Wafer-level polling of electro-optical phase modulators

Abstract

A method for manufacturing an integrated electro-optic phase modulator array is described. The method may include providing a first substrate. The first substrate may comprise an interconnect array. The method may include arranging an array of electro-optic phase modulators on the surface of the first substrate. Each electro-optic phase modulator may comprise a polymer optical stack, a semiconductor substrate, an electrical input section, an optical input section, and / or an optical output section. The interconnect array in each modulator may comprise an electrical interconnect, an electrical bypass, and / or an optical interconnect. The electrical interconnect may be connected to the corresponding electrical input section. The electrical bypass may connect at least one pair of adjacent modulators. The optical interconnect may connect the corresponding optical input section and the optical output section. Each modulator may be connected in series to a corresponding fuse arranged along the electrical interconnect between the corresponding electrical input section and a voltage source.

Description

Technical Field

[0001] The invention of the present disclosure generally relates to polymer modulators.

Background Art

[0002] This application claims the benefit of U.S. Provisional Application No. 63 / 527,984, filed Jul. 20, 2023, the entire content of which is incorporated herein by reference.

[0003] Polymer modulators have become very widely used with recent technological developments. Polymer photonics technology with customized core and cladding layers offers a number of significant advantages over the prior art. Among many advantages, particularly important are the ability to efficiently realize high-performance (in the order of several GHz) three-layer modulators, and the ability to operate at extremely low voltages, enabling direct drive without using a drive circuit. However, although this technology has been commercialized, it cannot be said to be optimized. That is, it does not meet the goals of low cost and space / size requirements, and there are problems such as requiring a lot of time for component alignment, placement, packaging, and testing.

[0004] Much of the recent research on polymer modulators has focused on Si organic hybrids (SOHs), which are also called Si slot modulators. These modulators exhibit a very small Vπ-L product due to their short length (about 1 mm) and high single-layer r33 coefficient. Since only electro-optic (EO) polymers are used in the structure, poling is efficiently performed, and the single-layer r33 (value obtained by Teng-Man measurement) is also realized within the device. This is in contrast to a typical three-layer structure modulator (cladding / core / cladding), where voltage division occurs between the three layers, making poling inefficient. Usually, dielectric breakdown occurs in the cladding before complete poling is achieved in the core.

[0005] Wafer-level polling, which involves polling the entire wafer, improves efficiency in the semiconductor field. Efficient polling typically involves polling the entire wafer containing multiple slot modulator devices (e.g., hundreds or thousands of slot modulator devices). A high-voltage constant voltage source is connected in series to the multiple slot modulator devices, allowing each device to be powered and polled simultaneously.

[0006] If one of several slot modulator devices short-circuits, current in the circuit flows through the short-circuited device. On the other hand, if one slot modulator device short-circuits, current may not flow to the other slot modulator devices, or there may be no voltage drop across them. Since the Joule heating caused by the current is proportional to the square of the current, the increased current will cause significant Joule heating in the fuse connected to the short-circuited device. A fuse connected to the entire circuit may blow due to this significant Joule heating, disconnecting the circuit and protecting each device in wafer-level polling. However, if the fuse connected to the entire circuit blows and the entire circuit is disconnected, current will also stop flowing to the other slot modulator devices, which may cause these devices to stop operating as well.

[0007] The present invention may comprise a plurality of fuses connected in parallel. Each fuse in the present invention may be connected in series with a limited number of slot modulator devices (e.g., one slot modulator device). Even if one of the fuses connected in series with a short-circuited slot modulator device blows, the other fuses that are not connected in series can still receive current and thus continue to function. When a fuse connected in series with a short-circuited slot modulator blows, the current flowing through all the other fuses increases to compensate for the current that is no longer flowing through the blown fuse. However, since the current from one fuse is distributed among many other fuses, the increase in current in each individual fuse is not a sudden increase that would cause that fuse to blow. Therefore, according to one aspect of the present invention, even if a short circuit occurs, it is possible to protect other devices and the entire circuit, as well as maintain the operation of other devices without stopping them. [Overview of the project]

[0008] A method and system for manufacturing an integrated electro-optic phase modulator array is described. The method may include providing a first substrate. The first substrate may comprise an interconnect array. The method may include arranging an array of electro-optic phase modulators on the surface of the first substrate. Each electro-optic phase modulator may comprise a polymer optical stack, a semiconductor substrate, an electrical input section, an optical input section, and / or an optical output section. The interconnect array in each modulator may comprise an electrical interconnect, an electrical bypass, and / or an optical interconnect. The electrical interconnect may be connected to the corresponding electrical input section. The electrical bypass may connect at least one pair of adjacent modulators. The optical interconnect may connect the corresponding optical input section and the optical output section. Each modulator may be connected in series to a corresponding fuse arranged along the electrical interconnect between the corresponding electrical input section and a voltage source.

[0009] In one embodiment, a system for simultaneously polling multiple slot modulator devices from a single high-voltage source is described. This system may include a single high-voltage input lead, a fuse array having multiple fuses connected in parallel to the high-voltage input lead, and a wafer having multiple slot modulators. Each fuse in the fuse array may have its input terminal connected in series to the high-voltage input lead and its output terminal connected in series to an output cable. At least one fuse in the fuse array may have a predetermined upper limit for polling current. This fuse may blow if the upper limit is exceeded. One or more (e.g., each) slot modulator device among the multiple slot modulators may be connected in series to one fuse in the fuse array via the output cable of the fuse.

[0010] In another embodiment, the system may include a high-voltage input lead, a fuse array having a plurality of fuses connected in parallel to the high-voltage input lead, a probe set having a plurality of probes connected in parallel, and a wafer having a plurality of slot modulators. At least one fuse in the fuse array (e.g., each fuse) may have its input terminal connected in series to the high-voltage input lead and its output terminal connected in series to the output cable. At least one fuse in the fuse array (e.g., each fuse) may have a predetermined upper limit for polling current. This fuse may blow if the upper limit is exceeded. At least one probe in the probe set (e.g., each probe) may have its input terminal connected in series to the output cable of a fuse in the fuse array. At least one probe (e.g., each probe) may be connected in series to a slot modulator device. Multiple slot modulator devices among the plurality of slot modulators may be connected in series to one fuse in the fuse array via probes.

[0011] In some embodiments, a high-voltage source may be connected in series with this system. In some embodiments, the fuse array may be arranged on a carrier printed circuit board (PCB). In some embodiments, the fuse array may have 10,000 or more fuses. In some embodiments, each fuse may have a dogbone-shaped planar shape. Preferably, the dogbone-shaped fuse has a blowing current, i.e., a blowing point, in the range of about 500 nA to about 1000 nA. In some embodiments, each fuse may be formed from aluminum or gold. In some embodiments, the metal thickness of each fuse may be about 1 μm. In some embodiments, the outer width of each fuse may be about 100 μm. The inner width of each fuse may be in the range of about 2 μm to about 25 μm. The inner length of each fuse may be in the range of about 50 μm to about 200 μm. The total length of each fuse may be in the range of about 250 μm to about 400 μm.

[0012] In some embodiments, each slot modulator device may be a silicon-organic hybrid (SOH) slot modulator.

[0013] Because at least some of the fuses are connected in parallel, if one slot modulator device is short-circuited, the fuses connected in series with the short-circuited slot modulator device may melt due to Joule heating. Even if the fuses connected in series with the short-circuited slot modulator device melt, the remaining fuses connected in parallel still receive current and can continue to function. If the fuses connected in series with the short-circuited slot modulator melt under a constant voltage source, the current flowing through all the other fuses connected in parallel remains stable. Therefore, according to the various embodiments described herein, not only can other devices and the entire circuit be protected, but the operation of other devices can also be maintained without interruption. [Brief explanation of the drawing]

[0014] The above summary and the detailed description of preferred embodiments of the present invention described below will be better understood in conjunction with the accompanying drawings. For illustrative purposes, the drawings show currently preferred embodiments of the present invention. However, it should be understood that the present invention is not limited to the exact configurations and means shown. [Figure 1] Figure 1 shows how an optical output containing data is generated by passing an optical input through an optical modulator device (e.g., a Mach-Zehnder interferometer). [Figure 2A] Figure 2A is a partial side cross-sectional view of an integrated electro-optical circuit. [Figure 2B] Figure 2B is a partial cross-sectional view of the integrated electro-optic circuit shown in Figure 2A. [Figure 3] Figure 3 is a schematic diagram showing one embodiment of a system for polling multiple slot modulator devices of the present invention, in which each fuse in the fuse array is connected in series with a predetermined probe on a probe card. [Figure 4] Figure 4 is an enlarged schematic diagram of the fuse array shown in Figure 3. [Figure 5] Figure 5 is an enlarged schematic plan view of the dogbone-shaped fuse shown in Figures 3 and 4. [Figure 6A] Figure 6A is a schematic diagram showing another embodiment of the system for polling multiple slot modulator devices of the present invention, in which each fuse in the fuse array is connected in series to a selected slot modulator device on the wafer. [Figure 6B] Figure 6B is a schematic diagram showing another embodiment of the system for polling multiple slot modulator devices of the present invention, in which each fuse in the fuse array is connected in series to a selected slot modulator device on the wafer. [Modes for carrying out the invention]

[0015] Electro-optic (EO) materials enable interaction between an applied electric field and light passing through them. The electro-optic effect allows for a change in the refractive index perceived by light with minimal loss. As a result of these electro-optic properties, electrical signals can be converted to optical signals instantaneously and accurately. Optical signals offer advantages in long-distance transmission, and their usefulness is increasing as digital signal speeds reach the GHz and THz bands while corresponding electrical transmission distances are shrinking to meters and centimeters.

[0016] EO polymers may offer advantages over conventional electro-optic materials (e.g., lithium niobate, indium phosphide, silicon) in terms of velocity and sensitivity to electric fields. EO polymers possess hyperpolarity, meaning that an applied electric field easily attracts electron clouds into different shapes, altering their optical properties (e.g., refractive index).

[0017] EO polymers can be polled to a state with electro-optical properties by applying a strong electric field and heating in combination. Since heated EO polymers can soften, chromophore molecules dispersed in the host polymer can be oriented in the same direction by polling. By cooling the polled material after the molecules have oriented to their predetermined positions, the molecules can be fixed in an active state even after the polling electric field is removed.

[0018] Nonlinear optical (NLO) chromophores provide electro-optic activity in polled electro-optic polymer devices. Electro-optic polymers have been studied for many years as alternative materials to inorganic materials such as lithium niobate in electro-optic devices. Examples of electro-optic devices include external modulators for communications, data communications, RF photonics, and optical interconnects. Polymer-based electro-optic materials show great potential as core applications in a wide range of next-generation systems and devices, including electro-optic modulators, optical switches, phased array radar, satellite and fiber optic communications, cable television (CATV), optical gyroscopes for aircraft and missile guidance, electronic countermeasures (ECM) systems, backplane interconnects for high-speed computing, ultrafast analog-to-digital conversion, mine detection, RF photonics, spatial light modulation, and all-optical (optical-to-optical switching) signal processing.

[0019] Numerous NLO molecules (chromophores) exhibiting high molecular electro-optic properties have been synthesized. The product of molecular dipole moment (μ) and hyperpolarizability (β) is often used as an indicator of molecular electro-optic performance because dipoles are involved in material processing. For example, see "New Class of High Hyperpolarizability Organic Chromophores and Process for Synthesizing the Same" by Dalton et al. (WO00 / 09613).

[0020] Superpolar organic chromophores are generally formed as molecules having a D-π-A structure. Here, D is an electron-donating structure, A is an electron-accepting structure having a relatively higher electron affinity than the electron-donating structure D, and π is a π-orbital conjugation bridge that freely permits the flow of electrons between the donor D and the acceptor A. These molecules are generally linear and nominally polar due to the difference in the electron affinities of the donor D and the acceptor A. Such molecules can be oriented by applying an electric poling field during manufacture, with the acceptor A portion attracted to the positive potential side and the donor D portion attracted to the negative potential side. Thereafter, the molecules can be fixed in the desired orientation state by crosslinking or freezing the polymer matrix in which the chromophores are embedded. Alternatively, the chromophores can be substantially fixed at the poled positions, such as by covalent bonding.

[0021] An acceptor is an atom or atomic group having a low reduction potential and capable of receiving electrons from a donor via a Π-bridge. Since the acceptor (A) has a higher electron affinity than the donor (D), at least in the absence of an external electric field, the chromophore is generally polarized in the ground state and there is relatively more electron density on the acceptor (A) side. Usually, the acceptor group includes at least one electronegative heteroatom that forms part of a π-bond (double bond or triple bond), such that the electron pair of the π-bond moves to the heteroatom, and concomitantly the bond order of the π-bond decreases (i.e., a double bond is formally converted to a single bond or a triple bond is formally converted to a double bond), and a resonance structure can be depicted whereby the heteroatom obtains a formal negative charge. The heteroatom may be part of a heterocyclic ring. Representative acceptor groups include, for example, -NO2, --CN, --CHO, COR, CO2R, --PO(OR)3, --SOR, --SO2R, --SO3R, etc., but are not limited thereto. Here, R is alkyl, aryl, or heteroaryl. The total number of heteroatoms and carbon atoms contained in the acceptor group can be approximately 30, and the acceptor group may be further substituted with alkyl, aryl, and / or heteroaryl.

[0022] Suitable electron-accepting groups "A" (also referred to as electron-withdrawing groups in the literature) for non-linear optical chromophores that can be used in accordance with various embodiments of the present invention include those described in US Patent Application Publication Nos. US2007 / 0260062, US2007 / 0260063, US2008 / 0009620, US2008 / 0139812, US2009 / 0005561, US2012 / 0267583A1 (collectively referred to as "prior publications"), each of which is incorporated herein by reference in its entirety. Also included are those described in U.S. Pat. Nos. 6,584,266, 6,393,190, 6,448,416, 6,444,830, 6,514,434, 5,044,725, 4,795,664, 5,247,042, 5,196,509, 4,810,338, 4,936,645, 4,767,169, 5,326,661, 5,187,234, 5,170,461, 5,133,037, 5,106,211, and 5,006,285, each of which patents is also incorporated herein by reference in its entirety.

[0023] A donor is an atom or group of atoms with a low oxidation potential that can donate electrons to acceptor "A" via a π-bridge. Since the donor (D) has a lower electron affinity than acceptor (A), the chromophore is generally polarized, at least in the absence of an external electric field, and the electron density on the donor (D) side is relatively low. Typically, the donor group contains at least one heteroatom, which has a lone pair of electrons that can be conjugated to the p-orbital of the atom directly bonded to the heteroatom. As a result, the lone pair of electrons moves to bond with the p-orbital, and a resonance structure can be formed in which the bond order between the heteroatom and the directly bonded atom formally increases (i.e., a single bond is formally converted to a double bond, or a double bond is formally converted to a triple bond), thereby giving the heteroatom a formal positive charge. The p-orbital of the atom directly bonded to the heteroatom may be an empty orbital, or it may be part of a multiple bond with other atoms other than the heteroatom. The heteroatom may be a substituent of an atom having a π bond, or it may be part of a heterocycle. Typical donor groups include, for example, R2N-- and R n Examples of X1 include, but are not limited to, these. Here, R is alkyl, aryl, or heteroaryl, X1 is O, S, P, Se, or Te, and n is 1 or 2. The total number of heteroatoms and carbon atoms in the donor group may be approximately 30, and the donor group may be further substituted with alkyl, aryl, or heteroaryl atoms.

[0024] Suitable electron-donating groups "D" for nonlinear optical chromophores that can be used according to various embodiments of the present invention include those described in the published U.S. Patent applications US2007 / 0260062, US2007 / 0260063, US2008 / 0009620, US2008 / 0139812, US2009 / 0005561, and US2012 / 0267583A1 (collectively referred to as the "Prior Publications"), each of which is incorporated herein by reference in its entirety. Also mentioned are U.S. Patents No. 6,584,266, 6,393,190, 6,448,416, 6,444,830, 6,514,434, 5,044,725, 4,795,664, 5,247,042, 5,196,509, 4,810,338, 4,936,645, 4,767,169, 5,326,661, 5,187,234, 5,170,461, 5,133,037, 5,106,211, and 5,006,285, each of which is incorporated herein by reference in its entirety. Furthermore, this includes the provisions described in U.S. Patent Application No. 17 / 358,960, filed on 25 June 2021, which is also incorporated herein by reference in its entirety.

[0025] A "π-bridge" is an atom or group of atoms that can delocalize electrons from an electron donor (see above) to an electron acceptor (see above) via the orbitals of atoms within the bridge. Typically, these orbitals are double bonds (sp) found in alkenes, alkynes, neutral or charged aromatic rings, and neutral or charged heteroaromatic ring systems. 2These are p orbitals on carbon atoms having a triple bond (sp). Furthermore, these orbitals may also be p orbitals on atoms such as boron or nitrogen. Additionally, these orbitals may be organometallic p, d, or f orbitals, or hybrid organometallic orbitals. Atoms in the bridge that have orbitals where electrons are delocalized are referred to here as “key atoms”. The number of key atoms in the bridge may range from 1 to about 30. Key atoms may be substituted with organic or inorganic groups. These substituents may be selected to improve the solubility of the chromophore in the polymer matrix, improve the stability of the chromophore, or for other purposes.

[0026] After polling, an electrically modulated electric field can be applied within the volume of the chromophore. For example, if a relatively negative potential is applied to the negative end of the polled chromophore and a relatively positive potential is applied to the positive end, the chromophore will become at least partially nonpolar. On the other hand, if a relatively positive potential is applied to the negative end and a relatively negative potential is applied to the positive end, the chromophore will temporarily become hyperpolarized in response to the applied modulated electric field. In general, organic chromophores respond very quickly to electrical pulses that form an electrically modulated electric field, and quickly return to their original polarized state when the pulse is removed.

[0027] The regions of polled hyperpolar organic chromophores generally have a variable refractive index with respect to light. The refractive index depends on the degree of polarization of the molecule. Therefore, light passing through the active region propagates at one speed in the first modulation state and at a different speed in the second modulation state. This characteristic, combined with a fast response time and relatively high sensitivity to changes in the electric field state, makes hyperpolar organic chromophores an excellent basis for constructing ultrafast optical modulators, phase shifters, and the like.

[0028] EO polymer materials have been used in conjunction with other auxiliary materials and demonstrated in high-speed optical modulators. Generally, EO polymer materials are spin-coated onto silicon wafers, and standard microfabrication techniques are used for forming and patterning metal electrodes and optical waveguides. Generally, electro-optic modulators may comprise a polymer optical stack, a semiconductor substrate, an electrical input section, an optical input section, and / or an optical output section. For example, a well-known optical modulator device is the Mach-Zehnder interferometer shown in Figure 1. When an optical input without data passes through a Mach-Zehnder interferometer, it can be converted into an optical output with data. The optical output is modulated by changing the relative phase between two arms. A common technique for doubling the effect with the same drive voltage is to use a push-pull operation in which the two arms are driven in opposite directions. Polymers have interesting advantages compared to many other electro-optic materials that are crystalline. The direction of the electro-optic activity of a polymer is entirely determined by the direction of the applied polling electric field. By polling the two arms of a Mach-Zehnder in opposite directions, a device that automatically performs push-pull operation with a single applied signal can be realized.

[0029] Multiple electro-optic modulators may constitute an integrated electro-optic modulator array, which may, for example, include an interconnect array. For each modulator, the interconnect array may include an electrical interconnect, an electrical bypass, and / or an optical interconnect. The electrical interconnect may be connected to one or more electrical inputs. The electrical bypass may connect at least one pair of adjacent modulators. For example, the optical interconnect may be connected to an optical input and an optical output.

[0030] Figures 2A and 2B are a side cross-sectional view and a cross-sectional view of the integrated polymer electro-optic semiconductor circuit 101 according to this embodiment, respectively. The semiconductor substrate 102 comprises at least one doping layer 104, which is patterned on the semiconductor substrate to form part of the semiconductor device. At least one conductive layer 106 is patterned on the semiconductor substrate. The planarization layer 108 is at least partially coplanar with the at least one conductive layer 106. The polymer optical stack 110 is positioned above the planarization layer 108.

[0031] At least one via 112 may extend through the polymer optical stack 110 at least partially. The at least one via may be operationally connected to a corresponding location on the patterned at least one conductor layer 106. The upper conductor layer 114 is located on the polymer optical stack and is electrically continuous with the at least one via 112.

[0032] As an alternative to via 112, other conductors may be used to electrically connect the upper conductor layer to at least one location on the patterned conductor layer 106. For example, the at least one conductor may be formed by vias, wire bonds, conductive bumps, and / or anisotropic conductive regions, either individually or in combination thereof.

[0033] The upper conductor layer 114 may be formed to include, for example, a metal layer or a conductive polymer. The upper conductor may be plated to increase its thickness. The upper conductor layer may include at least one high-speed electrode 116 formed as a pattern within the upper conductor layer 114. This high-speed electrode 116 is operationally connected to receive signals from vias 112 or other conductive structures from corresponding locations on the patterned at least one conductor layer 106. Thus, the vias 112 or other conductive structures are configured to transmit electrical signals from a semiconductor electrical circuit formed on the semiconductor substrate 102 to the at least one high-speed electrode 116, passing through or bypassing the polymer optical stack 110.

[0034] According to some embodiments, at least one patterned conductive layer 106 is configured to form a ground electrode 118 positioned parallel to at least one fast electrode 116. The active region 120 of the polymer optical stack 110 is positioned to receive modulated signals from the fast electrode 116 and the ground electrode 118. The active region 120 comprises a polling region containing at least one hyperpolar organic chromophore.

[0035] The polymer optical stack 110 supports the active region 120 and is configured to introduce and exit light 122 into the active region. The polymer optical stack 110 may include at least one lower cladding layer 124 and at least one upper cladding layer 126, positioned below and above the electro-optic layer 128, respectively. The lower cladding layer 124 and the upper cladding layer 126 are configured to cooperate with the planarizing layer 108 as needed to guide the introduced light 122 along the plane of the electro-optic layer 128. An optical waveguide structure 130 is formed within the polymer optical stack 110 and guides the light 122 along one or more optical propagation paths through the electro-optic layer 128 and / or an inactive core structure (not shown). In the embodiments of Figures 2A and 2B, the waveguide structure 130 is formed as a trench waveguide including an etching groove formed in at least one lower cladding layer 124.

[0036] The integrated polymer electro-optic semiconductor circuit 101 comprises a semiconductor electrical circuit formed by a combination of a doping layer pattern 104 and at least one patterned conductive layer 106. According to one embodiment, the semiconductor electrical circuit is configured to drive electrodes 116, 118 with a series of modulated electrical pulses during operation. As a result, a modulated electric field is applied to the active region 120, modulating the hyperpolarization state of the polled organic chromophore embedded therein. A composite of electrodes 116, 118, the active region 120, and the optical waveguide structure 130. This modulated hyperpolarization state modulates the propagation speed of light passing through the polled active region 120 of the polymer optical stack 110. By repeatedly modulating the speed of transmitted light, a phase-modulated optical signal is generated emanating from the active region. Such an active region 120 can be combined with optical splitters, optical multiplexers (not shown), and other active regions to constitute an optical amplitude modulator, for example, in the form of a Mach-Zehnder optical modulator.

[0037] A combination of at least one electro-optic active region 120, at least two electrodes 116, 118, and corresponding optical waveguide structures 124, 126, 130 can be considered an electro-optic device 132, 134. A two-channel electro-optic device 134 may consist of one ground electrode 118 and a corresponding pair of active regions 120 and fast electrodes 116a, 116b. The two channels of the two-channel electro-optic device 134 may work together, for example in a push-pull configuration, to form a Mach-Zehnder optical modulator.

[0038] Additional devices can be formed by using electrodes or resistors 136 that are not configured for high-speed operation. The operation of an example of such a device will be described in conjunction with the description of the optical phase bias device later.

[0039] Wafer-level polling is used to poll an entire wafer containing multiple slot modulator devices in parallel. Wafer-level polling of each entire wafer may be performed under high voltage. This high voltage can generate a corresponding high current in wafer-level polling. The high-voltage current in wafer-level polling can range from approximately 10 nA to approximately 100 nA. For example, a single high-voltage source may supply the high-voltage current for wafer-level polling. This single high-voltage source may also generate a single high-voltage current. However, if a short circuit occurs in one device during wafer-level polling, the high-voltage current can increase rapidly and reach a very large current (e.g., 90 μA). In such a situation, the high-voltage current may damage other devices and the entire circuit.

[0040] Fuses can be used to protect devices and the entire circuit. In a constant voltage circuit, if a short circuit occurs, current may flow through the short-circuited device. On the other hand, if one slot modulator device is short-circuited, current may not flow to other slot modulator devices, or there may be no voltage drop across them. Since the Joule heating caused by current is proportional to the square of the current, the increased current flowing through the short-circuited device can cause significant Joule heating of a fuse or device connected in series with the short-circuited device. If there is no fuse in the circuit, there will be no voltage drop across other devices connected in parallel with the short-circuited device, and these devices may stop working. However, if other fuses are present in the circuit, the fuse corresponding to the short-circuited device can melt due to Joule heating, isolating the short-circuited device from the system while maintaining the voltage drop across the other devices. This protects the circuit and other devices within it.

[0041] Various embodiments of wafer-level polling, which polls the entire wafer, include systems for polling multiple slot modulator devices substantially simultaneously from a single high-voltage current. As shown in Figure 3, in one embodiment, the system 10 may include a wafer 50 comprising a fuse array 30, a probe card 40, and multiple slot modulators 52. The slot modulators 52 may be formed on the wafer 50. The fuse array 30 may include a plurality of individual fuses 32 connected in parallel, each fuse 32 configured to be connected in series with a high-voltage source 20 and a slot modulator 52.

[0042] As shown in Figures 3, 4, and 5, each fuse 32 has an input terminal 31 and an output terminal 33. The input terminal 31 may be connected to an input cable 24, which is connected to an input lead 22 configured to receive current from a high-voltage source 20. The output terminal 33 is connected to an output cable 34, which is connected in series to a probe set 44. Optionally, the output cables 34 may be bundled into a cable bundle 36, but the output cables 34 remain as individual cables even within the cable bundle 36, i.e., the output cables 34 operate in parallel with each other.

[0043] The probe set 44 comprises a probe card 40 and a plurality of probes 42, each probe 42 may be configured to be connected in series to a slot modulator 52 on the wafer 50.

[0044] Optionally, as shown in Figure 4, the system may further include a carrier printed circuit board (PCB) 60, a plurality of spring-loaded clips 62 connected to output cable extensions 34A, and one or more array positioning stoppers 64. In this embodiment, the fuse array 30 may be configured to be detachably mounted to the carrier PCB 60. That is, the fuse array 30 is located on a card 66, which is mountable to and detachable from the PCB 60. In a preferred embodiment, the output cable 34 of each fuse is located on the card 66 and connected to a spring-loaded clip 62 connected to an output cable extension 34A. This output cable extension 34A is then connected in series to a probe card 40 or a slot modulator 52. The array positioning stoppers 64 guide the placement of the fuse array card 66, positioning the fuse array 30 on the carrier PCB 60 in a predetermined orientation. In a preferred embodiment, the spring-loaded clips are spring-loaded beryllium copper clips.

[0045] A single input lead 22 is configured to receive current from a high-voltage source 20. The single high-voltage source 20 may have one or more input cables. Examples of known high-voltage sources include, but are not limited to, modular high-voltage power supplies, rack-mount and bench-top high-voltage power supplies, monoblock high-voltage power supplies, application-specific high-voltage power supplies, three-output high-voltage power supplies, four-output high-voltage power supplies, single-output high-voltage power supplies, single-output programmable bipolar high-voltage power supplies, single-output unipolar high-voltage power supplies, or source measure units (SMUs).

[0046] Some embodiments may include a fuse array comprising multiple fuses 32 connected in parallel. In one embodiment, each fuse 32 is formed from a material having good resistive properties and may be a single metal, alloy, aluminum, gold, copper, silver, platinum, palladium, tungsten, titanium, or a combination thereof. Each fuse 32 has a predetermined polling current limit. The polling current limit is generally set to about 10 to 20 times the assumed polling current. Each fuse has length, width, and thickness. The length, width, and thickness of the fuse affect the fuse's resistance and polling current limit. The material, shape, and dimensions of the fuse can be selected to determine the resistance / temperature at which the fuse blows.

[0047] In a preferred embodiment, as shown in Figure 5, the fuse 32 has a dogbone shape in plan view. A dogbone shape generally refers to a shape similar to a dog's bone, with two relatively large ends connected by a straight, relatively narrow central section. As an example, a dogbone-shaped fuse may have a polling current limit in the range of approximately 500 nA to approximately 1000 nA, an outer width wo of approximately 100 μm, an inner width wi in the range of approximately 2 μm to approximately 25 μm, an inner length li in the range of approximately 50 μm to approximately 200 μm, an overall length l in the range of approximately 250 μm to approximately 400 μm, and a thickness t of approximately 1 μm. As another example, an example dogbone-shaped fuse may have a low polling current limit of approximately 150 nA. As yet another example, an example dogbone-shaped fuse may have a high polling current limit in the range of approximately 5,000 nA to approximately 100,000 nA. Furthermore, the maximum current of the system may be in the range of, for example, approximately 5 μA to approximately 10 μA.

[0048] Various embodiments may further include a wafer 50 configured to support a plurality of slot modulator devices 52. One or more (e.g., each) modulator devices may be used to modulate a light beam across the entire wafer, but the present invention is also applicable to other applications known to those skilled in the art, and can be used in such applications as well. For example, each slot modulator may include, but is not limited to, a polymer modulator or a laser modulator. Preferably, each slot modulator device 52 is connected in series to one fuse 32 in a fuse array 30 via fuse output cables 34, 34A.

[0049] Because the fuses 32 are connected in parallel, if one slot modulator device 52 is short-circuited, the fuse 32 connected in series with the short-circuited slot modulator device 52 may melt due to Joule heating. Even if the fuse connected in series with the short-circuited slot modulator device melts, the remaining fuses still receive current and maintain their voltage drop, allowing them to continue functioning. Even if the fuse connected in series with the short-circuited slot modulator melts, the current flowing through all other fuses connected in parallel can remain stable. No voltage drop is lost in any of the other slot modulator devices connected in parallel. Therefore, the present invention not only protects other devices and circuits connected in parallel but also maintains their operation without interrupting it.

[0050] In some of the embodiments described above, the fuse array is mounted on a carrier PCB. Using a carrier PCB improves the efficiency of the process of attaching and detaching the fuse array for each polling step.

[0051] In some of the embodiments described above, the fuse array may include at least 10,000 fuses connected in parallel. The length and width of the fuse array may range from about 5 cm to about 20 cm.

[0052] In some embodiments, each slot modulator device is a silicon-organic hybrid (SOH) slot modulator. By polling the entire wafer using SOH slot modulators under a single high-voltage source, manufacturing efficiency can be improved.

[0053] In some embodiments, the output cable 34 from the fuse 32 may be directly connected in series to the selected slot modulator 52, omitting the probe set 44. For example, in the first embodiment, as shown in Figure 6A, the system for polling multiple slot modulator devices 52 may include one fuse array 30 having multiple fuses 32. Each fuse 32 in the fuse array 30 is connected in series to the selected slot modulator device 52 on the wafer 50 without going through multiple probes in the probe set. In the second embodiment, as shown in Figure 6B, the system for polling multiple slot modulator devices 52 may include two or more fuse arrays 30. Each fuse array 30 may include multiple fuses 32 connected in parallel. The two or more fuse arrays 30 may be connected to each other in parallel, in series, or a combination thereof. Each fuse 32 in the fuse array 30 is connected in series to the selected slot modulator device 52 on the wafer 50 without going through multiple probes in the probe set.

[0054] The present invention may provide a means to solve the problem of an entire slot modulator device wafer becoming unusable due to a short circuit in a single modulator device or fuse on the wafer. The present invention may include a configuration comprising a plurality of fuses connected in parallel, each fuse connected in series with one slot modulator device. If one slot modulator device is short-circuited, the fuse connected in series with the short-circuited slot modulator device may melt due to Joule heating, but the remaining slot modulator devices connected in parallel can continue to function because they still receive current and voltage drops. Furthermore, even if the fuse connected in series with the short-circuited slot modulator melts, the current flowing through all other fuses connected in parallel can be kept stable. Thus, the present invention can not only protect other devices and the entire circuit, but also maintain the operation of other devices without interruption.

[0055] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art in the field of this disclosure. Representative methods, devices, and materials are described here, but are not limited to these unless otherwise noted.

[0056] As used herein (including in the claims), “a,” “an,” and “the” mean “one or more.”

[0057] Unless otherwise indicated, all numerical values ​​in this specification and the claims that describe the physical properties of a part, the quantity of a part, conditions, etc., should be understood in all cases to be modified by the term "approximately." Accordingly, unless otherwise stated, the numerical parameters described herein and in the appended claims are approximations that may vary depending on the desired properties to be obtained by the subject matter of this disclosure.

[0058] As used herein, the term “approximately” refers to a value, physical dimension, mass, weight, time, volume, concentration, or percentage, and may include variations from a given value of ±20%, ±10%, ±5%, ±1%, ±0.5%, and ±0.1% in some embodiments, to the extent appropriate for the disclosed application.

[0059] By referring to the foregoing description, those skilled in the art will understand that various changes and modifications can be made to the invention without departing from the spirit or scope of the invention as defined herein. For example, those skilled in the art may use materials known in the art instead of the materials described herein, and this will not change the scope of the invention.

Claims

1. A method for manufacturing an integrated electro-optic phase modulator array, wherein the method is: To provide a first substrate equipped with an interconnect array, The array of electro-optical phase modulators is placed on the surface of the first substrate, Includes, Each modulator is Polymer optical stack and Semiconductor substrate and Electrical input section, Optical input section, Optical output section, Equipped with, For each modulator, the interconnect array is: An electrical interconnect connected to the corresponding electrical input section, An electrical bypass connecting at least one pair of adjacent modulators, An optical interconnect that connects the corresponding optical input and optical output sections, Equipped with, Each modulator is connected in series with a corresponding fuse located along the electrical interconnect between the corresponding electrical input and the voltage source, in a method.

2. The method according to claim 1, wherein each of the modulators is a silicon-organic hybrid (SOH) slot modulator.

3. The method according to claim 1, wherein the active region of the polymer optical stack comprises at least one hyperpolar organic chromophore.

4. The aforementioned at least one hyperpolar organic chromophore is represented by the general formula D-Π-A, The method according to claim 3, wherein D represents an organic electron-donating group, A represents an organic electron-accepting group having an electron affinity greater than the electron affinity of D, and PI represents a PI-bridge between A and D.

5. The method according to claim 3, wherein the at least one hyperpolar organic chromophore is poled to be oriented.

6. The above method further, To provide a second board equipped with a carrier printed circuit board (PCB), The fuse array is placed on the aforementioned carrier PCB, Includes, The fuse array comprises a plurality of fuses arranged along the electrical interconnect, In the fuse array, each fuse arranged along the electrical interconnect has its input terminal connected in series with the voltage input lead and its output terminal connected in series with the output cable. The method according to claim 1, wherein each fuse in the fuse array has a predetermined upper limit for polling current, and each fuse blows when the upper limit is exceeded.

7. The method according to claim 6, wherein the fuse array is connected in series with the voltage source.

8. The method according to claim 7, wherein the voltage source is a high-voltage constant voltage source.

9. The method according to claim 6, wherein the fuse array comprises 10,000 or more fuses.

10. The method according to claim 1, wherein the fuse arranged along the electrical interconnect has a dogbone-shaped planar shape and has a blowing current in the range of about 500 nA to about 1000 nA.

11. The method according to claim 1, wherein the fuse arranged along the electrical interconnect is made of aluminum or gold.

12. The above method further, To provide a probe set in which multiple probes are connected in parallel, Each probe is connected in series between each fuse arranged along the aforementioned electrical interconnect and the corresponding electrical input section of each modulator. The method according to claim 6, including the method described in claim 6.

13. The method according to claim 1, further comprising polling a wafer comprising the manufactured integrated electro-optic phase modulator array.

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