Optoelectronic semiconductor device, and method for manufacturing an optoelectronic semiconductor device

Abstract

An optoelectronic semiconductor device (1) is defined as comprising a semiconductor chip (2) that emits electromagnetic radiation in a first wavelength range from a radiation exit surface (3) during operation, and a color setting structure (4) comprising a matrix material (5), a conversion element (6), and a filter element (7), wherein the conversion element (6) converts at least the electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, and the filter element (7) has a higher transmittance for the radiation in the first wavelength range compared to radiation of higher wavelengths. Furthermore, a method for manufacturing an optoelectronic semiconductor device is provided.

Description

[Technical Field]

[0001] Optoelectronic semiconductor devices are identified. Furthermore, methods for manufacturing optoelectronic semiconductor devices are identified. [Overview of the project] [Problems that the invention aims to solve]

[0002] The challenge to be addressed is to identify optoelectronic semiconductor devices that possess high temporal stability and / or conversion efficiency. Furthermore, methods for manufacturing these optoelectronic semiconductor devices will also need to be identified. [Means for solving the problem]

[0003] These problems are solved by an optoelectronic semiconductor device having the features of claim 1, and by a method having the steps of claim 17.

[0004] Advantageous embodiments of optoelectronic semiconductor devices and methods are described in each dependent claim.

[0005] In one embodiment, the optoelectronic semiconductor device comprises a semiconductor chip that emits electromagnetic radiation in a first wavelength range from its emission exit surface during operation. The optoelectronic semiconductor chip preferably comprises an epitaxially grown semiconductor stack having an active region adapted for generating electromagnetic radiation, such as a light-emitting diode chip. For this purpose, the active region may have, for example, a pn junction, a double heterostructure, a single quantum well structure, or a multiple quantum well structure. During operation, the semiconductor chip emits electromagnetic radiation preferably from the ultraviolet wavelength range or the visible wavelength range, and particularly preferably from the blue wavelength range. For example, the semiconductor chip emits electromagnetic radiation having a peak wavelength in the wavelength range of 420 nm to 500 nm.

[0006] In further embodiments, the optoelectronic semiconductor device includes a color setting structure. The color setting structure comprises a matrix material, a conversion element, and a filter element.

[0007] In a preferred embodiment, the color setting structure comprises a matrix material, a conversion element, and a filter element. Preferably, the color setting structure is located at least on the emission exit surface of the semiconductor chip. The color setting structure partially or completely surrounds the semiconductor chip. Preferably, the semiconductor chip is embedded in the color setting structure and / or the matrix material. Preferably, the semiconductor chip is surrounded by the matrix material. Particularly preferably, the surface of the semiconductor chip opposite the emission exit surface is located on a carrier element for stabilization and is not surrounded by the color setting structure and / or the matrix material. For example, the semiconductor chip and the color setting structure are embedded in a housing.

[0008] The conversion element and the filter element may be arranged in the same layer or in different layers. For example, the conversion element may be placed in a layer directly in contact with the semiconductor chip, while the filter element may be placed in a layer downstream of the layer containing the conversion element. The filter element and / or conversion element can be embedded in the matrix material.

[0009] In one embodiment, the matrix material is selected from polysiloxanes. A polysiloxane is an organosilicon compound in which two silicon atoms are bonded via an oxygen atom. It is preferable that the polysiloxane has an organic group on the silicon atoms. In particular, polysiloxane exhibits stronger crosslinking after curing compared to conventional silicon. Polysiloxane exhibits low viscosity in its liquid state. Furthermore, polysiloxane provides excellent thermal stability and electromagnetic radiation stability for semiconductor chips in the cured state. For example, the organic group may be a methoxy, methyl, phenyl, or phenoxy group. The polysiloxane may have multiple organic groups. The organic groups of the polysiloxane have a favorable effect on the refractive index of the matrix material.

[0010] Preferably, the matrix material comprises silicon, epoxy, or a mixture thereof, or is formed from these materials.

[0011] The conversion element may be a phosphor, for example, a ceramic phosphor and / or a quantum dot phosphor. The phosphor may be in the form of phosphor particles. The phosphor particles preferably comprise a crystalline, for example ceramic, host lattice into which a different element is introduced as an active element. The phosphor may, for example, be a ceramic material. For example, a combination of different phosphor materials can be used as the conversion element.

[0012] Preferably, the conversion element emits electromagnetic radiation from the cyan-green spectral region.

[0013] Preferably, the ceramic phosphor comprises a garnet phosphor. The garnet phosphor has the chemical formula Y₃(Al,Ga)₅O 12 :Ce, which is a YAG phosphor, or the chemical formula Lu₃(Al,Ga)₅O 12 :Ce, which is a LUAG phosphor, and it is particularly preferable. Furthermore, the ceramic phosphor may also include nitride and / or oxynitride phosphors. Examples of the nitride or oxynitride phosphors include alkaline earth silicon (oxy)nitride, oxynitride, aluminum oxynitride, silicon nitride, or sialon.

[0014] The ceramic phosphor is preferably selected from the following group.

[0015] Ce-doped garnets such as YAG and LuAG, for example (Y,Lu,Gd,Tb)₃(Al 3+ ,Ga 1-x ,Ga x )₅O 12 :Ce 3+ ;Eu 2+ / and / or Ce 3+ doped nitrides, for example (Ca,Sr)AlSiN₃:Eu 2+ / Ce 3+ , Sr(Ca,Sr)Si₂Al₂N₆:Eu 2+ / Ce 3+(SCASN), (Sr,Ca)AlSiN3*Si2N2O:Eu 2+ / Ce 3+ (Ca,Ba,Sr)2Si5N8:Eu 2+ / Ce 3+ SrLiAl3N4:Eu 2+ / Ce 3+ SrLi2Al2O2N2:Eu 2+ / Ce 3+ (Ca,Sr)Al (1-4x / 3) Si (1+x) N3:Eu / Ce(x=0.2-0.5), (La,Y)3Si6N 11 :Ce 3+ ;EU 2+ / Ce 3+ Doped sulfide, (Ba,Sr,Ca)Si2O2N2:Eu 2+ / Ce 3+ , SiAlON, orthosilicate nitride (e.g., AE 2-x-a RE x EU a Si 1-y O 4-x-2y N x ), orthosilicate (Ba,Sr,Ca)2SiO4:Eu 2+ , chlorosilicate (e.g., Ca8Mg(SiO4)4Cl2:Eu 2+ );Mn 4+ Doped fluorides, e.g., (K,Na)2(Si,Ti)F6:Mn 4+ ;EU 2+ or Ce 3+ Doped lithium silicate, for example (Li,Na,K,Rb,Cs)(Li3SiO4):E, where E is Eu 2+ Ce 3+ , or (Sr,Li)Li3AlO4:Eu 2+ / Ce 3+ , or SrLi3AlO4:Eu 2+ / Ce 3+ .

[0016] The ceramic phosphor is particularly preferably selected from the following group.

[0017] Ce such as YAG, LuAG 3+Doped garnet, e.g., (Y,Lu,Gd,Tb)3(Al 1-x ,Ga x )5O 12 :Ce 3+ ;Ce 3+ Doped nitrides, e.g., (Ca,Sr)AlSiN3:Ce 3+ Sr(Ca,Sr)Si2Al2N6:Ce 3+ (SCASN), (Sr,Ca)AlSiN3*Si2N2O:Ce 3+ (Ca,Ba,Sr)2Si5N8:Ce 3+ SrLiAl3N4:Ce 3+ SrLi2Al2O2N2:Ce 3+ ;Ce 3+ Doped nitrides, e.g., (Ca,Sr)Al (1-4x / 3) Si (1+x) N3:Ce;(x=0.2-0.5), (La,Y)3S i6 N 11 :Ce 3+ ;(Ba,Sr,Ca)Si2O2N2:Eu 2+ , SiAlON, orthosilicate nitride (e.g., AE 2-x-a RE x EU a Si 1-yO4-x-2y N x ), orthosilicate (Ba,Sr,Ca)2SiO4:Eu 2+ Chlorosilicate (e.g., Ca8Mg(SiO4)4Cl2:Eu) 2+ ); or Ce 3+ Doped lithium silicate, for example (Li,Na,K,Rb,Cs)(Li3SiO4):E, where E is Eu 2+ Ce 3+ , or (Sr,Li)Li3AlO4:Eu 2+ / Ce 3+ , or SrLi3AlO4:Eu 2+ / Ce 3+ .

[0018] Other examples of phosphors include, in particular, the following aluminum-containing and / or silicon-containing phosphor particles.

[0019] (Ba 1-x-y Sr xCa y )SiO₄:Eu 2+ (0≦x≦1, 0≦y≦1), (Ba 1-x-y Sr x Ca y )₃SiO₅:Eu 2+ (0≦x≦1, 0≦y≦1), Li₂SrSiO₄:Eu 2+ , oxynitrides, for example (Ba 1-x-y Sr x Ca y )Si₂O₂N₂:Eu 2+ (0≦x≦1; 0≦y≦1), SrSiAl₂O₃N₂:Eu 2+ , Ba 4-x Ca x Si₆OₓN<0xE2><0x82><0x88>:Eu 10 :Eu 2+ (0≦x≦1), (Ba₁- x Sr<0xE2><0x82><0x96>)Y₂Si₂Al₂O₂N₅:Eu x )Y₂Si₂Al₂O₂N₅:Eu 2+ (0≦x≦1), Sr<0xE2><0x82><0x96>Si<0xE2><0x82><0x91>Al<0xE2><0x82><0x9F>O<0xE2><0x82><0x95>N<0xE2><0x82><0x86>:Eu x Si (6-y) Al y O y N (8-y) :Eu 2+ (0.05≦x≦0.5; 0.001≦y≦0.5), Ba₃Si₆O 12 N₂:Eu 2+ , Si<0xE2><0x82><0x96>Al<0xE2><0x82><0x9F>O<0xE2><0x82><0x95>N<0xE2><0x82><0x86>:Eu 6-z Al z O z N 8-z :Eu 2+ (0≦z≦0.42), M<0xE2><0x82><0x96>Si<0xE2><0x82><0x91>Al<0xE2><0x82><0x9F>O<0xE2><0x82><0x95>N<0xE2><0x82><0x86>:Eu x Si 12-m-n Al m+n O n N 16-n :Eu 2+ (M=Li, Mg, Ca, Y; x=m / v; v is the valence of M, x≦2), M<0xE2><0x82><0x96>Si<0xE2><0x82><0x91>Al<0xE2><0x82><0x9F>O<0xE2><0x82><0x95>N<0xE2><0x82><0x86>:Ce x Si 12-m-n Al m+n O n N 16-n :Ce 3+ , AE<0xE2><0x82><0x96>RE<0xE2><0x82><0x9F>EuSi<0xE2><0x82><0x95>N<0xE2><0x82><0x86> (AE=Sr, Ba, Ca, Mg; RE=rare earth element), AE<0xE2><0x82><0x96>RE 2-x-a RE x Eu a Si 1-y O 4-x-2y N x (AE=Sr, Ba, Ca, Mg; RE=rare earth elements), AE<0xE2><0x82><0x96>RE 2-x-a REx EU a Si 1-y O 4-x-2y N x (AE = Sr, Ba, Ca, Mg; RE = rare earth elements), or nitrides, e.g., (La,Y)3Si6N 11 :Ce 3+ , (Ba 1-x-y Sr x Ca y )2Si5N8:Eu 2+ , (Ca 1-x-y Sr x Ba y )AlSiN3:Eu 2+ (0≦x≦1;0≦y≦1), Sr(Sr 1-x Ca x )Al2Si2N6:Eu 2+ (0≦x≦0.2), Sr(Sr 1-x Ca x )Al2Si2N6:Ce 3+ (0≦x≦0.2)SrAlSi4N7:Eu 2+ , (Ba 1-x-y Sr x Ca y )SiN2:Eu 2+ (0≦x≦1;0≦y≦1), (Ba 1-x-y Sr x Ca y )SiN2:Ce 3+ (0≦x≦1;0≦y≦1), (Sr 1-x Ca x )LiAl3N4:Eu 2+ (0≦x≦1), (Ba 1-x-y Sr x Ca y )Mg2Al2N4:Eu 2+ (0≦x≦1;0≦y≦1), (Ba 1-x-y Sr x Ca y )Mg3SiN4:Eu 2+ (0≦x≦1; 0≦y≦1).

[0020] The conversion element converts electromagnetic radiation in at least a first wavelength range into electromagnetic radiation in a second wavelength range. Unlike the first wavelength range, the second wavelength range preferably includes wavelengths higher than those in the first wavelength range. In other words, high wavelength is synonymous with long wavelength.

[0021] According to a further embodiment, the filter element has high transmittance to radiation in the first wavelength range compared to radiation with higher wavelengths. The filter element is, for example, a material with high absorption in a wavelength range higher than the first wavelength range. High wavelengths refer to wavelengths greater than the first wavelength range, for example, wavelengths greater than 520 nm. In other words, the filter element has high transmittance to electromagnetic radiation in the wavelength range of blue and blue-green light. For example, the filter element has high transmittance to electromagnetic radiation in the wavelength range of 520 nm or less. The filter element also has low transmittance to electromagnetic radiation from the green-yellow wavelength range and to longer wavelength light. For example, the filter element has low transmittance in the visible spectrum region, for example, in the wavelength range of 520 nm to 800 nm. In other words, the filter element has low transmittance to blue and blue-green light, for example, λ≦λ grenz (λ grenz It has high transmittance to 520nm. In addition, the filter element has high transmittance to light with wavelengths above green-yellow in the visible spectrum, for example, λ grenz <λ≦800nm(λ grenz It has low transmittance at 520nm.

[0022] Absorption characteristics and λ grenz The precise selection can be adjusted to suit the intended application. λ grenz The larger the value of λ, the smaller the color point shift compared to an optoelectronic device without a filter. grenz At its minimum value, the color point shift is considerably larger compared to an unfiltered optoelectronic device. However, in principle, much of the desired target emission is filtered out and removed, which can negatively impact the overall efficiency of the device.

[0023] Such filter elements can also be called short-pass filters. For this application, all technically established concepts for filter elements can be envisioned, including, for example, filter elements based on the principle of absorption, or interference filters.

[0024] In addition to absorbing electromagnetic radiation, filter elements can also exhibit, for example, emission of electromagnetic radiation.

[0025] According to one embodiment, the optoelectronic semiconductor device includes a semiconductor chip that emits electromagnetic radiation in a first wavelength range from a radiation outlet surface during operation, and a color setting structure comprising a matrix material, a conversion element, and a filter element, wherein the conversion element converts electromagnetic radiation in at least the first wavelength range into electromagnetic radiation in a second wavelength range, and the filter element has a transmittance to electromagnetic radiation in the first wavelength range that is higher than the transmittance to electromagnetic radiation of higher wavelengths.

[0026] In a further embodiment, the filter element is formed of a plurality of particles. The plurality of particles preferably have a diameter of at least 1 nm to a maximum of 100 μm, and more preferably at least 1 nm and 30 μm or less. The filter element can be made into a plurality of particles, preferably a powder, by a grinding process.

[0027] It is preferable that the multiple particles are embedded in the matrix material on which the conversion element is located.

[0028] In a further embodiment, the optoelectronic semiconductor device has a filter element formed by a plate. “Plate” means, for example, that the filter element is formed without interruption. The plate is preferably composed of filter elements. The plate is positioned, for example, downstream of a matrix material containing conversion elements. The plate is preferably in direct contact with the matrix material.

[0029] According to a preferred embodiment, the filter element is made of filter glass, BaCuSi4O 10 (Sr,Ba,Ca)CuSi4O 10The blue pigment is selected from the group of blue pigments, or from the group consisting of combinations thereof. The filter glass is preferably constructed like glass with additional elements added to adjust its absorption properties. The glass structure may be silicate glass, borosilicate glass, or soda-lime glass. The absorption properties may be adjusted by adding a small amount of metal oxide. For example, the filter glass may contain transition metals such as Fe, Cu, Ni, Zn, Co, Cr, and Mn. In addition, filter glass colored with Co and / or Cu has suitable absorption properties and can be used as filter glass. For example, the filter glass may be soda-lime silica glass colored with cobalt oxide, or soda-lime silica glass colored with copper.

[0030] Filter element BaCuSi4O 10 It is preferable to convert electromagnetic radiation in the first wavelength range and / or the second wavelength range to electromagnetic radiation in the third wavelength range. Advantageously, since the electromagnetic radiation in the third wavelength range is invisible or barely visible to the human eye, it does not affect, or has little effect on, the color impression of the optoelectronic device. In particular, the emission in the third wavelength range can be in the near-infrared spectral region. Filter element BaCuSi4O 10 In addition to advantageous absorption, it is preferable that it exhibits fluorescence. Filter element BaCuSi4O 10 After excitation, it emits light in the near-infrared spectral region due to absorbed electromagnetic radiation. This property is technically advantageous compared to a pure absorption process. Due to emission in the third wavelength range, a portion of the absorbed energy is radiated from the optoelectronic semiconductor device. Compared to a pure absorption process, less heat is generated in the color setting structure. This results in an optoelectronic semiconductor device with reduced operating temperature, which can have a favorable impact on the device's efficiency and long-term stability. Filter element BaCuSi4O 10 Because its emission is in the near-infrared spectral region, it is invisible to the human eye, or only very faintly visible. In other words, the filter element BaCuSi4O 10The light emission of does not affect, or only affects very slightly, the color impression of the optoelectronic semiconductor device.

[0031] In a further embodiment, the color setting structure comprises a matrix material, a conversion element, a plate, and a plurality of particles, wherein the plate and the plurality of particles constitute a filter element.

[0032] In a further embodiment, the conversion element has the chemical formula (Y,Gd,Lu,Tb)₃(Al,Ga)₅O 12 :Ce comprises or consists of phosphor particles containing the above. The phosphor particles are preferably embedded in the matrix material. The diameter of the phosphor particles is preferably 1 µm or more and 70 µm or less, and particularly preferably 3 µm or more and 50 µm or less.

[0033] In one embodiment, the phosphor particles have the chemical formula (Lu 1-x Ce x )(Al 1-y Ga y )₅O 12 wherein 0 < x ≤ 0.02 and 0.3 ≤ y ≤ 0.6. Preferably, the phosphor particles have the chemical formula (Lu 1-x Ce x )(Al 1-y Ga y )₅O 12 wherein 0 < x ≤ 0.01 and 0.35 ≤ y ≤ 0.55. Most preferably, the phosphor particles have the chemical formula (Lu 1-x Ce x )(Al 1-y Ga y )₅O 12 wherein 0 < x ≤ 0.01 and 0.4 ≤ y ≤ 0.5.

[0034] When excited by blue light, such phosphor particles exhibit blue-green light emission in the emission spectrum and exhibit very high conversion efficiency. These phosphor particles have a relatively large full-width at half-maximum of light emission. Therefore, the phosphor particles are combined with a filter element that absorbs unnecessary portions of radiation, particularly long-wavelength portions. The resulting spectrum reaches a target color point that cannot be achieved without the filter element.

[0035] In a further embodiment, the filter element converts at least a portion of the electromagnetic radiation in the first wavelength range and / or the electromagnetic radiation in the second wavelength range into electromagnetic radiation in the third wavelength range. Preferably, the filter element converts at least a portion of the electromagnetic radiation in the second wavelength range into electromagnetic radiation in the third wavelength range.

[0036] In a further embodiment, the electromagnetic radiation in the third wavelength range lies in the infrared spectral region. Advantageously, since the electromagnetic radiation in the third wavelength range is invisible or barely visible to the human eye, it does not affect, or has little effect on, the color impression of the optoelectronic device. This property is technically advantageous compared to a pure absorption process. Due to the emission in the third wavelength range, some of the absorbed energy is radiated outward from the optoelectronic semiconductor device. Compared to a pure absorption process, less heat is generated in the filter element and / or color setting structure. This results in an optoelectronic semiconductor device with reduced operating temperature, which can have a favorable impact on the device's efficiency and long-term stability.

[0037] In further embodiments, the filter elements and conversion elements are uniformly dispersed within the matrix material. The quantity and configuration of the conversion elements and filter elements are adjusted so that the mixed radiation emitted by the optoelectronic semiconductor device corresponds to a desired target color point. Preferably, the conversion elements and filter elements are uniformly dispersed throughout the matrix material. Preferably, the color setting structure is located in a cavity. The color setting structure surrounds the semiconductor chip in at least five directions. That is, the semiconductor chip is located in a housing or carrier element, and preferably all other surfaces of the semiconductor chip are in contact with the color setting structure.

[0038] In further embodiments, the conversion element is deposited at the bottom of the matrix material, and the filter element is uniformly dispersed within the matrix material. In other words, the conversion element is at the bottom of the cavity, and the filter element is positioned above the conversion element. Preferably, the conversion element is positioned at the emission exit surface of the semiconductor chip and at the bottom of the cavity. This means that the filter element can convert electromagnetic radiation in the first wavelength range and a portion of electromagnetic radiation in the second wavelength range into electromagnetic radiation in the third wavelength range, and / or absorb unwanted portions of the electromagnetic radiation, particularly long wavelength portions. The filter element and the conversion element are embedded in the same matrix material.

[0039] In a further embodiment, the conversion element and the filter element are settled at the bottom, with the filter element positioned downstream of the conversion element. For example, the conversion element is settled first in the matrix material, and then the filter element is settled such that the conversion element is positioned on the emission outlet surface of the semiconductor chip and the filter element is positioned above the conversion element. The filter element and the conversion element are embedded in the same matrix material.

[0040] Advantageously, with this arrangement, the conversion element can convert electromagnetic radiation in the first wavelength range to electromagnetic radiation in the second wavelength range, and the filter element can preferably convert electromagnetic radiation in the second wavelength range to electromagnetic radiation in the third wavelength range.

[0041] In a further embodiment, the conversion elements are uniformly dispersed within the matrix material, and the filter elements are arranged as plates downstream of the conversion elements and the matrix material. This allows the conversion elements to preferably convert electromagnetic radiation in the first wavelength range to electromagnetic radiation in the second wavelength range, and the filter elements to convert electromagnetic radiation in the second wavelength range to electromagnetic radiation in the third wavelength range. For example, the plates are arranged to seal the cavity. Therefore, the filter elements must convert, transmit, or absorb all electromagnetic radiation in the second and first wavelength ranges.

[0042] In a further embodiment, the conversion element settles at the bottom, and the filter element is positioned as a plate downstream of the conversion element and matrix material.

[0043] In a further embodiment, the filter element has a transmittance of more than 50% in the wavelength range of 350 nm to 480 nm. In other words, the filter element transmits a portion of the electromagnetic radiation in the 350 nm to 480 nm wavelength range. For example, the filter element transmits a portion, at least 50%, of the electromagnetic radiation from the blue wavelength range of the semiconductor chip.

[0044] In a further embodiment, the filter element has a transmittance of less than 50% in the wavelength range of 590 nm to 650 nm. Preferably, in the wavelength range of 590 nm to 650 nm, the filter element absorbs at least the majority, or at least 50%, of the electromagnetic radiation.

[0045] In further embodiments, a semiconductor chip and a color setting structure are arranged in a cavity. The semiconductor chip is preferably arranged in a carrier element or housing. For example, the semiconductor chip is in direct contact with the carrier element or housing and the color setting structure in the cavity. The cavity is formed, for example, by a housing. The semiconductor chip is in contact via bonding wires.

[0046] According to a preferred embodiment, the second wavelength range comprises a short-wavelength portion and a long-wavelength portion, and the filter element has a higher transmittance to the radiation of the short-wavelength portion than to the radiation of the long-wavelength portion. The short-wavelength portion of the second wavelength range is particularly in the range of 430 nm to 550 nm. Preferably, the short-wavelength portion of the second wavelength range is in the range of 480 nm to 520 nm. The long-wavelength portion of the second wavelength range is particularly in the range of 480 nm to 700 nm. Preferably, the long-wavelength portion of the second wavelength range is in the range of 500 nm to 6300 nm.

[0047] Optoelectronic semiconductor devices can be manufactured using the method described below. Features and embodiments implemented only in relation to semiconductor devices are also applicable to the method, and vice versa.

[0048] According to one embodiment of a method for manufacturing optoelectronic semiconductor devices, first, a semiconductor chip is provided that emits electromagnetic radiation in a first wavelength range from a radiation outlet surface during operation.

[0049] According to one embodiment of the method, a color setting structure is provided comprising a conversion element that converts electromagnetic radiation in at least a first wavelength range into electromagnetic radiation in a second wavelength range, a filter element having a higher transmittance for radiation in the first wavelength range compared to radiation of higher wavelengths, and a matrix material. The color setting structure is preferably positioned in direct contact with the radiation outlet surface of the semiconductor chip. Alternatively, the color setting structure surrounds the side surface and the radiation outlet surface of the semiconductor chip.

[0050] According to a preferred embodiment of the method, the conversion element is introduced into the matrix material, precipitated, and placed at the bottom.

[0051] According to yet another embodiment of the method, the conversion element comprises phosphor particles embedded in a matrix material. The matrix material is preferably in a liquid state in the initial stage. The phosphor particles are preferably precipitated in the liquid state of the matrix material.

[0052] In the sedimentation method, the surface to be coated is usually placed in a container filled with a matrix material containing a conversion element and / or a filter element. The conversion element and / or filter element then settle onto the surface to be coated by gravity. Sedimentation can also be accelerated by centrifugal force. Diluting the matrix material also usually accelerates the sedimentation method. It is preferable to harden the matrix after the conversion element and / or filter element have settled.

[0053] A characteristic of the color setting structure applied by the sedimentation method is that all surfaces on which the transforming elements and / or filtering elements can settle due to gravity are covered with the transforming elements and / or filtering elements. Furthermore, the transforming elements or filtering elements of the settled color setting structure are usually in direct contact with each other.

[0054] One concept for this semiconductor device is to provide a semiconductor device that emits electromagnetic radiation with low to moderate saturation in the blue-green or cyan spectral region.

[0055] For these applications, narrow-band blue-green chlorosilicate phosphors with the chemical formula Ca8Mg(SiO4)4Cl2:Eu, or blue-green silicon phosphors with the chemical formula BaSi2O2N2:Eu, are currently used. These phosphors are usually used alone or in combination with other phosphors such as yellow-green garnet phosphors. However, because the phosphor emission of garnet materials has limited fitness and a relatively large full width at half maximum, this method cannot reach all of the desired color spots. In these cases, it is necessary to mix blue-green phosphors such as chlorosilicates or silicon phosphors, as described above, to reach the target color spot. The blue-green chlorosilicate phosphors currently in use may have the following limitations, for example. • Intrinsic instability to water leads to aging in LEDs operating continuously. • The stability limit at high radiation density leads to aging in continuously operating LEDs. • The halogen-containing host structure poses a corrosion risk to other components of the LED package, such as interactions with silver lead frames. • Significant temperature extinction characteristics, i.e., a rapid decrease in efficiency and large chromaticity changes when the device temperature rises during operation. • Significant quenching effect (droop) under high current density.

[0056] Devices containing SiON phosphors may have the following weaknesses or disadvantages: • A strong stability limit at high radiation density leads to aging in LEDs operating continuously. • Significant quenching effect (droop) under high current density.

[0057] The optoelectronic semiconductor devices described herein offer a novel approach to achieving target colors that were previously unattainable by using a conversion element combined with a selective filter element adapted to the semiconductor chip and conversion element. The conversion element exhibits an emission spectrum excited by blue light in blue-green emission and has high conversion efficiency. The filter element can absorb unwanted portions of electromagnetic radiation, particularly the long-wavelength portion. The resulting spectrum reaches a target color point that would be unattainable without the filter element.

[0058] The optoelectronic semiconductor chips described herein exhibit advantageous high stability over time and conversion efficiency, particularly in operation under high temperatures, radiation exposure, and high power density conditions.

[0059] Furthermore, the optoelectronic semiconductor devices described herein exhibit minimal shift in color points with changes in temperature and current. Additionally, the semiconductor devices are suitable for high-power-density components due to their low quenching effect. For example, Ce 3+ In phosphorescent particles doped with [a specific substance], a downward shift of the color point occurs with changes in temperature and current.

[0060] Furthermore, from the exemplary embodiments shown below in relation to the drawings, further advantageous embodiments and other embodiments of semiconductor devices and methods can be obtained. [Brief explanation of the drawing]

[0061] [Figure 1] Schematic cross-sectional views of each optoelectronic semiconductor device according to the embodiment are shown. [Figure 2] Schematic cross-sectional views of each optoelectronic semiconductor device according to the embodiment are shown. [Figure 3]Schematic cross-sectional views of each optoelectronic semiconductor device according to the embodiment are shown. [Figure 4] Schematic cross-sectional views of each optoelectronic semiconductor device according to the embodiment are shown. [Figure 5] Schematic cross-sectional views of each optoelectronic semiconductor device according to the embodiment are shown. [Figure 6] The resulting color points of the optoelectronic semiconductor device V1_F according to the embodiment are shown, compared with the resulting color points of two comparative optoelectronic semiconductor devices V1 and V2. [Figure 7] The transmission spectra of two filter elements, BG40 and BaCuSi4O10, are shown. [Figure 8] The resulting color points of the optoelectronic semiconductor device according to the embodiment are shown in comparison with the resulting color points of the comparative optoelectronic semiconductor device V1. [Figure 9] The resulting color points of the optoelectronic semiconductor device according to the embodiment are shown in comparison with the resulting color points of the comparative optoelectronic semiconductor device V1. [Figure 10] The emission spectrum of the optoelectronic semiconductor device according to the embodiment is shown. [Figure 11] The emission spectrum of the optoelectronic semiconductor device according to the embodiment is shown. [Figure 12] A schematic division diagram of the manufacturing method of an optoelectronic semiconductor device according to the embodiment is shown. [Modes for carrying out the invention]

[0062] In drawings, identical, similar, or equivalent elements are denoted by the same reference numeral. Numerical values ​​and proportions of illustrated elements are not considered to be to actual size. Rather, individual elements, particularly layer thicknesses, may be exaggerated and shown larger for better representation and / or understanding.

[0063] The optoelectronic semiconductor device 1 according to the embodiment shown in Figures 1 to 5 comprises a semiconductor chip 2 that emits electromagnetic radiation in a first wavelength range from a radiation exit surface 3 during operation. Furthermore, the optoelectronic semiconductor device 1 comprises a color setting structure 4 including a matrix material 5, a conversion element 6, and a filter element 7. The conversion element 6 converts electromagnetic radiation in at least the first wavelength range into electromagnetic radiation in the second wavelength range, and the filter element 7 has a higher transmittance for radiation in the first wavelength range than for radiation with longer wavelengths. The semiconductor chip 2 preferably emits electromagnetic radiation in the first wavelength range from the blue wavelength range. The filter element 7 is configured to absorb a portion of the electromagnetic radiation, particularly in the long wavelength range. For example, the filter element 7 converts at least a portion of the electromagnetic radiation in the first wavelength range and / or the electromagnetic radiation in the second wavelength range into electromagnetic radiation in the third wavelength range. Electromagnetic radiation in the third wavelength range is in the infrared spectral region.

[0064] The proportions and configuration of the conversion element 6 and the filter element 7 are set so that the electromagnetic radiation emitted from the optoelectronic semiconductor device 1 in a mixed manner corresponds to a desired color point, preferably in the wavelength range of blue-green or cyan. The conversion element 6 has the chemical formula (Lu 1-x Ce x )(Al 1-y Ga y )5O 12 It comprises or consists of phosphor particles having 0 <x≦0.02、0.3≦y≦0.6である。

[0065] In Figures 1 to 5, the semiconductor chip 2 and the color setting structure 4 are arranged within a housing 8 having a cavity 9. Absorption filter elements can be used in these configurations. The semiconductor chip 2 is connected by bonding wires 10.

[0066] In Figures 1 to 3, the filter element 7 is formed from multiple particles, and in Figures 4 and 5, the filter element 7 is formed from a plate. The filter element 7 is made of filter glass and BaCuSi4O 10It is selected from the group. If the filter element 7 is filter glass, the filter glass can be powdered by the crushing process.

[0067] In Figure 1, the filter element 7 and the conversion element 6 are uniformly dispersed within the matrix material 5. The filter element 7 is formed from multiple particles.

[0068] In Figure 2, the conversion element 6 is settled at the bottom of the matrix material 5, and the filter element 7 is uniformly dispersed within the matrix material 5. "At the bottom" means that the radiation outlet surface 3 of the semiconductor chip 2 is at least partially covered by the conversion element 6, and the bottom surface of the housing 8 is also at least partially covered by the conversion element 6.

[0069] Figure 3 shows the conversion element 6 and filter element 7 settled at the bottom, with the filter element 7 positioned downstream of the conversion element 6. Advantageously, the filter element 7 can easily convert electromagnetic radiation in the second wavelength range to electromagnetic radiation in the third wavelength range.

[0070] In Figure 4, the conversion elements 6 are uniformly dispersed within the matrix material 5, and the filter elements 7 are positioned as a plate downstream of the conversion elements 6 and the matrix material 5. The plate seals the housing 8. The plate is in direct contact with the matrix material 5. The plate defines the boundary of the semiconductor device 1 from above and the boundary of the housing 8 from below. The filter elements 7 are preferably filter glass, and Schott's filter glass BG40 is preferred.

[0071] In Figure 5, the conversion element 6 is settled at the bottom, and the filter element 7 is positioned as a plate downstream of the conversion element 6 and the matrix material 5. The plate seals the housing 8. The plate is in direct contact with the matrix material 5. The plate defines the boundary of the semiconductor device 1 from above and the boundary of the housing 8 from below. The filter element 7 is preferably a filter glass, and Schott's filter glass BG40 is preferred. The configurations shown in Figures 4 and 5 are advantageous for interference filter element applications.

[0072] Figure 6 shows a comparison of the resulting color points of two comparative optoelectronic semiconductor devices V1 and V2 with the resulting color points of optoelectronic semiconductor device 1 according to one embodiment. Figure 6 also shows three binning methods for cyan-emitting on-demand LEDs. Figure 6 shows the color points of the first blue (FB), second blue (SB), and third blue (TB) LEDs.

[0073] Figure 6 plots the color coordinate CIE-y against the color coordinate CIE-x. Optoelectronic semiconductor devices V1 and V2 comprise a blue semiconductor chip 2, a conversion element 6, and a matrix material 5, but do not have a filter element 7. The conversion element 6 is uniformly dispersed within the matrix material 5. The conversion element 6 is (Lu 1-x Ce x )(Al 1-y Ga y )5O 12 The device comprises garnet phosphor particles of a certain type, where x=0.005 and y=0.4 in V1, and x=0.005 and y=0.5 in V2. The matrix material 5 is silicon. The weight of the phosphor particles varies from 0% to 60% in weight percentage relative to the conversion element 6.

[0074] The garnet phosphor used in optoelectronic semiconductor device V2 represents a near-limit case where high conversion efficiency can be achieved with this phosphor material system, and the color points obtained in optoelectronic semiconductor device V1 are shifted toward higher wavelength emission. By further reducing the Ga content y and / or further increasing the Ce content x in the garnet phosphor, the phosphor emission can be shifted even further toward higher wavelength emission. This makes it possible to access color points located to the right of the conversion line shown in the CIE-x / y diagram, for example, color points where CIE-x is higher for the same CIE-y pair, or where CIE-y is lower for the same CIE-x pair.

[0075] On the other hand, to obtain a shift toward even shorter wavelength emission compared to the color points obtained with optoelectronic semiconductor devices V2 and V1, it is necessary to further increase the Ga content y in the phosphor particles and / or further decrease the Ce content x. Both methods are subject to significant technical constraints. Increasing the parameter y significantly reduces quantum efficiency and conversion efficiency, especially at high operating temperatures and low element brightness. Decreasing x significantly reduces absorptivity and conversion efficiency, increases phosphor consumption, and decreases element brightness.

[0076] From Figure 6, further, (Lu 1-x Ce x )(Al 1-y Ga y )5O 12 It is evident that the phosphors in the system alone cannot achieve all the desired target color points. In particular, the third blue TB bin, like a portion of the second blue SB bin, is either inaccessible or only accessible to a limited extent.

[0077] Figure 6 further shows the curve V1_F. The colored dots are obtained by the optoelectronic semiconductor device 1 according to one embodiment. Here, the optoelectronic semiconductor device 1 comprises a semiconductor chip 2, a filter element 7, a matrix material 5, and a conversion element 6. The filter element 7 is, for example, filter glass, BaCuSi4O10 , or a combination thereof, and the conversion element 6 is (Lu 1-x Ce x )(Al 1-y Ga y )5O 12 Therefore, x=0.005 and y=0.4. One of the above-described configurations shown in Figures 1 to 5 is used. Surprisingly, it is shown that the light emission from optoelectronic semiconductor device 1, shown by curve V1_F, can reach the region outside the third blue TB bin and the second blue SB bin. Furthermore, curve V1_F is shifted toward short-wavelength emission.

[0078] Figure 7 plots the transmittance against wavelength λ in nanometers. It shows the transmission spectra of two filter elements, F1 and F2, where F1 is Schott's BG40 and F2 is BaCuSi4O. 10 The F1 data was obtained from the FSR-BG40 bandpass spectrum, and the F2 data was estimated from the diffuse reflectance measurement of the powder sample, with reflectance being approximated as transmittance. The F1 spectrum shows maximum transmittance between 430nm and 550nm, and the F2 spectrum shows maximum transmittance between 380nm and 450nm.

[0079] Figures 8 and 9 show the resulting color points of optoelectronic semiconductor device 1 according to one embodiment, in comparison with the resulting color points of a comparative optoelectronic semiconductor device V1. The color coordinate CIE-y is plotted against the color coordinate CIE-x. Figures 8 and 9 also show the color points of the first blue FB, second blue SB, and third blue TB bins.

[0080] Figure 8 shows a semiconductor chip 2, a matrix material 5, and phosphor particles (Lu) with x=0.005 and y=0.4, respectively, according to the embodiment. 1-x Ce x )(Al 1-y Ga y )5O 12 A conversion element 6 is provided with a filter element 7BaCuSi4O 10The following are three curves F2-1, F2-0.5, and F2-0.1 obtained by an optoelectronic semiconductor device 1 comprising the above. The filter index is varied in the range of 0.1 to 1. The phosphor particle content is preferably 30%.

[0081] Figure 9 shows a semiconductor chip 2, a matrix material 5, and phosphor particles (Lu) with x=0.005 and y=0.4, respectively, according to the embodiment. 1-x Ce x )(Al 1-y Ga y )5O 12 The following four curves F1-2, F1-1, F1-0.5, and F1-0.1 are shown, obtained by an optoelectronic semiconductor device 1 comprising a conversion element and a filter element 7BG40. The filter index is varied in the range of 0.1 to 2. A phosphor particle content of 30% is preferred.

[0082] The curves F2-1, F2-0.5, F2-0.1, F1-2, F1-1, F1-0.5, and F1-0.1 in Figures 8 and 9 are simulations. The curves were obtained according to the procedure described below. The emission spectrum of the comparative optoelectronic semiconductor device V1 shown in Figure 6 was used as the starting point. Three different concentrations of the luminescent particle matrix material 5 were used. Subsequently, the emission spectra of the three different concentrations of phosphor particles were multiplied by the filter transmittance graphs F1 and F2 in Figure 7. An exponent was applied to the filter curve to simulate variations in the amount of filter element 7 and filter thickness. This procedure was performed for each wavelength λ of the emission spectrum. Here, the following equation is used. λ_filtered=λ_unfiltered×transmission (λ) filter exponent

[0083] Figures 8 and 9 show that as the filter index increases, the emission shifts to shorter wavelengths compared to the color point of the comparative optoelectronic semiconductor device V1.

[0084] Figures 10 and 11 show emission spectra plotted with respect to wavelength λ. Figure 10 shows emission spectrum F1_1 obtained by a semiconductor device 1 with a filter index of 1, using BG40 as the filter element 7 according to the embodiment. The conversion element 6 is (Lu) at x=0.005, y=0.4. 1-x Ce x )(Al 1-y Ga y )5O 12 It is equipped with.

[0085] Figure 11 shows that BaCuSi4O is used as the filter element 7. 10 The emission spectrum F2_0.5 obtained by semiconductor device 1 with a filter index of 0.5 is shown. The conversion element 6 is (Lu) at x=0.005, y=0.4. 1-x Ce x )(Al 1-y Ga y )5O 12 It is equipped with.

[0086] Further comparative emission spectra V1 in Figures 10 and 11 are obtained by a semiconductor device 1 comprising a semiconductor chip 2, a conversion element 6, and a matrix material 5, but without a filter element 7. The comparative emission spectrum V1 is obtained by a conversion element 6 (Lu) with x=0.005 and y=0.4. 1-x Ce x )(Al 1-y Ga y )5O 12 This is obtained by a semiconductor device 1 having the following characteristics. The content of the conversion element 6 in the matrix material 5 of the semiconductor device 1 is 30%.

[0087] When using the filter element 7, it can be seen that the light emission from the optoelectronic semiconductor device 1 decreases in the wavelength range of 450 to 630.

[0088] Figure 12 shows an exemplary embodiment of a method for manufacturing an optoelectronic device 1 having method steps S1 to S2.

[0089] In the first method step S1, a semiconductor chip 2 is provided that emits electromagnetic radiation in a first wavelength range from a radiation outlet surface 3 during operation. The semiconductor chip 2 is placed in a housing 8.

[0090] In step S2 of the method, a color setting structure 4 is provided, comprising a conversion element 6 that converts electromagnetic radiation in at least a first wavelength range to electromagnetic radiation in a second wavelength range, a filter element 7 that has a higher transmittance to radiation in the first wavelength range compared to radiation of higher wavelengths, and a matrix material 5. The color setting structure 4 is placed in a cavity 9. For example, the conversion element 6 is introduced into the matrix material 5, precipitated, and placed at the bottom. Similarly, the filter element 7 is precipitated into the matrix material 5 and placed downstream of the conversion element 6. The filter element 7 can be added as particles or as plates.

[0091] The features and embodiments described with respect to the drawings can be combined with each other in further embodiments, even if not explicitly described for all combinations. Furthermore, the embodiments described with respect to the drawings may have additional features based on the general description, either alternatively or additionally.

[0092] The present invention is not limited to the embodiments described herein. Rather, the present invention encompasses all novel features and combinations of features, including any combination of the features described in the claims, even if the feature or combination itself is not expressly described in the claims or embodiments.

[0093] This application claims priority to German Patent Application No. 102023123733.0, the disclosures of which are incorporated by reference into this specification. [Explanation of Symbols]

[0094] 1. Semiconductor devices 2 Semiconductor chips 3 Radiation exit surface 4-color setting structure 5 Matrix Materials 6 Conversion elements 7 Filter elements 8 Housing 9 Cavity 10 Bonding wires FB First Blue TB Third Blue SB's second blue V1 Comparative Optoelectronic Semiconductor Device 1 V2 Comparative Optoelectronic Semiconductor Device 2 V1_F Optoelectronic semiconductor device with filter element Transmission spectrum of F1 filter element BG40 F2 filter element BaCuSi4O 10 Transmission spectrum F2-0.1 Semiconductor device with filter element F2 and filter index 0.1 F2-0.5 Filter Element F2 and Filter Index 0.5 Semiconductor Device F2-1 Semiconductor device 1 of filter element F2 and filter index 1 F1-0.1 Filter element F1 and filter index 0.1 semiconductor device F1-0.5 Filter Element F1 and Filter Index 0.5 Semiconductor Device F1-1 Semiconductor device with filter element F1 and filter index 1 F1-2 Semiconductor device of filter element F1 and filter index 2 E emission Emission spectrum of a semiconductor device with filter element F1 and filter index 1. Emission spectrum of a semiconductor device with filter element F2 and filter index 0.5. S1 Method Step 1 S2 Method Step 2 CIE-x color coordinates CIE-y color coordinates

Claims

1. During operation, a semiconductor chip (2) emits electromagnetic radiation in the first wavelength range from its radiation outlet surface (3), A color setting structure (4) comprising a matrix material (5), a conversion element (6), and a filter element (7), An optoelectronic semiconductor device (1) comprising, The conversion element (6) converts electromagnetic radiation in at least the first wavelength range into electromagnetic radiation in the second wavelength range, The filter element (7) has a higher transmittance for radiation in the first wavelength range compared to radiation of longer wavelengths. The filter element (7) converts at least a portion of the electromagnetic radiation in the first wavelength range and / or the electromagnetic radiation in the second wavelength range into electromagnetic radiation in the third wavelength range. Optoelectronic semiconductor device (1).

2. The filter element (7) is formed of a plurality of particles. The optoelectronic semiconductor device (1) according to claim 1.

3. The filter element (7) is formed by a plate. The optoelectronic semiconductor device (1) according to claim 1 or 2.

4. The filter element (7) is made of filter glass, BaCuSi ４ O １０ , (Sr,Ba,Ca)CuSi ４ O １０ , selected from the group consisting of blue pigments or combinations thereof, The optoelectronic semiconductor device (1) according to any one of claims 1 to 3.

5. The aforementioned conversion element (6) has the chemical formula (Y, Gd, Lu, Tb) ３ (Al, Ga) ５ O １２ : comprising phosphor particles containing Ce, or consisting of the said phosphor particles, The optoelectronic semiconductor device (1) according to any one of claims 1 to 4.

6. The phosphor particles have the chemical formula (Lu １－ｘ Ce ｘ )(Al １－ｙ Ga ｙ ) ５ O １２ , where 0 < x ≤ 0.02 and 0.3 ≤ y ≤ 0.6, The optoelectronic semiconductor device (1) according to claim 5.

7. The electromagnetic radiation in the third wavelength range is in the infrared spectral region. The optoelectronic semiconductor device (1) according to any one of claims 1 to 6.

8. The filter element (7) and the conversion element (6) are uniformly dispersed within the matrix material (5). The optoelectronic semiconductor device (1) according to any one of claims 1 to 7.

9. The conversion element (6) settles at the bottom of the matrix material (5), and the filter element (7) is uniformly dispersed within the matrix material (5). The optoelectronic semiconductor device (1) according to any one of claims 1 to 8.

10. The conversion element (6) and the filter element (7) settle at the bottom, and the filter element (7) is positioned downstream of the conversion element (6). The optoelectronic semiconductor device (1) according to any one of claims 1 to 9.

11. The conversion element (6) is uniformly dispersed within the matrix material (5), and the filter element (7) is arranged as a plate downstream of the conversion element (6) and the matrix material (5). The optoelectronic semiconductor device (1) according to any one of claims 1 to 10.

12. The conversion element (6) settles at the bottom, and the filter element (7) is positioned as a plate downstream of the conversion element (6) and the matrix material (5). The optoelectronic semiconductor device (1) according to any one of claims 1 to 11.

13. The filter element (7) has a transmittance of more than 50% in the wavelength range between 350 nm and 480 nm. The optoelectronic semiconductor device (1) according to any one of claims 1 to 12.

14. The filter element (7) has a transmittance of less than 50% in the wavelength range between 590 nm and 650 nm. The optoelectronic semiconductor device (1) according to any one of claims 1 to 13.

15. The semiconductor chip (2) and the color setting structure (4) are arranged within the cavity (9). The optoelectronic semiconductor device (1) according to any one of claims 1 to 14.

16. The aforementioned second wavelength region includes a short wavelength portion and a long wavelength portion. The filter element (7) has a higher transmittance for the radiation in the short wavelength region compared to the radiation in the long wavelength region. The optoelectronic semiconductor device (1) according to any one of claims 1 to 15.

17. The steps include providing a semiconductor chip (2) that emits electromagnetic radiation in the first wavelength range from a radiation outlet surface (3) during operation, The steps include providing a color setting structure (4) comprising a conversion element (6), a filter element (7), and a matrix material (5), A method for manufacturing an optoelectronic semiconductor device (1) including, The conversion element (6) converts electromagnetic radiation in at least the first wavelength range into electromagnetic radiation in the second wavelength range, The filter element (7) has a higher transmittance for radiation in the first wavelength range compared to radiation of higher wavelengths. The filter element (7) converts at least a portion of the electromagnetic radiation in the first wavelength range and / or the electromagnetic radiation in the second wavelength range into electromagnetic radiation in the third wavelength range. method.

18. The conversion element (6) is introduced into the matrix material (5), settles, and is placed at the bottom. The method according to claim 17.

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