Radio frequency front-end module and radio frequency chip

Abstract

The present invention relates to the field of wireless communication, and discloses a radio frequency front-end module comprising, in order, electrically connected signal input terminals, an input matching circuit, an amplification circuit, an output matching circuit, and a signal output terminal, wherein a first terminal is used for connection to a power supply, a second terminal is used for connection to an external logic control circuit for controlling the on / off state of the amplification circuit, and a third terminal is used for outputting a bias current to the input terminal of the amplification circuit, the bias circuit comprising a current mirror circuit, a first transistor, a second transistor, a third transistor, a first resistor, a second resistor, and a third resistor. The present invention can improve the IIP3 performance of the entire radio frequency front-end module.

Description

Technical Field

[0001] The present invention relates to the technical field of wireless communication, and particularly to a radio frequency front-end module and a radio frequency chip.

Background Art

[0002] Mobile communication terminals are becoming increasingly popular in modern society for wireless communication. With the improvement of their processing capabilities, mobile communication terminals are gradually evolving into mobile multimedia centers. In mobile communication systems, currently, there are two main technical routes: cellular mobile communication and WIFI. These two systems are still in the process of evolution, and their common feature is that in order to meet the growing usage needs of users, the communication bandwidth is wider and the transmission speed is faster. In mobile communication terminals, radio frequency signals are amplified by power amplifiers and transmitted via antennas.

[0003] With the development of communication technology, in radio frequency transceiver chips, the radio frequency front-end of mobile terminals is an important device for realizing signal transmission, that is, sending and receiving. With the multi-mode and multi-standardization of communication, the radio frequency front-end is responsible for sending and receiving multi-mode signals of various standards. The requirements for the radio frequency amplifier of the radio frequency front-end are also increasing. For example, the frequency is higher, the bandwidth is wider, the requirement for linearity is higher, and the operating voltage range is wider. For example, in the WIFI system, the radio frequency amplifier in an AP / router usually has an operating voltage of about 5V, while the radio frequency amplifier in a station device (such as a mobile phone, a tablet computer) always has an operating voltage of about 3.3V.

[0004] However, conventional radio frequency amplifiers can only operate within a narrower voltage range and cannot be applied to different devices simultaneously. This often requires radio frequency amplifier suppliers to develop different products to accommodate different operating voltages, which increases product development costs and cycles. [Overview of the project] [Problems that the invention aims to solve]

[0005] The objective of the embodiments of the present invention is to provide a radio frequency front-end module that outputs high / low levels by a bias circuit, in order to solve the problems of conventional radio frequency front-end modules, which have poor operating voltage adjustment effect, high cost, and limited range of application. [Means for solving the problem]

[0006] To solve the above technical problems, in the first aspect, an embodiment of the present invention is a radio frequency front-end module comprising, in order, electrically connected signal input terminals, an input matching circuit, an amplification circuit, an output matching circuit, and a signal output terminal, wherein the first terminal is used for connection to a power supply, the second terminal is used for connection to an external logic control circuit for controlling the on / off state of the amplification circuit, and the third terminal is a bias circuit used for outputting a bias current to the input terminal of the amplification circuit. The bias circuit includes a current mirror circuit, a first transistor, a second transistor, a third transistor, a first resistor, a second resistor, and a third resistor. The present invention provides a radio frequency front-end module characterized in that the base of the first transistor functions as the second terminal of the bias circuit, the emitter of the first transistor is grounded, the collector of the first transistor is connected to the first terminal of the second resistor and the first terminal of the third resistor, the second terminal of the second resistor functions as the first terminal of the bias circuit and is connected to the first terminal of the first resistor, the second terminal of the first resistor is connected to the emitter of the second transistor, the second terminal of the third resistor is connected to the base of the second transistor, the collector of the second transistor is connected to the collector of the third transistor, the collector of the third transistor is further connected to the base of the third transistor, the emitter of the third transistor is connected to the input terminal of the current mirror circuit, and the output terminal of the current mirror circuit functions as the third terminal of the bias circuit.

[0007] Preferably, the radio frequency front-end module further comprises a fourth resistor, and the base of the first transistor is connected to the external logic control circuit via the fourth resistor connected in series.

[0008] Preferably, the current mirror circuit includes a current mirror unit and a voltage adjustment unit, wherein the first terminal of the voltage adjustment unit functions as an input terminal for the current mirror circuit, the second terminal of the voltage adjustment unit is used to connect to an external linear constant voltage power supply, the third terminal of the voltage adjustment unit is connected to the input terminal of the current mirror unit, the output terminal of the current mirror unit functions as an output terminal for the current mirror circuit, the voltage adjustment unit is used to adjust the bias voltage output from the third transistor, and the current mirror unit is used to convert the bias voltage into a corresponding bias current and output it.

[0009] Preferably, the voltage adjustment unit includes a fourth transistor, a fifth resistor and a sixth resistor, The base of the fourth transistor functions as the first terminal of the voltage adjustment unit, the collector of the fourth transistor functions as the second terminal of the voltage adjustment unit and is connected to the first terminal of the fifth resistor, the emitter of the fourth transistor is connected to the first terminal of the sixth resistor, and the second terminal of the sixth resistor functions as the third terminal of the voltage adjustment unit and is connected to the second terminal of the fifth resistor.

[0010] Preferably, the current mirror unit includes a fifth transistor, a sixth transistor, a seventh transistor, and a seventh resistor. The collector of the fifth transistor functions as an input terminal of the current mirror unit, the collector of the fifth transistor is further connected to the base of the fifth transistor and the base of the seventh transistor, the emitter of the fifth transistor is connected to the collector of the sixth transistor and the base of the sixth transistor, the emitter of the sixth transistor is grounded, the collector of the seventh transistor is connected to the first terminal of the seventh resistor, the second terminal of the seventh resistor is connected to the first terminal of the fifth resistor, and the emitter of the seventh transistor functions as an output terminal of the current mirror unit.

[0011] Preferably, the amplification circuit is an eighth transistor, the base of the eighth transistor functions as the input terminal of the amplification circuit, the collector of the eighth transistor functions as the output terminal of the amplification circuit, and the emitter of the eighth transistor is grounded.

[0012] Preferably, the radio frequency front-end module further comprises a first inductor connected to the output terminal of the amplification circuit, the second terminal of the first inductor being used to connect to the power supply.

[0013] Preferably, the radio frequency front-end module further comprises a ninth transistor whose collector is connected to the collector of the second transistor and the base of the ninth transistor, respectively, and whose emitter is connected to the collector of the third transistor.

[0014] Preferably, the first transistor is an NPN transistor and the second transistor is a PNP transistor.

[0015] In a second embodiment, an embodiment of the present invention provides a radio frequency chip comprising the radio frequency front-end module described above. [Effects of the Invention]

[0016] Compared to the prior art, the radio frequency front-end module of the present invention is provided with a bias circuit in which a first terminal is used to connect to a power supply, a second terminal is used to connect to an external logic control circuit for controlling the on / off state of the amplification circuit, and a third terminal is used to output a bias current to the input terminal of the amplification circuit. As a result, the bias circuit can operate adaptively at different voltages without external intervention, thereby reducing energy consumption, saving costs, and extending the service life of the product. [Brief explanation of the drawing]

[0017] To more clearly explain the technical concept of the embodiments of the present invention, the drawings necessary for describing the embodiments are briefly described below. However, the drawings described below are merely examples of embodiments of the present invention, and those skilled in the art can obtain other drawings based on these without requiring any special ingenuity. [Figure 1] Figure 1 is an overall circuit diagram of a radio frequency front-end module according to an embodiment of the present invention. [Figure 2] Figure 2 is a V / I curve diagram for the case where the sixth resistor according to an embodiment of the present invention is 1000 ohms. [Figure 3]FIG. 3 is a V / I curve diagram when the sixth resistor in the embodiment of the present invention is 600 ohms.

Embodiments for Carrying Out the Invention

[0018] Hereinafter, the technical solutions of the embodiments of the present invention will be clearly and completely described. Of course, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, any other embodiments obtained by those skilled in the art without inventive labor shall fall within the protection scope of the present invention.

[0019] Embodiment 1 As shown in FIGS. 1 to 3, the embodiment of the present invention provides a radio frequency front-end module 100. The radio frequency front-end module 100 includes a signal input terminal 1, an input matching circuit 2, an amplification circuit 3, an output matching circuit 4, and a signal output terminal 5 that are electrically connected in sequence. The radio frequency front-end module 100 further includes a bias circuit 6 whose first terminal is used to connect to a power supply, and whose second terminal is used to connect to an external logic control circuit for controlling the on / off of the amplification circuit 3, and whose third terminal is used to output a bias current to the input terminal of the amplification circuit 3.

[0020] When the external logic control circuit outputs a high level, the amplification circuit 3 turns on. When the external logic control circuit outputs a low level, the amplification circuit 3 turns off. Of course, when the external logic control circuit outputs a high level, the amplification circuit 3 may turn off, and when the external logic control circuit outputs a low level, the amplification circuit 3 may turn on.

[0021] In this embodiment, the input matching circuit 2 is a first capacitor C1, and the output matching circuit 4 is a second capacitor C2.

[0022] The bias circuit 6 includes a current mirror circuit 61, a first transistor Q1, a second transistor Q2, a third transistor Q3, a first resistor R1, a second resistor R2, and a third resistor R3. The base of the first transistor Q1 functions as the second terminal of the bias circuit 6. The emitter of the first transistor Q1 is grounded. The collector of the first transistor Q1 is connected to the first terminal of the second resistor R2 and the first terminal of the third resistor R3, respectively. The second terminal of the second resistor R2 functions as the first terminal of the bias circuit 6 and is connected to the first terminal of the first resistor R1. The second terminal of the first resistor R1 is connected to the emitter of the second transistor Q2. The second terminal of the third resistor R3 is connected to the base of the second transistor Q2. The collector of the second transistor Q2 is connected to the collector of the third transistor Q3. The collector of the third transistor Q3 is further connected to the base of the third transistor Q3. The emitter of the third transistor Q3 is connected to the input terminal of the current mirror circuit 61. The output terminal of the current mirror circuit 61 functions as the third terminal of the bias circuit 6.

[0023] In this embodiment, the first transistor Q1 is an NPN transistor, and the second transistor Q2 is a PNP transistor. Specifically, by connecting the first transistor Q1 to the power supply through the second resistor R2 and connecting the second transistor Q2 to the power supply through the first resistor R1, the power supply satisfies a specific voltage range such as 3.5V to 5V. At the same time, the first resistor R1 and the second resistor R2 can supply a stable power supply to the second transistor Q2 and the third transistor Q3, respectively.

[0024] By connecting the collector and the base of the third transistor Q3 to form a diode form, the number of the plurality of third transistors Q3 can be increased according to the required voltage range of the power supply, which will not be described in detail here.

[0025] By outputting a high level from the external logic control circuit, the first transistor Q1 is turned on, and by outputting a low level from the collector of the first transistor Q1, the second transistor Q2 is turned on. A low level is output from the collector of the second transistor Q2 to the third transistor Q3, and a bias current is output from the emitter of the third transistor Q3 to the current mirror circuit 61. The current mirror circuit 61 outputs the adjusted bias current to the input terminal of the amplifier circuit 3, thereby realizing the on / off function of the amplifier circuit 3. When a high level is output from the external logic control circuit, the amplifier circuit 3 is turned on, and when a low level is output from the external logic control circuit, the amplifier circuit 3 is turned off. As a result, the bias circuit 6 can operate adaptively at different voltages without external intervention, thereby reducing energy consumption and extending the product's lifespan.

[0026] In this embodiment, the radio frequency front-end module 100 further comprises a fourth resistor R4, and the base of the first transistor Q1 is connected to the external logic control circuit via the fourth resistor R4 connected in series. The fourth resistor R4 adjusts the stability of the control signal output from the external logic control circuit and ensures the operational safety of the first transistor Q1.

[0027] In this embodiment, the current mirror circuit 61 includes a current mirror unit 611 and a voltage adjustment unit 612. The first terminal of the voltage adjustment unit 612 functions as an input terminal for the current mirror circuit 61, the second terminal of the voltage adjustment unit 612 is used to connect to an external linear constant voltage power supply (LDO), the third terminal of the voltage adjustment unit 612 is connected to the input terminal of the current mirror unit 611, and the output terminal of the current mirror unit 611 functions as an output terminal for the current mirror circuit 61. The voltage adjustment unit 612 is used to adjust the bias voltage output from the third transistor Q3, and the current mirror unit 611 is used to convert the bias voltage into a corresponding bias current and output it. The voltage adjustment unit 612 is used to adjust the current output from the third transistor Q3 to bring it within a control range at different voltages, and has a high voltage range control effect. At the same time, the current mirror circuit 61 converts the voltage output from the voltage adjustment unit 612 into a corresponding bias current, thereby effectively controlling the on / off state of the amplifier circuit 3.

[0028] In this embodiment, the voltage adjustment unit 612 includes a fourth transistor Q4, a fifth resistor R5, and a sixth resistor R6.

[0029] The base of the fourth transistor Q4 functions as the first terminal of the voltage adjustment unit 612, the collector of the fourth transistor Q4 functions as the second terminal of the voltage adjustment unit 612 and is connected to the first terminal of the fifth resistor R5, the emitter of the fourth transistor Q4 is connected to the first terminal of the sixth resistor R6, and the second terminal of the sixth resistor R6 functions as the third terminal of the voltage adjustment unit 612 and is connected to the second terminal of the fifth resistor R5.

[0030] In this embodiment, the current mirror unit 611 includes a fifth transistor Q5, a sixth transistor Q6, a seventh transistor Q7, and a seventh resistor R7. The collector of the fifth transistor Q5 functions as an input terminal of the current mirror unit 611. The collector of the fifth transistor Q5 is further connected to the base of the fifth transistor Q5 and the base of the seventh transistor Q7, respectively. The emitter of the fifth transistor Q5 is connected to the collector of the sixth transistor Q6 and the base of the sixth transistor Q6. The emitter of the sixth transistor Q6 is grounded. The collector of the seventh transistor Q7 is connected to the first terminal of the seventh resistor R7. The second terminal of the seventh resistor R7 is connected to the first terminal of the fifth resistor R5. The emitter of the seventh transistor Q7 functions as an output terminal of the current mirror unit 611.

[0031] In this embodiment, the amplification circuit 3 is an eighth transistor Q8, the base of the eighth transistor Q8 functions as the input terminal of the amplification circuit 3, the collector of the eighth transistor Q8 functions as the output terminal of the amplification circuit 3, and the emitter of the eighth transistor Q8 is grounded.

[0032] As an option, amplifier circuit 3 may be a bipolar transistor or a field-effect transistor, and is used to amplify the radio frequency signal. The small radio frequency signal is input to the base of the 8th transistor Q8 via the first capacitor C1, and the amplified radio frequency signal is output via the second capacitor C2.

[0033] In this embodiment, the radio frequency front-end module 100 further comprises a first inductor L1 connected to the output terminal of the amplification circuit 3, and the second terminal of the first inductor L1 is used to connect to the power supply.

[0034] In this embodiment, the radio frequency front-end module 100 further includes a ninth transistor Q9 whose collector is connected to the collector of the second transistor Q2 and the base of the ninth transistor Q9 respectively, and whose emitter is connected to the collector of the third transistor Q3.

[0035] In a specific implementation, the current output from the emitter of the third transistor Q3 is used to control the operating state of the fourth transistor Q4.

[0036] LDO_Out is controlled by the PAEN signal output from an external logic control circuit. When the PAEN signal is at a high level, a DC voltage such as 2.8V is output from LDO_Out; otherwise, LDO_Out is 0V.

[0037] [[ID=I1]] When the PAEN signal is at a low level, LDO_2.8V = 0V. At this time, no bias current is output from the collector of the third transistor Q3, and the eighth transistor Q8 does not operate.

[0038] When the PAEN signal is at a high level and VCC < LowLimitV (for example, LowLimitV = 3.6V), due to the PN junction voltage drop effect of the third transistor Q3, the ninth transistor Q , the fifth transistor Q5 and the sixth transistor Q6, insufficient drive current is supplied to the base of the fourth transistor Q4. As a result, the collector and emitter of the fourth transistor Q4 cannot be turned on, and thus, R' = R5.

[0039] When the PAEN signal is at a high level and VCC > LowLimitV (for example, LowLimitV = 3.6V), the base current of the fourth transistor Q4 increases, the resistance between the collector and emitter of the fourth transistor Q4 decreases, R' also decreases accordingly, and due to the current mirroring effect of the fifth transistor Q5, sixth transistor Q6, and seventh transistor Q7, the bias current output from the emitter of the seventh transistor Q7 gradually increases, and the operating state of the eighth transistor Q8 also changes synchronously.

[0040] Therefore, when VCC changes from a low voltage to a high voltage, the change in the base bias current of the 8th transistor Q8 is shown in Figure 2.

[0041] To increase the flexibility of the circuit design, the control range at different voltages can be adjusted by changing the resistance value of the sixth resistor R6. Below, we will use the cases where the sixth resistor R6 is 1000 ohms and 500 ohms as examples.

[0042] When the sixth resistor R6 = 1000 ohms, in the V / I curve shown in Figure 2, the current values ​​of both m1 and m2 are smaller than 0.8 mA, and the current value at this time is even smaller.

[0043] When the sixth resistor R6 = 500 ohms, in the V / I curve shown in Figure 3, the current values ​​of both m3 and m4 are greater than 1.12 mA, and the current value at this time is larger.

[0044] Example 2 An embodiment of the present invention provides a radio frequency chip comprising the above-described radio frequency front-end module 100.

[0045] It should be explained that in this specification, the terms “include,” “incorporate,” or any other variation thereof are intended to include non-exclusive inclusion, thereby including not only those elements but also other elements not explicitly listed, or elements specific to such process, method, article, or apparatus. Unless otherwise specified, an element limited by the phrase “includes XX” does not preclude the presence of other identical elements in a process, method, article, or apparatus that includes such element.

[0046] The above description is merely an embodiment of the present invention and does not limit the scope of the patent. Equivalent structural or process transformations, or direct or indirect applications to other related technical fields, based on the specifications and drawings of the present invention are all similarly included within the scope of the patent protection of the present invention. [Explanation of Symbols]

[0047] 100 Radio Frequency Front-End Module 1 Signal input terminal 2 Input Matching Circuit 3 Amplifier Circuit 4 Output matching circuit 5. Signal output terminals 6. Bias Circuit 61 Current Mirror Circuit 611 Current Mirror Unit 612 Voltage Regulating Unit

Claims

1. A radio frequency front-end module comprising, in order, electrically connected signal input terminals, input matching circuit, amplification circuit, output matching circuit, and signal output terminal, The device further comprises a bias circuit, the first terminal of which is used to connect to a power supply, the second terminal of which is used to connect to an external logic control circuit for controlling the on / off state of the amplification circuit, and the third terminal of which is used to output a bias current to the input terminal of the amplification circuit. The bias circuit includes a current mirror circuit, a first transistor, a second transistor, a third transistor, a first resistor, a second resistor, and a third resistor. A radio frequency front-end module characterized in that the base of the first transistor functions as the second terminal of the bias circuit, the emitter of the first transistor is grounded, the collector of the first transistor is connected to the first terminal of the second resistor and the first terminal of the third resistor, the second terminal of the second resistor functions as the first terminal of the bias circuit and is connected to the first terminal of the first resistor, the second terminal of the first resistor is connected to the emitter of the second transistor, the second terminal of the third resistor is connected to the base of the second transistor, the collector of the second transistor is connected to the collector of the third transistor, the collector of the third transistor is further connected to the base of the third transistor, the emitter of the third transistor is connected to the input terminal of the current mirror circuit, and the output terminal of the current mirror circuit functions as the third terminal of the bias circuit.

2. The radio frequency front-end module according to claim 1, further comprising a fourth resistor, wherein the base of the first transistor is connected to the external logic control circuit via the fourth resistor connected in series.

3. The radio frequency front-end module according to claim 1, wherein the current mirror circuit includes a current mirror unit and a voltage adjustment unit, the first terminal of the voltage adjustment unit functions as an input terminal of the current mirror circuit, the second terminal of the voltage adjustment unit is used to connect to an external linear constant voltage power supply, the third terminal of the voltage adjustment unit is connected to the input terminal of the current mirror unit, the output terminal of the current mirror unit functions as an output terminal of the current mirror circuit, the voltage adjustment unit is used to adjust the bias voltage output from the third transistor, and the current mirror unit is used to convert the bias voltage into a corresponding bias current and output it.

4. The voltage adjustment unit includes a fourth transistor, a fifth resistor, and a sixth resistor. The radio frequency front-end module according to claim 3, characterized in that the base of the fourth transistor functions as the first terminal of the voltage adjustment unit, the collector of the fourth transistor functions as the second terminal of the voltage adjustment unit and is connected to the first terminal of the fifth resistor, the emitter of the fourth transistor is connected to the first terminal of the sixth resistor, and the second terminal of the sixth resistor functions as the third terminal of the voltage adjustment unit and is connected to the second terminal of the fifth resistor.

5. The current mirror unit includes a fifth transistor, a sixth transistor, a seventh transistor, and a seventh resistor. The radio frequency front-end module according to claim 4, characterized in that the collector of the fifth transistor functions as an input terminal of the current mirror unit, the collector of the fifth transistor is further connected to the base of the fifth transistor and the base of the seventh transistor, the emitter of the fifth transistor is connected to the collector of the sixth transistor and the base of the sixth transistor, the emitter of the sixth transistor is grounded, the collector of the seventh transistor is connected to the first terminal of the seventh resistor, the second terminal of the seventh resistor is connected to the first terminal of the fifth resistor, and the emitter of the seventh transistor functions as an output terminal of the current mirror unit.

6. The radio frequency front-end module according to claim 1, characterized in that the amplification circuit is an eighth transistor, the base of the eighth transistor functions as an input terminal of the amplification circuit, the collector of the eighth transistor functions as an output terminal of the amplification circuit, and the emitter of the eighth transistor is grounded.

7. The radio frequency front-end module according to claim 1, further comprising a first inductor connected to the output terminal of the amplification circuit, wherein the second terminal of the first inductor is used to connect to the power supply.

8. The radio frequency front-end module according to claim 1, further comprising the 9th transistor, whose collector is connected to the collector of the second transistor and the base of the 9th transistor, respectively, and whose emitter is connected to the collector of the third transistor.

9. The radio frequency front-end module according to claim 1, characterized in that the first transistor is an NPN transistor and the second transistor is a PNP transistor.

10. A radio frequency chip characterized by comprising a radio frequency front-end module according to any one of claims 1 to 9.

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