Semiconductor structure and method for forming the same

Abstract

The present invention relates to a semiconductor structure and a method for forming the same. This method provides a substrate (100,200) and a diffraction grating material layer (201) located on the surface of the substrate (100,200), provides a master model for nanoimprint lithography, and uses the master model for nanoimprint lithography as a mold to press onto the grating material layer (201) using a nanoimprint lithography process to form a diffraction grating structure including a plurality of diffraction grating teeth (101,202) periodically distributed on the surface of the substrate (100,200), wherein the diffraction grating teeth (101,202) have a triangular cross-sectional shape along the direction perpendicular to the surface of the substrate (100,200) and are also... The semiconductor structure includes a blaze surface (S1) and a back blaze surface (S2), wherein the connection point between the blaze surface (S1) and the back blaze surface (S2) constitutes the pointed angle of the apex of a triangle, and by setting an angle (β1) range between the normal (L1) and the horizontal line (L2) of the semiconductor structure including the substrate (100,200) and diffraction grating teeth (101,202), a film layer is selectively formed on one or both sides of the blaze surface (S1) and the back blaze surface (S2), wherein the film layer formed on the surface of the blaze surface (S1) is designated as the first film layer (203,503), and the film layer formed on the surface of the back blaze surface (S2) is designated as the second film layer (204,404,504). This method for forming a semiconductor structure offers a high degree of operational flexibility and simplifies the manufacturing process.

Description

Cross-reference

[0001] This application claims priority based on a Chinese patent application with an application number of 202311389714.1 and an invention title of "Semiconductor Structure and Method of Forming the Same", which was filed with the China National Intellectual Property Administration on October 24, 2023, and the entire content thereof is incorporated herein by reference.

Technical Field

[0002] The present invention relates to the technical field of semiconductors, and particularly to semiconductor structures and methods of forming the same.

Background Art

[0003] A blazed grating, also called a blazed lattice or an echelle grating, is typically characterized by an asymmetric sawtooth groove shape. Compared with other groove-shaped structures, the groove-shaped structure of a blazed grating exhibits a diffraction characteristic that concentrates most of the diffracted light at a certain non-zero diffraction order, thereby enabling adjustment of the energy distribution of the diffracted light. With the rapid growth of the semiconductor industry in China, silicon micromachining technology has developed rapidly, the manufacturing process of diffraction gratings has continuously evolved, and the fabrication technology has been significantly improved. Therefore, a diffraction grating having such an asymmetric sawtooth groove shape is becoming the standard for commercial diffraction gratings.

[0004] Although blazed gratings require very high precision, due to their stable performance and high resolution, they are widely used in various optical fields such as spectral analysis, laser interference, optical communication, and optical imaging. In addition, blazed gratings are important optical devices whose principles and applications span multiple fields. With the continuous progress of science and technology, it is expected that the market scale of blazed gratings will continue to expand in the future.

[0005] However, on the other hand, the manufacturing of blazed gratings is difficult, and there is still room for improvement in their performance.

Summary of the Invention

[0006] The technical problem that this invention aims to solve is to provide a semiconductor structure and a method for forming the same in order to improve the performance of a blazed diffraction grating.

[0007] To solve the above technical problems, the present invention provides a technical solution that includes providing a substrate and a diffraction grating material layer located on the surface of the substrate, providing a master model for nanoimprint lithography, and forming a diffraction grating structure on the surface of the substrate by using the master model for nanoimprint lithography as a mold and imprinting it onto the diffraction grating material layer using a nanoimprint lithography process, wherein the diffraction grating teeth have a triangular cross-sectional shape along the direction perpendicular to the surface of the substrate and include a blaze surface and a back blaze surface, and the connection position between the blaze surface and the back blaze surface constitutes the pointed angle of the apex of the triangle, and by setting the range of the angle between the normal and the horizontal of the semiconductor structure including the substrate and diffraction grating teeth, a film layer is selectively formed on one or both sides of the blaze surface and the back blaze surface, wherein the film layer formed on the surface of the blaze surface is designated as the first film layer and the film layer formed on the surface of the back blaze surface is designated as the second film layer.

[0008] Optionally, selectively forming a film layer on one or both sides of the blaze surface and back blaze surface includes providing a film coating apparatus, the film coating apparatus comprising: a vacuum chamber including a first side wall and a second side wall facing each other; a first ion source fixed to the lower part of the first side wall; a rotatable target material holder fixed to the lower part of the second side wall, including at least two target material mounting positions, wherein by rotating the rotatable target material holder, each target material mounted at the target material mounting position faces the first ion source; a mounting apparatus provided on the upper part of the first side wall, including a rotating shaft fixed to the upper part of the first side wall and a mounting stage connected to the rotating shaft, wherein the rotating shaft can drive the mounting stage to revolve clockwise or counterclockwise within the vacuum chamber, and the mounting stage is capable of rotatable about the center of the mounting stage; and a second ion source fixed to the upper part of the second side wall.

[0009] As an option, selectively forming a film layer on one or both sides of the blaze surface and the back blaze surface includes arranging a semiconductor structure including a substrate and diffraction grating teeth on a mounting stage; driving the rotation axis to revolve the mounting stage in a vacuum chamber and adjusting the rotation axis so that the angle between the normal and horizontal lines of the semiconductor structure, which are vertical lines perpendicular to the surface of the substrate, is within a predetermined range; and generating a first ion beam using a first ion source and causing it to collide with a target material facing the first ion source to form a film layer on one or both sides of the blaze surface and the back blaze surface.

[0010] Optionally, the angle between the normal and horizontal lines of the semiconductor structure is less than 60° within a predetermined range.

[0011] As an option, forming a film layer on only one side of the blaze surface and the back blaze surface includes adjusting the rotation axis such that the angle between the normal and the horizontal line of the semiconductor structure is within a predetermined range, and the blaze surface faces the first target material, or the back blaze surface faces the first target material, and generating a first ion beam using a first ion source and causing it to collide with the first target material facing the first ion source, thereby depositing and forming a first film layer on the blaze surface facing the first target material, or depositing and forming a second film layer on the back blaze surface facing the first target material.

[0012] As an option, forming the first and second film layers of the same material on both the blaze surface and the back blaze surface includes, after depositing and forming the first film layer on the blaze surface facing the first target material, or after depositing and forming the second film layer on the back blaze surface facing the first target material, rotating the aforementioned setting stage at a predetermined angle so that the blaze surface or back blaze surface on which no film layer has been formed faces the first target material, thereby depositing and forming the second film layer on the back blaze surface on which no film layer has been formed, or depositing and forming the first film layer on the blaze surface on which no film layer has been formed.

[0013] As an option, the method further includes placing a shielding plate above the blaze surface or back blaze surface on which the film layer is formed before rotating the aforementioned mounting stage at a predetermined angle.

[0014] As an option, the predetermined angle for rotating the aforementioned stage is in the range of 150 to 210 degrees.

[0015] As an option, forming film layers, a first film layer and a second film layer, of different materials on both the blaze surface and the back blaze surface includes: placing a shielding plate above the blaze surface or back blaze surface on which the film layers are formed after depositing and forming the first film layer on the blaze surface facing the first target material, or after depositing and forming the second film layer on the back blaze surface facing the first target material; rotating the target material holder so that the second target material, which is made of a different material from the first target material, faces the first ion source; rotating the aforementioned placement stage by 180 degrees so that the blaze surface or back blaze surface on which no film layer is formed faces the second target material; and depositing and forming the second film layer on the back blaze surface on which no film layer is formed, or depositing and forming the first film layer on the blaze surface on which no film layer is formed.

[0016] Optionally, the angle between the normal and horizontal lines of the semiconductor structure is within a predetermined range of 0 to 180 degrees.

[0017] As an option, forming the first and second film layers of the same material on both the blaze surface and the back blaze surface includes continuously rotating the aforementioned setting stage so that the angle between the normal and horizontal lines of the semiconductor structure is within a predetermined range, generating a first ion beam using a first ion source, and causing it to collide with a first target material facing the first ion source to deposit and form the first film layer on the blaze surface, while simultaneously depositing and forming the second film layer on the back blaze surface.

[0018] Optionally, the method further includes using a first ion source to collide with a first target material moving toward the first ion source, while simultaneously using a second ion source to generate a second ion beam to assist in the formation of the blaze surface with the first film layer, and using a second ion source to assist in the formation of the back blaze surface with the second film layer.

[0019] As an option, making the first and second film layers different in thickness includes adjusting the angle between the normal and horizontal lines of the semiconductor structure so that the deposition rates of the film layers on the blaze surface and the back blaze surface are different, thereby forming the first and second film layers with different thicknesses.

[0020] Optionally, the first ion beam generated from the first ion source includes either a collisional ion beam or a reactive ion beam. The collisional ion beam includes an ion beam formed from one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe. The reactive ion beam is an ion beam formed from a reactive gas, which is one or more of the following: oxygen, nitrous oxide, and nitrogen, and one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe.

[0021] Optionally, a first angle of the triangle is formed between the blaze surface and the substrate surface, and a second angle of the triangle is formed between the back blaze surface and the substrate surface, with the first angle being smaller than the second angle.

[0022] Optionally, the first film layer includes a reflection-enhancing thin film or a transmission-enhancing thin film, the second film layer includes a reflection-enhancing thin film or a transmission-enhancing thin film, the material of the transmission-enhancing film includes titanium oxide, titanium nitride, tantalum oxide, or aluminum oxide, and the material of the reflection-enhancing film includes aluminum, silver, gold, or copper.

[0023] Optionally, the material for the diffraction grating structure may include a mixture of organic materials and inorganic particles, and the inorganic particles may include titanium oxide.

[0024] Optionally, the process temperature range is set to less than 80°C in order to form a film layer on one or both sides of the blaze surface and the back blaze surface.

[0025] Moreover, according to the technical solution of the present invention, there is provided a semiconductor structure including a substrate and a diffraction grating structure located on the surface of the substrate and including a plurality of diffraction grating teeth periodically distributed on the surface of the substrate. The cross-sectional shape of the diffraction grating teeth along the direction perpendicular to the surface of the substrate is triangular and includes a blaze surface and a back-blaze surface, and the connection position between the blaze surface and the back-blaze surface constitutes the sharp corner at the top of the triangle. The semiconductor structure further includes a film layer located on one or both sides of the blaze surface and the back-blaze surface. The film layer located on the surface of the blaze surface is the first film layer, and the film layer located on the surface of the back-blaze surface is the second film layer.

[0026] Optionally, the first film layer is located on the blaze surface, the second film layer is located on the back-blaze surface, and the materials of the first film layer and the second film layer are the same.

[0027] Optionally, the first film layer and the second film layer have different thicknesses.

[0028] Optionally, the first film layer is located on the blaze surface, the second film layer is located on the back-blaze surface, and the materials of the first film layer and the second film layer are different.

[0029] Optionally, a first angle of the triangle is formed between the blaze surface and the surface of the substrate, and a second angle of the triangle is formed between the back-blaze surface and the surface of the substrate, and the first angle is smaller than the second angle.

[0030] Optionally, the first film layer includes an anti-reflection enhanced thin film or a transmission enhanced thin film, the second film layer includes an anti-reflection enhanced thin film or a transmission enhanced thin film, the material of the anti-reflection enhanced film includes titanium oxide, titanium nitride, tantalum oxide or aluminum oxide, and the material of the reflection enhanced film includes aluminum, silver, gold or copper.

[0031] Optionally, the material of the diffraction grating structure includes a mixture of an organic material and inorganic particles, and the inorganic particles include titanium oxide. [Effects of the Invention]

[0032] Compared to conventional technologies, the technological solution of the present invention offers the following beneficial effects.

[0033] In the technical solution of the present invention, by setting the range of the angle between the normal and the horizontal line of the semiconductor structure including the substrate and diffraction grating teeth, and selectively forming a film layer on one or both sides of the blaze surface and the back blaze surface, it is possible to freely control whether a film layer is deposited only on the blaze surface, only on the back blaze surface, or on both the blaze surface and the back blaze surface. Furthermore, it is possible to control the thickness ratio of the thin films on the blaze surface and the back blaze surface, and whether the same material or different materials are deposited on the blaze surface and the back blaze surface. Therefore, the degree of freedom of operation when forming film layers on the blaze surface and the back blaze surface is improved, and the manufacturing process can be simplified.

[0034] Furthermore, since the connection position between the blaze surface and the back blaze surface constitutes the pointed angle at the apex of the triangle, by setting the angle between the normal and horizontal lines of the semiconductor structure within a predetermined range, the angle between the normal and horizontal lines of the semiconductor structure falls within the predetermined range, and the sputtered particles are prevented from accumulating on the other side surface of the first target material by the tips of the diffraction grating teeth, thus enabling film coating on one side of the blaze surface or back blaze surface.

[0035] Furthermore, by rotating the aforementioned mounting stage and setting the angle between the normal and horizontal lines of the semiconductor structure, sequential or simultaneous film coating of the blaze surface and the back blaze surface can be achieved, thereby improving the degree of freedom of operation during film layer formation on the blaze surface and the back blaze surface, and simplifying the manufacturing process.

[0036] Furthermore, the process for forming a film layer on one or both sides of the blaze surface and the back blaze surface is performed within a temperature range of less than 80°C. Because the process temperature is low, the performance of the diffraction grating tooth material is stable within this temperature range, and deformation and distortion that affect the performance of the diffraction grating structure are less likely to occur. [Brief explanation of the drawing]

[0037] [Figure 1] This is a schematic diagram showing the formation process of a semiconductor structure in one embodiment. [Figure 2] This is a schematic diagram showing the formation process of a semiconductor structure in one embodiment. [Figure 3] This is a schematic diagram showing the formation process of a semiconductor structure in one embodiment of the present invention. [Figure 4] This is a schematic diagram showing the formation process of a semiconductor structure in one embodiment of the present invention. [Figure 5] This is a schematic diagram showing the formation process of a semiconductor structure in one embodiment of the present invention. [Figure 6] This is a schematic diagram showing the formation process of a semiconductor structure in one embodiment of the present invention. [Figure 7] This is a schematic diagram showing the formation process of a semiconductor structure in one embodiment of the present invention. [Figure 8] This is a schematic diagram showing the formation process of a semiconductor structure in one embodiment of the present invention. [Figure 9] This is a schematic diagram showing the formation process of a semiconductor structure in one embodiment of the present invention. [Figure 10] This is a schematic diagram showing the formation process of a semiconductor structure in one embodiment of the present invention. [Figure 11] This is a schematic diagram showing the formation process of a semiconductor structure in one embodiment of the present invention. [Figure 12] This is a schematic diagram showing the formation process of a semiconductor structure in another embodiment of the present invention. [Figure 13] This is a schematic diagram showing the formation process of a semiconductor structure in another embodiment of the present invention. [Modes for carrying out the invention]

[0038] As explained in the background technology section, the manufacturing of blazed diffraction gratings is difficult, and there is still room for improvement in their performance. The following analysis and explanation will refer to specific embodiments.

[0039] Figures 1 and 2 are schematic diagrams showing the formation process of a semiconductor structure in one embodiment.

[0040] Referring to Figure 1, a substrate 100 and a diffraction grating material layer (not shown) located on the surface of the substrate 100 are provided. A master model for nanoimprint lithography (not shown) is also provided. Using the master model for nanoimprint lithography as a mold, the diffraction grating material layer is imprinted using a nanoimprint lithography process to form a diffraction grating structure on the surface of the substrate 100. Here, the diffraction grating structure includes a plurality of periodically distributed diffraction grating teeth 101, the cross-sectional shape of the diffraction grating teeth 101 along a direction perpendicular to the surface of the substrate 100 is triangular, the diffraction grating teeth 101 include a blaze surface S1 and a back blaze surface S2, and the connection position between the blaze surface S1 and the back blaze surface S2 constitutes the pointed angle of the apex of the triangle.

[0041] The diffraction grating material layer is made of a composite material, which is typically a mixture of an organic material and inorganic particles with a high refractive index (such as titanium oxide or yttrium oxide particles). The material of the diffraction grating teeth 101 formed by imprinting is also a mixture of an organic material and inorganic particles with high reflectivity. The material of the diffraction grating teeth 101 cannot withstand high temperatures and may deform at temperatures exceeding 80°C, causing a change in the shape of the diffraction grating teeth 101 (i.e., the triangular cross-sectional shape becomes distorted or collapsed). As a result, the optical performance of the diffraction grating structure changes significantly, and the relevant requirements are no longer met.

[0042] Referring to Figure 2, a thin film 102 is formed on the surface of the blaze surface S1 and the back blaze surface S2.

[0043] The thin film 102 is generally a reflection-enhancing thin film or a transmission-enhancing thin film, and is used to protect the surface of the diffraction grating teeth 101 while increasing the reflectance or transmittance of the diffraction grating teeth 101.

[0044] On the other hand, the processes for forming reflection-enhancing or transmission-enhancing thin films are generally vapor deposition, sputtering, or chemical vapor deposition. In these processes, the reaction temperature usually exceeds 80°C, which may cause morphological defects or performance defects in the diffraction grating teeth 101. On the other hand, when forming a thin film on the surface of the diffraction grating teeth 101 using conventional vapor deposition, sputtering, or chemical vapor deposition methods, the film layer may be formed simultaneously on both the blaze surface S1 and the back blaze surface S2. Therefore, it is not possible to deposit a film on only one side of the blaze surface S1 or the back blaze surface S2 using conventional vapor deposition, sputtering, or chemical vapor deposition methods, nor is it possible to form thin films of different materials on the surfaces of the blaze surface S1 and the back blaze surface S2. In order to deposit a film on only one side of the blaze surface S1 or the back blaze surface S2, or to form thin films of different materials on the blaze surface S1 and the back blaze surface S2, a procedure of depositing and then removing is required, which increases the process flow.

[0045] To solve the above problems, the present invention provides a technical solution for forming a semiconductor and a semiconductor structure. By setting the range of the angle between the normal and the horizontal line of the semiconductor structure including the substrate and diffraction grating teeth, and selectively forming a film layer on one or both of the blaze surface and the back blaze surface, it is possible to freely control whether to deposit a film layer only on the blaze surface or only on the back blaze surface, or to deposit a film layer on both the blaze surface and the back blaze surface. Furthermore, it is possible to control the thickness ratio of the thin films on the blaze surface and the back blaze surface, and whether to deposit the same material or different materials on the blaze surface and the back blaze surface. Therefore, the degree of freedom of operation when forming film layers on the blaze surface and the back blaze surface is improved, and the manufacturing process can be simplified.

[0046] To further clarify the above-mentioned objectives, features, and beneficial effects of the present invention, specific embodiments of the present invention will be described in detail below with reference to the drawings.

[0047] Figures 3 to 9 are schematic diagrams showing the formation process of a semiconductor structure in one embodiment of the present invention.

[0048] Referring to Figure 3, a substrate 200 and a diffraction grating material layer 201 located on the surface of the substrate 200 are provided.

[0049] The material of the substrate 200 includes a semiconductor material or silicon oxide. Examples of the semiconductor material include silicon, silicon carbide, silicon germanium, a multi-element semiconductor material consisting of group III-V elements, silicon-on-insulator (SOI), or germanium-on-insulator (GOI). Examples of the multi-element semiconductor material consisting of group III-V elements include InP, GaAs, GaP, InAs, InSb, InGaAs, or InGaAsP.

[0050] In this embodiment, the material of the substrate 200 includes silicon.

[0051] In this embodiment, the material of the diffraction grating material layer 201 includes a mixture of organic particles and inorganic particles. The inorganic particles are inorganic materials with a high refractive index, such as titanium oxide and yttrium oxide. Because the inorganic particles have a high refractive index, the blaze surface composed of the mixture of organic material and inorganic particles has a high reflectivity and is used for the subsequent formation of diffraction grating teeth.

[0052] In this embodiment, the inorganic particle material includes titanium oxide. The organic material includes a resin.

[0053] In another embodiment, the material of the diffraction grating layer includes one or more combinations of silicon oxide, silicon, silicon carbide, and quartz.

[0054] Referring to Figures 4 and 5, Figure 5 is an enlarged schematic view of a single diffraction grating tooth 202 in Figure 4. The diffraction grating material layer 201 is processed to form a diffraction grating structure on the surface of the substrate 200. The diffraction grating structure includes a plurality of periodically distributed diffraction grating teeth 202. The diffraction grating teeth 202 have a triangular cross-sectional shape along the direction perpendicular to the surface of the substrate 200. The diffraction grating teeth 202 include a blaze surface S1 and a back blaze surface S2, and the connection position between the blaze surface S1 and the back blaze surface S2 constitutes the pointed angle of the apex of the triangle.

[0055] In this embodiment, the material of the diffraction grating material layer 201 includes a mixture of organic material and inorganic particles. The processing method for the diffraction grating material layer 201 includes providing a master model (not shown) for nanoimprint lithography, and using the nanoimprint master mold as a mold, imprinting the diffraction grating material layer 201 in a nanoimprint lithography process to form a diffraction grating structure on the surface of the substrate 200 that includes a plurality of periodically distributed diffraction grating teeth 202.

[0056] In this embodiment, a first angle α1 of the triangle is formed between the blaze surface S1 and the surface of the substrate 200, a second angle α2 of the triangle is formed between the back blaze surface S2 and the surface of the substrate 200, and the first angle α1 is smaller than the second angle α2.

[0057] In this embodiment, the first angle α1 is in the range of 30 to 60 degrees, and the second angle α2 is in the range of 70 to 90 degrees.

[0058] In another embodiment, the material of the diffraction grating material layer includes one or more combinations of silicon oxide, silicon, silicon carbide, and quartz. Processes for processing the diffraction grating material layer to form diffraction grating teeth include ion etching, mechanical engraving, or laser etching.

[0059] Next, a film layer is selectively formed on one or both sides of the blaze surface S1 and the back blaze surface S2. Here, the film layer formed on the surface of the blaze surface S1 is referred to as the first film layer, and the film layer formed on the surface of the back blaze surface S2 is referred to as the second film layer.

[0060] Referring to Figure 6, a thin-film coating apparatus is provided. The thin-film coating apparatus comprises a vacuum chamber 300 including a first side wall and a second side wall facing each other; a first ion source 301 fixed to the lower part of the first side wall; a rotatable target material holder 302 fixed to the lower part of the second side wall including at least two target material mounting positions; a mounting device provided on the upper part of the first side wall including a rotating shaft fixed to the upper part of the first side wall and a mounting stage 305 connected to the rotating shaft; and a second ion source 303 fixed to the upper part of the second side wall. A semiconductor structure including a substrate 200 and diffraction grating teeth 202 is placed on the mounting stage 305. By rotating the rotatable target material holder 302, each target material mounted on the target material mounting positions is directed toward the first ion source 301. The mounting stage 305 is driven by the rotation shaft and is capable of revolving clockwise or counterclockwise within the vacuum chamber 300, and is capable of rotating on its own axis with its center as the center of the circle.

[0061] The vacuum chamber 300 provides a reaction environment with a certain degree of vacuum for forming a film layer on one or both sides of the blaze surface S1 and the back blaze surface S2.

[0062] The fact that the mounting stage 305 is driven by the rotation axis and can revolve clockwise or counterclockwise within the vacuum chamber 300 means that the mounting stage 305 can rotate 360 ​​degrees within the vacuum chamber 300 with the structure fixed to the upper part of the vacuum chamber 300 as its center and pivot point, and the position of the mounting stage 305 within the vacuum chamber 300 changes accordingly, and the orientation of the upper surface of the semiconductor structure fixed on the mounting stage 305 also changes accordingly. That is, the upper surface of the semiconductor structure fixed on the mounting stage 305 can be oriented upward, downward, or in any other arbitrary direction as it revolves, thereby achieving the objective of adjusting the angle range between the normal of the semiconductor structure and the horizontal plane.

[0063] The mounting stage 305 is capable of rotating around its center as the pivot point. This means that the mounting stage 305 can rotate 360 ​​degrees around its central structure as the pivot point, without changing its position in the vacuum cavity 300. Consequently, the orientation of the upper surface of the semiconductor structure fixed on the mounting stage 305 changes within the plane of the mounting stage 305. This makes it possible to adjust the orientation of the blaze surface and back blaze surface without changing the angle between the normal and horizontal lines of the semiconductor structure.

[0064] The rotatable target material holder 302 comprises at least two (two, three, or four) target material mounting positions. One target material is mounted at each target material mounting position. The materials of the target materials mounted at each target material mounting position may be the same or different, depending on the actual thin film coating requirements. By rotating the rotatable target material holder 302, the target material mounted at one target material mounting position faces the first ion source 301, thus facilitating the collision of the first ion beam b1 generated from the first ion source 301 with the target material facing the first ion source 301.

[0065] In this embodiment, a film layer is selectively formed on one side of the blaze surface S1 and the back blaze surface S2. Here, the film layer formed on the surface of the blaze surface S1 is referred to as the first film layer, and the film layer formed on the surface of the back blaze surface S2 is referred to as the second film layer.

[0066] Figure 7 is a schematic diagram based on Figure 6. Referring to Figure 7, the method for forming a film layer on one side of the blaze surface S1 and the back blaze surface S2 includes adjusting the rotation axis so that the aforementioned mounting stage 305 is driven by the rotation axis and revolves within the vacuum chamber 300, and so that the angle β1 between the normal L1 and the horizontal L2 of the semiconductor structure, which is a line perpendicular to the surface of the substrate 200, is within a predetermined range; and causing a first ion beam b1 generated from a first ion source 301 to collide with a first target material 304 directed toward the first ion source 301, thereby forming a film layer on one or both sides of the blaze surface S1 and the back blaze surface S2.

[0067] In this embodiment, the predetermined range of the angle β1 between the normal and the horizontal line of the semiconductor structure is less than 60°.

[0068] Furthermore, the second ion source 303 is not turned on during the period when a film layer is formed on one side of the blaze surface S1 and the back blaze surface S2.

[0069] When the first ion beam b1 generated from the first ion source 301 collides with the first target material 304 facing the first ion source 301, sputtered ions ejected from the first target material 304 by the impact of the first ion beam b1 fly towards the blaze surface S1 or back blaze surface S2 facing the first target material 304. Since the connection position of the blaze surface S1 and the back blaze surface S2 constitutes the pointed angle of the apex of the triangle, by setting the angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure so that the angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure is within a predetermined range, the tip of the diffraction grating teeth 202 blocks the sputtered ions from accumulating on the opposite surface of the first target material 304, and as a result, film coating is achieved on one side of the blaze surface S1 or back blaze surface S2.

[0070] In this embodiment, the process for forming a film layer on one side of the blaze surface S1 or the back blaze surface S2 includes a sputtering deposition process.

[0071] Referring to Figure 8 in conjunction with Figure 7, forming the first film layer 203 on the surface of the blaze surface S1 includes adjusting the rotation axis such that the blaze surface S1 faces the first target material 304 and the back blaze surface S2 moves away from the first target material 304 as the angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure falls within a predetermined range, and causing the first ion beam b1 generated from the first ion source 301 to collide with the first target material 304 facing the first ion source 301, thereby depositing the first film layer 203 on the blaze surface S1 of the first ion source 301 facing the first target material 304.

[0072] Referring to Figure 9 in conjunction with Figure 7, forming a second film layer 204 on the surface of the blaze surface S2 includes adjusting the rotation axis so that the blaze surface S2 faces the first target material 304 and the blaze surface S1 moves away from the first target material 304 as the angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure falls within a predetermined range, and causing the first ion beam b1 generated from the first ion source 301 to collide with the first target material 304 facing the first ion source 301, thereby depositing the second film layer 204 on the back blaze surface S2 of the first ion source 301 facing the first target material 304.

[0073] When placing the semiconductor structure, including the substrate 200 and diffraction grating teeth 202, on the mounting stage 305, the orientation of the semiconductor structure, including the substrate 200 and diffraction grating teeth 202, is set so that after the mounting stage 305 revolves within the vacuum chamber 300 along the rotation axis and the angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure falls within a predetermined range, the blaze surface S1 or back blaze surface S2 to be coated faces the first target material 304. Alternatively, after the mounting stage 305 is driven by the rotation axis and revolves within the vacuum chamber 300, the rotation of the mounting stage 305 is adjusted so that the blaze surface S1 or back blaze surface S2 to be coated faces the first target material 304.

[0074] In this embodiment, the first ion beam b1 generated from the first ion source 301 includes a collisional ion beam. The collisional ion beam is formed from one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe. The collisional ion beam is used to collide with the first target material 304 and knock sputtered particles away from the first target material 304.

[0075] In this embodiment, the first film layer 203 includes a reflection-enhancing film, and the second film layer 204 also includes a reflection-enhancing film. Examples of materials for the reflection-enhancing film include aluminum, silver, gold, or copper. The reflection-enhancing film is used to increase the reflectivity of the surface of the diffraction grating teeth 202. A sputtering deposition process is used to form the first film layer 203 and the second film layer 204.

[0076] In this embodiment, the temperature range for the process of forming the first film layer 203 and the second film layer 204 is less than 80°C. The process temperature is low. Within this temperature range, the material of the diffraction grating teeth exhibits stable performance, and deformation and distortion that adversely affect the performance of the diffraction grating structure are less likely to occur.

[0077] In another embodiment, the first film layer includes a permeability-enhancing film, and the second film layer includes a reflection-enhancing film. Examples of materials for the permeability-enhancing film include titanium oxide, titanium nitride, tantalum oxide, or aluminum oxide. The first ion beam generated from the first ion source includes a reactive ion beam. The reactive ion beam is an ion beam formed by a reactive gas, which is one or more combinations of oxygen, nitrous oxide, and nitrogen, and one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe. A sputtering deposition process is used to form the first and second film layers, in which the reactive gas reacts with target particles ejected after impact and is then deposited on the surface of the blaze or back blaze.

[0078] In this embodiment, the first film layer 203 has a thickness in the range of 0 to 300 nm, and the second film layer 204 has a thickness in the range of 0 to 300 nm.

[0079] In this embodiment, the material of the first target material 304 may be aluminum, copper, silver, titanium, tantalum, or gold.

[0080] The specific film coating process in this embodiment will be described below.

[0081] For example, when depositing a reflective enhancement film of gold material with a thickness of 0 to 300 nm on the blaze surface S1, the specific procedure is as follows: The angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure is adjusted to less than 60°, the aforementioned setting stage 305 is not rotated, and the blaze surface S1 is directed toward the first target material 304 of gold material. The first ion beam b1 generated by introducing argon gas into the first ion source 301 is made to collide with the gold target, knocking gold particles away from the gold target and forming a reflective enhancement film of gold material on the surface of the blaze surface S1.

[0082] For example, when depositing a reflective enhancement film with a thickness of 0 to 300 nm and made of aluminum on the back blaze surface S2, the specific procedure is as follows: The angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure is adjusted to less than 60°, the aforementioned setting stage 305 is not rotated, and the back blaze surface S2 is directed toward the first target material 304 made of aluminum. The first ion beam b1 generated by introducing argon gas into the first ion source 301 is made to collide with the aluminum target, knocking aluminum particles away from the aluminum target and forming a reflective enhancement film of aluminum on the surface of the back blaze surface S2.

[0083] Furthermore, according to embodiments of the present invention, a semiconductor structure is also provided. Referring again to Figures 8 and 9, this semiconductor structure is... Circuit board 200 and, A diffraction grating structure comprising a plurality of diffraction grating teeth 202 located on the surface of a substrate 200 and periodically distributed on the surface of the substrate 200, wherein the diffraction grating teeth 202 have a triangular cross-sectional shape along a direction perpendicular to the surface of the substrate 200 and include a blaze surface S1 and a back blaze surface S2, and the connection position between the blaze surface S1 and the back blaze surface S2 constitutes the pointed angle of the apex of the triangle, The device comprises a first film layer 203 located on the surface of the blaze surface S1, or a second film layer 204 located on the surface of the back blaze surface S2.

[0084] In this embodiment, the first angle α1 of the triangle is formed between the blaze surface S1 and the surface of the substrate 200, and the second angle α2 of the triangle is formed between the back blaze surface S2 and the surface of the substrate 200, with the first angle α1 being smaller than the second angle α2.

[0085] In this embodiment, the first film layer 203 includes a reflection-enhancing thin film or a transmission-enhancing thin film, and the second film layer 204 includes a reflection-enhancing thin film or a transmission-enhancing thin film. The material of the transmission-enhancing film includes titanium oxide, titanium nitride, tantalum oxide, or aluminum oxide, and the material of the reflection-enhancing film includes aluminum, silver, gold, or copper.

[0086] In this embodiment, the material for the diffraction grating structure is a mixture of an organic material and inorganic particles, and the inorganic particles are titanium oxide.

[0087] Figures 10 and 11 are schematic diagrams showing the semiconductor structure formation process in one embodiment of the present invention.

[0088] Referring to Figure 10, which is a schematic diagram based on Figure 7, and Figure 11, which is a schematic diagram based on Figure 8, a film layer is formed on both the blaze surface S1 and the back blaze surface S2.

[0089] In this embodiment, first, a first film layer 203 is formed on the surface of the blaze surface S1, and then a second film layer 404 is formed on the surface of the back blaze surface S2 using the same film coating process.

[0090] A method for forming film layers on both the blaze surface S1 and the back blaze surface S2 includes forming a first film layer 203 on the surface of the blaze surface S1, then rotating the aforementioned setting stage 305 at a predetermined angle β2 so that the back blaze surface S2, which does not have a film layer formed on it, faces the first target material 304, and forming a second film layer 404 on the back blaze surface S2, which does not have a film layer formed on it.

[0091] In this embodiment, the predetermined angle β2 when rotating the mounting stage 305 is in the range of 150 degrees to 210 degrees. Rotating the mounting stage 305 includes rotating it around its own center.

[0092] In this embodiment, before rotating the aforementioned mounting stage 305 at a predetermined angle β2, a shielding plate (not shown) is placed above the blaze surface S1 on which the first film layer 203 is formed.

[0093] In this embodiment, the angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure is less than 60°.

[0094] In this embodiment, the material of the second film layer 404 and the material of the first film layer 203 are the same. Since the first film layer 203 and the second film layer 404 are formed before and after each other in the same film coating process, the first ion source 301 remains on throughout to maintain the stability of the environment inside the vacuum chamber 300. When the mounting stage 305 is rotated, if it is not necessary to continue forming a film layer on the surface of the first film layer 203 formed on the blaze surface S1, a shielding plate (not shown) can be placed above the blaze surface S1 on which the first film layer 203 is formed so that the film layer does not accumulate on the blaze surface S1 while the mounting stage 305 is rotating. Otherwise, it is not necessary to place a shielding plate above the blaze surface S1.

[0095] Since the first film layer 203 and the second film layer 404 are formed before and after the same film coating process, the thicknesses of the first film layer 203 and the second film layer 404 can be adjusted according to the film coating time.

[0096] In this embodiment, the temperature range for the process of forming the first film layer 203 and the second film layer 404 is less than 80°C. The process temperature is low. Within this temperature range, the material of the diffraction grating teeth exhibits stable performance, and deformation and distortion that adversely affect the performance of the diffraction grating structure are less likely to occur.

[0097] In another embodiment, the material of the second film layer and the material of the first film layer are the same. In the same film coating process, first, a second film layer is formed on the surface of the back blaze surface, and then the aforementioned placement stage is rotated at a predetermined angle so that the blaze surface on which no film layer has been formed faces the first target material, and the first film layer is deposited and formed on the blaze surface on which no film layer has been formed.

[0098] In another embodiment, the material of the first film layer and the material of the second film layer are different. A method for forming film layers on both the blaze surface and the back blaze surface includes: depositing and forming a first film layer on the blaze surface facing the first target material, or depositing and forming a second film layer on the back blaze surface facing the first target material, then placing a shielding plate above the blaze surface or back blaze surface on which the film layer is formed; rotating the target material holder so that a second target material made of a different material from the first target material faces the first ion source; rotating the setting stage described above by 180 degrees so that the blaze surface or back blaze surface on which the film layer is not formed faces the second target material; and depositing and forming a second film layer on the back blaze surface on which the film layer is not formed, or depositing and forming a first film layer on the blaze surface on which the film layer is not formed.

[0099] By placing a shielding plate above the blaze surface or back blaze surface on which the film layer is formed, the accumulation of the second target material on the surface of the formed first or second film layer is prevented during the rotation of the mounting stage described above. When the mounting stage is rotated 180 degrees, the blaze surface or back blaze surface on which the film layer has not been formed is ensured to face the second target material, thereby forming the film layer on the blaze surface or back blaze surface on which the film layer has not been formed.

[0100] Examples of the second target material include aluminum, copper, silver, titanium, tantalum, or gold.

[0101] The first ion beam generated from the first ion source includes either a collision ion beam or a reactive ion beam. The collision ion beam is formed from one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe, while the reactive ion beam is formed from a reactive gas, which is one or more of the gases selected from oxygen, nitrous oxide, and nitrogen, and one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe. The reactive gas reacts with the target particles ejected after the collision and deposits on the surface of the blaze or back blaze.

[0102] The first film layer 203 includes a reflection-enhancing thin film or a transmission-enhancing thin film, and the second film layer 204 includes a reflection-enhancing thin film or a transmission-enhancing thin film. The material of the transmission-enhancing film includes titanium oxide, titanium nitride, tantalum oxide, or aluminum oxide, and the material of the reflection-enhancing film includes aluminum, silver, gold, or copper.

[0103] Furthermore, according to embodiments of the present invention, a semiconductor structure is also provided. Referring again to Figure 11, this semiconductor structure is: Circuit board 200 and, A diffraction grating structure comprising a plurality of diffraction grating teeth 202 located on the surface of a substrate 200 and periodically distributed on the surface of the substrate 200, wherein the diffraction grating teeth 202 have a triangular cross-sectional shape along a direction perpendicular to the surface of the substrate 200 and include a blaze surface S1 and a back blaze surface S2, and the connection position between the blaze surface S1 and the back blaze surface S2 constitutes the pointed angle of the apex of the triangle, A first film layer 203 located on the surface of the blaze surface S1, It comprises a second film layer 404 located on the surface of the back blaze surface S2.

[0104] In this embodiment, the first angle α1 of the triangle is formed between the blaze surface S1 and the surface of the substrate 200, and the second angle α2 of the triangle is formed between the back blaze surface S2 and the surface of the substrate 200, with the first angle α1 being smaller than the second angle α2.

[0105] In this embodiment, the material of the first film layer 203 and the material of the second film layer 404 are the same. In another embodiment, the material of the first film layer and the material of the second film layer are different.

[0106] In this embodiment, the first film layer 203 includes a reflection-enhancing thin film or a transmission-enhancing thin film, and the second film layer 404 includes a reflection-enhancing thin film or a transmission-enhancing thin film. The material of the transmission-enhancing film includes titanium oxide, titanium nitride, tantalum oxide, or aluminum oxide, and the material of the reflection-enhancing film includes aluminum, silver, gold, or copper.

[0107] In this embodiment, the material for the diffraction grating structure is a mixture of organic material and inorganic particles, and the inorganic particles are titanium oxide.

[0108] Figures 12 and 13 are schematic diagrams showing the formation process of a semiconductor structure in one embodiment of the present invention.

[0109] Referring to Figure 12, which is a schematic diagram based on Figure 7, and Figure 13, which is a schematic diagram based on Figure 4, a film layer is formed on both the blaze surface S1 and the back blaze surface S2.

[0110] The method for forming film layers on both the blaze surface S1 and the back blaze surface S2 includes continuously rotating the aforementioned setting stage 305 while the angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure is within a predetermined range, and simultaneously depositing and forming a first film layer 503 on the blaze surface S1 and a second film layer 504 on the back blaze surface S2 when a first ion beam b1 generated from the first ion source 301 collides with a first target material 304 facing the first ion source 301.

[0111] In this embodiment, the material of the first film layer 503 and the material of the second film layer 504 are the same, and the first film layer 503 and the second film layer 504 are formed simultaneously.

[0112] In this embodiment, the predetermined range of the angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure is 0 to 180 degrees. The predetermined range of the angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure is set to 0 to 180 degrees, that is, the rotation axis is not adjusted, or the rotation axis is adjusted so that the mounting stage 305 is driven by the rotation axis and revolves within the vacuum chamber 300, so that the angle β1 between the horizontal lines L2 and L1 of the semiconductor structure is within an arbitrary angular range. Since the mounting stage 305 is continuously rotating, even if the angle β1 between the horizontal lines L2 and L1 of the semiconductor structure is within an arbitrary angular range, film layers can be deposited on both the blaze surface S1 and the back blaze surface S2.

[0113] In this embodiment, the first ion beam b1 generated from the first ion source 301 includes a collisional ion beam. The collisional ion beam is formed from one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe. The collisional ion beam is used to collide with the first target material 304 and knock sputtered particles away from the first target material 304.

[0114] In this embodiment, the first film layer 503 includes a reflection-enhancing film, and the second film layer 504 includes a reflection-enhancing film. Examples of materials for the reflection-enhancing film include aluminum, silver, gold, or copper. The reflection-enhancing film is used to increase the reflectivity of the surface of the diffraction grating teeth 202. The process for forming the first film layer 503 and the second film layer 504 includes a sputtering deposition process.

[0115] In this embodiment, the temperature range for the process of forming the first film layer 503 and the second film layer 504 is less than 80°C. The process temperature is low. Within this temperature range, the material of the diffraction grating teeth exhibits stable performance, and deformation and distortion that adversely affect the performance of the diffraction grating structure are less likely to occur.

[0116] In another embodiment, the first film layer includes a permeability-enhancing film, and the second film layer includes a reflection-enhancing film. Examples of materials for the permeability-enhancing film include titanium oxide, titanium nitride, tantalum oxide, or aluminum oxide. The first ion beam generated from the first ion source includes a reactive ion beam. The reactive ion beam is an ion beam formed by a reactive gas, which is one or more combinations of oxygen, nitrous oxide, and nitrogen, and one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe. A sputtering deposition process is used to form the first and second film layers, in which the reactive gas reacts with target particles ejected after impact and is then deposited on the surface of the blaze or back blaze.

[0117] In this embodiment, the first film layer 503 has a thickness in the range of 0 to 300 nm, and the second film layer 504 has a thickness in the range of 0 to 300 nm.

[0118] In this embodiment, the material of the first target material 304 may be aluminum, copper, silver, titanium, tantalum, or gold.

[0119] Continuing to refer to Figure 12, in this embodiment, the first ion beam b1 generated from the first ion source 301 is brought into contact with the first target material 304 directed toward the first ion source 301, and simultaneously includes the following: A second ion beam b2 is generated using a second ion source 303 to assist in the formation of the first film layer 503 on the blaze surface S1, and the second ion source 303 is used to assist in the formation of the second film layer 504 on the back blaze surface S2.

[0120] The second ion beam b2 generated from the second ion source 303 includes either a collision ion beam or a reactive ion beam. The collision ion beam includes an ion beam formed from one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe. The reactive ion beam is formed from a reactive gas, which is one or more of the following: oxygen, nitrous oxide, and nitrogen, and one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe. The reactive gas reacts with the target particles ejected after the collision and deposits on the surface of the blaze surface or back blaze surface.

[0121] According to the second ion beam b2, the structures of the first film layer 503 and the second film layer 504 become denser, and the deposition rate can be increased.

[0122] In another embodiment, a second ion beam can be generated without using the second ion source.

[0123] In another embodiment, the first and second film layers have different thicknesses. By adjusting the angle between the normal and horizontal lines of the semiconductor structure, the deposition rates of the film layers on the blaze surface and the back blaze surface are made different, thereby forming the first and second film layers with different thicknesses.

[0124] Specifically, by adjusting the angle between the normal and horizontal lines of the semiconductor structure and utilizing the effect of the tips of the diffraction grating teeth blocking sputtered particles, the amount of sputtered particles from the target material reaching the blaze surface and the back blaze surface is made different, so that the deposition rates on the blaze surface and the back blaze surface are different, and a first film layer and a second film layer with different thicknesses are formed.

[0125] Furthermore, according to embodiments of the present invention, a semiconductor structure is also provided. Referring again to Figure 13, this semiconductor structure comprises a substrate 200, a diffraction grating structure located on the surface of the substrate 200, a first film layer 503 located on the surface of the blaze surface S1, and a second film layer 504 located on the surface of the back blaze surface S2. The diffraction grating structure includes a plurality of diffraction grating teeth 202 periodically distributed on the surface of the substrate 200; the diffraction grating teeth 202 have a triangular cross-sectional shape along a direction perpendicular to the surface of the substrate 200 and include a blaze surface S1 and a back blaze surface S2; and the connection position between the blaze surface S1 and the back blaze surface S2 constitutes the pointed angle of the apex of the triangle.

[0126] In this embodiment, the first angle α1 of the triangle is formed between the blaze surface S1 and the surface of the substrate 200, and the second angle α2 of the triangle is formed between the back blaze surface S2 and the surface of the substrate 200, with the first angle α1 being smaller than the second angle α2.

[0127] In this embodiment, the first film layer 503 and the second film layer 504 are made of the same material.

[0128] In this embodiment, the first film layer 503 and the second film layer 504 have different thicknesses.

[0129] In this embodiment, the first film layer 503 includes a reflection-enhancing thin film or a transmission-enhancing thin film, and the second film layer 504 includes a reflection-enhancing thin film or a transmission-enhancing thin film. The material of the transmission-enhancing film includes titanium oxide, titanium nitride, tantalum oxide, or aluminum oxide, and the material of the reflection-enhancing film includes aluminum, silver, gold, or copper.

[0130] In this embodiment, the material of the diffraction grating structure includes a mixture of organic material and inorganic particles, and the inorganic particles are titanium oxide.

[0131] The following describes a specific film coating process with reference to several embodiments.

[0132] For example, a permeability-enhancing film having a thickness of 0 to 300 nm and made of titanium oxide is deposited on the surface of the blaze surface S1, and then a coating layer having a thickness of 0 to 300 nm and made of aluminum is deposited on the surface of the permeability-enhancing film and the surface of the back blaze surface S2. The specific procedure is as follows: The angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure is adjusted to less than 60°, the aforementioned setting stage 305 is not rotated, and the blaze surface S1 is directed toward the first target material 304 made of titanium. Oxygen gas and argon gas are introduced into the first ion source 301, or oxygen gas is introduced to generate a first ion beam b1 which is made to collide with the titanium target material, and titanium particles ejected from the titanium target material by sputtering react with oxygen gas and are deposited on the surface of the blaze surface S1, forming a permeability-enhancing film made of titanium oxide. After the increased permeability film is formed, the angle β1 between the normal L1 and the horizontal L2 of the semiconductor structure is adjusted to an arbitrary angle, and the aforementioned setting stage 305 is rotated to switch the first target material to a second target material made of aluminum. Argon gas is introduced into the first ion source 301 to generate a first ion beam b1, which is made to collide with the aluminum target material. Aluminum particles ejected from the aluminum target material by sputtering are deposited synchronously on the surface of the increased permeability film on the blaze surface S1 and on the surface of the back blaze surface S2, forming a coating layer of aluminum material.

[0133] For example, a permeability-enhancing film with a thickness of 0 to 300 nm and made of tantalum oxide is deposited on the surface of the back blaze surface S2, and then a coating layer with a thickness of 0 to 300 nm and made of gold is deposited on the surface of the permeability-enhancing film and the surface of the blaze surface S1. The specific procedure is as follows: The angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure is adjusted to less than 60°, the aforementioned setting stage 305 is not rotated, and the back blaze surface S2 is directed toward the first target material 304 made of tantalum material. Oxygen gas and argon gas are introduced into the first ion source 301, or oxygen gas is introduced to generate a first ion beam b1 which is made to collide with the tantalum target material, and tantalum particles ejected from the tantalum target material by sputtering react with oxygen gas and are deposited on the surface of the back blaze surface S2, forming a permeability-enhancing film made of tantalum oxide material. After the increased permeability film is formed, the angle β1 between the normal L1 and the horizontal L2 of the semiconductor structure is adjusted to an arbitrary angle, and the aforementioned setting stage 305 is rotated to switch the first target material to a second target material made of gold. Argon gas is introduced into the first ion source 301 to generate a first ion beam b1, which is made to collide with the gold target material. Gold particles ejected from the gold target material are synchronously deposited on the surface of the increased permeability film on the back blaze surface S2 and on the surface of the blaze surface S1, forming a coating layer of gold material.

[0134] For example, a permeability-enhancing film with a thickness of 0 to 300 nm and made of titanium oxide is deposited on the surface of the blaze surface S1, and then a permeability-enhancing film with a thickness of 0 to 300 nm and made of silver is deposited on the surface of the back blaze surface S2. The specific procedure is as follows: The angle β1 between the normal L1 and the horizontal L2 of the semiconductor structure is adjusted to less than 60°, the aforementioned setting stage 305 is not rotated, and the blaze surface S1 is directed toward the first target material 304 made of titanium. Oxygen gas and argon gas are introduced into the first ion source 301, or oxygen gas is introduced to generate a first ion beam b1 which is made to collide with the titanium target material. Titanium particles ejected from the titanium target material by sputtering react with oxygen gas and are deposited on the surface of the blaze surface S1, forming a permeability-enhancing film made of titanium oxide. After the increased permeability film is formed, the first target material is switched to a second target material made of silver, and the setting stage 305 described above is rotated by 180 degrees while keeping the angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure unchanged, so that the non-blaze surface S2 faces the second target material. Argon gas is introduced into the first ion source 301 to generate the first ion beam b1, which is made to collide with the silver target material, and silver particles ejected from the silver target material by sputtering are deposited on the surface of the back blaze surface S2, forming an increased permeability film made of silver.

[0135] For example, a permeability-enhancing film with a thickness of 0 to 300 nm and made of aluminum is deposited on the surface of the blaze surface S1, then a permeability-enhancing film with a thickness of 0 to 300 nm and made of tantalum oxide is deposited on the surface of the back blaze surface S2, and then a coating layer with a thickness of 0 to 300 nm and made of gold is deposited on the surface of the permeability-enhancing film. The specific procedure is as follows: The angle β1 between the normal L1 and the horizontal L2 of the semiconductor structure is adjusted to less than 60°, the aforementioned setting stage 305 is not rotated, and the blaze surface S1 is directed toward the first target material 304 made of aluminum. Argon gas is introduced into the first ion source 301 to generate a first ion beam b1, which is made to collide with the aluminum target material, and aluminum particles ejected from the aluminum target material by sputtering form a permeability-enhancing film of aluminum on the surface of the blaze surface S1. After forming a permeability-enhancing film of aluminum material on the surface of the blaze surface S1, the first target material is switched to a second target material of tantalum material, and the setting stage 305 described above is rotated by 180 degrees while keeping the angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure unchanged, so that the non-blaze surface S2 faces the second target material. Oxygen gas and argon gas are introduced into the first ion source 301, or oxygen gas is introduced to generate a first ion beam b1 which is then made to collide with the tantalum target material. Tantalum particles ejected from the tantalum target material by sputtering react with oxygen gas and then deposit on the surface of the back blaze surface S2, forming a permeability-enhancing film of tantalum oxide material. After forming a permeability-enhancing film made of tantalum oxide, the second target material is switched to a third target material made of gold. Without changing the angle β1 between the normal L1 and the horizontal L2 of the semiconductor structure, the mounting stage 305 is not rotated, and argon gas is introduced into the first ion source 301 to generate a first ion beam b1, which is then made to collide with the gold target material. Gold particles ejected from the gold target material are deposited on the surface of the permeability-enhancing film on the back blaze surface S2, forming a gold coating layer.

[0136] For example, a permeability-enhancing film with a thickness of 0 to 300 nm and made of tantalum oxide is deposited on the surface of the blaze surface S1, then a permeability-enhancing film with a thickness of 0 to 300 nm and made of titanium oxide is deposited on the surface of the back blaze surface S2, and then a coating layer with a thickness of 0 to 300 nm and made of aluminum is deposited on the surface of the permeability-enhancing film on the blaze surface S1 and on the surface of the permeability-enhancing film on the non-blaze surface. The specific procedure is as follows: The angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure is adjusted to less than 60°, the aforementioned setting stage 305 is not rotated, and the blaze surface S1 is directed toward the first target material 304 made of tantalum material. Oxygen gas and argon gas are introduced into the first ion source 301, or oxygen gas is introduced to generate a first ion beam b1 which is then impacted onto the tantalum target material. Titanium particles ejected from the tantalum target material by sputtering react with the oxygen gas and then deposit on the surface of the blaze surface S1, forming a permeability-enhancing film of tantalum oxide material. After the permeability-enhancing film is formed on the surface of the blaze surface S1, the first target material is switched to a second target material made of titanium, and the setting stage 305 described above is rotated by 180 degrees while keeping the angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure unchanged, so that the non-blaze surface S2 faces the second target material. Oxygen gas and argon gas are introduced into the first ion source 301, or oxygen gas is introduced to generate a first ion beam b1 which is then impacted onto the titanium target material. Titanium particles ejected from the titanium target material by sputtering react with oxygen gas and then deposit on the surface of the back blaze surface S2, forming a permeability-enhancing film of titanium oxide material. After the permeability-enhancing film is formed on the blaze surface S1 and the surface of the back blaze surface S2, the angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure is adjusted to an arbitrary angle, and the aforementioned setting stage 305 is rotated to switch the second target material to a third target material made of aluminum.Argon gas is introduced into the first ion source 301 to generate the first ion beam b1, which is then made to collide with the aluminum target material. Aluminum particles ejected from the aluminum target material by sputtering are synchronously deposited on the surface of the increased permeability film on the blaze surface S1 and the back blaze surface S2, forming a coating layer of aluminum material.

[0137] For example, a permeability-enhancing film with a thickness of 0 to 300 nm and made of silver is deposited on the surface of the blaze surface S1, and then a permeability-enhancing film with a thickness of 0 to 300 nm and made of aluminum is deposited on the surface of the back blaze surface S2. The specific procedure is as follows: The angle β1 between the normal L1 and the horizontal L2 of the semiconductor structure is adjusted to less than 60°, the aforementioned setting stage 305 is not rotated, and the blaze surface S1 is directed toward the first target material 304 made of silver. Argon gas is introduced into the first ion source 301 to generate a first ion beam b1, which is made to collide with the silver target material, and silver particles ejected from the silver target material by sputtering are deposited on the surface of the blaze surface S1 to form a permeability-enhancing film made of silver. After a permeability-enhancing film is formed on the surface of the blaze surface S1, the first target material is switched to a second target material made of aluminum, and the setting stage 305 described above is rotated by 180 degrees while keeping the angle β1 between the normal L1 and the horizontal line L2 of the semiconductor structure unchanged, so that the non-blaze surface S2 faces the second target material. Argon gas is introduced into the first ion source 301 to generate a first ion beam b1, which is made to collide with the aluminum target material, and aluminum particles ejected from the aluminum target material by sputtering are deposited on the surface of the back blaze surface S2, forming a permeability-enhancing film made of aluminum.

[0138] Although the present invention is disclosed as described above, it is not limited thereto. Those skilled in the art can make various changes and modifications, as long as they do not deviate from the spirit and scope of the invention. Accordingly, the scope of protection of the present invention is determined by the scope limited by the claims.

Claims

1. To provide a substrate and a diffraction grating material layer located on the surface of the substrate, To provide master models for nanoimprint lithography, Using the aforementioned master model for nanoimprint lithography as a mold, the diffraction grating material layer is imprinted using a nanoimprint lithography process to form a diffraction grating structure on the surface of the substrate, wherein the diffraction grating teeth have a triangular cross-sectional shape along the direction perpendicular to the surface of the substrate and include a blaze surface and a back blaze surface, and the connection position between the blaze surface and the back blaze surface constitutes the pointed angle of the apex of the triangle. A method for forming a semiconductor structure, characterized by setting a range of the angle between the normal and the horizontal of a semiconductor structure including a substrate and diffraction grating teeth, thereby selectively forming a film layer on one or both sides of the blaze surface and the back blaze surface, wherein the film layer formed on the surface of the blaze surface is designated as the first film layer, and the film layer formed on the surface of the back blaze surface is designated as the second film layer.

2. The selective formation of a film layer on one or both sides of the blaze surface and the back blaze surface includes providing a film coating apparatus. The film coating apparatus includes a vacuum chamber with a first side wall and a second side wall facing each other, A first ion source fixed to the lower part of the first side wall, A rotatable target material holder fixed to the lower part of a second side wall, including at least two target material mounting positions, wherein by rotating the rotatable target material holder, each target material mounted at a target material mounting position faces the first ion source. A mounting device comprising a rotating shaft fixed to the upper part of a first side wall and a mounting stage connected to the rotating shaft, wherein the rotating shaft can drive the mounting stage to revolve clockwise or counterclockwise within the vacuum chamber, and the mounting stage is capable of rotating on its own axis with the center of the mounting stage as its center, The method for forming a semiconductor structure according to claim 1, further comprising a second ion source fixed to the upper part of the second side wall.

3. The selective formation of a film layer on one or both sides of the blaze surface and the back blaze surface is achieved by arranging a semiconductor structure including a substrate and diffraction grating teeth on a mounting stage. The rotation axis is driven to revolve the aforementioned mounting stage within the vacuum chamber, and the rotation axis is adjusted so that the angle between the normal and horizontal lines of the semiconductor structure, which are vertical lines perpendicular to the surface of the substrate, is within a predetermined range. A method for forming a semiconductor structure according to claim 2, characterized in that it includes generating a first ion beam using a first ion source and causing it to collide with a target material facing the first ion source to form a film layer on one or both sides of the blaze surface and the back blaze surface.

4. The method for forming a semiconductor structure according to claim 3, characterized in that the angle between the normal and the horizontal of the semiconductor structure is less than 60° within a predetermined range.

5. Forming a film layer on only one side of the blaze surface and the back blaze surface is done by adjusting the rotation axis so that the angle between the normal and the horizontal line of the semiconductor structure falls within a predetermined range, and the blaze surface faces the first target material, or the back blaze surface faces the first target material. A method for forming a semiconductor structure according to claim 4, comprising generating a first ion beam using a first ion source, causing it to collide with a first target material facing the first ion source, and depositing and forming a first film layer on the blaze surface facing the first target material, or depositing and forming a second film layer on the back blaze surface facing the first target material.

6. The method for forming a semiconductor structure according to claim 5, characterized in that the first and second film layers of the same material are formed on both the blaze surface and the back blaze surface, comprising: first depositing and forming the first film layer on the blaze surface facing the first target material, or first depositing and forming the second film layer on the back blaze surface facing the first target material, then rotating the aforementioned setting stage at a predetermined angle so that the blaze surface or back blaze surface on which no film layer is formed faces the first target material, thereby depositing and forming the second film layer on the back blaze surface on which no film layer is formed, or depositing and forming the first film layer on the blaze surface on which no film layer is formed.

7. The method for forming a semiconductor structure according to claim 6, further comprising placing a shielding plate above the blaze surface or back blaze surface on which the film layer is formed, before rotating the mounting stage at a predetermined angle.

8. The method for forming a semiconductor structure according to claim 6, characterized in that the predetermined angle for rotating the mounting stage is in the range of 150 degrees to 210 degrees.

9. Forming the first and second film layers, made of different materials, on both the blaze surface and the back blaze surface involves, after depositing and forming the first film layer on the blaze surface facing the first target material, or after depositing and forming the second film layer on the back blaze surface facing the first target material, placing a shielding plate above the blaze surface or back blaze surface on which the film layers are formed. The target material holder is rotated so that a second target material made of a different material from the first target material is directed toward the first ion source. The aforementioned placement stage is rotated 180 degrees so that the blaze surface or back blaze surface where no film layer is formed faces the second target material. A method for forming a semiconductor structure according to claim 5, characterized by comprising depositing and forming a second film layer on a back blaze surface where no film layer is formed, or depositing and forming a first film layer on a blaze surface where no film layer is formed.

10. The method for forming a semiconductor structure according to claim 3, characterized in that the angle between the normal and the horizontal of the semiconductor structure is within a predetermined range of 0 degrees to 180 degrees.

11. A method for forming a semiconductor structure according to claim 10, characterized in that the first and second film layers of the same material are formed on both the blaze surface and the back blaze surface, the setting stage described above is continuously rotated so that the angle between the normal and the horizontal line of the semiconductor structure is within a predetermined range, a first ion beam is generated using a first ion source and is made to collide with a first target material facing the first ion source, thereby depositing and forming the first film layer on the blaze surface, and simultaneously depositing and forming the second film layer on the back blaze surface.

12. A method for forming a semiconductor structure according to claim 11, further comprising using a first ion source to cause a first target material directed toward the first ion source to collide with the first ion source, simultaneously using a second ion source to generate a second ion beam to assist in the formation of the blaze surface with the first film layer, and using a second ion source to assist in the formation of the back blaze surface with the second film layer.

13. The method for forming a semiconductor structure according to claim 11, characterized in that the first and second film layers have different thicknesses, which includes adjusting the angle between the normal and the horizontal line of the semiconductor structure so that the deposition rates of the film layers on the blaze surface and the back blaze surface are different, thereby forming the first and second film layers with different thicknesses.

14. The first ion beam generated from the first ion source includes a collisional ion beam or a reactional ion beam. Colliding ion beams include ion beams formed from one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe. The method for forming a semiconductor structure according to claim 2, characterized in that the reactive ion beam is an ion beam formed by a reactive gas which is a combination of one or more gases selected from oxygen gas, nitrous oxide gas, and nitrogen gas, and one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe.

15. A method for forming a semiconductor structure according to claim 1, characterized in that a first angle of the triangle is formed between the blaze surface and the surface of the substrate, a second angle of the triangle is formed between the back blaze surface and the surface of the substrate, and the first angle is smaller than the second angle.

16. The method for forming a semiconductor structure according to claim 1, characterized in that the first film layer includes a reflection-enhancing thin film or a transmission-enhancing thin film, the second film layer includes a reflection-enhancing thin film or a transmission-enhancing thin film, the material of the transmission-enhancing film includes titanium oxide, titanium nitride, tantalum oxide, or aluminum oxide, and the material of the reflection-enhancing film includes aluminum, silver, gold, or copper.

17. The method for forming a semiconductor structure according to claim 1, characterized in that the material of the diffraction grating structure includes a mixture of organic material and inorganic particles, and the inorganic particles include titanium oxide.

18. The method for forming a semiconductor structure according to claim 1, characterized in that the process temperature range is less than 80°C in order to form a film layer on one or both sides of the blaze surface and the back blaze surface.

19. circuit board and A diffraction grating structure located on the surface of the substrate, comprising a plurality of diffraction grating teeth periodically distributed on the surface of the substrate, wherein the diffraction grating teeth have a triangular cross-sectional shape along a direction perpendicular to the surface of the substrate and include a blaze surface and a back blaze surface, and the connection position between the blaze surface and the back blaze surface constitutes the pointed angle of the apex of the triangle, A semiconductor structure characterized by comprising a film layer located on one or both sides of the blaze surface and the back blaze surface, wherein the film layer located on the surface of the blaze surface is a first film layer, and the film layer located on the surface of the back blaze surface is a second film layer.

20. The semiconductor structure according to claim 19, characterized in that the first film layer is located on the blaze surface and the second film layer is located on the back blaze surface, and the materials of the first film layer and the second film layer are the same.

21. The semiconductor structure according to claim 20, characterized in that the first film layer and the second film layer have different thicknesses.

22. The semiconductor structure according to claim 19, characterized in that the first film layer is located on the blaze surface and the second film layer is located on the back blaze surface, and the materials of the first film layer and the second film layer are different.

23. The semiconductor structure according to claim 19, characterized in that a first angle of the triangle is formed between the blaze surface and the surface of the substrate, a second angle of the triangle is formed between the back blaze surface and the surface of the substrate, and the first angle is smaller than the second angle.

24. The semiconductor structure according to claim 19, characterized in that the first film layer includes a reflection-enhancing thin film or a transmission-enhancing thin film, the second film layer includes a reflection-enhancing thin film or a transmission-enhancing thin film, the material of the transmission-enhancing film includes titanium oxide, titanium nitride, tantalum oxide, or aluminum oxide, and the material of the reflection-enhancing film includes aluminum, silver, gold, or copper.

25. The semiconductor structure according to claim 19, characterized in that the material of the diffraction grating structure includes a mixture of organic material and inorganic particles, and the inorganic particles include titanium oxide.

Images