Organic light-emitting display device

Abstract

An organic light-emitting display may include a bank between upper subpixels, an anode electrode on each subpixel, an organic light-emitting layer disposed on the anode electrode and the bank and containing a hole injection layer, a cathode electrode disposed on the organic light-emitting layer and in contact with the edge of the hole injection layer, and a shielding structure in the edge region of the bank. The organic light-emitting layer has a separation structure corresponding to the shielding structure, and the hole injection layer is disconnected in the separation structure.

Description

[Technical Field]

[0001] The examples relate to organic light-emitting devices. [Background technology]

[0002] As the demand for portable information media increases, attempts to apply organic light-emitting devices (OLEDs) to a variety of lightweight and thin information electronic devices are expanding. Recently, OLEDs tend to be applied to product groups such as mobile PCs and automobiles rather than televisions and mobile phones. OLEDs applied to mobile PCs and automobiles require a long lifespan because they are driven by still images for extended periods. To achieve a long lifespan, it is necessary to maximize the extraction of light from the OLEDs. Furthermore, to achieve low costs, it is necessary to expand the technology to produce OLEDs not only on 8.5th generation (2200 x 2500 mm) substrates but also on 10.5th generation (3370 x 2940 mm) substrates 110. To produce long-life OLEDs, the structure must be such that each subpixel, which has a top-emission structure but also a side-by-side structure, is represented by two or more stacks of OLEDs.

[0003] Such organic light-emitting elements can be created using a deposition system that utilizes a fine metal mask (FMM). However, the deposition method using FMMs has the problem of low productivity because production and logistics must be done in a cluster system rather than an in-line system. In addition, there is a problem of reduced subpixel-level alignment position accuracy (PPA) between the FMM and the substrate. As a result, the product lifespan is limited due to a small luminous area ratio (EAR). Here, the luminous area ratio is the value obtained by dividing the luminous area of ​​a subpixel by the area of ​​the subpixel.

[0004] Therefore, the development of a new deposition method to solve the aforementioned problems, and an organic light-emitting device having a new organic light-emitting structure utilizing this new deposition method, is extremely urgent. [Overview of the Initiative] [Problems that the invention aims to solve]

[0005] The embodiments aim to solve the aforementioned problems and other problems.

[0006] Another objective of the embodiment is to provide an organic light-emitting display device having a novel structure.

[0007] Another objective of the embodiment is to provide an organic light-emitting device that can improve its lifespan.

[0008] Another objective of the examples is to provide an organic light-emitting device that can improve productivity and yield.

[0009] Another objective of the embodiment is to provide an organic light-emitting display device that can improve image quality.

[0010] The technical problems of the embodiments are not limited to those described in this section, but also include those that can be understood from the description of the invention. [Means for solving the problem]

[0011] To achieve the aforementioned or otherwise objective, according to one aspect of the embodiment, the organic light-emitting display device includes a bank between subpixels on a substrate, an anode electrode on the subpixel, an organic light-emitting layer disposed on the anode electrode and the bank and including a hole injection layer, a cathode electrode disposed on the organic light-emitting layer and in contact with the edge of the hole injection layer, and a blocking structure in the edge region of the bank, wherein the organic light-emitting layer has a separation structure corresponding to the blocking structure, and the hole injection layer is interrupted in the separation structure.

[0012] The blocking structure may include at least one blocking layer that extends inward from the side of the bank.

[0013] The shielding structure may have an undercut structure having a shielding gap corresponding to the width of the shielding layer. The margin of the shielding gap can be set between the distance between the cathode electrode and the second organic light-emitting stack in the red organic light-emitting element having the greatest thickness and the distance between the anode electrode and the cathode electrode in the blue organic light-emitting element having the smallest thickness.

[0014] The thickness of the aforementioned barrier gap can be set based on a barrier gap setting method calculated from the thickness of organic light-emitting elements of each color, and based on deposition simulation experiments and actual deposition experiments.

[0015] The organic light-emitting layer may include a first organic light-emitting stack between the hole injection layer and the charge generation layer, and a second organic light-emitting stack between the charge generation layer and the cathode electrode. The cathode electrode may be in contact with the edge of the charge generation layer.

[0016] The first organic light-emitting layer and the charge-generating layer are separated in the separation structure.

[0017] The cathode electrode may include at least one of a first conductive layer or a second conductive layer. The first conductive layer may contain an Mg:Ag alloy, and the second conductive layer may contain a conductive oxide material.

[0018] The organic light-emitting display device may further include a protrusion on the upper side of the bank. The protrusion may have a connecting structure that includes an auxiliary electrode electrically connected to the cathode electrode. The protrusion may include a first layer and a second layer on the first layer. The connecting structure may have an undercut structure on the side of the first layer that extends inward from the side of the second layer into the protrusion.

[0019] The second conductive layer is disposed on the first conductive layer, the first conductive layer is disposed on the organic light-emitting layer, and the second conductive layer may be in contact with a side portion of the first layer and a lower side of the second layer.

[0020] The protruding portion may further include a third layer under the first layer. A side portion of the third layer may be located on the same line as a side portion of the second layer, or may extend from the side portion of the second layer toward the subpixel.

[0021] At least one of the first layer, the second layer, or the third layer may be the auxiliary electrode.

[0022] The hole injection layer is disposed on the third layer, and the first conductive layer may be in contact with an end portion of the hole injection layer and an upper side of the third layer.

[0023] The second conductive layer is disposed on the first conductive layer, the first conductive layer is disposed on the organic light-emitting layer, and the second conductive layer may be in contact with a side portion of the first layer, a lower side of the second layer, an end portion of the hole injection layer, and an upper side of the third layer.

[0024] The protruding portion may further include a fourth layer on the second layer. Effects of the Invention

[0025] The effects of the organic light-emitting display device according to the embodiments will be described as follows.

[0026] According to at least one of the embodiments, since there is no need to use FMM, the process is simplified, and there is an advantage that process costs can be reduced.

[0027] According to at least one of the embodiments, since there is no need to use FMM, there is an advantage that the EAR in a subpixel is increased, and the service life is improved.

[0028] According to at least one of the examples, the deposition of organic light-emitting elements on a large-area substrate in an in-line deposition system offers the advantages of improved productivity, yield, and material utilization efficiency.

[0029] The further scope of applicability of the examples will become clear from the detailed description below. It should be understood that the detailed description and specific examples, such as preferred embodiments, are merely illustrative, as various changes and modifications within the concept and scope of the examples should be clearly understood by those skilled in the art. [Brief explanation of the drawing]

[0030] [Figure 1] Figure 1 is a schematic plan view illustrating an organic light-emitting display device according to the first embodiment. [Figure 2] Figure 2 is a plan view illustrating one pixel in Figure 1. [Figure 3] Figure 3 is a circuit diagram illustrating an organic light-emitting display device according to an embodiment. [Figure 4A] Figure 4A is a cross-sectional view obtained by cutting along the A-A' line at the pixels in Figure 2. [Figure 4B] Figure 4B is a cross-sectional view obtained by cutting along the B-B' line at the pixel in Figure 2. [Figure 4C] Figure 4C is a cross-sectional view obtained by cutting along the C-C' line at the pixel in Figure 2. [Figure 5] Figure 5 is a cross-sectional view illustrating an organic light-emitting device according to the first embodiment. [Figure 6] Figure 6 is a cross-sectional view illustrating an organic light-emitting display device according to the second embodiment. [Figure 7] Figure 7 is a cross-sectional view illustrating an organic light-emitting device according to the third embodiment. [Figure 8A] Figure 8A is a cross-sectional view illustrating an organic light-emitting device according to the fourth embodiment. [Figure 8B] Figure 8B is a cross-sectional view illustrating the connection structure in the asymmetrical disconnection connection structure shown in Figure 8A. [Figure 8C]Figure 8C is a cross-sectional view illustrating the blocking structure in the asymmetric blocking connection structure shown in Figure 8A. [Figure 9] Figure 9 shows an organic light-emitting element stacked in a two-stack structure on each subpixel according to the example. [Figure 10A] Figure 10A is a cross-sectional view illustrating an organic light-emitting device according to the fifth embodiment. [Figure 10B] Figure 10B is a cross-sectional view illustrating the connection structure in the asymmetrical disconnection connection structure shown in Figure 10A. [Figure 10C] Figure 10C is a cross-sectional view illustrating the blocking structure in the asymmetric blocking connection structure shown in Figure 10A. [Figure 11] Figure 11 shows the deposition simulation results of a green organic light-emitting element deposited around the undercut structure of the barrier structure. [Figure 12A] Figure 12A shows various protrusions. [Figure 12B] Figure 12B shows various protrusions. [Figure 12C] Figure 12C shows various protrusions. [Figure 12D] Figure 12D shows various protrusions. [Figure 12E] Figure 12E shows various protrusions. [Figure 12F] Figure 12F shows various protrusions. [Figure 12G] Figure 12G shows various protrusions. [Figure 13A] Figure 13A shows various arrangement positions of the blocking structure in the asymmetric blocking connection structure according to the embodiment. [Figure 13B] Figure 13A shows various arrangement positions of the blocking structure in the asymmetric blocking connection structure according to the embodiment. [Figure 13C] Figure 13C shows various arrangement positions of the blocking structure in the asymmetric blocking connection structure according to the embodiment. [Figure 14] Figure 14 is a cross-sectional view illustrating an organic light-emitting device according to the sixth embodiment. [Figure 15] Figure 15 is a cross-sectional view illustrating an organic light-emitting device according to the seventh embodiment. [Figure 16] Figure 16 is a cross-sectional view illustrating an organic light-emitting device according to the eighth embodiment. [Figure 17] Figure 17 is a cross-sectional view illustrating an organic light-emitting device according to the ninth embodiment. [Figure 18A] Figure 18A shows at least one additional layer added between the electron injection layer and the cathode electrode of the second organic light-emitting stack. [Figure 18B] Figure 18A shows at least one additional layer added between the electron injection layer and the cathode electrode of the second organic light-emitting stack. [Figure 18C] Figure 18A shows at least one additional layer added between the electron injection layer and the cathode electrode of the second organic light-emitting stack. [Figure 18D] Figure 18D shows at least one additional layer added between the electron injection layer and the cathode electrode of the second organic light-emitting stack. [Figure 19A] Figure 19A shows the simulation results for brightness according to the thickness of the capping layer containing LiF in the comparative example and the example. [Figure 19B] Figure 19A shows the simulation results for brightness according to the thickness of the capping layer containing LiF in the comparative example and the example. [Figure 19C] Figure 19C shows the simulation results for brightness as a function of thickness of the capping layer containing LiF in the comparative example and the example. [Figure 20] Figure 20 is a schematic plan view illustrating an organic light-emitting display device according to the second embodiment. [Figure 21] Figure 21 is a plan view illustrating one pixel in Figure 20.

[0031] The size, shape, and numerical values ​​of the components shown in the drawings do not necessarily correspond to reality. Furthermore, even if the same component is shown with different sizes, shapes, and numerical values ​​in different drawings, this is merely one example on the drawing, and the same component can have the same size, shape, and numerical values ​​in different drawings. [Modes for carrying out the invention]

[0032] The embodiments disclosed herein will be described in detail below with reference to the attached drawings, but identical or similar components will be given the same reference numeral regardless of the drawing reference numerals, and redundant descriptions will be omitted. The suffixes “module” and “part” used for components in the following description are given or used interchangeably for the sake of facilitating the writing of the specification and do not have any distinguishing meaning or role in themselves. The attached drawings are provided to facilitate understanding of the embodiments disclosed herein and do not limit the technical ideas disclosed herein. Furthermore, when an element such as a layer, region, or substrate 110 is referred to as being “on” another component, this includes elements that are directly on other elements or elements that may have other intermediate elements between them.

[0033] The following discloses an organic light-emitting device with a side-by-side structure manufactured using a photolithography process. Such a structure is referred to as Ph-SbS (side-by-side structure by photolithography). By using a photolithography process, there is no need to use FMM, thus simplifying the process and reducing process costs. In addition, the EAR within subpixels is increased, improving the lifespan. Furthermore, by depositing organic light-emitting elements onto a large-area substrate in an in-line deposition system, productivity, yield, and material utilization efficiency are improved.

[0034] In the following, the red subpixel SPr may be named the first subpixel, the green subpixel SPg may be named the second subpixel, and the blue subpixel SPb may be named the third subpixel. Furthermore, the red organic light-emitting element 120r may be named the first organic light-emitting element, the green organic light-emitting element 120g may be named the second organic light-emitting element, and the blue organic light-emitting element 120b may be named the third organic light-emitting element.

[0035] In the following description, the organic light-emitting display device 100 is an upper-emitting type in which light is emitted upward from the substrate 110 to display an image. However, a lower-emitting type in which light is emitted downward from the substrate 110 to display an image is also included in the technical concept of the present invention.

[0036] In the following, unless otherwise specified, the auxiliary electrode will be designated as AC as shown in Figure 3.

[0037] Figure 1 is a schematic plan view illustrating an organic light-emitting display device according to the first embodiment. Figure 2 is a plan view illustrating one pixel in Figure 1.

[0038] Referring to Figures 1 and 2, the organic light-emitting display device 100 according to the first embodiment may include a plurality of pixels P arranged in a matrix. The plurality of pixels P may be located in the display area AA. The remaining area excluding the display area AA may be a non-display area NAA.

[0039] Each pixel P may include, for example, a red subpixel SPr, a green subpixel SPg, and a blue subpixel SPb. For example, a red organic light-emitting element 120r is located in the red subpixel SPr, a green organic light-emitting element 120g is located in the green subpixel SPg, and a blue organic light-emitting element 120b is located in the blue subpixel SPb. The drawing shows one pixel P containing three subpixels SPr, SPg, and SPb, but it may contain more subpixels.

[0040] In the diagram, the area of ​​the blue subpixel SPb is shown to be larger than the area of ​​the red subpixel SPr and the area of ​​the green subpixel SPg, but other variations are also possible.

[0041] Each subpixel SPr, SPg, and SPb may include an emission region EA and a non-emission region NEA. The emission region EA is the area where the organic light-emitting elements 120r, 120g, and 120b of each subpixel SPr, SPg, and SPb are located, and the non-emission region NEA may be the remaining area of ​​each subpixel SPr, SPg, and SPb excluding the emission region EA.

[0042] On the other hand, a first power line PL1 and a second power line PL2 may be provided to supply power to each subpixel SPr, SPg, and SPb. The first power terminal 101 is electrically connected to one end of the first power line PL1, and the second power terminal 102 is electrically connected to one end of the second power line PL2. The first power terminal 101 and the second power terminal 102 are electrically connected to a power supply unit (not shown) to supply a first potential voltage and a second potential voltage. The second potential voltage is greater than the first potential voltage, and the first potential voltage may be grounded.

[0043] The first power line PL1 and the second power line PL2 may be positioned between the non-emitting regions (NEA) along the first direction X. The first power line PL1 and the second power line PL2 are electrically coupled to each subpixel SPr, SPg, and SPb.

[0044] The contact pad 103 can be located in the non-luminescent region (NEA). The first power line PL1 is electrically connected to the contact pad 103.

[0045] The auxiliary electrode (AC in Figure 3) can be located in the non-luminescent region NEA. The auxiliary electrode AC can be located in the non-luminescent region NEA along the second direction Y, but is not limited to this.

[0046] The auxiliary electrode AC can be located in the non-emitting region NEA adjacent to each subpixel SPr, SPg, and SPb. The auxiliary electrode AC is electrically connected to the first power line PL1 via the contact pad 103.

[0047] The first power line PL1, contact pad 103, and auxiliary electrode AC may be arranged in different layers from each other.

[0048] The auxiliary electrode AC is electrically connected to the cathode electrodes of adjacent organic light-emitting elements 120r, 120g, and 120b of adjacent subpixels SPr, SPg, and SPb. For example, if the auxiliary electrode AC is located between the red subpixel SPr and the green subpixel SPg, the auxiliary electrode AC is electrically connected to the cathode electrode of the red organic light-emitting element 120r and the cathode electrode of the green organic light-emitting element 120g.

[0049] Therefore, the auxiliary electrode AC can supply the first potential voltage from the first power line PL1 to the cathode electrodes of each organic light-emitting element 120r, 120g, and 120b.

[0050] On the other hand, the second power line PL2 is electrically connected to, but is not limited to, the drive circuits 106 for each subpixel SPr, SPg, and SPb, such as drive transistors. Therefore, when a specific subpixel is selected in response to a scan signal provided via a specific gate line, the first potential voltage of the first power line PL1 and the second potential voltage of the second power line PL2 emit light having a brightness corresponding to the current flowing through the drive transistor of the specific subpixel.

[0051] Multiple organic light-emitting elements 120r, 120g, and 120b may be arranged in a stripe pattern along the second direction Y. That is, the multiple organic light-emitting elements 120r, 120g, and 120b may be arranged continuously along the second direction Y without being separated. For example, the red organic light-emitting elements 120r may be arranged continuously along the second direction Y, the green organic light-emitting elements 120g may be arranged continuously along the second direction Y, and the blue organic light-emitting elements 120b may be arranged continuously along the second direction Y.

[0052] As another example, the multiple organic light-emitting elements 120r, 120g, and 120b may be separated along the second direction Y into pixel P units or row line units. That is, the red organic light-emitting elements 120r may be separated along the second direction Y into pixel P units or row line units, the green organic light-emitting elements 120g may be separated along the second direction Y into pixel P units or row line units, and the blue organic light-emitting elements 120b may be separated along the second direction Y into pixel P units or row line units.

[0053] The red subpixel SPr, green subpixel SPg, and blue subpixel SPb may be arranged alternately in column-line units along the first direction X. That is, a side-by-side organic light-emitting display device is realized when red subpixel SPr, green subpixel SPg, and blue subpixel SPb, each having a different color, are sequentially positioned along the first direction X.

[0054] On the other hand, the Asymmetric Open-Connect (AOC) structure 105 can be located in the non-luminescent region (NEA). In the embodiment, the Asymmetric Open-Connect structure 105 may include a connecting structure 105A and a blocking structure 105B. The Asymmetric Open-Connect structure 105 can be named as such because the ratio of depth to gap differs in the undercut structures of the connecting structure 105A and the blocking structure 105B. The depth may indicate the horizontal width of the undercut structure, and the gap may indicate the vertical width of the undercut structure.

[0055] As will be described later, lateral leakage current between multiple subpixels SPr, SPg, and SPb is prevented by the asymmetric blocking coupling structure 105. Lateral leakage current can be defined as leakage current flowing along the first direction X between adjacent subpixels SPr, SPg, and SPb. Furthermore, electrical short circuits between the anode electrode and cathode electrode in the subpixels SPr, SPg, and SPb are prevented by the asymmetric blocking coupling structure 105. Therefore, by utilizing the asymmetric blocking coupling structure 105, color unevenness caused by leakage current is improved, and luminous efficiency and brightness are significantly enhanced.

[0056] The coupling structure 105A may be a structure that electrically connects the auxiliary electrode AC to the cathode electrode of each organic light-emitting element 120r, 120g, and 120b. The blocking structure 105B may be a structure that separates the layers containing the low-resistance organic light-emitting material of each organic light-emitting element 120r, 120g, and 120b, such as a hole injection layer and a charge generation layer, to prevent electrical short circuits between the anode electrode and the cathode electrode and reduce leakage current between subpixels. The asymmetric blocking coupling structure 105 is sometimes called a "paradoxical open-connect structure".

[0057] Figure 3 is a circuit diagram illustrating an organic light-emitting device according to an embodiment. Figure 3 is a circuit diagram for the electrical connection from the first power terminal 101 and the second power terminal 102 to the green subpixel SPg in Figure 2. The circuit diagram shown in Figure 2 can also be similarly applied to the circuit diagram for the electrical connection from the first power terminal 101 and the second power terminal 102 to the red subpixel SPr or the blue subpixel SPb.

[0058] As shown in Figure 3, the first power terminal 101 and the second power terminal 102 may be located in the non-display area NAA, and the first power line PL1 and the second power line PL2 may be located in the non-display area NAA and the display area AA.

[0059] The contact pad 103 is positioned in the non-luminescent region NEA and electrically connected to the first power line PL1. The first power line PL1 is electrically connected to the auxiliary electrode AC via the contact pad 103.

[0060] The organic light-emitting element 120g is placed in the light-emitting region EA of the subpixel SPg, and the connecting structure 105A and the blocking structure 105B may be placed in the non-light-emitting region NEA. The connecting structure 105A and the blocking structure 105B constitute the asymmetric blocking connecting structure 105 shown in Figure 2. The auxiliary electrode AC is electrically connected to the cathode electrode 123g of the organic light-emitting element 120g by the connecting structure 105A. The hole injection layer of the organic light-emitting element 120g may be disconnected by the blocking structure 105B, resulting in an electrical break between the anode electrode 121g and the cathode electrode 123g.

[0061] As illustrated in Figure 3, various resistances are formed between each component. Each resistance can be defined as follows:

[0062] R1: Contact resistance between contact pad 103 and auxiliary electrode AC R2: Resistance between auxiliary electrode AC and cathode electrode R4: Resistance between anode electrode 121g and cathode electrode 123g due to horizontally arranged hole injection layers, etc. R5: Resistance between the anode electrode 121g and the cathode electrode 123g due to multiple vertically arranged organic light-emitting layers. R6: Resistance between the first power line PL1 and contact pad 103 R7: Resistance between the first power line PL1 and auxiliary electrode AC

[0063] As mentioned above, the hole injection layer forming the fourth resistor R4 is made of a low-resistance organic light-emitting material, so leakage current easily flows through the hole injection layer. When leakage current flows through the hole injection layer, an electrical short circuit between the anode electrode 121g and the cathode electrode 123g may cause no light to be emitted from the subpixels SPr, SPg, and SPb, or the brightness of the light may be significantly lower than the desired brightness.

[0064] In this embodiment, the hole injection layer corresponding to the blocking structure 105B is interrupted by the blocking structure 105B, thereby blocking the leakage current flowing through the hole injection layer and the like.

[0065] In this embodiment, the cathode electrode 123g is easily connected to the auxiliary electrode AC by the connecting structure 105A, maximizing the deposition area of ​​the organic light-emitting element 120g and improving the luminous efficiency.

[0066] Figure 4A is a cross-sectional view of the pixel in Figure 2, cut along the line A-A'. Figure 4B is a cross-sectional view of the pixel in Figure 2, cut along the line B-B'. Figure 4C is a cross-sectional view of the pixel in Figure 2, cut along the line C-C'.

[0067] Referring to Figures 1, 2, and 4A to 4C, the organic light-emitting display device according to the embodiment may include a plurality of banks 111-1, 111-2, a plurality of protrusions 130-1, 130-2, a plurality of organic light-emitting elements 120r, 120g, 120b, and so on.

[0068] Multiple banks 111-1, 111-2, multiple protrusions 130-1, 130-2, and multiple organic light-emitting elements 120r, 120g, 120b are arranged on the substrate 110. Multiple banks 111-1, 111-2, multiple protrusions 130-1, 130-2, and / or multiple organic light-emitting elements 120r, 120g, 120b are each arranged on the substrate 110 in a stripe pattern along the second direction Y. In such a case, subpixels of the same color are arranged along the second direction Y. For example, multiple red subpixels SPr may be arranged in a stripe pattern along the second direction Y. Banks 111-1, 111-2 may include inorganic or organic materials. For example, banks 111-1, 111-2 may include inorganic materials such as SiNx, SiON, etc.

[0069] On the other hand, as shown in Figure 4C, the lateral banks 111-3 may be arranged in row-line units along the second direction Y. Conversely, the protrusions do not have to be arranged in row-line units along the second direction Y. That is, the protrusions do not have to be arranged on the lateral banks 111-3 along the second direction Y.

[0070] To distinguish them from the horizontal bank 111-3, the first bank 111-1 and the second bank 111-2 can be called vertical banks.

[0071] Multiple subpixels SPr, SPg, and SPb may be separated from each other by multiple banks 111-1 and 111-2. The first bank 111-1 is located between the red subpixel SPr and the green subpixel SPg, and the second bank 111-2 is located between the green subpixel SPg and the blue subpixel SPb. Although not shown, a third bank is located between the blue subpixel SPb and yet another red subpixel SPr.

[0072] Multiple organic light-emitting elements 120r, 120g, and 120b may be spatially separated and electrically disconnected from each other by multiple banks 111-1 and 111-2. This blocks lateral leakage current between multiple subpixels SPr, SPg, and SPb, improving color uniformity and enhancing luminous efficiency and brightness.

[0073] The red organic light-emitting element 120r is placed in the red subpixel SPr, the green organic light-emitting element 120g is placed in the green subpixel SPg, and the blue organic light-emitting element 120b is placed in the blue subpixel SPb.

[0074] Multiple banks 111-1 and 111-2 can have a grid-like structure. For example, banks 111-1 and 111-2 are arranged along the periphery of subpixels SPr, SPg, and SPb. That is, multiple banks 111-1 and 111-2 are arranged between adjacent subpixels SPr, SPg, and SPb along the first direction X, and between adjacent subpixels SPr, SPg, and SPb along the second direction Y. In such a case, adjacent subpixels SPr, SPg, and SPb along the first direction X may have different colors from each other, while adjacent subpixels SPr, SPg, and SPb along the second direction Y may have the same color from each other.

[0075] Multiple organic light-emitting elements 120r, 120g, and 120b may be separated from each other by multiple banks 111-1 and 111-2. The multiple banks 111-1 and 111-2 are arranged to separate each of the multiple organic light-emitting elements 120r, 120g, and 120b. The red organic light-emitting element 120r and the green organic light-emitting element 120g may be separated by the first bank 111-1, and the green organic light-emitting element 120g and the blue organic light-emitting element 120b may be separated by the second bank 111-2.

[0076] On the other hand, the organic light-emitting display device according to the embodiment may include a blocking structure 105B in the edge region of each of the multiple banks 111-1 and 111-2. For example, the blocking structure 105B may be placed in the lower edge region of each of the multiple banks 111-1 and 111-2, but is not limited to this.

[0077] The blocking structure 105B may be positioned in the edge region of banks 111-1 and 111-2 between subpixels SPr, SPg, and SPb along the first direction X. The blocking structure 105B may also be positioned in the edge region of banks 111-1 and 111-2 between subpixels SPr, SPg, and SPb along the second direction Y.

[0078] When organic light-emitting elements 120r, 120g, and 120b are deposited on banks 111-1 and 111-2, the blocking structure 105B isolates a portion of the organic light-emitting elements 120r, 120g, and 120b. For example, the blocking structure 105B can isolate the low-resistance layer of each organic light-emitting element 120r, 120g, and 120b. The low-resistance layer can include, for example, a hole injection layer or a charge generation layer. The low-resistance layer can mean a layer having a resistance value smaller than the resistance value of a high-resistance layer, such as an organic light-emitting layer, electron transport layer, or electron injection layer.

[0079] For example, the organic light-emitting layers 122r, 122g, and 122b of each organic light-emitting element 120r, 120g, and 120b can have separation structures 125-1 to 125-3 corresponding to the blocking structure 105B. Separation structures 125-1 to 125-3 can mean a shape in which a part of the organic light-emitting layers 122r, 122g, and 122b is interrupted. Therefore, in separation structures 125-1 to 125-3, for example, a hole injection layer, a charge generation layer, etc., are interrupted.

[0080] The barrier structure 105B may include at least one barrier layer 113 that extends inward from the sides of banks 111-1 and 111-2. The barrier layer 113 forms an undercut structure in the edge region of banks 111-1 and 111-2. The barrier layer 113 may include silicon-based inorganic materials, metals, etc. As metals, aluminum (Al), molybdenum (Mo), molybdenum alloys, etc., can be used, but are not limited to these.

[0081] When organic light-emitting elements 120r, 120g, and 120b are deposited on banks 111-1 and 111-2, which have undercut structures formed in this manner, some layers of the organic light-emitting layers 122r, 122g, and 122b of the organic light-emitting elements 122r, 122g, and 122b, which correspond to the undercut structure, namely the hole injection layer and the charge generation layer, are interrupted.

[0082] On the other hand, as mentioned above, organic light-emitting elements 120r, 120g, and 120b corresponding to each subpixel SPr, SPg, and SPb are arranged.

[0083] The red organic light-emitting element 120r may include an anode electrode 121r, a red organic light-emitting layer 122r, a cathode electrode 123r, etc. The red organic light-emitting layer 122r is placed on the anode electrode 121r, and the cathode electrode 123r is placed on the red organic light-emitting layer 122r. The green organic light-emitting element 120g may include an anode electrode 121g, a green organic light-emitting layer 122g, a cathode electrode 123g, etc. The green organic light-emitting layer 122g is placed on the anode electrode 121g, and the cathode electrode 123g is placed on the green organic light-emitting layer 122g. The blue organic light-emitting element 120b may include an anode electrode 121b, a blue organic light-emitting layer 122b, a cathode electrode 123b, etc. The blue organic light-emitting layer 122b is placed on the anode electrode 121b, and the cathode electrode 123b is placed on the blue organic light-emitting layer 122b.

[0084] The anode electrodes 121r, 121g, and 121b may include multiple conductive layers. The anode electrodes 121r, 121g, and 121b may have a triple structure consisting of ITO / Ag alloy / ITO. The anode electrodes 121r, 121g, and 121b may have a triple structure consisting of ITO / Ag alloy / (Ti, Mo, or MoTi).

[0085] One end of anode electrodes 121r, 121g, and 121b is positioned below banks 111-1 and 111-2. That is, one end of banks 111-1 and 111-2 is positioned above one end of anode electrodes 121r, 121g, and 121b. One end of anode electrodes 121r, 121g, and 121b can overlap perpendicularly with banks 111-1 and 111-2.

[0086] The red organic light-emitting layer 122r, the green organic light-emitting layer 122g, and the blue organic light-emitting layer 122b may include at least a hole injection layer containing a low-resistance organic light-emitting material.

[0087] On the other hand, one end of the hole injection layer and / or charge generation layer can be in contact with the cathode electrodes 123r, 123g, and 123b. Also, the lower surface of the hole injection layer can be in contact with the anode electrodes 121r, 121g, and 121b. In such a case, because the resistance of the hole injection layer is small, a leakage current may flow between the anode electrodes 121r, 121g, and 121b and the cathode electrodes 123r, 123g, and 123b, potentially causing an electrical short circuit between the anode electrodes 121r, 121g, and 121b and the cathode electrodes 123r, 123g, and 123b.

[0088] However, according to the embodiment, the hole injection layer and / or charge generation layer are disconnected by the blocking structure 105B located in the edge region of banks 111-1 and 111-2, thereby electrically disconnecting the anode electrodes 121r, 121g, and 121b and the cathode electrodes 123r, 123g, and 123b, and thus preventing an electrical short circuit.

[0089] On the other hand, the organic light-emitting display device according to the embodiment may include a plurality of protrusions 130-1, 130-2.

[0090] Multiple organic light-emitting elements 120r, 120g, and 120b may be spatially separated and electrically disconnected from each other by multiple protrusions 130-1 and 130-2. This blocks lateral leakage current between multiple subpixels SPr, SPg, and SPb, improving color uniformity and enhancing luminous efficiency and brightness.

[0091] Multiple protrusions 130-1 and 130-2 are positioned above multiple banks 111-1 and 111-2. The first protrusion 130-1 is positioned above the first bank 111-1 between the red subpixel SPr and the green subpixel SPg. The second protrusion 130-2 is positioned above the second bank 111-2 between the green subpixel SPg and the blue subpixel SPb.

[0092] The left and right sides of the protrusions 130-1 and 130-2 may have shapes that are symmetrical with respect to the center normal of the protrusions 130-1 and 130-2, but are not limited to this. For example, the left and right sides of the protrusions 130-1 and 130-2 may each have an undercut structure. In such a case, the undercut structure on the left side and the undercut structure on the right side may have shapes that are symmetrical with respect to the center normal of the protrusions 130-1 and 130-2.

[0093] The protrusions 130-1 and 130-2 may have a connecting structure 105A that includes an auxiliary electrode AC electrically connected to the cathode electrodes 123r, 123g, and 123b.

[0094] The protrusions 130-1 and 130-2 may include a first layer 131 and a second layer 132 on top of the first layer 131.

[0095] The sides of the first layer 131 can penetrate into the inside of the protrusion from the sides of the second layer 132. Thus, the first layer 131 and the second layer 132 form an undercut structure on the sides of the protrusion. The undercut structure can have a cave-like shape. For example, the undercut structure can have a U-shaped cave shape. Thus, the undercut structure can be called a cave, a U-shaped cave, a cavern, etc. In order to form the undercut structure, the first layer 131 and the second layer 132 can have different etching selectivity ratios. For example, the first layer 131 may contain a material with a fast etching rate, and the second layer 132 may contain a material with a slow etching rate. Thus, when the first layer 131 and the second layer 132 are etched after a photosensitive pattern has been formed on the second layer 132, the sides of the first layer 131 are etched faster than the sides of the second layer 132, thereby forming an undercut structure on the sides of the protrusions 130-1 and 130-2.

[0096] The first layer 131 and / or the second layer 132 may include metals or conductive oxide materials with excellent electrical conductivity. Examples of metals include titanium (Ti), molybdenum (Mo), molybdenum-titanium (MoTi), aluminum (Al), copper (Cu), and alloys thereof. Examples of conductive oxide materials include ITO and IZO.

[0097] On the other hand, by adjusting the target-source distance of the evaporation source (or evaporation source device), the deposition material is deposited on the substrate 110 at different deposition angles. The target-source distance may also be the distance between the evaporation source and the substrate 110. The deposition angle may also be the angle of a virtual line between the evaporation source and the lower edge 132a of the second layer 132 with respect to the normal direction. For example, the larger the target-source distance, the smaller the deposition angle. The smaller the deposition angle, the closer the layer formed by the deposition material is deposited to adjacent subpixels. The larger the deposition angle, the closer the layer is deposited to the protrusions 130-1 and 130-2.

[0098] As shown in Figures 4A, 4B, and 4C, by depositing the deposition materials at different deposition angles, one end of the organic light-emitting layers 122r, 122g, and 122b and one end of the first conductive layer 123-1 of the cathode electrodes 123r, 123g, and 123b can be positioned differently from each other.

[0099] The cathode electrodes 123r, 123g, and 123b may include multiple conductive layers 123-1 and 123-2. For example, the cathode electrodes 123r, 123g, and 123b may include a first conductive layer 123-1 and a second conductive layer 123-2 on the first conductive layer 123-1, but may also include three or more conductive layers.

[0100] One end of the organic light-emitting layers 122r, 122g, and 122b and one end of the first conductive layer 123-1 can be located above banks 111-1 and 111-2. For example, one end of the organic light-emitting layers 122r, 122g, and 122b can be located closer to the first layer 131 than one end of the first conductive layer 123-1.

[0101] The second conductive layer 123-2 may be placed over the entire area of ​​the substrate 110. The second conductive layer 123-2 can be deposited using a sputtering process. That is, the second conductive layer 123-2 is placed above the first conductive layer 123-1 of each subpixel SPr, SPg, SPb, above banks 111-1, 111-2, and on the sides and above protrusions 130-1, 130-2. The second conductive layer 123-2 can be in contact with the sides of the first layer 131 and / or the underside of the second layer 132.

[0102] For example, the first conductive layer 123-1 may contain a metal with excellent electrical conductivity, and the second conductive layer 123-2 may contain a conductive oxide material. For example, the first conductive layer 123-1 may contain an Mg:Ag alloy, and the second conductive layer 123-2 may contain ITO, IZO, etc.

[0103] The Mg:Ag alloy is deposited by evaporation using an evaporation source to form the first conductive layer 123-1. However, because the step coverage characteristics of Mg:Ag are not good, the deposited material containing the Mg:Ag alloy is not easily deposited deep inside the undercut structure of the connecting structure 105A. Furthermore, if the thickness uniformity of the first conductive layer 123-1 containing the Mg:Ag alloy is insufficient or the process margin is insufficient, the first conductive layer 123-1 may not be electrically connected to the auxiliary electrode AC included in the connecting structure 105A, potentially resulting in an electrical connection failure.

[0104] To solve these problems, a conductive oxide material such as ITO, which has excellent step coverage characteristics, is deposited onto the substrate 110 using a sputtering process, allowing it to be deposited deep into the undercut structure of the connecting structure 105A. As a result, the second conductive layer 123-2 is stably deposited on the side of the first layer 131, which is the auxiliary electrode AC, preventing electrical connection failures between the cathode electrodes 123r, 123g, and 123b, which include the first conductive layer 123-1 and the second conductive layer 123-2, and the auxiliary electrode AC. In addition, uniformity of the film thickness of the first conductive layer is ensured, improving the stability of production quality.

[0105] When the second conductive layer 123-2 is formed on the first conductive layer 123-1, there is no need to adjust or control the deposition angle in order to deposit the first conductive layer 123-1 using an evaporation source. Furthermore, even if the first conductive layer 123-1 is deposited freely without being restricted by the deposition angle, not only are the organic light-emitting layers 122r, 122g, and 122b deposited on the subpixels SPr, SPg, and SPb, and the cathode electrodes 123r, 123g, and 123b are stably connected to the auxiliary electrodes AC of the protrusions 130-1 and 130-2 by the second conductive layer 123-2. Therefore, when configured with the combination of the aforementioned connecting structure 105A and the blocking structure 105B, productivity and material utilization efficiency are improved by a more flexible deposition process.

[0106] Furthermore, when an organic light-emitting device is implemented using a top-emitting method, the light-emitting efficiency can be improved by utilizing reinforcing interference between the anode electrodes 121r, 121g, 121b and the cathode electrodes 123r, 123g, 123b, by using cathode electrodes 123r, 123g, 123b containing a first conductive layer 123-1 containing an Ag:Mg alloy and anode electrodes 121r, 121g, 121b containing a semi-transparent material.

[0107] On the other hand, the protrusions 130-1 and 130-2 may include a fourth layer 134 on the second layer 132. The fourth layer 134 may be omitted. The fourth layer 134 may include an inorganic material such as SiO2, SiNx, or SiONx. The fourth layer 134 may include a conductive oxide material such as ITO. The fourth layer 134 can act as a stopper for the second layer 132. As mentioned above, in order to form a side-by-side structure, the red subpixel SPr, green subpixel SPg, and blue subpixel SPb are each etched twice. When such two etchings are performed, the area and thickness of the second layer 132 may be changed. In such a case, the deposition angle determined by the lower edge 132a of the second layer 132 changes, which changes the deposition area in each subpixel SPr, SPg, and SPb, ultimately resulting in a problem of reduced image quality.

[0108] To solve the aforementioned problem, if a fourth layer 134 is formed on the second layer 132, acting as a stopper, etching of the second layer 132 is suppressed or prevented by the fourth layer 134 even if etching is performed twice, thus fixing the deposition angle determined by the lower edge 132a of the second layer 132. As a result, the deposition area in each subpixel SPr, SPg, and SPb is secured according to the target area, improving image quality.

[0109] Although not shown in the diagram, a third layer may be placed beneath the first layer 131, but is not limited to this. The third layer may include a material with a slow etching rate. The third layer may include a metal or conductive oxide material with excellent electrical conductivity. The third layer may include an inorganic material with a slow etching rate.

[0110] If the third layer contains a metal or a conductive oxide material, the third layer can serve as an auxiliary electrode AC.

[0111] The etching rate of the third layer may be the same as or slower than that of the second layer 132. When the second layer 132 and the third layer are etched simultaneously, the etching rate of the third layer is the same as or slower than that of the second layer 132, so the sides of the third layer are located on the same vertical line as the sides of the second layer 132, or are further extended from the sides of the second layer 132 in the direction of adjacent subpixels.

[0112] On the other hand, the organic light-emitting device according to the embodiment may include a sealing layer 135. The sealing layer 135 may be a barrier layer that prevents moisture and other substances from penetrating the organic light-emitting elements 120r, 120g, and 120b.

[0113] On the other hand, the organic light-emitting display device according to the embodiment may include a plurality of color filter layers 140r, 140g, 140b and a plurality of sealing layers 141r, 141g, 141b.

[0114] Multiple color filter layers 140r, 140g, and 140b may contain resin materials. Multiple sealing layers 141r, 141g, and 141b may contain multiple layers. Some of the multiple layers may contain inorganic materials, while the other layers may contain organic materials.

[0115] The red color filter layer 140r is placed on the red subpixel SPr. The red color filter layer 140r is placed on the red organic light-emitting element 120r in the red subpixel SPr, and can emit only the red light corresponding to the target red wavelength band pre-set in the red color filter layer 140r from the wavelength band of red light emitted from the red organic light-emitting element 120r.

[0116] The green color filter layer 140g is placed on the green subpixel SPg. The green color filter layer 140g is placed on the green organic light-emitting element 120g in the green subpixel SPg, and can emit only the green light corresponding to the target green wavelength band pre-set in the green color filter layer 140g from the wavelength band of green light emitted from the green organic light-emitting element 120g.

[0117] The blue color filter layer 140b is placed on the blue subpixel SPb. The blue color filter layer 140b is placed on the blue organic light-emitting element 120b in the blue subpixel SPb, and can emit only the blue light corresponding to the target blue wavelength band pre-set in the blue color filter layer from the wavelength band of blue light emitted from the blue organic light-emitting element 120b.

[0118] Each of the multiple color filter layers 140r, 140g, and 140b can function as a color filter that emits only color light within a preset wavelength band.

[0119] As described above, the multiple color filter layers 140r, 140g, and 140b further improve the color purity of each color compared to when there are no color filter layers, and can play a role in improving the change in color purity according to the viewing angle, especially in organic light-emitting devices having an upper light-emitting structure. Currently, polarizing plates are attached to remove light that is reflected by the reflective material of the anode electrodes 121r, 121g, and 121b when external light is incident, but the most important role of the multiple color filter layers 140r, 140g, and 140b is that they absorb external light to improve the contrast ratio, and furthermore, they can eliminate the polarizing plates and contribute to cost reduction.

[0120] On the other hand, the multiple color filter layers 140r, 140g, and 140b can each function as a photosensitive pattern for patterning the sealing layer 135, the cathode electrodes 123r, 123g, and 123b, and the organic light-emitting layers 122r, 122g, and 122b, respectively.

[0121] As shown in Figure 4A, the sealing layer 135, cathode electrode 123r, and red organic light-emitting layer 122r are etched using the red color filter layer 140r, and formed only on the red subpixel SPr. In this case, one end of the sealing layer 135, one end of the cathode electrode 123r, and one end of the red organic light-emitting layer 122r can be located on the same vertical or diagonal line on the first protrusion 130-1.

[0122] As shown in Figure 4B, the sealing layer 135, cathode electrode 123g, and green organic light-emitting layer 122g are etched using the green color filter layer 140g, and formed only on the green subpixel SPg. In this case, one end of the sealing layer 135, one end of the cathode electrode 123g, and one end of the green organic light-emitting layer 122g can be located on the same vertical or diagonal line on the first protrusion 130-1.

[0123] As shown in Figure 4C, the sealing layer 135, cathode electrode 123b, and blue organic light-emitting layer 122b are etched using the blue color filter layer 140b, and formed only on the blue subpixel SPb. In this case, one end of the sealing layer 135, one end of the cathode electrode 123b, and one end of the blue organic light-emitting layer 122b can be located on the same vertical or diagonal line on the first protrusion 130-1.

[0124] For example, the blue organic light-emitting element 120b, the green organic light-emitting element 120g, and the red organic light-emitting element 120r may be formed in that order, but the invention is not limited to this arrangement.

[0125] On the other hand, the sealing layers 141r, 141g, and 141b may include multiple layers containing organic and inorganic materials.

[0126] The encapsulation layers 141r, 141g, and 141b can protect the multiple color filter layers 140r, 140g, and 140b, which are made of resin material, from etching. For example, by forming a blue encapsulation layer 141b on a blue color filter layer 140b used for patterning a blue organic light-emitting element 120b, the blue encapsulation layer 141b can prevent etching of the blue color filter layer 140b while the green organic light-emitting element 120g is being etched. Similarly, by forming a green encapsulation layer 141g on a green color filter layer 140g used for patterning a green organic light-emitting element 120g, the green encapsulation layer 141g can prevent etching of the green color filter layer 140g while the red organic light-emitting element 120r is being etched. Therefore, the red encapsulation layer 141r, the green encapsulation layer 141g, and the blue encapsulation layer 141b can act as stoppers to prevent etching.

[0127] On the other hand, the multiple color filter layers 140r, 140g, and 140b can each contain a light scattering agent or a light diffusing agent. The scattering or diffusion of light by the light scattering or diffusing agent improves the luminescence efficiency.

[0128] On the other hand, the red sealing layer 141r, the green sealing layer 141g, and the blue sealing layer 141b may each contain multiple layers, one containing an inorganic material and the other an organic material.

[0129] The red sealing layer 141r is placed on the red color filter layer 140r, the green sealing layer 141g is placed on the green color filter layer 140g, and the blue sealing layer 141b is placed on the blue color filter layer 140b.

[0130] The red sealing layer 141r, the green sealing layer 141g, and the blue sealing layer 141b may each contain at least one layer. For example, the red sealing layer 141r, the green sealing layer 141g, and the blue sealing layer 141b may each contain, but are not limited to, a first inorganic layer, an organic layer on the first inorganic layer, a second inorganic layer on the organic layer, etc. The first and second inorganic layers may contain inorganic materials such as SiNx, and the organic layer may contain resin materials, but are not limited to these.

[0131] According to the embodiment, in order to manufacture an organic light-emitting device having a side-by-side structure, a plurality of subpixels SPr, SPg, and SPb are formed sequentially. For example, a blue organic light-emitting element 120b, a blue color filter layer 140b, and a blue encapsulation layer 141b are formed and patterned on the entire surface of the substrate 110 using a photolithography process to form a blue subpixel SPb. Subsequently, a green organic light-emitting element 120g, a green color filter layer 140g, and a green encapsulation layer 141g are formed and patterned on the entire surface of the substrate 110 using a photolithography process to form a green subpixel SPg. Subsequently, a red organic light-emitting element 120r, a red color filter layer 140r, and a red encapsulation layer 141r are formed and patterned using a photolithography process to form a red subpixel SPr.

[0132] Figure 5 is a cross-sectional view illustrating an organic light-emitting device according to the first embodiment. Although Figures 4A to 4C illustrate the green organic light-emitting element 120g, the red organic light-emitting element 120r and the blue organic light-emitting element 120b can also have the same structure and shape as the green organic light-emitting element 120g shown in Figure 5. Since Figure 5 is an enlarged view of the asymmetrical blocking coupling structure 105 shown in Figure 4A, explanations that overlap with the explanations related to Figure 4A may be omitted.

[0133] Referring to Figures 4A, 4B, and 5, the organic light-emitting device according to the first embodiment may include a substrate 110, a first bank 111-1, a first protrusion 130-1, a green organic light-emitting element 120g, a first sealing layer 135, a green color filter layer 140g, a green sealing layer 141g, and the like. The green sealing layer 141g may be named the second sealing layer.

[0134] The substrate 110 may include materials with excellent insulating properties. For example, the substrate 110 may include plastic materials, resin materials, glass, etc. The substrate 110 may include rigid materials or flexible materials.

[0135] The first bank 111-1 is positioned on the substrate 110 between the red subpixel SPr and the green subpixel SPg. The first protrusion 130-1 is positioned above the first bank 111-1.

[0136] The first protrusion 130-1 may include a connecting structure 105A. The connecting structure 105A may be formed on the left and right sides of the first protrusion 130-1, respectively. In such a case, the undercut structure on the left side and the undercut structure 151 on the right side may be included in the connecting structure 105A. For example, the undercut structure on the left side may be included in the first connecting structure, and the undercut structure 151 on the right side may be included in the second connecting structure 105A.

[0137] The first projection 130-1 may include a first layer 131, a second layer 132, a fourth layer 134, and so on. The second layer 132 is located on the first layer 131, and the fourth layer 134 is included on the second layer 132. Although not shown, a third layer may be located below the first layer 131.

[0138] The coupling structure 105A may include an auxiliary electrode AC. The auxiliary electrode AC is electrically coupled to the first power line PL1 via a contact pad 103, as shown in Figures 1 and 2.

[0139] The auxiliary electrode AC included in the connecting structure 105A is electrically connected to the adjacent subpixels SPr and SPg. For example, the auxiliary electrode AC is electrically connected to the cathode electrode 123r of the red organic light-emitting element 120r and the cathode electrode 123g of the green organic light-emitting element 120g. That is, the cathode electrode 123r of the red organic light-emitting element 120r is electrically connected to one side of the auxiliary electrode and is electrically connected to the cathode electrode 123g of the green organic light-emitting element 120g.

[0140] At least one of the first layer 131 or the second layer 132 may contain a metal or conductive oxide material with excellent electrical conductivity. In such a case, at least one of the first layer 131 or the second layer 132 can serve as an auxiliary electrode AC. Thus, at least one of the first layer 131 or the second layer 132 is electrically connected to the cathode electrode 123r of the red organic light-emitting element 120r and the cathode electrode 123g of the green organic light-emitting element 120g.

[0141] The connecting structure 105A may have an undercut structure 151 formed by the first layer 131 and the second layer 132. For this purpose, the first layer 131 may be made of a material with a high etching rate, and the second layer 132 may be made of a material with a low etching rate. Therefore, when the first layer 131 and the second layer 132 are etched, the sides of the first layer 131 are etched faster than the sides of the second layer 132, thereby forming the undercut structure 151. On the other hand, the etching rate of the third layer may be lower than that of the first layer 131. The etching rate of the third layer may be the same as or lower than that of the second layer 132. Therefore, when the first layer 131 and the third layer are etched, the sidewalls of the third layer are either identical to or etched later than the sidewalls of the first layer 131, and the sidewalls of the third layer are either aligned perpendicularly or diagonally with the sidewalls of the first layer 131, or extend further from the sidewalls of the first layer 131 in the direction of the green subpixel SPg.

[0142] The green organic light-emitting diode 120g may contain an anode electrode 121g, a green organic light-emitting layer 122g, and a cathode electrode 123g.

[0143] As shown in Figure 5, the cathode electrode 123g may include a first conductive layer 123-1 and a second conductive layer 123-2 on the first conductive layer 123-1. For example, the first conductive layer 123-1 may contain a metal with excellent electrical conductivity, and the second conductive layer 123-2 may contain a conductive oxide material. For example, the first conductive layer 123-1 may contain an Mg:Ag alloy, and the second conductive layer 123-2 may contain ITO, IZO, etc.

[0144] In the deposition process, the high-resistance deposition materials HTL, EML, and ETL are deposited at a deposition angle θo2 in the green organic light-emitting layer 122g, while the first conductive layer 123-1 of the cathode electrode 123g is deposited at a deposition angle θc. The deposition angles θo2 and θc may be similar. The low-resistance deposition materials HIL and CGL are deposited at a deposition angle θo1. The deposition angle θo1 may be 10° or more greater than the deposition angles θo2 and θc.

[0145] When a conductive oxide material such as ITO, which has excellent step coverage characteristics, is deposited onto the substrate 110 using a sputtering process, the conductive oxide material is deposited deep inside the undercut structure 151 of the connecting structure 105A. Furthermore, the film quality of the layer formed by the conductive oxide material, i.e., the second conductive layer 123-2, is excellent. Therefore, not only is the second conductive layer 123-2 formed with excellent film quality, but it is also formed deep inside the undercut structure 151 of the connecting structure 105A, preventing electrical coupling failures between the cathode electrode 123g and the auxiliary electrode AC, including the first conductive layer 123-1 and the second conductive layer 123-2.

[0146] In conclusion, by depositing a deposition material including ITO, which has excellent step coverage characteristics, onto the substrate 110 using a sputtering process, the deposition material is deposited not only over the entire area of ​​the substrate 110 but also deep inside the undercut structure 151 of the connecting structure 105A. As a result, the second conductive layer 123-2 is electrically connected to the auxiliary electrode AC, i.e., the first layer 131 and / or the second layer 132, preventing electrical connection failure between the first conductive layer 123-1 and the auxiliary electrode AC.

[0147] The second conductive layer 123-2 is positioned on the cathode electrode 123g of the green organic light-emitting element 102g. The second conductive layer 123-2 is positioned on the side of one end of the green organic light-emitting layer 122g. The second conductive layer 123-2 is positioned on the upper side of banks 111-1 and 111-2 between the first protrusion 130-1 and the green organic light-emitting layer 122g. The second conductive layer 123-2 is positioned on the side of the first layer 131. The second conductive layer 123-2 is positioned on the lower, side and / or upper side of the second layer 132.

[0148] On the other hand, not only the first conductive layer 123-1, but also the high-resistance organic deposition materials for the green organic light-emitting element 120g, such as the hole transport layer HTL, the green organic light-emitting layer EML, and the electron transport layer ETL, are deposited at a deposition angle θo2. In the example, the first conductive layer 123-1 is deposited together with the hole transport layer HTL, the green organic light-emitting layer EML, and the electron transport layer ETL at the same deposition angle θo2.

[0149] The low-resistance organic deposition materials for the 120g green organic light-emitting diode, such as the hole injection layer (HIL), charge generation layers (n-CGL, p-CGL), are deposited at a deposition angle θo1 smaller than the deposition angle θo2. This allows the high-resistance organic deposition material to cover the low-resistance organic deposition material, preventing the low-resistance organic deposition material from being exposed.

[0150] Specifically, since the deposition angles θo2 of the high-resistance deposition materials HTL, EML, and ETL are 10° or more greater than the deposition angles θo1 of the low-resistance deposition materials HIL and CGL, the first organic light-emitting stack 122-2 is formed on the upper and side of the hole injection layer 122-1, and the second organic light-emitting stack 122-4 is formed not only on the upper side but also on the side of the charge generation layer 122-3. Furthermore, since the deposition angle θc of the first conductive layer 123-1 is different from the deposition angles θo2 of the high-resistance deposition materials HTL, EML, and ETL, the first conductive layer 123-1 is formed on the upper side of the second organic light-emitting stack 122-4.

[0151] On the other hand, the second conductive layer 123-2 is formed on the side of the first organic light-emitting stack 122-2, and on the upper side and sides of the second organic light-emitting stack 122-4. In this case, the second conductive layer 123-2 and the hole injection layer 122-1 can be separated by an amount corresponding to the thickness of the first organic light-emitting stack 122-2 or the sum of the thickness of the first organic light-emitting stack 122-2 and the second organic light-emitting stack 122-4. Also, the second conductive layer 123-2 and the charge generation layer 122-3 can be separated by an amount corresponding to the thickness of the first organic light-emitting stack 122-2 or the sum of the thickness of the first organic light-emitting stack 122-2 and the second organic light-emitting stack 122-4. As a result, the hole injection layer 122-1 and / or the charge generation layer 122-3 are not electrically connected to the second conductive layer 123-2, thus preventing electrical connection failures.

[0152] Therefore, since the low-resistance deposition materials HIL and CGL and the high-resistance deposition materials HTL, EML, and ETL are deposited at different deposition angles θo1 and θo2, and the hole injection layer 122-1 and the charge generation layer 122-3 are electrically disconnected from the second conductive layer 123-2 of the cathode electrode 123g, there is no need to form a barrier structure (105B in Figures 4A to 4C), thus simplifying the process and reducing process costs.

[0153] Although adding the shielding structure 105B increases process costs, it provides double shielding, completely preventing anode-cathode leakage current due to insufficient process margin in the event of an emergency. In particular, it is preferable to adjust the deposition angle, as well as the shielding structure 105B, in the order of the thinner blue organic light-emitting element 120b and the green-blue organic light-emitting element 120g.

[0154] The sealing layer 135 is placed on the green organic light-emitting element 120g and the first protrusion 130-1. The sealing layer 135 can act as a barrier to prevent moisture and other substances from penetrating the green organic light-emitting element 120g. The sealing layer 135 may include a plurality of insulating layers 135-1, 135-2, but is not limited thereto. For example, the sealing layer 135 may include a first-first insulating layer 135-1 and a first-second insulating layer 135-2 on the first-first insulating layer 135-1. For example, the first-first insulating layer 135-1 may be an inorganic layer containing SiO2, and the first-second insulating layer 135-2 may be an inorganic layer containing SiNx, but is not limited thereto.

[0155] As shown in Figure 5, the first-first insulating layer 135-1 is also placed inside the undercut structure 151 of the connecting structure 105A. That is, the first-first insulating layer 135-1 is placed on the side of the first layer 131, below the second layer 132, etc. The first-second insulating layer 135-2 does not have to be placed inside the undercut structure 151 of the connecting structure 105A, but this is not a limitation.

[0156] A green color filter layer 140g is placed on a green organic light-emitting element 120g, and a green encapsulation layer 141g is placed on a green color filter layer 140g.

[0157] The green sealing layer 141g includes, but is not limited to, the second-first insulating layer 141-1, the second-second insulating layer 141-2, the second-third insulating layer 141-3, etc. The second-first insulating layer 141-1 and the second-third insulating layer 141-3 each contain an inorganic material such as SiNx, and the second-second insulating layer 141-2 may contain, but is not limited to, a resin material.

[0158] Figure 6 is a cross-sectional view illustrating an organic light-emitting device according to the second embodiment. While Figures 4A to 4C illustrate the green organic light-emitting element 120g, the red organic light-emitting element 120r and the blue organic light-emitting element 120b can also have the same structure and shape as the green organic light-emitting element 120g shown in Figure 6. Since Figure 6 is an enlarged view of the asymmetrical blocking coupling structure 105 shown in Figure 4A, explanations that overlap with the explanations related to Figure 4A may be omitted.

[0159] The second embodiment is identical to the first embodiment (Figure 5) except for the blocking structure 105B. In the second embodiment, components having the same shape, structure and / or function as those in the first embodiment (Figure 5) are denoted by the same reference numerals, and detailed descriptions are omitted.

[0160] Referring to Figures 4A, 4B, and 6, the organic light-emitting device according to the second embodiment may include a substrate 110, a first bank 111-1, a first protrusion 130-1, a green organic light-emitting element 120g, a first sealing layer 135, a green color filter layer 140g, a green sealing layer 141g, and the like. The green sealing layer 141g may be named the second sealing layer.

[0161] The organic light-emitting display device according to the second embodiment may include a blocking structure 105B. The blocking structure 105B may be provided in the edge region of the first bank 111-1. The blocking structure 105B may be configured together with the connecting structure 105A as an asymmetric blocking connecting structure 105.

[0162] The barrier structure 105B may include a barrier layer 113. The barrier layer 113 may include an inorganic material or a metal. For example, the barrier layer 113 may include an inorganic material such as SiO2. For example, the barrier layer 113 may include a metal such as aluminum (Al) or molybdenum (Mo).

[0163] The blocking structure 105B may have an undercut structure 152. By etching the side of the blocking layer 113, an undercut structure 152 is formed that extends inward from the side of the first bank 111-1. The undercut structure 151 of the connecting structure 105A may be called the first undercut structure, and the undercut structure 152 of the blocking structure 105B may be called the second undercut structure, or vice versa.

[0164] A separation structure 125-2 is formed in which a portion of the green organic light-emitting element 120g is interrupted by the undercut structure 152 of the blocking structure 105B. The separation structure 125-2 formed on the green organic light-emitting element 120g is formed in correspondence with the blocking structure 105B, specifically the undercut structure 152.

[0165] As an example, a green organic light-emitting element 120g may include a hole injection layer. The cathode electrode 123g is in contact with the edge of the hole injection layer, and the anode electrode 121g is positioned below the hole injection layer. If the hole injection layer contains a low-resistance organic light-emitting material, there is a risk that leakage current will flow between the anode electrode 121g and the cathode electrode 123g through the hole injection layer. Therefore, an electrical short circuit may occur between the anode electrode 121g and the cathode electrode 123g, causing the subpixels SPr, SPg, and SPb to either not emit light or their brightness to be significantly reduced compared to the target brightness, resulting in poor image quality. According to the embodiment, a separation structure 125-2 corresponding to the blocking structure 105B is formed in the hole injection layer. The portion of the hole injection layer corresponding to the separation structure 125-2 is disconnected. By disconnecting the hole injection layer, the electrical short circuit between the anode electrode 121g and the cathode electrode 123g is blocked, preventing poor image quality.

[0166] As another example, the green organic light-emitting element 120g may have a two-stack structure and may include a hole injection layer, a first organic light-emitting stack, a charge generation layer, and a second organic light-emitting stack. In such a case, the cathode electrode 123g may be in contact with one end of the charge generation layer, and one end of the charge generation layer may be in contact with one end of the hole injection layer. Therefore, since the hole injection layer and the charge generation layer are made of a low-resistance organic light-emitting material, an electrical short circuit may occur between the anode electrode 121g and the cathode electrode 123g via the hole injection layer and the charge generation layer, potentially resulting in poor image quality. According to the example, the hole injection layer, the first organic light-emitting stack, and the charge generation layer have a separation structure 125-2 that corresponds to the blocking structure 105B. The portions of the hole injection layer, the first organic light-emitting stack, and the charge generation layer corresponding to the separation structure 125-2 are disconnected. By disconnecting the hole injection layer, the first organic light-emitting stack, and the charge generation layer, the electrical short circuit between the anode electrode 121g and the cathode electrode 123g is blocked, preventing image quality defects.

[0167] Figure 7 is a cross-sectional view illustrating an organic light-emitting device according to the third embodiment. While Figures 4A to 4C illustrate the green organic light-emitting element 120g, the red organic light-emitting element 120r and the blue organic light-emitting element 120b can also have the same structure and shape as the green organic light-emitting element 120g shown in Figure 7. Since Figure 7 is an enlarged view of the asymmetrical blocking coupling structure 105 shown in Figure 4A, explanations that overlap with the explanations related to Figure 4A may be omitted.

[0168] The third embodiment is similar to the second embodiment (Figure 6), except that the green color filter layer (140g in Figure 6) is omitted. In the third embodiment, components having the same shape, structure and / or function as those in the second embodiment (Figure 6) are denoted by the same reference numerals, and detailed descriptions are omitted.

[0169] Referring to Figures 4A, 4B, and 7, the organic light-emitting device according to the second embodiment may include a substrate 110, a first bank 111-1, a first protrusion 130-1, a green organic light-emitting element 120g, a first sealing layer 135, a green sealing layer 141g, and the like. The green sealing layer 141g may be named the second sealing layer.

[0170] Unlike the second embodiment (Figure 6), the green color filter layer (140g in Figure 6) may be omitted in the third embodiment (Figure 7).

[0171] A green encapsulation layer 141g is formed on the green organic light-emitting element 120g. The green encapsulation layer 141g can prevent moisture and other substances from penetrating the green organic light-emitting element 120g. The green encapsulation layer 141g can protect the green organic light-emitting element 120g from external impacts. The green encapsulation layer 141g can ensure that the upper surface of the organic light-emitting device, i.e., the upper surface of the green encapsulation layer 141g, is flat. For this purpose, at least one of the multiple insulating layers 141-2, 141-3 included in the green encapsulation layer 141g may include a thick organic layer.

[0172] In the second embodiment (Figure 6), the green sealing layer 141g includes the 2-1 insulating layer 141-1 to the 2-3 insulating layer 141-3, whereas in the third embodiment (Figure 7), the green sealing layer 141g may include the 2-2 insulating layer 141-2 and the 2-3 insulating layer 141-3. That is, in the third embodiment (Figure 7), the 2-1 insulating layer 141-1 may be omitted.

[0173] For example, by using a resin material that is easy to form thicknesses to increase the thickness of the second-second insulating layer 141-2, the upper surface of the second-second insulating layer 141-2 can be made flat. By forming the second-third insulating layer 141-3 on the second-second insulating layer 141-2, the upper surface of the second-third insulating layer 141-3 can also be made flat.

[0174] Figure 8A is a cross-sectional view illustrating an organic light-emitting device according to the fourth embodiment. Figure 8B is a cross-sectional view illustrating the connection structure in the asymmetrical interruption connection structure of Figure 8A. Figure 8C is a cross-sectional view illustrating the interruption structure in the asymmetrical interruption connection structure of Figure 8A.

[0175] Figures 8A to 8C illustrate the green organic light-emitting element 120g shown in Figures 4A to 4C, but the red organic light-emitting element 120r and the blue organic light-emitting element 120b can also have the same structure and shape as the green organic light-emitting element 120g shown in Figure 8A. Since Figure 8A is an enlarged view of the asymmetrical blocking coupling structure 105 shown in Figure 4A, explanations that overlap with explanations related to Figure 4A may be omitted.

[0176] The fourth embodiment is similar to the second embodiment (Figure 6) and / or the third embodiment (Figure 7), except for the green organic light-emitting element 120g having a two-stack structure and the third layer 133 of the first protrusion 130-1. In the fourth embodiment, components having the same shape, structure and / or function as those in the second embodiment (Figure 6) and / or the third embodiment (Figure 7) are denoted by the same reference numerals, and detailed descriptions are omitted.

[0177] Referring to Figures 4A, 4B, and 8A to 8C, the organic light-emitting device according to the fourth embodiment may include a substrate 110, a first bank 111-1, a first protrusion 130-1, a green organic light-emitting element 120g, and the like.

[0178] The first protrusion 130-1 may have a connecting structure 105A. The connecting structure 105A may include an auxiliary electrode AC that is electrically connected to the cathode electrode 123g of the green organic light-emitting element 120g. As shown in Figures 1 and 2, the auxiliary electrode AC is connected to the first power line PL1 via a contact pad 103. In this case, a predetermined current can flow to the first power line PL1 via the anode electrode 121g, the green organic light-emitting layer 122g, the cathode electrode 123g, and the auxiliary electrode AC of the green organic light-emitting element 120g. In this case, green light having a brightness corresponding to the current is emitted upward, i.e., forward, from the green organic light-emitting layer 122g. In contrast, in the downward light-emitting method, the green light emitted from the green organic light-emitting layer 122g can travel downward, i.e., backward.

[0179] The first projection 130-1 may include a first layer 131, a second layer 132, a third layer 133, and a fourth layer 134. The second layer 132 is located on the first layer 131, the third layer 133 is located below the first layer 131, and the fourth layer 134 is located on the second layer 132. The first layer 131, the second layer 132, and the fourth layer 134 have been described previously, so a detailed explanation will be omitted.

[0180] The third layer 133 can include, for example, a metal or conductive oxide material with excellent electrical conductivity. Therefore, the third layer 133 can serve as an auxiliary electrode AC. The cathode electrode 123g is positioned on the side and top of the third layer 133, and the third layer 133 is electrically connected to the cathode electrode 123g.

[0181] The third layer 133 may contain a material with a low etching rate. For example, the etching rate of the third layer 133 may be lower than that of the first layer 131. For example, the etching rate of the third layer 133 may be the same as or slower than that of the second layer 132. When the second layer 132 and the third layer 133 are etched simultaneously, the etching rate of the third layer 133 is the same as or slower than that of the second layer 132, so the sides of the third layer 133 are located on the same vertical line as the sides of the second layer 132, or are further extended from the sides of the second layer 132 in the direction of adjacent subpixels.

[0182] The undercut structure 151 is formed by the first layer 131, the second layer 132, and the third layer 133. That is, the undercut structure 151 is formed in which the side of the first layer 131 extends inward from the side of the second layer 132 and / or the side of the third layer 133 toward the first projection 130-1. In the undercut structure 151 of the connecting structure 105A, the depth (or width) to which the side of the first layer 131 extends can be defined as the opening depth D. In the undercut structure 151 of the connecting structure 105A, the vertical width between the third layer 133 and the second layer 132 can be defined as the opening gap G.

[0183] On the other hand, as shown in Figure 9, not only the green organic light-emitting element 120g but also the red organic light-emitting element 120r and the blue organic light-emitting element 120b are placed on the substrate 110. The red organic light-emitting element 120r is placed on the red subpixel SPr, the green organic light-emitting element 120g is placed on the green subpixel SPg, and the blue organic light-emitting element 120b is placed on the blue subpixel SPb.

[0184] The red organic light-emitting element 120r, the green organic light-emitting element 120g, and the blue organic light-emitting element 120b can each have a two-stack structure.

[0185] The red organic light-emitting element 120r may include an anode electrode E1, a first organic light-emitting stack ST11 on the anode electrode E1, a charge generation layer 71 on the first organic light-emitting stack ST11, a second organic light-emitting stack ST12 on the charge generation layer 71, a cathode electrode E2 on the second organic light-emitting stack ST12, and a capping layer CPL on the cathode electrode E2.

[0186] The green organic light-emitting diode 120g may include an anode electrode E1, a first organic light-emitting stack ST21 on the anode electrode E1, a charge generation layer 72 on the first organic light-emitting stack ST21, a second organic light-emitting stack ST22 on the charge generation layer 72, a cathode electrode E2 on the second organic light-emitting stack ST22, and a capping layer CPL on the cathode electrode E2.

[0187] The blue organic light-emitting element 120b may include an anode electrode E1, a first organic light-emitting stack ST31 on the anode electrode E1, a charge generation layer 73 on the first organic light-emitting stack ST31, a second organic light-emitting stack ST32 on the charge generation layer 73, a cathode electrode E2 on the second organic light-emitting stack ST32, and a capping layer CPL on the cathode electrode E2.

[0188] The charge generation layers 71-73 may include an n-type charge generation layer n-CGL and a p-type charge generation layer p-CGL on top of the n-type charge generation layer n-CGL.

[0189] In the top-emitting method, reinforcement interference improves the light extraction efficiency in the viewing angle direction. For this purpose, the layer thickness between the anode electrode E1 and the cathode electrode E2 is designed such that the distance between the anode electrode E1 and the cathode electrode E2 in each of the red subpixel SPr, green subpixel SPg, and blue subpixel SPb is m (where m is an integer) times the wavelength of the light. For example, in a side-by-side organic light-emitting device, the thickness can decrease in the order of red organic light-emitting element 120r, green organic light-emitting element 120g, and blue organic light-emitting element 120b. That is, the thickness of the red organic light-emitting element 120r may be the largest, followed by the green organic light-emitting element 120g, and then the blue organic light-emitting element 120b.

[0190] The reference numerals in Figures 8B and 9 correspond to each other as shown in Table 1 and can be used interchangeably. The reference numerals in Figure 9 may refer to the physical layer shown in Figure 8B, or they may refer to the vapor deposition material used to form that physical layer.

[0191] [Table 1]

[0192] Referring again to Figures 8A and 8B, not only the low-resistance organic light-emitting materials HIL and CGL, but also the high-resistance materials HTL, EML, EIL, and ETL are deposited on the substrate 110 at a deposition angle θo to form the first organic light-emitting stack 122-2 including the hole injection layer 122-1, the charge generation layer 122-3, and the second organic light-emitting stack 122-4. The metal deposition material E2 is deposited on the substrate 110 at a deposition angle θc smaller than the deposition angle θo in the horizontal direction to form the cathode electrode 123g. The cathode electrode 123g may be a single layer containing, for example, Mg:Ag. In such a case, the cathode electrode 123g must be electrically connected directly to the auxiliary electrode AC of the first protrusion 130-1. For this purpose, by depositing the metal deposition material E2 on the substrate 110 at a smaller deposition angle θc, the metal deposition material E2 is also formed inside the undercut structure 151 of the connecting structure 105A. For example, the cathode electrode 123g is positioned on the upper side of the third layer 133, which is the auxiliary electrode AC, and is electrically connected to the third layer 133. When the metal deposition material E2 is deposited at a deposition angle θc that is even smaller than the deposition angle θo, the cathode electrode 123g is positioned on the side of the first layer 131, which is the auxiliary electrode AC, and is electrically connected to the first layer 131. For example, by setting the deposition angle θc to be 10° or more smaller than the deposition angle θo, the cathode electrode 123g is formed inside the undercut structure 151 of the connecting structure 105A, and the auxiliary electrode AC of the first protrusion 130-1 is electrically connected to the cathode electrode 123g.

[0193] In Figure 8A, the deposition angles θc and θo may be deposition angles relative to the horizontal direction, but they can also be defined as deposition angles relative to the vertical direction.

[0194] On the other hand, if the first protrusion 130-1 has a square shape when viewed from above, the cathode electrode 123g is electrically connected to the auxiliary electrode AC at at least two of the four corners of the first protrusion 130-1, but this is not limited to this. In this case, the position of the evaporation source for ejecting the metal deposition material and the adjustment and control of the deposition angle θc can be done within the range of a normal production method, so it does not affect the uniformity of the film thickness, the homogeneity of the film quality, productivity, material utilization efficiency, etc.

[0195] As illustrated in Figures 2, 8A, and 8B, the cathode electrode 123g can contact the hole injection layer 122-1 and charge generation layer 122-3, which are made of low-resistance organic light-emitting material, at two or more of the four corners of the green subpixel SPg. For example, one end of the charge generation layer 122-3 can contact one end of the hole injection layer 122-1. The cathode electrode 123g can contact one end of the hole injection layer 122-1 and one end of the charge generation layer 122-3. Therefore, the cathode electrode 123g is electrically connected to the anode electrode 121g via the hole injection layer 122-1, etc. In such a case, the current path between the anode electrode 121g and the cathode electrode 123g is as follows.

[0196] - Anode electrode 121g → Charge generation layer 122-3 → Cathode electrode 123g - Anode electrode 121g → Auxiliary electrode AC → Hole injection layer 122-1 → Cathode electrode 123g - Anode electrode 121g → (Auxiliary electrode AC or hole injection layer 122-1) → Cathode electrode 123g

[0197] Such current paths may cause not only losses due to leakage current but also image quality defects due to an electrical short circuit between the anode electrode 121g and the cathode electrode 123g.

[0198] As shown in Figures 8A to 8C, the cathode electrode 123g is electrically connected to the auxiliary electrode AC by the connecting structure 105A, while the electrical short circuit between the anode electrode 121g and the cathode electrode 123g is interrupted by the blocking structure 105B. This prevents losses due to leakage current and image quality defects, resulting in excellent quality stability.

[0199] The organic light-emitting display device according to the fourth embodiment may include a blocking structure 105B.

[0200] The hole injection layer 122-1 and the charge generation layer 122-3 are disconnected in accordance with the blocking structure 105B, thereby blocking the electrical short circuit between the anode electrode 121g and the cathode electrode 123g.

[0201] As shown in Figure 8C, the cathode electrode 123g located on the uppermost layer of the green organic light-emitting element 120g must be electrically connected to the auxiliary electrode AC and therefore must not be disconnected by the shielding structure 105B.

[0202] The blocking structure 105B may have an undercut structure 152 formed by at least one blocking layer 113. The undercut structure 152 of the blocking structure 105B may have a blocking gap OG and a blocking depth OD. The blocking gap OG may correspond to the thickness of the blocking layer 113. The blocking gap OG may be, for example, the distance between the anode electrode 121g and the first bank 111-1, but is not limited thereto. The blocking depth OD may be the depth to which the side of the blocking layer 113 extends from the side of the first bank 111-1 into the inside of the first bank 111-1.

[0203] As shown in Figure 9, in the red organic light-emitting element 120r, where the distance between the anode electrode E1 and the cathode electrode E2 is greatest, the hole injection layer HIL, the first organic light-emitting stack ST11, and the charge generation layer 71 are disconnected by the blocking structure 105B. In the blue organic light-emitting element 120b, where the distance between the anode electrode E1 and the cathode electrode E2 is smallest, the hole injection layer HIL, the first organic light-emitting stack ST31, the charge generation layer 73, and the second organic light-emitting stack ST32 are disconnected by the blocking structure 105B, but the cathode electrode E2 must not be disconnected by the blocking structure 105B. Therefore, the margin GM of the blocking gap OG in the red organic light-emitting element 120r, the green organic light-emitting element 120g, and the blue organic light-emitting element 120b can be expressed by Equation 1. [Formula 1] GM = Distance D11 between the anode electrode E1 and cathode electrode E2 in the blue organic light-emitting element 120b - Distance D12 between the cathode electrode E2 and the second organic light-emitting stack in the red organic light-emitting element 120r

[0204] The margin GM of the cutoff gap OG can be set with the distance between the cathode electrode E2 and the second organic light-emitting stack in the red organic light-emitting element 120r as the minimum value, and the distance between the anode electrode E1 and the cathode electrode E2 in the blue organic light-emitting element 120b as the maximum value. Therefore, the margin GM of the cutoff gap OG can be set between the distance between the cathode electrode E2 and the second organic light-emitting stack in the red organic light-emitting element 120r and the distance between the anode electrode E1 and the cathode electrode E2 in the blue organic light-emitting element 120b.

[0205] The thickness of the barrier gap OG can be set based on a barrier gap setting method calculated from the thicknesses of the organic light-emitting elements 120r, 120g, and 120b for each color, and based on deposition simulation experiments and actual deposition experiments.

[0206] Taking into account the margin GM of this cutoff gap OG, some layers constituting the green organic light-emitting element 120g, such as the hole injection layer HIL, the first organic light-emitting stack ST21, and the charge generation layer 72, are disconnected in accordance with the cutoff structure 105B. This prevents an electrical short circuit between the anode electrode E1 and the cathode electrode E2 in the green organic light-emitting element 120g, thereby preventing losses due to leakage current and image quality defects.

[0207] Figure 10A is a cross-sectional view illustrating an organic light-emitting device according to the fifth embodiment. Figure 10B is a cross-sectional view illustrating the connection structure in the asymmetrical interruption connection structure of Figure 10A. Figure 10C is a cross-sectional view illustrating the interruption structure in the asymmetrical interruption connection structure of Figure 10A.

[0208] Figures 10A to 10C illustrate the green organic light-emitting element 120g shown in Figures 4A to 4C, but the red organic light-emitting element 120r and the blue organic light-emitting element 120b can also have the same structure and shape as the green organic light-emitting element 120g shown in Figure 10A. Since Figure 10A is an enlarged view of the asymmetrical blocking coupling structure 105 shown in Figure 4A, explanations that overlap with explanations related to Figure 4A may be omitted.

[0209] The fifth embodiment is identical to the fourth embodiment (Figures 8A to 8C) except for the cathode electrode 123g, which includes the first conductive layer 123-1 and the second conductive layer 123-2. Components having the same shape, structure, and / or function as those in the fourth embodiment (Figures 8A to 8C) are denoted by the same reference numerals, and detailed descriptions are omitted.

[0210] Referring to Figures 4A, 4B, and 10A to 10, the organic light-emitting device according to the fifth embodiment may include a substrate 110, a first bank 111-1, a first protrusion 130-1, a green organic light-emitting element 120g, and the like.

[0211] In the fourth embodiment (Figures 8A to 8C), the cathode electrode 123g includes a single layer containing Mg:Ag, whereas in the fifth embodiment (Figures 10A to 10C), the cathode electrode 123g may include multiple conductive layers 123-1, 123-2. The drawings show a cathode electrode 123g including a first conductive layer 123-1 and a second conductive layer 123-2, but the cathode electrode 123g may contain three or more conductive layers.

[0212] For example, the step coverage characteristics of the second conductive layer 123-2 are superior to those of the first conductive layer 123-1. The first conductive layer 123-1 may include materials that have excellent bonding characteristics and work function characteristics with the green organic light-emitting element 120g. For example, the first conductive layer 123-1 may include metals such as Mg:Ag. The second conductive layer 123-2 may include conductive oxide materials such as ITO and IZO.

[0213] For example, the first conductive layer 123-1 has inferior step coverage characteristics compared to the second conductive layer 123-2, and the film quality of the first conductive layer 123-1 is not good, making it difficult to deposit inside the undercut structure 151 of the connecting structure 105A.

[0214] In the example, the metal deposition material, such as Mg:Ag, that forms the first conductive layer 123-1 is deposited only on the green subpixel SPg at a deposition angle θc. That is, the metal deposition material may not be deposited inside the undercut structure 151 of the connecting structure 105A. In such cases, the second conductive layer 123-2 is formed on the first conductive layer 123-1 and extends deep into the undercut structure 151 of the connecting structure 105A, thereby electrically connecting the second conductive layer 123-2 to the auxiliary electrode AC of the connecting structure 105A.

[0215] Therefore, since it is not necessary to design the position of the evaporation source so that the evaporation angle θc is very small so that the metal deposition material is deposited inside the undercut structure of the connecting structure 105A, the design freedom of the evaporation source is increased.

[0216] On the other hand, the low-resistance organic vapor deposition material and the high-resistance organic vapor deposition material that constitute the green organic light-emitting element with a two-stack structure (120g in Figure 9) are deposited on the green subpixel SPg at a deposition angle θo. The hole injection layer and charge generation layer are formed using the low-resistance organic light-emitting material. The hole transport layer, the green organic light-emitting layer 122g, the electron transport layer, the electron injection layer, etc., are formed using the high-resistance material.

[0217] Since the deposition angle θc is the same as or similar to the deposition angle θo, the target-source distance of the evaporation source that discharges metal deposition material and the target-source distance of the evaporation source that discharges low-resistance organic deposition material or high-resistance organic deposition material can be designed to be the same. This allows the evaporation sources in each of the multiple chambers constituting the deposition system to be set to be the same or similar, thus simplifying the design of each chamber.

[0218] As mentioned above, a deposition material composed of conductive oxide materials such as ITO and IZO, which have excellent step coverage characteristics, is deposited onto the substrate 110 using a sputtering process. Because the sputtering process disperses the deposition material over the entire area of ​​the substrate 110, the deposition material is deposited not only on the green subpixel SPg but also deep inside the undercut structure 151 of the linkage structure 105A. As a result, the second conductive layer 123-2 is formed not only on the upper side of the green organic light-emitting element 120g, but also on the upper side of the third layer 133 constituting the linkage structure 105A, the side of the first layer 131, and the lower side, side and / or upper side of the second layer 132.

[0219] The first conductive layer 123-1 contributes to improving the electrical / optical properties with respect to the green organic light-emitting element 120g, and the second conductive layer 123-2 strengthens the electrical connectivity between the green organic light-emitting element 120g and the auxiliary electrode AC. This not only improves the electrical / optical properties of each subpixel SPr, SPg, and SPb, but also prevents image quality defects caused by poor electrical connectivity between each subpixel SPr, SPg, and SPb.

[0220] Furthermore, in the shielding structure 105B, the margin of the shielding gap OG (GM in Figure 9) may be insufficient to properly shield the organic films 122-1, 122-2, and 122-3, which have different element thicknesses for each color pixel, with the same shielding gap OG, causing the first conductive layer 123-1 to open. The second conductive layer 123-2 is formed on top of the first conductive layer 123-1 where the disconnection occurred, and the excellent step coverage characteristic can be utilized to repair the disconnection in the first conductive layer 123-1. Therefore, in the asymmetric shielding connection structure 105 of the embodiment, the double layers 123-1 and 123-2 of the cathode electrode 123g can have a mutually complementary relationship.

[0221] As shown in Figure 10B, since the deposition angle θc is the same as or similar to the deposition angle θo, one end of each of the hole injection layer and charge generation layer made of low-resistance organic light-emitting material, the green organic light-emitting layer 122g made of high-resistance material, and the first conductive layer 123-1 can be positioned on a vertical or diagonal line. Alternatively, one end of the first conductive layer 123-1 can cover the side of one end of the green organic light-emitting layer 122g.

[0222] Although the drawing shows that one end of the first conductive layer 123-1 is in contact with the third layer 133, which is the auxiliary electrode AC, it is not necessary for it to be in contact with the third layer 133. Even if the first conductive layer 123-1 is not in contact with the third layer 133, the second conductive layer 123-2 is in contact with the first layer 131, the second layer 132, and the third layer 133, which are the auxiliary electrodes, so no electrical connection failure occurs.

[0223] On the other hand, as shown in Figure 10C, the blocking layer 113 forms a blocking structure 105B. For example, the side of the blocking layer 113 penetrates into the interior of the first bank 111-1 from the side of the first bank 111-1, thereby forming an undercut structure 152 in the blocking structure 105B. In such a case, a separation structure 125-2 is formed in a part of the green organic light-emitting element (120g in Figure 9), corresponding to the blocking structure 105B, such as the hole injection layer HIL, the first organic light-emitting stack ST21, and the charge generation layer 72. In this separation structure 125-2, the hole injection layer HIL, the first organic light-emitting stack ST21, and the charge generation layer 72 are disconnected, thereby blocking the electrical short between the anode electrode 121g and the cathode electrode 123g in the green organic light-emitting element 120g, preventing loss due to leakage current and poor image quality.

[0224] Figure 11 shows the deposition simulation results of a green organic light-emitting element deposited around the undercut structure of the shielding structure. During the actual deposition process, the deposition material is deposited on the deposition surface with the deposition surface positioned facing the evaporation source located on the lower side of the chamber. Therefore, the deposition simulation results shown in Figure 11 may represent a state where the substrate 110, on which the actual deposition process was performed, is rotated 180 degrees. The deposition simulation results of the green organic light-emitting element shown in the figure can be applied similarly or in a similar manner to red organic light-emitting elements and blue organic light-emitting elements.

[0225] The numerical values ​​used in the following vapor deposition simulation results are merely examples and can be changed in actual or optimized products.

[0226] As shown in Figure 11, the total thickness of the green organic light-emitting element may be 3,336A. The cutoff gap OG may be, for example, 0.18μm, as the distance between the anode electrode 121g and the bank 111-1 in the cutoff structure 105B.

[0227] In such cases, the barrier layer and bank 111-1 can have different etching selectivity ratios. For example, the etching rate of the barrier layer may be greater than that of bank 111-1. Therefore, the barrier layer is etched faster than bank 111-1, forming an undercut structure 152 in the barrier structure 105B.

[0228] The barrier layer may include metals or inorganic materials. Reference numeral 124g in the drawing may indicate a capping layer.

[0229] Figures 12A to 12G show various protrusions.

[0230] As shown in Figure 12A, the first layer 131, the second layer 132, and the third layer 133 can have different etching selectivity ratios.

[0231] The first layer 131 may contain a metal with a high etching rate. The first layer 131 may contain aluminum (Al), copper (Cu), or alloys thereof. The second layer 132 and the third layer 133 may contain the same material. The second layer 132 and the third layer 133 may each contain a metal having a lower etching rate than the first layer 131. For example, the second layer 132 and the third layer 133 may each contain titanium (Ti), molybdenum (Mo), molybdenum-titanium (MoTi), etc. The second layer 132 and the third layer 133 may each contain a conductive oxide material having a lower etching rate than the first layer 131. For example, the second layer 132 and the third layer 133 may each contain ITO, IZO, etc.

[0232] Since the second layer 132 and the third layer 133 contain the same material, the etching selectivity ratios of the material in the second layer 132 and the material in the third layer 133 are also the same. In such a case, the sides of the second layer 132 and the sides of the third layer 133 may be located on a vertical or diagonal line, but are not limited to this.

[0233] In Figure 12A, the first layer 131, the second layer 132, and the third layer 133 can be auxiliary electrodes AC. In such cases, as shown in Figure 10A, the second conductive layer 123-2 of the cathode electrode 123g is in contact with at least one of the first layer 131, the second layer 132, or the third layer 133 for electrical connection between the cathode electrode 123g and the auxiliary electrodes AC.

[0234] As shown in Figure 12B, the first layer 131, the second layer 132, and the third layer 133 can have different etching selectivity ratios.

[0235] The first layer 131 may contain a metal with a high etching rate. The first layer 131 may contain aluminum (Al), copper (Cu), or an alloy thereof.

[0236] The second layer 132 and the third layer 133 may contain different materials. The second layer 132 may contain a metal having an etching rate lower than that of the first layer 131. For example, the second layer 132 may contain titanium (Ti), molybdenum (Mo), molybdenum-titanium (MoTi), etc. The second layer 132 may contain a conductive oxide material having an etching rate lower than that of the first layer 131. For example, the second layer 132 may contain ITO, IZO, etc. The third layer 133 may contain an inorganic material having an etching rate lower than that of the first layer 131. For example, the third layer 133 may contain silicon nitride (SiNx), silicon oxide (SiOx), silicon nitrogen oxide (SiON), etc.

[0237] Since the second layer 132 and the third layer 133 contain different materials, the etching selectivity ratios of the materials of the second layer 132 and the third layer 133 may be different, but this is not limited. In such a case, the sides of the second layer 132 and the sides of the third layer 133 do not have to be located on a vertical line. For example, the sides of the third layer 133 may be formed to extend further in the direction of adjacent subpixels than the sides of the second layer 132, but this is not limited.

[0238] In Figure 12B, the first layer 131 and the second layer 132 can be auxiliary electrodes AC. In such a case, as shown in Figure 10A, the second conductive layer 123-2 of the cathode electrode 123g may be in contact with at least one of the first layer 131 or the second layer 132 for electrical connection between the cathode electrode 123g and the auxiliary electrode AC. For example, the second conductive layer 123-2 can be in contact with the first layer 131 or the second layer 132 via the upper side of the third layer 133.

[0239] As shown in Figure 12C, the first layer 131, the second layer 132, and the third layer 133 can have different etching selectivity ratios.

[0240] In Figure 12C, the first layer 131 may contain the same material as the first layer 131 shown in Figure 12B. In Figure 12C, the materials of the second layer 132 and the third layer 133 may be the opposite of the materials of the second layer 132 and the third layer 133 shown in Figure 12B. That is, in Figure 12C, the second layer 132 may contain an inorganic material having an etching rate smaller than that of the first layer 131. In Figure 12C, the third layer may contain a metal or a conductive oxide material having an etching rate smaller than that of the first layer 131.

[0241] In Figure 12C, the first layer 131 and the third layer 133 can be auxiliary electrodes AC. In such cases, as shown in Figure 10A, the second conductive layer 123-2 of the cathode electrode 123g may be in contact with at least one of the first layer 131 or the third layer 132 for electrical connection between the cathode electrode 123g and the auxiliary electrodes AC. For example, the second conductive layer 123-2 may be in contact with the upper side of the third layer 133 or with the side of the first layer 131.

[0242] As shown in Figure 12D, the first layer 131, the second layer 132, and the third layer 133 can have different etching selectivity ratios.

[0243] In Figure 12D, the materials of the second layer 132 and the third layer 133 may be the same as the materials of the second layer 132 and the third layer 133 shown in Figure 12A, respectively. In Figure 12D, the first layer 131 may include a material having a higher etching rate than the second layer 132 and the third layer 133. For example, the first layer 131 may include silicon nitride (SiNx), silicon oxide (SiOx), silicon nitrogen oxide (SiON), etc.

[0244] In Figure 12D, the second layer 132 and the third layer 133 can be auxiliary electrodes AC. In such cases, as shown in Figure 10A, the second conductive layer 123-2 of the cathode electrode 123g may be in contact with at least one of the second layer 132 or the third layer 132 for electrical connection between the cathode electrode 123g and the auxiliary electrodes AC. For example, the second conductive layer 123-2 may be in contact with the upper side of the third layer 133 or the lower side of the second layer 131.

[0245] As shown in Figure 12E, the first layer 131, the second layer 132, and the third layer 133 can have different etching selectivity ratios.

[0246] In Figure 12E, the first layer 131 may contain a material with a fast etching rate, while the second layer 132 and the third layer 133 may contain materials with a slow etching rate. For example, the first layer 131 and the second layer 132 may contain different inorganic materials, while the third layer 133 may contain a metal or a conductive oxide material.

[0247] In Figure 12E, the third layer 133 can be an auxiliary electrode AC. In this case, as shown in Figure 10A, the second conductive layer 123-2 of the cathode electrode 123g can be in contact with the third layer 132 for electrical connection between the cathode electrode 123g and the auxiliary electrode AC.

[0248] As shown in Figure 12F, the first layer 131, the second layer 132, and the third layer 133 can have different etching selectivity ratios.

[0249] In Figure 12F, the first layer 131 may contain a material with a fast etching rate, while the second layer 132 and the third layer 133 may contain materials with a slow etching rate. For example, the first layer 131 may contain aluminum (Al), copper (Cu), or alloys thereof. The second layer 132 and the third layer 133 may contain silicon nitride (SiNx), silicon oxide (SiOx), silicon nitrogen oxide (SiON), etc., respectively.

[0250] In Figure 12E, the first layer 131 can be an auxiliary electrode AC. In this case, as shown in Figure 10A, the second conductive layer 123-2 of the cathode electrode 123g can be in contact with the first layer 131 for electrical connection between the cathode electrode 123g and the auxiliary electrode AC.

[0251] As shown in Figure 12G, the first layer 131, the second layer 132, and the third layer 133 can have different etching selectivity ratios.

[0252] In Figure 12G, the first layer 131 may contain a material with a fast etching rate, while the second layer 132 and the third layer 133 may contain materials with a slow etching rate. The first layer 131 and the third layer 133 may contain different inorganic materials. The second layer 132 may contain a metal or a conductive oxide material.

[0253] In Figure 12E, the second layer 132 can be an auxiliary electrode AC. In this case, as shown in Figure 10A, the second conductive layer 123-2 of the cathode electrode 123g can be in contact with the underside of the second layer 132 via the upper side of the third layer 133 and the side of the first layer 131 for electrical connection between the cathode electrode 123g and the auxiliary electrode AC.

[0254] Figures 13A to 13C show various arrangement positions of the blocking structure in the asymmetric blocking connection structure according to the embodiment. The drawings show the connection structure 105A and blocking structure 105B of the first protrusion 130-1 shown in Figure 4A, but the same can be applied to the connection structure 105A and blocking structure 105B of the second protrusion 130-2.

[0255] As shown in Figures 4A and 13A, the first bank 111-1 is placed on the substrate 110. The first bank 111-1 is placed on the substrate 110 between the red subpixel SPr and the green subpixel SPg.

[0256] The first projection 130-1 is positioned above the first bank 111-1. The first projection 130-1 may have a connecting structure 105A. The first projection 130-1 may include a first layer 131, a second layer 132 on the first layer 131, and a third layer 133 below the first layer 131. The third layer 133 may be omitted. Although not shown, a fourth layer is positioned on the second layer 132. The fourth layer may, but is not limited to, act as a stopper to prevent etching of the second layer 132.

[0257] The first layer 131, the second layer 132, and the third layer 133 may include materials having different etching selectivity ratios. For example, if the etching rate of the first layer 131 is greater than that of the second layer 132 and / or the third layer 133, an undercut structure 151 is formed in which the side of the first layer 131 extends inward from the side of the second layer 132 and the side of the third layer 133 into the first projection 130-1.

[0258] At least one of the first layer 131, the second layer 132, or the third layer 133 can serve as an auxiliary electrode AC for electrically connecting the cathode electrode. For example, a green organic light-emitting element is arranged in a green subpixel, including an anode electrode, a green organic light-emitting layer, and a cathode electrode.

[0259] The cathode electrode extends from the green organic light-emitting layer toward the first protrusion 130-1 and is electrically connected to the auxiliary electrode AC.

[0260] On the other hand, the blocking structure 105B is disposed below the edge region of the first bank 111-1. The blocking structure 105B may include at least one or more blocking layers 113a. The undercut structure 152 is formed when a side portion of the at least one or more blocking layers 113a enters the inner side of the first bank 111-1 from a side portion of the first bank 111-1. The blocking structure 105B interrupts some layers constituting the green organic light-emitting element (the layer made of a low-resistance organic light-emitting material), such as a hole injection layer, a first organic light-emitting stack, and a charge generation layer, thereby blocking an electrical short between the anode electrode and the cathode electrode in the green organic light-emitting element, preventing loss due to leakage current and image quality deterioration.

[0261] In an embodiment, the connection structure 105A functions to allow the cathode electrode to be connected to the auxiliary electrode AC, and the blocking structure 105B can function to block an electrical short between the anode electrode and the cathode electrode constituting the green organic light-emitting element. In this way, the structure including the connection structure 105A and the blocking structure 105B disposed around the first bank 111-1 can be referred to as an asymmetric blocking connection structure (105 in FIG. 4A).

[0262] As illustrated in FIG. 13B, the blocking layer 113b included in the blocking structure 105B is disposed inside the first bank 111-1.

[0263] The first bank 111-1 may include a 1-1th bank 111a and a 1-2th bank 111b on the 1-1th bank 111a. The 1-1th bank 111a and the 1-2th bank 111b may include the same material, but the present invention is not limited thereto.

[0264] The barrier layer 113b is positioned between the first-first bank 111a and the first-second bank 111b. The etching rate of the barrier layer 113b may be greater than that of the first-first bank 111a and / or the first-second bank 111b. When the first-first bank 111a, the first-second bank 111b and the barrier layer 113b are etched, the sides of the barrier layer 113b penetrate into the first bank 111-1 from the sides of the first-first bank 111a and the first-second bank 111b, thereby forming an undercut structure 152.

[0265] As shown in Figure 13C, the blocking layer 113c of the blocking structure 105B is positioned above the first bank 111-1. For example, the blocking layer 113c is positioned between the first bank 111-1 and the first layer 131 of the first projection 130-1. If the third layer 133 is positioned below the first layer 131, the blocking layer 113c is positioned between the first bank 111-1 and the third layer 133.

[0266] The barrier layer 113c may be one of the layers forming the first protrusion 130-1. For example, the first protrusion 130-1 may include a first layer 131, a second layer 132 on the first layer 131, a third layer 133 below the first layer 131, and a fourth layer (not shown) on the second layer 132. In such a case, the first protrusion 130-1 may further include a fifth layer as the barrier layer 113c below the third layer 133.

[0267] The barrier layer 113c, the third layer 133, and the first bank 111-1 may have different etching selectivity ratios from each other.

[0268] The etching rate of the barrier layer 113c may be greater than the etching rate of the third layer 133 and / or the first bank 111-1. In this case, the side of the barrier layer 113c forms an undercut structure 152 that extends inward from the side of the third layer 133 and / or the first bank 111-1 into the first projection 130-1.

[0269] The undercut structure 151 formed by the first layer 131 between the second layer 132 and the third layer in the first protrusion 130-1 is called the first undercut structure, and the undercut structure 152 formed by the barrier layer 113c between the third layer 133 and the first bank 111-1 is called the second undercut structure, or vice versa.

[0270] The points to note depending on the formation positions of the barrier layers 113a, 113b, and 113c are as follows:

[0271] The thickness of the deposited film deposited on the barrier structure 105B may be thinner than the actual thickness formed on the light-emitting part, depending on the deposition angle, the structure of the upper film of the barrier structure 105B, and the installation position of that structure. For example, the thickness of the deposited film formed on the undercut structure 152 of the barrier structure 105B shown in Figure 13C may be 30% or more thinner than the thickness of the deposited film formed on the undercut structure 152 of the barrier structure 105B shown in Figure 13A. This is because the closer the film is to the first protrusion 130-1, the thinner the final deposited film becomes due to the shadow effect of the first protrusion 130-1. Therefore, the thickness of the barrier gap OG can be set based on deposition simulation experiments and actual deposition experiments, in addition to a theoretical method for setting the barrier gap thickness calculated from the thicknesses of the organic light-emitting elements 120r, 120g, and 120b for each color. The 6th embodiment (Figure 14) to the 9th embodiment (Figure 17) below relate to moisture penetration barrier structures and will be described in detail with reference to Figures 14 to 17. In the descriptions of Figures 14 to 17, identical or similar reference numerals previously shown are omitted from detailed descriptions as they represent components having the same or similar shape, structure, and / or function.

[0272] Figure 14 is a cross-sectional view illustrating an organic light-emitting device according to the sixth embodiment. The drawing shows a red subpixel SPr and the first bank 130-1, but the green subpixel SPg, blue subpixel SPb, and other banks can be similarly applied.

[0273] Referring to Figure 14, the organic light-emitting device according to the sixth embodiment may include a substrate 110, a first bank 130-1, a first protrusion 130-1, a red organic light-emitting element 120r, a sealing layer 135, and the like. Since the sealing layer 135 has a moisture penetration blocking structure, moisture and other substances are blocked, preventing defects in the organic light-emitting element due to moisture and other substances.

[0274] An organic light-emitting device with a side-by-side structure is manufactured using a photolithography process in which red subpixels SPr, green subpixels SPg, and blue subpixels SPb are sequentially formed. Three photolithography processes, including exposure and etching steps, are performed to sequentially form the red subpixels SPr, green subpixels SPg, and blue subpixels SPb. In such cases, undercut structures 151, such as U-shaped caverns, are very important areas for ensuring product yield and reliability. Therefore, the sealing layer 135, which is placed on the red organic light-emitting layer 122r or cathode electrode 123r using the undercut structure 151, needs to have a structure that reliably blocks moisture, i.e., a moisture penetration blocking structure. The red organic light-emitting element 120r is composed of an anode electrode (not shown), the red organic light-emitting layer 122r, and the cathode electrode 123r.

[0275] In the embodiment, the sealing layer 135 may include a first-first insulating layer 135-1 and a first-second insulating layer 135-2 on the first-first insulating layer 135-1. For example, the first-first insulating layer 135-1 and the first-second insulating layer 135-2 may be made of different inorganic materials. For example, the first-first insulating layer 135-1 may contain a silicon oxide-based material, and the first-second insulating layer 135-2 may contain a silicon nitride-based material. For example, the first-first insulating layer 135-1 may contain an inorganic material, and the first-second insulating layer 135-2 may contain an organic material. By forming a sealing layer 135 having a double structure of the first-first insulating layer 135-1 and the first-second insulating layer 135-2, moisture and other substances are prevented from permeating the sealing layer 135 and penetrating the cathode electrode 123r and the red organic light-emitting element 120r.

[0276] Figure 15 is a cross-sectional view illustrating an organic light-emitting device according to the seventh embodiment. The drawing shows a red subpixel SPr and the first bank 130-1, but the green subpixel SPg, blue subpixel SPb, and other banks can be similarly applied.

[0277] Referring to Figure 15, the organic light-emitting device according to the seventh embodiment may include a substrate 110, a first bank 130-1, a first protrusion 130-1, a red organic light-emitting element 120r, a sealing layer 135, and the like. Since the sealing layer 135 has a moisture penetration blocking structure, moisture and other substances are blocked, preventing defects in the organic light-emitting element due to moisture and other substances.

[0278] In the seventh embodiment (Figure 15), the sealing layer 135 can have a double structure similar to that of the sixth embodiment (Figure 14). However, in the sealing layer 135 of the seventh embodiment (Figure 15), the first-first insulating layer 135-1 and the first-second insulating layer 135-2 may contain different inorganic materials. For example, the first-first insulating layer 135-1 may contain a silicon nitride-based material, and the first-second insulating layer 135-2 may contain a silicon oxide-based material. By forming a sealing layer 135 having a double structure of the first-first insulating layer 135-1 and the first-second insulating layer 135-2, moisture and other substances cannot permeate the sealing layer 135 and penetrate the cathode electrode 123r or the red organic light-emitting element 120r.

[0279] On the other hand, the organic light-emitting display device according to the seventh embodiment may include a resin layer 136. The resin layer 136 is formed inside the undercut structure 151. The resin layer 136 may be, but is not limited to, a residual film remaining from the organic film that constitutes the photosensitive pattern and the sealing layer 135 after the etching process to form the red subpixel SPr. The resin layer 136 may also be included as part of the sealing layer 135, but is not limited to that.

[0280] More specifically, after the red organic light emitting element 120r and the like are vapor-deposited over the entire area of the substrate 110, the red organic light emitting element 120r and the like are removed from the first bank 130-1, the green sub-pixel SPg and the blue sub-pixel SPb using a photosensitive pattern such that the red organic light emitting element 120r remains only in the red sub-pixel SPr. Thereafter, the photosensitive pattern is removed. The photosensitive pattern has properties such as high purity and low water vapor transmission rate (WVTR), and may comprise a transparent resin material. Even when the photosensitive pattern removing step is performed, a part of the photosensitive pattern remains without being removed inside the undercut structure 151, thereby forming the resin layer 136 as a residual film.

[0281] FIG. 16 is a cross-sectional view illustrating an organic light emitting display device according to an eighth embodiment.

[0282] Although the drawing illustrates the red sub-pixel SPr and the first bank 130-1, the present invention can also be applied to the green sub-pixel SPg, the blue sub-pixel SPb and other banks in the same manner.

[0283] Referring to FIG. 16, the organic light emitting display device according to the eighth embodiment may comprise a substrate 110, a first bank 130-1, a first protrusion 130-1, a red organic light emitting element 120r, an encapsulation layer 135, a resin layer 136 and the like. Since the encapsulation layer 135 has a moisture penetration blocking structure, moisture and the like are blocked, thereby preventing defects of the organic light emitting element caused by moisture and the like.

[0284] In the sixth embodiment (FIG. 14) and the seventh embodiment (FIG. 15), the encapsulation layer 135 having a double structure is provided, whereas in the eighth embodiment (FIG. 16), the encapsulation layer 135 may have a triple structure.

[0285] The sealing layer 135 may include a first-first insulating layer 135-1, a first-second insulating layer 135-2 on the first-first insulating layer 135-1, and a first-third insulating layer 135-3 on the first-second insulating layer 135-2. The first-first insulating layer 135-1, the first-second insulating layer 135-2, and the first-third insulating layer 135-3 may contain different inorganic materials. For example, the first-first insulating layer 135-1 and the first-third insulating layer 135-3 may contain silicon oxide-based materials, while the first-second insulating layer 135-2 may contain silicon nitride-based materials.

[0286] The resin layer 136 is formed not only inside the undercut structure 151 but also on the red subpixel SPr.

[0287] As described above, a photosensitive pattern is formed on the red subpixel SPr in order to remove the red organic light-emitting element 120r deposited on the green subpixel SPg and blue subpixel SPb, excluding the red subpixel SPr. After the red organic light-emitting element 120r deposited on the green subpixel SPg and blue subpixel SPb is removed using the photosensitive pattern, the resin layer 136 is formed not only inside the undercut structure 151 but also on the red subpixel SPr because the photosensitive pattern is not removed. The resin layer 136 may be included as part of the sealing layer 135, but is not limited to this.

[0288] Figure 17 is a cross-sectional view illustrating an organic light-emitting device according to the ninth embodiment. The ninth embodiment is similar to the seventh embodiment (Figure 15) and the eighth embodiment (Figure 16), except for the second sealing layer 141r. In the ninth embodiment, components having the same shape, structure and / or function as those in the seventh embodiment (Figure 15) and the eighth embodiment (Figure 16) are denoted by the same reference numerals, and detailed descriptions are omitted. The drawing shows a red subpixel SPr and the first bank 130-1, but the green subpixel SPg, blue subpixel SPb, and other banks can be applied similarly.

[0289] Referring to Figure 17, the organic light-emitting device according to the ninth embodiment may include a substrate 110, a first bank 130-1, a first protrusion 130-1, a red organic light-emitting element 120r, a first sealing layer 135, a resin layer 136, a second sealing layer 141r, and the like. Since the first sealing layer 135 and the second sealing layer 141r have a moisture penetration blocking structure, moisture and other substances are blocked, preventing defects in the organic light-emitting element due to moisture and other substances.

[0290] Figure 17 illustrates the moisture penetration pathway (arrows). Specifically, moisture penetrates through the etched cross section of the red organic light-emitting layer 122r formed on the first protrusion 130-1 and the opening gap G of the undercut structure 151, moves in the direction of the anode electrode 121r of the red subpixel SPr, and penetrates along the organic light-emitting layer of the red subpixel SPr.

[0291] To more completely block these moisture penetration pathways (arrows), in this embodiment, a second sealing layer 141r is placed on the first sealing layer 135. The second sealing layer 141r may include a second-first insulating layer 141-1, a second-second insulating layer 141-2, a second-third insulating layer 141-3, etc. The second-first insulating layer 141-1, the second-second insulating layer 141-2, and the second-third insulating layer 141-3 may each include a photosensitive material. The second-first insulating layer 141-1, the second-second insulating layer 141-2, and the second-third insulating layer 141-3 may each include an inorganic material or an organic material.

[0292] On the other hand, although not shown in the figures, during the photolithography process in which blue subpixels SPb, green subpixels SPg, and red subpixels SPr are formed in that order, three insulating layers may be provided as second sealing layers on the first sealing layer 135 of the blue subpixel SPb, two insulating layers may be provided as second sealing layers on the first sealing layer 135 of the green subpixel SPg, and one insulating layer may be provided as a second sealing layer on the first sealing layer 135 of the red subpixel SPr.

[0293] Since there is no need to form a separate undercut structure 151 after the red subpixel SPr has been patterned, one insulating layer of the second sealing layer can be used as a second sealing layer on the first sealing layer 135 of the red subpixel SPr for purposes such as pad openings of the non-display area NAA at the outer edge of the panel.

[0294] If one insulating layer is not used for pad opening in the non-display area NAA, two insulating layers may be provided as second sealing layers on the first sealing layer 135 of the blue subpixel SPb, one insulating layer may be provided as a second sealing layer on the first sealing layer 135 of the green subpixel SPg, and no insulating layer may be provided on the first sealing layer of the red subpixel SPr.

[0295] On the other hand, the 1-1 insulating layer 135-1 and the 1-3 insulating layer 135-3 of the first sealing layer 135 can be made of an inorganic film based on the ALD process, which has a water permeability (WVTR) that is approximately 20 times better than that of an inorganic film based on the PECVD process. This makes it possible to realize a highly reliable product with dramatically improved water penetration barrier performance. Such a highly reliable product can be applied to organic light-emitting devices for vehicles and military use that must be guaranteed to operate for long periods in high temperature / high humidity environments.

[0296] Although not shown in the figures, a polymer resin may be applied to the second-third insulating layer 141-3 of the second sealing layer 141r using an inkjet process to form a resin layer, and further sealing layers or other insulating layers containing inorganic materials may be formed on the resin layer.

[0297] Figures 18A to 18D show at least one additional layer added between the electron injection layer and the cathode electrode of the second organic light-emitting stack.

[0298] As shown in Figure 18A, a cathode electrode E2 is formed on the electron injection layer EIL. As shown in Figure 18B, a first conductive layer (123-1 in Figure 10A) is deposited on the electron injection layer EIL, and a second conductive layer 123-2 is deposited on the first conductive layer 123-1 using a sputtering process. The cathode electrode E2 is formed by the first conductive layer 123-1 and the second conductive layer 123-2.

[0299] The electron injection layer EIL may contain Yb or Li, the first conductive layer 123-1 may contain Mg:Ag, and the second conductive layer 123-2 may contain ITO, IZO, etc. In such cases, the electron injection layer EIL and the first conductive layer 123-1 may be damaged by radicals from the plasma during the sputtering process.

[0300] A plasma protective layer PPL is formed on the electron injection layer EIL. As an example, as shown in Figure 18C, the plasma protective layer PPL may be formed between the electron injection layer EIL and a first conductive layer 123-1 containing Mg:Ag. As another example, as shown in Figure 18D, the plasma protective layer PPL may be formed between a first conductive layer 123-1 containing Mg:Ag and a second conductive layer 123-2 containing IZO or the like.

[0301] When the material properties of the plasma protective layer (PPL), such as refractive index, electrical conductivity, and transmittance, as well as the type and amount of doping material and the thickness of each layer, are optimized, the luminous efficiency of the organic light-emitting display device can be improved.

[0302] Figures 19A to 19C show the simulation results for brightness according to the thickness of the capping layer containing LiF in the comparative example and the example. Figures 19B and 19C show the results of comparing the light efficiencies of the red organic light-emitting element 120r, green organic light-emitting element 120g, and blue organic light-emitting element 120b, respectively, according to the thickness of the inorganic capping layer LiF and the organic capping layer shown in Figure 18D, with the light efficiencies in the comparative example (Figure 19A).

[0303] In FIGS. 19A to 19C, the horizontal axis represents the thickness of the inorganic capping layer, and the vertical axis can represent luminance.

[0304] In FIG. 19A, when the thickness of the inorganic capping layer is 40 nm, the luminance of each of the red organic light emitting element 120r, the green organic light emitting element 120g and the blue organic light emitting element 120b, in which the thickness of the organic capping layer is 90 nm, is 1024 cd / cm 2 , 1056 cd / cm 2 and 185 cd / cm 2 , respectively.

[0305] As illustrated in FIG. 19B, in a structure additionally provided with a plasma protective layer PPL, when the thickness of the inorganic capping layer is 160 nm, the luminance of each of the red organic light emitting element 120r, the green organic light emitting element 120g and the blue organic light emitting element 120b, in which the thickness of the organic capping layer is 60 nm, is 767 cd / cm 2 , 939 cd / cm 2 and 450 cd / cm 2 , respectively.

[0306] As illustrated in FIG. 19C, in a structure additionally provided with a plasma protective layer PPL, the thickness of the inorganic capping layer is 144 nm, and the luminance of each of the red organic light emitting element 120r, the green organic light emitting element 120g and the blue organic light emitting element 120b, in which the thickness of the organic capping layer is 46 nm, is 1303 cd / cm 2 , 1404 cd / cm 2 and 291 cd / cm 2 , respectively.

[0307] As illustrated in FIGS. 19A to 19C, it can be seen that the luminance of each of the red organic light emitting element 120r, the green organic light emitting element 120g and the blue organic light emitting element 120b changes in accordance with the thickness of the inorganic capping layer.

[0308] Therefore, by optimizing the thickness of the inorganic capping layer and the organic capping layer, the luminous efficiency of the red organic light-emitting element 120r, green organic light-emitting element 120g, and blue organic light-emitting element 120b in the example is much greater than that of the comparative example, and thus the brightness can also be increased.

[0309] Figure 20 is a schematic plan view illustrating an organic light-emitting display device according to the second embodiment. Figure 21 is a plan view illustrating one pixel of Figure 20. The drawings show the substrate 110 being transported along the second direction Y, but this is not limiting.

[0310] As described above, in the first embodiment (Figures 1 and 2), the red organic light-emitting element 120r, the green organic light-emitting element 120g, and the blue organic light-emitting element 120b may be arranged in a stripe pattern along the second direction Y.

[0311] In contrast, as shown in Figures 20 and 21, in the second embodiment, the red organic light-emitting element 120r, the green organic light-emitting element 120g, and the blue organic light-emitting element 120b may be arranged in a dot pattern, spaced apart from each other. The red organic light-emitting element 120r is placed in the red subpixel SPr, the green organic light-emitting element 120g is placed in the green subpixel SPg, and the blue organic light-emitting element 120b is placed in the blue subpixel SPb. The red subpixel SPr, the green subpixel SPg, and the blue subpixel SPb constitute one pixel P.

[0312] For example, the red organic light-emitting element 120r and the green organic light-emitting element 120g may each be disconnected along the second direction Y by one row line. For example, the blue organic light-emitting element 120b may be disconnected along the second direction Y by two row lines.

[0313] For example, the area of ​​the blue organic light-emitting element 120b may be larger than the area of ​​the red organic light-emitting element 120r or the area of ​​the red organic light-emitting element 120g. The length of the blue organic light-emitting element 120b in the second direction Y may be similar to, but is not limited to, the sum of the widths of the red organic light-emitting element 120r and the green organic light-emitting element 120g.

[0314] On the other hand, in the pixel structures shown in Figures 20 and 21, there are no connecting structures (105A in Figure 4A) between adjacent subpixels along the first direction X, but along the second direction Y, each subpixel SPr, SPg, and SPb may be provided with at least two or more corners of an asymmetrical blocking connecting structure 105, i.e., a connecting structure 105A and a blocking structure 105B.

Claims

1. Banks between subpixels on the substrate, The subpixel is provided with an anode electrode, The anode electrode and the bank are disposed on the organic light-emitting layer including a hole injection layer, A cathode electrode is disposed on the organic light-emitting layer and is in contact with the end of the hole injection layer, The edge region of the bank includes a blocking structure, The organic light-emitting layer has a separation structure corresponding to the blocking structure, The hole injection layer is interrupted in the separation structure, in an organic light-emitting display device.

2. The organic light-emitting display device according to claim 1, wherein the shielding structure includes at least one shielding layer that extends inward from the side of the bank.

3. The blocking structure has an undercut structure having a blocking gap corresponding to the width of the blocking layer, The margin of the aforementioned blocking gap is The organic light-emitting device according to claim 2, wherein the distance is set between the distance between the cathode electrode of the red organic light-emitting element having the greatest thickness and the second organic light-emitting stack and the distance between the anode electrode and the cathode electrode of the blue organic light-emitting element having the smallest thickness.

4. The organic light-emitting device according to claim 3, wherein the thickness of the barrier gap is set based on a barrier gap setting method calculated from the thickness of organic light-emitting elements of different colors, and based on a deposition simulation experiment and an actual deposition experiment.

5. The aforementioned organic light-emitting layer is A first organic light-emitting stack is placed between the hole injection layer and the charge generation layer, The charge generation layer and the cathode electrode are interposed to form a second organic light-emitting stack. The organic light-emitting display device according to claim 1, wherein the cathode electrode is in contact with the end of the charge generation layer.

6. The organic light-emitting device according to claim 5, wherein the first organic light-emitting layer and the charge-generating layer are disconnected in the separation structure.

7. The cathode electrode includes at least one of the first conductive layer or the second conductive layer. The first conductive layer contains an Mg:Ag alloy, The organic light-emitting display device according to claim 1, wherein the second conductive layer comprises a conductive oxidizing material.

8. The upper side of the bank further includes a protrusion, The protruding portion has a connecting structure that includes an auxiliary electrode electrically connected to the cathode electrode. The protruding portion includes a first layer and a second layer on the first layer. The organic light-emitting display device according to claim 7, wherein the connecting structure has an undercut structure in which the side portion of the first layer extends inward from the side portion of the second layer into the protruding portion.

9. The second conductive layer is disposed on the first conductive layer, The first conductive layer is disposed on the organic light-emitting layer, The organic light-emitting display device according to claim 8, wherein the second conductive layer is in contact with the side of the first layer and the underside of the second layer.

10. The aforementioned protrusion further includes a third layer below the first layer, The organic light-emitting display device according to claim 8, wherein the side portion of the third layer is located on the same line as the side portion of the second layer, or extends from the side portion of the second layer in the direction of the subpixel.

11. The organic light-emitting device according to claim 10, wherein at least one of the first layer, the second layer, or the third layer is the auxiliary electrode.

12. The hole injection layer is placed on the third layer, The organic light-emitting device according to claim 10, wherein the first conductive layer is in contact with the end of the hole injection layer and the upper side of the third layer.

13. The second conductive layer is disposed on the first conductive layer, The first conductive layer is disposed on the organic light-emitting layer, The organic light-emitting device according to claim 10, wherein the second conductive layer is in contact with the side of the first layer, the lower side of the second layer, the end of the hole injection layer, and the upper side of the third layer.

14. The organic light-emitting display device according to claim 10, wherein the protruding portion further comprises a fourth layer on the second layer.

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