Method for pulling up doped silicon single crystals

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A computer simulation method with adjusted boundary conditions and an artificial heat source addresses the challenges of growing high-dopant-level silicon crystals, enhancing yield and reducing dislocations by predicting and controlling crystallization rates and dopant distribution.

JP2026524692APending Publication Date: 2026-07-23SILTRONIC AG

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Patent Information

Authority / Receiving Office: JP · JP
Patent Type: Applications
Current Assignee / Owner: SILTRONIC AG
Filing Date: 2024-07-08
Publication Date: 2026-07-23

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Abstract

A method for crystallizing a single crystal from a molten material consisting of silicon and a dopant according to the Czochralski method, [Math 1] TIFF2026524692000020.tif97167 method.

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