Gas control device
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- ACM RES (SHANGHAI) INC
- Filing Date
- 2024-05-06
- Publication Date
- 2026-08-06
AI Technical Summary
【0009】 本発明は、従来技術と比べて以下の有益な効果を有する。
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Figure 2026526146000001_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of integrated circuit chip manufacturing, and more specifically, to a gas control device.
Background Art
[0002] As shown in FIG. 1, a conventional coater-developer includes a storage chamber 5 and an air supply device provided above the storage chamber 5. Inside the storage chamber 5, there are provided a suction table 51, a rotation motor 52, and a photoresist nozzle (not shown). The photoresist nozzle is installed above the center of the suction table 51. The air supply device includes a filter plate 2, a diffusion plate 3, and an air supply box 6. A wafer 7 is placed on the suction table 51, the photoresist nozzle sprays photoresist on the surface of the wafer 7, and the rotation motor 52 drives the wafer 7 to rotate at high speed so that the photoresist spreads over the entire surface of the wafer 7. During the rotation of the wafer 7, the air supply device blows in a constant temperature and humidity gas from the outside into the storage chamber 5 through the air supply box 6, the filter plate 2, and the diffusion plate 3 in sequence, and a uniform photoresist film is coated on the surface of the wafer 7 by the combined action of the constant temperature and humidity gas.
[0003] In the above process, for the introduced gas, in addition to temperature and humidity, the uniformity of the wind speed also needs to be accurately controlled. In photoresist coating, it is necessary to introduce a constant temperature and humidity gas directly above the wafer 7 and ideally blow the gas vertically onto the upper surface of the wafer 7 at a constant speed. If the wind speed is not uniform, variations will occur in the thickness of the photoresist film on the surface of the wafer 7, the photoresist film will become uneven, and it will affect the subsequent chip manufacturing process.
[0004] Conventional air supply devices exhibit vortex phenomena, making it difficult to guarantee that the gas is blown vertically onto the top surface of the wafer 7 at a constant velocity. As shown in Figure 2, the simulated gas distribution within the air supply box 6 shows a large vortex (indicated by the dashed line) forming in the upper left, resulting in uneven air velocity towards the wafer 7. As shown in Figure 3, the simulated flow velocity shows that the magnitude of the air velocity towards the surface of the wafer 7 gradually increases from left to right across each cross-section of the air supply device. [Overview of the project]
[0005] The present invention has been made in view of the above problems, and aims to provide a gas control device that makes the wind speed of the airflow toward the wafer surface uniform.
[0006] To solve the above problems, the present invention provides the following technical means.
[0007] It comprises an air supply unit, a filter plate, a diffuser plate, and an air guide unit. The air supply unit has an opening for flowing gas toward the filter plate, the filter plate is installed corresponding to the opening, the diffuser plate is installed below the filter plate, and the gas passes through the air supply unit, the filter plate, and the diffuser plate in that order before being blown perpendicularly onto the surface of the wafer to be processed. The air guide unit is a gas control device comprising at least one air guide plate provided at the air intake port of the air supply unit.
[0008] The present invention comprises an air supply unit, a filter plate, and a diffuser plate. The air supply unit has an opening formed therein for flowing gas toward the filter plate, the filter plate is installed corresponding to the opening, the diffuser plate is installed below the filter plate, and the gas passes through the air supply unit, the filter plate, and the diffuser plate in that order before being blown perpendicularly onto the surface of the wafer to be processed. The diffuser plate has a plurality of through holes, and the depth of the through holes corresponding to the first region is smaller than the depth of the through holes corresponding to the second region, and the gas control device is provided in which the wind velocity in the first region is lower than the wind velocity in the second region.
[0009] The present invention has the following beneficial effects compared to the prior art.
[0010] The gas control device provided by the present invention includes a guide plate provided at the air intake port of the air supply unit. After passing through the air supply unit, the constant temperature and humidity gas passes through a filter plate and a diffuser plate in sequence and is blown perpendicularly toward the wafer surface. By adding a guide plate to guide the gas into the air supply path and blowing the partitioned gas into the interior of the air supply unit, the air velocity across the entire wafer surface is made uniform.
[0011] The depth of the through-holes is set according to the airflow velocity in the through-holes. The depth of the through-holes corresponding to low airflow velocity regions is smaller than the depth of the through-holes corresponding to high airflow velocity regions. Larger through-hole depths somewhat hinder gas evacuation, while smaller through-hole depths promote gas evacuation, maintaining uniformity of airflow velocity from various points on the diffuser plate toward the wafer surface. [Brief explanation of the drawing]
[0012] The features and performance of the present invention will be further described based on the following embodiments and their drawings. [Figure 1] A schematic diagram of a conventional coater / developer is shown. [Figure 2] A diagram showing the gas distribution using conventional technology is shown. [Figure 3] A diagram showing the gas flow velocity using conventional technology is shown. [Figure 4] This diagram shows a schematic three-dimensional structure of the gas control device provided by the present invention. [Figure 5] This shows a top view of the gas control device provided by the present invention. [Figure 6] This shows a schematic diagram of the structure of an air guide unit provided by one embodiment of the present invention. [Figure 7] This shows a schematic diagram of the structure of an air guide plate provided by one embodiment of the present invention. [Figure 8] This diagram shows a schematic representation of the connection between a single air guide plate and other components, provided by one embodiment of the present invention. [Figure 9] This shows a side view of a single air guide plate and other components provided by one embodiment of the present invention. [Figure 10] This shows a gas distribution diagram provided by one embodiment of the present invention. [Figure 11] This diagram shows the gas flow velocity situation provided by one embodiment of the present invention. [Figure 12] This shows a schematic diagram of the structure of a diffusion plate provided by one embodiment of the present invention. [Figure 13] This diagram shows a schematic structure of the control region in one embodiment of the present invention. [Figure 14] This shows a structural cross-sectional view of the control region of one embodiment of the present invention. [Figure 15] A schematic diagram of an air guide unit according to another embodiment of the present invention is shown. [Figure 16] A schematic diagram of the connection between a single air guide plate and other components in another embodiment of the present invention is shown. [Figure 17] A structural perspective view of the control region of yet another embodiment of the present invention is shown. [Figure 18] A top view of a diffuser plate according to yet another embodiment of the present invention is shown. [Modes for carrying out the invention]
[0013] To more clearly explain the technical solutions of the embodiments of this application, the drawings necessary for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some examples or embodiments of this application. For those skilled in the art, this application can also be applied to other similar scenarios based on these drawings without any inventive labor. As is clear from the language context or unless otherwise specified, the same reference numerals in the drawings represent the same structure or operation. As shown in this application and the claims, unless the context explicitly presents an exception, terms such as "one", "a", "a kind", and / or "the" do not refer to the singular but can also include the plural. Generally speaking, the terms "comprising" and "including" only indicate that the explicitly specified steps or elements are included, and these steps or elements do not constitute an exclusive listing, and other steps or elements may also be included in the method or equipment.
[0014] The relative arrangements, numerical expressions and numerical values of the components and steps described in these embodiments do not limit the scope of this application unless specifically stated. It should be understood that for the sake of ease of explanation, the dimensions of each part shown in the drawings are not drawn based on the actual proportional relationship. Although the known technologies, methods and equipment for those skilled in the relevant art may not be discussed in detail, when appropriate, such technologies, methods and equipment should be regarded as part of the patented specification. In all the examples shown and discussed here, any specific value should be construed as merely illustrative and not restrictive. Therefore, other examples of the exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in the drawings, there is no need to discuss it further in the subsequent drawings.
[0015] In the description of the present application, the directions or positional relationships indicated by directional terms such as "front, rear, top, bottom, left, right", "horizontal, vertical, perpendicular, horizontal", "top, bottom", etc. are usually based on the directions or positional relationships shown in the drawings, and are only for facilitating the description of the present application and simplifying the description. Unless there is a contrary description, these directional terms do not indicate or imply that a specific device or element must have a specific direction or be configured and operate in a specific direction, so it cannot be understood as a limitation on the protection scope of the present application. The directional terms "inside, outside" mean inside and outside with respect to the contour of each component itself.
[0016] For the sake of facilitating the description, here, in order to describe the spatial positional relationship between one component or feature and another component or feature as shown in the figure, spatial relative terms such as "above...", "above...", "upper surface of...", "on the upper surface" may be used. It should be understood that the spatial relative terms are intended to include different directions in the use or operation other than the directions of the components described in the drawings. For example, when the components in the drawing are reversed, a component described as "above another component or configuration" or "on another component or configuration" is defined as "below another component or configuration" or "under another component or configuration". Therefore, the exemplary term "above..." can include two directions, namely "above..." and "below...". This component can also be positioned in other different ways (rotated 90 degrees or in other directions), and the spatial relative descriptions used here can be appropriately explained.
[0017] Furthermore, it is necessary to explain that the use of terms such as "first," "second," etc., to limit parts is solely for the purpose of facilitating the distinction between corresponding parts, and unless otherwise stated, these terms have no special meaning and should not be understood as limitations on the scope of protection of this application. In addition, while the terms used in this application have been selected from publicly known terms, some terms described in the specification of this application were selected at the applicant's discretion, and their detailed meanings are described in the relevant sections of this specification. Moreover, it is required to understand this application not only through the terms actually used, but also through the meanings contained within each term.
[0018] The technical solution of the present invention will be further described below with reference to the drawings, using specific embodiments.
[0019] Embodiment 1 Referring to Figure 4, this embodiment provides a gas control device comprising an air supply unit 1, a filter plate 2, a diffuser plate 3, and an air guide unit 4.
[0020] The air supply unit 1 has an opening for allowing gas to flow toward the filter plate 2, the filter plate 2 is installed corresponding to the opening, and the diffuser plate 3 is installed below the filter plate 2. In this embodiment, the diffuser plate 3, the filter plate 2, and the air supply unit 1 are stacked in order from bottom to top.
[0021] The air guide unit 4 is equipped with at least one air guide plate 42, all of which are located at the air intake port 13 of the air supply unit 1. After passing through the air supply unit 1, the constant temperature and humidity gas passes through the filter plate 2 and the diffuser plate 3 in sequence and is blown perpendicularly toward the surface of the wafer to be processed.
[0022] In this embodiment, a guide plate 42 for guiding gas is added to the air supply path of the air supply unit 1, and the partitioned gas is blown into the interior of the air supply unit 1, thereby avoiding the vortex flow of the conventional technology and maintaining uniformity of air velocity across the entire wafer surface. Specifically, referring to Figures 4-5, the air supply unit 1 comprises a control area 11 and an air supply area 12 having an air supply port 121 and provided on one side of the control area 11. The guide unit 4 is installed in the transition area between the control area 11 and the air supply area 12, where the guide port 13 is provided, and the air supply area 12 and the control area 11 are in communication via the guide port 13, with the guide unit 4 provided at the guide port 13. The direction of gas flow in the air supply area 12 is set as the first flow direction AA, and the direction of gas flow in the control area 11 is set as the second flow direction BB. The constant temperature and humidity gas enters the control area 11 by passing through the air inlet 121, the interior of the air supply area 12, and the air guide unit 4 in that order. The filter plate 2 is installed below the control area 11, and the diffuser plate 3 is installed below the filter plate 2. After passing through the air supply area 12, the gas passes through the control area 11, the filter plate 2, and the diffuser plate 3 in that order, and is blown vertically toward the surface of the wafer.
[0023] Referring to Figure 6, the air guide unit 4 comprises an adjustment member 41, a plurality of air guide plates 42, a base plate 43, and a link mechanism 44, with the plurality of air guide plates 42 installed at intervals. The adjustment member 41 is provided on the base plate 43 and is connected to the air guide plates 42 by passing through the base plate 43. The rotation of the adjustment member 41 is manually controlled to swing the air guide plates 42 against the base plate 43. The adjustment member 41 may also be a knob.
[0024] The link mechanism 44 comprises a plurality of first links 441, a plurality of second links 442, a first connecting section 443, and a second connecting section 444. The first links 441 and the second links 442 are provided on both sides of the bottom plate 43, respectively. The first links 441 and the second links 442 are parallel to each other. Both ends of the air guide plates 42 are provided on the first links 441 and the second links 442, respectively, and two air guide plates 42 are provided on each of the first links 441 and the second links 442. The plurality of air guide plates 42 are installed parallel to each other, and the distance between adjacent air guide plates 42 is the same. Here, one end of the air guide plate 42 at the leading position is rotatably connected to the first connecting section 443, and one end of the air guide plate 42 at the trailing position is rotatably connected to the second connecting section 444.
[0025] Alternatively, the first connecting portion 443 may be replaced with the first link 441, and the second connecting portion 444 may be replaced with the second link 442.
[0026] The adjustment member 41 is connected to one of the air guide plates 42, and the structure of the link mechanism 44 is designed to have an interlocking effect. When the adjustment member 41 is adjusted manually, all the air guide plates 42 oscillate by the same angle in sync with the bottom plate 43, thereby changing the air intake angle, and the operator corrects the oscillation angle of the air guide plates 42 in a timely manner based on the air intake volume and coating condition.
[0027] The air guide unit 4 does not necessarily need to be equipped with an adjustment member 41. All air guide plates 42 are pre-set to the same optimal oscillation angle relative to the base plate 43, and the oscillation angle is fixed and does not require adjustment. Depending on the vortex generation region and influence region in the simulation results, each air guide plate 42 may be set to a different oscillation angle relative to the base plate 43.
[0028] In one selectable embodiment, the air guide plate 42 may be curved. As shown in Figure 7, the curved shape is advantageous for guiding the airflow, reducing the pressure drop in the airflow and further reducing the possibility of vortex formation within the air supply unit 1.
[0029] Referring to Figures 8 and 9, in order to more appropriately adjust the direction of the air intake flow, a first rotation axis 446 is added to the air guide plate 42, and rotation hinge members 445 are provided on the bottom plate 43, the first link 441 (see also Figure 6), and the second link 442, respectively, and the first rotation axis 446 is hinged to the bottom plate 43, the first link 441, and the second link 442 via multiple rotation hinge members 445. The air guide plate 42 rotates on the bottom plate 43 around the first rotation axis 446, changing the inclination angle of the air guide plate 42 relative to the bottom plate 43. In embodiments not shown, the air guide plate 42 may be directly hinged to the bottom plate 43, the first link 441, and the second link 442 via the rotation hinge members 445.
[0030] Returning to Figures 4-5, the filter plate 2 comprises a filter body and a frame surrounding the outer circumference of the filter body. An opening communicating with the filter body is formed in the control region 11, and the frame may be connected to the frame of the control region 11.
[0031] Referring to Figure 12, the diffuser plate 3 has a plurality of through-holes 31, and the gas passes through the through-holes 31 and is blown onto the wafer surface. The uniformity of the air velocity flowing out from the diffuser plate 3 determines the uniformity of the photoresist film thickness. The diffuser plate 3 has a proximal region D1 and a distal region D2 which are sequentially arranged along the second gas flow direction BB, with the proximal region D1 being close to the air intake 13. Referring to the conventional flow velocity distribution diagram in Figure 3, the diffuser plate 3 is divided into 56 cross-sections along the second flow direction BB, with equal spacing between adjacent cross-sections, where Z1 represents the first cross-section close to the air supply region 12, Z5 represents the fifth cross-section, and so on for Z10...Z56. In this embodiment, eight cross-sections are extracted.
[0032] In Figure 3, the airflow distribution from Z1 to Z56 is non-uniform, and the airflow velocity in each cross section from the proximal region D1 to the distal region D2 gradually increases. Figure 10 shows the gas distribution situation obtained by simulation using the supply air unit 1 of Embodiment 1, where the gas can achieve a stable output and there is no eddy flow phenomenon within the control region 11. Furthermore, referring to Figure 11, the uniformity of the gas flow velocity below each through-hole 31 in each cross section is significantly improved compared to the conventional technology.
[0033] Referring to Figure 11, in each cross-section, the wind velocity in the proximal region D1 is lower than the wind velocity in other regions. Referring to Figure 12, in one selectable embodiment, the diffuser plate 3 is provided with an additional barrier region 32 located on the side of the proximal region D1 away from the distal region D2, and the barrier region 32 does not have a gas diffusion function. The size of the barrier region 32 may be the same as the proximal region D1. The barrier region 32 is provided with a barrier plate to block gas outflow, and does not have through-holes or openings for gas passage.
[0034] A certain difference still exists in the airflow velocity of the through-holes at different cross-sectional areas from Z1 to Z56. The fact that the overall flow velocities at Z1, Z5, and Z10 are smaller than those at Z20, Z30, Z40, and Z50 indicates that the airflow velocity at the through-holes 31 closer to the supply air area 12 is low. Referring to Figures 13-14, multiple windbreaks 111 may be provided within the control area 11, aligned in a direction parallel to the cross-sectional area, to improve the airflow velocity at the through-holes 31 closer to the air intakes 13 in the diffuser plate 3 by blocking some of the airflow at the air intakes 13. Of course, the installation direction of the windbreaks 111 is not limited to this, and the windbreaks 111 may be inclined with respect to the cross-sectional area. That is, the installation direction of the windbreaks 111 and the second flow direction BB form an angle. Furthermore, a second rotating shaft (not shown) is added to the bottom of the windbreak plate 111 within the control area 11. The windbreak plate 111 rotates within the control area 11 by the second rotating shaft, further adjusting the direction of the airflow to achieve a uniform airflow output. The spacing between adjacent windbreak plates 111 may also be adjusted to further achieve a uniform airflow output.
[0035] Embodiment 2 Referring to Figures 15 and 16, Embodiment 2 provides a gas control device and differs from Embodiment 1 in that a link mechanism 44 is not provided in this embodiment.
[0036] The air guide unit 4 comprises a plurality of air guide plates 42 installed at intervals and a plurality of adjustment members 41. The number and position of the adjustment members 41 are installed in correspondence with the air guide plates 42. An air guide plate 42 is provided on each adjustment member 41. The adjustment member 41 adjusts the oscillation angle of the corresponding air guide plate 42 at the bottom plate 43. The number of air guide plates 42 may be one or two.
[0037] Before the photoresist coating process, the angle of the air guide plate 42 is adjusted by the adjustment member 41 to a preset optimal angle and then fixed in place.
[0038] Furthermore, referring to Figure 17, multiple windbreaks 111 are provided within the control area 11, and the direction in which the windbreaks 111 are installed is perpendicular to the second gas flow direction BB, blocking some of the airflow at the air intake 13.
[0039] In this embodiment, each windbreak plate 42 is independent of the others, and in actual production, the oscillation angle of the windbreak plate 42 can be adjusted more precisely depending on the region and influence of the vortex.
[0040] Within the control region 11, multiple windbreak plates 111 are provided, arranged in a direction parallel to the cross-section. These plates block some of the airflow at the air intake 13 to improve the airflow velocity at the through-hole 31 near the air intake 13 of the diffuser plate 3. After the gas reaches the control region 11, the windbreak plates 111 further adjust the gas velocity.
[0041] Embodiment 3 Referring again to Figures 3 and 18, the wind velocity in the lower left through-hole 31 is low, while the wind velocity in the upper right through-hole 31 is high. In other words, in each cross-section, the wind velocity is low on one side of the air supply area 12 closer to the air supply port 121 (see also Figure 4), and high on the other side. The wind velocities corresponding to different flow velocity lines at the same position on the X coordinate are different, and the wind velocity further away from the air supply area 12 is greater than the wind velocity closer to the air supply area 12.
[0042] In this embodiment, the depth of the through-hole 31 in the diffuser plate 3 is set according to the wind speed in the through-hole 31. The depth of the through-hole 31 corresponding to the first region with low wind speed is smaller than the depth of the through-hole 31 corresponding to the second region with high wind speed. Here, the high and low wind speeds are relative. If the depth of the through-hole 31 is large, gas discharge is hindered to some extent, while if the depth of the through-hole 31 is small, gas discharge is facilitated, thereby reducing the wind speed on the distal side, increasing the wind speed on the proximal side, and making the wind speed at each point uniform.
[0043] Specifically, referring to Figure 18, the depth of the through-holes 31 along the diagonal of the diffuser plate 3 increases linearly from the proximal side, closer to the air intake port 121 of the air supply area 12, to the distal side. The diffuser plate is divided into multiple oblique sections, with the oblique section corresponding to the diagonal being designated as the reference oblique section, and the other oblique sections being installed parallel to the reference oblique section, with the depth of the through-holes 31 in the other oblique sections increasing linearly from the proximal side to the distal side.
[0044] Furthermore, the depth of the through-hole 31 increases in the direction along the second flow direction BB. Also, the depth of the through-hole 31 increases linearly in the direction along the second gas flow direction BB.
[0045] While the basic concepts have been explained above, it is clear that for those skilled in the art, the above disclosure of the invention is merely an example and does not constitute a limitation of this application. Although not explicitly stated here, those skilled in the art may make various modifications, improvements, and alterations to this application. Since such modifications, improvements, and alterations are proposed in this application, such modifications, improvements, and alterations still fall within the spirit and scope of the exemplary embodiments of this application.
[0046] At the same time, the present application uses specific terminology to describe embodiments of the present application. For example, “one embodiment,” “one embodiment,” and / or “several embodiments” mean features, structures, or characteristics relating to at least one embodiment of the present application. Therefore, it should be emphasized and noted that “one embodiment,” “one embodiment,” “alternative embodiment,” or “exemplary embodiment,” when mentioned more than once in different places in this specification, do not necessarily mean the same embodiment. Furthermore, certain features, structures, or characteristics in one or more embodiments of the present application may be combined as appropriate.
[0047] Similarly, it should be noted that, in order to simplify the expression of the disclosure and thereby aid in understanding one or more embodiments of the invention, multiple features may be combined into a single embodiment, drawing, or description in the descriptions of the embodiments of the application described herein. However, this method of disclosure does not mean that there are more features required for the subject matter of the application than the features described in the claims. In fact, the features of an embodiment are fewer than the features of each individual embodiment disclosed above combined.
Claims
1. It comprises an air supply unit (1), a filter plate (2), a diffuser plate (3), and an air guide unit (4), The air supply unit (1) has an opening formed therein for flowing gas toward the filter plate (2), the filter plate (2) is installed corresponding to the opening, and the diffuser plate (3) is installed below the filter plate (2). The gas passes through the air supply unit (1), the filter plate (2), and the diffuser plate (3) in that order, and is then blown perpendicularly onto the surface of the wafer to be processed. The gas control device is characterized in that the air guide unit (4) comprises at least one air guide plate (42) provided at the air guide port (13) of the air supply unit (1).
2. The air supply unit (1) has a control area (11) and an air supply area (12), and the air guide unit (4) is installed in the transition area between the control area (11) and the air supply area (12) where the air guide port (13) is located. The gas control device according to claim 1, characterized in that the air supply area (12) is provided on one side of the control area (11) and is in communication with the control area (11) via the air intake port (13).
3. The aforementioned air guide unit (4) further comprises an adjustment member (41) and a bottom plate (43), The gas control device according to claim 1, wherein the adjusting member (41) is provided on the bottom plate (43), penetrates the bottom plate (43) and is connected to the at least one air guide plate (42), drives the air guide plate (42) to swing against the bottom plate (43) and fixes the at least one air guide plate (42).
4. The gas control device according to claim 3, wherein the air guide unit (4) comprises a link mechanism (44) and a plurality of air guide plates (42) provided on the link mechanism (44), and an adjustment member (41) is provided at the bottom of at least one air guide plate (42) for the link mechanism (44) to synchronously swing the plurality of air guide plates (42).
5. The link mechanism (44) comprises a plurality of first links (441) and a plurality of second links (442), the first links (441) and the second links (442) are installed on both sides of the bottom plate (43), the first links (441) are parallel to the second links (442), The gas control device according to claim 4, characterized in that both ends of each air guide plate (42) are provided on the first link (441) and the second link (442), respectively, and two air guide plates (42) are provided on each of the first link (441) and the second link (442), and the plurality of air guide plates (42) are installed parallel to each other and spaced apart.
6. The gas control device according to claim 5, wherein the link mechanism (44) further comprises a first connecting portion (443) and a second connecting portion (444), one end of the air guide plate (42) at the leading position is rotatably connected to the first connecting portion (443), and one end of the air guide plate (42) at the trailing position is rotatably connected to the second connecting portion (444).
7. The gas control device according to claim 5, wherein the plurality of air guide plates (42) are hinge-connected to the bottom plate (43), the plurality of first links (441), and the plurality of second links (442) via a plurality of rotating hinge members (445), and when the plurality of rotating hinge members (445) rotate, the inclination angle of the plurality of air guide plates (42) with respect to the bottom plate (43).
8. The gas control device according to claim 2, characterized in that the diffusion plate (3), the filter plate (2), and the control region (11) are stacked in order from bottom to top.
9. The gas control device according to claim 3, wherein the air guide unit (4) comprises a plurality of air guide plates (42), adjacent air guide plates (42) are installed at the same interval, and the oscillation angles of the plurality of air guide plates (42) are set to be the same.
10. The gas control device according to claim 1, characterized in that each of the aforementioned air guide plates (42) is provided in a curved shape.
11. The diffusion plate (3) has a proximal region and a distal region which are sequentially installed along the air supply direction of the control region (11), The gas control device according to claim 2, characterized in that a blocking region (32) is provided within the diffusion plate (3) on one side of the proximal region away from the distal region, and a blocking plate for blocking the flow of gas to the filter plate (2) is provided.
12. The gas control device according to claim 2, characterized in that a plurality of windbreak plates (111) are provided within the control region (11), and the direction in which the windbreak plates (111) are installed and the direction in which the air is supplied to the control region (11) form an angle.
13. The gas control device according to claim 12, characterized in that a second rotating shaft installed within the control region (11) is provided at the bottom of the windbreak plate (111), and the windbreak plate (111) rotates within the control region (11) by the second rotating shaft.
14. The gas control device according to claim 1, wherein the air guide unit (4) comprises a plurality of air guide plates (42) and a plurality of adjustment members (41), the number and position of the adjustment members (41) are set in correspondence with the air guide plates (42), each air guide plate (42) is provided on the corresponding adjustment member (41), and each adjustment member (41) is provided to drive the corresponding air guide plate (42) to swing and to fix the air guide plate (42).
15. It comprises an air supply unit (1), a filter plate (2), and a diffuser plate (3), The air supply unit (1) has an opening formed therein for flowing gas toward the filter plate (2), the filter plate (2) is installed corresponding to the opening, and the diffuser plate (3) is installed below the filter plate (2). The gas passes through the air supply unit (1), the filter plate (2), and the diffuser plate (3) in that order, and is then blown perpendicularly onto the surface of the wafer to be processed. The gas control device is characterized in that the diffuser plate (3) has a plurality of through holes (31), the depth of the through holes (31) corresponding to the first region is smaller than the depth of the through holes (31) corresponding to the second region, and the wind speed in the first region is lower than the wind speed in the second region.
16. The air supply unit (1) further comprises an air guide unit (4), and the air supply unit (1) has a control region (11) and an air supply region (12), and the air guide unit (4) is provided in the transition region between the control region (11) and the air supply region (12) where the air guide port (13) is located. The gas control device according to claim 15, characterized in that the air supply area (12) is provided on one side of the control area (11) and is in communication with the control area (11) via the air intake port (13).
17. The gas control device according to claim 16, characterized in that, along the diagonal direction of the diffuser plate (3), the depth of the through-hole (31) increases linearly from the proximal side near the air intake port (121) of the air supply area (12) to the distal side.
18. The gas control device according to claim 17, characterized in that the depth of the through-hole (31) increases along the air supply direction of the control region (11).