the third electrode may operate as the second ion modifier).

[0138] The ion gates described herein may be provided in a spectrometer such as an ion mobility spectrometer. In this specification, an ion mobility spectrometer is provided which comprises an ion gate as described herein and at least one of a first electrode voltage circuit, a second electrode voltage circuit, a drift tube (e.g., a charge-mass transport tube), a drift electrode, and a detector.

[0139] The ion gates described herein may be provided as kits, each kit comprising an ion gate and at least one of the following: a first electrode voltage circuit, a second electrode voltage circuit, a drift tube (e.g., a charge-mass transport tube), a drift electrode, and a detector.

[0140] It will be understood that the ion gates described herein may be provided individually (i.e., not as a kit or as part of an assembled ion mobility spectrometer) to allow the user to replace the ion gate in an existing system, such as an ion mobility spectrometer (for example, to replace an ion gate damaged by wear and fracture).

[0141] It will be understood that electrodes for ion gates described herein may be provided individually (i.e., not as a kit or as an assembled ion gate) to allow, for example, a user to replace electrodes in an existing ion gate system (e.g., to replace electrodes damaged by wear and breakage).

[0142] In the context of this disclosure, it is clear from viewing the drawings in Figures 3A and 3B that the hexagonal grid is a planar structure and that the frame has a thickness perpendicular to the plane defined by the hexagonal grid that is greater than the thickness of the hexagonal grid perpendicular to the plane defined by the hexagonal grid.

[0143] A Tyndall-Powell gate will be understood to have two electrodes separated in the direction of ion movement in an ion mobility spectrometer. Each electrode has a conductive structure with an opening that allows ions to pass through. A barrier voltage is provided between the two electrodes to selectively allow ions to pass through the ion gate. The arrangement of the Tyndall-Powell gate is described in Tyndall and Powell, 1930, "The mobility of ions in pure gases," Proc.R.Soc.Lond.A129:162-180.

[0144] Certain features of the methods described herein may be implemented in hardware, and one or more functions of the apparatus may be implemented in method steps. Furthermore, it will be understood in the context of this disclosure that the methods described herein do not necessarily have to be performed in the order described herein, nor do they necessarily have to be performed in the order shown in the drawings. Thus, aspects of this disclosure described with reference to a product or apparatus are also intended to be implemented as methods, and vice versa. The methods described herein may be implemented as computer programs or hardware, or any combination thereof. Computer programs include software, middleware, firmware, and any combination thereof. Such programs may be provided as signals or network messages, or recorded on computer-readable media such as tangible computer-readable media capable of storing computer programs in a non-temporary form. Hardware includes computers, handheld devices, programmable processors, general-purpose processors, application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), and arrays of logic gates.

[0145] Any processor used in a computer system (and any of the operations and devices outlined herein) may be implemented using fixed logic, such as an assembly of logic gates, or programmable logic, such as software and / or computer program instructions executed by the processor. A computer system may include a central processing unit (CPU) and associated memory connected to an image processing unit (GPU) and associated memory. Other types of programmable logic include programmable processors, programmable digital logic, such as field-programmable gate arrays (FPGAs), tensor processing units (TPUs), erasable programmable read-only memory (EPROMs), electrically erasable programmable read-only memory (EEPROMs), application-specific integrated circuits (ASICs), or any other types of digital logic, software, code, electronic instructions, flash memory, optical discs, CD-ROMs, DVD-ROMs, magnetic or optical cards, other types of machine-readable media suitable for storing electronic instructions, or any suitable combination thereof. Such data storage media may also provide data stores for the computer system (and any of the devices outlined herein).

[0146] From the above description, it will be understood that the embodiments shown in the figures are merely illustrative and include features that may be generalized, omitted, or replaced as described herein and in the claims. In the context of this disclosure, other examples and variations of the apparatus and methods described herein will be apparent to those skilled in the art.

Claims

1. An electrode that provides a Tyndale-Powell gate structure, The electrode is A conductive structure having a hexagonal lattice, The frame surrounding the hexagonal grid, It has, The aforementioned hexagonal grid is a planar structure that defines a plane, The frame is configured to provide additional support to the hexagonal grid, The frame has a thickness perpendicular to the plane defined by the hexagonal grid, which is greater than the thickness of the hexagonal grid perpendicular to the plane defined by the hexagonal grid. An electrode characterized by the following features.

2. The frame and the hexagonal grid are integral. The electrode according to claim 1.

3. The frame and the conductive structure are substantially composed of metals suitable for electrodeposition. The electrode according to claim 2.

4. The aforementioned conductive structure is The conductive struts forming the hexagonal grid, Equipped with, The conductive strut has a width between 0.080 mm and 0.005 mm in a direction parallel to the hexagonal grid. The electrode according to any one of claims 1 to 3.

5. The aforementioned conductive structure is The conductive struts forming the hexagonal grid, Equipped with, The conductive strut has a thickness between 0.080 mm and 0.005 mm in a direction perpendicular to the hexagonal grid. The electrode according to any one of claims 1 to 4.

6. The aforementioned frame is A plurality of frame positioning mechanisms configured to engage with each of the plurality of holder positioning mechanisms in the holder that holds the electrode, Equipped with, The electrode according to any one of claims 1 to 5.

7. The engagement of the frame positioning mechanism of each electrode with respect to the holder positioning mechanism is such that the conductive structure of the first electrode is positioned parallel to the conductive structure of the second electrode. The electrode according to claim 6.

8. The engagement of the frame positioning mechanism of each electrode with respect to the holder positioning mechanism aligns the hexagonal grid of the first electrode with respect to the hexagonal grid of the second electrode in a direction perpendicular to the hexagonal grid of each electrode. The electrode according to claim 7.

9. At least one of the frame positioning mechanisms is provided with a hole, and at least one of the holder positioning mechanisms is provided with a peg configured to fit into the hole, At least one of the holder positioning mechanisms is provided with a hole, and at least one of the frame positioning mechanisms is provided with a peg configured to fit into the hole, It is one of the following: The electrode according to any one of claims 7 to 8.

10. The frame positioning mechanism is arranged around the frame to provide a plurality of frame positioning mechanisms, The average horizontal position and / or average vertical position of the plurality of frame positioning mechanisms are arranged at a distance less than a predetermined distance from the center of the hexagonal grid. The predetermined distance is based on the width of the conductive strut in a direction parallel to the hexagonal grid. The electrode according to any one of claims 6 to 9.

11. An apparatus comprising at least two electrodes according to any one of claims 6 to 9, wherein the frame positioning mechanism is positioned such that when the frame positioning mechanism is placed in the holder positioning mechanism, the conductive struts of each of the hexagonal grids are aligned. A device characterized by the following features.

12. A first electrode and a second electrode, each of the first and second electrodes having a conductive structure comprising a hexagonal grid, wherein the hexagonal grid is planar, the first electrode and the second electrode having a conductive structure, A holder configured to hold the first electrode relative to the second electrode such that the hexagonal grid on the plane of the first electrode is parallel to the hexagonal grid on the plane of the second electrode, and the first electrode is spaced apart from the second electrode by the electrode spacing, Having, A Tyndale-Powell ion gate characterized by the following features.

13. A first electrode voltage circuit configured to change the voltage of the first electrode, A second electrode voltage circuit configured to change the voltage of the second electrode, Equipped with, The first electrode voltage circuit and the second electrode voltage circuit are configured to control the passage of ions through the hexagonal holes of the electrodes of the ion gate by controlling the barrier voltage between the first electrode and the second electrode by changing the voltage of the first electrode and the voltage of the second electrode. The Tyndale-Powell ion gate according to claim 12.

14. The first electrode voltage circuit and the second electrode voltage circuit are configured to modify the ions placed between the first electrode and the second electrode by changing the voltage of the first electrode and the voltage of the second electrode, thereby providing a modified voltage between the first electrode and the second electrode. The Tyndale-Powell ion gate according to claim 13.

15. The first electrode and the second electrode are, A frame configured to provide additional support to the hexagonal grid, Equipped with, The Tyndale-Powell ion gate according to claim 14.

16. Each of the electrodes has the aforementioned frame, A plurality of frame positioning mechanisms configured to engage with each of the plurality of holder positioning mechanisms in the holder that holds the electrode, Equipped with, The Tyndale-Powell ion gate according to any one of claims 12 to 15.

17. The engagement of the frame positioning mechanism of each electrode with respect to the holder positioning mechanism is such that the conductive structure of the first electrode is positioned parallel to the conductive structure of the second electrode. The Tyndale-Powell ion gate according to claim 16.

18. The engagement of the frame positioning mechanism of each electrode with respect to the holder positioning mechanism aligns the hexagonal grid of the first electrode with respect to the hexagonal grid of the second electrode in a direction perpendicular to the hexagonal grid of each electrode. The Tyndale-Powell ion gate according to claim 17.

19. The first electrode and the second electrode are aligned such that the difference in alignment between the conductive elements of the first electrode and the conductive elements of the second electrode is less than the width of the conductive elements in a direction parallel to the hexagonal grid of each electrode. The Tyndale-Powell ion gate according to any one of claims 12 to 18.

20. The aforementioned holder is, A spacer is placed between the first electrode and the second electrode. Equipped with, The Tyndale-Powell ion gate according to any one of claims 12 to 19.

21. The spacer is formed from one of the following: liquid crystal polymer, polytetrafluoroethylene (PTFE), polyetheretherketone (PEEK), or ceramic. The Tyndale-Powell ion gate according to claim 20.

22. The electrode spacing is 0.2 mm. The Tyndale-Powell ion gate according to any one of claims 12 to 21.

23. An ion mobility spectrometer, The ion gate according to any one of claims 11 to 22, It has, The first electrode voltage circuit and the second electrode voltage circuit are configured to control the passage of ions through the hexagonal holes of the electrodes of the ion gate in the drift direction of the ion mobility spectrometer by controlling the barrier voltage between the first electrode and the second electrode by changing the voltage of the first electrode and the voltage of the second electrode. The drift direction is perpendicular to the conductive structure of each of the electrodes. An ion mobility spectrometer characterized by the following features.

24. An electrode for a Tyndale-Powell ion gate, A frame that defines the extent of the frame area, A conductive structure arranged within the frame area, It has, The aforementioned conductive structure is Conductive elements arranged in a regular pattern to provide a regular packing arrangement of polygonal openings between conductive elements, Equipped with, The proportion of the frame area including the open area provided by the polygonal opening is between 75.0% and 95.0%. An electrode characterized by the following features.

25. A method for manufacturing a Tyndale-Powell ion gate for an ion mobility spectrometer, The aforementioned method, The first electrode and the second electrode are mechanically fixed to each other so as to provide a gap between them. Includes, The first electrode and the second electrode are formed by electrodeposition. A method characterized by the following:

26. Mechanically fixing the first electrode and the second electrode to each other so as to provide a gap between them is The first set of holder positioning mechanisms is engaged with the corresponding frame positioning mechanism of the frame of the first electrode, The second set of holder positioning mechanisms is engaged with the corresponding frame positioning mechanism of the frame of the second electrode, including, The method according to claim 25.

27. A method for manufacturing electrodes for Tyndale-Powell ion gates, The electrode is A conductive structure having a hexagonal lattice, The frame surrounding the hexagonal grid, Equipped with, The hexagonal grid is planar and composed of conductive struts. The frame is configured to provide additional support to the hexagonal grid, The aforementioned frame is A plurality of frame positioning mechanisms configured to engage with each of the plurality of holder positioning mechanisms in the holder that holds the electrode, Equipped with, The aforementioned method, Arranging frame positioning mechanisms around the frame to provide multiple frame positioning mechanisms, Includes, The average horizontal position and / or average vertical position of the plurality of frame positioning mechanisms are arranged at a distance less than a predetermined distance from the center of the hexagonal grid. The predetermined distance is based on the width of the conductive strut in a direction parallel to the hexagonal grid. A method characterized by the following:

28. The two electrodes are manufactured according to claim 27. A method for producing a Tyndale-Powell ion gate according to any one of claims 25 to 26.

29. The first electrode and the second electrode are formed by electrodeposition. including, The method according to any one of claims 25 to 28.

30. The first electrode and the second electrode are aligned such that the difference in alignment between the conductive element of the first electrode and the conductive element of the second electrode is less than the width of the conductive element in a direction parallel to the conductive structure. The method according to any one of claims 25 to 29.

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