Optical arrangement for use in exposure equipment

Abstract

Disclosed is an optical arrangement for use in an exposure apparatus, comprising: an object table assembly configured to hold and move an object in the plane of the object; and an optical scanning assembly configured to receive a radiation beam, guide the radiation beam toward the object to illuminate at least a portion of the object in the plane of the object, and then focus at least a portion of the radiation beam coming from the object, wherein the optical scanning assembly moves the radiation beam in a direction substantially opposite to the direction of movement of the object table assembly, thereby scanning the radiation beam over at least a portion of the object, so that the object table assembly and at least a portion of the optical scanning assembly move simultaneously while the object is illuminated by the radiation beam.

Description

[Technical Field]

[0001]

[0001] This application claims priority to European Application 23186771.4, filed on 20 July 2023, which is incorporated herein by reference in its entirety.

[0002]

[0002] The present invention relates to an optical arrangement for use in an exposure apparatus, and a method for improving the throughput of an exposure apparatus using such an optical arrangement. [Background technology]

[0003]

[0003] A lithography apparatus is a machine that imparts a desired pattern onto a substrate, usually onto a target portion of the substrate. Lithography apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In this case, a patterning device, also called a mask or reticle, may be used to generate the circuit pattern that will be formed on the individual layers of the IC. This pattern can be transferred to a target portion (e.g., a part of a die, or one or more dies) on a substrate (e.g., a silicon wafer) provided on a substrate support (or substrate table). The transfer of the pattern is typically done by imaging onto a radiative-sensitive material (resist) layer provided on the substrate. Generally, a single substrate will contain a network of adjacent target portions to which patterns are continuously applied. These target portions are generally called "fields".

[0004]

[0004] As semiconductor manufacturing processes continue to advance, the dimensions of circuit elements are continuously shrinking, while substrate throughput is increasing. This imposes increasingly stringent constraints on lithography systems. One way to improve wafer throughput in a lithography apparatus may be to reduce the exposure time per field. This can be achieved, for example, by increasing the movement or scanning speed of the patterning device support (e.g., mask support) and substrate support. A typical lithography exposure apparatus includes a projection system configured to provide, for example, an optical reduction ratio of 4:1. This means that, in this example, the patterning device support, positioned to support the patterning device, moves four times faster than the substrate support. Accelerating and / or decelerating the patterning device support required to support the increased movement or scanning speed has become quite difficult.

[0005]

[0005] To achieve higher substrate throughput of a lithography system without requiring unduly high acceleration and speed of the patterning device support and the substrate support, as disclosed in, for example, US6788391B2 and US7016013B2, substrate exposure is performed at a non-constant speed. This means that not only the target portion (field) is exposed when the substrate support moves at a constant speed, but also the target portion is exposed during acceleration and deceleration of the substrate support (before and after the exposure period at the constant speed of the substrate support, respectively). To supply a sufficient dose to the target portion, the time interval between consecutive light pulses (e.g., from an excimer laser) is inversely proportional to the speed of the substrate support. This means that the laser pulse rate is adapted to the speed of the substrate support even during acceleration and deceleration of the substrate support. Controlling the exposure amount by changing the laser output (or the output of the radiation system) according to the speed of the substrate support may cause instabilities and undesirable variations in the laser (or the radiation system). As a result, the exposure amount on the substrate may not reach the required level in at least a part of the target portion, and defective dies may occur.

[0006]

[0006] In semiconductor manufacturing, it is always desirable to continuously improve the throughput of wafers (or patterning) in order to improve productivity. Therefore, an object of the present disclosure is to further improve the throughput of existing lithography apparatuses while simultaneously addressing the aforementioned problems.

Summary of the Invention

[0007]

[0007] In a first aspect of the present invention, there is provided an optical arrangement for use in an exposure apparatus, comprising an object table assembly configured to hold and move an object, for example a patterning device, within the plane of the object, and an optical scan assembly configured to receive a radiation beam, direct the radiation beam towards the object to illuminate at least a region of the object within the plane of the object, and then collect at least a part of the radiation beam coming from the object, wherein the optical scan assembly moves the radiation beam in a direction substantially antiparallel to the direction of movement of the object table assembly, whereby the radiation beam is scanned over at least a part of the object, and at least a part of the object table assembly and the optical scan assembly are operable to move simultaneously while the object is illuminated by the radiation beam.

[0008]

[0008] In a second aspect of the present invention, there is provided a lithographic apparatus comprising the optical arrangement according to the first aspect. [[ID=​​​​​​​​​

[0011] The above and other aspects of the present invention will be understood by considering the following examples. [Brief explanation of the drawing]

[0012]

[0012] Hereinafter, embodiments of the present invention will be described as merely one example with reference to the attached drawings.

[0013] [Figure 1] This shows a lithography machine. [Figure 2] The measurement and exposure processes in the apparatus shown in Figure 1 are schematically illustrated. [Figure 3] A schematic optical arrangement for use in an exposure apparatus according to a certain embodiment (for example, the lithography apparatus shown in Figure 1) is shown. [Figure 4A] A schematic diagram of the optical arrangement 400 of an embodiment configured for use in a transmission lithography apparatus (e.g., a DUV scanner) during three different time instances of exposure is shown. [Figure 4B] A schematic diagram of the optical arrangement 400 of an embodiment configured for use in a transmission lithography apparatus (e.g., a DUV scanner) during three different time instances of exposure is shown. [Figure 4C] A schematic diagram of the optical arrangement 400 of an embodiment configured for use in a transmission lithography apparatus (e.g., a DUV scanner) during three different time instances of exposure is shown. [Figure 5A] The optical arrangements of different embodiments configured for use in a reflective lithography apparatus during two different time instances of exposure are schematically shown. [Figure 5B] The optical arrangements of different embodiments configured for use in a reflective lithography apparatus during two different time instances of exposure are schematically shown. [Modes for carrying out the invention]

[0014]

[0013] Before describing embodiments of the present invention in detail, it is useful to show exemplary environments in which embodiments of the present invention can be carried out.

[0015]

[0014] Figure 1 schematically shows a lithography apparatus LA. The apparatus includes an illumination system (illuminator) IL configured to adjust the radiation beam RB (e.g., UV radiation or DUV radiation), a patterning device support or support structure (e.g., mask table) MT connected to a first positioner PM, which is constructed to support an object OB, which in this particular example is a patterning device (e.g., a mask or reticle), and is configured to precisely position the patterning device according to specific parameters, two substrate tables (e.g., wafer tables) WTa and WTb, which are respectively constructed to hold a substrate (e.g., a resist-coated wafer) W, and are respectively connected to a second positioner PW, which is configured to precisely position the substrate according to specific parameters, and a projection system (e.g., refractive projection lens system) PS configured to project the pattern given to the radiation beam RB by the patterning device OB onto a target portion C of the substrate W (e.g., including one or more dies). A reference frame RF connects the various components and serves as a reference for setting and measuring the positions of the patterning device and the substrate and the features on them.

[0016]

[0015] The lighting system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof, to guide, shape, or control radiation.

[0017]

[0016] The patterning device support MT holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithography apparatus, and other conditions such as whether the patterning device is held in a vacuum environment. The patterning device support can hold the patterning device using mechanical, vacuum, electrostatic or other clamping techniques. The patterning device support MT may be, for example, a frame or table that can be fixed or movable as needed. The patterning device support may ensure that the patterning device is in a desired position relative to, for example, the projection system.

[0018]

[0017] As used herein, the term “patterning device” should be broadly interpreted to refer to any device that can be used to impart a pattern to the cross-section of a radiation beam in order to create a pattern in a target portion of a substrate. It should be noted that the pattern imparted to the radiation beam may not precisely match the desired pattern in the target portion of the substrate, for example, if the pattern includes phase-shift features or so-called assist features. Typically, the pattern imparted to the radiation beam will correspond to a specific functional layer in a device to be created in the target portion, such as an integrated circuit.

[0019]

[0018] As shown herein, the apparatus is transmissive (for example, using a transmissive patterning device). Alternatively, the apparatus may be reflective (for example, using a programmable mirror array of the type described above, or using a reflective mask). Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. The terms “reticle” or “mask” as used herein may be considered synonymous with the more general term “patterning device.” The term “patterning device” can also be interpreted as referring to a device that stores pattern information in digital form for use in controlling such a programmable patterning device.

[0020]

[0019] The term “projection system” as used herein should be broadly interpreted to encompass all types of projection systems, including refractive, reflective, reflective-refracting, magnetic, electromagnetic, and electrostatic optical systems, or any combination thereof, that are appropriate for the exposure radiation used or for other factors such as the use of immersion liquid or vacuum. The term “projection lens” as used herein may be considered synonymous with the more general term “projection system.”

[0021]

[0020] Lithography apparatuses may also be of a type in which at least a portion of the substrate may be covered with a liquid having a relatively high refractive index (e.g., water) to fill the space between the projection system and the substrate. In addition, an immersion liquid may be added to another space within the lithography apparatus, for example, between the mask and the projection system. Immersion techniques are well known in the art to increase the numerical aperture of the projection system.

[0022]

[0021] During operation, the illuminator IL receives a radiation beam from the radiation source SO. For example, if the radiation source is an excimer laser, the radiation source and the lithography apparatus may be separate. In such cases, the radiation source is not considered to be part of the lithography apparatus, and the radiation beam is delivered from the radiation source SO to the illuminator IL using a beam delivery system BD, for example, which includes appropriate guide mirrors and / or beam expanders. In other cases, for example, if the radiation source is a mercury lamp, the radiation source may be an integral part of the lithography apparatus. The radiation source SO and the illuminator IL, together with the beam delivery system BD if necessary, may be referred to as the radiation system.

[0023]

[0022] The illuminator IL may include, for example, an adjuster AD, an integrator IN, and a capacitor CO, which adjust the angular intensity distribution of the radiation beam RB. The illuminator may be used to adjust the radiation beam RB to give the cross-section of the radiation beam a desired uniformity and intensity distribution.

[0024]

[0023] The radiating beam RB is incident on a patterning device OB held on a patterning device support MT, and a pattern is formed by the patterning device. After traversing the patterning device (e.g., mask) OB, the radiating beam RB passes through a projection system PS, which focuses the beam onto a target portion C of the substrate W. A second positioner PW and position sensor IF (e.g., interferometer device, linear encoder, 2-D encoder, or capacitive sensor) can be used to precisely move the substrate table WTa or WTb to position, for example, various target portions (fields) C within the path of the radiating beam RB. Similarly, a first positioner PM and another position sensor (not explicitly shown in Figure 1) can be used to precisely position the patterning device (e.g., mask) OB relative to the path of the radiating beam RB, for example, after mechanical removal from a mask library or during scanning.

[0025]

[0024] The patterning device (e.g., mask) OB and the substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. The indicated substrate alignment marks occupy dedicated target areas, but may also be located in the space between target areas (these are known as scribe line alignment marks). Similarly, in situations where two or more dies are provided on the patterning device (e.g., mask) OB, mask alignment marks may be located between dies. Smaller alignment marks may also be contained within the die between device features, in which case it is desirable that the markers be as small as possible and that they do not require any imaging or process conditions different from adjacent features. Alignment systems for detecting alignment markers are described further below.

[0026]

[0025] The illustrated apparatus can be used in various modes. In scan mode, the patterning device support (e.g., mask table) MT and the substrate table WT are scanned synchronously while the pattern applied to the radiation beam RB is projected onto the target portion C (i.e., single dynamic exposure). The speed and direction of the substrate table WT relative to the patterning device support (e.g., mask table) MT may be determined by the (reduction) magnification and image inversion characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width of the target portion (non-scan direction) in single dynamic exposure, while the length of the scan operation determines the height of the target portion (scan direction). Other types of lithography apparatuses and operating modes are possible as are well known in the art. For example, step mode is known. In so-called "maskless" lithography, the programmable patterning device is stationary but held with pattern changes, and the substrate table WT is moved or scanned.

[0027]

[0026] The above usage modes or combinations and / or variations of completely different usage modes may also be used.

[0028]

[0027] The lithography apparatus LA is a so-called dual-stage type having two substrate tables WTa, WTb, and two stations—an exposure station EXP and a measurement station MEA—and the substrate tables can be swapped between the two stations. While one substrate on one substrate table is being exposed at the exposure station, another substrate can be loaded onto the other substrate table at the measurement station, and various preparation steps can be performed. This allows for a significant increase in the throughput of the apparatus. Preparation steps may include mapping the surface height contour of the substrate using a level sensor LS and measuring the position of alignment markers on the substrate using an alignment sensor AS. If the position sensor IF cannot measure the position of the substrate table when it is in both the measurement station and the exposure station, a second position sensor may be provided to track the position of the substrate table at both stations relative to a reference frame RF. Other configurations are known and available instead of the dual-stage configuration shown. For example, other lithography apparatuses are known that have substrate tables and a measurement table. These are docked together when performing preliminary measurements and then undocked while the substrate tables are exposed.

[0029]

[0028] Figure 2 shows the steps of exposing a target portion (e.g., field or die) on a substrate W in the dual-stage apparatus of Figure 1. The dotted box on the left shows the steps performed at the measurement station MEA, while the right side shows the steps performed at the exposure station EXP. As described above, depending on the case, one of the substrate tables WTa and WTb is at the exposure station and the other is at the measurement station. For the sake of this explanation, we assume that the substrate W is already loaded into the exposure station. In step 200, a new substrate W' is loaded into the apparatus by a mechanism not shown. These two substrates are processed in parallel to increase the throughput of the lithography apparatus.

[0030]

[0029] First, referring to a newly loaded substrate W', this may be an untreated substrate with a fresh photoresist prepared for the first exposure in the apparatus. However, generally, since the lithography process described is only one step in a series of exposure and processing steps, the substrate W' may have already passed through this apparatus and / or other lithography apparatuses several times and undergone subsequent processes. Particularly with regard to the issue of improving overlay performance, the challenge is to ensure that the new pattern is applied to the exact correct location on a substrate that has already undergone one or more cycles of patterning and processing. These processing steps gradually introduce distortions into the substrate that must be measured and corrected in order to achieve satisfactory overlay performance.

[0031]

[0030] As just mentioned, the preceding and / or subsequent patterning steps may be performed with other lithography equipment, and may even be performed with different types of lithography equipment. For example, in a device manufacturing process, some layers with very stringent parameter requirements, such as resolution and overlay, may be performed with more advanced lithography tools than other layers with less stringent requirements. Thus, some layers may be exposed with immersion lithography tools while others are exposed with "dry" tools. Some layers may be exposed with tools operating at DUV wavelengths while others are exposed using EUV wavelength radiation.

[0032]

[0031] In 202, the alignment of the substrate with respect to the substrate table WTa / WTb is measured and recorded by alignment measurement using substrate marks P1, etc. and an image sensor (not shown). In addition, several alignment marks on the substrate W' are measured using the alignment sensor AS. These measurements are used in one embodiment to establish a "wafer grid" that maps the distribution of marks across the entire substrate with very high accuracy, including any distortion relative to the nominal rectangular grid.

[0033]

[0032] In step 204, a map of wafer height (Z) relative to the XY position is also measured using a level sensor LS. Conventionally, height maps are used only to achieve precise focusing of the exposure pattern. However, height maps may also be used for other purposes.

[0034]

[0033] When the substrate W' is loaded, recipe data 206 is received that defines the exposure to be performed, as well as the characteristics of the wafer and the patterns already created and to be created on the wafer. These recipe data are supplemented with the wafer position, wafer grid, and height map measurements created in 202 and 204, so that a complete set of recipe and measurement data 208 can be passed to the exposure station EXP. For example, the alignment data measurements include the X and Y positions of alignment targets formed in a fixed or nominally fixed relationship with respect to the product pattern, which is the product of the lithography process. These alignment data obtained immediately before exposure are used to generate an alignment model that includes parameters to fit the model to the data. These parameters and the alignment model will be used during the exposure operation to correct the position of the pattern applied in the current lithography step. The model in use interpolates the positional deviation between the measured positions. Conventional alignment models may include four, five, or six parameters that together define the translation, rotation, and scaling of an "ideal" grid of different dimensions. More advanced models that use more parameters are known.

[0035]

[0034] In step 210, wafers W' and W are swapped, so that the substrate W' to be measured becomes the substrate W that enters the exposure station EXP. In the exemplary apparatus of Figure 1, this swap is performed by swapping supports WTa and WTb within the apparatus, so that the substrates W and W' are precisely clamped and positioned on these supports, maintaining the relative alignment between the substrate table and the substrate itself. Thus, once the tables are swapped, determining the relative position between the projection system PS and the substrate table WTb (formerly WTa) is all that is needed to utilize the measurement information 202, 204 about the substrate W (formerly W') when controlling the exposure steps. In step 212, reticle alignment is performed using mask alignment marks M1, M2. In steps 214, 216, and 218, scanning operations and radiation pulses are applied to consecutive target positions on the substrate W to complete the exposure of multiple patterns.

[0036]

[0035] By using the alignment data and height map obtained at the measurement station during the exposure step, these patterns are precisely aligned to the desired position, in particular to features previously placed on the same substrate. The exposed substrate, here denoted as W'', is unloaded from the apparatus in step 220 and undergoes etching or other processes according to the exposed pattern.

[0037]

[0036] Those skilled in the art will see that the above description is a simplified overview of several very detailed steps relating to an example of a real manufacturing situation. For example, rather than measuring alignment in a single pass, there are often separate phases of rough measurement and fine measurement, using the same or different marks. The rough alignment measurement step and / or the fine alignment measurement step can be performed before or after the height measurement, or alternately.

[0038]

[0037] In the flow chart of Figure 2, on the measurement side, both the wafer alignment data measured in step 202 and the wafer height / leveling data measured in step 204 are measured relative to a reference configuration or fiducial. For example, a fiducial may include a fiducial sensor on a wafer stage or chuck (more commonly on a substrate support) and a plurality of reference structures (e.g., a set of marks) which each include one or more reference structures or marks on the substrate support and one or more reference structures or marks on the reticle and / or reticle stage.

[0039]

[0038] On the measurement side, the alignment sensor and / or leveling sensor illuminate one or more substrate support marks on the reference plane during alignment and leveling (usually both are performed, but the concepts disclosed herein are individually applicable to measurement-exposure matching in one or both dimensions in the direction parallel to and / or perpendicular to the substrate plane). As a result, the aligned wafer position within the wafer plane is described fiducially by wafer alignment data (measurements of alignment structures or marks on the wafer), and / or the wafer position in the direction perpendicular to the wafer plane is described fiducially by leveling data. Typically, two or more marks are measured on the fiducial to characterize or model the shape of the reference plane, and by extension, the change in the shape of the reference plane over time. This may be done, for example, using alignment modeling techniques to measure and model the alignment deviation (APD) of each mark relative to the nominal or expected position, assuming a perfectly flat surface.

[0040]

[0039] On the exposure side, the reticle alignment step of step 212 aligns the reticle with respect to the fiducial. This is achieved by using a fiducial sensor on the fiducial, which may measure illumination (e.g., from the exposure source) through one or more reference structures or marks on the reticle and / or reticle stage. In addition to positioning the reticle stage, other corrections may be performed on the exposure side, such as lens correction based on lens aberration measurement (wavefront measurement), which may also be performed by the fiducial sensor.

[0041]

[0040] When these measurement steps 202, 204, and 212 are performed on the fiducial, the position of the reticle relative to the wafer can be determined.

[0042]

[0041] The exposure-side measurement uses the measurement-side measurement as a reference and assumes that the measured value is correct. For example, the exposure-side will correct the exposure-side measured value and / or model (for example, for reticle shape and / or lens aberrations) based on the shape of the reference surface measured on the measurement-side.

[0043]

[0042] The initial calibration step, also called measurement-exposure matching, is typically performed during the setup of the lithography apparatus. Simply put, this matching is performed using "stage alignment" measurements on the measurement side and "reticle alignment" measurements on the exposure side. This matching calibrates the difference between the exposure-side reference measurement and the measurement-side reference measurement, which arises from using different methods on each side. During manufacturing, the fiducial is affected by time drift. Therefore, measurement-side measurements are periodically performed on the fiducial to characterize / model this drift. In this way, any change in the fiducial over time is taken into account on the exposure side. However, monitoring this drift works under the assumption that the measured fiducial looks the same on the measurement side and the exposure side, and as a result the same fiducial time drift is captured.

[0044]

[0043] However, since the measurement methods and structures being measured differ on each side, this is not always the case, and in reality, differences in the measured drift will be detected on each side. In particular, since only the measuring side measures the surface (the mark on top) of the fiducial without using a camera / detector inside the fiducial, factors that degrade this surface and / or the mark on the surface will only be detected on the measuring side. Such degradation includes degradation of the mark itself and / or the fiducial coating.

[0045]

[0044] When the measurement on the measurement side is modeled, the modeled data will include the main fiducial descriptive component that describes the reference plane shape and additional unwanted components resulting from fiducial degradation. On the exposure side, this additional unwanted component is not measured, and only the main component is measured. Therefore, the exposure side control incorrectly assumes that this additional unwanted component arises from exposure side errors (e.g., errors in the reticle, lens, and / or reticle stage) and determines incorrect correction values ​​for this (e.g., through the control / operation of the reticle, lens, and / or reticle stage). These incorrect "correction values" are the direct cause of imaging errors in the final product.

[0046]

[0045] In semiconductor manufacturing, it is always desirable to continuously improve wafer (or patterning) throughput in order to improve productivity. One way to improve wafer throughput in a lithography apparatus may be to reduce the exposure time per field (or target area). This may be achieved, for example, by increasing the movement speed or scan speed of the patterning device support (e.g., mask support) and the substrate table. Referring temporarily back to Figure 1, the transmissive lithography apparatus LA includes a projection system (e.g., a reflective-refractive projection lens system) PS configured to project the pattern applied to the radiation beam B by the patterning device OB onto the target area C of the substrate W. The projection system PS is configured to provide, for example, an optical reduction ratio of 4:1. This means that the patterning device support MT moves four times faster than the substrate table WTa. Accelerating and / or decelerating the patterning device support MT required to support the increased movement speed or scan speed has become quite difficult. First, considering that the current movement speed and acceleration of the patterning device support MT and the board table WTa are already high, it will be very difficult to continue increasing these movement speeds. Second, large acceleration and / or deceleration of the patterning device support MT will inevitably cause various disturbances in the system, which can lead to performance degradation. Furthermore, increasing the movement speed of the patterning device support MT will require a corresponding increase in system load.

[0047]

[0046] An alternative method for improving wafer throughput may be to configure positioners (e.g., the first positioner PM and the second positioner PW in Figure 1) for the patterning device support (e.g., the mask support) and the substrate table (e.g., the wafer table) so that the substrate is exposed when both the patterning device support and the substrate table are moving or scanning at non-constant speeds. This may be achieved by applying sinusoidal setpoints to the positioners to ensure continuous changes in speed. However, such methods are complex and sensitive to errors.

[0048]

[0047] Accordingly, an object of this disclosure is to provide a method and apparatus that can address the aforementioned problems while simultaneously improving the wafer throughput of a lithography apparatus.

[0049]

[0048] According to one aspect of the present disclosure, referring to Figure 3, an optical arrangement 300 for use in an exposure apparatus, for example, a lithography apparatus LA shown in Figure 1, comprising: an object table assembly OTA configured to hold and move an object OB in the object plane PO; and an optical scan assembly OSA configured to receive an input radiation beam RB, guide the input radiation beam RB toward the object OB to illuminate at least a portion of the object OB in the object plane PO, and subsequently focus at least a portion of the radiation beam RB' coming from the object OB (e.g., the portion of the radiation beam RB' that has passed through the object OB), wherein at least a portion of the object table assembly OTA and the optical scan assembly OSA is configured such that the optical scan assembly OSA moves in the direction of movement of the object table assembly OTA (e.g., at a velocity V shown in Figure 3). OB In a direction substantially opposite to or opposite to (for example, the velocity V shown in Figure 3) RBThe input radiation beam RB is moved in a direction such that the object OB is simultaneously moved while being illuminated by the input radiation beam RB so as to scan the input radiation beam RB over at least a part of the object OB.

[0050]

[0049] As shown in FIG. 3, the object OB moves along the X-axis in the first moving direction (e.g., to the right) at the first speed V OB and the input radiation beam RB moves in the second moving direction opposite to the first moving direction at the second speed V RB Therefore, the effective speed V eff of the object OB with respect to the input radiation beam RB is the sum of the actual speed V OB of the object and the actual speed V RB of the input radiation beam, and can be expressed as follows. |V eff | = |V OB | + |V RB | [1] The speed V OB of the object OB and the speed V RB of the input radiation beam RB can be expressed as follows using the effective speed V eff . |V OB | = x · |V eff | [2] |V RB | = (1 - x) · |V eff |, (0 < x < 1) [3]

[0051]

[0050] Thus, while keeping the speed V OB of the object OB relatively low, the relative speed V effThis makes it possible to increase the effective velocity V of the object OB. As a result, the time it takes for the input radiation beam RB to traverse the object OB is reduced. When such an optical arrangement is used in a lithography apparatus (e.g., shown in Figure 1), the exposure time per field is reduced, and consequently, wafer throughput is improved. In such a case, the speed of the substrate support (e.g., WTa in Figure 1) is equal to the effective velocity V of the object OB during exposure. eff This will synchronize with the speed V of the substrate support WTa. For example, in the case of a projection system PS with an optical reduction ratio of 4:1, the speed V of the substrate support WTa will be synchronized. WTa V WTa = 0.25 × V eff Therefore, in the case of a projection lens system with a specific reduction ratio DM, the speed of the substrate support WTa is V WTa =V eff It is obvious to those skilled in the art that the reduction ratio DM will be / DM. The reduction ratio DM may be, for example, 2x, 3x, 4x, 6x, or 8x, or any value within this range.

[0052]

[0051] Speed ​​V OB , V RB , V eff It will be understood by those skilled in the art that the exposure can be constant over time or may vary over time. In other words, exposure is constant speed V OB , V RB , V eff This can sometimes be done at a non-constant (or variable) speed V. OB , V RB , V eff Exposure may also be performed using a different method. The actual speed (or speed profile) may be determined by the required or desired wafer throughput.

[0053]

[0052] In one embodiment, object OB may include a patterning device which is a mask (for example, shown in Figure 1) containing a circuit pattern to be transferred to a target portion C on a substrate W.

[0054]

[0053] In one embodiment, the focused portion of the radiation beam RB' coming from the object OB may include the portion of the radiation beam RB' that has passed through the object OB. If the object OB is a patterning device, such a transmitted radiation beam RB' may carry a pattern imparted by the patterning device, which may be transferred to a target portion of the substrate by a projection lens assembly (as described above in relation to Figure 1).

[0055]

[0054] In one embodiment, the optical scan assembly OSA may be configured to direct the input radiation beam RB toward the object OB at a normal incidence angle. This may be a preferred configuration when the optical arrangement 300 is used in a lithography apparatus, particularly a transmission lithography apparatus, because illuminating the object OB (e.g., a transmission mask) at a normal incidence angle can reduce the optical distortion of the pattern imparted to the transmitted portion of the radiation beam RB' by the object OB.

[0056]

[0055] In one embodiment, the object table assembly OTA may include an object support for holding an object OB and at least one positioner (not shown) for positioning the object support. Each of the at least one positioner may include one or more actuators for acting on the object support.

[0057]

[0056] In one embodiment, at least one positioner may be configured to move the object support in a first direction along a first axis (e.g., the X-axis) and in a second direction along a second axis (e.g., the Y-axis) perpendicular to the first axis, where both the first and second directions lie within the object's plane PO.

[0058]

[0057] The optical scanning assembly OSA may be a stage system comprising multiple optical elements. At least a portion of the multiple optical elements are operable to move. The stage system may comprise multiple actuators arranged to actuate and move (scan) at least a portion of the multiple optical elements.

[0059]

[0058] The following paragraphs will describe the specific configuration of the optical arrangement 300 in relation to the lithography apparatus. However, it will be understood that the optical arrangement 300 may be configured in a different way for use with other apparatuses.

[0060]

[0059] Figures 4A to 4C schematically show one embodiment of the optical arrangement 400 configured for use in a transmission lithography apparatus (e.g., a DUV scanner) in three different time instances T1, T2, and T3. Time instances T1, T2, and T3 may correspond to a time during scan-up exposure, the end of scan-up exposure, and a time during scan-down exposure, respectively.

[0061]

[0060] Referring to Figures 4A to 4C, in one embodiment the optical scanning assembly OSA may comprise at least a first pair of optical elements OE11, OE12 configured to receive an input radiant beam RB and guide the radiant beam RB toward an object OB for illumination, and at least the first optical element OE11 of the first pair of optical elements OE11, OE12 may be operable to move relative to the second optical element OE12 of the first pair of optical elements OE11, OE12 in order to move the radiant beam RB. In one embodiment the first optical element OE11 of the first pair of optical elements OE11, OE12 may be operable to move, and the second optical element OE12 of the first pair of optical elements OE11, OE12 may be fixed. The optical elements OE11, OE12 may be reflective elements (e.g., mirrors).

[0062]

[0061] Continuing to refer to Figures 4A to 4C, the optical scanning assembly OSA may further include at least a second pair of optical elements OE21, OE22 configured to focus at least a portion of the radiation beam RB' coming from the object OB (in this case, the portion of the radiation beam RB' that has passed through the object OB) and to guide at least a portion of the radiation beam RB' coming from the object OB, wherein at least the first optical element OE21 of the second pair of optical elements OE21, OE22 may be operable to move relative to the second optical element OE22 of the second pair of optical elements OE21, OE22. In some embodiments, the first optical element OE21 of the second pair of optical elements OE21, OE22 may be operable to move, and the second optical element OE22 of the second pair of optical elements OE21, OE22 is fixed. The optical elements OE21, OE22 may be reflective elements (e.g., mirrors).

[0063]

[0062] In one embodiment, a second pair of optical elements OE21, OE22 may be configured to guide at least a portion of the radiation beam RB' coming from the object OB along a fixed optical path. When used in a lithography apparatus, the focused portion of the radiation beam RB' coming from the object OB (e.g., the transmitted radiation beam RB') may be directed by the second pair of optical elements OE21, OE22 to a projection lens assembly PL (e.g., the projection system PS shown in Figure 1), and the projection lens assembly PL may be configured to project the focused radiation beam RB' onto a target portion of the substrate. Even slight deviations of the focused radiation beam RB' from the optimal optical path (e.g., directional and lateral deviations) can cause significant misalignment in the downstream optics (e.g., the projection lens assembly PL), resulting in imaging errors. Therefore, it is advantageous that the focused portion of the radiation beam RB' coming from the object OB is guided along a fixed optical path when it leaves the optical scan assembly OSA.

[0064]

[0063] In some embodiments, the optical scan assembly OSA may include additional optical elements (e.g., one or more lenses and / or one or more mirrors). Such additional optical elements may be placed between two of the first pair of optical elements OE11, OE12 and / or the second pair of optical elements OE21, OE22 and may be used for radiation beam control (e.g., beam shaping, beam steering, etc.). In some embodiments, the additional optical elements may be positioned to ensure that the focused portions of the radiation beam RB and radiation beam RB' incident on the object OB are not substantially affected by the scanning operation.

[0065]

[0064] Referring to Figures 4A and 4C, the first pair of optical elements OE11 and OE12 may be located on the first side of the object's plane PO, and the second pair of optical elements OE21 and OE22 may be located on the second side of the object's plane PO. The first optical element OE11 of the first pair of optical elements OE11 and OE12 and the first optical element OE21 of the second pair of optical elements OE21 and OE22 may move simultaneously to change the distance between the first optical elements OE11 and OE21 of the first pair of optical elements OE11 and OE12 and the first optical elements OE21 and OE22, respectively, and the second optical elements OE12 and OE22, respectively.

[0066]

[0065] In one embodiment, each of the first optical element OE11, OE21 and the second optical element OE12, OE22, either or both of the first optical element pair OE11, OE12 and / or the second optical element pair OE21, OE22, may have a parallel reflective surface. For example, as shown in Figures 4A to 4C, the first optical element pair OE11, OE12 may include a first movable reflector OE11 and a first fixed reflector OE12. The first movable reflector OE11 may be movable relative to the first fixed reflector OE12 in a plane substantially parallel to the plane of object OB. A first fixed reflector OE12 may be configured to receive the input radiation beam RB and reflect it to a first moving reflector OE11, which may be configured to reflect the input radiation beam RB toward an object OB. The input radiation beam RB may be incident normally to the object OB. Movement of the first moving reflector OE11 may result in movement of the input radiation beam RB relative to the object OB. A second pair of optical elements OE21, OE22 may include a second moving reflector OE21 and a second fixed reflector OE22. The second moving reflector OE21 may be movable in a plane substantially parallel to the plane of the object OB relative to the second fixed reflector OE22. The second moving reflector OE21 may be configured to focus a portion of the radiation beam RB' transmitted from the object OB and reflect it toward the second fixed reflector OE22. A second fixed reflector OE22 may be configured to reflect a portion of the transmitted radiation beam RB' into a fixed optical path. In a preferred embodiment, the first moving reflector OE11 and the second moving reflector OE21 may be operable to move simultaneously at the same speed, i.e., in the same direction and at the same velocity. This may ensure that a portion of the transmitted radiation beam RB' follows a fixed optical path when directed towards the projection lens assembly PL.

[0067]

[0066] The first moving reflector OE11 and the second moving reflector OE21 may each be operable to move from a start position to an end position. The movement of the first moving reflector OE11 and the second moving reflector OE21 may be enabled by at least one actuator. In some examples, the end position may be an absolute end position where at least one actuator reaches the end of the movement. In other examples, the end position may be an intermediate position where at least one actuator is still within its range of movement. Such intermediate positions may be predefined. The distance between the start position and the end position may be large enough so that the input radiated beam RB can scan the entire width of the target area (e.g., the area including the circuit pattern) of the object OB (e.g., the mask). In some embodiments, the optical scanning assembly OSA may include a controller configured to control at least one actuator that enables the movement of the moving reflectors OE11, OE21, the object OB, and / or the substrate support (e.g., WTa in Figure 1).

[0068]

[0067] Figure 4A schematically shows the optical arrangement 400 in the first time instance T=T1 during scan-up exposure. The first fixed reflector OE12 may be fixed near one edge of object OB when object OB is in the starting position. The first movable reflector OE11 may remain in a default position before exposure begins. The default position of the first movable reflector OE11 may be close enough to the position of the first fixed reflector OE12 so that the input radiation beam RB remains outside the target region before exposure begins. The second fixed reflector OE22 and the second movable reflector OE21 may be placed on the opposite side of object OB (or the object's plane PO) and may be positioned similarly to the first fixed reflector OE12 and the first movable reflector OE11, respectively.

[0069]

[0068] Referring again to Figure 4A, during scan-up exposure, the first moving reflector OE11 and the second moving reflector OE21 move simultaneously and at the same speed (V) from their respective starting position (e.g., default position) to their respective ending position (e.g., predetermined intermediate position). OE11 =V OE21 The first and second moving reflectors OE11 and OE21 move along the X-axis in a first direction (right to left), and as a result, the input radiation beam RB may scan the area where object OB is located in the first direction. The scan speed V of the input radiation beam RB This may be the same as the scan speed of the first moving reflector OE11 (and optionally the second moving reflector OE21) (V RB =V OE11 ). At the same time, the object table assembly OTA speeds up object OB V OB Similarly, it may be possible to move along the X-axis, but in a second direction (from left to right) opposite to the first direction.

[0070]

[0069] In another embodiment, the first moving reflector OE11 and the second moving reflector OE21 are at different speeds, i.e., V OE11 ≠V OE21 It may be possible to operate in a way that allows movement.

[0071]

[0070] Figure 4B schematically shows the optical arrangement 400 at the second time instance T=T2, which is the end of the scan-up exposure. At this point, the first moving reflector OE11 and the second moving reflector OE21 may both be stopped at their respective end positions, waiting for a command to perform the next exposure (or scan-down exposure).

[0072]

[0071] Figure 4C schematically shows the optical arrangement 400 in the third time instance T=T3 during scandown exposure. During scandown exposure, the first moving reflector OE11 and the second moving reflector OE21 move simultaneously and at the same speed (V) from their respective end positions to their respective start positions. OE11 =V OE21 It may be possible to operate in a way that returns in the second direction. The first and second moving reflectors OE11 and OE21 move along the X-axis in a second direction (left to right), and as a result the input radiation beam RB may scan the area where object OB is located in the second direction. Scan rate V of the input radiation beam RB This may be the same as the scan speed of the first moving reflector OE11 (and optionally the second moving reflector OE21) (V RB =V OE11 ). At the same time, the object table assembly OTA is speed V OB Similarly, it may be possible to move along the X-axis, but in the first direction (right to left).

[0073]

[0072] In another embodiment, the first moving reflector OE11 and the second moving reflector OE21 are at different speeds, i.e., V OE11 ≠V OE21 It may be possible to operate in a way that allows movement.

[0074]

[0073] In either scan-up or scan-down exposure, a portion of the transmitted radiation beam RB' focused by the second pair of optical elements OE21, OE22 may be guided along a fixed optical path in a downstream optical system, such as a projection lens assembly PL. Additional optical elements (e.g., one or more lenses and / or one or more mirrors) may be arranged to guide the transmitted radiation beam RB'.

[0075]

[0074] The concept of increasing the effective velocity of an object relative to the input radiation beam by moving the input radiation beam and the object simultaneously in antiparallel or opposite directions will be understood to be equally applicable to reflective lithography equipment (e.g., EUV lithography equipment). In such cases, the object may be configured to reflect the input radiation beam rather than transmit it, as shown in Figures 3 and 4A to 4C.

[0076]

[0075] Figures 5A and 5B schematically show another embodiment of the optical arrangement 500 configured for use in a reflective lithography apparatus (e.g., an EUV scanner) in two different time instances T4 and T5. For brevity of explanation, the same reference numerals are used for elements similar to or identical to those shown in Figures 3 or 4A to 4C, and the description of such elements will not be repeated in subsequent paragraphs. In this embodiment, object OB-R may include, for example, a reflective mask for use in an EUV exposure apparatus. The first pair of optical elements OE51, OE52 and the second pair of optical elements OE61, OE62 may be located on the same side of object OB-R or the plane PO of the object. The first pair of optical elements OE51, OE52 may be located on the first side of the central axis CA of the object, and the second pair of optical elements OE61, OE62 may be located on the second side of the central axis CA of the object. The first pair of optical elements OE51, OE52 may be configured to receive the input radiation beam RB-R and guide the radiation beam RB-R toward the object OB-R for illumination. The second pair of optical elements OE61, OE62 may be configured to focus at least a portion of the radiation beam RB-R' coming from the object OB-R (in this case, a portion of the radiation beam RB-R' reflected from the object OB-R) and guide at least a portion of the radiation beam RB-R' coming from the object OB-R, for example, along a fixed optical path.

[0077]

[0076] Figure 5A schematically shows the optical arrangement 500 in the fourth time instance T=T4 during scan-up exposure. During scan-up exposure, the first moving reflector OE51 and the second moving reflector OE61 move at speed V OE51 and V OE61 It may be possible for them to operate to move simultaneously. The velocity V of the first moving reflector OE51 OE51 and the speed V of the second moving reflector OE61 OE61 The amplitude or velocity may be the same, but the direction may differ (see arrow in Figure 5A). Similar to the exemplary scenario shown in Figure 4A, the first moving reflector OE51 and the second moving reflector OE61 may move from their respective starting positions (e.g., default positions) to their respective ending positions (e.g., predetermined intermediate positions). The movement of the first moving reflector OE51 may cause the input radiation beam RB-R to scan a region of object OB-R in a first direction (right to left). Simultaneously, the object table assembly OTA moves at velocity V OB-R Similarly, it may be possible to operate along the X-axis, but in a second direction (left to right) opposite to the first direction. The scan speed V of the input emission beam RB-R. RB-R The speed of the first moving reflector OE51 may satisfy the following relationship: |V RB-R |=|V OE51 |·cos(α) [4] Here, α is the velocity V of the first moving reflector OE51. OE51 This refers to the angle between the direction and the X-axis.

[0078]

[0077] To ensure that the reflected radiation beam RB-R' follows a fixed optical path after leaving the optical scan assembly OSA-R, the velocity V of the second moving reflector OE61 is set. OE61 and the scan speed V of the input radiation beam RB-R RB-R The following relationships may be satisfied. |V RB-R |=|V OE61 |·cos(β) [5] Here, β is the velocity V of the second moving reflector.OE61 This refers to the angle between the direction and the X-axis. In some examples, the two angles α and β may be different, but in other examples they may be equal.

[0079]

[0078] The optical scan assembly OSA-R may include additional optical elements (e.g., one or more reflectors). Such additional optical elements may be placed between two of the first pair of optical elements OE51, OE52 and / or the second pair of optical elements OE61, OE62 and may be used for beam control (e.g., beam shaping, beam steering, etc.). In one embodiment, the additional optical elements may be positioned to ensure that the focused portions of the input radiated beam RB-R and the reflected radiated beam RB-R' incident on the object OB-R are not substantially affected by the scanning operation.

[0080]

[0079] Figure 5B schematically shows the optical arrangement 500 at the fifth time instance T=T5, which is the end of the scan-up exposure. At this point, the first moving reflector OE51 and the second moving reflector OE61 may both be stopped at their respective end positions (e.g., predetermined intermediate positions), as in the scenario shown in Figure 4B, and are waiting for a command to perform the next exposure (or scan-down exposure).

[0081]

[0080] In scandown exposure (not shown), the first moving reflector OE51 and the second moving reflector OE61 may be configured to return to their respective starting positions, so that the input radiation beam RB-R scans the region of object OB-R in a second direction (left to right). At the same time, the object table assembly OTA moves at velocity V OB-R Similarly, it may be possible to move along the X-axis, but in a first direction (right to left).

[0082]

[0081] According to one aspect of the present disclosure, a method is provided for improving the throughput of a lithography apparatus, comprising illuminating patterning devices OB, OB-R with radiation beams RB, RB-R, moving the radiation beams RB, RB-R in a first direction relative to the patterning devices OB, OB-R, and moving the patterning devices OB, OB-R in a second direction opposite to the first direction within the planar PO of the patterning devices while the patterning devices are illuminated with radiation beams RB, RB-R, wherein the patterning devices OB, OB-R and the radiation beams RB, RB-R are moved simultaneously while the patterning devices OB, OB-R are illuminated with radiation beams RB, RB-R, and using at least a portion of the radiation beams RB', RB-R' coming from the patterning devices to expose at least one target portion on a substrate (as shown, for example, in Figure 1).

[0083]

[0082] According to one aspect of the present invention, a stage system suitable for placement and use in an exposure apparatus is provided, comprising: a first optical element OE11 positioned on a first side of an object plane PO on which an object to be illuminated OB can be placed, and configured to guide an illumination beam RB to the object plane PO; and a second optical element OE21 positioned on a second side of the object plane PO, and configured to guide the illumination beam RB' after it has passed through the object plane PO, wherein the first and second optical elements OE11 and OE21 are configured to move (simultaneously) in opposite directions opposite to the direction of movement of the object OB during the illumination period of the object OB.

[0084]

[0083] The first optical element OE11, the second optical element OE21, and the object OB may each be actuated and moved by an actuator. The first and second optical elements OE11 and OE21 may be actuated and moved by one identical actuator.

[0085]

[0084] The movement, direction, and speed of the first optical element OE11, the second optical element OE21, and the object OB may be controlled by a controller. The controller may be an external control unit or a control unit located within the exposure apparatus.

[0086]

[0085] The concepts described herein are similarly applicable to single-stage lithography apparatuses or scanners used in combination with a standalone alignment tool or alignment station, in which case the alignment station is the measurement side and the scanner is the exposure side. Thus, lithography apparatus configurations may include dual-stage lithography apparatuses or single-stage lithography apparatuses with a standalone alignment station.

[0087]

[0086] Although specific embodiments of the present invention have been described above, it will be understood that the present invention can be carried out in ways other than those described.

[0088]

[0087] While the embodiments of the present invention have been specifically described above in relation to photolithography, it will be understood that the present invention may be used for other purposes and is not limited to photolithography where permitted by context.

[0089]

[0088] Where permitted by context, embodiments of the present invention may be implemented in hardware, firmware, software, or any combination thereof. Embodiments of the present invention may also be implemented as instructions stored in a machine-readable medium that can be read and executed by one or more processors. A machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device). For example, a machine-readable medium may include read-only memory (ROM), random access memory (RAM), magnetic storage media, optical storage media, flash memory devices, propagating signals of electrical, optical, acoustic or other forms (e.g., carrier waves, infrared signals, digital signals, etc.), and others. Furthermore, firmware, software, routines, and instructions may be described herein as performing specific actions. However, such descriptions are merely for convenience, and it should be understood that such actions actually originate from a computing device, processor, controller, or other device that performs the firmware, software, routines, instructions, etc., and that in the process, actuators or other devices may interact with the material world.

[0090]

[0089] As used herein, the terms “radiation” and “beam” encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g., having wavelengths of 365 nm, 355 nm, 248 nm, 193 nm, 157 nm, or 126 nm or greater), extreme ultraviolet (EUV) radiation (e.g., having wavelengths in the range of 1 to 100 nm), and particle beams such as ion beams and electron beams.

[0091]

[0090] The term “lens” may, depending on the context, refer to one or a combination of various types of (equivalent) optical components, including refractive, reflective, magnetic, electromagnetic, and electrostatic optical components. Reflective components are likely to be used in devices operating in the UV and / or EUV region.

[0092]

[0091] Aspects of the present invention are described in the following clauses. 1. An optical arrangement for use in an exposure apparatus, The system comprises an object table assembly configured to hold and move an object within the object's plane, and an optical scanning assembly configured to receive a radiation beam, guide the radiation beam toward the object to illuminate at least a portion of the object within the object's plane, and then focus at least a portion of the radiation beam coming from the object. An optical arrangement that allows at least a portion of the object table assembly and the optical scan assembly to move simultaneously while the object is illuminated by the radiation beam, such that the optical scan assembly moves the radiation beam in a direction substantially opposite to the direction of movement of the object table assembly, thereby scanning the radiation beam over at least a portion of the object. 2. The optical arrangement described in Clause 1, wherein at least a portion of the radiation beam coming from the object includes a portion of the radiation beam that has passed through the object. 3. The optical arrangement described in Clause 2, wherein the optical scanning assembly is configured to direct the emitted beam toward an object at a normal incidence angle. 4. The optical arrangement described in Clause 1, wherein at least a portion of the radiation beam coming from the object includes a portion of the radiation beam reflected from the object. 5. The optical arrangement according to any one of clauses 1 to 4, wherein the object table assembly comprises object supports for holding objects and at least one positioner for positioning the object supports. 6. The optical arrangement according to Clause 5, wherein at least one positioner is configured to move the object support along a first axis which is both in the plane of the object and a second axis which is perpendicular to the first axis. 7. The optical arrangement according to any one of the clauses 1 to 6, wherein the optical scanning assembly comprises at least a first pair of optical elements configured to receive a radiation beam and guide the radiation beam toward an object for illumination, and at least a first optical element of the first pair of optical elements is operable to move relative to a second optical element of the first pair of optical elements in order to move the radiation beam. 8. The optical arrangement according to Clause 7, wherein the first optical element of the first pair of optical elements is movable, and the second optical element of the first pair of optical elements is fixed. 9. The optical arrangement according to Clause 7 or 8, comprising at least a second pair of optical elements configured to focus at least a portion of a radiation beam coming from an object and to guide at least a portion of a radiation beam coming from an object, wherein at least a first optical element of the second pair of optical elements is operable to move relative to a second optical element of the second pair of optical elements. 10. The optical arrangement according to Clause 9, wherein the first optical element of the second pair of optical elements is movable, and the second optical element of the second pair of optical elements is fixed. 11. The optical arrangement according to Clause 9 or 10, wherein the second pair of optical elements is configured to guide at least a portion of the radiation beam coming from the object along a fixed optical path. 12. The optical arrangement according to any one of the clauses 9 to 11, wherein the first pair of optical elements is located on a first side of the object's plane and the second pair of optical elements is located on a second side of the object's plane, or the first pair of optical elements is located on a first side of the object's central axis and the second pair of optical elements is located on a second side of the object's central axis. 13. An optical arrangement according to any one of clauses 9 to 12, wherein the first optical element of the first pair of optical elements and the first optical element of the second pair of optical elements move simultaneously to change the distance between the first optical element of each of the first pair of optical elements and the second optical element of each of the first pair of optical elements and the second optical element of each of the first pair of optical elements and the second optical element. 14. An optical arrangement according to any one of the clauses 7 to 13, wherein the first optical element and / or the second optical element of the first pair of optical elements and / or the second optical element include a reflector. 15. The optical arrangement according to Clause 14, wherein one or both of the first optical element pair and / or the second optical element pair each have parallel reflective surfaces. 16. An optical arrangement as described in any of Clauses 1 to 15, wherein the object includes a patterning device. 17. The optical arrangement according to Clause 16, wherein the patterning device is a mask containing a circuit pattern to be transferred to a target portion on a substrate. 18. A lithography apparatus having an optical arrangement as described in any of clauses 1 to 17. 19. At least one board support for supporting the board, The lithography apparatus according to Clause 18, further comprising a projection lens assembly configured to receive and guide at least a portion of a radiation beam focused by an optical scanning assembly onto a substrate for exposure of at least one target portion on a substrate. 20. A method for exposing a circuit pattern to at least one target portion on a substrate, Illuminating patterning devices with a radiation beam, While the patterning device is illuminated by a radiation beam, the patterning device is moved in a first direction within the plane of the patterning device, and This includes moving the radiation beam in a second direction opposite to the first direction relative to the patterning device, such that the patterning device and the radiation beam are moved simultaneously while the patterning device is illuminated by the radiation beam. A method for exposing a circuit pattern to at least one target portion on a substrate using at least a portion of the radiation beam coming from a patterning device. 21. The method according to Clause 20, wherein at least a portion of the radiated beam coming from the patterning device includes a portion of the radiated beam that has passed through the patterning device. 22. The method according to clause 21, wherein the patterning device is illuminated at the normal incidence angle. 23. The method according to Clause 20, wherein at least a portion of the radiated beam coming from the patterning device includes a portion of the radiated beam reflected from the patterning device. 24. The method according to any one of the clauses 20 to 23, wherein at least a portion of the radiated beam coming from the patterning device is guided along a fixed optical path. 25. A computer program having program instructions that can be operated to perform any of the methods described in clauses 20 to 24 when run on a suitable device. 26. A non-temporary computer program carrier equipped with the computer programs specified in Clause 25. 27. A processing system comprising a processor and a storage device having a computer program according to clause 26. 28. The optical arrangement according to Clause 10, further comprising at least a first actuator configured to move a first optical element of a first pair of optical elements and a first optical element of a second pair of optical elements, and a second actuator configured to move an object table assembly. 29. A stage system for an exposure apparatus, A first optical element positioned on a first side of an object plane on which an object to be illuminated can be placed, and configured to guide an illumination beam onto the object plane, A second optical element is positioned on the second side of the object plane and configured to guide the illumination beam after it has passed through the object plane, A stage system in which the first and second optical elements are configured to move simultaneously in opposite directions to the direction of movement of the object during the illumination period of the object. 30. The stage system according to Clause 29, wherein multiple actuators are arranged to actuate and move a first optical element, a second optical element, and an object.

[0093]

[0092] The breadth and scope of the present invention should not be limited by any of the exemplary embodiments described above, but should be defined solely in accordance with the appended claims and their equivalents.

Claims

1. An optical arrangement for use in an exposure apparatus, An object table assembly configured to hold and move an object within the plane of the object, The system comprises an optical scanning assembly configured to receive a radiation beam, direct the radiation beam toward the object to illuminate at least a portion of the object in the object plane, and then focus at least a portion of the radiation beam coming from the object, The optical scanning assembly comprises a first optical element positioned on a first side of the object plane and configured to guide the radiation beam to the object plane, and a second optical element positioned on a second side of the object plane and configured to guide the radiation beam after it has passed through the object plane, wherein the first and second optical elements are configured to move simultaneously. An optical arrangement in which the object table assembly and at least a portion of the optical scanning assembly are operable to move simultaneously while the object is illuminated by the radiation beam, such that the optical scanning assembly moves the radiation beam in a direction substantially opposite to the direction of movement of the object table assembly, thereby scanning the radiation beam over at least a portion of the object.

2. The optical arrangement according to claim 1, wherein at least a portion of the radiation beam coming from the object includes a portion of the radiation beam that has passed through the object.

3. The optical arrangement according to claim 2, wherein the optical scanning assembly is configured to guide the radiation beam toward the object at a normal incidence angle.

4. The optical arrangement according to any one of claims 1 to 3, wherein the first and second optical elements are configured to move simultaneously in opposite directions opposite to the direction of movement of the object during the illumination period of the object.

5. The optical arrangement according to any one of claims 1 to 4, wherein the object table assembly comprises an object support for holding the object and at least one positioner for positioning the object support.

6. The optical arrangement according to claim 5, wherein at least one positioner is configured to move the object support along a first axis which lies in the object plane and a second axis which is perpendicular to the first axis.

7. The optical arrangement according to any one of claims 1 to 6, wherein the optical scanning assembly comprises at least a first pair of optical elements configured to receive the radiation beam and guide the radiation beam toward the object for illumination, and at least a first optical element of the first pair of optical elements is operable to move relative to a second optical element of the first pair of optical elements in order to move the radiation beam.

8. The optical arrangement according to claim 7, wherein the first optical element of the first pair of optical elements is movable, and the second optical element of the first pair of optical elements is fixed.

9. The optical arrangement according to claim 8, comprising at least a second pair of optical elements configured to focus at least a portion of the radiation beam coming from the object and to guide at least a portion of the radiation beam coming from the object, wherein at least a first optical element of the second pair of optical elements is operable to move relative to a second optical element of the second pair of optical elements.

10. The optical arrangement according to claim 9, wherein the first optical element of the second pair of optical elements is movable, and the second optical element of the second pair of optical elements is fixed.

11. The optical arrangement according to claim 10, further comprising at least a first actuator configured to move the first optical element of the first optical element pair and the first optical element of the second optical element pair, and a second actuator configured to move the object table assembly.

12. A lithography apparatus having the optical arrangement described in any one of claims 1 to 11.

13. At least one board support for supporting the board, The lithography apparatus according to claim 12, further comprising: a projection lens assembly configured to receive and guide at least a portion of the radiation beam focused by the optical scanning assembly onto the substrate in order to expose at least one target portion on the substrate.

14. A method for exposing a circuit pattern on at least one target portion on a substrate, Illuminating patterning devices with a radiation beam, While the patterning device is illuminated by the radiation beam, move the patterning device, which is positioned in the object plane of the object table assembly, in a first direction within the plane of the patterning device, and The method includes using an optical scanning assembly to move the radiation beam in a second direction opposite to the first direction relative to the patterning device, wherein the patterning device and the radiation beam are moved simultaneously while the patterning device is illuminated by the radiation beam. A method of exposing the circuit pattern to the at least one target portion on the substrate using at least a portion of the radiation beam coming from the patterning device.

15. The method according to claim 14, wherein at least a portion of the radiation beam coming from the patterning device includes a portion of the radiation beam that has passed through the patterning device.

Images