Substrate processing equipment

Abstract

The present invention provides a substrate processing apparatus comprising: a process chamber having a process processing space formed inside; a diffusion cover providing a diffusion space for process gas supplied to the process chamber; a shower head coupled to the diffusion cover for spraying process gas in the diffusion space; and a substrate support for raising and lowering a substrate inside the process chamber, wherein the diffusion cover includes a guide member positioned around the shower head on the diffusion cover for diffusing process gas outward from the center of the substrate; and a diffusion plate positioned on the guide member, wherein the guide member includes an inner inclined surface that slopes downward from the outer casing of the shower head so as to gradually approach the substrate, and the outer end of the inner inclined surface is positioned outside the outer casing of the substrate. Furthermore, the present invention provides a substrate processing apparatus comprising: a process chamber having a process processing space for a substrate formed inside; and a diffusion cover disposed to cover the upper part of the process chamber and providing a diffusion space for supplied process gas, wherein the diffusion cover includes a first region having an inner inclined surface that slopes downward so as to gradually approach the substrate from the outer bottom surface of the shower head; a second region having a flat portion that extends outward parallel to the substrate from the outer end of the first region; and a third region having an outer inclined surface that slopes upward toward the outside from the outer end of the second region, wherein the outer end of the inner inclined surface is positioned outside the outer casing of the substrate.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of reducing gas consumption and providing a uniform deposition rate in an edge region of a substrate similar to that in a central region by improving the structure of a guide member in a process processing space.

Background Art

[0002] Thin film deposition methods such as Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) are used for depositing a thin film on a substrate. In the case of chemical vapor deposition or atomic layer deposition, a process gas causes a chemical reaction on the surface of the substrate, whereby a thin film can be formed. In particular, in the case of atomic layer deposition, since one layer of the process gas adsorbed on the surface of the substrate forms the thin film, it is possible to form a thin film having a thickness similar to the diameter of an atom.

[0003] To expand the range of process temperatures, Plasma Enhanced Chemical Vapor Deposition (PECVD) or Plasma Enhanced Atomic Layer Deposition (PEALD) is used. Plasma enhanced chemical vapor deposition and plasma enhanced atomic layer deposition allow processing at lower temperatures compared with chemical vapor deposition and atomic layer deposition, and thus can improve the physical properties of the thin film.

[0004] However, in such conventional deposition processes, a problem has been raised in that even when a sufficiently large amount of process gas is supplied, different deposition rates resulting in different thicknesses are exhibited between the central region and the edge region of the substrate.

Prior Art Documents

Patent Documents

[0005] [Patent Document 1] Korean Registered Patent Publication No. 10-1264695 [Overview of the project] [Problems that the invention aims to solve]

[0006] The present invention aims to solve the above-mentioned problems, and more specifically, to provide a substrate processing apparatus that can reduce gas consumption while providing a uniform deposition rate in the edge region of the substrate, similar to the central region, by improving the structure of the guide member.

[0007] The problems that the present invention aims to solve are not limited to those described above, and other objectives not described can be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0008] To achieve the above objectives, the present invention provides a substrate processing apparatus comprising: a process chamber having a process processing space formed inside; a diffusion cover providing a diffusion space for process gas supplied to the process chamber; a shower head coupled to the diffusion cover and injecting process gas in the diffusion space; and a substrate support for raising and lowering a substrate inside the process chamber, wherein the diffusion cover includes a guide member positioned around the shower head on the diffusion cover and diffusing the process gas outward from the center of the substrate; and a diffusion plate positioned on the guide member, wherein the guide member includes an inner inclined surface that slopes downward so as to gradually approach the substrate from the outer casing of the shower head, and the outer end of the inner inclined surface is positioned outside the outer casing of the substrate.

[0009] The guide member may include a flat portion extending outward from the outer end of the inner inclined surface parallel to the substrate or substrate support portion, and an outer inclined surface that slopes upward from the outer end of the flat portion so as to gradually move away from the substrate support portion outward.

[0010] The planar portion may be arranged such that at least a portion of it overlaps with a heater provided at the tip of the substrate or inside the substrate support portion.

[0011] The first inclination angle formed by the inner inclined surface with respect to the substrate may be smaller than the second inclination angle formed by the outer inclined surface with respect to the substrate.

[0012] The length of the planar portion may be longer than a first length from the outer tip of the substrate to the outer tip of the inner inclined surface, or a second length from the outer tip of the planar portion to the inner tip of the edge ring positioned in the edge region of the substrate support, or a third length from the inner tip of the edge ring to the outer tip of the edge inclined surface formed outward.

[0013] The distance between the outer inclined surface and the edge inclined surface may be at least the same as, or greater than, the distance between the flat portion and the substrate, or the distance between the flat portion and the upper surface of the substrate support portion.

[0014] The distance between the outer inclined surface and the edge inclined surface may be constant or be formed to increase toward the outward direction.

[0015] The second inclination angle may be at least the same as, or smaller than, the third inclination angle formed with respect to the substrate by the inclined surface that slopes upward from the outer tip of the outer inclined surface to the lowest tip of the diffusion cover.

[0016] The shower head may be formed to have a diameter smaller than that of the substrate.

[0017] The guide member and the diffusion plate can be formed integrally.

[0018] The present invention also provides a substrate processing apparatus comprising: a process chamber having a process processing space for a substrate formed inside; and a diffusion cover disposed to cover the upper part of the process chamber and providing a diffusion space for supplied process gas, wherein the diffusion cover includes a first region having an inner inclined surface that slopes downward so as to gradually approach the substrate from the outer bottom surface of the shower head; a second region having a flat portion that extends outward parallel to the substrate from the outer end of the first region; and a third region having an outer inclined surface that slopes upward toward the outside from the outer end of the second region, the outer end of the inner inclined surface being positioned outside the outer casing of the substrate.

[0019] Specific details of other embodiments are included in the detailed description and drawings. [Effects of the Invention]

[0020] According to the substrate processing apparatus according to the embodiment of the present invention, Firstly, by increasing the pressure of the process gas between the showerhead and the substrate and reducing its volume, the uniformity of the process gas deposition can be improved. Secondly, the amount of gas supplied will decrease, and the resulting inflow of foreign matter will be minimized. Thirdly, by improving the shape of the guide member, the reaction time of the gas on the substrate can be increased. Fourthly, by improving the environment for exhausting the increased pressure in the diffusion space, the exhaust speed can be improved, and the process time can be shortened. Fifth, by improving the diffusion plate and guide member into an integrated unit, the interface between them is eliminated, preventing gas from entering the interface and simultaneously improving thermal management characteristics.

[0021] The effects of the present invention are not limited to those described above, and other effects not described can be clearly understood by those skilled in the art from the claims.

[0022] The above-described summary, as well as the detailed description of the preferred embodiments of the present application described below, can be better understood when read in conjunction with the accompanying drawings. Preferred embodiments are shown in the drawings for the purpose of illustrating the present invention. However, it should be understood that the present application is not limited to the exact arrangements and means shown. Brief Description of the Drawings

[0023] [Figure 1] FIG. 1 is a perspective view showing a substrate processing apparatus according to an embodiment of the present invention. [Figure 2] FIG. 2 is a cross-sectional view showing a state where a substrate support part is moved to a process position in the substrate processing apparatus shown in FIG. 1. [Figure 3] FIG. 3 is an exploded perspective view showing the substrate processing apparatus shown in FIG. 1 in an exploded manner. [Figure 4] FIG. 4 is a cross-sectional view showing a process chamber of the substrate processing apparatus shown in FIG. 3. [Figure 5a] FIG. 5 is an exploded perspective view showing a partial configuration of the substrate processing apparatus shown in FIG. 3 as viewed from below. [Figure 5b] FIG. 5b is a bottom view illustrating the bottom surface of the diffusion cover 200 shown in FIG. 5a. [Figure 6] FIG. 6 is a vertical cross-sectional view of the substrate processing apparatus shown in FIG. 5. [Figure 7] FIG. 7 is a partially enlarged view showing an enlarged periphery of a diffusion space in the substrate processing apparatus shown in FIG. 2. [Figure 8] FIG. 8 is an enlarged cross-sectional view showing a central region of the diffusion cover in the substrate processing apparatus shown in FIG. 2. [Figure 9] FIG. 9 is a reference view showing another embodiment of the diffusion cover for the substrate processing apparatus shown in FIG. 2. Mode for Carrying Out the Invention

[0024] Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The advantages and features of the present invention, as well as methods for achieving them, will become clearer with reference to the embodiments described in detail below, along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and can be realized in a variety of different forms, and these embodiments are provided merely to complete the disclosure of the present invention and to fully inform those who are ordinary skill in the art to which the present invention pertains, of the scope of the invention, and the present invention is defined solely by the scope of the claims. Throughout the specification, the same reference numerals refer to the same components.

[0025] The present invention can be modified in various ways and may have several embodiments; therefore, specific embodiments are illustrated in the drawings and described below.

[0026] However, this should be understood not as an attempt to limit the present invention to any particular embodiment, but rather as including all modifications, equivalents, and substitutions that fall within the spirit and technical scope of the present invention.

[0027] Terms that include ordinal numbers, such as "first" and "second," can be used to describe various components, but these components are not limited by those terms.

[0028] These terms are used solely for the purpose of distinguishing one component from another.

[0029] For example, without departing from the scope of the present invention, the second component may be named the first component, and similarly, the first component may be named the second component.

[0030] The term "and / or" includes a combination of multiple related listed items, or any one of multiple related listed items.

[0031] When it is stated that one component is “linked” or “connected” to another component, it should be understood that it may be directly linked or connected to the other component, but other components may exist in between.

[0032] On the other hand, when one component is described as being "directly connected" or "directly linked" to another component, it should be understood that there are no other components in between.

[0033] The terms used in this application are used solely to describe specific embodiments and are not intended to limit the invention.

[0034] A singular expression includes multiple expressions unless the context clearly indicates a different meaning.

[0035] In this application, terms such as “includes” or “having” are intended to specify the presence of features, numerical values, stages, operations, components, parts, or combinations thereof as described in the specification, and should not be understood as preemptively excluding the possibility of the presence or addition of one or more other features, numerical values, stages, operations, components, parts, or combinations thereof.

[0036] The embodiments will be described in detail below with reference to the attached drawings. Regardless of the reference numerals in the drawings, identical or corresponding components will be assigned the same reference numerals, and redundant explanations will be omitted.

[0037] Figure 1 is a perspective view showing a substrate processing apparatus according to an embodiment of the present invention, and Figure 2 is a cross-sectional view showing the substrate support portion in the substrate processing apparatus shown in Figure 1 in a state where it has moved to the process position.

[0038] Referring to Figures 1 and 2, the substrate processing apparatus 10 according to an embodiment of the present invention comprises a process chamber 100, a diffusion cover 200, a substrate support unit 300, a drive unit 400, a shower head 500, and a control unit 600.

[0039] The process chamber 100 provides a process processing space S1 for processing the substrate 700. The process chamber 100 may provide an outlet 120 for discharging waste products such as process gases or by-products that have flowed into it to the outside.

[0040] For example, the outlets 120 may be located on either side of a virtual horizontal line passing through the center of the process chamber 100 and formed to connect downwards via the side walls of the process chamber 100. Such outlets 120 can provide a transport path for exhaust gases and other emissions to be discharged. Thus, emissions transmitted downwards within the process chamber 100 can be discharged to the outside of the process chamber 100 through the outlets 120.

[0041] A substrate inlet / outlet 140 may be formed on one side of the process chamber 100 for the entry and exit of the substrate 700. The substrate 700 can be brought into the process chamber 100 or brought out to the outside of the process chamber 100 through the substrate inlet / outlet 140.

[0042] Although not shown in the drawings, the substrate entrance / exit 140 may be equipped with a shutter (not shown). The shutter can selectively open and close the substrate entrance / exit 140. When the shutter opens the substrate entrance / exit 140, the substrate 700 can be loaded into or unloaded through the substrate entrance / exit 140. When processing is performed on the substrate 700, the shutter can close the substrate entrance / exit 140 to isolate the inside of the process chamber 100 from the outside.

[0043] The diffusion cover 200 serves to seal the upper opening of the process chamber 100. For this purpose, the diffusion cover 200 may be positioned on top of the process chamber 100. The diffusion cover 200 may be positioned to be stacked on top of the shower head 500, which will be described later. By sealing the upper opening of the process chamber 100 with the diffusion cover 200, the outflow of process gas and the inflow of external substances through the upper opening of the process chamber 100 can be prevented.

[0044] The diffusion cover 200 includes a guide member 210 provided around the shower head 500 at its lower end, and a process gas inlet 220 positioned to penetrate the central region. The diffusion cover 200 may also include a diffusion plate 205 positioned below the process gas inlet 220. The diffusion plate 205 may be positioned between the process gas inlet 220 and the shower head 500. The lower surface of the diffusion plate 205 facing the shower head 500 may have a stepped structure to form a diffusion space S2, which will be described later.

[0045] The guide member 210 is provided in the form of a plate or a ring and can seal the upper opening of the process chamber 100. The guide member 210 can also be coupled to the lower surface of the diffusion plate 205 to form a diffusion space S2. The process gas inlet 220 can provide a transfer path for the process gas. A process gas inlet pipe 230 can be connected inside the process gas inlet 220.

[0046] The process gas inlet 220 is connected to the central region of the diffusion cover 200, and the process gas inlet pipe 230 can be connected to the process gas inlet 220. The process gas inlet pipe 230 can be connected directly or indirectly to a process gas tank (not shown). The process gas contained in the process gas tank is transported through the process gas inlet pipe 230, and the transported process gas can be transmitted to the process processing space S1 via the process gas inlet 220.

[0047] The substrate support portion 300 can support the substrate 700. The substrate support portion 300 may have a mounting surface on its upper part on which the substrate 700 can be stably placed. Processes can be performed on the substrate 700 which is stably placed on the mounting surface of the substrate support portion 300.

[0048] The substrate support portion 300 can heat the substrate 700. For this purpose, a heater (not shown) may be provided inside the substrate support portion 300. The heat emitted from the heater can be transferred to the substrate 700 via the body of the substrate support portion 300.

[0049] The substrate support portion 300 may include a grounded electrode (not shown). As will be described later, when RF power is supplied to the shower head 500, an electric field may be formed between the shower head 500 and the substrate support portion 300.

[0050] The substrate support portion 300 may be provided with a plurality of support pins (not shown). The support pins can support the substrate 700. Specifically, the support pins can support the substrate 700 such that the substrate 700 is separated from the mounting surface of the substrate support portion 300 by a certain distance.

[0051] The drive unit 400 can generate a driving force to move the substrate support unit 300. In this invention, the substrate support unit 300 can be moved vertically inside the process chamber 100 by the drive unit 400. Figure 2 shows the substrate support unit 300 positioned in the process processing space S1, which is the upper region of the process chamber 100.

[0052] Although not shown in the drawings, when the substrate 700 is brought into or out of the process chamber 100, the substrate support 300 can be stably placed on the bottom surface of the process chamber 100. Then, when a process is performed on the substrate 700, the substrate support 300 can move to an upper position inside the process chamber 100, as shown in Figure 2. Hereafter, the position of the substrate support 300 where a process is performed on the substrate 700 will be referred to as the process position.

[0053] When processing is performed on the substrate 700, it is preferable that the substrate 700 is stably placed on the mounting surface of the substrate support 300. By stably placing the substrate 700 on the mounting surface of the substrate support 300, the processing on the substrate 700 can be performed while preventing movement of the substrate 700.

[0054] On the other hand, when the substrate 700 is being transported into or out of the process chamber 100, it is preferable that the substrate 700 is separated from the mounting surface of the substrate support 300. A transport robot (not shown) that transports the substrate 700 can transport the substrate 700 by supporting its lower surface. In order for the transport robot's hand to approach the lower surface of the substrate 700, the substrate 700 needs to be separated by a certain distance from the mounting surface of the substrate support 300.

[0055] The showerhead 500 plays the role of injecting process gas onto the substrate 700 in the process processing space. The showerhead 500 may be positioned in the central region of the guide member 210 and may receive process gas from the process gas inlet 220. The showerhead 500 may be positioned at the top of the process chamber 100. The process gas injected from the showerhead 500 is sprayed downwards and reaches the substrate 700.

[0056] In this invention, the process gas may include a source gas and a reaction gas. The source gas and reaction gas may be sprayed sequentially. After being sprayed from the showerhead 500, the source gas and reaction gas may collide with each other and react. The source gas, activated by the reaction gas, may then come into contact with the substrate 700, and process treatment may be carried out on the substrate 700. For example, the activated source gas may be deposited on the substrate 700 as a thin film.

[0057] The showerhead 500 may receive RF power. For example, the top surface of the showerhead 500 may be provided with an electrode plate (not shown) that receives RF power. As mentioned above, the substrate support 300 may include grounded electrodes. When RF power is supplied to the electrode plate, an electric field may be formed between the electrode plate and the electrodes of the substrate support 300. The electric field formed by the supply of RF power converts the process gas flowing into the process chamber 100 into plasma particles, and these plasma particles may react with each other or with the surface of the substrate 700 to perform process processing on the substrate 700.

[0058] The shower head 500 may be equipped with injection holes (see Figure 3, 521) for injecting process gas. Multiple injection holes 521 may be formed in a shape corresponding to one side surface of the substrate 700.

[0059] A diffusion space S2 may be formed between the shower head 500 and the center of the diffusion cover 200. More specifically, a diffusion space S2 may be formed between the diffusion plate 205 and the shower head 500. The process gas flowing in through the process gas inlet 220 is diffused in the diffusion space S2 and then can be injected through a plurality of injection holes 521.

[0060] An edge ring 330 may be formed on the substrate support portion 300. The edge ring 330 may be arranged in a ring shape along the edge of the substrate support portion 300. The edge ring 330 may be arranged to correspond to a chamber ring 110 provided inside the process processing space S1. That is, the chamber ring 110 may be located at the process position and, with the substrate support portion 300 raised, may be arranged to surround the outside of the edge ring 330. At this time, process by-products such as process gases and reaction gases that have completed the process on the substrate may be guided by the chamber ring 110 and moved to the discharge port.

[0061] The control unit 600 can perform overall control over the substrate processing apparatus 10. For example, the control unit 600 can control the operation of the shutter to open and close the substrate entrance / exit 140, or control the drive unit 400 to move the substrate support unit 300. The control unit 600 can also control the injection of process gas through the shower head 500, or control the supply of RF power to the electrode plate of the shower head 500. At least some of the steps of the substrate processing method described later can be performed by the control unit 600.

[0062] A substrate processing apparatus 10 according to an embodiment of the present invention can deposit a thin film onto a substrate 700. The substrate processing apparatus 10 according to this embodiment can deposit a metal thin film onto the substrate 700. The source gas according to this embodiment may use a precursor containing at least one element from among silicon (Si), titanium (Ti), zirconium (Zr), aluminum (Al), titanium (Ti), tungsten (W), tantalum (Ta), ruthenium (Ru), and molybdenum (Mo). For example, the source gas may contain at least one from among titanium tetrachloride (TiCl4), silicon tetrachloride (SiCl4), and tantalum bromide (TaBr5). The reaction gas may use a precursor containing at least one element from among hydrogen (H), oxygen (O), and nitrogen (N). For example, the reaction gas may contain ammonia (NH3), hydrogen (H2), and argon (Ar). However, the embodiments are not limited thereto, and the source gas and reaction gas of the present invention are not limited thereto.

[0063] The aforementioned process chamber 100 can provide a process processing space S1 for depositing a thin film onto the substrate 700. Inside the process chamber 100, plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD) can be performed to deposit a thin film onto the substrate 700. Since the deposition process using plasma can be performed at relatively low temperatures, the physical properties of the thin film can be improved.

[0064] Figure 3 is an exploded perspective view showing the substrate processing apparatus shown in Figure 1, and Figure 4 is a cross-sectional view showing the process chamber of the substrate processing apparatus shown in Figure 3.

[0065] Referring to Figures 3 and 4, in the substrate processing apparatus according to the embodiment of the present invention, a process processing space S1 is formed inside the process chamber 100, and discharge ports may be formed on both sides centered on the process processing space S1. In this embodiment, an example is shown in which two discharge ports 120 are formed, but the position and number of discharge ports are not limited to this.

[0066] The outlets 120 may be arranged at equal intervals or angles apart from each other on a virtual horizontal line passing through the center of the process space S1. The outlets 120 may each have an inlet 121 formed horizontally, corresponding to the process position height of the substrate support 300, through which process by-products such as process gases and reaction gases flow in, and an outlet 122 formed vertically along the bottom surface of the process chamber 100, so that process by-products are transmitted downwards through the side walls and discharged to the bottom of the process chamber 100. Of course, the outlets 120 can also be designed so that both the inlet 121 and the outlet 122 face the same direction.

[0067] In this case, a ring-shaped buffer space 113 may be formed inside the process chamber 100, outside the chamber ring 110. The buffer space 113 is a region where exhausted process gas is collected and can also serve to guide the flow of process gas exhausted toward the inlet 121 of each outlet 120. Of course, the buffer space 113 can completely guide the process gas inside the buffer space 113 toward the inlet while absorbing the fact that the exhaust pressure of the process gas prevents the process gas from flowing toward the inlet 121 of the outlet 120 and transmits the exhaust pressure in a direction different from the inlet 121. The buffer space 113 has a predetermined height that corresponds to the exhaust direction of the process gas discharged between at least the guide member 210 and the edge ring 330, and one end face may be formed in a generally inverted L shape so as to surround the outer circumferential surface of the chamber ring 110 below.

[0068] The process space S1, based on Figure 2, may have a circular horizontal cross-section and a roughly rectangular vertical cross-section. Therefore, the process space S1 as a whole may be formed as a cylindrical space.

[0069] Furthermore, the substrate support portion 300 and the edge ring 330 can also have a substantially circular horizontal cross-section, corresponding to the shape of the process processing space S1. Of course, such a shape can correspond to the horizontal cross-sectional shape of the substrate 700 supplied into the process chamber 100 via the substrate inlet / outlet 140.

[0070] Furthermore, the shower head 500 is positioned to correspond to the central region of the guide member 210, and it is preferable that the diameter of the shower head 500 is smaller than the upper surface diameter of the substrate support portion 300 or the diameter of the substrate 700 placed on the substrate support portion 300. For example, the diameter of the substrate 700 relative to the shower head 500 may be in the range of approximately 50-80%.

[0071] Guide members 210 are arranged around the shower head 500, and as shown in Figure 2, it is preferable that the diameter of the guide members 210 is at least smaller than the diameter of the edge ring 330.

[0072] Furthermore, it is preferable that the diameter of the edge ring 330 be formed to be at least smaller than the diameter of the chamber ring 110.

[0073] In this case, the surfaces of the edge ring 330 and the chamber ring 110 that come into contact with each other may be formed with a structure in which stepped patterns interlock. Of course, a gap space G may be formed so that the surfaces of the edge ring 330 and the chamber ring 110 that face each other are separated from each other. The gap space G in which these surfaces face each other may be formed with a pattern of a shape other than a stepped pattern. In this way, purge gas is supplied to the gap space G in which the edge ring 330 and the chamber ring 110 face each other, in the direction of the upper process position from the lower part of the substrate support 300, so that process gas can be prevented from flowing into the lower part of the substrate support 300 through the gap space G.

[0074] Figure 5A is an exploded perspective view showing a partial configuration of the substrate processing apparatus shown in Figure 3, viewed from below; Figure 5B is a bottom view showing the bottom surface of the diffusion cover 200 shown in Figure 5A; and Figure 6 is a cross-sectional view showing the longitudinal section of the substrate processing apparatus shown in Figure 5.

[0075] Referring to Figures 5 and 6, the substrate processing apparatus 10 according to an embodiment of the present invention may include a center baffle 240 and side nozzles 250 on the bottom surface of the diffusion cover 200.

[0076] A diffusion space S2 is formed in the central region of the diffusion cover 200, and a center baffle 240 may be positioned at the bottom of the diffusion space S2. The center baffle 240 may have a plurality of injection holes 241 into which process gas can be injected in the direction of the shower head 500.

[0077] A first diffusion space (see Figure 7, S21) can be formed in the upper region of the center baffle 240 at the internal center of the diffusion cover 200.

[0078] The first diffusion space S21 allows process gas supplied to the process gas inlet 220 to flow in and, as it passes through the injection holes 241 of the center baffle 240, concentrate the process gas into the central region of the shower head 500.

[0079] Furthermore, a second diffusion space (see Figure 7, S22) may be formed in the region between the center baffle 240 and the shower head 500. Process gas injected from the center baffle 240 and process gas injected from the side nozzles 250 may be supplied to the second diffusion space S22 simultaneously.

[0080] Therefore, process gas injected from the center baffle 240 and process gas injected from the side nozzles 250 can be simultaneously injected into the shower head 500 while diffusing in the second diffusion space S22. That is, since the process gas is injected concentratedly toward the central region of the shower head 500, the process gas that has passed through the injection holes 501 of the shower head 500 can also be injected so as to be relatively concentrated toward the central region of the shower head.

[0081] Furthermore, a plurality of side nozzles 250 may be arranged around the diffusion space S2 at the center of the diffusion cover 200. The side nozzles 250 may receive a supply of process gas via a distribution line (not shown). The side nozzles 250 may be formed to be recessed from the front surface of the diffusion cover 200, and each side nozzle 250 may be provided with a valve 251 at its center that can adjust the opening or closing of the side nozzle 250 or adjust the degree of opening. The side nozzles 250 may be arranged at equal intervals or at equal angles from each other around the diffusion space S2 or the center baffle 240. The regions from which process gas is injected from the side nozzles 250 and the center baffle 240 may partially overlap in adjacent regions.

[0082] The guide member 210 is positioned to surround the shower head 500, and can guide the process gas that has passed through the shower head 500 to diffuse rapidly from the center to the edge region of the substrate 700. At this time, a process processing space S1 is formed in the region between the shower head 500 and the guide member 210 facing the substrate 700.

[0083] The diffusion cover 200 may include a first region A1 in which an inner inclined surface 211 is formed that slopes downward toward the outer casing from the tip of the bottom surface of the shower head 500, a second region 212 adjacent to the first region A1 consisting of a flat portion 212, and a third region A3 in which an outer inclined surface 213 is formed that slopes upward toward the outer casing from the second region 212. Of course, the first region A1 to the third region A3 can all be integrated to form the guide member 210. More specifically, the guide member 210 may include a first region A1 in which an inner inclined surface 211 is formed that slopes downward toward the outer casing from the tip of the bottom surface of the shower head 500, a second region 212 adjacent to the first region A1 consisting of a flat portion 212, and a third region A3 in which an outer inclined surface 213 is formed that slopes upward toward the outer casing from the second region 212. Of course, the first region A1 to the third region A3 can all be integrated to form the guide member 210.

[0084] The inner tip of the first region A1 may be positioned so as to partially overlap with the shower head 500, and the overlapping region may be the region in which the shower head 500 is connected to the guide member 210.

[0085] The inner inclined surface 211 of the first region A1 may be positioned to face the remaining outer region of the substrate 700, excluding the central region of the substrate that faces the shower head 500. Thus, the substrate 700 may be located within a region that includes the shower head 500 and the inner inclined surface 211.

[0086] Furthermore, the process gas sprayed from the showerhead 500 concentrates upon reaching the central region of the substrate, increasing in pressure. This pressure allows the process gas to rapidly diffuse into the inclined space between the first region A1 and the substrate 700 in the process processing space S1.

[0087] Therefore, the volume of the processing space S1 can be reduced by the inner inclined surface 211 of the first region A1, which has the advantage of reducing the amount of process gas consumed. Furthermore, the reduction in process gas consumption may also have the effect of reducing the inflow of foreign matter that may be contained in it. Of course, the supply pressure of the process gas will increase, allowing the process gas to move horizontally at high speed within the processing space S1, and the high pressure and high-speed flow can be expected to have the effect of smoothly supplying atoms to the depths of the element pattern on the substrate.

[0088] Here, the process processing space S1 can correspond to the process location.

[0089] Figure 7 is a magnified view of a portion of the substrate processing apparatus shown in Figure 2, showing an enlarged view of the area around the diffusion space.

[0090] Figure 7 shows the shape, length, angle, position, and arrangement relationship of the guide member 210 between the substrate support portion 300 and the diffusion cover 200.

[0091] Referring to Figure 7, the guide member 210 may have its outer end of the inner inclined surface 211 positioned outside the outer edge of the substrate 700. That is, the entire area of ​​the substrate 700 may be positioned within the first region A1 on which the inner inclined surface 211 is formed.

[0092] With this structure, the process gas sprayed from the showerhead 500 in the processing space S1 is first rapidly injected at high pressure into the central region of the substrate, and then the inner inclined surface 211 guides the flow of process gas horizontally toward the outer edge. Furthermore, the inner inclined surface 211 is positioned so that it gradually approaches the substrate toward the outer edge. As a result, the process gas can cover the entire area of ​​the substrate 700, not only the central region but also the outer region, while providing a uniform gas distribution and pressure.

[0093] For example, the inner inclined surface 211 can also function as a reflector, reflecting the flow direction of the process gas towards the substrate while the process gas sprayed from the showerhead 500 flows horizontally, and the distance between the surface and the substrate decreases. In addition, the diameter of the inner inclined surface 211 to its outer tip can be made larger than the diameter of the substrate 700 by approximately 5-20%.

[0094] Furthermore, the outer inclined surface 213 may be formed to have an upward inclination, unlike the downward inclination of the inner inclined surface 211. In this case, the distance between the outer inclined surface 213 and the edge inclined surface 331 formed on the inner upper part of the edge ring 330 may be kept constant, or the distance may be formed to widen further toward the outside. For example, the angle that the outer inclined surface 213 makes with the substrate 700 may be the same as the angle that the inclined surface 331 of the edge ring makes with the substrate 700, or it may be formed to be relatively larger as a result.

[0095] In this case, the first gap G1 between the outer inclined surface 213 and the edge ring 330 may be formed to be relatively larger than the second gap G2 between the flat portion 212 and the upper surface of the substrate support portion 300. When the first gap G1 is formed to be larger than the second gap G2 in this way, the pressure of the process gas passing through the second gap G2 inside the process processing space S1 increases, and although the pressure decreases when it passes through the first gap G1, the flow rate may increase, thus enabling smooth exhaust toward the outlet.

[0096] Of course, the first inclination angle θ1 formed by the inner inclined surface 211 with respect to the substrate 700 is smaller than the second inclination angle θ2 formed by the outer inclined surface 213 with respect to the substrate 700. Since the first inclination angle θ1 can induce a relatively gentle volume change, it is possible to minimize the formation of vortices. Such advantages can contribute to smoother process gas flow towards the outlet 120 and to providing a uniform exhaust pressure.

[0097] For example, the second inclination angle θ2 can be formed to be approximately 3 to 12 times larger than the first inclination angle θ1. More specifically, it is preferable that the second inclination angle θ2 be formed to be approximately 5 to 10 times larger than the first inclination angle θ1 for the effects described above.

[0098] In Figure 7, "L1" represents the first length from the outer tip of the substrate 700 to the outer tip of the inner inclined surface 211, "L2" represents the second length from the outer tip of the flat portion 212 to the inner tip of the edge ring 330, and "L3" represents the third length from the inner tip of the edge ring 330 to the outer tip of the edge inclined surface 331. "D1" represents the fourth length, which is the length from the outer tip of the inner inclined surface 211 to the inner tip of the outer inclined surface 213. Here, the fourth length represents the horizontal length of the flat portion 212.

[0099] In this case, it is preferable that the fourth length D1 is formed to be longer than each of the first lengths L1 to the third length L3. If the fourth length D1 is too short, the residence time of the process gas decreases, and if it is too long, the residence time of the process gas increases. That is, if the residence time of the process gas is outside the set range and is inappropriate, in a deposition process using a shower head 500 smaller than the substrate 700, the residence time of the process gas may be insufficient or excessive in the edge region of the substrate 700, which may reduce the uniformity of the thin film deposition thickness. Therefore, it is preferable that the range of the fourth length D1 is formed to be longer than each of the first lengths L1 to the third length L3.

[0100] For example, the fourth length D1 may be equal to or greater than the sum of the second length L2 and the third length L3.

[0101] Furthermore, the inclined surface 201, which slopes upward from the outer tip of the outer inclined surface 213 to the lowest outer tip of the diffusion cover 200, may be formed with a third inclination angle θ3 with respect to the substrate 700. In this case, the second inclination angle θ2 formed by the outer inclined surface 213 may be formed to be at least the same angle as the third inclination angle θ3, or smaller than the third inclination angle θ3. That is, by forming the third inclination angle θ3 to be the same as or larger than the second inclination angle θ2, smoother exhaust characteristics can be provided.

[0102] Figure 9 is a reference diagram showing another embodiment of the diffusion cover for the substrate processing apparatus shown in Figure 2.

[0103] Referring to Figure 9, in another embodiment relating to the diffusion cover of the substrate processing apparatus, it can be applied as a diffusion plate 206 having a structure in which the guide member (210, see Figure 2) and the diffusion plate (205, see Figure 2) described above are integrally combined.

[0104] Thus, when an integrated diffusion plate 206 is applied, the bottom surface of the diffusion plate 206 may have an inner inclined surface that slopes downward toward the outer casing of the shower head 500, so that it gradually approaches the substrate 700 from the outer casing. Of course, the outer end of the inner inclined surface 211 of the diffusion plate 206 may be positioned outside the substrate 700.

[0105] Therefore, by integrally forming the inner inclined surface 211 on the diffusion plate 206, the interface between the guide member 210 and the diffusion plate 205 in the above-described embodiment can be omitted, preventing gas from entering the interface and thereby preventing the generation and accumulation of particles.

[0106] Furthermore, by integrating the diffusion plate 206, the thermal management characteristics can be improved compared to the structure of the above-described embodiment, which is divided into two parts. In other words, while deviations in heat conduction occurred in the separated configuration, by configuring the diffusion plate 206 as a single integrated structure, there is an advantage in that the temperature of the components can be effectively managed by the heat conducted from components such as heaters, and furthermore, the reduction in the number of parts can be expected to make maintenance easier.

[0107] Therefore, according to the substrate processing apparatus of the present invention, the uniformity of process gas deposition can be improved by increasing the pressure of the process gas between the shower head and the substrate and reducing its volume, the amount of supplied gas consumed can be reduced, and the inflow of foreign matter can be minimized, the reaction time of the gas on the substrate can be increased by improving the shape of the guide member, the exhaust speed can be improved by improving the environment for exhausting the increased pressure in the diffusion space, the process time can be shortened, and the interface between the diffusion plate and the guide member can be eliminated by improving the integration of the two, preventing gas from entering the interface and improving thermal management characteristics.

[0108] Although the technical concept of the present invention has been illustrated and explained above with reference to specific embodiments, the present invention is not limited to the same configuration and operation as the specific embodiments described above, and various modifications can be made without departing from the scope of the present invention. Therefore, such modifications should also be considered to fall within the scope of the present invention, and the scope of the present invention must be determined by the claims described later. [Explanation of symbols]

[0109] 10: Substrate processing equipment 100: Process Chamber 120: Outlet 140: Circuit board entrance / exit 200: Diffusion Cover 210: Guide member 300: Circuit board support section 330: Edge Ring 400: Drive unit 500: Shower head 600: Control Unit 700: Circuit board

Claims

1. A process chamber in which a process processing space is formed inside, A diffusion cover that provides a diffusion space for the process gas supplied to the process chamber, A shower head coupled to the diffusion cover and spraying process gas in the diffusion space, The process chamber includes a substrate support unit that raises and lowers the substrate inside the process chamber, The aforementioned diffusion cover is A guide member is positioned around the shower head on the diffusion cover and diffuses the process gas from the center of the substrate outward. The guide member includes a diffusion plate, A substrate processing apparatus comprising a guide member including an inner inclined surface that slopes downward so as to gradually approach the substrate from the outer casing of the shower head, and the outer end of the inner inclined surface being positioned outside the outer casing of the substrate.

2. The guide member is A planar portion extending outward parallel to the substrate or substrate support portion from the outer end of the inner inclined surface, The substrate processing apparatus according to claim 1, further comprising an outer inclined surface that is inclined upward from the outer end of the flat portion so as to gradually move away from the substrate support portion toward the outside.

3. The aforementioned planar portion is, The substrate processing apparatus according to claim 2, wherein the heater provided at the tip of the substrate or inside the substrate support portion is arranged to overlap with at least a portion of it.

4. The substrate processing apparatus according to claim 2, wherein the first inclination angle formed on the inner inclined surface with respect to the substrate is smaller than the second inclination angle formed on the outer inclined surface with respect to the substrate.

5. The length of the aforementioned planar portion is, The substrate processing apparatus according to claim 2, wherein the length is formed to be longer than a first length from the outer tip of the substrate to the outer tip of the inner inclined surface, or a second length from the outer tip of the flat portion to the inner tip of the edge ring disposed in the edge region of the substrate support portion, or a third length from the inner tip of the edge ring to the outer tip of the edge inclined surface formed outward.

6. The substrate processing apparatus according to claim 5, wherein the distance between the outer inclined surface and the edge inclined surface is formed to be at least the same as, or greater than, the distance between the flat portion and the substrate, or the distance between the flat portion and the upper surface of the substrate support portion.

7. The substrate processing apparatus according to claim 5, wherein the distance between the outer inclined surface and the edge inclined surface is constant or is formed to increase toward the outward direction.

8. The second inclination angle is, The substrate processing apparatus according to claim 4, wherein the inclined surface that slopes upward from the outer tip of the outer inclined surface to the lowest tip of the diffusion cover is formed to be at least the same as, or smaller than, the third inclination angle formed with respect to the substrate.

9. The substrate processing apparatus according to claim 1, wherein the shower head is formed to have a diameter smaller than that of the substrate.

10. The substrate processing apparatus according to claim 1, wherein the guide member and the diffusion plate are integrally formed.

11. A process chamber in which a processing space for the substrate is formed inside, The process chamber includes a diffusion cover positioned to cover the top of the process chamber and providing a diffusion space for the supplied process gas, The diffusion cover includes a first region having an inner inclined surface that slopes downward from the outer bottom surface of the shower head so as to gradually approach the substrate, a second region having a flat portion that extends outward parallel to the substrate from the outer end of the first region, and a third region having an outer inclined surface that slopes upward outward from the outer end of the second region. A substrate processing apparatus in which the outer end of the aforementioned inner inclined surface is positioned outside the outer casing of the substrate.

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