Opaque thermal layer for silicon carbide substrates

Abstract

A method for heat-treating an optically opaque substrate using radiant energy. In some embodiments, the method includes inverting the optically opaque substrate to expose an unstructured surface, depositing an opaque thermal layer on the unstructured surface of the optically opaque substrate, wherein the opaque thermal layer has a uniform thickness, inverting the optically opaque substrate to expose a structured surface, and heat-treating the optically opaque substrate at a temperature greater than about 900°C. In some embodiments, the opaque thermal layer consists of amorphous carbon, a plurality of amorphous carbon layers in which adjacent layers have different optical properties, or alternating layers of different materials, wherein the first layer of the alternating layers is composed of an amorphous carbon material and the second layer of the alternating layers is composed of an amorphous silicon (Si)-based material.

Description

[Technical Field]

[0001] Embodiments of the principle of the present invention generally relate to semiconductor processing of semiconductor substrates. [Background technology]

[0002] Substrates are often heated during processing. Heating of the substrate is generally achieved using a lamp that radiates energy absorbed by the substrate, thereby raising the substrate temperature. However, if the substrate material is transparent rather than opaque, radiated energy is not absorbed by the substrate. Therefore, for transparent substrates, a lamp is not an efficient way to heat the substrate. Instead, transparent substrates are heated using conductive heating with a heated substrate support, i.e., a susceptor. However, the inventors have observed that using a conductive heating surface results in uneven heating and particle generation of transparent substrates.

[0003] Therefore, the present inventors provide a method for heating an optically nonopaque substrate with improved thermal controllability. [Overview of the project]

[0004] This specification provides a method for improving temperature control of a transparent substrate.

[0005] In some embodiments, a method for processing an optically opaque substrate may include providing an optically opaque substrate having a structural surface and an unstructured surface, and depositing an opaque thermal layer on the entire unstructured surface of the optically opaque substrate, wherein the opaque thermal layer has substantially uniform thickness and can withstand heat treatment above about 900°C.

[0006] In some embodiments, the method may further include: treating an optically opaque substrate, which is a silicon carbide substrate, with an opaque thermal layer, wherein the optically opaque substrate is subjected to a heat treatment exceeding approximately 1300°C, a structure is formed on the structural surface of the optically opaque substrate, and removing the opaque thermal layer by back grinding of the optically opaque substrate, wherein at least one of the structures includes the gate of a power transistor, the heat treatment is approximately 1650°C or higher, and the opaque thermal layer The opaque thermal layer is composed of amorphous carbon, and the opaque thermal layer is composed of multiple layers of amorphous carbon material, with adjacent layers having different optical properties, and the opaque thermal layer is composed of alternating layers of different materials, the first layer of the alternating layers is tuned to absorb a first wavelength range, and the second layer of the alternating layers below the first layer is tuned to reflect a first wavelength range to the first layer, the first layer of the alternating layers is composed of amorphous carbon material, and the second layer of the alternating layers is composed of amorphous silicon (Si)-based material, and the amorphous silicon (Si)-based material is amorphous SiH x Amorphous SiCxH y amorphous SiC x N y H z amorphous SiO x H y , or amorphous SiCONH, the heat treatment includes radiant energy from at least one lamp-based energy source, the heat treatment is at approximately 1850°C or higher, the opaque heat layer consists of multiple layers, each of which is tuned to absorb a different wavelength range, the different wavelength ranges overlap, the opaque heat layer is tuned to absorb a first wavelength range that is smaller than but within the range of a second wavelength range emitted from an infrared radiator in the processing chamber, and / or the opaque heat layer is tuned to absorb a wavelength range emitted from an infrared radiator in the processing chamber.

[0007] In some embodiments, a non-transient computer-readable medium having instructions that, when executed, cause a method for thermally treating an optically opaque substrate, the method may include providing an optically opaque substrate having a structural surface and an unstructured surface, and depositing an opaque thermal layer over the entire unstructured surface of the optically opaque substrate, wherein the opaque thermal layer is of uniform thickness, can withstand temperatures up to about 2000 degrees, and absorbs radiant energy from a lamp-based energy source.

[0008] In some embodiments, the method for a non-temporary computer-readable medium includes an opaque thermal layer composed of amorphous carbon, and / or an opaque thermal layer composed of multiple layers of amorphous carbon material and adjacent layers of multiple layers having different optical properties, or an opaque thermal layer composed of alternating layers of different materials, wherein the first layer of the alternating layers is composed of amorphous carbon material and the second layer of the alternating layers is composed of amorphous silicon (a-Si)-based material.

[0009] Further embodiments are disclosed below.

[0010] Embodiments of the principle of the present invention, which have been briefly summarized above and described in more detail below, can be understood by referring to exemplary embodiments of the principle shown in the accompanying drawings. However, since the principle may allow for other equally effective embodiments, the accompanying drawings illustrate only typical embodiments of the principle and should not be considered limiting in scope. [Brief explanation of the drawing]

[0011] [Figure 1] A figure illustrating a method for processing an optically opaque substrate according to several embodiments of the principles of the present invention. [Figure 2] Cross-sectional view of processing an optically opaque substrate according to several embodiments of the principle of the present invention. [Figure 3]Figure illustrating a method for depositing an opaque thermal layer in accordance with some embodiments of the principles of the present invention [Figure 4] Cross-sectional view during deposition of an opaque thermal layer on a non-optically opaque substrate in accordance with some embodiments of the principles of the present invention [Figure 5] Figure illustrating a method for depositing an opaque thermal layer in accordance with some embodiments of the principles of the present invention [Figure 6] Cross-sectional view during deposition of an opaque thermal layer on a non-optically opaque substrate in accordance with some embodiments of the principles of the present invention [Figure 7] Top view of an integrated tool in accordance with some embodiments of the principles of the present invention DESCRIPTION OF EMBODIMENTS

[0012] For ease of understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. The drawings are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0013] The present method provides improved temperature control for heat treatment of non-optically opaque substrates. Control of temperature ramp is significantly improved in both temperature increase and decrease compared to conductive heating methods. Incorporation of an opaque thermal layer on the back side of a transparent substrate allows the transparent substrate to be heated using radiant energy from a lamp rather than a conductive heating source. The opaque thermal layer can be tuned based on composition and thickness to absorb light, particularly light in the infrared (IR) band, which is the most efficient method for heating a substrate. Furthermore, the opaque thermal layer provides good mechanical and friction properties, protecting the transparent substrate when interacting with an end effector during movement of the transparent substrate. Therefore, the opaque thermal layer remains integrated with the transparent substrate during the overall processing flow of the transparent substrate until the final backside polishing step is completed and the opaque thermal layer is removed.

[0014] Silicon carbide (SiC) materials are becoming increasingly popular in power devices such as power transistors. SiC substrates are not optically opaque and can vary in appearance from crystal-clear (optically transparent) to yellowish-transparent (optically translucent) depending on the dopant level of the SiC substrate. In some embodiments, the SiC substrate is optically transparent. In some embodiments, the SiC substrate is optically translucent. In some embodiments, the SiC substrate can be a region of the substrate that varies between optically transparent and optically translucent regions. Processing SiC substrates requires temperatures exceeding 1500°C, which is much higher than that of typical silicon substrates. Many front-end processes, including gate dielectric deposition, epitaxial growth, fast thermal processing (RTP), and silicon compound formation, are heat treatment processes that use lamps to heat the substrate. However, because SiC substrates are optically transparent, heating by the radiant energy of lamps is inefficient when using SiC substrates. High-voltage MOSFETs built on SiC substrates are susceptible to scratch damage when handled by robotic arms and blades. In the semiconductor industry, susceptors have traditionally been used as heat absorbers to indirectly heat SiC substrates through conduction. However, conductive heating is inefficient, and especially in the high-temperature range exceeding 1300°C, it causes problems such as temperature non-uniformity and particle generation.

[0015] FIG. 1 is a method 100 for processing a non-optically-opaque substrate 202 as shown in view 200A of FIG. 2. The non-optically-opaque substrate 202 has a structural surface 204 on which a semiconductor structure is formed, and a non-structural surface 206 on which no structure is formed or a back side (non-structural surface) of the non-optically-opaque substrate 202. The structure may include a power transistor structure including a gate dielectric material, and a poly-Si gate or a metal gate, etc. The gate structure may be subjected to high-temperature doping / implantation and other processing in the formation of transistors. In some embodiments, the non-optically-opaque substrate 202 is formed of a SiC material. In block 102, as shown in view 200B of FIG. 2, the non-optically-opaque substrate 202 is flipped over, exposing the non-structural surface 206 of the non-optically-opaque substrate 202. In block 104, as shown in view 200C of FIG. 2, an opaque heat layer 208 is deposited on the non-structural surface 206 of the non-optically-opaque substrate 202. The opaque heat layer 208 becomes an integral part of the non-optically-opaque substrate 202 during processing of the non-optically-opaque substrate 202. In some embodiments, the opaque heat layer 208 covers the entire non-structural surface of the non-optically-opaque substrate 202. In some embodiments, the opaque heat layer 208 covers a substantial portion of the entire non-structural surface 206 of the non-optically-opaque substrate 202.

[0016] The opaque thermal layer 208 has a substantially uniform thickness 220, whether in a single-layer or multi-layer configuration (multi-layer configurations will be discussed later). In some embodiments, the uniform thickness 220 has a thickness variation of about ±10% or less. In some embodiments, the uniform thickness 220 has a thickness variation of about ±5% or less. In some embodiments, the uniform thickness 220 has a thickness variation of about ±2% or less. In some embodiments, the uniform thickness 220 has a thickness variation of about ±1% or less. The opaque thermal layer 208 provides thermal control of the optically opaque substrate 202 and also protects the optically opaque substrate 202 from robotic arms and end effectors during transport. In some embodiments, the optically opaque substrate 202 has one or more materials deposited on the optically opaque substrate 202 in one or more deposition chambers using one or more chemical vapor deposition (CVD) or plasma CVD (PECVD) processes as discussed below. The chemical composition of one or more deposits and / or the thickness of the deposits can be used to alter the optical properties of the opaque thermal layer 208, thereby allowing for further control of the temperature of the optically opaque substrate 202 during subsequent processing.

[0017] In block 106, as shown in display 200D of Figure 2, the optically opaque substrate 202 is inverted to expose the structural surface 204 of the optically opaque substrate 202 (e.g., diodes and / or MOSFET transistors). In block 108, the optically opaque substrate 202 undergoes processing including heat treatment above 900°C. For example, silicon compound formation of source contacts may reach temperatures of about 900°C to about 1100°C, dopant activation annealing may reach temperatures of about 1600°C to about 1800°C, and epitaxial processes may reach temperatures of about 1600°C to about 2000°C. In some embodiments, injection or doping into the optically opaque substrate 202 is part of the processing, and the optically opaque substrate 202 may be heated to temperatures of 1650°C or higher. In some embodiments, the temperature may be 1850°C or higher for shorter periods of time. In some embodiments, the temperature may reach about 2000°C for very short periods of time. The advantages of short-time annealing at high temperatures include improved dopant activation levels, suppression of the growth of certain crystal defects, and realization of a desired dopant profile. For example, high annealing temperatures are required to activate dopants in materials such as SiC in a SiC substrate. The process may include other processes such as structuring, etching, and / or deposition to complete the final optically opaque substrate. In block 110, the optically opaque substrate undergoes a planarization process, such as a back-side grinding process to remove an integrated opaque thermal layer, as shown in Figure 2, diagram 200E, for example. The opaque thermal layer 208 is integrated as part of the substrate and functions as both a thermal controller and a protective layer for the substrate to minimize particle generation and damage to the back side of the substrate during processing. After the processing of the substrate is complete, the opaque thermal layer 208 may be left in place or removed to expose, for example, back-side contacts.

[0018] FIG. 3 is a method 300 (i.e., the first method of block 104) for depositing an opaque heat layer 208 onto a non-optically opaque substrate 202 after flipping the substrate. The opaque heat layer 208 may be formed as a single layer of a single composition having a single set of optical properties that affects temperature control across the non-optically opaque substrate 202, as shown in representations 200C and 200D of FIG. 2. In such cases, the opaque heat layer 208 absorbs radiant energy from a lamp light source within a heating chamber, depending on the thickness and composition of the materials that constitute the opaque heat layer 208. In method 300, although a single material is used, different layers have different optical properties. At block 302, as shown in representation 400 of FIG. 4, a first layer 402 of the opaque heat layer 208 is deposited onto the non-optically opaque substrate 202. In some embodiments, the first layer 402 may be an a-C layer having a first set of optical properties.

[0019] At block 304, as shown in representation 400 of FIG. 4, a second layer 404 of the opaque heat layer 208 is deposited onto the non-optically opaque substrate 202. At block 306, during deposition of the second layer 404, the optical properties of the second layer 404 are changed. Optical properties include, but are not limited to, the refractive index (RI) or n-value of the layer and the extinction coefficient or k-value of the layer. a-C or amorphous SiC x H yThese are some examples, but are not limited to these. By changing the amount or type of precursor during the deposition of similar materials, the optical properties can be altered during deposition. For example, the optical properties (n and k values) of an aC:H film can be adjusted by changing the hydrogen content and carbon-carbon bond configuration (sp2 or sp3), etc. In some embodiments, the second layer 404 may be an aC layer having a second set of optical properties different from the first set of optical properties. In block 308, the deposition process can be repeated any number of times until the desired overall thermal control is achieved by changing the thickness of the layers and / or the optical properties of the layers (e.g., layers 402A, 404A, etc.). In some embodiments, to provide protection to an optically non-opaque substrate 202, the top layer when the substrate is inverted is aC or amorphous SiC. x H y These are materials that provide a smooth, hard surface, but are not limited to these.

[0020] Due to the different optical properties of each layer, incident infrared radiation is absorbed at different frequencies in each layer, and the resulting heat is conducted through the layers to the optically opaque substrate 202, enabling multi-wavelength heating of the substrate. On the other hand, in the case of a single opaque thermal layer, the optical properties of the opaque thermal layer will absorb a smaller infrared wavelength range, resulting in less heat conduction to the optically opaque substrate and a decrease in the heating performance of the opaque thermal layer. Another advantage of using a single material with different optical properties in a multilayer format is that multiple layers can be deposited using a single chamber, and the thermal performance and wavelength range of the opaque thermal layer can be improved. In some embodiments, the optical properties of the first layer 402 can be adjusted to absorb a first infrared wavelength range. The optical properties of the second layer 404 can be adjusted to reflect the first infrared wavelength range to the first layer 402. The reflection of a first infrared wavelength range by the second layer 404 to the first layer 402 increases the absorption efficiency of the first layer 402, and as a result, the conduction heating efficiency of the optically opaque substrate 202 increases. In some embodiments, the optical properties of the first layer 402 can be adjusted to absorb a first infrared wavelength range, and the optical properties of the second layer 404 can be adjusted to absorb a second infrared wavelength range. By combining the absorption of the first infrared wavelength range with the absorption of the second infrared wavelength range, for example, in multiple chambers (multiple processing steps, etc.) operating at different infrared frequencies, the opaque heat layer 208 can provide heat conduction to the optically opaque substrate 202 without requiring any modifications to the opaque heat layer 208, thereby saving time and cost.

[0021] Figure 5 shows a method 500 in which an opaque thermal layer 208 is deposited on an optically opaque substrate 202 after the substrate has been inverted (i.e., the first method of block 104). In method 500, the alternating layers are made of multiple materials, each having different optical properties. In block 502, as shown in Figure 6, a first layer 602 of the opaque thermal layer 208 is deposited on an optically opaque substrate 202. In some embodiments, the first layer 602 may be an aC layer having a first set of optical properties. In block 504, as shown in Figure 6, a second layer 604 of the opaque thermal layer 208 is deposited on an optically opaque substrate 202. In some embodiments, the second layer 604 may be amorphous SiH x amorphous SiC x H y amorphous SiC x N y H z amorphous SiO x H y This includes, but is not limited to, amorphous silicon-based materials such as amorphous SiCONH.

[0022] During the deposition of the first layer 602 or the second layer 604, the optical properties of the layers can be further altered in addition to the optical properties of the individual materials to further provide thermal control of the optically opaque substrate 202. The optical properties include, but are not limited to, the refractive index (n) or extinction coefficient (k) of the layer. The optical properties can be altered during deposition by changing the amount or type of precursor. In block 506, the deposition process can be repeated any number of times (e.g., layers 602A, 604A, etc.) until the desired overall thermal control is achieved by changing the thickness of the layers and / or the optical properties of the layers. In some embodiments, each layer of the same material may have different or the same thickness. In some embodiments, to provide protection to the optically opaque substrate 202, the top layer when the substrate is inverted is, but is not limited to, a material that provides a smooth, hard surface, such as aC. Due to the different optical properties of each layer, incident infrared waves are absorbed at different frequencies in each layer, heat is conducted to the optically opaque substrate 202, and multi-wavelength heating of the substrate is possible.

[0023] In some embodiments, the optical properties of the first layer 602 can be adjusted to absorb a first infrared wavelength range. The optical properties of the second layer 604 can be adjusted to reflect the first infrared wavelength range to the first layer 602. The reflection of the first infrared wavelength range to the first layer 602 by the second layer 604 increases the absorption efficiency of the first layer 602, and as a result, the conduction heating efficiency of the optically opaque substrate 202 increases. In some embodiments, the optical properties of the first layer 602 can be adjusted to absorb a first infrared wavelength range, and the optical properties of the second layer 604 can be adjusted to absorb a second infrared wavelength range. By combining the absorption of the first infrared wavelength range with the absorption of the second infrared wavelength range, for example, in multiple chambers (multiple processing steps, etc.) operating at different infrared frequencies, the opaque heat layer 208 can provide heat conduction to the optically opaque substrate 202 without requiring any modifications to the opaque heat layer 208, thereby saving time and costs.

[0024] Using different materials for multiple layers of an opaque thermal layer has the advantage of allowing for greater control over multiple layers while using a single material with different optical properties. For example, an aC:H material may have a refractive index of about 1.6 to about 1.94 and an extinction coefficient of about 0.03 to about 0.65. An a-Si:H material may have a refractive index of about 3.3 to about 4.5 and an extinction coefficient of about 0.019 to about 0.24. x N y H z The material can have a refractive index ranging from approximately 1.95 to approximately 2.4. SiC x H y The material may have a refractive index of approximately 2.1 to approximately 2.6 and an extinction coefficient of approximately 0. SiC x N y H z The materials may have a refractive index of approximately 2.0 to approximately 2.2. By varying the material of the layers and the optical properties of the materials, an opaque thermal layer having multiple layers of multiple materials will have a significant advantage over an opaque thermal layer having multiple layers of a single material or a single-layer opaque thermal layer in terms of the flexibility of adjustment for controlling the thermal properties of an optically opaque substrate. Multiple layers of different materials can be deposited using different chambers, but the deposition process can be achieved using a single integrated tool, such as the integrated tool shown in Figure 7, though this is not limited to the process. The tunability of the principle of the present invention makes it possible to easily change the opaque thermal layer on a per-substrate or per-chamber basis, based on the infrared heating wavelength of the substrate and / or chamber, etc.

[0025] The opaque thermal layer 208 is tunable using the method described above and achieves overall optical properties that enable a precise temperature response to the optically opaque substrate 202. When the optically opaque substrate 202 is placed in a heating chamber using radiant energy as the heat source, the radiant energy passes through the optically opaque substrate 202, resulting in minimal temperature changes for the substrate. When the opaque thermal layer 208 is integrated with the optically opaque substrate 202, it blocks the radiant energy passing through the optically opaque substrate 202, allowing for predictable control of how the radiant energy from the lamp is converted into thermal energy that flows back into the optically opaque substrate 202. The opaque thermal layer 208 enables a rapid and accurate response to changes in radiant energy and allows for transfer to the optically opaque substrate that cannot be achieved by the use of conductive heaters such as heating susceptors. In some embodiments, the opaque heat layer 208 can have optical properties tuned to the IR frequency range of the lamp used in the rapid temperature process (RTP) chamber, thereby improving the heating efficiency and temperature change control speed (response time) of the optically opaque substrate 202.

[0026] The methods described herein can be carried out in individual processing chambers or in a cluster tool such as the integrated tool 700, which will be described later with respect to Figure 7. The advantage of using the integrated tool 700 is that there is no vacuum disruption and virtually no process delay between depositions. The integrated tool 700 comprises a vacuum-sealed processing platform 701, a factory interface 704, and a system controller 702. The processing platform 701 comprises several processing chambers, such as 714A, 714B, 714C, 714D, 714E, 714F, and 714G, which are operably connected to the vacuum substrate transfer chambers (transfer chambers 703A, 703B). The factory interface 704 is operably connected to the transfer chamber 703A by one or more load lock chambers (two load lock chambers, such as 706A and 706B shown in Figure 7).

[0027] In some embodiments, the factory interface 704 includes at least one docking station 707 and at least one factory interface robot 738 to facilitate the transfer of semiconductor substrates. The docking station 707 is configured to receive one or more forward-opening unified pods (FOUPs). Three FOUPs, such as 705A, 705B, and 705C, are shown in the embodiment of Figure 7. The factory interface robot 738 is configured to transfer substrates from the factory interface 704 to the processing platform 701 via load lock chambers such as 706A and 706B. Each of the load lock chambers 706A and 706B has a first port connected to the factory interface 704 and a second port connected to the transfer chamber 703A. The load lock chambers 706A and 706B are connected to a pressure control system (not shown) that pumps down and vents the load lock chambers 706A and 706B to facilitate the passage of substrates between the vacuum environment of the transfer chamber 703A and the substantially ambient (e.g., atmospheric) environment of the factory interface 704. The transfer chambers 703A and 703B are equipped with vacuum robots 742A and 742B, respectively, located in the transfer chambers 703A and 703B. Vacuum robot 742A enables the transfer of substrates 721 between the load lock chambers 706A and 706B, the processing chambers 714A and 714G, and the cooling station 740 or the pre-washing station 742. Vacuum robot 742B enables the transfer of substrates 721 between the cooling station 740 or the pre-washing station 742 and the processing chambers 714B, 714C, 714D, 714E, and 714F.

[0028] In some embodiments, processing chambers 714A, 714B, 714C, 714D, 714E, 714F, and 714G are connected to transfer chambers 703A, 703B. Processing chambers 714A, 714B, 714C, 714D, 714E, 714F, and 714G may include a pre-cleaning chamber, a CVD chamber, a PECVD chamber, an ALD chamber, a rapid temperature process (RTP) chamber, and / or a PVD chamber. The processing chambers may include any chamber suitable for carrying out all or part of the methods described herein, as described above. In some embodiments, one or more optional service chambers (indicated as 716A and 716B) may be connected to transfer chamber 703A. Service chambers 716A and 716B may be configured to perform other substrate processing, such as degassing, orientation, substrate measurement, and cooling.

[0029] The system controller 702 controls the operation of the tool 700 by directly controlling the processing chambers 714A, 714B, 714C, 714D, 714E, 714F, and 714G, or by controlling the computer (or controller) associated with the processing chambers 714A, 714B, 714C, 714D, 714E, 714F, and 714G and the tool 700. During operation, the system controller 702 enables data collection and feedback from each chamber and system to optimize the performance of the tool 700. The system controller 702 generally comprises a central processing unit (CPU) 730, memory 734, and support circuits 732. The CPU 730 can be any form of general-purpose computer processor that can be used in an industrial environment. The support circuits 732 are conventionally connected to the CPU 730 and may include a cache, clock circuit, input / output subsystem, power supply, etc. Software routines such as those described above are stored in memory 734 and executed by CPU 730, which can then transform CPU 730 into a computer for a specific purpose (system controller 702). The software routines can also be stored and / or executed by a second controller (not shown) located away from tool 700.

[0030] Memory 734 takes the form of a computer-readable storage medium containing instructions for facilitating the operation of semiconductor processes and apparatus when executed by the CPU 730. The instructions in memory 734 take the form of a program product, such as a program that implements the method of the principle of the present invention. The program code may conform to one of a number of different programming languages. In one example, this disclosure can be implemented as a program product stored on a computer-readable storage medium for use in a computer system. The program(s) of the program product define the functions relating to the aspects (including the method described herein). Exemplary computer-readable storage media include, but are not limited to,: non-writable storage media on which information is permanently stored (e.g., read-only memory devices in a computer, such as CD-ROM disks readable by a CD-ROM drive, flash memory, ROM chips, or any type of solid non-volatile semiconductor memory); and writable storage media on which modifiable information is stored (e.g., floppy disks in a diskette drive or hard disk drive, or any type of solid random-access semiconductor memory). Such a computer-readable storage medium is an aspect of the principle of the present invention if it stores computer-readable instructions that direct the functions of the method described herein.

[0031] Embodiments of the present invention can be implemented in hardware, firmware, software, or any combination thereof. Embodiments can also be implemented as stored instructions using one or more computer-readable media, which can be read and executed by one or more processors. The computer-readable media may include any mechanism for storing or transmitting information in a machine-readable format (e.g., a computing platform, or a “virtual machine” operating on one or more computing platforms). For example, the computer-readable media may include any suitable form of volatile or non-volatile memory. In some embodiments, the computer-readable media may include non-temporary computer-readable media.

[0032] The above describes embodiments of the principle of the present invention, but other embodiments and further embodiments of the principle can be devised without departing from the basic scope of the principle.

Claims

1. A method for processing an optically opaque substrate, To provide an optically opaque substrate having a structural surface and a non-structural surface, and The method involves depositing an opaque thermal layer on the entire unstructured surface of the optically opaque substrate, wherein the deposited opaque thermal layer has substantially uniform thickness and can withstand heat treatment exceeding approximately 900°C. Methods that include...

2. The method according to claim 1, wherein the optically opaque substrate is a silicon carbide substrate.

3. The process of treating the optically opaque substrate with the opaque heat layer, wherein the optically opaque substrate is subjected to heat treatment exceeding approximately 1300°C, and a structure is formed on the structural surface of the optically opaque substrate, and The optically opaque substrate is back-ground to remove the opaque thermal layer. The method according to claim 1, further comprising:

4. The method according to claim 3, wherein at least one of the structures includes the gate of a power transistor.

5. The method according to claim 1, wherein the heat treatment is performed at a temperature of approximately 1650°C or higher.

6. The method according to claim 1, wherein the opaque thermal layer is composed of amorphous carbon.

7. The method according to claim 1, wherein the opaque thermal layer is composed of a plurality of layers of amorphous carbon material, and adjacent layers of the plurality of layers have different optical properties.

8. The method according to claim 1, wherein the opaque thermal layer is composed of alternating layers of different materials.

9. The method according to claim 8, wherein the first layer of the alternating layers is adjusted to absorb a first wavelength range, and the second layer of the alternating layers located below the first layer is adjusted to reflect the first wavelength range to the first layer.

10. The method according to claim 8, wherein the first layer of the alternating layers is composed of an amorphous carbon material, and the second layer of the alternating layers is composed of an amorphous silicon (Si)-based material.

11. The amorphous silicon (Si)-based material is amorphous SiH ｘ Amorphous SiC x H ｙ amorphous SiC ｘ N ｙ H ｚ amorphous SiO ｘ H ｙ The method according to claim 10, wherein the material is amorphous SiCONH.

12. The method according to claim 1, wherein the heat treatment includes radiant energy from at least one lamp base energy source.

13. The method according to claim 1, wherein the heat treatment is performed at a temperature of approximately 1850°C or higher.

14. The method according to claim 1, wherein the opaque thermal layer is composed of a plurality of layers, and each of the plurality of layers is adjusted to absorb different wavelength ranges.

15. The method according to claim 14, wherein the different wavelength ranges mentioned above overlap.

16. The method according to claim 1, wherein the opaque thermal layer is adjusted to absorb a first wavelength range that is smaller than but within a second wavelength range emitted from an infrared radiator of the processing chamber.

17. The method according to claim 1, wherein the opaque thermal layer is adjusted to absorb a wavelength range emitted from an infrared radiator in the processing chamber.

18. A non-temporary computer-readable medium, the medium having instructions that, when executed, cause a method for thermally treating an optically opaque substrate, the method is To provide an optically opaque substrate having a structural surface and a non-structural surface, and The method involves depositing an opaque thermal layer on the entire unstructured surface of the optically opaque substrate, wherein the deposited opaque thermal layer has substantially uniform thickness, can withstand temperatures up to approximately 2000 degrees, and absorbs radiant energy from the energy source of the lamp base. including, Non-temporary computer-readable media.

19. The non-temporary computer-readable medium according to claim 18, wherein the opaque thermal layer is composed of amorphous carbon.

20. The non-temporary computer-readable medium according to claim 18, wherein the opaque thermal layer is composed of a plurality of layers of amorphous carbon material, and adjacent layers of the plurality of layers have different optical properties, or the opaque thermal layer is composed of alternating layers of different materials, including a first layer of alternating layers composed of amorphous carbon material and a second layer of the alternating layers composed of amorphous silicon (a-Si) material.

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