Crystal pulling method, system, silicon single crystal, and medium for producing large-diameter silicon single crystals.

Abstract

Embodiments of this disclosure disclose a crystal pulling method, system, silicon single crystal, and medium for manufacturing large-diameter silicon single crystals. The method includes: performing a global two-dimensional simulation of the crystal pulling process to obtain a global temperature distribution, velocity field distribution, and initial solid-liquid interface value during the crystal pulling process under a preset crystal pulling apparatus model and preset crystal pulling parameters; determining boundary conditions according to the global temperature distribution and velocity field distribution; performing a local three-dimensional simulation of the crystal pulling process based on the boundary conditions to determine a target solid-liquid interface value; adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold range, and using the adjusted preset crystal pulling parameters as reference crystal pulling parameters; simulating and calculating simulation defects during the crystal pulling process according to the reference crystal pulling parameters; and iteratively optimizing the reference crystal pulling parameters according to the simulation defects until the simulation defects satisfy preset conditions, and using the optimized reference crystal pulling parameters as target crystal pulling parameters to manufacture a defect-free silicon single crystal.

Description

Technical Field

[0001] Cross-reference to Related Applications This application claims the priority of Chinese Patent Application No. 202410827909.8, filed in China on June 25, 2024, and all of its content is incorporated herein by reference. Embodiments of the present disclosure relate to the technical field of semiconductor manufacturing, and in particular, to a crystal pulling method, a system, a silicon single crystal, and a medium for manufacturing a large-diameter silicon single crystal.

Background Art

[0002] In recent years, with the development of semiconductor chips, in advanced process chips, the requirements for grown-in defects of silicon wafers have become increasingly strict. These grown-in defects include void defects (Crystal Originated Particle, COP) formed by the aggregation of vacancies, and large interstitial dislocation cluster defects (LDP) formed by the clustering of interstitial atoms. These defects may cause deterioration of gate insulation and leakage current in the back-end manufacturing process flow (Fabrication Process, Fab) recipe.

[0003] Currently, the mainstream crystal growth method for controlling crystal grown-in defects is based on the V / G theory of the Voronkov model. This model states that when the ratio V / G of the crystal pulling speed V to the temperature gradient G at the solid-liquid interface is greater than the key value ξ, COP defects will occur, and when V / G is less than the key value ξ, LDP defects will occur. Only when V / G is near the key value ξ can a defect-free crystal be obtained. However, since the key value ξ is not a fixed value, in related technologies, in order to obtain a defect-free crystal, usually, a large number of trials are required to determine the distribution of defects under different hot zones and different process conditions. As a result, the cost of defect-free crystals is high.

Summary of the Invention

[0004] In view of this, the embodiments of the present disclosure aim to provide a crystal pulling method, system, silicon single crystal, and medium for producing large-diameter silicon single crystals, which can be manufactured by rapidly determining crystal pulling parameters by numerical simulation calculations and effectively controlling the flow of silicon molten metal using these parameters to stably form large-diameter silicon single crystals, thereby solving the problem of high production costs for defect-free crystals in related technologies. [Means for solving the problem]

[0005] In the first aspect, the embodiments of the present disclosure are crystal pulling methods for producing large-diameter silicon single crystals, To perform a global two-dimensional simulation of the crystal pulling process and obtain the global temperature distribution, velocity field distribution, and initial solid-liquid interface values ​​during the crystal pulling process under a preset crystal pulling apparatus model and preset crystal pulling parameters, The boundary conditions are determined according to the global temperature distribution and the velocity field distribution, and based on the boundary conditions, a local three-dimensional simulation is performed on the crystal pulling process to determine the target solid-liquid interface value. In a global two-dimensional simulation, the preset crystal pulling parameter is adjusted until the initial solid-liquid interface value and the target solid-liquid interface value become equal within a threshold range, and the adjusted preset crystal pulling parameter is used as the reference crystal pulling parameter. The simulation calculation of simulation defects in the crystal pulling process is performed according to the aforementioned reference crystal pulling parameters, Depending on the simulation defect, the reference crystal pulling parameter is iteratively optimized until the simulation defect satisfies the preset conditions, and the optimized reference crystal pulling parameter is set as the target crystal pulling parameter. The present invention provides a crystal pulling method that includes producing a defect-free silicon single crystal using the target crystal pulling parameters, which include hot zone parameters and crystal pulling process parameters.

[0006] In some cases, determining the target solid-liquid interface value by performing a local three-dimensional simulation of the crystal pulling process based on the aforementioned boundary conditions is possible. The simulation scene is determined according to the aforementioned boundary, and a simulation magnetic field is added to the simulation scene to perform a three-dimensional simulation of the crystal pulling process. This includes determining the target solid-liquid interface value based on the hot zone parameters in the three-dimensional simulation process, the physical properties of single-crystal silicon, the turbulence model of the silicon molten liquid, and the flow boundary layer.

[0007] In some examples, the threshold range included in the step of adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value are equal within the threshold range is within 10%.

[0008] In some examples, the step of simulating and calculating the simulation defects in the crystal pulling process according to the above-mentioned reference preset crystal pulling parameters is: To determine the distribution of crystal pulling parameters in the initial state of crystal pulling, Based on the aforementioned crystal pulling parameter distribution, the defect distribution in the initial state of crystal pulling is simulated, This includes correcting the defect distribution according to a correction coefficient, and determining the defect clusters in the initial state of crystal pulling based on the corrected defect distribution.

[0009] In some examples, the defect distribution includes the point defect concentration of interstitial atoms and the vacancy point defect concentration. Correcting the defect distribution according to the correction coefficient described above means This includes determining a correction coefficient based on historical data, and correcting at least one of the interstitial atom point defect concentration and vacancy defect concentration based on the correction coefficient.

[0010] In some cases, when correcting the point defect concentration of the interstitial atoms, the correction coefficient is between 1.0 and 1.3.

[0011] In some examples, the preset crystal pulling parameters include the viscosity and thermal conductivity of the molten material. Adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value become equal within the threshold range is: This includes adjusting the material viscosity and / or thermal conductivity until the initial solid-liquid interface value and the target solid-liquid interface value become equal within a threshold range.

[0012] In some examples, iteratively optimizing the reference crystal pulling parameters in response to the aforementioned simulation defects until the simulation defects satisfy preset conditions includes setting the optimized reference crystal pulling parameters as target crystal pulling parameters when the simulation defects satisfy COP and P-band (V-Cluster > 25 nm), Pv (V-Cluster = 12 to 25 nm), Pi (V-Cluster < 12 nm and I-Cluster < 0.5 nm), and LDP (I-Cluster < 0.5 nm).

[0013] In the second aspect, an embodiment of the present disclosure is a crystal pulling system for manufacturing large-diameter silicon single crystals, A parameter acquisition module for performing a global two-dimensional simulation of the crystal pulling process and obtaining the global temperature distribution, velocity field distribution, and initial solid-liquid interface value during the crystal pulling process under a preset crystal pulling apparatus model and preset crystal pulling parameters, and A first determination module for determining boundary conditions according to the global temperature distribution and the velocity field distribution, and for determining the target solid-liquid interface value by performing a local three-dimensional simulation of the crystal pulling process based on the boundary conditions, In a global two-dimensional simulation, a first adjustment module adjusts the preset crystal pulling parameter until the initial solid-liquid interface value and the target solid-liquid interface value become equal within a threshold range, and uses the adjusted preset crystal pulling parameter as the reference crystal pulling parameter. A second deterministic module that simulates and calculates simulation defects in the crystal pulling process according to the reference crystal pulling parameters, A second adjustment module that iteratively optimizes the reference crystal pulling parameter in response to the simulation defect until the simulation defect satisfies the preset conditions, and sets the optimized reference crystal pulling parameter as the target crystal pulling parameter, A crystal pulling system is provided, which includes a crystal manufacturing module for producing a defect-free silicon single crystal using the target crystal pulling parameters, which include hot zone parameters and crystal pulling process parameters.

[0014] In the third phase, the embodiments of the present disclosure are silicon single crystals, The aforementioned silicon single crystal was manufactured based on the crystal pulling method for producing a large-diameter silicon single crystal described in any one of the first sections. The present invention provides a silicon single crystal in which the number of defects in any wafer obtained from the aforementioned silicon single crystal that result in a vacancy defect dimension of 19 nm is 25 or less.

[0015] In the fourth aspect, embodiments of the present disclosure provide an electronic device including a processor and memory, wherein the processor is for executing instructions stored in the memory so that the crystal pulling method for producing a large-diameter silicon single crystal described in the first aspect is realized.

[0016] In a fifth aspect, an embodiment of the present disclosure provides a computer storage medium storing at least one instruction, where the at least one instruction is for being executed by a processor to implement the crystal pulling method for manufacturing a large-diameter silicon single crystal described in the first aspect.

Advantages of the Invention

[0017] Embodiments of the present disclosure provide a crystal pulling method, a system, a silicon single crystal, and a medium for manufacturing a large-diameter silicon single crystal. In addition to two-dimensional simulation, three-dimensional simulation is used to determine a target solid-liquid interface value, and further preset crystal pulling parameters are adjusted so that the solid-liquid interface value in the two-dimensional simulation process is the same as that in the three-dimensional simulation, thereby improving the simulation accuracy of the crystal pulling process. On the one hand, by determining the boundary conditions of the three-dimensional simulation according to the global temperature distribution and velocity field distribution obtained by the two-dimensional simulation, the model size of the three-dimensional simulation can be reduced, the simulation parameters can be reduced, and the simulation efficiency can be improved. Moreover, in the simulation process, the crystal pulling parameters are optimized according to the simulation defects, so that the target crystal pulling parameters obtained by the simulation can be directly used for the production of defect-free wafers. Through simulation, a large number of trial-and-error processes can be avoided, the experimental materials and time costs can be significantly reduced, and further, the adjustment time in the production process can be reduced and the production efficiency can be improved.

Brief Description of the Drawings

[0018] [Figure 1] FIG. 1 is a flowchart of a crystal pulling method for manufacturing a large-diameter silicon single crystal according to an embodiment of the present disclosure. [Figure 2] FIG. 2 is a schematic diagram of the temperature distribution of two-dimensional simulation according to an embodiment of the present disclosure. [Figure 3]Figure 3 is a schematic diagram of the temperature distribution in a three-dimensional simulation according to an embodiment of the present disclosure. [Figure 4] Figure 4 is a flowchart showing the determination of simulation defects according to the embodiments of this disclosure. [Figure 5] Figure 5 is a schematic diagram illustrating a comparison of defects related to thermal stress and correction coefficients according to an embodiment of the present disclosure. [Figure 6] Figure 6 is a flowchart of a crystal pulling method for producing another large-diameter silicon single crystal according to an embodiment of the present disclosure. [Figure 7] Figure 7 is a comparison of the defect simulation results and experimental results of a variable crystal growth pulling rate test according to the embodiment of this disclosure. [Figure 8] Figure 8 is a comparison of the defect simulation results and experimental results of a constant crystal growth rate test according to the embodiment of this disclosure. [Figure 9] Figure 9 is a schematic diagram of the structure of a crystal pulling system for producing large-diameter silicon single crystals according to an embodiment of the present disclosure. [Figure 10] Figure 10 is a schematic diagram of the structure of an electronic device according to an embodiment of the present disclosure. [Modes for carrying out the invention]

[0019] While the drawings above illustrate clear embodiments of the present disclosure, a more detailed description follows. These drawings and textual descriptions are not intended to limit the scope of the concepts of the present disclosure in any way, but rather to illustrate the concepts of the present disclosure to those skilled in the art by reference to specific embodiments.

[0020] Herein, exemplary embodiments are described in detail, examples of which are shown in the drawings. Where the following description relates to the drawings, unless otherwise specified, the same numbers in different drawings indicate the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present disclosure. Rather, they are merely examples of apparatuses and methods consistent with some aspects of the present disclosure, as detailed in the appended claims.

[0021] In the field of semiconductor material fabrication, crystal pulling simulation technology plays an extremely important role, particularly in the growth process of single-crystal silicon. Crystal pulling simulation technology uses numerical simulation methods to predict and optimize physical phenomena in the crystal growth process, such as temperature distribution, solid-liquid interface shape, crystal stress, and defect formation.

[0022] Simulation techniques in related technologies can predict defect distribution during crystal growth, reduce defects through adjustment of crystal pulling parameters, and improve crystal quality. While related crystal pulling simulation techniques have advanced significantly, they still face several challenges, specifically as follows: While related two-dimensional simulation techniques can quickly calculate fundamental crystal growth parameters such as temperature distribution and velocity field, they generally assume axisymmetric crystal growth and ignore complex three-dimensional effects that may occur during the actual crystal growth process, such as thermal stress, crystalline stress, and asymmetric flow. These factors can lead to the formation of defects within the crystal, such as void defects (COPs) and large interstitial dislocation clusters (LDPs), which significantly impact the performance of semiconductor devices. While related three-dimensional simulation techniques can more accurately capture the complexity of crystal growth, including asymmetric flow and heat transfer, three-dimensional simulations require processing more data and more complex boundary conditions than two-dimensional simulations, resulting in significantly longer computation times. In actual production environments, obtaining simulation results quickly is crucial for real-time adjustment and optimization of process parameters. Next, the crystal pulling process involves multiple interdependent process parameters, such as pulling speed, temperature control, and rotation speed. Relevant simulation techniques have limitations in optimizing these parameters, making it difficult to find optimal process conditions and produce high-quality single-crystal silicon by simultaneously considering multiple related factors.

[0023] Based on this, the present disclosure first provides a crystal pulling method for producing a large-diameter silicon single crystal, and with reference to Figure 1, the crystal pulling method for producing a large-diameter silicon single crystal may include steps S110 to S160.

[0024] In step S110, a global two-dimensional simulation is performed on the crystal pulling process to obtain the global temperature distribution, velocity field distribution, and initial solid-liquid interface value during the crystal pulling process under a preset crystal pulling apparatus model and preset crystal pulling parameters.

[0025] In some exemplary embodiments of this disclosure, a global two-dimensional simulation of the crystal pulling process may be performed first. Specifically, a two-dimensional simulation of the crystal pulling process may be performed on a preset crystal pulling apparatus model based on preset crystal pulling parameters to obtain the global temperature distribution, velocity field distribution, and initial solid-liquid interface values ​​in the crystal pulling process.

[0026] The global temperature distribution may include the temperature distributions at which the crystal grows to each dimension during the crystal pulling process. For example, this could include the temperature distribution when the crystal grows to 100 mm, the temperature distribution when it grows to 200 mm, and so on.

[0027] When performing a two-dimensional simulation of the crystal pulling process described above, the process of the crystal 21 in the crystal growth furnace may be simulated by referring to Figure 2. The crystal growth furnace may include a heat shield 22, a reflector, a crucible 24, a heater 25, thermal insulation material 26, etc., and the crystal raw material melt 23 is contained in the crucible 24.

[0028] The crucible, in particular, has a two-layer structure consisting of an inner quartz crucible and an outer graphite crucible. It serves as a container for holding the molten metal and is usually made of high-temperature resistant material. A heater 25 is surrounded on the outside of the crucible to supply heat for crystal growth, and thermal insulation material is surrounded on the outside of the heater to reduce heat loss and maintain a stable temperature inside the furnace. A reflector is provided above the crucible. The flow guide tube's role is to block high-temperature radiant heat from the silicon molten metal in the crucible, the heater, or the side walls of the crucible during the crystal growth process. It also suppresses the diffusion of heat to the low-temperature water cooler near the solid-liquid interface that forms the crystal growth interface, and controls the temperature gradient along the axial direction of the crystal center and outer periphery together with the water cooler. Within the crystal growth furnace, it acts as a component to disperse heat and protect the crystal from direct radiation, and the temperature values ​​indicated on it represent different temperature ranges.

[0029] In the two-dimensional simulation process, the temperature distribution of each component may be obtained as the global temperature distribution in the two-dimensional simulation process. When calculating the initial solid-liquid interface value based on preset crystal pulling parameters, the location of the solid-liquid interface may be determined first. The solid-liquid interface is a key region for crystal growth, and its shape and stability directly affect crystal quality and defect formation. Next, the initial solid-liquid interface value may be calculated at the solid-liquid interface according to the physical model and numerical simulation results. The specific calculation flow of the initial solid-liquid interface value can be found in related technologies and will not be elaborated in this exemplary embodiment.

[0030] In step S120, boundary conditions are determined according to the global temperature distribution and velocity field distribution, and a local three-dimensional simulation is performed on the crystal pulling process based on the boundary conditions to determine the target solid-liquid interface value.

[0031] In some exemplary embodiments of this disclosure, boundary conditions for a three-dimensional simulation may be determined in accordance with the global temperature distribution and velocity field distribution in the simulation results of a two-dimensional simulation process. Specifically, the boundary conditions may include temperature fields and velocity fields, and the boundary conditions may be determined specifically in the output of the two-dimensional simulation and used to determine the boundaries of the three-dimensional simulation, i.e., used to constrain the model dimensions in the three-dimensional simulation process and reduce the overall computational load in the simulation process.

[0032] For example, as shown in Figure 3, in the growth of a large single-crystal silicon crystal measuring 300 mm, a horizontal magnetic field is used to pull the crystal up, resulting in a three-dimensional and asymmetric flow within the molten metal. Therefore, to more accurately simulate the actual conditions of growing a 300 mm semiconductor single-crystal silicon, a three-dimensional simulation must be used. When obtaining the model for the above three-dimensional simulation, it is also possible to obtain a portion of the two-dimensional simulation model as the three-dimensional simulation model depending on the boundary conditions.

[0033] In some examples of this disclosure, after determining the boundary conditions for the three-dimensional simulation, necessary horizontal magnetic fields, cusp (CUSP) magnetic fields, etc., may be added, and the target solid-liquid interface value in the three-dimensional simulation process may be calculated based on the hot zone parameters, physical properties of single-crystal silicon, turbulence model of the silicon molten liquid, flow boundary layer, etc., in the simulation process. Specifically, the input values ​​of parameters such as the hot zone parameters, physical properties of single-crystal silicon, turbulence model of the silicon molten liquid, and flow boundary layer may be used in calculation software for calculating the target solid-liquid interface value to obtain the above target solid-liquid interface value, but the specific type of calculation software is not specifically limited in this exemplary embodiment and should be referred to related technologies.

[0034] Among these, hot zone parameters refer to a set of parameters that affect heat distribution and heat transfer during the crystal growth process. These parameters may include heater temperature, heat flux density, cooling rate, thermal conductivity of the insulating material, and the geometric structure of the crystal growth furnace. Single-crystal silicon property parameters refer to parameters that describe the physical and chemical properties of single-crystal silicon, such as thermal conductivity, specific heat capacity, density, melting point, crystal structure, and doping concentration. Turbulence models are mathematical models for describing and predicting turbulent flow, taking into account factors such as fluid viscosity, velocity distribution, and temperature gradient. A flow boundary layer refers to a fluid layer near a solid surface, where the fluid velocity gradually transitions from zero (velocity at the solid surface) to free-flow velocity. In crystal growth, the behavior of the flow boundary layer affects heat transfer, mass transport, and defect transport. For example, optimizing the characteristics of the flow boundary layer, such as thickness and velocity distribution, can help control the quality and speed of crystal growth.

[0035] In step S130, the global two-dimensional simulation adjusts the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value become equal within the threshold range, and the adjusted preset crystal pulling parameters are used as the reference crystal pulling parameters.

[0036] In some exemplary embodiments of this disclosure, after determining the target solid-liquid interface value, the preset crystal pulling parameters may be adjusted based on the target solid-liquid interface value, and parameter fitting may be performed on the three-dimensional simulation process so that the initial solid-liquid interface value is equal to the target solid-liquid interface value within a threshold range, and the adjusted preset crystal pulling parameters may be used as reference crystal pulling parameters. Specifically, the material viscosity value and / or thermal conductivity of the molten metal may be adjusted in the crystal pulling parameters, and parameter fitting may be performed on the three-dimensional simulation process.

[0037] The threshold range mentioned above represents an acceptable error range and may be a 10% error range, or it may be a specific numerical value, for example, 1 to 2 mm. Of course, the specific numerical value can be customized according to the user's needs, and this is not elaborated upon in this exemplary embodiment.

[0038] In step S140, simulation defects in the crystal pulling process are calculated according to the reference crystal pulling parameters.

[0039] In some exemplary embodiments of this disclosure, after calculating and obtaining the above-mentioned reference crystal pulling parameters, simulation defects in the crystal pulling process may be simulated according to the above-mentioned reference crystal pulling parameters. Specifically, initial steady-state calculations, defect cluster calculations, etc., may be performed based on two-dimensional simulations according to the above-mentioned reference crystal pulling parameters so that simulation defects in the crystal pulling process are simulated.

[0040] In step S150, the reference crystal pulling parameters are iteratively optimized according to the simulation defects until the simulation defects satisfy the preset conditions, and the optimized reference crystal pulling parameters are set as the target crystal pulling parameters.

[0041] In one exemplary embodiment disclosed, after obtaining simulation defects, the reference crystal pulling parameters may be adjusted according to the simulation defects, the simulation defects may be recalculated, and the process of adjusting the reference crystal pulling parameters may be performed cyclically, for example, until the simulation defects satisfy a preset condition. The preset condition may be that the number of simulation defects obtained is the minimum, i.e., the optimal reference crystal pulling parameters have been obtained, or that the quantity of simulation defects satisfies a process requirement, the process requirement can be set according to the user's needs, and this is not elaborated in this exemplary embodiment.

[0042] It should be explained that in adjusting the reference crystal pulling parameters, some or all of the reference crystal pulling parameters may be adjusted according to crystal pulling experience and V / G theory, and the specific parameters to be adjusted can be set according to the user's needs, which will not be elaborated in this exemplary embodiment.

[0043] In step S160, a defect-free silicon single crystal is manufactured using target crystal pulling parameters, which include hot zone parameters and crystal pulling process parameters.

[0044] After obtaining the target crystal pulling parameters described above, a defect-free single crystal may be obtained based on a crystal pulling process using these target parameters. The target crystal pulling parameters include hot zone parameters and crystal pulling process parameters, and the crystal pulling process parameters may include the pulling speed, temperature control, rotation speed, gas environment, crucible position, dopant type, concentration and addition time, crystal diameter, cooling rate, etc. The specific details of the crystal pulling process parameters can be added or removed depending on the process requirements, and this exemplary embodiment does not require further explanation.

[0045] The crystal pulling method for manufacturing large-diameter silicon single crystals according to the embodiments of this disclosure utilizes three-dimensional simulation in addition to two-dimensional simulation to determine the target solid-liquid interface value, and further adjusts preset crystal pulling parameters so that the solid-liquid interface value in the two-dimensional simulation process is the same as the solid-liquid interface value in the three-dimensional simulation, thereby improving the simulation accuracy for the crystal pulling process. On the other hand, by determining the boundary conditions of the three-dimensional simulation according to the global temperature distribution obtained in the two-dimensional simulation, the model dimensions of the three-dimensional simulation can be reduced, the simulation parameters can be reduced, and the simulation efficiency can be improved. Furthermore, since the crystal pulling parameters are optimized according to the simulation defects during the simulation process, the target crystal pulling parameters obtained in the simulation can be used directly for the production of defect-free wafers. Through simulation, a large amount of trial and error can be avoided, experimental material and time costs can be significantly reduced, and adjustment time in the production process can be reduced, thereby improving production efficiency.

[0046] In some exemplary embodiments of this disclosure, the preset crystal pulling parameters may include the material viscosity and thermal conductivity of the molten metal, hot zone conditions in the simulation process, and crystal pulling process parameters.

[0047] In the process of adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value are equal within the threshold range, and using the adjusted preset crystal pulling parameters as the reference crystal pulling parameters, parameters that affect the solid-liquid interface value may also be adjusted. These parameters can be obtained through experience or experimentation, and the specific acquisition process will not be elaborated upon here. For example, one or more of the above-mentioned material viscosity value and thermal conductivity may be adjusted so that the initial solid-liquid interface value and the target solid-liquid interface value are equal within the threshold range.

[0048] For example, the material viscosity values ​​at different crystal lengths during the crystal growth process may be adjusted so that the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold range. For instance, Table 1 shows the material viscosity values ​​of the molten metal set at different crystal lengths when fitting the initial solid-liquid interface value and the target solid-liquid interface value to be equal within a threshold range.

[0049] [Table 1]

[0050] As can be seen from Table 1, in order to make the initial solid-liquid interface value and the target solid-liquid interface value equal at different crystal lengths, it is necessary to set different or the same viscosity values ​​for the molten material. In other words, it is necessary to prepare different viscosity values ​​for the molten material depending on the current length of the generated crystal.

[0051] In some exemplary embodiments of the present disclosure, with reference to Figure 4, steps S410 to S440 may be included when determining simulation defects in the crystal pulling process according to the adjusted preset crystal pulling parameters.

[0052] In step S410, the distribution of crystal pulling parameters in the initial state of crystal pulling is determined.

[0053] In some exemplary embodiments of this disclosure, the initial state of crystal pulling may be when the crystal length is 100 mm or when the crystal is 200 mm long. The specific length of the crystal in the initial state of crystal pulling can be customized according to the user's needs, and this is not elaborated in these exemplary embodiments.

[0054] Among these, the crystal pulling parameter distribution may include the temperature distribution, velocity distribution, and stress distribution within the crystal pulling furnace during the initial state of crystal pulling.

[0055] Specifically, crystal simulation software may be used to perform initial steady-state calculations for the initial crystal pulling state described above. It should be noted that the thermal stress distribution may be calculated simultaneously during the calculation. This eliminates the influence of thermal stress on defects, further improving the accuracy of the resulting target crystal pulling parameters.

[0056] For example, referring to Figure 5, "Without Stress" means that the effect of thermal stress on point defect concentration is not considered during the simulation process, while "With Stress" means that the effect of thermal stress is considered during the simulation. By considering thermal stress, the distribution and concentration of point defects can be changed.

[0057] Of these, the top and tail represent two different regions in the crystal growth process, and specifically, they may be the ends of the crystal. The interstitial radius Rv [nm] represents the volume or dimension of the interstitial sites within the lattice, where the unit is nanometers (nm). As can be seen from Figure 5, the distribution and concentration of point defects are altered by thermal stress. Therefore, in this exemplary embodiment, the thermal stress distribution is calculated when determining the parameter distribution. As a result, the accuracy of the obtained target crystal pulling parameters can be increased and matched more closely with actual experimental data.

[0058] In step S420, the defect distribution in the initial state of crystal pulling is simulated based on the parameter distribution.

[0059] In some exemplary embodiments of this disclosure, the defect distribution includes the point defect concentration of interstitial atoms and the vacancy point defect concentration. After obtaining the parameter distribution, the initial point defect distribution within the crystal in a steady state may be calculated based on the parameter distribution. Specific calculation methods can be found in the relevant art and are not elaborated in these exemplary embodiments.

[0060] In step S430, the defect distribution is corrected according to the correction coefficient, and the defect clusters in the initial state of crystal pulling are determined based on the corrected defect distribution.

[0061] In some examples of this disclosure, a correction factor may be obtained based on historical data, specifically, the correction factor may be determined according to a specific historical defect distribution and the actual defect distribution in a historical experiment, and the defect distribution may be corrected with the above correction factor.

[0062] Among these, the above correction coefficients may include correction coefficients for the concentration of interstitial atom point defects and correction coefficients for the concentration of vacancy point defects. The specific values ​​of the correction coefficients can be obtained from a large amount of historical data, and no further explanation of the specific data is provided.

[0063] In some examples, the above correction coefficient includes a correction coefficient for the interstitial atom point defect concentration Ci, and the correction coefficient is assumed to be approximately 1.0 to 1.3. In some embodiments, the correction coefficient may be increased up to 1.1, and by multiplying the point defect concentration Ci by a coefficient of 1.1, a defect distribution result consistent with the experiment may be obtained. The interstitial atom point defect concentration may also be corrected according to the above correction coefficient, thereby obtaining a more accurate defect distribution and even more precise target crystal pulling parameters.

[0064] Referring to Figure 5, the adjusted interstitial atom point defect concentration (Ci adjusted) is shown to have been adjusted after comparative analysis based on simulation results and experimental data. In this way, the physical phenomena in the actual crystal growth process can be reflected more accurately.

[0065] After correcting the above defect distribution, a defect cluster calculation may be performed on the initial state of crystal pulling based on the corrected defect distribution. Specifically, the defect cluster calculation function in the crystal simulation software may be used to simulate how point defects aggregate to form larger defect clusters. The specific calculation process can be found in related technologies and will not be elaborated here.

[0066] In step S440, the simulation defects during the crystal pulling process are determined according to the defect clusters in the initial state of crystal pulling and the reference crystal pulling parameters.

[0067] In some exemplary embodiments of this disclosure, after determining the defect clusters in the initial crystal pulling state, simulation defects in the crystal pulling process may be determined according to the defect clusters in the initial crystal pulling state and the reference crystal pulling parameters.

[0068] Specifically, the defect clusters in the initial state of crystal pulling and the reference crystal pulling parameters may be used as input parameters, and the crystal simulation software CGSim may be used to obtain the simulated defects in the crystal pulling process.

[0069] After obtaining the above crystal pulling defects, the above reference crystal pulling parameters may be adjusted according to the above simulation defects until the above simulation defects satisfy the preset conditions.

[0070] In some examples, the above preset conditions may be COP (V-Cluster > 25nm), Pv (V-Cluster = 12~25nm), Pi (V-Cluster < 12nm and I-Cluster < 0.5nm), and LDP (I-Cluster < 0.5nm).

[0071] Of these, COP (Crystal Originated Particle) defects represent vacancy clusters, Pv defects refer to defect-free regions where vacancies are dominant, Pi defects refer to defect-free regions where interstitial atoms are dominant, LDP defects refer to large dislocation pits caused by interstitial atoms, I-Cluster (Interstitial Cluster) represents the dimensions of interstitial clusters, and V-Cluster (Vacancy Cluster) represents the dimensions of vacancy defects.

[0072] It should be noted that the above preset conditions are illustrative examples, and the specific form of the preset conditions can be set according to the process requirements; therefore, no further explanation is needed in this exemplary embodiment.

[0073] When the hot zone parameters and / or crystal pulling process parameters in the above reference crystal pulling parameters are adjusted so that the above simulation defects satisfy the preset conditions, the adjusted reference crystal pulling parameters are output as target crystal pulling parameters and used as the crystal pulling parameters during crystal rod production. For example, the above target crystal pulling parameters may include: Maximum Gaussian Plane Position (MGP) being between -200 mm and 150 mm; Magnetic Intensity (MI) being between 2500 G and 3800 G; Crystal Rotation (S / R) being between 8 rpm and 12 rpm; Crucible rotation speed being between -0.2 rpm and 2.5 rpm; Argon Gas Flow Rate (ArGFR) being between 60 slm and 220 slm; and Furnace Pressure (FP) being between 20 Tor and 100 Tor.

[0074] It should be explained that the above-mentioned target crystal pulling parameters, including their types and specific values, are merely illustrative examples. It is possible to customize and set the target crystal pulling parameters and their specific values ​​according to the user's needs, and no further explanation is needed here.

[0075] A crystal pulling method for producing a large-diameter silicon single crystal according to an embodiment of the present disclosure will be described below with reference to Figure 6, and this method may include the following steps S610 to S612.

[0076] Step S610 involves performing a global two-dimensional simulation of the crystal pulling process to obtain the global temperature distribution, velocity field distribution, and initial solid-liquid interface values ​​during the crystal pulling process under a preset crystal pulling apparatus model and preset crystal pulling parameters.

[0077] Step S620 involves determining boundary conditions according to the global temperature distribution and velocity field distribution, and then performing a local three-dimensional simulation of the crystal pulling process based on the boundary conditions to determine the target solid-liquid interface value.

[0078] Step S630 is to adjust the viscosity and / or thermal conductivity of the molten metal.

[0079] Step S640 is to determine whether the initial solid-liquid interface value is equal to the target solid-liquid interface value. Otherwise, step S630 is performed; if so, step S650 is performed to determine the parameter distribution in the initial state of crystal pulling.

[0080] Step S660 is to determine the defect distribution in the initial state of crystal pulling based on the parameter distribution.

[0081] Step S670 involves correcting the defect distribution according to the correction coefficient and determining the defect clusters in the initial state of crystal pulling based on the corrected defect distribution.

[0082] Step S680 is to determine the simulation defects during the crystal pulling process, depending on the defect clusters in the initial state of crystal pulling and the reference crystal pulling parameters.

[0083] Step S690 is to adjust the hot zone parameters and crystal pulling process parameters according to the simulation defects.

[0084] Step S611 is to determine whether the simulation defect satisfies the preset conditions. Otherwise, step S690 is executed; if so, step S612 is executed and the target crystal pulling parameters are output.

[0085] The specific details of steps S610 to S612 above have already been explained in detail above, so I will not elaborate further here.

[0086] In some examples, Figure 7 is a comparison of defect simulation results and experimental results for a variable crystal growth pulling rate test according to the embodiments of this disclosure. Referring to Figure 7, the comparison results show that the distribution of defect simulation results in the axial direction of the crystal is consistent with the experimental results, and the pulling rate of the defect-free region in the simulation results is less than 1% of the actual pulling rate.

[0087] Figure 8 is a comparison of the defect simulation results and experimental results for a constant crystal growth rate test according to the embodiment of this disclosure. Referring to Figure 8, the comparison results show that the radial defect simulation results of the crystal are in agreement with the experimental results, and the agreement between the radial defect simulation results and the experimental results reaches more than 90%. As can be seen from Figure 8, the simulation results for 19 nm local laser scatter (LLS) defects also show a high degree of agreement with the experimental results.

[0088] As can be seen by referring to Figures 7 and 8, the simulation results obtained by the crystal pulling method for producing large-diameter silicon single crystals according to the embodiments of this disclosure show high agreement with the experimental results, and furthermore, the accuracy of the obtained target crystal pulling parameters is also high.

[0089] As can be seen from the above, the crystal pulling method for manufacturing large-diameter silicon single crystals according to the embodiments of this disclosure can improve the simulation accuracy of the crystal pulling process by using three-dimensional simulation in addition to two-dimensional simulation to determine the target solid-liquid interface value, and further adjusting the preset crystal pulling parameters so that the solid-liquid interface value in the two-dimensional simulation process is the same as the solid-liquid interface value in the three-dimensional simulation. On the other hand, by determining the boundary conditions of the three-dimensional simulation according to the global temperature distribution obtained in the two-dimensional simulation, the model dimensions of the three-dimensional simulation can be reduced, the simulation parameters can be reduced, and the simulation efficiency can be improved. Furthermore, since the crystal pulling parameters are optimized according to the simulation defects in the simulation process, the target crystal pulling parameters obtained in the simulation can be used directly for the production of defect-free wafers. Through simulation, a large amount of trial and error can be avoided, experimental material and time costs can be significantly reduced, and adjustment time in the production process can be reduced, improving production efficiency. Moreover, by adjusting the above defect distribution using a correction coefficient, the accuracy of the target crystal pulling parameters obtained according to the simulation defects can be further improved, and the quality of the crystal rods produced according to the target crystal pulling parameters can be further improved.

[0090] Furthermore, this disclosure provides a crystal rod, which is manufactured by performing crystal pulling according to the target crystal pulling parameters obtained in the crystal pulling method for manufacturing the large-diameter silicon single crystal, and the number of defects in any wafer obtained from the crystal rod such that the vacancy defect dimension is 19 nm is 25 or less, and the specific process of the crystal pulling method for manufacturing the large-diameter silicon single crystal has already been explained in detail above, so no further explanation is provided here.

[0091] It should be explained that the specific numerical values ​​of the vacancy defect dimensions and the number of defects in any wafer obtained from the aforementioned crystal rod can be set according to the user's needs. For example, the number of defects resulting in a vacancy defect dimension of 20 nm on the wafer may be 24 or less, or the number of defects resulting in a vacancy defect dimension of 35 nm on the wafer may be 12 or less, but we will not elaborate further in this example.

[0092] Furthermore, the present disclosure provides a crystal pulling system for manufacturing large-diameter silicon single crystals, and as shown in Figure 9, the crystal pulling system 900 for manufacturing large-diameter silicon single crystals may include a parameter acquisition module 910, a first determination module 920, a first adjustment module 930, a second determination module 940, a second adjustment module 950, and a crystal manufacturing module 960.

[0093] The parameter acquisition module 910 may perform a global two-dimensional simulation of the crystal pulling process to acquire the global temperature distribution, velocity field distribution, and initial solid-liquid interface value during the crystal pulling process under a preset crystal pulling apparatus model and preset crystal pulling parameters.

[0094] The first determination module 920 may be used to determine boundary conditions according to the global temperature distribution and the velocity field distribution, and to perform a local three-dimensional simulation of the crystal pulling process based on the boundary conditions to determine the target solid-liquid interface value.

[0095] The first adjustment module 930 may be used in a global two-dimensional simulation to adjust the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value become equal within a threshold range, and to use the adjusted preset crystal pulling parameters as reference crystal pulling parameters.

[0096] The second definitive module 940 iteratively optimizes the reference crystal pulling parameters in response to the simulation defects until the simulation defects satisfy the preset conditions, and sets the optimized reference crystal pulling parameters as the target crystal pulling parameters.

[0097] The second adjustment module 950 may be used to adjust the reference crystal pulling parameters according to the simulation defects until the simulation defects satisfy the preset conditions, and to set the adjusted reference crystal pulling parameters as the target crystal pulling parameters.

[0098] The crystal manufacturing module 960 may be for manufacturing a defect-free silicon single crystal using the target crystal pulling parameters, which include hot zone parameters and crystal pulling process parameters.

[0099] In some examples, the first determinative module 920 may be used to determine the simulation scene according to the boundary, to perform a three-dimensional simulation of the crystal pulling process by adding a simulation magnetic field to the simulation scene, and to determine the target solid-liquid interface value based on the hot zone parameters in the three-dimensional simulation process, the physical properties parameters of the single-crystal silicon, the turbulence model of the silicon molten material, and the flow boundary layer.

[0100] In some cases, the threshold range is within 10%.

[0101] In some examples, the first adjustment module 930 may be used to determine the parameter distribution in the initial state of crystal pulling, determine the defect distribution in the initial state of crystal pulling based on the parameter distribution, correct the defect distribution according to a correction coefficient, determine the defect clusters in the initial state of crystal pulling based on the corrected defect distribution, and further determine the simulation defects in the crystal pulling process according to the defect clusters in the initial state of crystal pulling and the reference crystal pulling parameters. Among these, the parameter distribution includes the temperature distribution, velocity distribution, and stress distribution within the crystal pulling furnace in the initial state of crystal pulling.

[0102] In some examples, the first adjustment module 930 may be further used to determine a correction coefficient based on historical data and to correct at least one of the interstitial atom point defect concentration and vacancy point defect concentration based on the correction coefficient.

[0103] In some cases, when correcting the point defect concentration of the interstitial atoms, the correction coefficient is between 1.0 and 1.3.

[0104] In some examples, the preset crystal pulling parameters include the material viscosity and thermal conductivity of the molten material, and the first adjustment module 930 may be further used to adjust the material viscosity and / or thermal conductivity until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold range.

[0105] In some examples, the second deterministic module 940 may be used further to adjust the hot zone parameters and / or crystal pulling process parameters until the simulation defects satisfy the preset conditions.

[0106] In some examples, iteratively optimizing the reference crystal pulling parameters in response to the aforementioned simulation defects until the simulation defects satisfy preset conditions includes setting the optimized reference crystal pulling parameters as target crystal pulling parameters when the simulation defects satisfy COP and P-band (V-Cluster > 25 nm), Pv (V-Cluster = 12 to 25 nm), Pi (V-Cluster < 12 nm and I-Cluster < 0.5 nm), and LDP (I-Cluster < 0.5 nm).

[0107] Referring to Figure 10, which shows a structural block diagram of an electronic device according to one exemplary embodiment of the present disclosure. In some examples, the electronic device may be at least one of the following devices: a smartphone, a smartwatch, a desktop computer, a laptop computer, a virtual reality terminal, an augmented reality terminal, a wireless terminal, and a laptop portable computer. The electronic device has communication capabilities and can access a wired or wireless network. The electronic device generally refers to one of several terminals, but as will be understood by those skilled in the art, the number of such terminals may be greater or less. Also, as will be understood, the electronic device is responsible for calculation and processing tasks relating to the technical embodiments of the present disclosure, but is not limited to this in the embodiments of the present disclosure.

[0108] The above-described embodiment of the device is illustrative only, and it should be understood that the device of this disclosure can be implemented in other ways. For example, the division of units / modules in the above embodiment is merely a division by logical function, and other division methods are possible in actual implementation. For example, multiple units, modules, or components may be combined or integrated into another system, or some features may be ignored or not implemented at all.

[0109] Furthermore, unless otherwise specified, each functional unit / module in each embodiment of this disclosure may be integrated into a single unit / module, each unit / module may exist physically separately, or two or more units / modules may be integrated with one another. The integrated unit / module may be implemented using hardware or using software program modules.

[0110] When an integrated unit / module is implemented in hardware form, the hardware may be digital circuits, analog circuits, etc. Physical implementation of the hardware structure includes, but is not limited to, transistors, memristors, etc. Unless otherwise specified, the processor may be any suitable hardware processor, such as a Central Processing Unit (CPU), Graphics Processing Unit (GPU), Field-Programmable Gate Array (FPGA), Digital Signal Processor (DSP), and Application Specific Integrated Circuit (ASIC). Unless otherwise specified, the memory unit may be any suitable magnetic or magneto-optical memory medium, such as resistive random access memory (RRAM), dynamic random access memory (DRAM), static random access memory (SRAM), enhanced dynamic random access memory (EDRAM), high-bandwidth memory (HBM), or hybrid memory cube (HMC).

[0111] The integrated unit / module may be implemented in the form of a software program module and, if sold or used as an independent product, may be stored on a computer-readable storage medium. Based on this understanding, essential parts of the technical aspects of this disclosure, or parts that contribute to the prior art, or all or part of such technical aspects, can be embodied in the form of a software product. Such computer software product is stored on a storage medium and includes several instructions for causing a computer device (which may be a personal computer, server, or network device, etc.) to perform all or part of the steps in the methods of each embodiment of this disclosure. The aforementioned storage mediums include a variety of media capable of storing program code, such as USB flash drives, read-only memory (ROM), random access memory (RAM), portable hard disks, magnetic disks, or optical disks.

[0112] For example, as shown in Figure 10, the electronic device 1000 may include at least one processor 1010, memory 1020, and communication interface 1030.

[0113] Memory 1020 is for storing programs. Specifically, a program may include program code, which may include computer operation instructions.

[0114] Memory 1020 may include high-speed RAM memory and may further include non-volatile memory, such as at least one magnetic disk memory.

[0115] The processor 1010 is for executing computer execution instructions stored in the memory 1020 so that the crystal pulling method for manufacturing a large-diameter silicon single crystal as described in the above-described method embodiment is realized. The processor 1010 may be a single CPU, or an ASIC, or one or more integrated circuits configured to carry out embodiments of the present disclosure.

[0116] The electronic device 1000 may further include a communication interface 1030, which would enable communication interaction with external devices via the communication interface 1030. In a specific implementation, if the communication interface 1030, memory 1020, and processor 1010 are implemented independently, the communication interface 1030, memory 1020, and processor 1010 are connected to each other via a bus to perform communication between them. The bus may be an Industry Standard Architecture (ISA) bus, a Peripheral Component (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus, etc. The bus may be divided into an address bus, a data bus, a control bus, etc., but this does not mean that there is only one bus or only one type of bus.

[0117] In a selective implementation, if the communication interface 1030, memory 1020, and processor 1010 are integrated and implemented on a single chip, the communication interface 1030, memory 1020, and processor 1010 can communicate via an internal interface.

[0118] This disclosure further provides a computer-readable storage medium, which may include various media capable of storing program code, such as USB flash drives, portable hard disks, read-only memory, random access memory, magnetic disks, or optical disks. Specifically, the computer-readable storage medium stores program instructions, which are used in the crystal pulling method for manufacturing large-diameter silicon single crystals in the above embodiment.

[0119] The embodiments of this disclosure further provide computer program products, which include computer instructions, which are stored in a computer-readable storage medium, and the crystal pulling method for manufacturing large-diameter silicon single crystals according to each embodiment is implemented by the electronic device when the processor of the electronic device reads the computer instructions from the computer-readable storage medium and executes the computer instructions.

[0120] As will be apparent to those skilled in the art, in one or more of the above examples, the functions described in the embodiments of this disclosure can be implemented by hardware, software, firmware, or any combination thereof. When implemented by software, these functions may be stored in a computer-readable medium or transmitted as one or more instructions or codes on a computer-readable medium. The computer-readable medium includes computer storage media and communication media. Of these, the communication medium includes any medium that facilitates the transmission of computer programs from one place to another. The storage medium may be any available medium accessible by a general-purpose or special-purpose computer.

[0121] In the above embodiments, each embodiment has its own emphasis, and for aspects not detailed in one embodiment, the relevant descriptions in other embodiments can be referenced. The technical features in the above embodiments can be combined in any way, and for the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, these combinations of technical features should be considered to fall within the scope described herein, as long as they do not contradict each other.

[0122] Those skilled in the art will readily conceive of other embodiments of the Disclosure by examining this Specification and implementing the present invention. This Disclosure is intended to cover any variations, uses, or adaptive changes of the Disclosure, which may include common or customary technical means in the Art not described herein, in accordance with the general principles of this Disclosure.

[0123] It should be understood that this disclosure is not limited to the structure already described above and shown in the drawings, and various modifications and changes are possible without departing from its scope. The scope of this disclosure is defined solely by the attached claims.

Claims

1. A crystal pulling method for producing large-diameter silicon single crystals, To perform a global two-dimensional simulation of the crystal pulling process and obtain the global temperature distribution, velocity field distribution, and initial solid-liquid interface values ​​during the crystal pulling process under a preset crystal pulling apparatus model and preset crystal pulling parameters, The boundary conditions are determined according to the global temperature distribution and the velocity field distribution, and based on the boundary conditions, a local three-dimensional simulation is performed on the crystal pulling process to determine the target solid-liquid interface value. In a global two-dimensional simulation, the preset crystal pulling parameter is adjusted until the initial solid-liquid interface value and the target solid-liquid interface value become equal within a threshold range, and the adjusted preset crystal pulling parameter is used as the reference crystal pulling parameter. The simulation calculation of simulation defects in the crystal pulling process is performed according to the aforementioned reference crystal pulling parameters, Depending on the simulation defect, the reference crystal pulling parameter is iteratively optimized until the simulation defect satisfies the preset conditions, and the optimized reference crystal pulling parameter is set as the target crystal pulling parameter. A crystal pulling method comprising producing a defect-free silicon single crystal using the target crystal pulling parameters, which include hot zone parameters and crystal pulling process parameters.

2. Based on the boundary conditions described above, a local three-dimensional simulation is performed on the crystal pulling process to determine the target solid-liquid interface value. The simulation scene is determined according to the aforementioned boundary, and a simulation magnetic field is added to the simulation scene to perform a three-dimensional simulation of the crystal pulling process. The method according to claim 1, comprising determining the target solid-liquid interface value based on the hot zone parameters in the three-dimensional simulation process, the physical property parameters of single-crystal silicon, the turbulence model of the silicon molten liquid, and the flow boundary layer.

3. The method according to claim 1, wherein the threshold range included in the step of adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value become equal within the threshold range is 10% or less.

4. The step of simulating and calculating simulation defects in the crystal pulling process according to the above-mentioned reference preset crystal pulling parameters is: To determine the distribution of crystal pulling parameters in the initial state of crystal pulling, Based on the aforementioned crystal pulling parameter distribution, the defect distribution in the initial state of crystal pulling is simulated, The defect distribution is corrected according to the correction coefficient, and the defect clusters in the initial state of crystal pulling are determined based on the corrected defect distribution. The method according to claim 1, comprising determining the simulation defects in the crystal pulling process according to the defect clusters in the initial state of crystal pulling and the reference crystal pulling parameters.

5. The aforementioned defect distribution includes the concentration of interstitial atom point defects and vacancy point defects. Correcting the defect distribution according to the correction coefficient described above means The method according to claim 4, comprising determining a correction coefficient according to historical data, and correcting at least one of the interstitial atom point defect concentration and vacancy point defect concentration based on the correction coefficient.

6. The method according to claim 5, wherein, when correcting the point defect concentration of the interstitial atoms, the correction coefficient is 1.0 or more and 1.3 or less.

7. The preset crystal pulling parameters include the viscosity value and thermal conductivity of the molten material. Adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value become equal within the threshold range is: The method according to claim 1, comprising adjusting the material viscosity and / or thermal conductivity until the initial solid-liquid interface value and the target solid-liquid interface value become equal within a threshold range.

8. The method according to claim 1, wherein, in response to the simulation defects described above, iteratively optimizing the reference crystal pulling parameters until the simulation defects satisfy preset conditions, the optimized reference crystal pulling parameters are set as target crystal pulling parameters when the simulation defects satisfy COP and P-band (V-Cluster > 25 nm), Pv (V-Cluster = 12 to 25 nm), Pi (V-Cluster < 12 nm and I-Cluster < 0.5 nm), and LDP (I-Cluster < 0.5 nm).

9. A crystal pulling system for manufacturing large-diameter silicon single crystals, A parameter acquisition module for performing a global two-dimensional simulation of the crystal pulling process and obtaining the global temperature distribution, velocity field distribution, and initial solid-liquid interface value during the crystal pulling process under a preset crystal pulling apparatus model and preset crystal pulling parameters, and A first determination module for determining boundary conditions according to the global temperature distribution and the velocity field distribution, and for determining the target solid-liquid interface value by performing a local three-dimensional simulation of the crystal pulling process based on the boundary conditions, In a global two-dimensional simulation, the preset crystal pulling parameter is adjusted until the initial solid-liquid interface value and the target solid-liquid interface value become equal within a threshold range, and the adjusted preset crystal pulling parameter is used as the reference crystal pulling parameter by a first adjustment module. A second deterministic module for simulating and calculating simulation defects in the crystal pulling process according to the aforementioned reference crystal pulling parameters, A second adjustment module that iteratively optimizes the reference crystal pulling parameter in response to the simulation defect until the simulation defect satisfies the preset conditions, and sets the optimized reference crystal pulling parameter as the target crystal pulling parameter, A crystal pulling system comprising a crystal manufacturing module for producing a defect-free silicon single crystal using target crystal pulling parameters, which include hot zone parameters and crystal pulling process parameters.

10. It is a silicon single crystal, The silicon single crystal is manufactured based on the crystal pulling method for manufacturing a large-diameter silicon single crystal described in any one of claims 1 to 8. A silicon single crystal obtained from the aforementioned silicon single crystal, wherein the number of defects in any wafer with a vacancy dimension of 19 nm is 25 or less.

11. Electronic device including a processor and memory, wherein the processor is for executing instructions stored in the memory so as to realize a crystal pulling method for producing a large-diameter silicon single crystal as described in any one of claims 1 to 8.

12. A computer storage medium storing at least one instruction, wherein the at least one instruction is to be executed by a processor so as to realize a crystal pulling method for manufacturing a large-diameter silicon single crystal as described in any one of claims 1 to 8.

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