System and method for loading a sample into a sample location

Abstract

The present invention provides a method for loading a sample into a sample position. This method includes loading a sample having an initial voltage onto a sample handler; ramping up the voltage of the sample from the initial voltage to a predetermined voltage while the sample is on the sample handler; and, once the sample reaches the predetermined voltage, moving the sample from the sample handler to a sample position in a sample holder, where the sample position in the sample holder is at the predetermined voltage; and processing the sample at the sample position.

Description

Technical Field

[0001] Cross-reference of related applications

[0001] This application claims the priority of European Application No. 23186798.7 filed on July 20, 2023, the entire disclosure of which is incorporated herein by reference.

[0002]

[0002] The embodiments described herein generally relate to a system and method for loading a sample to a sample position.

Background Art

[0003]

[0003] When manufacturing a semiconductor integrated circuit (IC) chip, during the manufacturing process, undesirable pattern defects inevitably occur on a substrate (i.e., a wafer) or a mask as a result of optical effects and incidental particles, etc., thereby causing a reduction in yield. Therefore, in the manufacture of IC chips, monitoring the degree of undesirable pattern defects is an important process. More generally, the evaluation (e.g., inspection and / or measurement) of the surface of a substrate or other object / material is an important process during and / or after its manufacture.

[0004]

[0004] Charged particle beam pattern evaluation systems are used for inspecting objects, such as detecting pattern defects or measuring structural features on such objects. These tools typically employ electron microscopy techniques using electron-optical systems, such as scanning electron microscopes (SEMs). In exemplary electron-optical systems such as SEMs, a primary electron beam consisting of relatively high-energy electrons is targeted in a final deceleration step so that it lands on the sample with a relatively low landing energy. The electron beam is focused onto the sample as a probing spot. Interactions between the material structure at the probing spot and the landing electrons from the electron beam cause electrons such as secondary electrons, backscattered electrons, or Auger electrons to be emitted from the surface. The generated secondary electrons may be emitted from the material structure of the sample. By scanning the surface of the sample or the entire surface with the primary electron beam as a probing spot, secondary electrons can be emitted across the surface of the sample. By collecting these secondary electrons emitted from the sample surface, the pattern evaluation system (or evaluation tool) can obtain an image representing the properties of the material structure on the surface of the sample. The intensity of the electron beam, including backscattered and secondary electrons, can vary based on the internal and external structural characteristics of the sample, and therefore may indicate whether or not the sample has defects.

[0005]

[0005] To enable faster sample processing, it is desirable to improve the throughput of evaluation systems, such as those used for inspection. In particular, there is a demand to increase throughput to, for example, one wafer per hour. One method to improve the throughput of an evaluation system is to reduce the time that a sample remains in the inspection position when it is not being inspected. For example, during inspection, a sample may be at a high voltage of approximately 10 to 45 kV. It is common for a sample to be placed in the inspection position while its voltage is being raised from the ground voltage to the above high voltage. This means that the sample is not being inspected while its voltage is being raised before inspection and while its voltage is being lowered after inspection. Therefore, the present invention aims to improve sample throughput by reducing the time that a sample is in the inspection position but is not being inspected. [Overview of the Initiative]

[0006]

[0006] The object of this disclosure is to provide embodiments of a system and method for loading a sample into a sample location.

[0007]

[0007] According to a first aspect of the present invention, a method is provided for loading a sample into a sample position. This method includes loading a sample having an initial voltage onto a sample handler; ramping up the voltage of the sample from the initial voltage to a predetermined voltage while the sample is on the sample handler; transferring the sample from the sample handler to a sample position in a sample holder, where the sample position in the sample holder is at the predetermined voltage; and processing the sample at the sample position.

[0008]

[0008] According to a second aspect of the present invention, a system for loading a sample into a sample position is provided. The system includes a sample holder configured to support a sample into a sample position; a sample processor configured to process a sample placed into a sample position; and a sample handler configured to hold a sample, move a sample to a sample position on the sample holder, and move a sample from a sample position on the sample holder. The system is configured to ramp up the voltage of a sample from an initial voltage to a predetermined voltage while the sample is on the sample handler, and / or ramp down the voltage of a sample from a predetermined voltage to an initial voltage while the sample is on the sample handler. [Brief explanation of the drawing]

[0009]

[0009] The above-described and other aspects of the present disclosure will become more apparent from the description of the exemplary embodiments in conjunction with the accompanying drawings.

[0010] [Figure 1]

[0010] This is a schematic diagram representing an exemplary electron beam evaluation apparatus. [Figure 2]

[0011] This is a schematic diagram representing an exemplary multi-beam charged particle evaluation system, which forms part of the exemplary electron beam evaluation apparatus shown in Figure 1. [Figure 3A]

[0012] This is a series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which a voltage is applied to the sample from the sample holder via capacitive coupling as the sample moves towards the sample holder along a path between two plates. [Figure 3B]

[0012] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which a voltage is applied to the sample from the sample holder by capacitive coupling as the sample moves towards the sample holder along a path between two plates. [Figure 3C]

[0012] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which a voltage is applied to the sample from the sample holder by capacitive coupling as the sample moves towards the sample holder along a path between two plates. [Figure 3D]

[0012] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which a voltage is applied to the sample from the sample holder by capacitive coupling as the sample moves towards the sample holder along a path between two plates. [Figure 3E]

[0012] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which a voltage is applied to the sample from the sample holder by capacitive coupling as the sample moves towards the sample holder along a path between two plates. [Figure 4A]

[0013] This is a series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which a voltage is applied to the sample from the sample holder via capacitive coupling as the sample, placed inside a conductive box, moves closer to the sample holder. [Figure 4B]

[0013] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which a voltage is applied to the sample from the sample holder by capacitive coupling as the sample, placed in a conductive box, moves toward the sample holder. [Figure 4C]

[0013] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which a voltage is applied to the sample from the sample holder by capacitive coupling as the sample, placed in a conductive box, moves toward the sample holder. [Figure 4D]

[0013] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which a voltage is applied to the sample from the sample holder by capacitive coupling as the sample, placed in a conductive box, moves toward the sample holder. [Figure 4E]

[0013] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which a voltage is applied to the sample from the sample holder by capacitive coupling as the sample, placed in a conductive box, moves toward the sample holder. [Figure 5A]

[0014] This is a series of schematic diagrams representing each step of the method for loading a sample into the sample position, in which the sample voltage is ramped up by applying a voltage to the sample handler. [Figure 5B]

[0014] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which the sample voltage is ramped up by applying a voltage to the sample handler. [Figure 5C]

[0014] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which the sample voltage is ramped up by applying a voltage to the sample handler. [Figure 5D]

[0014] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which the sample voltage is ramped up by applying a voltage to the sample handler. [Figure 5E]

[0014] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which the sample voltage is ramped up by applying a voltage to the sample handler. [Figure 6A]

[0015] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which the voltage of the sample is ramped up using a voltage control enclosure. [Figure 6B]

[0015] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which the voltage of the sample is ramped up using a voltage control enclosure. [Figure 6C]

[0015] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which the voltage of the sample is ramped up using a voltage control enclosure. [Figure 6D]

[0015] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which the voltage of the sample is ramped up using a voltage control enclosure. [Figure 6E]

[0015] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which the voltage of the sample is ramped up using a voltage control enclosure. [Figure 7A]

[0016] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which the voltage of the sample is ramped up using a voltage control tunnel. [Figure 7B]

[0016] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which the voltage of the sample is ramped up using a voltage control tunnel. [Figure 7C]

[0016] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which the voltage of the sample is ramped up using a voltage control tunnel. [Figure 7D]

[0016] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which the voltage of the sample is ramped up using a voltage control tunnel. [Figure 7E]

[0016] A series of schematic diagrams representing each step of a method for loading a sample into a sample position, in which the voltage of the sample is ramped up using a voltage-controlled tunnel.

[0011]

[0017] The schematic diagrams and drawings show the components described below. However, the components shown in the diagrams are not to scale. [Modes for carrying out the invention]

[0012]

[0018] The following description will refer in detail to exemplary embodiments, examples of which are shown in the accompanying drawings. The following description refers to the accompanying drawings, where, unless otherwise stated, the same numbers in different drawings represent the same or similar elements. The embodiments described below in the description of exemplary embodiments do not represent all embodiments conforming to the present invention. Rather, they are merely examples of apparatuses and methods conforming to some aspects relating to the present invention as described in the accompanying claims.

[0013]

[0019] Improving the computing power of electronic devices reduces their physical size, and this improvement in computing power can be achieved by significantly increasing the density of circuit components (e.g., transistors, capacitors, diodes, etc.) on an IC chip. This is made possible by improvements in resolution, which allows for the creation of even smaller structures. For example, an IC chip in a smartphone the size of a thumbnail, released in 2019 or earlier, could contain more than 2 billion transistors, each transistor being less than 1 / 1000th the size of a human hair. Therefore, the manufacturing of semiconductor ICs is a complex and time-consuming process involving numerous individual steps. An error in one of these steps can have a significant impact on the functionality of the final product. The goal of such a manufacturing process is to improve the overall yield. For example, to achieve a 75% yield in a process consisting of 50 steps (where a step represents the number of layers formed on the wafer), the yield of each individual step must exceed 99.4%. If the yield of each individual step is 95%, the overall yield of the process would be only about 7%.

[0014]

[0020] While high process yield is desirable in IC chip manufacturing facilities, maintaining high substrate (i.e., wafer) throughput, defined as the number of substrates processed per hour, is also essential. The presence of defects can affect both high process yield and high substrate throughput. This is especially true when operator intervention is required for defect inspection. Therefore, to maintain high yield and low costs, it is essential to detect and identify micro and nanoscale defects at high throughput using evaluation systems (e.g., scanning electron microscopes ("SEM") or those including them).

[0015]

[0021] A SEM comprises a scanning device and a detection device. The scanning device includes an illumination device containing an electron source for generating primary electrons and a projection device for scanning a sample, such as a substrate, with one or more focused primary electron beams. At least the illumination device or illumination system and the projection device or projection system together may be called an electron-optical system or electron-optical device. Primary electrons interact with the sample to generate secondary electrons. As the sample is scanned, the detection device captures the secondary electrons from the sample, allowing the SEM to create an image of the scanned area of ​​the sample. Such an evaluation device can utilize a single primary electron beam incident on the sample. For high-throughput inspection, some evaluation devices use multiple focused primary electron beams, i.e., multi-beams. Each beam constituting a multi-beam may be called a sub-beam or beamlet. In a multi-beam configuration, the sub-beams may be positioned relative to each other within the multi-beam. The multi-beam can scan different parts of the sample simultaneously. Therefore, a multi-beam evaluation device can evaluate, for example, inspect a sample much faster than a single-beam evaluation device.

[0016]

[0022] One embodiment of a known multi-beam evaluation apparatus and system is described below.

[0017]

[0023] The drawings are schematic. Therefore, the relative dimensions of the components in the drawings are exaggerated for clarity. In the following description of the drawings, identical or similar reference numerals refer to identical or similar components or entities, and only differences relating to individual embodiments are described. While the description and drawings relate to electro-optical systems, it should be understood that these embodiments are not intended to limit this disclosure to specific charged particles. Therefore, throughout this specification, references to electrons may be considered more generally to charged particles, and charged particles are not necessarily electrons.

[0018]

[0024] Refer to Figure 1 here. Figure 1 is a schematic diagram representing an exemplary charged particle beam evaluation apparatus 100. This evaluation apparatus constitutes part of an evaluation system, often a part of an evaluation system installed within a manufacturing facility. The evaluation apparatus may occupy a surface area of ​​the manufacturing facility floor, known as the apparatus occupancy area. Other parts of the evaluation system, such as vacuum and fluid supply service systems and remote processing racks, may be located elsewhere within the manufacturing facility, away from other manufacturing systems and equipment where space is not a critical requirement.

[0019]

[0025] The charged particle beam evaluation apparatus 100 shown in Figure 1 includes a main chamber 10, a load lock chamber 20, a charged particle evaluation system 40 (also called an electron beam system or tool), an instrument front-end module (EFEM) 30, and a controller 50. The charged particle evaluation system 40 is located within the main chamber 10.

[0020]

[0026] The EFEM30 includes a first load port 30a and a second load port 30b. The EFEM30 may include an additional (one or more) load port. The first load port 30a and the second load port 30b can receive, for example, a substrate FOUP (front opening unified pod) containing a substrate (e.g., a semiconductor substrate or a substrate made of other materials) or sample (hereinafter, substrates, wafers, and samples are collectively referred to as "samples") of the object to be evaluated (e.g., the object to be measured or inspected). One or more robotic arms (not shown) within the EFEM30 transport the sample to the load lock chamber 20.

[0021]

[0027] The load lock chamber 20 is used to remove gas from around the sample. This creates a vacuum, which is a local gas pressure lower than the ambient pressure. The load lock chamber 20 may be connected to a load lock vacuum pump system (not shown) that removes gas particles from within the load lock chamber 20. The operation of the load lock vacuum pump system allows the load lock chamber to reach a first pressure below atmospheric pressure. After reaching the first pressure, the sample is transported from the load lock chamber 20 to the main chamber 10 by one or more robotic arms (not shown). The main chamber 10 is connected to a main chamber vacuum pump system (not shown). The main chamber vacuum pump system removes gas particles from within the main chamber 10 so that the pressure around the sample reaches a second pressure lower than the first pressure. After reaching the second pressure, the sample is transported to a charged particle evaluation system 40, which can be evaluated by this system. The charged particle evaluation system 40 comprises a charged particle device 41. The charged particle device 41 may be an electro-optical device, which may be synonymous with an electro-optical system. The charged particle device 41 may be a multi-beam charged particle device 41 configured to project multiple beams toward the sample, for example, in a multi-beam configuration, multiple sub-beams may be arranged toward each other. Alternatively, the charged particle device 41 may be a single-beam charged particle device 41 configured to project a single beam toward the sample.

[0022]

[0028] The controller 50 is electronically connected to the charged particle evaluation system 40. The controller 50 may be a processor (such as a computer) configured to control the charged particle beam evaluation device 100. The controller 50 may include processing circuits configured to perform various signal and image processing functions. In Figure 1, the controller 50 is shown as being outside the structure including the main chamber 10, the load lock chamber 20, and the EFEM 30, but it is clear that the controller 50 may be part of such structure. The controller 50 may be located in one of the components of the charged particle beam evaluation device, or the controller 50 may be distributed among at least two components. It should be noted that while the main chamber 10 housing the electron beam evaluation device is illustrated in this disclosure, the embodiments of this disclosure are not limited in their broadest sense to a chamber housing an electron beam evaluation device. Rather, it is clear that the above principles can be applied to other tools and other device configurations operating under a second pressure.

[0023]

[0029] Refer to Figure 2. Figure 2 is a schematic diagram representing an exemplary charged particle evaluation system 40, which includes a multi-beam charged particle device 41, part of the exemplary charged particle beam evaluation apparatus 100 of Figure 1. The multi-beam charged particle device 41 comprises an electron source 201 and a projection device 230. The charged particle evaluation system 40 further comprises a drive stage 209 and a sample holder 207. The sample holder may have a holding surface (not shown) for supporting and holding a sample. Thus, the sample holder may be configured to support a sample. Such a holding surface may be an electrostatic clamp that can operate to hold a sample during the operation of the charged particle device 41, for example, during evaluation such as measurement or inspection of at least a portion of the sample. The holding surface may be recessed into the sample holder, for example, the surface of the sample holder may be oriented toward the charged particle device 41. The electron source 201 and the projection device 230 together may be referred to as the charged particle device 41. The sample holder 207 is supported by the drive stage 209 to hold a sample 208 for evaluation (e.g., a substrate or a mask). The multi-beam charged particle device 41 further comprises a detector 240 (e.g., an electron detection device).

[0024]

[0030] The electron source 201 may include a cathode (not shown) and an extractor or anode (not shown). During operation, the electron source 201 is configured to emit electrons as primary electrons from the cathode. The primary electrons are extracted or accelerated by the extractor and / or anode to form a primary electron beam 202.

[0025]

[0031] The projection device 230 is configured to convert the primary electron beam 202 into multiple sub-beams 211, 212, and 213, and to guide each sub-beam onto the sample 208. Three sub-beams are described for simplicity, but there may be tens, hundreds, or even thousands of sub-beams. Sub-beams are sometimes also called beamlets.

[0026]

[0032] The controller 50 can be connected to various parts of the charged particle beam evaluation apparatus 100 in Figure 1, such as the electron source 201, detector 240, projection device 230, and drive stage 209. The controller 50 can perform various image and signal processing functions. The controller 50 can also generate various control signals to control the operation of the charged particle beam evaluation apparatus, including a charged particle multibeam apparatus.

[0027]

[0033] The projection device 230 may be configured to focus sub-beams 211, 212, and 213 onto the sample 208 for evaluation, so that three probe spots 221, 222, and 223 can be formed on the surface of the sample 208. The projection device 230 may be configured to deflect the primary sub-beams to scan the probe spots 221, 222, and 223 across individual scanning areas in sections of the surface of the sample 208. When the primary sub-beams 211, 212, and 213 are incident on the probe spots 221, 222, and 223 on the sample 208, electrons, including secondary electrons and backscattered electrons, are generated from the sample 208 accordingly. The electron energy of the secondary electrons is typically 50 eV or less. The actual energy of secondary electrons may be less than 5 eV, but anything below 50 eV is generally treated as a secondary electron. The electron energy of the backscattered electrons is typically between the landing energy of the primary sub-beams 211, 212, and 213 and 0 eV. Electrons detected at energies below 50 eV are generally treated as secondary electrons, meaning that some of the actual backscattered electrons will be counted as secondary electrons.

[0028]

[0034] The detector 240 is configured to detect signal particles such as secondary electrons and / or backscattered electrons and generate a corresponding signal, which is sent to the signal processing system 280 to construct, for example, an image of the corresponding scanning area of ​​the sample 208. The detector 240 may be incorporated into the projection device 230.

[0029]

[0035] The signal processing system 280 may include circuitry (not shown) configured to process signals from the detector 240 to form an image. The signal processing system 280 may also be called an image processing system. The signal processing system may be incorporated into a component of the multibeam charged particle evaluation system 40, for example, the detector 240 (shown in Figure 2). However, the signal processing system 280 may be incorporated into a component of either the evaluation device 100 or the multibeam charged particle evaluation system 40, for example, as part of the projection device 230 or the controller 50. The signal processing system 280 may include an image acquirer (not shown) and a storage device (not shown). For example, the signal processing system may include a processor, computer, server, mainframe host, terminal, personal computer, any kind of mobile computing device, or a combination thereof. The image acquirer may include at least some of the processing functions of the controller. Therefore, the image acquirer may include at least one or more processors. The image acquirer may be communicatively coupled to the detector 240 and enable signal communication such as electrical conductors, fiber optic cables, portable storage media, infrared, Bluetooth, the internet, wireless networks, wireless communication, or a combination thereof. The image acquirer can receive signals from the detector 240, process the data contained in the signals, and construct an image from them. In this way, the image acquirer can acquire an image of sample 208. The image acquirer can also perform various post-processing functions, such as contour generation and overlaying indicators onto the acquired image. The image acquirer may be configured to adjust the brightness and contrast of the acquired image. Storage may be a storage medium such as a hard disk, flash drive, cloud storage, random access memory (RAM), or other types of computer-readable memory. Storage may be coupled to the image acquirer and can be used to store scanned raw image data as the original image and to store the post-processed image.

[0030]

[0036] The signal processing system 280 may include a measurement circuit (e.g., an analog-to-digital converter) for acquiring the distribution of detected secondary electrons. By using the electron distribution data collected during the detection time window in combination with the corresponding scan path data of each primary sub-beam 211, 212, and 213 incident on the sample surface, an image of the sample structure under evaluation can be reconstructed. Using the reconstructed image, various features of the internal or external structure of the sample 208 can be revealed. Therefore, the reconstructed image can be used to reveal any defects that may be present in the sample.

[0031]

[0037] The controller 50 can control the drive stage 209 to move the sample 208 during the evaluation (e.g., inspection) of the sample 208. The controller 50 can enable the drive stage 209 to move the sample 208 in one direction, preferably continuously, for example, at a constant speed, at least during the evaluation of the sample. The controller 50 can control the movement of the drive stage 209 to change the speed at which the sample 208 moves according to various parameters. For example, the controller 50 may control the stage speed (including its direction) according to the nature of the evaluation step in the scanning process.

[0032]

[0038] Known multi-beam systems such as the charged particle evaluation system 40 and the charged particle beam evaluation device 100 described above are disclosed in US2020118784, US20200203116, US2019 / 0259570, and US2019 / 0259564, which are incorporated herein by reference.

[0033]

[0039] As shown in Figure 2, in one embodiment, the charged particle evaluation system 40 has a single charged particle device 41 and optionally includes a projection assembly 60. The projection assembly 60 may be a module and may be called an ACC module. The projection assembly 60 is positioned to guide a light beam 62 so that this light beam 62 is incident between the charged particle device 41 and the sample 208.

[0034]

[0040] When the electron beam scans the sample 208, the high beam current can cause charge to accumulate on the sample 208, potentially affecting image quality. To adjust the charge accumulated on the sample, the projection assembly 60 is used to irradiate the sample 208 with a light beam 62, thereby controlling the charge accumulated due to effects such as photoconductivity, photoelectric effect, or thermal effect.

[0035]

[0041] To process samples more quickly, it is desirable to improve the throughput of evaluation systems, such as inspection evaluation systems. One way to improve the throughput of an evaluation system is to reduce the time that a sample remains in the inspection position when it is not being inspected. For example, during inspection, a sample can be at a high voltage of approximately 10-45kV. While the sample voltage is being raised from ground voltage to high voltage, the sample is typically placed in the inspection position, for example, on a sample stage. That is, the sample stage is occupied by the sample for a certain period while the sample voltage is ramping up from ground voltage to high voltage before inspection, and while the sample voltage is ramping down from high voltage to ground voltage after inspection. During these periods, which can be several tens of seconds per sample, the sample stage is not used for inspecting the sample. Therefore, throughput can be improved by partially or completely ramping up the sample voltage to high voltage before the sample is placed on the sample stage, and / or partially or completely ramping down the sample voltage to ground voltage after the sample is removed from the sample stage. Thus, by reducing the time required to ramp up or ramp down the sample voltage using the sample stage, the sample stage can be used more efficiently for testing, potentially improving sample throughput. Figures 3A–E illustrate the steps of loading a sample into the sample position. In particular, Figures 3A–E show an example of an apparatus for loading a sample into the sample position on a sample stage, which may be the sample stage 209 described above with reference to Figure 2. The term "ramp up" means increasing the magnitude of the voltage, and this ramp-up may be from the ground voltage to a larger negative voltage. Similarly, the term "ramp down" means decreasing the magnitude of the voltage.

[0036]

[0042] As shown in Figures 3A-E to 7A-E, the system comprises a sample holder 207 configured to support samples 208a and 208b at sample positions. The system may further include a sample processor configured to process samples 208a and 208b placed at sample positions. The system also comprises a sample handler 300 configured to hold samples 208a and 208b, move samples 208a and 208b to and from sample positions on the sample holder 207. The system is configured to ramp up the voltage of samples 208a and 208b from an initial voltage to a predetermined voltage while they are on the sample handler 300. The system may also be a charged particle system 40. The sample holder may be the sample holder 207 described above with reference to Figure 2. The sample holder 207 may be mounted on the drive stage 209 as described above with reference to Figure 2. Alternatively, the sample holder may be the stage.

[0037]

[0043] The sample processor may be a charged particle device 41, for example, the charged particle device 41 described above with reference to Figure 2. The sample processor is preferably configured to inspect samples 208a and 208b placed at the sample locations.

[0038]

[0044] The charged particle system may be controlled using a computer program. The computer program may include instructions configured to control the charged particle system. These instructions may include instructions configured to control the charged particle system to ramp up and / or ramp down the voltages of samples 208a and 208b, and to transfer the samples to and from the sample holder 207 using the sample handler 300.

[0039]

[0045] Figure 3A shows the loading of a sample 208a with an initial voltage onto the sample handler 300. Figure 3B shows the ramping up of the sample voltage from the initial voltage to a predetermined voltage. The ramping up in Figure 3B is performed while the sample 208a is on the sample handler 300. As shown in Figure 3C, when the sample 208a reaches the predetermined voltage, the sample 208a is moved from the sample handler 300 to the sample position of the sample holder 207. The sample holder may be the sample holder 207 described above with reference to Figure 2. The sample position of the sample holder is at the predetermined voltage. That is, the contact portion of the sample holder may be configured to contact the sample when the sample is on the sample holder, and it is desirable that the contact portion is at the predetermined voltage when the sample contacts this contact portion. Optionally, the entire sample holder may be at the same voltage as the sample position or contact portion of the sample holder.

[0040]

[0046] Optionally, the sample handler 300 carries sample 208a from a first enclosure 401 into which sample 208a is loaded to the sample handler 300, to a second enclosure 402 into which sample 208a is loaded to a sample holder 207. The second enclosure 402 may be a vacuum chamber. The first chamber 401 may be a load-lock chamber configured to function as an airlock between atmospheric conditions outside the first chamber 401 and the vacuum inside the second enclosure 402.

[0041]

[0047] As shown in Figure 3D, sample 208a may be left in the sample position and maintained at a predetermined voltage while sample 208a is processed at the sample position. In other words, if the sample position is on the sample stage 209 of the charged particle evaluation system 40, the sample may remain at the sample position at a predetermined voltage throughout the inspection of sample 208a. Preferably, the sample voltage is raised before the sample is placed in the sample position so that the sample position is not occupied by the sample while the sample voltage is raised / lowered relative to the ground voltage.

[0042]

[0048] For example, as shown in Figure 3D, sample 208b may be moved from the sample location to the sample handler 300 after processing. It is desirable to ramp down the voltage of sample 208b to the initial voltage while sample 208b is on the sample handler 300. For example, as shown in Figure 3E, sample 208b can be unloaded from the sample handler 300 once its voltage has ramped down to the initial voltage.

[0043]

[0049] In this approach, while the voltage of sample 208a is ramping up, the sample position may become available to be occupied by another sample 208b, if any. Thus, one sample 208b can be tested simultaneously while its voltage is being ramped up before testing the next sample 208a. Similarly, while the voltage of this other sample 208b is ramping down, the sample position may become available to be occupied by another sample 208a, if any. Thus, one sample 208a can be tested simultaneously while the voltage of the previous sample 208b is being lowered. Each sample 208a, 208b may be the sample 208 described above with reference to Figure 2.

[0044]

[0050] That is, as shown in Figure 3A, for example, this method may include the step of loading another sample 208a having an initial voltage onto the sample handler 300. As shown in Figure 3B, for example, the voltage of another sample 208a from the initial voltage to a predetermined voltage can be raised while the other sample 208a is on the sample handler 300 and sample 208b is being processed. In other words, the next sample may be on the sample handler while the previous sample is in the sample position, and the voltage of the next sample may be raised while the previous sample is in the sample position, and optionally while the previous sample is being processed (this processing may include inspection). Figure 3C shows the configuration at the point when another sample 208a has reached a predetermined voltage and sample 208b has been processed. In Figure 3C, sample 208b is moved from the sample position on the sample holder to the sample handler 300. Also, another sample 208a is moved from the sample handler 300 to the sample position on the sample holder. During this movement, the sample position on the sample holder is at a predetermined voltage. In other words, when a sample is brought into contact with the contact portion of the sample holder, the contact portion of the sample holder is at a predetermined voltage. When a sample is loaded onto the sample holder 300, it is desirable that the voltage of the sample be within a predetermined threshold range of the voltage at the sample position of the sample holder 300 or at its contact portion. As shown in the configuration of Figure 3E, another sample 208a may then be processed at the sample position while the voltage of sample 208b is optionally ramped down.

[0045]

[0051] Similar to Figures 3A-E, Figures 4A-E through 7A-E each show the steps of a method for loading a sample into a sample position. In particular, Figures 4A-E through 7A-E show the configuration of an apparatus for loading a sample into a sample position on a sample stage, which may be the sample stage 209 described above with reference to Figure 2. The above description of the configuration and method of Figures 3A-E also applies to the configuration and method of Figures 4A-E through 7A-E.

[0046]

[0052] The initial voltage should preferably be the ground voltage. This allows the sample handler to be at ground voltage when the sample is transferred to or from the sample handler. This simplifies the sample handler configuration because it does not need to be matched to the sample's ungrounded initial voltage. Alternatively, the initial voltage may be higher than the ground voltage. For example, the sample voltage may be raised to a higher voltage, such as the ungrounded voltage, before transferring the sample to the sample handler. This reduces the difference between the initial voltage and the predetermined voltage.

[0047]

[0053] The sample processing may be performed while the sample is at the desired voltage. The desired voltage may be 3kV or greater, preferably 5kV to 50kV, and more preferably 10kV to 45kV.

[0048]

[0054] This desired voltage is preferably equal to a predetermined voltage. This allows the desired voltage, at which the sample will be processed, to be reached before the sample is placed in the sample position. While this method is being performed, it is desirable that the sample position or contact portion of the sample holder be maintained at the desired voltage. For example, as shown in Figures 3-7, the power supply 101 may be configured to supply power to maintain the sample holder at the desired voltage. This is desirable because it results in a simple sample holder configuration that does not require complex voltage control. This is especially true when the sample holder is mounted on the drive stage 209, in order to keep the configuration simple.

[0049]

[0055] Alternatively, the predetermined voltage may be lower or higher than the desired voltage. In this configuration, after the sample is moved from the sample holder to the sample position, and before the sample is processed, the sample voltage is raised or lowered from the predetermined voltage to the desired voltage. For example, the sample holder may be configured to raise or lower the sample voltage from the predetermined voltage to the desired voltage before the sample is processed.

[0050]

[0056] In the configurations shown in Figures 3A-E, the sample handler 300 is electrically isolated. This ensures that the sample handler 300 does not directly alter the voltage of sample 208a. As shown in Figure 3B, while the voltage of sample 208a is ramped up, sample 208a and the sample handler 300 pass between two plates 411 and 412. That is, these plates 411 and 412 are positioned on either side of the path of the sample handler 300, so that one plate 411 is on the first side of the path and the other plate 412 is on the opposite side of the path. While the sample handler 300 passes between the two plates, one of the two plates 411 is given a higher voltage than the other 412. The two plates may extend from the sample holder 207 towards the path of the sample handler 300.

[0051]

[0057] Ramping up the voltage of sample 208a from an initial voltage to a predetermined voltage may involve moving sample 208a on the sample handler 300 between two plates 411, 412 so that it is closer to the sample holder 207. In this way, the sample holder 207 can apply voltage to sample 208a by capacitive coupling. That is, sample 208a can move between a low-voltage region further away from the sample holder 207 and a high-voltage region closer to the sample holder 207. The two plates 411, 412 may extend along the path of sample 208a between the low-voltage and high-voltage regions so that sample 208a remains between the two plates 411, 412 as it moves between the low-voltage and high-voltage regions. In other words, sample 208a can move between a low-voltage region, such as shown in Figure 3B, and a high-voltage region, such as shown in Figure 3C, in order to raise the voltage of sample 208a to a predetermined voltage.

[0052]

[0058] For example, as shown in Figures 3A-E, each plate 411, 412 may be provided on both the vertical sides of the path of the sample handler 300. That is, one plate 411 may be provided above the path of the sample handler 300 so that the sample 208a passes under the plate 411. The other plate 412 may be provided below the path of the sample handler 300 so that the sample 208a passes over this other plate 412. Alternatively, each plate 411, 412 may be provided on both the horizontal sides of the path of the sample handler 300.

[0053]

[0059] While the voltage of sample 208a is ramping up, the sample holder 207 may be maintained at a predetermined voltage. For example, power supply 101 may supply power to maintain the sample holder 207 at a predetermined voltage. This ensures that when sample 208a is moved to the sample holder 207, sample 208a and the sample holder 207 are at approximately the same voltage. Furthermore, the sample holder 207 may have a voltage sufficient to increase the magnitude of the sample voltage as sample 208a approaches the sample holder 207. For example, sample 208a may be moved from the first enclosure 401 to the second enclosure 402. Optionally, as shown in Figures 3A-E, plates 411, 412 may have multiple subplates separated by gaps. These gaps may be positioned to accommodate the wall 410 between the first enclosure 401 and the second enclosure 402. In other words, one or both of the two plates 411 and 412 may be provided as first subplates in the first enclosure 401, and one or both of the two plates 411 and 412 may be provided as second subplates in the second enclosure 402.

[0054]

[0060] Similarly, ramping down the voltage of sample 208b from a predetermined voltage to an initial voltage may involve moving sample 208b on the sample handler 300 between two plates 411, 412 so that it is further away from the sample holder. Sample 208b may be moved on the sample handler 300 from a position adjacent to the sample holder 207, as shown in Figure 3C, to a position further away from the sample holder 207, as shown in Figure 3D. For example, sample 208b may be moved from the second enclosure 402 to the first enclosure 401.

[0055]

[0061] In the configurations shown in Figures 4A-E, the sample handler is electrically isolated. This ensures that the sample handler 300 does not directly alter the voltage of sample 208a. While the voltage of sample 208a is ramping up, sample 208a and the sample handler 300 are placed inside a conductive box 420. The conductive box 420 is conductive. The conductive box 420 may be a sealed box or an open box. The conductive box 420 may include two plates, one on each side of the sample handler 300.

[0056]

[0062] In the configuration shown in Figure 4B, ramping up the voltage of sample 208a from an initial voltage to a predetermined voltage involves moving the conductive box 420 closer to the sample holder 207. The sample holder 207 applies voltage to the conductive box 420 by capacitive coupling. In this way, as the conductive box 420 moves closer to the sample holder 207, the voltage of the conductive box 420 increases. The conductive box 420 applies voltage to sample 208a by capacitive coupling. In this way, as the conductive box 420 containing sample 208a moves closer to the sample holder 207, the voltage of sample 208a increases. In other words, the conductive box 420 can move between a low-voltage region further away from the sample holder 207 and a high-voltage region closer to the sample holder 207. The conductive box 420 is preferably configured to reduce the potential difference across the sample 208a when one end of the sample 208a is closer to the low-voltage region and the other end of the sample 208a is closer to the high-voltage region.

[0057]

[0063] While the sample voltage is ramping up, it is desirable that the sample holder 207 be maintained at a predetermined voltage. For example, the power supply 101 may supply power to maintain the sample holder 207 at a predetermined voltage. This ensures that when sample 208a is moved to the sample holder 207, sample 208a and the sample holder 207 are at approximately the same voltage. Furthermore, the sample holder 207 may have a voltage sufficient to increase the magnitude of the voltage in the conductive box 420 as the conductive box 420 approaches the sample holder 207. For example, the conductive box 420 may be moved from the first enclosure 401 to the second enclosure 402.

[0058]

[0064] Similarly, ramping down the voltage of sample 208b from a predetermined voltage to an initial voltage may include moving the conductive box 420 further away from the sample holder 207 while sample 208b and the sample handler 300 are positioned inside the conductive box 420. Sample 208b may be moved on the sample handler 300 inside the conductive box 420 from a position adjacent to the sample holder 207, as shown in Figure 4C, to a position further away from the sample holder 207, as shown in Figure 4D.

[0059]

[0065] In the configurations shown in Figures 3A-E and 4A-E, it is desirable to use conductive capacitance to apply voltage to sample 208a, allowing sample 208a to reach a predetermined voltage without being directly connected to a power supply. The sample holder is likely to be part of the sample stage, which may have a power supply not only for voltage supply but also for driving purposes. Therefore, instead of providing an additional power supply, the power supply of the stage can be used efficiently. Furthermore, the operation of these components may be easier if there is no direct connection between either sample 208a or sample handler 300 and the power supply.

[0060]

[0066] In the configurations shown in Figures 5A to E, the sample handler 300 is connected to the power supply 102. The sample handler 300 may be configured to apply a voltage to the sample when the sample is loaded onto the sample handler. That is, the sample handler 300 may be conductive.

[0061]

[0067] The power supply 102 can be controlled to ramp up or ramp down the voltage of the sample handler 300 to a target voltage. The sample handler is electrically connected to the sample 208a, thereby configuring the sample handler 300 to apply the target voltage to the sample 208a.

[0062]

[0068] While ramping up the voltage of sample 208a, it is desirable that the target voltage be a predetermined voltage. This allows the sample handler 300 to raise the voltage of sample 208a to the predetermined voltage. It is preferable that the voltage of the sample handler 300 is equal to the voltage of sample 208a, or within a predetermined range of the voltage of sample 208a, when sample 208a is loaded onto the sample handler 300. The power supply 102 may be controlled to set the voltage of the sample handler 300 as an initial voltage immediately before loading sample 208a onto the sample handler 300.

[0063]

[0069] While ramping down the voltage of sample 208b, the target voltage should preferably be the initial voltage. The voltage of the sample handler 300 should preferably be equal to the voltage of sample 208a, or within a predetermined range of the voltage of sample 208a, when sample 208b is moved from the sample holder 207 to the sample handler 300 after processing of sample 208b. The power supply 102 may be controlled to set the voltage of the sample handler 300 to a predetermined voltage immediately before moving sample 208b from the sample holder 207 to the sample handler 300.

[0064]

[0070] This configuration allows the voltage of the sample handler 300, and consequently the voltage of sample 208a, to be controlled via the power supply 102. It is desirable that this configuration allows for more precise achievement of the selected voltage for sample 208a.

[0065]

[0071] In the configurations shown in Figures 6A-E and 7A-E, the sample handler 300 is placed inside voltage-controlled enclosures 430 and 440 while the voltage of sample 208a is ramped up. These voltage-controlled enclosures 430 and 440 are connected to the power supply 103. The voltage-controlled enclosures 430 and 440 are configured to apply voltage to sample 208a by capacitive coupling.

[0066]

[0072] The power supply 103 can control the voltage of the voltage-controlled enclosure to ramp up or ramp down to a target voltage.

[0067]

[0073] While ramping up the voltage of sample 208a, it is desirable that the target voltage be a predetermined voltage. This allows the voltage-controlled enclosures 430 and 440 to raise the voltage of sample 208a to the predetermined voltage. Power supply 103 may be controlled to set the voltages of the voltage-controlled enclosures 430 and 440 as initial voltages immediately before loading sample 208a onto the sample handler 300.

[0068]

[0074] While ramping down the voltage of sample 208b, the target voltage should preferably be the initial voltage. Power supply 103 may be controlled to set the voltages of voltage-controlled enclosures 430, 440 to a predetermined voltage just before transferring sample 208b from sample holder 207 onto sample handler 300.

[0069]

[0075] The voltage-controlled enclosure allows for relatively precise voltage setting, while also giving the sample handler relatively more freedom of movement between the position where the sample is loaded onto the sampler handler and the position where the sample is transferred to the sample holder.

[0070]

[0076] In the configurations shown in Figures 6A-E, the enclosure is a housing 430 configured to include samples 208a, 208b, and a sample handler 300. Preferably, the housing 430 also includes a sample holder 207.

[0071]

[0077] In the configurations shown in Figures 7A-E, the enclosure is a tunnel 440. The sample handler 300 is configured to move through the tunnel 440 as part of the path from the position where the sample 208a is loaded onto the sample handler 300, as shown in Figure 7A, to the sample position in the sample holder 207, as shown in Figure 7C. The tunnel 440 may include two plates, each positioned on either side of the sample handler 300.

[0072]

[0078] Loading sample 208a onto the sample handler is performed within the chamber, for example, within the first enclosure 401. After sample 208a is loaded onto the sample handler 300, the sample handler 300 can move from the first enclosure 401 to the tunnel 440. While sample 208a and sample handler 300 are in the tunnel 440, the power supply 103 may be controlled to set the tunnel 440 to a target voltage, which is preferably a predetermined voltage during the ramp-up. The sample handler 300 can move through the tunnel 440 as the voltage of sample 208a ramps up. Preferably, the sample handler 300 can pause in the tunnel 440 to give sample 208a time to reach the predetermined voltage. This eliminates the need for the tunnel 440 to be significantly longer than the length of sample 208a.

[0073]

[0079] After sample 208b has been processed and transferred from sample holder 207 to sample handler 300, sample handler 300 may move into tunnel 440. While sample 208b and sample handler 300 are in tunnel 440, power supply 103 may be controlled to set tunnel 440 to a target voltage, which is preferably the initial voltage during ramp-down. Sample handler 300 can move through tunnel 440 as the voltage of sample 208a ramps down. Preferably, sample handler 300 can pause in tunnel 440 to give sample 208a time to approach or reach the initial voltage. This eliminates the need for tunnel 440 to be significantly longer than the length of sample 208b. Thus, tunnel 440 can efficiently utilize limited space.

[0074]

[0080] The tunnel 440 may be located, for example, between the first enclosure 401 and the second enclosure 402. The tunnel 440 may be located in a vacuum environment. As shown in Figures 7A-E, it is preferable that both the tunnel 440 and the sample holder 207 be sealed within the second enclosure 402.

[0075]

[0081] References to one component, or a system consisting of multiple components or elements, that can be controlled to manipulate a charged particle beam in a particular manner include, in addition to a controller or control system or control unit controlling the component to manipulate the charged particle beam in the described manner, optionally, controlling the component using other controllers or devices (e.g., voltage sources and / or current sources) to manipulate the charged particle beam in that manner. For example, by electrically connecting a voltage source to one or more components (e.g., elements 300' of each component), it is possible to apply a potential to those components (e.g., control lens array 250, objective lens array 241, focusing lens 231, corrector, collimator element array and scan deflector array 260, etc., as non-limiting examples) under the control of the controller or control system or control unit. For drivable components such as stages, the component may be controlled to be driven and therefore moved relative to another component such as a beam path using one or more controllers, control systems or control units that control its drive.

[0076]

[0082] Embodiments described herein can take the form of a series of aperture arrays or electro-optical elements arranged in an array along a beam or multi-beam path. Such electro-optical elements may be electrostatic. In one embodiment, all electro-optical elements, e.g., from a beam-limiting aperture array to the final electro-optical element in the sub-beam path before the sample, may be electrostatic, and / or these electro-optical elements may be in the form of an aperture array or plate array. In some configurations, one or more electro-optical elements are manufactured as a micro-electromechanical system (MEMS) (i.e., using MEMS manufacturing techniques). For example, one or more features of an aperture array, plate electrodes such as an objective lens array, a detector array, a scan deflector array, and a collimator element array may be formed using MEMS manufacturing techniques.

[0077]

[0083] References to “upper” and “lower,” “up” and “down,” “above” and “below” should be understood as referring to directions parallel to the up-beam and down-beam directions (usually perpendicular, but not always) of the electron beam or multi-beam impacting sample 208. Therefore, references to up-beam and down-beam are intended to refer to directions related to the beam path, independent of the gravitational field present. These references are intended to coincide with the general direction from the electron beam source to the sample. However, these references to the beam path may correspond to references to the electron optical axis of device 41. In the case of a multi-device 41, the direction of the beam path of at least one of the sub-devices 42 (the reference sub-device) may correspond to the electron optical axis of the same sub-device 41. Other sub-devices of the multi-device 41 may be calibrated relative to the reference sub-device. The electron optical axis may correspond to the geometric axis of the reference sub-device, and in one embodiment, it may correspond to the geometric axis of the multi-device.

[0078]

[0084] An evaluation system according to one embodiment of this disclosure may be a tool for performing a qualitative evaluation of a sample (e.g., pass / fail), a tool for performing a quantitative measurement of a sample (e.g., feature size), or a tool for generating a map image of a sample. Examples of evaluation systems include inspection tools (e.g., for identifying defects), review tools (e.g., for classifying defects), measurement tools, or tools that can perform any combination of evaluation functions related to inspection tools, review tools, or measurement tools (e.g., measurement inspection tools). The electro-optical device 41 may be a component of a charged particle evaluation system 40, such as an inspection tool or a measurement inspection tool, or it may be part of an electron beam lithography tool. References to “tools” in this specification are intended to encompass devices, apparatus, or systems, and such tools may include various components that may be juxtaposed or not, and in particular, such as data processing elements, may be located in separate rooms.

[0079]

[0085] In this specification, the terms “subbeam” and “beamlet” are used interchangeably and are understood to encompass any radiation beam derived from the original radiation beam by separation or splitting of that beam. The term “beam” may be used synonymously with “subbeam” and “beamlet.” The term “manipulator” is used to encompass any element that affects the path of a subbeam or beamlet, such as a lens or deflector.

[0080]

[0086] While the present invention has been described in relation to various embodiments, other embodiments of the invention will become apparent to those skilled in the art by examining this specification and the embodiments disclosed herein. This specification and the examples are for illustrative purposes only, and the true scope and concept of the invention are intended to be shown by the appended claims.

[0081]

[0087] The above description is intended as an example, not a limitation. Therefore, as will be apparent to those skilled in the art, modifications may be made as described without departing from the scope of the appended claims.

[0082]

[0088] The embodiments include the following numbered clauses: 1. A method for loading a sample into a sample location, Loading a sample with an initial voltage onto the sample handler, While the sample is on the sample handler, the sample voltage is ramped up from the initial voltage to a predetermined voltage, When the sample reaches a predetermined voltage, the sample is moved from the sample handler to the sample position in the sample holder, where the sample position in the sample holder is at the predetermined voltage. Processing the sample at the sample location and Methods that include... 2. After the sample has been processed, the sample is moved from the sample location to the sample handler. While the sample is on the sample handler, ramp down the sample voltage to the initial voltage, When the sample voltage ramps down to the initial voltage, the sample is unloaded from the sample handler. The method described in Clause 1, further including the method described in Clause 1. 3. The method according to either of the provisions 1 and 2, wherein the initial voltage is the ground voltage. 4. The method described in any of the above clauses, wherein the sample is processed while the sample is at the desired voltage. 5. The method according to clause 4, wherein the desired voltage is equal to the predetermined voltage. 6. The method according to clause 5, wherein the sample holder is maintained at the desired voltage while this method is being performed. 7. The method according to Clause 4, wherein, after the sample has been moved from the sample holder to the sample position and before the sample is processed, the voltage of the sample is increased or decreased from a predetermined voltage to a desired voltage. 8. The method according to any of clauses 4 to 7, wherein the desired voltage is 3kV or higher, preferably 5kV to 50kV, and more preferably 10kV to 45kV. 9. Load another sample with an initial voltage onto the sample handler, While another sample is on the sample handler and being processed, ramp up the voltage of the other sample from its initial voltage to a predetermined voltage. When another sample reaches a predetermined voltage and the sample is processed, the other sample is moved from the sample handler to the sample position in the sample holder, where the sample position in the sample holder is at the predetermined voltage. Processing another sample at the sample location while the sample voltage ramp-down is taking place. The method described in any of clauses 2 to 8, further including the method described in any of clauses 2 to 8. 10. The method according to any of the above clauses, wherein the sample handler is electrically isolated, and while the sample voltage is ramped up, the sample and sample handler pass between two plates, one of the two plates being at a higher voltage than the other, and these two plates extend from the sample holder toward the sample handler path. 11. The method according to clause 10, wherein ramping up the voltage of a sample from an initial voltage to a predetermined voltage includes moving the sample on the sample handler between two plates so that it is closer to the sample holder, and the sample holder applying voltage to the sample by capacitive coupling. 12. The method according to clause 11, wherein the sample position of the sample holder is maintained at a predetermined voltage while the sample voltage is ramped up. 13. Ramping down the sample voltage from a predetermined voltage to an initial voltage is the method according to any of the provisions of 10 to 12, which includes moving the sample on the sample handler between two plates so that it is further away from the sample holder. 14. The method according to any of clauses 1 to 9, wherein the sample handler is electrically isolated, and the sample and sample handler are placed inside a conductive box, the conductivity of the conductive box being higher than the conductivity of the sample. 15. The method according to Clause 14, wherein ramping up the voltage of a sample from an initial voltage to a predetermined voltage includes moving the conductive box closer to the sample holder, the sample holder applying voltage to the conductive box by capacitive coupling, and the conductive box applying voltage to the sample by capacitive coupling. 16. The method according to clause 15, wherein the sample position in the sample holder is maintained at a predetermined voltage while the sample voltage is ramping up. 17. Ramping down the sample voltage from a predetermined voltage to an initial voltage is the method of any of the provisions of 14 to 16, which includes moving the conductive box further away from the sample holder while the sample and sample handler are placed inside the conductive box. 18. The sample handler is connected to a power supply, as described in any of the methods in clauses 1 to 9. 19. The method according to Clause 18, wherein the power supply is controlled to ramp up or ramp down the voltage of the sample handler to a target voltage, and the sample handler is electrically connected to the sample so that the sample handler is configured to apply the target voltage to the sample. 20. During ramp-up, the target voltage is a predetermined voltage, and during ramp-down, the target voltage is the initial voltage, as described in Clause 19. 21. While the sample voltage is ramping up, the sample handler is placed inside the voltage-controlled enclosure. The voltage-controlled enclosure is connected to the power supply. The method according to any one of the claims 1 to 9, wherein the voltage-controlled enclosure is configured to apply voltage to the sample by capacitive coupling. 22. The method according to Clause 21, wherein the power supply is controlled to ramp up or ramp down the voltage of a voltage-controlled enclosure to a target voltage, the target voltage being a predetermined voltage during ramp-up and the target voltage being an initial voltage during ramp-down. 23. The method according to either of the clauses 21 and 22, wherein the enclosure is a housing including a sample and a sample handler. 24. The housing, including a sample holder, as described in Clause 23. 25. The method according to either of the clauses 21 and 22, wherein the enclosure is a tunnel and the sample handler is configured to move through the tunnel as part of the path from the location where the sample is loaded onto the sample handler to the sample location in the sample holder. 26. The method of Clause 25, wherein loading the sample onto the sample handler is performed in the chamber, and after the sample has been loaded onto the sample handler, the sample handler moves from the chamber to the tunnel. 27. The method according to clause 26, wherein the chamber is a load-lock chamber and the tunnel and sample holder are located in a vacuum environment. 28. A computer program comprising instructions configured to control a charged particle system to perform the method described in any of the above clauses, wherein the sample holder is a stage and the processing at the sample location includes inspection by a charged particle device. 29. A system for loading a sample into a sample location, A sample holder configured to support the sample in the sample position, A sample processor configured to process samples placed at sample locations, The system includes a sample handler configured to hold a sample, move the sample to a sample position on a sample holder, and move the sample from the sample position on the sample holder, and this system includes, While the sample is on the sample handler, the sample voltage is ramped up from the initial voltage to a predetermined voltage, and / or A system configured to ramp down the voltage of a sample from a predetermined voltage to an initial voltage while the sample is on the sample handler. 30. The system described in Clause 29, wherein the system is a charged particle system and the sample holder is a stage. 31. The system according to Clause 30, wherein the sample processor is a charged particle device configured to inspect a sample placed at a sample location.

Claims

1. A method for loading a sample at a sample location, Loading a sample with an initial voltage onto the sample handler, While the sample is on the sample handler, the voltage of the sample is ramped up from the initial voltage to a predetermined voltage, When the sample reaches the predetermined voltage, the sample is moved from the sample handler to the sample position in the sample holder, wherein the sample position in the sample holder is at the predetermined voltage. To process the sample located at the aforementioned sample position. Methods that include...

2. After the sample has been processed, the sample is moved from the sample location to the sample handler. While the sample is on the sample handler, the voltage of the sample is ramped down to the initial voltage. When the voltage of the sample ramps down to the initial voltage, the sample is unloaded from the sample handler. The method according to claim 1, further comprising:

3. The method according to either claim 1 or 2, wherein the initial voltage is the ground voltage.

4. The method according to any one of claims 1 to 3, wherein the processing of the sample is performed while the sample is at a desired voltage.

5. Loading another sample having the aforementioned initial voltage onto the sample handler, While the other sample is on the sample handler and while the sample is being processed, the voltage of the other sample is ramped up from the initial voltage to the predetermined voltage. When the other sample reaches the predetermined voltage and the sample is processed, the other sample is moved from the sample handler to the sample position in the sample holder, wherein the sample position in the sample holder is at the predetermined voltage. While the voltage of the aforementioned sample is ramped down, another sample located at the sample position is processed. The method according to any one of claims 2 to 4, further comprising:

6. The method according to any one of claims 1 to 5, wherein the sample handler is electrically isolated, and while ramping up the voltage of the sample, the sample and the sample handler pass between two plates, one of the two plates is at a higher voltage than the other of the two plates, and the two plates extend from the sample holder toward the path of the sample handler.

7. The method according to claim 6, wherein ramping up the voltage of the sample from the initial voltage to the predetermined voltage includes moving the sample on the sample handler between the two plates so that it is closer to the sample holder, and the sample holder applying a voltage to the sample by capacitive coupling.

8. The method according to any one of claims 1 to 5, wherein the sample handler is electrically insulated, and the sample and the sample handler are placed in a conductive box while the voltage of the sample is ramped up.

9. The method according to any one of claims 1 to 5, wherein the sample handler is connected to a power supply.

10. The method according to claim 9, wherein the power supply is controlled to ramp up or ramp down the voltage of the sample handler to a target voltage, and the sample handler is electrically connected to the sample such that the sample handler is configured to apply the target voltage to the sample.

11. While the voltage of the sample is ramping up, the sample handler is placed inside a voltage-controlled enclosure. The voltage-controlled enclosure is connected to a power supply, The method according to any one of claims 1 to 5, wherein the voltage-controlled enclosure is configured to apply a voltage to the sample by capacitive coupling.

12. A computer program comprising instructions configured to control a charged particle system to perform the method according to any one of claims 1 to 11, wherein the sample holder is a stage and the processing at the sample location includes inspection by a charged particle device.

13. A system for loading a sample into a sample location, A sample holder configured to support the sample in the sample position, A sample processor configured to process the sample placed at the aforementioned sample location, A sample handler configured to hold the sample, move the sample to the sample position on the sample holder, and move the sample from the sample position on the sample holder, is included. The aforementioned system, While the sample is on the sample handler, the voltage of the sample is ramped up from an initial voltage to a predetermined voltage, and / or A system configured to ramp down the voltage of the sample from a predetermined voltage to an initial voltage while the sample is on the sample handler.

14. The system according to claim 13, wherein the system is a charged particle system and the sample holder is a stage.

15. The system according to claim 14, wherein the sample processor is a charged particle device configured to inspect a sample placed at the sample location.

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