Hazardous gas treatment equipment and its operation method

Abstract

According to the present invention, equipment is provided for a semiconductor manufacturing facility comprising a semiconductor process chamber, a foreline exhaust pipe extending from the semiconductor process chamber, a vacuum pump for discharging gas from the semiconductor process chamber through the foreline exhaust pipe, and a pump exhaust pipe through which the gas discharged from the vacuum pump flows, for treating harmful components contained in the gas, the equipment includes: a vacuum plasma reactor provided on the foreline exhaust pipe for plasma treatment of the gas by generating a plasma reaction with respect to the gas discharged from the semiconductor process chamber; a power supply device for supplying power to the vacuum plasma reactor; and a wet scrubber connected to the pump exhaust pipe for wet treatment of the entire gas discharged from the vacuum pump.

Description

Technical Field

[0001] The present invention relates to gas processing technology, and more particularly, to an apparatus for processing harmful gas discharged from a semiconductor process chamber and an operating method thereof.

Background Art

[0002] Korean Registered Patent No. 10-2378727, which is a patent document related to the technical field of the present invention, discloses a scrubber system comprising: a combustion unit that combusts waste gas discharged from a semiconductor process chamber by a vacuum pump; a water tank storing a dissolving solution that contacts combustion gas discharged from the combustion unit to collect water-soluble dissolved gas and impurity particles contained in the combustion gas; and a wet tower that injects the dissolving solution into the combustion gas discharged from the water tank. Since such a conventional scrubber system must be operated 24 hours a day, fuel must be continuously supplied for the operation of the combustion unit, which involves the risk of explosion due to fuel use.

Summary of the Invention

Problem to be Solved by the Invention

[0003] An object of the present invention is to provide a harmful gas processing apparatus that efficiently and safely removes harmful components contained in gas discharged from a semiconductor process chamber, and an operating method thereof.

Means for Solving the Problem

[0004] To achieve the object of the present invention, according to one aspect of the present invention, equipment is provided for a semiconductor manufacturing facility comprising a semiconductor process chamber, a foreline exhaust pipe extending from the semiconductor process chamber, a vacuum pump for discharging gas from the semiconductor process chamber through the foreline exhaust pipe, and a pump exhaust pipe through which the gas discharged from the vacuum pump flows, for processing harmful components contained in the gas, the equipment comprising: a vacuum plasma reactor provided on the foreline exhaust pipe for plasma processing the gas by generating a plasma reaction with respect to the gas discharged from the semiconductor process chamber; a power supply device for supplying power to the vacuum plasma reactor; and a wet scrubber connected to the pump exhaust pipe for wet processing of the entire gas discharged from the vacuum pump.

[0005] To achieve the object of the present invention, according to another aspect of the present invention, a method for operating a hazardous gas treatment system provided in a semiconductor manufacturing facility, comprising: a semiconductor process chamber; a foreline exhaust pipe extending from the semiconductor process chamber; a vacuum pump for discharging gas from the semiconductor process chamber through the foreline exhaust pipe; and a pump exhaust pipe through which the gas discharged from the vacuum pump flows, for treating hazardous components contained in the gas, wherein the hazardous gas treatment system comprises: a vacuum plasma reactor provided on the foreline exhaust pipe; a control unit that controls the operation of a power supply device that supplies power to the vacuum plasma reactor and adjusts the power supplied to the vacuum plasma reactor; and a connection to the pump exhaust pipe. A method for operating a hazardous gas treatment system is provided, comprising: a wet scrubber that processes the entire gas discharged from the vacuum pump in a wet manner; and a gas measuring unit that measures the state of the gas flowing in the section between the upstream of the vacuum plasma reactor and the downstream of the wet scrubber and collects gas information; a gas state confirmation step in which the gas information is confirmed by the control unit; a gas reference state setting step in which the gas reference state is set by the control unit; a gas state comparison step in which the gas information and the gas reference state are compared by the control unit; and a power control step in which the power supplied to the vacuum plasma reactor is controlled by the control unit based on the result of the comparison between the gas information and the gas reference state. [Effects of the Invention]

[0006] According to the present invention, all of the aforementioned objectives of the present invention can be achieved. Specifically, instead of a conventional 24-hour operating combustion unit, a vacuum plasma reactor is used that is installed in the foreline exhaust pipe and only operates when the gas to be treated flows in. This eliminates the need for fuel supply or reduces fuel consumption in existing equipment, thus improving energy efficiency and safety. [Brief explanation of the drawing]

[0007] [Figure 1] This is a block diagram showing a schematic configuration of a semiconductor manufacturing facility equipped with a hazardous gas treatment system according to one embodiment of the present invention.

[0008] [Figure 2] Figure 1 is a block diagram of the inflow gas measurement unit provided in the hazardous gas treatment equipment shown.

[0009] [Figure 3] Figure 1 is a block diagram of the exhaust gas measurement unit included in the hazardous gas treatment equipment shown.

[0010] [Figure 4] This flowchart outlines the operation method of a hazardous gas treatment system according to one embodiment of the present invention. [Modes for carrying out the invention]

[0011] The configuration and operation of embodiments of the present invention will be described in detail below with reference to the drawings.

[0012] Figure 1 shows a schematic block diagram of a semiconductor manufacturing facility equipped with a hazardous gas treatment system according to one embodiment of the present invention. Referring to Figure 1, the semiconductor manufacturing facility equipped with the hazardous gas treatment system 100 according to one embodiment of the present invention includes a semiconductor process chamber (C) that performs a semiconductor manufacturing process using various process gases, a foreline exhaust pipe (F) extending from the semiconductor process chamber (C) through which the gas discharged from the semiconductor process chamber (C) flows, a vacuum pump (P) provided at the end of the foreline exhaust pipe (F) to create negative pressure in the foreline exhaust pipe (F) to discharge the gas from the semiconductor process chamber (C), and a pump exhaust pipe (E) extending from the vacuum pump (P) through which the gas discharged from the vacuum pump (P) flows. Hazardous components contained in the gas during the process of gas discharge from the semiconductor process chamber (C) are treated by the hazardous gas treatment system 100.

[0013] The semiconductor process chamber (C) includes all forms of semiconductor process chambers commonly used in the semiconductor manufacturing equipment technology field to manufacture semiconductor devices. The gases in the semiconductor process chamber (C) are discharged by a vacuum pump (P) along a foreline exhaust pipe (F) and a pump exhaust pipe (E).

[0014] The foreline exhaust pipe (F) extends from the semiconductor process chamber (C) and provides a passage for gas to be discharged from the semiconductor process chamber (C). The gas flowing through the foreline exhaust pipe (F) flows into the vacuum pump (P).

[0015] The vacuum pump (P) creates negative pressure on the semiconductor process chamber (C) side through the foreline exhaust pipe (F) to discharge gas from the semiconductor process chamber (C). Gas discharged from the process chamber (C) through the foreline exhaust pipe (F) flows into the vacuum pump (P), and gas is discharged from the vacuum pump (P) through the pump exhaust pipe (E). The vacuum pump (P) includes any form of vacuum pump commonly used for gas discharge in the semiconductor manufacturing equipment technology field. The vacuum pump (C) may be a rated operation vacuum pump that operates at its rated capacity, or a variable operation vacuum pump whose operating capacity can be adjusted. If the vacuum pump (P) is a variable operation pump, information on the operating capacity of the vacuum pump (P) in operation is transmitted to the control unit 190. The vacuum pump (P) is supplied with a purge gas. In this embodiment, the purge gas is described as nitrogen (N2) gas.

[0016] The pump exhaust pipe (E) extends from the vacuum pump (P) and provides a passage for the gas discharged from the vacuum pump (P). Hot nitrogen (Hot N2) gas flows into the upstream end of the pump exhaust pipe (E) and flows along the pump exhaust pipe (E).

[0017] A hazardous gas treatment system 100 according to one embodiment of the present invention includes a vacuum plasma reactor 110 installed on a foreline exhaust pipe (F), a power supply unit 140 that supplies power to the vacuum plasma reactor 110, a wet scrubber 150 directly connected to the end of a pump exhaust pipe (E), an inflow gas measuring unit 160 that measures the state of the scrubber inflow gas flowing into the wet scrubber 150 and collects information on the scrubber inflow gas, an exhaust gas measuring unit 170 that measures the state of the scrubber exhaust gas discharged from the wet scrubber 150 and collects information on the scrubber exhaust gas, a flow control valve 180 that adjusts the flow rate of high-temperature nitrogen gas supplied to the pump exhaust pipe (E), and a control unit 190 that controls the operation of the hazardous gas treatment system 100 using information on the scrubber inflow gas collected by the inflow gas measuring unit 160, information on the scrubber exhaust gas collected by the exhaust gas measuring unit 170, and operating information of the vacuum pump (P).

[0018] The vacuum plasma reactor 110 is located on the foreline exhaust pipe (F) and generates a plasma reaction with respect to the gas discharged from the semiconductor process chamber (C) to perform plasma treatment on the gas. In this invention, the vacuum plasma reactor 110 includes any type of plasma reactor that generates a plasma reaction. For example, the vacuum plasma reactor 110 may be an ICP reactor using inductively coupled plasma (ICP) or a CCP reactor using capacitively coupled plasma (CCP). The vacuum plasma reactor 110 operates by receiving power from the power supply unit 140. The plasma treatment capacity of the gas in the vacuum plasma reactor 110 increases approximately in proportion to the power supplied from the power supply unit 140.

[0019] The power supply unit 140 supplies power to the vacuum plasma reactor 110 to operate it. The operation of the power supply unit 140 is controlled by the control unit 190, which adjusts the power supplied to the vacuum plasma reactor 110.

[0020] The wet scrubber 150 processes and discharges the gas flowing in through the pump exhaust pipe (E) using only a wet method. The wet scrubber 150 does not use any other method besides the wet method. That is, the wet scrubber 150 does not use combustion by fuel supply, heating by heaters, plasma reactors, etc., and performs scrubbing only with water. The downstream end of the pump exhaust pipe (E) is directly connected to the intake port of the wet scrubber 150.

[0021] The inflow gas measuring unit 160 measures the state of the scrubber inflow gas flowing into the wet scrubber 150 and collects information on the scrubber inflow gas. Referring to Figure 2, the inflow gas measuring unit 160 includes an inflow gas pressure sensor 161 for measuring the pressure of the inflow gas, an inflow gas temperature sensor 163 for measuring the temperature of the inflow gas, and an inflow gas component analyzer 165 for analyzing the components of the inflow gas. That is, the information on the scrubber inflow gas collected by the inflow gas measuring unit 160 includes information on the pressure, temperature, components, and concentration of the inflow gas. The information on the scrubber inflow gas collected by the inflow gas measuring unit 160 is transmitted to the control unit 190 and used to control the hazardous gas treatment equipment 100. Only one or some of the sensors are used in the inflow gas measuring unit 160 to measure the state of the scrubber inflow gas.

[0022] The exhaust gas measuring unit 170 measures the state of the scrubber exhaust gas discharged from the wet scrubber 150 and collects information on the scrubber exhaust gas. Referring to Figure 3, the exhaust gas measuring device 170 includes an exhaust gas flow rate sensor 171 for measuring the flow rate of the exhaust gas and an exhaust gas pressure sensor 173 for measuring the pressure of the exhaust gas. That is, the information on the scrubber exhaust gas collected by the exhaust gas measuring unit 170 includes information on the flow rate and pressure of the exhaust gas. The information on the scrubber exhaust gas collected by the exhaust gas measuring unit 170 is transmitted to the control unit 190 and used to control the hazardous gas treatment equipment 100. The information on the scrubber exhaust gas collected by the exhaust gas measuring unit 170 may include both the flow rate and pressure information of the exhaust gas, or it may include only one of the flow rate and pressure information of the exhaust gas.

[0023] The flow control valve 180 regulates the flow rate of high-temperature nitrogen gas supplied to the pump exhaust pipe (E). The operation of the flow control valve 180 is controlled by the control unit 190.

[0024] The control unit 190 controls the operation of the harmful gas treatment equipment 100 by using information of scrubber inflow gas collected by the inflow gas measurement unit 160, information of scrubber exhaust gas collected by the exhaust gas measurement unit 170, and operation information of the vacuum pump (P). The operation of the control unit 190 will be described in detail with reference to the harmful gas treatment method shown in FIG. 4.

[0025] FIG. 4 is a flowchart showing a harmful gas treatment method according to an embodiment of the present invention. The harmful gas treatment method shown in FIG. 4 uses the harmful gas treatment equipment 100 described with reference to FIG. 1. Referring to FIG. 4 together with FIG. 1, the method comprises: a to-be-treated gas confirmation step (step S102) of confirming whether a to-be-treated gas flows in; a power supply step (step S104) of supplying power to the vacuum plasma reactor 110; a power cut-off step (step S106) of cutting off power supplied to the vacuum plasma reactor 110; an inflow gas pressure P that is a pressure of inflow gas flowing into the wet scrubber 150 IN ) an inflow gas state confirmation step (step S110) of confirming; an operation capacity confirmation step (step S120) of confirming the operation capacity of the vacuum pump (P); an inflow gas reference pressure P SET_IN ) an inflow gas reference pressure setting step (step S130) of setting; an exhaust gas pressure P that is a pressure of exhaust gas discharged from the wet scrubber 150 OUT ) an exhaust gas state confirmation step (step S140) of confirming; an exhaust gas reference pressure P SET_OuT ) an exhaust gas reference state setting step (step S145) of setting; an inflow gas pressure P IN ) and an inflow gas reference pressure P SET_IN ) an inflow gas pressure comparison step (step S150) of comparing; as a result of the inflow gas pressure comparison step (step S150), the inflow gas pressure P IN ) is compared with the inflow gas reference pressure P SET_IN ) a supplied power holding step (step S154) of holding power supplied to the vacuum plasma reactor 110 when it is confirmed that the inflow gas pressure is equal to or lower than the inflow gas reference pressure; as a result of the inflow gas pressure comparison step (step S150), the inflow gas pressure P IN ) exceeds the inflow gas reference pressure P SET_INIf it is confirmed to be greater than ), the power supply to the vacuum plasma reactor 110 is increased in a power supply increase step (step S158), and the exhaust gas pressure (P) confirmed in the exhaust gas condition confirmation step (step S140) OUT ) and the exhaust gas standard pressure (P) set in the exhaust gas standard state setting stage (step S145). SET_OUT The exhaust gas state comparison stage (step S160) is compared with the exhaust gas pressure (P OUT ) is the exhaust gas standard pressure (P SET_OuT If it is confirmed that the exhaust gas pressure (P) is greater than the following, the nitrogen flow rate holding stage (step S164) is held, and the exhaust gas pressure (P) is held as a result of the exhaust gas state comparison stage (step S160). OUT ) is the exhaust gas standard pressure (P SET_OuT If it is confirmed that the exhaust gas pressure (P) is below the specified value, the nitrogen flow rate increase step (step S168) increases the flow rate of high-temperature nitrogen gas supplied to the pump exhaust pipe (E), and the exhaust gas pressure (P) is determined as a result of the exhaust gas state comparison step (step S160). OUT ) is the exhaust gas standard pressure (P SET_OuT If it is confirmed to be below ) then the inflow gas reference pressure (P SET_IN This includes a step (step S170) in which the inflow gas reference pressure is reset.

[0026] In the gas inflow confirmation stage (step S102), it is confirmed whether or not the gas to be treated is flowing into the hazardous gas treatment equipment 100. The gas inflow confirmation stage (step S102) is performed by the control unit 130 confirming the flow of the gas to be treated into the vacuum plasma reactor 110. If the gas to be treated is confirmed to be flowing into the hazardous gas treatment equipment 100 in the gas inflow confirmation stage (step S102), the power supply stage (step S104) is performed. If it is confirmed in the gas inflow confirmation stage (step S102) that the gas to be treated is not flowing into the hazardous gas treatment equipment 100, the power cutoff stage (step S106) is performed.

[0027] In the power supply stage (step S104), power is supplied to the vacuum plasma reactor 110. The power supply stage (step S104) is performed when the inflow of the gas to be treated into the hazardous gas treatment equipment 100 is confirmed in the gas inflow confirmation stage (step S102). The power supply stage (step S104) is performed by the control unit 190 controlling the operation of the power supply device 140 that supplies power to the vacuum plasma reactor 110. The power supplied to the vacuum plasma reactor 110 through the power supply stage (step S104) is regulated by the control unit 190.

[0028] In the power cutoff stage (step S106), the power supplied to the vacuum plasma reactor 110 is cut off. The power cutoff stage (step S106) is performed when it is confirmed in the gas inflow confirmation stage (step S102) that no gas to be treated is flowing into the hazardous gas treatment equipment 100. The power cutoff stage (step S106) is performed by the control unit 190 controlling the operation of the power supply device 140 that supplies power to the vacuum plasma reactor 110. Since the vacuum plasma reactor 110 operates only when the gas to be treated is flowing into the hazardous gas treatment equipment 100 through the power supply stage (step S104) and the power cutoff stage (step S106), energy efficiency is improved.

[0029] If the vacuum plasma reactor 110 is supplied with power exceeding the set value through the power supply stage (step S104), no powder will be generated in the vacuum plasma reactor 110, or only a very small amount of powder will be generated, so almost no powder will settle in the pump exhaust pipe (E). However, if there is powder accumulation in the pump exhaust pipe (E) due to long-term use, or if there are changes in the amount and composition of the gas flowing into the hazardous gas treatment equipment 100, the amount of powder generated will increase. In this case, if powder accumulates in the pump exhaust pipe (E), the pressure in the pump exhaust pipe (E) will increase. This means that the pressure of the scrubber inflow gas measured by the inflow gas measuring unit 160 will increase.

[0030] In the inflow gas condition confirmation stage (step S110), the inflow gas pressure (P) is the pressure of the inflow gas flowing into the wet scrubber 150.IN ) is confirmed. The inflow gas state confirmation step (step S110) is when the control unit 190 checks the inflow gas pressure (P) measured by the inflow gas measuring unit 160. IN This is done by checking the inflow gas pressure (P IN The exhaust pressure measured from the vacuum pump (P) can also be used, and this also falls within the scope of the present invention.

[0031] In the operating capacity confirmation stage (step S120), the operating capacity of the vacuum pump (P) is confirmed. The operating capacity confirmation stage (step S120) is performed when the vacuum pump (P) is a variable-operation vacuum pump whose operating capacity can be adjusted. The operating capacity confirmation stage (step S120) is performed by the control unit 190 confirming the operating capacity of the vacuum pump (P) that is in operation. If the vacuum pump (P) is a vacuum pump operating at its rated capacity, the operating capacity confirmation stage (step S120) is omitted.

[0032] In the inflow gas reference pressure setting stage (step S130), the inflow gas reference pressure (P SET_IN ) is set. If the vacuum pump (P) is a variable operation vacuum pump, the inlet gas reference pressure setting step (step S130) is set by the control unit 190 to set the inlet gas reference pressure (P) corresponding to the operating capacity of the vacuum pump (P) that is in operation, which has been confirmed through the operating capacity confirmation step (step S120). SET_IN This is done by setting the reference pressure of the inlet gas (P). In other words, if the vacuum pump (P) is a variable-operation vacuum pump, the reference pressure of the inlet gas (P SET_IN ) can be set differently to a corresponding value depending on the operating capacity of the vacuum pump (P) that is in operation. When the vacuum pump (P) is a rated operating vacuum pump, the inflow gas reference pressure setting step (step S130) is performed by the control unit 190 setting a fixed inflow gas reference pressure (P SET_IN This is done by setting ).

[0033] In the exhaust gas condition confirmation stage (step S140), the exhaust gas pressure (P) is the pressure of the exhaust gas discharged from the wet scrubber 150. OUT) is confirmed. In the exhaust gas condition confirmation stage (step S140), the control unit 190 checks the exhaust gas pressure (P) measured by the exhaust gas measuring unit 170. OUT This is done by checking the exhaust gas condition (M OUT This may also be done by confirming ), and this also falls within the scope of the present invention.

[0034] In the exhaust gas standard state setting stage (step S145), the exhaust gas standard pressure (P SET_OuT The exhaust gas standard state setting stage (step S145) is set by the control unit 190 setting the exhaust gas standard pressure (P SET_OuT This is done by setting the exhaust gas standard flow rate (M SET_OuT This can also be done by setting ), and this also falls within the scope of the present invention.

[0035] In the inflow gas pressure comparison stage (step S150), the inflow gas pressure (P IN ) and the reference pressure of the inflow gas (P SET_IN ) is compared. The inflow gas input comparison step (step S150) is when the control unit 190 checks the inflow gas pressure (P IN ) and the reference pressure of the inflow gas (P SET_IN This is done by comparing it with the inflow gas input. In the inflow gas input comparison stage (step S150), the inflow gas pressure (P IN ) is the inflow gas reference pressure (P SET_IN If it is confirmed that the inflow gas pressure (P) is below this level, the power supply holding stage (step S154) is performed. IN ) is the inflow gas reference pressure (P SET_IN If the value is below the standard value, the amount of powder deposited in the pump exhaust pipe (E) is interpreted as being below the standard value. In the inflow gas input comparison stage (step S150), the inflow gas pressure (P IN ) is the inflow gas reference pressure (P SET_IN If it is confirmed to be greater than ), the power supply increase stage (step S158) is performed. IN) is the inflow gas reference pressure (P SET_IN If the value is greater than ), it is interpreted that the amount of powder deposited in the pump exhaust pipe (E) exceeds the standard value.

[0036] In the power supply holding stage (step S154), the power supplied to the vacuum plasma reactor 110 is maintained without change. The power supply holding stage (step S154) is determined as a result of the inflow gas pressure comparison stage (step S150) IN ) is the inflow gas reference pressure (P SET_IN This is performed when it is confirmed that the value is less than or equal to the specified value. The power supply holding stage (step S154) is performed by the control unit 190 controlling the operation of the power supply unit 140 so that the power supplied to the vacuum plasma reactor 110 is maintained without change.

[0037] In the power supply increase stage (step S158), the power supplied to the vacuum plasma reactor 110 is increased. The power supply increase stage (step S158) is performed as a result of the inflow gas pressure comparison stage (step S150) IN ) is the inflow gas reference pressure (P SET_IN This is performed when it is confirmed to be greater than ). The power supply increase step (step S158) is performed by the control unit 190 controlling the operation of the power supply unit 140 so that the power supplied to the vacuum plasma reactor 110 increases. By increasing the power supplied to the vacuum plasma reactor 110 through the power supply increase step (step S158), powder formation is prevented.

[0038] In the exhaust gas state comparison stage (step S160), the exhaust gas pressure (P OUT ) and exhaust gas standard pressure (P SET_OUT ) is compared with. In the exhaust gas state comparison stage (step S160), the control unit 190 checks the exhaust gas pressure (P OUT ) and exhaust gas standard pressure (P SET_OUT This is done by comparing it with the exhaust gas pressure (P) in the exhaust gas state comparison stage (step S160). OUT ) is the exhaust gas standard pressure (P SET_OuTIf it is confirmed to be greater than ), the nitrogen flow rate holding stage (step S164) is performed. In the exhaust gas state comparison stage (step S160), the exhaust gas pressure (P OUT ) is the exhaust gas standard pressure (P SET_OuT If it is confirmed that the value is below (P), the nitrogen flow rate increase step (step S168) is performed. In this embodiment, in the exhaust gas state comparison step (step S160), the exhaust gas pressure (P OUT ) and exhaust gas standard pressure (P SET_OUT It is explained that this is compared to the exhaust gas flow rate (M) confirmed in the exhaust gas condition confirmation stage (step S140). OUT ) and the exhaust gas standard flow rate (M) set in the exhaust gas standard state setting stage (step S145). SET_OuT ) may also be compared with this, and this also falls within the scope of the present invention. If exhaust gas flow rate (M OUT ) is the exhaust gas standard flow rate (M SET_OuT If it is confirmed to be greater than ), the nitrogen flow rate holding stage (step S164) is performed, and the exhaust gas flow rate (M OUT ) is the exhaust gas standard flow rate (M SET_OuT If it is confirmed that the value is below this level, the nitrogen flow rate increase step (step S168) is performed.

[0039] In the nitrogen flow rate maintenance stage (step S164), the flow rate of high-temperature nitrogen gas supplied to the pump exhaust pipe (E) is maintained without change. In the nitrogen flow rate maintenance stage (step S164), the exhaust gas pressure (P OUT ) is the exhaust gas standard pressure (P SET_OuT It is confirmed to be larger than ) or the exhaust gas flow rate (M OUT ) is the exhaust gas standard flow rate (M SET_OuT This is performed when it is confirmed that the value is greater than ). The nitrogen flow rate holding stage (step S164) is performed by the control unit 190 controlling the flow control valve 180 which adjusts the flow rate of high-temperature nitrogen gas.

[0040] In the nitrogen flow rate increase stage (step S168), the flow rate of high-temperature nitrogen gas supplied to the pump exhaust pipe (E) is increased. In the nitrogen flow rate increase stage (step S168), the exhaust gas pressure (P OUT ) is the exhaust gas standard pressure (P SET_OuT It is confirmed that it is less than or equal to the exhaust gas flow rate (M OUT ) is the exhaust gas standard flow rate (M SET_OuT This is performed when it is confirmed that the value is below ). The nitrogen flow rate increase step (step S168) is performed by the control unit 190 controlling the flow control valve 180 which adjusts the flow rate of high-temperature nitrogen gas.

[0041] In the inflow gas reference pressure resetting stage (step S170), the inflow gas reference pressure (P SET_IN) The following is reset. The inflow gas reference pressure resetting step (step S170) is performed as a result of the exhaust gas state comparison step (step S160) and the exhaust gas pressure (P OUT ) is the exhaust gas standard pressure (P SET_OuT It is confirmed that it is less than or equal to the exhaust gas flow rate (M OUT ) is the exhaust gas standard flow rate (M SET_OuT This is performed when it is confirmed that the inflow gas reference pressure is below (P). The inflow gas reference pressure resetting step (step S170) is performed when the control unit 190 adjusts the inflow gas reference pressure (P) in response to the flow rate of high-temperature nitrogen gas that increases through the nitrogen flow rate increase step (step S168). SET_IN This is done by increasing and resetting the inflow gas reference pressure (P) in the inflow gas reference pressure resetting stage (step S170). SET_IN This is applied during the inflow gas pressure comparison stage (step S150).

[0042] The control unit 190 can also monitor information such as pressure measured by the inflow gas measuring unit 160 and the exhaust gas measuring unit 170, and perform alarm functions for turning the equipment on or off.

[0043] The hazardous gas treatment equipment 100 according to the present invention uses a plasma method instead of a conventional thermal method such as combustion, so it does not require a fuel supply, and the vacuum plasma reactor 110 can operate only when the gas to be treated is flowing in, resulting in high energy efficiency. Furthermore, since it uses a low-temperature plasma reaction instead of a high-temperature combustion method, safety is improved. And, without burning fuel, it uses electrical energy as an energy source and processes NO using a plasma reaction before the combustion gas supply. X , SO X Furthermore, it is environmentally advantageous because it reduces CO2 emissions. In addition, since the scrubber eliminates the need for heat-based treatment devices like those in conventional combustors, the overall size of the scrubber is reduced.

[0044] The hazardous gas treatment equipment 100 according to the present invention can respond to variations in exhaust gases from various semiconductor process chambers (C). Furthermore, it can handle all processes in the semiconductor process chamber (C) with a single hazardous gas treatment equipment 100. In other words, it eliminates the need to change the related configurations for gas treatment of pumps and plasma reactors for each of the various processes in the semiconductor process chamber (C).

[0045] In the above embodiment, it was explained that the state of the gas flowing through the pump exhaust pipe (E) and the gas discharged from the wet scrubber 150 is monitored, but the present invention is not limited thereto. Monitoring the state of the gas flowing in the section between the upstream of the vacuum plasma reactor 110 and the downstream of the wet scrubber 150 is also within the scope of the present invention. For example, monitoring of the gas is performed at at least one of the following points: between the process chamber (C) and the vacuum plasma reactor 110, between the vacuum plasma reactor 110 and the vacuum pump (P), between the vacuum pump (P) and the wet scrubber 150, and downstream of the wet scrubber 150. Through the monitoring, information on the gas flow rate, pressure, temperature, composition, and concentration is confirmed. Based on the gas information confirmed through the monitoring, the control unit 190 can control the operation of the power supply unit 140 to adjust the power supplied to the vacuum plasma reactor 110. The control unit 190 can also improve the processing efficiency by adjusting the amount of reactive gas supplied to the vacuum plasma reactor 110 based on the gas information confirmed through the monitoring.

[0046] Although the present invention has been described above through embodiments, the present invention is not limited thereto. The above embodiments can be modified or altered without departing from the spirit and scope of the present invention, and those skilled in the art will understand that such modifications and alterations also belong to the present invention.

Claims

1. Equipment for processing harmful components contained in a semiconductor manufacturing facility, comprising a semiconductor process chamber, a foreline exhaust pipe extending from the semiconductor process chamber, a vacuum pump for discharging gas from the semiconductor process chamber through the foreline exhaust pipe, and a pump exhaust pipe through which the gas discharged from the vacuum pump flows, A vacuum plasma reactor is provided on the foreline exhaust pipe and generates a plasma reaction with the gas discharged from the semiconductor process chamber to perform plasma treatment on the gas, A power supply device that supplies power to the vacuum plasma reactor, A wet scrubber connected to the pump exhaust pipe and used to process the entire gas discharged from the vacuum pump in a wet manner, Includes equipment for treating harmful gases.

2. A gas measuring unit that measures the state of the gas flowing in the section between the upstream of the vacuum plasma reactor and the downstream of the wet scrubber and collects gas information, The hazardous gas treatment equipment according to claim 1, further comprising: a control unit that controls the operation of the power supply device based on the gas information and adjusts the power supplied to the vacuum plasma reactor.

3. The aforementioned gas information includes the pressure of the scrubber inflow gas flowing into the wet scrubber. The hazardous gas treatment equipment according to claim 2, wherein the control unit increases the power supplied to the vacuum plasma reactor when the pressure of the scrubber inlet gas is greater than a set inlet gas reference pressure.

4. The system further includes a flow control valve that adjusts the flow rate of high-temperature nitrogen gas supplied to the pump exhaust pipe, The harmful gas treatment equipment according to claim 3, wherein the operation of the flow control valve is controlled by the control unit.

5. The gas information further includes the flow rate or pressure of the scrubber exhaust gas discharged from the wet scrubber, The hazardous gas treatment equipment according to claim 4, wherein the control unit increases the flow rate of the high-temperature nitrogen gas supplied to the pump exhaust pipe and increases and resets the inflow gas standard pressure when the flow rate of the scrubber exhaust gas is less than or equal to a set scrubber exhaust gas standard flow rate or when the pressure of the scrubber exhaust gas is less than or equal to a set scrubber exhaust gas standard pressure.

6. The hazardous gas treatment equipment according to claim 2, wherein the gas information includes the amount of a specific component contained in the gas.

7. The vacuum pump is a variable-operation vacuum pump whose operating capacity is adjustable. The hazardous gas treatment equipment according to claim 3, wherein the control unit checks the operating capacity of the vacuum pump and sets the inflow gas reference pressure in accordance with the operating capacity.

8. The system further includes a control unit that controls the operation of the power supply unit and confirms the inflow of gas into the vacuum plasma reactor, The hazardous gas treatment equipment according to claim 1, wherein the control unit controls the operation of the power supply device so that power is supplied to the vacuum plasma reactor only when gas inflow into the vacuum plasma reactor is confirmed.

9. A method for operating a hazardous gas treatment system provided in a semiconductor manufacturing facility, which includes a semiconductor process chamber, a foreline exhaust pipe extending from the semiconductor process chamber, a vacuum pump for discharging gas from the semiconductor process chamber through the foreline exhaust pipe, and a pump exhaust pipe through which the gas discharged from the vacuum pump flows, for treating hazardous components contained in the gas, The hazardous gas treatment equipment comprises a vacuum plasma reactor installed on the foreline exhaust pipe, a control unit that controls the operation of a power supply device that supplies power to the vacuum plasma reactor and adjusts the power supplied to the vacuum plasma reactor, a wet scrubber connected to the pump exhaust pipe and treating the entire gas discharged from the vacuum pump in a wet manner, and a gas measuring unit that measures the state of the gas flowing in the section between the upstream of the vacuum plasma reactor and the downstream of the wet scrubber and collects gas information. A gas state confirmation step in which the gas information is confirmed by the control unit, A gas reference state setting step in which the gas reference state is set by the control unit, A gas state comparison step in which the gas information and the gas reference state are compared by the control unit, A power control step in which the power supplied to the vacuum plasma reactor by the control unit is controlled based on the result of comparing the gas information with the gas reference state, Operation methods for hazardous gas treatment equipment, including [specific example].

10. The aforementioned gas information includes the pressure of the scrubber inflow gas flowing into the wet scrubber. The aforementioned gas reference conditions include the scrubber inflow gas reference pressure, The method for operating a hazardous gas treatment system according to claim 9, wherein, in the gas state comparison stage, the pressure of the gas flowing into the scrubber is greater than a set reference pressure for the incoming gas, and in the power control stage, the power supplied to the vacuum plasma reactor is increased.

11. The aforementioned hazardous gas treatment equipment further comprises a flow control valve controlled by the control unit, which adjusts the flow rate of high-temperature nitrogen gas supplied to the pump exhaust pipe. The gas information further includes the flow rate of the scrubber exhaust gas discharged from the wet scrubber, The aforementioned gas reference condition further includes the scrubber exhaust gas reference flow rate, In the gas state comparison stage, the flow rate of the scrubber exhaust gas is further compared with the standard flow rate of the scrubber exhaust gas. The method for operating a hazardous gas treatment equipment according to claim 10, further comprising a nitrogen flow rate increase step in which, if it is confirmed in the gas state comparison step that the flow rate of the scrubber exhaust gas is less than or equal to the exhaust gas standard flow rate, the operation of the flow control valve is controlled by the control unit to increase the flow rate of the high-temperature nitrogen gas.

12. The aforementioned hazardous gas treatment equipment further comprises a flow control valve controlled by the control unit, which adjusts the flow rate of high-temperature nitrogen gas supplied to the pump exhaust pipe. The gas information further includes the pressure of the scrubber exhaust gas discharged from the wet scrubber, The aforementioned gas reference conditions further include the scrubber exhaust gas reference pressure, In the gas state comparison stage, the pressure of the scrubber exhaust gas and the reference pressure of the scrubber exhaust gas are further compared. The method for operating a hazardous gas treatment equipment according to claim 10, further comprising a nitrogen flow rate increase step in which, if it is confirmed in the gas state comparison step that the pressure of the scrubber exhaust gas is below the exhaust gas reference pressure, the operation of the flow control valve is controlled by the control unit to increase the flow rate of the high-temperature nitrogen gas.

13. A method for operating a hazardous gas treatment system according to claim 11 or 12, further comprising an inflow gas reference pressure resetting step, in which the inflow gas reference pressure is reset by the control unit in response to the increase in the flow rate of the high-temperature nitrogen gas that occurs as a result of the nitrogen flow rate increase step.

14. The vacuum pump is a variable-operation vacuum pump whose operating capacity is adjustable. The control unit further includes an operating capacity confirmation step in which the operating capacity of the vacuum pump is confirmed, The method for operating a hazardous gas treatment equipment according to claim 10, wherein the inflow gas reference pressure is set in the inflow gas reference pressure setting stage in accordance with the operating capacity of the vacuum pump.

15. A method for operating a hazardous gas treatment system according to claim 9, further comprising: a gas inflow confirmation step in which the control unit confirms whether or not gas is flowing into the vacuum plasma reactor; a power supply step in which power is supplied to the vacuum plasma reactor if it is confirmed in the gas inflow confirmation step that gas is flowing into the vacuum plasma reactor; and a power cutoff step in which the power supply to the vacuum plasma reactor is cut off if it is confirmed in the gas inflow confirmation step that gas is not flowing into the vacuum plasma reactor.

Images