Plasma processing system including segmented electrodes with floating segments

Abstract

A plasma processing system for processing a substrate is arranged in a processing chamber and includes a substrate support containing a first electrode. A second electrode is positioned above the substrate support and includes S segments arranged concentrically with gaps between them, where S is an integer greater than 1. A segment control circuit includes M impedances connected to M of the S segments of the second electrode, where M is an integer greater than 0 and less than or equal to S. The M impedances are selected from the group consisting of at least one of resistors, inductors, capacitors, and combinations thereof. The plasma generator is configured to supply an RF voltage to the first electrode to generate and maintain plasma within the processing chamber.

Description

Technical Field

[0001] Cross-Reference to Related Applications This application claims the benefit of U.S. Provisional Application No. 63 / 534,950, filed on August 28, 2023, and the benefit of U.S. Provisional Application No. 63 / 625,240, filed on January 25, 2024. The entire disclosure of the above applications is incorporated herein by reference.

[0002] The present disclosure relates to a plasma processing system for substrates, and more particularly to a plasma processing system including segmented electrodes with adjustable impedance for grounding direct current or alternating current and other plasma excitation frequencies. Background Art

[0003] The description of the background art provided herein is for the purpose of generally presenting the context of the present disclosure. To the extent described in this Background section, the inventors' work, as well as aspects of the description that may not be admitted as prior art at the time of filing, are not admitted, either expressly or implicitly, as prior art to the present disclosure.

[0004] A substrate processing system may be used to process a substrate such as a semiconductor wafer. Substrate processing may include deposition, etching, cleaning, and / or other processing. During processing, the substrate is placed on a substrate support within a processing chamber of the substrate processing system. A gas mixture is introduced into the processing chamber using a gas delivery device. In some processes, radio frequency (RF) plasma may be used to initiate chemical reactions.

[0005] When generating plasma, the substrate processing system may include an RF plasma generator comprising an RF source and a matched network that supplies RF voltage / power to a first electrode within the substrate support. The substrate is placed on a substrate support between the first electrode and a second electrode. The second electrode includes a grounded plate. When a grounded electrode is used, the plasma density changes as the radial distance of the substrate changes. Variations in plasma density cause processing non-uniformity. [Overview of the project] [Means for solving the problem]

[0006] A plasma processing system for processing a substrate is arranged in a processing chamber and includes a substrate support containing a first electrode. A second electrode is positioned above the substrate support and includes S segments arranged concentrically with gaps between them, where S is an integer greater than 1. A segment control circuit includes M impedances connected to M of the S segments of the second electrode, where M is an integer greater than 0 and less than or equal to S. The M impedances are selected from the group consisting of resistors, inductors, capacitors, and combinations thereof. A plasma generator is configured to supply an RF voltage to the first electrode to generate and maintain plasma within the processing chamber.

[0007] In other features, at least one of the M impedances has a fixed impedance. At least one of the M impedances has a variable impedance. The plasma density controller is configured to adjust the variable impedance of at least one of the M impedances. At least one of the photon probe and thermocouple is configured to sense the temperature of at least one of the S segments. The plasma density controller is configured to adjust the variable impedance of at least one of the S segments according to the temperature.

[0008] In other characteristics, S is greater than 2 and less than or equal to 6. M is greater than 2 and less than or equal to 6. M is equal to S. M switches are connected in parallel to the M impedances to selectively short-circuit one corresponding of the M impedances and ground one corresponding of the S segments. The M impedances of the M corresponding segments of the S segments are tuned independently for DC and at least one plasma excitation frequency. The plasma generator includes multiple power settings for pulsed plasma. The M impedances of the M corresponding segments of the S segments are tuned for at least two of the multiple power settings.

[0009] In other features, the sides of the S segments are configured to prevent a line of sight from the plasma through the gap. The sides of the S segments are either stepped or inclined. The S segments include gas through-holes. The M impedances include resistors and at least one of inductors and capacitors. The S segments have multiple gas through-holes.

[0010] In other features, the plasma processing system includes a cooling plate and a heating plate positioned adjacent to the cooling plate. A thermal gasket is positioned adjacent to the upper surfaces of S segments and includes holes for gas penetrations and holes for receiving fasteners connected to the S segments into a gas distribution plate. A barrier layer is positioned adjacent to the thermal gasket. The gas distribution plate is positioned between the barrier layer and the heating plate and is in fluid communication with the multiple gas penetrations of the S segments.

[0011] In other features, the thermal gasket comprises multiple zones. At least two of the zones are made of different materials, or at least one has a different thickness. S segments are made of materials selected from the group consisting of silicon, polysilicon, silicon carbide, ceramic, and quartz. At least one of the S segments includes a substrate made of a first material and a plasma-resistant layer disposed on the substrate and made of a second material different from the first material. The substrate is made of materials selected from the group consisting of stainless steel, aluminum, and silicon.

[0012] In other features, the plasma-resistant layer is made of a material selected from the group consisting of silicon, polysilicon, silicon carbide, ceramic, and quartz. The plasma-resistant layer has a thickness in the range of 20 μm to 500 μm. An insulating material is placed in the gaps between adjacent S segments. The voltage changing circuit includes M voltage sources, each connected to M of the S segments. The current changing circuit includes M current sources, each connected to M of the S segments. At least one of the S segments has a different thickness from another of the S segments. The S segments include coplanar bottom surfaces. The bottom surface of at least one of the S segments is not coplanar with the bottom surface of another of the S segments. The bottom surface of at least one of the S segments is non-planar. The substrate-facing edge of at least one of the S segments is tapered.

[0013] A method for processing a substrate includes the steps of: placing the substrate on a substrate support in a processing chamber; supplying an RF voltage to a first electrode in the substrate support; placing a second electrode on the substrate support, comprising S segments arranged concentrically and with gaps between them, wherein S is an integer greater than 1; connecting M impedances to M of the S segments of the second electrode, wherein M is an integer greater than 0 and less than or equal to S, and the M impedances are selected from the group consisting of resistors, inductors, capacitors, and combinations thereof; and supplying an RF voltage to the first electrode to generate and maintain plasma in the processing chamber.

[0014] In other features, at least one of the M impedances has a fixed impedance. At least one of the M impedances has a variable impedance. The method includes the steps of sensing a parameter of at least one segment of S segments and adjusting the variable impedance of at least one of the M impedances based on the parameter. The method includes the step of using the parameter to detect a hardware fault. The method includes the step of using the parameter to detect the deposition of a film on a second electrode. The parameter includes the temperature of at least one segment of S segments.

[0015] In other properties, S is greater than 2 and less than or equal to 6. M is greater than 2 and less than or equal to 6. M is equal to S.

[0016] In other features, the method includes the step of using M switches connected in parallel to M impedances to selectively short-circuit one corresponding impedance among M impedances and ground one corresponding segment among S segments. The sides of the S segments are configured to prevent a line of sight from the plasma through the gap. The sides of the S segments are stepped. The sides of the S segments are inclined. The S segments include gas through holes. The M impedances include resistors and at least one inductor and capacitor. The S segments are made of a material selected from the group consisting of silicon, polysilicon, silicon carbide, ceramic and quartz. At least one segment of the S segments includes a substrate made of the first material and a plasma-resistant layer disposed on the substrate.

[0017] In other features, the plasma-resistant layer is made of a material selected from the group consisting of silicon, polysilicon silicon carbide, and ceramics. The plasma-resistant layer has a thickness in the range of 20 μm to 500 μm. The method includes the step of placing a filler material between adjacent segments of S segments. The method includes the step of placing an insulating coating layer on the side surface of at least one segment of the S segments. The side surface is positioned orthogonal to the plane containing the substrate.

[0018] In other features, the method includes the step of connecting M voltage sources to M of S segments, each. The method includes the step of connecting M current sources to M of S segments, each. At least one of the S segments has a different thickness from another of the S segments. The S segments include coplanar bottom surfaces. The bottom surface of at least one of the S segments is not coplanar with the bottom surface of another of the S segments. The bottom surface of at least one of the S segments includes either a convex portion or a concave portion. The method includes the step of tapering the substrate-facing edge of at least one of the S segments.

[0019] A plasma processing system for processing a substrate includes a processing chamber. A substrate support is placed inside the processing chamber and includes a first electrode. A second electrode is placed above the substrate support and includes S segments arranged concentrically with gaps between them, where S is an integer greater than 1. A segment control circuit includes M change circuits connected to M of the S segments of the second electrode, where M is an integer greater than 0 and less than or equal to S. The M change circuits are configured to change at least one of the impedance, voltage, and current of the M segments of the S segments relative to ground. A plasma generator is configured to supply an RF voltage to the first electrode to generate and maintain plasma within the processing chamber.

[0020] In other features, the plasma density controller is configured to adjust at least one of impedance, voltage, and current. The sensor is configured to sense parameters of at least one of M segments out of S segments. One of the M changing circuits is configured to adjust at least one of impedance, voltage, and current in response to the parameter.

[0021] A segmented electrode for a substrate processing system comprises S electrode segments, where S is an integer greater than 1. Of the S electrode segments, S-1 have an annular shape. Of the S electrode segments, one S has a circular shape. The S electrode segments are arranged concentrically and include gaps between them. Each of the S electrode segments includes a first set of gas through-holes and a plurality of fasteners attached to its upper surface and positioned adjacent to the first set of gas through-holes.

[0022] In other features, each of the S electrode segments further comprises a second set of gas through-holes located radially inward of the first set of gas through-holes, and a plurality of fasteners are positioned between the first set of gas through-holes and the second set of gas through-holes. S is equal to 4.

[0023] In other features, each of the S electrode segments includes multiple pin alignment holes. The multiple pin alignment holes are located between a first set of gas through-holes and a second set of gas through-holes. Each of the S electrode segments includes a power supply contact. The power supply contact is located between a first set of gas through-holes and a second set of gas through-holes. S-2 of the S electrode segments include multiple power supply contacts. Each of the S-2 power supply contacts of the S electrode segments is rotated relative to the other S-2 of the S electrode segments. The gap is in the range of 1 mm to 3 mm.

[0024] In other features, each of the S electrode segments includes a plurality of pin alignment holes and at least one power supply contact. The plurality of pin alignment holes and at least one power supply contact of each of the S electrode segments are located between a corresponding one of the first set of gas through holes and a second set of gas through holes.

[0025] In other features, the radial inner surface and radial outer surface of at least one electrode segment of the S electrode segments include a first radial projection and a second radial projection, respectively. The first radial projection of the radial inner surface overlaps perpendicularly with the radial projection of the first adjacent electrode segment among the S electrode segments. The second radial projection of the radial outer surface overlaps perpendicularly with the radial projection of the second adjacent electrode segment among the S electrode segments.

[0026] In other features, the outer ring is positioned around the radially outer edge of the segmented electrode. The outer ring includes a radial projection extending below a radial projection extending radially outward from one of the radially outermost of the S electrode segments. The outer ring also includes a downward projection extending downward from the radially inner end of the outer ring.

[0027] The system comprises segmented electrodes and a shroud ring including an annular body including a radially inner portion with radial projections, the lower projection of the outer ring resting on the radially inner radial projection of the annular portion of the shroud.

[0028] An electrode segment for a segmented electrode of a plasma processing system comprises one of an annular body and a circular body. A first set of gas through-holes is disposed in said one of the annular body and the circular body. A second set of gas through-holes is disposed in said one of the annular body and the circular body. A plurality of fasteners are attached to an upper surface of said one of the annular body and the circular body, and are disposed between the first set of gas through-holes and the second set of gas through-holes.

[0029] In other features, a plurality of pin alignment holes are disposed in said one of the annular body and the circular body. The plurality of pin alignment holes are disposed between the first set of gas through-holes and the second set of gas through-holes. A power feed contact is disposed on said one of the annular body and the circular body. The power feed contact is disposed between the first set of gas through-holes and the second set of gas through-holes. A plurality of power feed contacts are disposed on said one of the annular body and the circular body. The plurality of pin alignment holes and at least one power feed contact are disposed on said one of the annular body and the circular body.

[0030] In other features, the plurality of pin alignment holes and the at least one power feed contact are disposed between the first set of gas through-holes and the second set of gas through-holes. Said one of the annular body and the circular body comprises an annular body, and a radially inner surface and a radially outer surface of the annular body comprise a first radial projection and a second radial projection, respectively. The first radial projection on the radially inner surface is configured to overlap a radial projection of a first adjacent electrode segment, and the second radial projection on the radially outer surface is configured to overlap a radial projection of a second adjacent electrode segment.

[0031] In other features, said one of the annular body and the circular body comprises a circular body, and a radially outer surface of the circular body comprises a radial projection. The radial projection on the radially outer surface of the circular body is configured to overlap a radial projection on an adjacent electrode segment.

[0032] Further areas of application of this disclosure will become apparent from the modes for carrying out the invention, the claims, and the drawings. The modes for carrying out the invention and specific examples are for illustrative purposes only and do not limit the scope of this disclosure.

[0033] This disclosure will be better understood from the detailed description and accompanying drawings. [Brief explanation of the drawing]

[0034] [Figure 1A] This is a functional block diagram of an example of a processing chamber, which includes an RF plasma generator, a grounded non-segmented upper electrode, and a lower electrode that receives an RF voltage to generate plasma in the processing chamber. [Figure 1B] This is a functional block diagram of an example of a processing chamber for generating plasma within the processing chamber according to the present disclosure, which includes an RF plasma generator, a segmented upper electrode having one or more floating segments, and a lower electrode receiving an RF voltage. [Figure 1C] This is a functional block diagram of the impedance, current, and / or voltage changing circuit according to the present disclosure. [Figure 2A] Examples of ion gradient and plasma density variations as a function of substrate radius when using electrodes having various combinations of floating and / or grounded segments (maybe multiple segments) as described in this disclosure are shown. [Figure 2B] Examples of ion gradient and plasma density variations as a function of substrate radius when using electrodes having various combinations of floating and / or grounded segments (maybe multiple segments) as described in this disclosure are shown. [Figure 2C] Examples of ion gradient and plasma density variations as a function of substrate radius when using electrodes having various combinations of floating and / or grounded segments (maybe multiple segments) as described in this disclosure are shown. [Figure 2D]Examples of ion gradient and plasma density variations as a function of substrate radius when using electrodes having various combinations of floating and / or grounded segments (maybe multiple segments) as described in this disclosure are shown. [Figure 2E] Examples of ion gradient and plasma density variations as a function of substrate radius when using electrodes having various combinations of floating and / or grounded segments (maybe multiple segments) as described in this disclosure are shown. [Figure 3A] This is a functional block diagram of an example of a segmented electrode having a floating segment including a fixed impedance according to the present disclosure. [Figure 3B] This is a functional block diagram of an example of a segmented electrode having a floating segment including variable impedance according to the present disclosure. [Figure 3C] This is a functional block diagram of an example of a segmented electrode having fixed or variable impedance, a current source, and / or a voltage source, according to the present disclosure. [Figure 3D] This figure shows an example of a fixed impedance, including multiple switchable impedances as disclosed herein. [Figure 3E] This figure shows an example of a variable impedance, including a plurality of switchable fixed impedances and / or variable impedances as described herein. [Figure 4] This is a side cross-sectional view of an example of a temperature-controlled segmented electrode according to the present disclosure. [Figure 5A] A side view illustrating an example of a segmented electrode and / or segment according to this disclosure. [Figure 5B] A side view illustrating an example of a segmented electrode and / or segment according to this disclosure. [Figure 5C] A side view illustrating an example of a segmented electrode and / or segment according to this disclosure. [Figure 5D] A side view illustrating an example of a segmented electrode and / or segment according to this disclosure. [Figure 5E] A side view illustrating an example of a segmented electrode and / or segment according to this disclosure. [Figure 5F] A side view illustrating an example of a segmented electrode and / or segment according to this disclosure. [Figure 5G] A side view illustrating an example of a segmented electrode and / or segment according to this disclosure. [Figure 5H] A side view illustrating an example of a segmented electrode and / or segment according to this disclosure. [Figure 5I] A side view illustrating an example of a segmented electrode and / or segment according to this disclosure. [Figure 5J] A side view illustrating an example of a segmented electrode and / or segment according to this disclosure. [Figure 5K] A side view illustrating an example of a segmented electrode and / or segment according to this disclosure. [Figure 5L] A side view illustrating an example of a segmented electrode and / or segment according to this disclosure. [Figure 5M] A side view illustrating an example of a segmented electrode and / or segment according to this disclosure. [Figure 6] This graph shows an example of the plasma density of a segment as a function of radial distance when using the segmented electrodes according to this disclosure. [Figure 7] This graph shows an example of the plasma density of a segment as a function of radial distance when using the segmented electrodes described in this disclosure. [Figure 8] This graph shows examples of plasma density for non-segmented electrodes and coupled plasma density for segmented electrodes as a function of radial distance, according to this disclosure. [Figure 9] This is a perspective view of an example of a segmented electrode according to this disclosure. [Figure 10] This is a perspective view of an example of a segmented electrode according to this disclosure. [Figure 11] This is a perspective view of a thermal gasket having zones of different materials and / or thicknesses to alter the bonding according to the present disclosure. [Figure 12]This is a plan view of another example of the plasma-facing surface of the segmented electrode assembly according to the present disclosure. [Figure 13] This is a plan view of an example of the top surface of a partially assembled segmented electrode assembly shown in Figure 12 of the present disclosure. [Figure 14] Figure 12 is a plan view of an example of the top surface of a segmented electrode assembly. [Figure 15] This is a side cross-sectional view of an example of a segmented electrode assembly according to this disclosure. [Figure 16] This is a partial side cross-sectional view of an example of a segment of a segmented electrode assembly according to this disclosure. [Modes for carrying out the invention]

[0035] In drawings, reference numbers may be reused to identify similar and / or identical elements.

[0036] This disclosure relates to an electrode for a plasma processing system comprising multiple segments, one or more of which are floating, biased by a voltage source, and / or biased by a current source (rather than shorted to ground). The segments may be connected to a power supply. Rather than using a grounded, unsegmented electrode, this disclosure uses an electrode comprising segments that are radially segmented, arranged concentrically, and spaced apart from one another by gaps.

[0037] As used herein, the term “floating” refers to a high DC impedance relative to ground (e.g., greater than 100 ohms). The term “grounded” refers to a low DC impedance relative to ground (e.g., less than 100 ohms). The electromagnetic state of a segment is tunable for DC and / or other plasma excitation frequencies. In some examples, segments of a segmented electrode are connected to passive or active, fixed or variable impedance, voltage sources, current sources and / or power sources.

[0038] Impedance is the resistance to alternating current presented by the combined effect of resistance and reactance in a circuit. Examples of impedance sources include resistors, inductors, capacitors, and / or combinations thereof (for example, series and / or parallel combinations of resistors, inductors, and / or capacitors may be used). For example, impedance can include different values ​​of resistors, inductors, capacitors, resistors and inductors, resistors and capacitors, capacitors and inductors, and / or resistors, capacitors and inductors. Resistors affect direct current (DC) coupling, while reactive components such as inductors and capacitors alter alternating current (AC) coupling between the segment and ground. In other examples, a current source or voltage source may also be used to bias one or more segments of a segmented electrode.

[0039] By varying the impedance, voltage source, and / or current source connected to the segmented electrodes, the plasma density can be adjusted or tuned radially to achieve a desired plasma density pattern during substrate processing. For example, using impedance connected to radially segmented electrodes can make the plasma density more uniform from the center of the substrate to the radially outer edge of the substrate (compared to a grounded non-segmented electrode). However, in other examples, the impedance, current source, and / or voltage source can also be adjusted to match other non-uniform plasma profiles.

[0040] Referring here to Figure 1A, the substrate processing system 100 includes a processing chamber 102 which includes a gas distribution device 104 and a substrate support 106. In some examples, the substrate support 106 includes an electrostatic chuck (ESC). During operation, the substrate 108 is placed on the substrate support 106. When an ESC is used, the substrate support 106 includes a base plate 110. In some examples, the base plate 110 is made of a conductive material such as aluminum. The base plate 110 supports a top plate 112, which may be made of ceramic or a plasma-resistant material. A bonding layer 114 may be placed between the top plate 112 and the base plate 110 to bond the top plate 112 and the base plate 110. The base plate 110 may include one or more coolant channels 116 for coolant to flow within the base plate 110. In some examples, an edge ring 118 is placed around the substrate support 106 to shape the plasma.

[0041] The gas delivery system 130 includes one or more gas sources 132. The gas sources 132 supply one or more process gas mixtures. In the case of an etching process, the process gas mixture may include a carrier gas, an inert gas, an etching gas, etc. In the case of a deposition process, the process gas mixture may include a carrier gas, an inert gas, a deposition precursor gas, etc. The gas sources 132 are connected to a manifold 140 by a flow measuring device 134 (e.g., a mass flow controller and valves). The output of the manifold 140 is supplied to a gas distributor 104. In some examples, the steam delivery system 170 includes one or more steam delivery sources that supply steam to the manifold 140 or are connected to a gas distributor 104 downstream of the manifold 140. In some examples, the steam delivery system 170 includes one or more ampoules 174, a vaporizer 176, and a flow measuring device 178 that controllly supply steam to the processing chamber.

[0042] In some examples, the temperature controller 142 is connected to a heating element 144 (e.g., a thermal control element (TCE) or resistive heater) located on the top plate 112. The temperature controller 142 may also be used to power the heating element 144 to control the temperature of the substrate support 106 and the substrate 108 during processing. The temperature controller 142 also operates a coolant assembly 146 that controls the flow of coolant through the coolant channel 116. For example, the coolant assembly 146 may include a coolant pump and a coolant reservoir (not shown). The temperature controller 142 operates the coolant assembly 146 to selectively flow coolant into the coolant channel 116 to cool the substrate support 106 and the substrate 108.

[0043] Valves 150 and pumps 152 are connected to a gas line 148 (e.g., an exhaust gas line) and are used to control the pressure in the processing chamber 102 and / or to discharge reactants from the processing chamber 102. The plasma generator 154 includes a radio frequency (RF) source 156 for outputting RF voltage / power to a matching network 158. The matching network 158 matches the impedance of the RF source 156 to the impedance of the load, including the processing chamber and plasma. A controller 160 may be used to monitor system parameters and control the components of the substrate processing system 100 based on a recipe. One or more robots 161 may be used to deliver substrates onto the substrate support 106 and remove substrates from the substrate support 106.

[0044] The gas distribution device 104 includes a gas plenum 182 that distributes gas from the gas delivery system 130 and / or vapor from the vapor delivery system 170 into a gas through-hole 184 that passes through a grounded non-segmented electrode 186. In this example, the non-segmented electrode 186 comprises a circular plate made of a conductive material short-circuited to ground. The uniformity of the plasma generated between the non-segmented electrode 186 and the substrate 108 may vary from one radial position on the substrate 108 to another. For example, the plasma density may be higher in the central region of the substrate 108 and lower in the radially outer region of the substrate 108. In some applications, variations in plasma density can lead to processing non-uniformity.

[0045] Referring here to Figure 1B, the substrate processing system 200 according to the present disclosure includes an electrode 220 that is radially segmented and includes S segments 222-1, 222-2, ..., and 222-S, where S is an integer greater than 1. In some examples, the electrode 220 includes an upper electrode. However, the positions of the power supply electrode and the floating electrode can be swapped. In some examples, S is between 2 and 6. The RF plasma generator 240 includes an RF source 242 and a matching network 244 that supplies an RF voltage to the base plate 110 to ignite and maintain the plasma.

[0046] The first segment of the S segments 222-1 is positioned in the center above the substrate support 106. The first segment of the S segments 222-1 has a circular cross-section. The remaining S segments 222-2, ..., 222-S have an annular cross-section and are arranged concentrically around the first segment of the S segments 222-1.

[0047] As will be further explained below, S segments 222-1, 222-2, ..., and 222-S are each connected to M impedances of the segment control circuit 256, where M is greater than 0 and less than or equal to S. One or more of the S segments 222-1, 222-2, ..., and 222-S are floating (rather than grounded) to allow adjustment of the plasma density in the processing chamber 102. In some examples, all S segments 222-1, 222-2, ..., and 222-S are floating (connected to the same impedance or two or more different impedance values) to allow adjustment of the plasma density in the substrate processing chamber. In some examples, at least one of the S segments 222-1, 222-2, ..., and 222-S is grounded, and the remaining segments are floating (connected to the same impedance or two or more different impedance values) to allow adjustment of the plasma density in the processing chamber 102. In some examples, the plasma density is regulated using the impedance of the segment control circuit 256 to provide a relatively uniform plasma density across the substrate in the radial direction. In other examples, different combinations of ground segments and / or floating segments are used to create other plasma density patterns.

[0048] For example, an impedance control circuit can be tuned to a desired impedance value at different frequencies to enhance specific physical phenomena. For instance, an impedance control circuit may have a high impedance value in the high-frequency range above 50 MHz and a low impedance value at DC (or vice versa).

[0049] The S impedances of the segment control circuit 256 can be configured to connect the S segments to ground, to a fixed impedance connected to ground, and / or to a variable impedance connected to ground. Each of the S impedances of the segment control circuit 256 can include resistive, inductive, and / or capacitive impedances such as resistors, inductors, and / or capacitors connected in series and / or parallel combinations. In some examples, at least one of the S impedances of the segment control circuit 256 is a fixed or variable impedance (rather than a direct connection to ground). In some examples, at least one of the S impedances of the segment control circuit 256 is connected to ground (for example, the center segment is connected to ground).

[0050] In some examples, the values ​​of the S impedances of the segment control circuit 256 are determined for a particular configuration and remain static once calibration is performed. In other examples, one or more of the S impedances of the segment control circuit 256 are variable impedances that can be adjusted during calibration, maintenance, or in response to feedback from sensors (e.g., in response to the sensed or estimated current, voltage, temperature, etc., of the segment, or other chamber parameters).

[0051] When variable impedance, current sources, and / or voltage sources are used, the plasma density controller 248 is configured to receive one or more sensed signals, such as current, voltage, and / or temperature measurements of the corresponding segment (and / or other measured chamber parameters), and adjust the impedance, voltage source, and / or current source accordingly. For example, impedance adjustment can be performed during calibration, maintenance, and / or during or between substrate processing cycles. In some examples, the temperature sensor described below senses the segment temperature (e.g., using a photon probe or insulated thermocouple with a low RF coupling coefficient). In some examples, the heat flux and / or plasma density of the segment are estimated in response to the measurement.

[0052] In some examples, sensed signals can be used to detect system failures and flag hardware failures. For example, sensed signals are compared against predetermined thresholds and / or ranges to detect hardware failures. In other examples, sensed signals are stored and used to detect process repeatability issues between cycles. In yet another example, sensor signals are used to estimate the thickness of a film (e.g., etching chemical or polymer) on an electrode segment. For example, thickness can be estimated based on continuous or transient sensed signals measured during impedance changes. For example, changes in thickness can be determined in response to lower frequency amplitude variations.

[0053] In some examples, the segments of the segmented electrode have a radial width and / or thickness that increases or decreases from the center to the edge of the segmented electrode. In other examples, the segments of the segmented electrode do not have a radial width and / or thickness that increases or decreases from the center to the edge of the segmented electrode. The variation in the radial thickness of the segments may be used to change the radial length scale of the plasma density modulation by impedance control.

[0054] Referring here to Figure 1C, the segment control circuit 256 is shown to include an impedance changing circuit 270, a voltage changing circuit 274, and / or a current changing circuit 278. The impedance changing circuit 270 is configured to change the impedance value by connecting and / or disconnecting a fixed impedance and / or variable impedance 272 to one or more of the electrode segments. The voltage changing circuit 274 is configured to change the voltage value by connecting and / or disconnecting a fixed and / or variable voltage source 276 to one or more of the electrode segments. The current changing circuit 278 is configured to change the current value by connecting and / or disconnecting a fixed and / or current source 280 to one or more of the segments.

[0055] Referring here to Figures 2A to 2E, examples of variations in plasma density (and plasma density modulation relative to the ground electrode) as a function of substrate radius are shown for electrodes with various combinations of floating and / or ground segments. In Figures 2A to 2B, the unsegmented electrodes are either ground (represented by solid line blocks) or floating (represented by open blocks), respectively. In Figures 2C to 2E, electrodes with both ground and floating segments in various combinations have plasma density profiles and plasma density modulation profiles that are adjustable relative to the ground electrode. In some examples, the electrode segments are symmetrical with respect to the center of the substrate. In Figure 2C, the electrode includes an annular ground segment arranged around a floating segment. In Figure 2D, the electrode includes a first floating segment, an annular ground segment arranged around the first floating segment, and a second floating segment arranged around the annular ground segment. In Figure 2E, the electrode includes an annular floating segment arranged around a ground segment.

[0056] Referring here to Figures 3A and 3B, the segmented electrode 310 is positioned above the substrate 108 on the substrate support 106. The segmented electrode 310 includes a plurality of segments 312-1, 312-2, ..., and 312-S separated by gaps 313, where S is an integer greater than 1. The shape and / or size of each gap 313 may be the same or different from one another. In Figure 3A, one or more of the plurality of segments 312-1, 312-2, ..., and 312-S are connected to the corresponding electrical path or circuit exhibiting one of the fixed impedances 330-1, 330-2, ..., and 330-S (corresponding to Z1, Z2, ..., ZS). In some examples, one or more impedances (e.g., the fixed impedance 330-1 of segment 312-1) may be omitted, and the corresponding segment may be grounded. In other examples, all of the impedances Z1, Z2, ..., and ZS are connected to a fixed impedance. In some examples, the fixed impedances Z1, Z2, ..., and ZS are different from each other. In other examples, one or more of the fixed impedances Z1, Z2, ..., and ZS are the same. In some examples, switches 332-1, 332-2, ..., and 332-S are arranged in parallel with one or more of the impedances 330-1, 330-2, ..., and 330-S, allowing the segments to be switched between ground and floating during operation. In some examples, switch 332 includes a relay.

[0057] In Figure 3B, one or more of the segments 312-1, 312-2, ..., 312-S are connected to variable impedances Z1, Z2, ..., ZS. In this example, at least one of the impedances Z1, Z2, ..., ZS is a variable impedance. In some examples, all of the impedances Z1, Z2, ..., and ZS are variable (for example, corresponding to impedances 340-1, 340-2, ..., and 340-S). In some examples, one or more of the impedances Z1, Z2, ..., and ZS are omitted, and the segment is grounded. In some examples, one or more of the impedances Z1, Z2, ..., and ZS are fixed. In some examples, a switch can be used to switch the segment between floating and ground (or different impedances) as described above.

[0058] The impedance of each segment can also be modulated to achieve different values ​​for the power settings of each RF generator in the pulsed plasma. For example, a high-speed switch or relay can be used to switch connections between different locations corresponding to different impedances, using either an independent synchronization signal or a voltage sensor connected to the electrode segment.

[0059] Floating segmented electrodes allow for impedance tuning in independent radial zones of the electrode, enabling variations in plasma density across the substrate. In some examples, a four-zone floating segmented electrode can control plasma density modulation of up to 10% (e.g., 7%) across the substrate (compared to an unsegmented ground electrode). In some examples, floating segmented electrodes provide a relatively flat electrode plasma density by allowing compensation for plasma non-uniformity from the center to the edges. Floating segmented electrodes also allow for the use of a wider range of process conditions in recipes (power, pressure, etc.).

[0060] Radial modulation of plasma density can also be used to achieve a response on a specific wafer. In some examples, radial modulation can be used to compensate for other causes of non-uniformity. In some examples, the plasma generator includes multiple power settings for pulsed plasma. In some examples, the M impedances of M corresponding segments out of S segments are tuned for each of the multiple power settings.

[0061] In Figure 3C, each of the multiple segments 312-1, 312-2, ..., and 312-S is connected to adjustment circuits 350-1, 350-2, ..., and 350-S, which include at least one of a variable impedance circuit, a voltage source, and / or a current source that provides variable impedance, voltage, and / or current, thereby adjusting plasma density or other plasma parameters.

[0062] Referring here to Figures 3D and 3E, the impedance corresponding to each segment may include two or more impedances that can be connected and / or disconnected to provide different impedance values. For example, the impedance values ​​can be adjusted for different plasma frequencies and / or switched in response to different modes in the RF plasma pulse.

[0063] In Figure 3D, each of the impedances Z1, Z2, ..., and ZS (e.g., Figures 3A-3C) includes one or more fixed impedances that can be switched to provide different impedances. For example, impedance Z1 may include one or more impedances Z1A, Z1B, ... and corresponding switches SWA, SWB, ... which can be used to select impedance values ​​(e.g., Z1A or Z1B, or a parallel combination of Z1A and Z1B). In some examples, one of the impedances (e.g., Z1A) is selected for operation at a first RF plasma frequency (e.g., 400 kHz), and another of the impedances (e.g., Z1B) is selected for operation at a second RF plasma frequency (e.g., 60 MHz), etc. For example, the switches SWA, SWB, ... may include fast switches or relays that switch connections between different locations corresponding to different impedances in response to an independent synchronization signal or feedback from a voltage sensor connected to an electrode segment.

[0064] In Figure 3E, each of the variable impedances Z1, Z2, ..., and ZS (e.g., in Figures 3A-3C) includes one or more fixed and / or variable impedances that can be switched or adjusted to provide different impedances. For example, a variable impedance Z1 may include one or more fixed or variable impedances Z1A, Z1B, Z1C... and corresponding switches SWA, SWB, SWC... that can be used to select one or a combination of impedances. In some examples, one of the impedances (e.g., Z1A) is selected for operation at a first plasma frequency (e.g., DC), another of the impedances (e.g., Z1B) is selected for operation at a second plasma frequency (e.g., 400 kHz), and another of the impedances (e.g., Z1C) is selected for operation at a third plasma frequency (e.g., 60 MHz), etc.

[0065] Referring here to Figure 4, an example of a temperature-controlled upper electrode is shown. A cooling plate 414, including a cooling channel 415, is positioned adjacent to a heating plate 418, which includes one or more resistive heaters 419. A thermal interface layer 416 is positioned between the cooling plate 414 and the heating plate 418, and between the heating plate 418 and the gas distribution plate 422.

[0066] The gas distribution plate 422 may include one or more gas plenums that fluidly communicate with gas through-holes (not shown) extending through the gas distribution plate 422 to supply process gas to the upper surface of the electrode 440. The barrier layer 426 and the thermal gasket layer 430 are positioned between the gas distribution plate 422 and the electrode 440, which includes S segments 440-1, 440-2, ..., and 440-S. The thermal gasket layer 430 provides electrical insulation while allowing heat exchange to occur between the electrode segments exposed to the plasma and the cooling plate 414 and / or heating plate 418.

[0067] Referring here to Figures 5A and 5M, the S segments 440-1, 440-2, ..., and 440-S of electrode 440 are spaced apart from each other, defining gaps 439 to prevent short circuits between adjacent segments. In some examples, the sides of the segments have various different configurations that can reduce arc discharge, plasma ignition, and / or accumulation of undesirable products or residues. In some examples, the substrate-facing surface of the segment can be tilted to change the radial length scale of plasma density modulation by impedance control. In other words, by changing the tilt of the segment, the radial width of the Gaussian response of the plasma in the segment can be increased or decreased.

[0068] In Figure 5A, the radially opposing surfaces of S segments 440-1, 440-2, ..., and 440-S include one or more stepped differences 450 to prevent line-of-sight paths and reduce voltage breakdown.

[0069] In Figure 5B, S segments 440-1, 440-2, ..., and 440-S may have different radial widths and / or number of step differences (e.g., three step differences in 480 and two step differences in 484). In Figure 5C, the opposing surfaces 490 of the S segments 440-1, 440-2, ..., and 440-S may be inclined with respect to the direction orthogonal to the plane containing the substrate to prevent line-of-sight paths associated with arc discharge and ignition, or to reduce manufacturing costs. In some examples, O-rings are used between one or more pairs of adjacent segments (shown in Figure 10 below).

[0070] In Figure 5D, the filler material 441 can be placed in the gap 443 located between adjacent segments of the electrode (e.g., segments 440-1 and 440-2 in Figure 5D). In some examples, the filler material 441 includes an insulating material. The insulating material can be varied between adjacent segments. For example, insulating materials with different dielectric constants can be used to adjust the coupling between adjacent segments. In some examples, the sides of the electrode segments (arranged orthogonally across the plane containing the substrate) are coated with an insulating material to increase the arc margin or control the adhesion of chemical species to the edges of the electrode segments. For example, filler or insulating materials can be used to increase the dielectric breakdown voltage (e.g., alumina coating) or improve polymer adhesion (e.g., yttrium oxide (Y2O3) coating). In some examples, the filler material 441 may consist of a single material or several different materials. Different mixtures or compositions of materials can be used to fill different gaps. The filler material 441 may completely or partially fill the gap 443.

[0071] In some examples, electrode segments are made from silicon (e.g., high-resistance silicon, low-resistance silicon), polysilicon, silicon carbide, quartz, ceramic, or other plasma-resistant materials. In Figure 5E, segments can be manufactured using two or more materials to reduce costs. For example, segment 440-2 includes a substrate 447 made from a substrate material such as stainless steel, aluminum alloy, and / or silicon (e.g., lower-cost and lower-purity silicon than that used for the plasma-resistant layer). A plasma-resistant layer 449 (made from a plasma-resistant material (e.g., silicon)) is formed, deposited, coated, and / or applied onto the outer surface of the substrate 447. In some examples, the plasma-resistant layer 449 has a thickness ranging from 20 μm to 500 μm (e.g., 100 μm). The cost of manufacturing segments can be reduced by limiting the use of plasma-resistant layers, as manufacturing the plasma-resistant layer using thin layers rather than monolithic methods is more expensive and difficult.

[0072] In Figures 5F and 5G, the substrate-facing surface 451 of segment 440-2 may have other profiles in addition to a planar shape. In Figure 5F, the substrate-facing surface 451 includes a concave cavity (and / or an outer planar portion and an inner recess). In Figure 5G, the substrate-facing surface 453 includes a convex projection (and / or an outer planar portion and an inner convex portion). In Figure 5H, the edge of segment 440-2 is tapered at 455 to adjust the plasma density. One or more edges of a segment may be chamfered and / or rounded to facilitate alignment and / or assembly with other components and / or to further adjust the plasma density.

[0073] In Figure 5I, segment 440-2 is shown with an insulating layer 457 positioned on the radial side of segment 440-2. The insulating layer 457 can be used to adjust the radial shape of the plasma in the segment. The insulating material can be used to adjust the coupling between adjacent segments, increase the arc margin, and / or control the adhesion of chemical species to the edges of the electrode segments.

[0074] In further variations, the S segments have different thicknesses in directions perpendicular to the plane containing the substrate. In some examples, the S segments have substrate-facing surfaces that are coplanar. In other examples, one or more of the substrate-facing surfaces may be non-coplanar.

[0075] In other examples, S segments have substrate-facing surfaces that are inclined with respect to a plane parallel to the top surface of the substrate support. For example, in Figure 5J, the substrate-facing surfaces 462 and 464 of segment 440-2 are inclined or sloped in opposite directions. The inclination or slope of the substrate-facing surfaces 462 and 464 is with respect to a plane 466 parallel to the plane containing the top surface of the substrate support. In some examples, the substrate-facing surfaces are inclined in opposite directions from the middle portion 465 of segment 440-2 to the radial side of the segment (e.g., at 462). In some examples, the substrate-facing surfaces 462 and 464 are inclined from the middle portion 465 to a position spaced apart from one or both radial side of the segment (e.g., at 464). In some examples, the inclinations of the substrate-facing surfaces 462 and 464 are the same or symmetrical (mirror image with respect to the middle portion of the segment).

[0076] In some examples, the inclinations of the substrate-facing surfaces 462 and 464 are not the same or are asymmetrical. In Figure 5K, only one side of segment 440-2 includes a substrate-facing surface that is inclined. In Figure 5L, the substrate-facing surface 474 is inclined in one direction from one radial side to the other radial side.

[0077] Referring here to Figure 5M, segment 440-2 includes substrate-facing surfaces 478 and 480 that are inclined with respect to plane 466, and an intermediate portion 482 parallel to plane 466. In some examples, the intermediate portion 482 corresponds to at least 10%, 20%, 30%, or more of the radial width of segment 440-2. The inclined substrate-facing surfaces 478 and 480 correspond to at least 10%, 20%, 30%, or more of the radial width of segment 440-2.

[0078] Referring to Figures 6-8, the plasma density in the radial region below the S segments can be adjusted or regulated using fixed or variable impedances connected to the S segments. In Figures 6 and 7, one of the central segments of the S segments has its center above the center of the substrate and generates a peak plasma density above the center of the substrate. The plasma density associated with one of the central segments of the S segments attenuates with radial distance from the center of the substrate. Adjacent S segments have an annular shape and generate first and second peaks below on both sides of the annular segment. The density attenuates radially inward and radially outward from each peak. The response of the S segments can be changed using the value of the impedance connected to them (along with their width, shape, material, etc.). When the S segments are used together, the plasma densities of each segment are added together to form a coupled plasma density.

[0079] Figure 8 compares the plasma density of a segmented electrode with that of a non-segmented electrode. The segmented electrode is connected to a fixed or variable impedance to adjust the plasma density of each individual segment. As can be seen from the figure, the segmented electrode provides a more uniform plasma density with a fixed or variable impedance compared to a grounded non-segmented electrode.

[0080] Referring here to Figures 9 and 10, further details regarding the segmented electrode are shown. In Figure 9, the segmented electrode 500 is shown to include a plurality of electrode segments 510-1, 510-2, 510-3, and 510-4 arranged concentrically with gaps between them. Some or all of the plurality of electrode segments 510-1, 510-2, 510-3, and 510-4 are connected to a fixed or variable impedance. Each of segments 510-1, 510-2, 510-3, and 510-4 is separated from an adjacent segment by a predetermined gap to prevent short circuits. In some examples, the segmented electrode 500 includes a pattern 520 of gas through-holes 522 that pass perpendicularly through at least one of the electrode segments 510-1, 510-2, 510-3, and 510-4. In some examples, one or more cavities 524 (that do not pass through the corresponding electrode segments) may be used to receive screw fasteners for fastening the segmented electrodes to other components of the processing chamber.

[0081] In Figure 10, a portion of the segmented electrode 600 is shown to include electrode segments 510-2, 510-3, and 510-4. A thermal gasket 610 is placed on the surfaces of electrode segments 510-1, 510-2, 510-3, and 510-4, over the gaps located between them. The thermal gasket 610 includes openings 612 having various different shapes to provide clearance for the cavity 524 and / or gas through-holes 522 pattern 520. A barrier layer 620 is placed above the thermal gasket 610. In some examples, one or more O-rings 630 can be used in the gaps 632 between adjacent segments of electrode segments 510-1, 510-2, 510-3, and 510-4 to reduce plasma arc discharge and ignition.

[0082] Referring here to Figures 4, 10, and 11, the capacitive coupling between the segments of the segmented electrode 600 and the gas distribution plate 422 can be varied uniformly (all segments are the same) or individually for each segment. For example, the coupling can be varied by adjusting the thickness of the entire surface of the thermal gasket 610 or a portion of the thermal gasket (e.g., the portion aligned with each of the segments). In some examples, the thermal gasket 610 includes different zones 610-1, 610-2, 610-3, and 610-4 aligned with S segments. In some examples, at least two of the zones use different materials (e.g., m1, m2, m3, m4 for each zone) and / or have different thicknesses (e.g., t1, t2, t3, or t4 for each zone) to vary the capacitive coupling between the segmented electrode 600 and the gas distribution plate 422. The amount of coupling can be used to change the plasma density in the corresponding region.

[0083] Designing segmented electrodes with multiple electrode segments (having varying inner and / or outer diameters to allow for adjustability for various applications) while maintaining process uniformity can be challenging. More specifically, the radial position of the electrode segment edges and the position of gas through-holes on the segments are designed to generate a desired plasma profile while supplying a gas flow for a particular application.

[0084] The top surface of each annular or circular electrode segment of a segmented electrode must provide sufficient physical space to allow for the attachment of mechanical fasteners, space for pin alignment holes to properly align the electrode segments (and each other) with respect to the processing chamber, space for providing electrical connections to the electrode segments, and space for a set of gas through-holes to uniformly deliver gas through each of the segmented electrodes. Furthermore, the segmented electrode provides flexibility in terms of varying the inner and / or outer diameter of each electrode segment (within a given range) to allow for control and adjustment of the plasma profile and / or gas flow for specific applications, while providing sufficient gap (or isolation) between each adjacent electrode segment to be electrically isolated and individually controlled under high RF operating conditions of the process chamber.

[0085] In some examples, the mechanical fasteners, pin alignment holes, and / or electrical contacts of each electrode segment are located in an annular region between the inner and outer sets of gas through-holes of each electrode segment.

[0086] The radially facing edges of the segmented electrodes are designed with overlapping projections that define meandering paths (e.g., to prevent a direct line of sight to the plasma), preventing plasma-generated ions from passing through the gaps defined between the electrode segments. The meandering paths help protect the barrier seal positioned beneath and adjacent to the top surface between adjacent pairs of segmented electrodes. As can be understood, if the meandering paths are not used, the barrier seal and / or other components on the segmented electrodes could be damaged by plasma-generated ions.

[0087] Referring here to Figure 12, the plasma-facing surface of the segmented electrode assembly 800, including the outer ring 820 and the segmented electrode 830, is shown. The segmented electrode assembly 800 may also include a shroud ring 810 positioned to surround the segmented electrode 830 and the outer ring 820. The outer ring 820 corresponds to the outer electrode positioned between the segmented electrode 830 and the shroud ring 810. The radially outer edge of the outer ring 820 is positioned on the radially inner edge of the upper surface of the shroud ring 810. The radially outer edge of the segmented electrode 830 is positioned on top of the radially inner edge of the outer ring 820 (e.g., with a gap).

[0088] The radially inner edge of the shroud ring 810 extends radially inward beyond the radially outer edge of the outer ring 820, supporting the radially outer edge of the outer ring 820. In some examples, the outer ring 820 includes a number of gas through-holes 822 arranged along a circle 824 adjacent to the radially inner side of the radially outer edge of the outer ring 820. The gas through-holes 822 penetrate the outer ring 820 vertically. Some, but not all, of the gas through-holes 822 are shown for illustrative purposes, so that they may be understood.

[0089] The segmented electrode 830 includes electrode segments 830-1, 830-2, 830-3, and 830-4 having complementary shapes to enable nesting. Electrode segments 830-1, 830-2, and 830-3 include annular bodies, while electrode segment 830-4 has a circular body. Electrode segment 830-2 is positioned radially inward of electrode segment 830-1 (with some overlap between the two). Electrode segment 830-3 is positioned radially inward of electrode segment 830-2 (with some overlap between the two). Electrode segment 830-4 is positioned radially inward of electrode segment 830-3 (with some overlap between the two).

[0090] The top surfaces of electrode segments 830-1, 830-2, 830-3, and 830-4 are mounted with a gap between the radially facing edges of electrode segments 830-1, 830-2, 830-3, and 830-4 to electrically insulate the electrode segments. The gap allows the electrode segments to be electrically isolated from each other (as they are connected to ground and / or different impedances), preventing arc discharge between the electrode segments.

[0091] Each segment of the segmented electrode 830 may include one or more rings of gas through-holes for supplying process gas to the process chamber. Individual segments of the segmented electrode 830 may include the same or different number of gas through-hole rings, or the same or different gas through-hole distribution patterns. For example, each segment of the segmented electrode 830 may include two rings of gas through-holes to uniformly supply process gas over different radial regions of the substrate. Electrode segment 830-1 includes first and second sets of gas through-holes 832 arranged around circles 834-1 and 836-1. In some examples, circles 834-1 and 836-1 are concentric with each other (and / or concentric with the radially inner and radially outer edges of electrode segment 830-1). The gas through-holes 832 extend perpendicularly through the electrode segments. Circle 834-1 of the gas penetration hole 832 is located radially inward from the radially outer edge of electrode segment 830-1. Circle 836-1 of the gas penetration hole 832 is located radially outward from the radially inner edge of electrode segment 830-1.

[0092] The electrode segment 830-2 includes a gas through-hole 832 arranged along concentric circles 834-2 and 836-2. In some examples, circles 834-2 and 836-2 are concentric with each other and with the semi-radial inner edge and radial outer edge of the electrode segment 830-2. Circle 834-2 of the gas through-hole 832 is located adjacent to the radial outer edge of the electrode segment 830-2. Circle 836-2 of the gas through-hole 832 is located adjacent to the radial inner edge of the electrode segment 836-2.

[0093] Electrode segment 830-3 includes gas through-holes 832 arranged along concentric circles 834-3 and 836-3. In some examples, circles 834-3 and 836-3 are concentric with each other and with the radially inner and radially outer edges of electrode segment 830-3. Circle 834-3 of the gas through-holes 832 is located adjacent to the radially outer edge of electrode segment 830-3. Circle 836-3 of the gas through-holes 832 is located adjacent to the radially inner edge of electrode segment 836-3.

[0094] The electrode segment 830-4 includes a gas through-hole 832 arranged along concentric circles 834-4 and 836-4. In some examples, circles 834-4 and 836-4 are concentric with each other and concentric with the radially outer edge of the electrode segment 830-4. Circle 834-4 of the gas through-hole 832 is located adjacent to the radially outer edge of the electrode segment 830-4. Circle 836-4 of the gas through-hole 832 is located radially inward of circle 834-4 of the gas through-hole 832.

[0095] In some examples, the radially outer edge of the substrate may be positioned below or radially inward of the radially outer edge of the segmented electrode 830.

[0096] Referring here to Figures 13 and 14, the top view of the segmented electrode assembly 800 of Figure 12 is shown. In Figure 13, the segmented electrode assembly 800 is shown partially assembled. The segmented electrode assembly 800 includes a number of threaded cavities 840 configured to receive mechanical fasteners (e.g., 850 and 860 shown in Figure 14). The fasteners are used to mount and maintain the shroud ring 810, the outer ring 820, and the electrode segments 830-1, 830-2, 830-3, and 830-4 in position during substrate processing. The position and number of fasteners are selected to prevent relative movement of each component during expansion and / or contraction due to temperature changes (from room temperature to the process temperature of the plasma) and / or temperature gradients between the various components.

[0097] Multiple threaded cavities 840 are arranged along concentric circles located on the shroud ring 810, the outer ring 820, and electrode segments 830-1, 830-2, 830-3, and 830-4. In some examples, threaded cavities 840 on the shroud ring 810 for mounting the outer ring 820 are positioned closer to the radially inner edge of the shroud ring 810 than to the radially outer edge of the shroud ring 810. On the outer ring 820, threaded cavities 840 are positioned radially inward of the circle 824 of the gas through-hole 822 and spaced apart from the radially inner edge of the outer ring 820. In some examples, threaded cavities 840 are positioned closer to the radially outer edge of the outer ring 820 than to the radially inner edge of the outer ring 820. The circles of the threaded cavity 840 of electrode segments 830-1, 830-2, 830-3, and 830-4 are located in an approximately intermediate annular region between the circles 834-1 and 836-1, 834-2 and 836-2, 834-3 and 836-3 of the gas through-hole 832, as well as between 834-4 and 836-4.

[0098] In some examples, the shroud ring 810 includes 16 threaded cavities 840, the outer ring 820 includes 16 threaded cavities 840, electrode segments 830-1 and 830-2 include 16 threaded cavities 840, electrode segment 830-3 includes 8 threaded cavities 840, and electrode segment 830-4 includes 4 threaded cavities 840. As can be understood, additional or fewer threaded cavities 840 may be used, as well as / or the threaded cavities 840 may be positioned in different locations.

[0099] The pin alignment holes 842 are located concentrically or near the threaded cavities 840 of the outer ring 820 and electrode segments 830-1, 830-2, 830-3, and 830-4. In some examples, the shroud ring 810, the outer ring 820, and electrode segments 830-1, 830-2, and 830-3 include three pin alignment holes 842 spaced approximately 120° apart (subject to adjustments in the spacing of other components). Electrode segment 830-4 has two pin alignment holes 842 (e.g., a central pin alignment hole and a radially spaced pin alignment hole to control the orientation (or clocking) of electrode segment 830-4). In some examples, the pin alignment holes of the shroud ring 810, the outer ring 820, and the electrode segments are clocked in the rotational direction. As can be understood, the outer ring 820 and electrode segments may include additional or fewer pin alignment holes 842, and / or the pin alignment holes 842 may be located in different positions.

[0100] The outer ring 820, and the electrode segments 830-1, 830-2, 830-3, and 830-4, each include one or more power supply contacts 844. In some examples, the outer ring 820 includes three power supply contacts 844 spaced approximately 120° apart (subject to adjustments for the spacing of other components). In some examples, electrode segment 830-1 includes two power supply contacts 844 spaced approximately 180° apart (subject to adjustments for the spacing of other components). In some examples, electrode segment 830-2 includes two power supply contacts 844 spaced approximately 180° apart (subject to adjustments for the spacing of other components). In some examples, the power supply contacts 844 of electrode segment 830-2 are rotationally offset by a range of 60° to 120° with respect to the line passing through the power supply contacts 844 of electrode segment 830-1. As can be understood, the outer ring 820 and electrode segments may include additional or fewer power supply contacts 844, and / or the power supply contacts 844 may be located in different positions.

[0101] In some examples, electrode segment 830-3 includes one power supply contact 844. In some examples, the line passing through the power supply contact 844 of electrode segment 830-3 and the center of electrode segment 830-3 is offset by 30° to 60° in the rotational direction relative to the line passing through the power supply contact of electrode segment 830-2.

[0102] In some examples, electrode segment 830-4 includes one power supply contact 844. In some examples, the power supply contact 844 of electrode segment 830-4 and the line passing through the center of electrode segment 830-4 are offset by 60° to 120° in the rotational direction relative to the power supply contact 844 of electrode segment 830-3 and the line passing through the center of electrode segment 830-3.

[0103] Shifting the rotational position of the power supply contacts of electrode segments 830-1, 830-2, 830-3, and 830-4 helps reduce noise and / or crosstalk.

[0104] In Figure 14, multiple fasteners 850 are arranged within a threaded cavity 840 located on the shroud ring 810. The outer ring 820 and electrode segments 830-1, 830-2, 830-3, and 830-4 each contain multiple fasteners 860 arranged in threaded cavities 840 around circles 862, 864-1, 864-2, 864-3, and 864-4, respectively. In some examples, the concentric circles 864-1, 864-2, 864-3, and 864-4 are approximately radially centered between circles 834-1 and 836-1, 834-2 and 836-2, 834-3 and 836-3, and 834-4 and 836-4 of the gas through-hole 832, respectively. In some examples, the pin alignment holes 842 and / or power supply contacts 844 are also located on or near circles 862, 864-1, 864-2, 864-3, and 864-4.

[0105] As can be understood, the design of segmented electrodes is flexible and can be modified for different applications. For example, the radial distance from the center of segmented electrode 830 to the radially outer edge on the bottom surface of the corresponding electrode segments 830-1, 830-2, 830-3, and 830-4 can be varied. In some examples, the minimum plasma plane centerline D1 of electrode segment 830-4 is in the range of 37.755 mm to 49.34 mm. In some examples, the minimum plasma plane centerline D2 of electrode segment 830-3 is in the range of 77.525 mm to 85.295 mm. In some examples, the minimum plasma plane centerline D3 of electrode segment 830-2 is in the range of 112.57 mm to 121.545 mm. In some examples, the minimum plasma plane centerline D4 of electrode segment 830-1 is in the range of 152.95 mm to 164.75 mm (for example, for a substrate with a radius of 156.75 mm).

[0106] Referring here to Figure 15, one side of the segmented electrode assembly 800 is shown in more detail. The shroud ring 810 includes an annular body 910 which includes an upper part 911 defining an inner cavity 915 (for receiving the outer ring 820 and segmented electrodes 830), a side wall 912, and a lower part 913. In some examples, the upper part 911, the side wall 912, and the lower part 913 define a 90° rotated "U" cross section. The side wall 912 connects to the radially outer edges of the upper part 911 and the lower part 913. The radially inner edge of the lower part 913 includes an extension 914 projecting downward. The radially inner edge of the upper part 911 includes a projection 916 (or lip) extending from the radially inner and lower edges of the upper part 911.

[0107] The outer ring 820 includes an annular body 920, which includes an upper surface 922 and a lower surface 924. A projection 926 extends downward from the lower surface 924 at the radially outer edge of the annular body 920. A projection 928 (or lip) extends radially inward from the lower and radially inner edge of the annular body 920. In some examples, a curved surface 929 is positioned between the projection 926 and the lower surface 924.

[0108] The electrode segment 830-1 includes an annular body 940, which has an upper surface 942 and a lower surface 944. The projection 946 protrudes radially outward from the upper and radially outer edge of the annular body 940. The projection 948 extends radially inward from the lower and radially inner edge of the annular body 940.

[0109] Electrode segment 830-2 includes an annular body 950, which has an upper surface 952 and a lower surface 954. Projections 956 project radially outward from the middle and radially outer edges of the annular body 950. Projections 956 are located above and adjacent to projection 948 of electrode segment 830-1. The upper edge of projection 956 is spaced apart from the upper surface 952 to allow a barrier seal (Figure 16) to be positioned between the radially opposing surfaces of electrode segment 830-2 and electrode segment 830-1. Projections 958 extend radially inward from the lower and radially inner edge of the annular body 950.

[0110] Electrode segment 830-3 includes an annular body 960, which has an upper surface 962 and a lower surface 964. Projections 966 project radially outward from the middle and radially outer edges of the annular body 960. Projections 966 are located above projection 958 of electrode segment 830-2. The upper edge of projection 966 is spaced apart from the upper surface 962, allowing a seal to be placed between electrode segment 830-3 and electrode segment 830-2. Projections 968 extend radially inward from the middle and radially inner edges of the annular body 960.

[0111] Electrode segment 830-4 includes an annular body 970, which has an upper surface 972 and a lower surface 974. Projection 976 protrudes radially outward from the lower and radially outer edge of the annular body 970. Projection 976 extends below projection 968 of electrode segment 830-3. One end of fastener 860 is shown attached to one end of threaded cavity 840.

[0112] Referring here to Figure 16, an example of the interface region between electrodes 830-1 and 830-2 is shown in more detail. The radial outer surface of electrode segment 830-2 includes a projection 956. The upper and radial outer surface 990 of the annular body 950 located above the projection 956 defines a predetermined gap g2 with respect to the radial inner surface 991 of electrode segment 830-1. The lower and radial outer surface 992 of the annular body 950 located below the projection 956 defines a predetermined gap g1 with respect to the radial inner surface 993 of electrode segment 830-1. In some examples, g2 is greater than g1. In some examples, the predetermined gap g1 is in the range of 1 mm to 3 mm. Controlling the gap offers several advantages, including reduction of arc discharge and similar capacitive coupling from one segment to another.

[0113] In some examples, the annular body of the barrier seal 994 is positioned in a predetermined gap g2 between the radial inner surface 991 of electrode segment 830-1 and the radial outer surface 990 of electrode segment 830-2. Although the barrier seal 994 is shown with a circular cross-section (e.g., in a compressed state), the barrier seal 994 may have other cross-sectional shapes. In some examples, the lower and radial inner surface 993 of electrode segment 830-1 is positioned radially inward from the radially outer edge of the projection 956 to prevent a line of sight from the plasma to the barrier seal 994.

[0114] As seen in Figures 15 and 16, the opposing surfaces of electrode segments 830-1, 830-2, 830-3, and 830-4 define a meandering path including both vertical and horizontal portions, preventing a line of sight from the plasma to the barrier seal 994 (for example, preventing ionic erosion and / or other damage to the barrier seal if the seal is eroded). Specific examples of segmented electrodes show protrusions positioned at specific locations, although the positions of the protrusions can vary. In some examples, each of the segmented electrodes includes radial protrusions that radially overlap with the radial protrusions of adjacent electrode segments to prevent a line of sight. For example, one opposing radial surface includes a lower protrusion, and the adjacent electrode segment includes an intermediate protrusion (or upper protrusion if a barrier seal is not used).

[0115] The above description is essentially illustrative and is not intended to limit the Disclosure, its uses, or applications. The broad teachings of this Disclosure can be implemented in various forms. Therefore, while this Disclosure includes certain examples, the true scope of this Disclosure should not be limited in this way, as other modifications become apparent when considering the drawings, specification, and appended claims. It should be understood that one or more steps in the Method can be performed in different orders (or simultaneously) without altering the principles of this Disclosure. Furthermore, while each implementation is described above as having specific features, any one or more of those features described with respect to any implementation of this Disclosure can be implemented in and / or combined with any feature of any other implementation, even if the combination is not explicitly described. In other words, the described implementations are not mutually exclusive, and permutations of one or more implementations remain within the scope of this Disclosure.

[0116] Spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using a variety of terms, including “connected,” “engaged,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “disposed.” Unless explicitly stated to be “direct,” if a relationship between a first and second element is described in the above disclosure, that relationship may be a direct relationship in which no other intervening elements exist between the first and second elements, or it may be an indirect relationship in which one or more intervening elements exist between the first and second elements (spatially or functionally). As used herein, the phrase "at least one of A, B, and C" should be interpreted as meaning a logic operation (A OR B OR C) using nonexclusive OR, and not as meaning "at least one of A, at least one of B, and at least one of C."

[0117] In some implementations, the controller is part of a system, which may be part of the examples described above. Such a system may comprise a semiconductor processing apparatus comprising one or more process tools, one or more chambers, one or more platforms for processing, and / or specific processing components (such as wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling pre-processing, in-processing, and post-processing operations of semiconductor wafers or substrates. The electronics may be referred to as “controllers” that can control various components or sub-components of one or more systems. Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, devices connected to or interfaced with a particular system, and loading and unloading wafers into and out of other transport devices and / or load locks.

[0118] Broadly speaking, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers (e.g., software) that execute program instructions. Program instructions may also be instructions communicated to the controller in the form of various individual settings (or program files) that define operating parameters for performing a particular process on a semiconductor wafer or system. In some implementations, operating parameters may be part of a recipe defined by a process engineer to achieve one or more process steps during the manufacturing of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0119] In some implementations, the controller may be part of, or coupled to, a computer integrated with, coupled to, or otherwise networked to, the system, or a combination thereof. For example, the controller may be all or part of a “cloud” or fab-host computer system, enabling remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a processing operation, to investigate the history of past processing operations, to investigate trends or performance metrics from multiple processing operations, to change the parameters of the current processing, to set process steps to follow the current processing, or to start a new processing. In some examples, the remote computer (e.g., a server) may provide process recipes to the system over a network that may include a local network or the internet. The remote computer may include a user interface that allows input or programming of parameters and / or settings, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data, and the instructions specify the parameters of each process step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool that the controller is configured to interface with or control. Therefore, as described above, the controllers may be distributed, for example, by comprising one or more individual controllers that are networked together and operate toward a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes is one or more integrated circuits on a chamber that communicate with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer) which are combined to control the processes on the chamber.

[0120] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, clean chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems related to or usable in the fabrication and / or manufacture of semiconductor wafers.

[0121] As described above, depending on one or more process steps performed by the tool, the controller may communicate with one or more of the following: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, the main computer, another controller, or tools used for material transport that carry wafer containers to and from tool locations and / or load ports in the semiconductor manufacturing plant. [Explanation of symbols]

[0122] 100 Substrate processing system, 102 Processing chamber, 104 Gas distribution device, 106 Substrate support, 108 Substrate, 110 Base plate, 112 Top plate, 114 Bonding layer, 116 Coolant channel, 118 Edge ring, 130 Gas delivery system, 132 Gas source, 134 Flow meter, 140 Manifold, 142 Temperature controller, 144 Heating element, 146 Coolant assembly, 148 Gas line, 150 Valve, 152 Pump, 154 Plasma generator, 156 RF source, 158 Matching network, 160 Controller, 161 Robot, 170 Vapor delivery system, 174 Ampoule, 176 Vaporizer, 178 Flow meter, 182 Gas plenum, 184 Gas through-hole, 186 Non-segmented electrode, 200 Substrate processing system, 220 Electrode, 240 RF plasma generator, 242 RF source, 244 Matching network, 248 Plasma density controller, 252 Sensing circuit, 256 Segment control circuit, 270 Impedance change circuit, 272 Variable impedance, 274 Voltage change circuit, 276 Variable voltage source, 278 Current change circuit, 280 Current source, 310 Segmented electrode, 312 Segment, 313 Gap, 332 Switch, 350 Adjustment circuit, 414 Cooling plate, 415 Cooling channel, 416 Thermal interface layer, 418 Heating plate, 419 Resistive heater, 422 Gas distribution plate, 426 Barrier layer, 430 Thermal gasket layer, 439 Gap, 440 Electrode, 441 Filling material, 443 Gap, 447 Substrate, 449 Plasma resistance layer, 450 Step difference, 451 Substrate facing surface, 453 457 Insulating layer, 462 Substrate facing surface, 465 Intermediate section, 466 Plane, 474 Substrate facing surface, 478 Substrate facing surface, 482 Intermediate section, 490 Facing surface, 500 Segmented electrode, 520 Pattern, 522 Gas through-hole, 524 Cavity, 600 Segmented electrode, 610 Thermal gasket, 620 Barrier layer, 630 O-ring, 632 Gap, 800 Segmented electrode assembly, 810 Shroud ring, 820 Outer ring, 822 Gas through-hole, 824 Circle, 830 Segmented electrode, Segmented electrode, 832 Gas through-hole, 834-1 Circle, 834-2 Circle, 834-3Yen, 834-4 yen, 836-1 yen, 836-2 yen, 836-3 yen, 836-4 yen, 840 threaded cavity, 842 pin alignment hole, 844 power supply contact, 850 fastener, 860 fastener, 862 yen, 910 annular body, 911 top, 912 side wall, 913 bottom, 914 extension, 915 inner cavity, 916 projection, 920 annular body, 922 top surface, 924 bottom surface, 926 projection, 928 projection, 929 surface, 940 annular body, 942 top surface, 944 bottom surface, 946 projection, 948 projection, 950 annular body, 952 top surface, 954 bottom surface, 956 projection, 958 projection, 960 Ring-shaped body, 962 top surface, 964 bottom surface, 966 projection, 968 projection, 970 ring-shaped body, 972 top surface, 974 bottom surface, 976 projection, 990 radial outer surface, 991 radial inner surface, 992 radial outer surface, 993 radial inner surface, 994 barrier seal

Claims

1. A substrate support including a first electrode is placed inside the processing chamber, A second electrode is positioned above the substrate support and includes S segments arranged concentrically with gaps between them, wherein S is an integer greater than 1. A segment control circuit comprising M impedances connected to M of the S segments of the second electrode, wherein M is an integer greater than 0 and less than or equal to S, and the M impedances are selected from the group consisting of resistors, inductors, capacitors, and combinations thereof. A plasma generator configured to supply an RF voltage to the first electrode in order to generate and maintain plasma within the processing chamber, A plasma processing system for processing substrates, comprising the following components.

2. The plasma processing system according to claim 1, wherein at least one of the M impedances is a fixed impedance.

3. The plasma processing system according to claim 1, wherein at least one of the M impedances is a variable impedance.

4. The plasma processing system according to claim 3, further comprising a plasma density controller configured to adjust the variable impedance of at least one of the M impedances.

5. The plasma processing system according to claim 4, further comprising at least one of a photon probe and a thermocouple configured to sense the temperature of at least one of the S segments, wherein the plasma density controller is configured to adjust the variable impedance of at least one of the S segments in accordance with the temperature.

6. The plasma processing system according to claim 1, wherein S is greater than 2 and less than or equal to 6.

7. The plasma processing system according to claim 1, wherein M is greater than 2 and less than or equal to 6.

8. The plasma processing system according to claim 1, wherein M is equal to S.

9. The plasma processing system according to claim 1, further comprising M switches connected in parallel to the M impedances for selectively short-circuiting one corresponding impedance among the M impedances and grounding one corresponding segment among the S segments.

10. The plasma processing system according to claim 9, wherein the M impedances of the M corresponding segments among the S segments are independently tuned with respect to DC and at least one plasma excitation frequency.

11. The plasma processing system according to claim 9, wherein the plasma generator includes a plurality of power settings for pulsed plasma, and the M impedances of the M corresponding segments of the S segments are adjusted for at least two of the plurality of power settings.

12. The plasma processing system according to claim 1, wherein the sides of the S segments are configured to prevent a line of sight from the plasma through the gap.

13. The plasma processing system according to claim 1, wherein the sides of the S segments are either stepped or inclined.

14. The plasma processing system according to claim 1, wherein the S segments include gas through holes.

15. The plasma processing system according to claim 1, wherein the M impedances include the resistor and at least one of the inductor and the capacitor.

16. The plasma processing system according to claim 1, wherein the S segments include a plurality of gas penetration holes.

17. Cooling plate and A heating plate is positioned adjacent to the cooling plate, A thermal gasket is provided, which is positioned adjacent to the upper surface of the S segments and includes holes for gas penetrations and for receiving fasteners connected to the S segments. A barrier layer positioned adjacent to the aforementioned heat gasket, A gas distribution plate is disposed between the barrier layer and the heating plate and is in fluid communication with the plurality of gas through holes of the S segments, The plasma processing system according to claim 16, further comprising:

18. The plasma treatment system according to claim 17, wherein the thermal gasket comprises a plurality of zones, and at least two of the zones are made of different materials or have different thicknesses.

19. The plasma processing system according to claim 1, wherein the S segments are made of a material selected from the group consisting of silicon, polysilicon, silicon carbide, ceramic, and quartz.

20. The plasma processing system according to claim 1, wherein at least one of the S segments includes a substrate made of a first material and a plasma-resistant layer disposed on the substrate and made of a second material different from the first material.

21. The plasma processing system according to claim 20, wherein the substrate is made of a material selected from the group consisting of stainless steel, aluminum, and silicon.

22. The plasma treatment system according to claim 20, wherein the plasma-resistant layer is made of a material selected from the group consisting of silicon, polysilicon, silicon carbide, ceramic, and quartz.

23. The plasma treatment system according to claim 22, wherein the plasma-resistant layer has a thickness in the range of 20 μm to 500 μm.

24. The plasma processing system according to claim 1, further comprising an insulating material disposed in the gap between adjacent segments among the S segments.

25. The plasma processing system according to claim 1, further comprising a voltage changing circuit including M voltage sources connected to M of the S segments.

26. The plasma processing system according to claim 1, further comprising a current changing circuit including M current sources connected to M of the S segments.

27. The plasma processing system according to claim 1, wherein at least one of the S segments has a different thickness from another of the S segments.

28. The plasma processing system according to claim 1, wherein the S segments include bottom surfaces that lie on the same plane.

29. The plasma processing system according to claim 1, wherein the bottom surface of at least one of the S segments is not coplanar with the bottom surface of another of the S segments.

30. The plasma processing system according to claim 1, wherein the substrate-facing surface of at least one of the S segments has a slope with respect to a plane parallel to the plane including the top surface of the substrate support.

31. The plasma processing system according to claim 1, wherein the edge of at least one of the S segments facing the substrate is tapered.

32. The steps include: placing the substrate on the substrate support inside the processing chamber; The steps include supplying an RF voltage to the first electrode in the substrate support, Steps include: arranging a second electrode, which is positioned above a substrate support and includes S segments arranged concentrically with gaps between them, where S is an integer greater than 1; A step of connecting M impedances to M of the S segments of the second electrode, wherein M is an integer greater than 0 and less than or equal to S. The M impedances are selected from the group consisting of resistors, inductors, capacitors, and combinations thereof, and the following steps are performed: The steps include supplying an RF voltage to the first electrode in order to generate and maintain plasma within the processing chamber, A method for processing a substrate, comprising the following components.

33. The method according to claim 32, wherein at least one of the M impedances is a fixed impedance.

34. The method according to claim 32, wherein at least one of the M impedances is a variable impedance.

35. The method according to claim 34, further comprising the steps of sensing a parameter of at least one segment of the S segments, and adjusting the variable impedance of at least one of the M impedances based on the parameter.

36. The method according to claim 35, further comprising the step of using the parameters to detect a hardware failure.

37. The method of claim 35, further comprising the step of using the parameters to detect the deposition of a film on the second electrode.

38. The method according to claim 35, wherein the parameter includes the temperature of at least one of the S segments.

39. The method according to claim 32, wherein S is greater than 2 and less than or equal to 6.

40. The method according to claim 32, wherein M is greater than 2 and less than or equal to 6.

41. The method according to claim 32, wherein M is equal to S.

42. The method according to claim 32, further comprising the step of using M switches connected in parallel to the M impedances to selectively short-circuit one corresponding one of the M impedances and ground one corresponding one of the S segments.

43. The method according to claim 32, wherein the sides of the S segments are configured to prevent a line of sight from the plasma through the gap.

44. The method according to claim 32, wherein the sides of the S segments are stepped.

45. The method according to claim 32, wherein the sides of the S segments are inclined.

46. The method according to claim 32, wherein the S segments include gas penetration holes.

47. The method according to claim 32, wherein the M impedances include the resistor and at least one of the inductor and the capacitor.

48. The method according to claim 32, wherein the S segments are made from a material selected from the group consisting of silicon, polysilicon, silicon carbide, ceramic, and quartz.

49. The method according to claim 32, wherein at least one of the S segments includes a substrate made of a first material and a plasma-resistant layer disposed on the substrate.

50. The method according to claim 49, wherein the plasma-resistant layer is made of a material selected from the group consisting of silicon, polysilicon carbide, and ceramic.

51. The method according to claim 50, wherein the plasma-resistant layer has a thickness in the range of 20 μm to 500 μm.

52. The method according to claim 32, further comprising the step of placing a filler material between adjacent segments of the S segments.

53. The method according to claim 32, further comprising the step of placing an insulating layer on the side surface of at least one segment of the S segments, wherein the side surface is arranged to be orthogonal to the plane including the substrate.

54. The method according to claim 32, further comprising the step of connecting M voltage sources to M of the S segments, respectively.

55. The method according to claim 32, further comprising the step of connecting M current sources to M of the S segments.

56. The method according to claim 32, wherein at least one of the S segments has a different thickness from the other of the S segments.

57. The method according to claim 32, wherein the S segments include bottom surfaces that lie on the same plane.

58. The method according to claim 32, wherein at least one bottom surface of the S segments is not coplanar with another bottom surface of the S segments.

59. The method according to claim 32, wherein the bottom surface of at least one of the S segments includes either a convex portion or a concave portion.

60. The method according to claim 32, further comprising the step of tapering a substrate facing the edge of at least one of the S segments.

61. The method according to claim 32, wherein the substrate-facing surface of at least one of the S segments is sloped with respect to a plane parallel to the plane including the top surface of the substrate support.

62. Processing chamber and A substrate support having a first electrode is placed inside the processing chamber, A second electrode is positioned above the substrate support and includes S segments arranged concentrically with gaps between them, wherein S is an integer greater than 1. A segment control circuit comprising M changing circuits connected to M segments out of the S segments of the second electrode, wherein M is an integer greater than 0 and less than or equal to S, and the M changing circuits are configured to change at least one of the impedance, voltage, and current of the M segments out of the S segments relative to ground, A plasma generator configured to supply an RF voltage to the first electrode in order to generate and maintain plasma within the processing chamber, A plasma processing system for processing substrates, comprising the following components.

63. The plasma processing system according to claim 62, further comprising a plasma density controller configured to adjust at least one of the impedance, voltage, and current.

64. The plasma processing system according to claim 62, further comprising a sensor configured to sense the parameters of at least one of the M segments among the S segments, wherein one of the M changing circuits is configured to adjust at least one of the impedance, voltage, and current in response to the parameters.

65. S electrode segments, where S is an integer greater than 1, Of the S electrode segments, S-1 has an annular shape. Of the S electrode segments, one electrode segment number S has a circular shape. The S electrode segments are arranged concentrically and have gaps between them, Each of the S electrode segments is The first set of gas penetration holes, A plurality of fasteners are attached to its upper surface and arranged adjacent to the first set of gas through holes, Equipped with, S electrode segments A segmented electrode for a substrate processing system, comprising the above features.

66. Each of the S electrode segments is The present invention further comprises a second set of gas through-holes located radially inward of the first set of gas through-holes, The plurality of fasteners are arranged between the first set of gas through holes and the second set of gas through holes. The segmented electrode according to claim 65.

67. The segmented electrode according to claim 65, wherein S is equal to 4.

68. The segmented electrode according to claim 66, wherein each of the S electrode segments includes a plurality of pin alignment holes.

69. The segmented electrode according to claim 68, wherein the plurality of pin alignment holes are arranged between the first set of gas through holes and the second set of gas through holes.

70. The segmented electrode according to claim 66, wherein each of the S electrode segments includes a power supply contact.

71. The segmented electrode according to claim 70, wherein the power supply contact is positioned between the first set of gas through-holes and the second set of gas through-holes.

72. The segmented electrode according to claim 65, wherein S-2 of the S electrode segments include a plurality of power supply contacts.

73. The segmented electrode according to claim 72, wherein each of the S-2 power supply contacts of the S electrode segments is rotated relative to the other S-2 of the S electrode segments.

74. The segmented electrode according to claim 65, wherein the gap is in the range of 1 mm to 3 mm.

75. The segmented electrode according to claim 66, wherein each of the S electrode segments includes a plurality of pin alignment holes and at least one power supply contact.

76. The segmented electrode according to claim 75, wherein the plurality of pin alignment holes and the at least one power supply contact of each of the S electrode segments are arranged between a corresponding one of the first set of gas through holes and the second set of gas through holes.

77. The radial inner surface and radial outer surface of at least one electrode segment of the S electrode segments are The segmented electrode according to claim 65, comprising a first radial projection and a second radial projection, respectively.

78. The first radial projection on the radial inner surface overlaps perpendicularly with the radial projection of the first adjacent electrode segment among the S electrode segments. The second radial projection on the radial outer surface overlaps perpendicularly with the radial projection of the second adjacent electrode segment among the S electrode segments. The segmented electrode according to claim 77.

79. The segmented electrode according to claim 65, further comprising an outer ring disposed around the radially outer edge of the segmented electrode.

80. The segmented electrode according to claim 79, wherein the outer ring includes a radial projection extending below a radial projection extending radially outward from the radially outer segment of the S electrode segments.

81. The segmented electrode according to claim 80, wherein the outer ring includes a downward projection extending downward from the radially inner end of the outer ring.

82. A system comprising a segmented electrode according to claim 81, further comprising a shroud ring including an annular body including a radially inner side including a radial projection, wherein the lower projection of the outer ring rests on the radial projection on the radially inner side of the annular body of the shroud.

83. One of the ring-shaped and circular bodies, A first set of gas penetration holes arranged in one of the annular body and the circular body, A second set of gas penetration holes is provided in one of the annular body and the circular body, A plurality of fasteners attached to one of the top ends of the annular body and the circular body, and positioned between the first set of gas through holes and the second set of gas through holes, An electrode segment for segmented electrodes in a plasma processing system, comprising the above features.

84. The electrode segment according to claim 83, further comprising a plurality of pin alignment holes arranged in one of the annular body and the circular body.

85. The electrode segment according to claim 84, wherein the plurality of pin alignment holes are arranged between the first set of gas through holes and the second set of gas through holes.

86. The electrode segment according to claim 83, further comprising a power supply contact disposed on one of the annular body and the circular body.

87. The electrode segment according to claim 86, wherein the power supply contacts are arranged between the first set of gas through-holes and the second set of gas through-holes.

88. The electrode segment according to claim 83, further comprising a plurality of power supply contacts arranged on one of the annular body and the circular body.

89. The electrode segment according to claim 83, further comprising a plurality of pin alignment holes and at least one power supply contact disposed in one of the annular body and the circular body.

90. The electrode segment according to claim 89, wherein the plurality of pin alignment holes and the at least one power supply contact are arranged between the first set of gas through holes and the second set of gas through holes.

91. One of the annular body and the circular body includes the annular body, The radial inner surface and radial outer surface of the annular body each include a first radial projection and a second radial projection, The electrode segment according to claim 83.

92. The first radial projection on the radial inner surface is configured to overlap with the radial projection of the first adjacent electrode segment. The second radial projection on the radially outer surface is configured to overlap with the radial projection on the second adjacent electrode segment. The electrode segment according to claim 91.

93. One of the aforementioned annular body and the aforementioned circular body includes the aforementioned circular body, The radial outer surface of the circular body has radial projections. The electrode segment according to claim 83.

94. The electrode segment according to claim 93, wherein the radial projection on the radially outer surface of the circular body is configured to overlap with a radial projection on an adjacent electrode segment.

95. One of the ring-shaped and circular bodies, A first set of gas penetration holes arranged in one of the annular body and the circular body, A second set of gas penetration holes is provided in one of the annular body and the circular body, Between the first set of gas through-holes and the second set of gas through-holes, a plurality of pin alignment holes and at least one power supply contact are arranged in one of the annular body and the circular body, An electrode segment for segmented electrodes in a plasma processing system, comprising the above features.

96. Ring-shaped body and A first set of gas through-holes arranged in the annular body, A second set of gas through-holes arranged on one side of the annular body, Between the first set of gas through-holes and the second set of gas through-holes, at least one of the annular body and a pin alignment hole, power supply contact, and fastener disposed in one of the annular bodies, A first radial projection is positioned on the radial inner surface of the annular body and is configured to overlap with a radial projection on the first adjacent electrode segment, A second radial projection is positioned on the radially outer surface of the annular body and is configured to overlap with a radial projection on a second adjacent electrode segment, An electrode segment for segmented electrodes in a plasma processing system, comprising the above features.

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