Ceramic cooling base

Abstract

A substrate support and related components, including an additive manufacturing process, are disclosed. One substrate support assembly includes an electrostatic chuck and a cooling base having a first surface bonded to a first surface of the electrostatic chuck by a metal bonding material. The cooling base comprises a ceramic body having substantially the same coefficient of thermal expansion as the electrostatic chuck, one or more cooling channels formed within the ceramic body, and one or more conductive regions extending through the ceramic body from the first surface to a second surface opposite the cooling base.

Description

Background

[0001] This specification relates to semiconductor systems, processes, and apparatus. Semiconductor manufacturing involves performing various processes on a substrate. These processes are executed within one or more processing chambers. For example, when a deposition process is executed, films of various materials are deposited on the substrate. In another example, in plasma etching in semiconductor processes, one or more layers can be selectively etched using plasma generated from a specific etching gas chemistry. As the miniaturization of integrated circuits progresses and the aspect ratio of fine features increases, the need for accuracy in executing processes on a substrate is increasing. Summary

[0002] This specification describes techniques related to substrate supports and related components. These techniques generally involve using additive manufacturing techniques to design and manufacture substrate supports and their components used within a substrate processing chamber. Specifically, the cooling base of the substrate support can be formed of the same material as the substrate support body (e.g., an electrostatic chuck). For example, both can be formed of ceramic materials such as aluminum oxide (Al2O3) or aluminum nitride (AlN). By using the same material, the coefficient of thermal expansion (CTE) between the two components of the substrate support becomes common. Further, the two common materials can be joined using a metal bond such as aluminum, for example, enabling application to substrate processing at low temperatures.

[0003] The cooling base can be formed using an additive manufacturing method and includes various fluid paths configured to form a closed loop for a fluid circulating within the cooling base, embedded heat brake structures, and conductive regions. Further, the additive manufacturing method can optionally form a cooling base in which lift pin guides are incorporated into the structure of the cooling base.

[0004] In this specification, “substrate” means a wafer or other carrier structure (e.g., a glass plate). A wafer may include a semiconductor material (e.g., silicon, GaAs, InP) or other semiconductor-based wafer material. A wafer may also include an insulating material (e.g., silicon-on-insulator (SOI), diamond, etc.). Optionally, the substrate includes a film formed on the surface of the wafer / carrier structure. The film may be, for example, a dielectric, a conductor, or an insulating film. The film can be formed on the wafer surface using various deposition techniques, e.g., spin coating, atomic layer deposition (ALD), chemical vapor deposition (CVD), metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or other similar techniques for forming thin film layers on a wafer or other carrier structure. In some embodiments, the manufacturing tool described herein is a plasma-based etching tool that can perform an etching process on the surface of the wafer / carrier structure and / or on layers formed on the wafer.

[0005] In general, one innovative embodiment of the subject matter described herein can be embodied by an electrostatic chuck and a cooling base having a first surface bonded to a first surface of the electrostatic chuck by a metallic bonding material. The cooling base comprises a ceramic body having substantially the same coefficient of thermal expansion as the electrostatic chuck, one or more cooling channels formed within the ceramic body, and one or more conductive regions extending through the ceramic body from the first surface to a second surface opposite the cooling base.

[0006] In general, one innovative aspect of the subject matter described herein can be embodied by a substrate support component of a substrate support materialized in a machine-readable medium for design, manufacture or design testing. The substrate support component includes a cooling base configured such that an insulator supports an electrostatic chuck on a first surface of the cooling base; one or more cooling channels embedded within the cooling base and configured to facilitate the flow of a coolant within the cooling base; one or more first gas conduits formed within the cooling base and configured to facilitate the flow of gas through the cooling base when the electrostatic chuck is supported by the first surface, and to connect to one or more second gas conduits of the electrostatic chuck; and one or more thermal separation structures integrally formed within the cooling base and oriented to control the overall thermal uniformity of the cooling base provided by the coolant flowing through one or more cooling channels.

[0007] In general, one innovative aspect of the subject matter described herein can be embodied by a method for manufacturing a substrate support. The method involves forming a plurality of layers by a multilayer manufacturing system, each layer comprising a ceramic body, one or more cooling channels formed within the ceramic body and configured to circulate a coolant, one or more gas conduits formed within the ceramic body and configured to pass a gas through the ceramic body, and one or more conductive regions formed within the ceramic body and extending from a first surface of the substrate support to a second opposite surface of the ceramic body.

[0008] The subject matter described herein can be implemented in these embodiments and other embodiments, and one or more of the following advantages can be achieved: By using additive manufacturing (AM) technology to manufacture substrate supports, challenges in the manufacturing of substrate supports and their components can be overcome, yield can be improved, complexity can be increased, and the possibilities of materials can be expanded. For example, by using AM, it becomes possible to introduce features (e.g., embedded sensors, complex internal channels / conduits, etc.) that could not be realized or were not feasible due to cost constraints with conventional non-AM technologies.

[0009] AM technology improves the control of the fidelity of manufactured parts (such as defect reduction), and can enhance the performance of manufactured parts by reducing helium leakage, improving capacitance, providing more precise (critical) dimensional control, and reducing machining cracks.

[0010] Furthermore, AM technology can also be used for the refurbishment / regrowth / modification of existing substrate supports, extending component life and reducing costs through reuse rather than complete component replacement. The refurbishment / modification process restores the functionality of the substrate support by targeting localized degradation, such as that caused by use in process environments or exposure to plasma and etching chemicals, enabling continued use and target performance. AM-based localized regrowth technology for refurbishment can reduce the cost, material consumption, and time required for refurbishment. Moreover, refurbishment / modification can be used to update existing components rather than manufacturing entirely new components to incorporate new functions.

[0011] By forming the cooling base from the same material as the electrostatic chuck (ESC), the mismatch in thermal expansion coefficient (CTE) is eliminated compared to using different materials (e.g., a metal cooling base and a ceramic ESC). In addition to eliminating the CTE mismatch, using the same ceramic material makes it possible to join the ESC and cooling base with a metal bond. Using a metal bond allows for lower operating temperatures in certain substrate processing steps compared to using other bonding materials such as elastomer bonds. For example, with a metal bond, processing is possible at temperatures as low as -150°C, whereas with an elastomer bond, it is only possible down to -90°C. Furthermore, elastomer bonds corrode over time, which can become a source of contamination in the processing chamber. Using a metal bond reduces this source of contamination. Additive manufacturing allows for the incorporation of lift pin guides with tighter tolerances, reducing the risk of sticking between the lift pins and lift pin guides. Additive manufacturing of the cooling base allows for the realization of various cooling channel shapes, enabling more precise control of heat distribution, for example, when applying cooling to the cooling base. The cooling base can include internal structures formed by additive manufacturing, achieving weight reduction while maintaining strength and thermal conductivity. As a result, the material cost of the cooling base can be reduced. Furthermore, additive manufacturing allows for smaller tolerances in structural formation. For example, additive manufacturing allows for the formation of cooling channels in close proximity to other internal structures, which is usually impossible with other manufacturing techniques.

[0012] The following disclosure specifies a particular process for an etching-based manufacturing tool using the disclosed technology, but it will be readily apparent that the system and method are equally applicable to a variety of other manufacturing tools and chambers. Therefore, this technology should not be construed as being limited solely to the etching manufacturing tools described. Before describing the operation of systems and methods, or exemplary process sequences, according to several embodiments of this technology, this disclosure describes one of the systems and chambers applicable to this technology. It should be understood that this technology is not limited to the described apparatus, and the described process can be implemented in any number of processing chambers and systems. [Brief explanation of the drawing]

[0013] [Figure 1] A schematic cross-sectional view of an example of a plasma processing chamber is shown. [Figure 2] A schematic cross-sectional view of an example of a support structure is shown. [Figure 3] A schematic cross-sectional view of an example of a cooling base and ESC is shown. [Figure 4] A schematic cross-sectional view of an example of a cooling base and ESC equipped with a mechanical thermal brake is shown. [Figure 5] A schematic cross-sectional view of an example of a cooling base and ESC equipped with a variable thermal brake is shown. [Figure 6A] ~ [Figure 6C] A schematic diagram of an exemplary cooling channel shape is shown. [Figure 7] Exemplary cooling base and other schematic cross-sectional views of the ESC are shown. [Figure 8] An example of a computer system is shown. [Figure 9] This is a flowchart illustrating an example of a process for manufacturing cooling bases in a layered fashion.

[0014] Similar reference numbers and designations in various drawings refer to the same elements. Detailed explanation

[0015] This specification provides improved methods and assemblies using additive manufacturing to manufacture substrate supports and / or components of substrate supports used in a substrate processing chamber. Embodiments of this disclosure include cooling base designs enabled by additive manufacturing that provide the ability to maintain bonding with other substrate support components without CTE misalignment even at low temperatures, and the ability to additively manufacture a cooling base with embedded features including fluid channels, conduction regions, thermal brake structures and lift pin guides.

[0016] Figure 1 is a schematic cross-sectional view of an example of a processing chamber 100. In this example, the processing chamber is an etching chamber (e.g., a plasma processing chamber) suitable for etching one or more material layers placed on a substrate 103 (e.g., also called a “wafer”) within the processing chamber 100. The processing chamber 100 is provided for illustrative purposes, and the substrate support, including the cooling base, can also be used for other types of processing chambers. The processing chamber 100 comprises a chamber body 105 that defines a chamber volume 101 capable of processing a substrate. The chamber body 105 has side walls 112 and a bottom 118, which are connected to ground 126. The side walls 112 may include liners 115 to protect the side walls 112 and extend the maintenance cycle interval of the plasma processing chamber 100. The chamber body 105 supports a chamber lid assembly 110 that surrounds the chamber volume 101. The chamber body 105 can be manufactured from, for example, aluminum or other suitable material. A substrate access port 113 is formed in the side wall 112 of the chamber body 105, allowing the substrate 103 to be easily moved in and out of the plasma processing chamber 100. The access port 113 can be connected to the transport chamber and / or other chambers (not shown) of the substrate processing system, for example, to perform other processing on the substrate. A pumping port 145 is formed in the bottom 118 of the chamber body 105, connected to the chamber volume 101. A pumping device can be connected to the chamber volume 101 via the pumping port 145 to reduce and control the pressure in the processing volume. The pumping device may include one or more pumps and a throttle valve.

[0017] The chamber volume 101 includes a processing area 107 (for example, a station for processing substrates). A substrate support 135 for supporting the substrate 103 during processing can be placed in the processing area 107 of the chamber volume 101. The substrate support 135 may include an electrostatic chuck 122 for holding the substrate 103 during processing, a cooling base 129, and other support components 131 as described later with reference to Figure 2.

[0018] The electrostatic chuck (ESC) 122 can hold the substrate 103 to the substrate support 135 using electrostatic attraction. The ESC 122 can be driven by an RF or DC power supply 125 integrated with a matching circuit 124. The ESC 122 may include electrodes 121 embedded in a dielectric. The electrodes 121 are connected to the RF or DC power supply 125 and can provide a bias to attract plasma ions generated from the processing gas in the chamber volume 101 to the ESC 122 and the substrate 103 placed on the pedestal. The RF or DC power supply 125 can repeatedly turn on and off or generate pulses during processing of the substrate 103. The substrate support 135 includes an isolator 128, which makes the sidewalls of the ESC 122 less attractive to the plasma and can extend the maintenance life of the ESC 122. Furthermore, the substrate support 135 includes a cathode liner 136, which protects the sidewalls of the substrate support 135 from the plasma and can extend the maintenance interval of the plasma processing chamber 100.

[0019] Electrode 121 can be coupled to a DC power supply 150. The power supply 150 can supply a chucking voltage to electrode 121 ranging from approximately 5000 volts to approximately -5000 volts. The power supply 150 may also include a system controller that controls the operation of electrode 121 by supplying DC current to electrode 121 for chucking and dechucking the substrate 103. ESC 122 may include a heater placed within the ceramic and connected to a power supply for heating the substrate. Meanwhile, the cooling base 129 supporting ESC 122 may include conduits for circulating thermal conductive fluid to maintain the temperature of ESC 122 and the substrate 103 placed on top of it. ESC 122 may be configured to operate within a temperature range required by the thermal budget of the device being manufactured on the substrate 103. For example, ESC 122 may be configured to maintain the substrate 103 at a temperature ranging from approximately -150°C or below to approximately 500°C or above, depending on the process being performed. Covering 130 may be placed on ESC 122 and around the substrate support 135. The covering 130 can be configured to confine etching gas to a desired portion of the exposed upper surface of the substrate 103, while also shielding the upper surface of the substrate support 135 from the plasma environment within the plasma processing chamber 100.

[0020] Additional support components 131 of the substrate support 135 may include a grounding plate, an insulator, and an equipment plate. Figure 2, described later, is an example of a schematic diagram showing multiple components of the substrate support 135.

[0021] The substrate support may include lift pins (not shown) positioned in openings formed in the substrate support. The lift pins are coupled to an actuator and driven up and down by the actuator to position the substrate on the ESC. For example, a substrate that has entered the processing area from the substrate access port 113 can be positioned on the ESC 122.

[0022] Referring to FIG. 1, a gas panel 160 (e.g., also referred to herein as a “gas distribution manifold”) is connected to the chamber body 105 via the chamber lid assembly 110 by a gas line 167, and can supply a processing gas into the chamber volume 101. The gas panel 160 can include one or more processing gas sources 161, 162, 163, 164, and can further include an inert gas, a non-reactive gas, and a reactive gas so that it can be used in any number of suitable processes. Examples of processing gases that can be supplied by the gas panel 160 include, but are not limited to, hydrocarbon-containing gases including methane, sulfur hexafluoride, silicon chloride, silicon tetrachloride, carbon tetrafluoride, and hydrogen bromide. The processing gases that can be supplied by the gas panel can include, but are not limited to, argon gas, chlorine gas, nitrogen, helium, oxygen gas, sulfur dioxide, and any number of other substances. Further, the processing gas can include nitrogen, chlorine, fluorine, oxygen, or a hydrogen-containing gas (e.g., BCl3, C2F4, C4F8, C4F6, CHF3, CH2F2, CH3F, NF3, NH3, CO2, SO2, CO, N2, NO2, N2O, H2, etc.), and any number of suitable precursors. Processing gases from the processing gas sources (e.g., sources 161, 162, 163, 164) can be combined to form one or more etching gas mixtures. For example, the gas panel 160 includes one or more processing gas sources specific to oxide-based etching chemistries. In other examples, the gas panel 160 includes one or more processing gas sources specific to nitride-based etching chemistries.

[0023] The gas panel 160 includes various valves, pressure regulators (not shown), and mass flow controllers (not shown) positioned relative to gas sources 161, 162, 163, and 164 to control the flow rate of the process gas from the gas sources. Valve 166 can control the flow rate of the process gas from gas sources 161, 162, 163, and 164 of the gas panel 160. The operation of the valves, pressure regulators, and / or mass flow controllers can be controlled by controller 165. Controller 165 is operably connected to an electric valve (EV) manifold (not shown) and can control the operation of one or more of the valves, pressure regulators, and / or mass flow controllers. The lid assembly 110 may include a gas supply nozzle 114. The gas supply nozzle 114 may include one or more openings for introducing the process gas from gas sources 161, 162, 163, and 164 of the gas panel 160 into the chamber volume 101. After the process gas is introduced into the plasma processing chamber 100, energy can be supplied to the gas to form a plasma. An antenna 148 (e.g., one or more inductor coils) can be provided adjacent to the plasma processing chamber 100. The antenna power supply 142 supplies power to the antenna 148 via a matching circuit 141, inductively coupling energy such as RF or DC energy to the processing gas to maintain the plasma formed from the processing gas in the chamber volume 101 of the plasma processing chamber 100. Alternatively, or in addition to the antenna power supply 142, process electrodes on the underside and / or upper side of the substrate 103 can be used to capacitively couple RF or DC power to the processing gas to maintain the plasma in the chamber volume 101. The operation of the power supply 142 can be controlled by a controller such as a controller 165, which also controls the operation of other components in the plasma processing chamber 100.

[0024] Using the controller 165, control of the process sequence, adjustment of the gas flow rate from the gas panel 160 to the plasma processing chamber 100, and control of other process parameters can be performed. When a software routine is executed by a computing device having one or more processors (e.g., a central processing unit (CPU)) capable of data communication with one or more memory storage devices, the computing device is converted into a special-purpose computer such as a controller, and the plasma processing chamber 100 can be controlled so that the process is executed according to the present disclosure. Further, the software routine can be stored and / or executed by one or more other controllers that can be associated with the plasma processing chamber 100.

[0025] In some embodiments, the controller 165 communicates data with the characterization device 172. The characterization device 172 may include one or more sensors (e.g., image sensors) capable of collecting processing data related to the processing chamber 100. For example, the characterization device 172 may include an emission spectrometer configured to monitor signals (e.g., plasma emission) within the processing area of ​​the processing chamber 100. For example, the signal may be the dominant wavelength of the emitted light, i.e., the wavelength with the highest intensity. The characteristics of the emitted light from the plasma within the processing area (e.g., wavelength and intensity) may depend in part on the etching gas mixture used to generate the plasma and the layer composition of the layer being etched. For example, each etching gas mixture and the corresponding layer composition being etched may have its own unique signal signature. By monitoring the emission wavelengths inherent or characteristic of each etching gas mixture and the corresponding layer composition, the etching state of the layer being etched can be determined. For example, this is the remaining thickness of the layer being etched. The characteristics of the light emitted from the plasma may change based on the etching process, for example. For example, the intensity of the monitoring signal may change as material is removed from the layer being processed. The characterization device 172 can be configured to collect processing data including signals corresponding to the etching gas mixture used for wafer processing and signals corresponding to the corresponding layer composition of the structure processed in the processing chamber 100. The controller 165 can receive the processing data from the characterization device 172 and determine one or more actions to be taken based on that processing data.

[0026] In some embodiments, at the end of the wafer etching process, an automated or semi-automated robotic manipulator (not shown) can be used to transport the wafer from the substrate support out of the process chamber (e.g., via the substrate access port 113). For example, the robotic manipulator can transport the wafer to another chamber (or another location) to perform other steps of the manufacturing process.

[0027] In some embodiments, a controller of the manufacturing tool (e.g., controller 165) can execute a recipe that includes instructions for the manufacturing process. The recipe may include temperature control instructions that controller 165 can execute to control the operation of various temperature-related components of the manufacturing tool. For example, temperature-related components may include (A) the gas pressure introduced into each cooling region of the ESC, (B) the temperature setting of each of several heaters, each having a heating region within the ceramic body of the ESC, (C) the heater current setting of each of the micro-region heaters within the ceramic body of the ESC, (D) the flow rate of refrigerant to the cooling channels located at the base of the substrate support, or (E) any combination thereof. Furthermore, in addition to the operation of the ESC, the recipe instructions may also include executable instructions related to other process parameters for operating components of the manufacturing tool to control, for example, plasma power, etching gas flow rate, etc.

[0028] Figure 2 shows a schematic cross-sectional view of an example of the support structure 200. The support structure 200 includes a grounding plate 202, an insulator 204, an equipment plate 206, a cooling base 208, and an ESC 210.

[0029] The grounding plate 202 can be made of a conductive material (e.g., a metal such as aluminum) and can be configured to be bonded to the bottom of the processing chamber (e.g., the processing chamber 100 in Figure 1). The grounding plate 202 can be fixed to the processing chamber, and other components of the substrate support (e.g., the equipment plate 206 and the insulator 204) can also be fixed to the grounding plate.

[0030] The insulator 204 is formed from an insulating material (e.g., a polymer material). The insulating material may include, for example, polymers (cross-linked polystyrene), polytetrafluoroethylene (PTFE), polyamide-imide (PAI), polyetheretherketone (PEEK), polyetherimide, polyphenylene sulfide, or ceramics. In particular, the insulator 204 can be configured to reduce thermal and electrical interactions between the ESC 210 and the grounding plate 202. For example, the material of the insulator can be selected based on the operating temperature of the manufacturing process (e.g., a plasma etching process), electrical properties, and / or radical compatibility (e.g., compatibility with the plasma composition). Furthermore, the thickness of the insulator can be selected to reduce thermal and electrical interactions between the grounding plate and the equipment plate / cooling base.

[0031] The equipment plate 206 is coupled to the insulator 204 and provides pathways for connections to the cooling base 208 and ESC 210 (i.e., electrical, fluid, and gas connections). The equipment plate 206 can be formed from a metal such as aluminum or stainless steel.

[0032] The cooling base 208 is coupled to the equipment plate. The cooling base 208 includes a temperature control structure embedded inside to control the temperature of the ESC 210 when the ESC 210 is coupled to the cooling base 208. The temperature control structure may include cooling channels 212 for flowing a cooling fluid or, in the case of low-temperature applications, a refrigerant fluid (e.g., a specific refrigerant). The cooling channels 212 may be coupled to a heat exchanger (not shown) for controlling the temperature of the fluid. The heat exchanger may be, for example, a heat exchanger or a chiller (including a setpoint chiller). The temperature control structure may also include a gas conduit (not shown) for flowing a gas (e.g., helium, nitrogen, or other gas) through the cooling base 208 to the ESC 210. One or more seals may be placed around the cooling base to prevent the passage of fluid between the cooling base and the equipment plate.

[0033] The ESC210 is similar to the ESC122 described in Figure 1 and can hold the substrate to the substrate support 200 using electrostatic attraction. The ESC210 may include electrodes 214 embedded in a dielectric. The electrodes 214 can be connected to an RF power supply or a DC power supply and a bias can be applied to attract plasma ions generated from the processing gas in the chamber volume to the ESC210 and the substrate placed on the ESC210.

[0034] In some embodiments, the cooling base 208 is formed as a single structure by additive manufacturing using a ceramic material such as alumina (aluminum oxide, Al2O3). The cooling base 208 can be formed in a layer-by-layer process, during which structures such as temperature control structures and thermal brake structures are formed or embedded during the additive manufacturing process. This will be explained in more detail below.

[0035] Figure 3 shows a schematic cross-sectional view 300 of an example of a cooling base 302 and ESC 304. The cooling base 302 and ESC 304 are formed from materials having the same coefficient of thermal expansion (CTE). For example, they can be formed from the same material. In some embodiments, both the cooling base 302 and ESC 304 are formed from an insulating material such as ceramic. In particular, both the base 302 and ESC 304 can be formed from alumina. In other embodiments, different ceramic materials, such as yttria (yttria oxide Y2O3) or aluminum nitride (AlN), can be used.

[0036] By having a common coefficient of thermal expansion (CTE), the cooling base 302 and ESC304 can respond similarly to temperature changes. Therefore, there will be no discrepancies in the expansion or contraction of the components.

[0037] The cooling base 302 and ESC 304 are bonded together by a bonding layer 306. The bonding layer 306 can be formed from a metal such as aluminum. The metal bonding layer 306 allows for maintaining adhesive performance even at low temperatures, including temperatures lower than those generally usable with other adhesive materials such as elastomer adhesives. However, when using the metal bonding layer 306, it may be necessary to ensure that the coefficients of thermal expansion (CTE) of the cooling base 302 and ESC 304 are the same. This can be achieved by forming the cooling base 302 and ESC 304 from the same ceramic material.

[0038] The cooling base 302 has a substantially disc-shaped main portion, and its first surface is bonded to the corresponding surface of the ESC 304 via a bonding layer 306. The shape of the cooling base 302 matches the shape of the ESC 304, and the ESC 304 matches the shape of the substrate on which it is mounted. The ceramic material used to form the cooling base 302 can be selected based on suitability of strength, durability and thermal conductivity properties, in addition to being suitable for the ESC 304.

[0039] Furthermore, the cooling base 302 is configured to be attached to an equipment plate on a substantially circular second surface of the disc-shaped cooling base (not shown). The cooling base 302 includes anchors 308 for attaching the cooling base 302 to the equipment plate. In some embodiments, the anchors 308 have threads formed to receive fasteners or other screw-in mounting structures of the equipment plate. The anchors 308 can be formed by drilling holes in the ceramic cooling base 302 or by an additive manufacturing process that forms the anchor holes during manufacturing. In some embodiments, screw-in inserts, formed from, for example, plastic or metal material, are then added to the anchor holes to receive the mounting structure of the equipment plate. Four anchors 308 are shown in Figure 3, but the number of anchors 308 varies depending on the specific structural requirements and can be located in different places on the surface of the cooling base 302. In some embodiments, the threaded insert is formed of an insulating or dielectric material with an embedded helical coil for receiving the threaded mounting structure, providing a stronger attachment with less risk of damage than directly screwing the mounting structure into the ceramic material of the cooling base 302.

[0040] The cooling base 302 includes conduction paths 310a and 310b. Conduction paths 310a and 310b provide an electrical conduction path from the equipment plate to the ESC 304 via the cooling base 302. For example, conduction paths 310a and 310b can electrically connect one or more power sources to one or more electrodes in the ESC 304 body. In some embodiments, conduction paths 310a and 310b can be formed during the additive manufacturing of the cooling base 302. For example, electrical connections can be provided along the conduction paths passing through the cooling base 302 by forming specific regions of the cooling base 302 corresponding to the conduction paths using doped ceramics.

[0041] The cooling base 302 includes temperature control structures 312 and 314. The temperature control structure 312 provides one or more paths through the cooling base 302 to the ESC 304. For example, the temperature control structure 312 may include one or more gas conduits for flowing a gas (e.g., helium) through the cooling base 302 to the ESC 304. The gas conduits may include multiple independent paths or one or more branched paths for supplying gas to the ESC 304. Multiple paths allow for more precise control of cooling by delivering a controlled amount of gas to different regions of the ESC 304. As shown in Figure 3, the temperature control structure 312 includes two branches for providing cooling to two separate regions of the ESC 304. The ESC 304 includes paths or other internal structures for distributing gas, for example, distributing gas to the space between one or more surfaces of the ESC 304 and the substrate to supply gas to the back surface of the wafer. The dashed lines simply indicate that the paths pass through the ESC 304 and do not show specific path shapes.

[0042] The temperature control structure 314 includes one or more cooling channels within the body of the cooling base 302. The cooling channels allow a specific coolant or refrigerant fluid to circulate within the body of the cooling base 302. The refrigerant is cooled to a predetermined temperature using a chiller (e.g., a cryogenic chiller) before entering the substrate support and the cooling base 302 from the inlet point 316. The refrigerant is a suitable fluid that can be cooled to a predetermined temperature (e.g., -120°C) by the chiller. By circulating the refrigerant through the cooling channel between the inlet point 316 and the outlet point 318, the cooling base, and consequently the adjacent ESC, can be maintained at a predetermined temperature. For example, the refrigerant can be circulated in a cooling loop (e.g., a vapor compression loop), in which the refrigerant is cooled as a liquid or vapor fluid before entering the cooling base. The inlet point 316 and the outlet point 318 are connected to a chiller, forming a refrigerant loop. The chiller can control both the temperature and flow rate of the refrigerant flowing into the cooling base. For example, the chiller can be configured to maintain the cryogenic temperature of the output refrigerant at at least -80°C.

[0043] The cooling channels may have different and variable cross-sectional shapes perpendicular to the cooling channel path. For example, the cooling channels may have circular, elliptical, or polygonal cross-sectional shapes. Furthermore, the cooling channels may have shapes in which the cross-sectional area increases or decreases depending on the location. For example, by reducing the cross-sectional area of ​​the cooling channel in a particular region, the velocity of the cooling fluid in that region can be increased, which affects the thermal conductivity (e.g., cooling of a localized part of the cooling base 302). In addition, the cooling channels may have various two-dimensional or three-dimensional shapes inside the body of the cooling base 302. Examples of cooling channel shapes within the cooling base 302 will be described later with reference to Figure 6.

[0044] The temperature control structures 312 and 314 can be formed by an additive manufacturing process that forms them in layers on the cooling base 302. By using additive manufacturing, pathways (e.g., cooling channels) can be formed within the cooling base body. These pathways have sealed side walls, reducing the risk of fluid leakage. These pathways can have inlet and outlet points on one or more surfaces of the cooling base. Furthermore, additive manufacturing makes it possible to form cooling channels with complex shapes within the cooling base 302 body.

[0045] The cooling base 302 also includes a lift pin guide 320. The lift pin guide 320 provides a guide path for each lift pin that passes through the cooling base 302. Although only one lift pin guide 320 is illustrated in Figure 3, the cooling base 302 may include multiple lift pin guides at specific locations within the body. For example, the cooling base 302 may have three lift pin guides, with each lift pin positioned at equal angles from the center (e.g., 120° intervals). The lift pins pass through the cooling base 302 and the ESC 304 (shown by dashed lines) to lift a wafer from the ESC 304, for example.

[0046] The lift pin guide 320 can be formed by additive manufacturing. The lift pin guide can be formed during the manufacturing of the cooling base 302, for example, by laminating layers that leave one or more openings for the lift pins. Manufacturing the lift pin guide using additive manufacturing allows for tighter tolerances and reduces sticking between the lift pins and the lift pin guide during operation. In another embodiment, the cooling base is formed without the lift pin guide by additive manufacturing, and then the lift pin guide 320 is added in a subsequent manufacturing step, for example, by drilling paths for the lift pins in the cooling base.

[0047] In some embodiments, as shown by the dashed region 324, a portion of the cooling base surrounding each lift pin guide extends beyond the substantially flat surface of the cooling base 302. In such embodiments, when the cooling base is mounted to the equipment plate, the lift pin guides can extend into the body of the equipment plate.

[0048] The cooling base may also include a feedthrough 322. The feedthrough 322 is an electrical feedthrough, such as a sensor, heater terminal lead, or chucking electrode contact, that passes through the cooling base 302.

[0049] Figure 4 shows a schematic cross-sectional view 400 of an example of a cooling base 402 and ESC304 equipped with a mechanical thermal brake 404. A thermal brake (also called a thermal isolator) is formed from a material having a specific thermal conductivity and promotes the diffusion of thermal energy in a particular direction or inhibits the diffusion of thermal energy in other directions. For example, a thermal brake may be formed from an insulator or dielectric material and inhibits the transfer of thermal energy through the insulating material.

[0050] In Figure 4, the mechanical thermal brake 404 is positioned parallel to the surface 406 of the cooling base 402 joined to the ESC 304, and is located between the surface 406 and the temperature control structure 314. The mechanical thermal brake 404 can be formed from a material with low thermal conductivity, such as graphite filaments or graphite nanotubes. Other materials with suitable thermal conductivity properties can also be used. In particular, in some embodiments, the material is one in which the thermal conductivity along one axis differs from that along other axes, for example, a material in which the thermal conductivity along the x and y axes is higher than that along the z axis, or a material in which the thermal conductivity along one or more axes perpendicular to other axes is low.

[0051] This allows the mechanical thermal brake 404 to help diffuse thermal energy for heating or cooling laterally across the entire cooling base 402. For example, the cooling fluid passing through the cooling channels of the temperature control structure 314 transfers thermal energy. The mechanical thermal brake ensures that heat conduction is uniform and that no temperature fluctuations occur within the cooling base 402 based on factors such as proximity to specific cooling channel paths. This contributes to the uniform cooling of the ESC 304.

[0052] The mechanical thermal brake 404 can be embedded within the body of the cooling base 402 during manufacturing. For example, when forming the cooling base 402 using additive manufacturing, the thermal brake can be printed as a layer. In other embodiments, the mechanical thermal brake can be placed on top of the printed layer of the cooling base, and then additional layers can be printed to embed the mechanical thermal brake 404 within the body of the cooling base 402. In some embodiments, the mechanical thermal brake is in the form of a thin sheet or mesh that substantially covers the surface of the cooling base layer, with additional ceramic layers of the cooling base following it. For example, in the case of a disc-shaped cooling base, the mechanical thermal brake can be a circular sheet having a diameter substantially equal to or slightly smaller than the diameter of the circular surface of the cooling base.

[0053] The mechanical thermal brake 404 can be oriented within the body of the cooling base 402 such that the material has good thermal conductivity laterally across the width of the disc-shaped cooling base 402, but low thermal conductivity in the vertical direction.

[0054] Furthermore, mechanical thermal brakes can be configured to provide isolation between different temperature regions. For example, different temperature regions can be established within the cooling base, from the ESC to the wafer. For instance, certain wafer processing steps may result in asymmetric temperature profiles across the entire wafer. For example, the temperature at the wafer edges may be lower than that at the center. By configuring the mechanical thermal brake to prevent crosstalk between temperature regions, temperature control of each region can be facilitated. In such implementations, the mechanical thermal brake may include additional vertical structures that define the temperature regions.

[0055] Figure 5 shows a schematic cross-sectional view 500 of an example of a cooling base 502 and ESC 304 equipped with a variable thermal brake 504. The variable thermal brake 504 is similar to the mechanical thermal brake 404 in Figure 4 and is positioned parallel to the surface 506 of the cooling base 502, which is bonded to the ESC 304, and is located between its surface 506 and the temperature control structure 314.

[0056] However, unlike providing a static mechanical thermal brake, the variable thermal brake 504 is formed from fluid paths configured to hold a fluid (liquid or gas, e.g., helium or argon gas) having specific thermal conductivity characteristics. Furthermore, by providing separate fluid paths, different thermal brake regions can be formed, from which the fluid flow rate and / or pressure can be controlled individually. In the example shown in Figure 5, there are five separate thermal brake paths, each provided with a fluid input 508. Thus, for example, by supplying different amounts of helium to each path, the ESC 304 can receive different amounts of cooling from the cooling plate 502. By using different amounts of fluid in each thermal brake path, for example, the thermal conductivity and temperature uniformity applied from the cooling base 502 to the ESC 304 can be controlled more finely. This finer control allows for rapid and dynamic temperature adjustment as needed, based on the local temperature of the ESC 304.

[0057] The cooling channels within the cooling base can have various shapes. These shapes can include spiral, linear, and various other shapes. Because they are formed by additive manufacturing, they can accommodate complex shapes, and because the cooling channels can be formed in close proximity to other internal structures, tolerances between structures within the cooling base can be kept small.

[0058] Figures 6A-C show simplified examples of the cooling channel shape. Figure 6A shows a schematic diagram 600 of an exemplary cooling base 602. The exemplary cooling base 602 has a helical cooling channel shape 602. In the case of a disc-shaped cooling base 602, the helical cooling channel shape 602 is shown in a cross-sectional view passing through the circular side surface of the disc shape.

[0059] The inlet for the refrigerant or coolant is connected to the first end of the helical shape, and the outlet for the refrigerant is connected to the second end of the helical shape. The refrigerant or coolant circulates through the path of the helical cooling channel shape 602, cooling the cooling base 602 and adjacent ESCs bonded to the surface of the cooling base 602.

[0060] Figure 6B shows a schematic diagram 601 of an exemplary cooling base 603. The exemplary cooling base 603 includes a linear cooling channel shape 605. In the case of a disc-shaped cooling base 603, the linear cooling channel shape 605 is shown from a cross-section passing through the circumferential surface of the disc. In particular, the linear cooling channel shape 605 includes multiple linear segments along a path traversing the cooling base 603.

[0061] The refrigerant or coolant inlet is connected to the first linear end, and the refrigerant outlet is connected to the second linear end. The refrigerant or coolant circulates through the linear cooling channel 605, cooling the cooling base 603 and adjacent ESCs bonded to the surface of the cooling base 603.

[0062] Figure 6C shows a schematic diagram 607 of an exemplary cooling base 608. The exemplary cooling base 608 includes a recursive loop channel shape 610. In the case of a disk-shaped cooling base 608, the recursive loop channel shape 610 is shown in a cross-sectional view through the circular side of the disk shape.

[0063] The refrigerant or coolant inlet 612 is connected to the first end of the recurring loop channel, and the refrigerant or coolant outlet 614 is connected to the second end of the recurring loop channel. The refrigerant or coolant circulates through the path of the recurring loop channel shape 610, providing cooling. The recurring loop channel shape 610 helps reduce localized temperature differences (e.g., cold spots) transmitted within the cooling base 608 and, consequently, to the ESC and wafer.

[0064] Figure 7 shows another schematic cross-sectional view 700 of an exemplary cooling base 702 and ESC 304. The cooling base 702 is joined to the ESC 304 by a metal joint 306, as described above with respect to Figure 3. Furthermore, the cooling base 702 includes features similar to those in Figure 3, including a lift pin guide 320, conduction paths 310a, 310b, and a temperature control structure 312.

[0065] The temperature control structure 704 provides a cooling channel within the body of the cooling base 702. The cooling channel allows a specific refrigerant or cooling fluid to circulate within the body of the cooling base 702. In particular, the cooling channel 704 is formed from adjacent inlet and outlet paths, and the refrigerant circulates from the inlet point 706 through the cooling channel to the outlet point 708 adjacent to the inlet point 706. For example, the cooling channel can be formed as a triangular cross-sectional path stacked to form a rectangle. The input refrigerant flows through the “upper” cooling channel 710, which has a large surface area facing the ESC 304. This allows the refrigerant to more efficiently transfer cooling to the ESC 304 while it is at its lowest temperature and return to the “lower” channel 712, which has a large surface area on the opposite side of the ESC 304.

[0066] Additive manufacturing

[0067] In some embodiments, the design of the substrate support can be selected to improve substrate processing, which involves adapting various design parameters of the substrate support. The relationships between various design parameters in the design of the substrate support can be complex, and one design parameter may affect one or more other design parameters. By adapting various design parameters to the design, unique solutions for the substrate support can be obtained to improve process uniformity (e.g., temperature uniformity) during the manufacturing process. Furthermore, as will be explained in more detail below, the use of additive manufacturing technology, either in place of or in addition to conventional non-additive manufacturing technology, can expand the range of manufacturable designs.

[0068] In some embodiments, additive manufacturing (e.g., 3D printing) processes can be used to expand the design space of the cooling base. As shown in Figures 3–7, various subcomponents of the cooling base can be realized by additive manufacturing techniques, one or more of which may not be possible with conventional manufacturing techniques.

[0069] For example, the cooling base can be manufactured by forming a layer of the same ceramic material used to form the ESC. Using the same material results in a common coefficient of thermal expansion (CTE), making it possible to use a metal joint between the cooling base and the ESC. Using a metal joint between the cooling base and the ESC allows for substrate processing at lower temperatures than with an elastomer joint.

[0070] A cooling base may include internal geometries, such as a 3D-printed grid-like filling pattern, rather than being a solid structure, provided the grid structure possesses specific thermal properties and structural strength. Exemplary filling shapes include honeycomb, crossbeam, and gyroid structures. The use of filling patterns can reduce material costs while maintaining the necessary functionality of the cooling base.

[0071] The cooling base may include internal features (e.g., cooling channels, gas conduits, isolation features, electrical connections, etc.) formed by, for example, an additive manufacturing process, without requiring welding / brazing steps. Using additive manufacturing technology allows for finer control over the shape of the cooling channels and gas conduits (including path shape and cross-sectional shape, including variations in the shape and diameter of the cooling paths). Forming paths with sealed side walls within the body of the cooling base using additive manufacturing reduces leakage and failure within the cooling base. Furthermore, forming cooling paths and gas conduits within the body of the cooling base using additive manufacturing can improve thermal conductivity between the fluid passing through the cooling paths and the body of the cooling base.

[0072] Isolation features, such as thermal brakes, can be formed or embedded during the additive manufacturing process. For example, material for a mechanical thermal brake, as shown in Figure 4, can be deposited on top of the additive manufacturing layer, and additional layers can be printed on top of it. As another example, gas channels for a variable thermal brake, including one or more regions, can be formed during the additive manufacturing process, as shown in Figure 5.

[0073] In additive manufacturing processes, conductive pathways can be formed by doping a portion of the layer being formed with a conductive material. Forming conductive pathways during additive manufacturing eliminates the need for additional steps to add conductive material to the manufactured cooling base, enabling tighter tolerances and avoiding gaps and other defects that could impair the performance of the cooling base and the entire substrate support structure.

[0074] Furthermore, in some embodiments, a lift pin guide is formed within the body of the cooling base during additive manufacturing. The lift pin guide formed during additive manufacturing can have tighter tolerances and can reduce the possibility of the lift pin and lift pin guide becoming stuck during operation.

[0075] In some embodiments, the substrate supports and components described herein can be manufactured (or fabricated) using additive manufacturing (e.g., 3D printing). In one embodiment, a computer-aided design (CAD) model of the required part is first created, and then the information for each layer is mapped using a slicing algorithm. Each layer begins with a thin distribution of powder on the surface of a powder bed. Next, a selected binder material selectively binds the particles where the object is to be formed. Then, a piston supporting the powder bed and the part being formed descends, forming the next powder layer. The same process is repeated for each layer, and finally, a final heat treatment is performed to fabricate the object. Because 3D printing allows for localized control of material composition, microstructure, and surface texture, this method can be used to realize a variety of (and previously impossible) shapes.

[0076] In one embodiment, the substrate support and components of the substrate support (e.g., a cooling base) described herein can be represented in a data-readable structure by a computer rendering apparatus or a computer display apparatus.

[0077] Figure 8 is a schematic diagram of a computer system equipped with a computer-readable medium according to one embodiment. The computer-readable medium may include a data structure representing a cooling base. The data structure may be a computer file and may include information about the structure, material, texture, physical properties, or other properties of one or more articles. The data structure may also include code such as computer executable code or device control code that executes selected functions of a computer rendering device or computer display device. The data structure can be stored in the computer-readable medium. The computer-readable medium may include a physical storage medium such as a magnetic memory, floppy disk, or any available physical storage medium. The physical storage medium is readable by the computer system and can render the articles represented by the data structure on a computer screen or on a physical rendering device such as an additive manufacturing device such as a 3D printer.

[0078] In some embodiments, additive manufacturing technology can be used in combination with other manufacturing technologies (e.g., decremental manufacturing technology). For example, a portion of the cooling base can be modified / removed using decremental manufacturing technology, and a portion of the cooling base can be added / modified using additive manufacturing technology. These combinations of technologies can be used in the initial process to repair damage or change the configuration of feature portions by manufacturing or modifying / refurbishing / regenerating components of an existing cooling base or substrate support.

[0079] In some embodiments, additive manufacturing techniques can be used to regrow / repair a portion of the cooling base to, for example, repair operational or manufacturing damage and / or add features.

[0080] In some embodiments, the additive manufacturing technique includes ceramic-based additive manufacturing, in which a slurry containing ceramic powder is formed using a binder, such as a polymer binder, and this slurry may contain a photosensitizer that is photosensitive to light of a specific wavelength (e.g., photocurable). For example, a ceramic substrate can be formed using a photopolymerization technique using ultraviolet (UV) light, and then a ceramic component can be formed from this substrate using a sintering process.

[0081] In some embodiments, the additive manufacturing technique may include a coating process in which layers of the object are formed layer by layer using coating techniques such as plasma spray coating or screen printing. Plasma spray coating can be used to coat exposed surfaces with powder (e.g., ceramic powder, metal powder, or a combination of ceramic and metal powder). Screen printing can be used to form metal-based electrodes, such as those described herein.

[0082] In some embodiments, a sintering (e.g., firing) process can be used to solidify the ceramic powder / particles of an unfired ceramic component (e.g., to remove porosity and densify the ceramic material). For example, the sintering process can be carried out at a high temperature below the melting point of the ceramic material, where the material of individual particles diffuses toward adjacent powder particles to form a dense ceramic body. In some embodiments, the sintering process includes a preheating process to remove organic materials (e.g., polymers, lubricants, binders, etc.). In some embodiments, the sintering process includes a cooling process to cool the ceramic component to reduce crack / stress formation.

[0083] In some embodiments, a rapid sintering process (e.g., a flash sintering process) can be performed on a set of green ceramic layers of a green ceramic body. For example, the sintering process and the molding / additive manufacturing process can be performed alternately, in which case a predetermined number of layers are formed by additive manufacturing, followed by continuous sintering, and then another set of layers is formed on the exposed surface of the body by additive manufacturing. That is, by forming each part of the ceramic body in a green state and continuously sintering it, a densified ceramic body is obtained as the final result of this process.

[0084] In some embodiments, the refurbished part can be densified by the regrowth layer of the refurbishment process and sintered to match, for example, the properties of the original part.

[0085] Figure 9 is a flowchart of an exemplary process 900 for manufacturing substrate support components for substrate processing, particularly a cooling base. For convenience, process 900 is described in relation to an additive manufacturing system that performs at least some of the steps of the process.

[0086] The additive manufacturing system forms a plurality of layers, each containing a ceramic body having a first surface (902). The additive manufacturing system can receive a data structure representing a cooling base from a computer system and use that data structure to form a plurality of layers of the cooling base. The step of forming a plurality of layers of the ceramic body may include the step of forming one or more filling structures (e.g., a grid) inside the ceramic body.

[0087] The additive manufacturing system forms multiple layers, each containing one or more cooling channels arranged according to a shape specified by a data structure (904).

[0088] The additive manufacturing system forms multiple layers, each containing one or more internal structures of a cooling base (906). The internal structures may include conduction paths, gas channels, lift-in guides, etc.

[0089] The additive manufacturing system forms multiple layers to form a thermal brake structure (908). Formation of the thermal brake structure may include forming one or more fluid conduits using the multiple layers. Formation of the thermal brake structure may also include embedding other materials within the multiple layers. This embedding may include, for example, depositing or placing a material such as graphite at a specific location on any of the multiple layers, and then forming an additional layer on top of that material.

[0090] Figure 8 is a block diagram showing an example of a computer system 800 that can be used to perform the operations described above. For example, operations performed by an additive manufacturing system. The system 800 includes a processor 810, memory 820, storage device 830, and input / output device 840. Each component 810, 820, 830, and 840 can be interconnected using, for example, a system bus 850. The processor 810 can process instructions executed within the system 800. In one embodiment, the processor 810 is a single-threaded processor. In other embodiments, the processor 810 is a multi-threaded processor. The processor 810 can process instructions stored in memory 820 or storage device 830.

[0091] Memory 820 stores information within the system 800. In one embodiment, memory 820 is a computer-readable medium. In one embodiment, memory 820 is a volatile memory unit. In other embodiments, memory 820 is a non-volatile memory unit.

[0092] The storage device 830 can provide high-capacity storage to the system 800. In one embodiment, the storage device 830 is a computer-readable medium. In various embodiments, the storage device 830 may include, for example, a hard disk device, an optical disk device, a storage device shared over a network by multiple computing devices (e.g., a cloud storage device), or other high-capacity storage devices.

[0093] The input / output device 840 provides input / output operations to the system 800. In one embodiment, the input / output device 840 may include one or more network interface devices (e.g., an Ethernet card), serial communication devices (e.g., an RS-232 port), and / or wireless interface devices (e.g., an 802.11 card). In other embodiments, the input / output device may include a driver device configured to receive input data and transmit output data to peripheral devices 860 (e.g., a keyboard, printer, and display device). However, other embodiments such as mobile computing devices, mobile communication devices, and set-top box television client devices may also be used.

[0094] Figure 8 illustrates an example of a processing system, but the subject matter and functional operations described herein can be implemented in other types of digital electronic circuits, including the structures disclosed herein and their structural equivalents, or in computer software, firmware, or hardware, or a combination of one or more of these.

[0095] The subjects, operations, and behaviors described herein (e.g., computing devices such as controller 165 and processes performed by controller 165, such as switching control of etching gases in a plasma processing chamber, and control of cooling and heating processes) may be implemented in digital electronic circuits, materialized computer software or firmware, computer hardware including the structures described herein and their structural equivalents, or one or more combinations thereof. The subjects, operations, and behaviors described herein may be implemented as one or more computer programs (e.g., one or more computer program instruction modules encoded on a computer program carrier), or executed by a data processing device, or to control the operations of a data processing device. The carrier may be a tangible, non-temporary computer storage medium. Alternatively or additionally, the carrier may be an artificially generated propagating signal (e.g., a machine-generated electrical, optical, or electromagnetic signal) which is generated to encode information for transmission to a suitable receiving device for execution by a data processing device. The computer storage medium may be a machine-readable storage device, a machine-readable storage board, a random-access memory, or a serial-access memory, or one or more combinations thereof. The computer storage medium is not a propagating signal.

[0096] The term "data processing device" encompasses all types of devices, machines, and equipment that process data, including, for example, programmable processors, computers, or multiple processors or computers. A data processing device may include specialized logic circuits such as FPGAs (Field-Programmable Gate Arrays), ASICs (Application-Specific Integrated Circuits), and GPUs (Graphics Processing Units). In addition to hardware, the device may also include code that creates the execution environment for computer programs (e.g., code that constitutes processor firmware, protocol stacks, database management systems, operating systems, or one or more combinations thereof).

[0097] Computer programs can be written in any form of programming language, including compiled languages, interpreted languages, declarative languages, and procedural languages. They can also be deployed in any form, either as standalone programs (such as applications) or as modules, components, engines, subroutines, or other units suitable for execution in a computing environment. A computing environment can include one or more computers interconnected by a data communication network in one or more locations.

[0098] Computer programs can be associated with files in a file system, but this is not always necessary. A computer program can be stored in part of a file containing other programs or data (for example, one or more scripts stored in a markup language document), in a single file dedicated to that program, or in a series of interconnected files, such as files containing multiple modules, subprograms, or parts of code.

[0099] The processes and logic flows described herein can be executed by one or more computers running one or more computer programs, performing calculations based on input data, and generating outputs. Alternatively, these processes and logic flows can be executed by dedicated logic circuits such as FPGAs, ASICs, and GPUs, or by a combination of dedicated logic circuits and one or more programmed computers.

[0100] Computers suitable for running computer programs can be built on a general-purpose microprocessor, a dedicated microprocessor, or both, and other types of central processing units (CPUs). Generally, the CPU receives instructions and data from read-only memory, random-access memory, or both. The basic components of a computer are the CPU, which executes instructions, and one or more memory devices, which store instructions and data. The CPU and memory can be complemented by and integrated into dedicated logic circuits.

[0101] Generally, a computer is equipped with one or more mass storage devices, or is configured to be operationally connected to them and to send and receive data to and from them. Mass storage devices may be, for example, magnetic disks, magneto-optical disks, optical disks, or solid-state drives. However, a computer is not necessarily required to have these devices. Furthermore, a computer can also be incorporated into other devices such as mobile phones, personal digital assistants (PDAs), portable audio / video players, game consoles, Global Positioning System (GPS) receivers, or portable storage devices such as Universal Serial Bus (USB) flash drives.

[0102] To provide user interaction, the subject matter described herein can be implemented on one or more computers equipped with, or configured to communicate with, a display device for displaying information to the user (e.g., an LCD (liquid crystal display) monitor, a virtual reality (VR) display, or an augmented reality (AR) display) and an input device for the user to provide input to the computer (e.g., a keyboard, and a pointing device such as a mouse, trackball, or touchpad). Other types of devices can also be used to provide user interaction. For example, feedback and responses provided to the user can be any form of sensory feedback, such as visual, auditory, auditory, or tactile, and input from the user can be received in any form, including acoustic, auditory, or haptic input, including touch actions or gestures, motor actions or gestures, or directional actions or gestures. Furthermore, the computer can interact with the user by sending and receiving documents to and from the user's device. For example, this can be achieved by sending a web page to a web browser on the user's device in response to a request received from a web browser, or by interacting with an application running on the user's device, such as a smartphone or tablet. Furthermore, computers can interact with users by sending text messages and other types of messages to personal devices such as smartphones running messaging applications, and by receiving response messages from users.

[0103] In this specification, the term “configured” is used in relation to systems, devices, and computer program components. A system consisting of one or more computers is configured to perform a particular operation or action to mean that the system has software, firmware, hardware, or a combination thereof installed that performs the operation or action when in operation. One or more computer programs are configured to perform a particular operation or action to mean that one or more programs, when executed by a data processing device, contain instructions that cause the device to perform the operation or action. A dedicated logic circuit is configured to perform a particular operation or action to mean that the circuit comprises electronic logic that performs the operation or action.

[0104] This specification includes many specific details of implementation, but these should not be interpreted as limiting the scope of the claims (as defined by the claims themselves), but rather as descriptions of features specific to a particular embodiment of a particular invention. Certain features described herein in the context of separate embodiments may also be implemented in combination in a single embodiment. Conversely, various features described in the context of a single embodiment may also be implemented separately or in any suitable subcombination in multiple embodiments. Furthermore, even if features are described above as acting in a particular combination and are initially claimed as such, one or more features from the claimed combination may be removed from the combination, and the claims may cover a subcombination or a variation of a subcombination.

[0105] Similarly, if operations are described in a specific order in the drawings and claims, this should not be understood as requiring that such operations be performed in a specific illustrated order or sequence to obtain the desired result, or that all illustrated operations be performed. In certain circumstances, multitasking and parallel processing may be advantageous. Furthermore, the separation of various system modules and components in the above embodiments should not be understood as requiring such separation in all embodiments, and the described program components and systems can generally be integrated into a single software product or packaged into multiple software products.

[0106] Specific embodiments of the subject matter have been described. Other embodiments are also included within the scope of the following claims. For example, the operations described in the claims can be performed in a different order to obtain the desired results. As an example, the processes shown in the accompanying drawings do not necessarily require the specific illustrated order, i.e., a sequential order, to obtain the desired results. In some cases, multitasking and parallel processing may be advantageous.

Claims

1. A substrate support assembly, Electrostatic chuck and, A cooling base having a first surface bonded to the first surface of an electrostatic chuck by a metal bonding material, A ceramic body having substantially the same thermal expansion coefficient as an electrostatic chuck, One or more cooling channels formed within the ceramic body, A substrate support assembly comprising a cooling base having a conductive path extending through a ceramic body from a first surface to a second surface opposite the cooling base.

2. The substrate support assembly according to claim 1, comprising a mechanical thermal brake structure embedded in a ceramic body of a cooling base, the mechanical thermal brake structure configured to provide lateral temperature uniformity throughout the entire cooling base.

3. The substrate support assembly according to claim 1, comprising a plurality of fluid paths forming a variable thermal brake structure, each corresponding to a specific region, each region being individually controllable, and providing a specified degree of thermal isolation.

4. The substrate support assembly according to claim 1, wherein one or more cooling channels include a first cooling channel oriented to provide a first surface area directed toward a first surface of the cooling base, and a second cooling channel adjacent to the first cooling channel and located further from the first surface than the first cooling channel, wherein the inflow of refrigerant is provided to the first cooling channel and the outflow of refrigerant is provided from the second cooling channel.

5. The substrate support assembly according to claim 1, wherein multiple lift pin guides are incorporated into the ceramic body, extending through the ceramic body and configured to receive lift pins.

6. The substrate support assembly according to claim 1, wherein the cooling base comprises a lattice-filled region that defines the volume within the ceramic body.

7. A substrate support component of a substrate support materialized in a machine-readable medium for designing, manufacturing, or testing designs, A cooling base, configured to support an electrostatic chuck on a first surface, One or more cooling channels embedded within the cooling base and configured to facilitate the flow of refrigerant within the cooling base, One or more first gas conduits are formed within the cooling base and configured to facilitate the flow of gas through the cooling base and to connect to one or more second gas conduits of the electrostatic chuck when the electrostatic chuck is supported by the first surface, A substrate support component comprising one or more thermal isolation structures integrally formed within a cooling base and configured to control the overall thermal uniformity of the cooling base provided by a coolant flowing through one or more cooling channels.

8. A substrate support component embodied in a machine-readable medium according to claim 7, wherein one or more thermal separation structures comprises mechanical thermal barriers formed from materials having different thermal conductivity along at least two orthogonal axes.

9. A substrate support component embodied in a machine-readable medium according to claim 7, wherein one or more thermal separation structures comprises a plurality of independent fluid paths configured to receive a controlled amount of gas flow.

10. A substrate support component embodied in a machine-readable medium according to claim 7, wherein the first surface of the cooling base is configured to hold an electrostatic chuck, and the second opposite surface of the cooling base is configured to be fixed to the substrate support component.

11. A substrate support component embodied in a machine-readable medium according to claim 7, comprising one or more conduction paths extending from a first surface of the cooling base to a second opposite surface of the cooling base, each of which is formed by doping a conductive material into a material deposited within a specific region of each layer of the cooling base.

12. A substrate support component embodied in a machine-readable medium according to claim 7, wherein one or more thermal isolation structures are arranged relative to a cooling base to provide specific lateral temperature uniformity across the cooling base.

13. A substrate support component embodied in a machine-readable medium according to claim 7, which exists on a storage medium as a data format used for exchanging layout data.

14. A method for manufacturing a substrate support, The process includes forming multiple layers using a lamination manufacturing system, and the multiple layers are: Ceramic body and, One or more cooling channels formed within the ceramic body and configured to circulate a coolant, One or more gas conduits formed within a ceramic body and configured to allow gas to pass through the ceramic body, A method comprising one or more conduction paths formed within a ceramic body and extending from a first surface of a substrate support to a second opposite surface of the ceramic body.

15. The method according to claim 14, comprising the step of embedding a thermal insulating structure between multiple layers, wherein the thermal insulating structure includes a sheet of material that provides a mechanical thermal brake.

16. The method according to claim 15, wherein the material sheet is formed from a material different from the ceramic body and has different thermal properties along at least two different axes of the ceramic body.

17. Multiple layers, The method according to claim 14, comprising one or more fluid pathways formed within a ceramic body, configured to provide a variable thermal brake when a specific amount of fluid is supplied.

18. The method according to claim 14, wherein one or more conduction paths are formed by doping multiple layers within each region with a conductive material.

19. Multiple layers, The method according to claim 14, comprising one or more lift pin guides formed within a ceramic body, each of which provides a through hole extending from a first surface of a substrate support to a second opposite surface of the ceramic body.

20. Multiple layers, The method according to claim 14, wherein one or more regions of a ceramic body are formed as an internal lattice structure of the ceramic material.

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