Method for manufacturing diamond substrates or III-V material substrates for microelectronics applications
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SOITEC SA
- Filing Date
- 2024-07-29
- Publication Date
- 2026-08-05
Smart Images
Figure 2026526103000001_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a method for manufacturing a diamond substrate or a III-V material substrate for microelectronic applications, particularly for power applications.
Background Art
[0002] (Prior Art) Diamond has been attracting increasing attention for microelectronic applications, particularly for power applications.
[0003] This is because diamond exhibits a thermal conductivity that can reach 2200 W / K / m (i.e., five times the thermal conductivity of copper), which is particularly advantageous for diamond to perform a heat sink function.
[0004] Furthermore, diamond can also be considered an optimal material for power electronics because it has a very wide bandgap, a high breakdown voltage, a low threshold voltage, and a high mobility of charge carriers.
[0005] Therefore, it becomes possible to apply high currents and high voltages to a diamond substrate with higher efficiency and speed than other materials having a wide bandgap without relying on a cooling system.
[0006] However, one obstacle encountered when fabricating a single-crystal diamond substrate is the formation of dislocations, which affect the electronic properties by creating energy levels in the bandgap. [[ID=3l]]
[0007] For a diamond substrate to be used in power electronics, it is necessary to dope the substrate, obtain a low dislocation density, and process it to dimensions suitable for microelectronic devices currently having diameters of 150 mm, 200 mm, or 300 mm.
[0008] Methods aimed at reducing the dislocation density of a diamond substrate by epitaxial lateral overgrowth (ELOG) of diamond have already been described.
[0009] Therefore, International Publication No. 2014 / 045220 describes a treatment of a diamond single crystal, including etching the surface of the single crystal in regions of high dislocation density, forming metal islands in the etched regions, and epitaxial regrowth of the diamond in regions of low dislocation density. The metal islands can block dislocations and prevent the propagation of dislocations in the diamond epitaxial layer.
[0010] U.S. Patent Application Publication No. 2012 / 0214856 describes a method for depositing single-crystal diamond tiles onto a large-sized, low-crystal-quality diamond support substrate, aligning the crystal lattices of the substrate and the tiles, and depositing a metal mask on the surface of the support substrate to promote epitaxial growth and epitaxial regrowth of diamond from the sides of the tiles.
[0011] However, these methods have two drawbacks: on the one hand, they are limited to substrates with a diameter smaller than the diameter required for microelectronic devices; on the other hand, they do not meet the requirements regarding the degree of contamination in microelectronics because they involve the presence of metals that easily contaminate the substrate surface.
[0012] The dislocation density obtained by these methods is 10 5 cm -2 It's only to this extent, and there's still room for improvement.
[0013] 10 4 cm -2 Other methods also promote epitaxial lateral overgrowth in order to achieve dislocation densities below a certain level, but these methods are based on the concave and convex areas created in the starting diamond substrate.
[0014] French Patent No. 3022563 proposes a method for alternately forming recesses and protrusions on a starting substrate through a series of etching steps. First, the surface is slightly etched to reveal work-hardened regions with high dislocation density, the high-quality regions (corresponding to the protrusions) are masked with photoresist, and then the recesses are deeply etched. Subsequently, epitaxial lateral overgrowth preferentially begins from these recesses.
[0015] French Patent No. 3038917 proposes creating a through-hole in the center of a diamond single crystal to promote lateral growth in which dislocation propagation is suppressed. This method includes steps of diamond growth and coalescence located above the through-hole, which is the region where the best crystal quality is obtained.
[0016] However, even if metal contamination is avoided, these methods suffer from disadvantages due to the small size of the starting substrate and the high cost.
[0017] The aforementioned problems apply to the manufacturing of substrates made of Group III-V materials such as gallium nitride (GaN), indium phosphide (InP), or gallium arsenide (GaAs), because these materials are only available in the form of small-diameter substrates. [Overview of the project]
[0018] Therefore, one object of the present invention is to design a method for manufacturing a diamond substrate or a III-V material substrate whose crystal quality and dimensions are suitable for microelectronic applications, particularly power applications.
[0019] For this purpose, the present invention is a method for manufacturing a diamond substrate or a III-V material substrate for microelectronics applications, The step of bonding multiple tiles of single-crystal diamond or single-crystal III-V material to a support substrate, wherein each tile is spaced apart from adjacent tiles so that the sides of each tile are exposed. Performing the epitaxial growth of diamond or III-V group materials starting from the side surfaces and the upper surface of each tile until a continuous layer of single-crystal diamond or single-crystal III-V group material is formed and spreading over a plurality of tiles; Forming a vulnerable region in the continuous layer of single-crystal diamond or single-crystal III-V group material by implanting atomic entities to define the boundary of the surface layer to be transferred; Bonding the continuous layer of single-crystal diamond or single-crystal III-V group material to a receiving substrate; Peeling off the continuous layer of single-crystal diamond or single-crystal III-V group material along the vulnerable region and transferring the surface layer of single-crystal diamond or single-crystal III-V group material onto the receiving substrate to form the diamond substrate or the substrate of the III-V group material; Providing a method comprising the above steps.
[0020] By using tiles of single-crystal diamond or III-V group materials, it becomes possible to be released from the size limitations of diamond or III-V group material substrates existing in the market, and at the same time, it becomes possible to form substrates having sizes suitable for microelectronic applications, and the size of the substrate is determined by the size of the support substrate and / or the receiving substrate.
[0021] Furthermore, since this method avoids the use of metals that may contaminate the surface of the diamond or III-V group material substrate, it can meet the requirements of microelectronics in terms of contamination.
[0022] Finally, the whole of the support substrate and the remainder of the continuous layer of single-crystal diamond or III-V group material can be recycled for the formation of a new diamond or III-V group material substrate, whereby this method becomes economically advantageous.
[0023] This method is a series of steps after forming a continuous layer on a plurality of tiles, Polishing the continuous layer; Performing a first etching on the polished surface of the continuous layer to reveal regions with a high density of crystal defects located facing the tile; Depositing a photoresist mask on the surface of the continuous layer to mask regions that are not to be etched; Performing a second etching deeper than the first etching on the regions exposed by the mask; Performing lateral epitaxial regrowth starting from the walls of the etched regions; It is particularly advantageous to further include a series of steps sequentially including the above.
[0024] In some embodiments, the series of steps is repeated at least once.
[0025] In particular, the series of steps is advantageously performed the necessary number of times to obtain a dislocation density of 10 4 cm -2 or less in a continuous layer of single crystal diamond or III-V material.
[0026] A continuous layer of single crystal diamond or single crystal III-V material typically exhibits a thickness of 1 μm or more.
[0027] The surface layer of single crystal diamond or single crystal III-V material transferred onto the receiving substrate generally exhibits a thickness of 100 nm to 1 μm.
[0028] It is particularly advantageous that the distance between two adjacent tiles is 300 μm to 2 cm, preferably 500 μm to 2.5 mm.
[0029] Each tile can exhibit a width of 3 mm to 2 cm.
[0030] The receiving substrate and / or the support substrate advantageously exhibit a diameter exceeding 100 mm.
[0031] The receiving substrate and / or the support substrate includes silicon, silicon carbide, sapphire or quartz. <00001 In some embodiments, tiles made of single-crystal diamond or single-crystal Group III-V material are formed by a chemical vapor deposition process.
[0033] This method involves transferring the surface layer of single-crystal diamond or single-crystal III-V material onto a receiving substrate, The steps include polishing the remaining portion of a continuous layer of single-crystal diamond or single-crystal Group III-V material spread across multiple tiles, The steps include forming a weakened region in a continuous layer of single-crystal diamond or single-crystal Group III-V material by injecting atomic entities to define the boundary of the new surface layer to be transferred, The steps include bonding a continuous layer of single-crystal diamond or single-crystal III-V material to a new receiving substrate, To form a new diamond substrate or a new substrate of a III-V group material, the steps include peeling off a continuous layer of single-crystal diamond or single-crystal III-V group material along a weakened region and transferring a new surface layer of single-crystal diamond or single-crystal III-V group material onto a new receiving substrate. It can further include
[0034] Optionally, in order to thicken the continuous layer of single-crystal diamond or single-crystal Group III-V material, epitaxial regrowth of diamond epitaxy or epitaxy of Group III-V material can be performed between the step of polishing the remainder of the continuous layer of single-crystal diamond or single-crystal Group III-V material and the step of forming a weakened region.
[0035] Other features and advantages of the present invention will become apparent from the following detailed description with reference to the accompanying drawings. [Brief explanation of the drawing]
[0036] [Figure 1] This is a schematic cross-sectional view of a bond between a single-crystal diamond or III-V material tile and a support substrate. [Figure 2A] or [Figure 2C]This is a schematic cross-sectional view showing epitaxial growth of diamond or Group III-V material starting from the side and top surfaces of a tile, for forming a continuous layer of single-crystal diamond or Group III-V material on the tile. [Figure 3] This is a schematic cross-sectional view showing the formation of a weakened region in a continuous layer of single-crystal diamond or a group III-V material. [Figure 4] This is a schematic cross-sectional view showing the bonding of a continuous layer of single-crystal diamond or a group III-V material to a receiving substrate. [Figure 5] This is a schematic cross-sectional view showing the delamination of a continuous layer of single-crystal diamond or group III-V material along a weakened region. [Figure 6] This is a schematic cross-sectional view of the remaining continuous layer of diamond or Group III-V material on the support substrate after delamination. [Figure 7] This is a schematic cross-sectional view showing the new epitaxial growth of diamond or Group III-V material in the remaining continuous layer of diamond or Group III-V material after exfoliation. [Figure 8A] This is a schematic cross-sectional view showing the result of the first etching of the surface of a continuous layer of single-crystal diamond or a group III-V material. [Figure 8B] This is a schematic cross-sectional view showing the deposition of a mask onto a continuous layer of single-crystal diamond or Group III-V material. [Figure 8C] This is a schematic cross-sectional view showing the result of a second etching of the surface of a continuous layer of single-crystal diamond or Group III-V material through a mask. [Figure 8D] This is a schematic cross-sectional view showing epitaxial regrowth of diamond or Group III-V material on an etched surface of a continuous layer of single-crystal diamond or Group III-V material.
[0037] To make the diagrams easier to understand, various elements are not necessarily created to scale. The same reference numerals in the diagrams indicate the same element or an element that performs the same function. [Modes for carrying out the invention]
[0038] (Detailed description of the embodiment) This invention proposes using single-crystal diamond or single-crystal III-V material tiles to form a continuous layer of high-quality diamond or III-V material suitable for a microelectronic environment on a substrate of a size appropriate for a desired application.
[0039] For this purpose, as shown in Figure 1, multiple tiles 20 of diamond or Group III-V material are arranged on the support substrate 1. In the following description, for brevity, we will refer to diamond, but this description is equally applicable to any binary, ternary, or other more complex alloy types of Group III-V material. For example, the Group III-V material may be gallium nitride (GaN), indium phosphide (InP), or gallium arsenide (GaAs).
[0040] The tiles are extracted from a single-crystal diamond donor substrate. For example, the tiles are cut from the donor substrate by any suitable means such as a saw, laser, or waterjet.
[0041] The tile should, advantageously, have a thickness e equal to the thickness of the donor substrate. For example, diamond substrates with thicknesses of 0.3 to 2 mm are commercially available, but any other thickness may be suitable.
[0042] Tiles can be rectangular or square in shape, which is advantageous, but any other shape may also be suitable. One advantage of rectangular or square shapes is that the tiles can be arranged so that their sides are parallel to each other, thus ensuring that the distance between tiles remains constant.
[0043] The width of the tile (i.e., the principal dimension of the tile in a plane perpendicular to the surface of the support substrate) is selected not only to enable the handling of the tile and the transfer of the tile from the donor substrate to the carrier substrate, but also to provide a compromise between the surface area covered by the tile on the support substrate and the surface area of the tile's sides available for epitaxial lateral growth. Thus, the tile can have a width L of 3 mm to 2 cm.
[0044] The support substrate functions as a mechanical support for the tiles, particularly during the epitaxial regrowth and etching stages described below.
[0045] For this purpose, the support substrate is advantageously provided with a coefficient of thermal expansion (CTE) close to that of the diamond forming the tile. The term "close" is understood to mean that the coefficient of thermal expansion of the support substrate is such that it allows for the formation of a continuous diamond layer starting from the tile during post-epitaxy cooling without generating mechanical stress in the layer.
[0046] The support substrate is advantageous to have a diameter typically exceeding 100 mm, suitable for power microelectronic devices. The support substrate diameter is preferably around 150 mm, 200 mm, or 300 mm. Generally, the diameter of the support substrate is larger than the diameter of the donor substrate.
[0047] Silicon is a particularly suitable material for forming support substrates. This is because silicon exhibits a thermal expansion coefficient that matches that of diamond and some III-V materials, and is available in the form of substrates with large diameters, making it particularly suitable for microelectronic devices. However, those skilled in the art will know that any other suitable material, such as silicon carbide (SiC), sapphire, or quartz, in single-crystal or polycrystalline form, can be used as a support substrate.
[0048] The tiles are preferably placed directly on the support substrate and bonded to it by molecular adhesion, but an intermediate bonding layer may be optionally used.
[0049] The tiles are placed on the support substrate, creating free space between any two adjacent tiles. Therefore, when a tile is in a predetermined position on the support substrate, it has two free surfaces: an upper surface S1 facing the support substrate and parallel to the main surface of the support substrate, and a side surface S2 extending across the side of the tile and perpendicular to the support substrate.
[0050] Because the tiles are spaced apart from each other, epitaxial regrowth (i.e., epitaxy of the same material as the tile) induces transverse growth that starts from the sides of the tiles and is substantially parallel to the surface of the supporting substrate. As shown below, such transverse growth is more favorable to crystal quality than longitudinal growth, i.e., growth perpendicular to the surface of the supporting substrate.
[0051] Therefore, it is advantageous to select the distance d between two adjacent tiles to be as large as possible, while simultaneously allowing for the coalescence of diamond islands growing from the sides of the tiles while preventing dislocation. Thus, the distance between two adjacent tiles is typically 300 μm to 2 cm, preferably 500 μm to 2.5 mm.
[0052] In Figure 1, all tiles are represented with the same width and the same distance between them. Therefore, it is possible to arrange the tiles in the form of a grid pattern, specifically by aligning them in two vertical directions on the support substrate to form multiple parallel rows and columns. However, it is also possible to arrange tiles of different shapes or dimensions at different distances.
[0053] The support substrate on which the tiles are placed is then placed into the epitaxial reactor.
[0054] The reactor employs an atmosphere that exhibits temperature conditions and chemical composition suitable for the epitaxial growth of diamond (or, if appropriate, a Group III-V material). Those skilled in the art can determine the appropriate conditions depending on the material to be grown.
[0055] Figures 2A to 2C schematically illustrate the various phases of epitaxial growth of diamond in the structure shown in Figure 1.
[0056] In the first phase (Figure 2A), diamond islands 201 or 202 grow on the top or side of tile 20 in a direction substantially perpendicular to the target surface. In this first phase, the islands are independent of each other.
[0057] In the second phase (Figure 2B), these islands merge until a continuous layer 2 is formed (Figure 2C), which grows to the desired thickness e2.
[0058] As shown in Figure 2C, the layer in question is the continuous layer 2 extending above tile 20. This is because, even if the material surrounding the tile is also diamond, the layer containing the tile and the diamond formed by epitaxial lateral growth tends to exhibit irregular crystalline quality and is therefore not ideal for forming a diamond substrate. Thus, the thickness e2 is measured between the top surface of the tile and the top surface of layer 2.
[0059] Next, a Smart Cut™ type process can be used to transfer a portion of the continuous layer onto the receiving substrate.
[0060] Referring to Figure 3, a weakened region 21 is formed in the continuous layer 2 so as to define the boundary of the diamond surface layer 22. As schematically shown by the arrows, the weakened region is formed by ion implantation in the continuous layer 2.
[0061] The injection depth is selected so that the surface layer does not contain the tile material, and is less than or equal to the thickness of the continuous layer. The thickness of the surface layer 22 is typically 100 nm to 1 μm.
[0062] The injection conditions can be varied depending on the material of the continuous layer.
[0063] For Group III-V materials, injection of hydrogen and / or helium is generally sufficient to form a weakened region at a given depth in a continuous layer. Those skilled in the art know how to determine the required injection conditions, particularly the injection dose and energy.
[0064] In the case of diamond, it is sometimes preferable to perform hydrogen injection in two stages to promote bubble formation in the injection area. Following the first stage of hydrogen injection, the injection area is annealed at a temperature of approximately 1000°C to graphitize it. Subsequently, a second hydrogen injection is performed on the graphitized area, which is more favorable for bubble formation and enables the subsequent delamination of the continuous layer. This method is described in the paper "Elaboration de substrats innovants a partir de diamant [Production of Innovative Substrates from Diamond]" by Jon de Vecchy (oral examination on July 2, 2020). For details on the experimental conditions, please refer to this paper.
[0065] Referring to Figure 4, the continuous layer 2 is bonded to the receiving substrate 3.
[0066] The receiving substrate is advantageous to have a diameter suitable for power microelectronic devices, typically exceeding 100 mm. The diameter of the receiving substrate is preferably around 150 mm, 200 mm, or 300 mm. The diameter of the receiving substrate is generally the same as the diameter of the support substrate.
[0067] Silicon is a particularly suitable material for forming receiving substrates. This is because silicon exhibits a coefficient of thermal expansion that matches that of diamond or some Group III-V materials, and is available in the form of substrates with large diameters, making it particularly suitable for microelectronic devices. However, those skilled in the art will know that any other suitable material, such as single-crystal or polycrystalline SiC, sapphire, or quartz, can be used as the receiving substrate.
[0068] The bonding of the continuous layer 2 to the receiving substrate 3 is advantageously performed by molecular adhesion, but an intermediate bonding layer may be used as an option.
[0069] Referring to Figure 5, for example, fracture is induced in the continuous layer by heat treatment, application of mechanical stress, or any other means, thereby peeling the continuous layer along the weakened region and transferring the surface layer 22 onto the receiving substrate 3.
[0070] Thus, a substrate S is obtained in which a layer 22 of diamond or a III-V material with excellent crystal quality is included in the receiving substrate 3. The substrate can be used for the manufacture of power electronic components or for any other application.
[0071] A substrate consisting of a support substrate 1, tiles 20, and the remainder of a continuous layer of diamond or a group III-V material can be recycled for the purpose of forming one or more new substrates of the same type as substrate S by transferring a portion of the remainder of the continuous layer onto each new receiving substrate.
[0072] For this purpose, the remainder 23 of the continuous layer of diamond or Group III-V material is polished to remove defects associated with injection and fracture, as shown in Figure 6.
[0073] If the remainder 23 of the continuous layer of diamond or Group III-V material is sufficiently thick, for example, if this remainder has a thickness e3 greater than the thickness of at least one new layer of diamond or Group III-V material to be transferred onto a new receiving substrate, then the injection, bonding, and layer transfer processes described with reference to Figures 3 to 5 can be performed.
[0074] If the thickness e3 of the remaining portion 23 of the continuous layer of diamond or Group III-V material is insufficient, as shown in Figure 7, it is possible to perform epitaxial regrowth of the diamond or Group III-V material to thicken the layer until a layer 24 with the desired thickness e4 is obtained. Subsequently, one or more portions of the layer 24 can be transferred to one or more new receiving substrates.
[0075] The process of lateral growth of diamond or Group III-V material starting from the side of the tile can prevent through-dislocations, thereby improving the quality of the continuous layer, at least in the region located between the tiles. Thus, a crystal quality of diamond or Group III-V material suitable for the manufacture of power electronic components can be obtained, at least in the portion of the continuous layer located between the tiles, which is mainly resulting from the lateral growth of diamond or Group III-V material. This improved crystal quality can be obtained without the contribution of contaminants in or on the diamond or Group III-V material layer.
[0076] However, continuous layers may exhibit heterogeneous crystalline quality, as long as the portion of the layer facing the tile, mainly obtained by longitudinal growth of diamond or Group III-V materials, exhibits more crystalline defects, particularly through dislocations.
[0077] To remove the aforementioned defects and homogenize the crystal quality of the continuous layer of diamond or Group III-V material, a series of processing steps described with reference to Figures 8A to 8D can be performed.
[0078] The aforementioned series of steps are performed after forming a continuous layer of diamond or Group III-V material on the tile, but before bonding the layer to the receiving substrate.
[0079] As shown in Figure 8A, slight etching is performed on the surface of continuous layer 2. Those skilled in the art can select the etching method according to the material of continuous layer 2. For example, the etching can be performed as reactive ion etching of the "inductively coupled plasma reactive ion etching" (ICP-RIE) type.
[0080] Etching has the effect of revealing regions Z1 with high defect density, and these regions are generally found facing the tile. In this way, cavities are formed in the continuous layer 2. Depending on the thickness of the continuous layer 2, the depth of the cavity 2a can be approximately 0.1 to 2 μm.
[0081] As shown in Figure 8B, a photoresist mask 4 is then deposited on the surface of the continuous layer 2. The mask has openings that expose the areas to be etched Z1 and protect the areas that are not to be etched. The pattern of the mask can be predetermined according to the tile distribution pattern of the support substrate, i.e., the openings are positioned facing the tiles. The mask can be formed by known photolithography techniques.
[0082] Referring to Figure 8C, a second etching is performed through the mask 4. This second etching makes it possible to cut out a region Z2 deep enough to promote lateral growth of diamond or Group III-V material during the subsequent epitaxial regrowth stage. Therefore, the depth of region Z2 can be approximately 1 to 10 μm, depending on the thickness of the continuous layer 2. The etching does not reach the tile 20 itself. Those skilled in the art can select the etching method according to the material of the continuous layer. The second etching can be performed in the same way as the first etching or in a different way.
[0083] The mask is then removed, for example, by selective etching.
[0084] Referring to Figure 8D, epitaxial regrowth of diamond or Group III-V material is performed, which promotes lateral growth starting from the sides of the etched region Z2, and accompanying longitudinal growth starting from the unetched region, which continues until coalescence occurs and a continuous layer 2 with improved crystal quality is obtained.
[0085] The aforementioned series of steps can be performed once or multiple times.
[0086] The series of steps is 10 in continuous layer 2 4 cm -2 It is preferable that this is performed as many times as necessary to achieve the following dislocation densities.
[0087] One advantage of this method is that it is possible to obtain very good crystal quality, which may be superior to that of the tile itself. Therefore, in some embodiments, diamond tiles or donor substrates can be obtained by an "HPHT" (high pressure, high temperature) process, which provides optimal but relatively expensive crystal quality. In other embodiments, diamond or III-V material tiles or donor substrates can be obtained by a chemical vapor deposition process, which provides lower but cheaper crystal quality. However, epitaxial regrowth with growth from the sides of the tile can be avoided to prevent this degradation of the tile's crystal quality.
Claims
1. A method for manufacturing a diamond substrate or a substrate of Group III-V material for microelectronics applications, The step of joining multiple tiles (20) of single-crystal diamond or single-crystal Group III-V material to a support substrate (1), wherein each tile is spaced apart from adjacent tiles so that the side surface (S2) of each tile is exposed. The steps include: performing epitaxial growth of the diamond or the Group III-V material until a continuous layer (2) of the single-crystal diamond or the single-crystal Group III-V material is formed, starting from the side and top surfaces of each tile and spreading over the plurality of tiles (20); It is a series of stages, (a) The step of polishing the continuous layer (2), (b) A step of performing a first etching on the polished surface of the continuous layer (2) to make visible regions (Z1) with a high density of crystal defects located facing the tile, (c) A step of depositing a photoresist mask (4) on the surface of the continuous layer (2) to mask the areas that will not be etched, (d) A step of performing a second etching deeper than the first etching on the region (Z2) exposed by the mask, (e) A step of performing lateral epitaxial regrowth starting from the wall of the etched region (Z2), A series of steps including, The steps include forming a weakened region (21) in the continuous layer (2) of the single-crystal diamond or the single-crystal Group III-V material by injecting atomic entities in order to define the boundary of the surface layer (22) to be transferred, The steps include bonding the continuous layer (2) of the single-crystal diamond or the single-crystal Group III-V material to a receiving substrate (3), To form the diamond substrate or the substrate of the Group III-V material, the steps include peeling off the continuous layer (2) of the single-crystal diamond or the single-crystal Group III-V material along the weakened region (21) and transferring the surface layer (22) of the single-crystal diamond or the single-crystal Group III-V material onto the receiving substrate (3), Methods that include...
2. The method according to claim 1, wherein the series of steps is repeated at least once.
3. The series of steps described above are performed in the continuous layer (2) of the single-crystal diamond or the single-crystal Group III-V material for 1E4 cm －２ The method according to claim 1 or 2, which is performed as many times as advantageously necessary to obtain the following dislocation density.
4. The method according to any one of claims 1 to 3, wherein the continuous layer of the single-crystal diamond or the single-crystal Group III-V material has a thickness (e2) of 1 μm or more.
5. The method according to any one of claims 1 to 4, wherein the surface layer of the single-crystal diamond or single-crystal group III-V material transferred onto the receiving substrate has a thickness of 100 nm to 1 μm.
6. The method according to any one of claims 1 to 5, wherein the distance between two adjacent tiles is 300 μm to 2 cm, preferably 500 μm to 2.5 mm.
7. The method according to any one of claims 1 to 6, wherein each tile has a width of 3 mm to 2 cm.
8. The method according to any one of claims 1 to 7, wherein at least one of the receiving substrate and the support substrate has a diameter of 100 mm or more.
9. The method according to any one of claims 1 to 8, wherein the receiving substrate comprises silicon, silicon carbide, sapphire, or quartz.
10. The method according to any one of claims 1 to 9, wherein the tile of the single-crystal diamond or the single-crystal Group III-V material is formed by a chemical vapor deposition process.
11. After transferring the surface layer (22) of the single-crystal diamond or the single-crystal Group III-V material onto the receiving substrate (3), The steps include polishing the remaining portion (23) of the continuous layer of the single-crystal diamond or single-crystal group III-V material that extends over the plurality of tiles (20), The steps include forming a weakened region in the continuous layer of the single-crystal diamond or the single-crystal Group III-V material by injecting atomic entities in order to define the boundary of the new surface layer to be transferred, The steps include bonding the continuous layer of the single-crystal diamond or the single-crystal group III-V material to a new receiving substrate, To form a new diamond substrate or a new substrate of the Group III-V material, the steps include peeling off the continuous layer of the single-crystal diamond or the single-crystal Group III-V material along the weakened region, and transferring the new surface layer of the single-crystal diamond or the single-crystal Group III-V material onto the new receiving substrate, The method according to any one of claims 1 to 10, including the method described in any one of claims 1 to 10.
12. The method according to claim 11, comprising the step of performing epitaxial regrowth of the diamond or the group III-V material between the step of polishing the remainder (23) of the continuous layer (24) of the single-crystal diamond or the group III-V material in order to thicken the continuous layer (24) of the single-crystal diamond or the group III-V material and the step of forming the weakened region (21).