Coating layer structure and method for manufacturing the same
A multi-layer ceramic coating process addresses the issue of surface defects on chamber liners by ensuring a smooth and dense surface, enhancing plasma cleaning and process stability in plasma etching.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- JIANGSU LEUVEN INSTR CO LTD
- Filing Date
- 2024-07-19
- Publication Date
- 2026-07-29
AI Technical Summary
Conventional inductively coupled plasma etching processes face challenges due to the accumulation of defects and process by-products on chamber inner liners, which are not smooth and flat, affecting the stability and yield of the plasma etching process.
A coating layer structure is manufactured by forming multiple ceramic coating layers on a substrate, using methods like atmospheric plasma spraying, suspension plasma spraying, and chemical vapor deposition, to achieve a smooth, dense, and crack-free surface, reducing roughness and porosity.
The smooth and dense coating layer structure enhances the plasma cleaning effect, improving the stability and yield of the plasma etching process by effectively removing process by-products from the chamber inner liner.
Smart Images
Figure 2026525371000001_ABST
Abstract
Description
Cross-reference
[0001] This application claims priority based on a Chinese patent application filed with the China National Intellectual Property Administration on October 7, 2023, with an application number of 202311283852.1 and an invention title of "Coating Layer Structure and Its Manufacturing Method", and the entire content thereof is incorporated herein by reference.
Technical Field
[0002] This application relates to the technical field of semiconductors, and particularly to a coating layer structure and its manufacturing method.
Background Art
[0003] Conventional inductively coupled plasma etching processes (ICP etching, Inductive coupled plasma etching) are achieved by alternately performing wafer etching and subsequent chamber in-situ cleaning or no-wafer clean (NWC).
[0004] Among them, the purpose of plasma cleaning is to remove defects or deposited process by-products generated in the chamber after the plasma etching of the previous wafer. As the etching process progresses over a long time, the deposition of defects and process by-products increases more and more, making it difficult to process the next wafer in a stable chamber environment. Therefore, it is necessary to perform plasma cleaning after each wafer etching to remove the deposits in the chamber.
[0005] However, the effectiveness and cleaning effect of plasma cleaning also depend on the surface state of the coating layer structure of the workpiece in the chamber. Generally speaking, the smoother and flatter the surface of the coating layer structure of the workpiece, the easier it is for process by-products to be removed by plasma cleaning.
[0006] However, the surfaces of chamber inner liners currently in use are often not smooth and flat, and the high levels of surface defects and roughness seriously affect the stability and yield of the plasma etching process. [Overview of the project]
[0007] This summary of the present invention is provided to briefly introduce the concept of the invention, which will be described in detail in the following specific embodiments. This summary is not intended to identify any important or essential features of the technical solution for which protection is claimed, nor is it intended to limit the scope of the technical solution for which protection is claimed.
[0008] The object of this application is to provide a coating layer structure and a method for manufacturing the same, which have a smooth, dense surface free from defects such as cracks, and which can improve the stability and yield of the plasma etching process.
[0009] To achieve the above objectives, this application provides the following technical solutions.
[0010] According to the first aspect, one embodiment of this application provides a method for manufacturing a coating layer structure applied to a plasma device, Providing the base material, A method for manufacturing a coating layer structure is provided, which includes forming multiple ceramic coating layers on one side of the substrate, wherein the roughness and density gradually decrease from the side closer to the substrate to the side further away from the substrate.
[0011] In one possible embodiment, if the multiple ceramic coating layers include a first ceramic coating film, a second ceramic coating film, and a third ceramic coating film, forming the multiple ceramic coating layers on one side of the substrate is possible. A first ceramic coating film is formed on the substrate using an atmospheric plasma spraying method or a vapor deposition method. Using a suspension plasting method, a second ceramic coating film is formed on the side of the first ceramic coating film that is away from the substrate, A method for manufacturing a coating layer structure is provided, which includes forming a third ceramic coating film on the side of the second ceramic coating film away from the substrate using chemical vapor deposition, physical vapor deposition, plasma-enhanced chemical vapor deposition, or plasma-enhanced physical vapor deposition.
[0012] In one possible embodiment, the substrate material includes aluminum or an aluminum alloy.
[0013] In one possible embodiment, the material of the first ceramic coating film includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium-aluminum garnet.
[0014] In one possible embodiment, the material for the second ceramic coating film includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium-aluminum garnet.
[0015] In one possible embodiment, the material for the third ceramic coating film includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium-aluminum garnet.
[0016] In one possible embodiment, the second ceramic coating film includes a first ceramic subcoating film and a second ceramic subcoating film.
[0017] In one possible embodiment, the first ceramic coating film has a thickness of 50 μm or more and 500 μm or less.
[0018] In one possible embodiment, the second ceramic coating film has a thickness of 50 μm or more and 500 μm or less.
[0019] In one possible embodiment, the third ceramic coating film has a thickness of 2 μm or more and 200 μm or less.
[0020] In one possible embodiment, the first ceramic coating film has a density of 3% or more and 8% or less.
[0021] In one possible embodiment, the second ceramic coating film has a density of 3% or less.
[0022] In one possible embodiment, the third ceramic coating film has a density of 0.1% or less.
[0023] In one possible embodiment, the first ceramic coating film has a roughness of 3 μm or more and 8 μm or less.
[0024] In one possible embodiment, the second ceramic coating film has a roughness of 1.0 μm or more and 4 μm or less.
[0025] In one possible embodiment, the third ceramic coating film has a roughness of 1 μm or less.
[0026] In one possible embodiment, the aluminum alloy contains copper element, silicon element, iron element, manganese element, magnesium element, zinc element, chromium element and / or titanium element.
[0027] In one possible embodiment, the aluminum alloy is a 6061 aluminum alloy plate.
[0028] According to a second aspect, in an embodiment of the present application, it is applied to a plasma device including a plasma etching device and a plasma coating device, and is a coating layer structure manufactured by the method described above, a base, A coating layer structure is provided that includes a plurality of ceramic coating layers disposed on one side of the base, the roughness and density of which gradually decrease from the side closer to the base to the side farther from the base.
[0029] In one possible embodiment, the plurality of ceramic coating layers includes a first ceramic coating film, a second ceramic coating film, and a third ceramic coating film. The materials of the first ceramic coating film, the second ceramic coating film, and the third ceramic coating film include aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.
Advantages of the Invention
[0030] Compared with the prior art, the embodiments of the present application have the following beneficial effects: According to one embodiment of this application, a coating layer structure and a method for manufacturing the same are provided. The method includes providing a substrate, forming a first ceramic coating film on the substrate using an atmospheric plasma spraying method or vapor deposition method, forming a second ceramic coating film on the side of the first ceramic coating film away from the substrate using a suspension plasma spraying method, and forming a third ceramic coating film on the side of the second ceramic coating film away from the substrate using a chemical vapor deposition method or physical vapor deposition method. In this application, the first ceramic coating film manufactured by the atmospheric plasma spraying method or vapor deposition method has good interfacial bonding strength and therefore readily bonds with the substrate. The second ceramic coating film manufactured by the suspension plasma spraying method can reduce the roughness and porosity of the coating layer structure. Furthermore, the third ceramic coating film manufactured by the chemical vapor deposition method or physical vapor deposition method can further reduce defects such as cracks in the coating layer structure. Therefore, a surface having a smooth, dense coating layer structure free of crack defects can be obtained. Applying such a smooth, dense, and crack-free coating layer structure to the chamber inner liner of a plasma apparatus contributes to improving the plasma cleaning effect on process by-products adhering to the chamber inner liner during the plasma etching process, thereby enhancing the stability and yield of the plasma etching process. [Brief explanation of the drawing]
[0031] To more clearly illustrate the technical solutions provided by the embodiments of this application, the drawings necessary for describing the embodiments are briefly introduced below. As is evident, the drawings described below represent only a few embodiments of this application. Those skilled in the art can derive other drawings from these drawings without expending the necessary work to demonstrate inventive step.
[0032] The above and other features, advantages, and aspects of various embodiments of this disclosure will become clearer when combined with the drawings and the following specific embodiments. Throughout the drawings, identical or similar drawing symbols indicate identical or similar components. However, it should be understood that the drawings are for illustrative purposes only, and the parts and components therein are not necessarily drawn to scale.
[0033] [Figure 1] Figure 1 is a flowchart of a method for manufacturing a coating layer structure according to one embodiment of this application. [Figure 2] Figure 2 is a schematic diagram showing the cross-sectional structure of a coating layer structure according to one embodiment of this application. [Modes for carrying out the invention]
[0034] To facilitate understanding of the above-mentioned objectives, features, and advantages of this application, specific embodiments of this application will be described in detail below with reference to the drawings.
[0035] The following description includes many specific details to fully understand this application. However, this application can also be implemented in ways other than those described herein. Those skilled in the art can implement it in similar ways without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments shown below.
[0036] As described in related technologies, conventional inductively coupled plasma etching processes are achieved by alternating between wafer etching and subsequent in-situ cleaning or no-wafer cleaning of the chamber.
[0037] In this context, the purpose of plasma cleaning is to remove defects or accumulated process by-products that have formed in the chamber after the plasma etching of the previous wafer. As the etching process progresses over a long period of time, the accumulation of defects and process by-products increases, making it difficult to process the next wafer in a stable chamber environment. Therefore, plasma cleaning is necessary after each wafer etching to remove chamber deposits.
[0038] However, the effectiveness and cleaning effect of plasma cleaning also depends on the surface condition of the coating layer structure of the workpiece inside the chamber. Generally speaking, the smoother and flatter the surface of the coating layer structure of the workpiece, the easier it is for process byproducts to be removed by plasma cleaning.
[0039] However, the surfaces of chamber inner liners currently in use are not always smooth and flat, often resulting in surface defects and reduced roughness, which seriously impacts the stability and yield of the plasma etching process.
[0040] In view of the above technical challenges, one embodiment of this application provides a coating layer structure and a method for manufacturing the same. This method includes providing a substrate, forming a first ceramic coating film on the substrate using an atmospheric plasma spraying method or vapor deposition method, forming a second ceramic coating film on the side of the first ceramic coating film away from the substrate using a suspension plasma spraying method, and forming a third ceramic coating film on the side of the second ceramic coating film away from the substrate using a chemical vapor deposition method or physical vapor deposition method. The first ceramic coating film manufactured by the atmospheric plasma spraying method or vapor deposition method of this application has good interfacial bonding strength and therefore readily bonds to the substrate. The second ceramic coating film manufactured by the suspension plasma spraying method can reduce the roughness and porosity of the coating layer structure. Furthermore, the third ceramic coating film manufactured by a chemical vapor deposition method or physical vapor deposition method can further reduce defects such as cracks in the coating layer structure. Therefore, a smooth, dense, and crack-free coating layer structure is obtained. Applying such a smooth, dense, and crack-free coating layer structure to the chamber inner liner of a plasma apparatus contributes to improving the plasma cleaning effect on process by-products adhering to the chamber inner liner by plasma cleaning in the plasma etching process, thereby increasing the stability and yield of the plasma etching process.
[0041] To better understand the technical solutions and effects of this application, specific embodiments will be described in detail below with reference to the drawings. Exemplary Method
[0042] Referring to Figure 1, Figure 1 is a flowchart of a method for manufacturing a coating layer structure according to one embodiment of this application. This method includes the following steps.
[0043] S101: Provides the base material.
[0044] In one embodiment of this application, with reference to Figure 2, a schematic diagram showing a coating layer structure according to one embodiment of this application is provided.
[0045] Specifically, the material of the substrate 10 includes aluminum. Optionally, the material of the substrate 10 includes an aluminum alloy. The aluminum alloy according to one embodiment of this application may contain copper, silicon, iron, manganese, magnesium, zinc, chromium, and / or titanium elements. In one embodiment of this application, aluminum or an aluminum alloy is used as the substrate 10, and it is relatively lightweight.
[0046] In one possible embodiment, the aluminum alloy according to one embodiment of this application may be a 6061 aluminum alloy sheet 6061T. That is, in one embodiment of this application, the main alloying elements in the 6061 aluminum alloy sheet are magnesium and silicon, and it has moderate strength, good corrosion resistance, weldability and excellent oxidation effect.
[0047] As an option, in one embodiment of this application, the surface of the substrate 10 can be subjected to hard anodizing. This hard anodizing treatment forms a hard oxide film on the surface of the substrate 10 that has wear resistance and corrosion resistance, thereby increasing the surface hardness and durability of the substrate 10.
[0048] Next, multiple ceramic coating layers are formed on one side of the substrate 10. The roughness and density of the multiple ceramic coating layers gradually decrease from the side closer to the substrate 10 to the side further away from the substrate 10. In this way, in one embodiment of the present application, by gradually reducing the roughness and density of the multiple ceramic coating layers, the surface can be finished to be smooth and dense.
[0049] Optionally, the multiple ceramic coating layers according to one embodiment of this application may include a first ceramic coating film 11, a second ceramic coating film 12, and a third ceramic coating film 13. Forming multiple ceramic coating layers on one side of the substrate 10 may specifically include the following steps S102 to S104.
[0050] S102: A first ceramic coating film is formed on the substrate using an atmospheric plasma spraying method or a vapor deposition method.
[0051] In one embodiment of this application, a first ceramic coating film 11 can be formed on a substrate 10 using atmospheric plasma spraying (APS) or evaporation.
[0052] Optionally, the material of the first ceramic coating film 11 may include aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium-aluminum garnet. Optionally, the thickness of the first ceramic coating film 11 may be between 50 μm and 500 μm. Optionally, the density of the first ceramic coating film 11 may be between 3% and 8%. Optionally, the roughness of the first ceramic coating film may be between 3 μm and 8 μm.
[0053] Specifically, in one embodiment of the present invention, the first ceramic coating film 11 formed using atmospheric plasma spraying or vapor deposition exhibits good interfacial bonding strength, although it has a certain degree of density and structural defects, and readily bonds with the substrate 10 or a subsequently formed coating layer. Furthermore, the first ceramic coating film 11 thus formed has a fast deposition rate and low cost.
[0054] However, the first ceramic coating film 11 formed using atmospheric plasma spraying or vapor deposition has a high surface roughness and high porosity, making it difficult to completely remove the product deposited in the pores of the coating film by plasma cleaning. If this deposit persists for a long period, it may affect the chamber processing process and the stability of the particles.
[0055] In other words, if only the first ceramic coating film 11 is formed due to limitations in the thin film deposition process, the surface roughness and porosity will be high, making it impossible to provide a dense, smooth, and crack-free coating film surface, which may adversely affect the cleaning effect of plasma cleaning in the plasma etching process.
[0056] Accordingly, in one embodiment of this application, a second ceramic coating film 12 is subsequently formed.
[0057] S103: A second ceramic coating film is formed on the side of the first ceramic coating film that is away from the substrate using a suspension plasma spraying method.
[0058] In one embodiment of this application, a second ceramic coating film 12 can be formed on the side of the first ceramic coating film 11 that is away from the substrate 10 using suspension plasma spraying (SPS).
[0059] Specifically, in one embodiment of this application, the second ceramic coating film 12 formed using a suspension plasma spraying method may be a ceramic coating with reduced density and roughness, and with resistance to plasma etching.
[0060] Optionally, the material of the second ceramic coating film 12 may include aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium-aluminum garnet. The thickness of the second ceramic coating film 12 may be equal to or the same as the thickness of the first ceramic coating film 11, and the surface roughness and porosity of the second ceramic coating film 12 may be lower than those of the first ceramic coating film 11.
[0061] Optionally, in one embodiment of this application, a second ceramic coating film 12, including a first ceramic subcoating film 121 and a second ceramic subcoating film 122, may be provided to further reduce the roughness and density of the coating layer structure.
[0062] Optionally, the thickness of the second ceramic coating film 12 may be between 50 μm and 500 μm. The density of the second ceramic coating film 12 may be 3% or less. The roughness of the second ceramic coating film 12 may be between 1.0 μm and 4 μm.
[0063] Although the surface of the two-layer coating film, consisting of a first ceramic coating film 11 and a second ceramic coating film 12, has low roughness (Ra) and porosity, defects such as cracks still exist on the surface of the second ceramic coating film 12. Therefore, there is a risk that process by-products induced by cracks will accumulate on the surface of the inner liner protected by the two-layer coating film consisting of the first ceramic coating film 11 and the second ceramic coating film 12, which may adversely affect the cleaning effect on the chamber by the plasma cleaning process.
[0064] Accordingly, in one embodiment of this application, a third ceramic coating film 13 is subsequently formed.
[0065] S104: A third ceramic coating film is formed on the side of the second ceramic coating film that is away from the substrate, using chemical vapor deposition, physical vapor deposition, plasma-enhanced chemical vapor deposition, or plasma-enhanced physical vapor deposition.
[0066] Specifically, in one embodiment of this application, a third ceramic coating film 13 can be formed on the side of the second ceramic coating film 12 that is away from the substrate 10, using chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma-enhanced chemical vapor deposition, or plasma-enhanced physical vapor deposition.
[0067] Specifically, in one embodiment of this application, the third ceramic coating film 13 formed using chemical vapor deposition or physical vapor deposition can be a plasma etching resistant ceramic coating having a smooth, dense, and defect-free surface.
[0068] Optionally, the material of the third ceramic coating film 13 may include aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium-aluminum garnet. Optionally, the thickness of the third ceramic coating film 13 may be between 2 μm and 200 μm. Optionally, the density of the third ceramic coating film 13 may be 0.1% or less. Optionally, the roughness of the third ceramic coating film may be 1 μm or less.
[0069] Since the first ceramic coating film 11, the second ceramic coating film 12, and the third ceramic coating film 13 according to one embodiment of this application are made from a single material, the uniformity of the material of each coating film is ensured, and the occurrence of peeling of the coating film is avoided.
[0070] According to one embodiment of this application, the third ceramic coating film 13 is thin, ensuring a smooth and defect-free surface, preventing the occurrence of cracks in the third ceramic coating film 13, and improving the quality of the resulting third ceramic coating film 13.
[0071] A third ceramic coating film 13 is further laminated on top of the second ceramic coating film 12. Ceramic coating films such as yttrium oxide, manufactured by chemical vapor deposition or physical vapor deposition, have a dense structure and are free from defects such as cracks. Furthermore, when deposited on the surface of the second ceramic coating film 12, the surface roughness of the coating film can be further reduced (e.g., to less than 1 μm), thus eliminating the porosity and cracks of the second ceramic coating film 12. Therefore, by sequentially depositing the first ceramic coating film 11 / second ceramic coating film 12 / third ceramic coating film 13 on the surface of an aluminum workpiece (e.g., an inner liner) in a plasma etching process, a smooth, dense surface free from crack defects can be obtained, contributing to improved plasma cleaning of the chamber during the plasma etching process.
[0072] Furthermore, when the third ceramic coating film 13 is formed by directly depositing it onto the surface of the first ceramic coating film 11, the third ceramic coating film 13 is relatively thin, resulting in a high surface roughness (e.g., 5-7 μm) of the inner liner protected by the formed first ceramic coating film 11 / third ceramic coating film 13. This is not significantly different from the roughness of the first ceramic coating film 11 (3-8 μm), which may adversely affect the cleaning effect on the chamber by plasma cleaning during the plasma etching process.
[0073] Accordingly, in one embodiment of this application, by further depositing a third ceramic coating film 13 on the second ceramic coating film 12 to gradually improve the surface roughness of the coating film, and applying the resulting smooth, dense, and crack-free coating layer structure to the chamber inner liner of a plasma apparatus, the cleaning effect of plasma cleaning on process by-products adhering to the chamber inner liner can be enhanced.
[0074] According to one embodiment of this application, a coating layer structure and a method for manufacturing the same are provided. The method includes providing a substrate, forming a first ceramic coating film on the substrate using an atmospheric plasma spraying method or vapor deposition method, forming a second ceramic coating film on the side of the first ceramic coating film away from the substrate using a suspension plasma spraying method, and forming a third ceramic coating film on the side of the second ceramic coating film away from the substrate using a chemical vapor deposition method or physical vapor deposition method. The first ceramic coating film manufactured by the atmospheric plasma spraying method or vapor deposition method of this application has good interfacial bonding strength and therefore readily bonds with the substrate. The second ceramic coating film manufactured by the suspension plasma spraying method can reduce the roughness and porosity of the coating layer structure. Furthermore, the third ceramic coating film manufactured by a chemical vapor deposition method or physical vapor deposition method can further reduce defects such as cracks in the coating layer structure. Therefore, a smooth, dense, and crack-free surface of the coating layer structure can be obtained. Applying such a smooth, dense, and crack-free coating layer structure to the chamber inner liner of a plasma apparatus contributes to improving the plasma cleaning effect of process by-products adhering to the chamber inner liner during the plasma etching process, thereby increasing the stability and yield of the plasma etching process. Exemplary structure
[0075] According to one embodiment of this application, a coating layer structure manufactured by the method described above is provided, applicable to a plasma apparatus comprising a plasma etching apparatus and a plasma coating apparatus. The structure is, The device comprises a base 10 and multiple layers of ceramic coating arranged on one side of the base 10. However, the roughness and density of the multiple layers of ceramic coating gradually decrease from the side closer to the base 10 to the side further away from the base 10.
[0076] In one possible embodiment, the multiple ceramic coating layers may include a first ceramic coating film 11, a second ceramic coating film 12, and a third ceramic coating film 13. Referring to Figure 2, this is a schematic diagram showing a cross-sectional structure of a coating layer structure according to one embodiment of the present application, manufactured by the method described above. This coating layer structure is Base coat 10, A first ceramic coating film 11 is placed on one side of the substrate 10, A second ceramic coating film 12 is positioned on the side of the first ceramic coating film 11 that is away from the substrate 10, The device comprises a third ceramic coating film 13 positioned on the side of the second ceramic coating film 12 that is away from the substrate 10.
[0077] In one possible embodiment, the second ceramic coating film 12 includes a first ceramic subcoating film 121 and a second ceramic subcoating film 122.
[0078] According to one embodiment of this application, a coating layer structure is provided. A method for manufacturing this coating layer structure includes providing a substrate, forming a first ceramic coating film on the substrate using an atmospheric plasma spraying method or vapor deposition method, forming a second ceramic coating film on the side of the first ceramic coating film away from the substrate using a suspension plasma spraying method, and forming a third ceramic coating film on the side of the second ceramic coating film away from the substrate using a chemical vapor deposition method or physical vapor deposition method. The first ceramic coating film manufactured by the atmospheric plasma spraying method or vapor deposition method of this application has good interfacial bonding strength and therefore readily bonds with the substrate. The second ceramic coating film manufactured by the suspension plasma spraying method can reduce the roughness and porosity of the coating layer structure. Furthermore, the third ceramic coating film manufactured by the chemical vapor deposition method or physical vapor deposition method can further reduce defects such as cracks in the coating layer structure. Therefore, a smooth, dense, and crack-free surface of the coating layer structure can be obtained. Applying such a smooth, dense, and crack-free coating layer structure to the chamber inner liner of a plasma apparatus contributes to improving the plasma cleaning effect on process by-products adhering to the chamber inner liner during the plasma etching process, thereby enhancing the stability and yield of the plasma etching process.
[0079] Various embodiments of this specification have been described progressively. Similar parts between the embodiments can be referenced to one another. Each embodiment will be described focusing on the differences from other embodiments. In particular, the structural embodiments are generally similar to the method embodiments and are therefore described briefly. For relevant parts, refer to the description of the method embodiments.
[0080] The foregoing merely illustrates preferred embodiments of the present application. Although the present application is disclosed in preferred embodiments as described above, this does not limit the present application. Those skilled in the art can use the methods and technical content disclosed above to make various changes and modifications to the scope of the technical solution of the present application, or to modify them into equivalent embodiments with equivalent changes, without departing from the technical scope of the present application. Accordingly, any simple modifications, equivalent changes, and modifications to the above embodiments based on the technical essence of the present application, without departing from the scope of the technical solution of the present application, are all to be interpreted as being within the scope of protection of the technical solution of the present application.
Claims
1. A method for manufacturing a coating layer structure applied to a plasma device, Providing the base material, A method for manufacturing a coating layer structure, characterized by forming multiple ceramic coating layers on one side of the substrate, wherein the roughness and density gradually decrease from the side closer to the substrate to the side further away from the substrate.
2. When the multiple layers of ceramic coating include a first ceramic coating film, a second ceramic coating film, and a third ceramic coating film, forming the multiple layers of ceramic coating on one side of the substrate is: A first ceramic coating film is formed on the substrate using an atmospheric plasma spraying method or a vapor deposition method. Using a suspension plasting method, a second ceramic coating film is formed on the side of the first ceramic coating film that is away from the substrate, The method according to claim 1, characterized in that it includes forming a third ceramic coating film on the side of the second ceramic coating film away from the substrate using chemical vapor deposition, physical vapor deposition, plasma-enhanced chemical vapor deposition, or plasma-enhanced physical vapor deposition.
3. The method according to claim 1, characterized in that the substrate material includes aluminum or an aluminum alloy.
4. The method according to claim 2, characterized in that the material of the first ceramic coating film includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.
5. The method according to claim 2, characterized in that the material of the second ceramic coating film includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.
6. The method according to claim 2, characterized in that the material of the third ceramic coating film includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.
7. The method according to claim 2, characterized in that the second ceramic coating film includes a first ceramic subcoating film and a second ceramic subcoating film.
8. The method according to the present invention, characterized in that the first ceramic coating film has a thickness of 50 μm or more and 500 μm or less.
9. The method according to the present invention, characterized in that the second ceramic coating film has a thickness of 50 μm or more and 500 μm or less.
10. The method according to the present invention, characterized in that the third ceramic coating film has a thickness of 2 μm or more and 200 μm or less.
11. The method according to the present invention, characterized in that the first ceramic coating film has a density of 3% or more and 8% or less.
12. The method according to the present invention, characterized in that the second ceramic coating film has a density of 3% or less.
13. The method according to the present invention, characterized in that the third ceramic coating film has a density of 0.1% or less.
14. The method according to the present invention, characterized in that the first ceramic coating film has a roughness of 3 μm or more and 8 μm or less.
15. The method according to claim 2, characterized in that the second ceramic coating film has a roughness of 1.0 μm or more and 4 μm or less.
16. The method according to the present invention, characterized in that the third ceramic coating film has a roughness of 1 μm or less.
17. The method according to claim 3, characterized in that the aluminum alloy contains copper, silicon, iron, manganese, magnesium, zinc, chromium, and / or titanium.
18. The method according to 17, characterized in that the aluminum alloy is a 6061 aluminum alloy plate.
19. Applicable to a plasma apparatus comprising a plasma etching apparatus and a plasma coating apparatus, a coating layer structure manufactured by the method described in any one of claims 1 to 19, The base coat and A coating layer structure characterized by comprising multiple ceramic coating layers arranged on one side of the substrate, wherein the roughness and density gradually decrease from the side closer to the substrate to the side further away from the substrate.
20. The aforementioned multiple ceramic coating layers include a first ceramic coating film, a second ceramic coating film, and a third ceramic coating film. The coating layer structure according to claim 19, characterized in that the materials of the first ceramic coating film, the second ceramic coating film, and the third ceramic coating film include aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.