Fast adiabatic passage of phonons

Abstract

A method is provided for laser cooling an object crystal comprising at least two atomic objects and confined by a confinement device. A control device controls one or more manipulators to cause a first example of an manipulator signal to be incident on the object crystal at a target location at least partially determined by the confinement device. The manipulator signal is configured to laser cool a first mode of motion of the object crystal. The control device induces an adiabatic transfer of phonons from a second mode of motion of the object crystal to the first mode of motion of the object crystal. The control device controls one or more manipulators to cause a second example of an manipulator signal to be incident on the object crystal at a target location. The manipulator signal is configured to laser cool a first mode of motion of the object crystal.

Description

[Technical Field]

[0001] Cross-references to related applications This application claims priority to U.S. Patent Application No. 18 / 754,787, filed on June 26, 2024, which in turn claims priority to U.S. Patent Application No. 63 / 589,433, filed on October 11, 2023, and U.S. Patent Application No. 63 / 513,379, filed on July 13, 2023, the contents of which those patent applications are incorporated herein by reference in their entirety.

[0002] Various embodiments relate to the laser cooling of atomic objects confined by atomic object confinement devices. For example, various embodiments relate to increasing the laser cooling rate of atomic objects by phonon fast adiabatic passage. [Background technology]

[0003] In various situations, it is desirable to cool atomic objects captured by atomic object traps so that various operations can be performed on the atomic object (e.g., experiments and / or controlled quantum evolution). However, in various situations, some modes of motion of atomic objects cool very slowly, and therefore the cooling step of the atomic object occupies a considerable proportion of the execution time. It is difficult to efficiently cool all modes of motion of atomic objects. Through applied attempts, ingenuity, and innovation, many shortcomings of such laser cooling systems have been overcome by developing solutions constructed by embodiments of the present invention, many examples of which are described in detail herein. [Overview of the project] [Means for solving the problem]

[0004] Exemplary embodiments provide methods, systems, apparatus, and / or computer program products, etc., for increasing the cooling rate through the use of phonon fast adiabatic passage. For example, an object crystal comprising two or more atomic objects is confined by a confinement device. At least one of the atomic objects of the object crystal is used as a resonantly cooled atomic object. At least one of the atomic objects of the object crystal is used to store quantum information in an exemplary embodiment. The object crystal has multiple modes of motion. Some of the modes of motion of the object crystal are easier and / or faster to cool than other modes of motion. Kinetic energy can be transferred from a mode of motion that is more difficult and / or slower to cool to a mode of motion that is easier and / or faster to cool, so that laser cooling of the object crystal can be performed on a shorter timescale.

[0005] According to one embodiment, a method is provided for cooling an object crystal comprising at least two atomic objects and confined by a confinement device. In an exemplary embodiment, the method includes the steps of controlling one or more voltage sources to shorten the object crystal length and causing the object crystal to experience a coupling force that increases to a maximum amplitude and then decreases from the maximum amplitude to zero. The object crystal length is measured in a direction parallel to the radio frequency (RF) null axis, which is determined by the confinement device at the location of the object crystal. The coupling force includes at least a component in a direction that is radial with respect to the RF null axis. While the object crystal is experiencing a non-zero coupling force, the shortening of the object crystal length causes the first mode of motion to degenerate into the second mode of motion (in a situation where the coupling force is the only relevant coupling between the two modes) so that phonons are adiabatically transferred between the first mode of motion of the object crystal and the second mode of motion of the object crystal.

[0006] In exemplary embodiments, the method further includes the step of controlling one or more operating sources to perform laser cooling of a first mode of motion of the object crystal before controlling one or more voltage sources to shorten the object crystal length and cause the object crystal to experience bonding forces.

[0007] In an exemplary embodiment, the method further includes the step of controlling one or more operating sources to perform laser cooling of a first mode of motion of the object crystal after the coupling force has decreased to an amplitude of zero.

[0008] In exemplary embodiments, the method further includes the step of controlling one or more voltage sources for at least one of the following: (a) stopping the shortening in dimension of the object crystal length so that the object crystal length is maintained at the final length, or (b) increasing the object crystal length to a length greater than the final length, before controlling one or more operating sources to perform laser cooling of the first mode of motion of the object crystal after the coupling force has decreased to an amplitude of zero.

[0009] In an exemplary embodiment, one or more voltage sources and one or more operating sources are controlled to repeatedly perform (a) adiabatically transfer phonons between a first motion mode and a second motion mode, and (b) laser-cool the first motion mode.

[0010] In an exemplary embodiment, phonons are transferred adiabatically between the first and second motion modes by transferring one or more phonons from the second motion mode to an intermediate motion mode, and one or more phonons from the intermediate motion mode to the first motion mode.

[0011] In an exemplary embodiment, at least two atomic objects comprise a first atomic object of a first atomic object type and a second atomic object of a second atomic object type, wherein the first atomic object type is different from the second atomic object type.

[0012] In an exemplary embodiment, the coupling force increases to its maximum amplitude over a first time period, and decreases from its maximum amplitude to zero over a second time period, with both the first and second time periods being longer than the reciprocal of the difference between the motion mode frequency of the first motion mode and the motion mode frequency of the second motion mode.

[0013] In exemplary embodiments, the coupling force is one of the following: (a) radial compression, (b) torque caused by a shim field in a plane parallel to the plane defined by the confinement device, or (c) a higher-order (e.g., third-order, fourth-order) differential term in the potential generated by the confinement device at the location of the object crystal.

[0014] In another embodiment, a system is provided. The system comprises a confinement device configured to confine an object crystal having at least two atomic objects and defining a target location in at least part of it; one or more voltage sources operably coupled to each electrode of the confinement device; and a control device configured to control the operation of the confinement device and one or more voltage sources. The control device is configured to control the operation of the confinement device and one or more voltage sources to cause the system to confine the object crystal to the target location; to provide voltage signals supplied to each electrode that shorten the object crystal length of the object crystal; and to provide a coupling signal supplied to at least one of the electrodes that causes the object crystal to experience a coupling force that increases to a maximum amplitude and then decreases from the maximum amplitude to zero amplitude. While the object crystal is experiencing a non-zero coupling force, the shortening of the object crystal length causes the first mode of motion to degenerate into the second mode of motion so that phonons are adiabatically transferred between the first mode of motion of the object crystal and the second mode of motion of the object crystal.

[0015] In an exemplary embodiment, the system is a quantum computer.

[0016] In another embodiment, a control device is provided. The control device comprises at least one processing unit and a memory for storing computer executable instructions. The computer executable instructions are configured to cause the control device to control the operation of a confinement device and one or more voltage sources to perform the following actions when executed by the at least one processing unit: confinement of atomic objects at target locations determined at least in part by the confinement device; providing voltage signals to each electrode that shorten the object crystal length of the object crystal; and providing a coupling signal to at least one of the electrodes that causes the object crystal to experience a coupling force that increases to a maximum amplitude and then decreases from the maximum amplitude to zero. While the object crystal is experiencing a non-zero coupling force, the shortening of the object crystal length causes the first motion mode to degenerate into the second motion mode so that phonons can be adiabatically transferred between the first motion mode and the second motion mode of the object crystal.

[0017] In another embodiment, a method is provided for laser cooling an object crystal comprising at least two atomic objects and confined by a confinement device. In an exemplary embodiment, the method includes the steps of: controlling one or more operating sources to cause one or more first examples of operating signals to be incident on a target location at least partially determined by the confinement device, wherein the one or more first examples of operating signals are configured to laser cool a first mode of motion of the object crystal, and the confinement device operates to confine the object crystal at the target location; causing an adiabatic transfer of phonons from a second mode of motion of the object crystal to a first mode of motion of the object crystal; and controlling one or more operating sources to cause one or more second examples of operating signals to be incident on the target location, wherein the one or more second examples of operating signals are configured to laser cool a first mode of motion of the object crystal.

[0018] In an exemplary embodiment, adiabatic transfer of a phonon from the second motion mode to the first motion mode is implemented via phonon rapid adiabatic passage.

[0019] In an exemplary embodiment, implementing phonon rapid adiabatic passage comprises controlling one or more voltage supplies to reduce an object crystal length of an object crystal, and controlling the one or more voltage supplies to cause the object crystal to experience a coupling force that increases to a maximum amplitude and then decreases from the maximum amplitude to an amplitude of zero, wherein while the object crystal experiences a non-zero coupling force, the reduction of the object crystal length causes the first motion mode to become degenerate with the second motion mode such that the phonon is adiabatically transferred between the first motion mode of the object crystal and the second motion mode of the object crystal.

[0020] In an exemplary embodiment, the method further comprises, after the coupling force decreases to an amplitude of zero and before controlling one or more manipulation sources to cause a second instance of one or more manipulation signals to be incident on a target location, controlling the one or more voltage supplies for at least one of: (a) stopping the reduction of the object crystal length in dimension such that the object crystal length is maintained at a final length, or (b) increasing the object crystal length to a length longer than the final length.

[0021] In an exemplary embodiment, the one or more voltage supplies and the one or more manipulation sources are controlled to repeatedly perform: (a) adiabatically transferring a phonon between the first motion mode and the second motion mode, and (b) laser cooling the first motion mode.

[0022] In an exemplary embodiment, the coupling force increases to the maximum amplitude over a first length of time, the coupling force decreases from the maximum amplitude to an amplitude of zero over a second length of time, and the first length of time and the second length of time are longer than the reciprocal of a difference between a motion mode frequency of the first motion mode and a motion mode frequency of the second motion mode.

[0023] In an exemplary embodiment, phonons are transferred adiabatically between the first and second motion modes by transferring one or more phonons from the second motion mode to an intermediate motion mode, and one or more phonons from the intermediate motion mode to the first motion mode.

[0024] In an exemplary embodiment, at least two atomic objects comprise a first atomic object of a first atomic object type and a second atomic object of a second atomic object type, wherein the first atomic object type is different from the second atomic object type.

[0025] In exemplary embodiments, the adiabatic transfer of phonons takes less than 100 microseconds.

[0026] In other embodiments, a system is provided. In an exemplary embodiment, the system comprises a confinement device configured to confine an object crystal comprising at least two atomic objects and defining a target location in at least part; one or more operating sources configured to generate and provide one or more operating signals; and a control device configured to control the operation of the confinement device and one or more operating sources. The control device is configured to control the operation of the confinement device and one or more operating sources to cause the system to confine the object crystal to the target location; to inject a first example of one or more operating signals into the target location, wherein the first example of one or more operating signals is configured to laser-cool a first mode of motion of the object crystal; to induce an adiabatic transfer of phonons from a second mode of motion of the object crystal to the first mode of motion of the object crystal; and to inject a second example of one or more operating signals into the target location, wherein the second example of one or more operating signals is configured to laser-cool a first mode of motion of the object crystal.

[0027] In an exemplary embodiment, the system further comprises one or more voltage sources operably coupled to each electrode of the confinement device, and a control device is configured to control the operation of one or more voltage sources to cause the system to perform at least one of the voltage sources, which is supplied to each electrode to shorten the object crystal length of the object crystal, and which is supplied to at least one of the electrodes to cause the object crystal to experience a coupling force that increases to a maximum amplitude and then decreases from the maximum amplitude to zero, and while the object crystal is experiencing a non-zero coupling force, the shortening of the object crystal length causes the first motion mode to degenerate into the second motion mode so that phonons are adiabatically transferred between the first motion mode and the second motion mode of the object crystal.

[0028] In an exemplary embodiment, the system is a quantum computer, where at least one of at least two atomic objects of the object crystal is used as a qubit for the quantum computer, and at least the other of the at least two atomic objects of the object crystal is used to resonantly cool the qubit.

[0029] In other embodiments, a control device is provided. The control device comprises at least one processing unit and a memory for storing computer executable instructions. When executed by at least one processing unit, the computer executable instructions cause the control device to control the operation of a confinement device and one or more operating sources to confine an object crystal to a target location in the confinement device, and the control device is configured to cause the system to confine the object crystal to a target location in the confinement device, to inject one or more first examples of operating signals to the target location, wherein the one or more first examples of operating signals are configured to laser-cool a first mode of motion of the object crystal, to cause an adiabatic transfer of phonons from a second mode of motion of the object crystal to a first mode of motion of the object crystal, and to inject one or more second examples of operating signals to the target location, wherein the one or more second examples of operating signals are configured to laser-cool a first mode of motion of the object crystal.

[0030] In exemplary embodiments, the control device is further configured to control the operation of one or more voltage sources operably coupled to each electrode of the confinement device, and a computer executable instruction, when executed by at least one processing unit, is configured to cause the control device to control the operation of one or more voltage sources, causing the control device to control the operation of one or more voltage sources to cause a voltage signal supplied to each electrode to reduce the object crystal length of the object crystal, and a coupling signal supplied to at least one of the electrodes to cause the object crystal to experience a coupling force that increases to a maximum amplitude and then decreases from the maximum amplitude to zero, and while the object crystal is experiencing a non-zero coupling force, the reduction in object crystal length causes the first motion mode to degenerate into the second motion mode so that phonons are adiabatically transferred between the first motion mode and the second motion mode of the object crystal.

[0031] The present invention has been described in general terms, and the attached drawings, which are not necessarily to the same scale, are referenced here. [Brief explanation of the drawing]

[0032] [Figure 1] This is a block diagram of an exemplary atomic object quantum computer according to an exemplary embodiment. [Figure 2] This is a top view of a portion of an exemplary atomic object confinement device that may be used in exemplary embodiments. [Figure 3A] This is a schematic diagram of an object crystal confined by an exemplary atomic object confinement device according to an exemplary embodiment. [Figure 3B] This is a schematic diagram of an object crystal, confined by an exemplary atomic object confinement device according to an exemplary embodiment, and experiencing a binding force. [Figure 4] This plot shows the evolution of object crystal length and bonding force amplitude during the implementation of phonon fast adiabatic passage according to an exemplary embodiment. [Figure 5] This plot illustrates the effect of changing the object crystal length at various motion modes frequencies of the object crystal according to an exemplary embodiment. [Figure 6] This is a schematic diagram of an exemplary control device for a quantum computer, which includes an atomic object confinement device configured to confine atomic objects, according to an exemplary embodiment. [Figure 7A] This flowchart illustrates various processes and / or procedures performed by a control device to cause an atomic system and / or quantum computer to perform a cooling operation using phonon fast adiabatic passage, according to an exemplary embodiment. [Figure 7B] This flowchart illustrates various processes and / or procedures performed by a control device to cause an atomic system and / or quantum computer to carry out fast adiabatic phonon passage in an object crystal, according to an exemplary embodiment. [Figure 8] This is a schematic diagram of an exemplary computing entity of a quantum computer system that may be used according to an exemplary embodiment. [Modes for carrying out the invention]

[0033] Herein, the present invention is described more fully with reference to the accompanying drawings, which illustrate embodiments that are part of the invention but not all of it. In fact, the present invention can be carried out in many different forms and should not be construed as being limited to the embodiments described herein, but rather these embodiments are provided so as to satisfy the legal requirements to which this disclosure is applicable. The term “or” (also indicated by “ / ”) is used herein in both an alternative and a conjunctive sense unless otherwise indicated. The terms “illustrated” and “exemplary” are used to mean examples without indication of quality levels. The terms “generally” and “approximately” refer to applicable technical tolerances and / or manufacturing tolerances, and / or user measurement capabilities, unless otherwise indicated. Similar reference numerals refer to similar elements throughout.

[0034] In various situations, atomic objects are confined by atomic object confinement devices (also referred to herein as confinement devices). In various embodiments, the atomic object is an ion, an ionic molecule, or a multipolar molecule, and the atomic object confinement device is an ion trap such as a surface ion trap and / or a pole ion trap. In various embodiments, the atomic object is a neutral atom or a neutral molecule, and the atomic object confinement device is an optical trap and / or a magnetic trap, etc.

[0035] In various embodiments, the atomic objects confined by the confinement device have at least two atomic object types, where atomic objects of different atomic object types have different masses, different atomic numbers, and / or different molecular compositions. Similarly, atomic objects of the same atomic object type have the same mass, the same atomic number, and / or the same molecular composition. The atomic objects confined by the confinement device can be systematized and / or grouped into object crystals comprising at least a first atomic object of a first atomic object type (e.g., a first mass, a first number of atoms, and / or a first molecular composition) and a second atomic object of a second atomic object type (e.g., a second mass, a second number of atoms, and / or a second molecular composition), where the first atomic object with the first mass, first number of atoms, and / or first molecular composition is different from the second atomic object with the second mass, second number of atoms, and / or second molecular composition.

[0036] In exemplary embodiments, the first atomic object is configured for use in the resonant cooling of the second atomic object. For example, the second atomic object may be cooled to a desired temperature and / or state of motion by laser cooling the first atomic object. In various embodiments, the quantum state of the second atomic object is used to store quantum information. For example, in various embodiments, the quantum state of the second atomic object is manipulated to cause its controlled evolution (e.g., for atomic system experiments and / or quantum computing). For example, in exemplary embodiments, the second atomic object is used as a qubit in a quantum computer.

[0037] The motion modes of an object crystal include axial motion modes corresponding to motion along an axis defined by the confinement device, and radial motion modes corresponding to motion in a direction perpendicular to the axis defined by the confinement device. Some motion modes of an object crystal are easier and / or faster to cool (e.g., have a faster cooling rate) than others. For example, radial motion modes dominated by the motion of a second (e.g., quantum information storage) atomic object may be more difficult and / or slower to cool than axial or radial motion modes dominated by the motion of a first (e.g., resonant cooling) atomic object.

[0038] In various embodiments, phonons (e.g., quanta of vibrational mechanical energy) are transferred using a fast adiabatic transit process from a motion mode that is slower and / or more difficult to cool to a motion mode that is faster and / or easier to cool. For example, some motion modes of an object crystal have a faster cooling rate (e.g., the kinetic energy of a motion mode when it is faster to cool can be reduced more quickly than that of other motion modes of the object crystal). In other examples, some motion modes of an object crystal are technically easier to cool (e.g., using a laser of a wavelength that is technically easier to generate, or a laser of a wavelength that is easier to guide from the laser source to the location of the object crystal). Various embodiments are configured to transfer kinetic energy from a motion mode that is more difficult and / or slower to cool to a motion mode that is easier and / or faster to cool to enable easier and / or faster cooling of the object crystal.

[0039] Each motion mode of an object crystal is associated with a frequency corresponding to the vibrational frequency of that motion mode. The frequency of an object crystal's motion mode is influenced by the confinement well frequency of the potential well of the confinement device in which each object crystal is confined. In various embodiments, the frequency of a motion mode can be changed by changing the confinement well frequency corresponding to a physical process that changes the object crystal length or the spacing / distance between atomic objects. The frequencies of different motion modes of an object crystal have different functional dependencies at the confinement well frequency, such that a degeneracy of a specific confinement well frequency can be induced between different motion modes. By coupling degenerate motion modes (e.g., using coupling forces), at least some of the phonons from motion modes that are more difficult and / or slower to cool are transferred to motion modes that are easier and / or faster to cool.

[0040] Next, laser cooling may be performed to cool the more easily cooled and / or faster motion modes so as to reduce the kinetic energy of the object crystal. The process of phonon fast adiabatic transfer between one or more pairs of motion modes of the object crystal and the subsequent (laser) cooling of the more easily cooled and / or faster motion modes of the object crystal may be repeated as needed to cool the object crystal to a level suitable for the application and / or to reduce the kinetic energy of the object crystal.

[0041] In various embodiments, phonons from more difficult and / or slower motion modes of the object crystal can be converted to easier and / or faster motion modes of the object crystal through one or more intermediate motion modes of the object crystal. For example, in some situations, phonons (or kinetic energy) can be directly transferred from more difficult and / or slower motion modes of the object crystal to easier and / or faster motion modes of the object crystal through the implementation of fast adiabatic phonon passage. In other situations, phonons (or kinetic energy) can be directly transferred from more difficult and / or slower motion modes of the object crystal to easier and / or faster motion modes of the object crystal through one or more intermediate motion modes to provide a pathway from more difficult and / or slower motion modes to easier and / or faster motion modes of the object crystal.

[0042] In various embodiments, atomic objects confined by an atomic object confinement device are used to perform experiments, controlled quantum state evolution, and / or quantum computations, etc. In various embodiments, in order for atomic objects confined by an atomic object confinement device to be used to perform experiments, controlled quantum state evolution, and / or quantum computations, etc., the atomic objects need to be cold and / or cooled to near the vibrational ground state for the atomic objects and / or the object crystal of which the atomic objects are part. In various embodiments, laser cooling is used to reduce the kinetic energy of the atomic objects and / or the object crystal.

[0043] Typical types of laser cooling include Doppler cooling, resolved sideband cooling, and EIT cooling. Doppler cooling involves cooling an atomic object via broad optical transitions compared to object crystal motion transitions. The motion (persistent) frequency of the atomic object is the frequency at which the atomic object oscillates in response to the confinement potential and / or pseudopotential of the atomic object confinement device, such as those generated by applying a radio frequency voltage signal to the radio frequency electrodes and / or rails of a pole surface ion trap. EIT cooling involves applying two laser and magnetic fields to the atomic object. The laser fields are detuned from each transition of the atomic object to resonant cooling of the object crystal. Cooling occurs when stronger photon absorption occurs in the red-detuned motion sideband compared to the blue-detuned motion sideband.

[0044] However, when cooling an object crystal, each motion mode of the object crystal has a different cooling rate (for example, each motion mode has its own corresponding frequency), and the cooling rates of different motion modes can be very different. The motion of atomic objects can be divided into several motion modes that are orthogonal to each other. For example, the motion of an object crystal or object group consisting of N atomic objects can be represented by 3*N unbonded modes, and their dynamics can usually be treated independently. In various embodiments, the confinement device defines a linear confinement region, thereby the confined object crystal is a linear object crystal. In other words, the atomic objects of the object crystal are arranged in a linear configuration. Thus, the motion modes of the object crystal can be divided into N axial modes that are mainly along the direction of the crystal axis (generally aligned with the confinement axis defined by the confinement region) and 2*N radial modes that are perpendicular to the direction of the crystal axis (and / or confinement axis).

[0045] For example, axial motion modes can cool much faster than radial motion modes. However, the overall cooling time may be limited by the slowest cooling rate of all motion modes. This results in a considerable length of execution time for various atomic systems and / or quantum computers that are dedicated to cooling operations rather than quantum state evolution operations. Therefore, technical problems exist regarding laser cooling of object crystals.

[0046] Various embodiments provide technical solutions to these technical problems. For example, various embodiments adiabatically transfer kinetic energy (e.g., phonons) from one or more motion modes of an object crystal that are more difficult and / or slower to cool to one or more motion modes of an object crystal that are easier and / or faster to cool. For example, one or more implementations of fast adiabatic phonon transfer can be used to reduce the phonon population of one or more motion modes of an object crystal that are more difficult and / or slower to cool, and to correspondingly increase the phonon population of one or more motion modes of an object crystal that are easier and / or faster to cool. Thus, one or more motion modes of an object crystal that are easier and / or faster to cool can be efficiently cooled via laser cooling. The transfer of energy (phonons) from the more difficult and / or slower motion modes of an object crystal to cool to the easier and / or faster motion modes of an object crystal enables cooling of the atomic object crystal at a faster cooling rate than conventional laser cooling. This can improve the efficient cooling rate of the object crystal, and the object crystal can be cooled relatively efficiently.

[0047] Exemplary quantum computers equipped with atomic object confinement devices Laser cooling of atomic objects and / or object crystals confined by an atomic object confinement device can be performed in a wide variety of situations and / or for a wide variety of applications. In various embodiments, phonon fast adiabatic passage is performed by a control device 30 configured to control the operation of the confinement device and / or the operation of a system (e.g., a quantum computer) comprising the confinement device in order to increase the rate of laser cooling of the atomic objects and / or object crystals.

[0048] Figure 1 provides a schematic diagram of an exemplary quantum computer system 100 comprising a confinement device 200 (e.g., an ion trap) according to an exemplary embodiment. In various embodiments, the quantum computer system 100 comprises a computing entity 10 and a quantum computer 110. In various embodiments, the quantum computer 110 comprises a control device 30, a cryostat chamber and / or vacuum chamber 40 for confining the confinement device 200, one or more operating sources 64 (e.g., 64A, 64B, 64C), one or more voltage sources 50, one or more magnetic field generators 70 (e.g., 70A, 70B), and / or an optical collection system 80, etc. In various embodiments, the control device 30 is configured to control the operation of the operating sources 64, voltage sources 50, magnetic field generators 70, vacuum system, and / or cryogenic cooling system (not shown) (e.g., to control one or more drive devices configured to cause operation). In various embodiments, the control device 30 is configured to receive signals (e.g., electrical signals) generated and provided by one or more photodetectors of the optical acquisition system 80.

[0049] In exemplary embodiments, one or more manipulators 64 may comprise one or more lasers (e.g., optical lasers, microwave sources, and / or masers) or other manipulators. In various embodiments, one or more manipulators 64 are configured to manipulate and / or induce controlled quantum state evolution of one or more atomic objects confined by the confinement device 200. For example, a first manipulator 64A is configured to generate and / or provide a first manipulator signal, a second manipulator 64B is configured to generate and / or provide a second manipulator signal, and the first and second manipulator signals are configured to collectively laser-cool the atomic objects and / or object crystals confined by the atomic object confinement device 200.

[0050] In various embodiments, the atomic object confinement device 200 is an ion trap, such as a surface ion trap and / or a pole ion trap. In various embodiments, the atomic object is an ion, an atom, and / or a molecule, etc. In an exemplary embodiment, the object crystal comprises two or more atomic objects having different masses, atomic numbers, and / or molecular compositions. In an exemplary embodiment, the object crystal includes one or more first atomic objects (e.g., atomic objects having a first atomic number) used as cooling the atomic objects in a resonant cooling scheme for the object crystal. In an exemplary embodiment, the object crystal includes one or more second atomic objects (e.g., atomic objects having a second atomic number) used as qubits of the quantum computer 110. For example, in an exemplary embodiment, the object crystal is an ionic crystal comprising a monovalent ion Ba atom used as a cooling ion and a monovalent ion Yb ion used as a qubit ion. In another exemplary embodiment, the object crystal is an ionic crystal comprising a monovalent ion Yb atom used as a cooling ion and a monovalent ion Ba ion used as a qubit ion. In exemplary embodiments, the object crystal includes one first atomic object and one second atomic object. In exemplary embodiments, the object crystal includes two first atomic objects and two second atomic objects. In various embodiments, the object crystal may include various numbers and combinations of atomic objects.

[0051] In exemplary embodiments, each of one or more manipulators 64 provides a manipulator signal (e.g., a laser beam) to one or more regions and / or target locations of the atomic object confinement device 200 via a corresponding beam path 66 (e.g., 66A, 66B, 66C). In various embodiments, at least one beam path 66 includes a modulator configured to modulate the manipulator signal provided to the confinement device 200 via the beam path 66. In various embodiments, the manipulators 64, the active components of the beam paths (e.g., modulators), and / or other components of the quantum computer 110 are controlled by the control device 30.

[0052] In various embodiments, the quantum computer 110 comprises one or more voltage sources 50. For example, the voltage sources may be arbitrary waveform generators (AWGs), digital-to-analog converters (DACs), and / or other voltage signal generators. For example, the voltage sources 50 may comprise a plurality of control voltage drivers and / or voltage sources, and / or at least one RF driver and / or voltage source. In exemplary embodiments, the voltage sources 50 may be electrically coupled to corresponding potential generating elements of the confinement device 200 (e.g., control electrodes 216 and / or RF electrodes 212 as shown in Figure 2).

[0053] In various embodiments, the quantum computer 110 comprises one or more magnetic field generators 70 (e.g., 70A, 70B). For example, the magnetic field generators may be an internal magnetic field generator 70A located inside the cryogenic chamber and / or vacuum chamber 40, and / or an external magnetic field generator 70B located outside the cryogenic chamber and / or vacuum chamber 40. In various embodiments, the magnetic field generators 70 comprise permanent magnets, Helmholtz coils, and / or electromagnets, etc. In various embodiments, the magnetic field generators 70 are configured to generate a magnetic field having a specific magnitude and a specific magnetic field direction in one or more regions and / or target locations of the atomic object confinement device 200.

[0054] In various embodiments, the quantum computer 110 includes an optical collection system 80 configured to collect and / or detect photons (e.g., stimulated emission) generated by qubits (e.g., during a read procedure). The optical collection system 80 may comprise one or more optical elements (e.g., lenses, mirrors, waveguides, and / or optical fiber cables) and one or more photodetectors. In various embodiments, the photodetectors may be photodiodes, photomultiplier tubes, charge-coupled device (CCD) sensors, complementary metal-oxide-semiconductor (CMOS) sensors, microelectromechanical system (MEMS) sensors, and / or other photodetectors sensitive to light at the expected fluorescence wavelength of the qubits (e.g., atomic objects) of the quantum computer 110. In various embodiments, the detectors may electronically communicate with the quantum computer control unit 30 via one or more A / D converters 625 (see Figure 6), etc.

[0055] In various embodiments, the computing entity 10 is configured to allow a user to provide input to the quantum computer 110 (e.g., through the user interface of the computing entity 10) and to receive and / or view outputs from the quantum computer 110. The computing entity 10 can communicate with the control device 30 of the quantum computer 110 via one or more wired or wireless networks 20 and / or via direct wired and / or wireless communication. In exemplary embodiments, the computing entity 10 can convert, configure and / or format information / data and / or quantum computing algorithms (e.g., quantum circuits) into computer languages, executable instructions and / or command sets that the control device 30 can understand, execute and / or implement.

[0056] In various embodiments, the control device 30 is configured to control the operation of a voltage source 50, a magnetic field generator 70, a cryogenic system and / or vacuum system that controls the temperature and pressure in the cryogenic chamber and / or vacuum chamber 40, an operating source 64, and / or other systems that control various environmental conditions (e.g., temperature and / or pressure) in the cryogenic chamber and / or vacuum chamber 40, and is configured to manipulate and / or induce a controlled evolution of the quantum state of one or more atomic objects in the confinement device, and / or is configured to read and / or detect the quantum (e.g., qubit) state of one or more atomic objects in the confinement device. For example, the control device 30 can cause a quantum circuit and / or quantum algorithm to execute in order to control the quantum evolution of the quantum state of one or more atomic objects in the confinement device. For example, the control device 30 may read and / or detect the quantum state of one or more atomic objects in the confinement device at one or more points during the execution of the quantum circuit. In various embodiments, the atomic objects confined by the confinement device are used as qubits in a quantum computer 110.

[0057] Exemplary atomic object confinement device Figure 2 provides a top view of an exemplary confinement device 200 that may be used to confine at least two atomic objects. For example, in an exemplary embodiment, the confinement device is an ion trap (e.g., a surface ion trap), and the atomic objects are ions. In an exemplary embodiment, the confinement device 200 (e.g., a surface ion trap) is fabricated as part of an ion trap chip, and / or as part of the device and / or package of the ion trap. In an exemplary embodiment, the confinement device 200 is at least partially defined by several RF electrodes 212 (e.g., 212A, 212B). In various embodiments, the confinement device 200 is at least partially defined by several sequences 214 (e.g., 214A, 214B, 214C) of control electrodes. Each sequence 214 of control electrodes comprises a plurality of control electrodes 216. In an exemplary embodiment, each control electrode 216, and / or at least a non-empty subset of control electrodes 216, may be operated independently by the application of a control signal to itself. In an exemplary embodiment, the confinement device 200 is a surface pole trap with symmetric RF electrodes 212. In various embodiments, the RF electrodes 212 and the control electrodes 216 generate a potential and / or field experienced by atomic objects within the confinement region 201 of the confinement device 200. Specifically, the RF electrodes 212 may be configured to define the confinement region 201 of the confinement device 200, and the control electrodes 216 may be configured to at least partially control the movement and / or motion of atomic objects within the confinement region 201.

[0058] In various embodiments, the upper surface of the confinement device 200 has a flattened topology. For example, the upper surface of each RF electrode 212 of several RF electrodes 212 and the upper surface of each control electrode 216 of several consecutive control electrodes 214 may be substantially coplanar.

[0059] In various embodiments, the confinement device 200 comprises and / or is at least partially defined by several RF electrodes 212. The RF electrodes 212 are formed by substantially parallel longitudinal axes 211 (e.g., 211A, 211B) and substantially coplanar upper surfaces. For example, the RF electrodes 212 are substantially parallel to each other such that the distance between them is approximately constant along the length of the RF electrodes 212 (e.g., the length of the RF electrodes is along the longitudinal axis 211 of the RF electrodes 212). For example, the upper surfaces of the RF electrodes 212 may be substantially flush with the upper surface of the confinement device 200.

[0060] In exemplary embodiments, some RF electrodes 212 comprise two RF electrodes 212 (e.g., 212A, 212B). In various embodiments, the confinement device 200 may comprise a plurality of RF electrodes 212. For example, the confinement device 200 may be a two-dimensional ion trap comprising a plurality of RF electrodes 212 (e.g., pairs and / or sets), such that each of the plurality of RF electrodes 212 has substantially parallel longitudinal axes 211. In exemplary embodiments, a first number of RF electrodes 212 have substantially parallel longitudinal axes 211, and a second number of RF electrodes 212 have substantially parallel longitudinal axes 211, with the longitudinal axes of the first number of RF electrodes and the longitudinal axes of the second number of RF electrodes being substantially non-parallel (e.g., transverse). Figure 2 shows an exemplary one-dimensional confinement device 200 and / or a portion of a two-dimensional confinement device 200 having two RF electrodes 212, but other embodiments may include additional RF electrodes in various configurations.

[0061] In various embodiments, two adjacent RF electrodes 212 may be separated from each other by a longitudinal gap (e.g., they may be insulated). In various embodiments, the confinement region 201 is at least partially across the longitudinal gap. For example, the longitudinal gap can define the confinement region 201 (in one or two dimensions). In various embodiments, the confinement region 201 may extend substantially parallel to the longitudinal axis 211 of the adjacent RF electrodes 212. For example, the longitudinal gap may extend substantially parallel to the x-axis, as shown in Figure 2. In exemplary embodiments, the longitudinal gap may be at least partially filled with an insulating material (e.g., a dielectric material). In various embodiments, the dielectric material may be silicon dioxide (e.g., formed by thermal oxidation), other dielectric materials, and / or other insulating materials. In various embodiments, the longitudinal gap has a height of approximately 40 μm to 500 μm (e.g., in the y-direction). In various embodiments, one or more continuum 214 of the control electrodes (e.g., a second continuum 214B of the control electrodes) may be positioned and / or formed within a longitudinal gap.

[0062] In exemplary embodiments, transverse gaps may exist between neighboring and / or adjacent control electrodes 216 of one or more continuous control electrodes 214. In exemplary embodiments, transverse gaps may be empty spaces and / or at least partially filled with dielectric material to prevent electrical communication between neighboring and / or adjacent electrodes. In exemplary embodiments, transverse gaps between neighboring and / or adjacent electrodes may be in the range of approximately 1 to 10 μm.

[0063] In exemplary embodiments, a longitudinal gap exists between the continuum 214 of the control electrode and the adjacent and / or neighboring RF electrode 212. In exemplary embodiments, the longitudinal gap may be at least partially filled with a dielectric and / or insulating material to prevent electrical communication between the control electrode 216 of the continuum 214 and the RF electrode 212. In exemplary embodiments, the longitudinal gap between neighboring and / or neighboring electrodes may be in the range of approximately 1 to 10 μm.

[0064] In various embodiments, the confinement device 200 may be at least partially defined by several continuities 214 of control electrodes (e.g., a first continuity 214A of control electrodes, a second continuity 214B of control electrodes, a third continuity 214C of control electrodes). Each continuity 214 of control electrodes is formed to extend substantially parallel to the substantially parallel longitudinal axis 211 of the RF electrode 212. For example, several continuities 214 of control electrodes may extend substantially parallel to the x-axis, as shown in Figure 2. In various embodiments, several continuities 214 of control electrodes may include two, three, four, and / or other numbers of continuities 214 of control electrodes. In exemplary embodiments, the confinement device 200 may comprise a plurality of continuities 214 of control electrodes. For example, the illustrated confinement device 200 is a one-dimensional ion trap comprising three continuities 214 of control electrodes. For example, the confinement device 200 may be a two-dimensional ion trap comprising a plurality of contiguous 214 control electrodes, each extending substantially parallel to substantially parallel longitudinal axes of a corresponding number of RF electrodes 212. In exemplary embodiments, a first number of contiguous 214 control electrodes extend substantially parallel to substantially parallel longitudinal axes 211 of the first number of RF electrodes 212, a second number of contiguous 214 control electrodes extend substantially parallel to substantially parallel longitudinal axes 211 of the second number of RF electrodes 212, and the longitudinal axes of the first number of RF electrodes and the longitudinal axes of the second number of RF electrodes are substantially disparallel (e.g., transverse). In some embodiments, each of the control electrodes 216 of several contiguous 214 control electrodes may be formed on substantially coplanar upper surfaces that are substantially coplanar with the upper surfaces of the RF electrodes 212.

[0065] In exemplary embodiments (for example, as shown in Figure 2), several (e.g., pairs) RF electrodes 212 are formed between the first continuity 214A and the third continuity 214C of the control electrode, such that the second continuity 214B of the control electrode extends along the longitudinal gap between the RF electrodes 212. For example, each continuity 214 of the control electrode may extend in a direction substantially parallel to the longitudinal axis 211 of the RF electrode 212 (e.g., the x-direction). In various embodiments, the upper surface of the control electrode continuity 214 is substantially coplanar with the upper surface of the RF electrode 212.

[0066] In various embodiments, an RF signal may be applied to the RF electrode 212 to generate an electric and / or magnetic field that acts to maintain one or more atomic objects (e.g., ions) trapped within the confinement device 200 in directions transverse to the longitudinal direction of the confinement device 200 (e.g., y and z directions). In various embodiments, a control signal and / or voltage may be applied to the control electrode 216 to generate a desired potential field within the confinement region 201. For example, in various embodiments, a time-dependent, time-varying, time-evolving, and / or non-static DC voltage may be applied to the control electrode 216 to generate a time-dependent, time-varying, time-evolving, and / or non-static potential field that causes the atomic objects trapped within the confinement device 200 to traverse a corresponding trajectory within the confinement region 201. For example, the atomic objects may be moved between various zones, regions, and / or target locations within the confinement device 200 so that various functions can be performed. For example, an atomic object can be initialized, gate-controlled via a single-qubit gate, gate-controlled via a double / multiple-qubit gate, transported and / or stored, and / or read and / or detected.

[0067] In various embodiments, transport and / or the performance of other functions in an atomic object can impart thermal or kinetic energy to the atomic object. Therefore, in various embodiments, it may be desirable to cool the atomic object (e.g., and / or an object crystal containing an atomic object).

[0068] In various embodiments, the control signals and / or voltages applied to the control electrode 216 are generated by one or more voltage sources 50. For example, the control electrode 216 can be electrically connected to each voltage source 50 via one or more leads, wires, traces, and / or vias. The operation of one or more voltage sources 50 is controlled by one or more connected devices (e.g., a control device 30 as shown in Figure 7). For example, depending on the strength of the electrical monopoles and / or dipoles (or poles of a higher degree) of the atomic object (e.g., charge in the case of an electric monopole), the amplitude of the control signal (e.g., voltage) applied to the control electrode 216 can be increased or decreased in the vicinity of the specific atomic object to cause the specific atomic object to traverse a desired trajectory. For example, the control device 30 can control the voltage drive of the voltage source 50 so that it causes the voltage drive to apply a control signal and / or voltage to the control electrode 216 in order to generate a time-dependent potential (e.g., a potential that evolves, migrates, and / or changes over time) that causes atomic objects in the confinement device 200 to traverse a desired trajectory.

[0069] Depending on the strength of the electrical monopoles and / or dipoles (or poles of a higher degree) of the atomic object (e.g., charge in the case of an electric monopole), or the shape and / or degree of the combined electric and / or magnetic fields, the atomic object can be stabilized at a specific distance (e.g., from approximately 20 μm to approximately 200 μm) above the upper surface of the confinement device 200 (e.g., the coplanar upper surface of the control electrode continuum 214 and the RF electrode 212). To further contribute to controlling the transition of the atomic object along a desired trajectory, the confinement device 200 can be operated in a cryogenic chamber and / or vacuum chamber that can cool the confinement device 200 to temperatures below 124 Kelvin (e.g., below 100 Kelvin, below 50 Kelvin, below 10 Kelvin, and / or below 5 Kelvin, etc.) in various embodiments.

[0070] In various embodiments, the confinement potential generated by the RF electrode 212, the continuum of the control electrode 214, and / or the continuum of the RF electrode and / or the continuum of the control electrode 214 defines the confinement region 201 of the confinement device 200. In exemplary embodiments, the confinement potential generated by the RF electrode 212, and / or the RF electrode defines the confinement region 201 of the confinement device 200, and the control electrode 216 controls the movement and / or positioning of atomic objects within the confinement region 201. In various embodiments, the confinement potential generated by the RF electrode 212, the continuum of the control electrode 214, and / or the continuum of the RF electrode and / or the continuum of the control electrode 214 defines the longitudinal axis 205 of the confinement device 200. For example, the confinement potential generated by the RF electrode 212, and / or the RF electrode can define the longitudinal axis 205 of the confinement device 200. In various embodiments, the confinement potential generally acts to align the atomic objects in the confinement device 200 along the RF null axis 210 and / or longitudinal axis 205 of the confinement device 200.

[0071] As described above, various other embodiments may use various other types of confinement devices, such as optical traps, magnetic traps, and / or other types of ion traps, as they are appropriate for the application and atomic object.

[0072] Exemplary cooling operation Various embodiments provide quantum computers, systems, and / or apparatus, etc., corresponding to methods for performing laser cooling of atomic objects. In various embodiments, a first atomic object of an object crystal is used to resonantly cool a second atomic object of the object crystal. In various embodiments, the transfer of phonons and / or kinetic energy from one or more second modes of motion of the object crystal to one or more first modes of motion of the object crystal is used with one or more types of laser cooling (e.g., Doppler cooling, resolved sideband cooling, and / or EIT cooling) to reduce the laser cooling time of the object crystal and / or to reduce the technical difficulties of laser cooling the atomic objects. In various embodiments, one or more first modes of motion of the object crystal are easier to cool and / or faster to cool than one or more second modes of motion of the object crystal.

[0073] For example, Figure 3A shows an object crystal 310 comprising a first atomic object 312 and a second atomic object 314 located at a target location 305. The target location 305 is defined at least in part by the confinement device 200. The first atomic object 312 and the second atomic object 314 are aligned along the object axis 302. In various embodiments, the object axis 302 is parallel and / or collinear with the RF null axis 210 and / or longitudinal axis 205 of the confinement device 200 at the target location 305. The physical extension or length of the object crystal 310 is the object crystal length d. As should be understood, the object crystal may, in various embodiments, contain three or more atomic objects and may contain three or more atomic object types (e.g., atomic objects with different atomic masses, atomic numbers, and / or molecular compositions).

[0074] The illustrated object crystal 310 has six different motion modes. For example, the motion modes of the object crystal 310 include, in an exemplary embodiment, two axial motion modes in the direction of the object axis 302, two radial motion modes perpendicular to the object axis 302 and in the plane of the paper, and two radial motion modes perpendicular to the object axis 302 and perpendicular to the plane of the paper. One or more of these motion modes (e.g., two axial modes in an exemplary embodiment) can be cooled more easily and / or faster than one or more other motion modes (e.g., radial modes in an exemplary embodiment).

[0075] In exemplary embodiments, laser cooling is used to cool one or more first motion modes of an object crystal. This results in the phonon ensemble of one or more first motion modes being very small, and / or possibly zero. However, the phonon ensembles of one or more second motion modes of the object crystal are substantially unaffected by the cooling of one or more first motion modes of the object crystal. To reduce the phonon ensembles of the second motion modes, a first portion of the phonon ensembles of the second motion modes is transferred to a motion mode (e.g., one of the first motion modes) having a smaller phonon ensemble. This phonon ensemble transfer is carried out using fast adiabatic phonon passage. In exemplary embodiments, almost all of the phonon ensembles of the second motion modes are transferred to the first motion modes via fast adiabatic phonon passage, and vice versa (e.g., almost all of the phonon ensembles of the first motion modes are transferred to the second motion modes via fast adiabatic phonon passage). In other exemplary embodiments, a fraction of the phonon ensemble of a second motion mode less than 1 (e.g., 0.9, 0.8, 0.75, 0.7, 0.6, 0.5, 0.4, 0.3, and / or 0.25, etc.) is transferred to a first motion mode via a fast adiabatic phonon pass. The first motion mode, having received at least a portion of the phonon ensemble from the second motion mode, may be cooled again (e.g., using laser cooling techniques) so that the phonon ensemble of the first motion mode is reduced to near zero or equal to zero. Another fast adiabatic phonon pass may be performed to transfer a second portion of the phonon ensemble of a second motion mode to a first motion mode, which may then be depleted again using laser cooling techniques. Iteratively, the reduction of each phonon ensemble of one or more second motion modes and the depletion of the phonon ensemble of one or more first motion modes may be performed via fast adiabatic phonon passes until the object crystal is sufficiently cooled for application.For example, cooling of one or more first modes of motion via laser cooling and cooling of one or more second modes of motion via phonon fast adiabatic passage can be repeated and / or iterated until a desired level of cooling is achieved.

[0076] Figures 4 and 5 illustrate the various components of how phonon fast adiabatic passage is carried out between sets of motion modes of the object crystal. Figure 5 provides a plot showing the mode frequencies of four different motion modes of the object crystal as the confinement well frequency changes. As should be understood, the object crystal is confined within a confinement well (e.g., a potential well) generated by the confinement device 200. For example, the application of appropriate voltage signals to the RF electrode 212 and control electrode 216 of the confinement device 200 acts as a confinement well, resulting in a potential well that confines the object crystal. The physical width of the confinement well (in the direction of the longitudinal axis 205) corresponds to and / or controls the object crystal length d. The physical width of the confinement well (in the direction of the longitudinal axis 205) corresponds to the confinement well frequency. For example, as the confinement well frequency increases, the object crystal length d decreases. For example, a voltage signal supplied to the control electrode 216 can cause the curvature of the (electrical) potential well in which the object crystal is confined to increase in the direction of the longitudinal axis 205. This shortens the object crystal length d and increases the frequency corresponding to the potential well (e.g., the harmonic oscillator frequency) in the direction of the longitudinal axis 205.

[0077] The solid line 502 shows the evolution of the axial motion mode of the object crystal, dominated by the motion of the first atomic object of the object crystal, as the confinement well frequency increases. The solid line 512 shows the evolution of the axial motion mode of the object crystal, dominated by the motion of the second atomic object of the object crystal, as the confinement well frequency increases. The dashed line 504 shows the radial motion mode dominated by the motion of the first atomic object, and the dashed line 514 shows other radial motion modes dominated by the motion of the second atomic object of the object crystal as the confinement well frequency image increases.

[0078] The degeneracy point 520 is formed by the intersection of the dashed line 504 (mode frequency of the radial motion mode dominated by the motion of the first atomic object of the object crystal) and the solid line 512 (mode frequency of the axial motion mode dominated by the motion of the second atomic object of the object crystal). Therefore, when the confinement well frequency is equal to the value corresponding to the degeneracy point 520, the motion modes of the object crystal corresponding to lines 504 and 512 are degenerate (for example, they have the same mode frequency).

[0079] While the confinement well frequency is close to the confinement well frequency corresponding to the point of degeneracy between the motion modes of the object crystal corresponding to lines 504 and 512 (for example, within approximately 100 kHz of the confinement well frequency corresponding to the degeneracy point 520), the atomic objects of the object crystal are coupled to each other through interaction with the bonding forces of the atomic objects. For example, one or more coupling signals may be applied to the respective control electrodes 216 at or near the target location 305 to cause the atomic objects 312, 314 of the object crystal 310 to experience the bonding forces.

[0080] Figure 3B shows exemplary results of an object crystal 310 experiencing a bonding force 320. In the exemplary embodiment, the bonding force 320 is a radial push in a direction perpendicular to the RF null axis 210. In the exemplary embodiment, the radial push of the bonding force has a different amplitude at the location of the first atomic object 312 compared to the location of the second atomic object 314. In the exemplary embodiment, the radial push of the bonding force has the same amplitude at the location of the second atomic object 314 and the location of the first atomic object 312. For example, one or more bonding signals can be generated and applied to their respective electrodes (e.g., control electrode 216) to generate a radial electric field that causes the atomic objects 312, 314 to experience a radial push.

[0081] In exemplary embodiments, the coupling force is a torque caused by a shim field in a plane parallel to a plane defined by the surface of the atomic object confinement device 200 (e.g., the xy-plane as shown in Figure 2). For example, one or more coupling signals can be generated and applied to their respective electrodes (e.g., control electrodes 216) to generate an (electrical) shim field that causes the atomic objects 312, 314 to experience the shim field.

[0082] In exemplary embodiments, the binding force is a higher-order (e.g., third-order, fourth-order) derivative term in the potential generated by the confinement device at the location of the object crystal. As used herein, a higher-order derivative term refers to a derivative term of third order or higher. For example, a voltage source 50 generates and provides a voltage signal that is applied to the control electrode 216 of the confinement device 200. The application of the voltage signal to the control electrode 216 generates a potential (e.g., electric potential). The potential generated at the location of the object crystal may be configured (e.g., via the applied voltage signal) to include a higher-order derivative (e.g., a derivative of third-order, fourth-order, etc.) that causes the object crystal to experience a binding force when the object crystal experiences the potential.

[0083] In various embodiments, the first atomic object 312 is heavier and / or larger than the second atomic object 314. As a result, the second atomic object 314 moves a greater distance away from the RF null axis 210 than the first atomic object 312. As a result of the object crystal 310 experiencing the bonding force 320, the Coulomb force between the first atomic object 312 and the second atomic object 314 has both an axial component (e.g., parallel to the RF null axis 210) and a radial component (e.g., perpendicular to the RF null axis 210), thus coupling the axial and radial motion modes of the atomic objects 312, 314 and / or object crystal 310 so that phonons can be transferred between radial and axial motion modes at the point of degeneracy.

[0084] As a result of object crystal 310 experiencing a coupling force, the phonon ensembles of the motion modes of the object crystal corresponding to lines 504 and 512 are made equal. For example, as the object crystal length d continues to shorten and the confinement well frequency continues to increase, the motion modes of the object crystal corresponding to lines 504 and 512 no longer degenerate. However, the phonon ensembles of the two motion modes at the point of degeneracy result in some of the phonons previously present in the motion mode corresponding to line 504 now being present in the motion mode corresponding to line 512, and vice versa. If the motion mode corresponding to line 512 initially has a very small phonon ensemble (e.g., approximately zero) and the motion mode corresponding to line 504 has a positive phonon ensemble, then the result of the coupling force being applied at point degeneracy (e.g., degeneracy point 520) is that the phonon ensemble of the motion mode corresponding to line 512 is increased and the phonon ensemble of the motion mode corresponding to line 504 is decreased. Therefore, if the motion mode corresponding to line 512 is easier and / or faster to cool than the motion mode corresponding to line 504, the transfer of the phonon ensemble between the two motion modes allows for easier and / or faster cooling of the object crystal.

[0085] In various embodiments, phonon transfers between the motion modes of an object crystal are carried out adiabatically. For example, at least one of the atomic objects of the object crystal may be used to store quantum information. For example, the evolution of the quantum state of a second atomic object is controlled (e.g., as part of implementing a quantum circuit). To preserve and / or not destroy the quantum information stored by at least one atomic object of the object crystal, phonon transfers between the motion modes of the object crystal are carried out coherently. Adiabatic phonon transfers between the motion modes of the object crystal ensure that phonon transfers between the motion modes of the object crystal are carried out coherently.

[0086] As those skilled in the art will understand, adiabatic phonon transfer is a phonon transfer that occurs slowly enough to prevent the object crystal undergoing motion mode coupling or phonon transfer from transitioning to other eigenstates (e.g., via coupling of each motion mode of the object crystal). For example, coupling and / or phonon transitions occur slowly with respect to the mode frequency at which the motion modes are coupled and / or the mode frequency at which the phonons are transferred.

[0087] To induce phonon transfer between the motion modes of an object crystal performed adiabatically, a coupling force is slowly applied and slowly deactivated after the phonon transfer. For example, the amplitude of the coupling force is zero at the start of the phonon fast adiabatic passage. The amplitude of the coupling force is slowly increased (with respect to the motion mode frequency of the coupled motion mode) to its maximum amplitude. Then, the amplitude of the coupling force is slowly decreased (with respect to the motion mode frequency of the coupled motion mode) from its maximum amplitude to zero. The coupling force reaches its maximum amplitude when it is approximately the same as the confinement well frequency at which the coupled motion mode evolves to pass through its degeneracy point (e.g., the point at which the respective mode frequencies of the coupled motion modes are equivalent via phonon fast adiabatic passage) (e.g., within 1 to 10 microseconds of the confinement well frequency).

[0088] Figure 4 shows the time from the initial time t0 when the phonon fast adiabatic passage begins to the final time t when the phonon fast adiabatic passage is completed. f The evolution of the object crystal length d (dashed line) and the evolution of the bonding force amplitude (dotted line) up to the final time t0 is shown. Starting at the initial time t0, the object crystal length d is equal to the initial length d0. f In this case, the object length d is the final length d f It is equal to. In an exemplary embodiment, the initial length d0 is 4 microns, and the final length d f It is 3 microns. In various embodiments, various other initial lengths d0 and / or final lengths d fcan be used as appropriate for the application. In various embodiments, the object crystal length d is between an initial time t0 and a final time t f and decreases monotonically. In the illustrated embodiment, the object crystal length d is between the initial time t0 and the final time t f and decreases linearly. In various embodiments, the object crystal length d is between the initial time t0 and the final time t f and decreases monotonically in various forms (e.g., quadratically, cubically, exponentially, etc.).

[0089] At a first time t1, which is after and / or simultaneous with an initial time t0 (when the evolution of the object crystal length d is caused, initiated, and / or begun), the amplitude of the binding force is increased from an amplitude of zero. At a second time t2 that is after the first time t1, the binding force reaches a maximum amplitude A max . After reaching the second time t2, the amplitude of the binding force is reduced until it reaches zero at a third time t3 that is after the second time t2. A final time t f (when evolution of the object crystal length d is stopped, terminated, and / or completed) is after and / or simultaneous with the third time t3. In various embodiments, the time duration of performing a phonon rapid adiabatic passage (e.g., t f ~t0) is 5 to 30 microseconds. In various embodiments, the time duration of performing a phonon rapid adiabatic passage (e.g., t f ~t0) is 10 to 20 microseconds.

[0090] In an exemplary embodiment, the binding force is generated by applying a (non-oscillating) binding signal (e.g., a voltage signal generated by voltage supply 50) to one or more control electrodes 216. In exemplary embodiments, increasing the amplitude of the binding force is achieved by increasing the voltage amplitude of the binding signal (e.g., from zero towards a maximum voltage), and decreasing the amplitude of the binding force is achieved by decreasing the voltage amplitude of the binding signal (e.g., from the maximum voltage to zero). In various embodiments, the (absolute) maximum voltage ranges from 1 volt to 20 volts.

[0091] In exemplary embodiments, the transition window 530 for the degeneracy point 520 has a width of 500 to 50 kHz in mode frequencies. In exemplary embodiments, the transition window 530 is relative to the time between a first time t1 and a third time t3. For example, when performing phonon fast adiabatic passage, the object crystal reaches the left side of the transition window 530 at the first time t1. In other words, in various embodiments, the coupling force begins to increase from zero amplitude to maximum amplitude when the mode frequencies of the coupled motion modes are within each other's range of 200 to 50 kHz (e.g., 100 to 50 kHz). The coupling force returns to zero amplitude when the object crystal reaches the right side of the transition window 530 at the third time t3. In other words, in various embodiments, the coupling force returns to zero amplitude when the mode frequencies of the coupled motion modes are within each other's range of 200 to 50 kHz (e.g., 100 to 50 kHz).

[0092] Exemplary control device In various embodiments, the confinement device 200 is incorporated into a quantum computer 110 or other atomic system. In various embodiments, the quantum computer 110 or other atomic system further comprises a control device 30 configured to control various elements of the quantum computer 110 or other atomic system. For example, the control device 30 may be configured to control a voltage source 50, a cryogenic system and / or vacuum system that controls the temperature and pressure in the cryogenic chamber and / or vacuum chamber 40, an operating source 64 (e.g., 64A, 64B, 64C), a magnetic field generator 70, active components of the beam path 66, and / or other systems that control environmental conditions (e.g., temperature, humidity, and / or pressure, etc.) in the cryogenic chamber and / or vacuum chamber 40, and may be configured to manipulate and / or induce a controlled evolution of the quantum state of one or more atomic objects confined by the confinement device, and / or may be configured to read and / or detect the quantum state of one or more atomic objects in the confinement device.

[0093] As shown in Figure 6, in various embodiments, the control unit 30 may comprise a processing device 605, a memory 610, a drive control device element 615, a communication interface 620, and / or an analog-to-digital converter element 625, etc. For example, the processing device 605 may comprise a processing element, a programmable logic device (CPLD), a microprocessor, a coprocessing entity, an application-specific instruction set processor (ASIP), an integrated circuit, an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a programmable logic array (PLA), a hardware accelerator, and / or other processing devices and / or circuits, etc. The term "circuit" can refer to an embodiment of hardware as a whole, or a combination of hardware and a computer program product. In an exemplary embodiment, the processing device 605 of the control unit 30 comprises and / or communicates with a clock.

[0094] For example, memory 610 may include non-temporary memory such as volatile and / or non-volatile memory storage devices, such as hard disks, ROMs, PROMs, EPROMs, EEPROMs, flash memory, MMCs, SD memory cards, memory sticks, CBRAMs, PRAMs, FeRAMs, RRAMs, SONOS, racetrack memory, RAMs, DRAMs, SRAMs, FPM DRAMs, EDO DRAMs, SDRAMs, DDR SDRAMs, DDR2 SDRAMs, DDR3 SDRAMs, RDRAMs, RIMMs, DIMMs, SIMMs, VRAMs, cache memory, and / or register memories, one or more of these. In various embodiments, memory 610 may store qubit records corresponding to the qubits of a quantum computer (e.g., qubit record data storage, both bit record databases, and / or qubit record tables), calibration tables, executable queues, and / or computer program code (e.g., one or more computer languages, dedicated control device languages, etc.). In an exemplary embodiment, the execution of at least a portion of computer program code stored in memory 610 (e.g., by processing device 605) causes control device 30 to perform one or more steps, operations, processes, and / or procedures described herein in order to control one or more components of the quantum computer 110 or other atomic system (e.g., voltage source 50, operation source 64, and / or magnetic field generator 70) to cause a controlled evolution of the quantum state of one or more atomic objects, and / or to detect and / or read the quantum state of one or more atomic objects, etc.

[0095] In various embodiments, the drive control element 615 may comprise one or more drive devices and / or control elements, each configured to drive one or more drive devices. In various embodiments, the drive control element 615 may comprise a drive device and / or a drive device control device. For example, a drive device control device may be configured to operate one or more corresponding drive devices according to executable instructions and / or commands, etc., scheduled and executed by the control device 30 (e.g., by the processing device 605). In various embodiments, the drive control element 615 may be capable of causing the control device 30 to operate an operating source 64. In various embodiments, a drive device may be a laser drive device, a vacuum component drive device, a drive device for controlling the flow of current and / or voltage applied to longitudinal electrodes, RF electrodes, and / or other electrodes used to maintain and / or control the confinement potential of a confinement device (and / or other drive devices for providing the operating sequence and / or control signals of the drive device to the potential generating element of the confinement device), and / or a drive device for components of a cryogenic system and / or a vacuum system. For example, the drive unit can control and / or include a control and / or RF voltage drive and / or voltage source that provides voltage and / or electrical signals to the control electrode 216 and / or RF electrode 212 (e.g., including a coupling signal). In various embodiments, the control unit 30 includes means for communicating and / or receiving signals from one or more detectors, such as optical receiver components (e.g., cameras, MEMS cameras, CCD cameras, photodiodes, and / or photomultiplier tubes). For example, the control unit 30 may include one or more analog-to-digital converter elements 625 configured to receive signals from one or more detectors, optical receiver components, calibration sensors, and / or photodetectors of an optical acquisition system 80.

[0096] In various embodiments, the control unit 30 may include a communication interface 620 for interaction with and / or communication with the computing entity 10. For example, the control unit 30 may include a communication interface 620 for receiving executable instructions and / or command sets from the computing entity 10 and providing the computing entity 10 with outputs received from the quantum computer 110 (e.g., from an optical collection system comprising one or more detectors 125) and / or the results of processing the outputs. In various embodiments, the computing entity 10 and the control unit 30 can communicate via direct wired and / or wireless connections, and / or via one or more wired and / or wireless networks 20.

[0097] An exemplary method for performing a cooling operation using adiabatic phonon transfer. Figure 7A shows a flowchart illustrating various processes and / or procedures performed by the quantum computer 110 and / or the atomic system control device 30 to perform a cooling operation using adiabatic phonon transfer in various embodiments. In various embodiments, adiabatic phonon transfer is the transfer of phonons between the motion modes of the object crystal and / or the transfer of the coherent coupling of motion modes between phonons. In various embodiments, adiabatic phonon transfer is phonon fast adiabatic passage. The exemplary embodiments shown in Figure 7A correspond to the performance of a cooling operation on the object crystal 310 by a QCCD-based quantum computer, such as the quantum computer 110.

[0098] Beginning in step / operation 702, the control unit 30 causes laser cooling of one or more motion modes of the object crystal. For example, the control unit 30 controls the operation of one or more manipulators 64 to cause them to generate and / or provide one or more manipulator signals. In various embodiments, the manipulator signals are configured to carry out laser cooling of the object crystal. For example, the control unit 30 controls the operation of one or more manipulators 64 to cause them to generate and / or provide one or more laser cooling manipulator signals to a target location via their respective beam paths 66.

[0099] An object crystal is positioned at a target location, and one or more operational signals incident on the object crystal (e.g., at the target location) cool one or more first motion modes of the object crystal. For example, the operational signals incident on the object crystal (e.g., at the target location) reduce and / or deplete the phonon population of one or more first motion modes. For example, as a result of the operational signals interacting with the object crystal (e.g., at the target location), the phonon population of one or more first motion modes may be approximately zero (e.g., substantially equal to zero and / or close to zero) and / or below a suitable threshold for application.

[0100] In various embodiments, the control device 30 controls the operation of one or more manipulators 64 through the execution of executable instructions by processing devices 605 and / or drive control device elements 615 configured to control the operation of each manipulator.

[0101] In step / operation 704, the control device 30 induces an adiabatic transfer of phonons from one or more second motion modes of the object crystal to one or more first motion modes of the object crystal. For example, the control device 30 controls the operation of one or more voltage sources 50 to induce an adiabatic transfer of phonons and / or kinetic energy from one or more second motion modes to one or more first motion modes. For example, in various embodiments, the control device 30 controls the operation of one or more voltage sources 50 such that the environment experienced by the object crystal induces an adiabatic transfer of phonons from one or more second motion modes of the object crystal to one or more first motion modes. For example, the control device 30 controls the operation of one or more voltage sources 50 such that the environment experienced by the object crystal induces an adiabatic transfer of phonons from one or more second motion modes of the object crystal to one or more first motion modes. In various embodiments, the adiabatic transfer of phonons takes less than 100 microseconds. In an exemplary embodiment, the adiabatic transfer of phonons takes less than 20 microseconds.

[0102] For example, the control device 30 controls the operation of one or more voltage sources 50 such that one or more second motion modes and one or more first motion modes of the object crystal are coupled, and the combined phonon ensemble of the first and second motion modes is redistributed between the first and second motion modes. This results in an increase in the phonon ensemble of one or more first motion modes and a decrease in the phonon ensemble of one or more second motion modes. In various embodiments, the transfer of phonons from one or more second motion modes to one or more first motion modes is carried out via phonon fast adiabatic passage.

[0103] In various embodiments, the control device 30 controls the operation of one or more voltage sources 50 through the execution of executable instructions by a processing device 605 and / or a drive control device element 615 configured to control the operation of each voltage source.

[0104] In step / operation 706, the control device 30 causes laser cooling of one or more first motion modes of the object crystal. For example, the control device 30 controls the operation of one or more manipulators 64 to cause them to generate and / or provide one or more manipulator signals. In various embodiments, the manipulator signals are configured to perform laser cooling of the object crystal. For example, the control device 30 controls the operation of one or more manipulators 64 to cause them to generate and / or provide one or more laser cooling manipulator signals to a target location via their respective beam paths 66.

[0105] For example, the control device 30 controls the operation of one or more manipulators 64 to cause laser cooling of one or more first motion modes of the object crystal. For example, the manipulator signal is incident on the object crystal (e.g., at a target location) to reduce and / or deplete the phonon population of one or more first motion modes. For example, as a result of the manipulator signal interacting with the object crystal (e.g., at a target location), the phonon population of one or more first motion modes may be approximately zero (e.g., substantially equal to zero and / or close to zero) and / or below a suitable threshold for application.

[0106] In various embodiments, the control device 30 controls the operation of one or more manipulators 64 through the execution of executable instructions by processing devices 605 and / or drive control device elements 615 configured to control the operation of each manipulator.

[0107] In various embodiments, steps / operations 704 and 706 may be repeated multiple times for various second motion modes and / or first motion modes. For example, steps / operations 704 and 706 may be repeated to reduce the phonon population of each of the one or more second motion modes of the object crystal by transferring phonons from one or more second motion modes to one or more first motion modes, and to reduce the phonon population of each of the one or more first motion modes by laser cooling the first motion modes. In various embodiments, steps / operations 704 and 706 may be repeated and / or iterated until a desired and / or adequate level of cooling is achieved, as appropriate for the application.

[0108] In various embodiments, performing an adiabatic transfer of phonons from one or more second motion modes to one or more first motion modes is performed by changing the object crystal length from an initial length d0 to a final length d f This includes shortening to . In various embodiments, step / operation 702 is performed with an object crystal length substantially equal to the initial length d0. In various embodiments, step / operation 706 is performed with a final length d f The process is carried out with an object crystal length substantially equal to the initial length d0, and / or the final length d f This is performed with object crystal lengths larger than that.

[0109] In various embodiments, one or more first motion modes are easier and / or faster to cool than one or more second motion modes of the object crystal. For example, one or more first motion modes of the object crystal have a faster cooling rate (e.g., the kinetic energy in the first motion modes can be reduced more quickly than the kinetic energy in the second motion modes of the object crystal). In other examples, the first motion modes of the object crystal are technically easier to cool than the second motion modes of the object crystal (e.g., using a laser of a wavelength that is technically easier to generate, or a laser of a wavelength that is easier to guide from the laser / operating source to the target location).

[0110] Figure 7B provides a flowchart illustrating various processes and / or procedures, etc., carried out by the quantum computer 110 and / or the atomic system control device 30 to carry out adiabatic phonon transfer via phonon fast adiabatic passage, according to various embodiments. For example, the processes and / or procedures shown in Figure 7B are carried out as part of step / operation 704 in various embodiments.

[0111] Starting in step / operation 712, the control device 30 shortens the object crystal length. For example, the control device 30 controls the operation of one or more voltage sources 50 to cause them to generate and provide (e.g., to each control electrode 216) a voltage signal that shortens the object crystal length. For example, as shown in Figure 4 at the initial time t0 of the phonon fast adiabatic passage, the control device 30 controls the operation of one or more voltage sources 50 to cause them to generate and provide a voltage signal that, when applied to each control electrode 216, shrinks the object crystal in dimensions (at least in the direction defined by the longitudinal axis 205 at the target location) into the confinement well in which it is trapped. The reduction in dimensions of the confinement well compresses the atomic objects of the object crystal as a whole, so that the object crystal length d is shortened. The reduction in dimensions of the confinement well increases the confinement well frequency.

[0112] In various embodiments, the control device 30 controls the operation of one or more voltage sources 50 through the execution of executable instructions by a processing device 605 and / or a drive control device element 615 configured to control the operation of each voltage source.

[0113] In various embodiments, as shown in Figure 4, the control device 30 controls the operation of one or more voltage sources 50 so that the confinement well in which the object crystal is trapped continues to shrink in size (at least in the direction defined by the longitudinal axis 205 at the target location) during the execution of step / operation 714. For example, the execution of step / operation 712 and the execution of step / operation 714 may overlap in time.

[0114] In step / operation 714, the control device 30 controls the operation of one or more voltage sources 50 to cause them to generate and provide a coupling signal that increases from zero to a maximum amplitude / voltage and then decreases to zero amplitude. The application of the coupling signal to the appropriate control electrode 216 causes the object crystal to experience a coupling force. For example, as shown in Figure 4, starting at a first time t1 during the phonon fast adiabatic passage, the control device 30 causes at least one voltage source 50 to generate and provide a coupling signal that generates an electric field when applied to one or more control electrodes 216, causing the object crystal to experience a coupling force when the object crystal interacts with the electric field. For example, the application of the coupling signal to one or more control electrodes 216 generates radial push, a shim field, and / or higher-order derivative terms of the potential. The amplitude of the coupling signal (e.g., a voltage signal) increases from zero amplitude to maximum amplitude / voltage so that the coupling signal has a maximum amplitude / voltage at a second time t2 during the phonon fast adiabatic passage. In various embodiments, the control device 30 causes at least one voltage source 50 to generate and provide a coupled signal such that, after the coupled signal reaches its maximum amplitude / voltage, the amplitude of the coupled signal decreases to zero (for example, at a third time t3).

[0115] In various embodiments, the rise and fall of the coupled signal are symmetrical. For example, in an exemplary embodiment, the time derivative of the coupled signal amplitude between a first time t1 and a second time t2 is the negative of the time derivative of the coupled signal amplitude between a second time t2 and a third time t3. For example, in an exemplary embodiment, the amplitude of the coupled signal increases linearly with a gradual slope between a first time t1 and a second time t2, and decreases linearly with a gradual slope between a second time t2 and a third time t3 (for example, in an exemplary embodiment,

[0116]

number

[0117] (That is.)

[0118] In various embodiments, the amplitude of the coupling signal (and consequently the amplitude of the coupling force) increases slowly with respect to the motion mode frequencies of the first and second motion modes coupled to each other. For example, in various embodiments, the time between the first time t1 and the second time t2 (e.g., t2-t1) is 1 to 15 microseconds. For example, in various embodiments, the time between the second time t2 and the third time t3 (e.g., t3-t2) is 1 to 15 microseconds. For example, in various embodiments, the time between the first time t1 and the third time t3 (e.g., t3-t1) is 2 to 30 microseconds.

[0119] Referring to Figure 5, the first time t1 can correspond to the time when the confinement well frequency enters the transition window 530 from the left. For example, the second time t2 can roughly correspond to the time when the confinement well frequency passes through the degeneracy point 520. For example, the third time t3 can correspond to the time when the confinement well frequency exits the transition window 530 via the right side of the transition window.

[0120] In step / operation 716, the control device 30 stops shortening to the object crystal length. For example, the control device 30 controls the operation of one or more voltage sources 50 to cause them to generate and provide (e.g., to each control electrode 216) a voltage signal that stops shortening to the object crystal length. For example, the final time t of phonon fast adiabatic passage. f As shown in Figure 4, the object crystal length is the final object crystal length d fUpon reaching a certain point, the control device 30 controls the operation of one or more voltage sources 50 to cause them to generate and provide a voltage signal, and when this voltage signal is applied to each control electrode 216, it causes the confinement well in which the object crystal is confined to stop shrinking in dimensions (at least in the direction defined by the longitudinal axis 205 at the target location). For example, the control device 30 controls the operation of one or more voltage sources 50 to cause them to generate and provide a voltage signal, and when this voltage signal is applied to each control electrode 216, it causes the confinement well in which the object crystal is confined to maintain the same dimensions (at least in the direction defined by the longitudinal axis 205 at the target location). The dimensions of the confinement well that maintain their dimensions cause the object crystal length d to be invariant and / or to maintain its value. For example, the final time t when performing phonon fast adiabatic passage f In this case, the voltage source provides a voltage signal that stops shortening the object crystal length to the final length d. f The control device 30 controls the operation of the voltage supply source 50 to generate and provide a voltage signal that is maintained at that level.

[0121] In various embodiments, the control device 30 controls the operation of one or more voltage sources 50 through the execution of executable instructions by a processing device 605 and / or a drive control device element 615 configured to control the operation of each voltage source.

[0122] In step / operation 718, the control device 30 increases the object crystal length. For example, the control device 30 controls the operation of one or more voltage sources 50 to cause them to generate and provide (e.g., to each control electrode 216) a voltage signal that increases the object crystal length. In various embodiments, the object crystal length is the final length d fThe length can be increased to a length greater than or equal to the initial length d0. In various embodiments, the object crystal length is increased to be substantially equal to the initial length d0. In various embodiments, the object crystal length is increased to be greater than the initial length d0. For example, the control device 30 controls the operation of one or more voltage sources 50 to cause the voltage sources 50 to generate and provide voltage signals, which, when applied to the respective control electrodes 216, increase the dimensions (at least in the direction defined by the longitudinal axis 205 at the target location) of the confinement well in which the object crystal is confined. The increasing dimensions of the confinement well (at least in the direction defined by the longitudinal axis 205 at the target location) increase the object crystal length d (in the direction defined by the longitudinal axis 205 at the target location).

[0123] In various embodiments, the control device 30 controls the operation of one or more voltage sources 50 through the execution of executable instructions by a processing device 605 and / or a drive control device element 615 configured to control the operation of each voltage source.

[0124] Technical advantages Various embodiments offer technical solutions to the technical problems of laser-cooling atomic objects within a confinement device. For example, when cooling an atomic object, each mode of motion must be cooled independently, and the cooling rates of different modes of motion can be very different. For instance, the cooling rates between two different modes of motion in an object crystal can differ by more than an order of magnitude. However, the overall cooling time for an object crystal may be limited by the slowest cooling rate of all modes of motion. This results in a considerable length of execution time for various atomic systems and / or quantum computers that are dedicated to cooling operations rather than quantum state evolution operations. Furthermore, laser-cooling some of the modes of motion may require the use of a laser beam characterized by wavelengths that are technically difficult to generate and / or difficult to guide from the laser or other source of operation to a target location at least partially determined by the confinement device. Thus, technical problems exist regarding laser-cooling object crystals.

[0125] Various embodiments provide technical solutions to these technical problems. For example, various embodiments adiabatically transfer kinetic energy (e.g., phonons) from one or more motion modes of an object crystal that are more difficult and / or slower to cool (e.g., via laser cooling) to one or more motion modes of an object crystal that are easier and / or faster to cool. For example, one or more implementations of fast adiabatic phonon transfer can be used to reduce the phonon population of one or more motion modes of an object crystal that are more difficult and / or slower to cool, and to correspondingly increase the phonon population of one or more motion modes of an object crystal that are easier and / or faster to cool. Thus, one or more motion modes of an object crystal that are easier and / or faster to cool can be efficiently cooled via laser cooling. The transfer of energy (phonons) from the more difficult and / or slower motion modes of an object crystal to cool to the easier and / or faster motion modes of an object crystal allows for cooling of the object crystal at a faster cooling rate than conventional laser cooling. This improves the efficient cooling rate of the object crystal, allowing it to be cooled relatively efficiently.

[0126] Therefore, various embodiments provide technical improvements to the field of quantum computer operation (for example, for quantum computers based on QCCD), and / or to the field of laser cooling of confined atomic objects and / or object crystals. For example, by reducing the effective cooling time of atomic objects and / or object crystals through adiabatic transfer of phonons, from slower to faster cooling of motion modes, faster quantum circuit execution times can be provided, allowing deeper quantum circuits to be implemented (for example, within qubit coherence time constraints).

[0127] Exemplary Computing Entity Figure 8 provides a schematic illustration of an exemplary computing entity 10 that may be used in conjunction with embodiments of the present invention. In various embodiments, the computing entity 10 is configured to allow a user to provide input to a quantum computer 110 (e.g., through the user interface of the computing entity 10), and to receive, display, and / or analyze outputs from the quantum computer 110.

[0128] As shown in Figure 8, the computing entity 10 may comprise an antenna 812, a transmitter 804 (e.g., wireless), a receiver 806 (e.g., wireless), and a processing device 808 that provides a signal to the transmitter 804 and receives a signal from the receiver 806. The signal provided to the transmitter 804 and received from the receiver 806 may include signal transmission information / data that conforms to the applicable wireless system air interface standard for communicating with various entities, such as the control unit 30 and / or other computing entities 10. In this regard, the computing entity 10 may be capable of operating with one or more air interface standards, communication protocols, modulation formats, and access types. For example, the computing entity 10 may be configured to receive and / or provide communications using wired data transmission protocols such as Fiber Optic Distributed Data Interface (FDDI), Digital Subscriber Line (DSL), Ethernet, Asynchronous Transfer Mode (ATM), Frame Relay, Data Over Cable Service Interface Specification (DOCSIS), or any other wired transmission protocol.Similarly, Computing Entity 10 supports General Packet Radio Services (GPRS), Universal Mobile Telecommunications System (UMTS), Code Division Multiple Access 2000 (CDMA2000), CDMA2000 1X (1xRTT), Wideband Code Division Multiple Access (WCDMA®), Global System for Mobile Communications (GSM), Enhanced Data Rate (EDGE), Time Division Synchronous Code Division Multiple Access (TD-SCDMA), Long-Term Evolution (LTE), Evolutionary Universal Terrestrial Radio Access Network (E-UTRAN), Data Optimized Evolution (EVDO), High Speed ​​Packet Access (HSPA), High Speed ​​Downlink Packet Access (HSDPA), IEEE 802.11 (Wi-Fi), and Wi-Fi. Computing entity 10 may be configured to communicate over a wireless external communication network using any of a variety of protocols, such as Direct, 802.16 (WiMAX), Ultra-Wideband Wireless (UWB), Infrared (IR) protocol, Near Field Communication (NFC) protocol, Wibree, Bluetooth protocol, Wireless Universal Serial Bus (USB) protocol, and / or any other wireless protocol. Computing entity 10 may use such protocols and standards to communicate using Border Gateway Protocol (BGP), Dynamic Host Configuration Protocol (DHCP), Domain Name System (DNS), File Transfer Protocol (FTP), Hypertext Transfer Protocol (HTTP), HTTP over TLS / SSL / Secure, Internet Message Access Protocol (IMAP), Network Time Protocol (NTP), Simple Mail Transfer Protocol (SMTP), Telnet, Transport Layer Security (TLS), Secure Sockets Layer (SSL), Internet Protocol (IP), Transmission Control Protocol (TCP), User Datagram Protocol (UDP), Datagram Congestion Control Protocol (DCCP), Stream Controlled Transmission Protocol (SCTP), and / or Hypertext Markup Language (HTML).

[0129] Through these communication standards and protocols, the computing entity 10 can communicate with various other entities using concepts such as unstructured supplemental service information / data (USSD), short message service (SMS), multimedia messaging service (MMS), dual-tone multi-frequency signaling (DTMF), and / or subscriber identification module dialer (SIM dialer). The computing entity 10 can also download, for example, changes, add-ons, and updates to its firmware, software (e.g., executable instructions, applications, program modules), and operating system. In various embodiments, the computing entity 10 includes a network interface 820 configured to communicate over one or more wired and / or wireless networks 20.

[0130] In various embodiments, the processing device 808 may comprise processing elements, programmable logic devices (CPLDs), microprocessors, coprocessing entities, application-specific instruction set processors (ASIPs), integrated circuits, application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), programmable logic arrays (PLAs), hardware accelerators, and / or other processing units and / or circuits. The term "circuit" can refer to an embodiment of hardware as a whole, or a combination of hardware and computer program products.

[0131] The computing entity 10 may also include a user interface device having one or more user input / output interfaces (e.g., a display device 816 and / or a speaker / speaker driver coupled to the processing device 808, as well as a touchscreen, keyboard, mouse, and / or microphone coupled to the processing device 808). For example, the user output interface may be configured to provide applications, browsers, user interfaces, interfaces, dashboards, screens, web pages, pages, and / or similar terms as used herein, which are replaceable in the computing entity 10 and / or accessible through the computing entity 10, for the purpose of displaying or audibly presenting information / data, and for interaction via one or more user input interfaces. The user input interface may include any of several devices that cause the computing entity 10 to receive data, such as a keypad 818 (hard or soft), a touch display, a voice / conversation or motion interface, a scanner, a reader, or other input device. In embodiments including a keypad 818, the keypad 818 may include (or bring to display) other keys conventionally used to operate the computing entity 10, such as numbers (0-9), associated keys (#, *), and other keys, and may include a set of keys that can be activated to provide a complete set of alphabet keys or a complete set of alphanumeric keys. In addition to providing input, the user input interface may be used to activate or deactivate specific functions, such as a screen saver and / or sleep mode. Through such input, the computing entity 10 can collect information / data and / or user interaction / input, etc.

[0132] The computing entity 10 may also include volatile storage devices or memories 822 and / or non-volatile storage devices or memories 824, which may be embedded and / or removable. For example, non-volatile memory may be ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, memory stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, and / or racetrack memory. Volatile memory may be RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, and / or register memory. The volatile and non-volatile storage devices or memories may store databases, database instances, database management system entities, data, applications, programs, program modules, scripts, source code, object code, bytecode, compiled code, interpreted code, machine code, and / or executable instructions for performing the functions of the computing entity 10.

[0133] conclusion Many variations and other embodiments of the invention described herein, having the benefits of the teachings presented in the foregoing description and the associated drawings, will be conceivable to those skilled in the art. It is therefore understood that the invention is not limited to the specific embodiments disclosed, and that variations and other embodiments are intended to fall within the scope of the appended claims. Certain terms are used herein, but they are used only for general descriptive purposes and not for limiting purposes. [Explanation of Symbols]

[0134] 10 Computing Entities 20 Networks 30 Control device 40 Cryostat room, vacuum room, low-temperature room 50 Voltage supply source 64, 64A, 64B, 64C operation source 66, 66A, 66B, 66C beam path 70 Magnetic field generator 70A Internal Magnetic Field Generator 70B External Magnetic Field Generator 80 Optical Acquisition System 100 Quantum Computer Systems 110 Quantum Computers 125 detectors 200 Atomic Object Confinement Device 201 Confinement Region 205 Longitudinal axis 210 RF Null Axis 211, 211A, 211B Longitudinal axis 212, 212A, 212B RF electrode 214, 214A, 214B, 214C Control electrodes in sequence 216 Control electrodes 302 Object Axes 305 Target location 310 Object Crystals 312 The first atomic object 314 Second Atomic Object 320 Bonding power 502 Axial motion modes governed by the motion of the first atomic object 504 Radial motion modes governed by the motion of the first atomic object 512 Axial motion modes governed by the motion of a second atomic object 514 Other radial motion modes governed by the motion of the second atomic object 520 Degenerate points 530 Transition window 605 Processing Devices 610 memory 615 Drive unit control device element 620 Communication Interfaces 625 A / D converter, analog-to-digital converter element 804 Transmitter 806 Receiver 808 Processing Devices 812 Antenna 816 Display device 818 Keypad 820 Network Interfaces 822 Volatile storage devices or memory 824 Non-volatile storage devices or memory A max Maximum amplitude d Object crystal length d0 initial length d f Final length t0 initial time t1 First period t2 Second time t3 Third time t f Last time

Claims

1. A method for cooling an object crystal comprising at least two atomic objects and confined by a confinement device, A step of controlling one or more voltage sources to shorten the object crystal length, wherein the object crystal length is measured in a direction parallel to the radio frequency (RF) null axis determined by the confinement device at the location of the object crystal; A step of controlling one or more voltage sources such that the object crystal experiences a coupling force that increases to a maximum amplitude and then decreases from the maximum amplitude to zero, wherein the coupling force includes at least a component in a direction radial to the RF null axis. Includes, A method wherein, while the object crystal is experiencing a non-zero bonding force, the shortening of the object crystal length causes the first mode of motion to degenerate into the second mode of motion so that phonons can be adiabatically transferred between the first mode of motion of the object crystal and the second mode of motion of the object crystal.

2. The method according to claim 1, further comprising the step of controlling one or more operating sources to perform laser cooling of the first motion mode of the object crystal before controlling the one or more voltage sources to shorten the object crystal length and allow the object crystal to experience the bonding force.

3. The method according to claim 1, further comprising the step of controlling one or more operating sources to perform laser cooling of the first motion mode of the object crystal after the coupling force has decreased to the amplitude of zero.

4. The method according to claim 3, further comprising the step of controlling the one or more voltage sources for at least one of the following: (a) stopping the shortening in dimension of the object crystal length so that the object crystal length is maintained at a final length, or (b) increasing the object crystal length to a length greater than the final length, after the coupling force has decreased to the amplitude of zero, before controlling the one or more operating sources to perform laser cooling of the first motion mode of the object crystal.

5. The method according to claim 3, wherein the one or more voltage sources and the one or more operating sources are controlled to repeatedly perform (a) adiabatically transfer phonons between the first motion mode and the second motion mode, and (b) laser-cool the first motion mode.

6. The method according to claim 1, wherein the phonons are transferred adiabatically between the first and second motion modes by transferring one or more phonons from the second motion mode to an intermediate motion mode, and transferring one or more phonons from the intermediate motion mode to the first motion mode.

7. The method according to claim 1, wherein the at least two atomic objects comprise a first atomic object of a first atomic object type and a second atomic object of a second atomic object type, wherein the first atomic object type is different from the second atomic object type.

8. The method according to claim 1, wherein the coupling force increases to the maximum amplitude over a first time period, and decreases from the maximum amplitude to the zero amplitude over a second time period, and the first and second time periods are longer than the reciprocal of the difference between the motor mode frequency of the first motor mode and the motor mode frequency of the second motor mode.

9. The method according to claim 1, wherein the bonding force is one of the following: (a) a radial push, (b) a torque caused by a shim field in a plane parallel to the plane defined by the confinement device, or (c) a higher-order (e.g., third-order, fourth-order) differential term in the potential generated by the confinement device at the location of the object crystal.

10. A method for laser cooling an object crystal comprising at least two atomic objects and confined by a confinement device, A step of controlling one or more operating sources to cause one or more first examples of operating signals to be incident on a target location at least partially determined by the confinement device, wherein the one or more first examples of operating signals are configured to laser-cool a first mode of motion of the object crystal, and the confinement device operates to confine the object crystal at the target location; The steps include causing an adiabatic transfer of phonons from a second motion mode of the object crystal to a first motion mode of the object crystal, A step of controlling one or more operating sources to cause a second example of one or more operating signals to be incident on the target location, wherein the second example of one or more operating signals is configured to laser-cool a first mode of motion of the object crystal; Methods that include...

11. The method according to claim 10, wherein the adiabatic transfer of phonons from the second motion mode to the first motion mode is carried out via phonon fast adiabatic passage.

12. The aforementioned phonon fast adiabatic passage means that To shorten the object crystal length of the object crystal, control one or more voltage sources, Controlling one or more voltage sources such that the object crystal experiences a coupling force that increases to a maximum amplitude and then decreases from the maximum amplitude to zero, Includes, The method according to claim 11, wherein, while the object crystal is experiencing a non-zero bonding force, the shortening of the object crystal length causes the first mode of motion to degenerate into the second mode of motion so that phonons are adiabatically transferred between the first mode of motion of the object crystal and the second mode of motion of the object crystal.

13. The method of claim 12, further comprising the step of controlling the one or more voltage sources for at least one of the following: (a) stopping the shortening in dimension of the object crystal length so that the object crystal length is maintained at a final length, or (b) increasing the object crystal length to a length longer than the final length, after the coupling force has decreased to the amplitude of zero, before controlling the one or more operating sources to cause the second example of the one or more operating signals to be incident at the target location.

14. The method according to claim 12, wherein the one or more voltage sources and the one or more operating sources are controlled to repeatedly perform (a) adiabatically transfer phonons between the first motion mode and the second motion mode, and (b) laser-cool the first motion mode.

15. The method according to claim 12, wherein the coupling force increases to the maximum amplitude over a first time period, and decreases from the maximum amplitude to the zero amplitude over a second time period, and the first and second time periods are longer than the reciprocal of the difference between the motor mode frequency of the first motor mode and the motor mode frequency of the second motor mode.

16. The method according to claim 10, wherein the phonons are transferred adiabatically between the first and second motion modes by transferring one or more phonons from the second motion mode to an intermediate motion mode, and transferring one or more phonons from the intermediate motion mode to the first motion mode.

17. The method according to claim 10, wherein the at least two atomic objects comprise a first atomic object of a first atomic object type and a second atomic object of a second atomic object type, wherein the first atomic object type is different from the second atomic object type.

18. The method according to claim 10, wherein the adiabatic transfer of the phonon takes less than 100 microseconds.

19. A confinement device configured to confine an object crystal having at least two atomic objects and to define a target location in at least part of it, One or more operating sources configured to generate and provide one or more operating signals, In the aforementioned system, The confinement device confines the object crystal at the target location. Injecting one or more of the first examples of the control signals into the target location, wherein the first examples of the one or more control signals are configured to laser-cool a first mode of motion of the object crystal, To induce an adiabatic transfer of phonons from the second motion mode of the object crystal to the first motion mode of the object crystal, and Injecting a second example of the one or more control signals into the target location, wherein the second example of the one or more control signals is configured to laser-cool the first mode of motion of the object crystal, To at least carry out the above, a control device configured to control the operation of the confinement device and the one or more operating sources, A system equipped with these features.

20. The control device further comprises one or more voltage sources operably coupled to each electrode of the confinement device, and the control device to the system A voltage signal is provided to each of the electrodes to shorten the object crystal length of the object crystal, and A coupling signal is provided to at least one of the electrodes such that the object crystal experiences a coupling force that increases to a maximum amplitude and then decreases from the maximum amplitude to zero. To at least carry out the above, the operation of one or more voltage sources is controlled, The system according to claim 19, wherein, while the object crystal is experiencing a non-zero bonding force, the shortening of the object crystal length causes the first mode of motion to degenerate into the second mode of motion so that phonons are adiabatically transferred between the first mode of motion of the object crystal and the second mode of motion of the object crystal.

21. The system according to claim 19, wherein the system is a quantum computer, at least one of the at least two atomic objects of the object crystal is used as a qubit of the quantum computer, and at least the other of the at least two atomic objects of the object crystal is used to resonantly cool the qubit.

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