Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities

Abstract

According to the present invention, a plasma equipment for treating exhaust gas discharged from a semiconductor process chamber through a chamber exhaust pipe by a vacuum pump is provided, comprising: an exhaust pipe plasma reactor provided on the chamber exhaust pipe and generating plasma in the exhaust gas to remove target components contained in the exhaust gas; a remote plasma reactor generating plasma to decompose a remote plasma source gas and generate a remote plasma containing reaction-active species; a shared power supply unit that simultaneously produces the power necessary for the operation of the exhaust pipe plasma reactor and the remote plasma reactor; and a power distributor that distributes the AC power produced from the shared power supply unit and supplies it simultaneously to the exhaust pipe plasma reactor and the remote plasma reactor.

Description

[Technical Field]

[0001] The present invention relates to semiconductor manufacturing equipment technology, and more particularly to plasma equipment for treating exhaust gas discharged from the process chamber of a semiconductor manufacturing facility. [Background technology]

[0002] Semiconductor devices are manufactured in a semiconductor process chamber by repeatedly performing processes such as photolithography, etching, diffusion, and metal deposition on wafers using various process gases. After the process is completed in the semiconductor process chamber, residual gas remains. Because this residual gas contains toxic components, it is discharged by a vacuum pump and purified by exhaust gas treatment equipment such as a scrubber. However, as the exhaust gas flows, powder accumulates in the vacuum pump and the exhaust pipe connecting the vacuum pump and the scrubber, reducing the fluidity of the exhaust gas and shortening the equipment's MTBF (Mean Time Between Failure).

[0003] Korean Published Patent No. 10-2007-0024806 describes a technology for preventing solidification due to a drop in exhaust gas temperature by providing a heating jacket in a vacuum pipe. [Overview of the project] [Problems that the invention aims to solve]

[0004] The objective of the present invention is to provide plasma processing equipment that can efficiently process exhaust gases discharged from process chambers in semiconductor manufacturing facilities where semiconductor manufacturing processes using various process gases are carried out. [Means for solving the problem]

[0005] To achieve the object of the present invention, according to one aspect of the present invention, there is a plasma equipment for treating exhaust gas in a semiconductor manufacturing facility, which includes: an exhaust pipe plasma reactor provided on the chamber exhaust pipe and which generates plasma in the exhaust gas to remove target components contained in the exhaust gas; a remote plasma reactor that generates plasma to decompose a remote plasma source gas and generate a remote plasma containing reactive species; a shared power supply unit that simultaneously produces AC power necessary for the operation of the exhaust pipe plasma reactor and the remote plasma reactor; and a power distributor that distributes the AC power produced from the shared power supply unit and supplies it simultaneously to the exhaust pipe plasma reactor and the remote plasma reactor, wherein the remote plasma is supplied between the semiconductor manufacturing chamber and the vacuum pump on the exhaust gas flow line, and one of the exhaust pipe plasma reactor and the remote plasma reactor is an inductively coupled plasma reactor and the other is a capacitively coupled plasma reactor. [Effects of the Invention]

[0006] According to the present invention, all of the aforementioned objectives of the present invention can be achieved. Specifically, the plasma equipment for exhaust gas treatment of semiconductor manufacturing equipment according to the present invention includes an exhaust pipe plasma reactor installed in a chamber exhaust pipe which is a foreline and generates plasma on the exhaust gas flow line to remove target components; a remote plasma reactor that generates remote plasma supplied from the outside onto the exhaust line flow line; a shared power supply unit that simultaneously produces AC power necessary for the operation of the exhaust pipe plasma reactor and the remote plasma reactor; and a power distributor that distributes the AC power produced from the shared power supply unit and supplies it simultaneously to the exhaust pipe plasma reactor and the remote plasma reactor. As a result, when the exhaust pipe plasma reactor and the remote plasma reactor are operating simultaneously, the power supplied to the exhaust pipe plasma reactor and the power supplied to the remote plasma reactor by the power distributor are appropriately distributed and supplied according to the process conditions, thereby improving the overall exhaust gas treatment efficiency and the efficiency of powder component removal. [Brief explanation of the drawing]

[0007] [Figure 1] This is a diagram showing the schematic configuration of a semiconductor manufacturing facility equipped with a plasma system for exhaust gas treatment according to the first embodiment of the present invention.

[0008] [Figure 2] This is a diagram showing the schematic configuration of a semiconductor manufacturing facility equipped with a plasma system for exhaust gas treatment according to a second embodiment of the present invention.

[0009] [Figure 3] This is a diagram showing the schematic configuration of a semiconductor manufacturing facility equipped with a plasma system for exhaust gas treatment according to a third embodiment of the present invention.

[0010] [Figure 4] This is a diagram showing the schematic configuration of a semiconductor manufacturing facility equipped with a plasma system for exhaust gas treatment according to a fourth embodiment of the present invention.

[0011] [Figure 5]This is a diagram showing a schematic configuration of a semiconductor manufacturing facility equipped with a plasma system for exhaust gas treatment according to a fifth embodiment of the present invention. [Modes for carrying out the invention]

[0012] The configuration and operation of embodiments of the present invention will be described in detail below with reference to the drawings.

[0013] Figure 1 shows a schematic block diagram of a semiconductor manufacturing facility equipped with a plasma exhaust gas treatment system according to the first embodiment of the present invention. Referring to Figure 1, the semiconductor manufacturing facility 100 includes a semiconductor manufacturing equipment 101 on which a semiconductor manufacturing process for manufacturing semiconductor elements is carried out, a gas purification equipment 103 for purifying the gas emitted from the semiconductor manufacturing equipment 101, an exhaust equipment 105 that discharges the gas from the semiconductor manufacturing equipment 101 and allows it to flow into the gas purification equipment 103, and a plasma exhaust gas treatment system 110 according to the first embodiment of the present invention for treating the gas emitted from the semiconductor manufacturing equipment 101.

[0014] The semiconductor manufacturing equipment 101 manufactures semiconductor devices by performing a semiconductor manufacturing process. The semiconductor manufacturing equipment 101 includes a semiconductor process chamber 102 in which a semiconductor manufacturing process using various process gases proceeds. Although not shown in the figure, the semiconductor manufacturing equipment 101 further includes a process gas supply unit that supplies various types of process gases required for the semiconductor process chamber 102.

[0015] The semiconductor process chamber 102 includes all forms of semiconductor process chambers commonly used in the semiconductor manufacturing equipment technology field to manufacture semiconductor devices. Residual gases generated in the semiconductor process chamber 102 are discharged to the outside by exhaust equipment 105, treated by exhaust gas treatment plasma equipment 110, and then purified by gas purification equipment 103.

[0016] In this embodiment, the semiconductor process performed in the semiconductor process chamber 102 is also an SiO2 process for forming a silicon oxide film on the substrate, a TiO2 process for forming a titanium dioxide film on the substrate, a ZrO2 process for forming a zirconia film on the substrate, an HfO2 process for forming a hafnium oxide film on the substrate, an Nb2O5 process for forming a niobium pentoxide film on the substrate, and a Ta2O5 process for forming a tantalum pentoxide film on the substrate.

[0017] In the SiO2 process, a silicon dioxide (SiO2) film is formed on the substrate. In this embodiment, it is explained that a process gas containing Si(OC2H5)4(TEOS: Tetraethyl Orthosilicate) as a precursor is used in the SiO2 process for the generation of silicon dioxide (SiO2). After the SiO2 process is performed, the exhaust gas discharged from the semiconductor process chamber 102 contains SiO2 (silicon dioxide) powder, unreacted TEOS, and oxygen. The TEOS contained in the exhaust gas from the SiO2 process reacts with oxygen to further generate SiO2 powder in the exhaust gas. If the SiO2 powder contained in the exhaust gas accumulates in the exhaust equipment 105, the fluidity of the exhaust gas decreases.

[0018] In the TiO2 process, a titanium dioxide (TiO2) film is formed on the substrate. In this embodiment, it is explained that a process gas containing Ti(OCH2CH3)4 (titanium tetraetoxide) as a precursor is used in the TiO2 process for the generation of titanium dioxide (TiO2). After the TiO2 process is performed, the exhaust gas discharged from the semiconductor process chamber 102 contains titanium dioxide (TiO2) powder, unreacted Ti(OCH2CH3)4, and oxygen. Ti(OCH2CH3)4 contained in the exhaust gas of the TiO2 process reacts with oxygen to further generate TiO2 powder in the exhaust gas. If the TiO2 powder contained in the exhaust gas accumulates in the exhaust equipment 105, the fluidity of the exhaust gas decreases.

[0019] In the ZrO2 process, a zirconia (ZrO2) film is formed on the substrate. In this embodiment, it is explained that a process gas containing (C5H5)Zr(N(CH3)2)3 as a precursor is used in the ZrO2 process for the generation of zirconia (ZrO2). After the ZrO2 process is performed, the exhaust gas discharged from the semiconductor process chamber 102 contains zirconia (ZrO2) powder, unreacted (C5H5)Zr(N(CH3)2)3, and oxygen. The (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas of the ZrO2 process reacts with oxygen to further generate ZrO2 powder in the exhaust gas. If the ZrO2 powder contained in the exhaust gas accumulates in the exhaust equipment 105, the fluidity of the exhaust gas decreases.

[0020] In the HfO2 process, a hafnium oxide (HfO2) film is formed on the substrate. In this embodiment, it is explained that a process gas containing (C5H5)Hf(N(CH3)2)3 as a precursor is used in the HfO2 process for the generation of hafnium oxide (HfO2). After the HfO2 process is performed, the exhaust gas discharged from the semiconductor process chamber 102 contains hafnium oxide (HfO2) powder, unreacted (C5H5)Hf(N(CH3)2)3, and oxygen. The (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas of the HfO2 process reacts with oxygen to further generate HfO2 powder in the exhaust gas. If the HfO2 powder contained in the exhaust gas accumulates in the exhaust equipment 105, the fluidity of the exhaust gas decreases.

[0021] In the Nb2O5 process, a niobium pentoxide (Nb2O5) film is formed on the substrate. In this embodiment, it is explained that a process gas containing (C5H5)Nb(N(CH3)2)3 as a precursor is used in the Nb2O5 process for the generation of niobium pentoxide (Nb2O5). After the Nb2O5 process is performed, the exhaust gas discharged from the semiconductor process chamber 102 contains niobium pentoxide (Nb2O5) powder, unreacted (C5H5)Nb(N(CH3)2)3, and oxygen. The (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas of the Nb2O5 process reacts with oxygen to further generate Nb2O5 powder in the exhaust gas. If the Nb2O5 powder contained in the exhaust gas accumulates in the exhaust equipment 105, the fluidity of the exhaust gas decreases.

[0022] In the Ta2O5 process, a tantalum pentoxide (Ta2O5) film is formed on the substrate. In this embodiment, it is explained that a process gas containing Ta(OC2H5)5 as a precursor is used in the Ta2O5 process for the generation of tantalum pentoxide (Ta2O5). After the Ta2O5 process is performed, the exhaust gas discharged from the semiconductor process chamber 102 contains tantalum pentoxide (Ta2O5) powder, unreacted Ta(OC2H5)5, and oxygen. The Ta(OC2H5)5 contained in the exhaust gas of the Ta2O5 process reacts with oxygen to further generate Ta2O5 powder in the exhaust gas. If the Ta2O5 powder contained in the exhaust gas accumulates in the exhaust equipment 105, the fluidity of the exhaust gas decreases.

[0023] The gas purification equipment 103 processes and purifies harmful components contained in the exhaust gas discharged from the semiconductor process chamber 102 by the exhaust equipment 105. The gas purification equipment 103 includes a scrubber 104 for purifying the exhaust gas. The scrubber 104 includes any form of scrubber commonly used to purify exhaust gas in the semiconductor manufacturing equipment technology field.

[0024] The exhaust system 105 discharges residual gas generated after processing in the semiconductor process chamber 102 from the semiconductor process chamber 102. The exhaust system 105 includes a vacuum pump 106, a chamber exhaust pipe 107 connecting the semiconductor process chamber 102 and the vacuum pump 106, and a pump exhaust pipe 108 extending downstream from the vacuum pump 106.

[0025] The vacuum pump 106 creates negative pressure on the semiconductor process chamber 102 side through the chamber exhaust pipe 107 to discharge residual gas from the semiconductor process chamber 102. Since the vacuum pump 106 includes the configuration of a vacuum pump commonly used for gas discharge in the semiconductor manufacturing equipment technology field, a detailed explanation thereof is omitted. Powder accumulates on the vacuum pump 106, degrading its performance. According to the exhaust gas treatment plasma equipment 110 of the present invention, powder accumulation on the vacuum pump 106 is suppressed, and the MTBF of the vacuum pump 106 is extended.

[0026] The chamber exhaust pipe 107 connects the exhaust port of the semiconductor process chamber 102 to the intake port of the vacuum pump 106 between the semiconductor process chamber 102 and the vacuum pump 106. The negative pressure created by the vacuum pump 106 causes the residual gas in the semiconductor process chamber 102 to be discharged as exhaust gas through the chamber exhaust pipe 107. The exhaust gas is treated by the exhaust gas treatment plasma equipment 110 as it flows through the chamber exhaust pipe 107.

[0027] The pump exhaust pipe 108 extends downstream from the vacuum pump 106. The pump exhaust pipe 108 is connected to the discharge port of the vacuum pump 106, and the exhaust gas discharged from the vacuum pump 106 flows through it. A scrubber 104 is connected to the downstream end of the pump exhaust pipe 108, and the exhaust gas discharged from the vacuum pump 106 flows into the scrubber 103 through the pump exhaust pipe 108.

[0028] The exhaust gas treatment plasma equipment 110 treats the exhaust gas discharged from the semiconductor process chamber 102 using plasma to decompose harmful components contained in the exhaust gas and gasify the powder to prevent a decrease in the fluidity of the exhaust gas. The exhaust gas treatment plasma equipment 110 includes an exhaust pipe plasma reactor 120 that generates a plasma reaction with respect to the exhaust gas discharged from the semiconductor process chamber 102, an exhaust pipe plasma source gas supplier 130 that supplies plasma source gas to the exhaust pipe plasma reactor 120, a powder collection trap 140 provided on the chamber exhaust pipe 107 to collect powder, a remote plasma reactor 150 that generates reaction-active species supplied to the powder collection trap 140 using plasma, a remote plasma source gas supplier 160 that supplies plasma source gas to the remote plasma reactor 150, and the exhaust pipe plasma reactor 12 The system includes a shared power supply unit 170 that produces the power necessary for the operation of both the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, a power distributor 180 that distributes the power produced by the shared power supply unit 170 and supplies it to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, a controller 190 that controls the operation of the power distributor 180, an exhaust pipe plasma impedance matching unit 195 that matches the impedance between the power distributor 180 and the exhaust pipe plasma reactor 120, and a remote plasma impedance matching unit 198 that matches the impedance between the power distributor 180 and the remote plasma reactor 150.

[0029] The exhaust pipe plasma reactor 120 is installed on the chamber exhaust pipe 107 and generates a plasma reaction with respect to the exhaust gas discharged from the semiconductor process chamber 102. The exhaust pipe plasma reactor 120 basically performs the function of temporarily removing target components contained in the exhaust gas discharged from the semiconductor process chamber 102. A stabilized powder is produced in the exhaust pipe plasma reactor 120. In this embodiment, the exhaust pipe plasma reactor 120 is an inductively coupled plasma reactor using inductively coupled plasma (ICP). As the exhaust pipe plasma reactor 120, an inductively coupled plasma reactor with a normal configuration (for example, the plasma reactor described in Registered Korean Patent No. 10-2265878) is used, so a detailed explanation of this is omitted here. The exhaust pipe plasma reactor 120 decomposes the source gas, NF3 gas or O2 gas supplied from the exhaust pipe plasma source gas supplier 130, using plasma to generate excited fluorine atoms (F), which are reaction-active species. * ) or excited oxygen atom (O * ) generates.

[0030] The exhaust pipe plasma source gas supplier 130 stores the exhaust pipe plasma source gas, which is the source gas for the reactive species generated by the plasma in the exhaust pipe plasma reactor 120, and supplies the stored exhaust pipe plasma source gas to the exhaust pipe plasma reactor 120. In this embodiment, the exhaust pipe plasma source gas supplier 130 is described as supplying nitrogen trifluoride (NF3) or oxygen (O2) as the exhaust pipe plasma source gas to the exhaust pipe plasma reactor 120. In the embodiment shown in Figure 1, the exhaust pipe plasma source gas supplier 130 may not be provided, and this also falls within the scope of the present invention.

[0031] The powder collection trap 140 is located downstream of the exhaust pipe plasma reactor 120 on the chamber exhaust pipe 107 and collects powder contained in the exhaust gas discharged from the exhaust pipe plasma reactor 120. The powder collection trap 140 is a commonly used type (for example, the particle collection device described in Registered Korean Patent No. 10-1480237), so a detailed explanation of it will be omitted. The powder collected in the powder collection trap 140 reacts with reaction-active species generated from the remote plasma reactor 150 and is gasified. The powder collection trap 140 may also be equipped with a cooling device.

[0032] The remote plasma reactor 150 uses plasma to decompose the remote plasma source gas supplied from the remote plasma source gas supplier 160, generating a remote plasma containing reactive species. The remote plasma containing reactive species generated from the remote plasma reactor 150 additionally removes any target components that have not been removed from the exhaust pipe plasma reactor 120. The remote plasma gas containing reactive species generated from the remote plasma reactor 150 is supplied to the powder collection trap 140. In this embodiment, the remote plasma reactor 150 uses plasma to generate reactive species, specifically excited fluorine atoms (F), which are reactive fluorine atoms. * ) generates excited oxygen atoms (O) which are reactive oxygen. * This generates excited fluorine atoms (F * In this embodiment, excited oxygen atoms (O) are generated when nitrogen trifluoride (NF3), which is the source gas supplied from the remote plasma source gas supplier 160, is decomposed by plasma in the remote plasma reactor 150. *It is explained that oxygen (O2), which is the source gas supplied from the remote plasma source gas supplier 160, is decomposed by plasma in the remote plasma reactor 150 to produce the plasma. In this embodiment, the remote plasma reactor 150 is described as being coupled with the powder collection trap 140 to form an integrated unit, but the present invention is not limited thereto. The remote plasma reactor 150 is in communication with the powder collection trap 140 through piping, and this also falls within the scope of the present invention. In this embodiment, the remote plasma reactor 150 is a capacitively coupled plasma reactor using capacitively coupled plasma (CCP). As the remote plasma reactor 150, a capacitively coupled plasma reactor with a normal configuration (for example, the plasma reactor described in Registered Korean Patent No. 10-2040823) is used, so a detailed explanation of this is omitted here.

[0033] The remote plasma source gas supplier 160 stores the remote plasma source gas, which is the source gas for the reaction-active species generated by the plasma in the remote plasma reactor 150, and supplies the stored remote plasma source gas to the remote plasma reactor 160. In this embodiment, the remote plasma gas supplier 160 is described as supplying nitrogen trifluoride (NF3) or oxygen (O2) as the remote plasma source gas to the remote plasma reactor 150.

[0034] The shared power supply unit 170 produces the AC power necessary for inductively coupled plasma generation in the exhaust pipe plasma reactor 120 and capacitively coupled plasma generation in the remote plasma reactor 150. The AC power produced from the shared power supply unit 170 is distributed through the power distributor 180 and supplied simultaneously to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150. In this embodiment, the AC power produced by the shared power supply unit 170 is described as radio frequency (RF) power, which is a high-frequency power.

[0035] The power distributor 180 distributes the high-frequency AC power produced from the shared power supply unit 170 and supplies it to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 respectively, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously. The power distributor 180 can be controlled by the controller 190 to adjust the ratio of the power supplied to the exhaust pipe plasma reactor 120 and the power supplied to the remote plasma reactor 150.

[0036] The controller 190 controls the operation of the power distributor 180. The controller 190 controls the operation of the power distributor 180, adjusting the ratio of the AC power supplied to the exhaust pipe plasma reactor 120 and the AC power supplied to the remote plasma reactor 150, which is produced by the shared power supply unit 170.

[0037] The exhaust pipe plasma impedance matching unit 195 matches the impedance between the power distributor 180 and the exhaust pipe plasma reactor 120.

[0038] The remote plasma impedance matching unit 198 matches the impedance between the power distributor 180 and the remote plasma reactor 150.

[0039] In the above embodiment, the exhaust pipe plasma reactor 120 is described as an inductively coupled plasma reactor and the remote plasma reactor 150 is a capacitively coupled plasma reactor. However, contrary to this, the exhaust pipe plasma reactor 120 is a capacitively coupled plasma reactor and the remote plasma reactor 150 is an inductively coupled plasma reactor, and this also falls within the scope of the present invention.

[0040] The operation of the exhaust gas treatment plasma equipment 110 through various processes performed in the process chamber 102 will be explained in detail below.

[0041] First, when an SiO2 process using a process gas containing an Si-containing precursor is performed in the process chamber 102, the operation of the plasma device 110 for exhaust gas treatment will be described as follows. In the present embodiment, it is described that TEOS is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber 102, exhaust gas containing SiO2 powder, unreacted TEOS and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is discharged from the semiconductor process chamber 102, the high-frequency AC power generated from the shared power supply device 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 respectively by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0042] The operation of the exhaust pipe plasma reactor 120 is as follows. The unreacted TEOS contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited oxygen atoms (O * ) generated by the oxygen supplied from the exhaust pipe plasma source gas supplier 130, and reacts therewith to generate SiO2, which is stabilized powder. The SiO2 powder generated from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120, flows along the chamber exhaust pipe 107, and is collected by the powder collection trap 140. In addition, the SiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited fluorine atoms (F * ) generated by nitrogen trifluoride (NF3) supplied from the exhaust pipe plasma source gas supplier 130, and can react therewith to be gasified to form SiF4.

[0043] The operation of the remote plasma reactor 150 is as follows. The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied from the remote plasma source gas supplier 160 to generate excited fluorine atoms (F * ). The excited fluorine atoms (F generated from the remote plasma reactor 150 *The SiO2 powder is supplied to the powder collection trap 140. In the powder collection trap 140, the excited fluorine atoms (F) of the SiO2 powder are released. * ) reacts with and is gasified to form SiF4. In addition, the remote plasma reactor 150 decomposes the oxygen supplied by the remote plasma source gas supplier 160 to excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O) generated from the remote plasma reactor 150 * ) is supplied to the powder collection trap 140. In the powder collection trap 140, the unreacted TEOS contained in the exhaust gas is excited by oxygen atoms (O * ) reacts with to produce SiO2 powder, which is collected in the powder collection trap 140.

[0044] Next, the operation of the exhaust gas treatment plasma equipment 110 when a TiO2 process is performed in the process chamber 102 using a process gas containing a Ti-containing precursor will be explained as follows. In this embodiment, Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber 102, exhaust gas containing TiO2 powder, unreacted Ti(OCH2CH3)4 and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0045] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited by oxygen atoms (O) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. *) reacts with to produce TiO2, a stabilized powder. The TiO2 powder produced from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120 and flows along the chamber exhaust pipe 107 to be collected in the powder collection trap 140. In addition, the TiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 reacts with excited fluorine atoms (F3) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130. * ) can react with other substances to form a gas that can then be vaporized to create TiF4.

[0046] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * The TiO2 powder is supplied to the powder collection trap 140. In the powder collection trap 140, the TiO2 powder is excited by fluorine atoms (F * ) reacts with and is gasified to form TiF4. In addition, the remote plasma reactor 150 decomposes the oxygen supplied by the remote plasma source gas supplier 160 to excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O) generated from the remote plasma reactor 150 * ) is supplied to the powder collection trap 140. In the powder collection trap 140, the unreacted Ti(OCH2CH3)4 contained in the exhaust gas is excited by oxygen atoms (O * It reacts with ) to produce TiO2 powder, which is collected in the powder collection trap 140.

[0047] Next, the operation of the exhaust gas treatment plasma equipment 110 when a ZrO2 process is performed in the process chamber 102 using a process gas containing a Zr-containing precursor will be explained as follows. In this embodiment, (C5H5)Zr(N(CH3)2)3 is used as the Zr-containing precursor. After the ZrO2 process is performed in the process chamber 102, exhaust gas containing ZrO2 powder, unreacted (C5H5)Zr(N(CH3)2)3 and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0048] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber 102 is reacted with excited oxygen atoms (O) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. * ) reacts with to produce ZrO2, a stabilized powder. The ZrO2 powder produced from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120 and flows along the chamber exhaust pipe 107 to be collected in the powder collection trap 140. In addition, the ZrO2 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 reacts with excited fluorine atoms (F3) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130. * ) can react with and be vaporized to form ZrF4.

[0049] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. *The ) is supplied to the powder collection trap 140. In the powder collection trap 140, the ZrO2 powder is excited by the fluorine atoms (F * It reacts with (O) and is gasified to form ZrF4. In addition, the remote plasma reactor 150 decomposes the oxygen supplied by the remote plasma source gas supplier 160 and excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O) generated from the remote plasma reactor 150 * The unreacted (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas is supplied to the powder collection trap 140. In the powder collection trap 140, the excited oxygen atoms (O * It reacts with ) to produce ZrO2 powder, which is collected in the powder collection trap 140.

[0050] Next, the operation of the exhaust gas treatment plasma equipment 110 when an HfO2 process is performed in the process chamber 102 using a process gas containing an Hf-containing precursor will be explained as follows. In this embodiment, (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber 102, exhaust gas containing HfO2 powder, unreacted (C5H5)Hf(N(CH3)2)3 and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0051] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber 102 is reacted with excited oxygen atoms (O) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. *) reacts with to produce a stabilized powder called HfO2. The HfO2 powder produced from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120 and flows along the chamber exhaust pipe 107 to be collected in the powder collection trap 140. In addition, the HfO2 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 reacts with excited fluorine atoms (F3) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130. * ) can react with other substances to form a gas that can then be converted into HfF4.

[0052] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * The ) is supplied to the powder collection trap 140. In the powder collection trap 140, the HfO2 powder is excited by the fluorine atoms (F * ) reacts with and is gasified to form HfF4. In addition, the remote plasma reactor 150 decomposes the oxygen supplied by the remote plasma source gas supplier 160 and excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O) generated from the remote plasma reactor 150 * ) is supplied to the powder collection trap 140. In the powder collection trap 140, the unreacted (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas is excited by the oxygen atoms (O * It reacts with ) to produce HfO2 powder, which is collected in the powder collection trap 140.

[0053] Next, the operation of the exhaust gas treatment plasma equipment 110 when an Nb2O5 process is performed in the process chamber 102 using a process gas containing an Nb-containing precursor will be explained as follows. In this embodiment, (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber 102, exhaust gas containing Nb2O5 powder, unreacted (C5H5)Nb(N(CH3)2)3 and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0054] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber 102 is reacted with excited oxygen atoms (O) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. * ) reacts with to produce Nb2O5, a stabilized powder. The Nb2O5 powder produced from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120 and flows along the chamber exhaust pipe 107 to be collected in the powder collection trap 140. In addition, the Nb2O5 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 reacts with excited fluorine atoms (F) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130. * ) can react with and be vaporized to form NbF5.

[0055] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150.* The powder is supplied to the powder collection trap 140. In the powder collection trap 140, the Nb2O5 powder is excited by the fluorine atoms (F * It reacts with (O) and is gasified to form NbF5. In addition, the remote plasma reactor 150 decomposes the oxygen supplied by the remote plasma source gas supplier 160 and excited oxygen atoms (O *) It can generate excited oxygen atoms (O) generated from the remote plasma reactor 150. * ) is supplied to the powder collection trap 140. In the powder collection trap 140, the unreacted (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas is excited by the oxygen atoms (O * It reacts with ) to produce Nb2O5 powder, which is collected in the powder collection trap 140.

[0056] Next, the operation of the exhaust gas treatment plasma equipment 110 when a Ta2O5 process is performed in the process chamber 102 using a process gas containing a Ta-containing precursor will be explained as follows. In this embodiment, Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber 102, exhaust gas containing Ta2O5 powder, unreacted Ta(OC2H5)5, and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0057] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber 102 is reacted with excited oxygen atoms (O2H5) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. *) reacts with to produce Ta2O5, a stabilized powder. The Ta2O5 powder produced from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120 and flows along the chamber exhaust pipe 107 to be collected in the powder collection trap 140. In addition, the Ta2O5 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 reacts with excited fluorine atoms (F3) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130. * ) can react with and be vaporized to form TaF5.

[0058] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 uses nitrogen trifluoride (NF) supplied by the remote plasma source gas supplier 160. 3 ) is decomposed and excited fluorine atoms (F * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * The ) is supplied to the powder collection trap 140. In the powder collection trap 140, the Ta2O5 powder is excited by the fluorine atoms (F * ) reacts with and is gasified to form TaF5. In addition, the remote plasma reactor 150 decomposes the oxygen supplied by the remote plasma source gas supplier 160 to excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O) generated from the remote plasma reactor 150 * ) is supplied to the powder collection trap 140. In the powder collection trap 140, the unreacted Ta(OC2H5)5 contained in the exhaust gas is excited by the oxygen atoms (O * ) reacts with to produce Ta2O5 powder, which is collected in the powder collection trap 140.

[0059] Figure 2 shows a schematic block diagram of a semiconductor manufacturing facility equipped with a plasma exhaust gas treatment system according to a second embodiment of the present invention. Referring to Figure 2, the semiconductor manufacturing facility 200 includes a semiconductor manufacturing equipment 101 in which a semiconductor manufacturing process for manufacturing semiconductor elements is carried out, a gas purification equipment 103 for purifying the gas emitted from the semiconductor manufacturing equipment 101, an exhaust equipment 105 for emitting gas from the semiconductor manufacturing equipment 101 and flowing it into the gas purification equipment 103, and a plasma exhaust gas treatment system 210 according to a second embodiment of the present invention for treating the gas emitted from the semiconductor manufacturing equipment 101. The remaining configuration of the semiconductor manufacturing facility 200, excluding the plasma exhaust gas treatment system 210, is approximately the same as that of the semiconductor manufacturing facility 100 shown in Figure 1.

[0060] The exhaust gas treatment plasma equipment 210 includes an exhaust pipe plasma reactor 120 that generates a plasma reaction with respect to the exhaust gas discharged from the semiconductor process chamber 102, an exhaust pipe plasma source gas supplier 130 that supplies plasma source gas to the exhaust pipe plasma reactor 120, a cooler 240 provided on the chamber exhaust pipe 107, a remote plasma reactor 150 that generates reaction-active species supplied to the chamber exhaust pipe 107 using plasma, a remote plasma source gas supplier 160 that supplies gas to the remote plasma reactor 150, and the exhaust pipe plasma reactor 120 and the remote plasma reactor 15 The system comprises a shared power supply unit 170 that produces the power necessary for the operation of both units, a power distributor 180 that distributes the power produced by the shared power supply unit 170 and supplies it to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, a controller 190 that controls the operation of the power distributor 180, an exhaust pipe plasma impedance matching unit 195 that matches the impedance between the power distributor 180 and the exhaust pipe plasma reactor 120, and a remote plasma impedance matching unit 198 that matches the impedance between the power distributor 180 and the remote plasma reactor 150.

[0061] The cooler 240 is located on the chamber exhaust pipe 107 downstream of the exhaust pipe plasma reactor 120 to lower the temperature of the exhaust gas. The cooler 240 prevents damage to the equipment due to overheating. In this embodiment, the cooler 240 is described as being water-cooled using cooling water, but an air-cooled type may also be used, and this is also within the scope of the present invention.

[0062] The reactive species generated from the remote plasma reactor 150 are directly introduced from the chamber exhaust pipe 107 into the section between the exhaust pipe plasma reactor 120 and the cooler 240.

[0063] The remaining configuration of the exhaust gas treatment plasma equipment 210, except for the location where the reaction-active species generated from the cooler 240 and the remote plasma reactor 150 are supplied, is the same as that of the exhaust gas treatment plasma equipment 110 in the embodiment shown in Figure 1.

[0064] In the embodiment shown in Figure 2, the exhaust pipe plasma source gas supply unit 130 may be omitted, and this also falls within the scope of the present invention.

[0065] The operation of the exhaust gas treatment plasma equipment 210 through various processes performed in the process chamber 102 will be explained in detail below.

[0066] First, the operation of the exhaust gas treatment plasma equipment 210 when an SiO2 process is performed in the process chamber 102 using a process gas containing a Si-containing precursor will be explained as follows. In this embodiment, TEOS is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber 102, exhaust gas containing SiO2 powder, unreacted TEOS, and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0067] The operation in the exhaust pipe plasma reactor 120 is as follows: The SiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130, and fluorine atoms (F3) are generated. * It reacts with ) to form a gas, which then turns into SiF4.

[0068] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * The exhaust gas is supplied from the chamber exhaust pipe 107 to the section between the exhaust pipe plasma reactor 120 and the cooler 240. The SiO2 powder contained in the exhaust gas is supplied with excited fluorine atoms (F) generated from the remote plasma reactor 150. * It reacts with ) to form a gas, which then turns into SiF4.

[0069] Next, the operation of the exhaust gas treatment plasma equipment 210 when a TiO2 process is performed in the process chamber 102 using a process gas containing a Ti-containing precursor will be explained as follows. In this embodiment, Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber 102, exhaust gas containing TiO2 powder, unreacted Ti(OCH2CH3)4 and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0070] The operation in the exhaust pipe plasma reactor 120 is as follows: The TiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130, and fluorine atoms (F3) are generated. * It reacts with ) to form a gas, which then turns into TiF4.

[0071] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * The exhaust gas is supplied from the chamber exhaust pipe 107 to the section between the exhaust pipe plasma reactor 120 and the cooler 240. The TiO2 powder contained in the exhaust gas is supplied with excited fluorine atoms (F) generated from the remote plasma reactor 150. * It reacts with ) to form a gas that creates TiF4.

[0072] Next, the operation of the exhaust gas treatment plasma equipment 210 when a ZrO2 process is performed in the process chamber 102 using a process gas containing a Zr-containing precursor will be explained as follows. In this embodiment, (C5H5)Zr(N(CH3)2)3 is used as the Zr-containing precursor. After the ZrO2 process is performed in the process chamber 102, exhaust gas containing ZrO2 powder, unreacted (C5H5)Zr(N(CH3)2)3 and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0073] The operation in the exhaust pipe plasma reactor 120 is as follows: The ZrO2 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130, and the excited fluorine atoms (F3) are generated. * It reacts with ) to form a gas, which then turns into ZrF4.

[0074] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * The exhaust gas is supplied from the chamber exhaust pipe 107 to the section between the exhaust pipe plasma reactor 120 and the cooler 240. The ZrO2 powder contained in the exhaust gas is supplied with excited fluorine atoms (F) generated from the remote plasma reactor 150. * It reacts with ) to form a gas, which then turns into ZrF4.

[0075] Next, the operation of the exhaust gas treatment plasma equipment 210 when an HfO2 process is performed in the process chamber 102 using a process gas containing an Hf-containing precursor will be explained as follows. In this embodiment, (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber 102, exhaust gas containing HfO2 powder, unreacted (C5H5)Hf(N(CH3)2)3 and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0076] The operation in the exhaust pipe plasma reactor 120 is as follows: The HfO2 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130, and the excited fluorine atoms (F3) are generated. * It reacts with ) to form a gas that creates HfF4.

[0077] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * ) is supplied from the chamber exhaust pipe 107 to the section between the exhaust pipe plasma reactor 120 and the cooler 240. The HfO2 powder contained in the exhaust gas is supplied with excited fluorine atoms (F) generated from the remote plasma reactor 150. * It reacts with ) to form a gas that creates HfF4.

[0078] Next, the operation of the exhaust gas treatment plasma equipment 210 when an Nb2O5 process is performed in the process chamber 102 using a process gas containing an Nb-containing precursor will be explained as follows. In this embodiment, (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber 102, exhaust gas containing Nb2O5 powder, unreacted (C5H5)Nb(N(CH3)2)3 and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0079] The operation in the exhaust pipe plasma reactor 120 is as follows: The Nb2O5 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130, and the excited fluorine atoms (F3) are generated. * It reacts with ) to form a gas that creates NbF5.

[0080] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * The exhaust gas is supplied from the chamber exhaust pipe 107 to the section between the exhaust pipe plasma reactor 120 and the cooler 240. The Nb2O5 powder contained in the exhaust gas is supplied by excited fluorine atoms (F) generated from the remote plasma reactor 150. * It reacts with ) to form a gas that creates NbF5.

[0081] Next, the operation of the exhaust gas treatment plasma equipment 210 when a Ta2O5 process is performed in the process chamber 102 using a process gas containing a Ta-containing precursor will be explained as follows. In this embodiment, Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber 102, exhaust gas containing Ta2O5 powder, unreacted Ta(OC2H5)5, and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0082] The operation in the exhaust pipe plasma reactor 120 is as follows: Ta2O5 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130, and fluorine atoms (F3) are generated. * It reacts with ) and is vaporized to form TaF5.

[0083] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * The exhaust gas is supplied from the chamber exhaust pipe 107 to the section between the exhaust pipe plasma reactor 120 and the cooler 240. The Ta2O5 powder contained in the exhaust gas is supplied by excited fluorine atoms (F) generated from the remote plasma reactor 150. * ) reacts with and is vaporized to form TaF5.

[0084] Figure 3 shows a schematic block diagram of a semiconductor manufacturing facility equipped with a plasma exhaust gas treatment system according to the third embodiment of the present invention. Referring to Figure 3, the semiconductor manufacturing facility 300 includes a semiconductor manufacturing equipment 101 in which a semiconductor manufacturing process for manufacturing semiconductor elements is carried out, a gas purification equipment 103 for purifying the gas emitted from the semiconductor manufacturing equipment 101, an exhaust equipment 105 for emitting gas from the semiconductor manufacturing equipment 101 and flowing it into the gas purification equipment 103, and a plasma exhaust gas treatment system 310 according to the third embodiment of the present invention for treating the gas emitted from the semiconductor manufacturing equipment 101. The remaining configuration of the semiconductor manufacturing facility 300, excluding the plasma exhaust gas treatment system 310, is approximately the same as that of the semiconductor manufacturing facility 300 shown in Figure 2.

[0085] The exhaust gas treatment plasma equipment 310 includes an exhaust pipe plasma reactor 120 that generates a plasma reaction with respect to the exhaust gas discharged from the semiconductor process chamber 102, an exhaust pipe plasma source gas supplier 130 that supplies plasma source gas to the exhaust pipe plasma reactor 120, a remote plasma reactor 150 that generates reaction-active species supplied to the chamber exhaust pipe 107 using plasma, a remote plasma source gas supplier 160 that supplies gas to the remote plasma reactor 150, and the power required for the operation of both the exhaust pipe plasma reactor 120 and the remote plasma reactor 150. The exhaust gas pretreatment equipment 310 comprises a shared power supply unit 170 that produces power, a power distributor 180 that distributes the power produced from the shared power supply unit 170 and supplies it to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, a controller 190 that controls the operation of the power distributor 180, an exhaust pipe plasma impedance matching unit 195 that matches the impedance between the power distributor 180 and the exhaust pipe plasma reactor 120, and a remote plasma impedance matching unit 198 that matches the impedance between the power distributor 180 and the remote plasma reactor 150. The exhaust gas pretreatment equipment 310 is a configuration of the exhaust gas treatment plasma equipment 210 shown in Figure 2 with the cooler 248 removed, and since cooling is not required compared to the exhaust gas treatment plasma equipment 210 shown in Figure 2, the energy consumption efficiency in the operation of the exhaust gas treatment plasma equipment 310 is improved. The operation of the exhaust gas treatment plasma equipment 310 is approximately the same as the operation of the exhaust gas treatment plasma equipment 210 described in the embodiment of Figure 2. In the embodiment shown in Figure 3, the exhaust pipe plasma source gas supply unit 130 may be omitted, and this also falls within the scope of the present invention.

[0086] Figure 4 shows a schematic block diagram of a semiconductor manufacturing facility equipped with a plasma exhaust gas treatment system according to the fourth embodiment of the present invention. Referring to Figure 4, the semiconductor manufacturing facility 400 includes a semiconductor manufacturing equipment 101 in which a semiconductor manufacturing process for manufacturing semiconductor elements is carried out, a gas purification equipment 103 for purifying the gas emitted from the semiconductor manufacturing equipment 101, an exhaust equipment 105 for emitting gas from the semiconductor manufacturing equipment 101 and flowing it into the gas purification equipment 103, and a plasma exhaust gas treatment system 410 according to the fourth embodiment of the present invention for treating the gas emitted from the semiconductor manufacturing equipment 101. The remaining configuration of the semiconductor manufacturing facility 400, excluding the plasma exhaust gas treatment system 410, is approximately the same as that of the semiconductor manufacturing facility 100 shown in Figure 1.

[0087] The exhaust gas treatment plasma equipment 410 includes an exhaust pipe plasma reactor 120 that generates a plasma reaction with respect to the exhaust gas discharged from the semiconductor process chamber 102, an exhaust pipe plasma source gas supplier 130 that supplies plasma source gas to the exhaust pipe plasma reactor 120, a powder collection trap 140 installed on the chamber exhaust pipe 107 to collect powder, a remote plasma reactor 150 that generates reaction-active species supplied to the chamber exhaust pipe 107 using plasma, a remote plasma source gas supplier 160 that supplies gas to the remote plasma reactor 150, and the exhaust pipe plasma reactor 120 and the remote plasma The system includes a shared power supply unit 170 that produces the power necessary for the operation of all of the plasma reactors 150, a power distributor 180 that distributes the power produced from the shared power supply unit 170 and supplies it to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, a controller 190 that controls the operation of the power distributor 180, an exhaust pipe plasma impedance matching unit 195 that matches the impedance between the power distributor 180 and the exhaust pipe plasma reactor 120, and a remote plasma impedance matching unit 198 that matches the impedance between the power distributor 180 and the remote plasma reactor 150.

[0088] The reaction-active species generated from the remote plasma reactor 150 are directly introduced from the chamber exhaust pipe 107 into the section between the powder collection trap 140 and the vacuum pump 106.

[0089] The remaining configuration of the exhaust gas treatment plasma equipment 410, except for the location where the reaction-active species generated from the remote plasma reactor 150 are supplied, is the same as that of the exhaust gas treatment plasma equipment 110 in the embodiment shown in Figure 1.

[0090] In the embodiment shown in Figure 4, the exhaust pipe plasma source gas supply unit 130 may be omitted, and this also falls within the scope of the present invention.

[0091] The operation of the plasma equipment 410 for exhaust gas treatment, performed in various processes in the process chamber 102, will be explained in detail below.

[0092] First, the operation of the exhaust gas treatment plasma equipment 410 when an SiO2 process is performed in the process chamber 102 using a process gas containing a Si-containing precursor will be explained as follows. In this embodiment, TEOS is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber 102, exhaust gas containing SiO2 powder, unreacted TEOS, and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0093] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted TEOS contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited by oxygen atoms (O) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. *) reacts with to produce SiO2, a stabilized powder. The SiO2 powder produced from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120 and flows along the chamber exhaust pipe 107 to be collected in the powder collection trap 140. In addition, the SiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 reacts with excited fluorine atoms (F3) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130. * ) can react with and be vaporized to form SiF4.

[0094] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * The SiO2 powder is supplied from the chamber exhaust pipe 107 to the section between the powder collection trap 140 and the vacuum pump 106. The SiO2 powder contained in the exhaust gas discharged from the powder collection trap 140 is supplied with excited fluorine atoms (F) generated from the remote plasma reactor 150. * It reacts with ) to form a gas, which then turns into SiF4.

[0095] Next, the operation of the exhaust gas treatment plasma equipment 410 when a TiO2 process is performed in the process chamber 102 using a process gas containing a Ti-containing precursor will be explained as follows. In this embodiment, Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber 102, exhaust gas containing TiO2 powder, unreacted Ti(OCH2CH3)4 and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0096] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited by oxygen atoms (O) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. * ) reacts with to produce TiO2, a stabilized powder. The TiO2 powder produced from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120 and flows along the chamber exhaust pipe 107 to be collected in the powder collection trap 140. In addition, the TiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 reacts with excited fluorine atoms (F3) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130. * ) can react with other substances to form a gas that can then be vaporized to create TiF4.

[0097] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. *) is supplied from the chamber exhaust pipe 107 to a section between the powder collection trap 140 and the vacuum pump 106. TiO₂ powder contained in the exhaust gas discharged from the powder collection trap 140 is excited fluorine atoms (F * ) generated and supplied from the remote plasma reactor 150, reacts with them to be gasified and form TiF₄.

[0098] Next, when a ZrO₂ process using a process gas containing a Zr-containing precursor is performed in the process chamber 102, the operation of the exhaust gas treatment plasma equipment 410 will be described as follows. In this embodiment, it is described that (C₅H₅)Zr(N(CH₃)₂)₃ is used as the Zr-containing precursor. After the ZrO₂ process is performed in the process chamber 102, exhaust gas containing ZrO₂ powder, unreacted (C₅H₅)Zr(N(CH₃)₂)₃ and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is discharged from the semiconductor process chamber 102, high-frequency AC power generated from the shared power supply device 170 by the power distributor 180 controlled by the controller 190 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 respectively, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0099] The operation of the exhaust pipe plasma reactor 120 is as follows. Unreacted (C₅H₅)Zr(N(CH₃)₂)₃ contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited oxygen atoms (O * ) generated by oxygen supplied from the exhaust pipe plasma source gas supplier 130, reacts with them to generate ZrO₂ which is stabilized powder. The ZrO₂ powder generated from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120, flows along the chamber exhaust pipe 107, and is collected in the powder collection trap 140. Furthermore, ZrO₂ powder contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited fluorine atoms (F *) can react with and be vaporized to form ZrF4.

[0100] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * The exhaust gas discharged from the chamber exhaust pipe 107 is supplied to the section between the powder collection trap 140 and the vacuum pump 106. The ZrO2 powder contained in the exhaust gas discharged from the powder collection trap 140 is supplied with excited fluorine atoms (F) generated from the remote plasma reactor 150. * It reacts with ) to form a gas, which then turns into ZrF4.

[0101] Next, the operation of the exhaust gas treatment plasma equipment 410 when an HfO2 process is performed in the process chamber 102 using a process gas containing an Hf-containing precursor will be explained as follows. In this embodiment, (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber 102, exhaust gas containing HfO2 powder, unreacted (C5H5)Hf(N(CH3)2)3 and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0102] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber 102 is reacted with excited oxygen atoms (O) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. *) reacts to produce stabilized HfO2 powder. The HfO2 powder generated from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120, flows along the chamber exhaust pipe 107, and is collected in the powder collection trap 140. In addition, the HfO2 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited fluorine atoms (F * ) generated by nitrogen trifluoride (NF3) supplied from the exhaust pipe plasma source gas supplier 130, and can react therewith to be gasified to form HfF4.

[0103] The operation in the remote plasma reactor 150 is as follows. The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied from a remote plasma source gas supplier 160 to generate excited fluorine atoms (F * ). The excited fluorine atoms (F * ) generated from the remote plasma reactor 150 are supplied from the chamber exhaust pipe 107 to the section between the powder collection trap 140 and the vacuum pump 106. The HfO2 powder contained in the exhaust gas discharged from the powder collection trap 140 reacts with the excited fluorine atoms (F * ) generated and supplied from the remote plasma reactor 150, and is gasified to form HfF4.

[0104] Next, the operation of the exhaust gas treatment plasma equipment 410 when an Nb2O5 process is performed in the process chamber 102 using a process gas containing an Nb-containing precursor will be explained as follows. In this embodiment, (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber 102, exhaust gas containing Nb2O5 powder, unreacted (C5H5)Nb(N(CH3)2)3 and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0105] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber 102 is reacted with excited oxygen atoms (O) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. * ) reacts with to produce Nb2O5, a stabilized powder. The Nb2O5 powder produced from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120 and flows along the chamber exhaust pipe 107 to be collected in the powder collection trap 140. In addition, the Nb2O5 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 reacts with excited fluorine atoms (F) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130. * ) can react with and be vaporized to form NbF5.

[0106] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150.* The exhaust gas is supplied from the chamber exhaust pipe 107 to the section between the powder collection trap 140 and the vacuum pump 106. The Nb2O5 powder contained in the exhaust gas discharged from the powder collection trap 140 is supplied with excited fluorine atoms (F) generated from the remote plasma reactor 150. * It reacts with ) to form a gas that creates NbF5.

[0107] Next, the operation of the exhaust gas treatment plasma equipment 410 when a Ta2O5 process is performed in the process chamber 102 using a process gas containing a Ta-containing precursor will be explained as follows. In this embodiment, Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber 102, exhaust gas containing Ta2O5 powder, unreacted Ta(OC2H5)5, and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0108] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber 102 is reacted with excited oxygen atoms (O2H5) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. * ) reacts with to produce Ta2O5, a stabilized powder. The Ta2O5 powder produced from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120 and flows along the chamber exhaust pipe 107 to be collected in the powder collection trap 140. In addition, the Ta2O5 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 reacts with excited fluorine atoms (F3) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130. * ) can react with and be vaporized to form TaF5.

[0109] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * The exhaust gas is supplied from the chamber exhaust pipe 107 to the section between the powder collection trap 140 and the vacuum pump 106. The Ta2O5 powder contained in the exhaust gas discharged from the powder collection trap 140 is supplied with excited fluorine atoms (F) generated from the remote plasma reactor 150. * ) reacts with and is vaporized to form TaF5.

[0110] Figure 5 shows a schematic block diagram of a semiconductor manufacturing facility equipped with a plasma exhaust gas treatment system according to the fifth embodiment of the present invention. Referring to Figure 5, the semiconductor manufacturing facility 500 includes a semiconductor manufacturing equipment 101 on which semiconductor manufacturing processes for manufacturing semiconductor elements are carried out, a gas purification equipment 103 for purifying the gas emitted from the semiconductor manufacturing equipment 101, an exhaust equipment 105 for emitting gas from the semiconductor manufacturing equipment 101 and allowing it to flow into the gas purification equipment 103, and a plasma exhaust gas treatment system 510 according to the fifth embodiment of the present invention for treating the gas emitted from the semiconductor manufacturing equipment 101. The remaining configuration of the semiconductor manufacturing facility 500, excluding the plasma exhaust gas treatment system 510, is approximately the same as that of the semiconductor manufacturing facility 100 shown in Figure 1.

[0111] The exhaust gas treatment plasma equipment 510 includes an exhaust pipe plasma reactor 120 that generates a plasma reaction with respect to the exhaust gas discharged from the semiconductor process chamber 102, an exhaust pipe plasma source gas supplier 130 that supplies plasma source gas to the exhaust pipe plasma reactor 120, a powder collection trap 140 installed on the chamber exhaust pipe 107 to collect powder, a remote plasma reactor 150 that generates reaction-active species supplied to the chamber exhaust pipe 107 using plasma, a remote plasma source gas supplier 160 that supplies gas to the remote plasma reactor 150, and the exhaust pipe plasma reactor 120 and the remote plasma... The system includes a shared power supply unit 170 that produces the power necessary for the operation of all of the plasma reactors 150, a power distributor 180 that distributes the power produced from the shared power supply unit 170 and supplies it to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, a controller 190 that controls the operation of the power distributor 180, an exhaust pipe plasma impedance matching unit 195 that matches the impedance between the power distributor 180 and the exhaust pipe plasma reactor 120, and a remote plasma impedance matching unit 198 that matches the impedance between the power distributor 180 and the remote plasma reactor 150.

[0112] The reactive species generated from the remote plasma reactor 150 are directly introduced from the chamber exhaust pipe 107 to the upstream side of the exhaust pipe plasma reactor 120.

[0113] The remaining configuration of the exhaust gas treatment plasma equipment 510, except for the location where the reaction-active species generated from the remote plasma reactor 150 are supplied, is the same as that of the exhaust gas treatment plasma equipment 110 in the embodiment shown in Figure 1.

[0114] In the embodiment shown in Figure 5, the exhaust pipe plasma source gas supply unit 130 may be omitted, and this also falls within the scope of the present invention.

[0115] The operation of the exhaust gas treatment plasma equipment 110 through various processes performed in the process chamber 102 will be explained in detail below.

[0116] First, the operation of the exhaust gas treatment plasma equipment 510 when an SiO2 process is performed in the process chamber 102 using a process gas containing a Si-containing precursor will be explained as follows. In this embodiment, TEOS is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber 102, exhaust gas containing SiO2 powder, unreacted TEOS, and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0117] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted TEOS contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited by oxygen atoms (O) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. * ) reacts with to produce SiO2, a stabilized powder. The SiO2 powder produced from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120 and flows along the chamber exhaust pipe 107 to be collected in the powder collection trap 140. In addition, the SiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 reacts with excited fluorine atoms (F3) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130. * ) can react with and be vaporized to form SiF4.

[0118] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. *) is supplied from the chamber exhaust pipe 107 to the upstream side of the exhaust pipe plasma reactor 120. The SiO2 powder contained in the exhaust gas flowing into the exhaust pipe plasma reactor 120 is supplied with excited fluorine atoms (F) generated from the remote plasma reactor 150. * ) reacts with and is gasified to form SiF4. In addition, the remote plasma reactor 150 decomposes the oxygen supplied by the remote plasma source gas supplier 160 to excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O) generated from the remote plasma reactor 150 * ) is supplied from the chamber exhaust pipe 107 to the upstream side of the exhaust pipe plasma reactor 120. Unreacted TEOS contained in the exhaust gas flowing into the exhaust pipe plasma reactor 120 is excited by oxygen atoms (O * ) reacts with to produce SiO2 powder, which is collected in the powder collection trap 140.

[0119] Next, the operation of the exhaust gas treatment plasma equipment 510 when a TiO2 process is performed in the process chamber 102 using a process gas containing a Ti-containing precursor will be explained as follows. In this embodiment, Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber 102, exhaust gas containing TiO2 powder, unreacted Ti(OCH2CH3)4 and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0120] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber 102 is excited by oxygen atoms (O) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. *) reacts with to produce TiO2, a stabilized powder. The TiO2 powder produced from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120 and flows along the chamber exhaust pipe 107 to be collected in the powder collection trap 140. In addition, the TiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 reacts with excited fluorine atoms (F3) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130. * ) can react with other substances to form a gas that can then be vaporized to create TiF4.

[0121] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * The TiO2 powder contained in the exhaust gas flowing into the exhaust pipe plasma reactor 120 is supplied from the chamber exhaust pipe 107 to the upstream side of the exhaust pipe plasma reactor 120. * ) reacts with and is gasified to form TiF4. In addition, the remote plasma reactor 150 decomposes the oxygen supplied by the remote plasma source gas supplier 160 to excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O) generated from the remote plasma reactor 150 * ) is supplied from the chamber exhaust pipe 107 to the upstream side of the exhaust pipe plasma reactor 120. Unreacted Ti(OCH2CH3)4 contained in the exhaust gas flowing into the exhaust pipe plasma reactor 120 is excited by oxygen atoms (O * It reacts with ) to produce TiO2 powder, which is collected in the powder collection trap 140.

[0122] Next, the operation of the exhaust gas treatment plasma equipment 510 when a ZrO2 process is performed in the process chamber 102 using a process gas containing a Zr-containing precursor will be explained as follows. In this embodiment, (C5H5)Zr(N(CH3)2)3 is used as the Zr-containing precursor. After the ZrO2 process is performed in the process chamber 102, exhaust gas containing ZrO2 powder, unreacted (C5H5)Zr(N(CH3)2)3 and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0123] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber 102 is reacted with excited oxygen atoms (O) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. * ) reacts with to produce ZrO2, a stabilized powder. The ZrO2 powder produced from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120 and flows along the chamber exhaust pipe 107 to be collected in the powder collection trap 140. In addition, the ZrO2 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 reacts with excited fluorine atoms (F3) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130. * ) can react with and be vaporized to form ZrF4.

[0124] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. *) is supplied from the chamber exhaust pipe 107 to the upstream side of the exhaust pipe plasma reactor 120. The ZrO2 powder contained in the exhaust gas flowing into the exhaust pipe plasma reactor 120 is supplied with excited fluorine atoms (F) generated from the remote plasma reactor 150. * It reacts with (O) and is gasified to form ZrF4. In addition, the remote plasma reactor 150 decomposes the oxygen supplied by the remote plasma source gas supplier 160 and excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O) generated from the remote plasma reactor 150 * ) is supplied from the chamber exhaust pipe 107 to the upstream side of the exhaust pipe plasma reactor 120. Unreacted (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas flowing into the exhaust pipe plasma reactor 120 is excited by oxygen atoms (O * It reacts with ) to produce ZrO2 powder, which is collected in the powder collection trap 140.

[0125] Next, the operation of the exhaust gas treatment plasma equipment 510 when an HfO2 process is performed in the process chamber 102 using a process gas containing an Hf-containing precursor will be explained as follows. In this embodiment, (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber 102, exhaust gas containing HfO2 powder, unreacted (C5H5)Hf(N(CH3)2)3 and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0126] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber 102 is reacted with excited oxygen atoms (O) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. * ) reacts with to produce a stabilized powder called HfO2. The HfO2 powder produced from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120 and flows along the chamber exhaust pipe 107 to be collected in the powder collection trap 140. In addition, the HfO2 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 reacts with excited fluorine atoms (F3) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130. * ) can react with other substances to form a gas that can then be converted into HfF4.

[0127] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * ) is supplied from the chamber exhaust pipe 107 to the upstream side of the exhaust pipe plasma reactor 120. The HfO2 powder contained in the exhaust gas flowing into the exhaust pipe plasma reactor 120 is supplied with excited fluorine atoms (F) generated from the remote plasma reactor 150. * ) reacts with and is gasified to form HfF4. In addition, the remote plasma reactor 150 decomposes the oxygen supplied by the remote plasma source gas supplier 160 and excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O) generated from the remote plasma reactor 150 * ) is supplied from the chamber exhaust pipe 107 to the upstream side of the exhaust pipe plasma reactor 120. Unreacted (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas flowing into the exhaust pipe plasma reactor 120 is excited by oxygen atoms (O *It reacts with ) to produce HfO2 powder, which is collected in the powder collection trap 140.

[0128] Next, the operation of the exhaust gas treatment plasma equipment 510 when an Nb2O5 process is performed in the process chamber 102 using a process gas containing an Nb-containing precursor will be explained as follows. In this embodiment, (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber 102, exhaust gas containing Nb2O5 powder, unreacted (C5H5)Nb(N(CH3)2)3 and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0129] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber 102 is reacted with excited oxygen atoms (O) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. * ) reacts with to produce Nb2O5, a stabilized powder. The Nb2O5 powder produced from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120 and flows along the chamber exhaust pipe 107 to be collected in the powder collection trap 140. In addition, the Nb2O5 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 reacts with excited fluorine atoms (F) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130. * ) can react with and be vaporized to form NbF5.

[0130] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * ) is supplied from the chamber exhaust pipe 107 to the upstream side of the exhaust pipe plasma reactor 120. The Nb2O5 powder contained in the exhaust gas flowing into the exhaust pipe plasma reactor 120 is supplied with excited fluorine atoms (F) generated from the remote plasma reactor 150. * It reacts with (O) and is gasified to form NbF5. In addition, the remote plasma reactor 150 decomposes the oxygen supplied by the remote plasma source gas supplier 160 and excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O) generated from the remote plasma reactor 150 * ) is supplied from the chamber exhaust pipe 107 to the upstream side of the exhaust pipe plasma reactor 120. Unreacted (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas flowing into the exhaust pipe plasma reactor 120 is excited by oxygen atoms (O * It reacts with ) to produce Nb2O5 powder, which is collected in the powder collection trap 140.

[0131] Next, the operation of the exhaust gas treatment plasma equipment 510 when a Ta2O5 process is performed in the process chamber 102 using a process gas containing a Ta-containing precursor will be explained as follows. In this embodiment, Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber 102, exhaust gas containing Ta2O5 powder, unreacted Ta(OC2H5)5, and oxygen is discharged from the semiconductor process chamber 102 by the operation of the vacuum pump 106. While the exhaust gas is being discharged from the semiconductor process chamber 102, high-frequency AC power produced from the shared power supply unit 170 is distributed and supplied to the exhaust pipe plasma reactor 120 and the remote plasma reactor 150, respectively, by the power distributor 180 controlled by the controller 190, so that the exhaust pipe plasma reactor 120 and the remote plasma reactor 150 operate simultaneously.

[0132] The operation in the exhaust pipe plasma reactor 120 is as follows: Unreacted Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber 102 is reacted with excited oxygen atoms (O2H5) generated by the oxygen supplied by the exhaust pipe plasma source gas supplier 130. * ) reacts with to produce Ta2O5, a stabilized powder. The Ta2O5 powder produced from the exhaust pipe plasma reactor 120 is discharged from the exhaust pipe plasma reactor 120 and flows along the chamber exhaust pipe 107 to be collected in the powder collection trap 140. In addition, the Ta2O5 powder contained in the exhaust gas discharged from the semiconductor process chamber 102 reacts with excited fluorine atoms (F3) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier 130. * ) can react with and be vaporized to form TaF5.

[0133] The operation of the remote plasma reactor 150 is as follows: The remote plasma reactor 150 decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier 160 to excite fluorine atoms (F3). * Excited fluorine atoms (F) generated from the remote plasma reactor 150. * The Ta2O5 powder contained in the exhaust gas flowing into the exhaust pipe plasma reactor 120 is supplied from the chamber exhaust pipe 107 to the upstream side of the exhaust pipe plasma reactor 120. * ) reacts with and is gasified to form TaF5. In addition, the remote plasma reactor 150 decomposes the oxygen supplied by the remote plasma source gas supplier 160 to excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O) generated from the remote plasma reactor 150 * ) is supplied from the chamber exhaust pipe 107 to the upstream side of the exhaust pipe plasma reactor 120. Unreacted Ta(OC2H5)5 contained in the exhaust gas flowing into the exhaust pipe plasma reactor 120 is excited by oxygen atoms (O *) reacts with to produce Ta2O5 powder, which is collected in the powder collection trap 140.

[0134] Although the present invention has been described above through embodiments, the present invention is not limited thereto. The above embodiments can be modified or altered without departing from the spirit and scope of the present invention, and those skilled in the art will understand that such modifications and alterations also belong to the present invention.

Claims

1. Equipment for processing exhaust gas discharged from a semiconductor process chamber, where a semiconductor manufacturing process using process gas is carried out, through a chamber exhaust pipe connecting the semiconductor process chamber and the vacuum pump by a vacuum pump, An exhaust pipe plasma reactor is provided on the chamber exhaust pipe and generates plasma in the exhaust gas to remove components to be removed contained in the exhaust gas, A remote plasma reactor that generates plasma to decompose a remote plasma source gas and produce a remote plasma containing remote reaction-active species, A shared power supply unit that simultaneously produces the AC power necessary for the operation of the exhaust pipe plasma reactor and the remote plasma reactor, Includes a power distributor that distributes AC power produced from the shared power supply unit and supplies it simultaneously to the exhaust pipe plasma reactor and the remote plasma reactor, The remote plasma is supplied between the semiconductor process chamber and the vacuum pump on the exhaust gas flow line. Plasma equipment for exhaust gas treatment of semiconductor manufacturing facilities, wherein one of the exhaust pipe plasma reactor and the remote plasma reactor is an inductively coupled plasma reactor, and the other is a capacitively coupled plasma reactor.

2. Plasma equipment for exhaust gas treatment of semiconductor manufacturing equipment according to claim 1, wherein the exhaust pipe plasma reactor is an inductively coupled plasma (ICP) reactor, and the remote plasma reactor is a capacitively coupled plasma (CCP) reactor.

3. Plasma equipment for exhaust gas treatment of semiconductor manufacturing equipment according to claim 1, further comprising: an exhaust pipe plasma impedance matching unit for matching impedance between the power distributor and the exhaust pipe plasma reactor; and a remote plasma impedance matching unit for matching impedance between the power distributor and the remote plasma reactor.

4. Plasma equipment for exhaust gas treatment of semiconductor manufacturing equipment according to claim 1, further comprising a controller that controls the operation of the power distributor and adjusts the ratio of the power supplied to the exhaust pipe plasma reactor and the power supplied to the remote plasma reactor using AC power produced by the shared power supply device.

5. The system further includes a powder collection trap provided on the chamber exhaust pipe between the exhaust pipe plasma reactor and the vacuum pump to collect powder contained in the exhaust gas, Plasma equipment for exhaust gas treatment of semiconductor manufacturing equipment according to claim 1, wherein the remote plasma is supplied to the powder collection trap.

6. The system further includes a powder collection trap provided on the chamber exhaust pipe between the exhaust pipe plasma reactor and the vacuum pump to collect powder contained in the exhaust gas, Plasma equipment for exhaust gas treatment of semiconductor manufacturing equipment according to claim 1, wherein the remote plasma is supplied from the chamber exhaust pipe to the upstream side of the exhaust pipe plasma reactor.

7. The remote plasma contains excited oxygen atoms (O ＊ ) including, The unreacted precursor contained in the exhaust gas is excited oxygen atoms (O) contained in the remote plasma. ＊ ) reacts with to form a powder component, The unreacted precursor and the excited oxygen atom (O ＊ The plasma equipment for exhaust gas treatment of semiconductor manufacturing equipment according to claim 5 or 6, wherein the powder component formed by the reaction of ) is collected in the powder collection trap.

8. The system further includes an exhaust pipe plasma source gas supplier that supplies exhaust pipe plasma source gas to the exhaust pipe plasma reactor, The exhaust pipe plasma reactor decomposes the exhaust pipe plasma source gas to excite oxygen atoms (O ＊ ) generates, The unreacted precursor contained in the exhaust gas is excited oxygen atoms (O) generated from the exhaust pipe plasma reactor. ＊ ) reacts with to form a powder component, The unreacted precursor and the excited oxygen atom (O ＊ The plasma equipment for exhaust gas treatment of semiconductor manufacturing equipment according to claim 5 or 6, wherein the powder component formed by the reaction of ) is collected in the powder collection trap.

9. The plasma equipment for exhaust gas treatment of semiconductor manufacturing equipment according to claim 7 or 8, wherein the unreacted precursor is a Si-containing precursor, a Ti-containing precursor, a Zr-containing precursor, an Hf-containing precursor, an Nb-containing precursor, or a Ta-containing precursor.

10. The system further includes a powder collection trap provided on the chamber exhaust pipe between the exhaust pipe plasma reactor and the vacuum pump to collect powder contained in the exhaust gas, Plasma equipment for exhaust gas treatment of semiconductor manufacturing equipment according to claim 1, wherein the remote plasma is supplied from the chamber exhaust pipe between the powder collection trap and the vacuum pump.

11. The system further includes a cooler provided on the chamber exhaust pipe between the exhaust pipe plasma reactor and the vacuum pump to lower the temperature of the exhaust gas, Plasma equipment for exhaust gas treatment of semiconductor manufacturing equipment according to claim 1, wherein the remote plasma is supplied from the chamber exhaust pipe between the exhaust pipe plasma reactor and the cooler.

12. Plasma equipment for exhaust gas treatment of semiconductor manufacturing equipment according to claim 1, wherein the remote plasma is supplied from above the chamber exhaust pipe between the exhaust pipe plasma reactor and the vacuum pump.

13. The remote plasma contains excited fluorine atoms (F ＊ ) including, The powder component contained in the exhaust gas is excited fluorine atoms (F) contained in the remote plasma. ＊ Plasma equipment for treating exhaust gas of semiconductor manufacturing equipment according to claim 1, which reacts with and gasifies the gas.

14. The system further includes an exhaust pipe plasma source gas supplier that supplies exhaust pipe plasma source gas to the exhaust pipe plasma reactor, The exhaust pipe plasma reactor decomposes the exhaust pipe plasma source gas to generate excited fluorine atoms (F ＊ ), The powder component contained in the exhaust gas is excited fluorine atoms (F) generated from the exhaust pipe plasma reactor. ＊ Plasma equipment for treating exhaust gas of semiconductor manufacturing equipment according to claim 1, which reacts with and gasifies the gas.

15. The aforementioned powder component is SiO ２ Powder, TiO ２ Powder, ZrO ２ powder, HfO ２ Powder, Nb ２ O ５ powder or Ta ２ O ５ Plasma equipment for exhaust gas treatment of semiconductor manufacturing equipment according to claim 13 or 14, wherein the material is a powder.

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