Solar cell and method for manufacturing the same, photovoltaic module, and photovoltaic device

Abstract

This application relates to the technical field of solar cells, and more particularly to solar cells, methods for manufacturing the same, photovoltaic modules, and photovoltaic devices. The solar cell includes a first electrode layer, a hole transport layer, a first light absorption layer, an interconnection layer, a second light absorption layer, an electron transport layer, and a second electrode layer, all arranged sequentially in a first direction, wherein the interconnection layer is made of SnO x Including layers, SnO x The layer has at least three types of SnO x The material is included, and x gradually decreases from 2 to 1 along the first direction. The technical solution of the embodiment of this application improves the performance of the solar cell.

Description

[Technical Field]

[0001] (Cross-reference of related applications) This application claims priority to Chinese Patent Application 202310943482.3, filed on July 31, 2023, with the title of the invention "Solar cell and method for manufacturing the same, photovoltaic module, and photovoltaic device," and all contents of said application are incorporated into this application by reference.

[0002] This application relates to the technical field of solar cells, and more particularly to solar cells and methods for manufacturing the same, photovoltaic modules, and photovoltaic devices. [Background technology]

[0003] In recent years, global energy shortages and environmental pollution have become increasingly serious problems. Solar cells are attracting more and more attention as an ideal renewable energy source. Solar cells, also known as photovoltaic cells, are devices that directly convert light energy into electrical energy through the photoelectric effect or photochemical reaction. Solar cells achieved high photoelectric conversion efficiency rapidly in the first few years after their invention, and have good future application potential.

[0004] With the advancement of solar cell technology, the demands on solar cell performance, such as efficiency and stability, are increasing. Therefore, improving solar cell performance is a technological challenge that must be addressed urgently. [Overview of the project]

[0005] This application has been made in view of the above-mentioned problems, and aims to provide a solar cell, a method for manufacturing the same, a photovoltaic module, and a photovoltaic device, with the aim of improving the performance of solar cells.

[0006] In the first embodiment, the device includes a first electrode layer arranged sequentially in a first direction, a hole transport layer, a first light absorption layer, an interconnection layer, a second light absorption layer, an electron transport layer, and a second electrode layer, wherein the interconnection layer is made of SnO x Including a layer, the SnO xThe layer contains at least three types of SnO x materials, and provides a solar cell in which x gradually decreases from 2 to 1 along the first direction.

[0007] In an embodiment of the present application, a solar cell is provided that includes a first electrode layer, a hole transport layer, a first light absorption layer, an interconnecting layer, a second light absorption layer, an electron transport layer, and a second electrode layer, which are arranged in sequence in the first direction. The interconnecting layer is provided between the first light absorption layer and the second light absorption layer, and can be used as both the carrier transport layer of the first light absorption layer and the carrier transport layer of the second light absorption layer, so the manufacturing process of the solar cell is simplified. Specifically, the interconnecting layer includes a SnO x layer, and the SnO x layer contains at least three types of SnO x materials, and x gradually decreases from 2 to 1 along the first direction. Thus, the interconnecting layer plays a role in transporting carriers in the first light absorption layer and carriers in the second light absorption layer well, thereby improving the efficiency of the solar cell.

[0008] In one possible embodiment, the thickness d1 of the SnO x layer satisfies 1nm ≤ d1 ≤ 200nm.

[0009] <000022​​​​​​​​​​​​​​​​​​​​​​​​In one possible embodiment, the thickness d2 of the SnO2 layer satisfies 1 nm ≤ d2 ≤ 50 nm.

[0013] In one possible embodiment, the thickness d2 of the SnO2 layer satisfies 5nm ≤ d2 ≤ 10nm.

[0014] In one possible embodiment, the SnO y The layer thickness d3 satisfies the condition 1nm ≤ d3 ≤ 50nm.

[0015] In one possible embodiment, the SnO y The layer thickness d3 satisfies the condition 2nm ≤ d3 ≤ 8nm.

[0016] In one possible embodiment, the thickness d4 of the SnO layer satisfies 1 nm ≤ d4 ≤ 50 nm.

[0017] In one possible embodiment, the thickness d4 of the SnO layer satisfies 5 nm ≤ d4 ≤ 20 nm.

[0018] SnO2 layer, SnO y Setting the layers and the SnO layer within the above ranges is advantageous for improving the efficiency of the solar cell.

[0019] In one possible embodiment, the interconnection layer comprises the first light absorption layer and the SnO x It further includes a first hole blocking layer located between the layers.

[0020] In one possible embodiment, the solar cell further includes a second hole blocking layer located between the second light absorption layer and the electron transport layer.

[0021] In one possible embodiment, the material of the first electrode layer comprises a transparent conductive oxide, the transparent conductive oxide comprising at least one of indium tin oxide, gallium zinc oxide, lanthanum-based metal-doped indium oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, boron-doped zinc oxide, and aluminum-doped zinc oxide.

[0022] In one possible embodiment, the material of the hole transport layer comprises a P-type semiconductor, and the material of the electron transport layer comprises an N-type semiconductor.

[0023] In one possible embodiment, the material of the hole transport layer is [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, [4-(3,6-dibromo-9H-carbazole-9-yl)butyl]phosphonic acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly-3-hexylthiophene, triptycene-cored triphenylamine, 3,4-ethyl The electron transport layer material comprises at least one of the following: dioxythiophene-methoxytriphenylamine, N-(4-phenylamine)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide, and derivatives thereof, wherein the electron transport layer material comprises bathocuproine, [6,6]-phenyl-C61-isomethyl butyrate, [6,6]-phenyl-C71-methyl butyrate, C60, C70, SnO z (1.5 ≤ z ≤ 2), containing at least one of zinc oxide and its derivatives.

[0024] In one possible embodiment, the material of the first light-absorbing layer is a perovskite, and the material of the second light-absorbing layer is a perovskite.

[0025] Perovskite materials have advantages such as high conversion efficiency, low cost, and environmental friendliness, and can be applied to solar cells as very thin films, effectively improving the efficiency of solar cells.

[0026] In one possible embodiment, the first direction is the direction of incidence of sunlight, and the band gap of the material of the first light-absorbing layer is greater than the band gap of the material of the second light-absorbing layer.

[0027] When the first direction is the direction of incident sunlight, the first light-absorbing layer is irradiated with sunlight first. Therefore, setting the band gap of the material in the first light-absorbing layer to be larger than the band gap of the material in the second light-absorbing layer is advantageous for improving the efficiency of the solar cell.

[0028] In one possible embodiment, the chemical formula of the perovskite in the first and second light-absorbing layers is ABX3, where A is CH3(NH2)2 + CH(NH2)2 + CH3NH2 + Li + na + , K + , Rb + , Cs + It includes at least one of the following, where B is Pb + Be 2+ Mg 2+ Ca 2+ Sr 2+ Ba 2+ Zn 2+ , Ge 2+ Fe 2+ Co 2+ Ni 2+ It includes at least one of the following, and X is Cl - , Br - , I - SCN - , CNO - OCN - ,OSCN - SH - , OH - , CP - 5CN - SeCN- N3 - NO2 - It includes at least one of the following.

[0029] In one possible embodiment, the second electrode layer comprises a metal, the metal comprising at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten, and alloys thereof.

[0030] In one possible embodiment, the material of the first hole blocking layer is fullerene and its derivatives, SnO z It includes at least one of the following: (1.5 ≤ z ≤ 2).

[0031] In one possible embodiment, the material of the second hole blocking layer is fullerene and its derivatives, SnO z It includes at least one of the following: (1.5 ≤ z ≤ 2).

[0032] In the second embodiment, the step of providing a first electrode layer, a hole transport layer, a first light absorption layer, an interconnection layer, a second light absorption layer, an electron transport layer, and a second electrode layer arranged sequentially in a first direction, wherein the interconnection layer is made of SnO x Including a layer, the SnO x The layer consists of at least three types of SnO x The present invention provides a method for manufacturing a solar cell, comprising a material, wherein x gradually decreases from 2 to 1 along the first direction.

[0033] In one possible embodiment, the step of providing a first electrode layer, a hole transport layer, a first light absorption layer, an interconnecting layer, a second light absorption layer, an electron transport layer, and a second electrode layer, which are arranged in sequence in a first direction, includes the step of providing the first electrode layer, the step of manufacturing the hole transport layer on the first electrode layer, the step of manufacturing the first light absorption layer on the hole transport layer, the step of manufacturing the interconnecting layer on the first light absorption layer, the step of manufacturing the second light absorption layer on the interconnecting layer, the step of manufacturing the electron transport layer on the second light absorption layer, and the step of manufacturing the second electrode layer on the electron transport layer.

[0034] In one possible embodiment, the step of manufacturing the interconnecting layer on the first light absorption layer includes forming the interconnecting layer by manufacturing a SnO x layer on the first light absorption layer.

[0035] In one possible embodiment, the step of manufacturing the SnO x layer on the first light absorption layer includes manufacturing a SnO2 layer on the first light absorption layer, manufacturing a SnO y layer (1 < y < 2) on the SnO2 layer, and manufacturing a SnO layer on the SnO y layer to manufacture the SnO x layer.

[0036] In one possible embodiment, the step of manufacturing the SnO x layer on the first light absorption layer includes manufacturing the SnO x (1 ≤ x ≤ 2) material on the first light absorption layer by using an atomic layer deposition device to deposit the SnO x layer, and adjusting the ratio of tin element to oxygen element in the SnO x material during the deposition process of the SnO x material, so that along the first direction, x gradually decreases from 2 to 1.

[0037] In one possible embodiment, the SnO xThe layer thickness d1 satisfies the condition 1nm ≤ d1 ≤ 200nm.

[0038] In one possible embodiment, the SnO x The layer thickness d1 satisfies the condition 5nm ≤ d1 ≤ 20nm.

[0039] In one possible embodiment, the thickness d2 of the SnO2 layer satisfies 1 nm ≤ d2 ≤ 50 nm.

[0040] In one possible embodiment, the thickness d2 of the SnO2 layer satisfies 5nm ≤ d2 ≤ 10nm.

[0041] In one possible embodiment, the SnO y The layer thickness d3 satisfies the condition 1nm ≤ d3 ≤ 50nm.

[0042] In one possible embodiment, the SnO y The layer thickness d3 satisfies the condition 2nm ≤ d3 ≤ 8nm.

[0043] In one possible embodiment, the thickness d4 of the SnO layer satisfies 1 nm ≤ d4 ≤ 50 nm.

[0044] In one possible embodiment, the thickness d4 of the SnO layer satisfies 5 nm ≤ d4 ≤ 20 nm.

[0045] In a third aspect, a photovoltaic module is provided, comprising a solar cell as described in the first aspect and any one possible embodiment thereof, and / or a solar cell manufactured by a manufacturing method as described in the second aspect and any one possible embodiment thereof.

[0046] In the fourth aspect, a photovoltaic device is provided that includes the photovoltaic module described in the third aspect. [Brief explanation of the drawing]

[0047] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments of this application are briefly described below. The drawings described below are merely examples of some embodiments of this application, and it will be apparent that those skilled in the art can conceive of other drawings based on these drawings without any creative effort.

[0048] [Figure 1] This is a schematic diagram of a solar cell according to one embodiment of the present application. [Figure 2] This is a schematic diagram of a solar cell according to one embodiment of the present application. [Figure 3] This is a schematic diagram of a method for manufacturing a solar cell according to one embodiment of this application. [Modes for carrying out the invention]

[0049] The following describes in detail embodiments specifically disclosing the solar cell, its manufacturing method, photovoltaic module, and photovoltaic device of this application, with appropriate reference to the drawings. However, unnecessary detailed explanations may be omitted. For example, detailed explanations of well-known matters and redundant explanations of identical structures may be omitted. This is to avoid unnecessarily verbose explanations, making them easy for those skilled in the art to understand. Furthermore, the drawings and the following explanation are provided to enable those skilled in the art to fully understand this application and are not intended to limit the intent of the claims.

[0050] The “range” disclosed in this application is limited by a lower and upper limit, and a given range is limited by selecting one lower limit and one upper limit, and the boundaries of a particular range are limited by the selected lower and upper limits. Such limited ranges may or may not include endpoint values ​​and can be combined arbitrarily, that is, any lower limit and any upper limit can be combined to form a single range. For example, if the ranges 60-120 and 80-110 are listed for a particular parameter, the ranges 60-110 and 80-120 are also understood to be predictable. Also, if the minimum range values ​​are 1 and 2 and the maximum range values ​​are 3, 4 and 5, then the ranges 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5 are all predictable. In this application, unless otherwise specified, the numerical range “a-b” represents an abbreviated expression for any combination of real numbers between a and b, where both a and b are real numbers. For example, the numerical range "0 to 5" indicates that all real numbers between "0 to 5" are listed in this specification, and "0 to 5" is merely an abbreviated representation of combinations of these numbers. Furthermore, when a parameter is described as being an integer of 2 or more, it is equivalent to disclosing that the parameter is an integer such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, or 12.

[0051] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical solutions.

[0052] Unless otherwise specified, all technical features and optional technical features of this application can be combined to form new technical solutions.

[0053] Unless otherwise specified, all steps of this application may be performed sequentially or randomly, preferably in order. For example, when the method includes steps (a) and (b), it means that the method may include steps (a) and (b) performed in order, or steps (b) and (a) performed in order. For example, when the method further includes step (c), it means that step (c) may be added to the method in any order, for example, the method may include steps (a), (b), and (c), or steps (a), (c), and (b), or steps (c), (a), and (b), or otherwise.

[0054] Unless otherwise specified, the terms "includes" and "incorporates" in this application represent open expressions. For example, the terms "includes" and "incorporates" may further include or may incorporate other components not listed.

[0055] Unless otherwise specified, the term "and / or" is inclusive in this application. For example, the phrase "A and / or B" means "A, B, or both A and B." More specifically, any of the following conditions satisfy the "A and / or B" condition: A is true (or exists) and B is false (or does not exist), A is false (or does not exist) and B is true (or exists), or both A and B are true (or exist).

[0056] Solar cells have good future application potential due to their high photoelectric conversion efficiency. In solar cells, the placement of each film layer is extremely important for the performance of the solar cell, including stability and efficiency. Currently, to simplify the manufacturing process of solar cells and reduce the risk of performance degradation due to complex processes, an interconnect layer containing tin oxide is provided between the two light-absorbing layers of a stacked cell, simultaneously acting as a carrier transport layer for both light-absorbing layers. However, the tin oxide material currently used in interconnect layers is SnO 1.76Alternatively, it may be a single type of tin oxide, such as SnO2. Such single-type tin oxides have limited transport capacity for carriers in the two light-absorbing layers, thus affecting the performance of the solar cell.

[0057] In view of this, the embodiment of the present application includes a first electrode layer, a hole transport layer, a first light absorption layer, an interconnection layer, a second light absorption layer, an electron transport layer, and a second electrode layer, all arranged sequentially in a first direction, wherein the interconnection layer is made of SnO x Including layers, SnO x The layer has at least three types of SnO x The present invention provides a solar cell containing materials such that x gradually decreases from 2 to 1 along a first direction. In this manner, the interconnection layer effectively transports carriers in the first light absorption layer and the second light absorption layer, thereby improving the efficiency of the solar cell.

[0058] [Solar cell] Figure 1 is a schematic diagram of a solar cell according to one embodiment of the present application. As shown in Figure 1, the solar cell 10 includes a first electrode layer 11, a hole transport layer 12, a first light absorption layer 13, an interconnection layer 14, a second light absorption layer 15, an electron transport layer 16, and a second electrode layer 17, all arranged sequentially in a first direction.

[0059] The first direction may be the thickness direction of the solar cell. For example, as shown in Figure 1, the first direction is the L direction (the direction indicated by the arrow).

[0060] The interconnection layer 14 is SnO x Includes layer 141, SnO x Layer 141 contains at least three types of SnO x Including the material, x gradually decreases from 2 to 1 along the first direction.

[0061] The term SnO here refers to... x Layer 141 contains at least three types of SnO x Including the material, if x gradually decreases from 2 to 1 along the first direction, then SnO x Layer 141 is SnO xIt may include at least three film layers containing materials, and the SnO x materials in each film layer are different. For example, along the first direction, the SnO x material in the first SnO x film layer is SnO2, the SnO x material in the second SnO x film layer is SnO 1.5 (not shown), and the SnO x material in the third SnO x film layer is SnO 1.3 (not shown), and the SnO x material in the fourth SnO x film layer is SnO. As described above, it has been explained that the SnO x layer 141 includes four SnOx materials. However, in the technical solution of the embodiment of the present application, the SnO x layer 141 is not limited to including four SnOx materials. The SnO x layer 141 may include three types of SnO x materials, five SnOx materials, six SnOx materials, and so on. It should be understood that along the first direction, the SnO x materials in each film layer included in the SnO x layer 141 are different, and the SnO x materials in the same film layer are the same.

[0062] In the technical solution of the embodiment of the present application, the SnO x layer 141 included in the interconnecting layer 14 includes at least three types of SnO x materials, and x gradually decreases from 2 to 1 along the first direction. The interconnecting layer 14 with such a structure plays a role in transporting the carriers in the first light absorption layer 13 and the second light absorption layer 15 well, thereby improving the efficiency of the solar cell 10.

[0063] The first light-absorbing layer 13 and the second light-absorbing layer 15 can generate electron-hole pairs when irradiated with sunlight. The materials in the first light-absorbing layer 13 and the second light-absorbing layer 15 are light-absorbing materials, and may be, for example, perovskite materials. Perovskite materials have advantages such as high conversion efficiency, low cost, and environmental friendliness, and can be applied to solar cells as very thin films, effectively improving the efficiency of solar cells.

[0064] The hole transport layer 12 is used to transport holes. The material of the hole transport layer 12 includes a P-type semiconductor. A P-type semiconductor, also called a hole-type semiconductor, is a semiconductor whose electrical conduction is mainly due to positively charged holes.

[0065] The electron transport layer 16 is used to transport electrons. The material of the electron transport layer 16 includes an N-type semiconductor. An N-type semiconductor, also called an electron-type semiconductor, is a semiconductor whose electrical conduction is mainly carried out by negatively charged electrons.

[0066] The first electrode layer 11 and the second electrode layer 17 are electrically conductive film layers. By connecting the first electrode layer 11 and the second electrode layer 17, a photocurrent can be generated, thereby supplying electrical energy to an electrical device.

[0067] The solar cell 10 provided in the embodiment of this application includes a first electrode layer 11 arranged sequentially in a first direction, a hole transport layer 12, a first light absorption layer 13, an interconnection layer 14, a second light absorption layer 15, an electron transport layer 16, and a second electrode layer 17. The interconnection layer 14 is provided between the first light absorption layer 13 and the second light absorption layer 15 and can be used as both the carrier transport layer of the first light absorption layer 13 and the carrier transport layer of the second light absorption layer 15, thereby simplifying the manufacturing process of the solar cell 10. Specifically, the interconnection layer 14 is made of SnO x Includes layer 141, SnO x Layer 141 contains at least three types of SnO xIt contains materials, and x gradually decreases from 2 to 1 along the first direction. In this way, the interconnecting layer 14 plays a role in transporting carriers in the first light absorption layer 13 and carriers in the second light absorption layer 15 well, thereby improving the efficiency of the solar cell 10.

[0068] In some embodiments, as shown in FIG. 1, SnO x The thickness d1 of the layer 141 satisfies 1 nm ≤ d1 ≤ 200 nm. Optionally, it satisfies 5 nm ≤ d1 ≤ 20 nm.

[0069] Specifically, the thickness d1 of the SnO x layer 141 may be 1 nm, 10 nm, 20 nm, 50 nm, 80 nm, 100 nm, 150 nm, 180 nm, 200 nm, or a value between any two of the above numerical values.

[0070] SnO x By setting the thickness of the layer 141 within the above range, it is beneficial to improve the efficiency of the solar cell.

[0071] Optionally, in some embodiments, as shown in FIG. 2, SnO x layer 141 includes a SnO2 layer 1411, a SnO y layer 1412 and a SnO layer 1413. The SnO y layer 1412 is located between the SnO2 layer 1411 and the SnO layer 1413. The SnO layer 1413 is located between the SnO y layer 1412 and the second light absorption layer 15, and y satisfies 1 < y < 2.

[0072] In some embodiments, as shown in FIG. 2, the thickness d2 of the SnO2 layer 1411 satisfies 1 nm ≤ d2 ≤ 50 nm. Optionally, d2 satisfies 5 nm ≤ d2 ≤ 10 nm.

[0073] Specifically, the thickness d2 of the SnO2 layer 1411 may be 1 nm, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, or a value between any two of the above numerical values.

[0074] Setting the thickness d2 of the SnO2 layer 1411 within the above range is advantageous for improving battery performance.

[0075] In some embodiments, as shown in Figure 2, SnO y The thickness d3 of layer 1412 satisfies 1nm ≤ d3 ≤ 50nm. Selectively, d3 satisfies 2nm ≤ d3 ≤ 8nm.

[0076] Specifically, SnO y The thickness d3 of layer 1412 may be 1 nm, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, or any two of the above values.

[0077] In some embodiments, as shown in Figure 2, the thickness d4 of the SnO layer 1413 satisfies 1 nm ≤ d4 ≤ 50 nm. Selectively, d4 satisfies 5 nm ≤ d4 ≤ 20 nm.

[0078] Specifically, the thickness d4 of the SnO layer 1413 may be 1 nm, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, or any two of the above values.

[0079] SnO2 layer 1411, SnO y Setting layer 1412 and SnO layer 1413 within the above ranges is advantageous for improving the efficiency of the solar cell.

[0080] In the technical solution of the embodiment of this application, the thickness of each film layer can be measured using a step gauge, and a known measurement method using a step gauge can be used for specific measurement methods.

[0081] Selectively, in some embodiments, as shown in Figure 2, the interconnection layer 14 is connected to the first light absorption layer 13 and SnO x It further includes a first hole blocking layer 142 located between layer 141 and the other layer.

[0082] The first hole blocking layer 142 is capable of transporting electrons. The material of the first hole blocking layer 142 is fullerene and its derivatives, SnO z The material must include at least one of the following values: (1.5 ≤ z ≤ 2). For example, if the value of z is 2, the material of the first hole blocking layer 142 may include SnO2.

[0083] Selectively, in some embodiments, continuing with reference to Figure 2, the solar cell 10 further includes a second hole blocking layer 18 located between the second light absorption layer 15 and the electron transport layer 16.

[0084] The second hole blocking layer 18 is capable of transporting electrons. The material of the second hole blocking layer 18 is fullerene and its derivatives, SnO z The material must include at least one of the following values: (1.5 ≤ z ≤ 2). For example, if the value of z is 2, the material of the second hole blocking layer 18 may include SnO2.

[0085] In some embodiments, the material of the first electrode layer 11 includes a transparent conductive oxide. Selectively, the transparent conductive oxide includes at least one of indium tin oxide, gallium zinc oxide, lanthanum-based metal-doped indium oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, boron-doped zinc oxide, and aluminum-doped zinc oxide.

[0086] Selectively, the material of the hole transport layer 12 includes at least one of the following: [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, [4-(3,6-dibromo-9H-carbazole-9-yl)butyl]phosphonic acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly-3-hexylthiophene, triptycene-cored triphenylamine, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-phenylamine)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide, and derivatives thereof.

[0087] Selectively, the materials for the electron transport layer 16 are bathocuproine, [6,6]-phenyl-C61-isomethyl butyrate, [6,6]-phenyl-C71-methyl butyrate, C60, C70, SnO z (1.5 ≤ z ≤ 2), containing at least one of zinc oxide and its derivatives.

[0088] In some embodiments, the material of the first light-absorbing layer 13 is a perovskite, and the material of the second light-absorbing layer 15 is a perovskite.

[0089] Selectively, in some embodiments, the first direction is the direction of incidence of sunlight, for example, the L direction (direction indicated by the arrow) in Figures 1-2, and the band gap of the material of the first light absorption layer 13 is larger than the band gap of the material of the second light absorption layer 15.

[0090] The band gap refers to the energy difference between the lowest conduction band and the highest valence band in a semiconductor material.

[0091] Selectively, the band gap of the material in the first light-absorbing layer 13 is 1.6 eV to 2.34 eV, and the band gap of the material in the second light-absorbing layer 15 is 1.0 eV to 1.4 eV. For example, the perovskite material in the first light-absorbing layer 13 is a bromine-iodine mixed perovskite, and the perovskite material in the second light-absorbing layer 15 is a tin-lead mixed perovskite.

[0092] Selectively, in some embodiments, the material of the second light-absorbing layer 15 is silicon, copper-indium-gallium-selenium, copper-indium-selenium, cadmium telluride, or gallium arsenide.

[0093] When the first direction is the direction of incidence of sunlight, the first light-absorbing layer 13 is irradiated with sunlight first. Therefore, setting the band gap of the material of the first light-absorbing layer 13 to be larger than the band gap of the material of the second light-absorbing layer 15 is advantageous for improving the efficiency of the solar cell.

[0094] In some examples, the chemical formula of the perovskite in the first light-absorbing layer 13 and the second light-absorbing layer 15 is ABX3, where A is CH3(NH2)2 + CH(NH2)2 + CH3NH2 + Li + na + , K + , Rb + , Cs + It includes at least one of the following, where B is Pb + Be 2+ Mg 2+ Ca 2+ Sr 2+ Ba 2+ Zn 2+ , Ge 2+ Fe 2+ Co 2+ Ni 2+ It includes at least one of the following, and X is Cl - , Br - , I - SCN - , CNO - OCN - ,OSCN- SH - , OH - , CP - 5CN - SeCN - N3 - NO2 - It includes at least one of these. In this way, it becomes easier to flexibly select the specific type of perovskite according to actual needs.

[0095] In some embodiments, the second electrode layer 17 contains a metal. Selectively, the metal contains at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten, and alloys thereof.

[0096] [Method of manufacturing solar cells] The solar cell provided in the embodiments of this application has been described above. The method for manufacturing the solar cell provided in the embodiments of this application will be described below, and parts that are the same as those described above will not be repeated.

[0097] Figure 3 shows a method for manufacturing a solar cell according to one embodiment of the present application. As shown in Figure 3, the manufacturing method 300 includes the step of providing a first electrode layer, a hole transport layer, a first light absorption layer, an interconnection layer, a second light absorption layer, an electron transport layer, and a second electrode layer, all arranged sequentially in a first direction.

[0098] Here, the interconnection layer is SnO x Including layers, SnO x The layer consists of at least three types of SnO x Including the material, x gradually decreases from 2 to 1 along the first direction.

[0099] In some embodiments, the manufacturing method 300 includes providing a first electrode layer, manufacturing a hole transport layer on the first electrode layer, manufacturing a first light absorption layer on the hole transport layer, manufacturing an interconnecting layer on the first light absorption layer, manufacturing a second light absorption layer on the interconnecting layer, manufacturing an electron transport layer on the second light absorption layer, and manufacturing a second electrode layer on the electron transport layer.

[0100] In some embodiments, the manufacturing method 300 includes forming an interconnecting layer by manufacturing a SnO x layer on the first light absorption layer.

[0101] In some embodiments, the manufacturing method 300 includes manufacturing a SnO2 layer on the first light absorption layer, manufacturing a SnO y (1 < y < 2) layer on the SnO2 layer, and manufacturing a SnO layer on the SnO y layer to manufacture a SnO x layer.

[0102] In some embodiments, the manufacturing method 300 includes manufacturing a SnO x (1 ≤ x ≤ 2) material on the first light absorption layer by using an atomic layer deposition device to manufacture a SnO x layer.

[0103] Here, in the deposition process of the SnO x material, by adjusting the ratio of tin element to oxygen element in the SnO x material, along the first direction, x gradually decreases from 2 to 1.

[0104] For example, first deposit SnO2, and then adjust the SnO x material to SnO 1.76 and continue to deposit, then adjust the SnO x material to SnO 1.5 and continue to deposit, and finally adjust the SnO x material to SnO and deposit to finally form a SnO x layer.

[0105] In some embodiments, SnO x The layer thickness d1 satisfies 1nm ≤ d1 ≤ 200nm. Selectively, it satisfies 5nm ≤ d1 ≤ 20nm.

[0106] Specifically, SnO x The layer thickness d1 may be 1 nm, 10 nm, 20 nm, 50 nm, 80 nm, 100 nm, 150 nm, 180 nm, 200 nm, or any two of the above values.

[0107] SnO x Setting the layer thickness within the above range is advantageous for improving the efficiency and stability of solar cells.

[0108] In some examples, the thickness d2 of the SnO2 layer satisfies 1 nm ≤ d2 ≤ 50 nm. Selectively, d2 satisfies 5 nm ≤ d2 ≤ 10 nm.

[0109] Specifically, the thickness d2 of the SnO2 layer may be 1 nm, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, or any two of the above values.

[0110] Setting the thickness d2 of the SnO2 layer within the above range is advantageous for improving battery performance.

[0111] In some embodiments, SnO y The layer thickness d3 satisfies 1nm ≤ d3 ≤ 50nm. Selectively, d3 satisfies 2nm ≤ d3 ≤ 8nm.

[0112] Specifically, SnO y The layer thickness d3 may be 1 nm, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, or any two of the above values.

[0113] In some examples, the thickness d4 of the SnO layer satisfies 1 nm ≤ d4 ≤ 50 nm. Selectively, d4 satisfies 5 nm ≤ d4 ≤ 20 nm.

[0114] Specifically, the thickness d4 of the SnO layer may be 1 nm, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, or any two of the above values.

[0115] SnO2 layer, SnO y Setting the layers and the SnO layer within the above ranges is advantageous for improving the efficiency and stability of the solar cell.

[0116] Embodiments of this application further provide a photovoltaic module. Typically, a photovoltaic module includes the above-mentioned solar cell, a ribbon for connecting multiple solar cells, a junction box for current transmission, and a battery package member.

[0117] In some embodiments, the battery package component includes photovoltaic glass. The photovoltaic glass covers the solar cell and provides protection for the solar cell. At the same time, the photovoltaic glass has very good light transmittance and very high hardness, making it suitable for large diurnal temperature differences and harsh weather environments.

[0118] In some embodiments, the battery package component includes an EVA film. The EVA film is placed between the photovoltaic glass and the solar cell and is used to bond the photovoltaic glass and the solar cell.

[0119] In some embodiments, the battery package component includes a photovoltaic backplane. The photovoltaic backplane also provides protection for the solar cell.

[0120] Selectively, the material of the photovoltaic backplane may be a polyvinyl fluoride composite film or a thermoplastic elastic material. The material of the photovoltaic backplane has properties such as insulation, water resistance, and aging resistance.

[0121] In some embodiments, the battery package component includes an aluminum frame for the solar cell. The aluminum frame for the solar cell is made of an aluminum alloy material and has features such as high strength and good corrosion resistance, and can support and protect the solar cell.

[0122] Embodiments of this application further provide a photovoltaic device including the photovoltaic module provided in the above embodiment.

[0123] In some embodiments, the photovoltaic device may be a lighting device, an energy storage device, etc., and the embodiments of this application include, but are not limited to, these. For example, the photovoltaic device may be a solar water heater, a solar street light, a photovoltaic generator, etc.

[0124] [Examples] Examples of the present application are described below. The examples described below are illustrative and are for interpretive purposes only, and should not be understood as limiting this application. Unless otherwise specified in the examples, specific techniques or conditions are followed in accordance with the techniques or conditions described in the literature in the art, or in the specifications of the products. Unless otherwise specified, the reagents or equipment used are common commercially available products.

[0125] 1. Manufacturing of solar cells [Example 1] Example 1 corresponds to the structure of the solar cell shown in Figure 1.

[0126] First electrode layer: The first electrode layer is provided on the glass substrate. The material of the first electrode layer is indium tin oxide (ITO). The glass substrate having the above first electrode layer is washed sequentially with acetone, alcohol, and deionized water, and then dried in an oven.

[0127] Hole transport layer: 0.3 mg of MeO-4PACz was added to 1 mL of ethanol and stirred. The ethanol solution of MeO-4PACz was spin-coated onto the first electrode layer 11 (spin-coating rotation speed: 4000 rpm, spin-coating time: 30 s), and then transferred to a hot table and annealed at 100°C for 10 min to form the hole transport layer.

[0128] First light absorption layer: 123 mg of CH(NH2)2I, 59 mg of CH(NH2)2Br, 46 mg of CsI, 25 mg of CsBr, 428 mg of PbI2, and 209 mg of PbBr2 were added to 1 mL of a mixed solvent of DMF and DMSO (volume ratio of DMF to DMSO: 3:1), stirred with a magnetic stirrer at 600 rpm for 2 hours, and filtered to prepare a perovskite precursor solution. 100 μL of the above perovskite precursor solution was spin-coated onto the hole transport layer (spin-coating at a spin-coating speed of 2000 rpm for 10 s, and then spin-coating at a spin-coating speed of 4000 rpm for 30 s). Then, 250 μL of chlorobenzene was dropped onto the spin-coated perovskite precursor solution, followed by spin-coating with the perovskite precursor solution. Finally, the solution was transferred to a hot table and annealed at 100°C for 10 minutes to form the first light absorption layer.

[0129] Interconnection layer: Using an atomic layer deposition (ALD) device, SnO is used in the first light absorption layer. x The material is deposited to form a 15nm SnO x An interconnection layer was formed by manufacturing one layer of SnO. x In the material deposition process, SnO x The ratio of tin and oxygen elements in the material was adjusted. Here, x gradually decreased from 2 to 1 along the direction away from the first light absorption layer.

[0130] Second light absorption layer: 216 mg of CH(NH2)2I, 85 mg of CH3NH2I, 414 mg of PbI2, 335 mg of SnI2, and 0.3 mg of MeO-4PACz were added to 1 mL of a mixed solvent of DMF and DMSO (volume ratio of DMF to DMSO: 3:1), stirred with a magnetic stirrer at 600 rpm for 2 hours, and filtered to prepare a perovskite precursor solution. 100 μL of the above perovskite precursor solution was spin-coated onto the interconnection layer (spin-coating at a spin-coating speed of 1000 rpm for 10 seconds, and then spin-coating at a spin-coating speed of 4000 rpm for 30 seconds). Then, 300 μL of ethyl acetate was dropped onto the spin-coated perovskite precursor solution, followed by spin-coating with the perovskite precursor solution. Finally, the solution was transferred to a hot table and annealed at 100°C for 10 minutes to form a second light-absorbing layer.

[0131] Electron transport layer: An electron transport layer was formed by depositing a 10 nm thick layer of bathocuproine (BCP) onto the second light absorption layer described above.

[0132] Second electrode layer: A second electrode layer was formed by depositing a 100 nm thick layer of metallic copper (Cu) onto the electron transport layer. Finally, the solar cell of Example 1 was manufactured.

[0133] [Examples 2-6] Examples 2-6 were manufactured in the same manner as Example 1, but in Examples 2-6, SnO x They differ in that their layer thicknesses are 1 nm, 5 nm, 20 nm, 200 nm, and 250 nm, respectively.

[0134] [Example 7] Example 7 was manufactured in the same manner as Example 1, but differs in that the method of manufacturing the interconnection layer is different. In Example 7, one 8 nm SnO2 layer was fabricated on the first light absorption layer using an ALD device, and further, a 5 nm SnO2 layer was fabricated on the SnO2 layer. 1.77 One layer is fabricated, and finally, SnO 1.77 An interconnection layer was formed by fabricating a 15nm SnO layer on top of the existing layer.

[0135] [Examples 8-13] Examples 8-13 were manufactured in the same manner as Example 7, but differed in that the thickness of the SnO2 layer in Examples 8-13 was 1 nm, 5 nm, 10 nm, 50 nm, 0.1 nm, and 60 nm, respectively.

[0136] [Examples 14-19] Examples 14-19 were manufactured in the same manner as Example 7, but in Examples 14-19, SnO 1.77 They differ in that their layer thicknesses are 1 nm, 2 nm, 8 nm, 50 nm, 0.1 nm, and 60 nm, respectively.

[0137] [Examples 20-25] Examples 20-25 were manufactured in the same manner as Example 7, but differed in that the thickness of the SnO layer in Examples 20-25 was 1 nm, 5 nm, 20 nm, 50 nm, 0.1 nm, and 60 nm, respectively.

[0138] [Example 26] In Example 26, the manufacturing of the first electrode layer, hole transport layer, first light absorption layer, interconnection layer, second light absorption layer, electron transport layer, and second electrode layer is the same as in Example 1, except that the first light absorption layer and SnO x This differs from Example 1 in that a first hole blocking layer is provided between the layers, and a second hole blocking layer is provided between the second light absorption layer and the electron transport layer. Specifically, a first hole blocking layer is formed by depositing a 25 nm layer of C60 on the first light absorption layer, and then SnO is placed on the first hole blocking layer. x The layer was manufactured (SnO x (For the manufacturing process of the layers, please refer to Example 1.) A second hole blocking layer was formed by depositing a 25 nm layer of C60 onto the second light absorption layer, and then an electron transport layer was fabricated on the second hole blocking layer (for the manufacturing process of the electron transport layer, please refer to Example 1).

[0139] [Example 27] Example 27 was manufactured in the same manner as Example 1, but differed in that the material for the second light absorption layer was single-crystal silicon. In the manufacturing of the second light absorption layer, the single-crystal silicon was washed and textured with a strong alkali to texture both sides. Then, on the single-crystal silicon wafer with both sides textured, one layer of 5 nm intrinsic i-type amorphous silicon and 100 nm doped p-type amorphous silicon was manufactured on one side using a plasma-enhanced chemical vapor deposition (PECVD) device, and similarly, one layer of 5 nm intrinsic i-type amorphous silicon and 100 nm doped N-type amorphous silicon was manufactured on the other side using the same PECVD device. On the sample from which the amorphous silicon manufacturing was completed, the second light absorption layer was manufactured by manufacturing one layer of 100 nm ITO on each side of the sample using a physical vapor deposition (PVD) device.

[0140] [Comparative Example 1] Comparative Examples 1 and 2 were manufactured in the same manner as Example 1, but in Comparative Example 1, the interconnection layer consisted only of a SnO2 layer, while in Comparative Example 2, the interconnection layer consisted of a SnO2 layer. 1.77 It differs in that it includes only layers.

[0141] Next, I will explain the process of measuring the performance of solar cells.

[0142] 2. Measurement of solar cell performance Standard simulated sunlight (AM1.5G, 100mW / cm²) 2 The battery performance was measured and an IV curve was obtained under irradiation of ). The short-circuit current Jsc (unit: mA / cm²) was determined from the IV curve and the data fed back from the test equipment. 2 The open-circuit voltage Voc (unit: V), maximum optical output current Jmpp (unit: mA), and maximum optical output voltage Vmpp (unit: V) were obtained. The battery's curve factor FF (unit: %) was calculated using the formula FF = Jsc × Voc / (Jmpp × Vmpp). The battery's photoelectric conversion efficiency PCE (unit: %) was calculated using the formula PCE = Jsc × Voc × FF / Pin. Pin represents the input power, and its unit was mW.

[0143] The battery performance of Examples 1-27 and Comparative Examples 1-2, manufactured according to the method described above, was measured. Details of the measurement results are shown in Tables 1 and 2. In Table 1, d1 is SnO x This represents the thickness of the layer. In Table 2, d2 represents the thickness of the SnO2 layer, and d3 represents the thickness of the SnO 1.77 This represents the thickness of the layer, and d4 represents the thickness of the SnO layer. [Table 1] [Table 2]

[0144] As can be seen by comparing the results of Examples 1-25 and Comparative Examples 1-2, the interconnection layer between the first light absorption layer and the second light absorption layer contains multiple types of tin oxides, and along the direction of the first light absorption layer and the second light absorption layer, the SnO in the interconnection layer x By reducing the x-th layer from 2 to 1, the efficiency of the solar cell clearly improved.

[0145] As can be seen by comparing the results of Examples 1 to 6, SnO x By setting the layer thickness within an appropriate range, the effect of improving the efficiency of the solar cell becomes more pronounced. All other conditions being equal, SnO x By setting the layer thickness within the range of 1 nm to 200 nm, the effect of improving the efficiency of solar cells becomes more pronounced.

[0146] As can be seen by comparing the results of Examples 7-13, setting the thickness of the SnO2 layer within an appropriate range makes the improvement in solar cell efficiency more pronounced. All other conditions being equal, setting the thickness of the SnO2 layer within the range of 1nm to 50nm makes the improvement in solar cell efficiency even more pronounced.

[0147] As can be seen by comparing the results of Examples 7, 14-19, SnO 1.77 By setting the layer thickness within an appropriate range, the effect of improving the efficiency of the solar cell becomes more pronounced. All other conditions being equal, SnO 1.77By setting the layer thickness within the range of 1 nm to 50 nm, the effect of improving the efficiency of the solar cell becomes more pronounced.

[0148] As can be seen by comparing the results of Examples 7 and 20-25, setting the thickness of the SnO layer within an appropriate range makes the improvement in solar cell efficiency more pronounced. All other conditions being equal, setting the thickness of the SnO layer within the range of 1 nm to 50 nm makes the improvement in solar cell efficiency even more pronounced.

[0149] As can be seen by comparing the results of Example 1 and Example 26, providing a hole-blocking layer between the light-absorbing layer and the electron-transport layer is advantageous for improving the efficiency of the solar cell.

[0150] It should be noted that this application is not limited to the embodiments described above. The embodiments described above are merely illustrative, and all embodiments having substantially the same technical idea and achieving the same function and effect within the scope of the technical solutions of this application are included in the technical scope of this application. Furthermore, other forms that are constructed by adding various modifications to the embodiments that a person skilled in the art could conceive of, and by combining some of the components of the embodiments, are also included in the scope of this application, as long as they do not depart from the gist of this application.

Claims

1. It includes a first electrode layer, a hole transport layer, a first light absorption layer, an interconnection layer, a second light absorption layer, an electron transport layer, and a second electrode layer, all arranged sequentially in a first direction. The aforementioned interconnection layer is SnO ｘ Including a layer, the SnO ｘ The layer consists of at least three types of SnO ｘ A solar cell comprising a material, characterized in that x gradually decreases from 2 to 1 along the first direction.

2. The aforementioned SnO ｘ The solar cell according to claim 1, characterized in that the layer thickness d1 satisfies 1 nm ≤ d1 ≤ 200 nm.

3. The aforementioned SnO ｘ The solar cell according to claim 2, characterized in that the layer thickness d1 satisfies 5 nm ≤ d1 ≤ 20 nm.

4. The SnO ｘ layer includes an SnO ２ layer, an SnO ｙ layer, and an SnO layer. The SnO ｙ layer is located between the SnO ２ layer and the SnO layer. The SnO layer is located between the SnO ｙ layer and the second light absorption layer, and y satisfies 1 < y < 2. The solar cell according to any one of claims 1 to 3.

5. The aforementioned SnO ２ The solar cell according to claim 4, characterized in that the layer thickness d2 satisfies 1 nm ≤ d2 ≤ 50 nm.

6. The aforementioned SnO ２ The solar cell according to claim 5, characterized in that the layer thickness d2 satisfies 5 nm ≤ d2 ≤ 10 nm.

7. The aforementioned SnO ｙ The solar cell according to any one of claims 4 to 6, characterized in that the layer thickness d3 satisfies 1 nm ≤ d3 ≤ 50 nm.

8. The aforementioned SnO ｙ The solar cell according to claim 7, characterized in that the layer thickness d3 satisfies 2 nm ≤ d3 ≤ 8 nm.

9. The solar cell according to any one of claims 4 to 8, characterized in that the thickness d4 of the SnO layer satisfies 1 nm ≤ d4 ≤ 50 nm.

10. The solar cell according to claim 9, characterized in that the thickness d4 of the SnO layer satisfies 5 nm ≤ d4 ≤ 20 nm.

11. The interconnection layer consists of the first light absorption layer and the SnO ｘ A solar cell according to any one of claims 1 to 10, further comprising a first hole blocking layer located between the layers.

12. The solar cell according to any one of claims 1 to 11, further comprising a second hole blocking layer located between the second light absorption layer and the electron transport layer.

13. The solar cell according to any one of claims 1 to 12, characterized in that the material of the first electrode layer includes a transparent conductive oxide, the transparent conductive oxide includes at least one of indium tin oxide, gallium zinc oxide, lanthanum-based metal-doped indium oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, boron-doped zinc oxide, and aluminum-doped zinc oxide.

14. The solar cell according to any one of claims 1 to 13, characterized in that the material of the hole transport layer includes a P-type semiconductor, and the material of the electron transport layer includes an N-type semiconductor.

15. The material of the hole transport layer includes at least one of the following: [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, [4-(3,6-dibromo-9H-carbazole-9-yl)butyl]phosphonic acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly-3-hexylthiophene, triptycene-cored triphenylamine, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-phenylamine)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide, and derivatives thereof. The material of the electron transport layer is bathocuproine, [6,6]-phenyl-C61-isomethyl butyrate, [6,6]-phenyl-C71-methyl butyrate, C60, C70, SnO ｚ The solar cell according to claim 14, characterized by comprising (1.5 ≤ z ≤ 2), zinc oxide, and at least one of the derivatives thereof.

16. The solar cell according to any one of claims 1 to 15, characterized in that the material of the first light-absorbing layer is a perovskite, and the material of the second light-absorbing layer is a perovskite.

17. The solar cell according to claim 16, characterized in that the first direction is the incident direction of sunlight, and the band gap of the material of the first light-absorbing layer is larger than the band gap of the material of the second light-absorbing layer.

18. The chemical formulas of the perovskites in the first and second light-absorbing layers are ABX ３ And, A is CH ３ (NH ２ ) ２ ＋ CH(NH ２ ) ２ ＋ ,CH ３ NH ２ ＋ Li ＋ Na ＋ _K ＋ , Rb ＋ , Cs ＋ B includes at least one of the following, and B is Pb ＋ Be ２＋ Mg ２＋ Ca ２＋ , Sr ２＋ Ba ２＋ , Zn ２＋ , Ge ２＋ Fe ２＋ Co ２＋ Ni ２＋ It includes at least one of the following, and X is Cl － , Br － , I － SCN － , CNO － OCN － OSCN － SH － , OH － CP － , CN － SeCN － , N ３ － NO ２ － The solar cell according to claim 17, characterized in that it includes at least one of the following.

19. The solar cell according to any one of claims 1 to 18, characterized in that the second electrode layer contains a metal, and the metal contains at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten, and alloys thereof.

20. The first hole blocking layer comprises fullerene and its derivatives, and SnO ｚ The solar cell according to claim 11, characterized in that it includes at least one of (1.5 ≤ z ≤ 2).

21. The second hole blocking layer comprises fullerene and its derivatives, and SnO ｚ The solar cell according to claim 12, characterized in that it includes at least one of (1.5 ≤ z ≤ 2).

22. The process includes providing a first electrode layer, a hole transport layer, a first light absorption layer, an interconnection layer, a second light absorption layer, an electron transport layer, and a second electrode layer, all arranged sequentially in a first direction. The aforementioned interconnection layer is SnO ｘ Including a layer, the SnO ｘ The layer consists of at least three types of SnO ｘ A method for manufacturing a solar cell, comprising a material, characterized in that x gradually decreases from 2 to 1 along the first direction.

23. The step of providing a first electrode layer, a hole transport layer, a first light absorption layer, an interconnection layer, a second light absorption layer, an electron transport layer, and a second electrode layer arranged sequentially in a first direction is: The steps of providing the first electrode layer, The steps include manufacturing the hole transport layer on the first electrode layer, The steps include: manufacturing the first light absorption layer on the hole transport layer, The steps include manufacturing the interconnection layer on the first light absorption layer, The steps include manufacturing the second light-absorbing layer on the interconnection layer, The steps include manufacturing the electron transport layer on the second light absorption layer, The manufacturing method according to claim 22, characterized by comprising the step of manufacturing the second electrode layer on the electron transport layer.

24. The step of manufacturing the interconnection layer on the first light absorption layer is: The first light-absorbing layer is made of the SnO ｘ The manufacturing method according to claim 23, characterized by including the step of forming the interconnection layer by manufacturing the layer.

25. The first light-absorbing layer is made of the SnO ｘ The step of manufacturing the layer is, On the first light absorption layer, SnO ２ A layer is manufactured, and the SnO ２ SnO on the layer ｙ A layer (1 < y < 2) is manufactured, and the SnO ｙ By manufacturing an SnO layer on the layer, the SnO ｘ The manufacturing method according to claim 24, characterized by including the step of manufacturing a layer.

26. The first light-absorbing layer is made of the SnO ｘ The step of manufacturing the layer is, SnO is deposited onto the first light-absorbing layer by an atomic layer deposition device. ｘ (1 ≤ x ≤ 2) By depositing the material, the SnO ｘ The step includes manufacturing a layer, The aforementioned SnO ｘ During the material deposition process, the SnO is deposited such that x gradually decreases from 2 to 1 along the first direction. ｘ The manufacturing method according to claim 24, characterized by adjusting the ratio of tin and oxygen elements in the material.

27. The aforementioned SnO ｘ The manufacturing method according to any one of claims 22 to 26, characterized in that the thickness d1 of the layer satisfies 1 nm ≤ d1 ≤ 200 nm.

28. The aforementioned SnO ｘ The manufacturing method according to claim 27, characterized in that the thickness d1 of the layer satisfies 5 nm ≤ d1 ≤ 20 nm.

29. The aforementioned SnO ２ The manufacturing method according to claim 25, characterized in that the thickness d2 of the layer satisfies 1 nm ≤ d2 ≤ 50 nm.

30. The aforementioned SnO ２ The manufacturing method according to claim 29, characterized in that the thickness d2 of the layer satisfies 5 nm ≤ d2 ≤ 10 nm.

31. The aforementioned SnO ｙ The manufacturing method according to claim 25, characterized in that the thickness d3 of the layer satisfies 1 nm ≤ d3 ≤ 50 nm.

32. The aforementioned SnO ｙ The manufacturing method according to claim 31, characterized in that the thickness d3 of the layer satisfies 2 nm ≤ d3 ≤ 8 nm.

33. The manufacturing method according to claim 25, characterized in that the thickness d4 of the SnO layer satisfies 1 nm ≤ d4 ≤ 50 nm.

34. The manufacturing method according to claim 33, characterized in that the thickness d4 of the SnO layer satisfies 5 nm ≤ d4 ≤ 20 nm.

35. A photovoltaic module characterized by comprising a solar cell according to any one of claims 1 to 21, and / or a solar cell manufactured by a manufacturing method according to any one of claims 22 to 34.

36. A photovoltaic device characterized by including the photovoltaic module described in claim 35.

Images